WO2024154566A1

WO2024154566A1 - Semiconductor device

Info

Publication number: WO2024154566A1
Application number: PCT/JP2023/046940
Authority: WO
Inventors: 昂樹中野; 光俊齊藤
Original assignee: ローム株式会社
Priority date: 2023-01-16
Filing date: 2023-12-27
Publication date: 2024-07-25

Abstract

This semiconductor device comprises: a switching element in which a part between a first electrode and a second electrode is controlled on/off by applying a drive voltage between a third electrode and the second electrode in a state where a potential difference is set between the first electrode and the second electrode; a first terminal conductive to the first electrode; a second terminal conductive to the second electrode; a third terminal conductive to the third electrode; and a sealing resin. The first terminal, the second terminal, and the third terminal each include portions projected from the sealing resin. The first terminal, the second terminal, and the third terminal are spaced apart from each other in a second direction. The second terminal is positioned opposite to the first terminal relative to the third terminal in the second direction.

Description

Semiconductor Device

This disclosure relates to a semiconductor device.

Various configurations have been proposed for semiconductor devices equipped with semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element, multiple leads, and sealing resin. The semiconductor element is mounted on a first lead, and a collector electrode on the back surface is conductive to the first lead. An emitter electrode on the main surface of the semiconductor element is conductive to a third lead. The sealing resin covers each of the multiple leads and the semiconductor element. The first lead has a first terminal protruding from the sealing resin, and the third lead has a third terminal protruding from the sealing resin. When a high voltage (e.g., several thousand volts) is applied between the first and third terminals of the semiconductor device, a discharge occurs on the surface of the sealing resin between the first and third terminals, and the first and third terminals may be short-circuited.

JP 2018-14490 A

An object of the present disclosure is to provide a semiconductor device that is an improvement over conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can withstand a high voltage.

The semiconductor device provided by the first aspect of the present disclosure includes a switching element having a first electrode, a second electrode, and a third electrode, and in which the first electrode and the second electrode are controlled to be turned on/off by applying a drive voltage between the third electrode and the second electrode while a potential difference is applied between the first electrode and the second electrode, a base on which the switching element is mounted, a first lead having a first terminal that is conductive with the first electrode, a second lead having a second terminal that is conductive with the second electrode, a third lead having a third terminal that is conductive with the third electrode, and a sealing resin that covers the switching element and a portion of each of the first terminal, the second terminal, and the third terminal. The first terminal, the second terminal, and the third terminal each include a portion that protrudes from the sealing resin to one side in a first direction perpendicular to the thickness direction of the base. The first terminal, the second terminal, and the third terminal are arranged spaced apart from each other in a second direction perpendicular to both the thickness direction and the first direction. The second terminal is located on the opposite side of the third terminal from the first terminal in the second direction.

The above configuration allows the semiconductor device to withstand high voltages.

Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure, seen through a sealing resin. FIG. 3 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 4 is a front view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 5 is a cross-sectional view taken along line VV in FIG. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. FIG. 8 is a perspective view showing a semiconductor device according to a first modification of the first embodiment. FIG. 9 is a bottom view showing a semiconductor device according to a first modification of the first embodiment. FIG. 10 is a cross-sectional view showing a semiconductor device according to a first modification of the first embodiment. FIG. 11 is a front view showing a semiconductor device according to a first modification of the first embodiment. FIG. 12 is a perspective view showing a semiconductor device according to a second modification of the first embodiment. FIG. 13 is a plan view showing a semiconductor device according to a second modification of the first embodiment. FIG. 14 is a front view showing a semiconductor device according to a second modification of the first embodiment. FIG. 15 is a perspective view showing a semiconductor device according to a third modification of the first embodiment. FIG. 16 is a plan view showing a semiconductor device according to a third modification of the first embodiment, seen through a sealing resin. FIG. 17 is a front view showing a semiconductor device according to a third modification of the first embodiment. FIG. 18 is a plan view showing a semiconductor device according to a fourth modification of the first embodiment, seen through a sealing resin. FIG. 19 is a front view showing a semiconductor device according to a fourth modification of the first embodiment. FIG. 20 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure. FIG. 21 is a plan view showing the semiconductor device according to the second embodiment of the present disclosure, seen through the sealing resin. FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. FIG. 24 is a perspective view showing a semiconductor device according to a third embodiment of the present disclosure. FIG. 25 is a plan view showing a semiconductor device according to a third embodiment of the present disclosure, seen through a sealing resin. FIG. 26 is a front view showing a semiconductor device according to a third embodiment of the present disclosure. FIG. 27 is a plan view showing a semiconductor device according to a first modification of the third embodiment, seen through a sealing resin. FIG. 28 is a front view showing a semiconductor device according to a first modification of the third embodiment.

Below, a preferred embodiment of this disclosure will be described in detail with reference to the drawings.

The terms "first," "second," "third," etc., used in this disclosure are used merely as labels and are not necessarily intended to assign any order to their objects.

In this disclosure, "an object A is formed on an object B" and "an object A is formed on an object B" include "an object A is formed directly on an object B" and "an object A is formed on an object B with another object interposed between the object A and the object B" unless otherwise specified. Similarly, "an object A is disposed on an object B" and "an object A is disposed on an object B" include "an object A is disposed directly on an object B" and "an object A is disposed on an object B with another object interposed between the object A and the object B" unless otherwise specified. Similarly, "an object A is located on an object B" includes "an object A is located on an object B in contact with an object B" and "an object A is located on an object B with another object interposed between the object A and the object B" unless otherwise specified. Unless otherwise specified, "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." In this disclosure, "a surface A faces in direction B (one side or the other side of direction B)" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

First embodiment:
1 to 7, a semiconductor device A10 according to a first embodiment of the present disclosure will be described. The semiconductor device A10 includes a first lead 1, a second lead 2, a third lead 3, a switching element 6, a first conductive member 71, a second conductive member 72, and a sealing resin 8.

FIG. 1 is a perspective view of the semiconductor device A10. FIG. 2 is a plan view of the semiconductor device A10, seen through the sealing resin 8. FIG. 3 is a bottom view of the semiconductor device A10. FIG. 4 is a front view of the semiconductor device A10. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 2. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. In FIG. 2, the outline of the sealing resin 8 seen through is shown by an imaginary line (double-dashed line).

The semiconductor device A10 shown in these figures is a device that is mounted on the circuit boards of various devices. The uses and functions of the semiconductor device A10 are not limited. The package format of the semiconductor device A10 is a SIP (Single Inline Package). The package format of the semiconductor device A10 is not limited to SIP.

In describing the semiconductor device A10, three mutually orthogonal directions (x direction, y direction, z direction) will be referred to as appropriate. As an example, in the following, the x direction will be referred to as the "first direction x", the y direction as the "second direction y", and the z direction as the "thickness direction z", but the present disclosure is not limited to this. The thickness direction z corresponds to the thickness direction of the semiconductor device A10 (more specifically, for example, the sealing resin 8). The first direction x corresponds, for example, to the up-down direction in FIG. 2. The second direction y corresponds, for example, to the left-right direction in FIG. 2. When viewed in the thickness direction z (also referred to as a "planar view"), the shape of the sealing resin 8 is rectangular. There are no particular limitations on the dimensions of the semiconductor device A10.

The first lead 1, the second lead 2, and the third lead 3 are electrically connected to the switching element 6, and form a conductive path between the switching element 6 and the circuit wiring when the semiconductor device A10 is mounted on a circuit board. The first lead 1, the second lead 2, and the third lead 3 are formed, for example, by subjecting a metal plate (lead frame) to processes such as punching and bending. The materials constituting the first lead 1, the second lead 2, and the third lead 3 are not particularly limited, and may be, for example, either Cu (copper) or Ni (nickel), or an alloy thereof.

The first lead 1 supports the switching element 6 and is electrically connected to the switching element 6. The first lead 1 has a base 110 and a first terminal 120.

The base 110 is a portion on which the switching element 6 is mounted, and is rectangular (or approximately rectangular) when viewed in the thickness direction z. The base 110 has a first main surface 111, a first back surface 112, a base end surface 114, and a base through hole 113. The first main surface 111 and the first back surface 112 face opposite each other in the thickness direction z. The first main surface 111 faces the z1 side in the thickness direction z. The switching element 6 is bonded to the first main surface 111. The first back surface 112 faces the z2 side in the thickness direction z. The first back surface 112 is exposed from the sealing resin 8 and serves as a back surface terminal. The base end surface 114 is connected to the first main surface 111 and the first back surface 112, and faces the x1 side in the first direction x. As shown in FIG. 7, the base through-hole 113 is a hole that extends parallel to the thickness direction z from the first main surface 111 to the first back surface 112. The base through-hole 113 is disposed in the center of the base 110 in the second direction y and toward the x2 side in the first direction x (toward the upper side in FIGS. 2 and 3), and is circular when viewed in the thickness direction z. The base through-hole 113 is separated from the switching element 6 when viewed in the thickness direction z. The position and shape of the base through-hole 113 are not limited.

The first terminal 120 is connected to the base 110 and is electrically connected to the switching element 6 via the base 110. As shown in FIG. 2, the first dimension L1, which is the width dimension (dimension in the second direction y) of the first terminal 120, is smaller than the width dimension (dimension in the second direction y) of the base 110. In the illustrated example, the plate thickness direction of the first terminal 120 coincides with the thickness direction z, and the second direction y perpendicular to both the plate thickness direction (thickness direction z) and the first direction x corresponds to the width direction of the first terminal 120. The first terminal 120 has a first surface 121 and a second surface 122. The first surface 121 and the second surface 122 are surfaces facing the plate thickness direction of the first terminal 120 and facing opposite to each other. In this embodiment, as shown in FIG. 5, the first surface 121 faces the z1 side of the thickness direction z, and the second surface 122 faces the z2 side of the thickness direction z. As shown in FIG. 5, the thickness dimension (dimension in thickness direction z) of the first terminal 120 is smaller than the thickness dimension (dimension in thickness direction z) of the base 110. In other words, the thickness dimension of the base 110 is larger than the thickness dimension of the first terminal 120.

The first terminal 120 is connected to the base end surface 114 of the base 110. More specifically, the first terminal 120 is connected to the base end surface 114 (and by extension the portion 110) at the end of the base end surface 114 on the y1 side in the second direction y as shown in FIG. 2, and at the end of the base end surface 114 on the z1 side in the thickness direction z as shown in FIG. 5. The first terminal 120 extends in the first direction x and includes a portion that protrudes from the sealing resin 8. As shown in FIG. 2, the first terminal 120 includes a base end portion and a tip end portion. The base end portion extends from a position connected to the base 110 to a position that protrudes a short distance beyond the sealing resin 8. The base end portion has a larger width dimension than the tip end portion.

In the semiconductor device A10, the first terminal 120 includes a first straight portion 123 and a first connecting portion 124. The first straight portion 123 is a portion that extends straight along the first direction x, and includes a portion covered with the sealing resin 8 and a portion that protrudes from the sealing resin 8. The first connecting portion 124 is a portion that connects the first straight portion 123 and the base 110, and is connected to the first straight portion 123 and the base 110. As shown in FIG. 5, the first connecting portion 124 is entirely covered with the sealing resin 8 and is inclined with respect to the base 110 and the first straight portion 123. The first straight portion 123 has a first surface 121 (a surface facing the z1 side in the thickness direction z) that faces the same side as the first main surface 111, and is located on the z1 side in the thickness direction z with respect to the first main surface 111. Therefore, the first connecting portion 124 is inclined so that the x1 side in the first direction x is closer to the z1 side in the thickness direction z. The shape of the first lead 1 is not limited to the above. For example, the base 110 may have a back side recess around the first back surface 112 that is recessed from the first back surface 112 to the first main surface 111 and covered by the sealing resin 8 to prevent the first lead 1 from falling out of the sealing resin 8 to the z2 side in the thickness direction z.

The third lead 3 is electrically connected to the switching element 6. The third lead 3 is disposed at a distance from the first lead 1. As shown in FIG. 2, the third lead 3 is disposed on the x1 side in the first direction x of the base 110 of the first lead 1, and at the center of the base 110 in the second direction y. The third lead 3 is disposed on the y2 side in the second direction y with respect to the first terminal 120. The third lead 3 includes a third pad 310 and a third terminal 320.

The third pad 310 is the portion to which the second conductive member 72 is bonded, and has a rectangular shape (or a substantially rectangular shape) that is longer in the second direction y when viewed in the thickness direction z. As shown in Figures 2 and 7, the third pad 310 has a pad main surface 311 and a pad back surface 312. The pad main surface 311 and the pad back surface 312 face opposite each other in the thickness direction z. The pad main surface 311 faces the z1 side in the thickness direction z. An end of the second conductive member 72 is bonded to the pad main surface 311. The pad back surface 312 faces the z2 side in the thickness direction z. The third pad 310 is entirely covered with sealing resin 8.

The third terminal 320 is connected to the third pad 310 and is electrically connected to the switching element 6 via the third pad 310 and the second conductive member 72. As shown in FIG. 2, the width dimension (dimension in the second direction y) of the third terminal 320 is smaller than the width dimension (dimension in the second direction y) of the third pad 310. As shown in FIG. 7, the thickness dimension (dimension in the thickness direction z) of the third terminal 320 is the same as the thickness dimension (dimension in the thickness direction z) of the third pad 310 and is the same as the thickness dimension of the first terminal 120. As shown in FIG. 2, the third terminal 320 is disposed on the x1 side of the third pad 310 in the first direction x and in the center in the second direction y. The third terminal 320 is located on the y2 side of the first terminal 120 in the second direction y.

The third terminal 320 has a fifth surface 321 and a sixth surface 322. The fifth surface 321 and the sixth surface 322 are surfaces that face in the plate thickness direction of the third terminal 320 and face in opposite directions to each other. As shown in FIG. 7, the fifth surface 321 faces the z1 side in the thickness direction z, and the sixth surface 322 faces the z2 side in the thickness direction z. The third terminal 320 extends in the first direction x and includes a portion that protrudes from the sealing resin 8. The third terminal 320 has a width dimension larger than that of the tip side portion from the position connected to the third pad 310 to a position protruding a short distance beyond the sealing resin 8. The shape of the third lead 3 is not limited to the above.

The second lead 2 is electrically connected to the switching element 6. The second lead 2 is disposed at a distance from the first lead 1 and the second lead 2. As shown in FIG. 2, the second lead 2 is disposed on the x1 side in the first direction x of the base 110 of the first lead 1, at a position corresponding to the end of the first terminal 120 on the y2 side in the second direction y in the second direction y. In this embodiment, as shown in FIGS. 4, 6, and 7, the second lead 2 and the third lead 3 are located at the same position in the thickness direction z. The second lead 2 includes a second pad 210 and a second terminal 220.

The second pad 210 is the portion to which the first conductive member 71 is bonded, and has a rectangular shape (or a substantially rectangular shape) that is long in the second direction y when viewed in the thickness direction z. As shown in Figures 2 and 6, the second pad 210 has a pad main surface 211 and a pad back surface 212. The pad main surface 211 and the pad back surface 212 face opposite each other in the thickness direction z. The pad main surface 211 faces the z1 side in the thickness direction z. An end of the first conductive member 71 is bonded to the pad main surface 211. The pad back surface 212 faces the z2 side in the thickness direction z. The second pad 210 is entirely covered with sealing resin 8.

The second terminal 220 is connected to the second pad 210 and is electrically connected to the switching element 6 via the second pad 210 and the first conductive member 71. As shown in FIG. 2, the width dimension (dimension in the second direction y) of the second terminal 220 is smaller than the width dimension (dimension in the second direction y) of the second pad 210. As shown in FIG. 6, the thickness dimension (dimension in the thickness direction z) of the second terminal 220 is the same as the thickness dimension (dimension in the thickness direction z) of the second pad 210 and is the same as the thickness dimension of the first terminal 120. As shown in FIG. 2, the second terminal 220 is disposed on the x1 side of the first direction x and in the center of the second direction y with respect to the second pad 210. The second terminal 220 is located on the y2 side of the second direction y with respect to the third terminal 320 in the second direction y. The second terminal 220 is located on the opposite side of the first terminal 120 with respect to the third terminal 320 in the second direction y.

The second terminal 220 has a third surface 221 and a fourth surface 222. The third surface 221 and the fourth surface 222 are surfaces that face the plate thickness direction of the second terminal 220 and face opposite each other. As shown in FIG. 6, the third surface 221 faces the z1 side in the thickness direction z, and the fourth surface 222 faces the z2 side in the thickness direction z. The second terminal 220 extends in the first direction x and includes a portion that protrudes from the sealing resin 8. The second terminal 220 has a width dimension larger than that of the tip side portion from the position connected to the second pad 210 to a position protruding a short distance beyond the sealing resin 8. The shape of the second lead 2 is not limited to the above.

2, the portions of the first terminal 120, the second terminal 220, and the third terminal 320 exposed from the sealing resin 8 have the same shape. The tip of the first terminal 120 (the end on the x1 side in the first direction x opposite the portion connected to the base 110), the tip of the second terminal 220 (the end on the x1 side in the first direction x opposite the portion connected to the second pad 210), and the tip of the third terminal 320 (the end on the x1 side in the first direction x opposite the portion connected to the third pad 310) are in the same position in the first direction x.

As described above with reference to FIG. 2, the second terminal 220 is located on the opposite side of the third terminal 320 from the first terminal 120 in the second direction y. The first distance D1, which is the distance between the first terminal 120 and the second terminal 220 in the second direction y, is larger than the width dimension (first dimension L1) of the first terminal 120. For example, the distance (first distance D1) between the first terminal 120 and the second terminal 220 in the second direction y is 3 to 11 times the width dimension (first dimension L1) of the first terminal 120.

An outer plating layer made of, for example, an alloy mainly composed of Sn may be formed on the portions of the first lead 1, the second lead 2, and the third lead 3 exposed from the sealing resin 8. An inner plating layer made of, for example, Ag may be formed on the region of the first main surface 111 of the first lead 1 to which the switching element 6 is bonded, the region of the pad main surface 211 of the second lead 2 to which the first conductive member 71 is bonded, and the region of the pad main surface 311 of the third lead 3 to which the second conductive member 72 is bonded.

The switching element 6 is an element that realizes the switching function to be performed by the semiconductor device A10. There is no particular limitation on the type of the switching element 6. In this embodiment, the switching element 6 is a transistor such as a metal-oxide-semiconductor field-effect transistor (MOSFET). The switching element 6 includes an element body 60, a first electrode 63, a second electrode 64, and a third electrode 65.

The element body 60 is plate-shaped and rectangular when viewed in the thickness direction z. The element body 60 is made of a semiconductor material, and in this embodiment, is made of Si (silicon). The material of the element body 60 is not limited, and may be other materials such as SiC (silicon carbide) and GaN (gallium nitride). The element body 60 has an element main surface 61 and an element back surface 62. The element main surface 61 and the element back surface 62 face opposite each other in the thickness direction z. The element main surface 61 faces the z1 side in the thickness direction z. The element back surface 62 faces the z2 side in the thickness direction z. The second electrode 64 and the third electrode 65 are arranged on the element main surface 61. The first electrode 63 is arranged on the element back surface 62. In this embodiment, the first electrode 63 is a drain electrode, the second electrode 64 is a source electrode, and the third electrode 65 is a gate electrode. The second electrode 64 is larger than the third electrode 65. The switching element 6 applies a driving voltage to the third electrode 65 (gate electrode) and the second electrode 64 (source electrode) while applying a potential difference between the first electrode 63 (drain electrode) and the second electrode 64 (source electrode), thereby controlling the on/off of the first electrode 63 (drain electrode) and the second electrode 64 (source electrode).

As shown in FIG. 2, the switching element 6 is mounted at the center of the first main surface 111 in the second direction y, toward the x1 side in the first direction x. The switching element 6 is disposed at a position that does not overlap the base through-hole 113 when viewed in the thickness direction z. As shown in FIG. 6 and FIG. 7, the switching element 6 is bonded to the first main surface 111 via a bonding material 69, with the element back surface 62 facing the first main surface 111. In this embodiment, the bonding material 69 is a conductive bonding material, such as solder. The bonding material 69 may be other conductive bonding materials such as silver paste and sintered silver bonding material. The first electrode 63 of the switching element 6 is bonded to the first main surface 111 by the bonding material 69, and is electrically connected to the first lead 1.

The first conductive member 71 is joined to the second electrode 64 of the switching element 6 and the pad main surface 211 of the second lead 2. The second electrode 64 of the switching element 6 is electrically connected to the second lead 2. The second conductive member 72 is joined to the third electrode 65 of the switching element 6 and the pad main surface 311 of the third lead 3. The third electrode 65 of the switching element 6 is electrically connected to the third lead 3. In this embodiment, the first conductive member 71 and the second conductive member 72 are, for example, wires (bonding wires). The material, thickness, and number of the first conductive member 71 and the second conductive member 72 are not limited. In the illustrated example, multiple (three) first conductive members 71 are joined to the second electrode 64 and the pad main surface 211. The first conductive member 71 connecting the switching element 6 and the second lead 2, and the second conductive member 72 connecting the switching element 6 and the third lead 3 may be made of a conductive material other than a wire (such as a metal plate or a metal ribbon).

The first terminal 120 of the first lead 1, which is conductive to the first electrode 63, functions as the drain terminal of the semiconductor device A10, the second terminal 220 of the second lead 2, which is conductive to the second electrode 64, functions as the source terminal of the semiconductor device A10, and the third terminal 320 of the third lead 3, which is conductive to the third electrode 65, functions as the gate terminal of the semiconductor device A10. A high voltage is applied from the outside between the first terminal 120 (drain terminal) and the second terminal 220 (source terminal). The potential difference between the first terminal 120 (drain terminal) and the third terminal 320 (gate terminal) also increases according to the applied high voltage.

The sealing resin 8 covers parts of the first lead 1, the second lead 2, and the third lead 3, as well as the switching element 6, the first conductive member 71, and the second conductive member 72. The sealing resin 8 is made of, for example, a black epoxy resin. There are no limitations on the material of the sealing resin 8. The sealing resin 8 is formed, for example, by transfer molding using a mold.

The sealing resin 8 has a resin main surface 81, a resin back surface 82, a resin end surface 83, a first resin side surface 84, a second resin side surface 85, and a third resin side surface 86. The resin main surface 81 and the resin back surface 82 face opposite each other in the thickness direction z. The resin main surface 81 faces the z1 side in the thickness direction z, and the resin back surface 82 faces the z2 side in the thickness direction z. As shown in Figures 3 and 5 to 7, the first back surface 112 of the first lead 1 is exposed from the resin back surface 82 over its entirety, and the resin back surface 82 and the first back surface 112 are flush with each other.

The resin end surface 83 and the first resin side surface 84 are surfaces connected to the resin main surface 81 and the resin back surface 82, respectively. The resin end surface 83 and the first resin side surface 84 face opposite each other in the first direction x. The resin end surface 83 is a surface located on the x1 side of the first direction x and facing the x1 side of the first direction x. The first resin side surface 84 is a surface located on the x2 side of the first direction x and facing the x2 side of the first direction x. The second resin side surface 85 and the third resin side surface 86 are surfaces connected to the resin main surface 81, the resin back surface 82, the resin end surface 83, and the first resin side surface 84, respectively. The second resin side surface 85 and the third resin side surface 86 face opposite each other in the second direction y. The second resin side surface 85 is a surface located on the y1 side of the second direction y and facing the y1 side of the second direction y. The third resin side surface 86 is a surface that is disposed on the y2 side in the second direction y and faces the y2 side in the second direction y.

The resin end surface 83, the first resin side surface 84, the second resin side surface 85, and the third resin side surface 86 each have a surface that is connected to the resin main surface 81 and inclined so as to approach each other toward the resin main surface 81. The sealing resin 8 has a tapered shape in which the cross-sectional area in the xy plane of the sealing resin 8 is smaller toward the resin main surface 81. The resin end surface 83, the first resin side surface 84, the second resin side surface 85, and the third resin side surface 86 each have a surface that is connected to the resin back surface 82 and inclined so as to approach each other toward the resin back surface 82. The sealing resin 8 has a tapered shape in which the cross-sectional area in the xy plane of the sealing resin 8 is smaller toward the resin back surface 82. The shapes of the resin end surface 83, the first resin side surface 84, the second resin side surface 85, and the third resin side surface 86 are not limited.

The resin end surface 83 is a surface facing the direction in which the first terminal 120, the second terminal 220, and the third terminal 320 protrude. The first terminal 120, the second terminal 220, and the third terminal 320 protrude from the resin end surface 83. As shown in FIG. 4, the first terminal 120, the third terminal 320, and the second terminal 220 are spaced apart from each other in the second direction y, and are arranged in this order from the y1 side of the second direction y to the y2 side of the second direction y. The second terminal 220 is located on the opposite side of the third terminal 320 from the first terminal 120 in the second direction y. With this terminal arrangement, the ratio of the distance (first distance D1) between the first terminal 120 and the second terminal 220 in the second direction y to the dimension (second dimension L2) between the second resin side surface 85 and the third resin side surface 86 of the sealing resin 8 in the second direction y is large. For example, the ratio of the distance (first distance D1) between the first terminal 120 and the second terminal 220 in the second direction y to the dimension (second dimension L2) between the second resin side surface 85 and the third resin side surface 86 of the sealing resin 8 in the second direction y is 20% to 85%. The first terminal 120, the second terminal 220, and the third terminal 320 are disposed at the same position in the thickness direction z on the resin end surface 83.

In this embodiment, the sealing resin 8 has a resin through hole 89. The resin through hole 89 is a through hole that extends parallel to the thickness direction z from the resin main surface 81 to the resin back surface 82. The resin through hole 89 is disposed at the center of the sealing resin 8 in the second direction y and toward the x2 side in the first direction x (toward the upper side in FIG. 2), and is circular when viewed in the thickness direction z. In this embodiment, the center of the resin through hole 89 is the same as the center of the base through hole 113. The diameter of the resin through hole 89 is smaller than the diameter of the base through hole 113. As shown in FIGS. 2, 3, and 7, the resin through hole 89 is located inside the base through hole 113, and the hole wall of the resin through hole 89 is entirely formed by the sealing resin 8. The base 110 is not exposed from the hole wall of the resin through hole 89. The resin through hole 89 is used, for example, to attach a heat dissipation member to the semiconductor device A10 by inserting a fastening member such as a screw through the resin through hole 89. The first back surface 112 is connected to the heat dissipation member via an electrical insulating sheet or the like, so that heat generated by the switching element 6 is dissipated via the base 110 and the heat dissipation member.

Next, the effects of the semiconductor device A10 will be explained.

In the semiconductor device A10, the first lead 1 has a first terminal 120, the second lead 2 has a second terminal 220, and the third lead 3 has a third terminal 320. The first terminal 120, the second terminal 220, and the third terminal 320 each protrude from the resin end surface 83 (sealing resin 8) toward the x1 side of the first direction x. The first terminal 120, the second terminal 220, and the third terminal 320 are arranged spaced apart from each other in the second direction y. The second terminal 220 is located on the opposite side of the first terminal 120 with respect to the third terminal 320 in the second direction y. This terminal arrangement allows the distance (first distance D1) between the first terminal 120 and the second terminal 220 in the second direction y to be increased. Specifically, the distance (first distance D1) between the first terminal 120 and the second terminal 220 in the second direction y is 3 to 11 times the dimension (first dimension L1) in the width direction of the first terminal 120. The ratio of the distance (first distance D1) between the first terminal 120 and the second terminal 220 in the second direction y to the dimension (second dimension L2) between the second resin side surface 85 and the third resin side surface 86 of the sealing resin 8 in the second direction y is 20% to 85%. According to the above configuration, as shown in FIG. 4, the creepage distance Dc, which is the shortest distance connecting the location where the first terminal 120 protrudes from the sealing resin 8 and the location where the second terminal 220 protrudes from the sealing resin 8 along the surface of the sealing resin 8, can be secured sufficiently large compared to the case where the first terminal 120 and the second terminal 220 are arranged at positions adjacent to each other in the second direction y. As a result, the semiconductor device A10 can suppress discharge at the resin end surface 83 even when a high voltage is applied between the first terminal 120 and the second terminal 220. Therefore, the semiconductor device A10 of this embodiment can achieve high voltage resistance.

In this embodiment, the pad back surface 212 is exposed from the resin back surface 82. The semiconductor device A10 can dissipate heat emitted by the switching element 6 by connecting a heat dissipation member to the pad back surface 212. The sealing resin 8 has a resin through hole 89 extending parallel to the thickness direction z. The semiconductor device A10 can easily attach a heat dissipation member by inserting a fastening member such as a screw through the resin through hole 89. The center of the resin through hole 89 is the same as the center of the base through hole 113, and the diameter of the resin through hole 89 is smaller than the diameter of the base through hole 113. The resin through hole 89 is located inside the base through hole 113, and the hole wall of the resin through hole 89 is entirely formed by the sealing resin 8. The base 110 is not exposed from the hole wall of the resin through hole 89. This insulates the base 110 from the fastening member. In this embodiment, the thickness dimension of the base 110 is greater than the thickness dimensions of the first terminal 120, the second lead 2, and the third lead 3. The semiconductor device A10 can efficiently absorb the heat emitted by the switching element 6 into the base 110.

In this embodiment, the case where the base 110 has a base through hole 113 and the sealing resin 8 has a resin through hole 89 has been described, but the present disclosure is not limited to this. The base 110 does not have to have a base through hole 113, and the sealing resin 8 does not have to have a resin through hole 89. This also applies to the other embodiments and modified examples described below.

FIGS. 8 to 19 show modified examples of the semiconductor device A10 according to the first embodiment. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated descriptions will be omitted.

First modified example:
Figures 8 to 11 show a semiconductor device A11 according to a first modified example of the first embodiment. Figure 8 is a perspective view of the semiconductor device A11. Figure 9 is a bottom view of the semiconductor device A11, which corresponds to Figure 3. Figure 10 is a cross-sectional view of the semiconductor device A11, which corresponds to Figure 5. Figure 11 is a front view of the semiconductor device A11.

The semiconductor device A11 differs from the semiconductor device A10 of the above embodiment in the configuration of the first lead 1. In the semiconductor device A11, the first terminal 120 extends entirely straight along the first direction x. The position at which the first terminal 120 protrudes from the resin end surface 83 is on the z2 side in the thickness direction z compared to the semiconductor device A10. The position of the first terminal 120 in the thickness direction z is different from the positions of the second terminal 220 and the third terminal 320 in the thickness direction z. The first terminal 120 and the second terminal 220 and the third terminal 320 are spaced apart from each other in the thickness direction z. In the semiconductor device A11, the first back surface 112 of the base 110 is not exposed from the resin back surface 82 and is covered by the sealing resin 8.

As shown in Figures 8 and 11, in the semiconductor device A11 of this modified example, the position at which the first terminal 120 protrudes from the resin end surface 83 is on the z2 side in the thickness direction z from the position at which the second terminal 220 protrudes from the resin end surface 83. In the semiconductor device A11, the creepage distance Dc between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 can be extended more than in the semiconductor device A10. This makes it possible to increase the voltage resistance of the semiconductor device A11.

Second Modification:
12 to 14 show a semiconductor device A12 according to a second modification of the first embodiment. Fig. 12 is a perspective view of the semiconductor device A12. Fig. 13 is a plan view of the semiconductor device A12. Fig. 14 is a front view of the semiconductor device A12.

The semiconductor device A12 differs from the semiconductor device A10 of the above embodiment in the configuration of the sealing resin 8. In the semiconductor device A12, the sealing resin 8 has a first convex portion 87 and a second convex portion 88. The first convex portion 87 and the second convex portion 88 each protrude from the resin end surface 83 toward the x1 side in the first direction x. The first convex portion 87 is provided at a position corresponding to the first terminal 120, and the first terminal 120 protrudes from the first convex portion 87. The second convex portion 88 is provided at a position corresponding to the second terminal 220, and the second terminal 220 protrudes from the second convex portion 88.

As shown in Figures 13 and 14, in the semiconductor device A12 of this modified example, the creepage distance Dc between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 can be extended more than in the semiconductor device A10. This makes it possible to increase the withstand voltage of the semiconductor device A12.

Third variant:
15 to 17 show a semiconductor device A13 according to a third modified example of the first embodiment. Fig. 15 is a perspective view of the semiconductor device A13. Fig. 16 is a plan view of the semiconductor device A13, and corresponds to Fig. 2. In Fig. 16, for ease of understanding, the outline of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. Fig. 17 is a front view of the semiconductor device A13.

The semiconductor device A13 differs from the semiconductor device A11 of the above modification mainly in the configuration of the first terminal 120 in the first lead 1. In the semiconductor device A13, the first terminal 120 has a first twisted portion 125. The first twisted portion 125 is a portion of the first terminal 120 that is twisted 90° around the first direction x, which is the longitudinal direction of the first terminal 120, at a portion of the first terminal 120 covered with the sealing resin 8. In this modification, the first terminal 120 has the first twisted portion 125, so that the first surface 121 and the second surface 122 face both sides of the second direction y at the portion of the first terminal 120 exposed from the sealing resin 8. In FIG. 17, the first terminal 120 without the first twisted portion 125 is shown by an imaginary line (two-dot chain line).

As shown in FIG. 17, in the semiconductor device A13 of this modified example, the creepage distance Dc between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 can be extended more than in the semiconductor device A10 and the semiconductor device A11. This makes it possible to increase the withstand voltage of the semiconductor device A13.

Fourth Modification:
Figures 18 and 19 show a semiconductor device A14 according to a fourth modification of the first embodiment. Figure 18 is a plan view of the semiconductor device A14, and corresponds to Figure 2. In Figure 18, for ease of understanding, the outline of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. Figure 19 is a front view of the semiconductor device A14.

The semiconductor device A14 differs from the semiconductor device A13 of the above modified example in the configuration of the second terminal 220 in the second lead 2. In the semiconductor device A14, in addition to the first terminal 120 having the first twisted portion 125, the second terminal 220 has a second twisted portion 223. The second twisted portion 223 is a portion of the second terminal 220 that is twisted 90 degrees around the first direction x, which is the longitudinal direction of the second terminal 220, in a portion of the second terminal 220 that is covered with the sealing resin 8. In this modified example, since the second terminal 220 has the second twisted portion 223, the third surface 221 and the fourth surface 222 face on both sides of the second direction y in the portion of the second terminal 220 that is exposed from the sealing resin 8. In FIG. 19, the first terminal 120 when the first terminal 120 does not have the first twisted portion 125 and the second terminal 220 when the second terminal 220 does not have the second twisted portion 223 are shown by imaginary lines (double-dashed lines).

As shown in FIG. 19, in the semiconductor device A14 of this modified example, the creepage distance Dc between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 can be extended more than in the semiconductor device A13. This makes it possible to increase the withstand voltage of the semiconductor device A14.

FIGS. 20 to 26 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated descriptions are omitted.

Second embodiment:
20 to 23 show a semiconductor device A20 according to a second embodiment of the present disclosure. FIG. 20 is a plan view of the semiconductor device A20. FIG. 21 is a plan view of the semiconductor device A20, seen through the sealing resin 8. In FIG. 21, for ease of understanding, the outline of the see-through sealing resin 8 is shown by an imaginary line (two-dot chain line). FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 21. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 21.

The semiconductor device A20 of this embodiment has a surface mount type package structure. The first lead 1 has a base 110, a first terminal 120, and an extension 130. The extension 130 is connected to the base 110. The extension 130 is located on the opposite side of the base 110 from the first terminal 120 in the first direction x. The extension 130 extends from the base 110 to the x2 side in the first direction x, and protrudes from the first resin side surface 84 of the sealing resin 8 to the x2 side in the first direction x.

In this embodiment, the first terminal 120, the second terminal 220, and the third terminal 320 each have a bent portion exposed from the sealing resin 8. In each of the first terminal 120, the second terminal 220, and the third terminal 320, the tip portion on the x1 side in the first direction x is located on the z2 side in the thickness direction z of the portion protruding from the sealing resin 8 (resin end surface 83).

In this embodiment, the first terminal 120, the second terminal 220, and the third terminal 320 each protrude from the resin end surface 83 (sealing resin 8) toward the x1 side in the first direction x. The second terminal 220 is located on the opposite side of the first terminal 120 with respect to the third terminal 320 in the second direction y. This terminal arrangement allows the distance (first distance D1) between the first terminal 120 and the second terminal 220 in the second direction y to be increased. With the above configuration, the creepage distance between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 can be secured sufficiently large compared to the case where the first terminal 120 and the second terminal 220 are located adjacent to each other in the second direction y. This allows the semiconductor device A20 to achieve a high withstand voltage. The semiconductor device A20 has a common configuration with the semiconductor device A10, and thus achieves the same effects as the semiconductor device A10.

Third embodiment:
24 to 26 show a semiconductor device A30 according to a third embodiment of the present disclosure. Fig. 24 is a perspective view of the semiconductor device A30. Fig. 25 is a plan view of the semiconductor device A30, and corresponds to Fig. 2. In Fig. 25, for ease of understanding, the outline of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. Fig. 26 is a front view of the semiconductor device A30.

The semiconductor device A30 of this embodiment further includes a fourth lead 4 and a third conductive member 73. The fourth lead 4 is electrically connected to the switching element 6. As shown in FIG. 25, the fourth lead 4 is disposed apart from the first lead 1, the second lead 2, and the third lead 3. The fourth lead 4 is disposed on the x1 side of the base 110 of the first lead 1 in the first direction x, between the second lead 2 and the third lead 3 in the second direction y. As shown in FIG. 26, in this embodiment, the position of the fourth lead 4 in the thickness direction z is the same as that of the second lead 2 and the third lead 3. The fourth lead 4 includes a fourth pad 410 and a fourth terminal 420.

The fourth pad 410 is the portion to which the third conductive member 73 is bonded, and has a rectangular shape (or a roughly rectangular shape) that is longer in the second direction y when viewed in the thickness direction z. The fourth pad 410 has a pad main surface 411. The pad main surface 411 faces the z1 side in the thickness direction z, and the third conductive member 73 is bonded to it. In the example shown, the third conductive member 73 is a wire (bonding wire). There are no limitations on the material, thickness, or number of the third conductive member 73. The fourth pad 410 is entirely covered with sealing resin 8.

The fourth terminal 420 is connected to the fourth pad 410 and is electrically connected to the second electrode 64 (source electrode) of the switching element 6 via the fourth pad 410 and the third conductive member 73. The fourth terminal 420 functions as a source sense terminal of the semiconductor device A30. The width dimension (dimension in the second direction y) of the fourth terminal 420 is smaller than the width dimension (dimension in the second direction y) of the fourth pad 410. The thickness dimension (dimension in the thickness direction z) of the fourth terminal 420 is the same as the thickness dimension (dimension in the thickness direction z) of the fourth pad 410 and is the same as the thickness dimension of the first terminal 120. As shown in FIG. 25, the fourth terminal 420 is disposed on the x1 side of the first direction x and in the center in the second direction y with respect to the fourth pad 410. The fourth terminal 420 extends in the first direction x and includes a portion protruding from the sealing resin 8. The shape of the fourth lead 4 is not limited to the above.

As shown in FIG. 26, the first terminal 120, the third terminal 320, the fourth terminal 420, and the second terminal 220 are spaced apart from one another in the second direction y on the resin end surface 83, and are arranged in this order from the y1 side of the second direction y to the y2 side of the second direction y. The first terminal 120 and the second terminal 220 are located on the outermost sides opposite one another in the second direction y among the first terminal 120, the second terminal 220, the third terminal 320, and the fourth terminal 420. The first terminal 120, the second terminal 220, the third terminal 320, and the fourth terminal 420 are arranged at the same position in the thickness direction z on the resin end surface 83.

In this embodiment, the second terminal 220 is located on the opposite side of the third terminal 320 from the first terminal 120 in the second direction y. In this embodiment, the first terminal 120 and the second terminal 220 are located on the outermost sides of the first terminal 120 to the fourth terminal 420 on the opposite sides in the second direction y. This terminal arrangement makes it possible to increase the distance (first distance D1) between the first terminal 120 and the second terminal 220 in the second direction y. With the above configuration, as shown in FIG. 26, it is possible to ensure that the creepage distance Dc between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 is sufficiently large compared to the case where the first terminal 120 and the second terminal 220 are located adjacent to each other in the second direction y. This allows the semiconductor device A30 to have a high withstand voltage. The semiconductor device A30 has a common configuration with the semiconductor device A10 and thus achieves the same effects as the semiconductor device A10.

FIGS. 27 and 28 show a modified example of the semiconductor device A30 according to the third embodiment. In these figures, elements that are the same as or similar to those in the third embodiment above are given the same reference numerals as in the above embodiment, and duplicated descriptions are omitted.

First modified example:
Figures 27 and 28 show a semiconductor device A31 according to a first modified example of the third embodiment. Figure 27 is a plan view of the semiconductor device A31, and corresponds to Figure 2. In Figure 27, for ease of understanding, the outline of the sealing resin 8 is shown by an imaginary line (two-dot chain line) through the sealing resin 8. Figure 28 is a front view of the semiconductor device A31.

The semiconductor device A31 differs from the semiconductor device A30 of the above embodiment mainly in the arrangement of the second lead 2 and the fourth lead 4. In the semiconductor device A31, the arrangement of the second lead 2 and the fourth lead 4 is swapped compared to the semiconductor device A30. The fourth lead 4 is arranged on the y2 side of the second direction y relative to the second lead 2 in the second direction y. In the semiconductor device A31, as shown in FIG. 27, the first terminal 120, the third terminal 320, the second terminal 220, and the fourth terminal 420 are spaced apart from each other in the second direction y on the resin end surface 83, and are arranged in this order from the y1 side of the second direction y to the y2 side of the second direction y.

In the semiconductor device A31, the second terminal 220 is located on the opposite side of the third terminal 320 from the first terminal 120 in the second direction y. This arrangement of terminals allows the distance (first distance D1) between the first terminal 120 and the second terminal 220 in the second direction y to be increased. With the above configuration, as shown in FIG. 28, it is possible to ensure a sufficiently large creepage distance Dc between the first terminal 120 and the second terminal 220 on the surface of the sealing resin 8 compared to the case where the first terminal 120 and the second terminal 220 are located adjacent to each other in the second direction y. This allows the semiconductor device A31 to have a high withstand voltage. The semiconductor device A31 has a configuration in common with the semiconductor device A10, and thus provides the same effects as the semiconductor device A10.

The semiconductor device according to the present disclosure is not limited to the above-mentioned embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways.

The present disclosure includes the embodiments described in the appended claims below.
Appendix 1.
a switching element having a first electrode, a second electrode, and a third electrode, the first electrode and the second electrode being on/off controlled by applying a drive voltage between the third electrode and the second electrode while a potential difference is applied between the first electrode and the second electrode;
a first lead having a base on which the switching element is mounted and a first terminal electrically connected to the first electrode;
a second lead having a second terminal in electrical communication with the second electrode;
a third lead having a third terminal in electrical communication with the third electrode;
a sealing resin that covers the switching element, and a portion of each of the first terminal, the second terminal, and the third terminal;
the first terminal, the second terminal, and the third terminal each include a portion protruding from the sealing resin to one side in a first direction perpendicular to a thickness direction of the base,
the first terminal, the second terminal, and the third terminal are disposed apart from one another in the thickness direction and in a second direction perpendicular to the first direction,
The second terminal is located on an opposite side of the third terminal from the first terminal in the second direction.
Appendix 2.
the first terminal has a first surface and a second surface facing in opposite directions and is plate-shaped extending in the first direction;
2. The semiconductor device according to claim 1, wherein the second terminal has a third surface and a fourth surface facing opposite each other and is plate-shaped extending in the first direction.
Appendix 3.
3. The semiconductor device according to claim 2, wherein the first surface and the second surface of the first terminal are oriented in the second direction in a portion of the first terminal exposed from the sealing resin.
Appendix 4.
4. The semiconductor device according to claim 3, wherein the third surface and the fourth surface face in the portion of the second terminal exposed from the sealing resin.
Appendix 5.
The semiconductor device described in Appendix 2, wherein when a distance between the first terminal and the second terminal in the second direction is a first distance, and a dimension of the first terminal in a plate thickness direction perpendicular to the first surface and a width direction perpendicular to the first direction is a first dimension, the first distance is 3 to 11 times the first dimension.
Appendix 6.
6. The semiconductor device according to claim 1, wherein the first terminal and the second terminal are spaced apart from each other in the thickness direction.
Appendix 7.
7. The semiconductor device according to claim 1, wherein the sealing resin has a resin main surface and a resin back surface facing opposite each other in the thickness direction, a resin end surface connected to the resin main surface and the resin back surface and facing one side in the first direction, a first resin side surface facing the other side in the first direction, and a second resin side surface and a third resin side surface facing opposite each other in the second direction.
Appendix 8.
The semiconductor device described in Appendix 7, wherein when a dimension in a second direction between the second resin side surface and the third resin side surface is a second dimension, and a distance in the second direction between the first terminal and the second terminal is a first distance, a ratio of the first distance to the second dimension is 20% to 85%.
Appendix 9.
the sealing resin has a first protrusion protruding from the resin end surface to one side in the first direction,
9. The semiconductor device according to claim 7, wherein the first terminal protrudes from the first protrusion.
Appendix 10.
the sealing resin has a second protrusion protruding from the resin end surface to one side in the first direction,
10. The semiconductor device according to claim 7, wherein the second terminal protrudes from the second protrusion.
Appendix 11.
a first conductive member conductively connected to the second electrode and the second lead;
a second conductive member conductively connected to the third electrode and the third lead,
11. The semiconductor device according to claim 1, wherein the first conductive member and the second conductive member are covered with the sealing resin.
Appendix 12.
the second lead includes a first pad connected to the second terminal on the other side in the first direction and to which the first conductive member is conductively joined;
12. The semiconductor device according to claim 11, wherein the third lead is connected to the other side of the third terminal in the first direction and has a second pad to which the second conductive member is conductively joined.
Appendix 13.
the switching element has a main surface facing one side in the thickness direction and a back surface facing the other side in the thickness direction,
the first electrode is a drain electrode and is disposed on a rear surface of the element;
the second electrode is a source electrode and is disposed on the main surface of the element;
the third electrode is a gate electrode and is disposed on the main surface of the element;
the first electrode is conductively bonded to the base;
13. The semiconductor device according to claim 1, wherein the first terminal is connected to the base.
Appendix 14.
a fourth lead having a fourth terminal in electrical communication with the second electrode;
14. The semiconductor device according to claim 1, wherein the fourth terminal includes a portion protruding from the sealing resin to one side in the first direction, and is disposed at a distance in the second direction from the first terminal, the second terminal, and the third terminal.
Appendix 15.
15. The semiconductor device according to claim 14, wherein the first terminal and the second terminal are located at outermost positions opposite to each other in the second direction among the first terminal to the fourth terminal.

A10 to A14, A20, A30, A31: semiconductor device 1: first lead 110: base 111: first main surface 112: first back surface 113: base through hole 114: base end surface 120: first terminal 121: first surface 122: second surface 123: first perpendicular portion 124: first connecting portion 125: first twisted portion 130: extension portion 2: second lead 210: second pad 220: second terminal 221: third surface 222: fourth surface 223: second twisted portion 3: third lead 310: third pad 311: pad main surface 312: pad back surface 321: fifth surface 322: sixth surface 4: fourth lead 410: fourth pad 411: pad main surface 412: pad back surface 420: Fourth terminal 6: Switching element 60: Element body 61: Element main surface 62: Element rear surface 63: First electrode (drain electrode) 64: Second electrode (source electrode)
65: third electrode (gate electrode) 69: bonding material 69
71: First conductive member 72: Second conductive member 73: Third conductive member 8: Sealing resin 81: Resin main surface 82: Resin back surface 83: Resin end surface 84: First resin side surface 85: Second resin side surface 86: Third resin side surface 87: First convex portion 88: Second convex portion 89: Resin through hole D1: First distance Dc: Creepage distance L1: First dimension L2: Second dimension

Claims

a switching element having a first electrode, a second electrode, and a third electrode, the first electrode and the second electrode being on/off controlled by applying a drive voltage between the third electrode and the second electrode while a potential difference is applied between the first electrode and the second electrode;
a first lead having a base on which the switching element is mounted and a first terminal electrically connected to the first electrode;
a second lead having a second terminal in electrical communication with the second electrode;
a third lead having a third terminal in electrical communication with the third electrode;
a sealing resin that covers the switching element, and a portion of each of the first terminal, the second terminal, and the third terminal;
the first terminal, the second terminal, and the third terminal each include a portion protruding from the sealing resin to one side in a first direction perpendicular to a thickness direction of the base,
the first terminal, the second terminal, and the third terminal are disposed apart from one another in the thickness direction and in a second direction perpendicular to the first direction,
The second terminal is located on an opposite side of the third terminal from the first terminal in the second direction.
the first terminal has a first surface and a second surface facing in opposite directions and is plate-shaped extending in the first direction;
The semiconductor device according to claim 1 , wherein the second terminal has a third surface and a fourth surface facing in opposite directions, and is plate-shaped extending in the first direction.
The semiconductor device according to claim 2, wherein the first surface and the second surface of the first terminal that is exposed from the sealing resin face in the second direction.
The semiconductor device according to claim 3, wherein the third surface and the fourth surface of the portion of the second terminal exposed from the sealing resin face the second direction.
The semiconductor device according to claim 2, wherein the distance between the first terminal and the second terminal in the second direction is a first distance, and the dimension of the first terminal in the plate thickness direction perpendicular to the first surface and in the width direction perpendicular to the first direction is a first dimension, and the first distance is 3 to 11 times the first dimension.
The semiconductor device according to any one of claims 1 to 5, wherein the first terminal and the second terminal are spaced apart from each other in the thickness direction.
The semiconductor device according to any one of claims 1 to 6, wherein the sealing resin has a resin main surface and a resin back surface facing opposite each other in the thickness direction, a resin end surface connected to the resin main surface and the resin back surface and facing one side in the first direction, a first resin side surface facing the other side in the first direction, and a second resin side surface and a third resin side surface facing opposite each other in the second direction.
The semiconductor device according to claim 7, wherein the ratio of the first distance to the second dimension is 20% to 85%, where the dimension in the second direction between the second resin side surface and the third resin side surface is the second dimension, and the distance in the second direction between the first terminal and the second terminal is the first distance.
the sealing resin has a first protrusion protruding from the resin end surface to one side in the first direction,
The semiconductor device according to claim 7 , wherein the first terminal protrudes from the first protrusion.
the sealing resin has a second protrusion protruding from the resin end surface to one side in the first direction,
10. The semiconductor device according to claim 7, wherein the second terminal protrudes from the second protrusion.
a first conductive member conductively connected to the second electrode and the second lead;
a second conductive member conductively connected to the third electrode and the third lead,
The semiconductor device according to claim 1 , wherein the first conductive member and the second conductive member are covered with the sealing resin.
the second lead includes a first pad connected to the second terminal on the other side in the first direction and to which the first conductive member is conductively joined;
12 . The semiconductor device according to claim 11 , wherein the third lead includes a second pad connected to the other side of the third terminal in the first direction and to which the second conductive member is conductively joined.
the switching element has a main surface facing one side in the thickness direction and a back surface facing the other side in the thickness direction,
the first electrode is a drain electrode and is disposed on a rear surface of the element;
the second electrode is a source electrode and is disposed on the main surface of the element;
the third electrode is a gate electrode and is disposed on the main surface of the element;
the first electrode is conductively bonded to the base;
The semiconductor device according to claim 1 , wherein the first terminal is connected to the base portion.
a fourth lead having a fourth terminal in electrical communication with the second electrode;
14. The semiconductor device according to claim 1, wherein the fourth terminal includes a portion protruding from the sealing resin to one side in the first direction, and is disposed at a distance in the second direction from the first terminal, the second terminal, and the third terminal.
The semiconductor device according to claim 14, wherein the first terminal and the second terminal are located at the outermost positions opposite each other in the second direction among the first terminal to the fourth terminal.