AU7685198A - A controlled cleavage process - Google Patents
A controlled cleavage processInfo
- Publication number
- AU7685198A AU7685198A AU76851/98A AU7685198A AU7685198A AU 7685198 A AU7685198 A AU 7685198A AU 76851/98 A AU76851/98 A AU 76851/98A AU 7685198 A AU7685198 A AU 7685198A AU 7685198 A AU7685198 A AU 7685198A
- Authority
- AU
- Australia
- Prior art keywords
- cleavage process
- controlled cleavage
- controlled
- cleavage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
- B26D3/28—Splitting layers from work; Mutually separating layers by cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
- B26F3/002—Precutting and tensioning or breaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4627697P | 1997-05-12 | 1997-05-12 | |
US60046276 | 1997-05-12 | ||
US09/026,027 US5994207A (en) | 1997-05-12 | 1998-02-19 | Controlled cleavage process using pressurized fluid |
US09026115 | 1998-02-19 | ||
US09/026,115 US6155909A (en) | 1997-05-12 | 1998-02-19 | Controlled cleavage system using pressurized fluid |
US09026027 | 1998-02-19 | ||
PCT/US1998/009567 WO1998052216A1 (en) | 1997-05-12 | 1998-05-11 | A controlled cleavage process |
Publications (1)
Publication Number | Publication Date |
---|---|
AU7685198A true AU7685198A (en) | 1998-12-08 |
Family
ID=27362676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU76851/98A Abandoned AU7685198A (en) | 1997-05-12 | 1998-05-11 | A controlled cleavage process |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0995227A4 (en) |
JP (1) | JP2001525991A (en) |
CN (1) | CN1146973C (en) |
AU (1) | AU7685198A (en) |
CA (1) | CA2290104A1 (en) |
WO (1) | WO1998052216A1 (en) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG70141A1 (en) | 1997-12-26 | 2000-01-25 | Canon Kk | Sample separating apparatus and method and substrate manufacturing method |
US6383890B2 (en) | 1997-12-26 | 2002-05-07 | Canon Kabushiki Kaisha | Wafer bonding method, apparatus and vacuum chuck |
US6540861B2 (en) * | 1998-04-01 | 2003-04-01 | Canon Kabushiki Kaisha | Member separating apparatus and processing apparatus |
JP2000349264A (en) * | 1998-12-04 | 2000-12-15 | Canon Inc | Method for manufacturing, use and utilizing method of semiconductor wafer |
JP4365920B2 (en) * | 1999-02-02 | 2009-11-18 | キヤノン株式会社 | Separation method and semiconductor substrate manufacturing method |
EP1039513A3 (en) * | 1999-03-26 | 2008-11-26 | Canon Kabushiki Kaisha | Method of producing a SOI wafer |
FR2795865B1 (en) * | 1999-06-30 | 2001-08-17 | Commissariat Energie Atomique | METHOD FOR MAKING A THIN FILM USING PRESSURIZATION |
FR2796491B1 (en) | 1999-07-12 | 2001-08-31 | Commissariat Energie Atomique | METHOD FOR TAKING OFF TWO ELEMENTS AND DEVICE FOR IMPLEMENTING SAME |
FR2797347B1 (en) * | 1999-08-04 | 2001-11-23 | Commissariat Energie Atomique | METHOD FOR TRANSFERRING A THIN FILM HAVING A SURFRAGILILIZATION STEP |
AU6905000A (en) * | 1999-08-10 | 2001-03-05 | Silicon Genesis Corporation | A cleaving process to fabricate multilayered substrates using low implantation doses |
US6653209B1 (en) | 1999-09-30 | 2003-11-25 | Canon Kabushiki Kaisha | Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device |
FR2809867B1 (en) * | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | FRAGILE SUBSTRATE AND METHOD FOR MANUFACTURING SUCH SUBSTRATE |
FR2811807B1 (en) * | 2000-07-12 | 2003-07-04 | Commissariat Energie Atomique | METHOD OF CUTTING A BLOCK OF MATERIAL AND FORMING A THIN FILM |
JP2002075917A (en) | 2000-08-25 | 2002-03-15 | Canon Inc | Device and method for separating sample |
FR2817395B1 (en) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING A SUBSTRATE, IN PARTICULAR FOR OPTICS, ELECTRONICS OR OPTOELECTRONICS AND SUBSTRATE OBTAINED THEREBY |
FR2818010B1 (en) | 2000-12-08 | 2003-09-05 | Commissariat Energie Atomique | METHOD OF MAKING A THIN LAYER INVOLVING THE INTRODUCTION OF GAS SPECIES |
FR2819099B1 (en) * | 2000-12-28 | 2003-09-26 | Commissariat Energie Atomique | METHOD FOR PRODUCING A STACKED STRUCTURE |
JP4803884B2 (en) * | 2001-01-31 | 2011-10-26 | キヤノン株式会社 | Method for manufacturing thin film semiconductor device |
JP2002305293A (en) | 2001-04-06 | 2002-10-18 | Canon Inc | Method of manufacturing semiconductor member, and method of manufacturing semiconductor device |
US6770966B2 (en) * | 2001-07-31 | 2004-08-03 | Intel Corporation | Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat |
US7351300B2 (en) | 2001-08-22 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and method of manufacturing semiconductor device |
FR2834380B1 (en) * | 2002-01-03 | 2005-02-18 | Soitec Silicon On Insulator | DEVICE FOR CUTTING LAYER OF SUBSTRATE, AND ASSOCIATED METHOD |
FR2847714B1 (en) * | 2002-11-27 | 2005-02-18 | Soitec Silicon On Insulator | SEMICONDUCTOR WAFER RECOVERY METHOD AND DEVICE |
EP1427002B1 (en) * | 2002-12-06 | 2017-04-12 | Soitec | A method for recycling a substrate using local cutting |
TWI233154B (en) | 2002-12-06 | 2005-05-21 | Soitec Silicon On Insulator | Method for recycling a substrate |
JP4151421B2 (en) * | 2003-01-23 | 2008-09-17 | セイコーエプソン株式会社 | Device manufacturing method |
JP2005039114A (en) * | 2003-07-17 | 2005-02-10 | Disco Abrasive Syst Ltd | Semiconductor wafer shifting device |
EP1730737B1 (en) * | 2004-03-22 | 2013-01-16 | Singulus Technologies AG | Method and apparatus for separating disc-shaped substrates |
DE102004041378B4 (en) | 2004-08-26 | 2010-07-08 | Siltronic Ag | Semiconductor wafer with a layered structure with low warp and bow and process for its production |
DE102005000826A1 (en) | 2005-01-05 | 2006-07-20 | Siltronic Ag | Semiconductor wafer with silicon-germanium layer and method for its production |
EP1894234B1 (en) | 2005-02-28 | 2021-11-03 | Silicon Genesis Corporation | Substrate stiffening method and system for a layer transfer. |
JP5064692B2 (en) * | 2006-02-09 | 2012-10-31 | 信越化学工業株式会社 | Manufacturing method of SOI substrate |
JP5064693B2 (en) * | 2006-02-13 | 2012-10-31 | 信越化学工業株式会社 | Manufacturing method of SOI substrate |
US8293619B2 (en) * | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
JP2008112847A (en) * | 2006-10-30 | 2008-05-15 | Shin Etsu Chem Co Ltd | Process for manufacturing single crystal silicon solar cell and single crystal silicon solar cell |
JP5284576B2 (en) * | 2006-11-10 | 2013-09-11 | 信越化学工業株式会社 | Manufacturing method of semiconductor substrate |
JP5166745B2 (en) * | 2007-03-07 | 2013-03-21 | 信越化学工業株式会社 | Method for producing single crystal silicon solar cell |
US20100193900A1 (en) * | 2007-07-13 | 2010-08-05 | National University Corporation Tohoku University | Soi substrate and semiconductor device using an soi substrate |
JP2010021398A (en) * | 2008-07-11 | 2010-01-28 | Disco Abrasive Syst Ltd | Method of treating wafer |
US7994064B2 (en) * | 2009-06-15 | 2011-08-09 | Twin Creeks Technologies, Inc. | Selective etch for damage at exfoliated surface |
WO2013058222A1 (en) * | 2011-10-18 | 2013-04-25 | 富士電機株式会社 | Solid-phase bonded wafer support substrate detachment method and semiconductor device fabrication method |
FR2995447B1 (en) * | 2012-09-07 | 2014-09-05 | Soitec Silicon On Insulator | METHOD FOR SEPARATING AT LEAST TWO SUBSTRATES ACCORDING TO A CHOSEN INTERFACE |
JP2014138189A (en) * | 2013-01-16 | 2014-07-28 | Silicon Genesis Corp | Controlled process and resulting device |
CN103077885B (en) * | 2013-01-31 | 2016-06-01 | 上海新傲科技股份有限公司 | Controlled thining method and semiconducter substrate |
JP6213046B2 (en) * | 2013-08-21 | 2017-10-18 | 信越半導体株式会社 | Manufacturing method of bonded wafer |
FR3032555B1 (en) * | 2015-02-10 | 2018-01-19 | Soitec | METHOD FOR DEFERRING A USEFUL LAYER |
CN104979262B (en) * | 2015-05-14 | 2020-09-22 | 浙江中纳晶微电子科技有限公司 | Wafer separation method |
CN106529159A (en) * | 2016-10-28 | 2017-03-22 | 山东理工大学 | Calculation method for natural angular frequency of transverse vibration of nanometer chord of piezoelectrically-controlled single atomic chain |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4466852A (en) * | 1983-10-27 | 1984-08-21 | At&T Technologies, Inc. | Method and apparatus for demounting wafers |
DE3803424C2 (en) * | 1988-02-05 | 1995-05-18 | Gsf Forschungszentrum Umwelt | Method for the quantitative, depth-differential analysis of solid samples |
EP0397237B1 (en) * | 1989-05-08 | 1994-05-18 | Koninklijke Philips Electronics N.V. | Method of cleaving a plate of brittle material |
DE4100526A1 (en) * | 1991-01-10 | 1992-07-16 | Wacker Chemitronic | DEVICE AND METHOD FOR AUTOMATICALLY SEPARATING STACKED DISCS |
JPH04359518A (en) * | 1991-06-06 | 1992-12-11 | Nec Corp | Manufacture of semiconductor device |
FR2681472B1 (en) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL. |
DE69233314T2 (en) * | 1991-10-11 | 2005-03-24 | Canon K.K. | Process for the production of semiconductor products |
US5269880A (en) * | 1992-04-03 | 1993-12-14 | Northern Telecom Limited | Tapering sidewalls of via holes |
FR2715503B1 (en) * | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Substrate for integrated components comprising a thin layer and its production method. |
JP3257580B2 (en) * | 1994-03-10 | 2002-02-18 | キヤノン株式会社 | Manufacturing method of semiconductor substrate |
JP3293736B2 (en) * | 1996-02-28 | 2002-06-17 | キヤノン株式会社 | Semiconductor substrate manufacturing method and bonded substrate |
FR2725074B1 (en) * | 1994-09-22 | 1996-12-20 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING A STRUCTURE COMPRISING A THIN SEMI-CONDUCTIVE LAYER ON A SUBSTRATE |
SG65697A1 (en) * | 1996-11-15 | 1999-06-22 | Canon Kk | Process for producing semiconductor article |
CA2233096C (en) * | 1997-03-26 | 2003-01-07 | Canon Kabushiki Kaisha | Substrate and production method thereof |
JP3667079B2 (en) * | 1997-03-26 | 2005-07-06 | キヤノン株式会社 | Thin film formation method |
JP2877800B2 (en) * | 1997-03-27 | 1999-03-31 | キヤノン株式会社 | Method of separating composite member, separated member, separation device, method of manufacturing semiconductor substrate, and semiconductor substrate |
-
1998
- 1998-05-11 EP EP98924756A patent/EP0995227A4/en not_active Withdrawn
- 1998-05-11 CN CNB988049767A patent/CN1146973C/en not_active Expired - Lifetime
- 1998-05-11 WO PCT/US1998/009567 patent/WO1998052216A1/en not_active Application Discontinuation
- 1998-05-11 CA CA002290104A patent/CA2290104A1/en not_active Abandoned
- 1998-05-11 JP JP54937198A patent/JP2001525991A/en active Pending
- 1998-05-11 AU AU76851/98A patent/AU7685198A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2001525991A (en) | 2001-12-11 |
CA2290104A1 (en) | 1998-11-19 |
EP0995227A4 (en) | 2000-07-05 |
CN1146973C (en) | 2004-04-21 |
CN1255237A (en) | 2000-05-31 |
EP0995227A1 (en) | 2000-04-26 |
WO1998052216A1 (en) | 1998-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |