AU2002214372A1 - Thin film resonator and method for manufacturing the same - Google Patents

Thin film resonator and method for manufacturing the same

Info

Publication number
AU2002214372A1
AU2002214372A1 AU2002214372A AU1437202A AU2002214372A1 AU 2002214372 A1 AU2002214372 A1 AU 2002214372A1 AU 2002214372 A AU2002214372 A AU 2002214372A AU 1437202 A AU1437202 A AU 1437202A AU 2002214372 A1 AU2002214372 A1 AU 2002214372A1
Authority
AU
Australia
Prior art keywords
manufacturing
same
thin film
film resonator
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002214372A
Inventor
Eon-Kyeong Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mems Solutions Inc
Original Assignee
Mems Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mems Solutions Inc filed Critical Mems Solutions Inc
Publication of AU2002214372A1 publication Critical patent/AU2002214372A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H2009/241—Bulk-mode MEMS resonators

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
AU2002214372A 2000-11-13 2001-11-07 Thin film resonator and method for manufacturing the same Abandoned AU2002214372A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2000-0067032A KR100473871B1 (en) 2000-11-13 2000-11-13 Thin film resonator
KR0067032 2000-11-13
PCT/KR2001/001894 WO2002039537A1 (en) 2000-11-13 2001-11-07 Thin film resonator and method for manufacturing the same

Publications (1)

Publication Number Publication Date
AU2002214372A1 true AU2002214372A1 (en) 2002-05-21

Family

ID=19698538

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002214372A Abandoned AU2002214372A1 (en) 2000-11-13 2001-11-07 Thin film resonator and method for manufacturing the same

Country Status (6)

Country Link
US (2) US6762471B2 (en)
JP (1) JP3867231B2 (en)
KR (1) KR100473871B1 (en)
CN (1) CN1249826C (en)
AU (1) AU2002214372A1 (en)
WO (1) WO2002039537A1 (en)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI242883B (en) * 2001-06-28 2005-11-01 Winbond Electronics Corp Manufacturing process of high-frequency thin-film bulk acoustic wave filter and apparatus thereof
JP2003017964A (en) * 2001-07-04 2003-01-17 Hitachi Ltd Manufacturing method for acoustic wave element
JP3944372B2 (en) * 2001-09-21 2007-07-11 株式会社東芝 Piezoelectric thin film vibrator and frequency variable resonator using the same
JP2003110016A (en) 2001-09-28 2003-04-11 Kobe Steel Ltd Method of forming aerial metal wiring on semiconductor substrate
TW540173B (en) * 2002-05-03 2003-07-01 Asia Pacific Microsystems Inc Bulk acoustic device having integrated fine-tuning and trimming devices
KR100506729B1 (en) * 2002-05-21 2005-08-08 삼성전기주식회사 Film bulk acoustic resonator and method for fabrication thereof
US7045381B1 (en) 2002-06-28 2006-05-16 Silicon Light Machines Corporation Conductive etch stop for etching a sacrificial layer
US6777258B1 (en) * 2002-06-28 2004-08-17 Silicon Light Machines, Inc. Conductive etch stop for etching a sacrificial layer
US6894360B2 (en) * 2002-07-30 2005-05-17 Agilent Technologies, Inc. Electrostatic discharge protection of thin-film resonators
US7312674B2 (en) 2002-08-06 2007-12-25 The Charles Stark Draper Laboratory, Inc. Resonator system with a plurality of individual mechanically coupled resonators and method of making same
KR100517841B1 (en) 2003-02-22 2005-09-30 주식회사 엠에스솔루션 FBAR band pass filter, Duplexer having the FBAR band pass filter and Methods for manufacturing the same
US7005236B2 (en) * 2003-04-23 2006-02-28 Taiwan Semiconductor Manufacturing Company Maintaining photoresist planarity at hole edges
KR100485702B1 (en) * 2003-05-29 2005-04-28 삼성전자주식회사 Film bulk acoustic resonator having support structure and method thereof
KR100558439B1 (en) * 2003-09-15 2006-03-10 삼성전기주식회사 FBAR of Wafer Level Pakage and manufacturing method thereof
US7057477B2 (en) * 2003-12-24 2006-06-06 Intel Corporation Integration of FBAR filter(s) and on-chip inductors
US20050148065A1 (en) * 2003-12-30 2005-07-07 Intel Corporation Biosensor utilizing a resonator having a functionalized surface
US7038559B2 (en) * 2004-02-23 2006-05-02 Ruby Richard C Vertically separated acoustic filters and resonators
JP2005311568A (en) * 2004-04-20 2005-11-04 Sony Corp Filter device and transceiver
JP2005311567A (en) * 2004-04-20 2005-11-04 Sony Corp Filter device and transceiver
JP4149416B2 (en) * 2004-05-31 2008-09-10 富士通メディアデバイス株式会社 Piezoelectric thin film resonator, filter, and manufacturing method thereof
JP2006135529A (en) * 2004-11-04 2006-05-25 Japan Radio Co Ltd Manufacturing method of thin-film resonator
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US7791434B2 (en) * 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
US7172921B2 (en) * 2005-01-03 2007-02-06 Miradia Inc. Method and structure for forming an integrated spatial light modulator
US8207004B2 (en) 2005-01-03 2012-06-26 Miradia Inc. Method and structure for forming a gyroscope and accelerometer
KR100692593B1 (en) * 2005-01-24 2007-03-13 삼성전자주식회사 Manufacturing method of mems structure
US20060274476A1 (en) * 2005-04-13 2006-12-07 Andrew Cervin-Lawry Low loss thin film capacitor and methods of manufacturing the same
JP5002815B2 (en) * 2005-06-04 2012-08-15 国立大学法人豊橋技術科学大学 Integrated device and manufacturing method thereof
US20070063777A1 (en) * 2005-08-26 2007-03-22 Mircea Capanu Electrostrictive devices
US20070093229A1 (en) * 2005-10-20 2007-04-26 Takehiko Yamakawa Complex RF device and method for manufacturing the same
US7732241B2 (en) * 2005-11-30 2010-06-08 Semiconductor Energy Labortory Co., Ltd. Microstructure and manufacturing method thereof and microelectromechanical system
JP4707574B2 (en) * 2006-02-02 2011-06-22 太陽誘電株式会社 Piezoelectric thin film resonator, filter and manufacturing method thereof
DE102006047761A1 (en) * 2006-10-06 2008-04-10 Infineon Technologies Ag Semiconductor component and method for its production
KR100856391B1 (en) * 2006-12-06 2008-09-04 한국전자통신연구원 Method for manufacturing floating structure of microelectromechanical systme
KR100779016B1 (en) * 2006-12-15 2007-11-22 동부일렉트로닉스 주식회사 Semiconductor device and fabricating method thereof
US8562770B2 (en) 2008-05-21 2013-10-22 Manufacturing Resources International, Inc. Frame seal methods for LCD
US8089195B2 (en) * 2007-12-17 2012-01-03 Resonance Semiconductor Corporation Integrated acoustic bandgap devices for energy confinement and methods of fabricating same
US8278802B1 (en) * 2008-04-24 2012-10-02 Rf Micro Devices, Inc. Planarized sacrificial layer for MEMS fabrication
US9573346B2 (en) 2008-05-21 2017-02-21 Manufacturing Resources International, Inc. Photoinitiated optical adhesive and method for using same
US9154107B2 (en) 2009-05-28 2015-10-06 Northrop Grumman Systems Corporation Lateral over-moded bulk acoustic resonators
US8248185B2 (en) * 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US9673778B2 (en) 2009-06-24 2017-06-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Solid mount bulk acoustic wave resonator structure comprising a bridge
US9520856B2 (en) 2009-06-24 2016-12-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US8902023B2 (en) * 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US9450561B2 (en) 2009-11-25 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with varying amounts of dopant
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US9197185B2 (en) 2010-04-29 2015-11-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Resonator device including electrodes with buried temperature compensating layers
US9479139B2 (en) 2010-04-29 2016-10-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Resonator device including electrode with buried temperature compensating layer
JP5187597B2 (en) * 2010-07-05 2013-04-24 株式会社村田製作所 Elastic wave element
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US9099983B2 (en) 2011-02-28 2015-08-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
US8704428B2 (en) 2011-04-20 2014-04-22 Qualcomm Mems Technologies, Inc. Widening resonator bandwidth using mechanical loading
US8350445B1 (en) 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
US8922302B2 (en) * 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
US9105751B2 (en) 2011-11-11 2015-08-11 International Business Machines Corporation Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure
US9154103B2 (en) 2012-01-30 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator
US9667220B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising heater and sense resistors
US9608592B2 (en) 2014-01-21 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic wave resonator (FBAR) having stress-relief
US9667218B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising feedback circuit
DE102012215774A1 (en) * 2012-09-06 2014-03-06 Robert Bosch Gmbh Piezoelectric actuator
KR20170122539A (en) * 2016-04-27 2017-11-06 삼성전기주식회사 Bulk acoustic wave resonator and method for manufacturing the same
US11558031B2 (en) 2017-03-08 2023-01-17 Samsung Electro-Mechanics Co., Ltd. Film bulk acoustic resonator and method of manufacturing the same
KR102369436B1 (en) * 2017-04-19 2022-03-03 삼성전기주식회사 Bulk acoustic wave resonator
KR101942734B1 (en) 2017-05-18 2019-01-28 삼성전기 주식회사 Bulk-acoustic wave resonator
JP6909059B2 (en) * 2017-06-07 2021-07-28 太陽誘電株式会社 Piezoelectric thin film resonators, filters and multiplexers
CN108363950A (en) * 2018-01-08 2018-08-03 杭州士兰微电子股份有限公司 Ultrasonic fingerprint sensor and its manufacturing method
CN110166014B (en) * 2018-02-11 2020-09-08 诺思(天津)微系统有限责任公司 Bulk acoustic wave resonator and method for manufacturing the same
CN111342799B (en) * 2018-12-18 2023-12-15 天津大学 Bulk acoustic resonator with enlarged release channel, filter, electronic device
CN111384907B (en) * 2018-12-29 2023-07-18 开元通信技术（厦门）有限公司 Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer
CN110661067B (en) * 2019-09-12 2021-02-26 天津大学 Band-pass filter of dielectric integrated suspension line based on 5G double-frequency
CN112260659B (en) * 2020-10-26 2022-02-01 武汉大学 high-Q-value film bulk acoustic resonator and preparation method thereof
CN113566982B (en) * 2021-07-12 2022-05-24 北京北方高业科技有限公司 Infrared detector with microbridge structure
CN113852357B (en) * 2021-11-26 2022-02-18 深圳新声半导体有限公司 Film bulk acoustic resonator structure and manufacturing method thereof
CN114157259B (en) * 2022-02-10 2022-05-20 深圳新声半导体有限公司 Manufacturing method based on bandwidth-enhanced FBAR filter

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189307A (en) * 1984-03-09 1985-09-26 Toshiba Corp Piezoelectric thin film resonator and its manufacture
JPH0316311A (en) * 1989-03-30 1991-01-24 Canon Inc Surface acoustic wave element and manufacture thereof
US5449953A (en) * 1990-09-14 1995-09-12 Westinghouse Electric Corporation Monolithic microwave integrated circuit on high resistivity silicon
JPH06326540A (en) * 1993-05-17 1994-11-25 Murata Mfg Co Ltd Production of piezo-electric element
SE506303C2 (en) * 1995-06-13 1997-12-01 Ericsson Telefon Ab L M Device and method of tunable devices
US5696423A (en) * 1995-06-29 1997-12-09 Motorola, Inc. Temperature compenated resonator and method
JP3331967B2 (en) * 1998-06-02 2002-10-07 松下電器産業株式会社 Millimeter wave module
JP2000307376A (en) * 1999-04-16 2000-11-02 Takaya Watanabe Crystal vibrator
JP3468163B2 (en) * 1999-07-05 2003-11-17 株式会社村田製作所 Support structure for piezoelectric resonator, electronic component, ladder filter, and communication device
KR20010026587A (en) * 1999-09-07 2001-04-06 구자홍 micromachined tunable filter and production method
US6441539B1 (en) * 1999-11-11 2002-08-27 Murata Manufacturing Co., Ltd. Piezoelectric resonator
KR100379440B1 (en) * 2000-02-16 2003-04-10 엘지전자 주식회사 method for fabricating of microwave resonator
US6355498B1 (en) * 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
US6710681B2 (en) * 2001-07-13 2004-03-23 Agilent Technologies, Inc. Thin film bulk acoustic resonator (FBAR) and inductor on a monolithic substrate and method of fabricating the same

Also Published As

Publication number Publication date
JP3867231B2 (en) 2007-01-10
US6849475B2 (en) 2005-02-01
CN1395752A (en) 2003-02-05
CN1249826C (en) 2006-04-05
US20040026755A1 (en) 2004-02-12
US6762471B2 (en) 2004-07-13
KR20020037070A (en) 2002-05-18
WO2002039537A1 (en) 2002-05-16
US20030030118A1 (en) 2003-02-13
JP2004514313A (en) 2004-05-13
KR100473871B1 (en) 2005-03-08

Similar Documents

Publication Publication Date Title
AU2002214372A1 (en) Thin film resonator and method for manufacturing the same
AU2001256755A1 (en) Biosensor and method for manufacturing the same
AU5104700A (en) Thermoelectric material and method for manufacturing the same
AU2002221122A1 (en) Thin film forming method and thin film forming device
AU2002213831A1 (en) Actuating member and method for producing the same
EP1292970A4 (en) Thin film forming method
AU2001292352A1 (en) Film with multilayered metal and process for producing the same
AUPR158300A0 (en) Method for forming perforations in film
AU2001294176A1 (en) Honeycomb filter and method for manufacturing the same
EP1124271B8 (en) Magnetic sensor and method for fabricating the same
AU2001241144A1 (en) Substrate with photocatalytic film and method for producing the same
AU2002245115A1 (en) Monolithic part and process for making the same
SG115478A1 (en) Thin film transistor and method for manufacturing the same
AU2002329723A1 (en) Multiple polarization combiner-splitter-isolator and method of manufacturing the same
AU5317200A (en) Method for fabricating an electron-emissive film
AU1262699A (en) Stage device and method of manufacturing the same, and aligner and method of manufacturing the same
AU3876399A (en) Waders and the method for manufacturing them
EP1318581A1 (en) Semiconductor laser device and method for manufacturing the same
AU4112401A (en) Hydrophilic member and method for manufacture thereof
EP1179436A3 (en) Laminating film and laminating method using it
EP1052687A4 (en) Soi substrate and method for manufacturing the same
AU2002306649A1 (en) A method for making thick and/or thin film
AU2001253651A1 (en) Dielectric films and related method
EP1253684A3 (en) Wiring material and method for manufacturing the same
AU2003241913A1 (en) Porous nanocomposite thin film and method of forming the same