WO2025200880A1 - 方形基板的电镀卡盘及电镀方法 - Google Patents

方形基板的电镀卡盘及电镀方法

Info

Publication number
WO2025200880A1
WO2025200880A1 PCT/CN2025/078254 CN2025078254W WO2025200880A1 WO 2025200880 A1 WO2025200880 A1 WO 2025200880A1 CN 2025078254 W CN2025078254 W CN 2025078254W WO 2025200880 A1 WO2025200880 A1 WO 2025200880A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
chuck
square
electroplating
pressure plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2025/078254
Other languages
English (en)
French (fr)
Inventor
王晖
王坚
贾照伟
杨宏超
刁建华
肖炎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ACM Research Shanghai Inc
Original Assignee
ACM Research Shanghai Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ACM Research Shanghai Inc filed Critical ACM Research Shanghai Inc
Publication of WO2025200880A1 publication Critical patent/WO2025200880A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches

Definitions

  • a wafer plating chuck When a wafer plating chuck is applied to a square substrate, it can flatten a convex substrate. However, for concave substrates, the plating chuck only grips the edges, leaving the center unsupported. Consequently, pressure is applied to the periphery of the platen, while the center of the platen cannot contact the substrate. This prevents the concave substrate from being flattened, ultimately leading to uneven plating.
  • a pressure plate is arranged above the substrate chuck, a guide column is provided between the substrate chuck and the pressure plate, the pressure plate can rise or fall along the guide column, and a first reinforcing rib is provided at the bottom of the pressure plate, which is used to contact the edge of the substrate when the pressure plate presses the substrate, and the first reinforcing rib is square, and the inner side length is smaller than the side length of the substrate;
  • the adsorption component is a suction cup, one end of the suction cup is an adsorption end, and the other end is an air hole, and the suction cup is penetrated through the pressure plate.
  • the device further comprises a pump and a plurality of air tubes, wherein the pump is connected to the air hole of each suction cup through the air tube.
  • the layout of the plurality of suction cups on the pressing plate forms a plurality of concentric squares, and the squares are consistent with the shape of the substrate.
  • a plurality of second reinforcing ribs are further provided in the area surrounded by the first reinforcing ribs at the bottom of the pressing plate.
  • the plurality of second reinforcing ribs are square and are all concentrically arranged with the first reinforcing ribs.
  • evenly distributed second reinforcing ribs are further provided in the area surrounded by the first reinforcing ribs at the bottom of the pressing plate, for dividing the area surrounded by the first reinforcing ribs into a plurality of equal areas.
  • a third reinforcing rib is further provided in the square annular area divided into the bottom of the pressing plate by the plurality of second reinforcing ribs, and the third reinforcing rib divides the square annular area into equal parts along each side.
  • the end surface of the first reinforcing rib in contact with the substrate is provided with a tooth-shaped protrusion
  • the second reinforcing rib is also evenly distributed with a plurality of bumps, and the distances between the ends of the plurality of bumps and the tooth-shaped protrusion and the bottom of the pressure plate are equal.
  • it further comprises at least one spring pin, wherein the spring pin is inserted into the pressing plate, and when the pressing plate presses the substrate, the spring in the spring pin is in a contracted state.
  • the suction cups are evenly distributed on the pressing plate and are arranged opposite to the non-electroplating area of the substrate.
  • the suction cups are evenly distributed on the center line of the pressing plate.
  • two channels are further provided inside the pressure plate at the corresponding midline, the bottom of the channel is communicated with the air hole of the suction cup on the corresponding midline, and the top of the channel is provided with an airway opening, which is connected to the pump.
  • a fourth reinforcing rib is provided in the area surrounded by the first reinforcing rib at the bottom of the pressing plate, the fourth reinforcing rib is arranged opposite to the non-electroplating area of the substrate, and the adsorption part is a groove provided on the fourth reinforcing rib.
  • the fourth reinforcing rib is arranged on the center line of the pressing plate.
  • the opening of the vacuum groove faces downward, and an airway opening is provided at the bottom of the vacuum groove, and the airway opening is connected to a pump.
  • the present invention also provides an electroplating method for a square substrate, comprising the following steps:
  • the substrate is electroplated.
  • the present invention also provides an electroplating method for a square substrate, comprising the following steps:
  • FIG8 is a cross-sectional view of a substrate chuck according to a first embodiment of the present invention.
  • FIG10 is a schematic diagram showing the bottom of the pressure plate in the second embodiment of the present invention.
  • FIG11 is a bottom view of the pressure plate in the second embodiment of the present invention.
  • FIG12 is a cross-sectional view of a pressure plate in a second embodiment of the present invention.
  • FIG13 is a schematic diagram showing the top of the pressure plate in the third embodiment of the present invention.
  • FIG14 is a schematic diagram showing the bottom of the pressure plate in the third embodiment of the present invention.
  • FIG16 is a schematic cross-sectional view of a pressure plate in the third embodiment of the present invention.
  • illustrations provided in this embodiment are merely schematic illustrations of the basic concept of the present invention. Although the illustrations only show components relevant to the present invention and are not drawn according to the number, shape, and size of components in actual implementation, the form, quantity, and proportion of each component in actual implementation may be varied arbitrarily, and the component layout may be more complex. Furthermore, parts with the same reference numerals in multiple figures represent identical or equivalent parts or components.
  • a seal 121 is also provided on the inner edge of the substrate chuck 12.
  • a seal is formed between the outer edge of the substrate w and the inner edge of the substrate chuck 12, isolating the substrate w to be plated. This prevents the plating solution from invading the non-plating areas of the substrate w, causing uneven plating thickness, and preventing the plating solution from invading and contaminating the internal components of the substrate chuck 12.
  • a suction cup 13 is fixed to the pressure plate 11. When the substrate chuck 12 is loaded with a substrate w, the pressure plate 11 descends along the guide posts 14, pressing the substrate w. The suction force of the suction cup 13 on the substrate w flattens the substrate w.
  • At least one suction cup 13 is provided at the center of the pressing plate 11.
  • a plurality of suction cups 13 are provided on the pressing plate 11, and the layout of the plurality of suction cups 13 on the pressing plate 11 forms a plurality of concentric squares that are consistent with the shape of the substrate w.
  • each suction cup 13 includes an air hole 131 and a suction end 132.
  • the air hole 131 is provided at the top of the suction end 132.
  • the suction cup 13 is disposed within the pressure plate 11 and absorbs and flattens the substrate w via the suction end 132.
  • the distance between the suction end 132 and the bottom of the pressure plate 11 is adjustable.
  • the suction cup 13 may be provided with a thread on its exterior that cooperates with a nut to adjust the position of the suction end 132.
  • each suction cup 13 are connected to an air pipe, and each air pipe is connected to a pump through a main air pipe.
  • a plurality of air pipes are respectively connected to the air holes 131 and the main air pipe of a plurality of suction cups 13, and the main air pipe is connected to a pump.
  • the pump removes the air inside the adsorption end 132 through the air holes 131, so that a vacuum state is formed inside the adsorption end 132.
  • the air pressure inside the adsorption end 132 is lower than the air pressure outside the adsorption end 132.
  • the substrate w is adsorbed under the action of the external pressure.
  • the originally warped substrate w is flattened by the adsorption force of the adsorption end 132.
  • the pump vents air to the inside of the adsorption end 132 through the air holes 131, increases the air pressure inside the adsorption end 132, and separates the adsorption end 132 from the substrate w.
  • the substrate w When the substrate w is convexly warped, the substrate w can be directly pressed flat by the first reinforcing ribs 111 and the second reinforcing ribs 112 on the pressing plate 11. More reinforcing ribs may also be provided to increase the contact area between the pressing plate 11 and the substrate w, so that the leveling effect of the substrate w is better.
  • the pressing plate 11 is divided from the center to the edge into a central square area A, a first square annular area B, and a second square annular area C by the first reinforcing rib 111 and the second reinforcing rib 112.
  • the central square area A is provided with four suction cups 13 distributed along the square.
  • the first square annular area B is divided into four equal areas by the third reinforcing rib 113, each area is provided with a suction cup 13, and the suction cups 13 in the four areas are distributed along the square.
  • the third reinforcing rib 113 is set to divide the outer ring length of the second square annular area C into 12 areas, and similarly, the suction cups 13 in these 12 areas are distributed along the square. Since the warping range of the square substrate w is large, more suction cups 13 are set at the edge and center of the pressing plate 11 so that the pressing plate 11 can be more tightly attached to the substrate w through the suction cups 13, ensuring the uniformity of the pressing and achieving a better leveling effect on the substrate w.
  • the first reinforcing rib 111 is also provided with a circle of tooth-shaped protrusions 114.
  • the end surface of the tooth-shaped protrusions 114 just presses the edge of the substrate w, causing the substrate w to be squeezed against the seal 121 on the inner edge of the substrate chuck 12.
  • the tooth-shaped protrusions 114 can be used to discharge the gas between the pressure plate 11 and the substrate w, preventing the outer edge of the pressure plate 11 from being too close to the substrate w, resulting in vacuum adsorption, and preventing the pressure plate 11 from sticking to the substrate w when it rises.
  • a plurality of protrusions 115 are evenly distributed on the second reinforcing rib 112.
  • the plurality of protrusions 115 are equal in height to the tooth-shaped protrusions 114.
  • multiple spring pins 16 are also inserted into the pressure plate 11.
  • the spring is in a contracted state.
  • gas is introduced into the interior of the adsorption end 132 to release the substrate w from the adsorption end 132.
  • the elastic force of the spring pins 16 pushes the substrate w away, preventing the substrate w from being adsorbed on the adsorption end 132 during electroplating.
  • the adsorption end 132 still exerts an adsorption force on the substrate w, affecting the electroplating effect.
  • the spring pins 16 are arranged on the third reinforcing rib 113 at the edge of the pressure plate 11.
  • the seal 121 on the inner edge of the substrate chuck 12 can be a rubber member extending from the bottom of the substrate chuck 12 and covering the inner edge of the substrate chuck 12. This ensures a better seal between the outer edge of the substrate w and the inner edge of the substrate chuck 12, while also reducing the stress exerted on the substrate w by the inner edge of the substrate chuck 12 when the pressure plate 11 is pressed downward. Furthermore, the one-piece design eliminates the need for cumbersome installation. A through-hole is also provided on the inner edge of the substrate chuck 12 for filling and securing the seal 121, ensuring structural stability of the seal 121 and the substrate chuck 12.
  • This second embodiment provides a plating chuck for square substrates.
  • the layout of the ribs and suction cups 13 on the pressure plate 21 differs from that in the first embodiment.
  • the pressure plate 21 is provided with only a first rib 111.
  • the end surface of the first rib 111 contacts the edge of the substrate w and presses against the seal 121 on the inner edge of the substrate chuck 12.
  • Multiple suction cups 13 are distributed along the centerline of the pressure plate 21.
  • the electroplating chuck for the square substrate proposed in the second embodiment is suitable for double-sided electroplating process.
  • the area outside the center line of the square substrate w is the electroplating area, and the center line and the surrounding area are the non-electroplating area. Therefore, the suction cup 13 is only provided at the center line of the pressing plate 21, and the reinforcing ribs are only provided at the outer edge of the pressing plate 21 to prevent the suction cup 13 from adsorbing the electroplating area of the substrate w or the pressing plate 21 from pressing the electroplating area of the substrate w and affecting the electroplating effect.
  • two channels 212 are provided within the pressure plate 21, corresponding to the centerline.
  • the bottoms of the channels 212 communicate with the air holes 131 of the suction cups 13 on the two centerlines, respectively.
  • Airway openings 213 are provided at the tops of the channels 212. These openings 213 are connected to a pump for introducing gas into the suction cups 13 and for vacuuming them.
  • five airway openings 213 are provided, evenly distributed along the centerline and center of the pressure plate 21, ensuring a more uniform suction force of the suction cups 13 on the substrate w.
  • This third embodiment proposes a plating chuck for a square substrate. Compared to the second embodiment, the difference is that a groove 312 is used instead of the suction cup 13 to evacuate the interior of the pressure plate 31.
  • a groove 312 is used instead of the suction cup 13 to evacuate the interior of the pressure plate 31.
  • two fourth reinforcing ribs 311 are provided at the center line of the pressure plate 31 in a cross shape. The height of the fourth reinforcing ribs 311 is consistent with the height of the first reinforcing ribs 111.
  • the fourth reinforcing rib 311 is provided with a groove 312, which is connected to an airway port 313.
  • the airway port 313 is connected to a pump for introducing gas into the groove 312 and evacuating the interior.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明提出的方形基板的电镀卡盘，包括：基板夹盘，具有支撑基板的内缘；压板，设置在所述基板夹盘上方，所述基板夹盘与压板之间设有导向柱，所述压板可沿所述导向柱上升或下降，所述压板的底部设有第一加强筋，用于在所述压板按压基板时与基板的边缘接触，所述第一加强筋为方形，且内边长小于基板的边长；至少一个吸附件，固定在所述压板上，用于吸附基板。本发明有效地解决了大尺寸规格的方形基板产品自身的翘曲问题，方形基板的电镀均匀性得到了明显改善，产品质量和连续生产良品率都有了可靠的保证，而且结构简单、生产成本较低。

Description

方形基板的电镀卡盘及电镀方法 技术领域
本申请涉及半导体制造设备领域，特别是涉及一种方形基板的电镀卡盘及电镀方法。
背景技术
目前半导体电镀铜设备主要作业的产品对象为晶圆，其最大尺寸为12英寸，最大的翘曲范围为±3mm。将电镀卡盘的压板直接压在晶圆表面，可以对晶圆进行整平，以满足电镀工艺需求。
随着扇出先进封装技术逐渐普及以及基板材质的变化，方形基板的应用日益增多。方形基板的尺寸通常有515mm*510mm和600mm*600mm两种规格，厚度通常为1～3mm。由于方形基板的尺寸较大，且采用玻璃基底，在经过多次前道工艺后，会产生一定程度的弯曲变形，其最大翘曲范围达到了±10mm，导致方形基板的实际形状会出现凹凸两种状态。
将晶圆的电镀卡盘应用到方形基板上时，可以将凸形状态的方形基板按压平整。但是对于凹形状态的方形基板，由于电镀卡盘仅夹持方形基板的边缘，方形基板的中心无支撑，因此压力通常作用在压板的四周，而压板的中心部分无法接触方形基板，无法将凹形状态的方形基板按压平整，最终导致电镀过程中电镀不均匀。
发明内容
本发明的目的在于提供一种方形基板的电镀卡盘及电镀方法，用于解决现有技术中方形基板产生翘曲导致电镀不均匀的问题。
为实现上述目的及其它相关目的，本发明提供了一种方形基板的电镀卡盘，包括：
基板夹盘，具有支撑基板的内缘；
压板，设置在所述基板夹盘上方，所述基板夹盘与压板之间设有导向柱，所述压板可沿所述导向柱上升或下降，所述压板的底部设有第一加强筋，用于在所述压板按压基板时与基板的边缘接触，所述第一加强筋为方形，且内边长小于基板的边长；
至少一个吸附件，固定在所述压板上，用于吸附基板。
优选地，所述吸附件为吸盘，所述吸盘的一端为吸附端，另一端为气孔，所述吸盘穿设于所述压板。
优选地，还包括泵和多个气管，所述泵通过气管与每个吸盘的气孔连接。
优选地，多个吸盘在所述压板上的布局形成若干个同心的方形，所述方形与基板的形状一致。
优选地，所述第一加强筋的高度小于等于所述吸盘放松状态下的吸附端到所述压板的底部的距离。
优选地，在所述压板的底部由所述第一加强筋围成的区域内还设有多个第二加强筋，所述多个第二加强筋为方形且均与所述第一加强筋同心设置。
优选地，在所述压板的底部由所述第一加强筋围成的区域内还设有均匀分布的第二加强筋，用于将所述第一加强筋围成的区域等分为多个区域。
优选地，在所述多个第二加强筋将所述压板的底部划分出的方环形区域内还设有第三加强筋，所述第三加强筋将所述方环形区域沿每条边等分设置。
优选地，所述第一加强筋上与基板接触的端面设有齿状凸起，所述第二加强筋上还均匀分布有多个凸块，所述多个凸块与所述齿状凸起的的端部与所述压板的底部的距离是相等的。
优选地，还包括至少一个弹簧销，所述弹簧销穿设在所述压板内，当所述压板按压基板时，所述弹簧销中的弹簧处于收缩状态。
优选地，所述吸盘均匀分布在压板上，且与基板的非电镀区域相对设置。
优选地，所述吸盘均匀分布在所述压板的中线上。
优选地，所述压板内部对应中线处还设有两个通道，所述通道的底部与对应中线上的吸盘的气孔连通，所述通道的顶部设置有气道口，所述气道口与泵连接。
优选地，还包括密封件，所述密封件从所述基板夹盘底部延伸并包覆在所述基板夹盘的内缘上。
优选地，在所述压板的底部由所述第一加强筋围成的区域内还设有第四加强筋，所述第四加强筋与基板的非电镀区域相对设置，所述吸附件为设置在所述第四加强筋上的凹槽。
优选地，所述第四加强筋设置在所述压板的中线上。
优选地，所述真空槽凹槽的开口朝下，所述真空槽凹槽的槽底设置有气道口，所述气道口与泵连接。
本发明还提供了一种方形基板的电镀方法，包括以下步骤：
将待电镀的基板装载至基板夹盘，对压板施加第一压力，将所述压板按压在所述基板上，使所述压板与基板接触；
对吸附件内部抽气以使所述吸附件吸附所述基板；
对所述压板施加第二压力，使所述基板夹盘的内缘与基板边缘之间密封；其中，所述第二压力大于所述第一压力；
向所述吸附件内部通入气体以使所述吸附件松开所述基板；
对所述基板进行电镀。
本发明还提供了一种方形基板的电镀方法，包括以下步骤：
将待电镀基板装载至机械手上，控制所述机械手将基板装载至压板下方对应位置，使所述基板与压板接触；
对所述压板上的吸附件内部抽气以使所述吸附件吸附所述基板；
待所述机械手离开所述压板下方后，对所述压板施加压力，带动所述基板向下按压，使基板夹盘的内缘与所述基板边缘之间密封；
向所述吸附件内部通入气体以使所述吸附件松开所述基板；
对所述基板进行电镀。
如上所述，本发明提供一种方形基板的电镀卡盘及电镀方法，在压板上增加吸附件，既可以为基板提供压力，又可以通过吸附件为基板提供吸附力，通过正反双作用力使得凹形状态的基板被整平，有效地解决了大尺寸规格的方形基板产品自身的翘曲问题，方形基板的电镀均匀性得到了明显改善，产品质量和连续生产良品率都有了可靠的保证，而且结构简单、生产成本较低。
附图概述
本申请的特征、性能由以下的实施例及其附图进一步描述。
图1显示为本发明实施例一中电镀卡盘的示意图；
图2显示为本发明实施例一中压板底部的示意图；
图3显示为本发明实施例一中压板顶部的示意图；
图4显示为本发明实施例一中压板的剖面示意图；
图5显示为图4中吸盘的示意图；
图6显示为本发明实施例一中压板的仰视图；
图7显示为本发明实施例一中压板的另一剖面示意图；
图8显示为本发明实施例一中基板夹盘的剖面示意图；
图9显示为本发明实施例二中压板顶部的示意图；
图10显示为本发明实施例二中压板底部的示意图；
图11显示为本发明实施例二中压板的仰视图；
图12显示为本发明实施例二中压板的剖面示意图；
图13显示为本发明实施例三中压板顶部的示意图；
图14显示为本发明实施例三中压板底部的示意图；
图15显示为本发明实施例三中压板的仰视图；
图16显示为本发明实施例三中压板的剖面示意图。
本申请的较佳实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其它优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，虽图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的形态、数量及比例可为一种随意的改变，且其组件布局形态也可能更为复杂。另外，在多个附图中表示的相同附图标记的部分表示相同或同等的部分或部件。
实施例一
本实施例一提出一种方形基板的电镀卡盘，用于夹持基板，并在电镀时将基板w向下浸入电镀槽内进行电镀工艺。如图1和图2所示，该电镀卡盘包括压板11、基板夹盘12和吸盘13，基板夹盘12与压板11之间通过导向柱14连接，压板11与驱动机构15连接，驱动机构15控制压板11沿着导向柱14上升或者下降以实现装载及卸载基板w。基板夹盘12为中空结构，具有支撑基板w的内缘，当基板夹盘12装载基板w时，基板w的外边缘放置在基板夹盘12的内缘上。如图8所示，基板夹盘12的内缘上还设有密封件121，当压板11按压基板w时，使得基板w外缘与基板夹盘12的内缘之间密封以隔离待电镀的基板w，防止电镀液侵入基板w的非电镀区域导致镀层厚度不均，以及防止电镀液侵入并污染基板夹盘12的内部组件。如图4所示，吸盘13固定在压板11上，当基板夹盘12装载基板w时，压板11沿着导向柱14下降按压基板w，通过吸盘13对基板w的吸附力将基板w整平。
为了避免压板11的中心部分无法接触基板w，在压板11的中心部分设置至少一个吸盘13。优选地，在压板11上设置多个吸盘13，多个吸盘13在压板11上的布局形成多个同心的方形，该方形与基板w的形状一致。
如图5所示，每个吸盘13包括气孔131和吸附端132，气孔131设置在吸附端132的顶部，吸盘13穿设在压板11内，通过吸附端132吸附和整平基板w。优选地，吸附端132与压板11的底部之间的距离是可调节的，例如，吸盘13外部设有螺纹，与螺母配合调节吸附端132的位置。
每个吸盘13的气孔131均与气管连接，每条气管通过主气管与泵连接。具体地，多条气管分别与多个吸盘13的气孔131和主气管连接，主气管与泵连接。吸附端132与基板w接触后，泵通过气孔131将吸附端132内部的空气抽走，使得吸附端132内部形成真空状态。此时，吸附端132内部的气压低于吸附端132外部的气压，基板w在外部压力的作用下被吸附，吸附端132内部的真空度越高，吸附端132与基板w之间贴得越紧，通过吸附端132的吸附力将原本翘曲的基板w整平。当需要松开基板w时，泵通过气孔131向吸附端132内部通气，增加吸附端132内部的气压，使得吸附端132与基板w分离。
如图2所示，压板11底部外缘设有第一加强筋111，用于在压板11按压基板w时与基板w的边缘接触。第一加强筋111为方形，且内边长小于基板的边长。优选地，加强筋的高度略小于吸盘13放松状态下的吸附端132到压板11的距离，以使吸盘13可以接触并吸附基板w。
优选地，压板11底部由第一加强筋111围成的区域内还设有多个第二加强筋112，第二加强筋112可以是方形且均与第一加强筋111同心设置。第二加强筋112也可以均匀分布在压板11底部，将压板11底部由第一加强筋111围成的区域内等分为多个方形区域。第二加强筋112也可以设置在压板11底部由第一加强筋111围成的区域内的对角线处。当基板w为凸形翘曲时，通过压板11上的第一加强筋111和第二加强筋112即可直接将基板w按压平整。也可以设置更多的加强筋，增加压板11与基板w的接触面积，使得基板w的整平效果更好。
本实施例中，如图2、图3和图6所示，压板11底部的多个同心设置的第二加强筋112，将压板11底部由第一加强筋111围成的区域划分为一个中心方形区域和多个方环形区域，沿着每个方环形区域的外圈边长还等分设有第三加强筋113，将方环形区域均匀划分为多个区域。每个区域内设有一个吸盘13。其中，沿着第一加强筋111将相邻的方环形区域按边长等分并设置吸盘13，可以更好地保证基板w边缘一圈的吸附力分布的均匀性。在压板11的中心方形区域至少设有一个吸盘13。
具体地，如图2、图3和图6所示，本实施例中压板11被第一加强筋111和第二加强筋112由中心向边缘划分为中心方形区域A、第一方环形区域B和第二方环形区域C。中心方形区域A设有4个沿方形分布的吸盘13。第一方环形区域B被第三加强筋113等分成四个区域，每个区域内设有吸盘13，四个区域的吸盘13沿方形分布。沿着第二方环形区域C的外圈边长等分设置第三加强筋113，将第二方环形区域C划分为12个区域，同样地，这12个区域内的吸盘13沿方形分布。由于方形基板w的翘曲范围较大，在压板11边缘和中心处设置更多的吸盘13，以使压板11能够通过吸盘13与基板w之间贴得更紧，保证按压的均匀性，使得基板w的整平效果更好。
如图2和图6所示，第一加强筋111上还设有一圈齿状凸起114，当压板11按压在基板w上时，齿状凸起114的端面刚好按压基板w的边缘，使基板w与基板夹盘12内缘上的密封件121挤压。通过齿状凸起114可以将压板11和基板w之间的气体排出，防止压板11外缘与基板w太过贴合导致真空吸附，避免压板11上升时与基板w粘连。相应地，如图2和图6所示，在第二加强筋112上还均匀分布有多个凸块115，多个凸块115与上述的齿状凸起114的高度相等。当压板11按压在基板w上时，齿状凸起114和凸块115与基板w接触，避免压板11的中心区域接触不到基板w影响到整平效果。而且，还可以避免吸附端132的吸附力过大，导致基板w上部分区域出现凸形翘曲的情况。
如图7所示，在压板11内还穿设有多个弹簧销16。当压板11按压基板w时，弹簧处于收缩状态。在基板w被按压平整后，向吸附端132内部通入气体以使吸附端132松开基板w，同时结合弹簧销16的弹力顶开基板w，避免在电镀时基板w吸附在吸附端132上，吸附端132仍对基板w产生吸附力影响电镀效果。在图2、图3和图6所示的实施例中，弹簧销16设置在压板11边缘的第三加强筋113上。
如图8所示，基板夹盘12的内缘上的密封件121可以是从基板夹盘12的底部延伸并包覆在基板夹盘12的内缘上的橡胶件，保证了基板w外缘与基板夹盘12的内缘之间更好的密封性的同时还能减小压板11下压时基板夹盘12内缘一圈对基板w产生的应力，而且一体成型的设计省去了繁琐的安装动作。在基板夹盘12的内缘上还设有通孔，用于填充密封件121以将密封件121固定，保证密封件121与基板夹盘12的结构的稳定性。
实施例二
本实施例二提出一种方形基板的电镀卡盘，与实施例一相比，区别在于：压板21上的加强筋和吸盘13的布局与实施例一中不同。如图9至图12所示，压板21上仅设有第一加强筋111，当压板21按压基板w时，第一加强筋111的端面与基板w的边缘接触，并与基板夹盘12内缘上的密封件121挤压。多个吸盘13沿压板21的中线分布。
本实施例二提出的方形基板的电镀卡盘适用于双面电镀工艺，方形基板w的中线以外的区域为电镀区域，中线及周边为非电镀区域，因此仅在压板21的中线处设置吸盘13，仅在压板21的外缘设置加强筋，避免吸盘13吸附基板w的电镀区域或者压板21按压到基板w的电镀区域影响电镀效果。
如图12所示，压板21内部对应中线处还设有两个通道212，两个通道212的底部分别与两条中线上的吸盘13的气孔131连通，通道212的顶部设有气道口213，气道口213与泵连接，用于向吸盘13内通入气体以及抽真空。本实施例中设置有五个气道口213，均匀分布在压板21的中线上以及中心，保证吸盘13的对基板w的吸附力更加均匀。
本实施例的其他设置与实施例一相同，此处不再赘述。
实施例三
本实施例三提出一种方形基板的电镀卡盘，与实施例二相比，区别在于：采用凹槽312替代吸盘13以对压板31内部进行抽真空。如图13至图16所示，在压板31的中线处还设置两条呈十字形交叉的第四加强筋311，第四加强筋311的高度与第一加强筋111的高度一致。第四加强筋311上设置有凹槽312，凹槽312连接有气道口313，气道口313与泵连接，用于向凹槽312内通入气体以及抽真空。
本实施例的其他设置与实施例二相同，此处不再赘述。
实施例四
本实施例四提出一种方形基板的电镀方法，包括以下步骤：
S1：将待电镀基板装载至基板夹盘，对压板施加第一压力，将压板按压在待电镀的基板上，使压板与基板接触；
S2：对压板上的吸附件内部抽真空以使吸附件吸附基板；
S3：对压板施加第二压力，使基板夹盘的内缘与基板边缘之间密封；其中，第二压力大于第一压力；
S4：向吸附件内部通入气体以使吸附件松开基板；
S5：对基板进行电镀。
其中，吸附件可以是实施例一至二中所述的吸盘，也可以是实施例三种所述的凹槽。
实施例五
本实施例五提出一种方形基板的电镀方法，包括以下步骤：
S11：将待电镀基板装载至机械手上，控制机械手将基板装载至压板下方对应位置，使基板与压板接触；
S21：对压板上的吸附件内部抽真空以使吸附件吸附基板；
S31：待机械手离开压板下方后，对压板施加压力，带动基板向下按压，使基板夹盘的内缘与基板边缘之间密封；
S41：向吸附件内部通入气体以使吸附件松开基板；
S51：对基板进行电镀。
其中，吸附件可以是实施例一至二中记载的吸盘，也可以是实施例三种记载的凹槽。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (19)

  1. 一种方形基板的电镀卡盘，其特征在于，包括：
    基板夹盘，具有支撑基板的内缘；
    压板，设置在所述基板夹盘上方，所述基板夹盘与压板之间设有导向柱，所述压板可沿所述导向柱上升或下降，所述压板的底部设有第一加强筋，用于在所述压板按压基板时与基板的边缘接触，所述第一加强筋为方形，且内边长小于基板的边长；
    至少一个吸附件，固定在所述压板上，用于吸附基板。
  2. 根据权利要求1所述的方形基板的电镀卡盘，其特征在于，所述吸附件为吸盘，所述吸盘的一端为吸附端，另一端为气孔，所述吸盘穿设于所述压板。
  3. 根据权利要求2所述的方形基板的电镀卡盘，其特征在于，还包括泵和多个气管，所述泵通过气管与每个吸盘的气孔连接。
  4. 根据权利要求2所述的方形基板的电镀卡盘，其特征在于，多个吸盘在所述压板上的布局形成若干个同心的方形，所述方形与基板的形状一致。
  5. 根据权利要求2所述的方形基板的电镀卡盘，其特征在于，所述第一加强筋的高度小于等于所述吸盘放松状态下的吸附端到所述压板的底部的距离。
  6. 根据权利要求1所述的方形基板的电镀卡盘，其特征在于，在所述压板的底部由所述第一加强筋围成的区域内还设有多个第二加强筋，所述多个第二加强筋为方形且均与所述第一加强筋同心设置。
  7. 根据权利要求1所述的方形基板的电镀卡盘，其特征在于，在所述压板的底部由所述第一加强筋围成的区域内还设有均匀分布的第二加强筋，用于将所述第一加强筋围成的区域等分为多个区域。
  8. 根据权利要求6所述的方形基板的电镀卡盘，其特征在于，在所述多个第二加强筋将所述压板的底部划分出的方环形区域内还设有第三加强筋，所述第三加强筋将所述方环形区域沿每条边等分设置。
  9. 根据权利要求6所述的方形基板的电镀卡盘，其特征在于，所述第一加强筋上与基板接触的端面设有齿状凸起，所述第二加强筋上还均匀分布有多个凸块，所述多个凸块与所述齿状凸起的端部与所述压板的底部的距离是相等的。
  10. 根据权利要求1所述的方形基板的电镀卡盘，其特征在于，还包括至少一个弹簧销，所述弹簧销穿设在所述压板内，当所述压板按压基板时，所述弹簧销中的弹簧处于收缩状态。
  11. 根据权利要求2所述的方形基板的电镀卡盘，其特征在于，所述吸盘均匀分布在压板上，且与基板的非电镀区域相对设置。
  12. 根据权利要求11所述的方形基板的电镀卡盘，其特征在于，所述吸盘均匀分布在所述压板的中线上。
  13. 根据权利要求12所述的方形基板的电镀卡盘，其特征在于，所述压板内部对应中线处还设有两个通道，所述通道的底部与对应中线上的吸盘的气孔连通，所述通道的顶部设置有气道口，所述气道口与泵连接。
  14. 根据权利要求1所述的方形基板的电镀卡盘，其特征在于，还包括密封件，所述密封件从所述基板夹盘底部延伸并包覆在所述基板夹盘的内缘上。
  15. 根据权利要求1所述的方形基板的电镀卡盘，其特征在于，在所述压板的底部由所述第一加强筋围成的区域内还设有第四加强筋，所述第四加强筋与基板的非电镀区域相对设置，所述吸附件为设置在所述第四加强筋上的凹槽。
  16. 根据权利要求15所述的方形基板的电镀卡盘，其特征在于，所述第四加强筋设置在所述压板的中线上。
  17. 根据权利要求15所述的方形基板的电镀卡盘，其特征在于，所述凹槽的开口朝下，所述凹槽的槽底设置有气道口，所述气道口与泵连接。
  18. 一种方形基板的电镀方法，应用如权利要求1-17任一项所述的方形基板的电镀卡盘，其特征在于，包括以下步骤：
    将待电镀的基板装载至基板夹盘，对压板施加第一压力，将所述压板按压在所述基板上，使所述压板与基板接触；
    对吸附件内部抽气以使所述吸附件吸附所述基板；
    对所述压板施加第二压力，使所述基板夹盘的内缘与基板边缘之间密封；其中，所述第二压力大于所述第一压力；
    向所述吸附件内部通入气体以使所述吸附件松开所述基板；
    对所述基板进行电镀。
  19. 一种方形基板的电镀方法，应用如权利要求1-17任一项所述的方形基板的电镀卡盘，其特征在于，包括以下步骤：
    将待电镀基板装载至机械手上，控制所述机械手将基板装载至压板下方对应位置，使所述基板与压板接触；
    对所述压板上的吸附件内部抽气以使所述吸附件吸附所述基板；
    待所述机械手离开所述压板下方后，对所述压板施加压力，带动所述基板向下按压，使基板夹盘的内缘与所述基板边缘之间密封；
    向所述吸附件内部通入气体以使所述吸附件松开所述基板；
    对所述基板进行电镀。
PCT/CN2025/078254 2024-03-28 2025-02-20 方形基板的电镀卡盘及电镀方法 Pending WO2025200880A1 (zh)

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