WO2024183155A1 - 一种半导体结构的制备方法及半导体结构 - Google Patents

一种半导体结构的制备方法及半导体结构 Download PDF

Info

Publication number
WO2024183155A1
WO2024183155A1 PCT/CN2023/094783 CN2023094783W WO2024183155A1 WO 2024183155 A1 WO2024183155 A1 WO 2024183155A1 CN 2023094783 W CN2023094783 W CN 2023094783W WO 2024183155 A1 WO2024183155 A1 WO 2024183155A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
chemical mechanical
semiconductor
grinding
initial structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2023/094783
Other languages
English (en)
French (fr)
Inventor
蔡长益
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changxin Memory Technologies Inc
Original Assignee
Changxin Memory Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changxin Memory Technologies Inc filed Critical Changxin Memory Technologies Inc
Publication of WO2024183155A1 publication Critical patent/WO2024183155A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/60—Mechanical treatments, e.g. by ultrasounds

Definitions

  • the present disclosure is based on a Chinese patent application with application number 202310218737.X, application date March 3, 2023, and invention name “A method for preparing a semiconductor structure and a semiconductor structure”, and claims the priority of the Chinese patent application.
  • the entire contents of the Chinese patent application are hereby introduced into the present disclosure as a reference.
  • the present disclosure relates to the field of semiconductor manufacturing, and in particular to a method for preparing a semiconductor structure and a semiconductor structure.
  • CMP chemical mechanical polishing technology
  • the present disclosure provides a method for preparing a semiconductor structure, comprising:
  • the grinding liquid comprising: grinding particles, deionized water and a surfactant, and the pH value of the grinding liquid is not greater than 3.5;
  • the grinding liquid is used to perform chemical mechanical grinding on the initial semiconductor structure to obtain a semiconductor structure.
  • the grinding liquid further includes a pH adjuster, and the pH value of the grinding liquid is 2.5-3.5.
  • the material of the semiconductor initial structure during chemical mechanical polishing includes one or at least two of silicon dioxide, silicon nitride, polysilicon, tungsten, titanium and titanium nitride; or
  • the material of the semiconductor initial structure during chemical mechanical polishing includes at least one of silicon nitride, polysilicon, tungsten, titanium and titanium nitride, and silicon dioxide.
  • the semiconductor initial structure is subjected to chemical mechanical polishing using the polishing liquid, including:
  • the grinding amount of any material of the semiconductor initial structure is not more than 220nm; and/or
  • the surface roughness of the obtained semiconductor structure is no greater than 0.5 nm.
  • the polishing amount is no greater than 220 nm;
  • the polishing amount is no more than 10 nm;
  • the polishing amount is no more than 50 nm;
  • the polishing amount is no more than 20 nm;
  • the polishing amount is no more than 12 nm.
  • the abrasive particles include silicon dioxide particles, and the content of the silicon dioxide particles is 7.5 wt %-8.5 wt % based on the weight of the abrasive liquid.
  • the abrasive particles have a particle size of 40-60 nm.
  • the content of the deionized water is 90.5 wt %-92 wt %.
  • the content of the surfactant in the polishing liquid is an amount required for the polishing liquid to reduce the contact angle of polycrystalline silicon from 77° to less than 40°.
  • the surfactant comprises a nonionic surfactant, and the hydrophile-lipophile balance value of the nonionic surfactant is 9.6-16.7.
  • the nonionic surfactant includes at least one of polysorbate, polyoxyethylene fatty acid ester, hexaethylene glycol monostearate, polyoxyethylene cetyl ether, polyoxyethylene monopalmitate, and polyoxyethylene monooleate.
  • the material of the semiconductor initial structure subjected to chemical mechanical polishing includes at least one of polysilicon, tungsten, titanium and titanium nitride
  • an oxidant is added to the polishing liquid before the semiconductor initial structure is subjected to chemical mechanical polishing using the polishing liquid.
  • the oxidant includes hydrogen peroxide, and the amount of hydrogen peroxide added is 0.5 wt % to 3 wt % based on the weight of the polishing liquid.
  • the material of the semiconductor initial structure during chemical mechanical polishing includes at least one of a first material layer and a second material layer, the material of the first material layer is silicon oxide or silicon nitride, and the material of the second material layer is polysilicon, tungsten, titanium or titanium nitride.
  • the method further includes:
  • the first processing solution to perform a first chemical mechanical polishing treatment on the first material layer of the semiconductor initial structure until the polishing amount and/or the surface roughness of the first material layer is within a predetermined range, wherein the amount of the oxidant added is 0-3wt% based on the weight of the polishing solution;
  • the second material layer of the semiconductor initial structure is subjected to a second chemical mechanical polishing treatment using the second processing solution until the polishing amount and/or surface roughness of the second material layer is within a predetermined range; wherein the amount of the oxidant added is 0.5wt-3wt% based on the weight of the polishing liquid.
  • the amount of the oxidant added is 0.5wt%-3wt% based on the weight of the polishing liquid
  • the amount of the oxidant added is 0.5wt%-2.5wt% based on the weight of the polishing liquid;
  • the amount of the oxidant added is 0.5 wt %-1 wt % based on the weight of the polishing liquid.
  • the polishing liquid before using the polishing liquid to perform chemical mechanical polishing on the semiconductor initial structure, the polishing liquid is diluted.
  • the chemical mechanical polishing process is performed in the same polishing liquid supply system.
  • the present disclosure also provides a semiconductor structure, wherein the semiconductor structure is formed by any one of the above embodiments. Prepared by the method described in item.
  • FIG1 is a flowchart of a method for preparing a semiconductor structure provided by an embodiment of the present disclosure
  • FIG2 is a schematic structural diagram of a semiconductor structure preparation process provided by an embodiment of the present disclosure.
  • FIG3 is a schematic diagram of the grinding mechanism of polysilicon material
  • 4 to 6 are trend diagrams showing the effect of the hydrogen peroxide content in the processing solution on the polishing rates of some metal materials, some dielectric materials and polysilicon materials provided by the embodiments of the present disclosure
  • FIG7 is a diagram showing the mechanism of action of hydrogen peroxide on polysilicon material provided by an embodiment of the present disclosure
  • FIG8 is a schematic diagram showing the effect of hydrogen peroxide content on pH value.
  • an embodiment of the present disclosure provides a method for preparing a semiconductor structure, as shown in FIG1 , the method includes the following steps:
  • Step S101 providing a grinding liquid, the grinding liquid comprising: abrasive particles, deionized water and a surfactant, and the pH value of the grinding liquid is not greater than 3.5;
  • Step S102 using a polishing liquid to perform chemical mechanical polishing on the initial semiconductor structure to obtain a semiconductor structure.
  • Fig. 2 is a schematic diagram of the structure of the semiconductor structure preparation process provided by the embodiment of the present disclosure. As shown in Fig. 2, after the semiconductor initial structure 106 is subjected to chemical mechanical polishing, a semiconductor structure 107 is obtained.
  • the semiconductor structure preparation method provided by the embodiment of the present disclosure can be applied to the micro-chemical mechanical polishing process to obtain a polished surface with high flatness, and at the same time, the product yield can be improved.
  • semiconductor initial structures of various materials can share a single polishing liquid, so only one polishing liquid supply system is needed to achieve the polishing of semiconductor initial structures of different materials, thereby effectively improving the efficiency of chemical mechanical polishing, simplifying the process flow, and reducing the process cost.
  • the inventors of the present application creatively discovered in their research that in an acidic environment, the SiO2 surface has a negative zeta potential, so there is no grinding rate for SiO2 . Only in a strong acidic environment (pH ⁇ 2) will the SiO2 surface potential change from negative to positive, and then there will be a grinding rate and grinding amount. In an acidic environment, the addition of a nonionic surfactant makes the SiO2 surface more hydrophilic. Therefore, there is a grinding rate when the pH is 3.1, but the grinding rate is not high, so only SiO2 micro-grinding (buff slurry) can be performed. The specific results can be found in Tables 1 and 2.
  • the specific grinding mechanism of polysilicon material in an acidic environment is shown in FIG3. It can be seen that the surfactant 105 in the grinding liquid will be adsorbed on the surface of the polysilicon material 103, which can make the surface of the polysilicon material 103 more hydrophilic, so the adsorption force between the grinding particles 101 and the surface of the semiconductor initial structure will increase, and the grinding force of the grinding particles 101 on the surface of the semiconductor initial structure will also be greater, thereby increasing the grinding amount, so that the polysilicon material 103 can be ground in an acidic environment, and the defects 201 are removed to form a smooth surface.
  • the polishing liquid is in an acidic environment, due to the addition of surfactants, the polishing liquid provided by the embodiment of the present disclosure is not only applicable to materials that need to be polished under acidic conditions, such as tungsten, titanium nitride, and silicon nitride, but can also be expanded to materials that need to be polished under alkaline conditions, such as polysilicon and silicon dioxide.
  • the polishing process of the above materials can use one polishing liquid, so only one set of chemical polishing liquid supply system (Slurry Dispense System, SDS) is needed to realize chemical mechanical polishing (CMP) of semiconductor initial structures of different materials, which can simplify the CMP process and reduce costs.
  • SDS chemical polishing liquid supply system
  • the amount or content of the surfactant added to the polishing liquid is such that the contact angle of the polysilicon is increased from 77° to Reduced to less than 40°.
  • the content of the above-mentioned surfactant can modify the polysilicon surface from hydrophobic to hydrophilic, thereby improving the grinding efficiency to a greater extent.
  • the content of the surfactant can be the amount required for the grinding liquid to reduce the contact angle of polysilicon from 77° to less than 35°, 30°, 25° or 20°. As the contact angle of the surface of the polysilicon material becomes smaller and smaller, the surface of the material becomes more hydrophilic.
  • the surfactant comprises a nonionic surfactant having a hydrophilic-lipophilic balance value of 9.6-16.7, including endpoint values.
  • Non-ionic surfactants are uncharged, have high stability in solution, are not easily affected by the presence of strong electrolytes (and are less affected by acids and alkalis), can be mixed with other types of surfactants, and have good compatibility. And the solubility in water will increase with the increase of various groups in the molecule.
  • the structure of non-ionic surfactants determines that they have better wetting, emulsification, solubilization and other properties. They can emulsify the internal components of the grinding liquid while wetting the surface of the semiconductor initial material, and can be used as a solubilizer, dispersant, and wetting agent at the same time.
  • Non-ionic surfactants with a hydrophile-lipophile balance value ranging from 9.6 to 16.7 have better wetting, dispersing and emulsifying effects.
  • non-ionic surfactants with a hydrophile-lipophile balance value of 9.6, 10.0, 12.5, 13.0, 15.3, 15.5, 16.0, 16.2, 16.9, etc. can also be selected.
  • the purpose of introducing non-ionic surfactants is also to prevent the abrasive particles from agglomerating.
  • the agglomeration of abrasive particles will cause the chemical mechanical polishing rates of various regions to be inconsistent during the chemical mechanical polishing process, thereby affecting the flattening efficiency of the polished surface.
  • the components of the polishing liquid usually also include a dispersant, and the non-ionic surfactant in the polishing liquid provided in the embodiment of the present disclosure can make the abrasive particles evenly dispersed in the solution to prevent deposition, thereby improving the polishing effect, reducing the process difficulty when preparing the mother solution and effectively reducing costs.
  • the nonionic surfactant may include but is not limited to at least one of polysorbate, polyoxyethylene fatty acid ester, hexaethylene glycol monostearate, polyoxyethylene cetyl ether, polyoxyethylene monopalmitate and polyoxyethylene monooleate.
  • the polishing liquid further includes a pH regulator, which makes the pH value of the polishing liquid between 2.5 and 3.5 (including the endpoint values).
  • the pH value of the polishing liquid can be 3.
  • the pH regulator can be an organic acid, including but not limited to phosphoric acid, organic acid oxalic acid and citric acid.
  • the embodiment of the present disclosure can obtain a better chemical mechanical polishing surface by adjusting the pH value to the above range.
  • the abrasive particles include silica particles. Based on the weight of the grinding liquid, the content of the silica particles is 7.5wt%-8.5wt% (including the endpoint values). For example, the content of the abrasive particles can be 7.8wt%, 8wt%, 8.2wt%, 8.4wt%, etc.
  • the particle size of the abrasive particles is crucial to the CMP process.
  • the particle size of the abrasive particles is too large, it is easy to scratch the surface of the initial structure of the semiconductor, affecting the effect of the surface treatment and causing product defects; when the particle size of the abrasive particles is too small, it is easy to cause low efficiency of chemical mechanical polishing and increase process costs.
  • the appropriate particle size can be selected according to the type of material of the initial structure of the semiconductor.
  • the particle size of the abrasive particles ranges from 40 to 60 nm (including endpoint values), for example, the particle size of the silicon dioxide particles can be 40 nm, 45 nm, 50 nm, 55 nm, or 58 nm, etc.
  • the particle size of the abrasive particles used in the embodiment of the present disclosure during surface treatment is between 40-60 nm, which is abrasive particles with a smaller particle size. Therefore, it scratches the surface of the polished material less during the chemical mechanical polishing process, thereby reducing the generation of defects.
  • Table 3 shows the relationship between the grinding rate of common materials in semiconductor structures and the relevant hydrogen peroxide concentration, pH value, solid content, and grinding amount requirements (non-ionic surfactants that meet the above-mentioned preset conditions are added to Table 3, not shown).
  • the polishing process when the surface roughness is reduced to less than or equal to 0.5nm belongs to the fine polishing process, which can ensure that the surface of the wafer has extremely high nano-morphological features. It can be seen that when the semiconductor initial structure is subjected to chemical mechanical treatment in the embodiment of the present disclosure, the grinding amount of any material of the semiconductor initial structure is not greater than 220nm (including the endpoint value), and the surface roughness of the obtained semiconductor structure is not greater than 0.5nm.
  • the grinding amount does not exceed 100 nanometers, 220 nanometers, 10 nanometers, 10 nanometers, 50 nanometers, 12 nanometers, 12 nanometers and 20 nanometers, respectively.
  • the material of the semiconductor initial structure undergoing chemical mechanical polishing is silicon dioxide, the polishing amount is no more than 220 nm.
  • the grinding rate of polysilicon, tungsten, titanium and titanium nitride is very low, which is difficult to meet the needs of removing surface defects and process requirements.
  • the grinding rate of polysilicon, tungsten, titanium and titanium nitride is significantly improved, and the corresponding grinding amount can also be obtained in the process. Therefore, in the embodiment of the present disclosure, when the material of the semiconductor initial structure subjected to chemical mechanical polishing includes at least one of polysilicon, tungsten, titanium and titanium nitride, an oxidizing agent can be added to the polishing liquid before the semiconductor initial structure is subjected to chemical mechanical polishing.
  • the oxidizing agent includes hydrogen peroxide.
  • the grinding rates of different materials are related to parameters such as the ratio of hydrogen peroxide, pH value and dilution ratio. According to the grinding amount requirements, roughness requirements and grinding rate requirements of different grinding objects, a suitable ratio of hydrogen peroxide can be selected, and the pH and solid content of the processing solution can be adjusted to prepare a processing solution with the best grinding rate. In addition, the pressure, time and other parameters during chemical mechanical grinding can be adjusted to maximize the grinding efficiency using the processing solution in this embodiment.
  • tungsten metal As an example to explain the mechanism of adding oxidants to increase the grinding amount. From the chemical formula below, we can see that due to the ductility of metal, hydrogen peroxide first oxidizes the surface of tungsten into tungsten trioxide (WO 3 ). Compared with tungsten, tungsten oxide is a brittle material and is in closer contact with the abrasive particles, so it is easier to be removed by friction with the abrasive particles, so the grinding rate can be greatly improved. For metal materials with similar properties to metal tungsten conductive materials, the above mother solution is used to The mechanism of surface treatment is similar and will not be elaborated here. H 2 O 2 +2H + +2e - ⁇ 2H 2 O W+3H 2 O ⁇ WO 3 +6H + +6e - W+4H 2 O ⁇ WO 4 2- +8H + + +6e -
  • the oxidant may be, in addition to hydrogen peroxide, other oxidants commonly used in the art.
  • the amount or concentration of the oxidant added depends on the required grinding amount, which is the grinding thickness required to reduce the surface roughness of the semiconductor initial structure to less than or equal to 0.5 nm. That is, after the grinding process, the grinding amount of the semiconductor initial structure does not exceed 220 nm, and the surface roughness of the obtained semiconductor structure is not greater than 0.5 nm.
  • the amount of hydrogen peroxide added is 0.5wt% to 3wt%, for example, 0.6wt%, 0.9wt%, 1.5wt%, 2.3wt%, 3.0wt%, etc. It should be noted that, as shown in FIG8 , hydrogen peroxide can affect the pH value of the processing solution. If the content of hydrogen peroxide is too high, for example, more than 3.0wt%, the acid-base environment of the processing solution changes too much, which may affect the polishing effect. Therefore, the amount of hydrogen peroxide added needs to take into account the pH value of the polishing liquid.
  • Figure 4 shows the relationship between the polishing rate and the oxidant concentration of tungsten, titanium and titanium nitride. It can be seen that when the content of hydrogen peroxide in the polishing liquid is 0, the chemical mechanical polishing is dominated by mechanical friction and the polishing rate is extremely low. The relationship between the polishing rate and the oxidant concentration of different materials is different.
  • the polishing rate of metal tungsten is positively correlated with the concentration of the oxidant, and metal tungsten is relatively sensitive to the concentration of the oxidant, while the polishing rate of titanium decreases after the concentration of the oxidant exceeds 2.5wt%. Therefore, when the material of the semiconductor initial structure during chemical mechanical polishing is tungsten, the amount of the oxidant added is 0.5wt%-3wt% (including the endpoint value) based on the weight of the polishing liquid. When the material of the semiconductor initial structure during chemical mechanical polishing is titanium, the amount of the oxidant added is 0.5wt%-2.5wt% (including the endpoint value) based on the weight of the polishing liquid.
  • titanium nitride as a common metal material in semiconductor processes, often requires a trace chemical mechanical polishing process.
  • the grinding rate of titanium nitride first increases with the increase of the oxidant concentration, but when the concentration of the oxidant exceeds 0.5%, the grinding rate of titanium nitride slowly decreases with the concentration of the oxidant.
  • the content of hydrogen peroxide is 0.5%, the grinding rate of TiN can reach a maximum of 190nm/min. Therefore, when the material of the semiconductor initial structure undergoing chemical mechanical polishing is titanium nitride, the amount of oxidant added is 0.5wt%-1wt% based on the weight of the polishing liquid.
  • a preferred embodiment can add 0.5% hydrogen peroxide to maximize the grinding efficiency of titanium nitride.
  • FIG. 6 shows the relationship between the polishing rate of polysilicon material and the concentration of oxidant
  • FIG. 7 shows the relationship between the polishing rate of polysilicon material and the concentration of oxidant.
  • the mechanism diagram of the action of hydrogen peroxide on polysilicon material provided in the embodiment. According to FIG7 and the following chemical formula: H2O2 ⁇ H + + HO2- Si + 2HO 2- ⁇ 2OH - + SiO 2 Si + 2H 2 O 2 ⁇ SiO 2 + 2H 2 O
  • hydrogen peroxide can oxidize the surface of the polysilicon material 103 and form a layer of silicon dioxide film 104 on the surface of the polysilicon material 103, which enhances the hydrophilicity of the polysilicon surface and improves the polishing rate.
  • the polishing rate of polysilicon is positively correlated with the concentration of the oxidant. Therefore, when the material of the semiconductor initial structure undergoing chemical mechanical polishing is polysilicon, the amount of the oxidant added can be 0.5wt%-3wt% based on the weight of the polishing liquid.
  • the inventors of the present application have found in their research that further adding an oxidant to a polishing liquid containing a surfactant can further increase the polishing rate of polysilicon.
  • the addition of hydrogen peroxide not only achieves the grinding of metal materials, but also optimizes the grinding effect of polysilicon materials.
  • the amount of polysilicon grinding depends on the size of surface defects. After grinding by the method provided by the embodiment of the present disclosure, and then undergoing the subsequent etching process, the surface of the polysilicon wafer will have almost no defects.
  • Table 5 shows a preferred grinding liquid formula, which can have a good grinding effect on the above materials. It should be understood that since silicon dioxide and silicon nitride are not sensitive to the addition of oxidants, and polysilicon materials can obtain a certain amount of grinding in the presence of surfactants, when the material of the semiconductor initial structure is one or more of silicon dioxide, silicon nitride or polysilicon materials, the addition of oxidants is not necessary, that is, before the semiconductor initial structure of the above materials is ground, the oxidant may not be added to the grinding liquid. However, when the material of the semiconductor initial structure is polysilicon, an oxidant may be added to further increase the grinding rate.
  • the preparation method of the present disclosure after providing the polishing liquid, further includes:
  • Adding an oxidant to the polishing liquid to obtain a first processing solution wherein the first processing solution is used to perform a first chemical mechanical polishing process on a first material layer of the semiconductor initial structure;
  • An oxidant is added to the polishing liquid to obtain a second processing solution, which is used to treat the initial structure of the semiconductor.
  • the second material layer of the semiconductor initial structure is subjected to a second chemical mechanical polishing treatment using a second processing solution until the polishing amount and/or surface roughness of the second material layer is within a predetermined range; wherein the amount of the oxidant added is 0.5wt-3wt% based on the weight of the polishing liquid.
  • the first material layer is silicon dioxide and the second material layer is tungsten.
  • the silicon dioxide can be ground first, and then the tungsten can be processed after the roughness requirement is met.
  • the surface treatment of tungsten materials is more dependent on the proportion of oxidants, while the grinding of silicon dioxide is not much dependent on the concentration of oxidants. As shown in Figure 5, the content of oxidants in the grinding liquid does not have a strong effect on silicon oxide and silicon nitride. Therefore, in actual operation, when the first material layer is ground, the amount of oxidant added can be 0, that is, no oxidant can be added to the first processing solution.
  • the grinding liquid supply system first provides the mother liquid to the grinding processing machine.
  • the mother liquid includes abrasive particles, deionized water and surfactants, and the pH value of the mother liquid is not greater than 3.5.
  • the grinding processing machine introduces the oxidant before the grinding process according to the requirements of the semiconductor initial structure of different types of materials for the oxidant.
  • the amount of oxidant introduced can also be adjusted in real time to facilitate the grinding of the semiconductor initial structure of the composite material. In this way, the oxidant is added by the grinding processing machine before use, so that even if different types of materials have different requirements for the oxidant content, only one mother liquid and one SDS supply system are needed to achieve chemical mechanical grinding of a variety of materials.
  • the grinding processing machine includes all chemical mechanical grinding machine models, such as Applied Materials (AMAT) of the United States, EBARA of Japan, HHQK of China, etc.
  • the surface treatment machine can be equipped with a real-time oxidant supply component to introduce the oxidant into the mother liquid and control the dosage and duration of the oxidant introduction.
  • the dilution multiple can be adjusted according to the requirements of surface roughness, grinding amount and grinding rate.
  • the dilution step here can also be achieved using the deionized water pipe in the grinding processing machine. It is mentioned in the above content that for materials such as silicon dioxide, polysilicon and silicon nitride, the amount of oxidant added can be 0. Therefore, when the material of the initial structure of the semiconductor is one or more of silicon dioxide or silicon nitride, the grinding processing machine will not pass the oxidant into the mother liquor, but will dilute the mother liquor before grinding.
  • the grinding liquid supply system before providing the mother liquor to the grinding processing machine, can pass deionized water into the mother liquor for dilution; in another embodiment, after providing the mother liquor to the grinding processing machine, the mother liquor can be diluted by passing deionized water into the mother liquor through the water pipe in the grinding processing machine.
  • the dilution ratio is determined according to the actual grinding rate requirement of the initial semiconductor structure. In a specific embodiment, based on the weight of the grinding liquid, the content of deionized water is 90.5wt%-92wt%, including endpoint values, such as 91.2wt%, 91.5wt%, 91.8wt%, etc.
  • the pH value of the resulting polishing liquid is in the range of 2.5-3.5, including the end values, and can also be in the range of 2.6-2.8, 2.8-3.0, or 3.0-3.2. Moreover, the sum of the contents of each component in the polishing liquid of the present application is 100%.
  • the material of the semiconductor initial structure can be one or at least two of silicon dioxide, silicon nitride, polysilicon, tungsten, titanium and titanium nitride.
  • polysilicon is often used as a substrate semiconductor material, and tungsten, titanium nitride and titanium are usually used for connecting wires, capacitor plates, contact plugs, word lines or bit lines and other components.
  • the semiconductor initial structure material is one of tungsten, titanium nitride or titanium, and polysilicon.
  • Polysilicon, tungsten, titanium and titanium nitride materials have different proportional dependences on oxidants, and polysilicon can also obtain a certain amount of grinding without adding oxidants. Therefore, in actual operation, the content of the oxidant in the grinding liquid can be adjusted according to the grinding amount requirements of the semiconductor initial structure, thereby realizing chemical mechanical grinding of the semiconductor initial structure.
  • the material of the semiconductor initial structure may also be a composition of at least one of silicon nitride, polysilicon, tungsten, titanium and titanium nitride and silicon dioxide.
  • the semiconductor initial structure material is silicon nitride and silicon dioxide.
  • semiconductor initial structure materials are not limitations on the semiconductor initial structure materials disclosed herein.
  • the types of materials of the semiconductor initial structure are not limited to two, and can be any material that can be ground based on the grinding liquid disclosed herein.
  • the method provided in the present invention can achieve fine polishing, and its grinding amount can be controlled below 220 nanometers.
  • the grinding amount of some materials can be controlled below 10 nanometers. Therefore, the method provided in the present invention can be better applied to micro-grinding processes to improve grinding fineness and grinding quality.
  • the present disclosure also provides a semiconductor structure, which is prepared by the method provided by any of the above-mentioned embodiments of the present disclosure.
  • the semiconductor structure includes, but is not limited to, a DRAM structure or other semiconductor devices, and the method of the present disclosure can be used to operate the grinding object when it is the same or similar to the material mentioned in any of the above-mentioned embodiments.
  • the semiconductor structure preparation method provided by the embodiment of the present disclosure can be applied to the micro-chemical mechanical polishing process to obtain a high planarization efficiency and a polished surface with a high flatness, and at the same time, the product yield can be improved.
  • multiple materials can share a single polishing liquid, so only one polishing liquid supply system is needed to achieve the polishing of different materials, thereby simplifying the process flow and reducing costs.
  • the method for preparing the semiconductor structure provided by the embodiment of the present disclosure can be applied to the micro-chemical mechanical polishing process, can effectively reduce surface defects, reduce surface roughness, obtain a polished surface with higher flatness, improve the chemical mechanical polishing effect, and can also improve the product yield. More importantly, the polishing liquid provided by the embodiment of the present disclosure can realize surface treatment of various materials. For different polishing objects, semiconductor initial structures of various materials can share a single polishing liquid. Therefore, only one set of chemical polishing liquid supply system (Slurry Dispense System, SDS) is needed to realize chemical mechanical polishing (CMP) of semiconductor initial structures of different materials, thereby simplifying the CMP process and reducing costs.
  • SDS chemical polishing liquid supply system

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

一种半导体结构及其制备方法，包括：提供研磨液，研磨液包括：研磨颗粒(101)、去离子水和表面活性剂(105)，研磨液的pH值不大于3.5；采用研磨液对半导体初始结构(106)进行化学机械研磨处理，得到半导体结构(107)。半导体结构制备方法能够实现对多种材料进行表面处理，针对不同抛光对象，多种材质的半导体初始结构可共用一种研磨液，因此只需一套化学研磨液供应系统即可对不同材质的半导体初始结构实现化学机械研磨(CMP)，从而简化CMP工艺，降低成本。

Description

一种半导体结构的制备方法及半导体结构
相关申请的交叉引用
本公开基于申请号为202310218737.X、申请日为2023年03月03日、发明名称为“一种半导体结构的制备方法及半导体结构”的中国专利申请提出，并要求该中国专利申请的优先权，该中国专利申请的全部内容在此引入本公开作为参考。
技术领域
本公开涉及半导体制造领域，尤其涉及一种半导体结构的制备方法及半导体结构。
背景技术
随着半导体工业飞速发展，电子器件的尺寸越来越小，对半导体原材料晶片表面的平整度要求也越来越高，此时CMP(化学机械研磨技术)就显得至关重要。例如，14纳米以下逻辑芯片工艺要求的关键CMP工艺将达到20步以上，使用的研磨液将从90纳米的五六种研磨液增加到二十种以上；7纳米及以下逻辑芯片工艺中CMP步骤甚至可能达到30步，使用的研磨液种类接近三十种。因此，随着芯片制程不断精细，抛光材料种类不断增多，抛光工艺也更加复杂，导致化学机械研磨工艺在化学机械研磨效率、工艺成本等方面仍存在诸多不足。
发明内容
本公开实施例提供了一种半导体结构的制备方法，包括：
提供研磨液，所述研磨液包括：研磨颗粒、去离子水和表面活性剂，所述研磨液的pH值不大于3.5；
采用所述研磨液对半导体初始结构进行化学机械研磨处理，得到半导体结构。
在一些实施例中，所述研磨液还包括pH值调节剂，所述研磨液的pH值为2.5-3.5。
在一些实施例中，所述半导体初始结构进行化学机械研磨处理时的材质包括二氧化硅、氮化硅、多晶硅、钨、钛和氮化钛中的一种或至少两种；或者
所述半导体初始结构进行化学机械研磨处理时的材质包括氮化硅、多晶硅、钨、钛和氮化钛中的至少一种、以及二氧化硅。
在一些实施例中，采用所述研磨液对所述半导体初始结构进行化学机械研磨处理，包括：
对所述半导体初始结构的任一种材质的研磨量不大于220nm；和/或
得到的所述半导体结构的表面粗糙度不大于0.5nm。
在一些实施例中，所述半导体初始结构进行化学机械研磨处理时的材质为二氧化硅时，所述研磨量不大于220nm；和/或
所述半导体初始结构进行化学机械研磨处理时的材质为氮化硅时，所述研磨量不大于10nm；和/或
所述半导体初始结构进行化学机械研磨处理时的材质为多晶硅时，所述研磨量不大于50nm；和/或
所述半导体初始结构进行化学机械研磨处理时的材质为钨时，所述研磨量不大于20nm；和/或
所述半导体初始结构进行化学机械研磨处理时的材质为钛或氮化钛时，所述研磨量不大于12nm。
在一些实施例中，所述研磨颗粒包括二氧化硅颗粒，以所述研磨液的重量为基准，所述二氧化硅颗粒的含量为7.5wt％-8.5wt％。
在一些实施例中，所述研磨颗粒的粒径为40-60nm。
在一些实施例中，以所述研磨液的重量为基准，所述去离子水的含量为90.5wt％-92wt％。
在一些实施例中，所述研磨液中所述表面活性剂的含量为所述研磨液将多晶硅的接触角从77°降低到小于40°所需的量。
在一些实施例中，所述表面活性剂包括非离子型表面活性剂，所述非离子型表面活性剂的亲水亲油平衡值为9.6-16.7。
在一些实施例中，所述非离子型表面活性剂包括聚山梨脂、聚氧乙烯脂肪酸酯、六乙二醇单硬脂酸酯、聚氧乙烯十六烷基醚、聚氧乙烯单棕榈酸酯和聚氧乙烯单油酸酯中的至少一种。
在一些实施例中，当所述半导体初始结构进行化学机械研磨处理时的材质包括多晶硅、钨、钛和氮化钛中的至少一种时，在采用所述研磨液对半导体初始结构进行化学机械研磨处理之前，向所述研磨液中加入氧化剂。
在一些实施例中，所述氧化剂包括过氧化氢，以所述研磨液的重量为基准，所述过氧化氢的加入量为0.5wt％至3wt％。
在一些实施例中，所述半导体初始结构进行化学机械研磨处理时的材质包括第一材料层和第二材料层中的至少一种，所述第一材料层的材质为氧化硅或氮化硅，所述第二材料层的材质为多晶硅、钨、钛或氮化钛，提供所述研磨液之后，所述方法还包括：
向所述研磨液中加入氧化剂，得到第一处理溶液，所述第一处理溶液用于对所述半导体初始结构的第一材料层进行第一化学机械研磨处理；
采用所述第一处理溶液对所述半导体初始结构的第一材料层进行第一化学机械研磨处理，直至第一材料层的研磨量和/或表面粗糙度为预定范围，其中，以所述研磨液的重量为基准，所述氧化剂的加入量为0-3wt％；
向所述研磨液中加入氧化剂，得到第二处理溶液，所述第二处理溶液用于对所述半导体初始结构的第二材料层进行第二化学机械研磨处理；
采用所述第二处理溶液对所述半导体初始结构的第二材料层进行第二化学机械研磨处理，直至第二材料层的研磨量和/或表面粗糙度为预定范围；其中，以所述研磨液的重量为基准，所述氧化剂的加入量为0.5wt-3wt％。
在一些实施例中，当所述半导体初始结构进行化学机械研磨处理时的材质为多晶硅或钨时，以所述研磨液的重量为基准，所述氧化剂的加入量为0.5wt％-3wt％；
当所述半导体初始结构进行化学机械研磨处理时的材质为钛时，以所述研磨液的重量为基准，所述氧化剂的加入量为0.5wt％-2.5wt％；
当所述半导体初始结构进行化学机械研磨处理时的材质为氮化钛时，以所述研磨液的重量为基准，所述氧化剂的加入量为0.5wt％-1wt％。
在一些实施例中，采用所述研磨液对半导体初始结构进行化学机械研磨处理之前，对所述研磨液进行稀释。
在一些实施例中，所述化学机械研磨处理在同一套研磨液供应系统中进行。
本公开实施例还提供了一种半导体结构，所述半导体结构通过上述实施例中的任一 项所述的方法制备。
本公开的一个或多个实施例的细节在下面的附图和描述中提出。本公开的其它特征和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本公开实施例提供的半导体结构的制备方法的流程框图；
图2为本公开实施例提供的半导体结构的制备过程的结构示意图；
图3为多晶硅材料的研磨机理示意图；
图4至图6分别为本公开实施例提供的处理溶液中过氧化氢含量对部分金属材料、部分介质材料和多晶硅材料研磨率的影响趋势图；
图7为本公开实施例提供的过氧化氢对多晶硅材料的作用机理图；
图8为过氧化氢含量对pH值的影响示意图。
具体实施方式
下面将参照附图更详细地描述本公开公开的示例性实施方式。虽然附图中显示了本公开的示例性实施方式，然而应当理解，可以以各种形式实现本公开，而不应被这里阐述的具体实施方式所限制。相反，提供这些实施方式是为了能够更透彻地理解本公开，并且能够将本公开公开的范围完整的传达给本领域的技术人员。
在下文的描述中，给出了大量具体的细节以便提供对本公开更为彻底的理解。然而，对于本领域技术人员而言显而易见的是，本公开可以无需一个或多个这些细节而得以实施。在其他的例子中，为了避免与本公开发生混淆，对于本领域公知的一些技术特征未进行描述；即，这里不描述实际实施例的全部特征，不详细描述公知的功能和结构。
在附图中，为了清楚，层、区、元件的尺寸以及其相对尺寸可能被夸大。自始至终相同附图标记表示相同的元件。
应当明白，当元件或层被称为“在……上”、“与……相邻”、“连接到”或“耦合到”其它元件或层时，其可以直接地在其它元件或层上、与之相邻、连接或耦合到其它元件或层，或者可以存在居间的元件或层。相反，当元件被称为“直接在……上”、“与……直接相邻”、“直接连接到”或“直接耦合到”其它元件或层时，则不存在居间的元件或层。应当明白，尽管可使用术语第一、第二、第三等描述各种元件、部件、区、层和/或部分，这些元件、部件、区、层和/或部分不应当被这些术语限制。这些术语仅仅用来区分一个元件、部件、区、层或部分与另一个元件、部件、区、层或部分。因此，在不脱离本公开教导之下，下面讨论的第一元件、部件、区、层或部分可表示为第二元件、部件、区、层或部分。而当讨论的第二元件、部件、区、层或部分时，并不表明本公开必然存在第一元件、部件、区、层或部分。
空间关系术语例如“在……下”、“在……下面”、“下面的”、“在……之下”、“在……之上”、“上面的”等，在这里可为了方便描述而被使用从而描述图中所示的一个元件或特征与其它元件或特征的关系。应当明白，除了图中所示的取向以外，空间关系术语意图还包括使用和操作中的器件的不同取向。例如，如果附图中的器件翻转，然后，描述为“在其它元件下面”或“在其之下”或“在其下”元件或特征将取向为在其它元件或 特征“上”。因此，示例性术语“在……下面”和“在……下”可包括上和下两个取向。器件可以另外地取向(旋转90度或其它取向)并且在此使用的空间描述语相应地被解释。
在此使用的术语的目的仅在于描述具体实施例并且不作为本公开的限制。在此使用时，单数形式的“一”、“一个”和“所述/该”也意图包括复数形式，除非上下文清楚指出另外的方式。还应明白术语“组成”和/或“包括”，当在该说明书中使用时，确定所述特征、整数、步骤、操作、元件和/或部件的存在，但不排除一个或更多其它的特征、整数、步骤、操作、元件、部件和/或组的存在或添加。在此使用时，术语“和/或”包括相关所列项目的任何及所有组合。
化学机械研磨工艺(CMP)可用于去除不希望的表面形貌和表面缺陷，诸如粗糙表面、附聚的材料、晶格损伤、划痕、以及被污染的层或材料等。随着半导体器件特种尺寸不断缩小，微量平坦化工艺在半导体制造领域中的应用越来越多。研磨液是微量平坦化工艺中的决定性要素之一，其性能直接影响被加工工件的质量以及抛光加工的效率。
此外，在半导体制造领域，涉及到需要被抛光的材质种类较多。不同种类的材料对研磨液的要求存在差异，例如钨、氮化钛和氮化硅等材料需要在酸性条件下抛光，而二氧化硅和多晶硅等需要在碱性下进行抛光。因此通常需要根据所要移除的材料，选择不同的研磨液，这导致研磨液种类繁多，且不同研磨液需要通过不同的研磨液供应系统(Slurry Dispense System，SDS)供应，进而导致抛光工艺复杂，工艺成本高。
基于此，本公开实施例提供了一种半导体结构的制备方法，如图1所示，方法包括了如下步骤：
步骤S101：提供研磨液，研磨液包括：研磨颗粒、去离子水和表面活性剂，研磨液的PH值不大于3.5；
步骤S102：采用研磨液对半导体初始结构进行化学机械研磨处理，得到半导体结构。
图2为本公开实施例提供的半导体结构的制备过程的结构示意图。如图2所示，在对半导体初始结构106进行化学机械研磨处理之后，得到半导体结构107。
本公开实施例提供的半导体结构制备方法，能够应用于微量化学机械研磨工艺中，获得平整度较高的抛光面，同时，还可以提升产品良率。此外，在本公开实施例提供的方法中，多种材质的半导体初始结构可共用一种研磨液，因此只需一种研磨液供应系统即可实现对不同材质的半导体初始结构的抛光，从而能够有效提高化学机械抛光效率，简化工艺流程，降低工艺成本。
为使本公开的上述目的、特征和优点能够更加明显易懂，下面结合具体对比实施例来进行说明。
不同材料种类对研磨液的酸碱性环境的要求存在差异，半导体结构中的常见金属材料例如钨、钛和氮化钛需要在酸性环境下研磨，而在碱性环境下无法实现研磨。然而，多晶硅、二氧化硅等材料在酸性条件下无法研磨，需要研磨液为碱性环境。这造成这些材料无法共用一种研磨液，从而需要多套研磨液供应系统，导致工艺复杂和较大成本浪费。
表1未添加表面活性剂

表2添加表面活性剂
本申请的发明人在研究中创造性发现，在酸性环境SiO2表面为负电位(negative zeta potential)，所以SiO2无研磨率，一直到强酸环境(pH<2)SiO2表面电位才会由负转正，才会有研磨速率和研磨量。由于在酸性环境下，添加非离子型表面活性剂，将SiO2表面变成更亲水。所以在pH为3.1时就有研磨率，但研磨速率不高，所以只能做SiO2微量研磨(buff slurry)。具体的结果可参见表1和表2。
目前大多数所使用的多晶硅研磨液(Polysilicon slurry)是碱性，pH越高，研磨速率越快，在酸性环境下多晶硅无法研磨。附图3所示，在增加表面活性剂105如非离子型表面活性剂后，实现在酸性环境下多晶硅的研磨。
酸性环境下对多晶硅材料的具体研磨机理示意在附图3中。可以看到，研磨液中的表面活性剂105会吸附在多晶硅材料103的表面，这能够使得多晶硅材料103表面更加亲水，那么研磨颗粒101与半导体初始结构的表面的吸附力将会增大，研磨颗粒101对半导体初始结构表面的研磨力度也会更大，从而可以提高研磨量，使得多晶硅材料103能够在酸性环境下实现研磨，缺陷201被去除形成光滑表面。
可见，本公开实施例提供的制备方法，研磨液虽然为酸性环境，但由于表面活性剂的加入，使得本公开实施例提供的研磨液不仅能够适用于钨、氮化钛和氮化硅等需要在酸性条件下抛光的材料，也能够拓展应用到对多晶硅、二氧化硅等需要在碱性下进行抛光的材料。这样，上述材料的研磨工艺可以采用一种研磨液，那么只需一套化学研磨液供应系统(Slurry Dispense System，SDS)即可对不同材质的半导体初始结构实现化学机械研磨(CMP)，这能够简化CMP工艺，降低成本。
一些优选实施例，研磨液中表面活性剂的添加量或含量为将多晶硅的接触角从77° 降低到小于40°所需的量。应当理解的是，上述表面活性剂的含量能够将多晶硅表面从疏水性改性至亲水性，从而更大程度上提高研磨效率。具体的，表面活性剂的含量可以是研磨液将多晶硅的接触角从77°降低到小于35°、30°、25°或20°所需的量。随着多晶硅材料表面的接触角越来越小，材料表面越亲水，应用于buff CMP(微量化学机械抛光工艺)时，能够有效降低半导体初始结构的表面粗糙度，提高化学机械抛光的效率，在最终化学机械研磨工艺结束时，可以获得表面较平整的半导体结构。
在一些实施例中，表面活性剂包括非离子型表面活性剂，非离子型表面活性剂的亲水亲油平衡值为9.6-16.7，包括端点值。
非离子型表面活性剂不带电荷，在溶液中具有较高的稳定性，不易受强电解质存在的影响(同时受酸、碱的影响也较小)，与其他类型表面型活性剂能混合使用，相容性好。并且在水中的溶解度会随分子中各种基团的增多而上升。相比于离子型表面活性剂，非离子型表面活性剂的结构决定了其自身具有较好的润湿、乳化、增溶等性能，能够在润湿半导体初始材料表面的同时，乳化研磨液内部组分，可同时用做增溶剂、分散剂、润湿剂。
亲水亲油平衡值范围为9.6-16.7的非离子型表面活性剂的润湿效果、分散效果与乳化效果更好，另外，也可以选择亲水亲油平衡值为9.6、10.0、12.5、13.0、15.3、15.5、16.0、16.2、16.9等的非离子型表面活性剂。
同时，引入非离子型表面活性剂的目的还包括防止研磨颗粒出现团聚现象。研磨颗粒的团聚则会造成化学机械研磨过程中各区域的化学机械研磨速率不一致，从而影响被抛光面的平坦化效率。在传统工艺中，研磨液的成分通常还包含分散剂，而本公开实施例提供的研磨液当中非离子型表面活性剂能够使研磨颗粒均匀分散在溶液当中，防止沉积，从而提升研磨效果，减化母液制备时的工艺难度并有效的降低成本。
具体的，非离子型表面活性剂可以包括但不限制于聚山梨脂、聚氧乙烯脂肪酸酯、六乙二醇单硬脂酸酯、聚氧乙烯十六烷基醚、聚氧乙烯单棕榈酸酯和聚氧乙烯单油酸酯中的至少一种。
在一些实施例中，研磨液中还包括pH值调节剂，pH调节剂使得研磨液的pH值在2.5-3.5之间(包括端点值)。在一些具体的实施例中，研磨液的pH值可以为3。PH值调节剂可以有机酸，包括但不限于磷酸、有机酸草酸及柠檬酸等。
当PH大于3.5时，由于电位影响、电化学反应、晶片表面氧化等，机械摩擦作用在化学机械抛光中占据主导地位，导致抛光效率降低，表面刮痕尺寸增大，所以本公开实施例通过将PH值调节至上述范围能够获得更优的化学机械研磨表面。
在一些实施例中，研磨颗粒包括二氧化硅颗粒，以研磨液的重量为基准，二氧化硅颗粒的含量为7.5wt％-8.5wt％(包括端点值)，比如研磨颗粒的含量可以为7.8wt％、8wt％、8.2wt％、8.4wt％等。
需要注意的是，研磨颗粒的粒径大小对CMP工艺至关重要，当研磨颗粒的粒径尺寸太大时，容易在被半导体初始结构表面形成刮伤，影响表面处理的效果，造成产品缺陷；当研磨颗粒的粒径尺寸太小时，容易导致化学机械抛光的效率低下，增加工艺成本。在实际操作中，可根据半导体初始结构的材质的种类选择合适的粒径大小。
在一具体的实施例中，研磨颗粒的粒径范围为40-60nm(包括端点值)，比如二氧化硅颗粒的粒径可以是40nm、45nm、50nm、55nm、或者58nm等。与传统工艺当中采用二氧化硅研磨液时的研磨颗粒尺寸介于100-150nm之间相比，本公开实施例在进行表面处理时，采用的研磨颗粒的粒径介于40-60nm之间，为具有较小粒径的研磨颗粒，因此其在化学机械研磨过程中对被抛光材料表面的刮伤较小，从而减少缺陷的产生。
表3多种材料的研磨速率数据表
表3展示了半导体结构中常见材料的研磨速率与相关过氧化氢浓度、PH值、固含量、研磨量需求的关系(表3中加入有满足前述预设条件的非离子型表面活性剂，未示出)。将表面粗糙度降至小于等于0.5nm时的抛光工艺属于精抛工序，能够确保晶片表面有极高的纳米形貌特征。可以看到，本公开实施例在对半导体初始结构进行化学机械处理时，对半导体初始结构的任一种材质的研磨量均不大于220nm(包括端点值)，得到的半导体结构的表面粗糙度不大于0.5nm。具体的，当半导体初始结构进行化学机械研磨处理时的材质分别为TEOS(硅酸乙酯薄膜)、BPSG(硼磷硅玻璃薄膜)、PE-SiN、LP-SiN、Poly、Ti、TiN和W时，其研磨量分别不超过100纳米、220纳米、10纳米、10纳米、50纳米、12纳米、12纳米和20纳米。另外，当半导体初始结构进行化学机械研磨处理时的材质为二氧化硅时，研磨量不大于220nm。
由表3可以看出，在未添加过氧化氢氧化剂时，多晶硅、钨、钛和氮化钛的研磨速率很低，难以满足去除表面缺陷的需求和工艺制程要求。而添加适量的氧化剂后，多晶硅、钨、钛和氮化钛的研磨速率明显提升，在工艺制程中也能获得相应的研磨量。因此，本公开实施例，当半导体初始结构进行化学机械研磨处理时的材质包括多晶硅、钨、钛和氮化钛中的至少一种时，在采用研磨液对半导体初始结构进行化学机械研磨处理之前，可以向研磨液中加入氧化剂。在一些实施例中，氧化剂包括过氧化氢。
此外，从表3还可以看到，不同材质的研磨速率与过氧化氢的比例、PH值和稀释比等参数相关。可以针对不同研磨对象的研磨量需求、粗糙度要求和研磨速率的要求，选择合适比例的过氧化氢，调整处理溶液PH及固含量，以调配出研磨速率最佳的处理溶液。另外，可以配合调整化学机械研磨时的压力、时间等参数，利用本实施例中的处理溶液实现研磨效率最大化。
以下以钨金属为例阐述添加氧化剂提升研磨量的机理，从下面的化学式可以看到，由于金属具有延展性，过氧化氢首先将钨表面氧化成三氧化钨(WO3)，与钨相比，钨的氧化物为脆性材料，与研磨颗粒接触更紧密，则比较容易被研磨颗粒摩擦除去，因此研磨速率能够大幅提升。对于与金属钨导电材料性质相似的金属材料，采用上述母液进 行表面处理的机理相通，这里不做赘述。
H2O2+2H++2e-→2H2O
W+3H2O→WO3+6H++6e-
W+4H2O→WO4 2-+8H++6e-
应当理解的是，氧化剂除过氧化氢之外，氧化剂例如还可以为本领域常用的其他各种氧化剂。氧化剂的添加量或浓度取决于所需要的研磨量，研磨量为将半导体初始结构的表面粗糙度降至小于等于0.5nm所需要的研磨厚度。即，在研磨处理之后，对半导体初始结构的研磨量不超过220nm，得到的半导体结构的表面粗糙度不大于0.5nm。
具体的，以研磨液的重量为基准，过氧化氢的加入量为0.5wt％至3wt％，例如，0.6wt％、0.9wt％、1.5wt％、2.3wt％、3.0wt％等等。需要注意的是，如图8所示，过氧化氢能够影响处理溶液的pH值，过氧化氢的含量过高，例如超过3.0wt％，处理溶液的酸碱性环境改变过大可能会影响抛光效果，因此过氧化氢的添加量需要兼顾研磨液的pH值。
附图4展示了钨、钛和氮化钛的研磨速率与氧化剂浓度的关系，可以看到，当研磨液中过氧化氢的含量为0时，化学机械抛光以机械摩擦作用为主导，研磨率极低。不同材料的研磨速率与氧化剂的浓度的关系存在差异。
具体的，如图4所示，金属钨的研磨速率与氧化剂的浓度正相关，且金属钨对氧化剂的浓度比较敏感，而钛在氧化剂的浓度超过2.5wt％后研磨率呈下降趋势，因此，当半导体初始结构进行化学机械研磨处理时的材质为钨时，以研磨液的重量为基准，氧化剂的加入量为0.5wt％-3wt％(包括端点值)。当半导体初始结构进行化学机械研磨处理时的材质为钛时，以研磨液的重量为基准，氧化剂的加入量为0.5wt％-2.5wt％(包括端点值)。
表4 TiN CMP数据信息表
如图表4所示，氮化钛作为半导体工艺中常见的金属材料，经常需要进行微量化学机械抛光工艺。结合附图4，氮化钛的研磨速率随着氧化剂浓度的增加先是提升，但当氧化剂的浓度超过0.5％之后，氮化钛的研磨速率则随着氧化剂的浓度缓慢下降，在过氧化氢的含量为0.5％时，TiN的研磨率可以达到最大190nm/min。因此，当半导体初始结构进行化学机械研磨处理时的材质为氮化钛时，以研磨液的重量为基准，氧化剂的加入量为0.5wt％-1wt％。具体的，当对氮化钛进行研磨时，一个优选的实施例可以添加0.5％的过氧化氢，以最大化对氮化钛的研磨效率。
附图6示意了多晶硅材料的研磨速率与氧化剂浓度的关系，附图7示意出了本公开 实施例提供的过氧化氢对多晶硅材料的作用机理图。根据图7和以下化学式：
H2O2→H++HO2-
Si+2HO2-→2OH-+SiO2
Si+2H2O2→SiO2+2H2O
可以看到，过氧化氢能够氧化多晶硅材料103表面，并在多晶硅材料103表面形成一层二氧化硅膜104，这使多晶硅表面的亲水性增强，研磨率得以提升。根据附图6，多晶硅的研磨率与氧化剂浓度正相关，因此，当半导体初始结构进行化学机械研磨处理时的材质为多晶硅时，以研磨液的重量为基准，氧化剂的加入量可以为0.5wt％-3wt％。
本申请的发明人在研究中发现，在含有表面活性剂的研磨液中进一步加入氧化剂，能够进一步提高多晶硅的研磨速率。
可见，过氧化氢的添加不仅实现了对金属材料的研磨，同时也能优化对多晶硅材料的研磨效果。实际工艺中，多晶硅的研磨量取决于表面缺陷的尺寸，通过本公开实施例提供的方法进行研磨之后，再经过后续刻蚀工艺，多晶硅晶圆的表面将几乎不存在缺陷。
需要注意的是，过氧化氢的添加对氮化硅、二氧化硅材料的研磨速率几乎不产生影响。具体的，参见附图5，可以看到，氮化硅、二氧化硅的材料化学稳定性高，其研磨速率基本不受pH值和氧化剂浓度等的影响。从图5可以清楚看到，含有氮化硅、二氧化硅的材料的研磨率随着过氧化氢含量的变化几乎没有变化，只有BPSG、SiO2随着过氧化氢含量的变化存在一定程度的波动，不过，波动的范围保持在10％以下，从研磨结果来看，也不会对研磨效率产生明显的影响。可见过氧化氢的添加一方面能够将研磨液的应用拓展到对金属材料的研磨，另一方面又不会影响对氮化硅、二氧化硅等绝缘材料的研磨效果。
表5处理溶液组分表
表5中呈现出了一种优选的研磨液配方，该配方对上述材料均能有较好的研磨效果。应当理解的是，由于二氧化硅和氮化硅对氧化剂的加入不敏感，而多晶硅材料在表面活性剂的存在下已能够获得一定研磨量，因此，当半导体初始结构的材质为二氧化硅、氮化硅或多晶硅材料中的一种或多种时，氧化剂的添加不是必须的，也即在对上述材质的半导体初始结构进行研磨处理之前，可以不向研磨液中加入氧化剂。但是当半导体初始结构的材质为多晶硅时，可以加入氧化剂以进一步提高研磨速率。
具体的，当半导体初始结构为复合材料时，例如半导体初始结构的材质包括第一材料层和第二材料层中的至少一种，第一材料层的材质为二氧化硅或氮化硅，第二材料层的材质为多晶硅、钨、钛或氮化钛时，本公开的制备方法，在提供研磨液之后，还包括：
向研磨液中加入氧化剂，得到第一处理溶液，第一处理溶液用于对半导体初始结构的第一材料层进行第一化学机械研磨处理；
采用第一处理溶液对半导体初始结构的第一材料层进行第一化学机械研磨处理，直至第一材料层的研磨量和/或表面粗糙度为预定范围，其中，以研磨液的重量为基准，氧化剂的加入量为0-3wt％；
向研磨液中加入氧化剂，得到第二处理溶液，第二处理溶液用于对半导体初始结
构的第二材料层进行第二化学机械研磨处理；
采用第二处理溶液对半导体初始结构的第二材料层进行第二化学机械研磨处理，直至第二材料层的研磨量和/或表面粗糙度为预定范围；其中，以研磨液的重量为基准，氧化剂的加入量为0.5wt-3wt％。
在半导体的制程工艺中，经常需要制备由金属材质，尤其是钨金属构成的连接线、电容极板、接触插塞、字线或位线等部件，常常会产生需要对钨金属和二氧化硅同时存在的表面进行研磨抛光处理的情况。因此在一具体实施例中，第一材料层为二氧化硅，第二材料层为钨，在进行研磨处理时，可先对二氧化硅进行研磨处理，达到粗糙度要求后再处理钨。钨材料表面处理对氧化剂的比例依赖较大，而二氧化硅的研磨对氧化剂的浓度依赖不大，如附图5所示，研磨液中氧化剂的含量对氧化硅、氮化硅的影响并不强烈，因此实际操作中，对第一材料层进行研磨处理时，氧化剂的加入量可以为0，即第一处理溶液中可以不添加氧化剂。
在实际的研磨工艺当中，提供研磨液可以分两步实现。首先，由研磨液供应系统先提供母液至研磨处理机台，母液包括研磨颗粒、去离子水和表面活性剂，母液的pH值不大于3.5。然后，再由研磨处理机台根据不同种类材质的半导体初始结构对氧化剂的需求在即将进行研磨处理之前通入氧化剂。氧化剂的通入量还能够实时调整，以方便对复合材质的半导体初始结构的研磨。这样，将氧化剂的提供由研磨处理机台在使用前加入，使得即使不同种类材料对氧化剂含量的需求不同，也只需要一种母液、一套SDS供应系统既可对多种材料实现化学机械研磨。
研磨处理机台包括所有的化学机械研磨机型，例如美国应用材料(AMAT)，日本荏原机械(EBARA)，中国华海清科(HHQK)等。表面处理机台内可设置氧化剂实时供应部件，用于向母液中通入氧化剂，并控制氧化剂的通入剂量和时长。
实际操作中，在对半导体初始结构进行研磨处理之前，通常还需要对研磨液进行稀释，以使得最终研磨液中各组分的含量满足需求。其中，稀释的倍数可以根据表面粗糙度、研磨量和研磨速率的需求进行调整。这里稀释的步骤可以同样利用研磨处理机台中的去离子水管来实现。前述内容中有提到，对于二氧化硅、多晶硅和氮化硅等材料，氧化剂的添加量可以为0。所以对于半导体初始结构的材质为二氧化硅或氮化硅的一种或多种时，研磨处理机台将不向母液中通入氧化剂，而是对母液稀释后即可进行研磨处理。在一实施方式中，可以在向研磨处理机台提供母液之前，由研磨液供应系统对母液通入去离子水进行稀释；在另一实施例中，可以在向研磨处理机台提供母液之后，由研磨处理机台中的水管对母液通入去离子水实现稀释。这里，稀释的比例根据实际半导体初始结构的研磨率需求确定，在一具体的实施例中，以研磨液的重量为基准，去离子水的含量为90.5wt％-92wt％，包括端点值，比如91.2wt％、91.5wt％、91.8wt％等。
需要注意的是，在向母液中加入过氧化氢再经稀释后，所得研磨液的pH值范围在2.5-3.5之间，包括端点值，也可以在2.6-2.8之间、2.8-3.0之间，又或者3.0-3.2之间。而且，本申请的研磨液中各组分的含量之和为100％。
综上所述，在对半导体初始结构进行化学机械研磨处理时，半导体初始结构材质可以是二氧化硅、氮化硅、多晶硅、钨、钛和氮化钛中的一种或至少两种。
在一些应用器件中，多晶硅常作为衬底半导体材料使用，钨、氮化钛和钛通常用于连接线、电容极板、接触插塞、字线或位线等部件，也会产生需要对钨等金属和多晶硅同时存在的表面进行研磨抛光处理的情况。因此在一些具体实施例中，半导体初始结构材质为钨、氮化钛或钛中的一种，以及多晶硅。在进行研磨处理时，可以先对钨、氮化钛或钛进行研磨处理，达到粗糙度要求后再处理多晶硅材料。多晶硅、钨、钛和氮化钛材料对氧化剂的比例依赖性各有不同，且多晶硅在不添加氧化剂的情况下也可以获得一定的研磨量，因此在实际操作中，可以根据半导体初始结构的研磨量需求，调节研磨液中氧化剂的含量，从而实现对该半导体初始结构的化学机械研磨处理。
当然，在对半导体初始结构进行化学机械研磨处理时，半导体初始结构材质也可以是氮化硅、多晶硅、钨、钛和氮化钛中的至少一种、与二氧化硅的组成。
在实际半导体工艺中，在浅槽沟道隔离抛光技术(STI CMP)中，氮化硅作为后续刻蚀和化学机械抛光的阻挡层，二氧化硅用于填充沟槽，利用化学机械抛光将填充后的表面进行平坦化，不可避免的存在二氧化硅材料研磨后会有一定量氮化硅材料的研磨，才能使得化学机械抛光后的表面较为平整。因此，在一其他实施例中，半导体初始结构材质为氮化硅和二氧化硅。
需要说明的是，上述半导体初始结构材质的举例并非对本公开半导体初始结构材质的限制，实际上，半导体初始结构的材质种类不限于两种，可以为任意能够基于本公开研磨液实现研磨的材料。
随着半导体器件特种尺寸不断缩小，传统微米级的研磨工艺逐渐难以满足微量的研磨需求，而本公开提供的方法能够实现精抛，且其研磨量均能够控制在220纳米以下，部分材质的研磨量可以控制在10纳米以下，因此本公开提供的方法能够较好地适用于微量研磨工艺，提高研磨精细度和研磨质量。
本公开实施例还提供了一种半导体结构，半导体结构采用前述任意本公开实施例提供的方法制备。半导体结构例如包括但不限于DRAM结构或其他半导体器件，所涉及的研磨对象与上述任一实施例中提及的材料相同或类似时均可采用本公开实施例的方法进行操作。
综上所述，本公开实施例提供的半导体结构制备方法，能够应用于微量化学机械抛光工艺中，获得较高的平坦化效率、较高平整度的抛光面，同时，还可以提升产品良率。此外，在本公开实施例提供的方法中，多种材料可共用一种研磨液，因此只需一种研磨液供应系统即可实现不同材料的抛光，从而在简化工艺流程的同时降低成本。
需要说明的是，本公开提供的半导体结构的制备方法及半导体结构属于同一构思；各实施例所记载的技术方案中各技术特征之间，在不冲突的情况下，可以任意组合。
以上，仅为本公开的较佳实施例而已，并非用于限定本公开的保护范围，凡在本公开的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本公开的保护范围之内。
工业实用性
本公开实施例提供的半导体结构的制备方法，能够应用于微量化学机械研磨工艺中，能够有效减少表面缺陷，降低表面粗糙度，获得平整度较高的抛光面，提高化学机械研磨效果，还可以提升产品良率。更重要的是，本公开实施例提供的研磨液能够实现对多种材料进行表面处理，针对不同抛光对象，多种材质的半导体初始结构可共用一种研磨液，因此只需一套化学研磨液供应系统(Slurry Dispense System，SDS)即可对不同材质的半导体初始结构实现化学机械研磨(CMP)，从而简化CMP工艺，降低成本。

Claims (18)

  1. 一种半导体结构的制备方法，包括：
    提供研磨液，所述研磨液包括：研磨颗粒(101)、去离子水和表面活性剂(105)，所述研磨液的pH值不大于3.5；
    采用所述研磨液对半导体初始结构(106)进行化学机械研磨处理，得到半导体结构(107)。
  2. 根据权利要求1所述的方法，其中，
    所述研磨液还包括pH值调节剂，所述研磨液的pH值为2.5-3.5。
  3. 根据权利要求1或2所述的方法，其中，
    所述半导体初始结构(106)进行化学机械研磨处理时的材质包括二氧化硅、氮化硅、多晶硅、钨、钛和氮化钛中的一种或至少两种；或者
    所述半导体初始结构(106)进行化学机械研磨处理时的材质包括氮化硅、多晶硅、钨、钛和氮化钛中的至少一种、以及二氧化硅。
  4. 根据权利要求3所述的方法，其中，采用所述研磨液对所述半导体初始结构(106)进行化学机械研磨处理，包括：
    对所述半导体初始结构(106)的任一种材质的研磨量不大于220nm；和/或
    得到的所述半导体结构(107)的表面粗糙度不大于0.5nm。
  5. 根据权利要求4所述的方法，其中，所述半导体初始结构(106)进行化学机械研磨处理时的材质为二氧化硅时，所述研磨量不大于220nm；和/或
    所述半导体初始结构(106)进行化学机械研磨处理时的材质为氮化硅时，所述研磨量不大于10nm；和/或
    所述半导体初始结构(106)进行化学机械研磨处理时的材质为多晶硅时，所述研磨量不大于50nm；和/或
    所述半导体初始结构(106)进行化学机械研磨处理时的材质为钨时，所述研磨量不大于20nm；和/或
    所述半导体初始结构(106)进行化学机械研磨处理时的材质为钛或氮化钛时，所述研磨量不大于12nm。
  6. 根据权利要求1-5中任一项所述的方法，其中，所述研磨颗粒(101)包括二氧化硅颗粒，以所述研磨液的重量为基准，所述二氧化硅颗粒的含量为7.5wt％-8.5wt％。
  7. 根据权利要求1-6中任一项所述的方法，其中，所述研磨颗粒(101)的粒径为40-60nm。
  8. 根据权利要求1-7中任一项所述的方法，其中，以所述研磨液的重量为基准，所述去离子水的含量为90.5wt％-92wt％。
  9. 根据权利要求3-8中任一项所述的方法，其中，
    所述研磨液中所述表面活性剂(105)的含量为所述研磨液将多晶硅的接触角从77°降低到小于40°所需的量。
  10. 根据权利要求1-9中任一项所述的方法，其中，所述表面活性剂(105)包括非离子型表面活性剂，所述非离子型表面活性剂的亲水亲油平衡值为9.6-16.7。
  11. 根据权利要求10所述的方法，其中，所述非离子型表面活性剂包括聚山梨脂、聚氧乙烯脂肪酸酯、六乙二醇单硬脂酸酯、聚氧乙烯十六烷基醚、聚氧乙烯单棕榈酸酯和聚氧乙烯单油酸酯中的至少一种。
  12. 根据权利要求1-11中任一项所述的方法，其中，当所述半导体初始结构(106) 进行化学机械研磨处理时的材质包括多晶硅、钨、钛和氮化钛中的至少一种时，在采用所述研磨液对半导体初始结构(106)进行化学机械研磨处理之前，向所述研磨液中加入氧化剂。
  13. 根据权利要求12所述的方法，其中，所述氧化剂包括过氧化氢，以所述研磨液的重量为基准，所述过氧化氢的加入量为0.5wt％至3wt％。
  14. 根据权利要求5所述的方法，其中，所述半导体初始结构(106)进行化学机械研磨处理时的材质包括第一材料层和第二材料层中的至少一种，所述第一材料层的材质为氧化硅或氮化硅，所述第二材料层的材质为多晶硅、钨、钛或氮化钛，提供所述研磨液之后，所述方法还包括：
    向所述研磨液中加入氧化剂，得到第一处理溶液，所述第一处理溶液用于对所述半导体初始结构(106)的第一材料层进行第一化学机械研磨处理；
    采用所述第一处理溶液对所述半导体初始结构(106)的第一材料层进行第一化学机械研磨处理，直至第一材料层的研磨量和/或表面粗糙度为预定范围，其中，以所述研磨液的重量为基准，所述氧化剂的加入量为0-3wt％；
    向所述研磨液中加入氧化剂，得到第二处理溶液，所述第二处理溶液用于对所述半导体初始结构(106)的第二材料层进行第二化学机械研磨处理；
    采用所述第二处理溶液对所述半导体初始结构(106)的第二材料层进行第二化学机械研磨处理，直至第二材料层的研磨量和/或表面粗糙度为预定范围；其中，以所述研磨液的重量为基准，所述氧化剂的加入量为0.5wt-3wt％。
  15. 根据权利要求12-14中任一项所述的方法，其中，当所述半导体初始结构(106)进行化学机械研磨处理时的材质为多晶硅或钨时，以所述研磨液的重量为基准，所述氧化剂的加入量为0.5wt％-3wt％；
    当所述半导体初始结构(106)进行化学机械研磨处理时的材质为钛时，以所述研磨液的重量为基准，所述氧化剂的加入量为0.5wt％-2.5wt％；
    当所述半导体初始结构(106)进行化学机械研磨处理时的材质为氮化钛时，以所述研磨液的重量为基准，所述氧化剂的加入量为0.5wt％-1wt％。
  16. 根据权利要求1-15中任一项所述的方法，其中，采用所述研磨液对半导体初始结构(106)进行化学机械研磨处理之前，对所述研磨液进行稀释。
  17. 根据权利要求1-16中任一项所述的方法，其中，所述化学机械研磨处理在同一套研磨液供应系统中进行。
  18. 一种半导体结构，通过权利要求1-17中任一项所述的方法制备。
PCT/CN2023/094783 2023-03-03 2023-05-17 一种半导体结构的制备方法及半导体结构 Ceased WO2024183155A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202310218737.XA CN118617296A (zh) 2023-03-03 2023-03-03 一种半导体结构的制备方法及半导体结构
CN202310218737.X 2023-03-03

Publications (1)

Publication Number Publication Date
WO2024183155A1 true WO2024183155A1 (zh) 2024-09-12

Family

ID=92596524

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2023/094783 Ceased WO2024183155A1 (zh) 2023-03-03 2023-05-17 一种半导体结构的制备方法及半导体结构

Country Status (2)

Country Link
CN (1) CN118617296A (zh)
WO (1) WO2024183155A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119823717A (zh) * 2024-12-27 2025-04-15 广电计量检测集团股份有限公司 一种研磨用组合物及其在去除半导体芯片氮化钛层的应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW527626B (en) * 2001-02-07 2003-04-11 Eternal Chemical Co Ltd Chemical mechanical polishing composition
US20100243471A1 (en) * 2007-10-31 2010-09-30 3M Innovative Properties Company Composition, method and process for polishing a wafer
JP2014018923A (ja) * 2012-07-19 2014-02-03 Hitachi Chemical Co Ltd Ｃｍｐ用研磨液、ｃｍｐ用スラリー及び研磨方法
CN111378382A (zh) * 2018-12-29 2020-07-07 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
CN113874464A (zh) * 2019-06-04 2021-12-31 昭和电工材料株式会社 研磨液、分散体、研磨液的制造方法及研磨方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW527626B (en) * 2001-02-07 2003-04-11 Eternal Chemical Co Ltd Chemical mechanical polishing composition
US20100243471A1 (en) * 2007-10-31 2010-09-30 3M Innovative Properties Company Composition, method and process for polishing a wafer
CN101910353A (zh) * 2007-10-31 2010-12-08 3M创新有限公司 用于打磨晶片的组合物、方法和工艺
JP2014018923A (ja) * 2012-07-19 2014-02-03 Hitachi Chemical Co Ltd Ｃｍｐ用研磨液、ｃｍｐ用スラリー及び研磨方法
CN111378382A (zh) * 2018-12-29 2020-07-07 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
CN113874464A (zh) * 2019-06-04 2021-12-31 昭和电工材料株式会社 研磨液、分散体、研磨液的制造方法及研磨方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119823717A (zh) * 2024-12-27 2025-04-15 广电计量检测集团股份有限公司 一种研磨用组合物及其在去除半导体芯片氮化钛层的应用

Also Published As

Publication number Publication date
CN118617296A (zh) 2024-09-10

Similar Documents

Publication Publication Date Title
CN1750239B (zh) 基于氧化铈的抛光工艺和氧化铈基浆料
CN1849379B (zh) 用于化学机械抛光的磨料颗粒
TW512169B (en) Aqueous chemical mechanical polishing composition, slurry and method for chemical-mechnical polishing of a substrate
CN100526409C (zh) 浆料成分及利用其的cmp方法
TW575645B (en) Acidic polishing slurry for the chemical-mechanical polishing of SiO2 isolation layers
US6364744B1 (en) CMP system and slurry for polishing semiconductor wafers and related method
TW200819524A (en) Chemical mechanical polishing slurry and method for chemical mechanical planarization
CN104066807B (zh) 研磨浆料及使用其的研磨方法
WO2018120809A1 (zh) 一种用于阻挡层平坦化的化学机械抛光液
WO2018120808A1 (zh) 一种用于阻挡层的化学机械抛光液
CN101077961B (zh) 用于精细表面平整处理的抛光液及其使用方法
Lee et al. Effect of diluted colloidal silica slurry mixed with ceria abrasives on CMP characteristic
CN111944429A (zh) 化学机械抛光组合物以及方法
CN111378382B (zh) 一种化学机械抛光液及其应用
WO2024183155A1 (zh) 一种半导体结构的制备方法及半导体结构
KR20030002479A (ko) 옥사이드에 선택비를 갖는 나이트라이드 화학적 기계적연마용 슬러리
KR20040060217A (ko) 나이트라이드용 ｃｍｐ 슬러리
WO2013107279A1 (zh) 一种碱性化学机械抛光液
WO2019129107A1 (zh) 一种化学机械抛光液
JP2016178294A (ja) 研磨スラリー及びこれを用いた基板の研磨方法
TWI855208B (zh) 化學機械拋光液及其在銅拋光中的應用
CN118530666B (zh) 一种化学机械抛光液
CN111378367A (zh) 一种化学机械抛光液
CN101535441B (zh) 化学机械抛光浆料组合物、及其制备方法和应用方法
CN116731613A (zh) 一种二氧化硅介电层化学机械抛光液及其应用

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23925869

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 23925869

Country of ref document: EP

Kind code of ref document: A1