AU2002238422A1 - Method for producing semiconductor components - Google Patents

Method for producing semiconductor components

Info

Publication number
AU2002238422A1
AU2002238422A1 AU2002238422A AU2002238422A AU2002238422A1 AU 2002238422 A1 AU2002238422 A1 AU 2002238422A1 AU 2002238422 A AU2002238422 A AU 2002238422A AU 2002238422 A AU2002238422 A AU 2002238422A AU 2002238422 A1 AU2002238422 A1 AU 2002238422A1
Authority
AU
Australia
Prior art keywords
semiconductor components
producing semiconductor
producing
components
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002238422A
Inventor
Assadullah Alam
Armin Dadgar
Michael Heuken
Holger Jurgensen
Alois Krost
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2002238422A1 publication Critical patent/AU2002238422A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
AU2002238422A 2001-01-18 2001-12-12 Method for producing semiconductor components Abandoned AU2002238422A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10102315.4 2001-01-18
DE10102315A DE10102315B4 (en) 2001-01-18 2001-01-18 Method of fabricating semiconductor devices and intermediate in these methods
PCT/EP2001/014614 WO2002058163A2 (en) 2001-01-18 2001-12-12 Method for producing semiconductor components

Publications (1)

Publication Number Publication Date
AU2002238422A1 true AU2002238422A1 (en) 2002-07-30

Family

ID=7671092

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002238422A Abandoned AU2002238422A1 (en) 2001-01-18 2001-12-12 Method for producing semiconductor components

Country Status (3)

Country Link
AU (1) AU2002238422A1 (en)
DE (1) DE10102315B4 (en)
WO (1) WO2002058163A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8168000B2 (en) 2005-06-15 2012-05-01 International Rectifier Corporation III-nitride semiconductor device fabrication
KR101039970B1 (en) * 2010-02-11 2011-06-09 엘지이노텍 주식회사 Method for forming a semiconductor layer and fabricating light emitting device
DE102018111227A1 (en) * 2018-05-09 2019-11-14 Osram Opto Semiconductors Gmbh Method for cutting an epitaxially grown semiconductor body and semiconductor chip

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52135667A (en) * 1976-05-10 1977-11-12 Toshiba Corp Dicing method of semiconductor wafer
KR930008861B1 (en) * 1991-05-16 1993-09-16 재단법인 한국전자통신연구소 Manufacturing method of semicondcutor substrate having composite layer
JP2748354B2 (en) * 1993-10-21 1998-05-06 日亜化学工業株式会社 Method of manufacturing gallium nitride based compound semiconductor chip
JPH0864791A (en) * 1994-08-23 1996-03-08 Matsushita Electric Ind Co Ltd Epitaxial growth method
US5882988A (en) * 1995-08-16 1999-03-16 Philips Electronics North America Corporation Semiconductor chip-making without scribing
JPH10125629A (en) * 1996-10-17 1998-05-15 Nec Eng Ltd Method of cutting semiconductor wafer
DE19715572A1 (en) * 1997-04-15 1998-10-22 Telefunken Microelectron Selective epitaxy of III-V nitride semiconductor layers
KR20010021496A (en) * 1997-07-03 2001-03-15 추후제출 Elimination of defects in epitaxial films
DE19838810B4 (en) * 1998-08-26 2006-02-09 Osram Opto Semiconductors Gmbh Method for producing a plurality of Ga (In, Al) N light-emitting diode chips
US6143629A (en) * 1998-09-04 2000-11-07 Canon Kabushiki Kaisha Process for producing semiconductor substrate
JP3235586B2 (en) * 1999-02-25 2001-12-04 日本電気株式会社 Semiconductor device and method of manufacturing semiconductor device
JP2001015721A (en) * 1999-04-30 2001-01-19 Canon Inc Separation method of composite member and manufacture of thin film

Also Published As

Publication number Publication date
WO2002058163A2 (en) 2002-07-25
DE10102315A1 (en) 2002-07-25
WO2002058163A3 (en) 2002-12-12
DE10102315B4 (en) 2012-10-25
WO2002058163A8 (en) 2003-03-06

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase