AU2001288946A1 - Photoresist composition - Google Patents

Photoresist composition

Info

Publication number
AU2001288946A1
AU2001288946A1 AU2001288946A AU8894601A AU2001288946A1 AU 2001288946 A1 AU2001288946 A1 AU 2001288946A1 AU 2001288946 A AU2001288946 A AU 2001288946A AU 8894601 A AU8894601 A AU 8894601A AU 2001288946 A1 AU2001288946 A1 AU 2001288946A1
Authority
AU
Australia
Prior art keywords
photoresist composition
photoresist
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001288946A
Inventor
Anthony Zampini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of AU2001288946A1 publication Critical patent/AU2001288946A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2989—Microcapsule with solid core [includes liposome]

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
AU2001288946A 2000-09-11 2001-09-08 Photoresist composition Abandoned AU2001288946A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23164000P 2000-09-11 2000-09-11
US60/231,640 2000-09-11
US23465200P 2000-09-22 2000-09-22
US60/234,652 2000-09-22
PCT/US2001/028195 WO2002023274A2 (en) 2000-09-11 2001-09-08 Photoresist composition

Publications (1)

Publication Number Publication Date
AU2001288946A1 true AU2001288946A1 (en) 2002-03-26

Family

ID=26925299

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001288946A Abandoned AU2001288946A1 (en) 2000-09-11 2001-09-08 Photoresist composition

Country Status (4)

Country Link
US (1) US6645695B2 (en)
KR (1) KR20030097782A (en)
AU (1) AU2001288946A1 (en)
WO (1) WO2002023274A2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3914386B2 (en) * 2000-12-28 2007-05-16 株式会社ルネサステクノロジ Photomask, manufacturing method thereof, pattern forming method, and manufacturing method of semiconductor device
US7833690B2 (en) * 2001-11-05 2010-11-16 The University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
JP3992550B2 (en) * 2002-07-04 2007-10-17 國宏 市村 Active energy ray resin composition, active energy ray resin film, and pattern forming method using the film
US7316844B2 (en) 2004-01-16 2008-01-08 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
WO2006052285A2 (en) * 2004-05-13 2006-05-18 The Trustees Of Columbia University In The City Of New York Polymeric nanoparticles and nanogels for extraction and release of compounds
WO2005116768A1 (en) * 2004-05-31 2005-12-08 Tokyo Ohka Kogyo Co., Ltd. Positive resist compositions and process for the formation of resist patterns with the same
US20060166132A1 (en) * 2005-01-27 2006-07-27 Meagley Robert P Ultraviolet light transparent nanoparticles for photoresists
EP1720072B1 (en) * 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
US7695890B2 (en) * 2005-09-09 2010-04-13 Brewer Science Inc. Negative photoresist for silicon KOH etch without silicon nitride
TWI375130B (en) * 2006-10-30 2012-10-21 Rohm & Haas Elect Mat Compositions and processes for immersion lithography
US7709178B2 (en) 2007-04-17 2010-05-04 Brewer Science Inc. Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
CN101802711B (en) * 2007-07-30 2014-12-03 布鲁尔科技公司 Non-covalently crosslinkable materials for photolithography processes
US8192642B2 (en) * 2007-09-13 2012-06-05 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
TWI407262B (en) 2007-11-05 2013-09-01 羅門哈斯電子材料有限公司 Compositions and processes for immersion lithography
US8017194B2 (en) * 2008-01-17 2011-09-13 International Business Machines Corporation Method and material for a thermally crosslinkable random copolymer
US8685616B2 (en) * 2008-06-10 2014-04-01 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
JP2011018636A (en) * 2009-06-09 2011-01-27 Fujifilm Corp Conductive composition, as well as transparent conductive film, display element, and accumulated type solar cell
CN111065967B (en) * 2017-09-29 2023-06-23 日本瑞翁株式会社 Positive resist composition, method for forming resist film, and method for producing laminate
WO2020039975A1 (en) * 2018-08-23 2020-02-27 富士フイルム株式会社 Water-developable flexo printing plate original plate, flexo printing plate, and photosensitive resin composition
RU2747130C1 (en) * 2020-07-06 2021-04-28 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет ИТМО" (Университет ИТМО) Liquid composition for photopolymerizable film for optical recording, composition and production method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4876172A (en) * 1987-05-20 1989-10-24 The Mead Corporation Imaging method employing photoadhesive microparticles
US4910115A (en) * 1988-11-21 1990-03-20 The Mead Corporation Light-sensitive polymerizable compositions containing silver compounds
US5942367A (en) 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
JP3695024B2 (en) 1996-11-14 2005-09-14 Ｊｓｒ株式会社 Radiation sensitive resin composition for semiconductor device manufacturing
TW574629B (en) 1997-02-28 2004-02-01 Shinetsu Chemical Co Polystyrene derivative chemically amplified positive resist compositions, and patterning method
US6136502A (en) 1997-10-08 2000-10-24 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
TWI250379B (en) 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
ATE486301T1 (en) 2000-08-21 2010-11-15 Tokyo Ohka Kogyo Co Ltd CROSS-LINKED POSITIVE PHOTORESIST COMPOSITION

Also Published As

Publication number Publication date
WO2002023274A9 (en) 2003-11-13
US20020051928A1 (en) 2002-05-02
US6645695B2 (en) 2003-11-11
KR20030097782A (en) 2003-12-31
WO2002023274A3 (en) 2003-01-30
WO2002023274A2 (en) 2002-03-21

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