WO2025098147A1 - 用于半导体工艺腔室的辅助控温装置及半导体工艺腔室 - Google Patents

用于半导体工艺腔室的辅助控温装置及半导体工艺腔室 Download PDF

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Publication number
WO2025098147A1
WO2025098147A1 PCT/CN2024/126963 CN2024126963W WO2025098147A1 WO 2025098147 A1 WO2025098147 A1 WO 2025098147A1 CN 2024126963 W CN2024126963 W CN 2024126963W WO 2025098147 A1 WO2025098147 A1 WO 2025098147A1
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Prior art keywords
heat
control device
temperature control
assembly
heat exchange
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PCT/CN2024/126963
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English (en)
French (fr)
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WO2025098147A9 (zh
Inventor
裴立新
黄其伟
张庆山
张先鹏
谷强
刘浩文
宋健
孟凌云
刘星
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Publication of WO2025098147A1 publication Critical patent/WO2025098147A1/zh
Publication of WO2025098147A9 publication Critical patent/WO2025098147A9/zh
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof

Definitions

  • the present application relates to the field of semiconductor manufacturing, and in particular, to an auxiliary temperature control device for a semiconductor process chamber and a semiconductor process chamber.
  • Physical vapor deposition technology is a type of metal or non-metal thin film technology widely used in the semiconductor industry, and has a very large application space in this industry. It mainly introduces process gas into the process chamber, generates a strong potential difference in the process chamber, ionizes the process gas into plasma under the action of the potential difference, and then controls the generated magnetic field to make the plasma bombard the target material, and the bombarded target atoms are deposited on the wafer surface to form the target film.
  • the process chamber in the prior art has poor temperature control capability for the peripheral area of the wafer, and the wafer temperature cannot meet the standard during the process, resulting in poor wafer quality.
  • the present application aims to at least solve the problem in the prior art that the process chamber has poor temperature control capability over the process area, the wafer temperature cannot meet the standard during the process, and the wafer quality is poor.
  • An auxiliary temperature control device for a semiconductor process chamber and a semiconductor process chamber are proposed.
  • an auxiliary temperature control device for a process chamber comprising: a heat conducting component, which is used to be fixedly connected to the semiconductor process chamber to exchange heat with the process kit in the semiconductor process chamber; a cooling channel, which is arranged in the heat conducting component, and the cooling channel is used to pass a cooling fluid to cool the heat conducting component; and a heating component, which is arranged in the heat conducting component and is used to heat the heat conducting component.
  • the thermally conductive component comprises:
  • a first heat conducting member used to be connected to a carrier of the semiconductor process chamber to perform heat exchange with a deposition ring in the process kit;
  • the cooling channel comprises:
  • a first cooling channel is arranged in the first heat conducting member
  • the heating assembly comprises:
  • the first heating element is arranged in the first heat conducting element.
  • the thermally conductive component comprises:
  • a second heat conducting member used to be connected to the inner wall of the chamber body of the semiconductor process chamber to perform heat exchange with the liner assembly in the process kit;
  • the cooling channel comprises:
  • a second cooling channel is disposed in the second heat conducting member
  • the heating assembly comprises:
  • the second heating element is arranged in the second heat conducting element.
  • the first heat conducting member comprises:
  • a first heat exchange portion having a first heat exchange surface for affixing to the deposition ring
  • the first connection portion is connected to the inner circumference of the first heat exchange portion, and the first connection portion is used to be connected to the supporting device.
  • a first annular protrusion and a first annular groove are provided on the first heat exchange portion, the first annular protrusion is located on the outer peripheral side of the first heat exchange surface, the first annular groove is located between the first heat exchange surface and the first annular protrusion, and the first annular protrusion and the first annular groove are used to cooperate with the gap of the lining component of the semiconductor process chamber to form a maze channel.
  • the second heat-conducting member has a second heat exchange portion and a second connecting portion
  • the second heat exchange portion has a second heat exchange surface for fitting with the liner assembly
  • the second connecting portion is connected to the outer peripheral side of the second heat exchange portion
  • the second connecting portion is used to fit with the chamber itself.
  • the inner wall of the body is connected.
  • the auxiliary temperature control device further includes:
  • the first conductive member is used to be electrically connected to the first heat conductive member and the supporting device respectively.
  • the auxiliary temperature control device further includes:
  • the second conductive member is used to be electrically connected to the second heat conductive member and the lining assembly respectively.
  • the auxiliary temperature control device further includes a connecting wire.
  • the connecting wire is electrically connected to the first heat conductor and the second heat conductor respectively, and the second heat conductor is also used to electrically connect to the inner wall of the chamber body, so that the supporting device, the first heat conductor, the second heat conductor, the lining assembly and the inner wall of the chamber body are electrically connected to each other.
  • the auxiliary temperature control device further includes:
  • the temperature measuring component is arranged on the heat conducting component to detect the temperature of the process kit.
  • a semiconductor process chamber comprising: a chamber body; a carrier device and a process kit arranged in the chamber body; the above-mentioned auxiliary temperature control device, wherein the auxiliary temperature control device is fixedly connected to at least one of the chamber body and/or the carrier device to adjust the temperature of the process kit.
  • the process kit includes: a lining assembly and a deposition ring, wherein the lining assembly is connected to the chamber body, and the deposition ring is arranged around the supporting device;
  • the auxiliary temperature control device includes: a first heat conductor and/or a second heat conductor, wherein the first heat conductor is connected to the supporting device, and the first heat conductor is bonded to the deposition ring; the second heat conductor is connected to the inner wall of the chamber body, and the second heat conductor is bonded to the lining assembly.
  • the outer peripheral side of the deposition ring has an annular mounting portion, the mounting portion extends to the outside of the supporting device, and the first heat conductive member is attached to the mounting portion.
  • the lining assembly includes: a side wall portion extending perpendicular to the supporting device The direction setting of the bearing surface;
  • the bottom wall portion is connected to the side wall portion, the bottom wall portion is arranged in a direction parallel to the bearing surface, and the second heat conducting member is attached to the bottom wall portion.
  • the outer circumference of the deposition ring has a mounting portion, the mounting portion extends to the outside of the carrying device, and the mounting portion has a first side facing the carrying surface and a second side facing away from the carrying surface;
  • An annular slope is provided on the first side of the assembly portion, and the height of the annular slope gradually increases in the direction from the inside to the outside of the deposition ring;
  • the liner assembly further comprises:
  • the shielding portion is connected to the inner peripheral wall of the bottom wall portion and is located above the annular inclined surface.
  • a first channel is formed between the inner surface of the shielding portion facing the annular slope and the annular slope; a second channel connected to the first channel is formed between the inner circumferential wall of the bottom wall portion and the outer circumferential wall of the assembly portion; and the first channel and the second channel together form a part of a maze channel.
  • the auxiliary temperature control device provided in the present application, by providing a heat-conducting component and providing a cooling channel and a heating component in the heat-conducting component, can adjust the temperature of the heat-conducting component through the cooling channel and the heating component, so that heat exchange is performed between the heat-conducting component and the process kit, thereby achieving the purpose of adjusting the temperature of the process kit, thereby preventing the temperature of the process kit from being too high or too low, avoiding affecting the wafer, and improving the product quality of the wafer.
  • the semiconductor process chamber provided in the present application can prevent the temperature of the process kit from being too high or too low by adopting the above-mentioned auxiliary temperature control device provided in the present application, avoid affecting the wafer, and improve the product quality of the wafer.
  • FIG1 is a schematic structural diagram of a semiconductor process chamber in the prior art
  • FIG2 is a schematic diagram of heat transfer direction in a semiconductor process chamber in the prior art
  • FIG3 is a schematic structural diagram of a first heat-conducting member of an auxiliary temperature control device according to an embodiment of the present application
  • FIG4 is a schematic structural diagram of a second heat conducting member of the auxiliary temperature control device according to an embodiment of the present application.
  • FIG5 is a schematic diagram of an auxiliary temperature control device according to an embodiment of the present application used in a semiconductor process chamber scenario
  • FIG6 is a partial enlarged view of portion A in FIG5 ;
  • FIG7 is a partial enlarged view of portion B in FIG6 ;
  • FIG8 is a schematic diagram of the heat transfer direction of the semiconductor process chamber in a high power sputtering process according to an embodiment of the present application.
  • FIG9 is a schematic diagram of the heat transfer direction of a semiconductor process chamber in a low-power sputtering process according to an embodiment of the present application.
  • a process chamber for semiconductor processing as shown in FIG1 includes: a chamber body 1, a carrier 2 disposed in the chamber body 1, and a process kit including a liner assembly 3, a deposition ring 4, and a shielding ring 5.
  • the gas source 6 in FIG1 is used to transport process gas into the chamber body 1.
  • a target material 7 is provided on the top of the chamber body 1; the liner assembly 3 is located on the outer peripheral side of the carrier 2; the carrier 2 is used to place wafers, and the deposition ring 4 is disposed between the carrier 2 and the liner assembly 3.
  • the carrier 2, the deposition ring 4, the liner assembly 3, and the target material 7 divide the interior of the chamber body 1 into a process zone 8 and a non-process zone 9.
  • the process zone 8 is used for semiconductor processing, and the gas source 6 is connected to the non-process zone 9.
  • the carrier device 2 needs to move upward, and at the same time drive the deposition ring 4 to move upward. After reaching a certain height, the deposition ring 4 contacts the shielding ring 5 and continues to move upward, driving the shielding ring 5 to separate upward from the liner component 3 to form a flow gap. After the gas transported by the gas source 6 enters the non-processing zone 9, it enters the process zone 8 through the flow gap for plasma sputtering process.
  • the gas After the gas enters the process zone 8, it is excited into plasma.
  • the plasma bombards the target material 7 under the constraint of the magnetic field, and the bombarded target atoms are deposited on the wafer surface to form a target film.
  • the part sputtered onto the wafer to form a film is the effective sputtering part
  • the part sputtered onto the liner component 3, the shielding ring 5, and the deposition ring 4 is the ineffective sputtering part.
  • the inventors have found that: as shown in FIG2, a large amount of process heat generated by the plasma during the sputtering process will be transferred to the liner component 3, the deposition ring 4 and the shielding ring 5 along the direction 1 and the direction 2.
  • the process kit inside causes the temperature of the liner component 3, the shielding ring 5, the deposition ring 4, etc. to rise.
  • the heat dissipation efficiency of the deposition ring 4 in direction 3 is poor; since the shielding ring 5 has no contact with the liner component 3 during the process, the heat transfer efficiency of the shielding ring 5 in direction 4 in Figure 2 is also very poor; since the non-process interval 9 is in a vacuum state, the efficiency of heat transfer from the liner component 3 to the non-process interval 9 along direction 5 is also extremely low; and since the bottom wall of the liner component 3 is farther from the side wall of the chamber body 1 than the side wall of the liner component 3, the heat transfer efficiency of the liner component 3 along direction 6 is extremely poor.
  • the heat dissipation effect of the liner component 3, the shielding ring 5, and the deposition ring 4 in all directions is extremely poor, resulting in an increasingly high accumulated temperature on the process kit. Therefore, the process kit including the liner component 3, the deposition ring 4, and the shielding ring 5 will cause the wafer to radiate heat along direction 7, resulting in serious thermal stress defects in wafer film formation. That is to say, in the related technology, during the high-power (22KW ⁇ 55KW) continuous sputtering process of aluminum and other types of thin films, there is a problem of serious thermal stress defects in wafer film formation due to insufficient cooling and temperature control capabilities of the process kit including the liner assembly 3, deposition ring 4 and shielding ring 5.
  • the process kit including the liner assembly 3, deposition ring 4 and shielding ring 5 has not yet accumulated much heat, and the thermal radiation to the edge of the wafer is small; as the sputtering time continues to increase, the process kit accumulates a large amount of process heat, and the thermal radiation to the edge of the wafer gradually increases; this causes a large difference in the film quality of the first few wafers (low process kit thermal radiation) and the subsequent wafers (strong process thermal radiation), forming the first wafer effect, resulting in wafer quality. Instability problem.
  • the process kit including the liner assembly 3, deposition ring 4 and shielding ring 5 in the related art not only has poor cooling and temperature control capabilities, but also has no heating temperature control capabilities, which causes the temperature of the process kit to change during the continuous process. This change causes a large temperature difference between the first few wafers and the subsequent wafers of the process kit, resulting in a more obvious first-wafer effect on the film quality.
  • the process kit including the liner assembly 3, deposition ring 4 and shielding ring 5 in the related art performs poorly in cooling and heating, can only be heated passively, and the temperature is uncontrollable.
  • the liner assembly 3, deposition ring 4 and shielding ring 5 in the process kit are mostly metal parts.
  • the metal parts absorb a large amount of impurities such as water vapor and oxygen. If the adsorbed impurities are not removed in time after the maintenance and recovery of the chamber is completed, they will precipitate in a high temperature environment, accompanied by plasma sputtering, forming thin film defects. The more residual impurities, the more serious the film defects formed.
  • the relevant technology uses a halogen lamp added to the bottom side wall of the chamber to irradiate and heat the lining component 3, the shielding ring 5, and the deposition ring 4 after maintenance to remove impurities.
  • a halogen lamp added to the bottom side wall of the chamber to irradiate and heat the lining component 3, the shielding ring 5, and the deposition ring 4 after maintenance to remove impurities.
  • the heating capacity of the lining component 3, the shielding ring 5, and the deposition ring 4 is not obvious, it is difficult to reach a high temperature, and impurities cannot be effectively removed.
  • the shielding ring 5, the deposition ring 4 and the insulating part of the carrier 2 are at a suspended potential.
  • the chamber body 1 is at zero potential, which will form a large potential difference with the negative potential of the carrier 2, causing the process gas to glow in the non-process interval 9, causing the coating contamination of the chamber body 1.
  • the present application discloses an auxiliary temperature control device for a semiconductor process chamber.
  • the auxiliary temperature control device includes a heat conduction component 10, a cooling channel 20 and a heating component 30.
  • the heat-conducting component 10 is used to be fixedly connected to the semiconductor process chamber so as to exchange heat with the process kit in the semiconductor process chamber; the cooling channel 20 and the heating component 30 are both arranged in the heat-conducting component 10, wherein the cooling channel 20 is used to pass a cooling fluid to cool the heat-conducting component 10, and the cooling fluid includes, for example, a cooling liquid or a cooling gas.
  • the heating component 30 is used to heat the heat-conducting component 10.
  • the auxiliary temperature control device can cool or heat the heat-conducting component 10 through the cooling channel 20 and the heating component 30, so that a temperature difference is formed between the heat-conducting component 10 and the process kit, thereby realizing heat exchange with the process kit and achieving the purpose of adjusting the temperature of the process kit.
  • the process kit in the present application includes a deposition ring 60 and a liner assembly 70, which are arranged in a semiconductor process chamber.
  • the process kit is used to cooperate with a carrier device 50 that is also arranged inside the semiconductor process chamber for placing wafers, thereby dividing the interior of the semiconductor process chamber into a process area and a non-process area, wherein the process area is used to perform semiconductor processes.
  • a cooling fluid can be introduced into the cooling channel 20 to lower the temperature of the heat-conducting component 10 through the cooling fluid, so that a temperature difference is formed between the heat-conducting component 10 and the process kit.
  • the heat in the process kit will be transferred to the heat-conducting component 10, and the heat-conducting component 10 will transfer the heat to the cooling fluid and take the heat away through the flowing cooling fluid, thereby achieving the purpose of lowering the temperature of the process kit.
  • the heat conducting component 10 can be heated by the heating component 30, so that a temperature difference is formed between the heat conducting component 10 and the process kit after the temperature is increased, and the heat in the heat conducting component 10 is transferred to the process kit.
  • the heating component 30 continues to heat the heat conducting component 10
  • the heat in the heat conducting component 10 is continuously transferred to the process kit, thereby achieving the purpose of increasing the temperature of the process kit.
  • the auxiliary temperature control device can adjust the temperature of the heat-conducting component 10 by setting a heat-conducting component 10 and setting a cooling channel 20 and a heating component 30 in the heat-conducting component 10, so that heat exchange can be performed between the heat-conducting component 10 and the process kit to achieve the purpose of adjusting the temperature of the process kit, thereby preventing the temperature of the process kit from being too high or too low, and avoiding damage to the wafer. Have an impact and improve the product quality of wafers.
  • the auxiliary temperature control device is applied to a semiconductor process chamber (e.g., a physical magnetron chamber), see FIG5 , the semiconductor process chamber comprises: a chamber body 80 and a carrier 50 disposed in the chamber body 80, and a process kit is disposed in the chamber body 80.
  • the process kit comprises a deposition ring 60 and a liner assembly 70, and the auxiliary temperature control device is used to adjust the temperature of the deposition ring 60 and the liner assembly 70.
  • the carrier device 50 cooperates with the process kit to divide the interior of the chamber body 80 into an upper chamber 81 and a lower chamber 82.
  • the upper chamber 81 is a space for processing the wafer, that is, the process zone. Therefore, in order to avoid contamination of the wafer, the auxiliary temperature control devices are all arranged in the lower chamber 82 (that is, the non-process zone).
  • the heat conducting component 10 includes: a first heat conducting member 10a; the cooling channel 20 includes: a first cooling channel 20a; and the heating component 30 includes: a first heating member 30a.
  • the first heat conducting member 10a is used to be connected to the carrier 50 and fit with the deposition ring 60 in the process kit so as to exchange heat with the deposition ring 60.
  • the first cooling channel 20a and the first heating member 30a are both arranged in the first heat conducting member 10a.
  • the first heat conducting member 10a can be cooled or heated, so that a temperature difference is formed between the first heat conducting member 10a and the deposition ring 60, thereby achieving heat exchange with the deposition ring 60.
  • the temperature of the deposition ring 60 continues to rise. After the temperature rises, the deposition ring 60 will continuously transfer heat to the first heat conductor 10a, and then the heat will be taken away by the cooling fluid in the first cooling channel 20a, thereby reducing the temperature of the deposition ring 60, effectively preventing heat from accumulating on the deposition ring 60, preventing the deposition ring 60 from being too high, and effectively ensuring the life of the deposition ring 60. At the same time, it can also prevent the deposition ring 60 from radiating heat back to the wafer, thereby improving the process performance of the wafer. It can also keep the process temperature relatively stable during the process. Avoid the first-wafer effect and ensure the stability of wafer product quality.
  • the deposition ring 60 can be indirectly heated by the first heating element 30a, so that the deposition ring 60 radiates heat to the wafer, thereby quickly reaching the temperature required for the process, avoiding the first-piece effect, and ensuring the stability of the wafer product quality.
  • the first heating element 30a cooperates with the halogen lamp to quickly heat the deposition ring 60, so that the deposition ring 60 can quickly precipitate the adsorbed impurities, thereby improving the maintenance recovery speed and quality of the deposition ring 60.
  • the deposition ring 60 can be continuously heated to prevent the nitride on the deposition ring 60 from falling off due to low-temperature hardening, thereby avoiding process defects, improving particle control capabilities, and improving wafer product quality.
  • the first heat-conducting member 10a includes: an annular first heat exchange portion 11a and a first connecting portion 12a.
  • the annular first heat exchange portion 11a has a first heat exchange surface 111a for bonding with the deposition ring 60.
  • the first heat exchange surface 111a can be parallel to the bearing surface (a plane for supporting the wafer) of the bearing device 50.
  • a heat-conducting layer is provided on the first heat exchange surface 111a.
  • the first heat exchange surface 111a is bonded to the deposition ring 60 through the heat-conducting layer to improve the efficiency of heat transfer.
  • the first cooling channel 20a and the first heating member 30a are located in the first heat exchange portion 11a.
  • the first cooling channel 20a and the first heating member 30a are both arranged along the circumference of the first heat exchange portion 11a.
  • the first heating member 30a is located between the first heat exchange surface 111a and the first cooling channel 20a.
  • the first heating element 30a can be closer to the deposition ring 60 during heating, reducing heat loss during heat transfer and improving heating efficiency.
  • the first heating element 30a is, for example, a heating wire.
  • the first connection portion 12a is connected to the inner circumference of the first heat exchange portion 11a (the left side of the first heat exchange portion 11a in FIG3 ), and the first connection portion 12a is used to connect with the carrier device 50.
  • the first connection portion 12a By providing the first connection portion 12a, the first heat exchange portion 11a is connected and fixed to the carrier device 50 through the first connection portion 12a, so that the first heat exchange surface 111a of the first heat exchange portion 11a is attached to the deposition ring 60.
  • the upper surface of the first connection portion 12a and the inner circumference of the first portion 11a form an inner annular groove, and the outer circumferential wall of the carrier device 50 is located inside the inner annular groove.
  • the first heat exchange portion 11a is also provided with a first annular protrusion 112a and a first annular groove 113a.
  • the first annular protrusion 112a is located on the outer peripheral side of the first heat exchange surface 111a (on the right side of the first heat exchange surface 111a in FIG3 ), and the first annular groove 113a is located between the first heat exchange surface 111a and the first annular protrusion 112a.
  • the first annular protrusion 112a and the first annular groove 113a are used to form a labyrinth passage 90 with a clearance fit with the liner assembly 70 (see FIG6 ).
  • the lower chamber 82 can be prevented from being contaminated by the plasma in the upper chamber 81 diffusing and leaking to the lower chamber 82 through the gap between the first annular groove 113a and the liner assembly 70.
  • the heat conducting component 10 further includes: a second heat conducting member 10b; the cooling channel 20 further includes: a second cooling channel 20b; and the heating component 30 further includes: a second heating member 30b.
  • the second heat conducting member 10b is used to be connected to the inner wall of the chamber body 80 and to fit with the lining component 70 so as to perform heat exchange with the lining component 70.
  • the second cooling channel 20b and the second heating member 30b are both arranged in the second heat conducting member 10b.
  • the second heat conducting member 10b can be cooled or heated, so that a temperature difference is formed between the second heat conducting member 10b and the lining component 70, thereby achieving heat exchange with the lining component 70.
  • the temperature of the lining component 70 continues to rise. After the temperature rises, the lining component 70 will continuously transfer heat to the second heat conductor 10b, and then the heat will be taken away by the cooling fluid in the second cooling channel 20b, thereby reducing the temperature of the lining component 70, effectively preventing heat from accumulating on the lining component 70, preventing the lining component 70 from being too high, and effectively ensuring the life of the lining component 70. At the same time, it can also prevent the lining component 70 from radiating heat back to the wafer, thereby improving the process performance of the wafer. Moreover, the process temperature can be kept relatively stable during the process, avoiding the first-piece effect, and ensuring the stability of the wafer product quality.
  • the liner assembly 70 can be indirectly heated by the second heating element 30b, so that the liner assembly 70 radiates heat to the wafer, thereby quickly reaching the temperature required for the process. It can also avoid the first-piece effect and ensure the stability of wafer product quality.
  • the second heating element 30b cooperates with the halogen lamp to quickly heat the lining component 70, so that the lining component 70 can quickly precipitate the adsorbed impurities, improving the speed and quality of maintenance and recovery of the lining component 70.
  • the lining component 70 can be continuously heated to prevent the nitride on the lining component 70 from falling off due to low-temperature hardening, thereby avoiding process defects, improving particle control capabilities, and improving wafer product quality.
  • the second heat-conducting member 10b has an annular second heat exchange portion 11b and a second connecting portion 12b.
  • the second heat exchange portion 11b has a second heat exchange surface 111b for bonding with the liner assembly 70.
  • the second heat exchange surface 111b is parallel to the bonding surface of the liner assembly 70.
  • a heat-conducting layer is also provided on the second heat exchange surface 111b.
  • the second heat exchange surface 111b is bonded to the liner assembly 70 through the heat-conducting layer to improve the efficiency of heat transfer.
  • the second cooling channel 20b and the second heating member 30b are located in the second heat exchange portion 11b.
  • the second cooling channel 20b and the second heating member 30b are both arranged in the circumferential direction.
  • the second heating member 30b is located between the second heat exchange surface 111b and the second cooling channel 20b. Similarly, by arranging the second heating element 30b between the second cooling channel 20b and the second heat exchange surface 111b, the second heating element 30b can be closer to the liner assembly 70 when heating, reducing heat loss during heat transfer and improving the heating effect.
  • the second heating element 30b is, for example, a heating wire.
  • the second connection part 12b is connected to the outer peripheral side of the second heat exchange part 11b (the right side in FIG. 4 ), and the second connection part 12b is used to connect with the inner wall of the chamber body 80. Referring to FIG. 6 , the second connection part 12b is penetrated and fixedly connected to the inner wall of the chamber body 80, so that the second heat exchange surface 111b is fitted with the liner assembly 70. At the same time, a sealed connection is formed between the second connection part 12b and the inner wall of the chamber body 80 to ensure that the interior of the chamber body 80 is in a vacuum state.
  • part of the second connection portion 12 b has extended to the outside of the chamber body 80. Therefore, the part of the second connection portion 12 b located outside the chamber body 80 can be grounded, so that the entire second heat-conducting member 10 b is at zero potential. Since the chamber body 80 is in direct contact with the second connection portion 12 b, the inner wall of the chamber body 80 can also be at zero potential at the same time. This can avoid the phenomenon that the lower chamber 82 is glowing due to the excessive potential difference between the second heat conducting member 10 b and the inner wall of the chamber body 80 .
  • the auxiliary temperature control device further comprises a first conductive member 40a and a second conductive member 40b.
  • the first conductive member 40a is electrically connected to the first heat conducting member 10a and the bearing device 50 respectively
  • the second conductive member 40b is electrically connected to the second heat conducting member 10b and the lining assembly 70 respectively.
  • the first end of the first conductive member 40a is connected to the first connecting portion 12a, and the second end of the first conductive member 40a protrudes from the upper surface of the first connecting portion 12a.
  • the second end of the first conductive member 40a is fixedly connected to the bearing device 50, so that the bearing device 50 is fixedly connected to the first heat-conducting member 10a through the first conductive member 40a.
  • the first conductive member 40a is made of metal, which can electrically connect the first heat-conducting member 10a and the bearing device 50.
  • the auxiliary temperature control device provided by the present application is provided with a first conductive member 40a, and the first conductive member 40a is used to fix and electrically connect the first heat conductive member 10a and the carrier device 50, so that on the basis of ensuring the stability of the fit between the first heat conductive member 10a and the deposition ring 60, the first conductive member 40a and the carrier device 50 can also be equipotential. After the carrier device 50 is grounded, the first conductive member 40a is also at zero potential.
  • the first conductive member 40a can use a silver-plated bolt, and the first heat conductive member 10a and the carrier device 50 are fixed and electrically connected by the silver-plated bolt, thereby improving the reliability of the connection between the first heat conductive member 10a and the carrier device 50.
  • this is not restrictive, and any component that can simultaneously play the role of fixing and electrically connecting is within the protection scope of this application.
  • a mounting groove is provided on the second heat exchange surface 111b, and the first end of the second conductive member 40b is located in the mounting groove and fixedly connected to the inner wall of the mounting groove.
  • the second end of the second conductive member 40b protrudes from the second heat exchange surface 111b.
  • the second end of the second conductive member 40b is abutted against the surface of the lining component 70, and the second conductive member 40b made of metal makes electrical conduction between the second conductive member 40b and the lining component 70.
  • the second thermal conductive member 10b and the inner wall of the chamber body 80 are also electrically conductive, thereby making electrical conduction between the second thermal conductive member 10b, the interior of the chamber body 80 and the lining component 70.
  • the auxiliary temperature control device provided by the present application is provided with a second conductive member 40b, and the second conductive member 40b is used to realize the electrical connection between the second conductive member 10b and the lining assembly 70, so that the second conductive member 40b, the inner wall of the chamber body 80 and the lining assembly 70 are at the same potential.
  • the second conductive member 10b is grounded, the second conductive member 40b, the inner wall of the chamber body 80 and the lining assembly 70 are all at zero potential, effectively preventing the second conductive member 40b and the lining assembly 70 and the inner wall of the chamber body 80 from generating a large potential difference, avoiding the ignition phenomenon in the lower chamber 82 to cause coating pollution, and improving the stability of the equipment.
  • Zero potential and equal potential state not affected by plasma bombardment and leakage radio frequency.
  • the second end of the second conductive member 40b is only slightly higher than the second heat exchange surface 111b to avoid affecting the fit between the second heat exchange surface 111b and the lining assembly 70; in addition, the second heat exchange surface 111b needs to avoid the position of the second conductive member 40b to avoid affecting the electrical conduction effect between the second conductive member 40b and the lining assembly 70.
  • a connecting wire (not shown in the figure) is further provided between the first heat conductor 10a and the second heat conductor 10b, and the two ends of the connecting wire are respectively connected to the first heat conductor 10a and the second heat conductor 10b, so as to realize electrical conduction between the first heat conductor 10a and the second heat conductor 10b.
  • the carrying device 50, the first heat conductor 10a, the second heat conductor 10b, the lining assembly 70 and the inner wall of the chamber body 80 located in the lower chamber 82 are all at zero potential, which effectively prevents the occurrence of ignition in the lower chamber 82. Therefore, the lower chamber 82 will not be affected by plasma bombardment and leakage radio frequency, which avoids the lower chamber 82 from being contaminated by the coating, and improves the stability and life of the equipment. life.
  • a refrigerant pipe 110 is further arranged between the first heat conductive member 10a and the second heat conductive member 10b, and one end of the refrigerant pipe 110 is connected to the first cooling channel 20a, and the second end of the refrigerant pipe 110 is connected to the second cooling channel 20b, so that the first cooling channel 20a and the second cooling channel 20b are connected to each other, so that the first cooling channel 20a and the second cooling channel 20b can share a water inlet pipeline and a water outlet pipeline (not shown in the figure).
  • first heating element 30a and the second heating element 30b can be electrically connected through a wire (not shown in the figure), so that the first heating element 30a and the second heating element 30b share a set of circuits for power supply and control, thereby simplifying the overall structure, reducing the risk of gas leakage inside the chamber body 80, and reducing the modification cost.
  • the first temperature measuring component 100a is embedded in the first heat exchange portion 11a of the first heat conductive component 10a, and one end of the first temperature measuring component 100a extends to the position of the first heat exchange surface 111a, and the heat conductive layer on the first heat exchange surface 111a covers the first temperature measuring component 100a.
  • the first temperature measuring component 100a can also be abutted against the deposition ring 60 through the heat conductive layer to measure the temperature of the deposition ring 60.
  • the heat conductive layer covers the first temperature measuring component 100a, that is, heat is transferred between the first temperature measuring component 100a and the deposition ring 60 through the heat conductive layer, so that the temperature detected by the first temperature measuring component 100a can be more accurate and timely.
  • the second temperature measuring member 100 b is embedded in the second heat exchange portion 11 b of the second heat conducting member 10 b, one end of the second temperature measuring member 100 b extends to the second heat exchange surface 111 b, and the heat conducting layer on the second heat exchange surface 111 b covers the second temperature measuring member 100 b.
  • the second temperature measuring member 100 b can also be abutted against the liner assembly 70 through the heat conducting layer to measure the temperature of the liner assembly 70.
  • the heat conducting layer covers the second On the temperature measuring element 100b, that is, heat is transferred between the second temperature measuring element 100b and the lining assembly 70 through the heat conductive layer, so that the temperature detected by the second temperature measuring element 100b can be more accurate and timely.
  • the auxiliary temperature control device can monitor the temperature of the deposition ring 60 and the lining component 70 in real time by setting a temperature measuring component, and obtain real-time feedback, so that the temperature of the deposition ring 60 and the lining component 70 can be actively adjusted according to the feedback temperature, forming a closed-loop temperature adjustment, so that the process temperature is in the optimal temperature range, reducing the fluctuation of the process temperature, avoiding the first-piece effect, and ensuring the stability of the wafer product quality.
  • the first temperature measuring component 100a and the second temperature measuring component 100b are both temperature measuring thermocouples, but this is not restrictive. As long as it is a device that can measure temperature, it is within the protection scope of the present application without violating the working principle and application concept of the present application.
  • a semiconductor process chamber comprising: a chamber body 80, a carrier device 50, a process kit and the above-mentioned auxiliary temperature control device.
  • the carrier 50 and the process kit are both disposed in the chamber body 80.
  • the auxiliary temperature control device is fixedly connected to at least one of the chamber body 80 and the carrier 50 to adjust the temperature of the process kit.
  • the semiconductor process chamber provided in the present application can adjust the temperature of the process kit by providing an auxiliary temperature control device, thereby preventing the temperature of the process kit from being too high or too low and affecting the quality of the wafer, thereby improving the product quality of the wafer.
  • the carrier 50 is arranged in the chamber body 80 in a liftable manner, and the carrier 50 can be matched or disengaged with the liner assembly 70 by lifting.
  • the carrier 50 rises to a position that matches the liner assembly 70.
  • the carrier 50 and the liner assembly 70 divide the interior of the chamber body 80 into an upper chamber 81 and a lower chamber 82.
  • the upper chamber 81 is a process area for sputtering the wafer
  • the lower chamber 82 is a non-process area.
  • the auxiliary temperature control device is arranged in the lower chamber 82.
  • the process kit includes: a liner assembly 70 and a deposition ring 60 , wherein the liner assembly 70 is connected to the chamber body 80 , and the deposition ring 60 is arranged around the carrier 50 , and when the carrier 50 rises After reaching the position of matching with the liner assembly 70, the deposition ring 60 is loosely matched with the liner assembly 70.
  • the auxiliary temperature control device includes: a first heat conductive member 10a and a second heat conductive member 10b, wherein the first heat conductive member 10a is connected to the carrier device 50 and fits with the deposition ring 60; the second heat conductive member 10b is connected to the inner wall of the chamber body 80 and fits with the liner assembly 70.
  • the outer circumference of the deposition ring 60 has an annular mounting portion 61
  • the mounting portion 61 extends to the outer side of the carrier 50
  • the first heat conductor 10a is attached to the mounting portion 61.
  • the deposition ring 60 includes a body portion 62 and a mounting portion 61 disposed on the outer circumference of the body portion 62
  • the mounting portion 61 is an annular structure.
  • the mounting portion 61 extends to the outer side of the carrier 50 in a direction parallel to the carrier surface and is located between the carrier 50 and the liner assembly 70, and the mounting portion 61 has a first side facing the carrier surface and a second side facing away from the carrier surface.
  • the mounting portion 61 has an annular slope 611, and the height of the annular slope 611 gradually increases in the direction from the inside to the outside (from left to right in FIG7 ) of the deposition ring 60.
  • a second annular protrusion 612 is provided on the second side of the mounting portion 61, and the second annular protrusion 612 is located on the outer peripheral side of the mounting portion 61, and the first heat conducting member 10a is attached to the second side of the mounting portion 61.
  • the lining assembly 70 includes: a side wall portion 71 and a bottom wall portion 72.
  • the side wall portion 71 is arranged in a direction perpendicular to the bearing surface of the bearing device 50; the bottom wall portion 72 is connected to the side wall portion 71, and the bottom wall portion 72 is arranged in a direction parallel to the bearing surface, and the bottom wall portion 72 is, for example, an annular structure, the inner peripheral wall of the bottom wall portion 72 is in clearance fit with the outer side of the assembly portion 61, the outer side of the bottom wall portion 72 is connected to the side wall portion 71, and the second heat conducting member 10 b is attached to the bottom wall portion 72.
  • the liner assembly 70 further includes a shielding portion 73, which is an annular structure connected to the inner circumferential wall of the bottom wall portion 72.
  • the shielding portion 73 is located above the annular slope 611, and the inner surface of the shielding portion 73 facing the annular slope 611 is parallel to the annular slope 611, and a first channel 91 is formed between the inner surface of the shielding portion 73 and the annular slope 611.
  • the inner circumferential wall of the bottom wall portion 72 is parallel to the outer circumferential wall of the assembly portion 61, and a second channel 92 connected to the first channel 91 is formed between the inner circumferential wall of the bottom wall portion 72 and the outer circumferential wall of the assembly portion 61.
  • the connected first channel 91 and second channel 92 together form a first channel 91. Become a part of the maze passage 90.
  • the first heat-conducting member 10a includes: an annular first heat exchange portion 11a and a first connecting portion 12a. As shown in FIG7 , the first heat exchange portion 11a has a first heat exchange surface 111a that is attached to the second side of the assembly portion 61. The first heat exchange portion 11a is also provided with a first annular protrusion 112a and a first annular groove 113a.
  • the first annular protrusion 112a is located on the outer peripheral side of the first heat exchange surface 111a (on the right side of the first heat exchange surface 111a in FIG7 ), the first annular groove 113a is located between the first heat exchange surface 111a and the first annular protrusion 112a, and the second annular protrusion 612 is located in the first annular groove 113a.
  • a second annular groove 721 is provided on the bottom wall portion 72.
  • the first annular protrusion 112a is inserted into the second annular groove 721 and is loosely fitted, so that a third channel 93 connected to the second channel 92 is formed between the outer wall of the first annular protrusion 112a and the inner wall of the second annular groove 721, and between the bottom wall portion 72 and the inner wall of the first annular groove 113a.
  • the first channel 91, the second channel 92 and the third channel 93 connected together form a labyrinth channel 90, and the upper chamber 81 and the lower chamber 82 are connected through the labyrinth channel 90.
  • the plasma forms a small amount of coating there; since the second channel 92 is connected to the upper chamber 81 through the first channel 91, the plasma forms a trace of coating there; and since the third channel 93 is connected to the upper chamber 81 through the first channel 91 and the second channel 92, the plasma has basically been consumed in the first channel 91 and the second channel 92, so there is no coating in the third channel 93, which effectively prevents the plasma from continuing to leak downward and sputter into the lower chamber 82, avoiding the risk of leakage and preventing the lower chamber 82 from being contaminated by the coating.
  • the ignition gas (generally argon) can be guided to the upper chamber 81 through the labyrinth channel 90 for effective ignition.
  • the labyrinth channel structure is mostly formed by the cooperation of the deposition ring 60 and the lining assembly 70, which results in a larger cleaning area of the deposition ring 60.
  • the present application effectively splits the labyrinth channel structure.
  • the third channel without coating 93 does not need to be cleaned, which can effectively reduce the cleaning area of the deposition ring 60, save cleaning costs, reduce cleaning risks and the probability of cleaning defects, and reduce the risk of scrapping caused by cleaning.
  • the outer peripheral wall of the supporting device 50 and the surface of the second side of the assembly part 61 form an annular step structure 120
  • the upper surface of the first connecting part 12a and the inner peripheral surface of the first heat exchange part 11a constitute an inner annular groove
  • a part of the annular step structure 120 is located in the inner annular groove
  • the first connecting part 12a and the annular step structure 120 are fixed and electrically connected through the first conductive part 40a, thereby ensuring the fit between the first heat exchange surface 111a and the deposition ring 60.
  • the supporting device 50 includes: a ceramic part 51 for supporting the wafer and a metal part 52 located below the ceramic part 51, and the connection position between the ceramic part 51 and the metal part 52 is located at the position of the annular step structure 120, that is, the part of the annular step structure 120 close to the deposition ring 60 is the ceramic part 51, and the part away from the deposition ring 60 is the metal part 52, and the first conductive member 40a is connected to the metal part 52, so as to achieve reliable and stable fixation and electrical connection.
  • the energy of the plasma increases with increasing power. The higher the power, the stronger the energy and the more heat generated. As shown in FIG. 8 , the heat generated by the plasma is transferred to the deposition ring 60 along direction 1 and to the liner assembly 70 along direction 2.
  • the heat continues to be transferred. A portion of the heat on the deposition ring 60 is transferred downward to the first heat conductor 10a along direction 3 , and another portion of the heat on the deposition ring 60 is also transferred to the bottom wall portion 72 of the lining assembly 70 along direction 4 .
  • the ring 60 is provided with a first heat conductor 10a
  • the bottom wall portion 72 is provided with a second heat conductor 10b, which can improve the heat transfer efficiency in direction 3 and direction 5.
  • the heat is taken away by the cooling fluid in the first cooling channel 20a and the second cooling channel 20b, so that the deposition ring 60, the bottom wall portion 72 and the shielding portion 73 can always maintain a relatively low temperature, preventing the temperature of the process kit including the deposition ring 60, the lining assembly 70, etc. from being too high, thereby increasing the service life of the process kit and, at the same time, avoiding the process kit from radiating heat back to the wafer, thereby improving the process performance of the wafer.
  • the temperature of the deposition ring 60 and the liner assembly 70 is insufficient (has not reached the optimal process temperature range) due to the low DC sputtering power at the initial stage of the process. Therefore, the heat transfer along directions 1, 2 and 4 is slow, and the temperature of the deposition ring 60, the shielding portion 73 and the bottom wall portion 72 has not risen to the required optimal process temperature. Therefore, in FIG9 , the deposition ring 60 transfers less heat along the reverse direction 1 and the reverse direction 2, and the shielding portion 73 and the bottom wall portion 72 transfer less heat along the reverse direction 1 and the reverse direction 2.
  • the process chamber of the present application can actively heat the deposition ring 60 and the lining assembly 70 respectively by the first heating element 30a and the second heating element 30b.
  • the first heat conductive element 10a transfers heat along direction 3
  • the second heat conductive element 10b transfers heat along direction 5, so that the deposition ring 60 and the lining assembly 70 can quickly reach the required process temperature, and then heat the wafer along the reverse direction 1 and the reverse direction 2.
  • the first heating element 30a and the second heating element 30b can also be used to heat the deposition ring 60 and the liner assembly 70 to maintain a certain temperature to avoid the first sheet effect and the risk of film shedding.
  • the deposition ring 60 and the lining assembly 70 are maintained and baked through the full power output of the first heating element 30a and the second heating element 30b, so that the deposition ring 60 and the lining assembly 70 can quickly reach the highest temperature, stimulate the impurities adsorbed inside, and achieve the purpose of quickly and thoroughly removing impurities.
  • the baking temperature of the deposition ring 60 and the lining assembly 70 can also be measured and evaluated by the first temperature measuring element 100a and the second temperature measuring element 100b to evaluate the baking and impurity removal effects.
  • the heat conducting assembly 10 includes a first heat conducting member 10a and The second heat conducting member 10b.
  • an auxiliary temperature control device is also disclosed, and its structure is basically the same as that of the auxiliary temperature control device in the above embodiment, except that, in these other embodiments, the heat conducting component 10 only includes one of the first heat conducting member 10a or the second heat conducting member 10b, and accordingly, in the semiconductor process chamber, only the first heat conducting member 10a is provided on the deposition ring 60 or only the second heat conducting member 10b is provided on the lining component 70, and the above structure can also realize the temperature regulation of the deposition ring 60 or the lining component 70, therefore, without violating the working principle and the concept of the present application, the above embodiment is also within the protection scope of the present application.

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Abstract

本申请提供一种用于半导体工艺腔室的辅助控温装置及半导体工艺腔室。所述辅助控温装置，包括：导热组件，用于与所述半导体工艺腔室固定连接，以与所述半导体工艺腔室内的工艺套件进行热交换；冷却流道，设置在所述导热组件内，所述冷却流道用于通入冷却流体，以冷却所述导热组件；加热组件，设置在所述导热组件内，用于加热所述导热组件。本申请的辅助控温装置通过设置导热组件并在导热组件内设置冷却流道和加热组件，可以通过冷却流道和加热组件调节导热组件的温度，使导热组件与工艺套件之间热交换，实现调节工艺套件温度的目的，从而防止工艺套件的温度过高或过低，避免对晶圆产生影响，提高晶圆的产品质量。

Description

用于半导体工艺腔室的辅助控温装置及半导体工艺腔室 技术领域
本申请涉及半导体制造领域，具体地，涉及一种用于半导体工艺腔室的辅助控温装置及半导体工艺腔室。
背景技术
物理气相沉积技术作为半导体工业中广泛使用的一类金属或非金属薄膜技术，在该行业的应用空间非常大。其主要是通过向工艺腔室内通入工艺气体，通过在工艺腔室内产生较强的电势差，使工艺气体在电势差的作用下电离成等离子体，再通过控制产生的磁场，使等离子体轰击靶材，被轰击下来的目标原子沉积到晶圆表面形成目标薄膜。
然而，现有技术中的工艺腔室对于晶圆外周区域的温度控制能力较差，在工艺进行中晶圆温度无法达标，从而导致晶圆质量较差。
发明内容
本申请旨在至少解决现有技术中工艺腔室对于工艺区域的温度控制能力较差，在工艺进行中晶圆温度无法达标，导致晶圆质量较差的问题，提出了一种用于半导体工艺腔室的辅助控温装置及半导体工艺腔室。
为实现本申请的目的而提供一种用于工艺腔室的辅助控温装置，包括：导热组件，用于与所述半导体工艺腔室固定连接，以与所述半导体工艺腔室内的工艺套件进行热交换；冷却流道，设置在所述导热组件内，所述冷却流道用于通入冷却流体，以冷却所述导热组件；加热组件，设置在所述导热组件内，用于加热所述导热组件。
在一些实施例中，所述导热组件包括：
第一导热件，用于连接在所述半导体工艺腔室的承载装置上，以与所述工艺套件中的沉积环进行热交换；
所述冷却流道包括：
第一冷却流道，设置在所述第一导热件内；
所述加热组件包括：
第一加热件，设置在所述第一导热件内。
在一些实施例中，所述导热组件包括：
第二导热件，用于连接在所述半导体工艺腔室的腔室本体的内壁上，以与所述工艺套件中的内衬组件进行热交换；
所述冷却流道包括：
第二冷却流道，设置在所述第二导热件内；
所述加热组件包括：
第二加热件，设置在所述第二导热件内。
在一些实施例中，所述第一导热件包括：
第一热交换部，具有用于与所述沉积环贴合的第一热交换面；
第一连接部，连接在所述第一热交换部的内周侧，所述第一连接部用于与所述承载装置连接。
在一些实施例中，所述第一热交换部上设置有第一环形凸起部和第一环形槽，所述第一环形凸起部位于所述第一热交换面的外周侧，所述第一环形槽位于所述第一热交换面与所述第一环形凸起部之间，所述第一环形凸起部和第一环形槽用于与所述半导体工艺腔室的内衬组件间隙配合以形成迷宫通道。
在一些实施例中，所述第二导热件具有第二热交换部和第二连接部，所述第二热交换部具有用于与所述内衬组件贴合的第二热交换面，所述第二连接部连接在所述第二热交换部的外周侧，所述第二连接部用于与所述腔室本 体的内壁连接。
在一些实施例中，所述辅助控温装置还包括：
第一导电件，用于分别与所述第一导热件及所述承载装置电连接。
在一些实施例中，所述辅助控温装置还包括：
第二导电件，用于分别与所述第二导热件电连接及所述内衬组件电连接。
在一些实施例中，所述辅助控温装置还包括连接导线，
所述连接导线分别与所述第一导热件和所述第二导热件电连接，所述第二导热件还用于与所述腔室本体的内壁电连接，以使所述承载装置、所述第一导热件、所述第二导热件、所述内衬组件和所述腔室本体的内壁之间相互电导通。
在一些实施例中，所述辅助控温装置还包括：
测温组件，设置在所述导热组件上，以检测所述工艺套件的温度。
根据本申请的第二个方面，还公开了一种半导体工艺腔室，包括：腔室本体；设置在所述腔室本体内的承载装置和工艺套件；上述的辅助控温装置，所述辅助控温装置与所述腔室本体和/或所述承载装置中的至少一者固定连接，以调节所述工艺套件的温度。
在一些实施例中，所述工艺套件包括：内衬组件和沉积环，所述内衬组件连接在所述腔室本体上，所述沉积环环绕所述承载装置设置；所述辅助控温装置包括：第一导热件和/或第二导热件，所述第一导热件连接在所述承载装置上，所述第一导热件与所述沉积环贴合；所述第二导热件连接在所述腔室本体的内壁上，所述第二导热件与所述内衬组件贴合。
在一些实施例中，所述沉积环的外周侧具有环形的装配部，所述装配部外延至所述承载装置的外侧，所述第一导热件贴设在所述装配部上。
在一些实施例中，所述内衬组件包括：侧壁部，沿垂直于所述承载装置 的承载面的方向设置；
底壁部，与所述侧壁部相连，所述底壁部沿平行于所述承载面的方向设置，所述第二导热件贴设在所述底壁部上。
在一些实施例中，所述沉积环的外周侧具有装配部，所述装配部外延至所述承载装置的外侧，所述装配部具有朝向所述承载面的第一侧和背离所述承载面的第二侧；
在所述装配部的第一侧具有环形斜面，在所述沉积环由内向外的方向上，所述环形斜面的高度逐渐增加；
所述内衬组件还包括：
遮挡部，所述遮挡部连接在所述底壁部的内周壁上，且位于所述环形斜面的上方。
在一些实施例中，所述遮挡部朝向所述环形斜面的内表面与所述环形斜面之间形成第一通道；所述底壁部的内周壁与所述装配部的外周壁之间形成与所述第一通道连通的第二通道；所述第一通道和所述第二通道共同形成迷宫通道的一部分。
本申请具有以下有益效果：
本申请提供的辅助控温装置，通过设置导热组件并在导热组件内设置冷却流道和加热组件，可以通过冷却流道和加热组件调节导热组件的温度，使导热组件与工艺套件之间进行热交换，实现调节工艺套件温度的目的，从而防止工艺套件的温度过高或过低，避免对晶圆产生影响，提高晶圆的产品质量。
本申请提供的半导体工艺腔室，通过采用本申请提供的上述辅助控温装置，可以防止工艺套件的温度过高或过低，避免对晶圆产生影响，提高晶圆的产品质量。
附图说明
图1为现有技术中的半导体工艺腔室的结构示意图；
图2为现有技术中的半导体工艺腔室的热量传递方向示意图；
图3为本申请实施例的辅助控温装置的第一导热件的结构示意图；
图4为本申请实施例的辅助控温装置的第二导热件的结构示意图；
图5为本申请实施例的辅助控温装置用于半导体工艺腔室场景的示意图；
图6为图5中A部分的局部放大图；
图7为图6中B部分的局部放大图；
图8为本申请实施例的半导体工艺腔室在高功率溅射工艺中热量传递方向的示意图；
图9为本申请实施例的半导体工艺腔室在低功率溅射工艺中热量传递方向的示意图；
附图标记列表：
10、导热组件；20、冷却流道；30、加热组件；50、承载装置；51、陶瓷部分；52、金属部分；60、沉积环；61、装配部；611、环形斜面；612、第二环形凸起部；62、本体部；70、内衬组件；71、侧壁部；72、底壁部；721、第二环形槽；73、遮挡部；80、腔室本体；81、上腔室；82、下腔室；90、迷宫通道；91、第一通道；92、第二通道；93、第三通道；110、冷媒管；120环形台阶结构；
10a、第一导热件；11a、第一热交换部；111a、第一热交换面；112a、第一环形凸起部；113a、第一环形槽；12a、第一连接部；20a、第一冷却流道；30a、第一加热件；40a、第一导电件；100a、第一测温件；
10b、第二导热件；11b、第二热交换部；111b、第二热交换面；12b、第二连接部；20b、第二冷却流道；30b、第二加热件；40b、第二导电件；100b、 第二测温件。
具体实施方式
为使本领域的技术人员更好地理解本申请的技术方案，下面结合附图来对本申请提供的用于半导体工艺腔室的辅助控温装置及半导体工艺腔室进行详细描述。
相关技术中，如图1所示的用于半导体加工的工艺腔室，包括：腔室本体1、设置在腔室本体1内的承载装置2和包括内衬组件3、沉积环4、遮挡环5在内的工艺套件。图1中气源6用于向腔室本体1内输送工艺气体。腔室本体1顶部具有靶材7；内衬组件3位于承载装置2的外周侧；承载装置2用于放置晶圆，沉积环4设置在承载装置2与内衬组件3之间，承载装置2、沉积环4、内衬组件3和靶材7将腔室本体1的内部分隔为工艺区间8和非工艺区间9，工艺区间8用于进行半导体工艺，气源6与非工艺区间9连通。
相关技术中的工艺腔室存在以下问题：
首先，在高功率(22KW～55KW)的铝及其他种类薄膜溅射工艺中，需要承载装置2向上运动，同时带动沉积环4向上运动，沉积环4在达到一定高度后与遮挡环5接触，并继续向上运动，带动遮挡环5向上脱离内衬组件3以形成过流间隙。气源6输送的气体进入非工艺区间9后，再通过该过流间隙进入工艺区间8进行等离子体溅射工艺。
气体进入工艺区间8后被激发为等离子体，等离子体在磁场的束缚下轰击靶材7，被轰击下来的目标原子沉积到晶圆表面形成目标薄膜。其中，溅射到晶圆上形成薄膜的部分是有效溅射部分，而溅射到内衬组件3、遮挡环5、沉积环4上的部分是无效溅射部分。
发明人经研究发现：如图2所示，等离子体在溅射过程中产生大量的工艺热会沿方向1和方向2传递给包括内衬组件3、沉积环4以及遮挡环5在 内的工艺套件，导致内衬组件3、遮挡环5、沉积环4等温度升高。由于沉积环4处于承载装置2的外周侧，因此，沉积环4在方向3上的散热效率较差；由于工艺进行时遮挡环5与内衬组件3无接触，因此，遮挡环5在图2中方向4上的传热效率也非常差；由于非工艺区间9为真空状态，内衬组件3沿方向5向非工艺区间9传热的效率也极低；而由于内衬组件3的底壁相比于内衬组件3的侧壁距离腔室本体1的侧壁远，因此，内衬组件3沿方向6传热的效率极差。可以看出，内衬组件3、遮挡环5、沉积环4在各个方向上散热效果都极差，导致工艺套件上累积的温度越来越高，因此，会导致包括内衬组件3、沉积环4以及遮挡环5在内的工艺套件对晶圆沿方向7进行热辐射，导致晶圆成膜的热应力缺陷严重。也就是说，相关技术在高功率(22KW～55KW)的铝及其他种类薄膜持续溅射过程中，存在由于对包括内衬组件3、沉积环4以及遮挡环5在内的工艺套件冷却控温能力不足，导致晶圆成膜的热应力缺陷严重的问题。
其次，对于低功率(1KW～10KW)且膜层比较薄(即溅射时间短)的金属和金属氮化物的溅射工艺，由于这部分材料的薄膜形成过程中，不会产生像铝一样特别强烈的热效应，反而因低功率溅射及溅射时间短，而导致温度累积比较缓慢，一般来说，工艺套件在持续溅射过程中，达到200℃的时间比较长，因此，该工艺存在快速加热至工艺温度的需求。而且，由于工艺套件在该工艺过程中的热量同样会不断的累积，工艺套件的温度也会对晶圆产生边缘热辐射效应。
例如：在开始的前几片晶圆的溅射过程中，包括内衬组件3、沉积环4以及遮挡环5在内的工艺套件还没有积攒起较多的热量，对晶圆边缘热辐射小；随着溅射时间持续增加，工艺套件积攒了大量的工艺热，对晶圆边缘热辐射逐渐增强；这样就造成前几片晶圆(工艺套件热辐射低)和后续晶圆(工艺热辐射强)的成膜质量存在较大差异，形成首片效应，从而出现晶圆质量 不稳定的问题。而且，相关技术中包括内衬组件3、沉积环4以及遮挡环5在内的工艺套件不仅冷却控温的能力较差，而且也无加热的控温能力，导致工艺套件的温度在工艺持续进行的过程中产生变化，这种变化使得工艺套件前几片晶圆和后续晶圆之间形成较大的温度差，形成较明显的成膜质量的首片效应。也就是说，相关技术中包括内衬组件3、沉积环4以及遮挡环5在内的工艺套件在冷却和加热方面表现都较差，只能被动升温，温度不可控。
再次，在靶材7或者工艺套件保养恢复初期，极易产生腔室本体1纯净度问题，进而在工艺过程中使得晶圆产生各种缺陷。这是因为工艺套件中的内衬组件3、沉积环4以及遮挡环5多为金属部件，金属部件在保养期间腔室破真空接触大气后，吸附了大量的水汽和氧等杂质，吸附的杂质如果在腔室保养恢复完成后不能及时去除，会在高温环境下析出，伴随等离子体溅射，形成薄膜缺陷，残余的杂质越多，形成的薄膜缺陷越严重。
为此，相关技术在保养后，采用在腔室底部侧壁上的增设卤素灯对内衬组件3、遮挡环5、沉积环4进行照射加热以去除杂质，但由于卤素灯的加热能力有限，对内衬组件3、遮挡环5、沉积环4的加热能力不明显，难以达到较高温度，无法有效去除杂质。
再次，随着氮化物等薄膜溅射到内衬组件3、遮挡环5、沉积环4上后，在工艺空闲时(无直流溅射，无等离子体热源产生)，由于内衬组件3、遮挡环5、沉积环4的温度会下降，氮化物薄膜会硬化掉落，弥漫在腔室甚至掉落在晶圆上，造成晶圆缺陷。
最后，当进行工艺时，遮挡环5、沉积环4及承载装置2的绝缘部分处于悬浮电位。而腔室本体1是零电位，会与承载装置2部分的负电位形成较大电位差，使工艺气体在非工艺区间9内起辉，造成腔室本体1镀膜污染。
为了解决上述问题，如图3和图4所示，本申请公开了一种用于半导体工艺腔室的辅助控温装置。该辅助控温装置包括导热组件10、冷却流道20 和加热组件30。导热组件10用于与半导体工艺腔室固定连接，以便与半导体工艺腔室内的工艺套件进行热交换；冷却流道20和加热组件30均设置在导热组件10内，其中，冷却流道20用于通入冷却流体，以冷却导热组件10，冷却流体例如包括冷却液体或冷却气体。加热组件30用于加热导热组件10。辅助控温装置通过冷却流道20和加热组件30可以对导热组件10进行冷却或加热，使导热组件10与工艺套件之间形成温度差，从而实现与工艺套件的热交换，实现调节工艺套件温度的目的。
需要说明的是，本申请中工艺套件包括沉积环60和内衬组件70，其设置在半导体工艺腔室内，工艺套件用于与同样设置在半导体工艺腔室内部用于放置晶圆的承载装置50配合，从而将半导体工艺腔室内部分隔为工艺区间和非工艺区间，其中工艺区间用于进行半导体工艺。
当工艺套件温度过高时，可以向冷却流道20内通入冷却流体，通过冷却流体降低导热组件10的温度，使导热组件10与工艺套件之间形成温度差，工艺套件中的热量会传递至导热组件10，而导热组件10会将热量传递给冷却流体，并通过流动的冷却流体将热量带走，从而起到降低工艺套件温度的目的。
反之，当工艺套件温度过低时，可以通过加热组件30对导热组件10进行加热，使温度升高后的导热组件10与工艺套件之间形成温度差，导热组件10中的热量会传递至工艺套件中。随着加热组件30不断加热导热组件10，导热组件10中的热量会不断传递至工艺套件中，从而起到升高工艺套件温度的目的。
本申请提供的辅助控温装置，通过设置导热组件10并在导热组件10内设置冷却流道20和加热组件30，可以通过冷却流道20和加热组件30调节导热组件10的温度，使导热组件10与工艺套件之间进行热交换，以实现调节工艺套件温度的目的，从而防止工艺套件的温度过高或过低，避免对晶圆 产生影响，提高晶圆的产品质量。
下面结合具体的实施例，对本实施例提供的辅助控温装置进行详细说明。在本实施例中，辅助控温装装置应用于半导体工艺腔室(例如：物理磁控腔室)中，请参见图5，该半导体工艺腔室包括：腔室本体80和设置在腔室本体80内的承载装置50，工艺套件设置在腔室本体80内。其中，工艺套件包括沉积环60和内衬组件70，辅助控温装置用于对沉积环60和内衬组件70的温度进行调节。
请参见图5，半导体工艺腔室在进行溅射工艺过程中，承载装置50与工艺套件配合将腔室本体80内部分为上腔室81和下腔室82，可以理解的是，上腔室81是用于对晶圆进行工艺加工的空间，也即工艺区间，因此，为了避免对晶圆造成污染，辅助控温装置均是设置在下腔室82(即非工艺区间)中的。
如图3所示，在本实施例中，导热组件10包括：第一导热件10a；冷却流道20包括：第一冷却流道20a；加热组件30包括：第一加热件30a。第一导热件10a用于连接在承载装置50上，并与工艺套件中的沉积环60贴合，以便与沉积环60热交换，第一冷却流道20a和第一加热件30a均设置在第一导热件10a内，通过设置第一冷却流道20a和第一加热件30a可以对第一导热件10a进行冷却或加热，使第一导热件10a与沉积环60之间形成温度差，从而实现与沉积环60的热交换。
在低功率的金属薄膜溅射及高功率的铝溅射中，随着工艺的进行，沉积环60温度不断上升，温度升高后的沉积环60会将热量不断传递至第一导热件10a，再通过第一冷却流道20a内的冷却流体将热量带走，从而降低沉积环60的温度，有效防止热量积累在沉积环60上，防止沉积环60温度过高，有效保证沉积环60的寿命，同时，还可以避免沉积环60对晶圆反向辐射热量，提高晶圆的工艺性能。而且还可以使工艺过程中工艺温度保持相对稳定， 避免首片效应，保证晶圆产品质量的稳定性。
另外，在低功率金属薄膜溅射初期，可以通过第一加热件30a间接加热沉积环60，使沉积环60向晶圆辐射热量，从而快速达到工艺所需温度，也可以避免首片效应的产生，保证晶圆产品质量的稳定性。而在维护保养时，第一加热件30a配合卤素灯对沉积环60进行快速加热升温，使沉积环60可以快速析出吸附的杂质，提升沉积环60保养恢复速度和质量。而且，在工艺空闲时，可以对沉积环60持续加热，防止沉积环60上的氮化物由于低温硬化脱落，从而避免工艺缺陷，提升颗粒控制能力，提高晶圆的产品质量。
如图3所示，在本实施例中，第一导热件10a包括：环状的第一热交换部11a和第一连接部12a。环状的第一热交换部11a具有用于与沉积环60贴合的第一热交换面111a，第一热交换面111a可以与承载装置50的承载面(用于支撑晶圆的平面)平行，第一热交换面111a上设置有导热层，第一热交换面111a通过导热层贴合在沉积环60上，以提高热传递的效率。第一冷却流道20a和第一加热件30a位于第一热交换部11a内，第一冷却流道20a和第一加热件30a均沿第一热交换部11a的周向设置，第一加热件30a位于第一热交换面111a与第一冷却流道20a之间。通过将第一加热件30a设置在第一冷却流道20a与第一热交换面111a之间，可以使第一加热件30a在加热时更加靠近沉积环60，减少热传递过程中的热量损失，提高加热效率。在本实施例中，第一加热件30a例如为加热丝。
如图3所示，第一连接部12a连接在第一热交换部11a的内周侧(图3中第一热交换部11a的左侧)，第一连接部12a用于与承载装置50连接。通过设置第一连接部12a，第一热交换部11a通过第一连接部12a与承载装置50连接固定，从而使第一热交换部11a的第一热交换面111a与沉积环60贴合。在本实施例中，第一连接部12a的上表面与第一部11a的内周面构成内环槽，承载装置50的外周壁位于内环槽的内部。
如图3所示，第一热交换部11a上还设置有第一环形凸起部112a和第一环形槽113a，第一环形凸起部112a位于第一热交换面111a的外周侧(图3中第一热交换面111a的右侧)，第一环形槽113a位于第一热交换面111a与第一环形凸起部112a之间，第一环形凸起部112a和第一环形槽113a用于与内衬组件70间隙配合以形成迷宫通道90(请参见图6)。通过设置第一环形凸起部112a与第一环形槽113a并与内衬组件70间隙配合形成迷宫通道90，在进行溅射工艺过程中，可以防止因上腔室81中的等离子体通过第一环形槽113a与内衬组件70之间的间隙扩散泄漏至下腔室82，而造成的下腔室82污染。
在一些实施例中，如图4所示，导热组件10还包括：第二导热件10b；冷却流道20还包括：第二冷却流道20b；加热组件30还包括：第二加热件30b。第二导热件10b用于连接在腔室本体80的内壁上并与内衬组件70贴合，以便与内衬组件70进行热交换，第二冷却流道20b和第二加热件30b均设置在第二导热件10b内，通过设置第二冷却流道20b和第二加热件30b可以对第二导热件10b进行冷却或加热，使第二导热件10b与内衬组件70之间形成温度差，从而实现与内衬组件70的热交换。
在低功率的金属薄膜溅射及高功率的铝溅射中，随着工艺的进行，内衬组件70温度也不断上升，温度升高后的内衬组件70会将热量不断传递至第二导热件10b，再通过第二冷却流道20b内的冷却流体将热量带走，从而降低内衬组件70的温度，有效防止热量积累在内衬组件70上，防止内衬组件70温度过高，有效保证内衬组件70的寿命，同时，还可以避免内衬组件70对晶圆反向辐射热量，提高晶圆的工艺性能。而且，可以使工艺过程中工艺温度保持相对稳定，避免首片效应，保证晶圆产品质量的稳定性。
另外，在低功率金属薄膜溅射初期，可以通过第二加热件30b间接加热内衬组件70，使内衬组件70向晶圆辐射热量，从而快速达到工艺所需温度， 也可以避免首片效应的产生，保证晶圆产品质量的稳定性。而在维护保养时，第二加热件30b配合卤素灯对内衬组件70进行快速加热升温，使内衬组件70可以快速析出吸附的杂质，提升内衬组件70保养恢复的速度和质量。而且，在工艺空闲时，可以对内衬组件70持续加热，防止内衬组件70上的氮化物由于低温硬化脱落，从而避免工艺缺陷，提升颗粒控制能力，提高晶圆的产品质量。
如图4所示，第二导热件10b具有环状的第二热交换部11b和第二连接部12b，第二热交换部11b具有用于与内衬组件70贴合的第二热交换面111b，第二热交换面111b与承内衬组件70的贴合面平行，第二热交换面111b上同样设置有导热层，第二热交换面111b通过导热层贴合在内衬组件70上，以提高热传递的效率。第二冷却流道20b和第二加热件30b位于第二热交换部11b内，第二冷却流道20b和第二加热件30b均沿周向设置，第二加热件30b位于第二热交换面111b与第二冷却流道20b之间。同理，通过将第二加热件30b设置在第二冷却流道20b与第二热交换面111b之间，可以使第二加热件30b加热时，更加靠近内衬组件70，减少热传递过程中的热量损失，提高加热效果。在本实施例中，第二加热件30b例如为加热丝。
第二连接部12b连接在第二热交换部11b的外周侧(图4中的右侧)，第二连接部12b用于与腔室本体80的内壁连接。请参见图6，第二连接部12b穿设在腔室本体80的内壁上并固定连接，从而使第二热交换面111b与内衬组件70贴合。同时，第二连接部12b与腔室本体80的内壁之间形成密封连接，以保证腔室本体80内部处于真空状态。
需要说明的是，从图6中可以看出，部分第二连接部12b已经延伸至腔室本体80的外部，因此，可以将第二连接部12b位于腔室本体80外部的部分接地，从而使整个第二导热件10b处于零电位，而由于腔室本体80与第二连接部12b直接接触，因此，也可以同时使腔室本体80的内壁处于零电位， 从而避免位于第二导热件10b与腔室本体80的内壁电位差过大导致下腔室82产生起辉的现象。
在本实施例中，辅助控温装置还包括第一导电件40a和第二导电件40b。第一导电件40a分别与第一导热件10a和承载装置50电连接，第二导电件40b分别与第二导热件10b电连接和内衬组件70电连接。
具体来说，如图3所示，第一导电件40a的第一端连接在第一连接部12a上，并且第一导电件40a的第二端凸出于第一连接部12a的上表面。请参见图5，装配时，第一导电件40a的第二端与承载装置50固定连接，从而通过第一导电件40a将承载装置50与第一导热件10a固定连接，同时，第一导电件40a为金属材质，可以将第一导热件10a与承载装置50之间电导通。
本申请提供的辅助控温装置，通过设置第一导电件40a，并通过第一导电件40a实现第一导热件10a与承载装置50之间的固定且电连接，从而在保证第一导热件10a与沉积环60之间贴合的稳定性的基础上，还可以实现第一导电件40a与承载装置50之间的等电位，在将承载装置50接地后，第一导电件40a也处于零电位。这样可以防止第一导热件10a与承载装置50、腔室本体80内壁之间产生较大电位差，有效避免在下腔室82引发起辉现象，防止下腔室82镀膜污染，提升设备的稳定性。
可以理解的是，为了提高连接的可靠性，在本实施例中，第一导电件40a可以采用镀银螺栓，通过镀银螺栓实现第一导热件10a与承载装置50的固定和电连接，从而提高第一导热件10a与承载装置50连接的可靠性。当然这并不是限制性的，只要是可以同时起到固定和电连接作用的部件均在本申请的保护范围之内。
如图4所示，在第二热交换面111b上设置有安装槽，第二导电件40b的第一端位于安装槽内，并与安装槽的内壁固定连接。第二导电件40b的第二端凸出于第二热交换面111b。请参见图6，当第二热交换面111b贴合在内 衬组件70上，使第二导电件40b的第二端抵接在内衬组件70表面，金属材质的第二导电件40b使第二导电件40b与内衬组件70之间电导通，由于将第二导热件10b与腔室本体80的内壁连接后，第二导热件10b与腔室本体80的内壁也是电导通的，进而使第二导热件10b、腔室本体80的内部与内衬组件70之间电导通。
本申请提供的辅助控温装置，通过设置第二导电件40b，并通过第二导电件40b实现第二导热件10b与内衬组件70之间电连接，使第二导电件40b、腔室本体80的内壁与内衬组件70之间等电位，在将第二导热件10b接地后，第二导电件40b、腔室本体80的内壁与内衬组件70均处于零电位，有效防止第二导电件40b与内衬组件70、腔室本体80内壁之间产生较大电位差，避免在下腔室82中引发起辉现象造成镀膜污染，提升设备的稳定性。零电位且等电位状态，不受等离子体轰击及漏射频影响。
可以理解的是，第二导电件40b的第二端只是略高于第二热交换面111b，以避免影响第二热交换面111b与内衬组件70之间的贴合；另外，第二热交换面111b需要避让第二导电件40b的位置，以避免影响第二导电件40b与内衬组件70之间的电导通效果。
如图6所示的实施例中，第一导热件10a与第二导热件10b之间还设置有连接导线(图中未示出)，连接导线的两端分别与第一导热件10a和第二导热件10b连接，从而实现第一导热件10a与第二导热件10b之间的电导通。在将第一导热件10a与第二导热件10b电导通后，承载装置50、第一导热件10a、第二导热件10b、内衬组件70和腔室本体80内壁之间均处于等电位，在第二导热件10b接地后，位于与下腔室82中的承载装置50、第一导热件10a、第二导热件10b、内衬组件70和腔室本体80内壁均处于零电位，有效杜绝了下腔室82中起辉现象的发生，因此，下腔室82中不会受到等离子体轰击及漏射频影响，避免了下腔室82受到镀膜污染，提升设备的稳定性和寿 命。
如图5所示，在本实施例中，在第一导热件10a与第二导热件10b之间还设置有冷媒管110，冷媒管110的一端与第一冷却流道20a连通，冷媒管110的第二端与第二冷却流道20b连通，使第一冷却流道20a和第二冷却流道20b之间相互连通，从而可以使第一冷却流道20a和第二冷却流道20b共用一条进水管路和一条出水管路(图中未示出)，同理，第一加热件30a与第二加热件30b之间可以通过导线(图中未示出)电连接，使第一加热件30a与第二加热件30b共用一套电路进行供电和控制，从而简化整体结构，降低腔室本体80内部气体泄漏的风险，还可以降低改造成本。
在本实施例中，辅助控温装置还包括：测温组件，该测温组件例如包括第一测温件100a和第二测温件100b。第一测温件100a设置在第一导热件10a上，用于检测沉积环60的温度，第二测温件100b设置在第二导热件10b上，用于检测内衬组件70的温度。
如图3所示，第一测温件100a嵌设在第一导热件10a的第一热交换部11a上，第一测温件100a的一端延伸至第一热交换面111a位置处，且第一热交换面111a上的导热层覆盖在第一测温件100a上，在第一热交换面111a与沉积环60贴合时，第一测温件100a也可以通过导热层抵接在沉积环60上，以便测量沉积环60的温度，而且，由于导热层覆盖在第一测温件100a上，也就是说，第一测温件100a与沉积环60之间通过导热层传热，可以使得第一测温件100a检测到的温度更加准确和及时。
同样的，如图4所示，第二测温件100b嵌设在第二导热件10b的第二热交换部11b上，第二测温件100b的一端延伸至第二热交换面111b位置处，且第二热交换面111b上的导热层覆盖在第二测温件100b上，在第二热交换面111b与内衬组件70贴合时，第二测温件100b也可以通过导热层抵接在内衬组件70上，以便测量内衬组件70的温度，而且，由于导热层覆盖在第二 测温件100b上，也就是说，第二测温件100b与内衬组件70之间通过导热层传热，可以使第二测温件100b检测到的温度更加准确和及时。
本申请提供的辅助控温能装置通过设置测温组件可以实时监测沉积环60、内衬组件70的温度，获得实时反馈，从而可以根据反馈的温度主动对沉积环60、内衬组件70的温度进行调节，形成闭环温度调节，使工艺温度处于最佳温度范围，减少工艺温度的波动，避免首片效应，保证晶圆产品质量的稳定性。在本实施例中，第一测温件100a和第二测温件100b均为测温热电偶，但是这并不是限制性的，只要是可以测量温度的装置，在不违背本申请工作原理和申请构思的前提下，均在本申请的保护范围之内。
根据本申请的第二个方面，还公开了一种半导体工艺腔室，包括：腔室本体80、承载装置50、工艺套件和上述的辅助控温装置。
在如图5所示的实施例中，承载装置50和工艺套件均设置在腔室本体80内。辅助控温装置与腔室本体80以及承载装置50中的至少一者固定连接，以调节工艺套件的温度。
本申请提供的半导体工艺腔室通过设置辅助控温装置，可以通过辅助控温装置对工艺套件的温度进行调节，防止工艺套件温度过高或过低影响晶圆的品质，提高晶圆的产品质量。
可以理解的是，在本实施例中，承载装置50可升降地设置在腔室本体80内，承载装置50通过升降可以与内衬组件70配合或脱离配合。请参见图5，半导体工艺腔室在进行溅射工艺过程中，承载装置50上升至与内衬组件70配合的位置，承载装置50和内衬组件70将腔室本体80内部分为上腔室81和下腔室82，上腔室81是用于对晶圆进行溅射工艺加工的工艺区间，下腔室82是非工艺区间，辅助控温装置设置在下腔室82中。
请参见图5，工艺套件包括：内衬组件70和沉积环60，内衬组件70连接在腔室本体80上，沉积环60环绕承载装置50设置，在承载装置50上升 至与内衬组件70配合的位置后，沉积环60与内衬组件70间隙配合。辅助控温装置包括：第一导热件10a和第二导热件10b，第一导热件10a连接在承载装置50上，第一导热件10a与沉积环60贴合；第二导热件10b连接在腔室本体80的内壁上，第二导热件10b与内衬组件70贴合。
具体来说，如图6所示，沉积环60的外周侧具有环形的装配部61，装配部61外延至承载装置50的外侧，第一导热件10a贴设在装配部61上。例如，沉积环60包括本体部62和设置在本体部62的外周侧的装配部61，装配部61为环形结构。装配部61沿平行于承载面的方向延伸至承载装置50的外侧并位于承载装置50与内衬组件70之间，装配部61具有朝向承载面的第一侧和背离承载面的第二侧。
如图7所示，在装配部61的第一侧，装配部61具有环形斜面611，在沉积环60由内向外(图7中自左向右)的方向上，环形斜面611的高度逐渐增加。在装配部61的第二侧设置有第二环形凸起部612，第二环形凸起部612位于装配部61的外周侧，第一导热件10a贴设在装配部61的第二侧。
在一些实施例中，如图6所示，内衬组件70包括：侧壁部71和底壁部72。侧壁部71沿垂直于承载装置50的承载面的方向设置；底壁部72与侧壁部71相连，且底壁部72沿平行于承载面的方向设置，底壁部72例如为环形结构，底壁部72的内周壁与装配部61的外侧间隙配合，底壁部72的外部与侧壁部71相连，第二导热件10b贴设在底壁部72上。
在一些实施例中，如图7所示，内衬组件70还包括遮挡部73，遮挡部73为环形结构，其连接在底壁部72的内周壁上。遮挡部73位于环形斜面611的上方，遮挡部73朝向环形斜面611的内表面与环形斜面611平行，遮挡部73的内表面与环形斜面611之间形成第一通道91。底壁部72的内周壁与装配部61的外周壁平行，且底壁部72的内周壁与装配部61的外周壁之间形成与第一通道91连通的第二通道92。连通的第一通道91、第二通道92共同形 成迷宫通道90的一部分。
如图6所示，第一导热件10a包括：环状的第一热交换部11a和第一连接部12a。如图7所示，第一热交换部11a具有的第一热交换面111a贴合在装配部61的第二侧上。第一热交换部11a上还设置有第一环形凸起部112a和第一环形槽113a，第一环形凸起部112a位于第一热交换面111a的外周侧(图7中第一热交换面111a的右侧)，第一环形槽113a位于第一热交换面111a与第一环形凸起部112a之间，第二环形凸起部612位于第一环形槽113a内。
如图7所示，底壁部72上设置有第二环形槽721，在承载装置50上升至与内衬组件70配合的位置后，第一环形凸起部112a插入第二环形槽721内并间隙配合，使第一环形凸起部112a的外壁与第二环形槽721内壁之间、底壁部72与第一环形槽113a内壁之间形成与第二通道92连通的第三通道93。
如图7所示，连通的第一通道91、第二通道92和第三通道93共同形成迷宫通道90，上腔室81和下腔室82通过迷宫通道90连通。在进行溅射工艺过程中，由于第一通道91直接与上腔室81连通，且整个通道是倾斜设置的，因此，等离子体在该处形成少量镀膜；由于第二通道92通过第一通道91与上腔室81相连，因此，等离子体在该处形成微量镀膜；而由于第三通道93通过第一通道91和第二通道92与上腔室81连通，等离子体基本上已经在第一通道91和第二通道92内消耗完，因此第三通道93内无镀膜，有效防止等离子体向下继续泄漏溅射至下腔室82之中，避免形成漏辉风险，防止下腔室82被镀膜污染，同时，还可以通过迷宫通道90将起辉气体(一般氩气)引导至上腔室81中进行有效起辉。另外，传统技术中迷宫通道结构大多由沉积环60与内衬组件70配合形成，这会导致沉积环60的清洗面积较大。而本申请有效地拆分了迷宫通道结构，与传统技术相比，无镀膜的第三通道 93不需要清洗，可以有效减少沉积环60的清洗面积，节省清洗成本、降低清洗风险及清洗缺陷概率，减少因清洗造成的报废风险。
如图6所示，承载装置50的外周壁与装配部61的第二侧的表面形成环形台阶结构120，第一连接部12a的上表面与第一热交换部11a的内周面构成内环槽，环形台阶结构120的一部分位于内环槽内，并通过第一导电件40a实现第一连接部12a与环形台阶结构120之间的固定和电连接，从而保证第一热交换面111a与沉积环60的贴合。
可以理解的是，如图6所示，承载装置50包括：用于承载晶圆的陶瓷部分51和位于陶瓷部分51下方的金属部分52，陶瓷部分51与金属部分52的连接位置位于环形台阶结构120位置处，也就是说，环形台阶结构120靠近沉积环60的部分是陶瓷部分51，而远离沉积环60的部分是金属部分52，而第一导电件40a连接在该金属部分52上，从而实现可靠和稳定地固定及电连接。
下面结合具体的工艺情况，对本申请的实施例的半导体工艺腔室的工作原理进行具体说明：
在高功率的铝溅射过程中，等离子体的能量随功率增加而增加，功率越高，能量越强，产生的热量越多，如图8所示，等离子体产生的热量沿方向1传递给沉积环60、沿方向2传递给内衬组件70。
在沉积环60受热后热量继续传递，沉积环60上的一部分热量沿方向3向下传递给第一导热件10a，沉积环60上的另一部分热量还会沿方向4传递给内衬组件70的底壁部72。
在内衬组件70受热后，底壁部72的部分热量会沿方向5传递给下腔室82中的第二导热件10b。
在相关技术中由于热量在方向3及方向5上的热传效率十分低下，因此，沉积环60、遮挡部73、底壁部72会积累起大量的热，而本申请由于在沉积 环60贴设有第一导热件10a，在底壁部72贴设有第二导热件10b，可以提高在方向3和方向5的热传递效率，配合第一冷却流道20a和第二冷却流道20b，通过第一冷却流道20a和第二冷却流道20b内的冷却流体将热量带走，可以使沉积环60、底壁部72和遮挡部73始终保持相对较低的温度，防止包括沉积环60、内衬组件70等的工艺套件温度过高，提高工艺套件的使用寿命，同时，避免工艺套件对晶圆反向辐射热量，提高晶圆的工艺性能。
如图9所示，在钛、钽等工艺溅射工艺过程中，工艺初期因直流溅射功率较低，沉积环60和内衬组件70温度不足(未达到最佳工艺温度范围)，因此，热量沿方向1、方向2以及方向4的热传递较慢，沉积环60、遮挡部73、底壁部72的温度也并未上升到所需的工艺最佳温度，因此，在图9中，沉积环60沿反方向1和反方向2传递的热量较少，遮挡部73、底壁部72沿反方向1和反方向2传递的热量也较少。
而本申请的工艺腔室可以通过第一加热件30a和第二加热件30b分别对沉积环60和内衬组件70进行主动加热，第一导热件10a沿方向3传递热量，第二导热件10b沿方向5传递热量，使沉积环60及内衬组件70快速达到所需工艺温度，进而沿反方向1和反方向2对晶圆加热。
不难看出，在工艺空闲时，同样可以采用第一加热件30a和第二加热件30b对沉积环60、和内衬组件70进行加热，使其保持一定温度，避免首片效应及薄膜脱落风险。
另外，在工艺套件维护保养过程中，通过第一加热件30a和第二加热件30b的全功率输出，对沉积环60及内衬组件70进行保养烘烤，使沉积环60、内衬组件70快速达到最高温度，激发出内部吸附的杂质，达到快速彻底去除杂质的目的，还可以通过第一测温件100a和第二测温件100b测量评估沉积环60及内衬组件70的烘烤温度，评估烘烤及杂质去除效果。
还需要说明的是，在本实施例中，导热组件10包括第一导热件10a和 第二导热件10b。但是这并不是限制性的，在图未示出的一些其他实施例中，同样公开了一种的辅助控温装置，其结构与上述实施例中的辅助控温装置结构基本相同，区别在于，在这些其他实施例中，导热组件10仅包括第一导热件10a或第二导热件10b中的一个，相应的，在半导体工艺腔室中，仅沉积环60上设置有第一导热件10a或者仅内衬组件70上设置有第二导热件10b，上述结构也可以实现对沉积环60或内衬组件70的温度调节，因此，在不违背本申请工作原理和申请构思的前提下，上述实施例也在本申请的保护范围之内。
可以理解的是，以上实施方式仅仅是为了说明本申请的原理而采用的示例性实施方式，然而本申请并不局限于此。对于本领域内的普通技术人员而言，在不脱离本申请的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本申请的保护范围。

Claims (16)

  1. 一种用于半导体工艺腔室的辅助控温装置，其特征在于，包括：
    导热组件，用于与所述半导体工艺腔室固定连接，以与所述半导体工艺腔室内的工艺套件进行热交换；
    冷却流道，设置在所述导热组件内，所述冷却流道用于通入冷却流体，以冷却所述导热组件；
    加热组件，设置在所述导热组件内，用于加热所述导热组件。
  2. 根据权利要求1所述的辅助控温装置，其特征在于，所述导热组件包括：
    第一导热件，用于连接在所述半导体工艺腔室的承载装置上，以与所述工艺套件中的沉积环进行热交换；
    所述冷却流道包括：
    第一冷却流道，设置在所述第一导热件内；
    所述加热组件包括：
    第一加热件，设置在所述第一导热件内。
  3. 根据权利要求1或2所述的辅助控温装置，其特征在于，所述导热组件包括：
    第二导热件，用于连接在所述半导体工艺腔室的腔室本体的内壁上，以与所述工艺套件中的内衬组件进行热交换；
    所述冷却流道包括：
    第二冷却流道，设置在所述第二导热件内；
    所述加热组件包括：
    第二加热件，设置在所述第二导热件内。
  4. 根据权利要求2所述的辅助控温装置，其特征在于，所述第一导热件包括：
    第一热交换部，具有用于与所述沉积环贴合的第一热交换面；
    第一连接部，连接在所述第一热交换部的内周侧，所述第一连接部用于与所述承载装置连接。
  5. 根据权利要求4所述的辅助控温装置，其特征在于，
    所述第一热交换部上设置有第一环形凸起部和第一环形槽，所述第一环形凸起部位于所述第一热交换面的外周侧，所述第一环形槽位于所述第一热交换面与所述第一环形凸起部之间，所述第一环形凸起部和第一环形槽用于与所述半导体工艺腔室的内衬组件间隙配合以形成迷宫通道。
  6. 根据权利要求3所述的辅助控温装置，其特征在于，
    所述第二导热件具有第二热交换部和第二连接部，所述第二热交换部具有用于与所述内衬组件贴合的第二热交换面，所述第二连接部连接在所述第二热交换部的外周侧，所述第二连接部用于与所述腔室本体的内壁连接。
  7. 根据权利要求2所述的辅助控温装置，其特征在于，所述辅助控温装置还包括：
    第一导电件，用于分别与所述第一导热件及所述承载装置电连接。
  8. 根据权利要求3所述的辅助控温装置，其特征在于，所述辅助控温装置还包括：
    第二导电件，用于分别与所述第二导热件电连接及所述内衬组件电连接。
  9. 根据权利要求8所述的辅助控温装置，其特征在于，
    所述辅助控温装置还包括连接导线，
    所述连接导线分别与所述第一导热件和所述第二导热件电连接，所述第二导热件还用于与所述腔室本体的内壁电连接，以使所述承载装置、所述第一导热件、所述第二导热件、所述内衬组件和所述腔室本体的内壁之间相互电导通。
  10. 根据权利要求1所述的辅助控温装置，其特征在于，所述辅助控温装置还包括：
    测温组件，设置在所述导热组件上，以检测所述工艺套件的温度。
  11. 一种半导体工艺腔室，其特征在于，包括：
    腔室本体；
    设置在所述腔室本体内的承载装置和工艺套件；
    根据权利要求1至10中任一项所述的辅助控温装置，所述辅助控温装置与所述腔室本体和/或所述承载装置中的至少一者固定连接，以调节所述工艺套件的温度。
  12. 根据权利要求11所述的半导体工艺腔室，其特征在于，所述工艺套件包括：内衬组件和沉积环，所述内衬组件连接在所述腔室本体上，所述沉积环环绕所述承载装置设置；
    所述辅助控温装置包括：第一导热件和/或第二导热件，所述第一导热件连接在所述承载装置上，所述第一导热件与所述沉积环贴合；所述第二导热件连接在所述腔室本体的内壁上，所述第二导热件与所述内衬组件贴合。
  13. 根据权利要求12所述的半导体工艺腔室，其特征在于，
    所述沉积环的外周侧具有装配部，所述装配部外延至所述承载装置的外侧，所述第一导热件贴设在所述装配部上。
  14. 根据权利要求12所述的半导体工艺腔室，其特征在于，所述内衬组件包括：
    侧壁部，沿垂直于所述承载装置的承载面的方向设置；
    底壁部，与所述侧壁部相连，所述第二导热件贴设在所述底壁部上。
  15. 根据权利要求14所述的半导体工艺腔室，其特征在于，所述沉积环的外周侧具有装配部，所述装配部外延至所述承载装置的外侧，所述装配部具有朝向所述承载面的第一侧和背离所述承载面的第二侧；
    在所述装配部的第一侧具有环形斜面，在所述沉积环由内向外的方向上，所述环形斜面的高度逐渐增加；
    所述内衬组件还包括：
    遮挡部，所述遮挡部连接在所述底壁部的内周壁上，且位于所述环形斜面的上方。
  16. 根据权利要求15所述的半导体工艺腔室，其特征在于，所述遮挡部朝向所述环形斜面的内表面与所述环形斜面之间形成第一通道；所述底壁部的内周壁与所述装配部的外周壁之间形成与所述第一通道连通的第二通道；所述第一通道和所述第二通道共同形成迷宫通道的一部分。
PCT/CN2024/126963 2023-11-06 2024-10-24 用于半导体工艺腔室的辅助控温装置及半导体工艺腔室 Pending WO2025098147A1 (zh)

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