AU7685198A - A controlled cleavage process - Google Patents

A controlled cleavage process

Info

Publication number
AU7685198A
AU7685198A AU76851/98A AU7685198A AU7685198A AU 7685198 A AU7685198 A AU 7685198A AU 76851/98 A AU76851/98 A AU 76851/98A AU 7685198 A AU7685198 A AU 7685198A AU 7685198 A AU7685198 A AU 7685198A
Authority
AU
Australia
Prior art keywords
cleavage process
controlled cleavage
controlled
cleavage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU76851/98A
Inventor
Nathan W. Cheung
Francois J. Henley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Genesis Corp
Original Assignee
Silicon Genesis Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/026,027 external-priority patent/US5994207A/en
Application filed by Silicon Genesis Corp filed Critical Silicon Genesis Corp
Publication of AU7685198A publication Critical patent/AU7685198A/en
Abandoned legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B26HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26DCUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D3/00Cutting work characterised by the nature of the cut made; Apparatus therefor
    • B26D3/28Splitting layers from work; Mutually separating layers by cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B26HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26FPERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F3/00Severing by means other than cutting; Apparatus therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B26HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26FPERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F3/00Severing by means other than cutting; Apparatus therefor
    • B26F3/002Precutting and tensioning or breaking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
AU76851/98A 1997-05-12 1998-05-11 A controlled cleavage process Abandoned AU7685198A (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US4627697P 1997-05-12 1997-05-12
US60046276 1997-05-12
US09/026,027 US5994207A (en) 1997-05-12 1998-02-19 Controlled cleavage process using pressurized fluid
US09026115 1998-02-19
US09/026,115 US6155909A (en) 1997-05-12 1998-02-19 Controlled cleavage system using pressurized fluid
US09026027 1998-02-19
PCT/US1998/009567 WO1998052216A1 (en) 1997-05-12 1998-05-11 A controlled cleavage process

Publications (1)

Publication Number Publication Date
AU7685198A true AU7685198A (en) 1998-12-08

Family

ID=27362676

Family Applications (1)

Application Number Title Priority Date Filing Date
AU76851/98A Abandoned AU7685198A (en) 1997-05-12 1998-05-11 A controlled cleavage process

Country Status (6)

Country Link
EP (1) EP0995227A4 (en)
JP (1) JP2001525991A (en)
CN (1) CN1146973C (en)
AU (1) AU7685198A (en)
CA (1) CA2290104A1 (en)
WO (1) WO1998052216A1 (en)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG70141A1 (en) 1997-12-26 2000-01-25 Canon Kk Sample separating apparatus and method and substrate manufacturing method
US6383890B2 (en) 1997-12-26 2002-05-07 Canon Kabushiki Kaisha Wafer bonding method, apparatus and vacuum chuck
US6540861B2 (en) * 1998-04-01 2003-04-01 Canon Kabushiki Kaisha Member separating apparatus and processing apparatus
JP2000349264A (en) * 1998-12-04 2000-12-15 Canon Inc Method for manufacturing, use and utilizing method of semiconductor wafer
JP4365920B2 (en) * 1999-02-02 2009-11-18 キヤノン株式会社 Separation method and semiconductor substrate manufacturing method
EP1039513A3 (en) * 1999-03-26 2008-11-26 Canon Kabushiki Kaisha Method of producing a SOI wafer
FR2795865B1 (en) * 1999-06-30 2001-08-17 Commissariat Energie Atomique METHOD FOR MAKING A THIN FILM USING PRESSURIZATION
FR2796491B1 (en) 1999-07-12 2001-08-31 Commissariat Energie Atomique METHOD FOR TAKING OFF TWO ELEMENTS AND DEVICE FOR IMPLEMENTING SAME
FR2797347B1 (en) * 1999-08-04 2001-11-23 Commissariat Energie Atomique METHOD FOR TRANSFERRING A THIN FILM HAVING A SURFRAGILILIZATION STEP
AU6905000A (en) * 1999-08-10 2001-03-05 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US6653209B1 (en) 1999-09-30 2003-11-25 Canon Kabushiki Kaisha Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
FR2809867B1 (en) * 2000-05-30 2003-10-24 Commissariat Energie Atomique FRAGILE SUBSTRATE AND METHOD FOR MANUFACTURING SUCH SUBSTRATE
FR2811807B1 (en) * 2000-07-12 2003-07-04 Commissariat Energie Atomique METHOD OF CUTTING A BLOCK OF MATERIAL AND FORMING A THIN FILM
JP2002075917A (en) 2000-08-25 2002-03-15 Canon Inc Device and method for separating sample
FR2817395B1 (en) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator METHOD FOR MANUFACTURING A SUBSTRATE, IN PARTICULAR FOR OPTICS, ELECTRONICS OR OPTOELECTRONICS AND SUBSTRATE OBTAINED THEREBY
FR2818010B1 (en) 2000-12-08 2003-09-05 Commissariat Energie Atomique METHOD OF MAKING A THIN LAYER INVOLVING THE INTRODUCTION OF GAS SPECIES
FR2819099B1 (en) * 2000-12-28 2003-09-26 Commissariat Energie Atomique METHOD FOR PRODUCING A STACKED STRUCTURE
JP4803884B2 (en) * 2001-01-31 2011-10-26 キヤノン株式会社 Method for manufacturing thin film semiconductor device
JP2002305293A (en) 2001-04-06 2002-10-18 Canon Inc Method of manufacturing semiconductor member, and method of manufacturing semiconductor device
US6770966B2 (en) * 2001-07-31 2004-08-03 Intel Corporation Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat
US7351300B2 (en) 2001-08-22 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
FR2834380B1 (en) * 2002-01-03 2005-02-18 Soitec Silicon On Insulator DEVICE FOR CUTTING LAYER OF SUBSTRATE, AND ASSOCIATED METHOD
FR2847714B1 (en) * 2002-11-27 2005-02-18 Soitec Silicon On Insulator SEMICONDUCTOR WAFER RECOVERY METHOD AND DEVICE
EP1427002B1 (en) * 2002-12-06 2017-04-12 Soitec A method for recycling a substrate using local cutting
TWI233154B (en) 2002-12-06 2005-05-21 Soitec Silicon On Insulator Method for recycling a substrate
JP4151421B2 (en) * 2003-01-23 2008-09-17 セイコーエプソン株式会社 Device manufacturing method
JP2005039114A (en) * 2003-07-17 2005-02-10 Disco Abrasive Syst Ltd Semiconductor wafer shifting device
EP1730737B1 (en) * 2004-03-22 2013-01-16 Singulus Technologies AG Method and apparatus for separating disc-shaped substrates
DE102004041378B4 (en) 2004-08-26 2010-07-08 Siltronic Ag Semiconductor wafer with a layered structure with low warp and bow and process for its production
DE102005000826A1 (en) 2005-01-05 2006-07-20 Siltronic Ag Semiconductor wafer with silicon-germanium layer and method for its production
EP1894234B1 (en) 2005-02-28 2021-11-03 Silicon Genesis Corporation Substrate stiffening method and system for a layer transfer.
JP5064692B2 (en) * 2006-02-09 2012-10-31 信越化学工業株式会社 Manufacturing method of SOI substrate
JP5064693B2 (en) * 2006-02-13 2012-10-31 信越化学工業株式会社 Manufacturing method of SOI substrate
US8293619B2 (en) * 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
JP2008112847A (en) * 2006-10-30 2008-05-15 Shin Etsu Chem Co Ltd Process for manufacturing single crystal silicon solar cell and single crystal silicon solar cell
JP5284576B2 (en) * 2006-11-10 2013-09-11 信越化学工業株式会社 Manufacturing method of semiconductor substrate
JP5166745B2 (en) * 2007-03-07 2013-03-21 信越化学工業株式会社 Method for producing single crystal silicon solar cell
US20100193900A1 (en) * 2007-07-13 2010-08-05 National University Corporation Tohoku University Soi substrate and semiconductor device using an soi substrate
JP2010021398A (en) * 2008-07-11 2010-01-28 Disco Abrasive Syst Ltd Method of treating wafer
US7994064B2 (en) * 2009-06-15 2011-08-09 Twin Creeks Technologies, Inc. Selective etch for damage at exfoliated surface
WO2013058222A1 (en) * 2011-10-18 2013-04-25 富士電機株式会社 Solid-phase bonded wafer support substrate detachment method and semiconductor device fabrication method
FR2995447B1 (en) * 2012-09-07 2014-09-05 Soitec Silicon On Insulator METHOD FOR SEPARATING AT LEAST TWO SUBSTRATES ACCORDING TO A CHOSEN INTERFACE
JP2014138189A (en) * 2013-01-16 2014-07-28 Silicon Genesis Corp Controlled process and resulting device
CN103077885B (en) * 2013-01-31 2016-06-01 上海新傲科技股份有限公司 Controlled thining method and semiconducter substrate
JP6213046B2 (en) * 2013-08-21 2017-10-18 信越半導体株式会社 Manufacturing method of bonded wafer
FR3032555B1 (en) * 2015-02-10 2018-01-19 Soitec METHOD FOR DEFERRING A USEFUL LAYER
CN104979262B (en) * 2015-05-14 2020-09-22 浙江中纳晶微电子科技有限公司 Wafer separation method
CN106529159A (en) * 2016-10-28 2017-03-22 山东理工大学 Calculation method for natural angular frequency of transverse vibration of nanometer chord of piezoelectrically-controlled single atomic chain

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466852A (en) * 1983-10-27 1984-08-21 At&T Technologies, Inc. Method and apparatus for demounting wafers
DE3803424C2 (en) * 1988-02-05 1995-05-18 Gsf Forschungszentrum Umwelt Method for the quantitative, depth-differential analysis of solid samples
EP0397237B1 (en) * 1989-05-08 1994-05-18 Koninklijke Philips Electronics N.V. Method of cleaving a plate of brittle material
DE4100526A1 (en) * 1991-01-10 1992-07-16 Wacker Chemitronic DEVICE AND METHOD FOR AUTOMATICALLY SEPARATING STACKED DISCS
JPH04359518A (en) * 1991-06-06 1992-12-11 Nec Corp Manufacture of semiconductor device
FR2681472B1 (en) * 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
DE69233314T2 (en) * 1991-10-11 2005-03-24 Canon K.K. Process for the production of semiconductor products
US5269880A (en) * 1992-04-03 1993-12-14 Northern Telecom Limited Tapering sidewalls of via holes
FR2715503B1 (en) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Substrate for integrated components comprising a thin layer and its production method.
JP3257580B2 (en) * 1994-03-10 2002-02-18 キヤノン株式会社 Manufacturing method of semiconductor substrate
JP3293736B2 (en) * 1996-02-28 2002-06-17 キヤノン株式会社 Semiconductor substrate manufacturing method and bonded substrate
FR2725074B1 (en) * 1994-09-22 1996-12-20 Commissariat Energie Atomique METHOD FOR MANUFACTURING A STRUCTURE COMPRISING A THIN SEMI-CONDUCTIVE LAYER ON A SUBSTRATE
SG65697A1 (en) * 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
CA2233096C (en) * 1997-03-26 2003-01-07 Canon Kabushiki Kaisha Substrate and production method thereof
JP3667079B2 (en) * 1997-03-26 2005-07-06 キヤノン株式会社 Thin film formation method
JP2877800B2 (en) * 1997-03-27 1999-03-31 キヤノン株式会社 Method of separating composite member, separated member, separation device, method of manufacturing semiconductor substrate, and semiconductor substrate

Also Published As

Publication number Publication date
JP2001525991A (en) 2001-12-11
CA2290104A1 (en) 1998-11-19
EP0995227A4 (en) 2000-07-05
CN1146973C (en) 2004-04-21
CN1255237A (en) 2000-05-31
EP0995227A1 (en) 2000-04-26
WO1998052216A1 (en) 1998-11-19

Similar Documents

Publication Publication Date Title
AU7685198A (en) A controlled cleavage process
AU6958698A (en) A pre-operative technique
AU5347498A (en) A process for polymerizing olefins
AU1886597A (en) A microreactor
AUPO900097A0 (en) Process
AU9551498A (en) Process
AU3140397A (en) A crushing process
AU6904196A (en) A valvulotome
AUPN039595A0 (en) A structural member
AU9736998A (en) A noisescreen
AU9013498A (en) Method for a bending procedure
AU8429198A (en) Surface modifying process
AU4886097A (en) Process for producing a cholesterol-reduced substance
AUPO808297A0 (en) A process
AUPN633595A0 (en) A tool
AU9368598A (en) Recovery process
AU3440197A (en) Fluid-distributor for a substance-exchange-column
AU4380196A (en) A structural member
AU7380398A (en) Process for producing mercaptans
AU690505B3 (en) A pre-knotted knecktie
AUPO877497A0 (en) Improved process
AUPO710297A0 (en) A novel method
AUPO721497A0 (en) A method
AUPO933797A0 (en) Process
AUPO868597A0 (en) Process

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase