WO2025001640A1 - 一种显示面板及其制备方法、显示装置 - Google Patents

一种显示面板及其制备方法、显示装置 Download PDF

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Publication number
WO2025001640A1
WO2025001640A1 PCT/CN2024/094630 CN2024094630W WO2025001640A1 WO 2025001640 A1 WO2025001640 A1 WO 2025001640A1 CN 2024094630 W CN2024094630 W CN 2024094630W WO 2025001640 A1 WO2025001640 A1 WO 2025001640A1
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Prior art keywords
light absorption
pixel
absorption structure
sub
light
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PCT/CN2024/094630
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English (en)
French (fr)
Inventor
张文强
晏荣建
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display panel and a method for manufacturing the same, and a display device.
  • AMOLED Active matrix organic electroluminescent device
  • OLED display devices are self-luminous and have the advantages of low driving voltage, high luminous efficiency, short response time, high clarity and contrast, nearly 180° viewing angle, wide operating temperature range and transparent preparation, which can realize flexible display and large-area full-color display.
  • AMOLED is composed of three primary colors RGB to form array sub-pixels, and different chromaticities are displayed by controlling the luminous brightness of RGB sub-pixels.
  • the terminal device installs an ambient light sensor on the back of the AMOLED panel to sense the brightness of the user's usage scene, so as to automatically adjust the display brightness of the terminal device, protect the user's eyesight and reduce its own power consumption. In the related technology, there is a problem of low sensing accuracy.
  • the purpose of the present disclosure is to overcome the deficiencies of the above-mentioned prior art and to provide a display panel and a method for manufacturing the same, and a display device.
  • a display panel comprising: a driving backplane, a plurality of sub-pixels emitting light of different colors are formed on one side of the driving backplane; a pixel defining layer, Located on one side of the driving backplane, the pixel definition layer has a pixel opening, and the light-emitting functional layer of the sub-pixel is formed in the pixel opening; a plurality of light absorption structures are arranged corresponding to at least part of the sub-pixels, the light absorption structures are located in the pixel definition layer and are circumferentially arranged around the corresponding pixel openings, the minimum light absorption wavelength of the light absorption structure is less than or equal to the minimum light emission wavelength of the sub-pixel corresponding thereto, and the maximum light absorption wavelength of the light absorption structure is greater than or equal to the maximum light emission wavelength of the sub-pixel corresponding thereto.
  • the display panel has a photosensitive area, and the photosensitive area has a photoelectric sensor; wherein the light absorption structure is arranged corresponding to at least part of the sub-pixels of the photosensitive area.
  • the photosensitive area includes an R sub-pixel, a G sub-pixel and a B sub-pixel
  • the light absorption structure includes a first light absorption structure
  • the first light absorption structure is arranged corresponding to at least part of the G sub-pixels, the minimum light absorption wavelength of the first light absorption structure is less than or equal to the minimum light emission wavelength of the G sub-pixels, and the maximum light absorption wavelength of the first light absorption structure is greater than or equal to the maximum light emission wavelength of the G sub-pixels.
  • the minimum absorption wavelength of the first light absorption structure is also less than or equal to the minimum emission wavelength of the B sub-pixel, and the maximum absorption wavelength of the first light absorption structure is also greater than or equal to the maximum emission wavelength of the B sub-pixel.
  • the photosensitive area includes R sub-pixels, G sub-pixels and B sub-pixels
  • the light absorption structure includes two light absorption structures among a first light absorption structure, a second light absorption structure and a third light absorption structure; wherein the first light absorption structure is arranged corresponding to at least part of the G sub-pixels, the second light absorption structure is arranged corresponding to at least part of the R sub-pixels, and the third light absorption structure is arranged corresponding to at least part of the B sub-pixels.
  • the photosensitive area includes R sub-pixels, G sub-pixels and B sub-pixels
  • the light absorption structure includes a first light absorption structure, a second light absorption structure and a third light absorption structure; wherein the first light absorption structure is arranged corresponding to at least part of the G sub-pixels, the second light absorption structure is arranged corresponding to at least part of the R sub-pixels, and the third light absorption structure is arranged corresponding to at least part of the B sub-pixels.
  • the first light absorption structure, the second light absorption structure and the third light absorption structure have the same minimum light absorption wavelength and the same maximum light absorption wavelength, and the minimum light absorption wavelength of any light absorption structure is greater than or equal to the minimum light emission wavelength of the B sub-pixel.
  • the maximum absorption wavelength is also greater than or equal to the maximum light emission wavelength of the B sub-pixel.
  • the material of the light absorption structure includes a compound represented by the following structural formula (1):
  • the material of the light absorption structure is a black material.
  • the display panel also includes: a first electrode layer, including a plurality of first electrodes distributed in an array, the pixel defining layer having the pixel opening at the first electrode, and the light-emitting functional layer is formed on a side of the first electrode facing away from the driving backplane; wherein the orthographic projection of the light absorption structure on the driving backplane at least partially overlaps with the orthographic projection of the first electrode on the driving backplane.
  • the display panel also includes: a first electrode layer, including a plurality of first electrodes distributed in an array, the pixel defining layer having the pixel opening at the first electrode, and the light-emitting functional layer is formed on a side of the first electrode facing away from the driving backplane; wherein the orthographic projection of the light absorption structure on the driving backplane does not overlap with the orthographic projection of the first electrode on the driving backplane.
  • the display panel also includes: a first electrode layer, including a plurality of first electrodes distributed in an array, the pixel defining layer having the pixel opening at the first electrode, and the light-emitting functional layer is formed on a side of the first electrode away from the driving backplane; wherein the light absorption structure contacts the side wall of the corresponding first electrode.
  • the display panel also includes: a first electrode layer, including a plurality of first electrodes distributed in an array, the pixel defining layer having the pixel opening at the first electrode, and the light-emitting functional layer being formed on a side of the first electrode facing away from the driving backplane; wherein the minimum width of the light absorption structure on the orthographic projection of the driving backplane is a first width, and there is a gap between the light absorption structure and the corresponding first electrode, and the gap width is less than or equal to the first width.
  • a ratio of the gap width to the first width is greater than 0 and less than or equal to 1.
  • the light absorption structure penetrates the pixel defining layer in a thickness direction of the driving backplane.
  • the light absorption structure has a bottom surface and a top surface arranged opposite to each other in the thickness direction of the driving backplane, the bottom surface is located on the side of the top surface close to the driving backplane, and the pixel defining layer covers the top surface of the light absorption structure.
  • the display panel also includes: a second electrode layer, located on the side of the pixel defining layer away from the driving backplane, and at least one side of at least a portion of the pixel defining layer contacts the second electrode layer and the other side contacts the driving backplane; wherein, in the thickness direction of the driving backplane, the light absorption structure has a first thickness between the top and bottom surfaces, the pixel defining layer has a second thickness at a position contacting the second electrode layer, and the ratio of the first thickness to the second thickness is greater than or equal to 0.6.
  • the light absorbing structure includes a first structural layer and a second structural layer parallel to the driving backplane, and the first structural layer is located at any position of the second structural layer on a side away from the driving backplane; wherein the orthographic projection of the first structural layer on the driving backplane is located within the orthographic projection of the second structure on the driving backplane, or the orthographic projection of the first structural layer on the driving backplane overlaps with the orthographic projection of the second structure on the driving backplane.
  • the light absorption structure includes a first structural layer and a second structural layer parallel to the driving backplane, and the first structural layer is located at any position of the second structural layer on a side away from the driving backplane; wherein the orthographic projection of the second structural layer on the driving backplane is located within the orthographic projection of the first structural layer on the driving backplane.
  • the orthographic projection of the light absorption structure on the driving back plate is a circular ring or a regular polygonal ring.
  • the light absorption structure has a minimum width of a first width in an orthographic projection on the driving backplane, and the first width is greater than or equal to 0.5 ⁇ m and less than or equal to 2 ⁇ m.
  • a slope angle formed by a side wall and a bottom surface of the light absorption structure is greater than or equal to 20° and less than or equal to 90°.
  • a slope angle formed by a side wall and a bottom surface of the light absorption structure is greater than 90° and less than or equal to 160°.
  • the sub-pixel includes at least a first light-emitting unit and a second light-emitting unit stacked on one side of the driving backplane, and the first light-emitting unit is connected in series through a charge generating layer; the sub-pixel has a light-emitting phase and a non-light-emitting phase, and the photoelectric sensor located in the photosensitive area has a sensing phase and a non-sensing phase, wherein the sensing phase of the photoelectric sensor does not overlap with the light-emitting phase of the sub-pixel.
  • a method for preparing a display panel is also provided, which is used to prepare the display panel described in any embodiment of the present disclosure, and the method includes: providing a driving backplane; forming a plurality of light absorption structures in at least a partial area on one side of the driving backplane, wherein the minimum light absorption wavelength of the light absorption structure is less than or equal to the minimum light emission wavelength of the sub-pixel corresponding thereto, and the maximum light absorption wavelength of the light absorption structure is greater than or equal to the maximum light emission wavelength of the sub-pixel corresponding thereto; forming a pixel defining layer on one side of the driving backplane; forming pixel openings in the pixel defining layer using a composition process, wherein the light absorption structures are circumferentially arranged around the corresponding pixel openings; and forming a light-emitting functional layer in the pixel openings using a vapor deposition process.
  • a display device comprising the display panel described in any embodiment of the present disclosure.
  • the display panel provided by the present disclosure has a light absorption structure disposed on the pixel defining layer, the minimum light absorption wavelength of the light absorption structure is less than or equal to the minimum light emission wavelength of the corresponding sub-pixel, and the maximum light absorption wavelength of the light absorption structure is greater than or equal to the maximum light emission wavelength of the corresponding sub-pixel, so that the light absorption structure has an absorption effect on the light emitted by the sub-pixel corresponding thereto.
  • the light absorption structure is disposed circumferentially around the pixel opening, so that the light absorption structure can absorb the lateral light leakage generated by the corresponding sub-pixel, and prevent the lateral light leakage from being transmitted to the photoelectric sensor for detecting ambient light in the display panel, thereby reducing the non-ambient light interference on the photoelectric sensor, and improving the sensing accuracy of the photoelectric sensor for ambient light.
  • FIG1 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure.
  • FIG2 is a partial enlarged view of the photosensitive area in FIG1 ;
  • FIG3 is a cross-sectional view along the dotted line AA in FIG2 ;
  • FIG4 is a schematic diagram of a lateral light leakage of a sub-pixel being sensed by a photoelectric sensor in the related art
  • FIG5 is a schematic diagram of a stack of sub-pixels according to an embodiment of the present disclosure.
  • FIG6 is a circuit diagram of a pixel driving circuit according to an embodiment of the present disclosure.
  • FIG7 is a timing diagram of each node in a driving method of the pixel driving circuit in FIG6 ;
  • FIG8 is a brightness decay curve diagram of a sub-pixel in an EM-off stage according to an embodiment of the present disclosure
  • 9-20 are schematic diagrams showing the distribution of light-absorbing structures in a photosensitive area according to an embodiment of the present disclosure.
  • FIG21 is an absorption spectrum curve of a compound according to an embodiment of the present disclosure.
  • FIG22 is a cross-sectional view of a light absorption structure and a sub-pixel according to an embodiment of the present disclosure
  • FIG23 is a cross-sectional view of a light absorption structure and a sub-pixel according to another embodiment of the present disclosure.
  • FIG24 is a cross-sectional view of a light absorption structure and a sub-pixel according to yet another embodiment of the present disclosure.
  • FIG25 is a top view of a light absorption structure and a sub-pixel according to another embodiment of the present disclosure.
  • FIG26 is a cross-sectional view along the dotted line AA in FIG25;
  • 27-29 are partial enlarged views of a light absorbing structure in FIG. 25 ;
  • FIG30 is a cross-sectional view of a light absorption structure and a sub-pixel according to an embodiment of the present disclosure
  • FIG31 is a partial enlarged view of the light absorption structure in FIG30;
  • FIG32 is a cross-sectional view of a light absorption structure and a sub-pixel according to another embodiment of the present disclosure.
  • FIG33 is a partial enlarged view of the light absorption structure in FIG32;
  • FIG34 is a cross-sectional view of a light absorption structure and a sub-pixel according to yet another embodiment of the present disclosure.
  • FIG35 is a partial enlarged view of the light absorption structure in FIG34;
  • 36 to 39 are flow charts of a method for preparing a display panel according to an embodiment of the present disclosure.
  • terminal devices usually install ambient light sensing photoelectric sensors on the back of the AMOLED panel to identify the brightness of the user's usage scene, so as to dynamically adjust the display brightness of the terminal device, protect the user's eyesight while also reducing its own power consumption.
  • the light released by the OLED during the discharge process of the device after power failure is refracted and reflected by the anode, cathode, and organic and inorganic film layers, passes through the blank area of the driving backplane wiring, and is received by the ambient light sensing photoelectric sensor under the backplane, thereby affecting the sensitivity of the ambient light sensing photoelectric sensor.
  • Figure 1 is a structural schematic diagram of a display panel according to an embodiment of the present disclosure
  • Figure 2 is a local enlarged view of the photosensitive area in Figure 1
  • Figure 3 is a cross-sectional view along the dotted line AA in Figure 2.
  • the display panel may include a driving backplane 110, a pixel defining layer PDL and a plurality of light absorption structures 120, wherein a plurality of sub-pixels emitting light of different colors are formed on one side of the driving backplane 110, the pixel defining layer PDL is located on one side of the driving backplane 110, the pixel defining layer PDL has a pixel opening, and a light-emitting functional layer of the sub-pixel is formed in the pixel opening; the light absorption structure 120 is arranged corresponding to at least part of the sub-pixels, the light absorption structure 120 is located in the pixel defining layer PDL and is circumferentially arranged around the corresponding pixel opening, the minimum light absorption wavelength of the light
  • the display panel provided by the present disclosure has a light absorption structure 120 disposed on the pixel definition layer PDL.
  • the minimum light absorption wavelength of the light absorption structure 120 is less than or equal to the minimum light emission wavelength of the corresponding sub-pixel, and the maximum light absorption wavelength of the light absorption structure 120 is greater than or equal to the maximum light emission wavelength of the corresponding sub-pixel, so that the light absorption structure 120 has an absorption effect on the light emitted by the corresponding sub-pixel.
  • the light absorption structure 120 is disposed circumferentially around the pixel opening, so that the light absorption structure 120 can absorb the lateral light leakage generated by the corresponding sub-pixel, and prevent the lateral light leakage from being transmitted to the photoelectric sensor 101 in the display panel that detects ambient light. This reduces the interference of non-ambient light on the photoelectric sensor 101 and improves the sensing accuracy of the photoelectric sensor 101 for ambient light.
  • the light absorption structure 120 of the present disclosure is arranged corresponding to at least some of the sub-pixels, which can be understood as at least some of the sub-pixels in the display panel are provided with the light absorption structure 120, for example, the light absorption structure 120 is arranged one-to-one with some of the sub-pixels.
  • the display panel may have a photosensitive area 200, and the photosensitive area 200 may be located in the display area.
  • a photoelectric sensor 101 for identifying the degree of ambient light and darkness may be arranged in the photosensitive area 200, and the display brightness of the display device may be automatically adjusted based on the sensing signal of the photoelectric sensor 101.
  • the multiple light absorption structures 120 of the present disclosure are arranged corresponding to at least some of the sub-pixels, and specifically, multiple light absorption structures 120 may be arranged corresponding to at least some of the sub-pixels of the photosensitive area 200.
  • the photosensitive area 200 of the present disclosure is located in the display area, and the photosensitive area 200 may have all the characteristics of other areas of the display area except that the photoelectric sensor 101 and the light absorption structure 120 are arranged, which will not be repeated here.
  • the light absorption structure 120 is arranged around the corresponding pixel opening, that is, the light absorption structure 120 encloses an area around the pixel opening, and the corresponding pixel opening is located in the area.
  • the orthographic projection of the light absorption structure 120 on the driving backplane 110 is a ring, and the orthographic projection of the pixel opening on the driving backplane 110 is located within the orthographic projection of the ring.
  • the light absorption structure 120 is arranged in the circumferential direction of the corresponding pixel opening, so that the lateral light leakage generated by the sub-pixel in the pixel opening (including the light directly generated by the sub-pixel and the light reflected by other film layers) will be transmitted to the light absorption structure 120, that is, the light absorption structure 120 is equivalent to being located on the propagation path of the lateral light leakage of the sub-pixel.
  • FIG4 is a schematic diagram of the lateral light leakage of a sub-pixel being sensed by a photoelectric sensor in the related art.
  • the light absorption structure 120 of the present disclosure includes a light absorption material to absorb light of a specific wavelength through the light absorption material.
  • the minimum absorption wavelength and the maximum absorption wavelength are the limit absorption wavelengths of the light absorption structure 120, and the minimum absorption wavelength is the minimum wavelength of light that the light absorption structure 120 can absorb, that is, light less than the minimum absorption wavelength cannot be absorbed by the light absorption structure 120.
  • the maximum absorption wavelength is the maximum wavelength that the light absorption structure 120 can absorb, that is, light greater than the maximum absorption wavelength cannot be absorbed by the light absorption structure 120. In other words, light with a wavelength between the minimum absorption wavelength and the maximum absorption wavelength will be absorbed by the light absorption structure 120.
  • the minimum absorption wavelength of the light absorption structure 120 is greater than or equal to the minimum emission wavelength of the corresponding sub-pixel
  • the maximum absorption wavelength of the light absorption structure 120 is greater than or equal to the maximum emission wavelength of the corresponding sub-pixel, that is, the light absorption structure 120 can absorb the full-band light emitted by the corresponding sub-pixel.
  • the display panel block disclosed in the present invention can be an OLED display panel, which can have an organic electroluminescent layer.
  • the minimum emission wavelength and the maximum emission wavelength of the sub-pixel can be obtained by measuring the luminous intensity of light of different wavelengths emitted by the organic electroluminescent layer material forming the sub-pixel, wherein the minimum emission wavelength is the minimum wavelength of the band in which the light emitted by the organic electroluminescent layer material is located, and the maximum emission wavelength is the maximum wavelength of the band in which the light emitted by the organic electroluminescent layer material is located.
  • the display panel disclosed in the present invention may include a pixel definition layer PDL, a first electrode layer, a light-emitting functional layer, and a second electrode layer in the display area.
  • the pixel definition layer PDL and the first electrode layer are arranged on the same surface of the driving backplane 110, and the pixel definition layer PDL exposes each first electrode ANO.
  • the pixel definition layer PDL may be provided with a plurality of pixel openings that expose each first electrode ANO.
  • the orthographic projection of any pixel opening on the substrate substrate may be located within the first electrode ANO exposed therefrom, that is, the pixel opening is not larger than the first electrode ANO exposed therefrom.
  • the boundary of the pixel opening is located on the inner side of the boundary of the first electrode ANO exposed therefrom, that is, the area of the pixel opening is smaller than the area of the first electrode ANO exposed therefrom.
  • the shape of the pixel opening may be a polygon such as a rectangle, a pentagon, or a hexagon, but it is not necessarily a regular polygon.
  • the shape of the pixel opening may also be other shapes such as an ellipse, which is not specifically limited here.
  • the first electrode layer may be an anode layer
  • the second electrode layer may be a cathode layer.
  • the present disclosure only uses the example that the first electrode layer is an anode layer and the second electrode layer is a cathode layer for illustrative description. Of course, in other embodiments, the first electrode layer may also be a cathode layer and the second electrode layer may also be an anode layer.
  • the light-emitting functional layer covers the pixel definition layer PDL and the first electrode ANO, and the area where the light-emitting functional layer and the first electrode ANO overlap is used to form a sub-pixel.
  • the light-emitting functional layer is located in the pixel opening, and the light absorption structure is arranged circumferentially around the pixel opening, which is equivalent to the light absorption structure being arranged circumferentially around the sub-pixel.
  • the sub-pixel of the present disclosure may be a stacked OLED device (Tandem OLED), that is, it includes multiple light-emitting devices OLED connected in series. Compared with a single-layer OLED device (Single OLED), a Tandem OLED device has the characteristics of high efficiency and long life.
  • FIG5 is a schematic diagram of a stacked sub-pixel according to an embodiment of the present disclosure.
  • each sub-pixel includes a first electrode ANO, a second electrode CAT, and multiple sub-light-emitting layers between the first electrode ANO and the second electrode CAT (the figure only takes the sub-pixel including the first sub-light-emitting layer 10 and the second sub-light-emitting layer 20 as an example for illustrative explanation), and each light-emitting device of the same sub-pixel may share the same first electrode ANO and the same second electrode CAT, that is, the same sub-pixel may have only one first electrode ANO and one second electrode CAT.
  • the light-emitting functional layer may include a plurality of sub-light-emitting layers connected in series in a direction away from the driving backplane 110, and at least one sub-light-emitting layer is connected in series with an adjacent sub-light-emitting layer through the charge generation layer CGL.
  • each sub-light-emitting layer can emit light, and different sub-light-emitting layers can be used to emit light of different colors.
  • Any sub-light-emitting layer may include a hole injection layer HIL, a hole transport layer HTL, an organic electroluminescent layer EML, an electron transport layer ETL and an electron injection layer EIL distributed along the thickness direction away from the driving backplane 110.
  • the specific light-emitting principle is not described in detail here.
  • the number of hole injection layers HIL, hole transport layers HTL, electron transport layers ETL and electron injection layers EIL is not specifically limited here, and adjacent sub-light-emitting layers may share one or more of the hole injection layer HIL, hole transport layer HTL, electron transport layer ETL and electron injection layer EIL.
  • a charge generation layer CGL may be provided between at least two adjacent sub-light-emitting layers, so that the two sub-light-emitting layers are connected in series to form a Tandem OLED device.
  • the display panel may further include a color filter layer (not shown in the figure), which may be disposed on the side of the second electrode CAT away from the driving backplane 110, and includes a plurality of filter portions, each first electrode ANO and each filter portion are disposed opposite to each other in a direction perpendicular to the driving backplane 110, that is, the orthographic projection of a filter portion on the driving backplane 110 at least partially overlaps with a first electrode ANO.
  • Each filter portion includes at least three color filter portions, for example, a filter portion that transmits red light, A filter that transmits green light and a filter that transmits blue light.
  • a filter and its corresponding light-emitting unit can constitute a sub-pixel, and the color of light emitted by any sub-pixel is the color of the light transmitted by its filter.
  • Multiple sub-pixels can constitute a pixel, and the light-emitting colors of each sub-pixel of the same pixel are different.
  • the color filter layer can also include a shading part that separates the filter part, the shading part is opaque, and blocks the area between the two light-emitting units.
  • the above-mentioned light-emitting functional layer structure is only for illustrative purposes and does not constitute a limitation on its film layer. It may include only two sub-light-emitting layers, or more, or only one sub-light-emitting layer, as long as it can cooperate with the color filter layer to achieve color display.
  • the driving backplane may include a plurality of transistors forming a pixel driving circuit, and the pixel driving circuit may be, for example, 7T1C, 8T1C, etc.
  • FIG6 is a circuit diagram of a pixel driving circuit according to an embodiment of the present disclosure.
  • the pixel driving circuit may include: a first transistor T1, a second transistor T2, a driving transistor T3, a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, a seventh transistor T7, and a capacitor C.
  • the first electrode of the first transistor T1 is connected to the node N
  • the second electrode is connected to the first initial signal terminal Vinit1, and the gate is connected to the reset signal terminal Re1
  • the first electrode of the second transistor T2 is connected to the first electrode of the driving transistor T3, the second electrode is connected to the node N
  • the gate is connected to the gate driving signal terminal Gate
  • the gate of the driving transistor T3 is connected to the node N
  • the first electrode of the fourth transistor T4 is connected to the data signal terminal Da
  • the second electrode is connected to the second electrode of the driving transistor T3, and the gate is connected to the gate driving signal terminal Gate
  • the first electrode of the fifth transistor T5 is connected to the second electrode of the driving transistor T3, the second electrode is connected to the first power supply terminal VDD
  • the gate is connected to the enable signal terminal EM
  • the first electrode of the sixth transistor T6 is connected to the first electrode of the driving transistor T3, and the gate is connected to the enable signal terminal EM
  • the first electrode of the seventh transistor T7 is connected to the
  • the capacitor C is connected between the gate of the driving transistor T3 and the first power supply terminal VDD.
  • the pixel driving circuit can be connected to a light-emitting unit OLED (the light-emitting unit OLED can be, for example, the above-mentioned Tandem OLED) to drive the light-emitting unit OLED to emit light.
  • the light-emitting unit OLED can be connected between the second electrode of the sixth transistor T6 and the second power supply terminal VSS.
  • the transistors T1 to T7 can all be P-type transistors or N-type transistors, or some can be P-type transistors and some can be N-type transistors.
  • FIG7 is a timing diagram of each node in a driving method of the pixel driving circuit in FIG6.
  • Gate represents the timing of the gate driving signal terminal Gate
  • Re1 represents the timing of the reset signal terminal Re1
  • Re2 represents the timing of the reset signal terminal Re2
  • EM represents the timing of the enable signal terminal EM
  • Da represents the timing of the data signal terminal Da.
  • the driving method of the pixel driving circuit may include a reset stage t1, a compensation stage t2, and a light-emitting stage t3.
  • the reset signal terminal Re1 outputs a low-level signal
  • the first transistor T1 is turned on
  • the first initial signal terminal Vinit1 inputs an initial signal to the node N.
  • the reset signal terminal Re2 and the gate driving signal terminal Gate output low-level signals, the fourth transistor T4, the second transistor T2, and the seventh transistor T7 are turned on, and at the same time, the data signal terminal Da outputs a driving signal to write a voltage Vdata+Vth to the node N, wherein Vdata is the voltage of the driving signal, and Vth is the threshold voltage of the driving transistor T3, and the second initial signal terminal Vinit2 inputs an initial signal to the second electrode of the sixth transistor T6.
  • Light-emitting stage t3 the enable signal terminal EM outputs a low-level signal, the sixth transistor T6 and the fifth transistor T5 are turned on, and the light-emitting unit OLED emits light under the voltage Vdata+Vth stored in the capacitor C.
  • ⁇ the carrier mobility
  • Cox the gate capacitance per unit area
  • W the width of the driving transistor channel
  • L the length of the driving transistor channel
  • Vgs the gate-source voltage difference of the driving transistor
  • Vth is the threshold voltage of the driving transistor.
  • the light absorption structure 120 may include a first light absorption structure 121, a second light absorption structure 122 and a third light absorption structure 123, wherein the first light absorption structure 121 is a light absorption structure arranged circumferentially around the G sub-pixel, the second light absorption structure 122 is a light absorption structure arranged circumferentially around the R sub-pixel, and the third light absorption structure 123 is a light absorption structure arranged circumferentially around the B sub-pixel.
  • the display panel may include only the first light absorption structure 121, that is, the display panel includes only the light absorption structure arranged around the G sub-pixel, and the first light absorption structure 121 may be arranged in a one-to-one correspondence with the G sub-pixel.
  • FIG. 10 is a cross-sectional view along the dotted line AA in FIG. 9
  • the display panel may include only the third light absorption structure 123, that is, the display panel includes only the light absorption structure arranged around the B sub-pixel, and the third light absorption structure 123 may be arranged in a one-to-one correspondence with the B sub-pixel.
  • FIGS. 9 is a cross-sectional view along the dotted line AA in FIG. 9
  • the display panel may include only the third light absorption structure 123, that is, the display panel includes only the light absorption structure arranged around the B sub-pixel, and the third light absorption structure 123 may be arranged in a one-to-one correspondence with the B sub-pixel.
  • FIG. 12 is a cross-sectional view along the dotted line AA in FIG. 11
  • the display panel may include only the second light absorption structure 122, that is, the display panel includes only the light absorption structure arranged around the R sub-pixel, and the second light absorption structure 122 may be arranged in a one-to-one correspondence with the R sub-pixel.
  • the light absorption structure 120 can also be arranged in a one-to-one correspondence with any two of the three sub-pixels in the photosensitive area 200.
  • FIG. 14 is a cross-sectional view along the dotted line AA in FIG. 13, and the display panel can include a first light absorption structure 121 and a second light absorption structure 122 at the same time, and the first light absorption structure 121 can correspond to any two of the three sub-pixels in the photosensitive area 200.
  • the second light absorption structure 122 can be arranged in a one-to-one correspondence with the R sub-pixel.
  • Figure 16 is a cross-sectional view along the dotted line AA in Figure 15, and the display panel can include the second light absorption structure 122 and the third light absorption structure 123 at the same time, and the second light absorption structure 122 can be arranged in a one-to-one correspondence with the R sub-pixel, and the third light absorption structure 123 can be arranged in a one-to-one correspondence with the B sub-pixel.
  • Figure 18 is a cross-sectional view along the dotted line AA in Figure 17, and the display panel can also include the first light absorption structure 121 and the third light absorption structure 123 at the same time, and the first light absorption structure 121 can be arranged in a one-to-one correspondence with the G sub-pixel, and the third light absorption structure 123 can be arranged in a one-to-one correspondence with the B sub-pixel.
  • Figure 20 is a cross-sectional view along the dotted line AA in Figure 19, and the display panel may also simultaneously include a first light absorption structure 121, a second light absorption structure 122 and a third light absorption structure 123, that is, the three sub-pixels R, G, and B in the photosensitive area 200 are all provided with light absorption structures 120 corresponding to them one by one.
  • green light accounts for the highest proportion of white light and is mainly sensed by the photoelectric sensor 101.
  • the green light decays the slowest, so the green light has the greatest impact on the sensing accuracy of the photoelectric sensor 101. Therefore, in a preferred embodiment of the present disclosure, when the photosensitive area 200 includes only one light absorption structure, it can be that the light absorption structure 121 is only arranged one-to-one in the circumference of the G sub-pixel as shown in FIG2 to improve the lateral light leakage of green light and enhance the sensing accuracy of the photoelectric sensor 101 for ambient light.
  • the photosensitive area 200 includes two light absorption structures
  • the second light absorption structure 122 is arranged one-to-one in the circumference of the R sub-pixel and the first light absorption structure 121 is arranged one-to-one in the circumference of the G sub-pixel as shown in FIG10
  • the first light absorption structure 121 is arranged one-to-one in the circumference of the G sub-pixel and the third light absorption structure 123 is arranged one-to-one in the circumference of the B sub-pixel as shown in FIG12
  • the sensing accuracy of ambient light is also improved by improving the light absorption effect for green light.
  • the minimum absorption wavelength of the first light absorption structure 121 is less than or equal to the minimum light emission wavelength of the G sub-pixel, and the maximum absorption wavelength of the first light absorption structure 121 is greater than or equal to the maximum light emission wavelength of the G sub-pixel.
  • the material of the first light absorption structure 121 includes a compound represented by the following structural formula (1):
  • the compound of the structural formula (1) can be added to the precursor of polyimide, and the first light absorption structure 121 can be prepared by an exposure process.
  • FIG21 shows the absorption spectrum curve of the compound. As shown in FIG21, the compound has a strong absorption effect on the green light band.
  • the first light absorption structure 121 formed in this way can absorb the lateral light leakage of the G sub-pixel to prevent the light from leaking to the photoelectric sensor 101.
  • the material of the first light absorption structure 121 can also be a black material.
  • the black material can be a black polyimide glue (PI), which can also be prepared by an exposure process to form the first light absorption structure 121.
  • PI glue has strong light absorption in the 300-700nm band. Therefore, the first light absorption structure 121 formed can also absorb the lateral light leakage of the G sub-pixel to prevent light leakage to the photoelectric sensor 101.
  • the material of the second light absorption structure 122 and the third light absorption structure 123 can also be a black material.
  • the second light absorption structure 122 and the third light absorption structure 123 formed by black materials also have a good light absorption effect on the lateral light leakage of the R sub-pixel and the B sub-pixel.
  • Figure 22 is a cross-sectional view of a light absorption structure and a sub-pixel according to an embodiment of the present disclosure, and three sub-pixels R, G, and B are shown in the figure.
  • the inner wall of the light absorption structure 120 can be in contact with the side wall of the first electrode ANO of the corresponding sub-pixel.
  • the inner wall of the light absorption structure 120 refers to the side wall of the light absorption structure 120 facing the sub-pixel surrounded by the light absorption structure 120.
  • the first electrode ANO has a certain thickness in the thickness direction of the driving backplane 110, so that the first electrode ANO has a side wall facing the light absorption structure 120.
  • the inner wall of the light absorption structure 120 is in contact with the side wall of the first electrode ANO of the corresponding sub-pixel, that is, the light absorption structure 120 is arranged circumferentially in contact with the side wall of the first electrode ANO of the corresponding sub-pixel. Therefore, under this structure, there is no gap between the light absorption structure 120 and the first electrode ANO surrounded by it, and this structure can prevent some light at a specific angle from entering the photoelectric sensor 101 on the non-display side through the gap between the light absorption structure 120 and the first electrode ANO. Light absorption effect for lateral light leakage of sub-pixels.
  • the light c generated by the residual light-emitting layer materials may just pass through the gap between the light absorption structure 120 and the corresponding sub-pixel at a specific angle and be transmitted to the photosensor 101 on the non-display side.
  • the light absorption structure 120 because the inner wall of the light absorption structure 120 directly contacts the side wall of the first electrode ANO of the sub-pixel surrounded by it, the light absorption structure 120 can absorb light at extreme angles such as the light c, so that the light absorption structure 120 has the best light absorption effect.
  • FIG23 is a cross-sectional view of a light absorption structure and a sub-pixel according to another embodiment of the present disclosure
  • FIG24 is a cross-sectional view of a light absorption structure and a sub-pixel according to yet another embodiment of the present disclosure.
  • the light absorption structure 120 may also partially overlap with the first electrode ANO, for example, as shown in FIG23, part of the light absorption structure 120 is located on the first electrode ANO and part is located on the driving backplane; or as shown in FIG24, the light absorption structure 120 is entirely located on the first electrode ANO. All of these belong to the protection scope of the present disclosure.
  • FIG25 is a top view of a light absorption structure and a sub-pixel according to another embodiment of the present disclosure
  • FIG26 is a cross-sectional view along the dotted line AA in FIG25 , showing three sub-pixels in a pixel unit, and taking the light absorption structure 120 as an example for exemplary description.
  • the inner wall of the light absorption structure 120 may have a gap with the side wall of the first electrode ANO of the corresponding sub-pixel, that is, the inner wall of the light absorption structure 120 does not contact the side wall of the first electrode ANO of the sub-pixel surrounded by it.
  • the positive projection of the light absorption structure 120 on the driving backplane 110 is a ring, which surrounds the outer periphery of the positive projection of the corresponding sub-pixel on the driving backplane 110.
  • the positive projection of the light absorption structure 120 on the driving backplane 110 may be a circular ring or a regular polygonal ring, and the regular polygonal ring may be, for example, a rectangular ring, a regular five-shaped ring, a regular hexagonal ring, etc.
  • the orthographic projection of the light absorption structure 120 on the driving back plate 110 may also be an irregular ring.
  • FIG27 is a partial enlarged view of a light absorption structure in FIG25 .
  • the orthographic projection of the light absorption structure 120 on the driving back plate 110 has an inner side L1 and an outer side L2 that are opposite to each other.
  • a first straight line k that passes through any first node on the inner side L1 and extends along the first direction intersects the outer side L2 at a second node.
  • the first node and the second node have a third width d3 in the first direction.
  • the light absorption structure 120 has a gap between the inner side L1 of the orthographic projection of the driving backplane 110 and the edge of the orthographic projection of the first electrode ANO of the corresponding sub-pixel on the driving backplane 110, and the first straight line k and the edge of the orthographic projection of the first electrode ANO on the driving backplane 110 intersect at a third node, and the first node and the third node have a second width d2 in the first direction, and the second width d2 is less than or equal to the third width d3.
  • the orthographic projection of the light absorption structure 120 on the driving backplane 110 can be a circular ring or a polygonal ring.
  • the first straight line k is not tangent to the inner side L1; when the orthographic projection of the light absorption structure 120 on the driving backplane 110 is a polygonal ring, the first straight line k intersects with the inner side L1. In this way, it is ensured that the first straight line k can have intersections with the inner side L1, the outer side L2 and the orthographic projection edge of the first electrode ANO.
  • the second width d2 is less than or equal to the third width d3, indicating that the thickness of the light absorption structure 120 is greater than the gap width between the light absorption structure 120 and the first electrode ANO of the corresponding sub-pixel.
  • the third width d3 has a minimum value recorded as the first width d1.
  • the first width d1 is the wall thickness of the light absorption structure 120.
  • the second width d2 is less than or equal to the first width d1, that is, the wall thickness of the light absorption structure 120 is greater than or equal to the gap width between the light absorption structure 120 and the first electrode ANO of the corresponding sub-pixel. Because the wall thickness of the light absorption structure 120 is small, when the first width d1 is less than or equal to the second width d2, it indicates that the gap between the light absorption structure 120 and the corresponding sub-pixel is also small, so that the amount of light transmitted to the photoelectric sensor 101 through the gap can be reduced, which is conducive to improving the absorption effect of the light absorption structure 120 on the lateral light leakage of the sub-pixel.
  • the ratio of the second width d2 to the first width d1 may be greater than or equal to 0 and less than or equal to 1, for example, it may be 0, 1/10, 1/9, 1/8, 1/7, 1/6, 1/5, 1/4, 1/3, 1/2, 1, etc.
  • the ratio of the second width d2 to the first width d1 is 0.
  • the wall thickness of the light absorption structure 120 is small, the wall thickness of the light absorption structure 120 can be the same as the gap width between the inner wall of the light absorption structure 120 and the first electrode ANO of the corresponding sub-pixel.
  • the distance between the inner wall of the light absorption structure 120 and the edge of the first electrode ANO of the corresponding sub-pixel can be made small enough, thereby avoiding the situation where the gap width between the inner wall of the light absorption structure 120 and the first electrode ANO is too large, causing part of the light to be transmitted to the photoelectric sensor 101 through the gap, thereby improving the absorption effect of lateral light leakage generated by the sub-pixel.
  • the first width d1 may be greater than or equal to 0.5 ⁇ m and less than or equal to 2 ⁇ m, for example, it may be 0.5 ⁇ m, 0.6 ⁇ m, 0.8 ⁇ m, 1 ⁇ m, 1.2 ⁇ m, 1.4 ⁇ m, 1.5 ⁇ m, 1.6 ⁇ m, 1.8 ⁇ m, 2.0 ⁇ m, etc.
  • the second width d2 may be greater than or equal to 0 and less than or equal to 0.5 ⁇ m, for example, it may be 0, 0.2 ⁇ m, 0.4 ⁇ m, 0.5 ⁇ m, etc.
  • the wall thickness of the light absorption structure 120 may be gradual, for example, it may be a structure that is narrow at the top and wide at the bottom, or it may be a structure that is wide at the top and narrow at the bottom.
  • the wall thickness of the light absorption structure 120 refers to the maximum thickness of the light absorption structure 120.
  • the wall thickness of the light absorption structure 120 gradually decreases in the direction away from the driving back plate 110, and the first width d1 is the thickness of the bottom surface of the light absorption structure 120 in contact with the driving back plate 110; or, the wall thickness of the light absorption structure 120 gradually increases in the direction away from the driving back plate 110, and the first width d1 is the thickness of the top surface of the light absorption structure 120 away from the driving back plate 110.
  • FIG30 is a cross-sectional view of a light absorption structure and a sub-pixel according to an embodiment of the present disclosure
  • FIG31 is a partial enlarged view of the light absorption structure in FIG30
  • the light absorption structure 120 may include a first structure layer M1 and a second structure layer M2 parallel to the driving backplane 110, the first structure layer M1 is located at any position of the second structure layer M2 on a side away from the driving backplane 110, and the orthographic projection of the first structure layer M1 on the driving backplane 110 is located within the orthographic projection of the second structure layer M1 on the driving backplane 110.
  • the first structure layer M1 and the second structure layer M2 can be understood as planar structures formed by cutting the light absorption structure 120 with a plane parallel to the driving backplane 110.
  • the first structure layer M1 is located at any position of the second structure layer M2 on a side away from the driving backplane 110, that is, in FIG. In the structure shown in FIG. 30 , the first structure layer M1 is located on the upper part of the second structure layer M2.
  • the orthographic projection of the first structure layer M1 on the driving backplane 110 is located within the orthographic projection of the second structure layer M2 on the driving backplane 110, indicating that the light absorption structure 120 is a structure that is narrow at the top and wide at the bottom.
  • the side wall of the light absorption structure 120 forms a climbing structure from the bottom close to the driving backplane 110 to the top away from the driving backplane 110.
  • FIG32 is a cross-sectional view of a light absorption structure and a sub-pixel according to another embodiment of the present disclosure
  • FIG33 is a partial enlarged view of the light absorption structure in FIG32.
  • the light absorption structure 120 includes a first structure layer M1 and a second structure layer M2 parallel to the driving backplane 110, and the first structure layer M1 is located at any position on the side of the second structure layer M2 away from the driving backplane 110, and the orthographic projection of the first structure layer M1 on the driving backplane 110 overlaps with the orthographic projection of the second structure on the driving backplane 110.
  • the dimensions of the light absorption structure 120 at different positions in the thickness direction of the driving backplane 110 are the same, that is, the light absorption structure 120 is a structure of equal width from top to bottom.
  • the structure of equal width from top to bottom is easy to realize in the process, which can reduce the difficulty of the preparation process.
  • the slope angle ⁇ is greater than or equal to 20° and less than or equal to 90°, for example, it can be 20°, 30°, 40°, 45°, 50°, 60°, 70°, 80°, etc.
  • the light absorption structure 120 has a bottom surface close to the driving back plate 110 and a top surface away from the driving back plate 110 in the thickness direction of the driving back plate 110.
  • the slope angle ⁇ can be understood as: the first tangent plane perpendicular to the driving back plate 110 in the thickness direction of the driving back plate 110 intersects with the outer side wall of the light absorption structure 120 at the fourth side L4 and intersects with the bottom surface of the light absorption structure 120 at the fifth side L5, and there is a first angle between the fourth side L4 and the fifth side L5, and the first angle is the slope angle ⁇ of the light absorption structure 120.
  • the first cutting plane is perpendicular to the plane where the driving backplane 110 is located, which is equivalent to cutting the light absorption structure 120 with the first cutting plane to form a fourth side L4 and a fifth side L5 on the side and bottom of the light absorption structure 120, respectively.
  • the first angle between the fourth side L4 and the fifth side L5 is the slope angle ⁇ of the light absorption structure 120.
  • the slope angle ⁇ is 90°
  • the light absorption structure 120 with equal width at the top and bottom as shown in FIG. 33 is formed.
  • the slope angle ⁇ is less than 90°
  • the light absorption structure 120 with narrow top and wide bottom as shown in FIG. 31 is formed.
  • the photosensitive area 200 usually corresponds to the distance sensor area, or in some terminals, the photosensitive area 200 and the under-screen fingerprint area have an overlapping area.
  • this exemplary embodiment sets the slope angle ⁇ of the light absorption structure 120 based on the above-mentioned angle range, which can shrink the lateral width of the light absorption structure 120, thereby reducing the space between the adjacent first electrodes ANO occupied by the light absorption structure 120, and reducing the impact on the transmittance of the photosensitive area 200, thereby ensuring that the photosensitive area 200 has a good transmittance.
  • FIG34 is a cross-sectional view of a light absorption structure and a sub-pixel according to another embodiment of the present disclosure
  • FIG35 is a partial enlarged view of the light absorption structure in FIG34.
  • the light absorption structure 120 includes a first structure layer M1 and a second structure layer M2 parallel to the driving backplane 110, and the first structure layer M1 is located at any position on the side of the second structure layer M2 away from the driving backplane 110; wherein the orthographic projection of the second structure layer M2 on the driving backplane 110 is located within the orthographic projection of the first structure layer M1 on the driving backplane 110.
  • the light absorption structure 120 in this exemplary embodiment forms a structure that is wide at the top and narrow at the bottom. It can be understood that the lateral light leakage generated by the sub-pixel will be emitted at different angles.
  • some light rays When some light rays are incident on the top of the pixel defining layer PDL at a certain angle, they will pass through the pixel defining layer PDL and be reflected by the second electrode layer above the pixel defining layer PDL. After being reflected by the second electrode layer, they may further pass through the pixel defining layer PDL to be incident on the photosensor 101 on the back of the display panel. For example, the light rays a and d in FIG.
  • the light ray d is closer to the sub-pixel than the light ray a, that is, the incident angle of the light ray d is smaller, which may cause this type of light ray with a smaller incident angle to be reflected by the second electrode layer and transmitted to the photosensor 101, that is, this type of light ray with a smaller incident angle may escape the light absorption structure 120.
  • the light absorption structure 120 is formed into a structure that is wide at the top and narrow at the bottom.
  • the light absorption structure 120 in this exemplary embodiment has a better light absorption effect on the lateral light leakage of the sub-pixel, which is more conducive to improving the photoelectric sensor.
  • the ambient light sensing accuracy of the device 101 is improved.
  • the slope angle ⁇ between the side wall and the bottom surface of the light absorption structure 120 can be greater than 90° and less than or equal to 160°, for example, it can be 100°, 110°, 120°, 130°, 140°, 150°, 160°, etc.
  • the meaning of the slope angle can be found in the introduction of the above embodiments, which will not be repeated here.
  • the width of the light absorption structure 120 can be shrunk to occupy a smaller pixel definition layer PDL space, thereby reducing the impact on the transmittance of the photosensitive area 200.
  • the increase in the slope angle can expand the width of the top surface of the light absorption structure 120, thereby improving the coverage angle of the lateral light leakage transmitted to the second electrode layer.
  • the light absorption structure 120 may penetrate the pixel definition layer PDL, that is, the top surface of the light absorption structure 120 and the top surface of the pixel definition layer PDL are located in the same plane parallel to the driving backplane 110.
  • the top surface of a certain structure described here can be understood as that the structure has a first end surface and a second end surface, the first end surface is in contact with the driving backplane 110, and the second end surface is opposite to the first end surface in the thickness direction of the driving backplane 110, and the second end surface is the top surface of the structure.
  • the light absorption structure 120 can directly absorb the light that is self-luminous due to lateral leakage of the luminescent material remaining on the pixel defining layer PDL, and on the other hand, in the thickness direction of the driving backplane, the light absorption structure 120 can block the light that leaks laterally to the second electrode layer within a larger angle range, thereby preventing this part of the light from being reflected by the second electrode layer and then transmitted to the photoelectric sensor 101. Therefore, by setting the light absorption structure 120 to penetrate the pixel defining layer PDL, it is more conducive to enhancing the light absorption effect of the light absorption structure 120 on lateral light leakage.
  • the light absorption structure 120 may not penetrate the pixel definition layer PDL in the thickness direction of the driving backplane 110.
  • the light absorption structure 120 has a top surface and a bottom surface that are relatively arranged in the thickness direction of the driving backplane, and the bottom surface of the light absorption structure 120 is closer to the driving backplane than the top surface.
  • the bottom surface of the light absorption structure 120 may be located on the driving backplane and/or on the first electrode ANO, and the pixel definition layer PDL covers the top surface of the light absorption structure 120.
  • the top and bottom surfaces of the light absorption structure 120 may have a first thickness.
  • the display panel may further include a second electrode layer (the second electrode layer may be, for example, a cathode layer).
  • the second electrode layer is located on the side of the pixel definition layer away from the driving backplane, and at least one side of a portion of the pixel definition layer PDL contacts the second electrode layer and the other side contacts the driving backplane, and the pixel definition layer PDL has a second thickness at a position contacting the second electrode layer, and the first thickness is less than the second thickness. That is, the height of the light absorption structure is less than the thickness of the pixel definition layer PDL.
  • the light absorption structure 120 has a certain wall thickness, only a very small part of the light can be reflected by the second electrode layer to the photoelectric sensor 101. Therefore, by reducing the thickness difference between the first thickness and the second thickness, for example, the ratio of the first thickness to the second thickness is greater than or equal to 0.6, for example, it can be 0.6, 0.7, 0.8, 0.9, etc., when the top of the light absorption structure is covered by the pixel defining layer PDL, the light absorption structure 120 can also have a good light absorption effect.
  • the present disclosure also provides a method for preparing a display panel, which can be used to prepare the display panel described in any of the above embodiments of the present disclosure, and the method may include the following steps:
  • a plurality of light absorption structures 120 are formed in at least a partial area of one side of the driving backplane 100, wherein the minimum light absorption wavelength of the light absorption structure 120 is less than or equal to the minimum light emission wavelength of the corresponding sub-pixel, and the maximum light absorption wavelength of the light absorption structure 120 is greater than or equal to the maximum light emission wavelength of the corresponding sub-pixel.
  • one side of the backplane 100 can be driven to deposit an organic material to form a planarization layer PLN, and then a metal material is deposited on the planarization layer PLN to form a first electrode layer, and then the first electrode layer is patterned to form a plurality of first electrodes ANO distributed in an array, and the first electrode ANO can be an anode.
  • a material having a light absorbing medium can be deposited on the photosensitive area 200 by a deposition process to form a light absorbing layer, and then the light absorbing layer is patterned by an exposure mask process to obtain a light absorbing structure 120, which can be arranged around the first electrode ANO.
  • the specific working principle and structural features of the light absorbing structure 120 can be referred to the introduction of the above embodiment, which will not be repeated here.
  • a pixel definition layer PDL is formed on one side of the driving backplane 100 .
  • the pixel definition layer PDL may be formed by depositing an organic material through a deposition process.
  • an encapsulation layer may be further formed, and the encapsulation layer may include a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer. Then, a touch control layer is formed on the encapsulation layer.
  • the present disclosure also provides a display device, which may include the display panel described in any of the above embodiments.

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Abstract

本公开提供一种显示面板及其制备方法、显示装置。该显示面板包括驱动背板（110），所述驱动背板（110）的一侧形成有出射不同颜色光线的多个子像素，所述子像素包括像素界定层（PDL），像素界定层（PDL）位于所述驱动背板（110）的一侧，所述像素界定层（PDL）具有像素开口，所述像素开口内形成有所述子像素的发光功能层；该显示面板还包括多个吸光结构（120），多个吸光结构（120）与至少部分所述子像素对应设置，所述吸光结构（120）位于所述像素界定层（PDL）且周向围设于与其对应的子像素，所述吸光结构（120）的最小吸光波长小于等于与其对应的子像素的最小发光波长，且所述吸光结构（120）的最大吸光波长大于等于与其对应的子像素的最大发光波长。

Description

一种显示面板及其制备方法、显示装置
交叉引用
本公开要求于2023年6月29日提交的申请号为202310788053.3名称为“一种显示面板及其制备方法、显示装置”的中国专利申请的优先权，该中国专利申请的全部内容通过引用全部并入本文。
技术领域
本公开涉及显示技术领域，具体而言，涉及一种显示面板及其制备方法、显示装置。
背景技术
有源矩阵有机电致发光器件(AMOLED)是新一代新型显示技术，应用前景巨大。OLED显示装置属于自主发光，具有驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽以及可以透明化制备等优点，可实现柔性显示与大面积全色显示。AMOLED由三种基色RGB构成阵列子像素，通过控制RGB子像素的发光亮度来显示不同的色度。通常终端设备在AMOLED面板背部安装环境光感应sensor来感测用户使用场景的亮暗程度，以自动调节终端设备的显示亮度，保护用户的视力同时也可降低本身功耗。相关技术中，存在感测精度低的问题。
需要说明的是，在上述背景技术部分公开的信息仅用于加强对本公开的背景的理解，因此可以包括不构成对本领域普通技术人员已知的现有技术的信息。
发明内容
本公开的目的在于克服上述现有技术的不足，提供一种显示面板及其制备方法、显示装置。
根据本公开的一个方面，提供一种显示面板，包括：驱动背板，所述驱动背板的一侧形成有出射不同颜色光线的多个子像素；像素界定层， 位于所述驱动背板的一侧，所述像素界定层具有像素开口，所述像素开口内形成有所述子像素的发光功能层；多个吸光结构，与至少部分所述子像素对应设置，所述吸光结构位于所述像素界定层且围绕对应像素开口周向设置，所述吸光结构的最小吸光波长小于等于与其对应的子像素的最小发光波长，且所述吸光结构的最大吸光波长大于等于与其对应的子像素的最大发光波长。
在本公开的示例性实施例中，所述显示面板具有感光区，所述感光区具有光电传感器；其中，所述吸光结构与所述感光区的至少部分子像素对应设置。
在本公开的示例性实施例中，所述感光区包括R子像素、G子像素和B子像素，所述吸光结构包括第一吸光结构；所述第一吸光结构至少与部分所述G子像素对应设置，所述第一吸光结构的最小吸光波长小于等于所述G子像素的最小发光波长，且所述第一吸光结构的最大吸光波长大于等于所述G子像素的最大发光波长。
在本公开的示例性实施例中，所述第一吸光结构的最小吸光波长还小于等于所述B子像素的最小发光波长，且所述第一吸光结构的最大吸光波长还大于等于所述B子像素的最大发光波长。
在本公开的示例性实施例中，所述感光区包括R子像素、G子像素和B子像素，所述吸光结构包括第一吸光结构、第二吸光结构和第三吸光结构中的两个吸光结构；其中，所述第一吸光结构至少与部分所述G子像素对应设置，所述第二吸光结构至少与部分所述R子像素对应设置，所述第三吸光结构至少与部分所述B子像素对应设置。
在本公开的示例性实施例中，所述感光区包括R子像素、G子像素和B子像素，所述吸光结构包括第一吸光结构、第二吸光结构和第三吸光结构；其中，所述第一吸光结构至少与部分所述G子像素对应设置，所述第二吸光结构至少与部分所述R子像素对应设置，所述第三吸光结构至少与部分所述B子像素对应设置。
在本公开的示例性实施例中，所述第一吸光结构、所述第二吸光结构和所述第三吸光结构的最小吸光波长相同、最大吸光波长也相同，且任意吸光结构的最小吸光波长大于等于所述B子像素的最小发光波长、 最大吸光波长还大于等于所述B子像素的最大发光波长。
在本公开的示例性实施例中，所述吸光结构的材料包括如下结构式(1)所示的化合物：
或者，所述吸光结构的材料为黑色材料。
在本公开的示例性实施例中，所述显示面板还包括：第一电极层，包括阵列分布的多个第一电极，所述像素界定层在所述第一电极处具有所述像素开口，所述发光功能层形成于所述第一电极背离所述驱动背板的一侧；其中，所述吸光结构在所述驱动背板的正投影与所述第一电极在所述驱动背板的正投影至少部分交叠。
在本公开的示例性实施例中，所述显示面板还包括：第一电极层，包括阵列分布的多个第一电极，所述像素界定层在所述第一电极处具有所述像素开口，所述发光功能层形成于所述第一电极背离所述驱动背板的一侧；其中，所述吸光结构在所述驱动背板的正投影与所述第一电极在所述驱动背板的正投影不交叠。
在本公开的示例性实施例中，所述显示面板还包括：第一电极层，包括阵列分布的多个第一电极，所述像素界定层在所述第一电极处具有所述像素开口，所述发光功能层形成于所述第一电极背离所述驱动背板的一侧；其中，所述吸光结构接触对应第一电极的侧壁。
在本公开的示例性实施例中，所述显示面板还包括：第一电极层，包括阵列分布的多个第一电极，所述像素界定层在所述第一电极处具有所述像素开口，所述发光功能层形成于所述第一电极背离所述驱动背板的一侧；其中，所述吸光结构在所述驱动背板的正投影具有的最小宽度为第一宽度，所述吸光结构与对应第一电极之间具有间隙，且间隙宽度小于等于第一宽度。
在本公开的示例性实施例中，所述间隙宽度与所述第一宽度之比大于0且小于等于1。
在本公开的示例性实施例中，所述吸光结构在所述驱动背板的厚度方向上贯穿所述像素界定层。
在本公开的示例性实施例中，所述吸光结构具有在所述驱动背板的厚度方向上相对设置的底面和顶面，所述底面位于所述顶面靠近所述驱动背板的一侧，所述像素界定层覆盖所述吸光结构的顶面。
在本公开的示例性实施例中，所述显示面板还包括：第二电极层，位于所述像素界定层背离所述驱动背板的一侧，且至少部分所述像素界定层的一侧接触所述第二电极层且另一侧接触所述驱动背板；其中，在所述驱动背板的厚度方向上，所述吸光结构的顶面与底面之间具有第一厚度，所述像素界定层在接触所述第二电极层的位置具有第二厚度，所述第一厚度与第二厚度之比大于等于0.6。
在本公开的示例性实施例中，所述吸光结构包括平行于所述驱动背板的第一结构层和第二结构层，所述第一结构层位于所述第二结构层远离所述驱动背板一侧的任意位置；其中，所述第一结构层在所述驱动背板的正投影位于所述第二结构在所述驱动背板的正投影内，或者，所述第一结构层在所述驱动背板的正投影与所述第二结构在所述驱动背板的正投影重叠。
在本公开的示例性实施例中，所述吸光结构包括平行于所述驱动背板的第一结构层和第二结构层，所述第一结构层位于所述第二结构层远离所述驱动背板一侧的任意位置；其中，所述第二结构层在所述驱动背板的正投影位于所述第一结构层在所述驱动背板的正投影内。
在本公开的示例性实施例中，所述吸光结构在所述驱动背板的正投影为圆环或正多边形环。
在本公开的示例性实施例中，所述吸光结构在所述驱动背板的正投影具有的最小宽度为第一宽度，所述第一宽度大于等于0.5μm且小于等于2μm。
在本公开的示例性实施例中，所述吸光结构的侧壁与底面形成的坡度角大于等于20°且小于等于90°。
在本公开的示例性实施例中，所述吸光结构的侧壁与底面形成的坡度角大于90°且小于等于160°。
在本公开的示例性实施例中，所述子像素至少包括在所述驱动背板的一侧层叠设置的第一发光单元和第二发光单元，所述第一发光单元通过电荷产生层串联；所述子像素具有发光阶段和非发光阶段，位于所述感光区的光电传感器具有感测阶段和非感测阶段，其中，所述光电传感器的感测阶段与所述子像素的发光阶段不交叠。
根据本公开的第二方面，还提供一种显示面板制备方法，用于制备本公开任意实施例所述的显示面板，所述方法包括：提供驱动背板；在所述驱动背板的一侧的至少部分区域形成多个吸光结构，其中，所述吸光结构的最小吸光波长小于等于与其对应的子像素的最小发光波长，且所述吸光结构的最大吸光波长大于等于与其对应的子像素的最大发光波长；在所述驱动背板的一侧形成像素界定层；利用构图工艺在所述像素界定层形成像素开口，其中，所述吸光结构围绕对应像素开口周向设置；利用蒸镀工艺在所述像素开口内形成发光功能层。
根据本公开的第三方面，还提供一种显示装置，包括本公开任意实施例所述的显示面板。
本公开提供的显示面板，像素界定层设置有吸光结构，吸光结构的最小吸光波长小于等于对应子像素的最小发光波长，且吸光结构的最大吸光波长大于等于对应子像素的最大发光波长，从而吸光结构对与其对应的子像素发出的光具有吸收作用。吸光结构围绕像素开口周向设置，使得吸光结构能够吸收对应子像素产生的横向漏光，阻止横向漏光传向显示面板中检测环境光的光电传感器，由此而减小了光电传感器受到的非环境光干扰，提高了光电传感器对于环境光的感测精度。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本公开。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本公开的实施例，并与说明书一起用于解释本公开的原理。显而易见地， 下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为根据本公开一种实施方式的显示面板的结构示意图；
图2为图1中感光区的局部放大图；
图3为图2中沿虚线AA方向的剖视图；
图4为相关技术中子像素的横向漏光被光电传感器感测的示意图；
图5为根据本公开一种实施方式的子像素的叠层示意图；
图6为根据本公开一种实施方式的像素驱动电路的电路示意图；
图7为图6中像素驱动电路一种驱动方法中各节点的时序图；
图8为根据本公开一种实施方式的在EM关闭阶段子像素的亮度衰减曲线图；
图9-图20为根据本公开一种实施方式的吸光结构在感光区的分布示意图；
图21为根据本公开一种实施方式的化合物的吸光光谱曲线；
图22为根据本公开一种实施方式的吸光结构与子像素的剖视图；
图23为根据本公开另一种实施方式的吸光结构与子像素的剖视图；
图24为根据本公开再一种实施方式的吸光结构与子像素的剖视图；
图25为根据本公开另一种实施方式的吸光结构与子像素的俯视图；
图26为图25中沿虚线AA方向的剖视图；
图27-图29为图25中一个吸光结构的局部放大图；
图30为根据本公开一种实施方式的吸光结构与子像素的剖视图；
图31为图30中吸光结构局部放大图；
图32为根据本公开另一种实施方式的吸光结构与子像素的剖视图；
图33为图32中吸光结构的局部放大图；
图34为根据本公开再一种实施方式的吸光结构与子像素的剖视图；
图35为图34中吸光结构的局部放大图；
图36-图39为根据本公开一种实施方式的显示面板的制备方法流程图。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的实施方式；相反，提供这些实施方式使得本公开将全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。图中相同的附图标记表示相同或类似的结构，因而将省略它们的详细描述。此外，附图仅为本公开的示意性图解，并非一定是按比例绘制。
相关技术中，通常终端设备会在AMOLED面板背部安装环境光感应光电传感器来识别用户使用场景的亮暗程度，以动态调节终端设备的显示亮度，保护用户视力同时也可降低本身功耗。
OLED在断电后器件放电过程中释放出的光，经过阳极、阴极Cathode以及有机无机膜层折射反射，透过驱动背板走线空白区域，被背板下方的环境光感应光电传感器接收到，从而影响环境光感应光电传感器的敏感度。
图1为根据本公开一种实施方式的显示面板的结构示意图，图2为图1中感光区的局部放大图，图3为图2中沿虚线AA方向的剖视图，如图2和图3所示，该显示面板可以包括驱动背板110、像素界定层PDL和多个吸光结构120，其中，驱动背板110的一侧形成有出射不同颜色光线的多个子像素，像素界定层PDL位于驱动背板110的一侧，像素界定层PDL具有像素开口，像素开口内形成有子像素的发光功能层；吸光结构120与至少部分子像素对应设置，吸光结构120位于像素界定层PDL且围绕对应像素开口周向设置，吸光结构120的最小吸光波长小于等于与其对应的子像素的最小发光波长，且吸光结构120的最大吸光波长大于等于与其对应的子像素的最大发光波长。
本公开提供的显示面板，像素界定层PDL设置有吸光结构120，吸光结构120的最小吸光波长小于等于对应子像素的最小发光波长，且吸光结构120的最大吸光波长大于等于对应子像素的最大发光波长，从而吸光结构120对与其对应的子像素发出的光具有吸收作用。吸光结构120围绕像素开口周向设置，使得吸光结构120能够吸收对应子像素产生的横向漏光，阻止横向漏光传向显示面板中检测环境光的光电传感器101， 由此而减小了光电传感器101受到的非环境光干扰，提高了光电传感器101对于环境光的感测精度。
本公开吸光结构120与至少部分子像素对应设置可以理解为，显示面板中的至少部分子像素设置有吸光结构120，例如吸光结构120与部分子像素一一对应设置。举例而言，如图1所示，显示面板可以具有感光区200，感光区200可以位于显示区，在该感光区200可设置有用于识别环境光明暗程度的光电传感器101，基于该光电传感器101的感测信号可以对显示设备的显示亮度进行自动调节。因此本公开的多个吸光结构120与至少部分子像素对应设置，具体可以为多个吸光结构120与该感光区200的至少部分子像素对应设置。如图1所示，本公开感光区200位于显示区内，感光区200除了设置有光电传感器101和吸光结构120外可以具有显示区其他区域的全部特征，此处不再赘述。
如图2所示，吸光结构120围绕对应像素开口周向设置，即吸光结构120在像素开口的周向围成一区域，与其对应的像素开口位于该区域内。例如，吸光结构120在驱动背板110的正投影为一环形，像素开口在驱动背板110的正投影位于该环形正投影内。
如图3所示，吸光结构120在对应像素开口周向设置，如此，像素开口内的子像素产生的横向漏光(包括由子像素直接产生的光线以及经其他膜层反射后的光线)会被传输至该吸光结构120，即吸光结构120相当于位于子像素的横向漏光的传播路径上，这样，子像素所产生的横向漏光会被位于光线传输路径上的吸光结构120吸收，从而可以阻止子像素产生的横向漏光传向光电传感器101，使得光电传感器101在感测阶段仅感测到环境光，如此而消除子像素的横向漏光对于环境光检测结果的影响，提高对于环境光的感测精度。作为对比，图4为相关技术中子像素的横向漏光被光电传感器感测的示意图，如图4所示，光线a、光线b经过经第二电极层(例如可以为阴极层)反射后透过下方的有机层而传输至驱动背板下方的环境光传感器，光线c经像素界定层和有机层的折射后直接传输至下方的光电传感器101，如此使得光电传感器101的检测结果失准。对比图3可以看出，在设置吸光结构后，源于子像素的横向漏光的光线a、光线b以及光线c均会被周向围设的吸光结构120 所吸收，使得光电传感器101的检测结果不再受到子像素的横向漏光影响，因此本公开通过设置吸光结构120能够提升对于环境光的感测精度。
本公开的吸光结构120中包含有吸光材料，以通过吸光材料吸收特定波长的光。最小吸光波长和最大吸光波长为吸光结构120的极限吸光波长，最小吸光波长即为吸光结构120能够吸收的光的最小波长，即小于最小吸光波长的光线无法被吸光结构120吸收。最大吸光波长即为吸光结构120能够吸收的最大波长，即大于最大吸光波长的光线无法被吸光结构120吸收，换言之，波长介于最小吸光波长和最大吸光波长之间的光线会被吸光结构120所吸收。于本公开而言，吸光结构120的最小吸光波长大于等于对应子像素的最小发光波长，且吸光结构120的最大吸光波长大于等于对应子像素对应子像素的最大发光波长，即吸光结构120能够吸收对应子像素发出的全波段的光。本公开的显示面板块可以是OLED显示面板，OLED显示面板可以具有有机电致发光层，可以通过测定形成子像素的有机电致发光层材料发出的不同波长的光的发光强度而绘制得到该子像素的最小发光波长和最大发光波长，最小发光波长即为该有机电致发光层材料发出的光所在波段的最小波长，最大发光波长即为该有机电致发光层材料发出的光所在波段的最大波长。
本公开显示面板在显示区可以包括像素界定层PDL、第一电极层、发光功能层和第二电极层。如图3所示，像素界定层PDL与第一电极层设于驱动背板110的同一表面，且像素界定层PDL露出各第一电极ANO。具体而言，像素界定层PDL可设有露出各第一电极ANO的多个像素开口。任一像素开口在衬底基板上的正投影可位于其露出的第一电极ANO以内，也就是说，像素开口不大于其露出的第一电极ANO，举例而言：像素开口的边界位于其露出的第一电极ANO的边界的内侧，即像素开口的面积小于其露出的第一电极ANO的面积。像素开口的形状可以是矩形、五边形、六边形等多边形，但不一定是正多边形，像素开口的形状还可以是椭圆形等其它形状，在此不做特殊限定。第一电极层可以为阳极层，第二电极层可以为阴极层。本公开仅以第一电极层为阳极层，第二电极层为阴极层为例进行示例性说明，当然，在其他实施例中，第一电极层也可以是阴极层，第二电极层也可以是阳极层。
如图3所示，发光功能层覆盖像素界定层PDL和第一电极ANO，发光功能层与第一电极ANO层叠的区域用于形成子像素。发光功能层位于像素开口内，并且吸光结构围绕像素开口周向设置，如此相当于，吸光结构围绕子像素周向设置。
本公开的子像素可以为叠层OLED器件(Tandem OLED)，即包括多个串联的发光器件OLED，相对于单层OLED器件(Single OLED)，Tandem OLED器件同时具备高效率和长寿命的特性。图5为根据本公开一种实施方式的子像素的叠层示意图，如图5所示，每个子像素均包括第一电极ANO、第二电极CAT以及第一电极ANO和第二电极CAT之间的多个子发光层(图中仅以子像素包括第一子发光层10和第二子发光层20两个子发光层为例进行示例性说明)，同一子像素的各发光器件可共用同一第一电极ANO和同一第二电极CAT，也就是说，同一子像素可以只有一个第一电极ANO和一个第二电极CAT。
举例而言，如图5所示，发光功能层可包括沿背离驱动背板110的方向串联的多层子发光层，至少一子发光层通过电荷生成层CGL与相邻的一子发光层串联。在向第一电极ANO和第二电极CAT施加电信号时，各子发光层均可发光，且不同的子发光层可用于发出不同颜色的光线。
任一子发光层可包括沿背离驱动背板110的厚度方向分布的空穴注入层HIL、空穴传输层HTL、有机电致发光层EML、电子传输层ETL和电子注入层EIL，具体发光原理在此不再详述，其中，空穴注入层HIL、空穴传输层HTL、电子传输层ETL和电子注入层EIL的数量在此不做特殊限定，且相邻的子发光层可共用空穴注入层HIL、空穴传输层HTL、电子传输层ETL和电子注入层EIL中的一个或多个。同时，至少有两个相邻的子发光层之间可设有电荷生成层CGL，从而将两子发光层串联，形成Tandem OLED器件。
此外，显示面板还可包括彩膜层(图中未示出)，彩膜层可设于第二电极CAT背离驱动背板110的一侧，且包括多个滤光部，各第一电极ANO与各滤光部在垂直于驱动背板110的方向上一一相对设置，即一滤光部在驱动背板110上的正投影与一第一电极ANO至少部分重合。各个滤光部中至少包括三种颜色的滤光部，例如，可以包括透红光的滤光部、 透过绿光的滤光部和透过蓝光的滤光部。各发光单元发出的光线经过滤光部作用后，可得到不同颜色的单色光，从而实现彩色显示，其中，一滤光部与其对应的发光单元可构成一子像素，任一子像素发光的颜色即为其滤光部透过的光线的颜色，多个子像素可构成一像素，同一像素的各子像素的发光颜色不同。彩膜层还可包括分隔滤光部的遮光部，遮光部不透光，并遮挡两发光单元之间的区域。
上述的发光功能层结构仅为示例性说明，并不构成对其膜层的限制，其可以是仅包括两个子发光层，也可以更多，或者仅包括一个子发光层，只要能配合彩膜层实现彩色显示即可。
驱动背板可以包括形成像素驱动电路的多个晶体管，像素驱动电路例如可以为7T1C、8T1C等。以7T1C为例，图6为根据本公开一种实施方式的像素驱动电路的电路示意图，如图6所示，该像素驱动电路可以包括：第一晶体管T1、第二晶体管T2、驱动晶体管T3、第四晶体管T4、第五晶体管T5、第六晶体管T6、第七晶体管T7、电容C。其中，第一晶体管T1的第一极连接节点N，第二极连接第一初始信号端Vinit1，栅极连接复位信号端Re1；第二晶体管T2第一极连接驱动晶体管T3的第一极，第二极连接节点N；栅极连接栅极驱动信号端Gate；驱动晶体管T3的栅极连接节点N；第四晶体管T4的第一极连接数据信号端Da，第二极连接驱动晶体管T3的第二极，栅极连接栅极驱动信号端Gate；第五晶体管T5的第一极连接驱动晶体管T3的第二极，第二极连接第一电源端VDD，栅极连接使能信号端EM；第六晶体管T6第一极连接驱动晶体管T3的第一极，栅极连接使能信号端EM；第七晶体管T7的第一极连接第六晶体管T6的第二极，第二极连接第二初始信号端Vinit2，栅极连接复位信号端Re2。电容C连接于驱动晶体管T3的栅极和第一电源端VDD之间。该像素驱动电路可以连接一发光单元OLED(发光单元OLED例如可以为上述的Tandem OLED)，用于驱动该发光单元OLED发光，发光单元OLED可以连接于第六晶体管T6的第二极和第二电源端VSS之间。其中，晶体管T1～T7可以均为P型晶体管或N型晶体管，或者部分为P型晶体管，部分为N型晶体管。例如，第一晶体管T1～第七晶体管T7均为P型晶体管或者均为N型晶体管，或者，第一晶体 管T1和第二晶体管T2为P型晶体管，第三晶体管T3～第七晶体管T7为N型晶体管等。
需要说明的是，本公开各实施例中采用的晶体管均可以为薄膜晶体管或场效应管或其他特性相同的器件。在本说明书中，第一极可以为漏电极、第二极可以为源电极，或者第一极可以为源电极、第二极可以为漏电极。
图7为图6中像素驱动电路一种驱动方法中各节点的时序图。其中，Gate表示栅极驱动信号端Gate的时序，Re1表示复位信号端Re1的时序，Re2表示复位信号端Re2的时序，EM表示使能信号端EM的时序，Da表示数据信号端Da的时序。该像素驱动电路的驱动方法可以包括复位阶段t1、补偿阶段t2，发光阶段t3。在复位阶段t1：复位信号端Re1输出低电平信号，第一晶体管T1导通，第一初始信号端Vinit1向节点N输入初始信号。在补偿阶段t2：复位信号端Re2、栅极驱动信号端Gate输出低电平信号，第四晶体管T4、第二晶体管T2、第七晶体管T7导通，同时数据信号端Da输出驱动信号以向节点N写入电压Vdata+Vth，其中Vdata为驱动信号的电压，Vth为驱动晶体管T3的阈值电压，第二初始信号端Vinit2向第六晶体管T6的第二极输入初始信号。发光阶段t3：使能信号端EM输出低电平信号，第六晶体管T6、第五晶体管T5导通，发光单元OLED在电容C存储的电压Vdata+Vth作用下发光。根据驱动晶体管输出电流公式I＝(μWCox/2L)(Vgs-Vth)2，其中，μ为载流子迁移率；Cox为单位面积栅极电容量，W为驱动晶体管沟道的宽度，L驱动晶体管沟道的长度，Vgs为驱动晶体管栅源电压差，Vth为驱动晶体管阈值电压。本公开像素驱动电路中驱动晶体管的输出电流I＝(μWCox/2L)(Vdata+Vth-Vdd-Vth)2。该像素驱动电路能够避免驱动晶体管阈值电压对其输出电流的影响。
AMOLED显示面板的调光模式主要为PWM(Pulse width modulation脉冲宽度调制)调光，显示设备的显示亮度可通过控制Emission信号占空比(duty)进行调节。图8为根据本公开一种实施方式的在EM信号关闭阶段子像素的亮度衰减曲线图，如图8所示，本公开光电传感器101是在使能信号端EM的关闭阶段打开以进行环境光感测，OLED器件可 以看作是电阻和电容并联的等效电路，器件本身的电容会影响到其对电压的响应速度，即器件电容越大，OLED器件在相同电流下达到启亮电位的时间越长，同理，在放电电流一定的情况下，放电时间亦随器件电容增大而增长。Tandem OLED器件本身的电容相较于Single OLED器件变大，受到Tandem OLED器件自身较大电容的影响，如图8中的t0阶段所示，Tandem OLED器件在接收到使能信号端EM的关闭信号后，其放电过程会较缓慢，无法迅速将OLED亮度降低到目标值。如此而使得光电传感器101在使能信号端EM输出关闭信号阶段而感测到子像素的横向漏光从而降低了对于环境光的感测精度。
下面对本公开显示面板的结构和原理进行详细说明。
在示例性实施例中，驱动背板110上形成的多个子像素通常可以包括R子像素、G子像素和B子像素，本公开吸光结构120可以仅与上述的感光区200中三种子像素中的一种子像素一一对应设置，例如，吸光结构120可以包括第一吸光结构121、第二吸光结构122和第三吸光结构123，其中的第一吸光结构121为围绕G子像素周向设置的吸光结构，第二吸光结构122为围绕R子像素周向设置的吸光结构，第三吸光结构123为围绕B子像素周向设置的吸光结构。
举例而言，如图2所示，显示面板可以仅包括第一吸光结构121，即显示面板仅包括围绕G子像素周向设置的吸光结构，并且第一吸光结构121可以与G子像素一一对应设置。或者如图9和图10所示，图10为图9中沿虚线AA的剖视图，显示面板可以仅包括第三吸光结构123，即显示面板仅包括围绕B子像素周向设置的吸光结构，并且第三吸光结构123可以与B子像素一一对应设置。或者，图11和图12所示，图12为图11中沿虚线AA的剖视图，显示面板可以仅包括第二吸光结构122，即显示面板仅包括围绕R子像素周向设置的吸光结构，并且第二吸光结构122可以与R子像素一一对应设置。
在另一些实施例中，吸光结构120还可以与该感光区200中三种子像素中的任意两种子像素一一对应设置，例如，如图13和图14所示，图14为图13中沿虚线AA的剖视图，显示面板可以同时包括第一吸光结构121和第二吸光结构122，并且第一吸光结构121可以与G子像素 一一对应设置，第二吸光结构122可以与R子像素一一对应设置。或者如图15和图16所示，图16为图15中沿虚线AA的剖视图，显示面板可以同时包括第二吸光结构122和第三吸光结构123，第二吸光结构122可以与R子像素一一对应设置，第三吸光结构123可以与B子像素一一对应设置。或者如图17和图18所示，图18为图17中沿虚线AA的剖视图，显示面板还可以同时包括第一吸光结构121和第三吸光结构123，并且第一吸光结构121可以与G子像素一一对应设置，第三吸光结构123可以与B子像素一一对应设置。
在另一些实施例中，如图19和图20所示，图20为图19中沿虚线AA的剖视图，显示面板还可以同时包括第一吸光结构121、第二吸光结构122和第三吸光结构123，即感光区200中的R、G、B三种子像素均设置有与其一一对应的吸光结构120。
通常，绿光在白光中占比最高，主要为光电传感器101所感测，但是器件结构中，绿光衰减速度最慢，因此绿光对于光电传感器101的感测精度影响最大。因此，在本公开的优选实施例中，当感光区200中仅包括一种吸光结构时，可以是图2所示仅在G子像素周向一一对应地设置吸光结构121，以改善绿光的横向漏光，增强光电传感器101对于环境光的感测精度。或者，当感光区200中包括两种吸光结构时，可以是图10所示在R子像素周向一一对应地设置第二吸光结构122以及在G子像素周向一一对应地设置第一吸光结构121，或者如图12所示在G子像素周向一一对应地设置第一吸光结构121以及在B子像素周向一一对应地设置第三吸光结构123，同样通过提升对于绿光的吸光效果而提升对于环境光的感测精度。
如图2所示，在示例性实施例中，当感光区200仅包括第一吸光结构121时，第一吸光结构121的最小吸光波长小于等于G子像素的最小发光波长，且第一吸光结构121的最大吸光波长大于等于G子像素的最大发光波长。
举例而言，第一吸光结构121的材料包括如下结构式(1)所示的化合物：
例如，可以在聚酰亚胺的前驱体夜中加入上述结构式(1)的化合物，通过曝光工艺制备成第一吸光结构121。图21示出了该化合物的吸光光谱曲线，如图21所示，该化合物对绿光波段具有强吸收效果，如此形成的第一吸光结构121可以将G子像素的横向漏光进行吸收，避免漏光至光电传感器101。
此外，第一吸光结构121的材料还可以为黑色材料。例如，黑色材料可为黑色聚酰亚胺胶(PI)，同样可以通过曝光工艺制备形成第一吸光结构121，该黑色PI胶对300～700nm波段均有强的光吸收，因此形成的第一吸光结构121同样可以将G子像素的横向漏光进行吸收，避免漏光至光电传感器101。进一步的，第二吸光结构122和第三吸光结构123的材料也可以为黑色材料，由黑色材料形成的第二吸光结构122、第三吸光结构123对于R子像素和B子像素的横向漏光同样具有较好的吸光效果。
图22为根据本公开一种实施方式的吸光结构与子像素的剖视图，图中示出了R、G、B三个子像素，如图22所示，吸光结构120的内壁可以与对应子像素的第一电极ANO的侧壁相接触。具体地，吸光结构120的内壁是指吸光结构120面向被该吸光结构120所包围的子像素的侧壁。第一电极ANO在驱动背板110的厚度方向上具有一定的厚度，由此而使得第一电极ANO具有面向吸光结构120的侧壁。吸光结构120的内壁与对应子像素的第一电极ANO的侧壁相接触，即吸光结构120是贴合于对应子像素的第一电极ANO的侧壁周向设置。因此该结构下，吸光结构120与被其包围的第一电极ANO之间没有间隙，此结构可防止特定角度下的一些光线经由吸光结构120与第一电极ANO的间隙而进入到非显示侧的光电传感器101，因此该结构可以充分保证吸光结构120 对于子像素的横向漏光的吸光效果。
举例而言，通常像素界定层PDL上因Mask shadow问题会残留有机电致发光层材料，该残留的发光层材料会在OLED器件的横向漏电下自发光，如图4所示，残留的发光层材料产生的光线c可能在特定角度下刚好穿过吸光结构120与对应子像素之间的间隙而传输至非显示侧的光电传感器101，本示例性实施例中，因为吸光结构120的内壁直接接触被其包围的子像素的第一电极ANO的侧壁，因此，吸光结构120可以吸收诸如光线c这类极限角度的光线，使得吸光结构120具有最佳的吸光效果。
图23为根据本公开另一种实施方式的吸光结构与子像素的剖视图，图24为根据本公开再一种实施方式的吸光结构与子像素的剖视图，如图23和图24所示，在示例性实施例中，吸光结构120还可以与第一电极ANO部分交叠，例如，如图23所示，部分吸光结构120的部分位于第一电极ANO上、部分位于驱动背板上；或者如图24所示，吸光结构120全部位于第一电极ANO上。这些都属于本公开的保护范围。
图25为根据本公开另一种实施方式的吸光结构与子像素的俯视图，图26为图25中沿虚线AA方向的剖视图，图中示出了一个像素单元中的三个子像素，并且以三个子像素均设置吸光结构120为例进行示例性说明。如图25和图26所示，在示例性实施例中，吸光结构120的内壁可以与对应子像素的第一电极ANO的侧壁之间具有间隙，即吸光结构120的内壁与被其包围的子像素的第一电极ANO的侧壁不接触。如图25所示，吸光结构120在驱动背板110的正投影为环形，其包围在对应子像素在驱动背板110的正投影的外周。在一些实施例中，吸光结构120在驱动背板110的正投影可以为圆环或者正多边形环，正多边形环例如可以为矩形环、正五变形环、正六边形环等。在另外一些实施例中，吸光结构120在驱动背板110的正投影也可以为不规则的环。
图27为图25中一个吸光结构的局部放大图，如图27所示，吸光结构120在驱动背板110的正投影具有相对的内侧边L1和外侧边L2，经过内侧边L1上的任意第一节点且沿第一方向延伸的第一直线k与外侧边L2相交于第二节点，第一节点与第二节点在第一方向上具有第三宽度d3； 吸光结构120在驱动背板110的正投影的内侧边L1与对应子像素的第一电极ANO在驱动背板110的正投影的边沿之间具有间隙，且第一直线k与第一电极ANO在驱动背板110的正投影的边沿相交于第三节点，第一节点与第三节点在第一方向上具有第二宽度d2，第二宽度d2小于等于第三宽度d3。
其中，第一节点和第二节点之间具有第三宽度d3，第一节点与第三节点之间具有第二宽度d2，第二宽度d2反映了吸光结构120的内壁与对应子像素的第一电极ANO之间的间隙宽度，第三宽度d3反映了吸光结构120的壁厚。如上所述，吸光结构120在驱动背板110的正投影可以为圆环或者多边形环。当吸光结构120在驱动背板110的正投影为圆环时，第一直线k与内侧边L1不相切；当吸光结构120在驱动背板110的正投影为多边形环时，第一直线k与内侧边L1相交。如此以保证第一直线k能够与内侧边L1和外侧边L2以及第一电极ANO的正投影边沿均具有交点。
第二宽度d2小于等于第三宽度d3，表明吸光结构120的厚度要大于吸光结构120与对应子像素的第一电极ANO之间的间隙宽度。
特殊地，如图28所示，当吸光结构120在驱动背板110的正投影为圆环且第一直线k经过该圆环的圆心时，或者如图29所示，该吸光结构120在驱动背板110的正投影为多边形环且第一直线k与内侧边L1垂直时，该第三宽度d3具有最小值记为第一宽度d1，显然，第一宽度d1即为吸光结构120的壁厚，此时的第二宽度d2小于等于第一宽度d1，即吸光结构120的壁厚要大于等于吸光结构120与对应子像素的第一电极ANO之间的间隙宽度。因为吸光结构120的壁厚较小，因此在第一宽度d1小于等于第二宽度d2时，表明吸光结构120与对应子像素之间的间隙也较小，如此可以减少经由该间隙传输至光电传感器101的光线量，有利于提升吸光结构120对于子像素横向漏光的吸收效果。
在一些实施例中，第二宽度d2与第一宽度d1之比可以大于等于0且小于等于1，例如可以为0，1/10，1/9，1/8，1/7，1/6，1/5，1/4，1/3，1/2，1等。特殊地，当吸光结构120的内壁与对应子像素的第一电极ANO之间没有间隙时，即吸光结构120的内壁直接接触对应子像素的第一电 极ANO的边沿时，第二宽度d2即为0，相应地，第二宽度d2与第一宽度d1之比为0。当吸光结构120的壁厚较小时，吸光结构120的壁厚可以与吸光结构120的内壁与对应子像素的第一电极ANO之间的间隙宽度相同。
按照上述比例关系根据吸光结构120的宽度来对应设置吸光结构120的内壁与第一电极ANO的侧壁之间的间隙宽度，可使得吸光结构120的内壁与对应子像素的第一电极ANO的边沿之间的距离足够小，从而可以避免出现吸光结构120的内壁与第一电极ANO之间的间隙宽度过大大而造成部分光线经由该间隙传输至光电传感器101的情况，提高对于子像素产生的横向漏光的吸收效果。
举例而言，在一些实施例中，第一宽度d1可以大于等于0.5μm且小于等于2μm，例如可以为0.5μm，0.6μm，0.8μm，1μm，1.2μm，1.4μm，1.5μm，1.6μm，1.8μm，2.0μm等，相应地，第二宽度d2可以大于等于0且小于等于0.5μm，例如可以为0，0.2μm，0.4μm，0.5μm等。
此外，应该理解的，在驱动背板110的厚度方向上，吸光结构120的壁厚可以是渐变的，例如可以是上窄下宽的结构或者可以是上宽下窄的结构，此时，吸光结构120的壁厚是指吸光结构120的最大厚度。例如，吸光结构120的壁厚沿远离驱动背板110的方向逐渐减小，则第一宽度d1即为吸光结构120与驱动背板110接触的底面的厚度；或者，吸光结构120的壁厚由远离驱动背板110的方向逐渐增加，则第一宽度d1即为吸光结构120背离驱动背板110的顶面的厚度。
图30为根据本公开一种实施方式的吸光结构与子像素的剖视图，图31为图30中吸光结构的局部放大图，如图30和图31所示，吸光结构120可以包括平行于驱动背板110的第一结构层M1和第二结构层M2，第一结构层M1位于第二结构层M2远离驱动背板110一侧的任意位置，第一结构层M1在驱动背板110的正投影位于第二结构在驱动背板110的正投影内。其中，第一结构层M1、第二结构层M2可以理解为用平行于驱动背板110的平面切割吸光结构120而形成的平面结构。第一结构层M1位于第二结构层M2远离驱动背板110一侧的任意位置，即在图 30所示结构中，第一结构层M1位于第二结构层M2的上部。第一结构层M1在驱动背板110的正投影位于第二结构层M2在驱动背板110的正投影内，表明吸光结构120为上窄下宽的结构，换言之，吸光结构120的侧壁由靠近驱动背板110的底部向远离驱动背板110的顶部形成爬坡结构。
图32为根据本公开另一种实施方式的吸光结构与子像素的剖视图，图33为图32中吸光结构的局部放大图，如图32和图33所示，吸光结构120包括平行于驱动背板110的第一结构层M1和第二结构层M2，第一结构层M1位于第二结构层M2远离驱动背板110一侧的任意位置，第一结构层M1在驱动背板110的正投影与第二结构在驱动背板110的正投影重叠。此时，吸光结构120在驱动背板110的厚度方向上的不同位置的尺寸均相同，即吸光结构120为上下等宽结构。上下等宽的结构易于工艺实现，可以降低制备工艺难度。
继续参考图30～图33，吸光结构120的侧壁与底面之间具有坡度角，α，坡度角α大于等于20°且小于等于90°，例如可以为20°，30°，40°，45°，50°，60°，70°，80°等。如上文所述，吸光结构120具有在驱动背板110的厚度方向上靠近驱动背板110的底面和远离驱动背板110的顶面，本示例性实施例中，坡度角α可以理解为：在驱动背板110的厚度方向上垂直于驱动背板110的第一切平面与吸光结构120的外侧壁相交于第四侧边L4且与吸光结构120的底面相交于第五侧边L5，第四侧边L4与第五侧边L5之间具有第一夹角，该第一夹角即为吸光结构120的坡度角α。第一切平面垂直于驱动背板110所在平面，相当于用第一切平面切割吸光结构120而分别在吸光结构120的侧面和底面形成第四侧边L4和第五侧边L5，因此，第四侧边L4和第五侧边L5之间的第一夹角即为吸光结构120的坡度角α。当坡度角α为90°时，即形成图33所示的上下等宽的吸光结构120。当坡度角α小于90°时，即形成图31所示的上窄下宽的吸光结构120。
而可以理解的，在吸光结构120的高度一定的情况下，吸光结构120的坡度角越小，则吸光结构120的横向宽度就越宽，从而导致吸光结构120所占用的相邻两个第一电极ANO之间的空间就越大，导致像素界定 层PDL在该感光区200的有效透光面积减小，如此相当于降低了感光区200的开口率，造成感光区200的透光率降低。而在显示产品中，例如在一些终端设备中，感光区200通常与距离传感器区域对应，或者在一些终端中，感光区200与屏下指纹区存在重叠区域，当该感光区200在像素界定层PDL透光率降低后，会影响距离传感器以及屏下指纹传感器的正常运行。因此，本示例性实施例基于上述角度范围来设置吸光结构120的坡度角α，可以收缩吸光结构120的横向宽度，从而减小吸光结构120所占用的相邻第一电极ANO之间的空间，降低对于感光区200的透光率的影响，如此保证感光区200具有较好的透光率。
图34为根据本公开再一种实施方式的吸光结构与子像素的剖视图，图35为图34中吸光结构的局部放大图，如图34和图35所示，吸光结构120包括平行于驱动背板110的第一结构层M1和第二结构层M2，第一结构层M1位于第二结构层M2远离驱动背板110一侧的任意位置；其中，第二结构层M2在驱动背板110的正投影位于第一结构层M1在驱动背板110的正投影内。即本示例性实施例中的吸光结构120形成上宽下窄的结构。可以理解的，子像素产生的横向漏光会以不同的角度射出，当一些光线以一定角度入射至像素界定层PDL的顶部后会穿过像素界定层PDL而被像素界定层PDL上方的第二电极层反射，经第二电极层反射后可能会进一步经由像素界定层PDL入射至显示面板背部的光电传感器101，例如，图4中的光线a和光线d在穿过像素界定层PDL后会被第二电极层反射回像素界定层PDL，并穿过像素界定层PDL而传输至非显示侧的光电传感器101，可以看出，光线d相比于光线a更靠近子像素，即光线d的入射角度更小，由此便可能导致这类入射角更小的光线经由第二电极层反射后传向光电传感器101，即这类入射角更小的光线可能会逃逸吸光结构120。本示例性实施例中，将吸光结构120形成上宽下窄的结构，这样，因为吸光结构120的顶部更宽，其顶部可以覆盖那些入射角更小的光线从而避免这些光线逃逸，即此结构下吸光结构120能够在更大的角度范围内阻挡子像素的横向漏光，因此，相比于上述图30或图32所示的吸光结构120，本示例性实施例中的吸光结构120对于子像素的横向漏光的吸光效果更佳，更有利于提升光电传感 器101的环境光感测精度。
如图34所示，本示例性实施例中，吸光结构120的侧壁与底面之间的坡度角α可以大于90°且小于等于160°，例如可以为100°，110°，120°，130°，140°，150°，160°等。有关坡度角的含义可参见上述实施例的介绍，此处不再赘述。本示例性实施例通过将吸光结构120的坡度角设置为上述范围，一方面，与图30所示结构类似，可使得吸光结构120的宽度收缩从而占用较小的像素界定层PDL空间，如此而降低对于感光区200透光率的影响。另一方面，坡度角的增大，可以拓展吸光结构120的顶面宽度，从而提升对于传向第二电极层的横向漏光的覆盖角度。
如图30、图32和图34所示，在示例性实施例中，在驱动背板110的厚度方向上，吸光结构120可以贯穿像素界定层PDL，即吸光结构120的顶面与像素界定层PDL的顶面位于平行于驱动背板110的同一平面内。这里所述的某一结构的顶面可以理解为，该结构具有第一端面和第二端面，第一端面与驱动背板110接触，第二端面在驱动背板110的厚度方向上与第一端面相对，该第二端面即为该结构的顶面。通过将吸光结构120设置为贯穿像素界定层PDL，一方面，吸光结构120可以直接吸收残留在像素界定层PDL上的发光材料因为横向漏电而自发光的光线，另一方面，在驱动背板的厚度方向上吸光结构120可以在更大角度范围内阻挡横向漏光至第二电极层的光线，从而可以防止这部分光线经由第二电极层反射后传向光电传感器101，因此，通过将吸光结构120设置为贯穿像素界定层PDL，更有利于提升吸光结构120对于横向漏光的吸光效果。
当然，在本公开的其他实施例中，在驱动背板110的厚度方向上，吸光结构120也可以不贯穿像素界定层PDL，具体地，吸光结构120具有在驱动背板的厚度方向上相对设置的顶面和底面，吸光结构120的底面相比于顶面靠近驱动背板，例如，吸光结构120的底面可以位于驱动背板上和/或位于第一电极ANO上，并且像素界定层PDL覆盖吸光结构120的顶面。吸光结构120的顶面和底面之间可具有第一厚度，如上文所述，显示面板还可以包括第二电极层(第二电极层例如可以为阴极层)， 第二电极层位于像素界定层背离驱动背板的一侧，并且，至少部分像素界定层PDL的一侧接触第二电极层且另一侧接触驱动背板，像素界定层PDL在接触第二电极层的位置具有第二厚度，则第一厚度小于第二厚度。即吸光结构的高度要小于像素界定层PDL的厚度。
考虑到吸光结构120具有一定的壁厚，因此仅有极少部分光线能够被第二电极层反射至光电传感器101，因此，通过减小第一厚度与第二厚度的厚度差，例如第一厚度与第二厚度之比大于等于0.6，例如可以为0.6，0.7，0.8，0.9等，在吸光结构的顶部被像素界定层PDL覆盖的情况下，吸光结构120同样可以具有较好的吸光效果。
本公开还提供一种显示面板的制备方法，该制备方法可以用于制备本公开上述任意实施例所述的显示面板，该制备方法可以包括如下步骤：
S110、如图36所示，提供驱动背板100。其中，驱动背板100的具体结构此处不再赘述。
S120、如图37所示，在驱动背板100的一侧的至少部分区域形成多个吸光结构120，其中，吸光结构120的最小吸光波长小于等于与其对应的子像素的最小发光波长，且吸光结构120的最大吸光波长大于等于与其对应的子像素的最大发光波长。
如图37所示，在示例性实施例中，在形成吸光结构120前，还可以驱动背板100的一侧沉积有机材料而形成平坦化层PLN，然后再在平坦化层PLN上沉积金属材料形成第一电极层，再对第一电极层进行图案化而形成阵列分布的多个第一电极ANO，第一电极ANO可以为阳极。
在形成第一电极ANO后，可通过沉积工艺在感光区200沉积具有吸光介质的材料而形成吸光层，然后再通过曝光掩膜工艺对吸光层进行图案化而得到吸光结构120，吸光结构120可以围设于第一电极ANO的周围。有关吸光结构120的具体作用原理及其结构特征可参见上述实施例的介绍，此处不再赘述。
S130、如图38所示，在驱动背板100的一侧形成像素界定层PDL，可以通过沉积工艺沉积有机材料形成像素界定层PDL。
S140、利用构图工艺在像素界定层PDL形成像素开口，其中，吸光结构120围绕对应像素开口周向设置。
S150、如图39所示，利用蒸镀工艺在像素开口内形成发光功能层。有关发光功能层的形成过程，此处不再赘述。
在示例性实施例中，在形成发光功能层后，还可以进一步形成封装层，封装层可以包括第一无机封装层、有机封装层和第二无机封装层。然后再在封装层上形成触控层。
本公开还提供一种显示装置，该显示装置可以包括上述任意实施例所述的显示面板。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本公开的其它实施方案。本公开旨在涵盖本公开的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本公开的真正范围和精神由所附的权利要求指出。

Claims (25)

  1. 一种显示面板，其中，包括：
    驱动背板，所述驱动背板的一侧形成有出射不同颜色光线的多个子像素；
    像素界定层，位于所述驱动背板的一侧，所述像素界定层具有像素开口，所述像素开口内形成有所述子像素的发光功能层；
    多个吸光结构，与至少部分所述子像素对应设置，所述吸光结构位于所述像素界定层且围绕对应像素开口周向设置，所述吸光结构的最小吸光波长小于等于与其对应的子像素的最小发光波长，且所述吸光结构的最大吸光波长大于等于与其对应的子像素的最大发光波长。
  2. 根据权利要求1所述的显示面板，其中，所述显示面板具有感光区，所述感光区具有光电传感器；
    其中，所述吸光结构与所述感光区的至少部分子像素对应设置。
  3. 根据权利要求1所述的显示面板，其中，所述感光区包括R子像素、G子像素和B子像素，所述吸光结构包括第一吸光结构；
    所述第一吸光结构至少与部分所述G子像素对应设置，所述第一吸光结构的最小吸光波长小于等于所述G子像素的最小发光波长，且所述第一吸光结构的最大吸光波长大于等于所述G子像素的最大发光波长。
  4. 根据权利要求3所述的显示面板，其中，所述第一吸光结构的最小吸光波长还小于等于所述B子像素的最小发光波长，且所述第一吸光结构的最大吸光波长还大于等于所述B子像素的最大发光波长。
  5. 根据权利要求1所述的显示面板，其中，所述感光区包括R子像素、G子像素和B子像素，所述吸光结构包括第一吸光结构、第二吸光结构和第三吸光结构中的两个吸光结构；
    其中，所述第一吸光结构至少与部分所述G子像素对应设置，所述第二吸光结构至少与部分所述R子像素对应设置，所述第三吸光结构至少与部分所述B子像素对应设置。
  6. 根据权利要求1所述的显示面板，其中，所述感光区包括R子像素、G子像素和B子像素，所述吸光结构包括第一吸光结构、第二吸光结构和第三吸光结构；
    其中，所述第一吸光结构至少与部分所述G子像素对应设置，所述第二吸光结构至少与部分所述R子像素对应设置，所述第三吸光结构至少与部分所述B子像素对应设置。
  7. 根据权利要求3-6任一项所述的显示面板，其中，所述第一吸光结构、所述第二吸光结构和所述第三吸光结构的最小吸光波长相同、最大吸光波长也相同，且任意吸光结构的最小吸光波长大于等于所述B子像素的最小发光波长、最大吸光波长还大于等于所述B子像素的最大发光波长。
  8. 根据权利要求1所述的显示面板，其中，所述吸光结构的材料包括如下结构式(1)所示的化合物：
    或者，所述吸光结构的材料为黑色材料。
  9. 根据权利要求1所述的显示面板，其中，所述显示面板还包括：
    第一电极层，包括阵列分布的多个第一电极，所述像素界定层在所述第一电极处具有所述像素开口，所述发光功能层形成于所述第一电极背离所述驱动背板的一侧；
    其中，所述吸光结构在所述驱动背板的正投影与所述第一电极在所述驱动背板的正投影至少部分交叠。
  10. 根据权利要求1所述的显示面板，其中，所述显示面板还包括：
    第一电极层，包括阵列分布的多个第一电极，所述像素界定层在所述第一电极处具有所述像素开口，所述发光功能层形成于所述第一电极背离所述驱动背板的一侧；
    其中，所述吸光结构在所述驱动背板的正投影与所述第一电极在所述驱动背板的正投影不交叠。
  11. 根据权利要求1所述的显示面板，其中，所述显示面板还包括：
    第一电极层，包括阵列分布的多个第一电极，所述像素界定层在所述第一电极处具有所述像素开口，所述发光功能层形成于所述第一电极背离所述驱动背板的一侧；
    其中，所述吸光结构接触对应第一电极的侧壁。
  12. 根据权利要求1所述的显示面板，其中，所述显示面板还包括：
    第一电极层，包括阵列分布的多个第一电极，所述像素界定层在所述第一电极处具有所述像素开口，所述发光功能层形成于所述第一电极背离所述驱动背板的一侧；
    其中，所述吸光结构在所述驱动背板的正投影具有的最小宽度为第一宽度，所述吸光结构与对应第一电极之间具有间隙，且间隙宽度小于等于第一宽度。
  13. 根据权利要求12所述的显示面板，其中，所述间隙宽度与所述第一宽度之比大于0且小于等于1。
  14. 根据权利要求1所述的显示面板，其中，所述吸光结构在所述驱动背板的厚度方向上贯穿所述像素界定层。
  15. 根据权利要求1所述的显示面板，其中，所述吸光结构具有在所述驱动背板的厚度方向上相对设置的底面和顶面，所述底面位于所述顶面靠近所述驱动背板的一侧，所述像素界定层覆盖所述吸光结构的顶面。
  16. 根据权利要求15所述的显示面板，其中，所述显示面板还包括：
    第二电极层，位于所述像素界定层背离所述驱动背板的一侧，且至少部分所述像素界定层的一侧接触所述第二电极层且另一侧接触所述驱动背板；
    其中，在所述驱动背板的厚度方向上，所述吸光结构的顶面与底面之间具有第一厚度，所述像素界定层在接触所述第二电极层的位置具有第二厚度，所述第一厚度与第二厚度之比大于等于0.6。
  17. 根据权利要求1所述的显示面板，其中，所述吸光结构包括平行于所述驱动背板的第一结构层和第二结构层，所述第一结构层位于所述第二结构层远离所述驱动背板一侧的任意位置；
    其中，所述第一结构层在所述驱动背板的正投影位于所述第二结构在所述驱动背板的正投影内，或者，
    所述第一结构层在所述驱动背板的正投影与所述第二结构在所述驱动背板的正投影重叠。
  18. 根据权利要求1所述的显示面板，其中，所述吸光结构包括平行于所述驱动背板的第一结构层和第二结构层，所述第一结构层位于所述第二结构层远离所述驱动背板一侧的任意位置；
    其中，所述第二结构层在所述驱动背板的正投影位于所述第一结构层在所述驱动背板的正投影内。
  19. 根据权利要求17或18所述的显示面板，其中，所述吸光结构在所述驱动背板的正投影为圆环或正多边形环。
  20. 根据权利要求17或18所述的显示面板，其中，所述吸光结构在所述驱动背板的正投影具有的最小宽度为第一宽度，所述第一宽度大于等于0.5μm且小于等于2μm。
  21. 根据权利要求17所述的显示面板，其中，所述吸光结构的侧壁与底面形成的坡度角大于等于20°且小于等于90°。
  22. 根据权利要求18所述的显示面板，其中，所述吸光结构的侧壁与底面形成的坡度角大于90°且小于等于160°。
  23. 根据权利要求2所述的显示面板，其中，所述子像素至少包括在所述驱动背板的一侧层叠设置的第一发光单元和第二发光单元，所述第一发光单元通过电荷产生层串联；
    所述子像素具有发光阶段和非发光阶段，位于所述感光区的光电传感器具有感测阶段和非感测阶段，其中，所述光电传感器的感测阶段与所述子像素的发光阶段不交叠。
  24. 一种显示面板制备方法，其中，用于制备权利要求1-23任一项所述的显示面板，所述方法包括：
    提供驱动背板；
    在所述驱动背板的一侧的至少部分区域形成多个吸光结构，其中，所述吸光结构的最小吸光波长小于等于与其对应的子像素的最小发光波长，且所述吸光结构的最大吸光波长大于等于与其对应的子像素的最大 发光波长；
    在所述驱动背板的一侧形成像素界定层；
    利用构图工艺在所述像素界定层形成像素开口，其中，所述吸光结构围绕对应像素开口周向设置；
    利用蒸镀工艺在所述像素开口内形成发光功能层。
  25. 一种显示装置，其中，包括权利要求1-24任一项所述的显示面板。
PCT/CN2024/094630 2023-06-29 2024-05-22 一种显示面板及其制备方法、显示装置 Ceased WO2025001640A1 (zh)

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