Tao et al., 2011 - Google Patents

Geometry pattern for the wire organic electrochemical textile transistor

Tao et al., 2011

Document ID
5843889116456489177
Author
Tao X
Koncar V
Dufour C
Publication year
Publication venue
Journal of the Electrochemical Society

External Links

Snippet

Polyelectrolytes are promising materials as gate dielectrics in organic electrochemical transistor. On the other side, the fibre form transistor has become one of the most interesting topics in the field of smart textiles. The use of PEDOT: PSS to realize a parallel wire …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/549—Material technologies organic PV cells
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor

Similar Documents

Publication Publication Date Title
Tao et al. Geometry pattern for the wire organic electrochemical textile transistor
Heo et al. Recent progress of textile‐based wearable electronics: a comprehensive review of materials, devices, and applications
Xu et al. Electric-double-layer-gated transistors based on two-dimensional crystals: recent approaches and advances
Kim et al. Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength
Demirezen Frequency-and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature
Barquinha et al. Flexible and transparent WO 3 transistor with electrical and optical modulation
JP6191986B2 (en) Variable electric conduction element using all-solid electric double layer and electronic device using the same
Cai et al. Present status of electric-double-layer thin-film transistors and their applications
Landi et al. Evidence of bipolar resistive switching memory in perovskite solar cell
Gupta et al. Investigation of hysteresis in hole transport layer free metal halide perovskites cells under dark conditions
Wu et al. Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates
Li et al. Enhancement-mode field-effect transistors based on Ti-doped In2O3 nanowires fabricated by electrospinning
Torto et al. Model of organic solar cell photocurrent including the effect of charge accumulation at interfaces and non-uniform carrier generation
Chakraborty et al. Effect of single walled carbon nanotubes on series resistance of Rose Bengal and Methyl Red dye-based organic photovoltaic device
Sahu et al. Bipolar resistive switching in HoCrO3 thin films
Wang et al. Electroactive polymer actuator based on PVDF and graphene through electrospinning
Shen et al. Bipolar resistive switching of Pt/Ga2O3− x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios
Suzuki et al. Effect of the MIS structure with MgF2 on CELIV measurements
Nakamura et al. Discrimination between gate-induced electrostatic and electrochemical characteristics in insulator-to-metal transition of manganite thin films
Kumar et al. Rapid cleanroom-free fabrication of thread based transistors using three-dimensional stencil-based patterning
Zhang et al. Electrochemical metallization and trapping/detrapping resistive switching mechanism in Al/VOx/Cu RRAM
Liu et al. Optically-controlled resistive switching effects of CdS nanowire memtransistor
Ciobotaru et al. Charge transport mechanisms in free-standing devices with electrospun electrodes
Wing et al. Schottky barrier height switching in thin metal oxide films studied in diode and solar cell device configurations
Xia et al. Enhancing nonvolatile write-once-read-many-times memory effects with SiO2 nanoparticles sandwiched by poly (N-vinylcarbazole) layers