AU6243798A - Methods and apparatus for integrating optical and interferometric lithography toproduce complex patterns - Google Patents

Methods and apparatus for integrating optical and interferometric lithography toproduce complex patterns

Info

Publication number
AU6243798A
AU6243798A AU62437/98A AU6243798A AU6243798A AU 6243798 A AU6243798 A AU 6243798A AU 62437/98 A AU62437/98 A AU 62437/98A AU 6243798 A AU6243798 A AU 6243798A AU 6243798 A AU6243798 A AU 6243798A
Authority
AU
Australia
Prior art keywords
toproduce
methods
complex patterns
integrating optical
interferometric lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU62437/98A
Inventor
S. R. J. Brueck
Xiaolan Chen
Andrew Frauenglass
Saleem H. Zaidi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of New Mexico UNM
Original Assignee
University of New Mexico UNM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of New Mexico UNM filed Critical University of New Mexico UNM
Publication of AU6243798A publication Critical patent/AU6243798A/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
AU62437/98A 1997-01-21 1998-01-21 Methods and apparatus for integrating optical and interferometric lithography toproduce complex patterns Abandoned AU6243798A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US78606697A 1997-01-21 1997-01-21
US08786066 1997-01-21
PCT/US1998/000992 WO1998032054A1 (en) 1997-01-21 1998-01-21 Methods and apparatus for integrating optical and interferometric lithography to produce complex patterns

Publications (1)

Publication Number Publication Date
AU6243798A true AU6243798A (en) 1998-08-07

Family

ID=25137493

Family Applications (1)

Application Number Title Priority Date Filing Date
AU62437/98A Abandoned AU6243798A (en) 1997-01-21 1998-01-21 Methods and apparatus for integrating optical and interferometric lithography toproduce complex patterns

Country Status (5)

Country Link
EP (1) EP0960356A1 (en)
JP (3) JP2001507870A (en)
AU (1) AU6243798A (en)
TW (1) TW440925B (en)
WO (1) WO1998032054A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6140660A (en) 1999-03-23 2000-10-31 Massachusetts Institute Of Technology Optical synthetic aperture array
EP1255162A1 (en) 2001-05-04 2002-11-06 ASML Netherlands B.V. Lithographic apparatus
US20050073671A1 (en) * 2003-10-07 2005-04-07 Intel Corporation Composite optical lithography method for patterning lines of substantially equal width
US7142282B2 (en) 2003-10-17 2006-11-28 Intel Corporation Device including contacts
US7532403B2 (en) 2006-02-06 2009-05-12 Asml Holding N.V. Optical system for transforming numerical aperture
KR101229786B1 (en) 2011-08-23 2013-02-05 한국과학기술원 Heterodyne interference lithography apparatus, method for drawing pattern using the same device, wafer, and semiconductor device
JP2013145863A (en) 2011-11-29 2013-07-25 Gigaphoton Inc Two-beam interference apparatus and two-beam interference exposure system
TWI607277B (en) 2012-03-28 2017-12-01 Hoya Corp Photomask substrate substrate, substrate with multilayer reflection film, transmission type photomask substrate, reflection type photomask substrate, transmission type photomask, reflection type photomask, and method for manufacturing semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3164815B2 (en) * 1990-09-19 2001-05-14 株式会社日立製作所 Method for manufacturing semiconductor device
US5415835A (en) * 1992-09-16 1995-05-16 University Of New Mexico Method for fine-line interferometric lithography
JPH07326573A (en) * 1994-04-06 1995-12-12 Hitachi Ltd Pattern forming method and projection aligner
US5759744A (en) * 1995-02-24 1998-06-02 University Of New Mexico Methods and apparatus for lithography of sparse arrays of sub-micrometer features

Also Published As

Publication number Publication date
TW440925B (en) 2001-06-16
JP5048801B2 (en) 2012-10-17
JP2001507870A (en) 2001-06-12
JP2010177687A (en) 2010-08-12
EP0960356A1 (en) 1999-12-01
WO1998032054A1 (en) 1998-07-23
JP2010199594A (en) 2010-09-09

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