AU2001230982A1 - Wafer bonding techniques to minimize built-in stress of silicon microstructures and micro-mirrors - Google Patents
Wafer bonding techniques to minimize built-in stress of silicon microstructures and micro-mirrorsInfo
- Publication number
- AU2001230982A1 AU2001230982A1 AU2001230982A AU3098201A AU2001230982A1 AU 2001230982 A1 AU2001230982 A1 AU 2001230982A1 AU 2001230982 A AU2001230982 A AU 2001230982A AU 3098201 A AU3098201 A AU 3098201A AU 2001230982 A1 AU2001230982 A1 AU 2001230982A1
- Authority
- AU
- Australia
- Prior art keywords
- mirrors
- micro
- stress
- wafer bonding
- bonding techniques
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17632500P | 2000-01-18 | 2000-01-18 | |
US60/176,325 | 2000-01-18 | ||
US71591600A | 2000-11-16 | 2000-11-16 | |
US09/715,916 | 2000-11-16 | ||
PCT/US2001/001758 WO2001054176A1 (en) | 2000-01-18 | 2001-01-18 | Wafer bonding techniques to minimize built-in stress of silicon microstructures and micro-mirrors |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001230982A1 true AU2001230982A1 (en) | 2001-07-31 |
Family
ID=26872109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001230982A Abandoned AU2001230982A1 (en) | 2000-01-18 | 2001-01-18 | Wafer bonding techniques to minimize built-in stress of silicon microstructures and micro-mirrors |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1254479A1 (en) |
AU (1) | AU2001230982A1 (en) |
CA (1) | CA2397760A1 (en) |
WO (1) | WO2001054176A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100549866B1 (en) * | 2001-08-22 | 2006-02-08 | 고려대학교 산학협력단 | Pharmaceutic ingredient for medical treatment and prevention of cancer |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4580568A (en) | 1984-10-01 | 1986-04-08 | Cook, Incorporated | Percutaneous endovascular stent and method for insertion thereof |
NL8501773A (en) * | 1985-06-20 | 1987-01-16 | Philips Nv | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES |
US4902508A (en) | 1988-07-11 | 1990-02-20 | Purdue Research Foundation | Tissue graft composition |
JPH05136014A (en) * | 1991-11-15 | 1993-06-01 | Sumitomo Metal Mining Co Ltd | Manufacture of laminated soi substrate |
JPH0774329A (en) * | 1993-09-06 | 1995-03-17 | Toshiba Corp | Semiconductor device |
US5629790A (en) * | 1993-10-18 | 1997-05-13 | Neukermans; Armand P. | Micromachined torsional scanner |
US5597410A (en) * | 1994-09-15 | 1997-01-28 | Yen; Yung C. | Method to make a SOI wafer for IC manufacturing |
US5554389A (en) | 1995-04-07 | 1996-09-10 | Purdue Research Foundation | Urinary bladder submucosa derived tissue graft |
US5733337A (en) | 1995-04-07 | 1998-03-31 | Organogenesis, Inc. | Tissue repair fabric |
US5755791A (en) | 1996-04-05 | 1998-05-26 | Purdue Research Foundation | Perforated submucosal tissue graft constructs |
AU742457B2 (en) | 1996-08-23 | 2002-01-03 | Cook Biotech, Incorporated | Graft prosthesis, materials and methods |
US6099567A (en) | 1996-12-10 | 2000-08-08 | Purdue Research Foundation | Stomach submucosa derived tissue graft |
AU732726B2 (en) | 1996-12-10 | 2001-04-26 | Purdue Research Foundation | Biomaterial derived from vertebrate liver tissue |
EP0946872A1 (en) | 1996-12-10 | 1999-10-06 | Purdue Research Foundation | Gastric submucosal tissue as a novel diagnosis tool |
-
2001
- 2001-01-18 CA CA002397760A patent/CA2397760A1/en not_active Abandoned
- 2001-01-18 AU AU2001230982A patent/AU2001230982A1/en not_active Abandoned
- 2001-01-18 EP EP01903124A patent/EP1254479A1/en not_active Withdrawn
- 2001-01-18 WO PCT/US2001/001758 patent/WO2001054176A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CA2397760A1 (en) | 2001-07-26 |
WO2001054176A1 (en) | 2001-07-26 |
WO2001054176A9 (en) | 2003-01-16 |
EP1254479A1 (en) | 2002-11-06 |
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