WO2025130628A1 - 工艺腔室及其进气组件 - Google Patents

工艺腔室及其进气组件 Download PDF

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Publication number
WO2025130628A1
WO2025130628A1 PCT/CN2024/137001 CN2024137001W WO2025130628A1 WO 2025130628 A1 WO2025130628 A1 WO 2025130628A1 CN 2024137001 W CN2024137001 W CN 2024137001W WO 2025130628 A1 WO2025130628 A1 WO 2025130628A1
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Prior art keywords
cavity
air
gas
air outlet
air intake
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English (en)
French (fr)
Inventor
兰立广
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Publication of WO2025130628A1 publication Critical patent/WO2025130628A1/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present application aims to solve at least one of the technical problems existing in the prior art, and proposes a process chamber and an air inlet assembly thereof, which can achieve a simple structure and can make the air flow field distribution more uniform.
  • a gas inlet assembly for supplying gas to a process chamber, the gas inlet assembly comprising a first cavity and a second cavity, the first cavity and the second cavity are both annular, and the second cavity is disposed in the first cavity;
  • the second cavity has a uniform flow cavity extending along its circumference, and a buffer cavity is formed between the outer wall of the second cavity and the inner wall of the first cavity;
  • the first cavity has a plurality of first gas outlet holes distributed along its circumference, and the first gas outlet holes are used to connect the buffer cavity and the interior of the process chamber;
  • the second cavity has a plurality of second air outlet holes distributed along its circumference, and the second air outlet holes communicate with the flow-uniforming cavity and the buffer cavity;
  • the second cavity has an air inlet for communicating with the flow-uniform cavity.
  • the plurality of second air outlet holes are symmetrically distributed about a preset diameter of the second cavity, and the preset diameter passes through the center of the air inlet;
  • the distance between two adjacent second air outlets tends to decrease from the air inlet to a direction away from the air inlet;
  • the aperture of the second air outlet tends to increase from the air inlet to a direction away from the air inlet.
  • the plurality of first air outlet holes are evenly distributed along the circumference of the first cavity; and/or
  • a plurality of the second air outlet holes are distributed along the circumference of the second cavity to form at least one second air outlet hole group.
  • the number of the second air outlet hole groups is greater than or equal to two groups, more than two second air outlet hole groups are distributed at different positions of the second cavity in the axial direction of the second cavity.
  • the first air outlet is located on a side wall of the first cavity facing the axis of the first cavity
  • the second air outlet is located on a side wall of the second cavity facing away from the first air outlet
  • an air inlet pipe is further included, one end of the air inlet pipe is connected to the air inlet of the second cavity, the first cavity has a avoidance hole for avoiding the air inlet pipe, and the other end of the air inlet pipe passes through the avoidance hole for communicating with an air source;
  • the outer wall of the air intake pipe is sealed and connected to the avoidance hole.
  • it further includes a plurality of injection conduits connected to the first cavity, wherein the plurality of injection conduits correspond one-to-one to the positions of the plurality of first air outlets; the injection conduits are used to limit the flow direction of the gas output from the first air outlets.
  • the diameter of the second air outlet hole is greater than or equal to 0.1 mm.
  • the distance between the outer wall of the second cavity and the inner wall of the first cavity is greater than or equal to 0.1 mm.
  • the injection conduit includes a connecting portion and an output portion distributed along its axial direction, the connecting portion is located in the first air outlet, the output portion is located outside the first air outlet, and the output portion is used to communicate with the process chamber; the outer diameter of the output portion is larger than the outer diameter of the connecting portion to form a limiting surface that fits with the outer wall of the first cavity.
  • a side wall of the injection conduit is provided with an injection hole.
  • the present application also provides a process chamber, comprising a chamber body and any one of the above-mentioned air inlet components;
  • the air inlet assembly is fixed to the cavity wall of the chamber body, and the plurality of first air outlet holes are communicated with the interior of the chamber body, and the plurality of first air outlet holes are used to provide gas to the interior of the chamber body.
  • the air intake component is annular as a whole, with a simple structure, easy to process and disassemble, and the first cavity and the second cavity are annular, with low processing difficulty, thus ensuring high processing accuracy and avoiding the influence of processing errors on the uniformity of gas distribution.
  • the uniform flow cavity can make the gas fully diffuse along its circumference, thereby improving the uniformity of gas distribution in the circumference of the second cavity; combined with the use of multiple second air outlets, the gas can enter the buffer cavity from multiple positions on the circumference of the buffer cavity, thereby improving the uniformity of gas intake in the buffer cavity, and combined with the use of the buffer cavity to diffuse the gas along its circumference, secondary uniform flow can be achieved, thereby improving the uniformity of gas distribution in the circumference of the first cavity, and then the uniformity of the gas flow field in the process chamber can be improved, thereby improving the consistency and yield of processing.
  • the present application also provides a process chamber including the above-mentioned air inlet assembly, and having the above-mentioned advantages.
  • Fig. 1 is a cross-sectional view along line A-A in Fig. 2;
  • FIG2 is a side view of an air intake assembly provided in a specific embodiment of the present application.
  • FIG3 is a schematic structural diagram of an air intake assembly provided in a specific embodiment of the present application.
  • FIG4 is an exploded view of an air intake assembly provided in a specific embodiment of the present application.
  • FIG5 is a cross-sectional view of a first cavity of an air intake assembly provided in a specific embodiment of the present application.
  • FIG6 is a top view of a second cavity of an air intake assembly provided in a specific embodiment of the present application.
  • FIG7 is an enlarged view of region I in FIG1 ;
  • FIG8 is a schematic diagram of the structure of the jet duct
  • FIG9 is a partial enlarged view of an air intake assembly provided in another specific embodiment of the present application.
  • FIG. 10 is a schematic structural diagram of a process chamber provided in a specific embodiment of the present application.
  • the reference numerals in Figures 1 to 10 are: 100, first cavity; 101, installation cavity; 102, avoidance hole; 103, buffer cavity; 104, first air outlet; 105, first cavity sealing plate; 110, injection duct; 111, output part; 112, connecting part; 113, injection hole; 200, second cavity; 201, uniform flow cavity; 202, air inlet; 203, second air outlet; 204, air inlet pipe; 301, top air inlet; 302, first RF coil; 303, second RF coil; 304, air inlet channel; 305, tray; 306, base; 307, exhaust port.
  • the gas inlet assembly provided in the present application is used to transport gas to the interior of the process chamber to ensure that the gas flow field is evenly distributed inside the process chamber.
  • the gas inlet assembly includes a first cavity 100 and a second cavity 200, the first cavity 100 and the second cavity 200 are both annular, and the second cavity 200 is arranged in the first cavity 100.
  • the first cavity 100 for example, has an installation cavity 101 extending along its circumference, and the installation cavity 101 is annular.
  • the second cavity 200 is arranged in the installation cavity 101 and extends along the circumference of the installation cavity 101.
  • the first cavity 100 has an opening for the second cavity 200 to pass through, and the second cavity 200 is installed into the installation cavity 101 from the opening and then the opening is closed.
  • the first cavity 100 includes a first cavity body and a first cavity sealing plate 105 arranged at the bottom of the first cavity body.
  • the bottom of the first cavity body has an opening for the second cavity 200 to pass through.
  • the first cavity sealing plate 105 is used to seal the opening, so that after the second cavity 200 is installed in the installation cavity 101, the installation cavity 101 can be sealed.
  • the second cavity 200 has a uniform flow cavity 201 extending along its circumference, and the outer wall of the second cavity 200 is at a certain distance from the inner wall of the first cavity 100, so that a buffer cavity 103 is formed between the inner wall of the second cavity 200 and the inner wall of the first cavity 100, and the buffer cavity 103 is the space between the outer wall of the second cavity 200 and the inner wall of the first cavity 100 of the installation cavity 101.
  • the second cavity 200 has an air inlet 202 for connecting to the uniform flow cavity 201, and an air inlet pipe 204 for conveying gas is connected to the uniform flow cavity 201 through the air inlet 202.
  • the second cavity 200 has a plurality of second air outlets 203 distributed along its circumference, and each second air outlet 203 connects the uniform flow cavity 201 and the buffer cavity 103.
  • the gas enters the uniform flow chamber 201 from the air inlet 202, and diffuses in the uniform flow chamber 201 along the circumference of the second cavity 200.
  • the gas in the uniform flow chamber 201 then enters the buffer chamber 103 from the plurality of second air outlets 203 distributed along the circumference of the second cavity 200.
  • the uniform flow chamber 201 enables the gas to be fully diffused along its circumference, thereby improving the uniformity of the gas distribution in the circumference of the second cavity 200; the plurality of second air outlets 203 are combined to allow the gas to enter the buffer chamber 103 from a plurality of positions in the circumference of the buffer chamber 103, thereby improving the uniformity of the gas intake in the buffer chamber 103; and the buffer chamber 103 is combined to diffuse the gas in its circumference, thereby achieving secondary uniform flow, thereby improving the uniformity of the gas distribution in the circumference of the first cavity 100.
  • the first cavity 100 has a plurality of first gas outlet holes 104 distributed along its circumference, and the first gas outlet holes 104 are used to connect the buffer cavity 103 and the interior of the process chamber.
  • the gas in the buffer cavity 103 enters the interior of the process chamber through each of the first gas outlet holes 104.
  • the distribution of the first gas outlet holes 104 can be set as required, so that the gas in the buffer cavity 103 can evenly enter the interior of the process chamber.
  • the air intake assembly has a simple structure, as shown in FIG. 2 and FIG. 3 , and its overall structure is annular, and the first cavity 100 and the second cavity 200 are annular, and the processing difficulty is low, so that a high processing accuracy can be guaranteed, and the uniformity of gas distribution is avoided from being affected by processing errors.
  • the air intake assembly provided in the embodiment of the present application is easy to disassemble and maintain due to its simple structure, and also reduces the requirements for the processing accuracy of the first air outlet 104 and the second air outlet 203.
  • the gas After the gas enters the uniform flow chamber 201 from the air inlet 202, it diffuses to both sides of the air inlet 202 along the circumference of the second cavity 200.
  • the preset diameter of the second cavity 200 (as shown by the dotted line in FIG. 6 ) passes through the center of the air inlet 202, and the diffusion speed of the gas on both sides of the preset diameter is substantially the same.
  • the plurality of second air outlets 203 are symmetrically distributed about the preset diameter of the second cavity 200, so that the time for the gas to reach the two symmetrical second air outlets 203 is substantially the same, and the gas enters the buffer cavity 103 symmetrically on both sides of the preset diameter, thereby improving the uniformity of the air intake of the buffer cavity 103.
  • the gas inlet 202 As the gas flows away from the gas inlet 202, part of the gas enters the buffer cavity 103 from the second gas outlet 203, and the pressure of the remaining gas gradually decreases. As the distance from the gas inlet 202 increases, the gas outlet area per unit length of the second cavity 200 gradually increases, thereby compensating for the uneven gas distribution caused by the decrease in gas pressure and improving the uniformity of the gas flow when entering the buffer cavity 103.
  • the distance between two adjacent second gas outlet holes 203 decreases from the gas inlet 202 to the direction away from the gas inlet 202. That is, as the distance from the gas inlet 202 increases, the distribution of the second gas outlet holes 203 gradually becomes denser. The denser the distribution of the second gas outlet holes 203, the larger the gas outlet area of the corresponding area, so that the gas outlet area per unit length in the circumferential direction of the second cavity 200 can be gradually increased, thereby ensuring the uniformity of gas distribution.
  • the aperture of the second gas outlet 203 increases from the gas inlet 202 to the direction away from the gas inlet 202 in the circumferential direction of the second cavity 200. That is, as the distance from the gas inlet 202 increases, the aperture of the second gas outlet 203 gradually increases.
  • the larger the aperture of the second gas outlet 203 the larger the gas outlet area of the corresponding region, so that the gas outlet area per unit length in the circumferential direction of the second cavity 200 can be gradually increased, thereby ensuring the uniformity of gas distribution.
  • the plurality of first gas outlet holes 104 are evenly distributed along the circumference of the first cavity 100 , and the apertures of the first gas outlet holes 104 are equal.
  • the even distribution of the plurality of first gas outlet holes 104 can improve the uniformity of gas distribution in the process chamber.
  • the plurality of second gas outlet holes 203 are distributed along the circumference of the second cavity 200 to form at least one second gas outlet hole group, and the number of the second gas outlet hole groups may be one group or more than two groups. When the number of the second gas outlet hole groups is greater than or equal to two groups, the two or more second gas outlet hole groups are distributed at different positions of the second cavity 200 in the axial direction of the second cavity 200. The plurality of second gas outlet hole groups can further improve the uniformity of gas distribution in the buffer cavity 103, thereby improving the uniformity of gas distribution in the process chamber.
  • the first gas outlet 104 is located on the side wall of the first cavity 100 facing the central axis of the first cavity 100, so that the gas can pass through each first gas outlet 104 and enter the interior of the process chamber from the inner side of the first cavity 100.
  • the second gas outlet 203 is located on the side wall of the second cavity 200 away from the first gas outlet 104. After passing through the second gas outlet 203, the gas needs to bypass the outer wall of the second cavity 200 and finally enter the interior of the process chamber from the first gas outlet 104.
  • the distribution method of the first gas outlet 104 and the second gas outlet 203 can prolong the transportation time of the gas in the buffer cavity 103, thereby further allowing the gas to fully diffuse in the buffer cavity 103 and improving the uniformity of the gas distribution in the buffer cavity 103.
  • the aperture of the second air outlet 203 is greater than or equal to 0.1 mm.
  • the aperture of the second air outlet 203 is relatively large, which can reduce the resistance of the gas entering the buffer chamber 3, ensure the smooth flow of the process gas, and thus ensure the uniform flow effect of the air intake component.
  • the aperture of the second air outlet 203 is relatively large, and even if there are certain errors in the processing process, it can still ensure that the second air outlet 203 has a high processing accuracy, thereby reducing the processing difficulty of the second air outlet 203.
  • the aperture of the second air outlet 203 can also be set according to the needs of the user, and is not limited here.
  • the distance between the outer wall of the second cavity 200 and the inner wall of the first cavity 100 is greater than or equal to 0.1 mm.
  • the first cavity 100 and the second cavity 200 can be coaxially arranged, and the distance between the outer wall of the second cavity 200 and the inner wall of the first cavity 100 at various positions is approximately equal.
  • the distance between the outer wall of the second cavity 200 and the inner wall of the first cavity 100 is relatively large, which can not only reduce the difficulty of processing, but also provide sufficient space for the gas to diffuse in the buffer cavity 103, reduce the resistance of the gas to flow in the buffer cavity 103, and thus improve the uniformity of the gas distribution in the buffer cavity 103.
  • the distance between the outer wall of the second cavity 200 and the inner wall of the first cavity 100 can also be set according to the needs of the user, which is not limited here.
  • the air intake assembly further includes an air intake pipe 204, one end of which is connected to the air inlet 202 of the second cavity 200.
  • the air intake pipe 204 may be perpendicular to the plane where the second cavity 200 is located.
  • the first cavity 100 has a avoidance hole 102 for avoiding the air intake pipe 204, and the avoidance hole 102 and the air intake pipe 204 are arranged correspondingly in the direction perpendicular to the plane where the second cavity 200 is located.
  • the other end of the air intake pipe 204 passes through the avoidance hole 102 for communicating with a gas source, and the gas source includes, for example, an air intake pipeline for supplying factory gas.
  • Each injection conduit 110 is used to limit the flow direction of the gas output from the first gas outlet 104. Further, in some embodiments, each injection conduit 110 may be at the same preset angle with the horizontal plane, and the value range of the preset angle is greater than -90° and less than +90°. Each injection conduit 110 may extend radially along the first cavity 100 to avoid the formation of a circulation in the process chamber. The injection conduits 110 synchronously output gas, so that the gas can quickly fill the interior of the process chamber, thereby improving the uniformity of gas distribution in the radial direction of the process chamber.

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Abstract

本申请提供一种工艺腔室及其进气组件，属于半导体制造领域，进气组件包括第一腔体和第二腔体，二者均呈环状，第二腔体设置在第一腔体内；第二腔体内具有匀流腔，第二腔体的外壁与第一腔体的内壁间形成缓冲腔；第一腔体具有沿其周向分布的多个第一出气孔，第一出气孔用于连通缓冲腔和工艺腔室的内部；第二腔体具有多个第二出气孔，第二出气孔连通匀流腔和缓冲腔；第二腔体具有用于连通匀流腔的进气口。进气组件整体呈环状，结构简单，便于加工和拆装；而且，可以实现二次匀流，从而提高了气体在第一腔体周向上分布的均匀性，进而可以提高工艺腔室中的气流场的均匀性，进而提高加工的一致性及良率。

Description

工艺腔室及其进气组件 技术领域
本申请涉及半导体制造领域，具体地，涉及一种工艺腔室及其进气组件。
背景技术
半导体集成电路不断向更高的器件集成度、更高的运算效率及更低的运行功耗方向发展。随着芯片单元特征尺寸的不断缩小，对刻蚀工序、膜层沉积工艺、图形化等制程的要求越来越高。在半导体晶圆加工的过程中，单片晶圆内的加工均匀性直接影响了芯片加工的一致性及良率，因此本领域内对加工均匀性的要求也越来越高。
刻蚀及镀膜工艺过程对等离子体的分布和工艺均匀性的要求越来越高，而腔室内的气流场分布的均匀性直接影响着等离子体的分布。为获得均匀的等离子体分布，等离子化学气相沉积设备及刻蚀设备一般采用腔室顶部进气、腔室边缘进气，或同时采用两种进气方式向腔室通入反应气体，并均设计相应的匀流腔以使工艺气体在腔室内的均匀分布。
现有的匀流腔往往结构复杂，对加工精度要求较高。且一旦安装完成就极难拆卸清洗。与此同时，为达到更多腔室进气口的设计，进一步加大了结构的复杂度及加工难度，难以有效保证气流场的均匀性。结构的复杂度加大了产生颗粒的风险，影响了芯片良率。
因此，如何提供一种结构简单、气流场均匀性好的进气组件是本领域技术人员急需解决的技术问题。
发明内容
本申请旨在至少解决现有技术中存在的技术问题之一，提出了一种工艺腔室及其进气组件，其能够实现结构简单，且能够使气流场分布更加均匀。
为实现本申请的目的而提供一种进气组件，用于向工艺腔室提供气体，所述进气组件包括第一腔体和第二腔体，所述第一腔体和所述第二腔体均呈环状，所述第二腔体设置在所述第一腔体内；
所述第二腔体内具有沿其周向延伸的匀流腔，所述第二腔体的外壁与所述第一腔体的内壁间形成缓冲腔；
所述第一腔体具有沿其周向分布的多个第一出气孔，所述第一出气孔用于连通所述缓冲腔和所述工艺腔室的内部；
所述第二腔体具有沿其周向分布的多个第二出气孔，所述第二出气孔连通所述匀流腔和所述缓冲腔；
所述第二腔体具有用于连通所述匀流腔的进气口。
在一些实施例中，多个所述第二出气孔关于所述第二腔体的预设直径对称分布，所述预设直径经过所述进气口的中心；
在所述第二腔体周向上，由所述进气口向远离所述进气口的方向，相邻两个所述第二出气孔之间的距离呈减小趋势；和/或
在所述第二腔体周向上，由所述进气口向远离所述进气口的方向，所述第二出气孔的孔径呈增大趋势。
在一些实施例中，多个所述第一出气孔沿所述第一腔体的周向均匀分布；和/或
多个所述第二出气孔沿所述第二腔体的周向分布形成至少一组第二出气孔组，当所述第二出气孔组的数量大于或等于两组时，两组以上的所述第二出气孔组分布在所述第二腔体在所述第二腔体的轴向上的不同位置处。
在一些实施例中，所述第一出气孔位于所述第一腔体朝向所述第一腔体轴线的侧壁上，所述第二出气孔位于所述第二腔体背离所述第一出气孔的侧壁上。
在一些实施例中，还包括进气管，所述进气管的一端连接在所述第二腔体的所述进气口处，所述第一腔体具有用于避让所述进气管的避让孔，所述进气管的另一端穿过所述避让孔，用于与气源连通；
所述进气管的外壁与所述避让孔密封连接。
在一些实施例中，还包括与所述第一腔体连接的多个喷射导管，所述多个喷射导管与所述多个第一出气孔的位置一一对应；所述喷射导管用于限制所述第一出气孔输出的所述气体的流动方向。
在一些实施例中，所述第二出气孔的孔径大于或等于0.1mm。
在一些实施例中，所述第二腔体的外壁和第一腔体的内壁之间的距离大于或等于0.1mm。
在一些实施例中，所述喷射导管包括沿其轴向分布的连接部和输出部，所述连接部位于所述第一出气孔中，所述输出部位于所述第一出气孔外，所述输出部用于与所述工艺腔室连通；所述输出部的外径大于所述连接部的外径，以形成与所述第一腔体外壁贴合的限位面。
在一些实施例中，所述喷射导管的侧壁设有喷射孔。
本申请还提供了一种工艺腔室，包括腔室本体和上述任意一种所述的进气组件；
所述进气组件与所述腔室本体的腔壁固定，且所述多个第一出气孔与所述腔室本体的内部连通，所述多个第一出气孔用于向所述腔室本体的内部提供气体。
本申请具有以下有益效果：
本申请提供的进气组件，用于向工艺腔室提供气体，进气组件包括第一腔体和第二腔体，第一腔体和第二腔体均呈环状，第二腔体设置在第一腔体内；第二腔体内具有沿其周向延伸的匀流腔，第二腔体的外壁与第一腔体的内壁间形成缓冲腔；第一腔体具有沿其周向分布的多个第一出气孔，第一出气孔用于连通缓冲腔和工艺腔室的内部；第二腔体具有沿其周向分布的多个第二出气孔，第二出气孔连通匀流腔和缓冲腔；第二腔体具有用于连通匀流腔的进气口。
进气组件整体呈环状，结构简单，便于加工和拆装，而且第一腔体和第二腔体呈环状，加工难度低，因而能够保证较高的加工精度，避免因加工误差影响气体分布的均匀性。匀流腔能够使气体沿其周向充分扩散，从而提高了气体在第二腔体周向上分布的均匀性；结合利用多个第二出气孔，可以使气体分别从缓冲腔周向上的多个位置进入缓冲腔中，从而提高了缓冲腔进气的均匀性，再结合利用缓冲腔使气体沿其周向扩散，可以实现二次匀流，从而提高了气体在第一腔体周向上分布的均匀性，进而可以提高工艺腔室中的气流场的均匀性，进而提高加工的一致性及良率。
本申请还提供了一种包括上述进气组件的工艺腔室，并具有上述优点。
附图说明
图1为图2中沿A-A线的剖视图；
图2为本申请一种具体实施方式所提供的进气组件的侧视图；
图3为本申请一种具体实施方式所提供的进气组件的结构示意图；
图4为本申请一种具体实施方式所提供的进气组件的分解图；
图5为本申请一种具体实施方式所提供的进气组件的第一腔体的剖视图；
图6为本申请一种具体实施方式所提供的进气组件的第二腔体的俯视图；
图7为图1中I区域的放大图；
图8为喷气导管的结构示意图；
图9为本申请另一种具体实施方式所提供的进气组件的局部放大图；
图10为本申请一种具体实施方式所提供的工艺腔室的结构示意图。
其中，图1至图10中的附图标记为：
100、第一腔体；101、安装腔；102、避让孔；103、缓冲腔；104、第
一出气孔；105、第一腔体密封板；110、喷射导管；111、输出部；112、连接部；113、喷射孔；200、第二腔体；201、匀流腔；202、进气口；203、第二出气孔；204、进气管；301、顶部进气孔；302、第一射频线圈；303、第二射频线圈；304、进气通道；305、托盘；306、基座；307、排气口。
具体实施方式
为使本领域的技术人员更好地理解本申请的技术方案，下面结合附图来对本申请提供的工艺腔室及其进气组件进行详细描述。
本申请所提供的进气组件，用于向工艺腔室内部输送气体，保证气体的流场在工艺腔室内部均匀分布。如图1所示，进气组件包括第一腔体100和第二腔体200，第一腔体100和第二腔体200均呈环状，第二腔体200设置在第一腔体100内，具体地，第一腔体100例如具有沿其周向延伸的安装腔101，安装腔101呈环状，第二腔体200设置在安装腔101内，且沿安装腔101的周向延伸设置。装配过程中，第一腔体100具有供第二腔体200通过的开口，第二腔体200由开口处装入安装腔101后再将该开口封闭。具体地，如图4所示，第一腔体100包括第一腔体主体和设置于该第一腔体主体底部的第一腔体密封板105，第一腔体主体的底部具有供第二腔体200通过的开口，第一腔体密封板105用于密封该开口，从而可以在将第二腔体200安装至安装腔101后，对该安装腔101进行密封。
第二腔体200内具有沿其周向延伸的匀流腔201，第二腔体200的外壁与第一腔体100的内壁之间相距一定距离，从而使第二腔体200和第一腔体100的内壁之间形成缓冲腔103，该缓冲腔103即为安装腔101的位于第二腔体200外壁和第一腔体100的内壁之间的空间。如图4和图6所示，第二腔体200具有用于连通匀流腔201的进气口202，用于输送气体的进气管204通过进气口202与匀流腔201连通。第二腔体200具有沿其周向分布的多个第二出气孔203，各第二出气孔203连通匀流腔201和缓冲腔103。气体由进气口202进入匀流腔201内，并在匀流腔201中沿第二腔体200的周向扩散，匀流腔201中的气体再由沿第二腔体200周向分布的多个第二出气孔203进入缓冲腔103。匀流腔201能够使气体沿其周向充分扩散，从而提高了气体在第二腔体200周向上分布的均匀性；结合利用多个第二出气孔203，可以使气体分别从缓冲腔103周向上的多个位置进入缓冲腔103中，从而提高了缓冲腔103进气的均匀性，再结合利用缓冲腔103使气体沿其周向扩散，可以实现二次匀流，从而提高了气体在第一腔体100周向上分布的均匀性。
第一腔体100具有沿其周向分布的多个第一出气孔104，第一出气孔104用于连通缓冲腔103和工艺腔室内部。缓冲腔103内的气体穿过各第一出气孔104进入工艺腔室内部。第一出气孔104的分布方式可根据需要进行设置，使缓冲腔103内的气体能够均匀地进入工艺腔室内部。
本实施例中，进气组件结构简单，如图2和图3所示，其整体结构呈环状，第一腔体100和第二腔体200呈环状，加工难度低，因而能够保证较高的加工精度，避免因加工误差影响气体分布的均匀性。本申请实施例提供的进气组件，由于结构简单而便于拆装和维护，同时也降低了对第一出气孔104和第二出气孔203加工精度的要求。
在此基础上，通过将匀流腔201、多个第二出气孔203和缓冲腔103的结合使用，可以实现二次匀流，从而提高了气体在第一腔体100周向上分布的均匀性，进而可以提高工艺腔室中的气流场的均匀性，进而提高加工的一致性及良率。
气体由进气口202进入匀流腔201后，沿第二腔体200的周向向进气口202的两侧扩散，第二腔体200的预设直径(如图6中的虚线所示)经过进气口202的中心，气体在该预设直径两侧的扩散速度大致相同。在一些实施例中，多个第二出气孔203关于第二腔体200的预设直径对称分布，因而气体到达相互对称的两个第二出气孔203的时间大致相同，气体在预设直径的两侧对称地进入缓冲腔103内，因而能够提高缓冲腔103进气的均匀性。
随着气体向远离进气口202的方向流动，部分气体由第二出气孔203进入缓冲腔103内，剩余的气体的压强也逐渐降低。随着与进气口202的距离增加，第二腔体200周向单位长度内的出气面积逐渐增加，从而弥补气体压强降低造成的气体分布不均的问题，提高了气体进入缓冲腔103时的流量均匀性。
在一些实施例中，如图6所示，在第二腔体200周向上，由进气口202向远离进气口202的方向，相邻两个第二出气孔203之间的距离呈减小趋势。即随着与进气口202的距离增加，第二出气孔203的分布逐渐紧密。第二出气孔203分布越紧密，对应区域的出气面积越大，从而可以实现第二腔体200周向单位长度内的出气面积逐渐增加，进而可以保证气体分布的均匀性。
在一些实施例中，在第二腔体200周向上，由进气口202向远离进气口202的方向，第二出气孔203的孔径呈增大趋势。即随着与进气口202的距离增加，第二出气孔203的孔径逐渐增大。第二出气孔203的孔径越大，对应区域的出气面积越大，从而可以实现第二腔体200周向单位长度内的出气面积逐渐增加，进而可以保证气体分布的均匀性。
在一些实施例中，如图5所示，多个第一出气孔104沿第一腔体100的周向均匀分布，各个第一出气孔104的孔径相等。多个第一出气孔104均匀分布能够提高气体在工艺腔室内分布的均匀性。
进一步地，在一些实施例中，多个第二出气孔203沿第二腔体200的周向分布形成至少一组第二出气孔组，第二出气孔组的数量可为一组或两组以上。当第二出气孔组的数量大于等于两组时，两组以上的第二出气孔组分布在第二腔体200在第二腔体200的轴向上的不同位置处。多组第二出气孔组能够进一步提高气体在缓冲腔103内分布的均匀性，进而提高气体在工艺腔室内分布的均匀性。
在一些实施例中，如图3和图4所示，第一出气孔104位于第一腔体100朝向第一腔体100中轴线的侧壁上，从而气体可以穿过各第一出气孔104自第一腔体100内周一侧进入工艺腔室内部。如图4和图7所示，第二出气孔203位于第二腔体200背离第一出气孔104的侧壁上。气体穿过第二出气孔203后需要绕过第二腔体200的外侧壁最终由第一出气孔104进入工艺腔室的内部。第一出气孔104和第二出气孔203的分布方式能够延长气体在缓冲腔103中的输运时间，从而进一步使气体在缓冲腔103中充分扩散，提高气体在缓冲腔103内分布的均匀性。
在一些实施例中，第二出气孔203的孔径大于或等于0.1mm，第二出气孔203的孔径相对较大，能够降低气体进入缓冲腔3的阻力，保证工艺气体流动顺畅，从而保证进气组件的匀流效果。另外，第二出气孔203的孔径较大，即使加工过程中存在一定误差，仍能够保证第二出气孔203具有较高的加工精度，因而降低了第二出气孔203的加工难度。当然，第二出气孔203的孔径也可根据用户的需要进行设定，在此不做限定。
在一些实施例中，第二腔体200的外壁和第一腔体100的内壁之间的距离大于或等于0.1mm。如图7所示，第一腔体100和第二腔体200可同轴设置，第二腔体200各个位置处的外壁和第一腔体100的内壁之间距离大致相等。第二腔体200的外壁和第一腔体100的内壁之间的距离较大，不仅能够降低加工难度，而且能够为气体在缓冲腔103中扩散提供足够的空间，降低气体在缓冲腔103内流动的阻力，从而提高气体在缓冲腔103内分布的均匀性。当然，第二腔体200的外壁和第一腔体100的内壁之间的距离也可根据用户的需要进行设定，在此不做限定。
在一些实施例中，如图4所示，进气组件还包括进气管204，该进气管204的一端连接在第二腔体200的进气口202处。进气管204可垂直第二腔体200所在的平面。第一腔体100具有用于避让进气管204的避让孔102，避让孔102与进气管204在垂直第二腔体200所在的平面的方向上对应设置，进气管204的另一端穿过避让孔102，用于与气源连通，该气源例如包括厂务气体供应的进气管路。进气管204的外壁与避让孔102密封连接，避免气体从进气组件中泄漏。另外，避让孔102可设置定位槽，进气管204的外壁可设置定位凸起，定位槽和定位凸起可相互配合对第二腔体200进行定位，保证第二腔体200与第一腔体100同心设置。避让孔102与进气管204固定连接还可在垂直第一腔体100所在平面的方向上对第二腔体200进行定位。
进一步地，在一些实施例中，安装腔101内还可设置支撑结构，用于支撑第二腔体200，实现第二腔体200与第一腔体100同轴设置。支撑结构可为支撑柱、支撑凸起等。支撑结构的形状和分布方式可根据用户的需要进行设定，在此不做限定。
气体穿过第一出气孔104进入工艺腔室的内部。第一出气孔104的方向影响了气体的流动方向。然而，第一腔体100的侧壁厚度较薄，因而导致第一出气孔104对气体流动方向的限制较少，气体进入工艺腔室内部后自由扩散，容易形成湍流，造成气体分布不均。为了解决该问题，在一些实施例中，如图8和图9所示，进气组件还包括多个喷射导管110，该喷射导管110与第一腔体100连接，多个喷射导管110与多个第一出气孔104的位置一一对应。各个喷射导管110用于限制第一出气孔104输出的气体的流动方向。进一步地，在一些实施例中，各个喷射导管110可与水平面成相同的预设角度，预设角度的取值范围为大于-90°，且小于+90°。各个喷射导管110可沿第一腔体100的径向延伸，避免在工艺腔室内形成环流。各个喷射导管110同步输出气体，能够使气体快速充满工艺腔室内部，从而提高工艺腔室径向上气体分布的均匀性。
进一步地，在一些实施例中，如图8所示，喷射导管110包括沿其轴向分布的连接部112和输出部111。连接部112位于第一出气孔104中，输出部111位于第一出气孔104外，输出部111用于与工艺腔室连通，用于向工艺腔室内部输送气体。输出部111的外径大于连接部112的外径，以在连接部112和输出部111之间形成限位面。安装过程中，连接部112穿入第一出气孔104中，通过焊接或过盈配合等方式与第一出气孔104密封连接，限位面与第一腔体100的外壁贴合，形成限位。如图9所示，连接部112的长度通常不大于第一腔体100的壁厚，从而避免连接部112影响缓冲腔103内气体的流动。在一些实施例中，连接部112和输出部111的内径相同，以保证气体顺畅通过。当然，在实际应用中，根据具体需要，输出部111内径也可设计为大于或小于连接部112的内径。当然，喷射导管110的形状也可根据用户的需要进行设置，在此不做限定。
气体由喷射导管110喷出后流速较高，气体流动过程中遇到阻力后会改变流动方向，进入喷射导管110之间的位置，形成湍流。为了解决该问题，在一些实施例中，输出部111的侧壁设有喷射孔113，喷射孔113沿第一腔体100的周向贯穿输出部111的侧壁。喷射孔113将输出部111的内部和外部连通，气体在输出部111内流动时流速较高，气体可穿过喷射孔113进入相邻的两个喷射导管110之间，从而提高相邻两个喷射导管110之间的气体压力。由于相邻两个喷射导管110之间的气体压力升高，喷射导管110喷出的气体在遇到阻力后，无法进入相邻两个喷射导管110之间，从而防止了气体湍流的形成。需要说明的是，本申请实施例并不局限于设置于输出部111的侧壁，如果喷射导管110还设置有图中未示出的其他结构，则喷射孔113还可以设置于该结构上。
本申请还提供了一种工艺腔室，包括腔室本体和上述任意一种实施例所提供的进气组件。进气组件与腔室本体的腔壁固定，且多个第一出气孔104与腔室本体的内部连通，多个第一出气孔104用于向腔室本体的内部提供气体。
如图10所示的实施例中，腔室本体的顶部设有顶部进气孔301和围绕顶部进气孔301设置的第一射频线圈302，腔室本体的侧壁设有第二射频线圈303。腔室本体内设有基座306，基座306用于支撑晶圆，基座306上设有托盘305，晶圆可放置在托盘305上。腔室本体的底部设有排气口307。进气组件位于第二射频线圈303的下方，且进气组件的高度大于基座306上表面的高度。腔室本体的侧壁还设有进气通道304，进气通道304的一端与进气组件的进气管204连通，进气通道304的另一端用于与气源连通。进气组件和顶部进气孔301配合向工艺腔室内输送气体，第一射频线圈302和第二射频线圈303将气体电离形成等离子体。等离子体用于加工晶圆，工艺生成的副产物气体和未参与反应的气体可由排气口307排出，避免影响工艺进行。进气组件能够使气体在工艺腔室内分布更加均匀，从而提高产品良率。当然，工艺腔室也可为其他结构，在此不做限定。
进一步地，在一些实施例中，腔室本体可以包括第一腔室本体和位于第一腔室本体下方的第二腔室本体，进气组件设置在第一腔室本体和第二腔室本体之间。腔室本体采用分体式结构方便进气组件的安装，用户也可根据需要设置进气组件的安装方式，在此不做限定。
可以理解的是，以上实施方式仅仅是为了说明本申请的原理而采用的示例性实施方式，然而本申请并不局限于此。对于本领域内的普通技术人员而言，在不脱离本申请的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本申请的保护范围。

Claims (11)

  1. 一种进气组件，用于向工艺腔室提供气体，其特征在于，所述进气组件包括第一腔体和第二腔体，所述第一腔体和所述第二腔体均呈环状，所述第二腔体设置在所述第一腔体内；
    所述第二腔体内具有沿其周向延伸的匀流腔，所述第二腔体的外壁与所述第一腔体的内壁间形成缓冲腔；
    所述第一腔体具有沿其周向分布的多个第一出气孔，所述第一出气孔用于连通所述缓冲腔和所述工艺腔室的内部；
    所述第二腔体具有沿其周向分布的多个第二出气孔，所述第二出气孔连通所述匀流腔和所述缓冲腔；
    所述第二腔体具有用于连通所述匀流腔的进气口。
  2. 根据权利要求1所述的进气组件，其特征在于，多个所述第二出气孔关于所述第二腔体的预设直径对称分布，所述预设直径经过所述进气口的中心；
    在所述第二腔体周向上，由所述进气口向远离所述进气口的方向，相邻两个所述第二出气孔之间的距离呈减小趋势；和/或
    在所述第二腔体周向上，由所述进气口向远离所述进气口的方向，所述第二出气孔的孔径呈增大趋势。
  3. 根据权利要求1所述的进气组件，其特征在于，多个所述第一出气孔沿所述第一腔体的周向均匀分布；和/或
    多个所述第二出气孔沿所述第二腔体的周向分布形成至少一组第二出气孔组，当所述第二出气孔组的数量大于或等于两组时，两组以上的所述第二出气孔组分布在所述第二腔体在所述第二腔体的轴向上的不同位置处。
  4. 根据权利要求1所述的进气组件，其特征在于，所述第一出气孔位于所述第一腔体朝向所述第一腔体的轴线的侧壁上，所述第二出气孔位于所述第二腔体背离所述第一出气孔的侧壁上。
  5. 根据权利要求1所述的进气组件，其特征在于，还包括进气管，所述进气管的一端连接在所述第二腔体的所述进气口处，所述第一腔体具有用于避让所述进气管的避让孔，所述进气管的另一端穿过所述避让孔，用于与气源连通；
    所述进气管的外壁与所述避让孔密封连接。
  6. 根据权利要求1至5任意一项所述的进气组件，其特征在于，还包括与所述第一腔体连接的多个喷射导管，所述多个喷射导管与所述多个第一出气孔的位置一一对应；所述喷射导管用于限制所述第一出气孔输出的所述气体的流动方向。
  7. 根据权利要求1至5任意一项所述的进气组件，其特征在于，所述第二出气孔的孔径大于或等于0.1mm。
  8. 根据权利要求1至5任意一项所述的进气组件，其特征在于，所述第二腔体的外壁和第一腔体的内壁之间的距离大于或等于0.1mm。
  9. 根据权利要求6所述的进气组件，其特征在于，所述喷射导管包括沿其轴向分布的连接部和输出部，所述连接部位于所述第一出气孔中，所述输出部位于所述第一出气孔外，所述输出部用于与所述工艺腔室连通；所述输出部的外径大于所述连接部的外径，以形成与所述第一腔体外壁贴合的限位面。
  10. 根据权利要求6所述的进气组件，其特征在于，所述喷射导管的侧壁设有喷射孔。
  11. 一种工艺腔室，其特征在于，包括腔室本体和权利要求1至10任意一项所述的进气组件；
    所述进气组件与所述腔室本体的腔壁固定，且所述多个第一出气孔与所述腔室本体的内部连通，所述多个第一出气孔用于向所述腔室本体的内部提供气体。
PCT/CN2024/137001 2023-12-22 2024-12-05 工艺腔室及其进气组件 Pending WO2025130628A1 (zh)

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