WO2025251998A1 - 射频前端模组及射频芯片 - Google Patents

射频前端模组及射频芯片

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Publication number
WO2025251998A1
WO2025251998A1 PCT/CN2025/098038 CN2025098038W WO2025251998A1 WO 2025251998 A1 WO2025251998 A1 WO 2025251998A1 CN 2025098038 W CN2025098038 W CN 2025098038W WO 2025251998 A1 WO2025251998 A1 WO 2025251998A1
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
terminal
resistor
circuit
end module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2025/098038
Other languages
English (en)
French (fr)
Inventor
邵一祥
郭嘉帅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lansus Technologies Inc
Original Assignee
Lansus Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lansus Technologies Inc filed Critical Lansus Technologies Inc
Priority to EP25819051.1A priority Critical patent/EP4723490A1/en
Priority to KR1020257043871A priority patent/KR20260013243A/ko
Publication of WO2025251998A1 publication Critical patent/WO2025251998A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45376—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using junction FET transistors as the active amplifying circuit
    • H03F3/4547—Mirror types
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Definitions

  • This invention relates to the field of wireless communication technology, and in particular to a radio frequency front-end module and a radio frequency chip.
  • Mobile communication terminals have become increasingly prevalent in today's society for wireless communication, and their ever-growing processing capabilities have led to their evolution into mobile multimedia centers.
  • radio frequency signals are amplified by a power amplifier and transmitted through an antenna.
  • the radio frequency (RF) front-end (RF front-end) of mobile terminals is a key component for signal transmission and reception in RF transceiver chips.
  • the RF front-end is responsible for transmitting and receiving signals of various standards and modes.
  • This places increasing demands on the RF amplifiers in the RF front-end, such as higher frequencies, wider bandwidths, higher linearity, and wider operating voltage ranges.
  • the RF amplifier in an access point (AP)/router typically operates at around 5V, while the RF amplifier in station devices (such as mobile phones and tablets) often operates at around 3.3V.
  • the purpose of this invention is to provide a radio frequency front-end module that outputs high and low levels through a bias circuit, thereby solving the problems of poor operating voltage regulation, high cost, and limited applicability of existing radio frequency front-end modules.
  • embodiments of the present invention provide a radio frequency (RF) front-end module, comprising a signal input terminal, an input matching circuit, an amplification circuit, an output matching circuit, and a signal output terminal connected in sequence; characterized in that the RF front-end module further comprises a bias circuit, a first terminal of which is connected to a power supply, a second terminal of which is connected to an external logic control circuit, and a third terminal of which is used to output a bias current to the input terminal of the amplification circuit, wherein the external logic control circuit is used to control the on/off state of the amplification circuit;
  • RF radio frequency
  • the bias circuit includes a current mirror circuit, a first transistor, a second transistor, a third transistor, a first resistor, a second resistor, and a third resistor;
  • the base of the first transistor serves as the second terminal of the bias circuit, the emitter of the first transistor is grounded, and the collector of the first transistor is connected to the first terminal of the second resistor and the first terminal of the third resistor, respectively.
  • the second terminal of the second resistor serves as the first terminal of the bias circuit and is connected to the first terminal of the first resistor.
  • the second terminal of the first resistor is connected to the emitter of the second transistor, and the second terminal of the third resistor is connected to the base of the second transistor.
  • the collector of the second transistor is connected to the collector of the third transistor, and the collector of the third transistor is also connected to the base of the third transistor.
  • the emitter of the third transistor is connected to the input terminal of the current mirror circuit, and the output terminal of the current mirror circuit serves as the third terminal of the bias circuit.
  • the RF front-end module further includes a fourth resistor, and the base of the first transistor is connected to the external logic control circuit via the fourth resistor in series.
  • the current mirror circuit includes a current mirror unit and a voltage adjustment unit; the first terminal of the voltage adjustment unit serves as the input terminal of the current mirror circuit, the second terminal of the voltage adjustment unit is used to connect to an external linear regulated power supply, the third terminal of the voltage adjustment unit is connected to the input terminal of the current mirror unit, and the output terminal of the current mirror unit serves as the output terminal of the current mirror circuit; the voltage adjustment unit is used to adjust the bias voltage output by the third transistor, and the current mirror unit is used to convert the bias voltage into a corresponding bias current for output.
  • the voltage adjustment unit includes a fourth transistor, a fifth resistor, and a sixth resistor;
  • the base of the fourth transistor serves as the first terminal of the voltage adjustment unit
  • the collector of the fourth transistor serves as the second terminal of the voltage adjustment unit and is connected to the first terminal of the fifth resistor
  • the emitter of the fourth transistor is connected to the first terminal of the sixth resistor
  • the second terminal of the sixth resistor serves as the third terminal of the voltage adjustment unit and is connected to the second terminal of the fifth resistor.
  • the current mirror unit includes a fifth transistor, a sixth transistor, a seventh transistor, and a seventh resistor;
  • the collector of the fifth transistor serves as the input terminal of the current mirror unit.
  • the collector of the fifth transistor is also connected to the base of the fifth transistor and the base of the seventh transistor.
  • the emitter of the fifth transistor is connected to the collector of the sixth transistor and the base of the sixth transistor, and the emitter of the sixth transistor is grounded.
  • the collector of the seventh transistor is connected to the first terminal of the seventh resistor, and the second terminal of the seventh resistor is connected to the first terminal of the fifth resistor.
  • the emitter of the seventh transistor serves as the output terminal of the current mirror unit.
  • the amplifier circuit is an eighth transistor, with the base of the eighth transistor serving as the input terminal of the amplifier circuit, the collector of the eighth transistor serving as the output terminal of the amplifier circuit, and the emitter of the eighth transistor grounded.
  • the RF front-end module further includes a first inductor, which is connected to the output terminal of the amplifier circuit, and the second terminal of the first inductor is used to connect to the power supply.
  • the radio frequency front-end module further includes a ninth transistor, the collector of which is connected to the collector of the second transistor and the base of the ninth transistor, and the emitter of which is connected to the collector of the third transistor.
  • the first transistor is an NPN transistor and the second transistor is a PNP transistor.
  • embodiments of the present invention provide a radio frequency (RF) chip, the RF chip including the aforementioned RF front-end module.
  • RF radio frequency
  • the RF front-end module of the present invention by setting a bias circuit on the RF front-end module, wherein the first end of the bias circuit is used to connect to the power supply, the second end of the bias circuit is used to connect to the external logic control circuit, and the third end of the bias circuit is used to output bias current to the input end of the amplifier circuit, and the external logic control circuit is used to control the on and off of the amplifier circuit; this allows the bias circuit to adaptively operate at different voltages without external interference; reducing energy consumption, saving costs, and improving product lifespan.
  • Figure 1 is an overall circuit diagram of the radio frequency front-end module provided in an embodiment of the present invention.
  • Figure 2 is a V/I curve diagram of the sixth resistor being 1000 ohms according to the embodiments of the present invention.
  • Figure 3 is a V/I curve diagram of the sixth resistor being 600 ohms according to an embodiment of the present invention.
  • 100 is the RF front-end module
  • 1 is the signal input terminal
  • 2 is the input matching circuit
  • 3 is the amplifier circuit
  • 4 is the output matching circuit
  • 5 is the signal output terminal
  • 6 is the bias circuit
  • 61 is the current mirror circuit
  • 611 is the current mirror unit
  • 612 is the voltage adjustment unit.
  • the RF front-end module 100 includes a signal input terminal 1, an input matching circuit 2, an amplifier circuit 3, an output matching circuit 4, and a signal output terminal 5, which are connected in sequence.
  • the RF front-end module 100 also includes a bias circuit 6.
  • the first terminal of the bias circuit 6 is used to connect to a power supply
  • the second terminal of the bias circuit 6 is used to connect to an external logic control circuit
  • the third terminal of the bias circuit 6 is used to output a bias current to the input terminal of the amplifier circuit 3.
  • the external logic control circuit is used to control the on/off state of the amplifier circuit 3.
  • the external logic control circuit when the external logic control circuit outputs a high level, the amplifier circuit 3 is turned on; when the external logic control circuit outputs a low level, the amplifier circuit 3 is turned off.
  • the external logic control circuit can also output a high level, causing the amplifier circuit 3 to be turned off, and output a low level, causing the amplifier circuit 3 to be turned on.
  • the input matching circuit 2 is a first capacitor C1
  • the output matching circuit 4 is a second capacitor C2.
  • the bias circuit 6 includes a current mirror circuit 61, a first transistor Q1, a second transistor Q2, a third transistor Q3, a first resistor R1, a second resistor R2, and a third resistor R3.
  • the base of the first transistor Q1 serves as the second terminal of the bias circuit 6, the emitter of the first transistor Q1 is grounded, and the collector of the first transistor Q1 is connected to the first terminals of the second resistor R2 and the third resistor R3.
  • the second terminal of the second resistor R2 serves as the first terminal of the bias circuit 6 and is connected to the first terminal of the first resistor R1.
  • the second terminal of the first resistor R1 is connected to the emitter of the second transistor Q2, the second terminal of the third resistor R3 is connected to the base of the second transistor Q2, the collector of the second transistor Q2 is connected to the collector of the third transistor Q3, the collector of the third transistor Q3 is also connected to the base of the third transistor Q3, the emitter of the third transistor Q3 is connected to the input terminal of the current mirror circuit 61, and the output terminal of the current mirror circuit 61 serves as the third terminal of the bias circuit 6.
  • the first transistor Q1 is an NPN transistor
  • the second transistor Q2 is a PNP transistor.
  • the first transistor Q1 is connected to the power supply through the second resistor R2
  • the second transistor Q2 is connected to the power supply through the first resistor R1.
  • This power supply meets a certain voltage range, such as 3.5V-5V.
  • the first resistor R1 and the second resistor R2 provide stable power supplies for the second transistor Q2 and the third transistor Q3, respectively.
  • the collector and base of the third transistor Q3 are connected together to form a diode.
  • the number of third transistors Q3 can be increased according to the required voltage range of the power supply, which will not be described here.
  • a high-level output from an external logic control circuit turns on the first transistor Q1, causing its collector to output a low-level signal, which in turn turns on the second transistor Q2.
  • the collector of the second transistor Q2 outputs a bias current to the third transistor Q3, and the emitter of the third transistor Q3 outputs a bias current to the current mirror circuit 61.
  • the current mirror circuit 61 then outputs an adjusted bias current to the input of the amplifier circuit 3, thus enabling the amplifier circuit 3 to be turned on or off.
  • the external logic control circuit outputs a high-level signal
  • the amplifier circuit 3 is on; when it outputs a low-level signal, the amplifier circuit 3 is off. This allows the bias circuit 6 to adaptively operate at different voltages without external interference, reducing energy consumption and extending product lifespan.
  • the RF front-end module 100 further includes a fourth resistor R4.
  • the base of the first transistor Q1 is connected to the external logic control circuit via the fourth resistor R4 in series.
  • the fourth resistor R4 is used to adjust the stability of the control signal output by the external logic control circuit, ensuring the safe operation of the first transistor Q1.
  • the current mirror circuit 61 includes a current mirror unit 611 and a voltage adjustment unit 612.
  • the first terminal of the voltage adjustment unit 612 serves as the input terminal of the current mirror circuit 61
  • the second terminal of the voltage adjustment unit 612 is connected to an external linear regulated power supply (LDO)
  • the third terminal of the voltage adjustment unit 612 is connected to the input terminal of the current mirror unit 611
  • the output terminal of the current mirror unit 611 serves as the output terminal of the current mirror circuit 61.
  • the voltage adjustment unit 612 is used to adjust the bias voltage output by the third transistor Q3, and the current mirror unit 611 is used to convert the bias voltage into a corresponding bias current for output.
  • the current mirror circuit 61 converts the voltage output by the voltage adjustment unit 612 into a corresponding bias current, thereby effectively controlling the on/off state of the amplifier circuit 3.
  • the voltage adjustment unit 612 includes a fourth transistor Q4, a fifth resistor R5, and a sixth resistor R6.
  • the base of the fourth transistor Q4 serves as the first terminal of the voltage adjustment unit 612
  • the collector of the fourth transistor Q4 serves as the second terminal of the voltage adjustment unit 612 and is connected to the first terminal of the fifth resistor R5
  • the emitter of the fourth transistor Q4 is connected to the first terminal of the sixth resistor R6
  • the second terminal of the sixth resistor R6 serves as the third terminal of the voltage adjustment unit 612 and is connected to the second terminal of the fifth resistor R5.
  • the current mirror unit 611 includes a fifth transistor Q5, a sixth transistor Q6, a seventh transistor Q7, and a seventh resistor R7.
  • the collector of the fifth transistor Q5 serves as the input terminal of the current mirror unit 611.
  • the collector of the fifth transistor Q5 is also connected to the base of the fifth transistor Q5 and the base of the seventh transistor Q7.
  • the emitter of the fifth transistor Q5 is connected to the collector of the sixth transistor Q6 and the base of the sixth transistor Q6.
  • the emitter of the sixth transistor Q6 is grounded.
  • the collector of the seventh transistor Q7 is connected to the first terminal of the seventh resistor R7, and the second terminal of the seventh resistor R7 is connected to the first terminal of the fifth resistor R5.
  • the emitter of the seventh transistor Q7 serves as the output terminal of the current mirror unit 611.
  • the amplifier circuit 3 is an eighth transistor Q8.
  • the base of the eighth transistor Q8 serves as the input terminal of the amplifier circuit 3
  • the collector of the eighth transistor Q8 serves as the output terminal of the amplifier circuit 3
  • the emitter of the eighth transistor Q8 is grounded.
  • amplifier circuit 3 can be a bipolar transistor or a field-effect transistor, used to amplify radio frequency (RF) signals.
  • the small RF signal enters the base of the eighth transistor Q8 through the first capacitor C1; the amplified RF signal is output through the second capacitor C2.
  • the radio frequency front-end module 100 further includes a first inductor L1, which is connected to the output terminal of the amplifier circuit 3, and the second terminal of the first inductor L1 is used to connect to the power supply.
  • the radio frequency front-end module 100 further includes a ninth transistor Q9.
  • the collector of the ninth transistor Q9 is connected to the collector of the second transistor Q2 and the base of the ninth transistor Q9, respectively, and the emitter of the ninth transistor Q9 is connected to the collector of the third transistor Q3.
  • the emitter output current of the third transistor Q3 is used to control the operating state of the fourth transistor Q4.
  • LDO_Out is controlled by the PAEN signal output from the external logic control circuit.
  • LDO_Out outputs a DC voltage, such as 2.8V; otherwise, LDO_Out is 0V.
  • the base current of the fourth transistor Q4 increases, the resistance between the collector and emitter of the fourth transistor Q4 decreases, and R' also decreases.
  • the bias current output from the emitter of the seventh transistor Q7 gradually increases, and the operating state of the eighth transistor Q8 also changes synchronously.
  • control range under different voltages can be adjusted by changing the resistance value of the sixth resistor R6; the following examples are taken with the sixth resistor R6 being 1000 ohms and 500 ohms respectively.
  • This invention provides a radio frequency (RF) chip, which includes the aforementioned RF front-end module 100.
  • RF radio frequency

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)

Abstract

本发明涉及无线通讯技术领域，本发明公开了一种射频前端模组，其包括依次电连接的信号输入端、输入匹配电路、放大电路、输出匹配电路和信号输出端；射频前端模组还包括偏置电路，偏置电路的第一端用于连接供电电源，偏置电路的第二端用于连接外部逻辑控制电路，偏置电路的第三端用于输出偏置电流至放大电路的输入端，所述外部逻辑控制电路用于控制所述放大电路的通断；偏置电路包括电流镜电路、第一三极管、第二三极管、第三三极管、第一电阻、第二电阻以及第三电阻。本发明能够提升整个射频前端模组的IIP3性能。

Description

射频前端模组及射频芯片 技术领域
本发明涉及无线通讯技术领域，尤其是涉及一种射频前端模组及射频芯片。
背景技术
移动通信终端对于无线通信来说，在当今社会中已变得越得越普遍，其越来越强大的处理能力使得移动通信终端逐渐演化为移动多媒体中心。在移动通信体系中，目前有2种主要技术路线，蜂窝移动通信和WIFI。这2个体系还在不断演进中，其共同特点是通信带宽更大、传输速率更高，以满足用户不断增长的使用需求。在移动通信终端中，射频信号由功率放大器放大，通过天线发射。
随着通信技术的发展，在射频收发芯片中，手机终端的射频前端是实现信号传输收发的关键器件，随着通信多模多制式化，射频前端担负着多种制式多模信号收发的作用。对射频前端的射频放大器的要求也在提升，如频率更高、带宽更大、线性度要求更高、工作电压范围更宽，等等。如对于WIFI系统来说，AP/路由器中的射频放大器，工作电压通常为5V左右，而station设备(如手机，平板电脑)中的射频放大器工作电压往往在3.3V左右。
然而，常规的射频放大器只能工作在较窄的电压范围，无法同时应用于不同设备；射频放大器供应商也往往需要针对不同工作电压开发不同产品，这增加了产品开发成本和周期。
发明内容
本发明实施例的目的在于提供一种射频前端模组，通过偏置电路输出高低电平；用以解决现有的射频前端模组的工作电压调节效果差，成本高，适用范围小的问题。
为了解决上述技术问题，第一方面，本发明实施例提供了一种射频前端模组，所述射频前端模组包括依次电连接的信号输入端、输入匹配电路、放大电路、输出匹配电路和信号输出端；其特征在于，所述射频前端模组还包括偏置电路，所述偏置电路的第一端用于连接供电电源，所述偏置电路的第二端用于连接外部逻辑控制电路，所述偏置电路的第三端用于输出偏置电流至所述放大电路的输入端，所述外部逻辑控制电路用于控制所述放大电路的通断；
所述偏置电路包括电流镜电路、第一三极管、第二三极管、第三三极管、第一电阻、第二电阻以及第三电阻；
所述第一三极管的基极作为所述偏置电路的第二端，所述第一三极管的发射极接地，所述第一三极管的集电极分别连接所述第二电阻的第一端和所述第三电阻的第一端；所述第二电阻的第二端作为所述偏置电路的第一端且与所述第一电阻的第一端连接，所述第一电阻的第二端连接所述第二三极管的发射极，所述第三电阻的第二端连接所述第二三极管的基极，所述第二三极管的集电极连接所述第三三极管的集电极，所述第三三极管的集电极还连接所述第三三极管的基极，所述第三三极管的发射极连接所述电流镜电路的输入端，所述电流镜电路的输出端作为所述偏置电路的第三端。
优选的，所述射频前端模组还包括第四电阻，所述第一三极管的基极经串联所述第四电阻后连接至所述外部逻辑控制电路。
优选的，所述电流镜电路包括电流镜单元和电压调整单元；所述电压调整单元的第一端作为所述电流镜电路的输入端，所述电压调整单元的第二端用于连接外部线性稳压电源，所述电压调整单元的第三端连接所述电流镜单元的输入端，所述电流镜单元的输出端作为所述电流镜电路的输出端；所述电压调整单元用于调节所述第三三极管输出的偏置电压，所述电流镜单元用于将所述偏置电压转换成相应的偏置电流进行输出。
优选的，所述电压调整单元包括第四三极管、第五电阻和第六电阻；
所述第四三极管的基极作为所述电压调整单元的第一端，所述第四三极管的集电极作为所述电压调整单元的第二端且连接所述第五电阻的第一端，所述第四三极管的发射极连接所述第六电阻的第一端，所述第六电阻的第二端作为所述电压调整单元的第三端且连接所述第五电阻的第二端。
优选的，所述电流镜单元包括第五三极管、第六三极管、第七三极管和第七电阻；
所述第五三极管的集电极作为所述电流镜单元的输入端，所述第五三极管的集电极还分别连接所述第五三极管的基极和所述第七三极管的基极，所述第五三极管的发射极连接所述第六三极管的集电极和所述第六三极管的基极，所述第六三极管的发射极接地；所述第七三极管的集电极连接所述第七电阻的第一端，所述第七电阻的第二端连接所述第五电阻的第一端；所述第七三极管的发射极作为所述电流镜单元的输出端。
优选的，所述放大电路为第八三极管，所述第八三极管的基极作为所述放大电路的输入端，所述第八三极管的集电极作为所述放大电路的输出端，所述第八三极管的发射极接地。
优选的，所述射频前端模组还包括第一电感，所述第一电感连接所述放大电路的输出端，所述第一电感的第二端用于连接所述供电电源。
优选的，所述射频前端模组还包括第九三极管，所述第九三极管的集电极分别连接所述第二三极管的集电极和所述第九三极管的基极，所述第九三极管的发射极连接所述第三三极管的集电极。
优选的，所述第一三极管为NPN三极管，所述第二三极管为PNP三极管。
第二方面，本发明实施例提供一种射频芯片，所述射频芯片包括上述的射频前端模组。
与现有技术相比，本发明中的射频前端模组，通过在射频前端模组上设置偏置电路，所述偏置电路的第一端用于连接供电电源，所述偏置电路的第二端用于连接外部逻辑控制电路，所述偏置电路的第三端用于输出偏置电流至所述放大电路的输入端，所所述外部逻辑控制电路用于控制所述放大电路的通断；使得偏置电路可以自适应地工作于不同电压，而无需外界干涉；降低能耗，节约成本，提高产品使用寿命。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图，其中：
图1为本发明实施列提供的射频前端模组的整体电路图；
图2为本发明实施列提供的第六电阻为1000欧时的V/I曲线图；
图3为本发明实施列提供的第六电阻为600欧时的V/I曲线图。
图中，100、射频前端模组，1、信号输入端，2、输入匹配电路，3、放大电路，4、输出匹配电路，5、信号输出端，6、偏置电路，61、电流镜电路，611、电流镜单元，612、电压调整单元。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
实施例一
请参阅附图1-图3所示，本发明实施例提供了一种射频前端模组100，所述射频前端模组100包括依次电连接的信号输入端1、输入匹配电路2、放大电路3、输出匹配电路4和信号输出端5；所述射频前端模组100还包括偏置电路6，所述偏置电路6的第一端用于连接供电电源，所述偏置电路6的第二端用于连接外部逻辑控制电路，所述偏置电路6的第三端用于输出偏置电流至所述放大电路3的输入端，所述外部逻辑控制电路用于控制所述放大电路3的通断。
其中，所述外部逻辑控制电路输出高电平时，所述放大电路3打开；所述外部逻辑控制电路输出低电平时，所述放大电路3关闭。当然，所述外部逻辑控制电路也可以输出高电平时，所述放大电路3关闭；所述外部逻辑控制电路输出低电平时，所述放大电路3打开。
本实施例中，所述输入匹配电路2为第一电容C1，所述输出匹配电路4为第二电容C2。
所述偏置电路6包括电流镜电路61、第一三极管Q1、第二三极管Q2、第三三极管Q3、第一电阻R1、第二电阻R2以及第三电阻R3；所述第一三极管Q1的基极作为所述偏置电路6的第二端，所述第一三极管Q1的发射极接地，所述第一三极管Q1的集电极分别连接所述第二电阻R2的第一端和所述第三电阻R3的第一端；所述第二电阻R2的第二端作为所述偏置电路6的第一端且与所述第一电阻R1的第一端连接，所述第一电阻R1的第二端连接所述第二三极管Q2的发射极，所述第三电阻R3的第二端连接所述第二三极管Q2的基极，所述第二三极管Q2的集电极连接所述第三三极管Q3的集电极，所述第三三极管Q3的集电极还连接所述第三三极管Q3的基极，所述第三三极管Q3的发射极连接所述电流镜电路61的输入端，所述电流镜电路61的输出端作为所述偏置电路6的第三端。
本实施例中，所述第一三极管Q1为NPN三极管，所述第二三极管Q2为PNP三极管。具体的，通过将第一三极管Q1通过第二电阻R2连接至供电电源，将第二三极管Q2通过第一电阻R1连接供电电源，该供电电源满足一定的电压范围，如3.5V-5V之间。同时，第一电阻R1和第二电阻R2能分别为第二三极管Q2和第三三极管Q3提供稳定的供电电源。
其中，将第三三极管Q3的集电极和基极连接在一起形成二极管形式，可以根据所需的供电电源的电压范围，增加多个第三三极管Q3的数量，此处不再描述。
通过外部逻辑控制电路输出高电平，使得第一三极管Q1导通，第一三极管Q1的集电极输出低电平，使得第二三极管Q2导通。通过第二三极管Q2的集电极输出第三三极管Q3上，通过第三三极管Q3的发射极输出偏置电流至电流镜电路61上，通过电流镜电路61输出调整的偏置电流至放大电路3的输入端，实现对放大电路3的打开或关闭功能。所述外部逻辑控制电路输出高电平时，所述放大电路3打开；所述外部逻辑控制电路输出低电平时，所述放大电路3关闭。使得偏置电路6可以自适应地工作于不同电压，而无需外界干涉；降低能耗，提高产品使用寿命。
本实施例中，所述射频前端模组100还包括第四电阻R4，所述第一三极管Q1的基极经串联所述第四电阻R4后连接至所述外部逻辑控制电路。通过第四电阻R4用于调节外部逻辑控制电路输出控制信号的稳定性，保证第一三极管Q1的工作安全。
本实施例中，所述电流镜电路61包括电流镜单元611和电压调整单元612；所述电压调整单元612的第一端作为所述电流镜电路61的输入端，所述电压调整单元612的第二端用于连接外部线性稳压电源(LDO)，所述电压调整单元612的第三端连接所述电流镜单元611的输入端，所述电流镜单元611的输出端作为所述电流镜电路61的输出端。所述电压调整单元612用于调节所述第三三极管Q3输出的偏置电压，所述电流镜单元611用于将所述偏置电压转换成相应的偏置电流进行输出。通过电压调整单元612用于调节第三三极管Q3输出的电流，使其处在不同的电压下控制范围，电压范围控制效果好。同时，通过电流镜电路61根据电压调整单元612输出的电压转换成相应的偏置电流，从而有效控制放大电路3的通断。
本实施例中，所述电压调整单元612包括第四三极管Q4、第五电阻R5和第六电阻R6。
所述第四三极管Q4的基极作为所述电压调整单元612的第一端，所述第四三极管Q4的集电极作为所述电压调整单元612的第二端且连接所述第五电阻R5的第一端，所述第四三极管Q4的发射极连接所述第六电阻R6的第一端，所述第六电阻R6的第二端作为所述电压调整单元612的第三端且连接所述第五电阻R5的第二端。
本实施例中，所述电流镜单元611包括第五三极管Q5、第六三极管Q6、第七三极管Q7和第七电阻R7；所述第五三极管Q5的集电极作为所述电流镜单元611的输入端，所述第五三极管Q5的集电极还分别连接所述第五三极管Q5的基极和所述第七三极管Q7的基极，所述第五三极管Q5的发射极连接所述第六三极管Q6的集电极和所述第六三极管Q6的基极，所述第六三极管Q6的发射极接地；所述第七三极管Q7的集电极连接所述第七电阻R7的第一端，所述第七电阻R7的第二端连接所述第五电阻R5的第一端；所述第七三极管Q7的发射极作为所述电流镜单元611的输出端。
本实施例中，所述放大电路3为第八三极管Q8，所述第八三极管Q8的基极作为所述放大电路3的输入端，所述第八三极管Q8的集电极作为所述放大电路3的输出端，所述第八三极管Q8的发射极接地。
可选的，放大电路3是双极性晶体管，也可以是场效应管，用于放大射频信号。射频小信号通过第一电容C1进入第八三极管Q8的基极；经放大的射频信号经第二电容C2输出。
本实施例中，所述射频前端模组100还包括第一电感L1，所述第一电感L1连接所述放大电路3的输出端，所述第一电感L1的第二端用于连接所述供电电源。
本实施例中，所述射频前端模组100还包括第九三极管Q9，所述第九三极管Q9的集电极分别连接所述第二三极管Q2的集电极和所述第九三极管Q9的基极，所述第九三极管Q9的发射极连接所述第三三极管Q3的集电极。
具体实施时，第三三极管Q3的发射极输出电流用于控制第四三极管Q4的工作状态。
LDO_Out受外部逻辑控制电路输出的PAEN信号控制。当PAEN信号为高电平时，LDO_Out输出直流电压，如2.8V；否则LDO_Out为0V。
当PAEN信号为低电平时，LDO_2.8V＝0V。此时第三三极管Q3的集电极没有输出偏置电流，第八三极管Q8不工作。
当PAEN信号为高电平，且VCC<LowLimitV时，如LowLimitV＝3.6V，VCC在第三三极管Q3、第九三极管Q9、第五三极管Q5和第六三极管Q6的PN结压降作用下，第四三极管Q4的基极无法得到足够的驱动电流，导致第四三极管Q4的集电极和发射极无法导通，因此R`＝R5。
当PAEN信号为高电平，且VCC>LowLimitV时，如LowLimitV＝3.6V。第四三极管Q4的基极电流增加，第四三极管Q4的集电极和发射极之间电阻减小，R`也随之减小，在第五三极管Q5、第六三极管Q6及第七三极管Q7的电流镜作用下，第七三极管Q7的发射极输出的偏置电流逐步增加，第八三极管Q8的工作状态也同步改变。
因此当VCC从低电压向高电压变化时，第八三极管Q8的基极偏置电流变化如图2所示。
为了增加电路设计灵活性，可通过改变第六电阻R6的阻值来调整不同电压下的控制范围；下面以第六电阻R6分别为1000欧姆和500欧姆为例。
第六电阻R6＝1000欧时，图2所示V/I曲线中，m1和m2的电流值均小于0.8mA，此时电流值更小。
第六电阻R6＝500欧时，图3所示V/I曲线中，m3和m4的电流值均大于1.12mA，此时电流值更大。
实施例二
本发明实施例提供一种射频芯片，所述射频芯片包括上述的射频前端模组100。
需要说明的是，在本文中，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者装置不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者装置所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括该要素的过程、方法、物品或者装置中还存在另外的相同要素。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其它相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

  1. 一种射频前端模组，所述射频前端模组包括依次电连接的信号输入端、输入匹配电路、放大电路、输出匹配电路和信号输出端；其特征在于，所述射频前端模组还包括偏置电路，所述偏置电路的第一端用于连接供电电源，所述偏置电路的第二端用于连接外部逻辑控制电路，所述偏置电路的第三端用于输出偏置电流至所述放大电路的输入端，所述外部逻辑控制电路用于控制所述放大电路的通断；
    所述偏置电路包括电流镜电路、第一三极管、第二三极管、第三三极管、第一电阻、第二电阻以及第三电阻；
    所述第一三极管的基极作为所述偏置电路的第二端，所述第一三极管的发射极接地，所述第一三极管的集电极分别连接所述第二电阻的第一端和所述第三电阻的第一端；所述第二电阻的第二端作为所述偏置电路的第一端且与所述第一电阻的第一端连接，所述第一电阻的第二端连接所述第二三极管的发射极，所述第三电阻的第二端连接所述第二三极管的基极，所述第二三极管的集电极连接所述第三三极管的集电极，所述第三三极管的集电极还连接所述第三三极管的基极，所述第三三极管的发射极连接所述电流镜电路的输入端，所述电流镜电路的输出端作为所述偏置电路的第三端。
  2. 如权利要求1所述的射频前端模组，其特征在于，所述射频前端模组还包括第四电阻，所述第一三极管的基极经串联所述第四电阻后连接至所述外部逻辑控制电路。
  3. 如权利要求1所述的射频前端模组，其特征在于，所述电流镜电路包括电流镜单元和电压调整单元；所述电压调整单元的第一端作为所述电流镜电路的输入端，所述电压调整单元的第二端用于连接外部线性稳压电源，所述电压调整单元的第三端连接所述电流镜单元的输入端，所述电流镜单元的输出端作为所述电流镜电路的输出端；所述电压调整单元用于调节所述第三三极管输出的偏置电压，所述电流镜单元用于将所述偏置电压转换成相应的偏置电流进行输出。
  4. 如权利要求3所述的射频前端模组，其特征在于，所述电压调整单元包括第四三极管、第五电阻和第六电阻；
    所述第四三极管的基极作为所述电压调整单元的第一端，所述第四三极管的集电极作为所述电压调整单元的第二端且连接所述第五电阻的第一端，所述第四三极管的发射极连接所述第六电阻的第一端，所述第六电阻的第二端作为所述电压调整单元的第三端且连接所述第五电阻的第二端。
  5. 如权利要求4所述的射频前端模组，其特征在于，所述电流镜单元包括第五三极管、第六三极管、第七三极管和第七电阻；
    所述第五三极管的集电极作为所述电流镜单元的输入端，所述第五三极管的集电极还分别连接所述第五三极管的基极和所述第七三极管的基极，所述第五三极管的发射极连接所述第六三极管的集电极和所述第六三极管的基极，所述第六三极管的发射极接地；所述第七三极管的集电极连接所述第七电阻的第一端，所述第七电阻的第二端连接所述第五电阻的第一端；所述第七三极管的发射极作为所述电流镜单元的输出端。
  6. 如权利要求1所述的射频前端模组，其特征在于，所述放大电路为第八三极管，所述第八三极管的基极作为所述放大电路的输入端，所述第八三极管的集电极作为所述放大电路的输出端，所述第八三极管的发射极接地。
  7. 如权利要求1所述的射频前端模组，其特征在于，所述射频前端模组还包括第一电感，所述第一电感连接所述放大电路的输出端，所述第一电感的第二端用于连接所述供电电源。
  8. 如权利要求1所述的射频前端模组，其特征在于，所述射频前端模组还包括第九三极管，所述第九三极管的集电极分别连接所述第二三极管的集电极和所述第九三极管的基极，所述第九三极管的发射极连接所述第三三极管的集电极。
  9. 如权利要求1所述的射频前端模组，其特征在于，所述第一三极管为NPN三极管，所述第二三极管为PNP三极管。
  10. 一种射频芯片，其特征在于，所述射频芯片包括如权利要求1-9任一项所述的射频前端模组。
PCT/CN2025/098038 2024-06-05 2025-05-29 射频前端模组及射频芯片 Pending WO2025251998A1 (zh)

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CN119070847B (zh) * 2024-10-30 2025-01-14 深圳飞骧科技股份有限公司 射频前端模组及射频芯片

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