WO2024255410A1 - 滤光微纳结构和滤波器阵列 - Google Patents

滤光微纳结构和滤波器阵列 Download PDF

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Publication number
WO2024255410A1
WO2024255410A1 PCT/CN2024/086977 CN2024086977W WO2024255410A1 WO 2024255410 A1 WO2024255410 A1 WO 2024255410A1 CN 2024086977 W CN2024086977 W CN 2024086977W WO 2024255410 A1 WO2024255410 A1 WO 2024255410A1
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Prior art keywords
micro
nano
filter
modulation layer
light
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PCT/CN2024/086977
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English (en)
French (fr)
Inventor
张佳豪
胡传真
贾昊
马强
朱镇峰
蔡宏
毛慧
浦世亮
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Hangzhou Hikvision Digital Technology Co Ltd
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Hangzhou Hikvision Digital Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B11/00—Filters or other obturators specially adapted for photographic purposes
    • G03B11/04—Hoods or caps for eliminating unwanted light from lenses, viewfinders or focusing aids

Definitions

  • the present application relates to the field of imaging technology, and in particular to a light filtering micro-nano structure and a filter array.
  • a color image sensor is formed by adding a dye-type three-primary color filter before the photosensitive unit array to form a Bayer color filter array, which is implemented based on the mixing principle of the three primary colors.
  • the main purpose of this application is to provide a light filtering micro-nano structure and a filter array, aiming to solve the technical problem of low imaging quality of the filter when facing low-illuminance scenes at night.
  • the present application proposes a light filtering micro-nano structure, comprising: a first micro-nano modulation layer, the first micro-nano modulation layer is used to be arranged on a transparent substrate of the filter, and the material of the first micro-nano modulation layer is one of a transparent material and a light loss material; the refractive index of the light loss material is higher than the refractive index of the transparent material; a second micro-nano modulation layer, the second micro-nano modulation layer is arranged on the side of the first micro-nano modulation layer away from the transparent substrate, and the material of the second micro-nano modulation layer is the other of a transparent material and a light loss material; a transparent protective layer, the transparent protective layer covers the first micro-nano modulation layer and the second micro-nano modulation layer, and is connected to the transparent substrate; wherein the refractive index of the transparent material is higher than the refractive index of the
  • the transparent material includes silicon nitride Si3N4 or titanium dioxide TiO2; and/or the optical loss material includes polycrystalline silicon P-Si, amorphous silicon ⁇ -Si or germanium Ge.
  • the first micro-nano modulation layer and the second micro-nano modulation layer are both constructed as columnar structures, and the cross-sectional shapes of the first micro-nano modulation layer and the second micro-nano modulation layer are both rotationally symmetrical figures with a rotation angle of 90°.
  • the thickness of the transparent substrate is greater than 3.5 ⁇ m.
  • the overall duty cycle of the first micro-nano modulation layer and the second micro-nano modulation layer is ⁇ , 0.2 ⁇ 0.8.
  • the thickness of the modulation layer made of the optical loss material is H2, and 10nm ⁇ H2 ⁇ 100nm.
  • the present application also provides a filter array, comprising: a regional array arranged in a corresponding position to the photosensitive unit array, and the regional array comprises a plurality of macro-pixel regions, each of the macro-pixel regions comprises at least one first filter, at least one second filter and at least one third filter, the first filter allows light of a first color to pass through, the second filter allows light of a second color to pass through, and the third filter allows light of a third color to pass through; wherein, at least one of the first filter, the second filter and the third filter comprises a first transparent substrate and a light filtering micro-nano structure array arranged on one side of the first transparent substrate, the light filtering micro-nano structure array comprises a plurality of light filtering micro-nano structures arranged in a rectangular array, and the light filtering micro-nano structure is constructed as the light filtering micro-nano structure provided in the first aspect.
  • the thickness of the modulation layer made of transparent material is greater than 300 mm; and in the light filtering micro-nano structure array, the spacing between the central axes of adjacent light filtering micro-nano structures is P, 100 nm ⁇ P ⁇ 600 nm.
  • the third filter is constructed as a visible light all-pass filter so that the light allowed to pass is white light;
  • the visible light all-pass filter includes a second transparent substrate and a second transparent protective layer, and the second transparent protective layer is arranged on the side of the second transparent substrate away from the photosensitive unit array.
  • the filter array includes 1 first filter, 1 second filter and 2 third filters, and the 1 first filter, 1 second filter and 2 third filters are arranged in a 2 ⁇ 2 array; wherein the first filter and the second filter have the light filtering micro-nano structure provided by the first aspect.
  • the side length of the first transparent substrate is less than or equal to 3 ⁇ m; wherein the cross-sectional width of the first micro-nano modulation layer and the second micro-nano modulation layer in the first filter is D1, D1 satisfies: 100 ⁇ D1 ⁇ 140nm, and the spacing between the central axes of adjacent filtering micro-nano structures is P1, P1 satisfies 200 ⁇ P1 ⁇ 300nm; the cross-sectional width of the first micro-nano modulation layer and the second micro-nano modulation layer in the second filter is D2, 160 ⁇ D2 ⁇ 200nm, and the spacing between the central axes of adjacent filtering micro-nano structures is P2, 350nm ⁇ P2 ⁇ 450nm.
  • At least one first filter and at least one second filter are arranged alternately in sequence; in the second diagonal direction of the macropixel area, at least two third filters are arranged in sequence; wherein the first diagonal direction and the second diagonal direction are parallel to or perpendicular to each other.
  • the filtering micro-nano structure constructs a double-layer modulation structure in the protective layer and the transparent substrate, and the single-layer modulation layer in the double-layer modulation structure is made of light loss material and transparent material respectively, so that the finally formed filtering micro-nano structure has the advantages of high transmittance and high color modulation of the above two materials at the same time, which not only improves the transmittance of the incident light, but also ensures that the filtering micro-nano structure still has a strong broadband spectral modulation capability for reconstructing colors under the small-size pixel arrangement of several wavelengths, thereby realizing color imaging function under low illumination.
  • FIG1 is a schematic structural diagram of an embodiment of a light filtering micro-nano structure of the present application.
  • FIG2 is a schematic cross-sectional view of a second micro-nano modulation layer of an embodiment of the light filtering micro-nano structure of the present application;
  • FIG3 is a schematic cross-sectional view of a second micro-nano modulation layer of another embodiment of the light filtering micro-nano structure of the present application;
  • FIG4 is a schematic structural diagram of another embodiment of the light filtering micro-nano structure of the present application.
  • FIG5 is a schematic diagram of filter arrangement according to an embodiment of a filter array of the present application.
  • FIG6 is a schematic diagram of a light filtering micro-nanostructure array of a filter in the filter array of the present application.
  • FIG7 is a schematic diagram of high transmittance broadband modulation curves of Examples 1 and 2;
  • FIG8 is a schematic diagram of a color image reconstructed using two high-transmittance broadband modulation curves of Example 1 and Example 2;
  • FIG9 is a schematic diagram of high transmittance broadband modulation curves of Examples 3 and 4;
  • FIG10 is a schematic diagram of high-transmittance broadband modulation curves of Examples 5 and 6.
  • connection can mean fixed connection, detachable connection, or integration; it can mean mechanical connection; It can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined.
  • fixation can mean fixed connection, detachable connection, or integration; it can mean mechanical connection; It can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined.
  • a color image sensor is formed by adding a dye-type three-primary color filter before the photosensitive unit array to form a Bayer color filter array, which is implemented based on the mixing principle of the three primary colors.
  • the luminous flux of the Bayer color filter array is only 1/3 of that of normal illumination scenes. Most of the light energy is absorbed by the dye of the filter, and the energy utilization rate is low.
  • the image quality is particularly degraded and the color distortion is serious.
  • the present application provides a solution, by designing the filtering micro-nano structure into a double-layer modulation structure composed of modulation layers made of light loss material and transparent material respectively, so that the double-layer modulation structure has both the high color modulation property of the light loss material, that is, the large difference in the peak and valley of the transmittance spectrum of the spectral modulation curve and the large modulation peak width, and the high transmittance characteristics of the transparent material, which not only improves the transmittance of the incident light, but also ensures that the filtering micro-nano structure still has a strong broadband spectral modulation capability under the small-size pixel arrangement of several wavelengths, thereby realizing color imaging function under low illumination, and still has a strong color reconstruction capability under small-size pixels.
  • This embodiment provides a light filtering micro-nano structure 20.
  • the light filtering micro-nano structure 20 is formed on a surface of the filter that is away from the photosensitive unit array, and is used to filter and modulate the incident light.
  • the light filtering micro-nano structure 20 includes a first micro-nano modulation layer 21 , a second micro-nano modulation layer 22 and a transparent protective layer 23 .
  • the first micro-nano modulation layer 21 is disposed on the transparent substrate 10 of the filter, and the material of the first micro-nano modulation layer 21 is one of a transparent material and an optical loss material; wherein the refractive index of the optical loss material is higher than the refractive index of the transparent material.
  • the second micro-nano modulation layer 22 is disposed on the side of the first micro-nano modulation layer 21 away from the transparent substrate 10, and the material of the second micro-nano modulation layer 22 is the other of a transparent material and a light loss material; the transparent protective layer 23 covers the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22, and is connected to the transparent substrate 10.
  • the refractive index of the transparent material in the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 is higher than the refractive index of the material of the transparent substrate 10 and the transparent protective layer 23.
  • the first micro-nano modulation layer 21 has a first orthographic projection on the transparent substrate 10
  • the second micro-nano modulation layer 22 has a second orthographic projection on the transparent substrate 10
  • the first orthographic projection and the second orthographic projection coincide with each other, that is, in this embodiment, the outer peripheral surfaces of the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 are coplanar and perpendicular to the transparent substrate 10, so as to facilitate the incident light to pass through the double-layer modulation structure and enter the transparent substrate 10.
  • the material of the first micro-nano modulation layer 21 is one of a transparent material and an optical loss material
  • the material of the second micro-nano modulation layer 22 is the other of a transparent material and an optical loss material. That is, when the material of the first micro-nano modulation layer 21 is a transparent material, the material of the second micro-nano modulation layer 22 is an optical loss material. Alternatively, when the material of the second micro-nano modulation layer 22 is a transparent material, the material of the first micro-nano modulation layer 21 is an optical loss material. It can be understood that in this embodiment, the high refractive index and low refractive index of the material are for the visible light band.
  • the refractive index of the transparent material is a, and a satisfies: 2 ⁇ a ⁇ 3.
  • the transparent material is a low refractive index transparent material in the visible light band
  • the refractive index of the optical loss material is b, and b satisfies: 3 ⁇ b ⁇ 5.
  • the optical loss material is a high refractive index optical loss material in the visible light band.
  • the transparent protective layer 23 is arranged on the side of the transparent substrate 10 away from the photosensitive unit array, and covers the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22.
  • the transparent protective layer 23 is formed by filling the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 with photoresist, and is used to protect the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22, and is used to flatten the filter surface, facilitating the preparation of other structural devices such as microlenses thereon.
  • the refractive index of the material of the transparent protective layer 23 is d, and d satisfies: 1.4 ⁇ d ⁇ 2.
  • the refractive index of the transparent material used in the modulation layer (the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22) is higher than that of the transparent substrate 10 and the transparent The refractive index of the material of the protective layer 23 .
  • the modulation layer made of a light loss material with a higher refractive index is used to increase the refractive index contrast between the micro-nano structure as a whole and the surrounding medium, such as the photoresist (transparent protective layer 23) and the filter substrate (transparent substrate 10), thereby improving the coupling strength between the incident light field of the micro-nano structure and the waveguide light field in the micro-nano structure, and enhancing the filtering and modulation capabilities of the micro-nano structure when the number is small.
  • the light loss of the light loss material will reduce the quality factor Q of the resonance in the transparent substrate 10, which is conducive to the accurate reconstruction of the subsequent color after broadband modulation.
  • the difference in refractive index between the two media decreases, the energy of the reflected light decreases and the energy of the transmitted light increases.
  • the refractive index of the transparent material used in the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 is higher than the refractive index of the transparent substrate 10 and the transparent protective layer 23, the difference in refractive index between adjacent media from the incident end to the transmission end of the light filtering micro-nano structure is small, compared with a micro-nano spectrum modulation structure with a high refractive index contrast made of a single high refractive index material, the transmittance of the incident light is improved.
  • the filter micro-nano structure 20 is designed to be a double-layer modulation layer structure formed by stacking modulation layers made of a light loss material with a higher refractive index and a transparent material with a lower refractive index.
  • the double-layer modulation layer structure has both the high color modulation property of the light loss material with a higher refractive index and the high transmittance property of the transparent material with a lower refractive index.
  • the filter micro-nano structure still has a strong broadband spectral modulation capability under a small-size pixel arrangement of several wavelengths, thereby realizing a color imaging function under low illumination, and can improve the overall broadband spectral modulation capability of the filter when the spectral modulation capability decreases due to a decrease in the refractive index contrast after the small-size pixel and the transparent protective layer 23, thereby ensuring that the filter still has a strong broadband spectral modulation capability for color reconstruction.
  • the filter micro-nano structure 20 provided in this embodiment does not need to additionally prepare a multi-layer coated filter, thereby reducing the manufacturing cost.
  • the transparent material used in the modulation layer includes silicon nitride Si 3 N 4 or titanium dioxide TiO 2. It can be understood that the refractive index of Si 3 N 4 or TiO 2 is higher than the refractive index of various glass materials or silicon dioxide SiO 2 used for filters.
  • the optical loss material used in the modulation layer includes polycrystalline silicon P-Si, amorphous silicon ⁇ -Si or germanium Ge.
  • the thickness of the modulation layer made of the optical loss material is H2, 10nm ⁇ H2 ⁇ 100nm, which can ensure that the micro-nano structure has a large light flux, such as greater than 60%, and enhance the broadband modulation capability of the filter under a small number of micro-nano structures, thereby avoiding a decrease in broadband modulation capability.
  • the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 are both constructed as columnar structures, and the cross-sectional shapes of the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 are both rotationally symmetrical figures with a rotation angle of 90°.
  • the double-layer modulation structure composed of the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 is constructed as a columnar structure protruding from the transparent substrate 10. And the central axis of the columnar structure is perpendicular to the surface of the transparent substrate 10.
  • the cross-section of any modulation layer in the double-layer modulation structure is the intersection area of the plane parallel to the plane where the transparent substrate 10 is located and the modulation layer.
  • the cross-sectional shape of the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 are both rotationally symmetric figures with a rotation angle of 90° to ensure the polarization-independent characteristics of the spectral modulation, thereby maintaining the high transmittance of the micro-nano structure.
  • the rotationally symmetric image with a rotation angle of 90° can be circular, square, annular, etc.
  • the thickness of the transparent substrate 10 is H1, and H1>5 ⁇ .
  • ⁇ is the average wavelength of the visible light band, and in this case, the broadband modulation interference caused by the Fabry-Peror resonance in the transparent substrate 10 can be reduced.
  • the overall duty cycle of the double-layer modulation structure composed of the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 is ⁇ , 0.2 ⁇ 0.8, so as to ensure that the double-layer modulation structure is easy to be etched and prepared by ICP (inductively coupled plasma) etching technology, etc.
  • the overall duty cycle is the ratio of the cross-sectional width of the columnar structure to the total layer height of the double-layer modulation structure.
  • H3 is the thickness of the modulation layer made of transparent material.
  • the cross-sectional width D is the cross-sectional diameter of the columnar structure, for example, see FIG2.
  • the cross-sectional width D is the cross-sectional side length of the columnar structure, for example, see FIG3.
  • the present application provides a filter array
  • the filter array includes a regional array arranged in a position corresponding to the photosensitive unit array, and the regional array includes a plurality of macro-pixel areas, each macro-pixel area includes at least one first filter 100, at least one second filter 200 and at least one third filter 300, the first filter 100 allows light of a first color to pass through, the second filter 200 allows light of a second color to pass through, and the third filter 300 allows light of a third color to pass through.
  • At least one of the first filter 100, the second filter 200 and the third filter 300 comprises a first transparent substrate and a light filtering micro-nano structure array disposed on one side of the first transparent substrate, each light filtering micro-nano structure array comprises a plurality of light filtering micro-nano structures 20 arranged in a rectangular array, and each light filtering micro-nano structure 20 is constructed as described in the above embodiment.
  • the filtering micro-nano structure 20 provided in the example.
  • the specific structure of the light filtering micro-nano structure 20 refers to the above embodiment. Since the filter array adopts the technical solution of the above embodiment, it at least has all the beneficial effects brought by the technical solution of the above embodiment, which will not be described one by one here.
  • the filter array includes a transparent medium layer facing all the photosensitive units, and the transparent medium layer is divided into a plurality of block-shaped transparent substrates 10 by a sub-region array. At this time, each transparent substrate 10 forms a filter in combination with a plurality of filter structures arranged thereon.
  • the space on one side of the transparent substrate 10 away from the photosensitive unit may not be provided with the filter micro-nano structure 20, so that this part of the filter substantially allows all light in the visible light band to pass through, that is, allows white light to pass through, to form a visible light all-pass filter.
  • the filter micro-nano structure array has a corresponding spectral modulation capability, that is, it allows light of some light bands to pass through, while the rest of the light bands are not allowed to pass through. That is, it allows light of one color to pass through.
  • the thickness of the modulation layer made of transparent material is H3, H3>300mm; and in the light filtering micro-nano structure array, the spacing between the central axes of adjacent light filtering micro-nano structures 20 is P, 100nm ⁇ P ⁇ 600nm.
  • the spacing P is the arrangement period of the light filtering micro-nano structures in the light filtering micro-nano structure array.
  • H3>300mm It can ensure that the optical waveguide structure equivalent to the filtering micro-nanostructure array can provide several intrinsic waveguide modes. Combined with 100nm ⁇ P ⁇ 600nm, the incident light will pass through the wave vector matching principle of the periodic structure to excite these intrinsic waveguide modes and achieve the purpose of spectral modulation.
  • the third filter 300 is configured as a visible light all-pass filter so that the light allowed to pass is white light.
  • the visible light all-pass filter only includes a second transparent substrate and a second transparent protective layer, and the second transparent protective layer is arranged on the side of the second transparent substrate away from the photosensitive unit array.
  • the second transparent substrate is a transparent substrate 10 in the transparent medium layer corresponding to the sub-region without micro-nano structures in the filter array.
  • the filter provided in at least one sub-region in the macro-pixel region is the third filter 300. It is understandable that the visible light all-pass filter approximates the all-pass light energy, which can further improve the overall light throughput of the filter array.
  • the macro-pixel area includes one first filter 100, one second filter 200 and two third filters 300, and one first filter 100, one second filter 200 and two third filters 300 are arranged in a 2 ⁇ 2 array; wherein the first filter 100 and the second filter 200 have the light filtering micro-nano structure provided in the aforementioned embodiment.
  • the first filter 100 and the second filter 200 allow light of different colors to pass through, that is, the first filter 100 and the second filter 200 have different light filtering micro-nano structures.
  • the two filters with different light filtering micro-nano structures are combined with two third filters to form a 2 ⁇ 2 array macro pixel.
  • the side length of the first transparent substrate is e, and e satisfies: e ⁇ 3 ⁇ m.
  • the side length of the first transparent substrate is less than or equal to 3 ⁇ m, so that the filter micro-nano structure array is distributed in a 3 ⁇ m ⁇ 3 ⁇ m area, that is, in this embodiment, the side length of each filter corresponds to the side length of the small-size pixel.
  • the cross-sectional width of the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 is D1, and D1 satisfies: 100nm ⁇ D1 ⁇ 140nm.
  • the spacing between the central axes of adjacent light filtering micro-nano structures is P1, and P1 satisfies 200nm ⁇ P1 ⁇ 300nm.
  • the double-layer modulation structure composed of the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 is a columnar structure, and the cross-sectional shape is a rotationally symmetrical figure with a rotation angle of 90°. Therefore, when the cross-sectional shape of the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 in the first filter 100 is circular, the cross-sectional width D1 is the cross-sectional diameter of the columnar structure.
  • the cross-sectional width D1 is the cross-sectional side length of the columnar structure
  • the spacing P1 is the arrangement period of the light filtering micro-nano structures in the light filtering micro-nano structure array.
  • the cross-sectional widths of the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 are D2, 160 ⁇ D2 ⁇ 200nm, and the spacing between the central axes of adjacent filtering micro-nano structures is P2, 350nm ⁇ P2 ⁇ 450nm.
  • the cross-sectional width D2 is the cross-sectional diameter of the columnar structure.
  • the cross-sectional width D2 is the cross-sectional side length of the columnar structure.
  • the spacing P2 is the arrangement period of the filter micro-nano structure in the filter micro-nano structure array.
  • the combination of the arrangement period and shape size parameters provided in this embodiment has a better effect, which can enable the filter array to still have the broadband modulation function of accurately reconstructing colors under low illumination with small-sized pixels.
  • At least one first filter 100 and at least one second filter 200 are arranged alternately in sequence; in the second diagonal direction of the macro pixel area, at least two third filters 300 are arranged in sequence.
  • the first diagonal direction and the second diagonal direction are parallel to each other or perpendicular to each other.
  • the first filter 100 is located in the sub-area in the upper left corner
  • the second filter 200 is located in the sub-area in the lower right corner
  • the two third filters 300 are located in the sub-areas in the upper right corner and the lower left corner, respectively.
  • the first diagonal direction is from the upper left to the lower right direction
  • the second diagonal direction is from the upper right to the lower left direction
  • the two are perpendicular to each other.
  • one of the first filter 100 and the second filter 200, or both have the light filtering micro-nano structure 20 provided in the aforementioned embodiment.
  • the first filter 100 and the second filter 200 both have the light filtering micro-nano structure 20 provided in the above embodiment, and the third filter 300 is a visible light all-pass filter.
  • the high transmittance broadband modulation curve of the first filter 100 is M1
  • the high transmittance broadband modulation curve of the second filter 200 is M2
  • the energy value received by the third filter 300 is approximately the same value in all spectrum bands, which can be expressed as C.
  • All the light filtering micro-nano structures 20 in the first filter 100 and the second filter 200 provide n spectral modulation channels in total.
  • the light energy values of the three colors I 1 , I 2 , and I 3 received by the macro pixel area are expressed as:
  • A is the modulation matrix composed of broadband modulation curves M 1 , M 2 and C
  • ⁇ ( ⁇ n ) is the incident spectrum of the nth spectral modulation channel.
  • the compressed sensing algorithm requires that the correlation between the high transmittance broadband modulation curve M1 and the high transmittance broadband modulation curve M2 is small, and as close as possible to the linear combination of the R, G, B curves, that is, at this time, M1 and M2 satisfy: min
  • 2 , i 1,2.
  • a, b, c are constants.
  • the minimum normalized singular value of the modulation matrix A composed of M1 , M2 and C should generally be greater than 0.05, where SVD(A) is the singular value decomposition (Single Value Decomposition) of the modulation matrix A.
  • first filter 100 and the second filter 200 allow different colors of light to pass through, that is, the specific structures of the filtering micro-nanostructure arrays in the first filter 100 and the second filter 200 are different, which may specifically include at least one of the following: the shape of a single micro-nanostructure is different, the spacing between adjacent micro-nanostructures is different, or the number of micro-nanostructures is different.
  • the transparent substrate 10 is made of silicon dioxide SiO 2
  • the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 are both constructed as columnar structures with circular cross-sections.
  • the first micro-nano modulation layer 21 is made of amorphous Si ( ⁇ -Si), a light loss material
  • the second micro-nano modulation layer 22 is made of transparent titanium dioxide TiO 2. It can be understood that the refractive index of TiO 2 is greater than that of SiO 2 .
  • the height of the second micro-nano modulation layer 22 is in the range of 200-1000 nm, and the central axis of the adjacent filter micro-nano structure 20
  • the spacing between the lines is between 200-500nm to ensure that there are several waveguide modes for modulation in the double-layer modulation structure.
  • the spacing varies according to the specific structure and material of the filter micro-nano structure.
  • the height of the first micro-nano modulation layer 21 is between 20-100nm.
  • the overall duty cycle of the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 is between 0.2-0.8 to ensure that the structure is easy to etch and prepare.
  • Example 1 The height of the first micro-nano modulation layer 21 ( ⁇ -Si) is 62.8 nm, the height of the second micro-nano modulation layer 22 (TiO 2 ) is 465.4 nm, the spacing is 265.2 nm, and the duty cycle is 0.31;
  • Example 2 The height of the first micro-nano modulation layer 21 ( ⁇ -Si) is 62.8 nm, the height of the second micro-nano modulation layer 22 (TiO 2 ) is 465.4 nm, the spacing is 377.3 nm, and the duty cycle is 0.57.
  • the first filter 100 is formed by the light filtering micro-nano structure 20 provided in Example 1
  • the second filter 200 is formed by the light filtering micro-nano structure 20 provided in Example 2.
  • the first filter 100 is located in the sub-area at the upper left corner
  • the second filter 200 is located in the sub-area at the lower right corner
  • two third filters 300 that allow white light to pass are respectively located in the sub-areas at the upper right corner and the lower left corner.
  • Figure 7 is the high transmittance broadband modulation curve of Example 1 and Example 2. It can be seen that the average transmittance of the broadband modulation curves of Example 1 and Example 2 reaches 75.4% and 68.6% respectively.
  • Figure 8 The image on the left of Figure 8 is the reference image, and the reference image is the true value image; the image on the right of Figure 8 is a color image reconstructed using the high transmittance broadband modulation curves of Example 1 and Example 2.
  • the color accuracy of the color image is measured by the color difference quantification index ⁇ E (delta-E) in the CIELAB color space.
  • the average value of the color deviation ⁇ E of the color image is as low as 0.87, which shows that the filter array of Example 1 and Example 2 accurately reconstructs the image color.
  • the transparent substrate 10 is made of SiO2
  • the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 are both constructed as columnar structures with circular cross-sections.
  • the first micro-nano modulation layer 21 is made of transparent material silicon nitride Si3N4, and the second micro-nano modulation layer 22 is made of light loss material polycrystalline Si (p-Si).
  • the height of the first micro-nano modulation layer 21 is between 200-1500nm, and the spacing P is between 200-500nm to ensure that there are several waveguide modes for modulation in the double-layer modulation structure.
  • the height of the second micro-nano modulation layer 22 is between 30-200nm.
  • the overall duty ratio of the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 is between 0.2-0.8 to ensure that the structure is easy to etch and prepare.
  • Example 3 The height of the first micro-nano modulation layer 21 (Si 3 N 4 ) is 431.3 nm, and the height of the second micro-nano modulation layer 22 (p-Si) is The height is 76.5nm, the spacing is 269.2nm, and the duty cycle is 0.44;
  • Example 4 The height of the first micro-nano modulation layer 21 (Si 3 N 4 ) is 431.3 nm, the height of the second micro-nano modulation layer 22 (p-Si) is 76.5 nm, the spacing is 347.9 nm, and the duty cycle is 0.54.
  • the first filter 100 is formed by the light filtering micro-nano structure 20 provided in Example 3, and the second filter 200 is formed by the light filtering micro-nano structure 20 provided in Example 4.
  • the first filter 100 is located in the sub-area at the upper left corner
  • the second filter 200 is located in the sub-area at the lower right corner
  • two third filters 300 that allow white light to pass are respectively located in the sub-areas at the upper right corner and the lower left corner.
  • FIG. 9 is a high transmittance broadband modulation curve of Example 3 and Example 4. It can be seen that the average transmittance of the broadband modulation curve of Example 3 and Example 4 reaches 65.7% and 72.7% respectively.
  • the average value of the color deviation ⁇ E of the reconstructed color image is as low as 1.13, which shows that the filter arrays of Examples 3 and 4 accurately reconstruct the image color.
  • the transparent substrate 10 is made of SiO2
  • the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 are both constructed as columnar structures with square cross-sections.
  • the first micro-nano modulation layer 21 is made of light loss material polycrystalline Si (p-Si)
  • the second micro-nano modulation layer 22 is made of transparent material titanium dioxide TiO2 .
  • the height of the first micro-nano modulation layer 21 is between 20-100nm, and the spacing P is between 200-500nm to ensure that there are several waveguide modes for modulation in the double-layer modulation structure.
  • the height of the second micro-nano modulation layer 22 is between 200-1000nm.
  • the overall duty ratio of the first micro-nano modulation layer 21 and the second micro-nano modulation layer 22 is between 0.2-0.8 to ensure that the structure is easy to etch and prepare.
  • Example 5 The height of the first micro-nano modulation layer 21 (p-Si) is 83.6 nm, the height of the second micro-nano modulation layer 22 (TiO 2 ) is 313.2 nm, the spacing is 379.7 nm, and the duty cycle is 0.41;
  • Example 6 The height of the first micro-nano modulation layer 21 (p-Si) is 83.6 nm, the height of the second micro-nano modulation layer 22 (TiO 2 ) is 313.2 nm, the spacing is 271.6 nm, and the duty cycle is 0.62.
  • the first filter 100 is formed by the light filtering micro-nano structure 20 provided in Example 5, and the second filter 200 is formed by the light filtering micro-nano structure 20 provided in Example 6.
  • the first filter 100 is located in the sub-region in the upper left corner
  • the second filter 200 is located in the sub-region in the lower right corner
  • two third filters 300 that allow white light to pass are respectively located in the sub-regions in the upper right corner and the lower left corner.
  • FIG 10 is a high transmittance broadband modulation curve of Example 5 and Example 6. It can be seen that the average transmittance of the broadband modulation curve of Example 5 and Example 6 reaches 77.9% and 63.8% respectively.
  • the color deviation ⁇ E of the reconstructed color image The average value is as low as 1.21, which shows that the filter arrays of Examples 5 and 6 accurately reconstruct the image colors.

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Abstract

一种滤光微纳结构（20）和滤波器阵列。其中滤光微纳结构（20）包括：第一微纳调制层（21），用于设置于滤波器的透明基底（10），且第一微纳调制层（21）的材质为透明材料和光损耗材料中的一者；第二微纳调制层（22），设置于第一微纳调制层（21）的背离透明基底（10）的一侧，第二微纳调制层（22）的材质为透明材料和光损耗材料中的另一者；透明保护层（23），包覆第一微纳调制层（21）和第二微纳调制层（22），并与透明基底（10）连接；其中，透明材料的折射率高于透明基底（10）和透明保护层（23）的材料的折射率。具有这种滤光微纳结构（20）的滤波器阵列可在小尺寸像元下用于彩色成像的宽带滤波，同时提高入射光的透过率，从而实现低照度下的彩色成像功能。

Description

滤光微纳结构和滤波器阵列 技术领域
本申请涉及成像技术领域，特别涉及一种滤光微纳结构和滤波器阵列。
背景技术
相关技术中，彩色图像传感器是在感光单元阵列之前通过添加染料型三原色滤光片形成拜耳式彩色滤光阵列，根据三原色的混合原理实现。
发明内容
本申请的主要目的是提供一种滤光微纳结构和滤波器阵列，旨在解决滤波器在面对夜晚的低照度场景时成像质量较低的技术问题。
为实现上述目的，本申请提出的一种滤光微纳结构，包括：第一微纳调制层，第一微纳调制层用于设置于滤波器的透明基底，且第一微纳调制层的材质为透明材料和光损耗材料中的一者；光损耗材料的折射率高于透明材料的折射率；第二微纳调制层，第二微纳调制层设置于第一微纳调制层的背离透明基底的一侧，第二微纳调制层的材质为透明材料和光损耗材料中的另一者；透明保护层，透明保护层包覆第一微纳调制层和第二微纳调制层，并与透明基底连接；其中，透明材料的折射率高于透明基底和透明保护层的材料的折射率。
在本申请实施例中，透明材料包括氮化硅Si3N4或者二氧化钛TiO2；和/或光损耗材料包括多晶硅P-Si、非晶硅α-Si或者锗Ge。
在本申请实施例中，第一微纳调制层和第二微纳调制层均构造为柱状结构，且第一微纳调制层和第二微纳调制层的横截面形状均为旋转角为90°的旋转对称图形。
在本申请实施例中，透明基底的厚度大于3.5μm。
在本申请实施例中，第一微纳调制层和第二微纳调制层的整体占空比为η，0.2≤η≤0.8。
在本申请实施例中，第一微纳调制层和第二微纳调制层中，材质为光损耗材料的调制层的层厚为H2，10nm≤H2≤100nm。
第二方面，本申请还提供了一种滤波器阵列，包括：和感光单元阵列在位置上对应设置的区域阵列，且区域阵列包括多个宏像素区域，每个所述宏像素区域包括至少一个第一滤波器、至少一个第二滤波器和至少一个第三滤波器，第一滤波器允许第一颜色的光线通过，第二滤波器允许第二颜色的光线通过，第三滤波器允许第三颜色的光线通过；其中，第一滤波器、所述第二滤波器和第三滤波器中的至少一者包括第一透明基底以及设置于第一透明基底一侧的滤光微纳结构阵列，滤光微纳结构阵列包括呈矩形阵列排布的多个滤光微纳结构，且滤光微纳结构构造为如第一方面提供的滤光微纳结构。
在本申请实施例中，滤光微纳结构中，材质为透明材料的调制层的层厚大于300mm；且在滤光微纳结构阵列中，相邻滤光微纳结构的中心轴线之间的间距为P，100nm≤P≤600nm。
在本申请实施例中，第三滤波器构造为可见光全通滤波器，以使允许通过的光线为白色光线；可见光全通滤波器包括第二透明基底和第二透明保护层，第二透明保护层设置于第二透明基底的背离感光单元阵列的一侧。
在本申请实施例中，所述滤波器阵列包括1个第一滤波器、1个第二滤波器和2个第三滤波器，且1个第一滤波器、1个第二滤波器和2个第三滤波器呈2×2阵列排布；其中，第一滤波器和第二滤波器具有第一方面提供的滤光微纳结构。
在本申请实施例中，第一透明基底的边长小于或等于3μm；其中，第一滤波器中的第一微纳调制层和第二微纳调制层的横截面宽度为D1，D1满足：100＜D1＜140nm，相邻滤光微纳结构的中心轴线之间的间距为P1，P1满足200＜P1＜300nm；第二滤波器中的第一微纳调制层和第二微纳调制层的横截面宽度为D2，160＜D2＜200nm，相邻滤光微纳结构的中心轴线之间的间距为P2，350nm＜P2＜450nm。
在本申请实施例中，在宏像素区域的第一对角线方向上，至少一个第一滤波器和至少一个第二滤波器依次交替排列；在宏像素区域的第二对角线方向上，至少两个第三滤波器依次排列；其中，第一对角线方向和第二对角线方向相互平行或者相互垂直。
本申请技术方案提供的滤光微纳结构在保护层和透明基底中构造了一种双层调制结构，该双层调制结构中的单层调制层分别使用光损耗材料和透明材料制成，从而使得最终形成的滤光微纳结构同时具有前述两种材料的高透过率和高色彩调制性优势，不仅提高了入射光的透过率，还确保了滤光微纳结构在数个波长的小尺寸像素排布下，仍然具有用于重建色彩的较强的宽带光谱调制能力，进而可实现低照度下的彩色成像功能。
附图说明
为了更清楚地说明本申请实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。
图1为本申请滤光微纳结构一实施例的结构示意图；
图2为本申请滤光微纳结构一实施例的第二微纳调制层的横截面示意图；
图3为本申请滤光微纳结构另一实施例的第二微纳调制层的横截面示意图；
图4为本申请滤光微纳结构又一实施例的结构示意图；
图5为本申请滤波器阵列一实施例的滤波器布置示意图；
图6为本申请滤波器阵列中一滤波器的滤光微纳结构阵列示意图；
图7为示例1和示例2的高透过率宽带调制曲线示意图；
图8为利用示例1和示例2的两条高透过率宽带调制曲线重建出的彩色图像示意图；
图9为示例3和示例4的高透过率宽带调制曲线示意图；
图10为示例5和示例6的高透过率宽带调制曲线示意图。
本申请目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
需要说明，本申请实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
在本申请中，除非另有明确的规定和限定，术语“连接”、“固定”等应做广义理解，例如，“固定”可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连 接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
另外，若本申请实施例中有涉及“第一”、“第二”等的描述，则该“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外，全文中出现的“和/或”的含义，包括三个并列的方案，以“A和/或B”为例，包括A方案、或B方案、或A和B同时满足的方案。另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本申请要求的保护范围之内。
相关技术中，彩色图像传感器是在感光单元阵列之前通过添加染料型三原色滤光片形成拜耳式彩色滤光阵列，根据三原色的混合原理实现。
然而拜耳式彩色滤光阵列在面对夜晚的低照度场景，其光通量仅为正常照度场景的1/3，大部分光能被滤光片的染料吸收，能量利用率低。在面对夜晚的低照度场景，尤其是使用于小尺寸像元成像装置时，成像质量下降尤为明显，色彩失真严重。
为此，本申请提供了一种解决方案，通过将滤光微纳结构设计成分别由光损耗材料与透明材料制成的调制层叠合而成的双层调制结构，从而通过双层调制结构同时兼具光损耗材料的高色彩调制性，即光谱调制曲线的透过率谱峰谷差异大和调制峰宽大，与透明材料的高透过率特性，不仅提高了入射光的透过率，还确保了滤光微纳结构在数个波长的小尺寸像素排布下，仍然具有较强的宽带光谱调制能力，进而可实现低照度下的彩色成像功能，并可在小尺寸像元下，仍具有较强色彩重建能力。
下面结合一些具体实施例进一步阐述本申请的发明构思。
本实施例提出一种滤光微纳结构20。该滤光微纳结构20形成于滤光片的背离感光单元阵列的一侧表面，用于对入射光进行滤波调制。
本实施例中，滤光微纳结构20包括第一微纳调制层21、第二微纳调制层22和透明保护层23。
其中，第一微纳调制层21设置于滤波器的透明基底10上，且第一微纳调制层21的材质为透明材料和光损耗材料中的一者；其中，光损耗材料的折射率高于透明材料的折 射率；第二微纳调制层22设置于第一微纳调制层21的背离透明基底10的一侧，且第二微纳调制层22的材质为透明材料和光损耗材料中的另一者；透明保护层23包覆第一微纳调制层21和第二微纳调制层22，并与透明基底10连接。第一微纳调制层21和第二微纳调制层22中的透明材料的折射率高于透明基底10和透明保护层23的材料的折射率。
具体而言，请参阅图1，透明基底10为滤波器的主体部分，其由对应光波段的透明材料制成，其中，透明基底10的材料的折射率为c，c满足：1.4＜c＜2，例如各种用于滤波器的玻璃材料或者二氧化硅SiO2等。可以理解的，透明基底10允许可见光波段的所有光线通过。透明基底10和感光单元阵列彼此相对布置，以使经过滤波器滤波调制后的光信号被对应的感光单元阵列接收，以输出检测信号。在透明基底10的背离感光单元阵列的一侧表面设置有第一微纳调制层21，而第一微纳调制层21的背离透明基底10的一侧表面设置有第二微纳调制层22。
其中，第一微纳调制层21具有在透明基底10上的第一正投影，第二微纳调制层22具有在透明基底10上的第二正投影，第一正投影和第二正投影彼此重合，也即是本实施例中，第一微纳调制层21和第二微纳调制层22的外周面共面且均垂直于透明基底10，以利于入射光穿过该双层调制结构并进入到透明基底10。
值得一提的是，第一微纳调制层21的材质为透明材料和光损耗材料中的一者，且第二微纳调制层22的材质为透明材料和光损耗材料中的另一者。也即是，当第一微纳调制层21的材质为透明材料时，第二微纳调制层22的材质为光损耗材料。或者，当第二微纳调制层22的材质为透明材料时，第一微纳调制层21的材质为光损耗材料。可以理解的，本实施例中，材料的高折射率和低折射率是针对可见光波段而言。具体的，透明材料的折射率为a，a满足：2＜a＜3，此时，透明材料为可见光波段的低折射率透明材料，光损耗材料的折射率为b，b满足：3＜b＜5，此时，光损耗材料为可见光波段的高折射率光损耗材料。
透明保护层23设置于透明基底10的背离感光单元阵列的一侧，且包覆第一微纳调制层21和第二微纳调制层22。可选的，透明保护层23由在第一微纳调制层21和第二微纳调制层22的周围填充的光刻胶形成，用于对第一微纳调制层21和第二微纳调制层22进行保护，并用于平坦滤波器表面，为在其上制备微透镜等其他结构器件提供便利。其中，透明保护层23的材料的折射率为d，d满足：1.4＜d＜2。如此，调制层(第一微纳调制层21和第二微纳调制层22)中使用的透明材料的折射率高于透明基底10和透明 保护层23的材料的折射率。
本实施例中，由折射率较高的光损耗材料制成的调制层用于增加微纳结构整体与周围介质，如光刻胶(透明保护层23)和滤波基底(透明基底10)之间的折射率对比度，从而提高微纳结构的入射光场和微纳结构内波导光场的耦合强度，增强微纳结构在数量较少时的滤波调制能力。此外，光损耗材料的光损耗将使得透明基底10内共振的品质因子Q下降，从而利于宽带调制后，后续颜色的准确重建。
可以理解的，当光从一种介质进入另一种介质时，如果两种介质的折射率相差减小，反射光的能量减小，透射光的能量增加。本实施例中，由于第一微纳调制层21和第二微纳调制层22中使用的透明材料的折射率高于透明基底10和透明保护层23的折射率，从而使得从滤光微纳结构的入射端至透射端，相邻介质之间的折射率相差较小，相较于单一地使用高折射率材料做成高折射率对比度的微纳光谱调制结构，提高了入射光的透过率。
本实施例将滤光微纳结构20设计成分别由折射率较高的光损耗材料与折射率较低的透明材料制成的调制层叠合而成的双层调制层结构，该双层调制层结构同时兼具折射率较高的光损耗材料的高色彩调制性与折射率较低的透明材料的高透过率特性，不仅提高了入射光的透过率，还确保了滤光微纳结构在数个波长的小尺寸像素排布下，仍然具有较强的宽带光谱调制能力，进而可实现低照度下的彩色成像功能，并可在小尺寸像元且具有透明保护层23后折射率对比度下降所导致的光谱调制能力下降的情况下，提高滤波器整体的宽带光谱调制能力，确保滤波器仍具有较强的用于色彩重建的宽带光谱调制能力。
此外，相较于补色滤光片阵列，本实施例提供的滤光微纳结构20无需额外制备多层镀膜滤光片，从而可以降低制造成本。
在本申请实施例中，调制层中使用的透明材料包括氮化硅Si3N4或者二氧化钛TiO2。可以理解的，Si3N4或者TiO2的折射率均高于各种用于滤波器的玻璃材料或者二氧化硅SiO2的折射率。
在本申请实施例中，调制层中使用的光损耗材料包括多晶硅P-Si、非晶硅α-Si或者锗Ge。此时，第一微纳调制层21和第二微纳调制层22中，材质为光损耗材料的调制层的层厚为H2，10nm≤H2≤100nm，此时可确保微纳结构具有较大的光通量，如大于60％，并增强滤波器在微纳结构少量排布下的宽带调制能力，避免宽带调制能力下降。
在本申请实施例中，第一微纳调制层21和第二微纳调制层22均构造为柱状结构，且第一微纳调制层21和第二微纳调制层22的横截面形状均为旋转角为90°的旋转对称图形。
具体的，第一微纳调制层21和第二微纳调制层22组成的双层调制结构构造为凸出于透明基底10的柱状结构。且该柱状结构的中心轴线垂直于透明基底10的表面。双层调制结构中任一调制层的横截面为与透明基底10所在平面相平行的平面和该调制层的交集区域。本实施例中，第一微纳调制层21和第二微纳调制层22的横截面形状均为旋转角为90°的旋转对称图形，以确保光谱调制的偏振无关特征，从而维持微纳结构的高透过率。如，请参阅图2和图3，旋转角为90°的旋转对称图像可以为圆形、正方形、圆环形等。
在本申请实施例中，请参阅图1，透明基底10的厚度为H1，H1＞5λ。λ为可见光波段的平均波长，此时，可减小透明基底10中Fabry-Peror共振所带来的宽带调制干扰。
在本申请实施例中，第一微纳调制层21和第二微纳调制层22构成的双层调制结构的整体占空比为η，0.2≤η≤0.8，以确保该双层调制结构便于通过ICP(inductively coupled plasma，感性耦合等离子体)刻蚀技术等进行刻蚀制备。其中，整体占空比为柱状结构的横截面宽度和双层调制结构的总层高的比值。
具体的，柱状结构的横截面宽度为D，则η＝D/(H2+H3)。其中，H3为材质为透明材料的调制层的层厚。当第一微纳调制层和第二微纳调制层的横截面形状为圆形时，横截面宽度D为柱状结构的横截面直径，例如参见图2。当第一微纳调制层和第二微纳调制层的横截面形状为方形时，横截面宽度D为柱状结构的横截面边长尺寸，例如参见图3。
第二方面，请参阅图5，本申请提供了一种滤波器阵列，滤波器阵列包括和感光单元阵列在位置上对应设置的区域阵列，且区域阵列包括多个宏像素区域，每个宏像素区域包括至少一个第一滤波器100、至少一个第二滤波器200和至少一个第三滤波器300，第一滤波器100允许第一颜色的光线通过，第二滤波器200允许第二颜色的光线通过，第三滤波器300允许第三颜色的光线通过。
其中，第一滤波器100、第二滤波器200和第三滤波器300中的至少一者包括第一透明基底以及设置于第一透明基底一侧的滤光微纳结构阵列，每个滤光微纳结构阵列包括呈矩形阵列排布的多个滤光微纳结构20，且每个滤光微纳结构20构造为如前述实施 例提供的滤光微纳结构20。
该滤光微纳结构20的具体结构参照上述实施例，由于本滤波器阵列采用了上述实施例的技术方案，因此至少具有上述实施例的技术方案所带来的所有有益效果，在此不再一一赘述。
此外，本实施例中，滤波器阵列构造成和感光单元阵列在位置上对应设置的区域阵列，此时，区域阵列中每个子区域和单个像素一一对应。而在一个区域阵列中，该区域阵列内的子区域组合构成一宏像素区域。在颜色重建时，以宏像素区域为对象，可根据宏像素区域内每个子区域对应的感光单元输出的光能量进行宏像素区域的颜色重建。其中，宏像素区域包括呈方阵排布的至少4个子区域，也即是宏像素可以为2×2、3×3或者4×4等的子区域方阵。
可以理解的，请参阅图5，滤波器阵列包括和全部感光单元正对的透明介质层，通过子区域阵列将透明介质层进行分割成多个块状的透明基底10，此时每个透明基底10结合其上设置的多个滤光结构形成一个滤波器。
其中，多个滤光结构可以构造为滤光微纳结构阵列，且该滤光微纳结构阵列中的每个滤光微纳结构20构造为前述实施例提供的滤光微纳结构20，或者该滤光微纳结构还可以是常用的滤光结构，本实施例对此并不限制，只要其中至少一种颜色对应的滤波器具有前述实施例提供的滤光微纳结构20即可。
当然，透明基底10的背离感光单元的一侧空间还可不设置有滤光微纳结构20，从而该部分滤波器实质上允许可见光波段的全部光线通过，即允许白光通过，以形成一可见光全通滤波器。
对于滤光结构可以构造为如前述实施例提供的滤光微纳结构20的滤波器而言，在单个透明基底10上，请参阅图6，多个相同的滤光微纳结构20呈矩形阵列彼此间隔排布，从而形成滤波器微纳结构阵列。此时，滤波器微纳结构阵列具有相应的光谱调制能力，也即允许部分光波段的光线通过，而其余的光波段不允许通过。即允许一种颜色的光线通过。
在本申请实施例中，滤光微纳结构20中，材质为透明材料的调制层的层厚为H3，H3＞300mm；且在滤光微纳结构阵列中，相邻滤光微纳结构20的中心轴线之间的间距为P，100nm≤P≤600nm。
间距P也即是滤光微纳结构阵列中滤光微纳结构的排布周期。此时，H3＞300mm， 可确保滤光微纳结构阵列等效出的光波导结构可提供数个本征波导模式，结合100nm≤P≤600nm，将使入射光通过周期性结构的波矢匹配原理，激发这些本征波导模式，达到光谱调制目的。
在本申请实施例中，第三滤波器300构造为可见光全通滤波器，以使允许通过的光线为白色光线。
具体的，可见光全通滤波器仅包括第二透明基底和第二透明保护层，第二透明保护层设置于第二透明基底的背离感光单元阵列的一侧。其中，第二透明基底为透明介质层中与滤波器阵列中无微纳结构的子区域对应的透明基底10。
可以理解的，宏像素区域中至少一个子区域对应的透明基底10上未设置有任何微纳结构，以允许可见光波段的全部光线通过。此时，该宏像素区域中至少一个子区域内设置的滤波器即为第三滤波器300。可以理解的，可见光全通滤波器近似全通光能量，可进一步提高滤波器阵列整体通光量。
在本申请实施例中，宏像素区域包括1个第一滤波器100、1个第二滤波器200和2个第三滤波器300，且1个第一滤波器100、1个第二滤波器200和2个第三滤波器300呈2×2阵列排布；其中，第一滤波器100和第二滤波器200具有前述实施例提供的滤光微纳结构。
此时，第一滤波器100和第二滤波器200供不同颜色的光线通过，也即是第一滤波器100和第二滤波器200中具有不同的滤光微纳结构。两种不同滤光微纳结构的滤波器结合2个第三滤波器组成一个2×2阵列排布的宏像素。
在本申请实施例中，第一透明基底的边长为e，e满足：e≤3μm。具体的，第一透明基底的边长小于或者等于3μm，从而滤光微纳结构阵列分布在一3μm×3μm的区域内，也即是本实施例中，每个滤波器的边长和小尺寸像元的边长相对应。
在一些实施例中，在第一滤波器100中，第一微纳调制层21和第二微纳调制层22的横截面宽度为D1，D1满足：100nm＜D1＜140nm。相邻滤光微纳结构的中心轴线之间的间距为P1，P1满足200nm＜P1＜300nm。
具体的，由于第一微纳调制层21和第二微纳调制层22组成的双层调制结构为柱状结构，且横截面形状为旋转角为90°的旋转对称图形。因此，当第一滤波器100中第一微纳调制层21和第二微纳调制层22的横截面形状为圆形时，横截面宽度D1为柱状结构的横截面直径。当第一滤波器100中第一微纳调制层21和第二微纳调制层22的横截 面形状为方形时，横截面宽度D1为柱状结构的横截面边长尺寸。而间距P1为滤光微纳结构阵列中滤光微纳结构的排布周期。
在一些实施例中，在第二滤波器200中，第一微纳调制层21和第二微纳调制层22的横截面宽度为D2，160＜D2＜200nm，相邻滤光微纳结构的中心轴线之间的间距为P2，350nm＜P2＜450nm。
也即，当第二滤波器200中第一微纳调制层21和第二微纳调制层22的横截面形状为圆形时，横截面宽度D2为柱状结构的横截面直径。当第一微纳调制层21和第二微纳调制层22的横截面形状为方形时，横截面宽度D2为柱状结构的横截面边长尺寸。而间距P2为滤光微纳结构阵列中滤光微纳结构的排布周期。
本实施例中提供的实施例排布周期和形状尺寸参数的组合效果较优，可使滤波器阵列在小尺寸像元下仍具有低照度下准确重建色彩的宽带调制功能。
在本申请实施例中，在宏像素区域的第一对角线方向上，至少一个第一滤波器100和至少一个第二滤波器200依次交替排列；在宏像素区域的第二对角线方向上，至少两个第三滤波器300依次排列。
其中，第一对角线方向和第二对角线方向相互平行或者相互垂直。
请参阅图5，针对一区域阵列中左上角2×2的宏像素区域，第一滤波器100位于左上角的子区域内，第二滤波器200位于右下角的子区域内，而2个第三滤波器300分别位于右上角和左下角的子区域内。此时，第一对角线方向为左上至右下方向，第二对角线方向为右上至左下方向，两者相互垂直。当然，第一滤波器100和第二滤波器200中的其中一者，或者是两者均具有前述实施例提供的滤光微纳结构20。
后续以第一滤波器100和第二滤波器200均具有前述实施例提供的滤光微纳结构20、第三滤波器300为可见光全通滤波器为例，此时，第一滤波器100高透过率宽带调制曲线为M1，第二滤波器200高透过率宽带调制曲线为M2，第三滤波器300接收能量值在所有谱段下近似为同一个值，可表示为C。第一滤波器100、第二滤波器200中的所有滤光微纳结构20共提供n个光谱调制通道。此时，宏像素区域所接收的3种颜色的光能量值I1,I2,I3表示为：
方程一：
其中，A为由宽带调制曲线M1、M2和C所组成的调制矩阵，φ(λn)为第n个光谱调制通道的入射光谱。利用压缩感知算法，可求解方程一得到宏像素对应的入射光谱，则入射光在宏像素位置的色彩RGB值如下：
可以理解的，压缩感知算法要求高透过率宽带调制曲线M1和高透过率宽带调制曲线为M2之间的相关性小，且尽可能趋近于R、G、B曲线的线性组合，即此时，M1和M2满足：min||Mi-(a·R+b·G+c·B)||2，i＝1,2。其中，a,b,c为常数。同时M1、M2和C所组成的调制矩阵A的最小归一化奇异值，即α＝min[SVD(A)]/sum[SVD(A)],一般应大于0.05，其中SVD(A)为对调制矩阵A的奇异值分解(Single Value Decomposition)。
可以理解的，第一滤波器100和第二滤波器200允许通过光线的颜色不同，即第一滤波器100和第二滤波器200内的滤光微纳结构阵列的具体结构不同，具体可以包括以下至少一项：单个微纳结构的形状不同、相邻微纳结构之间的间距不同或者微纳结构的数量不同。
为使得本领域技术人员，更好地理解本申请权利要求的保护范围。以下通过具体实施示例，对本申请权利要求记载的技术方案进行解释说明，可以理解的是，以下示例仅用于解释本申请，而不用于限定本申请权利要求的保护范围。以下示例中，调制层的结构高度、排布周期和形状尺寸参数的组合效果较优，可使滤波器阵列在小尺寸像元下仍具有低照度下准确重建色彩的宽带调制功能。
结构一：请参阅图1，透明基底10采用二氧化硅SiO2制成，第一微纳调制层21和第二微纳调制层22均构造为横截面为圆形的柱状结构。第一微纳调制层21采用光损耗材料非晶Si(α-Si)，第二微纳调制层22采用透明材料二氧化钛TiO2。可以理解的，TiO2的折射率大于SiO2。
第二微纳调制层22的高度范围在200-1000nm之间，相邻滤光微纳结构20的中心轴 线之间的间距在200-500nm之间，以保证双层调制结构内具有数个波导模式用于调制。其中，所述间距根据滤光微纳结构的具体结构和材料变化。为了确保较大光通量和增强少量微纳结构个数下的宽带调制能力，第一微纳调制层21的高度在20-100nm之间。第一微纳调制层21和第二微纳调制层22的整体占空比在0.2-0.8之间，以确保结构易于刻蚀制备。
基于上述结构一，提供两具体示例：
示例1：第一微纳调制层21(α-Si)的高度为62.8nm，第二微纳调制层22(TiO2)的高度为465.4nm，间距为265.2nm，占空比为0.31；
示例2：第一微纳调制层21(α-Si)的高度为62.8nm，第二微纳调制层22(TiO2)的高度为465.4nm，间距为377.3nm，占空比为0.57。
以示例1提供的滤光微纳结构20形成第一滤波器100，以示例2提供的滤光微纳结构20形成第二滤波器200。在一2×2的宏像素区域中，第一滤波器100位于左上角的子区域内，第二滤波器200位于右下角的子区域内，而2个允许白光通过的第三滤波器300分别位于右上角和左下角的子区域内。
请参阅图7，为示例1和示例2的高透过率宽带调制曲线。可见，示例1和示例2的宽带调制曲线的平均透过率分别达到75.4％和68.6％。请参阅图8，图8左侧图像为参考图像，参考图像为真值图像；图8中右侧图像为利用示例1和示例2的高透过率宽带调制曲线重建出的彩色图像，彩色图像的颜色准确性通过CIELAB色彩空间中的色差量化指标ΔE(delta-E)衡量。彩色图像的色彩偏差ΔE的平均值低至0.87，可见采用了示例1和示例2的滤波器阵列准确重建了图像颜色。
结构二：请参阅图4，透明基底10采用SiO2制成，第一微纳调制层21和第二微纳调制层22均构造为横截面为圆形的柱状结构。第一微纳调制层21采用透明材料氮化硅Si3N4制成，第二微纳调制层22采用光损耗材料多晶Si(p-Si)制成。
第一微纳调制层21的高度在200-1500nm之间，间距P在200-500nm之间以保证双层调制结构内具有数个波导模式用于调制。为了确保较大光通量和调制能力，第二微纳调制层22的高度在30-200nm之间。第一微纳调制层21和第二微纳调制层22的整体占空比0.2-0.8之间，确保结构易于刻蚀制备。
基于上述结构二，提供两具体示例：
示例3：第一微纳调制层21(Si3N4)的高度为431.3nm，第二微纳调制层22(p-Si) 的高度为76.5nm，间距为269.2nm，占空比为0.44；
示例4：第一微纳调制层21(Si3N4)的高度为431.3nm，第二微纳调制层22(p-Si)的高度为76.5nm，间距为347.9nm，占空比为0.54。
以示例3提供的滤光微纳结构20形成第一滤波器100，以示例4提供的滤光微纳结构20形成第二滤波器200。在一2×2的宏像素区域中，第一滤波器100位于左上角的子区域内，第二滤波器200位于右下角的子区域内，而2个允许白光通过的第三滤波器300分别位于右上角和左下角的子区域内。
请参阅图9，为示例3和示例4的高透过率宽带调制曲线。可见，示例3和示例4的宽带调制曲线的平均透过率分别达到65.7％和72.7％。重建出彩色图像的色彩偏差ΔE的平均值低至1.13，可见采用示例3和示例4的滤波器阵列准确重建了图像颜色。
结构三：请参阅图3，透明基底10采用SiO2制成，第一微纳调制层21和第二微纳调制层22均构造为横截面为方形的柱状结构。第一微纳调制层21采用光损耗材料多晶Si(p-Si)制成，第二微纳调制层22采用透明材料二氧化钛TiO2制成。
第一微纳调制层21的高度在20-100nm之间，间距P在200-500nm之间以保证双层调制结构内具有数个波导模式用于调制。为了确保较大光通量和调制能力，第二微纳调制层22的高度在200-1000nm之间。第一微纳调制层21和第二微纳调制层22的整体占空比0.2-0.8之间，确保结构易于刻蚀制备。
基于上述结构三，提供两具体示例：
示例5：第一微纳调制层21(p-Si)的高度为83.6nm，第二微纳调制层22(TiO2)的高度为313.2nm，间距为379.7nm，占空比为0.41；
示例6：第一微纳调制层21(p-Si)的高度为83.6nm，第二微纳调制层22(TiO2)的高度为313.2nm，间距为271.6nm，占空比为0.62。
以示例5提供的滤光微纳结构20形成第一滤波器100，以示例6提供的滤光微纳结构20形成第二滤波器200。在一2×2的宏像素中，第一滤波器100位于左上角的子区域内，第二滤波器200位于右下角的子区域内，而2个允许白光通过的第三滤波器300分别位于右上角和左下角的子区域内。
请参阅图10，为示例5和示例6的高透过率宽带调制曲线。可见，示例5和示例6的宽带调制曲线的平均透过率分别达到77.9％和63.8％。重建出彩色图像的色彩偏差ΔE 的平均值低至1.21，可见采用示例5和示例6的滤波器阵列准确重建了图像颜色。
以上所述为本申请的一些实施例，并非因此限制本申请的专利范围，凡是在本申请的发明构思下，利用本申请说明书及附图内容所作的等效结构变换，或直接/间接运用在其他相关的技术领域均包括在本申请的专利保护范围内。

Claims (12)

  1. 一种滤光微纳结构，包括：
    第一微纳调制层，所述第一微纳调制层设置于滤波器的透明基底，且所述第一微纳调制层的材质为透明材料和光损耗材料中的一者，所述光损耗材料的折射率高于所述透明材料的折射率；
    第二微纳调制层，所述第二微纳调制层设置于所述第一微纳调制层的背离所述透明基底的一侧，所述第二微纳调制层的材质为所述透明材料和所述光损耗材料中的另一者；
    透明保护层，所述透明保护层包覆所述第一微纳调制层和所述第二微纳调制层，并与所述透明基底连接；
    其中，所述透明材料的折射率高于所述透明基底和所述透明保护层的材料的折射率。
  2. 根据权利要求1所述的滤光微纳结构，其中，所述透明材料包括氮化硅Si3N4或者二氧化钛TiO2；和/或
    所述光损耗材料包括多晶硅P-Si、非晶硅α-Si或者锗Ge。
  3. 根据权利要求1所述的滤光微纳结构，其中，所述第一微纳调制层和所述第二微纳调制层均构造为柱状结构，且所述第一微纳调制层和所述第二微纳调制层的横截面形状均为旋转角为90°的旋转对称图形。
  4. 根据权利要求1所述的滤光微纳结构，其中，所述透明基底的厚度大于3.5μm。
  5. 根据权利要求1所述的滤光微纳结构，其中，所述第一微纳调制层和所述第二微纳调制层的整体占空比为η，0.2≤η≤0.8。
  6. 根据权利要求1所述的滤光微纳结构，其中，所述第一微纳调制层和所述第二微纳调制层中，材质为所述光损耗材料的调制层的层厚为H2，10nm≤H2≤100nm。
  7. 一种滤波器阵列，包括：和感光单元阵列在位置上对应设置的区域阵列，且所述区域阵列包括多个宏像素区域，每个所述宏像素区域包括至少一个第一滤波器、至少一个第二滤波器和至少一个第三滤波器，所述第一滤波器允许第一颜色的光线通过，所述第二滤波器允许第二颜色的光线通过，所述第三滤波器允许第三颜色的光线通过；
    其中，所述第一滤波器、所述第二滤波器和所述第三滤波器中的至少一者包括第一透明基底以及设置于所述第一透明基底一侧的滤光微纳结构阵列，所述滤光微纳结构阵列包括呈矩形阵列排布的多个滤光微纳结构，且所述滤光微纳结构构造为如权利要求1至6任一项所述的滤光微纳结构。
  8. 根据权利要求7所述的滤波器阵列，其中，所述滤光微纳结构中，材质为透明材料的调制层的层厚大于300mm；且在所述滤光微纳结构阵列中，相邻所述滤光微纳 结构的中心轴线之间的间距为P，100nm≤P≤600nm。
  9. 根据权利要求8所述的滤波器阵列，其中，所述第三滤波器构造为可见光全通滤波器，以使允许通过的光线为白色光线；
    所述可见光全通滤波器包括第二透明基底和第二透明保护层，所述第二透明保护层设置于所述第二透明基底的背离感光单元阵列的一侧。
  10. 根据权利要求9所述的滤波器阵列，其中，所述宏像素区域包括1个所述第一滤波器、1个所述第二滤波器和2个所述第三滤波器，且1个所述第一滤波器、1个所述第二滤波器和2个所述第三滤波器呈2×2阵列排布；
    其中，所述第一滤波器和所述第二滤波器均具有如权利要求1至6任一项所述的滤光微纳结构。
  11. 根据权利要求10所述的滤波器阵列，其中，所述第一透明基底的边长小于或等于3μm；
    其中，所述第一滤波器中的第一微纳调制层和第二微纳调制层的横截面宽度为D1，D1满足：100＜D1＜140nm，相邻所述滤光微纳结构的中心轴线之间的间距为P1，P1满足200＜P1＜300nm；所述第二滤波器中的第一微纳调制层和第二微纳调制层的横截面宽度为D2，160＜D2＜200nm，相邻所述滤光微纳结构的中心轴线之间的间距为P2，350nm＜P2＜450nm。
  12. 根据权利要求9所述的滤波器阵列，其中，在所述宏像素区域的第一对角线方向上，至少一个所述第一滤波器和至少一个所述第二滤波器依次交替排列；
    在所述宏像素区域的第二对角线方向上，至少两个所述第三滤波器依次排列；
    其中，所述第一对角线方向和所述第二对角线方向相互平行或者相互垂直。
PCT/CN2024/086977 2023-06-14 2024-04-10 滤光微纳结构和滤波器阵列 Ceased WO2024255410A1 (zh)

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