AU2002211705A1 - Sputter targets - Google Patents

Sputter targets

Info

Publication number
AU2002211705A1
AU2002211705A1 AU2002211705A AU1170502A AU2002211705A1 AU 2002211705 A1 AU2002211705 A1 AU 2002211705A1 AU 2002211705 A AU2002211705 A AU 2002211705A AU 1170502 A AU1170502 A AU 1170502A AU 2002211705 A1 AU2002211705 A1 AU 2002211705A1
Authority
AU
Australia
Prior art keywords
sputter targets
sputter
targets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002211705A
Inventor
Jane Buehler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of AU2002211705A1 publication Critical patent/AU2002211705A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y10T29/49885—Assembling or joining with coating before or during assembling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y10T29/49885—Assembling or joining with coating before or during assembling
    • Y10T29/49886—Assembling or joining with coating before or during assembling to roughen surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24777—Edge feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2002211705A 2000-10-13 2001-10-11 Sputter targets Abandoned AU2002211705A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/687,947 2000-10-13
US09/687,947 US6503380B1 (en) 2000-10-13 2000-10-13 Physical vapor target constructions
PCT/US2001/032018 WO2002031217A2 (en) 2000-10-13 2001-10-11 Sputter targets

Publications (1)

Publication Number Publication Date
AU2002211705A1 true AU2002211705A1 (en) 2002-04-22

Family

ID=24762492

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002211705A Abandoned AU2002211705A1 (en) 2000-10-13 2001-10-11 Sputter targets

Country Status (8)

Country Link
US (2) US6503380B1 (en)
EP (1) EP1330557A2 (en)
JP (1) JP2004511656A (en)
KR (1) KR20030038816A (en)
CN (1) CN1582343A (en)
AU (1) AU2002211705A1 (en)
TW (1) TW552311B (en)
WO (1) WO2002031217A2 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6673220B2 (en) * 2001-05-21 2004-01-06 Sharp Laboratories Of America, Inc. System and method for fabricating silicon targets
TWI269815B (en) * 2002-05-20 2007-01-01 Tosoh Smd Inc Replaceable target sidewall insert with texturing
US20040206804A1 (en) * 2002-07-16 2004-10-21 Jaeyeon Kim Traps for particle entrapment in deposition chambers
US6955748B2 (en) * 2002-07-16 2005-10-18 Honeywell International Inc. PVD target constructions comprising projections
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
JP2004328378A (en) * 2003-04-24 2004-11-18 Konica Minolta Opto Inc Digital camera
EP1666630A4 (en) * 2003-09-12 2012-06-27 Jx Nippon Mining & Metals Corp Sputtering target and method for finishing surface of such target
US20070068796A1 (en) * 2005-09-26 2007-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of using a target having end of service life detection capability
US7891536B2 (en) 2005-09-26 2011-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target with end of service life detection capability
US8795486B2 (en) * 2005-09-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. PVD target with end of service life detection capability
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US20080067058A1 (en) * 2006-09-15 2008-03-20 Stimson Bradley O Monolithic target for flat panel application
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof
EP2554710B1 (en) * 2010-03-29 2017-02-22 JX Nippon Mining & Metals Corporation Tantalum coil for sputtering and method for processing the coil
WO2014142737A1 (en) * 2013-03-13 2014-09-18 Ulf Helmersson Arrangement and method for high power pulsed magnetron sputtering
KR102389342B1 (en) * 2015-05-21 2022-04-22 제이엑스금속주식회사 Sputtering target
SG11201807455XA (en) * 2016-03-09 2018-09-27 Jx Nippon Mining & Metals Corp Sputtering target capable of stabilizing ignition
CN107541706A (en) * 2016-06-29 2018-01-05 宁波江丰电子材料股份有限公司 Knurled wheel and rose work method
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
JP7310395B2 (en) * 2019-07-17 2023-07-19 住友金属鉱山株式会社 Sputtering target and manufacturing method thereof

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1181223A (en) 1966-06-06 1970-02-11 T K S Aircraft De Icing Ltd Improvements relating to Liquid Flow Proportioning Devices
US3630881A (en) 1970-01-22 1971-12-28 Ibm Cathode-target assembly for rf sputtering apparatus
DE2307649B2 (en) 1973-02-16 1980-07-31 Robert Bosch Gmbh, 7000 Stuttgart Arrangement for sputtering different materials on a substrate
US3895635A (en) * 1973-06-20 1975-07-22 Ndm Corp Electrosurgical grounding cable assembly
DE3335623A1 (en) 1983-09-30 1985-04-11 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING A CARBON-CONTAINING LAYER, CARBON-CONTAINING LAYER, USE OF A CARBON-CONTAINING LAYER, AND APPARATUS FOR CARRYING OUT A CARBON-PRODUCTING METHOD
US4855033A (en) 1986-04-04 1989-08-08 Materials Research Corporation Cathode and target design for a sputter coating apparatus
AU8629491A (en) * 1990-08-30 1992-03-30 Materials Research Corporation Pretextured cathode sputtering target and method of preparation thereof and sputtering therewith
AU1151592A (en) 1991-01-28 1992-08-27 Materials Research Corporation Target for cathode sputtering
DE59208623D1 (en) 1991-05-08 1997-07-24 Balzers Hochvakuum Method for assembling or disassembling a target plate in a vacuum process room, assembly arrangement therefor and target plate or vacuum chamber
US5282943A (en) * 1992-06-10 1994-02-01 Tosoh Smd, Inc. Method of bonding a titanium containing sputter target to a backing plate and bonded target/backing plate assemblies produced thereby
DE69330702T2 (en) 1992-10-05 2002-07-11 Canon Kk Process for the production of an optical storage medium, atomization method
JP2720755B2 (en) * 1993-04-23 1998-03-04 三菱マテリアル株式会社 Ti target material for magnetron sputtering
EP0625792B1 (en) 1993-05-19 1997-05-28 Applied Materials, Inc. Apparatus and process for increasing uniformity of sputtering rate in sputtering apparatus
JP3744964B2 (en) 1995-04-06 2006-02-15 株式会社アルバック Component for film forming apparatus and method for manufacturing the same
JP3852967B2 (en) 1995-07-14 2006-12-06 株式会社アルバック Low pressure sputtering equipment
US5658442A (en) 1996-03-07 1997-08-19 Applied Materials, Inc. Target and dark space shield for a physical vapor deposition system
EP0954620A4 (en) 1997-01-16 2002-01-02 Bottomfield Layne F Vapor deposition components and corresponding methods
US6162297A (en) 1997-09-05 2000-12-19 Applied Materials, Inc. Embossed semiconductor fabrication parts
US6086735A (en) 1998-06-01 2000-07-11 Praxair S.T. Technology, Inc. Contoured sputtering target
DE19953275A1 (en) 1999-11-05 2001-05-10 Cognis Deutschland Gmbh Emulsifiers
JP2001316798A (en) 2000-05-09 2001-11-16 Toshiba Corp Target device and sputtering system using it

Also Published As

Publication number Publication date
KR20030038816A (en) 2003-05-16
TW552311B (en) 2003-09-11
WO2002031217A2 (en) 2002-04-18
WO2002031217B1 (en) 2003-03-13
EP1330557A2 (en) 2003-07-30
CN1582343A (en) 2005-02-16
US6971151B2 (en) 2005-12-06
US20020079217A1 (en) 2002-06-27
WO2002031217A3 (en) 2002-10-03
JP2004511656A (en) 2004-04-15
US6503380B1 (en) 2003-01-07

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