AU2003210504A1 - Organic compositions for low dielectric constant materials - Google Patents

Organic compositions for low dielectric constant materials

Info

Publication number
AU2003210504A1
AU2003210504A1 AU2003210504A AU2003210504A AU2003210504A1 AU 2003210504 A1 AU2003210504 A1 AU 2003210504A1 AU 2003210504 A AU2003210504 A AU 2003210504A AU 2003210504 A AU2003210504 A AU 2003210504A AU 2003210504 A1 AU2003210504 A1 AU 2003210504A1
Authority
AU
Australia
Prior art keywords
dielectric constant
low dielectric
constant materials
organic compositions
compositions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003210504A
Other versions
AU2003210504A8 (en
Inventor
Paul G. Apen
Amauel Gebrebrhan
Nancy Iwamoto
Boris Korolev
Kreisler Lau
Chan-En Li
Annath Naman
John G. Sikonia
Nassrin Sleiman
Ruslan Zherebin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/158,513 external-priority patent/US7141188B2/en
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of AU2003210504A8 publication Critical patent/AU2003210504A8/en
Publication of AU2003210504A1 publication Critical patent/AU2003210504A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Insulating Materials (AREA)
AU2003210504A 2002-01-15 2003-01-14 Organic compositions for low dielectric constant materials Abandoned AU2003210504A1 (en)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
USNOTGIVEN 1999-12-23
US35018702P 2002-01-15 2002-01-15
US60/350,187 2002-01-15
US35055702P 2002-01-22 2002-01-22
US60/350,557 2002-01-22
US35301102P 2002-01-30 2002-01-30
US60/353,011 2002-01-30
US37621902P 2002-04-29 2002-04-29
US60/376,219 2002-04-29
US37842402P 2002-05-07 2002-05-07
US60/378,424 2002-05-07
US10/158,513 US7141188B2 (en) 2001-05-30 2002-05-30 Organic compositions
US10/158,513 2002-05-30
PCT/US2003/000948 WO2003060979A2 (en) 2002-01-15 2003-01-14 Organic compositions for low dielectric constant materials

Publications (2)

Publication Number Publication Date
AU2003210504A8 AU2003210504A8 (en) 2003-07-30
AU2003210504A1 true AU2003210504A1 (en) 2003-07-30

Family

ID=27558468

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003210504A Abandoned AU2003210504A1 (en) 2002-01-15 2003-01-14 Organic compositions for low dielectric constant materials

Country Status (6)

Country Link
EP (1) EP1466356A2 (en)
JP (1) JP2005516382A (en)
KR (1) KR20040104454A (en)
CN (1) CN1643669A (en)
AU (1) AU2003210504A1 (en)
WO (1) WO2003060979A2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4878779B2 (en) * 2004-06-10 2012-02-15 富士フイルム株式会社 Film forming composition, insulating film and electronic device
US7491658B2 (en) * 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
US7531209B2 (en) 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
JP4659486B2 (en) * 2005-03-01 2011-03-30 富士フイルム株式会社 Insulating film for electronic device, electronic device, and method for producing insulating film for electronic device
JP2006257212A (en) * 2005-03-16 2006-09-28 Fuji Photo Film Co Ltd Film-forming composition, insulation film using it and electronic device
JP2007031663A (en) * 2005-07-29 2007-02-08 Fujifilm Corp Film-forming composition and insulating film and electron device formed by using the same
JP2007314778A (en) * 2006-04-26 2007-12-06 Fujifilm Corp Film forming composition, insulation film formed by using the composition and electronic device
US7790234B2 (en) 2006-05-31 2010-09-07 Michael Raymond Ayers Low dielectric constant materials prepared from soluble fullerene clusters
WO2007143025A2 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Porous inorganic solids for use as low dielectric constant materials
US7883742B2 (en) 2006-05-31 2011-02-08 Roskilde Semiconductor Llc Porous materials derived from polymer composites
WO2007143026A2 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials
US20100069578A1 (en) * 2006-11-17 2010-03-18 Rudolf Faust Functional Hydrocarbon Polymers and Process for Producing Same
JP2008231259A (en) * 2007-03-20 2008-10-02 Sumitomo Bakelite Co Ltd Organic insulating material
JP2009013116A (en) 2007-07-05 2009-01-22 Daicel Chem Ind Ltd Ethynylphenylbiadamantane derivative
GB2451865A (en) 2007-08-15 2009-02-18 Univ Liverpool Microporous polymers from alkynyl monomers
US20240087880A1 (en) * 2022-08-26 2024-03-14 Applied Materials, Inc. Systems and methods for depositing low-k dielectric films

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3415741B2 (en) * 1997-03-31 2003-06-09 東レ・ダウコーニング・シリコーン株式会社 Composition for forming electrically insulating thin film and method for forming electrically insulating thin film
IL143207A0 (en) * 1998-11-24 2002-04-21 Dow Chemical Co A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom
JP3483500B2 (en) * 1999-05-28 2004-01-06 富士通株式会社 Insulating film forming material, insulating film forming method, and semiconductor device
JP2001192539A (en) * 2000-01-13 2001-07-17 Jsr Corp Thermosetting resin composition, its cured item, and circuit board including the cured item
US6509415B1 (en) * 2000-04-07 2003-01-21 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
JP4651774B2 (en) * 2000-04-11 2011-03-16 新日鐵化学株式会社 Aromatic oligomer, phenol resin composition containing the same, epoxy resin composition and cured product thereof
JP2002003683A (en) * 2000-06-26 2002-01-09 Hitachi Chem Co Ltd Resin composition low in both hygroscopic property and birefringence and forming material, sheet of film and optical parts obtained from the resin composition
TW588072B (en) * 2000-10-10 2004-05-21 Shipley Co Llc Antireflective porogens
US20030006477A1 (en) * 2001-05-23 2003-01-09 Shipley Company, L.L.C. Porous materials
JP2003131001A (en) * 2001-05-25 2003-05-08 Shipley Co Llc Porous optical materials
US7049005B2 (en) * 2001-05-30 2006-05-23 Honeywell International Inc. Organic compositions

Also Published As

Publication number Publication date
JP2005516382A (en) 2005-06-02
KR20040104454A (en) 2004-12-10
EP1466356A2 (en) 2004-10-13
AU2003210504A8 (en) 2003-07-30
WO2003060979A2 (en) 2003-07-24
WO2003060979A3 (en) 2004-07-15
CN1643669A (en) 2005-07-20

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase