WO2025044752A1 - 承载装置和半导体工艺设备 - Google Patents

承载装置和半导体工艺设备 Download PDF

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Publication number
WO2025044752A1
WO2025044752A1 PCT/CN2024/111666 CN2024111666W WO2025044752A1 WO 2025044752 A1 WO2025044752 A1 WO 2025044752A1 CN 2024111666 W CN2024111666 W CN 2024111666W WO 2025044752 A1 WO2025044752 A1 WO 2025044752A1
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WO
WIPO (PCT)
Prior art keywords
annular
channel
channels
gas
connecting channels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/111666
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English (en)
French (fr)
Inventor
田西强
董涛
叶华
刘国杰
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to KR1020267004155A priority Critical patent/KR20260036341A/ko
Publication of WO2025044752A1 publication Critical patent/WO2025044752A1/zh
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45597—Reactive back side gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the field of semiconductor manufacturing, and in particular, to a carrier device and semiconductor process equipment.
  • Atomic layer deposition (ALD) equipment and chemical vapor deposition (CVD) equipment are widely used in today's integrated circuit semiconductor manufacturing process.
  • the wafer carrier such as a base
  • an edge purge function to blow away the reaction gas on the back and sides of the wafer, thereby avoiding side plating and back plating on the wafer.
  • the purge channel structure in the existing carrier device is to guide the purge gas to the buffer cavity 2 at the edge of the chuck through multiple horizontal straight channels 1, and then guide the purge gas to the edge of the wafer through the corresponding channel, so that the purge gas can be blown toward the back and side of the wafer.
  • FIG1 only shows the horizontal straight channel 1 and the buffer cavity 2.
  • the uniformity of the airflow distribution in the circumferential direction is poor, and the horizontal straight channel 1 is easily affected by the fluctuation of the gas source pressure or flow, which will also cause poor airflow uniformity.
  • the present application aims to solve at least one of the technical problems existing in the prior art and proposes a bearing
  • the device and semiconductor process equipment can effectively improve the circumferential distribution uniformity of the purge gas blown toward the edge of the wafer, thereby improving the process uniformity.
  • the first gas-uniform channel group includes at least one annular channel, a plurality of first connecting channels and a plurality of second connecting channels, and the second gas-uniform channel group surrounds the periphery of the annular channel;
  • the plurality of first connecting channels are all located in the space surrounded by the annular channel, one end of each of the first connecting channels is used as the air inlet, and the other end is communicated with the annular channel;
  • the annular channels are multiple and are nested and spaced apart from each other;
  • the radial width of the innermost annular channel is greater than the radial widths of the other annular channels
  • the width of each of the second connecting channels connected to the innermost annular channel is greater than the width of each of the second connecting channels on other different circumferences.
  • radial widths of the annular channels except the innermost annular channel are the same or decrease from the inside to the outside.
  • radial widths of the second connecting channels on different circumferences other than the second connecting channels connected to the innermost annular channel are the same or decrease from the inside to the outside.
  • first connecting channel and the second connecting channel are both arranged to extend radially along the bearing surface
  • the position where each of the first connecting channels communicates with the innermost annular channel is located in the middle between two adjacent second connecting channels that communicate with the annular channel.
  • the position where the second connecting channel on each circumference communicates with the annular channel adjacent to the outer side is located in the middle position between two adjacent second connecting channels on the adjacent circumferences of the outer side.
  • the second gas uniformity channel group includes a first buffer cavity, a plurality of first pressure holding channels, a second buffer cavity and a plurality of second pressure holding channels, wherein:
  • the first buffer cavity is annular and surrounds the outer periphery of the outermost annular channel, and is connected to the outermost annular channel through a plurality of the second connecting channels;
  • the second buffer cavity is annular and is arranged above the first buffer cavity at intervals, and the second buffer cavity is connected to the first buffer cavity through a plurality of the first pressure-holding channels;
  • One ends of the plurality of second pressure-holding channels are all communicated with the second buffer chamber, and the other ends of the plurality of second pressure-holding channels are all used as the air outlets.
  • the volume of the first buffer cavity is less than or equal to the volume of the second buffer cavity.
  • the plurality of first pressure-holding channels include a plurality of vertically arranged first through holes. and a plurality of vertically arranged second through holes, wherein one first through hole is arranged on both sides of each of the second connecting channels communicating with the first buffer cavity;
  • a second through hole is disposed on both sides of each second connecting channel communicating with the first buffer cavity, and the second through hole is located on a side of the first through hole on the same side thereof away from the second connecting channel.
  • the carrier device includes a carrier body and an edge ring, wherein the carrier body has the carrier surface, and the diameter of the carrier surface is smaller than the diameter of the wafer, so that the edge of the wafer can be located outside the carrier surface; a first annular step portion is formed on the top of the outer peripheral surface of the carrier body,
  • the edge ring comprises an annular body, a first annular flange is arranged on the inner circumference of the annular body, the first annular flange is arranged above the first annular step portion at intervals, and at least a part of the first annular flange is located below the wafer, and the lower surface and the inner circumference of the first annular flange respectively form the second pressure holding channel with the upper surface of the first annular step portion and the outer circumference of the bearing body;
  • a second annular step portion is formed on the outer circumferential surface of the bearing body and is located below the first annular step portion, and a second annular flange is formed on the inner circumferential surface of the annular body and is located below the first annular flange. At least a portion of the second annular flange is superimposed on the second annular step portion, and the second buffer cavity is formed between the inner circumferential surface of the second annular flange, the outer circumferential surface of the first annular step portion, the upper surface of the second annular step portion and the lower surface of the first annular flange.
  • the bearing body includes a top plate and a bottom plate stacked on the lower surface of the top plate, wherein a plurality of the annular channels, a plurality of the first connecting channels, a plurality of the second connecting channels and the first buffer cavity are formed between the upper surface of the bottom plate and the lower surface of the top plate;
  • a plurality of the first pressure-holding channels are formed through the top plate, and the gas outlet end of each of the first pressure-holding channels is located on the upper surface of the second annular step portion;
  • a plurality of air inlet holes are provided through the bottom plate, one end of the plurality of air inlet holes is connected with the plurality of air inlets in a one-to-one correspondence, and the other end of the plurality of air inlet holes is used to be connected with the air source.
  • the present application further provides a semiconductor process equipment, including a process chamber and a carrier device arranged in the process chamber, wherein the carrier device adopts the above-mentioned carrier device provided by the present application.
  • the carrier device when the purge gas enters from the air inlet of the first uniform gas channel group, it first flows into the annular channel from multiple first connecting channels. Since multiple first connecting channels are provided, this allows the purge gas to be divided into multiple paths from the air inlet, and simultaneously flows into the annular channel through multiple first connecting channels to multiple different positions on its circumference, so that the purge gas can be quickly spread in the circumference of the annular channel, and evenly distributed in the circumference, thereby improving the uniform gas effect.
  • the purge gas in the annular channel flows into the outermost second uniform gas channel group through each second connecting channel connected to the annular channel, and is transported by the second uniform gas channel group, and finally blown out from its outlet toward the edge of the wafer placed on the carrier surface, so as to achieve the purge of the back and side of the wafer.
  • the purge gas flows into the annular channel from each first connecting channel, it can diffuse quickly in the annular channel to achieve uniform distribution in the circumferential direction, thereby solving the problem of uneven airflow distribution in the circumferential direction caused by directly delivering the purge gas to the outermost channel through a straight channel in the prior art.
  • the air resistance of the annular channel is smaller than that of the straight channel, and it is not easily affected when the gas source pressure or flow fluctuates. Therefore, the uniformity of the circumferential distribution of the purge gas blown toward the edge of the wafer can be effectively improved, thereby improving the process uniformity.
  • the semiconductor process equipment provided in the present application can effectively improve the circumferential distribution uniformity of the purge gas blown toward the edge portion of the wafer by adopting the above-mentioned supporting device provided in the present application, thereby improving the process uniformity.
  • FIG1 is a structural diagram of a horizontal straight channel and a buffer cavity in a carrying device used in the related art
  • FIG2 is a cross-sectional view of a carrying device provided in an embodiment of the present application.
  • FIG3A is a partial enlarged view of the carrying device in FIG2 ;
  • FIG3B is a partial enlarged view of the carrying device in FIG2 ;
  • FIG4 is a top view of a first gas uniforming channel group in a purge channel structure provided in an embodiment of the present application
  • FIG5 is a graph showing a gas flow rate and a chuck diameter of a carrier provided in the related art
  • FIG. 6 is a graph showing the relationship between the gas flow rate and the chuck diameter of the carrier device provided in an embodiment of the present application.
  • FIG. 7 is a comparison diagram of the curve shown in FIG. 5 and the curve shown in FIG. 6 .
  • An embodiment of the present application provides a carrying device, including a carrying surface for carrying a wafer 4, wherein a purge channel structure for conveying a purge gas is provided in the carrying device, wherein the purge channel structure includes a first gas uniformity channel group and a second gas uniformity channel group which are interconnected, wherein the first gas uniformity channel group has an air inlet for connecting to a gas source, wherein the first gas uniformity channel group is used to convey the purge gas from the gas source to the second gas uniformity channel group, and at the same time, to uniformize the purge gas; the second gas uniformity channel group has an outlet 94a for blowing out the purge gas toward an edge portion 4a of the wafer 4 placed on the carrying surface, wherein the second gas uniformity channel group is used to convey the purge gas uniformed by the first gas uniformity channel group to the edge of the wafer 4 on the carrying surface, and at the same time, to further uniformize the purge gas, and finally blow it out from its outlet
  • the first gas-uniform channel group includes at least one annular channel 82, a plurality of first connecting channels 84, and a plurality of first connecting channels 85.
  • Channel 81 and multiple second connecting channels 83 wherein, taking the annular channel 82 as an example, the multiple annular channels 82 are nested and spaced from each other, for example, the multiple annular channels 82 are all arranged concentrically with the center of the bearing surface;
  • the second uniform air channel group (the first buffer cavity 91 in the second uniform air channel group is shown in FIG4 and described in detail later) surrounds the periphery of the outermost annular channel 82;
  • the multiple first connecting channels 81 are all located in the space surrounded by the innermost annular channel 82a, preferably, the multiple first connecting channels 81 are symmetrically distributed relative to the axis of the bearing surface, for example, symmetrically distributed relative to the center of the bearing surface, one end of each first connecting channel 81 is used as an air inlet 81a, and the other end
  • Multiple second connecting channels 83 between the outermost annular channel 82 and the second uniform air channel group (ie, the first buffer chamber 91 ) are arranged at circumferential intervals along the bearing surface; multiple second connecting channels 83 between every two adjacent annular channels 82 are arranged at circumferential intervals along the annular channel 82 .
  • the purge gas provided by the gas source can enter each first connecting channel 81 through the air inlet 81a, and then be transported to the innermost annular channel 82a through each first connecting channel 81, thereby completing the first gas homogenization process. Since a plurality of first connecting channels 81 are provided, this can make the purge gas be divided into multiple paths from the air inlet 81a, and simultaneously flow into the innermost annular channel 82a at multiple different positions on its circumference through a plurality of first connecting channels 81, so that the purge gas can be quickly spread in the circumference of the innermost annular channel 82a, and achieve uniform distribution in the circumferential direction, thereby improving the gas homogenization effect. Preferably, by symmetrically distributing the plurality of first connecting channels 81 relative to the axis of the bearing surface, the uniformity of the circumferential distribution of the purge gas can be further improved, thereby improving the gas homogenization effect.
  • the purge gas flows into the outer adjacent annular channel 82b through each second connecting channel 83a connected to the innermost annular channel 82a.
  • the purge gas flows into the next adjacent annular channel 82b through each corresponding second connecting channel 83b, and so on, until it flows into the outermost second uniform gas channel group (i.e., the first buffer chamber 91), thereby completing the second uniform gas process.
  • the above-mentioned first uniform gas channel group can be used to distribute the purge gas from the center of the bearing surface to the outermost second uniform gas channel group (i.e., the first buffer chamber 91).
  • the purge gas can be transported from the center of the bearing surface in different directions, and then through a plurality of annular channels 82 and a plurality of second connecting channels 83 connected thereto, the purge gas can be finally transported to different positions of the second gas uniformity channel group in the circumferential direction, thereby not only shortening the path of the purge gas and increasing the flow rate of the purge gas, but also further improving the uniformity of the purge gas.
  • the multiple annular channels 82 are interconnected, when the purge gas flows from the first connecting channels 81 or the second connecting channels 83 into the corresponding annular channels 82, it can quickly diffuse in the annular channels 82 to achieve uniform distribution in the circumferential direction, thereby solving the problem of uneven airflow distribution in the circumferential direction caused by directly delivering the purge gas to the outermost channel through a straight channel in the prior art.
  • the air resistance of the multiple interconnected annular channels 82 is smaller than that of the straight channel, and is not easily affected when the gas source pressure or flow rate fluctuates. This can effectively improve the uniformity of the circumferential distribution of the purge gas blown toward the edge of the wafer, thereby improving the process uniformity.
  • the number of annular channels 82 can be set according to specific needs. Of course, on the premise of meeting specific needs, the number of annular channels 82 can also be one.
  • the annular channel 82 is, for example, arranged along the circumference of the bearing surface; the second homogenizing channel group surrounds the periphery of the annular channel 82; a plurality of first connecting channels 81 are located in the space surrounded by the annular channel 82; the annular channel 82 and the second homogenizing channel group (i.e., the first buffer chamber 91) are connected through a plurality of second connecting channels 83.
  • the purge gas provided by the gas source can enter each first connecting channel 81 through the air inlet 81a, and then be transported to the annular channel 82 through each first connecting channel 81, thereby completing the first homogenizing process.
  • multiple second connecting channels 83 located on the same circumference are arranged at intervals along the circumference of the annular channel 82, and the second connecting channels 83 located on different circumferences are staggered.
  • the interlacing can improve the gas homogenization effect and ensure that the purge gas can evenly reach the second gas homogenization channel group.
  • the plurality of second connecting channels 83 located on the same circumference are evenly distributed along the circumference of the annular channel 82 , which can further improve the distribution uniformity of the purge gas in the circumferential direction.
  • the radial width of the innermost annular channel 82a is greater than the radial width of other annular channels 82b; the width of each second connecting channel 83a connected to the innermost annular channel 82a is greater than the width of each second connecting channel (e.g., second connecting channels 83b, 83c) on other different circumferences.
  • the innermost annular channel 82a can be used to quickly spread the purge gas in the circumferential direction to achieve uniform distribution in the circumferential direction, and it is not easily affected when the gas source pressure or flow fluctuates; on this basis, since the width of other annular channels 82b except the innermost annular channel 82a is small and the air resistance is large, it can effectively achieve a uniform gas effect and ensure that the purge gas can evenly reach the second uniform gas channel group.
  • the radial width of the innermost annular channel 82a can also be equal to the radial width of other annular channels 82b.
  • the width of each second connecting channel 83a connected to the innermost annular channel 82a may also be equal to the width of each second connecting channel on other different circumferences (for example, the second connecting channels 83b and 83c).
  • the radial widths of the other annular channels 82b except the innermost annular channel 82a are the same or decrease from the inside to the outside. This can also achieve the above-mentioned effects.
  • the widths of the second connecting channels (such as the second connecting channels 83b, 83c) on other different circumferences except the second connecting channels 83a connected to the innermost annular channel 82a are the same or decrease from the inside to the outside. This can also achieve the above-mentioned effects.
  • the radial width of the innermost annular channel 82a is the largest relative to the radial widths of the other annular channels 82b, but the present application is not limited to this.
  • the annular channel 82 with the largest radial width can also be multiple, that is, the radial width of at least one annular channel 82 close to the center of the bearing surface is
  • the radial width of the annular channel 82 is greater than the radial width of the other annular channels 82.
  • the number of annular channels 82 with the largest radial width can be set according to specific needs.
  • the radial width of the annular channel 82 is greater than the width of each second connecting channel. This can also achieve the above effect.
  • the width of the first connecting channel 81 is the same as the radial width of the innermost annular channel 82a, or the width of multiple first connecting channels 81 is greater than the radial width of the innermost annular channel 82a, which can also achieve the above effect.
  • first connecting channel 81 and the second connecting channel 83 are both arranged to extend radially along the bearing surface. Further, in some embodiments, the position where each first connecting channel 81 communicates with the innermost annular channel 82 is located at the middle position between two adjacent second connecting channels 83 that communicate with the annular channel 82. In this way, the purge gas flowing out of the first connecting channel 81 can reach the two nearest second connecting channels 83 through the same distance, thereby further improving the uniformity of gas distribution.
  • the position where the second connecting channel 83 on each circumference communicates with the annular channel 82 adjacent to the outer side is located at the middle position between two adjacent second connecting channels 83 on the circumference adjacent to the outer side. In this way, the purge gas flowing out of each second connecting channel 83 can reach the two nearest second connecting channels 83 on the circumference adjacent to the outer side through the same distance, thereby further improving the uniformity of gas distribution.
  • the second uniform air channel group includes a first buffer chamber 91, multiple first pressure-holding channels 92, a second buffer chamber 93 and multiple second pressure-holding channels 94, wherein the first buffer chamber 91 is annular and surrounds the periphery of the outermost annular channel 82, and is connected to the outermost annular channel 82 through multiple second connecting channels 83c; the second buffer chamber 93 is annular and is arranged at intervals above the first buffer chamber 91, and the second buffer chamber 93 is connected to the first buffer chamber 91 through multiple first pressure-holding channels 92; one end of the multiple second pressure-holding channels 94 are all connected to the second buffer chamber 93, and the other ends of the multiple second pressure-holding channels 94 are all used as the above-mentioned air outlets 94a.
  • the purge gas in the outermost annular channel 82 flows into the first In the buffer chamber 91, a uniform flow is performed once; then, the gas flows into the second buffer chamber 93 through each first pressure-holding channel 92, and a second uniform flow is performed, and finally, the purge gas is blown out toward the edge portion 4a of the wafer 4 placed on the carrying surface through the gas outlet 94a of each second pressure-holding channel 94.
  • the plurality of first pressure-holding channels 92 include a plurality of vertically arranged first through holes 92a and a plurality of vertically arranged second through holes 92b, wherein a first through hole 92a is arranged on both sides of each second connecting channel 83c connected to the first buffer chamber 91, and preferably, the two first through holes 92a on both sides of the second connecting channel 83c are symmetrically distributed relative to the second connecting channel 83c; a second through hole 92b is arranged on both sides of each second connecting channel 83c connected to the first buffer chamber 91, and preferably, the two second through holes 92b on both sides of the second connecting channel 83c are symmetrically distributed relative to the second connecting channel 83c; and the second through hole 92b is located on the side of the first through hole 92a on the same side away from the second connecting channel 83c.
  • each second connecting channel 83c can reach the two nearest first through holes 92a through the same distance, and then diffuse to the two nearest second through holes 92b through the same distance, thereby further improving the uniformity of gas distribution.
  • the above-mentioned second through hole 92b can be omitted according to specific needs.
  • Two through holes 92b that is, only one first through hole 92a is provided on both sides of each second connecting channel 83 connected to the first buffer cavity 91; or, two or more second through holes 92b can be provided on both sides of each second connecting channel 83 connected to the first buffer cavity 91, and the embodiment of the present application has no particular limitation on this.
  • multiple first through holes 92a and multiple second through holes 92b are equidistantly arranged in the circumferential direction.
  • annular groove is provided at the inner peripheral edge of the upper surface of the first annular flange 332, and the bottom surface of the annular groove is opposite to the edge area of the back side of the wafer 4, and there is a gap between the bottom surface of the annular groove and the edge area of the back side of the wafer 4 to constitute a part of the above-mentioned gas outlet 94a so that the purge gas can be blown out, and the annular side surface of the annular groove surrounds the wafer 4 to limit the position of the wafer 4.
  • a second annular step portion 312 is formed on the outer circumferential surface of the supporting body 3 and is located below the first annular step portion 311, and a second annular flange 333 is formed on the inner circumferential surface of the annular body 331 and is located below the first annular flange 332. At least a portion of the second annular flange 333 is superimposed on the second annular step portion 312, and the inner circumferential surface of the second annular flange 333, the outer circumferential surface of the first annular step portion 311, the upper surface of the second annular step portion 312 and the lower surface of the first annular flange 332 constitute the above-mentioned second buffer chamber 93.
  • corresponding recesses may be formed on the upper surface of the bottom plate 32 and the lower surface of the top plate 31 , and the recesses of the two together form a plurality of annular channels 82 , a plurality of first connecting channels 81 , a plurality of second connecting channels 83 and a first buffer chamber 91 .
  • a plurality of the above-mentioned first pressure-holding channels 92 are formed through the top plate 31, and the air outlet end of each first pressure-holding channel 92 is located on the upper surface of the second annular step portion 312.
  • a plurality of air inlet holes 321 are provided through the bottom plate 32, one end of the plurality of air inlet holes 321 is connected to the plurality of air inlets 81a in a one-to-one correspondence, and the other end of the plurality of air inlet holes 321 is used to connect to the air source.
  • the above-mentioned supporting body 3 is a split structure consisting of a top plate 31 and a bottom plate 32. In combination with the above-mentioned edge ring 33, the structure is simple and easy to process and manufacture, thereby greatly reducing the application and manufacturing costs.
  • the top plate 31 and the bottom plate 32 are sealed and connected by welding.
  • the carrier device further includes a support shaft 6, which is vertically arranged, and the upper end of the support shaft 6 is fixedly connected to the bottom plate 32 at its center position, for example, by welding.
  • Each air inlet hole 321 in the bottom plate 32 can be connected to an external air source through an air inlet channel 62 arranged in the support shaft 6.
  • the support shaft 6 is, for example, liftable.
  • the lower end of the support shaft 6 can extend from the bottom of the process chamber of the semiconductor process equipment so as to be connected to an external lifting drive source.
  • a bellows is sleeved on the support shaft 6 to seal the gap between the support shaft 6 and the process chamber, thereby ensuring the sealing of the process chamber.
  • the top plate 31 may be a disc-shaped plate structure made of ceramic material.
  • the bottom plate 32 may be a disc-shaped plate structure made of ceramic material.
  • a heating element 7 may be provided in the top plate 31 or the bottom plate 32.
  • the heating element 7 may be, for example, a heating wire or a heating tube, for heating the wafer 4.
  • the heating elements 7 may be provided in different areas of the top plate 31 or the bottom plate 32.
  • the two elements are provided in correspondence with the central area and the edge area of the top plate 31 or the bottom plate 32, respectively, to achieve zoned temperature control.
  • a corresponding concave channel is formed on the lower surface of the top plate 31, and the concave channel and the upper surface of the bottom plate 31 are enclosed to form a plurality of annular channels 82, a plurality of first connecting channels 81, a plurality of second connecting channels 83 and a first buffer chamber 91.
  • FIG5 is a graph of the gas flow rate and the chuck diameter of the carrier provided in the related art.
  • FIG6 is a graph of the gas flow rate and the chuck diameter of the carrier provided in the embodiment of the present application.
  • FIG7 is a comparison diagram of the curve shown in FIG5 and the curve shown in FIG6.
  • the carrier provided in the related art shown in FIG1 the purge channel structure adopted by the carrier is shown in FIG1, specifically, the purge gas is drained to the buffer cavity 2 at the edge of the chuck through multiple horizontal straight channels 1, and then the purge gas is drained to the edge of the wafer 4 through the corresponding channel, so that the purge gas can be blown out toward the back and side of the wafer 4.
  • the curves shown in FIG6 and FIG7 are obtained by simulation calculation using the same simulation conditions, and the simulation conditions are: the purge gas provided by the gas source is argon (Ar), the inlet flow rate is 800sccm, and the inlet temperature is room temperature; the temperature of the heating element in the carrier is 400°C; the chamber wall temperature of the process chamber is 120°C.
  • the gas flow fluctuation of the purge gas in the carrier provided in the embodiment of the present application is small, and the gas flow uniformity is better.
  • an embodiment of the present application further provides a semiconductor process equipment, including a process chamber and a carrying device arranged in the process chamber, and the carrying device adopts the above-mentioned carrying device provided in the embodiment of the present application.
  • the semiconductor process equipment provided in the embodiment of the present application can effectively improve the circumferential distribution uniformity of the purge gas blown toward the edge portion of the wafer by adopting the above-mentioned supporting device provided in the embodiment of the present application, thereby improving the process uniformity.

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Abstract

本申请提供一种承载装置和半导体工艺设备，该装置中，第二匀气通道组环绕于环形通道的外围；多个第一连接通道位于环形通道所围空间中，每个第一连接通道的一端用作进气口，另一端与环形通道连通；环形通道与第二匀气通道组之间通过多个第二连接通道连通；并且，多个第二连接通道沿环形通道的周向间隔设置。本方案可以有效提高朝晶圆的边缘部分吹出的吹扫气体在周向上的分布均匀性，从而可以提高工艺均匀性。

Description

承载装置和半导体工艺设备 技术领域
本申请涉及半导体制造领域，具体地，涉及一种承载装置和半导体工艺设备。
背景技术
原子层沉积(Atomic Layer Deposition，ALD)设备和化学气相沉积(Chemical Vapor Deposition，CVD)设备广泛应用于当今的集成电路半导体制作工艺中。为避免晶圆(Wafer)有侧镀和背镀，用于承载晶圆的承载装置(例如基座)配备有边缘吹扫(Edge Purge)功能，用于将晶圆背面和侧面的反应气体吹走，从而避免晶圆有侧镀和背镀。
如图1所示，现有的承载装置中的吹扫通道结构是通过多个水平直通道1将吹扫气体引流至卡盘的边缘处的缓冲腔2中，再通过相应的通道将吹扫气体引流至晶圆的边缘部分，以能够朝晶圆背面和侧面吹出吹扫气体。图1中仅示出了水平直通道1和缓冲腔2。但是，由于多个水平直通道1在周向上排布的数量有限，导致在周向上气流分布均匀性较差，而且水平直通道1很容易受到气源压力或流量产生波动的影响，这也会造成气流均匀性差。此外，当卡盘上的诸如焊料等物质流入水平直通道1中时，会减小通道宽度或深度，导致通道气阻变大、不同通道的气阻出现差异等问题，从而导致到达卡盘边缘处的缓冲腔2中的气流分布不均匀，最终导致朝晶圆的边缘部分吹出的吹扫气体在周向上的分布均匀性较差。
发明内容
本申请旨在至少解决现有技术中存在的技术问题之一，提出了一种承载 装置和半导体工艺设备，其可以有效提高朝晶圆的边缘部分吹出的吹扫气体在周向上的分布均匀性，从而可以提高工艺均匀性。
为实现本申请的目的而提供一种承载装置，包括用于承载晶圆的承载面，所述承载装置中设置有用于输送吹扫气体的吹扫通道结构，所述吹扫通道结构包括相互连通的第一匀气通道组和第二匀气通道组，所述第一匀气通道组具有用于与气源连接的进气口；所述第二匀气通道组具有用于朝向置于所述承载面上的晶圆的边缘部分吹出所述吹扫气体的出气口；
所述第一匀气通道组包括至少一个环形通道、多个第一连接通道和多个第二连接通道，所述第二匀气通道组环绕于所述环形通道的外围；
多个所述第一连接通道均位于所述环形通道所围空间中，每个所述第一连接通道的一端用作所述进气口，另一端与所述环形通道连通；
所述环形通道与所述第二匀气通道组之间通过多个所述第二连接通道连通；并且，多个所述第二连接通道沿所述环形通道的周向间隔设置。
在一些实施例中，所述环形通道为多个，且相互嵌套并间隔设置；
每相邻两个所述环形通道之间，以及最外侧的所述环形通道与所述第二匀气通道组之间均通过多个所述第二连接通道连通；并且，位于同一圆周上的多个所述第二连接通道沿所在圆周间隔设置，位于不同圆周上的所述第二连接通道之间相互交错；
多个所述第一连接通道均位于最内侧的所述环形通道所围空间中，所述第一连接通道的另一端与最内侧的所述环形通道连通；所述第二匀气通道组环绕于最外侧的所述环形通道的外围。
在一些实施例中，多个所述第二连接通道沿所述环形通道的周向均匀分布。
在一些实施例中，最内侧的所述环形通道的径向宽度大于其他所述环形通道的径向宽度；
与最内侧的所述环形通道连通的各所述第二连接通道的宽度大于其他不同圆周上的各所述第二连接通道的宽度。
在一些实施例中，除最内侧的所述环形通道之外的其他所述环形通道的径向宽度相同或者由内向外递减。
在一些实施例中，除与最内侧的所述环形通道连通的各所述第二连接通道之外的其他不同圆周上的各所述第二连接通道的径向宽度相同或者由内向外递减。
在一些实施例中，所述第一连接通道和所述第二连接通道均沿所述承载面的径向延伸设置；
每个所述第一连接通道与最内侧的所述环形通道连通的位置位于与该环形通道连通的其中两个相邻的所述第二连接通道之间的中间位置。
在一些实施例中，每个圆周上的所述第二连接通道与外侧相邻的所述环形通道连通的位置位于外侧相邻的圆周上的其中两个相邻的所述第二连接通道之间的中间位置。
在一些实施例中，所述第二匀气通道组包括第一缓冲腔、多个第一憋压通道、第二缓冲腔和多个第二憋压通道，其中，
所述第一缓冲腔呈环状，且环绕于最外侧的所述环形通道的外围，且与最外侧的所述环形通道之间通过多个所述第二连接通道连通；
所述第二缓冲腔呈环状，且间隔设置于所述第一缓冲腔的上方，并且所述第二缓冲腔与所述第一缓冲腔之间通过多个所述第一憋压通道连通；
多个所述第二憋压通道的一端均与所述第二缓冲腔连通，多个所述第二憋压通道的另一端均用作所述出气口。
在一些实施例中，所述第一缓冲腔的容积小于或等于所述第二缓冲腔的容积。
在一些实施例中，多个所述第一憋压通道包括多个竖直设置的第一通孔 和多个竖直设置的第二通孔，其中，与所述第一缓冲腔连通的每个所述第二连接通道的两侧均设置有一个所述第一通孔；
与所述第一缓冲腔连通的每个所述第二连接通道的两侧均设置一个所述第二通孔，并且所述第二通孔位于与之同侧的所述第一通孔远离所述第二连接通道的一侧。
在一些实施例中，所述承载装置包括承载主体和边缘环，其中，所述承载主体具有所述承载面，且所述承载面的直径小于所述晶圆的直径，以使所述晶圆的边缘部分能够位于所述承载面之外；所述承载主体的外周面顶部形成有第一环形台阶部，
所述边缘环包括环形主体，在所述环形主体的内周面设置有第一环形凸缘，所述第一环形凸缘间隔设置于所述第一环形台阶部上方，且所述第一环形凸缘的至少一部分位于所述晶圆下方，并且所述第一环形凸缘的下表面和内周面分别与所述第一环形台阶部的上表面和所述承载主体的外周面之间构成所述第二憋压通道；
所述承载主体的外周面且位于所述第一环形台阶部下方形成有第二环形台阶部，所述环形主体的内周面且位于所述第一环形凸缘的下方形成有第二环形凸缘，所述第二环形凸缘的至少一部分叠置于所述第二环形台阶部上，且所述第二环形凸缘的内周面、所述第一环形台阶部的外周面、所述第二环形台阶部的上表面和所述第一环形凸缘的下表面之间构成所述第二缓冲腔。
在一些实施例中，所述承载主体包括顶板和叠置于所述顶板的下表面的底板，其中，在所述底板的上表面与所述顶板的下表面之间形成有多个所述环形通道、多个所述第一连接通道、多个所述第二连接通道和所述第一缓冲腔；
所述顶板中贯通形成有多个所述第一憋压通道，且各所述第一憋压通道的出气端均位于所述第二环形台阶部的上表面；
所述底板中贯通设置有多个进气孔，多个所述进气孔的一端与多个所述进气口一一对应地连通，多个所述进气孔的另一端用于与所述气源连通。
作为另一个技术方案，本申请还提高一种半导体工艺设备，包括工艺腔室和设置于所述工艺腔室中的承载装置，所述承载装置采用本申请提供的上述承载装置。
本申请具有以下有益效果：
本申请提供的承载装置，吹扫气体从第一匀气通道组的进气口进入时，首先从多个第一连接通道流入环形通道，由于设置有多个第一连接通道，这可以使吹扫气体可以自进气口分成多路，并通过多个第一连接通道同时流入环形通道在其周向上的多个不同位置，从而可以使吹扫气体能够在环形通道的周向上快速铺开，实现在周向上分布均匀，进而可以提高气体的匀气效果。然后，环形通道中的吹扫气体通过与该环形通道连通的各第二连接通道流入最外侧的第二匀气通道组，并由该第二匀气通道组输送，最终从其出气口朝向置于承载面上的晶圆的边缘部分吹出，实现对晶圆背面和侧面的吹扫。吹扫气体从各第一连接通道流入环形通道中时，可以在环形通道中快速扩散，实现在周向上分布均匀，从而可以解决现有技术中利用直通道直接将吹扫气体输送至最外侧通道而导致的在周向上气流分布不均匀的问题，而且环形通道的气阻比直通道的气阻更小，不容易在气源压力或流量产生波动时受到影响，进而可以有效提高朝晶圆的边缘部分吹出的吹扫气体在周向上的分布均匀性，从而可以提高工艺均匀性。
本申请提供的半导体工艺设备，其通过采用本申请提供的上述承载装置，可以有效提高朝晶圆的边缘部分吹出的吹扫气体在周向上的分布均匀性，从而可以提高工艺均匀性。
附图说明
图1为相关技术采用的承载装置中的水平直通道和缓冲腔的结构图；
图2为本申请实施例提供的承载装置的剖视图；
图3A为图2中的承载装置的局部放大图；
图3B为图2中的承载装置的局部放大图；
图4为本申请实施例提供的吹扫通道结构中的第一匀气通道组的俯视图；
图5为相关技术中提供的承载装置的关于气体流速与卡盘直径的曲线图；
图6为本申请实施例提供的承载装置关于气体流速与卡盘直径的曲线图。
图7为图5示出的曲线和图6示出的曲线的对比图。
具体实施方式
为使本领域的技术人员更好地理解本申请的技术方案，下面结合附图来对本申请提供的承载装置和半导体工艺设备进行详细描述。
请一并参阅图2至图4，本申请实施例提供一种承载装置，包括用于承载晶圆4的承载面，该承载装置中设置有用于输送吹扫气体的吹扫通道结构，该吹扫通道结构包括相互连通的第一匀气通道组和第二匀气通道组，第一匀气通道组具有用于与气源连接的进气口，该第一匀气通道组用于将来自气源的吹扫气体输送至第二匀气通道组，同时对吹扫气体进行匀气；第二匀气通道组具有用于朝向置于承载面上的晶圆4的边缘部分4a吹出吹扫气体的出气口94a，该第二匀气通道组用于将经第一匀气通道组匀气后的吹扫气体输送至承载面上的晶圆4边缘处，同时进一步对吹扫气体进行匀气，最终从其出气口94a朝向置于晶圆4的边缘部分吹出，实现对晶圆4背面和侧面的吹扫。
具体地，上述第一匀气通道组包括至少一个环形通道82、多个第一连接 通道81和多个第二连接通道83，其中，以环形通道82为多个为例，多个环形通道82相互嵌套并间隔，例如多个环形通道82均与承载面的中心同心设置；第二匀气通道组(图4中示出了该第二匀气通道组中的第一缓冲腔91，在后文中详细描述)环绕于最外侧的环形通道82的外围；多个第一连接通道81均位于最内侧的环形通道82a所围空间中，优选地，多个第一连接通道81相对于承载面的轴线对称分布，例如相对于承载面的中心对称分布，每个第一连接通道81的一端用作进气口81a，另一端与最内侧的环形通道82a连通；每相邻两个环形通道82之间，以及最外侧的环形通道82与第二匀气通道组(即，第一缓冲腔91)之间均通过多个第二连接通道83连通。位于最外侧的环形通道82与第二匀气通道组(即，第一缓冲腔91)之间的多个第二连接通道83沿承载面的周向间隔设置；每相邻两个环形通道82之间的多个第二连接通道83沿环形通道82的周向间隔设置。
由气源提供的吹扫气体可以经由进气口81a进入各第一连接通道81，再经由各第一连接通道81输送至最内侧的环形通道82a中，由此完成第一次匀气过程。由于设置有多个第一连接通道81，这可以使吹扫气体自进气口81a分成多路，并通过多个第一连接通道81同时流入最内侧的环形通道82a在其周向上的多个不同位置，从而可以使吹扫气体能够在最内侧的环形通道82a的周向上快速铺开，实现在周向上分布均匀，进而可以提高气体的匀气效果。优选地，通过使多个第一连接通道81相对于承载面的轴线对称分布，可以进一步提高吹扫气体在周向上分布的均匀性，进而可以提高气体的匀气效果。
然后，吹扫气体经由与最内侧的环形通道82a连通的各第二连接通道83a流入外侧相邻的环形通道82b，在由该环形通道82b在周向上将吹扫气体均匀铺开之后，再由相应的各第二连接通道83b流入下一相邻的环形通道82b，以此类推，直至流入最外侧的第二匀气通道组(即，第一缓冲腔91)，由此完成第二次匀气过程。上述第一匀气通道组可以将吹扫气体由承载面的中心 向边缘输送，以能够输送至最外侧的第二匀气通道组。另外，通过采用多个第一连接通道81，可以将吹扫气体从靠近承载面的中心位置沿不同方向输送，再经由多个环形通道82和将其连通的多个第二连接通道83，最终可以将吹扫气体输送至第二匀气通道组周向上的不同位置，从而不仅可以缩短吹扫气体的路径，提高吹扫气体的流动速率，而且还可以进一步提高吹扫气体的均匀性。
由于多个环形通道82相互连通，吹扫气体从各第一连接通道81或各第二连接通道83流入相应的环形通道82中时，可以在环形通道82中快速扩散，实现在周向上分布均匀，从而可以解决现有技术中利用直通道直接将吹扫气体输送至最外侧通道而导致的在周向上气流分布不均匀的问题，而且多个连通的环形通道82的气阻比直通道的气阻更小，不容易在气源压力或流量产生波动时受到影响，进而可以有效提高朝晶圆的边缘部分吹出的吹扫气体在周向上的分布均匀性，从而可以提高工艺均匀性。
容易理解的是，环形通道82的数量越多，对吹扫气体的匀气次数就越多，吹扫气体在周向上分布地越均匀。在实际应用中，可以根据具体需要设定环形通道82的数量，当然，在满足具体需要的前提下，环形通道82的数量也可以为一个，在这种情况下，环形通道82例如沿承载面的周向设置；第二匀气通道组环绕于该环形通道82的外围；多个第一连接通道81位于该环形通道82所围空间中；环形通道82与第二匀气通道组(即，第一缓冲腔91)之间通过多个第二连接通道83连通。由气源提供的吹扫气体可以经由进气口81a进入各第一连接通道81，再经由各第一连接通道81输送至环形通道82中，由此完成第一次匀气过程。
在一些实施例中，以环形通道82为多个为例，位于同一圆周上的多个第二连接通道83沿环形通道82的周向间隔设置，位于不同圆周上的第二连接通道83之间相互交错。通过使位于不同圆周上的第二连接通道83之间相 互交错，可以提高对气体的匀气效果，保证吹扫气体能够均匀地到达第二匀气通道组。
进一步地，在一些实施例中，位于同一圆周上的多个第二连接通道83沿环形通道82的周向均匀分布，这样可以进一步提高吹扫气体在周向上的分布均匀性。
在一些实施例中，最内侧的环形通道82a的径向宽度大于其他环形通道82b的径向宽度；与最内侧的环形通道82a连通的各第二连接通道83a的宽度大于其他不同圆周上的各第二连接通道(例如第二连接通道83b、83c)的宽度。由于最内侧的环形通道82a的径向宽度较大，其气阻较小，从而可以利用最内侧的环形通道82a将吹扫气体快速在周向上铺开，实现在周向上分布均匀，而且不容易在气源压力或流量产生波动时受到影响；在此基础上，由于除最内侧的环形通道82a之外的其他环形通道82b的宽度较小，气阻较大，从而可以有效起到匀气效果，保证吹扫气体能够均匀地到达第二匀气通道组。当然，在实际应用中，根据具体需要，最内侧的环形通道82a的径向宽度也可以等于其他环形通道82b的径向宽度。另外，与最内侧的环形通道82a连通的各第二连接通道83a的宽度也可以等于其他不同圆周上的各第二连接通道(例如第二连接通道83b、83c)的宽度。
进一步地，在一些实施例中，除最内侧的环形通道82a之外的其他环形通道82b的径向宽度相同或者由内向外递减。这同样可以实现上述效果。进一步地，在一些实施例中，除与最内侧的环形通道82a连通的各第二连接通道83a之外的其他不同圆周上的各第二连接通道(例如第二连接通道83b、83c)的宽度相同或者由内向外递减。这同样可以实现上述效果。在本实施例中，最内侧的环形通道82a的径向宽度相对于其他环形通道82b的径向宽度最大，但是，本申请并不局限于此，在实际应用中，径向宽度最大的环形通道82还可以为多个，即靠近承载面中心的至少一个环形通道82的径向宽度 大于其他的环形通道82的径向宽度。可以根据具体需要设定径向宽度最大的环形通道82的数量。或者，在环形通道82为一个的情况下，该环形通道82的径向宽度大于各第二连接通道的宽度。这同样可以实现上述效果。
另外，在一些实施例中，第一连接通道81的宽度与最内侧的环形通道82a的径向宽度相同，或者多个第一连接通道81的宽度大于最内侧的环形通道82a的径向宽度，这同样可以实现上述效果。
在一些实施例中，第一连接通道81和第二连接通道83均沿承载面的径向延伸设置。进一步地，在一些实施例中，每个第一连接通道81与最内侧的环形通道82连通的位置位于与该环形通道82连通的其中两个相邻的第二连接通道83之间的中间位置。这样，由第一连接通道81流出的吹扫气体可以经过相同的距离到达最近的两个第二连接通道83，从而可以进一步提高气体分布均匀性。
在一些实施例中，每个圆周上的第二连接通道83与外侧相邻的环形通道82连通的位置位于与外侧相邻的圆周上的其中两个相邻的第二连接通道83之间的中间位置。这样，由各第二连接通道83流出的吹扫气体可以经过相同的距离到达外侧相邻的圆周上的最近的两个第二连接通道83，从而可以进一步提高气体分布均匀性。
在一些实施例中，第二匀气通道组包括第一缓冲腔91、多个第一憋压通道92、第二缓冲腔93和多个第二憋压通道94，其中，第一缓冲腔91呈环状，且环绕于最外侧的环形通道82的外围，且与最外侧的环形通道82之间通过多个第二连接通道83c连通；第二缓冲腔93呈环状，且间隔设置于第一缓冲腔91的上方，并且第二缓冲腔93与第一缓冲腔91之间通过多个第一憋压通道92连通；多个第二憋压通道94的一端均与第二缓冲腔93连通，多个第二憋压通道94的另一端均用作上述出气口94a。
最外侧的环形通道82中的吹扫气体经由各第二连接通道83c流入第一 缓冲腔91中，进行一次匀流；再经由各第一憋压通道92流入第二缓冲腔93中，进行二次匀流，最后经由各第二憋压通道94的出气口94a朝向置于承载面上的晶圆4的边缘部分4a吹出吹扫气体。由于经由两个缓冲腔对吹扫气体进行二次匀流，同时上述第一憋压通道92和第二憋压通道94可以分别对经第一缓冲腔91和第二缓冲腔93输出的吹扫气体起到增压作用，这使得吹出的吹扫气体更加均匀，从而进一步提高晶圆4边缘吹扫的均匀性，进一步提高晶圆4的工艺均匀性以及提高工艺良率。
在一些实施例中，第一缓冲腔91的容积小于或等于第二缓冲腔93的容积。承载面中的顶板31(在后文中详细描述)通常采用陶瓷材料制作，在第一缓冲腔91形成于该顶板31的情况下，通过采用较小容积的第一缓冲腔91，更方便陶瓷的加工，使得陶瓷在热压烧结过程中不容易碎裂，提高产品成品率。需要说明的是，本申请通过利用环形通道82和各第二连接通道83来实现吹扫气体在周向上分布均匀，即使采用较小的第一缓冲腔91的容积，也可以保证较好的匀气效果。
在一些实施例中，如图4所示，多个第一憋压通道92包括多个竖直设置的第一通孔92a和多个竖直设置的第二通孔92b，其中，与第一缓冲腔91连通的每个第二连接通道83c的两侧均设置有一个第一通孔92a，优选地，位于该第二连接通道83c的两侧的两个第一通孔92a相对于该第二连接通道83c对称分布；与第一缓冲腔91连通的每个第二连接通道83c的两侧均设置有一个第二通孔92b，优选地，位于该第二连接通道83c的两侧的两个第二通孔92b相对于该第二连接通道83c对称分布；并且，第二通孔92b位于与之同侧的第一通孔92a远离第二连接通道83c的一侧。这样，由各第二连接通道83c流出的吹扫气体可以经过相同的距离到达最近的两个第一通孔92a，然后再经过相同的距离扩散至最近的两个第二通孔92b，从而可以进一步提高气体分布均匀性。当然，在实际应用中，根据具体需要也可以省去上述第 二通孔92b，即仅在与第一缓冲腔91连通的每个第二连接通道83的两侧均设置有一个第一通孔92a；或者，还可以在与第一缓冲腔91连通的每个第二连接通道83的两侧均设置两个及以上的第二通孔92b，本申请实施例对此没有特别的限制。进一步地，在一些实施例中，多个第一通孔92a和多个第二通孔92b在周向上等距设置。
在一些实施例中，承载装置包括承载主体3和边缘环33，其中，承载主体3具有上述承载面，且承载面的直径小于晶圆4的直径，以使晶圆4的边缘部分4a能够位于承载面之外；如图3A和图3B所示，承载主体3的外周面顶部形成有第一环形台阶部311。边缘环33包括环形主体331，在环形主体331的内周面设置有第一环形凸缘332，第一环形凸缘332间隔设置于第一环形台阶部311上方，且第一环形凸缘332的至少一部分位于晶圆4下方，并且第一环形凸缘332的下表面和内周面分别与第一环形台阶部311的上表面和顶板31的外周面之间构成上述第二憋压通道94。进一步地，在一些实施例中，第一环形凸缘332的上表面的内周边缘处设置有环形凹槽，该环形凹槽的底面与晶圆4背面的边缘区域相对，且该环形凹槽的底面与晶圆4背面的边缘区域之间具有间隙，以构成上述出气口94a的一部分，使吹扫气体能够吹出，该环形凹槽的环形侧面环绕于晶圆4的周围，用于限定晶圆4的位置。
承载主体3的外周面且位于第一环形台阶部311下方形成有第二环形台阶部312，环形主体331的内周面且位于第一环形凸缘332的下方形成有第二环形凸缘333，第二环形凸缘333的至少一部分叠置于第二环形台阶部312上，且第二环形凸缘333的内周面、第一环形台阶部311的外周面、第二环形台阶部312的上表面和第一环形凸缘332的下表面之间构成上述第二缓冲腔93。
在一些实施例中，承载主体3包括顶板31和底板32，其中，底板32 叠置于顶板31的下表面；并且，在底板32的上表面与顶板31的下表面之间形成有多个环形通道82、多个第一连接通道81、多个第二连接通道83和第一缓冲腔91。进一步地，在一些实施例中，可以在底板32的上表面与顶板31的下表面中的至少一者形成相应的凹道，例如可以在底板32的上表面形成相应的凹道，该凹道与顶板31的下表面合围形成多个环形通道82、多个第一连接通道81、多个第二连接通道83和第一缓冲腔。或者，也可以在顶板的下表面形成相应的凹道，该凹道与底板的上表面合围形成多个环形通道82、多个第一连接通道81、多个第二连接通道83和第一缓冲腔。或者，还可以在底板32的上表面与顶板31的下表面对应形成相应的凹道，二者的凹道合围形成多个环形通道82、多个第一连接通道81、多个第二连接通道83和第一缓冲腔91。
顶板31中贯通形成有多个上述第一憋压通道92，且各第一憋压通道92的出气端均位于第二环形台阶部312的上表面。底板32中贯通设置有多个进气孔321，多个进气孔321的一端与多个进气口81a一一对应地连通，多个进气孔321的另一端用于与气源连通。上述承载主体3是由顶板31和底板32构成的分体式结构，结合使用上述边缘环33，该结构简单且易于加工制造，从而大幅降低应用及制造成本。在一些实施例中，顶板31和底板32之间采用焊接的方式密封连接。
在一些实施例中，承载装置还包括支撑轴6，该支撑轴6竖直设置，支撑轴6的上端与底板32在其中心位置例如采用焊接的方式固定连接。底板32中的各进气孔321可通过设置于支撑轴6中的进气通道62与外部的气源连通。该支撑轴6例如是可升降的，在这种情况下，支撑轴6的下端可以自半导体工艺设备的工艺腔室的底部伸出，以能够与外部的升降驱动源连接，此外支撑轴6上套设有波纹管，用以对支撑轴6与工艺腔室之间的间隙进行密封，从而保证工艺腔室的密封性。
在一些实施例中，顶板31可以采用陶瓷材质制成的圆盘形板状结构。底板32可以采用陶瓷材质制成的圆盘形板状结构。
在一些实施例中，顶板31内或底板32内可以设置有加热元件7，该加热元件7例如为加热丝或加热管，用于对晶圆4进行加热，而且可以对应顶板31或底板32内不同区域分别设置加热元件7，例如如图2所示，该加热元件7为两个，分别为第一加热元件71和第二加热元件72，二者分别与顶板31或底板32的中心区域和边缘区域对应设置，以实现分区控温。
在一些实施例中，为了实现承载装置的真空吸附功能，承载主体3(顶板31和底板32)中还设置有多个贯通承载主体3的吸附孔5，例如图4中示出了四个吸附孔5，且多个吸附孔5沿承载主体3的周向均匀分布，且与进气口81a相互错开。各吸附孔5可通过设置于支撑轴6中的吸附通道61与外部的真空吸附装置连通。
在一个具体的实施例中，在顶板31的下表面形成相应的凹道，该凹道与底板31的上表面合围形成多个环形通道82、多个第一连接通道81、多个第二连接通道83和第一缓冲腔91。其中，环形通道82为三个，且等间距设置；最内侧的环形通道82a的径向宽度大于另外两个环形通道82b的径向宽度，另外两个环形通道82b的径向宽度相同。第一连接通道81为两个，第一连接通道81的宽度与最内侧的环形通道82a的径向宽度相同，例如为6mm。与最内侧的环形通道82a连通的各第二连接通道83a的宽度大于其他不同圆周上的各第二连接通道(例如第二连接通道83b、83c)的宽度；其他不同圆周上的各第二连接通道(例如第二连接通道83b、83c)的宽度相同，例如为3mm。与最内侧的环形通道82a连通的第二连接通道83a的数量为4个，且不同圆周上的第二连接通道(例如第二连接通道83b、83c)的数量由内而外递增，且增幅为2倍。多个第一憋压通道92包括多个竖直设置的第一通孔92a和多个竖直设置的第二通孔92b，多个第一通孔92a和多个第二通孔92b 的总数为48个，其中，第一通孔92a为32个，第二通孔92b为16个。上述环形通道82、第一连接通道81和第二连接通道83的深度相同，例如为2mm。
图5为相关技术中提供的承载装置的关于气体流速与卡盘直径的曲线图。图6为本申请实施例提供的承载装置关于气体流速与卡盘直径的曲线图。图7为图5示出的曲线和图6示出的曲线的对比图。图1示出的相关技术中提供的承载装置，其采用的吹扫通道结构如图1所示，具体是通过多个水平直通道1将吹扫气体引流至卡盘的边缘处的缓冲腔2中，再通过相应的通道将吹扫气体引流至晶圆4的边缘部分，以能够朝晶圆4背面和侧面吹出吹扫气体。图6和图7示出的曲线均是采用相同的仿真条件进行仿真计算得到的，仿真条件为：气源提供的吹扫气体为氩气(Ar)，进气流量为800sccm，进气温度为室温；承载装置中的加热元件的温度为400℃；工艺腔室的腔室壁温度为120℃。通过对比可知，吹扫气体在本申请实施例提供的承载装置中的气体流动波动较小，气流均匀性更好。
作为另一个技术方案，本申请实施例还提供一种半导体工艺设备，包括工艺腔室和设置于工艺腔室中的承载装置，承载装置采用本申请实施例提供的上述承载装置。
本申请实施例提供的半导体工艺设备，其通过采用本申请实施例提供的上述承载装置，可以有效提高朝晶圆的边缘部分吹出的吹扫气体在周向上的分布均匀性，从而可以提高工艺均匀性。
可以理解的是，以上实施方式仅仅是为了说明本申请的原理而采用的示例性实施方式，然而本申请并不局限于此。对于本领域内的普通技术人员而言，在不脱离本申请的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本申请的保护范围。

Claims (14)

  1. 一种承载装置，包括用于承载晶圆的承载面，其特征在于，所述承载装置中设置有用于输送吹扫气体的吹扫通道结构，所述吹扫通道结构包括相互连通的第一匀气通道组和第二匀气通道组，所述第一匀气通道组具有用于与气源连接的进气口；所述第二匀气通道组具有用于朝向置于所述承载面上的晶圆的边缘部分吹出所述吹扫气体的出气口；
    所述第一匀气通道组包括至少一个环形通道、多个第一连接通道和多个第二连接通道，所述第二匀气通道组环绕于所述环形通道的外围；
    多个所述第一连接通道均位于所述环形通道所围空间中，每个所述第一连接通道的一端用作所述进气口，另一端与所述环形通道连通；
    所述环形通道与所述第二匀气通道组之间通过多个所述第二连接通道连通；并且，多个所述第二连接通道沿所述环形通道的周向间隔设置。
  2. 根据权利要求1所述的承载装置，其特征在于，所述环形通道为多个，且相互嵌套并间隔设置；
    每相邻两个所述环形通道之间，以及最外侧的所述环形通道与所述第二匀气通道组之间均通过多个所述第二连接通道连通；并且，位于同一圆周上的多个所述第二连接通道沿所在圆周间隔设置，位于不同圆周上的所述第二连接通道之间相互交错；
    多个所述第一连接通道均位于最内侧的所述环形通道所围空间中，所述第一连接通道的另一端与最内侧的所述环形通道连通；所述第二匀气通道组环绕于最外侧的所述环形通道的外围。
  3. 根据权利要求1所述的承载装置，其特征在于，多个所述第二连接通道沿所述环形通道的周向均匀分布。
  4. 根据权利要求2所述的承载装置，其特征在于，最内侧的所述环形通道的径向宽度大于其他所述环形通道的径向宽度；
    与最内侧的所述环形通道连通的各所述第二连接通道的宽度大于其他不同圆周上的各所述第二连接通道的宽度。
  5. 根据权利要求4所述的承载装置，其特征在于，除最内侧的所述环形通道之外的其他所述环形通道的径向宽度相同或者由内向外递减。
  6. 根据权利要求4所述的承载装置，其特征在于，除与最内侧的所述环形通道连通的各所述第二连接通道之外的其他不同圆周上的各所述第二连接通道的径向宽度相同或者由内向外递减。
  7. 根据权利要求2所述的承载装置，其特征在于，所述第一连接通道和所述第二连接通道均沿所述承载面的径向延伸设置；
    每个所述第一连接通道与最内侧的所述环形通道连通的位置位于与该环形通道连通的其中两个相邻的所述第二连接通道之间的中间位置。
  8. 根据权利要求7所述的承载装置，其特征在于，每个圆周上的所述第二连接通道与外侧相邻的所述环形通道连通的位置位于外侧相邻的圆周上的其中两个相邻的所述第二连接通道之间的中间位置。
  9. 根据权利要求1-8中任意一项所述的承载装置，其特征在于，所述第二匀气通道组包括第一缓冲腔、多个第一憋压通道、第二缓冲腔和多个第二憋压通道，其中，
    所述第一缓冲腔呈环状，且环绕于最外侧的所述环形通道的外围，且与最外侧的所述环形通道之间通过多个所述第二连接通道连通；
    所述第二缓冲腔呈环状，且间隔设置于所述第一缓冲腔的上方，并且所 述第二缓冲腔与所述第一缓冲腔之间通过多个所述第一憋压通道连通；
    多个所述第二憋压通道的一端均与所述第二缓冲腔连通，多个所述第二憋压通道的另一端均用作所述出气口。
  10. 根据权利要求9所述的承载装置，其特征在于，所述第一缓冲腔的容积小于或等于所述第二缓冲腔的容积。
  11. 根据权利要求9所述的承载装置，其特征在于，多个所述第一憋压通道包括多个竖直设置的第一通孔和多个竖直设置的第二通孔，其中，与所述第一缓冲腔连通的每个所述第二连接通道的两侧均设置有一个所述第一通孔；
    与所述第一缓冲腔连通的每个所述第二连接通道的两侧均设置一个所述第二通孔，并且所述第二通孔位于与之同侧的所述第一通孔远离所述第二连接通道的一侧。
  12. 根据权利要求9所述的承载装置，其特征在于，所述承载装置包括承载主体和边缘环，其中，所述承载主体具有所述承载面，且所述承载面的直径小于所述晶圆的直径，以使所述晶圆的边缘部分能够位于所述承载面之外；所述承载主体的外周面顶部形成有第一环形台阶部，
    所述边缘环包括环形主体，在所述环形主体的内周面设置有第一环形凸缘，所述第一环形凸缘间隔设置于所述第一环形台阶部上方，且所述第一环形凸缘的至少一部分位于所述晶圆下方，并且所述第一环形凸缘的下表面和内周面分别与所述第一环形台阶部的上表面和所述承载主体的外周面之间构成所述第二憋压通道；
    所述承载主体的外周面且位于所述第一环形台阶部下方形成有第二环形台阶部，所述环形主体的内周面且位于所述第一环形凸缘的下方形成有第二环形凸缘，所述第二环形凸缘的至少一部分叠置于所述第二环形台阶部 上，且所述第二环形凸缘的内周面、所述第一环形台阶部的外周面、所述第二环形台阶部的上表面和所述第一环形凸缘的下表面之间构成所述第二缓冲腔。
  13. 根据权利要求12所述的承载装置，其特征在于，所述承载主体包括顶板和叠置于所述顶板的下表面的底板，其中，在所述底板的上表面与所述顶板的下表面之间形成有多个所述环形通道、多个所述第一连接通道、多个所述第二连接通道和所述第一缓冲腔；
    所述顶板中贯通形成有多个所述第一憋压通道，且各所述第一憋压通道的出气端均位于所述第二环形台阶部的上表面；
    所述底板中贯通设置有多个进气孔，多个所述进气孔的一端与多个所述进气口一一对应地连通，多个所述进气孔的另一端用于与所述气源连通。
  14. 一种半导体工艺设备，包括工艺腔室和设置于所述工艺腔室中的承载装置，其特征在于，所述承载装置采用权利要求1-13中任意一项所述的承载装置。
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