WO2024125230A1 - Radio frequency power amplifier and radio frequency module - Google Patents

Abstract

The present invention provides a radio frequency power amplifier and a radio frequency module. The radio frequency power amplifier comprises a base plate input unit, a power amplifier unit and a base plate output unit; the power amplifier unit comprises a first input radio frequency matching network, a first driver-stage power amplifier, a first inter-stage matching network, a first amplifier-stage power amplifier, a second input radio frequency matching network, a second driver-stage power amplifier, a second inter-stage matching network, a second amplifier-stage power amplifier, a twelfth capacitor, a thirteenth capacitor and a ninth capacitor; the first input radio frequency matching network comprises a third capacitor and a third inductor; the first inter-stage matching network comprises a seventh inductor, a fifth capacitor, a fifth inductor and a seventh capacitor; the second input radio frequency matching network comprises a fourth capacitor and a fourth inductor; the second inter-stage matching network comprises an eighth inductor, a sixth capacitor, a sixth inductor and an eighth capacitor. The technical solution of the present invention achieves a wide operating bandwidth, and a good harmonic suppression effect when the output power is high.

Description

A radio frequency power amplifier and a radio frequency module Technical Field

The present invention relates to the field of circuit technology, and in particular to a radio frequency power amplifier and a radio frequency module.

Background technique

At present, in satellite communication systems, the RF front end has a great impact on the communication quality, among which the RF power amplifier is a key component of the RF front end.

The radio frequency power amplifier of the related art generally includes a driver amplifier, a first input matching network, a carrier power amplifier, a second input matching network, a peak power amplifier, a first output matching network and a second output matching network.

However, the RF power amplifier of the related technology is used in satellite communication systems. Modern satellite communication is mainly used in areas that cannot be covered by ordinary mobile communication signals (such as uninhabited areas, deserts, oceans, polar regions, etc.) or when communication base stations are damaged (such as earthquakes, floods, typhoons, etc.). Since the communication environment is more severe and complex, and the communication distance between the terminal and the satellite is farther than that of the cellular mobile network, the accuracy and stability of the communication system are particularly critical. When the handheld wireless terminal is working normally, it can directly transmit information bidirectionally with the satellite and the ground monitoring station through satellite signals, and the communication mode is based on short messages as the basic transmission unit. Compared with cellular mobile communication, due to the longer distance, the RF power amplifier, as a key component of the RF front end, needs to output higher saturation power. When the RF power amplifier module is working at high power output and saturation output, it is difficult to achieve a wider working bandwidth and higher harmonic suppression at the same time.

Therefore, it is necessary to provide a new RF power amplifier and module to solve the above problems.

Summary of the invention

In view of the above deficiencies in the prior art, the present invention proposes a radio frequency power amplifier and a radio frequency module with a high operating bandwidth and good harmonic suppression effect when the output power is high.

In order to solve the above technical problems, in a first aspect, an embodiment of the present invention provides a radio frequency power amplifier, wherein the radio frequency power amplifier comprises a substrate input unit, a power amplifier unit and a substrate output unit connected in sequence;

The substrate input unit is used to receive an external single-ended signal and convert it into two first signals with the same power and a phase difference of 180°;

The power amplifier unit is used to amplify the power of the two first signals to generate two second signals;

The substrate output unit is used for receiving the two second signals, performing power synthesis and converting them into a third signal, and suppressing the harmonics of the third signal before outputting it;

The power amplifier unit includes a first input RF matching network, a first driver stage power amplifier, a first interstage matching network, a first amplifier stage power amplifier, a second input RF matching network, a second driver stage power amplifier, a second interstage matching network, a second amplifier stage power amplifier, a twelfth capacitor, a thirteenth capacitor and a ninth capacitor; the first input RF matching network includes a third capacitor and a third inductor; the first interstage matching network includes a seventh inductor, a fifth capacitor, a fifth inductor and a seventh capacitor; the second input RF matching network includes a fourth capacitor and a fourth inductor; the second interstage matching network includes an eighth inductor, a sixth capacitor, a sixth inductor and an eighth capacitor;

The first end of the third capacitor serves as the first input end of the power amplifier unit, and the first end of the third capacitor is connected to the first end of the third inductor, and the second end of the third inductor is grounded;

The second end of the third capacitor is connected to the input end of the first driving stage power amplifier;

The output end of the first driving stage power amplifier is respectively connected to the second end of the seventh inductor and the first end of the fifth capacitor;

The first end of the seventh inductor is respectively connected to the first power supply voltage, the first end of the eighth inductor, the first end of the twelfth capacitor and the first end of the thirteenth capacitor, the second end of the twelfth capacitor is grounded, and the second end of the thirteenth capacitor is grounded;

The second end of the fifth capacitor is connected to the first end of the fifth inductor and the first end of the seventh capacitor respectively, and the second end of the fifth inductor is grounded;

The second end of the seventh capacitor is connected to the input end of the first amplifier stage power amplifier;

The output end of the first amplifier stage power amplifier serves as the first output end of the power amplifier unit, and the output end of the first amplifier stage power amplifier is connected to the first end of the ninth capacitor;

The first end of the fourth capacitor serves as the second input end of the power amplifier unit, and the first end of the fourth capacitor is connected to the first end of the fourth inductor, and the second end of the fourth inductor is grounded;

The second end of the fourth capacitor is connected to the input end of the second driving stage power amplifier;

The output end of the second driving stage power amplifier is respectively connected to the second end of the eighth inductor and the first end of the sixth capacitor;

The second end of the sixth capacitor is connected to the first end of the sixth inductor and the first end of the eighth capacitor respectively, and the second end of the sixth inductor is grounded;

The second end of the eighth capacitor is connected to the input end of the second amplifier stage power amplifier;

The output end of the second amplification stage power amplifier serves as the second output end of the power amplifier unit, and the output end of the second amplification stage power amplifier is connected to the second end of the ninth capacitor.

Preferably, the substrate input unit is an LC concentrated balun.

Preferably, the substrate input unit includes a first capacitor, a second capacitor, a first inductor and a second inductor;

The first end of the first capacitor serves as the input end of the substrate input unit, and the first end of the first capacitor is connected to the first end of the second inductor;

The second end of the first capacitor serves as the first output end of the substrate input unit, and the second end of the first capacitor is connected to the first end of the first inductor, and the second end of the first inductor is grounded;

The second end of the second inductor serves as the second output end of the substrate input unit, and the second end of the second inductor is connected to the first end of the second capacitor, and the second end of the second capacitor is grounded.

Preferably, the substrate output unit includes a transformer, a tenth capacitor, an eleventh capacitor, a fourteenth capacitor, a series resonant network and an output matching circuit;

The series resonant network is used to suppress harmonics above the fourth order;

The output matching circuit is used to match the output impedance;

The first end of the primary coil of the transformer serves as the first input end of the substrate output unit; the second end of the primary coil of the transformer serves as the second input end of the substrate output unit;

The center tap end of the primary coil of the transformer is connected to the first end of the tenth capacitor, the first end of the fourteenth capacitor and the second power supply voltage, the second end of the tenth capacitor is grounded, and the second end of the fourteenth capacitor is grounded;

The first end of the secondary coil of the transformer is connected to the interface end of the series resonant network and the input end of the output matching circuit respectively;

The second end of the secondary coil of the transformer is connected to the first end of the eleventh capacitor, and the second end of the eleventh capacitor is grounded;

The output end of the output matching circuit serves as the output end of the substrate output unit.

Preferably, the series resonant network includes a fifteenth capacitor, a sixteenth capacitor, a ninth inductor and a tenth inductor;

The first end of the fifteenth capacitor serves as an interface end of the series resonant network, and the first end of the fifteenth capacitor is connected to the first end of the sixteenth capacitor;

The second end of the fifteenth capacitor is connected to the first end of the ninth inductor, and the second end of the ninth inductor is grounded;

The second end of the sixteenth capacitor is connected to the first end of the tenth inductor, and the second end of the tenth inductor is grounded.

Preferably, the output matching circuit comprises a first low-pass matching network, a second low-pass matching network, a third low-pass matching network and a band-stop matching network which are connected in sequence.

Preferably, the first low-pass matching network includes an eleventh inductor, a seventeenth capacitor, and a twelfth inductor;

The second low-pass matching network includes a thirteenth inductor, an eighteenth capacitor, and a fourteenth inductor;

The third low-pass matching network includes a fifteenth inductor, a nineteenth capacitor, a sixteenth inductance;

The band-stop matching network includes a twentieth capacitor and a seventeenth inductor;

The first end of the eleventh inductor serves as the input end of the output matching circuit;

The second end of the eleventh inductor is connected to the first end of the seventeenth capacitor and the first end of the thirteenth inductor respectively; the second end of the seventeenth capacitor is connected to the first end of the twelfth inductor, and the second end of the twelfth inductor is grounded;

The second end of the thirteenth inductor is connected to the first end of the eighteenth capacitor and the first end of the fifteenth inductor respectively; the second end of the eighteenth capacitor is connected to the first end of the fourteenth inductor, and the second end of the fourteenth inductor is grounded;

The second end of the fifteenth inductor is respectively connected to the first end of the nineteenth capacitor, the first end of the twentieth capacitor and the first end of the seventeenth inductor; the second end of the nineteenth capacitor is connected to the first end of the sixteenth inductor, and the second end of the sixteenth inductor is grounded;

The second end of the twentieth capacitor serves as the input end of the output matching circuit, and the second end of the twentieth capacitor is connected to the second end of the seventeenth inductor.

Preferably, the third capacitor, the fourth capacitor, the fifth capacitor, the sixth capacitor, the seventh capacitor, the eighth capacitor and the ninth capacitor are all STACK capacitors or MIM capacitors.

In a second aspect, an embodiment of the present invention further provides a radio frequency module comprising a substrate and the above-mentioned radio frequency power amplifier provided in the embodiment of the present invention welded to the substrate.

Preferably, the power amplifier unit is a semiconductor chip; the substrate input unit and the substrate output unit are both made of multiple discrete components.

Compared with the related art, the RF power amplifier and RF module of the present invention set a first interstage matching network and a second interstage matching network in the power amplifier unit. Among them, the first interstage matching network includes the seventh inductor, the fifth capacitor, the fifth inductor and the seventh capacitor; the second interstage matching network includes the eighth inductor, the sixth capacitor, the sixth inductor and the eighth capacitor; the first interstage matching network and the second interstage matching network improve the frequency bandwidth of the matching network, thereby improving the working bandwidth of the RF power amplifier, so that the working bandwidth of the RF power amplifier is high. More preferably, the RF power amplifier of the present invention is in the A substrate input unit and a substrate output unit are respectively arranged before and after the power amplifier unit. The differential power amplifier realized by the balun of the substrate input unit and the transformer of the substrate output unit has a differential structure that can also realize the function of enhancing the suppression of even-order harmonics. The series resonant network of the substrate output unit suppresses harmonics above the fourth order; the output matching circuit of the substrate output unit suppresses the second-order harmonics and the third-order harmonics. As a result, the RF power amplifier and RF module of the present invention have good harmonic suppression effect when the output power is high.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be described in detail below in conjunction with the accompanying drawings. The above and other aspects of the present invention will become clearer and easier to understand through the detailed description made in conjunction with the following drawings.

FIG1 is a schematic diagram of a circuit structure of a radio frequency power amplifier of the related art;

FIG2 is a circuit diagram of a substrate input unit of a radio frequency power amplifier of the present invention;

FIG3 is a circuit diagram of a substrate output unit of a radio frequency power amplifier of the present invention;

FIG4 is a graph showing the relationship between gain and frequency of a radio frequency power amplifier provided in an embodiment of the present invention;

FIG5 is a graph showing the relationship between the gain and output power of the RF power amplifier provided in an embodiment of the present invention.

Detailed ways

The specific implementation of the present invention will be described in detail below with reference to the accompanying drawings.

The specific implementation modes/embodiments recorded herein are specific implementation modes of the present invention, which are used to illustrate the concept of the present invention, are explanatory and exemplary, and should not be interpreted as limiting the implementation modes of the present invention and the scope of the present invention. In addition to the embodiments recorded herein, those skilled in the art can also adopt other obvious technical solutions based on the contents disclosed in the claims and the specification of this application, and these technical solutions include any obvious replacement and modification of the embodiments recorded herein, which are within the protection scope of the present invention.

(Example 1)

An embodiment of the present invention provides a radio frequency power amplifier 100 .

Please refer to Fig. 1, which is a schematic diagram of the circuit structure of a radio frequency power amplifier 100 of the related art. Specifically, the radio frequency power amplifier 100 includes a substrate input unit 1, a power amplifier unit 2 and a substrate output unit 3 connected in sequence.

The circuit connection relationship of the RF power amplifier 100 is:

The input end of the substrate input unit 1 serves as the input end RFin of the radio frequency power amplifier 100 .

The first output terminal of the substrate input unit 1 is connected to the first input terminal of the power amplifier unit 2. The second output terminal of the substrate input unit 1 is connected to the second input terminal of the power amplifier unit 2.

The first output end of the power amplifier unit 2 is connected to the first input end of the substrate output unit 3 .

The second output end of the power amplifier unit 2 is connected to the second input end of the substrate output unit 3 .

The output end of the substrate output unit 3 serves as the output end RFout of the RF power amplifier 100 .

The substrate input unit 1 is used to receive an external single-ended signal and convert it into two first signals with the same power and a phase difference of 180°. The substrate input unit 1 is also used for 50 ohm matching of the input terminal RFin of the RF power amplifier 100 .

In this embodiment, the substrate input unit 1 is an LC lumped balun. The advantage of the LC lumped balun is the flexibility of implementation. The substrate input unit 1 is built on an off-chip substrate using SMD components, which effectively reduces the chip area, reduces the dependence on the semiconductor manufacturer's manufacturing process, and saves costs; in addition, the advantage of the LC lumped balun is that it can achieve a 180° phase difference within a larger working frequency bandwidth.

Please refer to Fig. 2, which is a circuit diagram of the substrate input unit 1 of the radio frequency power amplifier 100 of the present invention. Specifically, the substrate input unit 1 includes a first capacitor, a second capacitor, a first inductor and a second inductor.

The circuit connection relationship of the substrate input unit 1 is:

The first end of the first capacitor serves as the input end of the substrate input unit 1 , and the first end of the first capacitor is connected to the first end of the second inductor.

The second end of the first capacitor serves as the first output of the substrate input unit 1 The first capacitor is connected to the first end of the first inductor, and the second end of the first inductor is connected to the ground GND.

The second end of the second inductor serves as the second output end of the substrate input unit 1, and the second end of the second inductor is connected to the first end of the second capacitor. The second end of the second capacitor is grounded GND.

The power amplifier unit 2 is used to amplify the power of the two first signals to generate two second signals.

Specifically, the power amplifier unit 2 includes a first input RF matching network 21, a first driving stage power amplifier DA1, a first inter-stage matching network 22, a first amplifier stage power amplifier PA1, a second input RF matching network 23, a second driving stage power amplifier DA2, a second inter-stage matching network 24, a second amplifier stage power amplifier PA2, a twelfth capacitor C12, a thirteenth capacitor C13 and a ninth capacitor C9.

The first input RF matching network 21 includes a third capacitor C3 and a third inductor L3.

The first inter-stage matching network 22 includes a seventh inductor L7, a fifth capacitor C5, a fifth inductor L5 and a seventh capacitor C7. The first inter-stage matching network 22 forms a CLCL radio frequency matching network.

The second input RF matching network 23 includes a fourth capacitor C4 and a fourth inductor L4.

The second inter-stage matching network 24 includes an eighth inductor L8, a sixth capacitor C6, a sixth inductor L6 and an eighth capacitor C8. The second inter-stage matching network 24 forms another CLCL radio frequency matching network.

In this embodiment, the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5, the sixth capacitor C6, the seventh capacitor C7, the eighth capacitor C8 and the ninth capacitor C9 are all STACK capacitors or MIM capacitors.

The circuit connection relationship of the power amplifier unit 2 is:

The first end of the third capacitor C3 serves as the first input end of the power amplifier unit 2, and the first end of the third capacitor C3 is connected to the first end of the third inductor L3. The second end of the third inductor L3 is grounded GND.

The second end of the third capacitor C3 is connected to the first driver stage power amplifier Input terminal of DA1.

The output end of the first driving stage power amplifier DA1 is connected to the second end of the seventh inductor L7 and the first end of the fifth capacitor C5 respectively.

The first end of the seventh inductor L7 is respectively connected to the first power supply voltage VCC1, the first end of the eighth inductor L8, the first end of the twelfth capacitor C12 and the first end of the thirteenth capacitor C13. The second end of the twelfth capacitor C12 is grounded to GND. The second end of the thirteenth capacitor C13 is grounded to GND.

The second end of the fifth capacitor C5 is connected to the first end of the fifth inductor L5 and the first end of the seventh capacitor C7 respectively. The second end of the fifth inductor L5 is grounded GND.

The second end of the seventh capacitor C7 is connected to the input end of the first amplifier stage power amplifier PA1.

The output end of the first-stage power amplifier PA1 serves as the first output end of the power amplifier unit 2 , and the output end of the first-stage power amplifier PA1 is connected to the first end of the ninth capacitor C9 .

The first end of the fourth capacitor C4 serves as the second input end of the power amplifier unit 2, and the first end of the fourth capacitor C4 is connected to the first end of the fourth inductor L4. The second end of the fourth inductor L4 is grounded GND.

A second end of the fourth capacitor C4 is connected to an input end of the second driving stage power amplifier DA2.

The output end of the second driving stage power amplifier DA2 is connected to the second end of the eighth inductor L8 and the first end of the sixth capacitor C6 respectively.

The second end of the sixth capacitor C6 is connected to the first end of the sixth inductor L6 and the first end of the eighth capacitor C8 respectively. The second end of the sixth inductor L6 is grounded GND.

The second end of the eighth capacitor C8 is connected to the input end of the second amplifier stage power amplifier PA2.

The output end of the second amplifier stage power amplifier PA2 serves as the second output end of the power amplifier unit 2 , and the output end of the second amplifier stage power amplifier PA2 is connected to the second end of the ninth capacitor C9 .

A first inter-stage matching network 22 is set between the first driving stage power amplifier DA1 and the first amplifying stage power amplifier PA1 of the power amplifier unit 2; a second inter-stage matching network 24 is set between the second driving stage power amplifier DA2 and the second amplifying stage power amplifier PA2 of the power amplifier unit 2. Both matching networks adopt double-stage matching, which can improve the frequency bandwidth of the matching network, thereby improving the operating bandwidth of the RF power amplifier 100.

The seventh inductor L7 is connected to the twelfth capacitor C12, and the eighth inductor L8 is connected to the thirteenth capacitor C13. The main function of the twelfth capacitor C12 and the thirteenth capacitor C13 is to provide bypass capacitors for the power supply of the power amplifier unit 2, so that the output power of the RF power amplifier 100 is high.

The substrate output unit 3 is used for receiving the two second signals output by the power amplifier unit 2, performing power synthesis to convert the two second signals into a third signal, and suppressing the harmonics of the third signal before outputting it.

Please refer to FIG. 3 , which is a circuit diagram of the substrate output unit 3 of the RF power amplifier 100 of the present invention.

Specifically, the substrate output unit 3 includes a transformer TF1 , a tenth capacitor C10 , an eleventh capacitor C11 , a fourteenth capacitor C14 , a series resonant network 31 , and an output matching circuit 32 .

The ninth capacitor C9, the tenth capacitor C10 and the eleventh capacitor C11 are respectively used for tuning capacitors of the balanced port of the transformer TF1, and also adjust the output impedance of the first amplifier stage power amplifier PA1 and the output impedance of the second amplifier stage power amplifier PA2. In addition to realizing power synthesis of the two input differential signals, the transformer TF1 also plays the role of a DC blocking capacitor, which can reduce the number of SMDs in the module and save costs.

The differential power amplifier formed by the balun of the substrate input unit 1 and the transformer TF1 of the substrate output unit 3 can not only realize power synthesis and enhance the output power of the RF power amplifier, but its differential structure itself can also realize the function of enhanced suppression of even-order harmonics.

The circuit connection relationship of the substrate output unit 3 is:

The first end of the primary coil of the transformer TF1 serves as the substrate output unit 3 The second end of the primary coil of the transformer TF1 serves as the second input end of the substrate output unit 3 .

The center tap end of the primary coil of the transformer TF1 is connected to the first end of the tenth capacitor C10, the first end of the fourteenth capacitor C14 and the second power supply voltage VCC2. The second end of the tenth capacitor C10 is grounded GND. The second end of the fourteenth capacitor C14 is grounded GND.

The first end of the secondary coil of the transformer TF1 is connected to the interface end of the series resonant network 31 and the input end of the output matching circuit 32 respectively.

A second end of the secondary coil of the transformer TF1 is connected to a first end of the eleventh capacitor C11. A second end of the eleventh capacitor C11 is grounded GND.

The output end of the output matching circuit 32 serves as the output end of the substrate output unit 3 .

The series resonant network 31 is used to suppress harmonics above the fourth order. Specifically, the series resonant network 31 includes a fifteenth capacitor C15, a sixteenth capacitor C16, a ninth inductor L9 and a tenth inductor L10. The ninth inductor L9 and the fifteenth capacitor C15 form a series resonant circuit (Trap), which mainly suppresses harmonics above the fourth order. The tenth inductor L10 and the sixteenth capacitor C16 form another series resonant circuit (Trap), which mainly suppresses harmonics above the fourth order. The fifteenth capacitor C15 and the sixteenth capacitor C16 are respectively used for the balanced port tuning capacitor of the transformer TF1, and also realize the adjustment of the output impedance of the first amplifier stage power amplifier PA1 and the output impedance of the second amplifier stage power amplifier PA2.

The circuit connection relationship of the series resonant network 31 is:

The first end of the fifteenth capacitor C15 serves as an interface end of the series resonant network 31 , and the first end of the fifteenth capacitor C15 is connected to the first end of the sixteenth capacitor C16 .

The second end of the fifteenth capacitor C15 is connected to the first end of the ninth inductor L9. The second end of the ninth inductor L9 is grounded GND.

The second end of the sixteenth capacitor C16 is connected to the first end of the tenth inductor L10. The second end of the tenth inductor L10 is grounded GND.

The output matching circuit 32 is used to match the output impedance.

Specifically, the output matching circuit 32 includes a first low-pass matching circuit connected in sequence network 321 , a second low-pass matching network 322 , a third low-pass matching network 323 and a band-stop matching network 324 .

The first low-pass matching network 321 includes an eleventh inductor L11, a seventeenth capacitor C17, and a twelfth inductor L12. The seventeenth capacitor C17 and the twelfth inductor L12 form a series resonant circuit (Trap), which mainly suppresses the second-order harmonics.

The second low-pass matching network 322 includes a thirteenth inductor L13, an eighteenth capacitor C18, and a fourteenth inductor L14. The eighteenth capacitor C18 and the fourteenth inductor L14 form a series resonant circuit (Trap), which mainly suppresses the second-order harmonics.

The third low-pass matching network 323 includes a fifteenth inductor L15, a nineteenth capacitor C19, and a sixteenth inductor L16. The series resonant circuit (Trap) formed by the nineteenth capacitor C19 and the sixteenth inductor L16 mainly suppresses the third-order harmonics.

The band-stop matching network 324 includes a twentieth capacitor C20 and a seventeenth inductor L17. The parallel resonant circuit (Tank) formed by the twentieth capacitor C20 and the seventeenth inductor L17 mainly suppresses the third-order harmonic.

The circuit connection relationship of the output matching circuit 32 is:

The first end of the eleventh inductor L11 serves as the input end of the output matching circuit 32 .

The second end of the eleventh inductor L11 is connected to the first end of the seventeenth capacitor C17 and the first end of the thirteenth inductor L13 respectively. The second end of the seventeenth capacitor C17 is connected to the first end of the twelfth inductor L12. The second end of the twelfth inductor L12 is grounded GND.

The second end of the thirteenth inductor L13 is connected to the first end of the eighteenth capacitor C18 and the first end of the fifteenth inductor L15 respectively. The second end of the eighteenth capacitor C18 is connected to the first end of the fourteenth inductor L14. The second end of the fourteenth inductor L14 is grounded GND.

The second end of the fifteenth inductor L15 is respectively connected to the first end of the nineteenth capacitor C19, the first end of the twentieth capacitor C20 and the first end of the seventeenth inductor L17. The second end of the nineteenth capacitor C19 is connected to the first end of the sixteenth inductor L16. The second end of the sixteenth inductor L16 is grounded GND.

The second end of the twentieth capacitor C20 serves as the input of the output matching circuit 32. An input terminal, and a second terminal of the twentieth capacitor C20 is connected to a second terminal of the seventeenth inductor L17.

In this embodiment, the inductor implemented in the substrate output unit 3 may be implemented in the form of SMT, winding inductor, or IPD. The capacitor implemented in the substrate output unit 3 may be implemented in the form of SMT or IPD.

In this embodiment, the RF power amplifier 100 is simulated to verify that the operating bandwidth of the RF power amplifier 100 is high. Please refer to Figure 4, which is a gain-frequency relationship curve of the RF power amplifier 100 provided in an embodiment of the present invention. Curve S(1,1) is the input power curve of the RF power amplifier 100, and curve S(2,1) is the output power curve of the RF power amplifier 100. Among them, the frequency of frequency point m7 is 1.616GHz, and the gain dB(S(2,1)) of frequency point m7 is 32.567; the frequency of frequency point m8 is 3.232GHz, and the gain dB(S(2,1)) of frequency point m8 is -60.725; the frequency of frequency point m16 is 4.848GHz, and the gain dB(S(2,1)) of frequency point m16 is -100.900; from the comparison of the gain and frequency of different frequency points m7, m8 and m16 in the figure, it can be seen that the operating bandwidth of the RF power amplifier 100 of the present invention is high.

In this embodiment, the RF power amplifier 100 is simulated to verify that the saturation power of the RF power amplifier 100 is high. Please refer to Figure 5, which is a graph showing the relationship between the gain and output power of the RF power amplifier 100 provided in an embodiment of the present invention. As can be seen from the figure, the saturation power of the RF power amplifier 100 of the present invention is high.

An embodiment of the present invention provides a radio frequency module, which includes a substrate and the radio frequency power amplifier 100 welded to the substrate.

In this embodiment, the power amplifier unit 2 is a semiconductor chip. The substrate input unit 1 and the substrate output unit 3 are both made of multiple discrete components.

The RF module provided in the embodiment of the present invention can realize various implementation methods in the embodiment of the RF power amplifier 100 and the corresponding beneficial effects, which will not be described here to avoid repetition.

It should be pointed out that the relevant circuits, transformers, capacitors, inductors and power amplifiers used in the present invention are all commonly used circuits and components in the field. The corresponding specific indicators and parameters are adjusted according to actual applications and are not described in detail here.

Compared with the related art, the RF power amplifier and RF module of the present invention are The power amplifier unit is provided with a first interstage matching network and a second interstage matching network. Among them, the first interstage matching network includes a seventh inductor, a fifth capacitor, a fifth inductor and a seventh capacitor; the second interstage matching network includes an eighth inductor, a sixth capacitor, a sixth inductor and an eighth capacitor; the first interstage matching network and the second interstage matching network improve the frequency bandwidth of the matching network, thereby improving the working bandwidth of the RF power amplifier, so that the working bandwidth of the RF power amplifier is high. More preferably, the RF power amplifier of the present invention is provided with a substrate input unit and a substrate output unit before and after the power amplifier unit, respectively, and the balun of the substrate input unit and the transformer of the substrate output unit form a differential power amplifier, and its differential structure itself can also realize the function of strengthening the suppression of even-order harmonics. The series resonant network of the substrate output unit suppresses harmonics above the fourth order; the output matching circuit of the substrate output unit suppresses the second-order harmonics and the third-order harmonics. Thereby, the RF power amplifier and the RF module of the present invention have good harmonic suppression effect when the output power is high.

It should be noted that the various embodiments described above with reference to the accompanying drawings are only used to illustrate the present invention rather than to limit the scope of the present invention. Those skilled in the art should understand that any modification or equivalent substitution of the present invention without departing from the spirit and scope of the present invention should be included within the scope of the present invention. In addition, unless otherwise indicated by the context, words appearing in the singular include the plural form, and vice versa. In addition, unless otherwise specified, all or part of any embodiment may be used in combination with all or part of any other embodiment.

Claims (10)

1. A radio frequency power amplifier, characterized in that the radio frequency power amplifier comprises a substrate input unit, a power amplifier unit and a substrate output unit connected in sequence;

   The substrate input unit is used to receive an external single-ended signal and convert it into two first signals with the same power and a phase difference of 180°;

   The power amplifier unit is used to amplify the power of the two first signals to generate two second signals;

   The substrate output unit is used for receiving the two second signals, performing power synthesis and converting them into a third signal, and suppressing the harmonics of the third signal before outputting it;

   The power amplifier unit includes a first input RF matching network, a first driver stage power amplifier, a first interstage matching network, a first amplifier stage power amplifier, a second input RF matching network, a second driver stage power amplifier, a second interstage matching network, a second amplifier stage power amplifier, a twelfth capacitor, a thirteenth capacitor and a ninth capacitor; the first input RF matching network includes a third capacitor and a third inductor; the first interstage matching network includes a seventh inductor, a fifth capacitor, a fifth inductor and a seventh capacitor; the second input RF matching network includes a fourth capacitor and a fourth inductor; the second interstage matching network includes an eighth inductor, a sixth capacitor, a sixth inductor and an eighth capacitor;

   The first end of the third capacitor serves as the first input end of the power amplifier unit, and the first end of the third capacitor is connected to the first end of the third inductor, and the second end of the third inductor is grounded;

   The second end of the third capacitor is connected to the input end of the first driving stage power amplifier;

   The output end of the first driving stage power amplifier is respectively connected to the second end of the seventh inductor and the first end of the fifth capacitor;

   The first end of the seventh inductor is respectively connected to the first power supply voltage, the first end of the eighth inductor, the first end of the twelfth capacitor and the first end of the thirteenth capacitor, the second end of the twelfth capacitor is grounded, and the second end of the thirteenth capacitor is grounded;

   The second end of the fifth capacitor is connected to the first end of the fifth inductor and the first end of the seventh capacitor respectively, and the second end of the fifth inductor is grounded;

   The second end of the seventh capacitor is connected to the input end of the first amplifier stage power amplifier;

   The output end of the first amplifier stage power amplifier serves as the first output end of the power amplifier unit, and the output end of the first amplifier stage power amplifier is connected to the first end of the ninth capacitor;

   The first end of the fourth capacitor serves as the second input end of the power amplifier unit, and the first end of the fourth capacitor is connected to the first end of the fourth inductor, and the second end of the fourth inductor is grounded;

   The second end of the fourth capacitor is connected to the input end of the second driving stage power amplifier;

   The output end of the second driving stage power amplifier is respectively connected to the second end of the eighth inductor and the first end of the sixth capacitor;

   The second end of the sixth capacitor is connected to the first end of the sixth inductor and the first end of the eighth capacitor respectively, and the second end of the sixth inductor is grounded;

   The second end of the eighth capacitor is connected to the input end of the second amplifier stage power amplifier;

   The output end of the second amplification stage power amplifier serves as the second output end of the power amplifier unit, and the output end of the second amplification stage power amplifier is connected to the second end of the ninth capacitor.
2. The radio frequency power amplifier according to claim 1, characterized in that the substrate input unit is an LC concentrated balun.
3. The radio frequency power amplifier according to claim 2, characterized in that the substrate input unit comprises a first capacitor, a second capacitor, a first inductor and a second inductor;

   The first end of the first capacitor serves as the input end of the substrate input unit, and the first end of the first capacitor is connected to the first end of the second inductor;

   The second end of the first capacitor serves as the first output end of the substrate input unit, and the second end of the first capacitor is connected to the first end of the first inductor, and the second end of the first inductor is grounded;

   The second end of the second inductor serves as the second output end of the substrate input unit, and the second end of the second inductor is connected to the first end of the second capacitor. The second terminal of the capacitor is grounded.
4. The radio frequency power amplifier according to claim 1, characterized in that the substrate output unit comprises a transformer, a tenth capacitor, an eleventh capacitor, a fourteenth capacitor, a series resonant network and an output matching circuit;

   The series resonant network is used to suppress harmonics above the fourth order;

   The output matching circuit is used to match the output impedance;

   The first end of the primary coil of the transformer serves as the first input end of the substrate output unit; the second end of the primary coil of the transformer serves as the second input end of the substrate output unit;

   The center tap end of the primary coil of the transformer is connected to the first end of the tenth capacitor, the first end of the fourteenth capacitor and the second power supply voltage, the second end of the tenth capacitor is grounded, and the second end of the fourteenth capacitor is grounded;

   The first end of the secondary coil of the transformer is connected to the interface end of the series resonant network and the input end of the output matching circuit respectively;

   The second end of the secondary coil of the transformer is connected to the first end of the eleventh capacitor, and the second end of the eleventh capacitor is grounded;

   The output end of the output matching circuit serves as the output end of the substrate output unit.
5. The radio frequency power amplifier according to claim 4, characterized in that the series resonant network comprises a fifteenth capacitor, a sixteenth capacitor, a ninth inductor and a tenth inductor;

   The first end of the fifteenth capacitor serves as an interface end of the series resonant network, and the first end of the fifteenth capacitor is connected to the first end of the sixteenth capacitor;

   The second end of the fifteenth capacitor is connected to the first end of the ninth inductor, and the second end of the ninth inductor is grounded;

   The second end of the sixteenth capacitor is connected to the first end of the tenth inductor, and the second end of the tenth inductor is grounded.
6. The RF power amplifier according to claim 4 is characterized in that the output matching circuit includes a first low-pass matching network, a second low-pass matching network, a third low-pass matching network and a band-stop matching network connected in sequence.
7. The radio frequency power amplifier according to claim 6, characterized in that The first low-pass matching network includes an eleventh inductor, a seventeenth capacitor, and a twelfth inductor;

   The second low-pass matching network includes a thirteenth inductor, an eighteenth capacitor, and a fourteenth inductor;

   The third low-pass matching network includes a fifteenth inductor, a nineteenth capacitor, and a sixteenth inductor;

   The band-stop matching network includes a twentieth capacitor and a seventeenth inductor;

   The first end of the eleventh inductor serves as the input end of the output matching circuit;

   The second end of the eleventh inductor is connected to the first end of the seventeenth capacitor and the first end of the thirteenth inductor respectively; the second end of the seventeenth capacitor is connected to the first end of the twelfth inductor, and the second end of the twelfth inductor is grounded;

   The second end of the thirteenth inductor is connected to the first end of the eighteenth capacitor and the first end of the fifteenth inductor respectively; the second end of the eighteenth capacitor is connected to the first end of the fourteenth inductor, and the second end of the fourteenth inductor is grounded;

   The second end of the fifteenth inductor is respectively connected to the first end of the nineteenth capacitor, the first end of the twentieth capacitor and the first end of the seventeenth inductor; the second end of the nineteenth capacitor is connected to the first end of the sixteenth inductor, and the second end of the sixteenth inductor is grounded;

   The second end of the twentieth capacitor serves as the input end of the output matching circuit, and the second end of the twentieth capacitor is connected to the second end of the seventeenth inductor.
8. The RF power amplifier according to claim 1, characterized in that the third capacitor, the fourth capacitor, the fifth capacitor, the sixth capacitor, the seventh capacitor, the eighth capacitor and the ninth capacitor are all STACK capacitors or MIM capacitors.
9. A radio frequency module, characterized in that the radio frequency module comprises a substrate and a radio frequency power amplifier as described in any one of claims 1 to 8 welded to the substrate.
10. The radio frequency module according to claim 9 is characterized in that the power amplifier unit is a semiconductor chip; and the substrate input unit and the substrate output unit are both made of multiple discrete components.