WO2025015644A1 - 一种极紫外光刻胶性能检测装置及方法 - Google Patents

一种极紫外光刻胶性能检测装置及方法 Download PDF

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WO2025015644A1
WO2025015644A1 PCT/CN2023/111321 CN2023111321W WO2025015644A1 WO 2025015644 A1 WO2025015644 A1 WO 2025015644A1 CN 2023111321 W CN2023111321 W CN 2023111321W WO 2025015644 A1 WO2025015644 A1 WO 2025015644A1
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photoresist
extreme ultraviolet
euv
ultraviolet photoresist
euv photoresist
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程鑫
庄鑫
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Southern University of Science and Technology
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Definitions

  • the present invention relates to the field of chips, and in particular to an extreme ultraviolet photoresist performance detection device and method.
  • the International Roadmap for Devices and Systems points out that in the next generation of logic chip manufacturing, the line edge roughness should be less than 0.5 nm, and the line width roughness should be less than 1 nm.
  • Photolithography is the core step in chip manufacturing. Due to the power limit of the light source of the EUV lithography machine, more stringent requirements are put forward for the performance of EUV photoresist (line roughness, sensitivity, resolution). EUV photoresist is a multi-component chemical material, composed of photoacid generator, alkaline quencher, protective group and other components.
  • EUV photoresist During the development of EUV photoresist, researchers generally use scanning electron microscopes to detect EUV photoresist after development, and use the data obtained from the detection to iteratively develop EUV photoresist.
  • the detection accuracy of existing scanning electron microscopes cannot reach the sub-nanometer level, and the charge accumulation caused by the interaction between the electron beam and the substrate during detection makes the detection image have a relatively high background noise, which affects the unbiased measurement of EUV photoresist performance.
  • the determination of the line edge is affected by the electron acceleration voltage, nanostructure geometric features, substrate material, etc. It is difficult to accurately identify the line edge of EUV photoresist with sub-nanometer precision, thus affecting the detection results of the photoresist.
  • the technical problem to be solved by the present invention is to provide a detection method and device that can detect extreme ultraviolet photoresist with near-atomic resolution and can filter out charge accumulation and background noise generated during detection.
  • the present invention provides an extreme ultraviolet photoresist detection device, including a substrate, on which at least one thin film is arranged, on which at least one detection area is arranged, and at least a part of the thin film in the detection area is suspended.
  • the hollow cross-sectional area of the substrate below the suspended membrane gradually increases in a direction away from the suspended membrane.
  • the substrate is a silicon wafer.
  • the film is configured as a silicon nitride film.
  • step 2) performing line exposure on the EUV photoresist film layer in step 1) so that the EUV photoresist film layer forms EUV photoresist nanowires;
  • step 2) an EUV lithography machine is used to perform line exposure on the EUV photoresist, or an electron beam and a scanning helium ion beam are used to expose the EUV photoresist on the suspended membrane.
  • the method further comprises step 3): collapsing the EUV photoresist nanowires in step 2).
  • an atomic force microscope probe is used to knock down the EUV photoresist nanowire to cause the EUV photoresist nanowire to collapse, or,
  • the extreme ultraviolet photoresist film layer is infiltrated with a liquid having a high surface tension and dried to collapse the nanowires having a height equal to the thickness of the extreme ultraviolet photoresist.
  • step 4 the EUV photoresist is analyzed and detected by the following steps:
  • the present invention can characterize EUV photoresist at near-atomic resolution.
  • the geometric structure with a suspended membrane as the substrate avoids charge accumulation during characterization, and can measure and characterize the line width and line edge of the EUV photoresist after development with near-atomic resolution and low background noise.
  • the method can collect the electron energy loss spectrum of the EUV photoresist, analyze whether the components of the EUV photoresist are evenly distributed, and measure the roughness of the EUV photoresist line edge with sub-nanometer precision, thereby accurately detecting the performance of the EUV photoresist.
  • the hollow cross-sectional area of the substrate below the suspended membrane gradually increases in the direction away from the suspended membrane.
  • the transmission electron microscope uses an electron beam for scanning, compared with a normal thick substrate, the possible contact volume between the substrate and the electron beam can be reduced to a greater extent, and the charge accumulation caused by the interaction between the electron beam and the substrate can be minimized, so that the detection image has a relatively low background noise, and the detection accuracy is greatly increased to the near-atomic level.
  • this structure in which the hollow cross-sectional area gradually increases in the direction away from the suspended membrane is also more convenient to manufacture, and can be manufactured directly by potassium hydroxide etching.
  • the present invention can characterize EUV photoresist at near-atomic resolution.
  • the line width and line edge can be characterized at near-atomic resolution; when the sum of the thickness of the silicon nitride film plus the thickness of the transfer layer plus the thickness of the EUV photoresist is less than 100 nanometers, the resolution can reach sub-nanometer level.
  • EUV photoresist can also be spin-coated on a suspended film to measure the extreme exposure performance of EUV photoresist, such as the extreme resolution of EUV photoresist and the highest spatial density that can be achieved by EUV photoresist exposure.
  • a transmission electron microscope is used to characterize and detect the EUV photoresist on the suspended membrane without loss and at near-atomic resolution.
  • the high-voltage electron beam can penetrate the suspended membrane, avoiding charge accumulation during characterization, thereby reducing the background noise of the characterization pattern, and extracting and characterizing the line edge and line width of the developed photoresist pattern with sub-nanometer resolution.
  • the transmission electron microscope characterization of the EUV photoresist line edge without deviation and at near-atomic resolution helps to enhance the experimental traceability during the development of EUV photoresist, and helps EUV photoresist R&D personnel to quickly and accurately control the EUV photoresist composition.
  • FIG1 is a schematic structural diagram of a specific embodiment of the present invention.
  • FIG2 is a structure of an EUV photoresist not spin-coated in Embodiment 1 of the present invention.
  • FIG3 is a structure of a spin-coated EUV photoresist and a transfer layer in Embodiment 1 of the present invention.
  • FIG4 is a schematic diagram of the structure of FIG3 after being exposed and developed
  • FIG5 is a structure of a spin-coated EUV photoresist without a transfer layer in Example 1 of the present invention.
  • FIG6 is a schematic diagram of the structure of FIG5 after being exposed and developed
  • FIG7 is a schematic diagram of non-destructive near-atomic resolution characterization of an EUV photoresist on a suspended membrane using a transmission electron microscope;
  • FIG. 8 is a schematic diagram of a data analysis method for extracting, characterizing and detecting line edges of an EUV photoresist in an embodiment
  • FIG9 is a scanning transmission electron microscope photograph of an untreated extreme ultraviolet photoresist
  • FIG10 is a schematic structural diagram of the line edge extracted by the extreme ultraviolet photoresist of FIG9 using the method of FIG8;
  • FIG11 is a schematic diagram showing the relationship between coating thickness, exposure dose and line edge roughness in an embodiment
  • FIG12 is a schematic diagram of collapsed EUV photoresist nanowires under a projection electron microscope in an embodiment
  • FIG. 13 is a schematic diagram of the highest spatial density that can be achieved when a helium ion beam is used to expose an EUV photoresist on a suspended membrane in an embodiment
  • FIG. 14 is a schematic diagram of the experimental structure for exposing and developing the extreme ultraviolet photoresist using a scanning helium ion beam.
  • this embodiment provides an extreme ultraviolet photoresist detection device, including a substrate, on which at least one thin film 3 is disposed, on which at least one detection area is disposed, and at least a portion of the detection area thin film 3 is suspended.
  • 1 is the edge of the EUV photoresist line after development
  • 2 is the components of the EUV photoresist, such as photoacid generator and alkaline quencher
  • 3 is a suspended silicon nitride film.
  • the manufacturing steps of the suspended membrane are shown in Figure 2.
  • a 5nm-90nm silicon nitride film is deposited on both sides of a silicon wafer using a low-pressure chemical vapor deposition method, and a photoresist is spin-coated on the back of the silicon wafer.
  • Selective exposure and development are performed according to the actual area of the suspended membrane, and the silicon nitride film is partially exposed.
  • the silicon nitride film is plasma etched using the photoresist as a mask to expose the silicon wafer, and the exposed silicon wafer is etched with a potassium hydroxide solution.
  • the suspended membrane structure shown in Figure 2 is manufactured.
  • the hollow cross-sectional area of the substrate below the suspended membrane gradually increases in the direction away from the suspended membrane.
  • a silicon wafer is used as a substrate and silicon nitride is used as a thin film.
  • other materials can be used to achieve the same technical effect.
  • Example 2 the sum of the thickness of the silicon nitride film plus the thickness of the extreme ultraviolet photoresist is set to less than 60 nanometers; in this embodiment, the dimensions in Example 1 are limited to achieve a significant increase in detection accuracy.
  • Figure 3 in this embodiment, we introduce a transfer layer 4, and after the extreme ultraviolet photoresist 5 is patterned by a photolithography process, the pattern is transferred to the transfer layer by dry etching, and the patterned transfer layer is used as a mask for the next step of etching.
  • Figure 4 shows the structure of the extreme ultraviolet photoresist after being exposed and developed on the suspended film and the transfer layer. In this embodiment, the transfer layer and the extreme ultraviolet photoresist are spin-coated on the suspended film.
  • a specific method for detecting the performance index of an extreme ultraviolet photoresist is provided. Specifically, it is a method for detecting near-atomic resolution, which involves extracting the edge of an extreme ultraviolet photoresist line. The steps are as follows:
  • step 2) performing line exposure on the EUV photoresist film layer in step 1) so that the EUV photoresist film layer forms EUV photoresist nanowires;
  • the extreme ultraviolet photoresist can be spin-coated on the suspended membrane to measure the extreme ultraviolet photoresist's limit exposure performance, such as: the extreme resolution of the extreme ultraviolet photoresist, the highest spatial density that the extreme ultraviolet photoresist exposure can reach, etc.
  • the total thickness of the silicon nitride film plus the thickness of the extreme ultraviolet photoresist be less than 60 nanometers; if it is necessary to achieve a sub-nanometer resolution, it is recommended that the total thickness of the silicon nitride film plus the thickness of the extreme ultraviolet photoresist be less than 100 nanometers.
  • Figure 6 shows the structure of the extreme ultraviolet photoresist after being exposed and developed on the suspended membrane.
  • the extreme ultraviolet photoresist can be exposed using an extreme ultraviolet lithography machine or other exposure sources, such as electron beam lithography and scanning helium ion beam lithography.
  • the line edges of the developed EUV photoresist are formed by the interaction of multiple factors at different scales, including the type and energy of the exposure source, the monomers that make up the EUV photoresist, photoacid generators, alkaline quenchers and protecting groups, and the type of developer, unbiased transmission electron microscopy characterization of the EUV photoresist line edges with near-atomic resolution will help enhance the experimental traceability during EUV photoresist development and help EUV photoresist researchers and developers to quickly and accurately control the composition of the EUV photoresist.
  • the EUV photoresist spin-coated on the suspended membrane can be exposed to line exposure.
  • the developed EUV photoresist is infiltrated with a liquid with high surface tension and dried to cause the nanowire 1 with a height equal to the thickness of the EUV photoresist to collapse, as shown in FIG12 .
  • the width of the third collapsed rectangular projection from right to left in the figure is the thickness of the EUV photoresist of 55 nanometers.
  • the height after collapse is the width of the nanowire after line exposure.
  • the width of the nanowire after line exposure in the figure is less than 10 nanometers, the too narrow geometric structure at the bottom cannot support the stretching of the liquid surface tension, and the nanowire will collapse; or the nanowire can be knocked down by an atomic force microscope probe. After the EUV photoresist nanowires collapse after line exposure, they are scanned with a transmission electron microscope and the electron energy loss spectrum is collected and analyzed.
  • the local spatial composition of the EUV photoresist is inferred from the electron energy loss spectrum, and the distribution of each component of the EUV photoresist in a plane perpendicular to the two-dimensional direction of the EUV photoresist film is analyzed with sub-nanometer resolution, helping R&D personnel to accurately synthesize and iterate the EUV photoresist.
  • the exposure result of the EUV photoresist on the suspended membrane is consistent with the exposure result of the EUV photoresist on the thick silicon substrate for the following reasons: because the energy of EUV photons is 92 electron volts, when incident on the EUV photoresist, secondary electrons with an energy of 80 electron volts will be generated. The energy of secondary electrons with an energy of 80 electron volts drops to almost zero at a distance of 5 nanometers from the point where they are generated. Therefore, as long as the thickness of the transfer layer on the suspended membrane is greater than 5 nanometers, the exposure result of the EUV photoresist exposed on the suspended membrane using the EUV photolithography machine will be consistent with the exposure result on the thick silicon substrate.
  • the extreme ultraviolet photoresist's limit performance can be tested, such as: the extreme ultraviolet photoresist's limit resolution, the highest spatial density that the extreme ultraviolet photoresist exposure can reach ( Figure 13).
  • the line edge of the photoresist is extracted using the data analysis method shown in FIG8.
  • FIG9 is an unprocessed scanning transmission electron microscope photo
  • FIG10 is a picture of the extracted line edge obtained using the data analysis method shown in FIG8.
  • the line edge of the photoresist with different thicknesses and different exposure doses can be extracted and the line edge roughness can be calculated and counted, as shown in FIG11, which shows that when the designed exposure line width is 200 nanometers, the operation space of the sub-nanometer line edge roughness nanostructure can be manufactured using scanning helium ion exposure.
  • the line edge roughness can be statistically analyzed in the following way: select the patterned photoresist area to be analyzed in the transmission electron microscope photo, binarize the image, turn the image into a black and white image, perform a connected area analysis on the image, and then extract the line edge of the photoresist. After extracting the outline of the line edge, use linear fitting to determine the center line of the line edge, traverse all points according to the point-line distance formula, take the minimum value as the distance of the point, and calculate the standard deviation calculated for each sampling point If the line edge roughness is defined as a ,So The value of is the value of line edge roughness; if the line edge roughness is defined as 3 , then 3 The value of is the value of line edge roughness. Select the patterned photoresist area to be analyzed in the transmission electron microscope photo, perform binary processing on the image, turn the image into a black and white image, perform connected area analysis on the image, and then extract the line edge of the photoresist.
  • the roughness of the photoresist line edge can be calculated according to the above steps; the content of the above embodiment can be used to fully test the performance of the extreme ultraviolet photoresist, because in general, the extreme ultraviolet photoresist has three properties that need to be characterized, which are: 1. resolution; 2. sensitivity; 3. line edge roughness. 1 and 2 can be simply measured by traditional methods, but there is no method that can measure the line edge of the extreme ultraviolet photoresist at near atomic resolution, and then measure the line edge roughness at sub-nanometer precision, so as to detect the performance of the extreme ultraviolet photoresist.
  • the PSD(0) value and the correlation length value can be used to analyze the effect of the change in the concentration of the photoacid generator on the exposure results of the extreme ultraviolet photoresist, the effect of the photoacid diffusion length on the exposure results of the extreme ultraviolet photoresist, the effect of the post-baking temperature on the exposure results of the extreme ultraviolet photoresist, etc.; at the same time, multiple fractal analysis can be used to make a more accurate analysis of the exposure performance of the extreme ultraviolet photoresist, thereby optimizing the traceability of the extreme ultraviolet exposure experiment, and helping R&D personnel to iteratively develop the extreme ultraviolet photoresist, etc.

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Abstract

本发明公开了一种极紫外光刻胶检测装置以及方法，包括衬底，所述衬底上设置有至少一层薄膜，所述薄膜上设置有至少一个检测区，所述检测区薄膜至少存在部分悬空设置。本发明可在近原子级分辨率下表征极紫外光刻胶，以悬空薄膜为衬底的几何结构避免了表征时的电荷积累，可以对显影后的极紫外光刻胶的线宽和线边缘进行低背景噪声的近原子级分辨率的表征。同时，该方法可以对极紫外光刻胶进行电子能量损失能谱的采集，可以分析极紫外光刻胶各组分是否均匀分布，对极紫外光刻胶线边缘粗糙度进行亚纳米精度测量，从而精确检测极紫外光刻胶性能。

Description

一种极紫外光刻胶性能检测装置及方法 技术领域
本发明涉及芯片领域，特别是涉及一种极紫外光刻胶性能检测装置及方法。
 背景技术
国际半导体技术蓝图(International Roadmap for Devices and Systems)指出，在下一代逻辑芯片制程中，线边缘粗糙度(line edge roughness)要小于0.5 nm, 线宽粗糙度(linewidth roughness)要小于1 nm，光刻是芯片制造中的核心步骤，由于极紫外光刻机的光源功率限制，对极紫外光刻胶的性能(线粗糙度，灵敏度，分辨率)提出了更为苛刻的要求。极紫外光刻胶是一种多组分化学材料，由光致产酸剂，碱性淬灭剂，保护基团等成分组成，而这些成分在薄膜形态的极紫外光刻胶体中并不是均匀分布，容易出现相分离和聚集，造成极紫外光刻胶曝光性能下降。在极紫外光刻胶的迭代开发中，需要一种表征技术，能对显影后的光刻胶做亚纳米精度的表征，帮助研发人员对极紫外光刻胶做更为精准的成分调控，加速极紫外光刻胶的迭代开发。
在极紫外光刻胶的开发过程中，研发人员一般使用扫描电子显微镜对显影后的极紫外光刻胶进行检测,并利用检测得到的数据进行极紫外光刻胶的迭代开发。然而，现有的扫描电子显微镜的检测精度无法达到亚纳米级别，且检测时电子束与衬底相互作用引起的电荷积累让检测图像具有比较高的背景噪声，影响了极紫外光刻胶性能的无偏差测量。用扫描电子显微镜测量显影后的极紫外光刻胶的线边缘时，线边缘的判定受电子加速电压、纳米结构几何特征、衬底材料等的影响，很难在亚纳米精度下准确地识别出极紫外光刻胶的线边缘，从而影响光刻胶的检测结果。
综上所述，在极紫外光刻胶的开发和工业化使用中，还缺少一种能以近原子级分辨率检测极紫外光刻胶，且能够滤除检测时的电荷积累产生背景噪声的检测方法以及装置。
 技术问题
有鉴于现有技术的上述缺陷，本发明所要解决的技术问题是提供一种能以近原子级分辨率检测极紫外光刻胶，且能够滤除检测时的电荷积累和所产生背景噪声的检测方法以及装置。
 解决方案
基于上述技术问题，本发明提供了一种极紫外光刻胶检测装置，包括衬底，所述衬底上设置有至少一层薄膜，所述薄膜上设置有至少一个检测区，所述检测区薄膜至少存在部分悬空设置。
较优的，所述衬底距离悬空薄膜下方的镂空横截面积沿远离所述悬空薄膜的方向逐渐增加。
较优的，所述衬底为硅片。
较优的，所述薄膜设置为氮化硅薄膜。
较优的，所述薄膜与所述衬底之间设置有转移层。
较优的，所述薄膜厚度设置为5nm-90nm。
本发明还提供一种极紫外光刻胶检测方法，包括以下步骤：
1)在前所述的极紫外光刻胶检测装置上，旋涂极紫外光刻胶，形成均匀的极紫外光刻胶薄膜层；
2)对所述步骤1)中的极紫外光刻胶薄膜层进行线曝光，使得所述极紫外光刻胶薄膜层形成极紫外光刻胶纳米线；
4)所述极紫外光刻胶纳米线进行分析和检测。
较优的，所述步骤2)中， 采用极紫外光刻机对极紫外光刻胶进行线曝光，或者采用电子束和扫描氦离子束将悬空薄膜上的极紫外光刻胶曝光。
较优的，还包括步骤3)：使所述步骤2)中的极紫外光刻胶纳米线坍塌。
较优的，所述步骤3)中，采用原子力显微镜探针将所述极紫外光刻胶纳米线碰倒使所述极紫外光刻胶纳米线坍塌，或者，
用高表面张力的液体对所述极紫外光刻胶薄膜层进行浸润并干燥，使高度为极紫外光刻胶厚度的纳米线坍塌。
较优的，所述步骤4)中，采用以下步骤对所述极紫外光刻胶进行分析和检测：
41)对极紫外光刻胶的线宽和线边缘进行测量；
42)用透射电子显微镜对所述极紫外光刻胶纳米线进行扫描并进行电子能量损失谱的采集分析，由电子能量损失谱反推出极紫外光刻胶局部空间的组成成分，进而检测所述极紫外光刻胶各组分是否均匀分布。
 有益效果
(1)本发明可在近原子级分辨率下表征极紫外光刻胶，以悬空薄膜为衬底的几何结构避免了表征时的电荷积累，可以对显影后的极紫外光刻胶的线宽和线边缘进行低背景噪声的近原子级分辨率的测量表征。同时，该方法可以对极紫外光刻胶进行电子能量损失能谱的采集，可以分析极紫外光刻胶各组分是否均匀分布，极紫外光刻胶线边缘粗糙度进行亚纳米精度的测量，从而精确检测极紫外光刻胶性能。
(2)本发明中衬底距离悬空薄膜下方的镂空横截面积沿远离所述悬空薄膜的方向逐渐增加。使得透射电子显微镜在采用电子束进行扫描时，与正常的厚衬底比，能够更大范围减少衬底与电子束可能的接触体积，最大化减少电子束与衬底相互作用引起的电荷积累，使得检测图像具有比较低的背景噪声，使得检测精确度大幅度增加达到近原子级，此外，这种镂空横截面积沿远离所述悬空薄膜的方向逐渐增加的结构也更加方便制造，直接采用氢氧化钾蚀刻即可制造完成。
(3)本发明可在近原子级分辨率下表征极紫外光刻胶，本发明氮化硅薄膜厚度加转移层(transfer layer)厚度加极紫外光刻胶厚度总和为60纳米以下时，在表征其线宽和线边缘时能够达到近原子级的分辨率；当氮化硅薄膜厚度加转移层厚度加极紫外光刻胶厚度总和为100纳米以下，可以达到亚纳米级别的分辨率。在不考虑极紫外光刻胶在集成电路加工中的极紫外曝光表现时，还可在悬空薄膜上旋涂极紫外光刻胶，测量极紫外光刻胶的极限曝光性能，如：极紫外光刻胶的极限分辨率，极紫外光刻胶曝光能达到的最高空间密度。
(4)利用本发明的装置以及方法，极紫外光刻胶显影后，利用透射电子显微镜(transmission electron microscope)对悬空薄膜上的极紫外光刻胶做无损的近原子级分辨率的表征和检测。在表征和检测时，高压电子束可透过悬空薄膜，避免了表征时的电荷积累，进而可减少表征图案的背景噪声，对显影后的光刻胶图案做亚纳米级分辨率的线边缘和线宽的提取表征。由于显影后的极紫外光刻胶的线边缘是由多种因素在不同尺度上相互作用而形成的，这些因素包括曝光源的种类以及曝光源的能量、组成极紫外光刻胶的单体，光致产酸剂，碱性淬灭剂和保护基团、显影液的种类等，对极紫外光刻胶线边缘进行无偏差的近原子级分辨率的透射电镜表征有助于加强极紫外光刻胶开发时的实验可追溯性，帮助极紫外光刻胶研发人员对极紫外光刻胶成分进行快速精准调控。
 附图说明
图1是本发明一具体实施方式的结构示意图；
图2是本发明实施例一中未旋涂极紫外光刻胶的结构；
图3是本发明实施例一中旋涂极紫外光刻胶和转移层的结构；
图4是图3被曝光并显影后的结构示意图；
图5是本发明实施例一中不含转移层的旋涂极紫外光刻胶的结构；
图6是图5被曝光并显影后的结构示意图；
图7是透射电子显微镜对悬空薄膜上的极紫外光刻胶做无损的近原子级分辨率的表征示意图；
图8是实施例中对极紫外光刻胶的线边缘进行提取表征检测的数据分析方法示意图；
图9是未处理的扫描透射电子显微镜极紫外光刻胶照片；
图10为图9极紫外光刻胶利用图8方法提取的线边缘的结构示意图；
图11在实施例中的涂层厚度、曝光剂量与线边缘粗糙度之间的关系示意图；
图12是实施例中坍塌的极紫外光刻胶纳米线在投射电子显微镜下示意图；
图13是实施例中当采用氦离子束对悬空薄膜上的极紫外光刻胶曝光时能达到的最高空间密度示意图；
图14是扫描氦离子束对所述极紫外光刻胶进行曝光并显影的实验结构示意图。
 本发明的实施方式
下面将通过具体实施例对本发明进行详细说明。
实施例1
如图1所示，本实施例中提供一种极紫外光刻胶检测装置，包括衬底，所述衬底上设置有至少一层薄膜3，所述薄膜上设置有至少一个检测区，所述检测区薄膜3至少存在部分悬空设置。
其中参见图1，1为显影后的极紫外光刻胶线边缘，2为极紫外光刻胶的组‘成部分，如光致产酸剂，碱性淬灭剂；3为悬空氮化硅薄膜。
悬空薄膜的制造步骤如图2所示，利用低压化学气相沉积法在硅片双面上沉积5nm-90nm的氮化硅薄膜，在硅片的背面旋涂光刻胶，按实际悬空薄膜面积需要进行选择性曝光并显影，局部暴露出氮化硅薄膜，以光刻胶为掩膜板对氮化硅薄膜进行等离子刻蚀，暴露出硅片，用氢氧化钾溶液对暴露出来的硅片进行刻蚀，最后制造出图2所示的悬空薄膜结构。
如图2，所述衬底距离悬空薄膜下方的镂空横截面积沿远离所述悬空薄膜的方向逐渐增加。这样设计，使得透射电子显微镜在采用电子束进行扫描时，与正常的厚硅衬底相比，能够更大程度少衬底与电子束相互作用体积，最大化减少电子束与衬底相互作用引起的电荷积累，减少检测图像的背景噪声，使得检测精确度大幅度增加达到近原子级。
本实施例中，采用硅片作为衬底，采用氮化硅作为薄膜，其余实施例中，可以采用其他材料，实现相同技术效果。
实施例2
在实施例二中，采用氮化硅薄膜厚度加极紫外光刻胶厚度总和设置为60纳米以下；本实施例中，对实施例一中的尺寸进行限定，以实现检测精确度大幅度增加。如图3所示，本实施例中，我们引入转移层4，极紫外光刻胶5通过光刻工艺进行图形化后，再通过干法刻蚀将图案转移到转移层，再将图形化后的转移层作为掩模版进行下一步的刻蚀。附图4显示了极紫外光刻胶在悬空薄膜和转移层上被曝光并显影后的结构。本实施例在悬空薄膜上旋涂转移层和极紫外光刻胶，为达到近原子级的分辨率，氮化硅薄膜厚度加转移层厚度加极紫外光刻胶厚度总和设置为60纳米以下；其他实施例中，为了达到亚纳米级别的分辨率，氮化硅薄膜厚度加转移层厚度加极紫外光刻胶厚度总和为100纳米以下。当然，本领域技术人员可以理解的是，可将图形化后的极紫外光刻胶直接作为掩模版对组成集成电路的薄膜进行刻蚀；附图4显示了极紫外光刻胶在悬空薄膜上的结构，附图5显示极紫外光刻胶在悬空薄膜上被曝光并显影后的结构。但如果通过引入图形化后的转移层对组成集成电路的薄膜进行刻蚀，可以增大光刻工艺中图形转移的可操作性。
实施例3
本实施例中，提供一种具体的极紫外光刻胶性能指标检测方法，具体而言，系具体实现近原子级分辨率的检测方法，涉及到提取极紫外光刻胶线边缘，步骤如下：
1)所述的极紫外光刻胶检测装置上，旋涂极紫外光刻胶，形成均匀的极紫外光刻胶薄膜层；
2)对所述步骤1)中的极紫外光刻胶薄膜层进行线曝光，使得所述极紫外光刻胶薄膜层形成极紫外光刻胶纳米线；
4)采用透射电子显微镜对所述极紫外光刻胶纳米线进行分析和检测。
本检测表征方法中，可以进行多个检测和指标表征，在不考虑极紫外光刻胶在集成电路加工中的极紫外曝光表现时，如图5所示，可在悬空薄膜上旋涂极紫外光刻胶，测量极紫外光刻胶的极限曝光性能，如：极紫外光刻胶的极限分辨率，极紫外光刻胶曝光能达到的最高空间密度等。类似的，若需要达到近原子级的分辨率，建议氮化硅薄膜厚度加极紫外光刻胶厚度总和为60纳米以下；若需要达到亚纳米级别的分辨率，建议氮化硅薄膜厚度加极紫外光刻胶厚度总和为100纳米以下。附图6显示了极紫外光刻胶在悬空薄膜上被曝光并显影后的结构。可采用极紫外光刻机(extreme ultraviolet lithography machine)或其他曝光源，如电子束曝光(electron beam lithography)和扫描氦离子束曝光(scanning helium ion beam lithography)将极紫外光刻胶曝光。
当极紫外光刻胶显影后，利用透射电子显微镜对悬空薄膜上的极紫外光刻胶做近乎无损的近原子级分辨率的表征。如附图7所示，本实施例中，该图片的扫描视场为1.1微米乘以1.1微米，图片像素为4096乘以4096，图像分辨率大致为0.27纳米。在表征时，高压电子束可透过悬空薄膜，避免了表征时的电荷积累，进而可减少表征图案的背景噪声，对显影后的光刻胶图案做无偏差的近原子级分辨率的线边缘和线宽的提取表征。由于显影后的极紫外光刻胶的线边缘是由多种因素在不同尺度上相互作用而形成的，这些因素包括曝光源的种类以及曝光源的能量、组成极紫外光刻胶的单体，光致产酸剂，碱性淬灭剂和保护基团、显影液的种类等，对极紫外光刻胶线边缘进行无偏差的近原子级分辨率的透射电镜表征有助于加强极紫外光刻胶开发时的实验可追溯性，帮助极紫外光刻胶研发人员对极紫外光刻胶成分进行快速精准调控。
实施例4
本实施例中，对于实施例一或者实施例二的结构，以及实施例三，提供一种具体的实施方法，通过实施例三中取得的极紫外光刻胶线边缘，来对极紫外光刻胶进行近原子级别的检测和表征。 如图1，由于极紫外光刻胶为多组分光刻胶，当极紫外光刻胶被匀胶成薄膜状态时，其组分2如光致产酸剂和碱性淬灭剂在薄膜内并不是均匀分布的，容易出现组分的相分离和聚集，造成极紫外光刻胶的曝光性能在亚十纳米尺度表现不一致。利用本发明提到的悬空薄膜结构，可对旋涂在悬空膜上的极紫外光刻胶做线曝光，用高表面张力的液体对显影后的极紫外光刻胶进行浸润并干燥后使高度为极紫外光刻胶厚度的纳米线1坍塌，如图12，图中从右往左数第三根倒塌的长方形投影的宽度即为极紫外光刻胶的55纳米的厚度，倒塌后其高度即为线曝光后的纳米线的宽度，图中当线曝光的纳米线宽度小于10纳米时，其底部过窄的几何结构无法支撑液体表面张力的拉伸，纳米线便会坍塌；或者用原子力显微镜探针将纳米线碰倒。线曝光后的极紫外光刻胶纳米线倒塌后，用透射电子显微镜进行扫描并进行电子能量损失谱的采集分析，由电子能量损失谱反推出极紫外光刻胶局部空间的组成成分，分析出亚纳米分辨率的极紫外光刻胶各组分在垂直于极紫外光刻胶薄膜二维方向的平面的分布图，帮助研发人员对极紫外光刻胶进行精准合成迭代。
本实施例中，若采用极紫外光刻机对极紫外光刻胶进行曝光，悬空薄膜上的极紫外光刻胶的曝光结果和厚硅衬上的极紫外光刻胶的曝光结果一致，原因如下：因为极紫外光子的能量为92电子伏特，当入射到EUV光刻胶上时会产生80电子伏特的二次电子，80电子伏特能量的二次电子在离其产生处5 纳米远，能量几乎降为零，所以只要悬空薄膜上转移层的厚度大于5纳米厚，利用极紫外光刻机曝光在悬空薄膜上的极紫外光刻胶的曝光结果即可和厚硅衬底上的曝光结果一致。
若采用电子束和扫描氦离子束将悬空薄膜上的极紫外光刻胶曝光，高能电子束或者氦离子束与极紫外光刻胶相互作用产生的前散射电子将对极紫外光刻胶的曝光起主要作用，由于衬底为悬空薄膜，电子束或者氦离子束与衬底相互作用时的背散射效应将被大大减弱，曝光时的空间能量对比度将达到最大。通过此曝光方式，可以测试极紫外光刻胶的极限性能，如：极紫外光刻胶的极限分辨率，极紫外光刻胶曝光能达到的最高空间密度(附图13)。特别地，当采用扫描氦离子束对极紫外光刻胶进行曝光时，由于氦离子的质量是电子的七千多倍，当氦离子与极紫外光刻胶相互作用时，其运动轨迹会比电子束的更为准直。在特定的操作空间下，氦离子与极紫外光刻胶相互作用产生的显影阈值对应的二次电子空间能量分布图的横截面的线边缘可达到0.2纳米粗糙度(附图14)，利用这一特性，我们可以利用扫描氦离子束曝光在悬空薄膜上的极紫外光刻胶，利用透射电子显微镜对显影后的极紫外光刻胶进行表征，分析其可达到的最小线边缘粗糙度，利用最小线边缘粗糙度来表征极紫外光刻胶的性能。
实施例5
本实施例中，在实施例一、二的基础上，光刻胶进行近原子级分辨率的表征后，利用附图8所示的数据分析方法对光刻胶的线边缘进行提取。附图9为未处理的扫描透射电子显微镜照片，附图10为利用附图8所示的数据分析方法得到的提取过线边缘的图片。基于该近原子级分辨率的表征方法，可以对不同胶厚、受到不同曝光剂量的光刻胶线边缘进行提取并进行线边缘粗糙度的计算统计，如图11，显示了在设计曝光线宽为200纳米时，利用扫描氦离子曝光能制造出亚纳米线边缘粗糙度纳米结构的操作空间。
如图8，可以采用以下方式对线边缘粗糙度进行统计：在透射电子显微镜照片中选取需要分析的图形化后的光刻胶区域，将图片进行二值化处理，图片变为黑白图片，对图片进行联通区域分析，进而提取出光刻胶的线边缘。提取出线边缘的轮廓后，利用线性拟合确定好线边缘的中心线，根据点-线之间距离公式，遍历所有点，取最小值定义为该点的距离，计算各采样点算出来的标准差 。如果线边缘粗糙度定义为一个 ，那么 的值就是线边缘粗糙度的值；如果线边缘粗糙度定义为3  ，那么3  的值就是线边缘粗糙度的值。在透射电子显微镜照片中选取需要分析的图形化后的光刻胶区域，将图片进行二值化处理，图片变为黑白图片，对图片进行联通区域分析，进而提取出光刻胶的线边缘。
此外，如附图8提取出近原子级分辨率的线边缘的图案后，可以按照上面步骤计算出光刻胶线边缘粗糙度；采用以上实施例的内容，可以完整的测试到极紫外光刻胶的性能，因为一般情况下，极紫外光刻胶有三个性能需要进行表征，这三个性能是：一、分辨率；二、灵敏度；三、线边缘粗糙度。一和二可通过传统方法简单测得，而还没有一种方法能在近原子级分辨率下测量极紫外光刻胶的线边缘，进而在亚纳米级精度下测量线边缘粗糙度，从而检测极紫外光刻胶的性能。
当然，除了以上实施例之外，在其他实施例中，我们还可以利用本方法测得的线边缘进行其他的研究，如可以对线边缘进行功率谱密度分析，提取出线边缘在功率谱密度分析中的初始值PSD(0)和相关长度。利用PSD(0)值和相关长度值可以分析光致产酸剂浓度变化对极紫外光刻胶的曝光结果的影响、光酸扩散长度对极紫外光刻胶曝光结果的影响、后烘温度对极紫外光刻胶曝光结果的影响等；同时还可以利用多重分形分析对极紫外光刻胶的曝光表现做出更精准的分析，进而优化极紫外曝实验的可溯源性，帮助研发人员对极紫外光刻胶进行迭代开发等。
 工业实用性
以上所述仅为本发明的较佳实施例，凡依本发明权利要求范围所做的均等变化与修饰，皆应属本发明权利要求的涵盖范围。

Claims (10)

  1. 一种极紫外光刻胶检测装置，其特征在于，包括衬底，所述衬底上设置有至少一层薄膜，所述薄膜上设置有至少一个检测区，所述检测区薄膜至少存在部分悬空设置。
  2. 如权利要求1所述的极紫外光刻胶检测装置，其特征在于，所述衬底距离悬空薄膜下方的镂空横截面积沿远离所述悬空薄膜的方向逐渐增加。
  3. 如权利要求1所述的极紫外光刻胶检测装置，其特征在于，所述薄膜设置为氮化硅薄膜。
  4. 如权利要求1所述的极紫外光刻胶检测装置，其特征在于，所述薄膜与所述衬底之间设置有转移层。
  5. 如权利要求1至4任一项所述的极紫外光刻胶检测装置，其特征在于，所述薄膜厚度设置为5nm-90nm。
  6. 一种极紫外光刻胶检测方法，其特征在于，包括以下步骤：
    1)在如权利要求1至6任一项所述的极紫外光刻胶检测装置上，旋涂极紫外光刻胶，形成均匀的极紫外光刻胶薄膜层；
    2)对所述步骤1)中的极紫外光刻胶薄膜层进行线曝光，使得所述极紫外光刻胶薄膜层形成极紫外光刻胶纳米线；
    4)对所述极紫外光刻胶纳米线分析和检测。
  7. 如权利要求6所述的极紫外光刻胶检测方法，其特征在于，所述步骤2)中， 采用极紫外光刻机对极紫外光刻胶进行线曝光，或者采用电子束或者扫描氦离子束将悬空薄膜上的极紫外光刻胶曝光。
  8. 如权利要6所述的极紫外光刻胶检测方法，其特征在于，
    还包括步骤3)：使所述步骤2)中的极紫外光刻胶纳米线坍塌。
  9. 如权利要8所述的极紫外光刻胶检测方法，其特征在于，
    所述步骤3)中，采用原子力显微镜探针将所述极紫外光刻胶纳米线碰倒使所述极紫外光刻胶纳米线坍塌，或者，用高表面张力的液体对所述极紫外光刻胶薄膜层进行浸润并干燥，使高度为极紫外光刻胶厚度的纳米线坍塌。
  10. 如权利要9所述的极紫外光刻胶检测方法，其特征在于，所述步骤4)中，采用以下步骤对所述极紫外光刻胶进行分析和检测：
    41)对极紫外光刻胶的线宽和线边缘进行测量；
    42)用透射电子显微镜对所述极紫外光刻胶纳米线进行扫描并进行电子能量损失谱的采集分析，由电子能量损失谱反推出极紫外光刻胶局部空间的组成成分，进而检测所述极紫外光刻胶各组分是否均匀分布。
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