WO2024129517A1 - Systèmes et procédés de commande d'un générateur d'impulsions rf lf pour augmenter la sélectivité - Google Patents

Systèmes et procédés de commande d'un générateur d'impulsions rf lf pour augmenter la sélectivité Download PDF

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Publication number
WO2024129517A1
WO2024129517A1 PCT/US2023/083011 US2023083011W WO2024129517A1 WO 2024129517 A1 WO2024129517 A1 WO 2024129517A1 US 2023083011 W US2023083011 W US 2023083011W WO 2024129517 A1 WO2024129517 A1 WO 2024129517A1
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WIPO (PCT)
Prior art keywords
pulse
square
sub
pulses
ringing
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PCT/US2023/083011
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English (en)
Inventor
Alexei M. MARAKHTANOV
Lin Zhao
Fabio RIGHETTI
Kenneth Lucchesi
John P. Holland
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Lam Research Corporation
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Publication of WO2024129517A1 publication Critical patent/WO2024129517A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Definitions

  • the present embodiments relate to systems and methods for controlling a low frequency (LF) radio frequency (RF) pulse generator to increase selectivity.
  • LF low frequency
  • RF radio frequency
  • RF generators In a plasma tool, there are multiple radio frequency (RF) generators.
  • the RF generators are coupled via a match to a plasma chamber.
  • a wafer is placed inside the plasma chamber for processing.
  • the RF generators generate RF signals and supply the RF signals to the match.
  • the match matches an output impedance with an input impedance to output an RF signal towards the plasma chamber.
  • the RF signal is used to generate plasma for processing the wafer.
  • Embodiments of the disclosure provide systems, apparatus, methods and computer programs for controlling a low frequency (LF) radio frequency (RF) generator to increase selectivity. It should be appreciated that the present embodiments can be implemented in numerous ways, e.g., a process, an apparatus, a system, a device, or a method on a computer readable medium. Several embodiments are described below.
  • LF low frequency
  • RF radio frequency
  • sub-pulses are introduced between peaks of pulses to produce ions with lower energy.
  • the low energy ions improve mask selectivity.
  • a method for controlling an LF RF pulse generator to increase selectivity includes controlling the LF RF pulse generator to generate a plurality of square pulses that are interspersed with a plurality of square sub-pulses. Each of the plurality of square pulses has a first sub-pulse width that is greater than a second sub-pulse width of each of the plurality of square sub-pulses.
  • the operation of controlling the LF RF pulse generator includes controlling the LF RF pulse generator to generate one of the plurality of square pulses, determining whether a predetermined amount of time has passed since controlling the LF RF pulse generator to generate the one of the plurality of square pulses, and controlling the LF RF pulse generator to generate one of the plurality of square sub-pulses upon determining that the predetermined amount of time has passed.
  • the operation of controlling the LF RF pulse generator to generate the plurality of square sub-pulses increases the selectivity.
  • a controller for controlling an LF RF pulse generator to increase selectivity includes a processor that controls the LF RF pulse generator to generate a plurality of square pulses that are interspersed with a plurality of square subpulses. Each of the plurality of square pulses has a first sub-pulse width that is greater than a second sub-pulse width of each of the plurality of square sub-pulses.
  • the processor controls the LF RF pulse generator to generate one of the plurality of square pulses.
  • the processor determines whether a predetermined amount of time has passed since the LF RF pulse generator is controlled to generate the one of the plurality of square pulses. Also, to control the LF RF pulse generator, the processor controls the LF RF pulse generator to generate one of the plurality of square sub-pulses upon determining that the predetermined amount of time has passed.
  • the controller includes a memory device coupled to the processor.
  • a plasma system in one embodiment, includes an LF RF pulse generator.
  • the plasma system further includes a plasma chamber coupled to the LF RF pulse generator via an RF cable.
  • the plasma system includes a controller coupled to the LF RF pulse generator.
  • the controller controls the LF RF pulse generator to generate a plurality of square pulses that are interspersed with a plurality of square sub-pulses.
  • Each of the plurality of square pulses has a first sub-pulse width that is greater than a second sub-pulse width of each of the plurality of square sub-pulses.
  • the controller controls the LF RF pulse generator to generate one of the plurality of square pulses.
  • the controller determines whether a predetermined amount of time has passed since the LF RF pulse generator is controlled to generate the one of the plurality of square pulses. Also, to control the LF RF pulse generator, the controller controls the LF RF pulse generator to generate one of the plurality of square sub-pulses upon determining that the predetermined amount of time has passed.
  • Several advantages of the herein described systems and methods for controlling the LF RF pulse generator include providing an increase in the selectivity. By introducing subpulses in between pulses of a square pulse waveform generated by the LF RF generator, there is an increase in the selectivity. A number of low energy ions increases as a result of the sub-pulses. With the increase in the low-energy ions, the selectivity increases. Moreover, a combination of the pulses and the sub-pulses of the square pulse waveform provides a balance between achieving an etch rate and achieving the selectivity.
  • Figure 1 is a diagram of an embodiment of a system for controlling a low frequency (LF) radio frequency (RF) pulse generator to increase selectivity.
  • LF low frequency
  • RF radio frequency
  • Figure 2A is a graph to illustrate an embodiment of a clock signal.
  • Figure 2B is a graph to illustrate an embodiment of a square pulse waveform.
  • Figure 2C is a graph to illustrate a square pulse waveform to provide an example of an increase in a peak value of each sub-pulse of the square pulse waveform with a decrease in a sub-pulse width.
  • Figure 2D is a graph to illustrate a square pulse waveform to provide an example of a decrease in a peak value of each sub-pulse of the square pulse waveform with an increase in the sub-pulse width.
  • Figure 3 is a block diagram of an embodiment of a system to illustrate a method for controlling the LF RF pulse generator.
  • Figure 4 is a diagram of an embodiment of a system to illustrate a control of the LF RF pulse generator by processor of a controller.
  • Figure 5 is a graph to illustrate that selectivity increases with an increase in voltage of the sub-pulses of the square pulse waveform.
  • Figure 6 is a graph to illustrate that a voltage of a bottom plasma sheath changes with introduction of multiple sub-pulses of the square pulse waveform.
  • FIG. 1 is a diagram of an embodiment of a system 100 for controlling an LF RF pulse generator 104 to increase selectivity.
  • the system 100 includes a function generatorl02, the LF RF pulse generator 104, and a plasma chamber 106.
  • Examples of the function generator 102 include a desktop computer, a laptop computer, a tablet, a smart phone, and a controller.
  • the function generator!02 includes a processor 108 and a memory device 110.
  • the processor 108 can be an application specific integrated circuit (ASIC), a central processing unit (CPU), a field programmable gate array (FPGA), a programmable logic device (PLD), an integrated controller, or a microcontroller.
  • Examples of the memory device 110 include a read-only memory (ROM) and a random access memory (RAM).
  • the memory device 144 is a flash memory or a redundant array of independent discs (RAID).
  • the processor 108 is coupled to the memory device 110.
  • An example of the LF RF pulse generator 104 is a machine that generates multiple high-voltage nanosecond pulses periodically.
  • the LF RF pulse generator 104 is a nanosecond pulser.
  • Each high-voltage nanosecond pulse is sometimes referred to herein as a pulse or a sub-pulse.
  • Examples of low frequency include frequencies ranging from and including 10 kilohertz (kHz) to 800 kHz.
  • the low frequency is a baseline frequency of 400 kHz.
  • a frequency of operation of the LF RF pulse generator 104 is 400 kHz.
  • An example of a baseline frequency is a fundamental frequency.
  • the plasma chamber 106 includes a substrate support 112, such as an electrostatic chuck (ESC).
  • the plasma chamber 106 further includes an upper electrode 114 that is located above the substrate support 112 to form a gap 118 between the upper electrode 114 and the substrate support 112.
  • the upper electrode 114 faces the substrate support 112.
  • a substrate S is placed on a top surface of the substrate support 112. Examples of the substrate S include a semiconductor wafer and a substrate stack. To illustrate, the substrate stack includes one or more layers, such as a mask layer, a metal layer, and an oxide layer.
  • a lower electrode 116, embedded within the substrate support 112, is made from a metal, such as aluminum or an alloy of aluminum.
  • the substrate support 112 is made from the metal and from a ceramic, such as aluminum oxide (AI2O3).
  • the upper electrode 114 is fabricated from the metal.
  • An example of the plasma chamber 112 is a capacitively coupled plasma (CCP) chamber.
  • the upper electrode 114 is coupled to a ground potential.
  • the processor 108 is coupled to the LF RF pulse generator 104 via a transfer cable 120 and an output 122 of the LF RF pulse generator 104 is coupled to the lower electrode 116 via an RF cable 122 and an RF transmission line 126.
  • a transfer cable include a cable that allows for serial transfer of data, or a cable that allows for a parallel transfer of data, or a cable that allows for transfer of data using a Universal Serial Bus (USB) protocol.
  • a control signal send from the processor 108 to the LF RF pulse generator 104 includes data or information.
  • the RF cable 122 is a high voltage RF cable to facilitate a transfer of high-voltage nanosecond pulses.
  • the RF cable 122 is a coaxial cable.
  • An example of an RF transmission line includes an RF rod that is surrounded by an RF tunnel, with an insulator between the RF rod and the RF tunnel.
  • the RF rod, the RF tunnel, and the insulator are components of the RF transmission line.
  • Another example of an RF transmission line includes a combination of one or more RF straps, an RF rod, an insulator, and an RF tunnel.
  • the one or more RF straps are coupled to the RF rod.
  • the RF rod is surrounded by the insulator, which is surrounded by the RF tunnel.
  • a match there is no match between the LF RF pulse generator 104 and the plasma chamber 106.
  • a match includes an impedance matching circuit or an impedance matching network.
  • the match is a series of circuit components, such as capacitors, inductors, and resistors. The circuit components are coupled to each other. To illustrate, two of the circuit components are coupled to each other in a series or in parallel.
  • the match matches an impedance of a load, such as the plasma chamber 106, coupled to an output of the match with an impedance of a source coupled to an input of the match.
  • the processor 108 generates a recipe signal 130 and sends the recipe signal 130 via the transfer cable 120 the LF RF pulse generator 104.
  • the recipe signal 130 includes information regarding a square pulse waveform 132.
  • the square pulse waveform 132 is sometimes referred to herein as an interspersed waveform.
  • the square pulse waveform 132 includes multiple pulses 132A and 132B that are interspersed with multiple sub-pulses 134A and 134B.
  • the sub-pulse 134A is located between two adjacent pulses 132A and 132B.
  • the pulses 132 A and 132B are adjacent in that there is no pulse between the two pulses 132A and 132B.
  • the sub-pulse 134A immediately follows the pulse 132A.
  • the pulse 132B immediately follows the sub-pulse 134A and the sub-pulse 134B immediately follows the pulse 132B.
  • the pulses of the square pulse waveform 132 are sometimes referred to herein as square pulses and the sub-pulses of the square pulse waveform 132 are sometimes referred to herein as square sub-pulses.
  • the square pulse waveform 132 is not a sinusoidal signal.
  • an envelope, such as a power level, of the sinusoidal signal is constant or substantially constant.
  • a power level of an envelope, such as a maximum amplitude, of the sinusoidal signal has power amounts within a predetermined range, such as within ⁇ 10% from each other.
  • the square pulse waveform 132 has a different envelope for RF voltage ringings of the square pulse waveform 132 than an envelope of any pulse of the square pulse waveform 132 or an envelope of any sub-pulse of the square pulse waveform 132.
  • an envelope of an RF voltage ringing is less than 10% of an envelope of a pulse that precedes the RF voltage ringing.
  • the envelope of the pulse is greater than 100% of the envelope of the RF voltage ringing that immediately follows the pulse.
  • an envelope of an RF voltage ringing is less than 10% of an envelope of a sub-pulse that precedes the RF voltage ringing.
  • the envelope of the sub-pulse is greater than 100% of the envelope of the RF voltage ringing that immediately follows the sub-pulse.
  • the sinusoidal signal does not have pulses with each pulse having a rectangular-shaped envelope and does not have sub-pulses with each sub-pulse having a rectangular- shaped envelope. Also, in the illustration, the sinusoidal signal does not have RF voltage ringing.
  • the information regarding the square pulse waveform 132 includes a first sub-pulse width (SPW) of each of the pulses, such as the pulses 132A and 132B, of the square pulse waveform 132, and includes a second sub-pulse width of each of the sub-pulses, such as the sub-pulses 134A and 134B, of the square pulse waveform 132.
  • the second sub-pulse width is less than the first sub-pulse width.
  • the second sub-pulse width is less than the first sub-pulse width by at least 10%.
  • the second sub-pulse width is less than the first sub-pulse width by a percentage between 10% and 90%.
  • the second sub-pulse width is between 10% and 90% of the first sub-pulse width.
  • the information includes a phase delay, such as a time period or a time interval, after which the first sub-pulse width is to be modified to the second sub-pulse width.
  • the phase delay includes a time period for which RF voltage ringing that immediately follows the first sub-pulse width occurs.
  • the information regarding the square pulse waveform 132 includes a frequency of occurrences of the pulses, such as the pulses 132A and 132B, of the square pulse waveform 132.
  • the LF RF pulse generator 104 includes a controller, which includes a processor and a memory device.
  • the processor of the LF RF pulse generator 104 is coupled to the memory device of the LF RF pulse generator 104.
  • the processor of the LF RF pulse generator 104 receives the information regarding the square pulse waveform 132 from the processor 108 and stores the information in the memory device of the LF RF pulse generator 104.
  • the processor 130 generates a trigger signal 134 and sends the trigger signal 134 via the transfer cable 120 to the LF RF pulse generator 104.
  • the processor of the LF RF pulse generator 104 accesses the information regarding the square pulse waveform 132 from the memory device of the LF RF pulse generator 104, and controls signal components of the LF RF pulse generator 104 to generate the square pulse waveform 132 based on the information.
  • the square pulse waveform 132 is transferred via the RF cable 124 and the RF transmission line 126 to the lower electrode 116 to provide power to the lower electrode 116.
  • plasma is stricken or maintained within the gap 118 to process the substrate S.
  • the plasma is bordered by a top plasma sheath 115A and a bottom plasma sheath 115B.
  • the plasma processes a substrate S, such as a semiconductor wafer, that is placed on the substrate support 112. Examples of processing the substrate S include etching the substrate S, or depositing one or more material layers on the substrate S, or cleaning the substrate S, or sputtering the substrate S.
  • the one or more process gases include an oxygen containing gas, a fluorine containing gas, and a combination thereof.
  • RF voltage ringing and RF ringing are used herein interchangeably.
  • RF ringing is sometimes referred to herein as RF voltage ringing.
  • FIG. 2A is a graph 200 to illustrate an embodiment of a clock signal 202.
  • the clock signal 202 is generated by the processor 108 ( Figure 1) and sent via the transfer cable 120 to the processor of the LF RF pulse generator 104 ( Figure 1).
  • the processor of the LF RF pulse generator 104 controls the signal components of the LF RF pulse generator 104 in synchronization with the clock signal 202.
  • the graph 200 plots logic levels of the clock signal 202 versus time t.
  • the logic levels are plotted on a y-axis of the graph 200 and the time t is plotted on an x-axis of the graph 200.
  • the time t increases in a positive x-direction of the x-axis from a time tO to a time t40.
  • the time t progresses from the time tO to the time t40. It should be noted that a time interval between two consecutive times on the x-axis of the graph 200 is equal to a time interval between any other two consecutive times on the x-axis.
  • a first time interval between the times tO and t5 is equal to a second time interval between the times t5 and tlO.
  • a time interval between the times tO and tl is equal to a time interval between the times tl and t2 and a time interval between the times t2 and t3.
  • the clock signal 202 periodically transitions between a logic level 1 and a logic level 0. For example, during a cycle n of the clock signal 202, the clock signal 202 is at the logic level 1 from a time tO to a time t5, where n is an integer greater than zero. Also, during the cycle n, at the time t5, the clock signal 202 transitions from the logic level 1 to the logic level 0. Further, during the cycle n, the clock signal 202 remains at the logic level 0 from the time t5 to the time tlO. The logic levels 1 and 0 repeat in this manner during a cycle (n+1) of the clock signal 202, a cycle (n+2) of the clock signal 202, and a cycle (n+3) of the clock signal 202.
  • each cycle of the clock signal 202 is also a cycle of the square pulse waveform 132 ( Figure 1).
  • the clock signal 202 and the square pulse waveform 132 are synchronized with each other.
  • the cycle n of the clock signal 202 is also the cycle n of the square pulse waveform 132
  • the cycle (n+1) of the clock signal 202 is also the cycle (n+1) of the square pulse waveform 132
  • the cycle (n+2) of the clock signal 202 is also the cycle (n+2) of the square pulse waveform 132
  • the cycle (n+3) of the clock signal 202 is also the cycle (n+3) of the square pulse waveform 132.
  • a pulse and a consecutively following RF voltage ringing of the square pulse waveform 132 repeat periodically to generate the cycles n, (n+2), and so on of the square pulse waveform 132, and sub-pulse and a consecutively following RF voltage ringing of the square pulse waveform 132 repeat periodically to generate the cycles (n+1), (n+3), and so on of the square pulse waveform 132.
  • Figure 2B is a graph 200 to illustrate an embodiment of a square pulse waveform 202, which is an example of the square pulse waveform 132 ( Figure 1).
  • the graph 200 plots voltage of the square pulse waveform 202 versus the time t.
  • the voltage of the square pulse waveform 202 is plotted on a y-axis of the graph 200 and the time t is plotted on an x-axis of the graph 200.
  • the x- axis of the graph 200 is the same as the x-axis of the graph 201 ( Figure 2A).
  • the voltage ranges from a voltage value -V6 to a voltage value V6. For example, the voltage increases from -V6 to V6.
  • the square pulse waveform 202 has a series of pulses, such as a pulse 204A and a pulse 204B, that is interspersed with a series of sub-pulses, such as a sub-pulse 206A and a subpulse 206B.
  • the pulse 204A occurs from the time tO to the time t4.
  • RF voltage ringing 208A consecutively follows the pulse 204A.
  • the RF voltage ringing 208A occurs from the time t4 to the time tlO.
  • An illustration of RF voltage ringing is noise.
  • the sub-pulse 206A occurs from the time tlO to the time tl2, and RF voltage ringing 210A immediately follows the sub-pulse 206A.
  • the RF voltage ringing 210A occurs from the time t!2 to the time t20.
  • the pulse 204B occurs immediately after the RF voltage ringing 210A.
  • the pulse 204B occurs from the time t20 to the time t24.
  • RF voltage ringing 208B immediately follows the pulse 204B, and occurs from the time t24 to the time t30.
  • the sub-pulse 206B occurs immediately after the RF voltage ringing 208B and occurs from the time t30 to the time t32.
  • the sub-pulse 206B is immediately followed by RF voltage ringing 210B from the time t32 to the time t40.
  • the pulse 204A is an example of the pulse 132A and the pulse 204B is an example of the pulse 132B ( Figure 1).
  • Each pulse such as the pulse 204A and 204B, has a first subpulse width 212.
  • An example of the first sub-pulse width 212 is a time interval or a time period. To illustrate, the first sub-pulse width 212 of the pulse 204A ranges from the time tO to the time t4 and the first sub-pulse width 212 of the pulse 204B ranges from the time t20 to the time t24.
  • the pulse 204A has the voltage value -V4 and at the time t4, the pulse 204A has the voltage value -V4.
  • the pulse 204A transitions upward from the voltage value -V4 to the voltage value V6 during a time interval from the time tO to the time t2.
  • the pulse 204A has the voltage value V6, which is a peak value, such as a maximum amplitude, of the pulse 204A.
  • the pulse 204A further transitions down from the voltage value V6 to the voltage value -V4 during a time interval from the time t2 to the time t4.
  • the pulse 204A is enclosed by an envelope 214, which is rectangular- shaped.
  • the pulse 204B transitions from the voltage value -V6 to the voltage value V4, which is a peak value, and transitions back down to the voltage value -V4. Also, the pulse 204B is enclosed by another instance of the envelope 214.
  • the sub-pulse 206 A is an example of the sub-pulse 134A and the sub-pulse 206B is an example of the sub-pulse 134B ( Figure 1).
  • Each sub-pulse, such as the sub-pulse 206A and 206B, has a second sub-pulse width 216.
  • An example of the second sub-pulse width 216 is a time interval or a time period.
  • the second sub-pulse width 216 of the sub-pulse 206 A ranges from the time tlO to the time tl2 and the second sub-pulse width 216 of the sub-pulse 206 A ranges from the time t30 to the time t32.
  • the sub-pulse 206A has the voltage value - V4 and at the time tl2, the sub-pulse 206A has the voltage value -V4.
  • the sub-pulse 206A transitions upward from the voltage value -V4 to the voltage value V0 during a time interval from the time tlO to the time tl0.5.
  • the sub-pulse 206A has the voltage value V0, which is a peak value, such as a maximum amplitude, of the sub-pulse 206A.
  • the sub-pulse 206A further transitions down from the voltage value V0 to the voltage value -V4 during a time interval from the time tl0.5 to the time til.5.
  • the sub-pulse 206A is enclosed by an envelope 218, which is rectangular- shaped.
  • the sub-pulse 206B transitions from the voltage value -V4 to the voltage value V0, which is a peak value, and transitions back down to the voltage value -V4.
  • the sub-pulse 206B is enclosed by another instance of the envelope 218.
  • the envelope 214 becomes squareshaped or achieves a smaller rectangular shape.
  • the first sub-pulse width 212 ranges from 10 nanoseconds (ns) to 500 ns and a rise time of each pulse of the square pulse waveform 202 is about 50 ns.
  • each pulse of the square pulse waveform 202 has a rise time that ranges from 40 ns to 60 ns.
  • each of the pulses 204A and 204B become square pulses, such as square-shaped pulses.
  • the pulses 204A and 204B are sometimes referred to herein as square pulses.
  • the envelope 218 becomes square-shaped or of a smaller rectangular shape.
  • the second sub-pulse width 216 ranges from 5 ns to 250 ns and a rise time of each pulse of the square pulse waveform 202 is about 25 ns.
  • each sub-pulse of the square pulse waveform 202 has a rise time that ranges from 20 ns to 30 ns.
  • each of the sub-pulses 206A and 206B become square pulses, such as square-shaped pulses.
  • each RF voltage ringing such as the RF voltage ringing 208A and the RF voltage ringing 208B, associated with a respective preceding pulse of the square pulse waveform 202 has a ringing width 220, which is greater than the first sub-pulse width 212.
  • the ringing width 220 is a greater time interval than the first sub-pulse width 212.
  • Each RF voltage ringing associated with the respective preceding pulse is a series of micro pulses and each micro pulse has a smaller amplitude than an amplitude of the preceding pulse.
  • a maximum amplitude of the pulse 204A is V6 and a maximum amplitude of the RF voltage ringing 208A is -V4.
  • each micro pulse of the RF voltage ringing associated with the respective preceding pulse has a smaller micro pulse width than the first sub-pulse width 212 of the preceding pulse.
  • An example of a micro pulse width, as described herein, is a time interval of occurrence of a micro pulse of the square pulse waveform 202.
  • An example of an amplitude, as described herein, is a maximum amplitude or a peak-to-peak amplitude.
  • the micro pulse width of the RF voltage ringing associated with the respective preceding pulse is outside the range of the first sub-pulse width 212.
  • the micro pulse width is substantially less than the first sub-pulse width 212.
  • the micro pulse width reduces with a progression of the RF voltage ringing 208A or 208B.
  • each RF voltage ringing such as the RF voltage ringing 210A and the RF voltage ringing 210B, associated with a respective preceding sub-pulse of the square pulse waveform 202 has a ringing width 222, which is greater than the second sub-pulse width 216.
  • the ringing width 222 has a greater time interval than the second sub-pulse width 216.
  • Each RF voltage ringing associated with the respective preceding sub-pulse is a series of micro pulses and each micro pulse has a smaller amplitude than an amplitude of the preceding sub-pulse.
  • a maximum amplitude of the sub-pulse 206 A is V0 and a maximum amplitude of the RF voltage ringing 210A is -V3.5.
  • each micro pulse of the RF voltage ringing associated with the respective preceding sub-pulse has a smaller micro pulse width than the second sub-pulse width 216 of the preceding sub-pulse.
  • the micro pulse width of the RF voltage ringing associated with the respective preceding sub-pulse is outside the range of the second sub-pulse width 216.
  • the micro pulse width is substantially less than the second sub-pulse width 216.
  • the micro pulse width reduces with a progression of the RF voltage ringing 210A or 210B.
  • the second sub-pulse width 216 is less than the first sub-pulse width 212.
  • the second sub-pulse width 216 is at least 10% lower than the first sub-pulse width 212.
  • the second sub-pulse width 216 is 10% to 80% less than the first sub-pulse width 212.
  • the square pulse waveform 202 also has a pulse width 224, which is a width between maximum amplitudes of two consecutive pulses of the square pulse waveform 202.
  • the pulse width 224 is a time interval between the time t2 at which the pulse 204A has the voltage value V6 and the time t22 at which the consecutive or adjacent pulse 204B has the voltage value V6.
  • the pulse width 224 occurs between any two alternate ones of the cycles n, (n+1), (n+2) and (n+3).
  • the pulse width 224 between the cycles n and (n+2) is equal to the pulse width 224 between the cycle (n+2) and a cycle (n+4) (not shown) of the clock signal 201 ( Figure 2A).
  • the pulse width 224 between the cycles n and (n+2) is within +10% from the pulse width 224 between the cycles (n+2) and (n+4).
  • the pulse width 224 provides the low frequency of the square pulse waveform 202.
  • the low frequency is an inverse of the pulse width 224.
  • the pulse width 226 is a width between maximum amplitudes of two consecutive sub-pulses of the square pulse waveform 202.
  • the pulse width 226 is a time interval between the time tl0.5 at which the subpulse 206A has the voltage value V0 and the time t30.5 at which the sub-pulse 206B has the voltage value V0.
  • the sub-pulses of the square pulse waveform 202 increase an amount of low energy ions of the plasma formed within the gap 118 ( Figure 1)
  • Figure 2C is a graph 250 to illustrate a square pulse waveform 252 to provide an example of an increase in a peak value of each sub-pulse of the square pulse waveform 202 ( Figure 2A) with a decrease in the second sub-pulse width 216 ( Figure 2A).
  • the square pulse waveform 252 is another example of the square pulse waveform 132 ( Figure 1).
  • the graph 250 plots voltage of the square pulse waveform 252 versus the time t.
  • the voltage of the square pulse waveform 252 is plotted on a y-axis of the graph 250 and the time t is plotted on an x-axis of the graph 250.
  • the x- axis of the graph 250 is the same as the x-axis of the graph 201 ( Figure 2A) and the y-axis of the graph 250 is the same as the y-axis of the graph 200 ( Figure 2B).
  • the square pulse waveform 252 is the same as the square pulse waveform 202 ( Figure 2B) except that the square pulse waveform 252 has a smaller third sub-pulse width 258 compared to the second sub-pulse width 216.
  • a peak voltage of sub-pulses, such as a sub-pulse 254A and a sub-pulse 254B, of the square pulse waveform 252 is greater than the peak voltage of the sub-pulses of the square pulse waveform 202.
  • the peak voltage of the sub-pulses of the square pulse waveform 252 is V3, which is greater than the peak voltage VO of the sub-pulses of the square pulse waveform 202.
  • the third sub-pulse width 258 is a time period for which each of the sub-pulses, such as the sub-pulse 254A and the sub-pulse 254B, of the square pulse waveform 252 occur.
  • the sub-pulse 254A extends from the time tlO to the time ti l and the sub-pulse 254B extends from the time t30 to the time t31. Also, at the time tlO, the sub-pulse 254A has the voltage value -V4. The sub-pulse 254A transitions upward from the voltage value -V4 to the peak voltage V3. The upward transition occurs from the time tlO to the time tl0.5, and the peak voltage V3 is achieved by the sub-pulse 254A at the time tl0.5. The sub-pulse 254A transitions downward from the peak voltage to the voltage value -V4, which occurs at the time ti l. The downward transition occurs from the time tl0.5 to the time ti l. Similarly, the sub-pulse 254B extends from the time t30 to the time t31 and achieves the peak voltage V3 at the time t30.5.
  • An RF voltage ringing such as an RF voltage ringing 256 A and an RF voltage ringing 256B, is associated with a respective preceding sub-pulse of the square pulse waveform 252.
  • each sub-pulse of the square pulse waveform 252 is immediately followed by RF voltage ringing.
  • the sub-pulse 254A precedes RF voltage ringing 256A and the subpulse 254B precedes RF voltage ringing 256B.
  • a ringing width 260 of each RF voltage ringing associated with the respective preceding sub-pulse of the square pulse waveform 252 is greater than the ringing width 222 ( Figure 2B).
  • the ringing width 260 is greater than the ringing width 222.
  • Figure 2D is a graph 270 to illustrate a square pulse waveform 272 to provide an example of a decrease in a peak value of each sub-pulse of the square pulse waveform 202 ( Figure 2A) with an increase in the second sub-pulse width 216 ( Figure 2A).
  • the square pulse waveform 272 is yet another example of the square pulse waveform 132 ( Figure 1).
  • the graph 270 plots voltage of the square pulse waveform 272 versus the time t.
  • the voltage of the square pulse waveform 272 is plotted on a y-axis of the graph 270 and the time t is plotted on an x-axis of the graph 270.
  • the x-axis of the graph 270 is the same as the x-axis of the graph 201 ( Figure 2A) and the y-axis of the graph 270 is the same as the y-axis of the graph 200 ( Figure 2B).
  • the square pulse waveform 272 is the same as the square pulse waveform 202 ( Figure 2B) except that the square pulse waveform 272 has a greater fourth sub-pulse width 278 compared to the second sub-pulse width 216.
  • a peak voltage of sub-pulses, such as a sub-pulse 274A and a subpulse 274B, of the square pulse waveform 272 is lower than the peak voltage of the sub-pulses of the square pulse waveform 202.
  • the peak voltage of the sub-pulses of the square pulse waveform 272 is -VI, which is less than the peak voltage VO of the sub-pulses of the square pulse waveform 202.
  • the fourth sub-pulse width 272 is a time period for which each of the sub-pulses, such as the sub-pulse 274A and the sub-pulse 274B, of the square pulse waveform 272 occur.
  • the sub-pulse 274A extends from the time tlO to the time tl3 and the sub-pulse 274B extends from the time t30 to the time t33. Also, at the time tlO, the sub-pulse 274A has the voltage value -V4. The sub-pulse 274A transitions upward from the voltage value -V4 to the peak voltage -VI. The upward transition occurs from the time 110 to the time til, and the peak voltage - VI is achieved by the sub-pulse 274A at the time ti l. The sub-pulse 274A transitions downward from the peak voltage to the voltage value -V4, which occurs at the time tl3. The downward transition occurs from the time ti l to the time tl3. Similarly, the sub-pulse 274B extends from the time t30 to the time t33 and achieves the peak voltage -VI at the time t31.
  • An RF voltage ringing such as an RF voltage ringing 276 A and an RF voltage ringing 276B, is associated with a respective preceding sub-pulse of the square pulse waveform 272.
  • each sub-pulse of the square pulse waveform 272 is immediately followed by RF voltage ringing.
  • the sub-pulse 274A precedes RF voltage ringing 276A and the subpulse 274B precedes RF voltage ringing 276B.
  • a ringing width 280 of each RF voltage ringing associated with the respective preceding sub-pulse of the square pulse waveform 272 is less than the ringing width 222 ( Figure 2B).
  • the fourth sub-pulse width 278 is greater than the second sub-pulse width 216, the ringing width 280 is less than the ringing width 222.
  • FIG. 3 is a block diagram of an embodiment of a system 300 to illustrate a method for controlling the LF RF pulse generator 104.
  • the system 300 includes the controller 102 and the LF RF pulse generator 104.
  • the transfer cable 120 includes a channel 302 and a channel 304.
  • An example of a channel includes a logical connection, such as a frequency range, for transferring data.
  • data sent via the channel 302 is multiplexed with data sent via the channel 304.
  • the processor 108 of the controller 102 executes a method 306 for controlling the LF RF pulse generator 104 to generate the square pulse waveform 132.
  • the method 306 includes an operation 308 of producing one or more instructions for the LF RF pulse generator 104 to generate pulses, such as the pulse 204A and the pulse 204B ( Figure 2A), periodically at the low frequency to have the pulse width 224 ( Figure 2A).
  • the one or more instructions of the operation 308 further indicate that each of the pulses such as the pulse 204A and the pulse 204B, is to be generated to have the first sub-pulse width 212 ( Figure 2A).
  • the one of more instructions of the operation 308 include a command for generating the pulse 204A having the first sub-pulse width 212.
  • the one or more instructions of the operation 308 include a command for generating the pulse 204B having the first sub-pulse width 212.
  • the command for generating the pulse 204B is to generate the pulse 204B at a time of end of the pulse width 224.
  • the pulse width 224 provides the period for generating the pulses of the square pulse waveform 132.
  • the pulse width 224 and the first sub-pulse width 212 are received from a user via an input device, such as a mouse, a keyboard, a keypad, a touchscreen, a stylus, or a combination thereof.
  • the input device is coupled to the processor 108 via an input/output interface.
  • the method 306 further includes an operation 310 of producing one or more instructions for the LF RF pulse generator 104 to wait for a predetermined amount of phase delay, such as the ringing width 220 ( Figure 2A), after generating each of the respective pulses, such as the pulse 204A or the pulse 204B, of the square pulse waveform 132.
  • the one or more instructions include a command to wait for the predetermined amount of phase delay after generating the pulse 204A and a command to wait for the predetermined amount of phase delay after generating the pulse 204B.
  • the predetermined amount of phase delay is sometimes referred to herein as a predetermined amount of time.
  • the one or more instructions of the operation 310 include a command to determine whether the predetermined amount of phase delay has passed since each of the pulses of the square pulse waveform 132 is generated. If the predetermined amount of phase delay has not passed, the one or more instructions of the operation 310 include a command to wait for passage of the predetermined amount of phase delay. On the other hand, if the predetermined amount of phase delay has passed, the method 306 proceeds to an operation 312. As an example, the ringing width 220 is received from the user via the input device. As another example, the ringing width 220 is empirical data determined through experimentation.
  • the method 306 includes the operation 312 of producing one or more instructions for the LF RF pulse generator 104 to generate a respective one of the sub-pulses, such as the sub-pulse 206 A ( Figure 2A) or the sub-pulse 206B, having the second sub-pulse width 216 ( Figure 2 A) after the predetermined amount of phase delay has passed.
  • the sub-pulses of the operation 312 are of the square pulse waveform 132.
  • the one or more instructions of the operation 312 include a command for generating the sub-pulse 206A at the predetermined amount of phase delay after the pulse 204A is generated.
  • the one or more instructions of the operation 312 include a command for generating the sub-pulse 206B at the predetermined amount of phase delay after the pulse 204B is generated.
  • the instructions of the operations 308 and 310 are sent by the processor 108 via the channel 302 to the LF RF pulse generator 104 and the one or more instructions of the operation 312 are sent by the processor 108 via the channel 304 to the LF RF pulse generator 104.
  • the processor of the LF RF pulse generator 104 Upon receiving the instructions of the operations 308, 310, and 312, the processor of the LF RF pulse generator 104 stores the instructions and the information regarding the square pulse waveform 202 in the memory device of the LF RF pulse generator 104.
  • the processor of the LF RF pulse generator 104 Upon receiving the trigger signal 134, the processor of the LF RF pulse generator 104 accesses the instructions of the operations 308, 310, and 312 and the information regarding the square pulse waveform 202 from the memory device of the LF RF pulse generator 104, and controls the signal components of the LF RF pulse generator 104 to generate the square pulse waveform 132 according to the instructions and the information regarding the square pulse waveform 202.
  • the square pulse waveform 132 is sent from the signal components via the RF cable 124 for supply to the plasma chamber 106 ( Figure 1).
  • the method 306 includes an operation 314 of producing one or more instructions to modify the second sub-pulse width 216.
  • the processor 108 generates a command to decrease the second sub-pulse width 216 to the third sub-pulse width 258 ( Figure 2C).
  • the processor 108 generates a command to increase the second sub-pulse width 216 to the fourth sub-pulse width 278 ( Figure 2D).
  • the one or more instructions of the operation 314 arc produced when an input to modify the second sub-pulse width 216 is received from the input device.
  • the input to modify the second sub-pulse width 216 is generated by the input device when the user makes one or more selections via the input device.
  • the input received from the input device includes the second sub-pulse width 216 or the third sub-pulse width 258.
  • the processor 108 sends the one or more instructions of the operation 314 via the channel 304 to the processor of the LF RF pulse generator 104.
  • the LF RF pulse generator 104 modifies the second sub-pulse width 216 to another sub-pulse width, such as the third sub-pulse width 258 or the fourth sub-pulse width 278, to output another square pulse waveform, such as the square pulse waveform 252 ( Figure 2C) or the square pulse waveform 272 ( Figure 2D).
  • the one or more instructions of the operation 308 are sent by the processor 108 via the channel 302 to the LF RF pulse generator 104 and the instructions of the operations 310 and 312 are sent by the processor 108 via the channel 304 to the LF RF pulse generator 104.
  • FIG 4 is a diagram of an embodiment of a system 400 to illustrate a control of the LF RF pulse generator 104 by the processor 108 ( Figure 1) of the controller 102.
  • the system 400 includes the controller 102 and the LF RF pulse generator 104.
  • the LF RF pulse generator 104 includes signal components 402 and a controller 404.
  • the signal components 402 include a voltage and source regulator 406, a power storage 408, and a switch and transformer system 410.
  • RF voltage ringing is noise due to one or more of the signal components 402.
  • An example of the voltage source and regulator 302 includes a combination of a voltage supply, such as a direct current (DC) voltage supply, and a voltage regulator, such as a variable resistor.
  • the voltage supply is coupled to the voltage regulator.
  • An example of the switch and transformer system 410 includes a combination of a switch, such as a solid-state switch, and a transformer.
  • An illustration of the solid-state switch is a transistor or a group of transistors.
  • the solid-state switch is coupled to the transformer.
  • the transformer includes a primary winding and a secondary winding.
  • An example of the power storage 408 includes a capacitor.
  • the controller 404 includes a processor 412 and a memory device 414.
  • the processor 412 is coupled to the memory device 414.
  • the controller 404 is an ASIC or a PLD.
  • the processor 108 of the controller 102 is coupled to the processor 412 via the transfer cable 120.
  • the processor 412 is coupled to the switch of the switch and transformer system 410.
  • the voltage regulator of the voltage source and regulator 302 is coupled to the power storage 408.
  • the power storage 408 is coupled to the transformer and the switch is coupled to the transformer.
  • the power storage 408 is coupled to a first end of the primary winding and the switch is coupled to a second end of the primary winding.
  • the secondary winding of the transformer is coupled to the RF cable 138.
  • the processor 412 Upon receiving the instructions of the operations 308, 310, and 312, and the information regarding the square pulse waveform 202 within the recipe signal 130 from the processor 108, the processor 412 stores the instructions and the information within the memory device 414.
  • the voltage supply generates a voltage signal and supplies the voltage signal to the voltage regulator.
  • the voltage regulator regulates the voltage signal, such as maintains the voltage signal to match a predetermined voltage signal, to output a regulated voltage signal, and sends the regulated voltage signal to the power storage 408.
  • the power storage 408 stores a charge according to the regulated voltage signal.
  • the processor 412 accesses the first sub-pulse width 212 ( Figure 2B) and the instructions of the operations 308 and 310 ( Figure 3) from the memory device 414.
  • the processor 412 To control the signal components 402 according to the one or more instructions of the operation 308, the processor 412 generates an on command signal, and sends the on command signal to the switch.
  • the switch turns on and a switch current signal generated to discharge the charge stored in the power storage 408 is supplied to the primary winding of the transformer for the time period of the first sub-pulse width 212.
  • the secondary winding transforms, such as increases or decreases, an amount of voltage of the switch current signal to a different amount to output a transformed amount of voltage to start generating the pulse 204A ( Figure 2B).
  • the transformed amount of voltage is of the pulse 204A.
  • the processor 412 At the end of the time period of the first sub-pulse width 212, the processor 412 generates an off command signal, and sends the off command signal to the switch.
  • the switch Upon receiving the off command signal, the switch turns off and the supply of the switch current signal to the primary winding stops.
  • the voltage applied by the switch current signal drops to reduce the voltage across the primary winding.
  • the transformed amount of voltage reduces to end the generation of the pulse 204A to output a reduced transformed amount of voltage.
  • the reduced transformed amount of voltage is of the RF voltage ringing 208 A ( Figure 2A).
  • the processor 412 determines, based on timing provided by the clock signal 202, whether the predetermined amount of phase delay has occurred since the off command signal is sent from the processor 412 to the switch. Upon determining that the predetermined amount of phase delay has occurred, the processor 412 access the one or more instructions of the operation 312 and the second sub-pulse width 216 from the memory device 414 to control the signal components 402 based on the one or more instructions of the operation 312.
  • the processor 412 To control the signal components 402 based on the one or more instructions of the operation 312, the processor 412 generates an on command signal, and sends the on command signal to the switch.
  • the switch turns on and a switch current signal generated to discharge the charge stored in the power storage 408 is supplied to the primary winding of the transformer for the time period of the second sub-pulse width 216.
  • the secondary winding transforms, such as increases or decreases, an amount of voltage of the switch current signal to a different amount to output a transformed amount of voltage to start generating the sub-pulse 206A ( Figure 2B).
  • the transformed amount of voltage is a voltage of the sub-pulse 206A.
  • the processor 412 At the end of the time period of the second sub-pulse width 216, the processor 412 generates an off command signal, and sends the off command signal to the switch.
  • the switch Upon receiving the off command signal of the operation 312, the switch turns off and the supply of the switch current signal to the primary winding stops.
  • the voltage applied by the switch current signal drops to reduce the voltage across the primary winding.
  • the transformed amount of voltage reduces to end the generation of the sub-pulse 206A to output a reduced transformed amount of voltage.
  • the reduced transformed amount of voltage is of the RF voltage ringing 210A ( Figure 2A).
  • the processor 412 After sending the off command signal at the end of the time period of the second sub-pulse width, the processor 412 accesses the pulse width 224 from the memory device 414 and determines, based on the one or more instructions of the operation 308 and the pulse width 224, whether the time period of the pulse width 224 ( Figure 2B) has occurred after the on command signal for generating the pulse 204A is sent to the switch. Upon determining that the pulse width 224 has occurred since the on command for generating the pulse 204A is sent, the processor 412 determines to generate an on command signal for generating the pulse 204B ( Figure 2A). In this manner, the pulses and the sub-pulses of the square pulse waveform 202 repeat.
  • the processor 412 upon receiving the one or more instructions of the operation 314 ( Figure 3) to modify the second sub-pulse width 216 to the other sub-pulse width, stores the other sub-pulse width within the memory device 414 and determines whether an end of RF voltage ringing associated with the respective preceding pulse has occurred. For example, the processor 412 determines, based on the clock signal 202, whether an end of the predetermined amount of phase delay of the ringing width 220 occurring immediately after the pulse 204B ( Figure 2B) has occurred.
  • the processor 412 accesses the other sub-pulse width from the memory device 414 and generates an on command signal and an off command signal based on the other sub-pulse width.
  • the on and off command signals are generated in the same manner in which the on and off commands signals for generating the second sub-pulse width 216 are generated except that the off command signal for the other sub-pulse width is generated at an end of the time period of the other sub-pulse width.
  • one or more instructions for generating the other subpulse width are produced by the processor 108.
  • the one or more instructions for generating the other sub-pulse width are sent from the processor 108 via the transfer cable 120 to the processor 412.
  • the processor 412 generates an on command signal and an off command signal and controls the signal components 402 to generate a sub-pulse having the other sub-pulse width in the same manner in which the on and off command signals are applied to control the signal components 402 to generate each of the subpulses having the second sub-pulse width 216.
  • Figure 5 is a graph 500 to illustrate that selectivity, such as mask selectivity, increases with an increase in voltage of the sub-pulses of the square pulse waveform 202 ( Figure 2B).
  • An example of the mask selectivity is a ratio of a rate at which a mask layer of the substrate S is etched to a rate at which a layer of the substrate S desired to be etched or a feature of the substrate S desired to be etched is etched.
  • the graph 500 plots etch rates of etching the substrate S ( Figure 1) on a first y-axis, the selectivity on a second y-axis, and kilovolts (kV) of the sub-pulses of the square pulse waveform 202.
  • Figure 6 is a graph 600 to illustrate that a voltage of the bottom plasma sheath 115B (Figure 1) changes with introduction of the sub-pulses of the square pulse waveform 202 ( Figure 2B).
  • the graph 600 plots the voltage of the bottom plasma sheath 115B versus the time t.
  • the sub-pulses of the square pulse waveform 202 are included in the square pulse waveform 202 in addition to the pulses of the square pulse waveform 202, there is a decrease in a voltage of the bottom plasma sheath 115B compared to when only the pulses are used in a square pulse waveform.
  • the voltage of the bottom plasma sheath 115B is controlled using the sub-pulses of the square pulse waveform 202.
  • the controller is defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like.
  • the integrated circuits include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as ASICs, PLDs, and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software).
  • the program instructions are instructions communicated to the controller in the form of various individual settings (or program files), defining the parameters, the factors, the variables, etc., for carrying out a particular process on or for a semiconductor wafer or to a system.
  • the program instructions are, in some embodiments, a part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.
  • example systems to which the methods are applied include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that is associated or used in the fabrication and/or manufacturing of semiconductor wafers.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • ALE atomic layer etch
  • the above-described operations apply to several types of plasma chambers, e.g., a plasma chamber including an inductively coupled plasma (ICP) reactor, a transformer coupled plasma chamber, conductor tools, dielectric tools, a plasma chamber including an electron cyclotron resonance (ECR) reactor, etc.
  • ICP inductively coupled plasma
  • ECR electron cyclotron resonance
  • one or more RF generators are coupled to an inductor within the ICP reactor.
  • a shape of the inductor include a solenoid, a dome-shaped coil, a flat-shaped coil, etc.
  • Some of the embodiments also relate to a hardware unit or an apparatus for performing these operations.
  • the apparatus is specially constructed for a special purpose computer.
  • the computer When defined as a special purpose computer, the computer performs other processing, program execution or routines that are not part of the special purpose, while still being capable of operating for the special purpose.
  • One or more embodiments can also be fabricated as computer-readable code on a non-transitory computer-readable medium.
  • the non-transitory computer-readable medium is any data storage hardware unit, e.g., a memory device, etc., that stores data, which is thereafter be read by a computer system. Examples of the non-transitory computer-readable medium include hard drives, network attached storage (NAS), ROM, RAM, compact disc-ROMs (CD-ROMs), CD- recordables (CD-Rs), CD-rewritables (CD-RWs), magnetic tapes and other optical and non-optical data storage hardware units.
  • the non-transitory computer-readable medium includes a computer-readable tangible medium distributed over a network-coupled computer system so that the computer-readable code is stored and executed in a distributed fashion.

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Abstract

L'invention concerne des systèmes et des procédés de commande d'un générateur d'impulsions radiofréquence (RF) basse fréquence (LF) pour augmenter la sélectivité. L'un des procédés consiste à commander le générateur d'impulsions RF LF pour générer une pluralité d'impulsions carrées qui sont intercalées avec une pluralité de sous-impulsions carrées. Chacune de la pluralité d'impulsions carrées a une première largeur de sous-impulsion qui est supérieure à une seconde largeur de sous-impulsion de chacune de la pluralité de sous-impulsions carrées.
PCT/US2023/083011 2022-12-14 2023-12-07 Systèmes et procédés de commande d'un générateur d'impulsions rf lf pour augmenter la sélectivité WO2024129517A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010103465A (ja) * 2008-09-24 2010-05-06 Toshiba Corp 基板処理装置および基板処理方法
US20150076111A1 (en) * 2013-09-19 2015-03-19 Globalfoundries Inc. Feature etching using varying supply of power pulses
US20200234921A1 (en) * 2019-01-22 2020-07-23 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
EP2416629B1 (fr) * 2009-08-07 2021-04-21 Kyosan Electric Mfg. Co. Ltd Procédé de commande de puissance haute fréquence modulé par impulsions et dispositif de source de puissance haute fréquence modulé par impulsions
US11315757B2 (en) * 2019-08-13 2022-04-26 Mks Instruments, Inc. Method and apparatus to enhance sheath formation, evolution and pulse to pulse stability in RF powered plasma applications

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010103465A (ja) * 2008-09-24 2010-05-06 Toshiba Corp 基板処理装置および基板処理方法
EP2416629B1 (fr) * 2009-08-07 2021-04-21 Kyosan Electric Mfg. Co. Ltd Procédé de commande de puissance haute fréquence modulé par impulsions et dispositif de source de puissance haute fréquence modulé par impulsions
US20150076111A1 (en) * 2013-09-19 2015-03-19 Globalfoundries Inc. Feature etching using varying supply of power pulses
US20200234921A1 (en) * 2019-01-22 2020-07-23 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11315757B2 (en) * 2019-08-13 2022-04-26 Mks Instruments, Inc. Method and apparatus to enhance sheath formation, evolution and pulse to pulse stability in RF powered plasma applications

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