KR101229786B1 - Heterodyne interference lithography apparatus, method for drawing pattern using the same device, wafer, and semiconductor device - Google Patents

Heterodyne interference lithography apparatus, method for drawing pattern using the same device, wafer, and semiconductor device Download PDF

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KR101229786B1
KR101229786B1 KR1020110084000A KR20110084000A KR101229786B1 KR 101229786 B1 KR101229786 B1 KR 101229786B1 KR 1020110084000 A KR1020110084000 A KR 1020110084000A KR 20110084000 A KR20110084000 A KR 20110084000A KR 101229786 B1 KR101229786 B1 KR 101229786B1
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pattern
laser beam
interference
laser
different wavelengths
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KR1020110084000A
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Korean (ko)
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양민양
강봉철
이주형
김건우
노지환
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한국과학기술원
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Priority to PCT/KR2011/009928 priority patent/WO2013027900A1/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The present invention relates to a heterodyne interference lithography apparatus and a method for forming a micropattern using the apparatus. The present invention relates to an interference lithography apparatus and a pattern forming method capable of forming an indirect phenomenon using a laser capable of generating two or more different wavelengths to form a nanopattern, and simultaneously forming a micropattern by a beat phenomenon. To this end, the multi-laser light source unit 100 for generating laser beams having different wavelengths; A polarized beam splitter 200 for transmitting or reflecting a laser beam; A spatial beam separator (300) for spatially separating the transmitted laser beams having different wavelengths; A beam expander 400 for expanding the inverted laser beam; And forming a first pattern by causing interference with each other by reflection of the extended laser beam and the extended laser beam, and generating a second composite pattern by generating a new synthesized wave by interference of waves caused by different wavelengths. Disclosed is a heterodyne interference lithographic apparatus comprising a portion 500.

Figure R1020110084000

Description

Heterodyne interference lithography apparatus, method for drawing pattern using the same device, wafer, and semiconductor device

The present invention relates to a heterodyne interference lithography apparatus and a method for forming a micropattern using the apparatus. More specifically, an interference lithography apparatus and a pattern forming method capable of forming an indirect phenomenon using a laser capable of generating two or more different wavelengths to form a nanopattern, and simultaneously forming a micropattern by a beat phenomenon. It is about.

Recently, there is an increasing demand for miniaturization and high performance of products in the mining, display, semiconductor and bio industries. In order to meet such demands, it is necessary to economically and easily manufacture a micropattern (nanoscale or microscale pattern shape).

Conventionally, a method of forming a fine pattern is E-beam lithography (E-beam lithogrephy). This method focuses electron beams to form nanometer-level patterns. Such a method can produce a variety of fine patterns, but there is a problem in that the manufacturing of a large area is limited because it takes a lot of time.

In addition, in order to solve these problems, a single stamp is made through a photo process using the principle of laser interference lithography, and photolithography is replaced with nanoimprint lithography to mass produce micropatterns having a nanometer line width through an etching process. Can be.

Laser interference lithography is also called holographic lithography, which, unlike photolithography, has continued to expand its field of application because of the advantage that large structures of uniform shape can be produced without the use of photo masks. . The shape of the nanostructures fabricated on the photoresist using holographic lithography is influenced by the light intensity or exposure energy and development time to expose the photoresist. Macroscopic modeling techniques have been studied by FH Dill in 1975. have.

Holographic lithography is a technique for fabricating nanostructures on photoresist by using interference of two light incident on the photoresist in different directions. In this case, the intensity of light at an arbitrary point on the photoresist film is expressed by Equation 1 below.

Figure 112011065367115-pat00001

Where I 1 and I 2 represent the intensity of light incident from each direction, k 0 represents the propagation constant, θ represents the angle of incidence, and Φ 1 and Φ 2 represent the angle of light incident from each direction. As can be seen from the above equation, when the light intensity is the same (I 1 = I 2 = I 0 ), the intensity of the interference on the plane is theoretically determined by the cosine term from the minimum I min = 0 to the maximum I max = 4I 0 . Has In addition, the period P of the light intensity due to the interference of the two lights is arranged as follows.

Figure 112011065367115-pat00002

Where λ represents the wavelength of light used. Such an interference lithography method has an advantage of rapidly forming a fine pattern with exposure of several to several tens of seconds, but generates many basic patterns such as lines or dots, and uniformly produces a wide range of limitations in forming various patterns. There is. In addition, there is a disadvantage that the size and spacing of the pattern that can be realized by the incident angle and wavelength is determined.

In order to solve the above-mentioned disadvantages, a dichroic mirror is disclosed in 2010-100177 (name of the invention: a heterodyne interference lithography apparatus and a fine pattern forming method using the apparatus), which is a prior patent document (hereinafter referred to as a prior patent document) of the present invention. Disclosed is a light control system based on. Since the prior patent document uses a dichroic mirror, it uses the principle of a high frequency filter as shown in FIG. The principle of the high frequency filter is to transmit high frequency and block low frequency. Therefore, by using the principle of the high frequency filter, the high frequency beam is transmitted and the low frequency beam is blocked. Since two different beams are separated by the principle of the high-frequency filter, sufficient strength cannot be obtained in the case of a long wavelength beam and it is not easy to completely separate the two beams.

Therefore, the present invention was created in order to solve the problems of the prior patent document as described above, the nano-pattern which can adjust the intensity for each beam without any loss in the intensity of the beam when separating beams of different wavelengths Its object is to provide an invention that can simultaneously form a micro pattern.

However, the objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

An object of the present invention described above, the multi-laser light source unit 100 for generating laser beams having different wavelengths; A polarized beam splitter 200 for transmitting or reflecting a laser beam; A spatial beam separator (300) for separating optical paths of the laser beams having different wavelengths transmitted; A beam expander 400 for expanding the inverted laser beam; And forming a first pattern by causing interference with each other by reflection of the extended laser beam and the extended laser beam, and generating a second composite pattern by generating a new synthesized wave by interference of waves caused by different wavelengths. It can be achieved by providing a heterodyne interference lithography apparatus comprising a portion (500).

In addition, the first pattern is characterized in that the nanoscale pattern by the interference fringe.

The synthesized wave may include a high frequency component and a low frequency component, and the second pattern may be a micro pattern formed by the low frequency component.

In addition, the different wavelengths are characterized in that the wavelength for generating the interference frequency.

In addition, the polarization beam splitter 200 transmits the P-polarized beam and reflects the S-polarized beam.

In addition, the polarization beam splitter 200 is characterized in that for reflecting the inverted laser beam.

In addition, the spatial beam splitter 300 is characterized in that to form a variety of interference patterns according to the intensity by relatively adjusting the intensity of the laser beam having a different wavelength.

On the other hand, an object of the present invention is the multi-laser light source unit 100 to generate a laser beam having a different wavelength (S610); Polarizing beam splitter 200 to transmit the laser beam (S620); Inverting the polarization component of the laser beam transmitted through the spatial beam splitter 300 (S630); The polarized beam splitter 200 reflects the inverted laser beam (S640); And expanding the reflected laser beam by the beam expander 400 (S650), thereby forming a first pattern by causing interference with each other by reflection of the extended laser beam and the extended laser beam, and different wavelengths. It can be achieved by providing a pattern forming method using a heterodyne interference lithography apparatus, characterized in that the second pattern is formed by generating a new synthesized wave by the interference of the wave by.

In addition, the first pattern is characterized in that the nanoscale pattern by the interference fringe.

The synthesized wave may include a high frequency component and a low frequency component, and the second pattern may be a micro pattern formed by the low frequency component.

In addition, the different wavelengths are characterized in that the wavelength for generating the interference frequency.

On the other hand, the object of the present invention can be achieved by providing a semiconductor wafer manufactured using a heterodyne interference lithography apparatus.

According to the present invention as described above there is an effect that can simultaneously form a nano-pattern and a micro-pattern capable of controlling the intensity for each beam without any loss in the beam intensity when separating beams of different wavelengths.

The following drawings, which are attached to this specification, illustrate one preferred embodiment of the present invention, and together with the detailed description thereof, serve to further understand the technical spirit of the present invention. It should not be construed as limited.
1 is a diagram of a wavelength-specific transmittance data sheet of a dichroic mirror used in a conventional heterodyne interference lithography apparatus.
2 is a block diagram showing the configuration of a heterodyne interference lithographic apparatus according to the present invention;
3 and 4 is a view showing the beat phenomenon according to the present invention,
5 is a graph of simulation results of interference intensity caused by single exposure according to the present invention;
FIG. 6 is a graph showing a result of simulating interference intensity when the specimen is rotated by 90 ° by the rotating part after one exposure according to FIG. 5,
FIG. 7 is a view of a fine pattern formed on a specimen according to the grating pattern of FIG. 5,
FIG. 8 is a view of a fine pattern formed on a specimen according to the grating pattern of FIG. 6,
9 is a flow chart sequentially showing a pattern forming method according to the present invention.

Hereinafter, with reference to the drawings will be described a preferred embodiment of the present invention. In addition, the embodiment described below does not unduly limit the content of the present invention described in the claims, and the entire structure described in this embodiment is not necessarily essential as the solution means of the present invention.

Heterodyne interference Lithography  Configuration of the device>

As shown in FIG. 2, the heterodyne interference lithography apparatus according to the present invention has a multi-laser light source unit 100, a polarized beam splitter 200, a spatial beam splitter 300, a beam expander 400, and a pattern generator ( 500) to form a fine pattern on the specimen. Hereinafter, a configuration of a heterodyne interference lithography apparatus according to the present invention will be described in detail with reference to FIGS. 2 to 8.

The multi-laser light source unit 100 according to the present invention generates laser beams having different wavelengths (frequency). The laser beams of different wavelengths generated at this time are preferably wavelengths capable of generating beat frequencies with at least two laser beams.

The heterodyne method does not use a single wavelength light source, but uses a light source of different wavelengths to cause a beat phenomenon to form various interference fringe patterns.

As illustrated in FIG. 3, the beat phenomenon is a phenomenon in which two waves having similar frequencies interfere with each other to create a new synthesized wave. The interference of the two waves is shown in Equation 3 below.

Figure 112011065367115-pat00003

(Where f 1 and f 2 are the frequencies of the two waves)

If the frequencies of the two waves are similar, the synthesized wave has the term having the median value of the two waves as the dominant wave component, and the term with the relatively slow period becomes the term that modulates the amplitude.

The beat frequency as shown in FIG. 4 is generated by different frequencies (frequency) f 1 and f 2 of FIG. 3, and the beat frequency is generated as the frequency of the low frequency component and the frequency of the high frequency component, respectively.

At this time, the beat phenomenon is a phenomenon over time, the present invention uses the beat phenomenon spatially. In other words, the beat amplitude over time varies with time as shown in FIG. Do. That is, the frequency amplitudes at different points are different, but the frequency amplitude at any point does not change with time. In the present invention, a frequency generated by using the beat phenomenon spatially will be referred to as a frequency caused by double interference.

Therefore, the heterodyne interference lithography apparatus according to the present invention may form a first fine pattern (nano pattern) by causing interference between a laser beam that is directly incident on a specimen and a laser beam that is reflected and incident, and has a laser having different wavelengths. The second fine pattern (micro pattern) may be formed by the bi-interference low frequency component generated by the beam. At this time, it is preferable that the first fine pattern is a pattern of approximately nano size, and the second fine pattern is a pattern of approximately micro size.

The above-described multi-laser light source unit 100 preferably uses a multi-argon ion laser scanning device as a device for generating laser beams having different wavelengths. Laser beams generated in multi-argon ion laser scanners generate various wavelength bands. In general, it can generate several to several tens of wavelengths between 300-500 nm. In one embodiment of the present invention was used a laser beam having a wavelength of 351.1nm and 363.8nm of the P polarization component.

The reflecting means 10 according to the present invention comprises a first reflecting means 11 and a second reflecting means 13. The first reflecting means 11 changes the moving direction of the laser beam by reflecting the laser beam emitted from the multi-laser light source unit 100 in a predetermined direction. In addition, the second reflecting means 13 reflects the laser beam reflected by the first reflecting means 11 once again and irradiates the polarized beam splitter 200 to be described later. The first and second reflecting means 11 and 13 described above preferably reflect the laser beam in the direction of 90 °. However, it will be apparent to those skilled in the art that the number and positions of the reflecting means 10 may be variously provided according to the embodiment.

The polarization beam splitter 200 according to the present invention transmits or reflects the laser beam reflected by the second reflecting means 13. The polarization beam splitter 200 transmits the P-polarized laser beam and reflects the S-polarized laser beam. Therefore, the light source emitted from the multi-laser light source unit 100 is a P-polarized component and the laser beam reflected by the second reflecting means 13 is transmitted by the polarization beam splitter 200.

Advantages of the configuration of the polarization beam splitter-based light quantity control system compared to the dichroic mirror-based system configuration used in the above-mentioned prior art of the present invention are as follows.

In the case of a dichroic mirror based system, a principle similar to that of the high frequency filter is used as shown in FIG. 1. In other words, the two beams having different wavelengths are separated using the principle of transmitting high frequency beams and blocking low frequency beams, so that it is difficult to obtain sufficient intensity and to separate the two beams.

Because the ideal high frequency filter does not incline the pass band and the non-pass band, it can separate the different frequencies accurately, but the general high frequency filter has the inclination 70, so in the case of the wavelength of the inclined region, Is not easy. Accordingly, a polarization beam splitter-based light amount control system capable of accurately separating two beams and controlling the intensity of each beam without any loss in the intensity of the two beams has been proposed in the present invention.

In the spatial beam splitter 300 to be described later, the laser beam is inverted from the P polarized light to the S polarized beam, and the inverted laser beam (S polarized beam) is reflected by the polarized beam splitter 200 again to reflect the fourth reflecting means 20 described later. Incident). However, it will be apparent to those skilled in the art that the number and location of the fourth reflecting means 20 may be variously provided according to the embodiment.

The spatial beam splitter 300 according to the present invention includes first and second prisms 310 and 320, half-wavelength plates 330a and 330b, quarter-wavelength plate 340, and a third one. The polarizing component of the P-polarized laser beam which has been configured by the reflecting means 350 and passed through the polarization beam splitter 200 is inverted into the S-polarized laser beam.

In detail, the first prism 310 separates the optical path of the P-polarized laser beam transmitted from the polarization beam splitter 200 according to each wavelength. This is due to the difference in refractive index with wavelength. In one embodiment of the invention the laser beams of 351.1 nm and 363.8 nm are separated into two paths.

The P-polarized laser beam split into two paths becomes parallel light by passing through the second prism 320 which is an inverted prism.

The laser beam of 363.8 nm according to an embodiment of the present invention has a half wavelength plate 330b → four half wave plate 340 → third reflecting means 350 → four half wave plate 340 → half wave plate 330a. Proceed. In addition, the 351.1 nm laser beam proceeds in the order of the half-wave plate 330a → 4 half-wave plate 340 → third reflecting means 350 → 4 half-wave plate 340 → half-wave plate 330b. The reason why the spatial beam splitter 300 is configured in this order is to reflect the beam incident to the P polarized light into the S polarized state so that the beam is not transmitted in the initial direction from the polarized beam splitter 200 and reflected in a new path.

In FIG. 2, for convenience, a beam of 363.8 nm is incident toward the third reflecting means 350, and a beam of 351.1 nm is reflected in a direction reflecting from the third reflecting means 350. Of course, nm beams are incident and reflected at the same time, respectively.

Here, the half-wave plate 330a, 330b can block the polarized beam in the same principle as the sunglass. That is, when the polarization direction of the beam and the polarization direction of the plate are placed side by side, the maximum output of the laser beam is obtained, and when placed vertically, the laser beam is not transmitted, so the intensity of the beam becomes zero. Using this principle, various interference fringes can be obtained by adjusting the intensity of the two beams relatively.

The 363.8 nm laser beam that has passed through the half-wave plate 330b is aligned from the P-polarized beam to the S-polarized beam, and the laser beam that has passed through the half-wave plate 340 is again aligned from the S-polarized beam to rotationally polarized light. The rotation polarized light is reflected by the third reflecting means 350 and aligned by the fourth half wave plate 340 again to the P polarization beam, and finally by the half wave plate 330a to the S polarization beam.

In conclusion, the P-polarized beam emitted from the polarized beam splitter 200 is aligned with the S-polarized beam by the spatial beam splitter 300 and is incident to the polarized beam splitter 200 again. The incident S-polarized beam is reflected in the 90 ° direction by the polarization beam splitter 200. The reflected S-polarized beam is reflected by the fourth reflecting means 20 in the 90 ° direction and is incident on the half-wave plate 30. The incident S-polarized beam is aligned with the P-polarized beam again by the half-wave plate 30.

In the beam expander 400 according to the present invention, an area of a laser beam is greatly extended by a spatial filter composed of a focusing lens 410 and a pinhole 420. This is to uniformly irradiate a large area during specimen exposure.

In addition, the diaphragm 40 is composed of an iris, an optical diaphragm, and the like to adjust the amount of light of the laser beam extended by the beam expander 400.

Alignment lens 50 is a collimation lens (collimation lens) so that the laser beam, the amount of light controlled by the aperture 40, proceeds in parallel.

The Lloyd interferometer 60 according to the present invention is a pattern generator 500 in which a first pattern and a second pattern are formed, and includes a base part 61a and 61b, a specimen 63, and a reflector 65. A fine pattern is formed on the specimen 63. The Lloyd interferometer 60 is a structure in which two plates face each other in a vertical direction. The specimen is placed on one side so that incident light is directly scanned, and the mirror is placed on the other side to reflect light and indirectly scans the specimen. Let the lights interfere with each other. Therefore, the specimen 63 according to the embodiment of the present invention is positioned on the base portion 61a and the reflecting portion 65 is positioned on the base portion 61b.

The specimen 63 has a first pattern formed by interference by a laser beam incident in parallel by the alignment lens 50 and a laser beam reflected by the reflector 65. In addition, a second pattern is formed by the low frequency beat frequency generated by the beat phenomenon by the laser beam having different wavelengths generated by the multi-laser light source unit 100. In this case, the generated first pattern is a nano pattern and the second pattern is a micro pattern.

Therefore, it is difficult to form a pattern of two scales at a time with a single wavelength process, so that the formation of a nano-micro composite pattern array, which has to be performed twice or three times, can be realized by a single process.

In addition, it is possible to vary the value of the beat frequency by changing the frequency of the heterogeneous signal causing the beat or by changing the number of frequencies causing the interference. In addition, by changing the amplitude (intensity of the laser beam) of each frequency it is possible to vary the pattern shape of the nano and micro scale formed.

5 illustrates a graph of simulation results of interference intensity caused by one-time exposure according to one embodiment of the present invention. As shown in FIG. 5, the interference intensity is in the form of a line. 6 shows a graph of simulation results of the interference intensity when the Lloyd interferometer 60 is rotated by 90 ° after one exposure according to FIG. 5. A grating pattern is formed by the intensity distribution, and the photoresist of the specimen 63 is selectively developed by the grating pattern to form a fine pattern.

FIG. 7 illustrates a micro pattern formed on the specimen according to the grating pattern of FIG. 5, and FIG. 8 illustrates a micro pattern formed on the specimen according to the grating pattern of FIG. 6. It can be seen that the shape of the micropatterns formed in FIGS. 7 and 8 is formed in the same pattern as the grating pattern, which is the interference intensity distribution (FIGS. 5 and 6). In addition, it can be seen from FIG. 7 and FIG. 8 that a nano pattern array using an interference fringe and a micro pattern array due to beat generation are formed at the same time.

As a result, the shape of the fine pattern is determined according to the shape of the grating pattern which is the interference intensity distribution. When more wavelengths overlap (using the multi-laser light source unit 100 that oscillates more wavelengths), more complicated shapes and more various shapes can be obtained.

<Fine Pattern Formation Method>

9 is a flowchart sequentially illustrating a pattern forming method using a heterodyne interference lithography apparatus according to the present invention. An embodiment of a pattern forming method that can be performed by a heterodyne interference lithography apparatus having the above-described configuration is shown in FIG. 9. Hereinafter, a pattern forming method using a heterodyne interference lithography apparatus according to the present invention will be described in detail with reference to FIG. 9.

First, the multi-laser light source unit 100 performs a step (S610) of generating a P-polarized laser beam having different wavelengths. In this case, the multi-laser light source unit 100 generates and emits a laser beam having at least two different wavelengths.

Next, the polarized beam splitter 200 transmits the laser beam (S620). The polarization beam splitter 200 transmits the P-polarized laser beam and reflects the S-polarized laser beam. In the present invention, since the multi-laser light source unit 100 generates the P-polarized laser beam and is incident on the polarized beam splitter 200, the polarized beam splitter 200 transmits the P-polarized laser beam.

Next, the spatial beam splitter 300 inverts the polarization component of the transmitted P-polarized laser beam (S630). In detail, the inverting step is separated into two light sources by passing the P-polarized laser beam transmitted from the polarization beam splitter 200 through the first prism 310. The two separated light sources travel side by side by the second prism 320.

Of the two light sources traveling side by side, the P-polarized laser beam of 363.8 nm is the half wavelength plate 330b → four half wave plate 340 → the third reflecting means 350 → four half wave plate 340 → half wave plate 330a. Proceed in order.

By passing through the half-wave plate 330b, it is aligned with S polarization, and by passing through the half-wave plate 340, is aligned with rotation polarization, and is reflected by the third reflecting means 350, and again by the fourth half-wave plate 340. It is aligned with P polarization and is again aligned with S polarization by the half-wave plate 330a.

The laser beam aligned by the S-polarized light by the half-wave plate 330a is again incident on the polarization beam splitter 200 via the second prism 320 and the first prism 310. However, the 351.1 nm laser beam proceeds in the order of the half-wave plate 330a → 4 half-wave plate 340 → third reflecting means 350 → 4 half-wave plate 340 → half-wave plate 330b.

Next, the polarization beam splitter 200 reflects the laser beam inverted from P polarized light to S polarized light (S640). Since the polarization beam splitter 200 passes P-polarized light and inverts S-polarized light, it has been described above.

Next, a step of reflecting in the 90 ° direction by the fourth reflecting means 20 and sorting from S polarization to P polarization again by the half wave plate 30 is performed.

Next, the beam expander 400 extends the reflected laser beam (S650).

Next, the laser beam extended by the beam expander 400 performs a step of adjusting the amount of light by the aperture 40 and causing the laser beam to run in parallel by the alignment lens 50.

Finally, the first pattern is formed on the specimen 63 by the interference of the laser beam traveled in parallel with the laser beam reflected by the reflector 65, and the second pattern by the beat is formed ( S660).

<Semiconductor Wafer and Semiconductor Device>

By using the heterodyne interference lithography apparatus according to the present invention, nano- and micro-sized micropatterns can be formed on the specimen. Wafers made by this pattern can produce more efficient wafers.

This is because a single wavelength micropattern process cannot form patterns of two scales at a time. The wafer according to the present invention can form a pattern of two scales at a time to increase the wafer mass production efficiency.

On the other hand, such a wafer can be produced and mass produced semiconductor devices used in various applications.

As mentioned above, although demonstrated with reference to one Embodiment of this invention, this invention is not limited to this, A various deformation | transformation and an application are possible. In other words, those skilled in the art can easily understand that many variations are possible without departing from the gist of the present invention.

10: reflecting means
11: first reflecting means
13: second reflecting means
20: fourth reflecting means
30: half-wave plate
40: aperture
50: alignment lens
60: Lloyd Interferometer
61a, 61b: base portion
63: Psalms
65 reflector
70: slope
100: multi laser light source
200: polarized beam separator
300: space type beam separator
310: first prism
320: second prism
330a, 330b: half-wave plate
340: 4-wavelength plate
350: third reflecting means
400: beam expander
410: Focus Lens
420: pinhole
500: pattern generator

Claims (13)

A multi-laser light source unit 100 for generating laser beams having different wavelengths;
A polarized beam splitter (200) for transmitting or reflecting the laser beam;
A spatial beam separator (300) for separating optical paths of the laser beams having different wavelengths transmitted;
A beam expander 400 for expanding the inverted laser beam; And
The first pattern is formed by causing interference with each other by the reflection of the extended laser beam and the extended laser beam, and the second pattern is formed by generating a new composite wave by the interference of the waves caused by the different wavelengths. Heterodyne interference lithography apparatus comprising a; generator 500.
The method of claim 1,
And wherein the first pattern is a nano-sized pattern by an interference fringe.
The method of claim 1,
The synthesized wave includes a high frequency component and a low frequency component,
And the second pattern is a micro pattern formed by the low frequency component.
The method of claim 1,
Wherein said different wavelengths are wavelengths that allow for the generation of a double interference frequency.
The method of claim 1,
The polarization beam splitter 200,
A heterodyne interference lithographic apparatus characterized by transmitting a beam of P-polarized light and reflecting a beam of S-polarized light.
The method of claim 1,
The polarization beam splitter 200,
And reflect the inverted laser beam.
The method of claim 1,
The spatial beam separator 300,
And adjusting the intensities of the laser beams having different wavelengths to form various interference fringes according to the adjusted intensities.
The method of claim 1,
The spatial beam separator 300,
Heterodyne interference lithography apparatus, characterized in that for inverting the polarization component of the transmitted laser beam.
Generating laser beams having different wavelengths by the multi-laser light source unit 100 (S610);
Polarizing beam splitter (200) transmitting the laser beam (S620);
Inverting the polarization component of the laser beam transmitted through the spatial beam splitter 300 (S630);
Reflecting the inverted laser beam by the polarization beam splitter (200) (S640); And
The beam expander 400 extends the reflected laser beam (S650);
Forming a first pattern by causing interference with each other by the reflection of the extended laser beam and the extended laser beam, and forming a second pattern by generating a new composite wave by the interference of the waves by the different wavelengths. A pattern forming method using a heterodyne interference lithography apparatus.
The method of claim 9,
The first pattern is a pattern forming method using a heterodyne interference lithography apparatus, characterized in that the nanoscale pattern by the interference fringe.
The method of claim 9,
The synthesized wave includes a high frequency component and a low frequency component,
And the second pattern is a micro pattern formed by the low frequency component.
The method of claim 9,
Wherein the different wavelengths are wavelengths for generating a double interference frequency.
delete
KR1020110084000A 2011-08-23 2011-08-23 Heterodyne interference lithography apparatus, method for drawing pattern using the same device, wafer, and semiconductor device KR101229786B1 (en)

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PCT/KR2011/009928 WO2013027900A1 (en) 2011-08-23 2011-12-21 Heterodyne interference lithography apparatus, and method for forming micro-patterns, wafer, and semiconductor device using the apparatus

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KR101753355B1 (en) 2016-07-20 2017-07-06 서울대학교산학협력단 Laser holographic lithography device and method of manufacturing for pattern
KR101834917B1 (en) 2016-09-12 2018-03-08 한국과학기술원 Method of Fabricating Nano Dot Pattern and SERS Plate using 4-Beam Laser Interference Lithography

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Publication number Priority date Publication date Assignee Title
KR101753355B1 (en) 2016-07-20 2017-07-06 서울대학교산학협력단 Laser holographic lithography device and method of manufacturing for pattern
KR101834917B1 (en) 2016-09-12 2018-03-08 한국과학기술원 Method of Fabricating Nano Dot Pattern and SERS Plate using 4-Beam Laser Interference Lithography

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