ZA201304612B - Cmos based micro-photonic systems - Google Patents

Cmos based micro-photonic systems

Info

Publication number
ZA201304612B
ZA201304612B ZA2013/04612A ZA201304612A ZA201304612B ZA 201304612 B ZA201304612 B ZA 201304612B ZA 2013/04612 A ZA2013/04612 A ZA 2013/04612A ZA 201304612 A ZA201304612 A ZA 201304612A ZA 201304612 B ZA201304612 B ZA 201304612B
Authority
ZA
South Africa
Prior art keywords
based micro
cmos based
photonic systems
photonic
systems
Prior art date
Application number
ZA2013/04612A
Inventor
Lukas Willem Snyman
Original Assignee
Tshwane Univ Of Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tshwane Univ Of Tech filed Critical Tshwane Univ Of Tech
Publication of ZA201304612B publication Critical patent/ZA201304612B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • G02B6/428—Electrical aspects containing printed circuit boards [PCB]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
ZA2013/04612A 2010-11-30 2013-06-21 Cmos based micro-photonic systems ZA201304612B (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
ZA201008577 2010-11-30
ZA201008579 2010-11-30
ZA201006804 2010-12-23
ZA201006803 2010-12-23
ZA201103826 2011-05-25
ZA201105761 2011-08-05
ZA201107103 2011-09-29
PCT/ZA2011/000090 WO2012075511A2 (en) 2010-11-30 2011-11-30 Cmos based micro-photonic systems

Publications (1)

Publication Number Publication Date
ZA201304612B true ZA201304612B (en) 2014-09-25

Family

ID=45856046

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA2013/04612A ZA201304612B (en) 2010-11-30 2013-06-21 Cmos based micro-photonic systems

Country Status (4)

Country Link
EP (1) EP2647060A2 (en)
CN (1) CN103380500B (en)
WO (1) WO2012075511A2 (en)
ZA (1) ZA201304612B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013201217A1 (en) * 2013-01-25 2014-07-31 Osram Opto Semiconductors Gmbh Organic optoelectronic component has organic light emitting element that emits light which is radiated internally to transparent outer layer and is routed to organic light-detecting element
CN103604784B (en) * 2013-11-05 2016-05-18 浙江工业大学 Array sensing chip is analyzed in the fluoroscopic examination of CMOS contact
CN103604785A (en) * 2013-11-05 2014-02-26 浙江工业大学 Fluorescence detection system
EP3068900B1 (en) 2013-11-17 2020-01-08 Quantum-Si Incorporated Active-source-pixel, integrated device for rapid analysis of biological and chemical speciments
DE102014104240A1 (en) * 2014-03-26 2015-10-01 Sick Ag Optical sensor
CN104865223A (en) * 2015-05-27 2015-08-26 东南大学 Refractive index sensing chip of silicon nitride waveguide Bragg grating and preparation method of refractive index sensing chip
US9676735B2 (en) 2015-08-27 2017-06-13 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Process for the preparation of efavirenz and devices suitable therefore
CN114280724B (en) * 2022-01-26 2024-03-22 苏州海光芯创光电科技股份有限公司 Silicon light three-dimensional integrated spectrometer and preparation method of optical chip thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100928203B1 (en) * 2007-12-10 2009-11-25 한국전자통신연구원 Silicon biosensor and its manufacturing method
US8395226B2 (en) * 2009-01-27 2013-03-12 Insiava (Pty) Limited Microchip-based MOEMS and waveguide device

Also Published As

Publication number Publication date
WO2012075511A2 (en) 2012-06-07
EP2647060A2 (en) 2013-10-09
WO2012075511A3 (en) 2012-11-29
CN103380500A (en) 2013-10-30
CN103380500B (en) 2015-12-09

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