AU2001232165A1 - Capacitive pressure-responsive devices and their fabrication - Google Patents

Capacitive pressure-responsive devices and their fabrication

Info

Publication number
AU2001232165A1
AU2001232165A1 AU2001232165A AU3216501A AU2001232165A1 AU 2001232165 A1 AU2001232165 A1 AU 2001232165A1 AU 2001232165 A AU2001232165 A AU 2001232165A AU 3216501 A AU3216501 A AU 3216501A AU 2001232165 A1 AU2001232165 A1 AU 2001232165A1
Authority
AU
Australia
Prior art keywords
fabrication
capacitive pressure
responsive devices
responsive
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001232165A
Inventor
Stavros Emmanuel Chatzandroulis
Dimitrios Mattheos Goustouridis
Pascal Jean Michel Normand
Dimitris Konstantin Tsoukalas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Center For Scientific Research "demokrit Os Institute Of Microelectronics
Original Assignee
NAT CT SCIENT RES DEMOKRITOS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP00600002A external-priority patent/EP1128175A1/en
Priority claimed from GR20010100079A external-priority patent/GR20010100079A/en
Application filed by NAT CT SCIENT RES DEMOKRITOS filed Critical NAT CT SCIENT RES DEMOKRITOS
Publication of AU2001232165A1 publication Critical patent/AU2001232165A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
    • G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
AU2001232165A 2000-02-23 2001-02-19 Capacitive pressure-responsive devices and their fabrication Abandoned AU2001232165A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP00600002 2000-02-23
EP00600002A EP1128175A1 (en) 2000-02-23 2000-02-23 Long-term stable capacitive pressure sensor made with self-aligned process
GR20010100079A GR20010100079A (en) 2001-02-13 2001-02-13 Capacity pressure-responsive devices and their fabrication
GR20010100079 2001-02-13
PCT/IB2001/000208 WO2001063645A2 (en) 2000-02-23 2001-02-19 Capacitive pressure-responsive devices and their fabrication

Publications (1)

Publication Number Publication Date
AU2001232165A1 true AU2001232165A1 (en) 2001-09-03

Family

ID=42320031

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001232165A Abandoned AU2001232165A1 (en) 2000-02-23 2001-02-19 Capacitive pressure-responsive devices and their fabrication

Country Status (5)

Country Link
US (1) US6704185B2 (en)
EP (1) EP1259976A2 (en)
AU (1) AU2001232165A1 (en)
IL (2) IL151277A0 (en)
WO (1) WO2001063645A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
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US6945116B2 (en) * 2003-03-19 2005-09-20 California Institute Of Technology Integrated capacitive microfluidic sensors method and apparatus
JP4333417B2 (en) * 2003-04-02 2009-09-16 ソニー株式会社 Micromachine manufacturing method
US7560788B2 (en) * 2004-09-20 2009-07-14 General Electric Company Microelectromechanical system pressure sensor and method for making and using
US20060276008A1 (en) * 2005-06-02 2006-12-07 Vesa-Pekka Lempinen Thinning
US8968204B2 (en) * 2006-06-12 2015-03-03 Transonic Systems, Inc. System and method of perivascular pressure and flow measurement
US7482215B2 (en) 2006-08-30 2009-01-27 International Business Machines Corporation Self-aligned dual segment liner and method of manufacturing the same
TW200951597A (en) * 2008-06-10 2009-12-16 Ind Tech Res Inst Functional device array with self-aligned electrode structures and fabrication methods thereof
US8723276B2 (en) * 2008-09-11 2014-05-13 Infineon Technologies Ag Semiconductor structure with lamella defined by singulation trench
US7832279B2 (en) 2008-09-11 2010-11-16 Infineon Technologies Ag Semiconductor device including a pressure sensor
US8471346B2 (en) * 2009-02-27 2013-06-25 Infineon Technologies Ag Semiconductor device including a cavity
US8518732B2 (en) 2010-12-22 2013-08-27 Infineon Technologies Ag Method of providing a semiconductor structure with forming a sacrificial structure
JP6176609B2 (en) * 2013-08-21 2017-08-09 パナソニックＩｐマネジメント株式会社 Semiconductor physical quantity sensor
EP3367082A1 (en) * 2013-11-06 2018-08-29 Invensense, Inc. Pressure sensor
US10548492B2 (en) * 2016-12-08 2020-02-04 MEAS Switzerland S.a.r.l. Pressure sensor
US10823631B2 (en) 2018-04-18 2020-11-03 Rosemount Aerospace Inc. High temperature capacitive MEMS pressure sensor
US11225409B2 (en) 2018-09-17 2022-01-18 Invensense, Inc. Sensor with integrated heater
CN113785178A (en) 2019-05-17 2021-12-10 应美盛股份有限公司 Pressure sensor with improved gas tightness
CN113232031A (en) * 2021-01-20 2021-08-10 北京航空航天大学 Novel electronic skin with adjustable pressure sensing range
CN114608728A (en) * 2022-03-10 2022-06-10 苏州敏芯微电子技术股份有限公司 Capacitive pressure sensor and preparation method thereof

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US4203128A (en) 1976-11-08 1980-05-13 Wisconsin Alumni Research Foundation Electrostatically deformable thin silicon membranes
DE3310643C2 (en) * 1983-03-24 1986-04-10 Karlheinz Dr. 7801 Schallstadt Ziegler Pressure sensor
CH662181A5 (en) * 1983-09-16 1987-09-15 Mettler Instrumente Ag POWER KNIFE.
US4586109A (en) 1985-04-01 1986-04-29 Bourns Instruments, Inc. Batch-process silicon capacitive pressure sensor
US5207103A (en) 1987-06-01 1993-05-04 Wise Kensall D Ultraminiature single-crystal sensor with movable member
US4960177A (en) 1988-06-03 1990-10-02 University Of Hawaii Silicon membrane micro-scale
US5157973A (en) * 1989-03-16 1992-10-27 Process Automation Business, Inc. Pressure sensor with integral overpressure protection
DE4004179A1 (en) 1990-02-12 1991-08-14 Fraunhofer Ges Forschung INTEGRATABLE, CAPACITIVE PRESSURE SENSOR AND METHOD FOR PRODUCING THE SAME
JPH043929A (en) * 1990-04-20 1992-01-08 Sony Corp Method of etching silicon material layer
US5220838A (en) * 1991-03-28 1993-06-22 The Foxboro Company Overpressure-protected, differential pressure sensor and method of making the same
FR2700003B1 (en) 1992-12-28 1995-02-10 Commissariat Energie Atomique Method for manufacturing a pressure sensor using silicon on insulator technology and sensor obtained.
CH688745A5 (en) 1993-06-25 1998-02-13 Suisse Electronique Microtech differential pressure sensor of capacitive type.
US5744725A (en) * 1994-04-18 1998-04-28 Motorola Inc. Capacitive pressure sensor and method of fabricating same
US5578843A (en) 1994-10-06 1996-11-26 Kavlico Corporation Semiconductor sensor with a fusion bonded flexible structure
US5706565A (en) 1996-09-03 1998-01-13 Delco Electronics Corporation Method for making an all-silicon capacitive pressure sensor
JPH10111203A (en) 1996-10-08 1998-04-28 Fujikura Ltd Capacitive semiconductor sensor and its production
US6109113A (en) * 1998-06-11 2000-08-29 Delco Electronics Corp. Silicon micromachined capacitive pressure sensor and method of manufacture
WO2000002028A1 (en) * 1998-07-07 2000-01-13 The Goodyear Tire & Rubber Company Method of fabricating silicon capacitive sensor

Also Published As

Publication number Publication date
US6704185B2 (en) 2004-03-09
WO2001063645A3 (en) 2002-01-31
IL151277A (en) 2006-08-01
US20030107868A1 (en) 2003-06-12
WO2001063645A2 (en) 2001-08-30
EP1259976A2 (en) 2002-11-27
IL151277A0 (en) 2003-04-10

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