WO2024117710A1 - Dielectric composition having high-temperature stability and multilayer ceramic capacitor comprising same - Google Patents
Dielectric composition having high-temperature stability and multilayer ceramic capacitor comprising same Download PDFInfo
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- WO2024117710A1 WO2024117710A1 PCT/KR2023/019232 KR2023019232W WO2024117710A1 WO 2024117710 A1 WO2024117710 A1 WO 2024117710A1 KR 2023019232 W KR2023019232 W KR 2023019232W WO 2024117710 A1 WO2024117710 A1 WO 2024117710A1
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- 239000000203 mixture Substances 0.000 title claims abstract description 53
- 239000003985 ceramic capacitor Substances 0.000 title claims description 22
- 239000000463 material Substances 0.000 claims abstract description 42
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims abstract description 21
- 229910052788 barium Inorganic materials 0.000 claims abstract description 15
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 13
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 13
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 7
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 6
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000002075 main ingredient Substances 0.000 claims description 28
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 12
- 239000004615 ingredient Substances 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
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- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 abstract description 2
- 229910010252 TiO3 Inorganic materials 0.000 abstract 2
- 239000003989 dielectric material Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 15
- 239000000654 additive Substances 0.000 description 8
- 230000000996 additive effect Effects 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
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- 230000000694 effects Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
Definitions
- the present invention relates to a dielectric composition having high temperature stability and a multilayer ceramic capacitor including the same.
- the multilayer ceramic capacitor has X8R characteristics.
- Multilayer ceramic chip capacitors have high capacity and reliability, but are relatively small in size and are widely used in fields that require precision and stability, such as automobiles and motors.
- the present invention provides a dielectric composition and a multilayer ceramic capacitor including the same.
- the dielectric composition according to embodiments of the present invention includes a barium titanate-based base material main component and sub-components, wherein the base material main component includes a first main component expressed as (Ba 1-x Ca x )TiO 3 and (Ba 1-y Ca y ) It includes a second main component expressed as TiO 3 , wherein the sub-component includes a first sub-component containing at least one of oxide and carbonate of a valence fixed acceptor element including Mg, oxide of Si element, carbonate and glass.
- the dielectric composition according to embodiments of the present invention can be used to form a dielectric layer of a multilayer ceramic capacitor having a structure in which dielectric layers and internal electrode layers are alternately stacked.
- the multilayer ceramic capacitor containing the dielectric composition of the present invention satisfies the X8R characteristics of the EIA standard.
- Figure 1 shows a multilayer ceramic capacitor according to an embodiment of the present invention.
- Figure 2 shows a multilayer ceramic capacitor according to an embodiment of the present invention.
- the present invention relates to a dielectric composition, and electronic components containing the dielectric composition include capacitors, inductors, piezoelectric elements, varistors, or thermistors.
- capacitors inductors, piezoelectric elements, varistors, or thermistors.
- thermistors thermoelectric elements
- a multilayer ceramic capacitor will be described as an example of the dielectric composition and electronic components.
- a multilayer ceramic capacitor according to an embodiment of the present invention includes a dielectric 100, a first external electrode 220, and a second external electrode 240.
- the dielectric 100 is composed of a rectangular parallelepiped having an upper surface, a lower surface, a first side, a second side opposite the first side, a third side, and a fourth side opposite the third side, and the first side is on the left side in the drawing.
- the second side is the right side in the drawing
- the third side is the front in the drawing
- the fourth side is the rear in the drawing.
- the dielectric 100 may include a plurality of dielectric sheets.
- a plurality of dielectric sheets may be stacked.
- Each dielectric sheet includes a dielectric composition and may be formed by sintering the dielectric composition.
- the first external electrode 220 is an electrode disposed on the first side of the dielectric 100.
- the first external electrode 220 and the second external electrode 240 may be formed to extend from the first side of the dielectric 100 to the top, bottom, third, and fourth sides of the dielectric 100.
- the second external electrode 240 is an electrode disposed on the second side of the dielectric 100.
- the second external electrode 240 may be formed to extend from the second side of the dielectric 100 to the top, bottom, third, and fourth sides of the dielectric 100.
- the first external electrode 220 and the second external electrode 240 may be formed to face each other at a predetermined distance from the top, bottom, third, and fourth sides of the dielectric 100.
- the multilayer ceramic capacitor according to an embodiment of the present invention may further include a plurality of electrode units 300.
- the plurality of electrode units 300 are stacked to form a stack, and this stack is disposed inside the dielectric 100.
- the plurality of electrode units 300 are stacked vertically in the drawing and disposed inside the dielectric 100.
- Each electrode unit 300 includes a first electrode set 320 and a second electrode set 340, and the first electrode set 320 and the second electrode set 340 are alternately stacked.
- the first electrode set 320 is composed of a plate-shaped conductor formed in a rectangular shape.
- the first electrode set 320 is disposed inside the dielectric 100 to be biased toward the first side of the dielectric 100 .
- the first end of the first electrode set 320 is connected to the first external electrode 220 on the first side of the dielectric 100.
- the second electrode set 340 is composed of a plate-shaped conductor formed in a rectangular shape.
- the second electrode set 340 is disposed inside the dielectric 100 to be biased toward the second side of the dielectric 100 .
- the first end of the second electrode set 340 is connected to the second external electrode 240 on the second side of the dielectric 100.
- the first electrode set 320 and the second electrode set 340 are distributed and disposed on two adjacent dielectric sheets among the dielectric sheets included in the dielectric 100.
- the first electrode set 320 and the second electrode set 340 may partially overlap with the dielectric sheet 110 therebetween.
- the dielectric composition may form the dielectric 100 described above. However, in order to avoid redundant explanation, content that overlaps with the above-described content will be omitted.
- the dielectric composition according to embodiments of the present invention may include a base material containing a rare earth element.
- the main component of the base material may be a barium titanate-based compound containing Ba and Ti, and optionally, it may be a compound to which Ca is additionally added.
- the dielectric composition according to embodiments of the present invention additionally includes a subcomponent, and the subcomponent may include first to sixth subcomponents.
- Dielectric compositions according to embodiments of the present invention may include base material main components including Ba and Ti.
- the base material main component is a first main component expressed as (Ba 1-x Ca x )TiO 3 (x ⁇ 0.01) and (Ba 1-y Ca y )TiO 3 (0.05) It includes the second principal component expressed as ⁇ y ⁇ 0.15).
- x and y are 0 or more, and when each of x and y is 0, the first/second main component becomes BaTiO3.
- the first main component and the second main component may be included in the dielectric composition as powder.
- the first main component may be included in the dielectric composition as a first powder
- the second main ingredient may be included as a second powder.
- the mixing ratio of the first main component and the second main component may be z. That is, the molar ratio of the first main component and the second main component may be 1-z:z. At this time, z may be 0.2 to 0.6.
- the mixture of the first main ingredient powder and the second main ingredient powder can be expressed as 1-z(Ba 1-x Ca x )TiO 3 + z(Ba 1-y Ca y )TiO 3 .
- z the mixing ratio of the first main component and the second main component, may satisfy the range of 0.2 ⁇ z ⁇ 0.6.
- crystal grains containing Ca are present in the sintered structure of dielectric compositions according to embodiments of the present invention, and the sizes and Ca contents of these crystal grains are mixed in various ways. Accordingly, the dielectric composition exhibits a relatively low change in capacitance even at high temperatures (eg, 150 degrees Celsius) and has the effect of having a low loss coefficient.
- the main component of the base material may be included in powder form and included in the dielectric composition.
- the average particle diameter of the base material powder is not particularly limited, but may be 1000 nm or less.
- the average particle diameter of the base material powder may be 200 nm to 350 nm, and more preferably 250 nm.
- the dielectric composition according to embodiments of the present invention may include one or more of an oxide and a carbonate of a fixed-valence acceptor element containing Mg as a first subcomponent.
- the first subcomponent may be included in an amount of 2.0 mole parts or less based on 100 mole parts of the base material main ingredient.
- the content of the first subcomponent may be based on the content of the Mg element included in the first subcomponent, regardless of the type of addition such as oxide or carbonate.
- the content of the Mg element included in the first subcomponent may be 2.0 mole parts or less based on 100 mole parts of the main component of the base material.
- the content of the first subcomponent exceeds 2.0 mole parts with respect to 100 mole parts of the dielectric base material main component, it is undesirable because the dielectric constant may be lowered and the high-temperature withstand voltage characteristics may be lowered.
- the dielectric composition according to embodiments of the present invention may include, as a second subcomponent, at least one selected from the group consisting of oxide of Si element, carbonate of Si element, and glass containing Si element.
- the second subcomponent may be included in an amount of 1.5 to 4.0 mole parts based on 100 mole parts of the base material main component.
- the content of the second subcomponent may be based on the content of the Si element included in the second subcomponent, regardless of the type of addition such as glass, oxide, or carbonate.
- the dielectric constant and high-temperature withstand voltage may be reduced, and if it is contained in excess of 4.5 mole parts, problems such as reduced sinterability and density, and secondary phase formation may occur. It may be undesirable.
- the dielectric composition according to embodiments of the present invention may include, as a third subcomponent, one or more of oxides containing V and carbonates thereof.
- the third subcomponent may be included in an amount of 0.1 to 2 mole parts based on 100 mole parts of the base material main ingredient.
- the content of the third subcomponent can be based on the content of the V element included in the third subcomponent, regardless of the type of addition such as oxide or carbonate.
- the content of element V included in the third subcomponent may be 0.1 to 2 mole parts or less based on 100 mole parts of the main component of the base material.
- the third subcomponent plays a role in stabilizing the change in capacity at high temperatures. If the content of the third subcomponent is less than 0.1 mole compared to the base material main component, the RC value may be lowered, and if it exceeds 2 mole parts per 100 mole parts of the dielectric base material main component, the high temperature The withstand voltage may be lowered.
- the dielectric composition according to embodiments of the present invention contains, as a fourth subcomponent, at least one element selected from the group consisting of Mn, Cr, Fe, Ni, Co, Cu, and Zn, their oxides, and their carbonates. can do.
- the fourth subcomponent may be included in an amount of 0.1 to 2 mole parts based on 100 mole parts of the base material main ingredient.
- the content of the fourth subcomponent may be based on the content of at least one element among Mn, Cr, Fe, Ni, Co, Cu, and Zn included in the fourth subcomponent, regardless of the type of addition such as oxide or carbonate.
- the total content of at least one valence variable acceptor element among Mn, Cr, Fe, Ni, Co, Cu, and Zn contained in the fourth subcomponent may be 0.1 to 2 mole parts based on 100 mole parts of the base material main component. there is.
- the fourth subcomponent serves to increase the IR value, and if the content of the fourth subcomponent is less than 0.1 mole part, the IR characteristics may deteriorate and reliability may decrease. Additionally, if the content of the fourth subcomponent exceeds 2 molar parts, the high temperature accelerated life may be reduced.
- the dielectric composition according to embodiments of the present invention may include, as a fifth subcomponent, at least one selected from the group consisting of oxides and carbonates of one or more of the elements Ba and Ca.
- the fifth subcomponent may be included in an amount of 2 to 4.5 mole parts based on 100 mole parts of the base material main ingredient.
- the content of the fifth subcomponent may be based on the sum of the contents of one or more of the Ba and Ca elements included in the fifth subcomponent, regardless of the type of addition such as oxide or carbonate.
- the sum of the contents of one or more of the Ba and Ca elements included in the fifth subcomponent may be 2 to 4.5 mole parts based on 100 mole parts of the base material main component.
- the fifth subcomponent is included in an amount of 2 to 4.5 mole parts based on 100 mole parts of the main component of the base material, high-temperature withstand voltage characteristics are improved and the capacitance change at high temperature can be stabilized.
- the dielectric composition according to embodiments of the present invention may include, as a sixth subcomponent, at least one selected from the group consisting of oxides and carbonates of at least one of Yb and Y elements.
- the sixth subcomponent includes one or more selected from the group consisting of oxides and carbonates of one or more of Dy, Ho, Sm, Gd, Er, La, Ce and Nd, which are other rare earth elements in place of Yb and Y elements. You may.
- the sixth subcomponent may be included in an amount of 2 to 4 mole parts based on 100 mole parts of the base material main ingredient.
- the content of the sixth subcomponent can be based on the content of the element included in the sixth subcomponent without distinguishing the form of addition such as oxide or carbonate.
- the total content of elements included in the sixth subcomponent may be 2 to 4 molar parts based on 100 molar parts of the base material main component.
- the sixth subcomponent serves to prevent a decrease in reliability of the multilayer ceramic capacitor formed with the dielectric composition according to embodiments of the present invention.
- the effect of improving the TCC (temperature coefficient of capacitance) of the high temperature part may not be significant, and if the content of the sixth subcomponent exceeds 4 mole parts with respect to 100 mole parts of the main component of the base material. Doing so may deteriorate the high-temperature withstand voltage characteristics.
- Starting materials are BaCO 3 , TiO 2 and It is CaCO 3 . These starting raw material powders were mixed in a ball mill and calcined in the range of 900 to 1000°C to produce (Ba 1-x Ca x )TiO 3 first main ingredient powder and (Ba 1-y Ca y )TiO 3 second main ingredient powder with a particle size of 250 nm. prepared.
- the raw material powder containing the main ingredient and secondary ingredient is mixed with ethanol/toluene, dispersant, and binder using a zirconia ball as a mixing/dispersing media.
- ball milling was performed for a predetermined period of time (e.g., 20 hours).
- the prepared slurry was used to manufacture a molded sheet with a thickness of 10 ⁇ m using a doctor blade type coater. Internal electrodes were printed on the molded sheet.
- the upper and lower covers were manufactured by stacking 25 layers of cover sheets, and 21 layers of printed active sheets were stacked while pressing to create a pressed bar.
- the pressed bar was cut into chips of size 3225 (length x width x thickness 3.2 mm x 2.5 mm x 2.5 mm) using a cutter.
- the manufactured chip After calcining the manufactured chip, it is fired in a reducing atmosphere (0.1% H 2 /99.9% N 2 , H 2 O/H 2 /N 2 atmosphere) at a temperature of 1250 to 1350°C for more than 1 hour, and then at 1000°C. Heat treatment was performed by re-oxidation in a nitrogen (N2) atmosphere for more than 2 hours.
- a reducing atmosphere (0.1% H 2 /99.9% N 2 , H 2 O/H 2 /N 2 atmosphere
- External electrodes were completed on the fired chip through a termination process and electrode firing using conductive paste.
- Capacitance dielectric constant
- TCC change in capacitance with temperature
- high-temperature withstand voltage were measured and evaluated for the multilayer ceramic capacitor specimen completed as described above.
- room temperature insulation resistance, high temperature acceleration life, and loss coefficient were evaluated, but are not described.
- the dielectric constant of the multilayer ceramic capacitor (MLCC) chip was calculated from the capacitance, dielectric thickness, internal electrode area, and number of layers of the multilayer ceramic capacitor (MLCC) chip.
- the change in capacitance according to temperature was measured in the temperature range from -55°C to 150°C. In the corresponding temperature range, the change in capacity was measured at 1kHz and 1Vrms using an LCR-meter. At this time, the rate of change (%) of capacitance at each temperature compared to the capacitance at 25°C is measured. In this specification, the change in capacitance at 150°C is described.
- High-temperature withstand voltage was measured by applying a voltage step of DC 5 V/ ⁇ m for 10 minutes at 150°C and continuously increasing this voltage step, and the voltage at which IR withstood more than 100G ⁇ was measured. If the high-temperature withstand voltage was more than 50 V/ ⁇ m, it was judged as good, and if it was less than 40 V/ ⁇ m, it was judged as bad.
- the RC value was judged as good if it was over 1000, and bad if it was less than 1000.
- Sample Main ingredient 1 Main ingredient 2 mix molar ratio Number of moles of minor ingredients per 100 moles of main ingredient additive ratio (Ba 1-x Ca x )TiO 3 (Ba 1-y Ca y )TiO 3 One 2 3 4 5 6 (Ba+Ca+Yb+Y)/Si x y z MgCO 3 SiO 2 V 2 O 5 MnO 2 CaCO 3 BaCO 3 Y 2 O 3 Yb 2 O 3
- Samples 1 to 12 in Table 1 have a content of 1.45 moles of the first subcomponent Mg, 2.69 moles of the second subcomponent Si, 0.12 moles of the third subcomponent V, 0.35 moles of the fourth subcomponent Mn, and 0.35 moles of the fifth subcomponent.
- the sum of the contents of (Ca, Ba) fixed at 3.65 mol and the sum of the contents of the sixth subcomponents (Y, Yb) fixed at 2.78 the Ca content of the first main component, the Ca content of the second main component, and the first main component and It represents samples in which the mixing molar ratio of the second main component was changed, and Samples 1 to 12 in Table 2 show the characteristics of the samples corresponding to Samples 1 to 12 in Table 1.
- the Ca content x of the first main component is 0.01
- the Ca content x of the first main component is 0.02.
- the TCC of the high temperature part exceeds 15%, making it vulnerable to temperature changes.
- the RC value becomes less than 1000, which reduces reliability.
- the RC value is less than 1000, resulting in lower reliability.
- the TCC of the high temperature part deviates from 15%.
- the Ca content x of the first main component is 0.01 or less
- the Ca content y of the second main component is 0.05 to 0.15
- the mixing molar ratio z is 0.2 to 0.6 (samples 4, 5, 7 and 8)
- the high-temperature TCC satisfies the X8R standard within ⁇ 15%, and good RC characteristics of over 1000 can be achieved. Therefore, it can be said that the content x of the first main component is 0.01 or less, the content y of the second main ingredient is 0.05 to 0.15, and the mixing molar ratio z is 0.2 to 0.6.
- Sample Main ingredient 1 Main ingredient 2 mix molar ratio Number of moles of minor ingredients per 100 moles of main ingredient additive ratio (Ba 1-x Ca x )TiO 3 (Ba 1-y Ca y )TiO 3 One 2 3 4 5 6 (Ba+Ca+Yb+Y)/Si x y z MgCO 3 SiO 2 V 2 O 5 MnO 2 CaCO 3 BaCO 3 Y 2 O 3 Yb 2 O 3 13 0.005 0.1 0.4 1.45 2.69 0.06 0.35 - 1.0 0.3 1.09 1.41 14 0.005 0.1 0.4 1.45 2.69 0.06 0.35 - 2 0.3 1.09 1.67 15 0.005 0.1 0.4 1.45 2.69 0.06 0.35 - 4.5 0.3 1.09 3.16 16 0.005 0.1 0.4 1.45 2.69 0.06 0.35 - 5 0.3 1.09 3.72 17 0.005 0.1 0.4 1.45 2.69 0.06 0.35 1.0 - 0.3 1.09 1.41 18 0.005 0.1 0.4 1.45 2.
- Samples 13 to 20 in Table 3 have a Ca content x of the first main component of 0.05, a Ca content y of the second main component of 0.1, a content of the first subcomponent Mg of 1.45 mol, and a content of the second subcomponent Si of 2.69 mol. Mol, with the content of the third subcomponent V being 0.12 mole, the content of the fourth subcomponent Mn being 0.35 mole, and the sum of the contents of the sixth subcomponent (Y, Yb) being fixed at 2.78, the content of the fifth subcomponent (Ca, Ba) indicates samples that have changed, and samples 13 to 20 in Table 4 show the characteristics of the samples corresponding to samples 13 to 20 in Table 3.
- the dielectric constant increases to over 3,000 and the high temperature TCC (150°C) deviates from ⁇ 15%, making it vulnerable to temperature changes.
- the content of the fifth subcomponent Ba exceeds 4.5 mol (sample 16)
- the high temperature TCC (150°C) deviates from ⁇ 15% and both the RC value and high temperature withstand voltage values are defective.
- the appropriate range of the sum of the contents of the fifth subcomponent (Ba, Ca) is 2 to 4.5 mole for 100 mole parts of the main component of the base material.
- Sample Main ingredient 1 Main ingredient 2 mix molar ratio Number of moles of minor ingredients per 100 moles of main ingredient additive ratio (Ba 1-x Ca x )TiO 3 (Ba 1-y Ca y )TiO 3 One 2 3 4 5 6 (Ba+Ca+Yb+Y)/Si x y z MgCO 3 SiO 2 V 2 O 5 MnO 2 CaCO 3 BaCO 3 Y 2 O 3 Yb 2 O 3 21 0.005 0.1 0.4 1.45 2.69 0.06 0.35 2.00 1.65 - 0.5 1.73 22 0.005 0.1 0.4 1.45 2.69 0.06 0.35 2.00 1.65 - One 2.10 23 0.005 0.1 0.4 1.45 2.69 0.06 0.35 2.00 1.65 - 2 2.84 24 0.005 0.1 0.4 1.45 2.69 0.06 0.35 2.00 1.65 - 2.5 3.22 25 0.005 0.1 0.4 1.45 2.69 0.06 0.35 2.00 1.65 One - 2.10 26 0.005 0.1 0.4 1.45 2.69 0.
- Samples 21 to 27 in Table 5 have a Ca content x of the first main component of 0.05, a Ca content y of the second main component of 0.1, a content of the first subcomponent Mg of 1.45 mol, and a content of the second subcomponent Si of 2.69 mol. Mol, with the content of the third subcomponent V fixed at 0.12 mole, the content of the fourth subcomponent Mn at 0.35 mole, and the sum of the contents of the fifth subcomponent (Ca, Ba) fixed at 3.65 mole, the content of the sixth subcomponent (Y, Yb) The changed samples are shown, and samples 21 to 27 in Table 6 show the characteristics of the samples corresponding to samples 21 to 27 in Table 5.
- the high temperature TCC (150°C) deviates from ⁇ 15%, making it vulnerable to temperature changes.
- the content of the sixth subcomponent Yb exceeds 4 mol (sample 24)
- the high temperature TCC (150°C) does not exceed ⁇ 15%, but there is a problem of poor high temperature withstand voltage characteristics.
- the high temperature TCC satisfies the X8R standard within ⁇ 15%, and good high temperature withstand voltage characteristics of 50V/ ⁇ m or more are possible.
- samples 24 to 27 are obtained by replacing the sixth subcomponent Yb with Y in samples 21 to 23, and it can be confirmed that the dielectric constant, RC value, high temperature TCC and high temperature withstand voltage characteristics are substantially the same.
- the appropriate content range of the sixth subcomponent (Y, Yb) can be said to be more than 0 and less than 4 mole parts in element ratio for 100 mole parts of the main component of the base material.
- Sample Main ingredient 1 Main ingredient 2 mix molar ratio Number of moles of minor ingredients per 100 moles of main ingredient additive ratio (Ba 1-x Ca x )TiO 3 (Ba 1-y Ca y )TiO 3 One 2 3 4 5 6 (Ba+Ca+Yb+Y)/Si x y z MgCO 3 SiO 2 V 2 O 5 MnO 2 CaCO 3 BaCO 3 Y 2 O 3 Yb 2 O 3 28 0.005 0.1 0.4 1.45 1.5 0.06 0.35 2.00 2.00 0.75 1.20 5.27 29 0.005 0.1 0.4 1.45 1.7 0.06 0.35 2.00 1.65 0.75 1.20 4.64 30 0.005 0.1 0.4 1.45 4 0.06 0.35 1.00 1.00 0.4 0.6 1.00 31 0.005 0.1 0.4 1.45 3.8 0.06 0.35 1.00 1.00 0.4 0.6 1.06 32 0.005 0.1 0.4 1.45 One 0.06 0.35 1.00 1.00 0.5 1.3 5.6 33 0.005 0.1 0.4 1.45 One 0.
- Samples 28 to 35 in Table 7 have a Ca content Mol, with the content of the fourth subcomponent Mn fixed at 0.35 mol, the additive ratio (Ba+Ca+Yb) is changed by changing the contents of the second subcomponent Si, the fifth subcomponent (Ca, Ba), and the sixth subcomponent (Y, Yb). It represents samples in which the ratio of +Y)/Si was varied, and samples 28 to 35 in Table 8 show the characteristics of the samples corresponding to samples 28 to 35 in Table 5.
- the additive ratio (Ba+Ca+Yb+Y)/Si is less than 1.05 or (Samples 30, 34) or exceeding 4.64 (Samples 28, 32), the high-temperature TCC deviates from ⁇ 15%, making it vulnerable to temperature changes or having poor high-temperature withstand voltage characteristics.
- the appropriate range of the additive ratio (Ba+Ca+Yb+Y)/Si can be said to be 1.05 to 4.64. This fact can also be confirmed through the samples 1 to 27 described above.
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Abstract
Disclosed is a dielectric composition comprising a barium titanate-based base material main component and minor components. The base material main component of the dielectric composition comprises a first main component represented by (Ba1-xCax)TiO3 and a second main component represented by (Ba1-yCay)TiO3, and the dielectric composition includes any one of oxides and carbonates of at least one of the elements Yb and Y among oxides and carbonates of the elements Mg, Si, V, Mn, Ba, Ca, Y, and Yb. A dielectric material formed by sintering the dielectric composition satisfies the X8R characteristics specified in the EIA standard.
Description
본 발명은 고온 안정성을 갖는 유전체 조성물 및 이를 포함하는 적층 세라믹 커패시터(CERAMIC COMPOSITION HAVING HIGH TEMPERATURE STABILITY AND CERAMIC CAPACITOR INCLUDING THE SAME)에 관한 것으로, 특히, 적층 세라믹 커패시터는 X8R 특성을 갖는다.The present invention relates to a dielectric composition having high temperature stability and a multilayer ceramic capacitor including the same. In particular, the multilayer ceramic capacitor has X8R characteristics.
다층 세라믹 칩 캐패시터는 높은 용량과 높은 신뢰성을 가지되, 그 크기가 상대적으로 작아 자동차, 모터 등 정밀도 및 안정성이 요구되는 분야에서 널리 사용되고 있다. Multilayer ceramic chip capacitors have high capacity and reliability, but are relatively small in size and are widely used in fields that require precision and stability, such as automobiles and motors.
적층 세라믹 커패시터에 대해 용량, 온도 안정성, 전압 안정성 등 여러가지 요인에 대한 요구가 있다. 특히, 자동차에 사용되는 전장용 적층 세라믹 커패시터의 경우 높은 온도 하에서 동작하기 때문에, 높은 온도에서도 그 용량(커패시턴스)이 변화하지 않아야 한다. 이와 관련하여, 전자 산업 협회(EIA)는 적층 세라믹 커패시터에 대해, 섭씨 -55도 내지 150도의 온도에서의 커패시턴스의 변화가, 25도에서의 기준 커패시턴스에 대하여 15% 내외일 때, 이를 X8R 특성을 만족한다고 규정하고 있다.There are requirements for various factors such as capacity, temperature stability, and voltage stability for multilayer ceramic capacitors. In particular, since multilayer ceramic capacitors for automotive applications operate under high temperatures, their capacity (capacitance) must not change even at high temperatures. In this regard, the Electronic Industries Association (EIA) designates multilayer ceramic capacitors as It is stipulated that it is satisfactory.
본 발명은 유전체 조성물 및 이를 포함하는 적층 세라믹 커패시터를 제공하는 것에 있다.The present invention provides a dielectric composition and a multilayer ceramic capacitor including the same.
본 발명의 실시 예들에 따른 유전체 조성물은 티탄산바륨계 모재 주성분 및 부성분을 포함하며, 상기 모재 주성분은 (Ba1-xCax)TiO3로 표현되는 제1주성분 및 (Ba1-yCay)TiO3로 표현되는 제2주성분을 포함하며, 상기 부성분은, Mg를 포함하는 원자가 고정 억셉터 원소의, 산화물 및 탄산염 중 하나 이상을 포함하는 제1부성분, Si 원소의 산화물, 탄산염 및 글라스로 이루어진 군에서 선택되는 하나 이상을 포함하는 제2부성분, V 원소의 산화물 및 탄산염 중 하나 이상을 포함하는 제3부성분, Mn, Cr, Fe, Ni, Co, Cu, 및 Zn 중 하나 이상을 포함하는 원자가 가변 억셉터 원소의, 산화물 및 탄산염으로 이루어진 군에서 선택되는 하나 이상을 포함하는 제4부성분, Ba 및 Ca 중 하나 이상의 원소의 산화물 및 탄산염으로 이루어진 군에서 선택되는 하나 이상을 포함하는 제5부성분 및 Yb 및 Y 중 하나 이상의 원소의 산화물 및 탄산염으로 이루어진 군에서 선택되는 하나 이상을 포함하는 제6부성분; 중 적어도 하나의 부성분을 포함하고, 상기 적어도 하나의 부성분은 상기 제6부성분을 더 포함한다.The dielectric composition according to embodiments of the present invention includes a barium titanate-based base material main component and sub-components, wherein the base material main component includes a first main component expressed as (Ba 1-x Ca x )TiO 3 and (Ba 1-y Ca y ) It includes a second main component expressed as TiO 3 , wherein the sub-component includes a first sub-component containing at least one of oxide and carbonate of a valence fixed acceptor element including Mg, oxide of Si element, carbonate and glass. A second subcomponent containing at least one selected from the group, a third subcomponent containing at least one of oxides and carbonates of element V, and an valence containing at least one of Mn, Cr, Fe, Ni, Co, Cu, and Zn. A fourth subcomponent containing at least one selected from the group consisting of oxides and carbonates of variable acceptor elements, a fifth subcomponent containing at least one selected from the group consisting of oxides and carbonates of at least one element of Ba and Ca, and A sixth subcomponent containing at least one selected from the group consisting of oxides and carbonates of at least one element of Yb and Y; and at least one subcomponent, and the at least one subcomponent further includes the sixth subcomponent.
본 발명의 실시 예들에 따른 유전체 조성물은, 유전체층과 내부 전극층이 교대로 적층된 구조를 갖는 적층 세라믹 커패시터의 유전체층의 형성에 사용될 수 있다.The dielectric composition according to embodiments of the present invention can be used to form a dielectric layer of a multilayer ceramic capacitor having a structure in which dielectric layers and internal electrode layers are alternately stacked.
본 발명의 유전체 조성물을 포함하는 적층 세라믹 커패시터는 EIA 규격의 X8R 특성을 만족한다.The multilayer ceramic capacitor containing the dielectric composition of the present invention satisfies the X8R characteristics of the EIA standard.
도 1은 본 발명의 실시 예에 따른 적층 세라믹 커패시터를 나타낸다.Figure 1 shows a multilayer ceramic capacitor according to an embodiment of the present invention.
도 2는 본 발명의 실시 예에 따른 적층 세라믹 커패시터를 나타낸다.Figure 2 shows a multilayer ceramic capacitor according to an embodiment of the present invention.
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시 예를 첨부 도면을 참조하여 설명하기로 한다. 우선 각 도면의 구성요소들에 참조부호를 부가함에 있어서, 동일한 구성요소들에 대해서는 비록 다른 도면상에 표시되더라도 가능한 한 동일한 부호를 가지도록 하고 있음에 유의해야 한다. 또한, 본 발명을 설명함에 있어, 관련된 공지 구성 또는 기능에 대한 구체적인 설명이 본 발명의 요지를 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명은 생략한다.Hereinafter, in order to explain in detail enough to enable those skilled in the art of the present invention to easily implement the technical idea of the present invention, the most preferred embodiments of the present invention will be described with reference to the accompanying drawings. . First, when adding reference numerals to components in each drawing, it should be noted that identical components are given the same reference numerals as much as possible even if they are shown in different drawings. Additionally, in describing the present invention, if it is determined that a detailed description of a related known configuration or function may obscure the gist of the present invention, the detailed description will be omitted.
본 발명은 유전체 조성물에 관한 것으로, 유전체 조성물을 포함하는 전자부품은 커패시터, 인덕터, 압전체 소자, 바리스터, 또는 서미스터 등이 있으며, 이하에서는 유전체 조성물 및 전자부품의 일례로서 적층 세라믹 커패시터에 관하여 설명한다.The present invention relates to a dielectric composition, and electronic components containing the dielectric composition include capacitors, inductors, piezoelectric elements, varistors, or thermistors. Hereinafter, a multilayer ceramic capacitor will be described as an example of the dielectric composition and electronic components.
적층 세라믹 커패시터Multilayer Ceramic Capacitors
도 1 및 도 2는 본 발명의 실시 예에 따른 적층 세라믹 커패시터를 나타낸다. 도 1을 참조하면, 본 발명의 실시 예에 따른 적층 세라믹 커패시터는 유전체(100), 제1 외부 전극(220) 및 제2 외부 전극(240)을 포함하여 구성된다.1 and 2 show a multilayer ceramic capacitor according to an embodiment of the present invention. Referring to FIG. 1, a multilayer ceramic capacitor according to an embodiment of the present invention includes a dielectric 100, a first external electrode 220, and a second external electrode 240.
유전체(100)는 상면, 하면, 제1 측면, 제1 측면에 대향되는 제2 측면, 제3 측면, 제3 측면에 대향되는 제4 측면을 갖는 직육면체로 구성되며, 제1 측면은 도면상 좌측이고, 제2 측면은 도면상 우측이고, 제3측면은 도면상 전면이고, 제4 측면은 도면상 후면인 것을 일례로 한다. The dielectric 100 is composed of a rectangular parallelepiped having an upper surface, a lower surface, a first side, a second side opposite the first side, a third side, and a fourth side opposite the third side, and the first side is on the left side in the drawing. As an example, the second side is the right side in the drawing, the third side is the front in the drawing, and the fourth side is the rear in the drawing.
유전체(100)는 복수의 유전체 시트를 포함할 수 있다. 복수의 유전체 시트는 적층될 수 있다. 각각의 유전체 시트는 유전체 조성물을 포함하고, 유전체 조성물을 소결함으로써 형성된 것일 수 있다. The dielectric 100 may include a plurality of dielectric sheets. A plurality of dielectric sheets may be stacked. Each dielectric sheet includes a dielectric composition and may be formed by sintering the dielectric composition.
제1 외부 전극(220)은 유전체(100)의 제1 측면에 배치되는 전극이다. 제1 외부 전극(220) 및 제2 외부 전극(240)은 유전체(100)의 제1 측면에서 유전체(100)의 상면, 하면, 제3측면 및 제4 측면으로 연장되어 형성될 수 있다. 제2 외부 전극(240)은 유전체(100)의 제2 측면에 배치되는 전극이다. 제2 외부 전극(240) 및 제2 외부 전극(240)은 유전체(100)의 제2 측면에서 유전체(100)의 상면, 하면, 제3측면 및 제4 측면으로 연장되어 형성될 수 있다. 이 때, 제1 외부 전극(220) 및 제2 외부 전극(240)은 유전체(100)의 상면, 하면, 제3측면 및 제4 측면에서 소정 간격 이격되어 서로 마주보도록 형성될 수 있다.The first external electrode 220 is an electrode disposed on the first side of the dielectric 100. The first external electrode 220 and the second external electrode 240 may be formed to extend from the first side of the dielectric 100 to the top, bottom, third, and fourth sides of the dielectric 100. The second external electrode 240 is an electrode disposed on the second side of the dielectric 100. The second external electrode 240 may be formed to extend from the second side of the dielectric 100 to the top, bottom, third, and fourth sides of the dielectric 100. At this time, the first external electrode 220 and the second external electrode 240 may be formed to face each other at a predetermined distance from the top, bottom, third, and fourth sides of the dielectric 100.
도 2를 참조하면, 본 발명의 실시 예에 따른 적층 세라믹 커패시터는 복수의 전극 유닛(300)을 더 포함할 수 있다. 이 때, 복수의 전극 유닛(300)은 적층되어 적층체를 형성하고, 이 적층체는 유전체(100)의 내부에 배치된다.Referring to FIG. 2, the multilayer ceramic capacitor according to an embodiment of the present invention may further include a plurality of electrode units 300. At this time, the plurality of electrode units 300 are stacked to form a stack, and this stack is disposed inside the dielectric 100.
복수의 전극 유닛(300)은 도면상에서 수직 방향으로 적층되어 유전체(100)의 내부에 배치된다. 각각의 전극 유닛(300)은 제1 전극 세트(320) 및 제2 전극 세트(340)를 포함하며, 제1 전극 세트(320) 및 제2 전극 세트(340)가 교대로 적층되어 구성된다.The plurality of electrode units 300 are stacked vertically in the drawing and disposed inside the dielectric 100. Each electrode unit 300 includes a first electrode set 320 and a second electrode set 340, and the first electrode set 320 and the second electrode set 340 are alternately stacked.
제1 전극 세트(320)는 직사각형 형상으로 형성된 판상의 도전체로 구성된다. 제1 전극 세트(320)는 유전체(100)의 내부에서 유전체(100)의 제1 측면으로 치우쳐져 배치된다. 제1 전극 세트(320)의 제1 단부는 유전체(100)의 제1 측면에서 제1 외부 전극(220)과 연결된다.The first electrode set 320 is composed of a plate-shaped conductor formed in a rectangular shape. The first electrode set 320 is disposed inside the dielectric 100 to be biased toward the first side of the dielectric 100 . The first end of the first electrode set 320 is connected to the first external electrode 220 on the first side of the dielectric 100.
제2 전극 세트(340)는 직사각형 형상으로 형성된 판상의 도전체로 구성된다. 제2 전극 세트(340)는 유전체(100)의 내부에서 유전체(100)의 제2 측면으로 치우쳐져 배치된다. 제2 전극 세트(340)의 제1 단부는 유전체(100)의 제2 측면에서 제2 외부 전극(240)과 연결된다.The second electrode set 340 is composed of a plate-shaped conductor formed in a rectangular shape. The second electrode set 340 is disposed inside the dielectric 100 to be biased toward the second side of the dielectric 100 . The first end of the second electrode set 340 is connected to the second external electrode 240 on the second side of the dielectric 100.
제1 전극 세트(320) 및 제2 전극 세트(340)는 유전체(100)에 포함된 유전체 시트들 중에서 인접한 두 개의 유전체 시트에 각각 분산 배치된다. 제1 전극 세트(320) 및 제2 전극 세트(340)는 유전체 시트(110)를 사이에 두고 일부 중첩될 수 있다.The first electrode set 320 and the second electrode set 340 are distributed and disposed on two adjacent dielectric sheets among the dielectric sheets included in the dielectric 100. The first electrode set 320 and the second electrode set 340 may partially overlap with the dielectric sheet 110 therebetween.
유전체 조성물 및 이의 제조방법Dielectric composition and method of manufacturing the same
이하, 본 발명의 실시 예들에 따른 유전체 조성물 및 이의 제조방법에 대하여 상세히 설명한다. 유전체 조성물은 상술한 유전체(100)를 형성할 수 있다. 다만, 중복되는 설명을 피하기 위하여, 상술한 내용과 중복되는 내용은 생략한다. Hereinafter, the dielectric composition and its manufacturing method according to embodiments of the present invention will be described in detail. The dielectric composition may form the dielectric 100 described above. However, in order to avoid redundant explanation, content that overlaps with the above-described content will be omitted.
본 발명의 실시 예들에 따른 유전체 조성물은 희토류 원소를 포함하는 모재 주성분을 포함할 수 있다. 모재 주성분은 Ba 및 Ti를 포함하는 티탄산 바륨계 화합물일 수 있고, 선택적으로, Ca가 추가적으로 첨가된 화합물일 수 있다. The dielectric composition according to embodiments of the present invention may include a base material containing a rare earth element. The main component of the base material may be a barium titanate-based compound containing Ba and Ti, and optionally, it may be a compound to which Ca is additionally added.
또한, 본 발명의 실시 예들에 따른 유전체 조성물은 부성분을 추가적으로 포함하고, 상기 부성분은 제1부성분 내지 제6성분을 포함할 수 있다. Additionally, the dielectric composition according to embodiments of the present invention additionally includes a subcomponent, and the subcomponent may include first to sixth subcomponents.
본 발명의 실시 예들에 따른 유전체 조성물은 EIA(Electronic Industries Association) 규격에서 명시한 X8R(-55℃~150℃) 특성을 만족하여, 신뢰성이 우수한 유전체 조성물 및 이를 포함하는 적층 세라믹 커패시터를 구현할 수 있다.The dielectric composition according to embodiments of the present invention satisfies the
모재 주성분Base material main ingredients
본 발명의 실시 예들에 따른 유전체 조성물은 Ba 및 Ti를 포함하는 모재 주성분을 포함할 수 있다. 실시 예들에 따라, 발명의 일 실시형태에 따르면, 모재 주성분은 (Ba1-xCax)TiO3 (x≤0.01)로 표현되는 제1주성분 및 (Ba1-yCay)TiO3 (0.05≤y≤0.15)로 표현되는 제2주성분을 포함한다. 여기서, x 및 y는 0 이상이며, 상기 x 및 y 각각이 0인 경우 제1/제2주성분은 BaTiO3가 된다.Dielectric compositions according to embodiments of the present invention may include base material main components including Ba and Ti. According to embodiments, according to one embodiment of the invention, the base material main component is a first main component expressed as (Ba 1-x Ca x )TiO 3 (x≤0.01) and (Ba 1-y Ca y )TiO 3 (0.05) It includes the second principal component expressed as ≤y≤0.15). Here, x and y are 0 or more, and when each of x and y is 0, the first/second main component becomes BaTiO3.
제1주성분과 제2주성분은 분말로서 유전체 조성물에 포함될 수 있다. 예를 들어, 제1주성분은 제1분말로, 제2주성분은 제2분말로 유전체 조성물에 포함될 수 있다. The first main component and the second main component may be included in the dielectric composition as powder. For example, the first main component may be included in the dielectric composition as a first powder, and the second main ingredient may be included as a second powder.
실시 예들에 따라, 제1주성분 및 제2주성분의 혼합비는 z일 수 있다. 즉, 제1주성분과 제2주성분의 몰비는 1-z:z일 수 있다. 이 때, z는 0.2 내지 0.6일 수 있다. 예를 들어, 제1주성분 분말과 제2주성분 분말의 혼합은 1-z(Ba1-xCax)TiO3 + z(Ba1-yCay)TiO3로 표현될 수 있다. Depending on embodiments, the mixing ratio of the first main component and the second main component may be z. That is, the molar ratio of the first main component and the second main component may be 1-z:z. At this time, z may be 0.2 to 0.6. For example, the mixture of the first main ingredient powder and the second main ingredient powder can be expressed as 1-z(Ba 1-x Ca x )TiO 3 + z(Ba 1-y Ca y )TiO 3 .
본 발명의 실시 예들에 따르면, 제1주성분 및 제2주성분의 혼합비인 z가 0.2≤z≤0.6의 범위를 만족할 수 있다. 이를 통해, 본 발명의 실시 예들에 다른 유전체 조성물의 소결 구조에 Ca를 포함한 결정립들이 존재하고, 이들 결정립의 크기 및 Ca 함량이 다양하게 혼합되어 있게 된다. 이에 따라, 유전체 조성물은 고온(예컨대, 섭씨 150도)에서도 비교적 낮은 커패시턴스 변화를 보이면서, 손실 계수가 낮은 효과가 있다. According to embodiments of the present invention, z, the mixing ratio of the first main component and the second main component, may satisfy the range of 0.2≤z≤0.6. Through this, crystal grains containing Ca are present in the sintered structure of dielectric compositions according to embodiments of the present invention, and the sizes and Ca contents of these crystal grains are mixed in various ways. Accordingly, the dielectric composition exhibits a relatively low change in capacitance even at high temperatures (eg, 150 degrees Celsius) and has the effect of having a low loss coefficient.
모재 주성분은 분말 형태로 포함되어 유전체 조성물에 포함될 수 있다. 상기 모재 주성분 분말의 평균 입경은 특별히 제한되는 것은 아니나 1000nm 이하일 수 있다. 바람직하게는, 모재 주성분 분말의 평균 입경은 200nm 내지 350nm일 수 있고, 더욱 바람직하게는, 250nm일 수 있다.The main component of the base material may be included in powder form and included in the dielectric composition. The average particle diameter of the base material powder is not particularly limited, but may be 1000 nm or less. Preferably, the average particle diameter of the base material powder may be 200 nm to 350 nm, and more preferably 250 nm.
제1부성분1st subingredient
본 발명의 실시 예들에 따른 유전체 조성물은 제1부성분으로서 Mg를 포함하는 원자가 고정 억셉터(fixed-valence acceptor) 원소의, 산화물 및 탄산염 중 하나 이상을 포함할 수 있다.The dielectric composition according to embodiments of the present invention may include one or more of an oxide and a carbonate of a fixed-valence acceptor element containing Mg as a first subcomponent.
제1부성분은 모재 주성분 100몰부에 대하여 2.0몰부 이하로 포함될 수 있다. 제1부성분의 함량은 산화물 또는 탄산염과 같은 첨가 형태를 구분하지 않고 제1부성분에 포함된 Mg 원소의 함량을 기준으로 할 수 있다. 예를 들어, 제1부성분에 포함된 Mg 원소의 함량은 모재 주성분 100 몰부에 대하여 2.0 몰부 이하일 수 있다.The first subcomponent may be included in an amount of 2.0 mole parts or less based on 100 mole parts of the base material main ingredient. The content of the first subcomponent may be based on the content of the Mg element included in the first subcomponent, regardless of the type of addition such as oxide or carbonate. For example, the content of the Mg element included in the first subcomponent may be 2.0 mole parts or less based on 100 mole parts of the main component of the base material.
제1부성분의 함량이 유전체 모재 주성분 100몰부에 대하여 2.0몰부를 초과하는 경우 유전율이 낮아지고 고온 내전압 특성이 낮아지는 문제가 있을 수 있어 바람직하지 못하다.If the content of the first subcomponent exceeds 2.0 mole parts with respect to 100 mole parts of the dielectric base material main component, it is undesirable because the dielectric constant may be lowered and the high-temperature withstand voltage characteristics may be lowered.
제2부성분Secondary ingredient
본 발명의 실시 예들에 따른 유전체 조성물은 제2부성분으로서 Si 원소의 산화물, Si 원소의 탄산염 및 Si 원소를 포함하는 글라스로 이루어진 군에서 선택되는 하나 이상을 포함할 수 있다.The dielectric composition according to embodiments of the present invention may include, as a second subcomponent, at least one selected from the group consisting of oxide of Si element, carbonate of Si element, and glass containing Si element.
제2부성분은 상기 모재 주성분 100 몰부에 대하여 1.5 내지 4.0 몰부로 포함될 수 있다. 제2부성분의 함량은 글라스, 산화물 또는 탄산염과 같은 첨가 형태를 구분하지 않고 제2부성분에 포함된 Si 원소의 함량을 기준으로 할 수 있다.The second subcomponent may be included in an amount of 1.5 to 4.0 mole parts based on 100 mole parts of the base material main component. The content of the second subcomponent may be based on the content of the Si element included in the second subcomponent, regardless of the type of addition such as glass, oxide, or carbonate.
제2부성분의 함량이 유전체 모재 주성분 100 몰부에 대하여 1몰부 미만인 경우에는 유전율 및 고온내전압이 저하될 수 있으며, 4.5 몰부를 초과하여 포함되는 경우 소결성 및 치밀도 저하, 2차 상 생성 등의 문제가 있을 수 있어 바람직하지 못하다.If the content of the second subcomponent is less than 1 mole part per 100 mole parts of the main dielectric base material, the dielectric constant and high-temperature withstand voltage may be reduced, and if it is contained in excess of 4.5 mole parts, problems such as reduced sinterability and density, and secondary phase formation may occur. It may be undesirable.
제3부성분Third ingredient
본 발명의 실시 예들에 따른 유전체 조성물은 제3부성분으로서, V를 포함하는 산화물 및 이들의 탄산염 중 하나 이상을 포함할 수 있다.The dielectric composition according to embodiments of the present invention may include, as a third subcomponent, one or more of oxides containing V and carbonates thereof.
제3부성분은 모재 주성분 100 몰부에 대하여 0.1 내지 2몰부로 포함될 수 있다. 제3부성분의 함량은 산화물 또는 탄산염과 같은 첨가 형태를 구분하지 않고 제3부성분에 포함된 V 원소의 함량을 기준으로 할 수 있다. 예를 들어, 제3부성분에 포함된 V 원소의 함량은 모재 주성분 100 몰부에 대하여 0.1 내지 2몰부 이하일 수 있다.The third subcomponent may be included in an amount of 0.1 to 2 mole parts based on 100 mole parts of the base material main ingredient. The content of the third subcomponent can be based on the content of the V element included in the third subcomponent, regardless of the type of addition such as oxide or carbonate. For example, the content of element V included in the third subcomponent may be 0.1 to 2 mole parts or less based on 100 mole parts of the main component of the base material.
제3부성분은 고온에서의 용량 변화를 안정화시키는 역할을 하며, 제3부성분 함량이 모재 주성분 대비 0.1몰 미만이면 RC값이 낮아질 수 있고, 유전체 모재 주성분 100 몰부에 대하여 2몰부를 초과하는 경우에는 고온 내전압이 낮아질 수 있다.The third subcomponent plays a role in stabilizing the change in capacity at high temperatures. If the content of the third subcomponent is less than 0.1 mole compared to the base material main component, the RC value may be lowered, and if it exceeds 2 mole parts per 100 mole parts of the dielectric base material main component, the high temperature The withstand voltage may be lowered.
제4부성분Fourth ingredient
본 발명의 실시 예들에 따른 유전체 조성물은 제4부성분으로서, Mn, Cr, Fe, Ni, Co, Cu 및 Zn으로 이루어진 군에서 선택되는 하나 이상의 원소, 이들의 산화물 및 이들의 탄산염 중 하나 이상을 포함할 수 있다.The dielectric composition according to embodiments of the present invention contains, as a fourth subcomponent, at least one element selected from the group consisting of Mn, Cr, Fe, Ni, Co, Cu, and Zn, their oxides, and their carbonates. can do.
제4부성분은 모재 주성분 100몰부에 대하여 0.1 내지 2몰부로 포함될 수 있다. 제4부성분의 함량은 산화물 또는 탄산염과 같은 첨가 형태를 구분하지 않고 제4부성분에 포함된 Mn, Cr, Fe, Ni, Co, Cu 및 Zn 중 적어도 하나 이상의 원소의 함량을 기준으로 할 수 있다. 예를 들어, 제4부성분에 포함된 Mn, Cr, Fe, Ni, Co, Cu, 및 Zn중 적어도 하나 이상의 원자가 가변 억셉터 원소의 함량의 총합은 모재 주성분 100 몰부에 대하여 0.1 내지 2 몰부일 수 있다.The fourth subcomponent may be included in an amount of 0.1 to 2 mole parts based on 100 mole parts of the base material main ingredient. The content of the fourth subcomponent may be based on the content of at least one element among Mn, Cr, Fe, Ni, Co, Cu, and Zn included in the fourth subcomponent, regardless of the type of addition such as oxide or carbonate. For example, the total content of at least one valence variable acceptor element among Mn, Cr, Fe, Ni, Co, Cu, and Zn contained in the fourth subcomponent may be 0.1 to 2 mole parts based on 100 mole parts of the base material main component. there is.
제4부성분은 IR 값을 증가시키는 역할을 하며, 제4부성분의 함량이 0.1 몰부 미만이면 IR 특성이 저하될 수 있어 신뢰성이 하락할 수 있다. 또한, 제4부성분의 함량이 2 몰부를 초과하는 경우에는 고온 가속 수명이 저하될 수 있다.The fourth subcomponent serves to increase the IR value, and if the content of the fourth subcomponent is less than 0.1 mole part, the IR characteristics may deteriorate and reliability may decrease. Additionally, if the content of the fourth subcomponent exceeds 2 molar parts, the high temperature accelerated life may be reduced.
제5부성분Fifth subingredient
본 발명의 실시 예들에 따른 유전체 조성물은 제5부성분으로서 Ba 및 Ca 원소 중 하나 이상의 원소의 산화물 및 탄산염으로 이루어진 군에서 선택되는 하나 이상을 포함할 수 있다.The dielectric composition according to embodiments of the present invention may include, as a fifth subcomponent, at least one selected from the group consisting of oxides and carbonates of one or more of the elements Ba and Ca.
제5부성분은 모재 주성분 100몰부에 대하여 2 내지 4.5 몰부로 포함될 수 있다. 제5부성분의 함량은 산화물 또는 탄산염과 같은 첨가 형태를 구분하지 않고 제5부성분에 포함된 Ba 및 Ca 원소 중 하나 이상의 원소의 함량의 합을 기준으로 할 수 있다. 예를 들어, 제5부성분에 포함된 Ba 및 Ca 원소 중 하나 이상의 원소의 함량의 합은 모재 주성분 100 몰부에 대하여 2 내지 4.5 몰부일 수 있다.The fifth subcomponent may be included in an amount of 2 to 4.5 mole parts based on 100 mole parts of the base material main ingredient. The content of the fifth subcomponent may be based on the sum of the contents of one or more of the Ba and Ca elements included in the fifth subcomponent, regardless of the type of addition such as oxide or carbonate. For example, the sum of the contents of one or more of the Ba and Ca elements included in the fifth subcomponent may be 2 to 4.5 mole parts based on 100 mole parts of the base material main component.
제5부성분이 모재 주성분 100 몰부에 대하여 2 내지 4.5 몰부로 포함되는 경우 고온 내전압 특성이 향상되고, 고온에서의 커패시턴스 변화량이 안정될 수 있다.When the fifth subcomponent is included in an amount of 2 to 4.5 mole parts based on 100 mole parts of the main component of the base material, high-temperature withstand voltage characteristics are improved and the capacitance change at high temperature can be stabilized.
제6부성분6th subingredient
본 발명의 실시 예들에 따른 유전체 조성물은 제6부성분으로서 Yb 및 Y 원소 중 하나 이상의 원소의 산화물 및 탄산염으로 이루어진 군에서 선택되는 하나 이상을 포함할 수 있다. 대안적으로, 제6부성분은 Yb 및 Y원소 대신 다른 희토류 원소인 Dy, Ho, Sm, Gd, Er, La, Ce 및 Nd 중 하나 이상 원소의 산화물 및 탄산염으로 이루어진 군에서 선택되는 하나 이상을 포함할 수도 있다.The dielectric composition according to embodiments of the present invention may include, as a sixth subcomponent, at least one selected from the group consisting of oxides and carbonates of at least one of Yb and Y elements. Alternatively, the sixth subcomponent includes one or more selected from the group consisting of oxides and carbonates of one or more of Dy, Ho, Sm, Gd, Er, La, Ce and Nd, which are other rare earth elements in place of Yb and Y elements. You may.
제6부성분은 상기 모재 주성분 100 몰부에 대하여 2 내지 4 몰부로 포함될 수 있다. 제6부성분의 함량은 산화물 또는 탄산염과 같은 첨가 형태를 구분하지 않고 제6부성분에 포함된 원소의 함량을 기준으로 할 수 있다. 예를 들어, 제6부성분에 포함된 원소의 함량의 총합은 모재 주성분 100 몰부에 대하여 2 내지 4 몰부일 수 있다.The sixth subcomponent may be included in an amount of 2 to 4 mole parts based on 100 mole parts of the base material main ingredient. The content of the sixth subcomponent can be based on the content of the element included in the sixth subcomponent without distinguishing the form of addition such as oxide or carbonate. For example, the total content of elements included in the sixth subcomponent may be 2 to 4 molar parts based on 100 molar parts of the base material main component.
제6부성분은 본 발명의 실시 예들에 따른 유전체 조성물로 형성된 적층 세라믹 커패시터의 신뢰성 저하를 막는 역할을 한다. The sixth subcomponent serves to prevent a decrease in reliability of the multilayer ceramic capacitor formed with the dielectric composition according to embodiments of the present invention.
제6부성분의 함량이 모재 주성분 100 몰부에 대하여 2 몰부 미만이면 고온부 TCC(temperature coefficient of capacitance)가 개선효과가 크게 나타나지 않을 수 있고, 제6부성분의 함량이 모재 주성분 100 몰부에 대하여 4 몰부를 초과하면 고온 내전압 특성이 저하될 수 있다.If the content of the sixth subcomponent is less than 2 mole parts with respect to 100 mole parts of the main component of the base material, the effect of improving the TCC (temperature coefficient of capacitance) of the high temperature part may not be significant, and if the content of the sixth subcomponent exceeds 4 mole parts with respect to 100 mole parts of the main component of the base material. Doing so may deteriorate the high-temperature withstand voltage characteristics.
실험 예Experiment example
제1주성분 및 제2주성분을 포함하는 모재 분말인 1-z(Ba1-xCax)TiO3 + z(Ba1-yCay)TiO3 혼합 분말은 고상법을 적용하여 제조하였다.1 - z ( Ba 1 - x Ca
출발원료는 BaCO3, TiO2 및 CaCO3이다. 이들 출발원료 파우더를 볼밀로 혼합하고 900~1000℃ 범위에 하소하여 입자 크기 250nm의 (Ba1-xCax)TiO3 제1주성분 분말과 (Ba1-yCay)TiO3 제2주성분 분말을 준비하였다. Starting materials are BaCO 3 , TiO 2 and It is CaCO 3 . These starting raw material powders were mixed in a ball mill and calcined in the range of 900 to 1000°C to produce (Ba 1-x Ca x )TiO 3 first main ingredient powder and (Ba 1-y Ca y )TiO 3 second main ingredient powder with a particle size of 250 nm. prepared.
제1주성분 분말 및 제2주성분 분말에 부성분 첨가제 파우더를 조성비에 맞게 첨가한 후, 주성분과 부성분이 포함된 원료 분말을 지르코니아 볼을 혼합/분산 메디아로 사용하고 에탄올/톨루엔과 분산제 및 바인더를 혼합하여, 소정 시간(예, 20 시간) 동안 볼밀링 하였다.After adding the secondary ingredient additive powder to the first main ingredient powder and the second main ingredient powder according to the composition ratio, the raw material powder containing the main ingredient and secondary ingredient is mixed with ethanol/toluene, dispersant, and binder using a zirconia ball as a mixing/dispersing media. , ball milling was performed for a predetermined period of time (e.g., 20 hours).
제조된 슬러리는 닥터 블레이드 방식의 코터를 이용하여 10 ㎛의 두께로 성형시트를 제조하였다. 성형시트에 내부전극 인쇄를 하였다. 상하 커버는 커버용 시트를 25 층으로 적층하여 제작하였고, 21 층의 인쇄된 활성시트를 가압하며 적층하여 압착바(bar)를 제작하였다. 압착바는 절단기를 이용하여 3225(길이×폭×두께가 3.2mm×2.5mm×2.5mm) 크기의 칩으로 절단하였다.The prepared slurry was used to manufacture a molded sheet with a thickness of 10 ㎛ using a doctor blade type coater. Internal electrodes were printed on the molded sheet. The upper and lower covers were manufactured by stacking 25 layers of cover sheets, and 21 layers of printed active sheets were stacked while pressing to create a pressed bar. The pressed bar was cut into chips of size 3225 (length x width x thickness 3.2 mm x 2.5 mm x 2.5 mm) using a cutter.
제작이 완료된 칩을 가소한 뒤에 환원 분위기(0.1% H2/99.9% N2, H2O/H2/N2 분위기)에서 1250 ~ 1350℃의 온도에서 1시간 이상 소성한 후, 1000℃에서 질소(N2) 분위기에서 재산화를 2시간 이상 실시하여 열처리하였다. After calcining the manufactured chip, it is fired in a reducing atmosphere (0.1% H 2 /99.9% N 2 , H 2 O/H 2 /N 2 atmosphere) at a temperature of 1250 to 1350°C for more than 1 hour, and then at 1000°C. Heat treatment was performed by re-oxidation in a nitrogen (N2) atmosphere for more than 2 hours.
소성된 칩에 대해 도전 페이스트를 이용하여 터미네이션 공정 및 전극 소성을 거쳐 외부전극을 완성하였다.External electrodes were completed on the fired chip through a termination process and electrode firing using conductive paste.
상기와 같이 완성된 적층 세라믹 커패시터 시편에 대해 용량(유전율), 온도에 따른 정전용량의 변화(TCC) 및 고온내전압 등을 측정 및 평가하였다. 또한, 이와 더불어 상온 절연저항, 고온가속수명, 손실계수 등을 평가하였으나 기재하지는 않는다.Capacitance (dielectric constant), change in capacitance with temperature (TCC), and high-temperature withstand voltage were measured and evaluated for the multilayer ceramic capacitor specimen completed as described above. In addition, room temperature insulation resistance, high temperature acceleration life, and loss coefficient were evaluated, but are not described.
상온 정전용량은 LCR-meter를 이용하여 1 kHz, AC 0.2 V/㎛ 조건에서 용량을 측정하였다. 정전용량과 적층 세라믹 커패시터(MLCC) 칩의 유전체 두께, 내부전극 면적, 적층수로부터 적층 세라믹 커패시터(MLCC) 칩의 유전율을 계산하였다.Room temperature capacitance was measured using an LCR-meter under the conditions of 1 kHz and AC 0.2 V/㎛. The dielectric constant of the multilayer ceramic capacitor (MLCC) chip was calculated from the capacitance, dielectric thickness, internal electrode area, and number of layers of the multilayer ceramic capacitor (MLCC) chip.
온도에 따른 정전용량의 변화는 -55℃에서 150℃의 온도 범위에서 측정되었다. 해당 온도 범위에서, LCR-meter를 이용하여 1kHz, 1Vrms 조건에서 용량 변화를 측정하였다. 이 때, 25℃에서의 정전용량 대비 각 온도에서의 정전용량의 변화율(%)을 측정한다. 본 명세서에서는 150℃에서의 정전용량 변화를 기재하도록 한다.The change in capacitance according to temperature was measured in the temperature range from -55℃ to 150℃. In the corresponding temperature range, the change in capacity was measured at 1kHz and 1Vrms using an LCR-meter. At this time, the rate of change (%) of capacitance at each temperature compared to the capacitance at 25°C is measured. In this specification, the change in capacitance at 150°C is described.
고온 내전압은 150℃에서 전압 스텝(Voltage step) DC 5 V/㎛를 10분간 인가하고 이 전압 스텝을 계속 증가시키면서 측정할 때, IR이 100GΩ 이상을 견디는 전압을 측정하였다. 고온 내전압이 50 V/μm이상인 경우에는 양호로 판정하였고, 40V/μm 미만인 경우에는 불량으로 판정하였다.High-temperature withstand voltage was measured by applying a voltage step of DC 5 V/㎛ for 10 minutes at 150°C and continuously increasing this voltage step, and the voltage at which IR withstood more than 100GΩ was measured. If the high-temperature withstand voltage was more than 50 V/μm, it was judged as good, and if it was less than 40 V/μm, it was judged as bad.
RC값은 그 값이 1000이상인 경우 양호로 판정하고, 1000 미만인 경우 불량으로 판정하였다.The RC value was judged as good if it was over 1000, and bad if it was less than 1000.
샘플Sample | 주성분 1Main ingredient 1 | 주성분 2Main ingredient 2 |
혼합 몰비mix molar ratio |
모재 주성분 100몰 당 부성분 몰 수Number of moles of minor ingredients per 100 moles of main ingredient |
첨가제 비율additive ratio |
|||||||
(Ba1-xCax)TiO3 (Ba 1-x Ca x )TiO 3 | (Ba1-yCay)TiO3 (Ba 1-y Ca y )TiO 3 | 1One | 22 | 33 | 44 | 55 | 66 | (Ba+Ca+Yb+Y)/Si(Ba+Ca+Yb+Y)/Si | ||||
xx | yy | zz | MgCO3 MgCO 3 | SiO2 SiO 2 | V2O5 V 2 O 5 | MnO2 MnO 2 | CaCO3 CaCO 3 | BaCO3 BaCO 3 | Y2O3 Y 2 O 3 | Yb2O3 Yb 2 O 3 | ||
1One | 0.010.01 | 0.020.02 | 0.20.2 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.30.3 | 1.091.09 | 2.392.39 |
22 | 0.010.01 | 0.020.02 | 0.60.6 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.30.3 | 1.091.09 | 2.392.39 |
33 | 0.010.01 | 0.050.05 | 0.10.1 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.30.3 | 1.091.09 | 2.392.39 |
44 | 0.010.01 | 0.050.05 | 0.20.2 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.30.3 | 1.091.09 | 2.392.39 |
55 | 0.010.01 | 0.050.05 | 0.60.6 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.30.3 | 1.091.09 | 2.392.39 |
66 | 0.010.01 | 0.050.05 | 0.70.7 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.30.3 | 1.091.09 | 2.392.39 |
77 | 0.010.01 | 0.150.15 | 0.20.2 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.30.3 | 1.091.09 | 2.392.39 |
88 | 0.010.01 | 0.150.15 | 0.60.6 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.30.3 | 1.091.09 | 2.392.39 |
99 | 0.010.01 | 0.20.2 | 0.20.2 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.30.3 | 1.091.09 | 2.392.39 |
1010 | 0.010.01 | 0.20.2 | 0.60.6 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.30.3 | 1.091.09 | 2.392.39 |
1111 | 0.020.02 | 0.20.2 | 0.20.2 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.30.3 | 1.091.09 | 2.392.39 |
1212 | 0.020.02 | 0.20.2 | 0.60.6 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.30.3 | 1.091.09 | 2.392.39 |
샘플Sample | 유전율permittivity | 고온 TCC(150℃)High temperature TCC (150℃) | RC 값RC value |
고온(150℃) 내전압(V/μm)High temperature (150℃) Withstand voltage (V/μm) |
특성 판정Trait Judgment |
1One | 25302530 | -19.8-19.8 | 양호Good | 양호Good | XX |
22 | 24812481 | -18.6-18.6 | 양호Good | 양호Good | XX |
33 | 24572457 | -17.5-17.5 | 양호Good | 양호Good | XX |
44 | 24392439 | -13.8-13.8 | 양호Good | 양호Good | OO |
55 | 24122412 | -13.5-13.5 | 양호Good | 양호Good | OO |
66 | 23972397 | -13.1-13.1 | 불량error | 양호Good | XX |
77 | 22972297 | -12.9-12.9 | 양호Good | 양호Good | OO |
88 | 22712271 | -13.1-13.1 | 양호Good | 양호Good | OO |
99 | 21732173 | -12.7-12.7 | 불량error | 양호Good | XX |
1010 | 21312131 | -12.5-12.5 | 불량error | 양호Good | XX |
1111 | 23772377 | -17.2-17.2 | 양호Good | 양호Good | XX |
1212 | 23272327 | -16.8-16.8 | 양호Good | 양호Good | XX |
표 1의 샘플 1~12는 제1부성분 Mg의 함량이 1.45몰, 제2부성분 Si의 함량이 2.69몰, 제3부성분 V의 함량이 0.12몰, 제4부성분 Mn 함량이 0.35몰, 제5부성분 (Ca, Ba) 함량의 합이 3.65몰, 제6부성분 (Y, Yb)의 함량의 합이 2.78로 고정된 상태에서, 제1주성분의 Ca함량, 제2주성분의 Ca함량 및 제1주성분 및 제2주성분의 혼합 몰비를 변화시킨 샘플들을 나타내며, 표 2의 샘플 1~12는 표 1의 샘플 1~12에 해당하는 시료의 특성을 나타낸다.Samples 1 to 12 in Table 1 have a content of 1.45 moles of the first subcomponent Mg, 2.69 moles of the second subcomponent Si, 0.12 moles of the third subcomponent V, 0.35 moles of the fourth subcomponent Mn, and 0.35 moles of the fifth subcomponent. With the sum of the contents of (Ca, Ba) fixed at 3.65 mol and the sum of the contents of the sixth subcomponents (Y, Yb) fixed at 2.78, the Ca content of the first main component, the Ca content of the second main component, and the first main component and It represents samples in which the mixing molar ratio of the second main component was changed, and Samples 1 to 12 in Table 2 show the characteristics of the samples corresponding to Samples 1 to 12 in Table 1.
한편, 샘플 1~10은 제1주성분의 Ca의 함량 x가 0.01이고, 샘플 11~12는 제1주성분의 Ca의 함량 x가 0.02이다.Meanwhile, for samples 1 to 10, the Ca content x of the first main component is 0.01, and for samples 11 to 12, the Ca content x of the first main component is 0.02.
제2주성분의 Ca의 함량 y가 0.05이하이고(예컨대, 0.02) 혼합 몰비 z가 0.2 및 0.6인 경우(샘플 1 및 2) 고온부 TCC가 15%를 벗어나 온도 변화에 취약하게 된다. When the Ca content y of the second main component is 0.05 or less (e.g., 0.02) and the mixing molar ratio z is 0.2 and 0.6 (samples 1 and 2), the TCC of the high temperature part exceeds 15%, making it vulnerable to temperature changes.
또한, 제2주성분의 Ca의 함량 y가 0.05이더라도, 혼합 몰비 z가 0.2 미만(예컨대, 0.1)인 경우(샘플 3)에도 고온부 TCC가 15%를 벗어나게 되며, 제2주성분의 Ca의 함량 y가 0.6을 초과(예컨대, 0.7)하는 경우(샘플 6)에는 RC 값이 1000 미만이 되어 신뢰성이 낮아지게 된다.In addition, even if the Ca content y of the second main component is 0.05, even when the mixing molar ratio z is less than 0.2 (e.g., 0.1) (Sample 3), the TCC of the high temperature part exceeds 15%, and the Ca content y of the second main component is If it exceeds 0.6 (eg, 0.7) (Sample 6), the RC value becomes less than 1000, which reduces reliability.
또한, 제2주성분의 Ca의 함량 y가 0.15을 초과하고(예컨대, 0.2) 혼합 몰비 z가 0.2 내지 0.6인 경우(샘플 9 및 10)에도 RC 값이 1000 미만이 되어 신뢰성이 낮아지게 된다.In addition, even when the Ca content y of the second main component exceeds 0.15 (e.g., 0.2) and the mixing molar ratio z is 0.2 to 0.6 (Samples 9 and 10), the RC value is less than 1000, resulting in lower reliability.
또한, 제1주성분의 Ca의 함량 x가 0.01을 초과하는 경우(예컨대, 0.02), 제2주성분의 Ca의 함량 y가 0.05 내지 0.15이고, 혼합 몰비 z가 0.2 내지 0.6이더라도(샘플 11 및 12), 고온부 TCC가 15%를 벗어나게 된다. In addition, when the Ca content x of the first main component exceeds 0.01 (e.g., 0.02), even if the Ca content y of the second main component is 0.05 to 0.15 and the mixing molar ratio z is 0.2 to 0.6 (Samples 11 and 12) , the TCC of the high temperature part deviates from 15%.
결론적으로, 제1주성분의 Ca의 함량 x가 0.01 이하이고, 제2주성분의 Ca의 함량 y가 0.05 내지 0.15이고, 혼합 몰비 z가 0.2 내지 0.6인 경우(샘플 4, 5, 7 및 8)에는 고온부 TCC가 ±15% 이내로 X8R 규격을 만족하며, 1000 이상의 양호한 RC 특성 구현이 가능하다. 따라서, 제1주성분의 함량 x는 0.01 이하이고, 제2주성분의 함량 y는 0.05 내지 0.15이고, 혼합 몰비 z는 0.2 내지 0.6이라고 할 수 있다.In conclusion, when the Ca content x of the first main component is 0.01 or less, the Ca content y of the second main component is 0.05 to 0.15, and the mixing molar ratio z is 0.2 to 0.6 (samples 4, 5, 7 and 8) The high-temperature TCC satisfies the X8R standard within ±15%, and good RC characteristics of over 1000 can be achieved. Therefore, it can be said that the content x of the first main component is 0.01 or less, the content y of the second main ingredient is 0.05 to 0.15, and the mixing molar ratio z is 0.2 to 0.6.
샘플Sample | 주성분 1Main ingredient 1 | 주성분 2Main ingredient 2 |
혼합 몰비mix molar ratio |
모재 주성분 100몰 당 부성분 몰 수Number of moles of minor ingredients per 100 moles of main ingredient |
첨가제 비율additive ratio |
|||||||
(Ba1-xCax)TiO3 (Ba 1-x Ca x )TiO 3 | (Ba1-yCay)TiO3 (Ba 1-y Ca y )TiO 3 | 1One | 22 | 33 | 44 | 55 | 66 | (Ba+Ca+Yb+Y)/Si(Ba+Ca+Yb+Y)/Si | ||||
xx | yy | zz | MgCO3 MgCO 3 | SiO2 SiO 2 | V2O5 V 2 O 5 | MnO2 MnO 2 | CaCO3 CaCO 3 | BaCO3 BaCO 3 | Y2O3 Y 2 O 3 | Yb2O3 Yb 2 O 3 | ||
1313 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | -- | 1.01.0 | 0.30.3 | 1.091.09 | 1.411.41 |
1414 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | -- | 22 | 0.30.3 | 1.091.09 | 1.671.67 |
1515 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | -- | 4.54.5 | 0.30.3 | 1.091.09 | 3.163.16 |
1616 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | -- | 55 | 0.30.3 | 1.091.09 | 3.723.72 |
1717 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 1.01.0 | -- | 0.30.3 | 1.091.09 | 1.411.41 |
1818 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 22 | -- | 0.30.3 | 1.091.09 | 1.671.67 |
1919 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 4.54.5 | -- | 0.30.3 | 1.091.09 | 3.163.16 |
2020 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 55 | -- | 0.30.3 | 1.091.09 | 3.723.72 |
샘플Sample | 유전율permittivity | 고온 TCC(150℃)High temperature TCC (150℃) | RC 값RC value |
고온(150℃) 내전압(V/μm)High temperature (150℃) Withstand voltage (V/μm) |
특성 판정Trait Judgment |
1313 | 33213321 | -18.7-18.7 | 양호Good | 불량error | XX |
1414 | 25132513 | -13.7-13.7 | 양호Good | 양호Good | OO |
1515 | 24632463 | -13.5-13.5 | 양호Good | 양호Good | OO |
1616 | 22132213 | -16.8-16.8 | 불량error | 불량error | XX |
1717 | 33113311 | -19.2-19.2 | 양호Good | 불량error | XX |
1818 | 24912491 | -14.1-14.1 | 양호Good | 양호Good | OO |
1919 | 24732473 | -13.9-13.9 | 양호Good | 양호Good | OO |
2020 | 21332133 | -17.2-17.2 | 불량error | 불량error | XX |
표 3의 샘플 13~20는 제1주성분의 Ca의 함량 x가 0.05이고, 제2주성분의 Ca의 함량 y가 0.1이고, 제1부성분 Mg의 함량이 1.45몰, 제2부성분 Si의 함량이 2.69몰, 제3부성분 V의 함량이 0.12몰, 제4부성분 Mn 함량이 0.35몰, 제6부성분 (Y, Yb)의 함량의 합이 2.78로 고정된 상태에서, 제5부성분 (Ca, Ba) 함량을 변화시킨 샘플들을 나타내며, 표 4의 샘플 13~20은 표 3의 샘플 13~20에 해당하는 시료의 특성을 나타낸다.Samples 13 to 20 in Table 3 have a Ca content x of the first main component of 0.05, a Ca content y of the second main component of 0.1, a content of the first subcomponent Mg of 1.45 mol, and a content of the second subcomponent Si of 2.69 mol. Mol, with the content of the third subcomponent V being 0.12 mole, the content of the fourth subcomponent Mn being 0.35 mole, and the sum of the contents of the sixth subcomponent (Y, Yb) being fixed at 2.78, the content of the fifth subcomponent (Ca, Ba) indicates samples that have changed, and samples 13 to 20 in Table 4 show the characteristics of the samples corresponding to samples 13 to 20 in Table 3.
제5부성분 Ba의 함량이 2몰 미만(예컨대, 1.0몰)인 경우(샘플 13)에는 유전율이 3,000이상으로 높아지고 고온 TCC(150℃)가 ±15%를 벗어나 온도 변화에 취약한 문제가 있다. 또한, 제5부성분 Ba의 함량이 4.5몰을 초과하는 경우(샘플 16)에는 고온 TCC(150℃)가 ±15%를 벗어나며 RC값 및 고온 내전압 수치가 모두 불량인 문제가 있다.When the content of the fifth subcomponent Ba is less than 2 mol (e.g., 1.0 mol) (sample 13), the dielectric constant increases to over 3,000 and the high temperature TCC (150°C) deviates from ±15%, making it vulnerable to temperature changes. In addition, when the content of the fifth subcomponent Ba exceeds 4.5 mol (sample 16), the high temperature TCC (150°C) deviates from ±15% and both the RC value and high temperature withstand voltage values are defective.
제5부성분 Ba의 함량이 2 내지 4.5몰인 경우(샘플 14 및 15), 고온 TCC가 ±15% 이내로 X8R 규격을 만족하며, 1,000 이상의 양호한 RC값 및 50V/μm이상의 양호한 고온내전압 특성 구현이 가능하다. 또한, 샘플 17~20은 샘플 13~16에서 제5부성분 Ba을 Ca로 치환한 것인데, 유전율, RC 값, 고온 TCC 및 고온내전압 특성이 실질적으로 동일한 것을 확인할 수 있다. When the content of the fifth subcomponent Ba is 2 to 4.5 mol (Samples 14 and 15), the high temperature TCC satisfies the . In addition, Samples 17 to 20 are obtained by replacing the fifth subcomponent Ba with Ca in Samples 13 to 16, and it can be confirmed that the dielectric constant, RC value, high temperature TCC and high temperature withstand voltage characteristics are substantially the same.
따라서, 제5부성분 (Ba, Ca)의 함량의 합의 적정 범위는 모재 주성분 100 몰부에 대해 2 내지 4.5몰이라고 할 수 있다.Therefore, it can be said that the appropriate range of the sum of the contents of the fifth subcomponent (Ba, Ca) is 2 to 4.5 mole for 100 mole parts of the main component of the base material.
샘플Sample | 주성분 1Main ingredient 1 | 주성분 2Main ingredient 2 |
혼합 몰비mix molar ratio |
모재 주성분 100몰 당 부성분 몰 수Number of moles of minor ingredients per 100 moles of main ingredient |
첨가제 비율additive ratio |
|||||||
(Ba1-xCax)TiO3 (Ba 1-x Ca x )TiO 3 | (Ba1-yCay)TiO3 (Ba 1-y Ca y )TiO 3 | 1One | 22 | 33 | 44 | 55 | 66 | (Ba+Ca+Yb+Y)/Si(Ba+Ca+Yb+Y)/Si | ||||
xx | yy | zz | MgCO3 MgCO 3 | SiO2 SiO 2 | V2O5 V 2 O 5 | MnO2 MnO 2 | CaCO3 CaCO 3 | BaCO3 BaCO 3 | Y2O3 Y 2 O 3 | Yb2O3 Yb 2 O 3 | ||
2121 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | -- | 0.50.5 | 1.731.73 |
2222 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | -- | 1One | 2.102.10 |
2323 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | -- | 22 | 2.842.84 |
2424 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | -- | 2.52.5 | 3.223.22 |
2525 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 1One | -- | 2.102.10 |
2626 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 22 | -- | 2.842.84 |
2727 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 2.692.69 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 2.52.5 | -- | 3.223.22 |
샘플Sample | 유전율permittivity | 고온 TCC(150℃)High temperature TCC (150℃) | RC 값RC value |
고온(150℃) 내전압(V/μm)High temperature (150℃) Withstand voltage (V/μm) |
특성 판정Trait Judgment |
2121 | 26112611 | -18.7-18.7 | 양호Good | 양호Good | XX |
2222 | 25872587 | -13.7-13.7 | 양호Good | 양호Good | OO |
2323 | 24912491 | -13.5-13.5 | 양호Good | 양호Good | OO |
2424 | 23672367 | -12.9-12.9 | 양호Good | 불량error | XX |
2525 | 33113311 | -19.2-19.2 | 양호Good | 불량error | XX |
2626 | 24912491 | -14.1-14.1 | 양호Good | 양호Good | OO |
2727 | 24732473 | -13.9-13.9 | 양호Good | 양호Good | OO |
표 5의 샘플 21~27는 제1주성분의 Ca의 함량 x가 0.05이고, 제2주성분의 Ca의 함량 y가 0.1이고, 제1부성분 Mg의 함량이 1.45몰, 제2부성분 Si의 함량이 2.69몰, 제3부성분 V의 함량이 0.12몰, 제4부성분 Mn 함량이 0.35몰, 제5부성분 (Ca, Ba) 함량 합이 3.65몰로 고정된 상태에서, 제6부성분 (Y, Yb)의 함량을 변화시킨 샘플들을 나타내며, 표 6의 샘플 21~27은 표 5의 샘플 21~27에 해당하는 시료의 특성을 나타낸다.Samples 21 to 27 in Table 5 have a Ca content x of the first main component of 0.05, a Ca content y of the second main component of 0.1, a content of the first subcomponent Mg of 1.45 mol, and a content of the second subcomponent Si of 2.69 mol. Mol, with the content of the third subcomponent V fixed at 0.12 mole, the content of the fourth subcomponent Mn at 0.35 mole, and the sum of the contents of the fifth subcomponent (Ca, Ba) fixed at 3.65 mole, the content of the sixth subcomponent (Y, Yb) The changed samples are shown, and samples 21 to 27 in Table 6 show the characteristics of the samples corresponding to samples 21 to 27 in Table 5.
제6부성분 Yb의 함량이 0몰인 경우(샘플 21)에는 고온 TCC(150℃)가 ±15%를 벗어나 온도 변화에 취약한 문제가 있다. 또한, 제6부성분 Yb의 함량이 4몰을 초과하는 경우(샘플 24)에는 고온 TCC(150℃)가 ±15%를 벗어나지는 않지만 고온 내전압 특성이 불량인 문제가 있다. When the content of the sixth subcomponent Yb is 0 mol (sample 21), the high temperature TCC (150°C) deviates from ±15%, making it vulnerable to temperature changes. In addition, when the content of the sixth subcomponent Yb exceeds 4 mol (sample 24), the high temperature TCC (150°C) does not exceed ±15%, but there is a problem of poor high temperature withstand voltage characteristics.
제6부성분 Yb의 함량이 0몰을 초과하고 4몰 이하인 범위에서는 (샘플 22~23) 고온 TCC가 ±15% 이내로 X8R 규격을 만족하며, 50V/μm이상의 양호한 고온내전압 특성 구현이 가능하다. 또한, 샘플 24~27은 샘플 21~23에서 제6부성분 Yb를 Y로 치환한 것인데, 유전율, RC 값, 고온 TCC 및 고온내전압 특성이 실질적으로 동일한 것을 확인할 수 있다.In the range where the content of the sixth subcomponent Yb exceeds 0 mole and is less than 4 mole (samples 22 to 23), the high temperature TCC satisfies the X8R standard within ±15%, and good high temperature withstand voltage characteristics of 50V/μm or more are possible. In addition, samples 24 to 27 are obtained by replacing the sixth subcomponent Yb with Y in samples 21 to 23, and it can be confirmed that the dielectric constant, RC value, high temperature TCC and high temperature withstand voltage characteristics are substantially the same.
따라서, 제6부성분 (Y, Yb)의 적정 함량 범위는 모재 주성분 100 몰부에 대해 원소비율로 0 초과 4몰부 이하라고 할 수 있다.Therefore, the appropriate content range of the sixth subcomponent (Y, Yb) can be said to be more than 0 and less than 4 mole parts in element ratio for 100 mole parts of the main component of the base material.
샘플Sample | 주성분 1Main ingredient 1 | 주성분 2Main ingredient 2 |
혼합 몰비mix molar ratio |
모재 주성분 100몰 당 부성분 몰 수Number of moles of minor ingredients per 100 moles of main ingredient |
첨가제 비율additive ratio |
|||||||
(Ba1-xCax)TiO3 (Ba 1-x Ca x )TiO 3 | (Ba1-yCay)TiO3 (Ba 1-y Ca y )TiO 3 | 1One | 22 | 33 | 44 | 55 | 66 | (Ba+Ca+Yb+Y)/Si(Ba+Ca+Yb+Y)/Si | ||||
xx | yy | zz | MgCO3 MgCO 3 | SiO2 SiO 2 | V2O5 V 2 O 5 | MnO2 MnO 2 | CaCO3 CaCO 3 | BaCO3 BaCO 3 | Y2O3 Y 2 O 3 | Yb2O3 Yb 2 O 3 | ||
2828 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 1.51.5 | 0.060.06 | 0.350.35 | 2.002.00 | 2.002.00 | 0.750.75 | 1.201.20 | 5.275.27 |
2929 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 1.71.7 | 0.060.06 | 0.350.35 | 2.002.00 | 1.651.65 | 0.750.75 | 1.201.20 | 4.644.64 |
3030 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 44 | 0.060.06 | 0.350.35 | 1.001.00 | 1.001.00 | 0.40.4 | 0.60.6 | 1.001.00 |
3131 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 3.83.8 | 0.060.06 | 0.350.35 | 1.001.00 | 1.001.00 | 0.40.4 | 0.60.6 | 1.061.06 |
3232 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 1One | 0.060.06 | 0.350.35 | 1.001.00 | 1.001.00 | 0.50.5 | 1.31.3 | 5.65.6 |
3333 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 1One | 0.060.06 | 0.350.35 | 1.001.00 | 1.001.00 | 0.350.35 | 0.90.9 | 4.54.5 |
3434 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 44 | 0.060.06 | 0.350.35 | 1.001.00 | 1.001.00 | 0.350.35 | 0.650.65 | 1One |
3535 | 0.0050.005 | 0.10.1 | 0.40.4 | 1.451.45 | 44 | 0.060.06 | 0.350.35 | 1.001.00 | 1.001.00 | 0.40.4 | 0.750.75 | 1.0751.075 |
샘플Sample | 유전율permittivity | 고온 TCC(150℃)High temperature TCC (150℃) | RC 값RC value |
고온(150℃) 내전압(V/μm)High temperature (150℃) Withstand voltage (V/μm) |
특성 판정Trait Judgment |
2828 | 27172717 | -17.3-17.3 | 양호Good | 불량error | XX |
2929 | 26172617 | -13.7-13.7 | 양호Good | 양호Good | OO |
3030 | 24032403 | -16.5-16.5 | 양호Good | 양호Good | XX |
3131 | 24812481 | -14.1-14.1 | 양호Good | 양호Good | OO |
3232 | 27172717 | -16.4-16.4 | 양호Good | 양호Good | XX |
3333 | 25912591 | -14.8-14.8 | 양호Good | 양호Good | OO |
3434 | 23712371 | -16.1-16.1 | 양호Good | 양호Good | XX |
3535 | 22912291 | -14.7-14.7 | 양호Good | 양호Good | OO |
표 7의 샘플 28~35는 제1주성분의 Ca의 함량 x가 0.05이고, 제2주성분의 Ca의 함량 y가 0.1이고, 제1부성분 Mg의 함량이 1.45몰, 제3부성분 V의 함량이 0.12몰, 제4부성분 Mn 함량이 0.35몰로 고정된 상태에서, 제2부성분 Si, 제5부성분 (Ca, Ba), 제6부성분 (Y, Yb)의 함량을 변화시킴으로써 첨가제 비율 (Ba+Ca+Yb+Y)/Si의 비율을 다양하게 변화시킨 샘플들을 나타내며, 표 8의 샘플 28~35은 표 5의 샘플 28~35에 해당하는 시료의 특성을 나타낸다.Samples 28 to 35 in Table 7 have a Ca content Mol, with the content of the fourth subcomponent Mn fixed at 0.35 mol, the additive ratio (Ba+Ca+Yb) is changed by changing the contents of the second subcomponent Si, the fifth subcomponent (Ca, Ba), and the sixth subcomponent (Y, Yb). It represents samples in which the ratio of +Y)/Si was varied, and samples 28 to 35 in Table 8 show the characteristics of the samples corresponding to samples 28 to 35 in Table 5.
제2부성분 Si, 제5부성분 (Ca, Ba), 제6부성분 (Y, Yb)의 함량이 상술한 적정 범위내에 포함되더라도, 첨가제 비율 (Ba+Ca+Yb+Y)/Si이 1.05 미만이거나(샘플 30, 34) 또는 4.64를 초과하는 경우(샘플 28, 32)에는 고온 TCC가 ±15%를 벗어나 온도 변화에 취약하거나 또는 고온 내전압 특성이 불량인 문제가 있다.Even if the contents of the second subcomponent Si, the fifth subcomponent (Ca, Ba), and the sixth subcomponent (Y, Yb) are within the above-mentioned appropriate range, the additive ratio (Ba+Ca+Yb+Y)/Si is less than 1.05 or (Samples 30, 34) or exceeding 4.64 (Samples 28, 32), the high-temperature TCC deviates from ±15%, making it vulnerable to temperature changes or having poor high-temperature withstand voltage characteristics.
따라서, 첨가제 비율 (Ba+Ca+Yb+Y)/Si의 적정 범위는 1.05 내지 4.64라고 할 수 있다. 이러한 사실은 상술한 샘플 1~27을 통해서도 확인할 수 있다.Therefore, the appropriate range of the additive ratio (Ba+Ca+Yb+Y)/Si can be said to be 1.05 to 4.64. This fact can also be confirmed through the samples 1 to 27 described above.
본 발명은 상술한 실시형태 및 첨부된 도면에 의해 한정되는 것이 아니며, 첨부된 청구범위에 의해 한정된다. 따라서, 청구범위에 기재된 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 다양한 형태의 치환, 변형 및 변경이 가능하다는 것은 당 기술분야의 통상의 지식을 가진 자에게는 자명할 것이며, 이 또한 첨부된 청구범위에 기재된 기술적 사상에 속한다 할 것이다.The present invention is not limited by the above-described embodiments and attached drawings, but is limited by the attached claims. Therefore, it will be apparent to those skilled in the art that various forms of substitution, modification, and change are possible without departing from the technical spirit of the present invention as set forth in the claims, and this is also subject to the appended claims. It may be said to belong to the technical idea described in .
Claims (13)
- 티탄산바륨계 모재 주성분 및 부성분을 포함하는 유전체 조성물에 있어서,In a dielectric composition containing a barium titanate-based base material main component and auxiliary components,상기 모재 주성분은 (Ba1-xCax)TiO3로 표현되는 제1주성분 및 (Ba1-yCay)TiO3로 표현되는 제2주성분을 포함하며,The base material main component includes a first main component expressed as (Ba 1-x Ca x )TiO 3 and a second main component expressed as (Ba 1-y Ca y )TiO 3 ,상기 부성분은,The above subingredients are:Mg를 포함하는 원자가 고정 억셉터 원소의, 산화물 및 탄산염 중 하나 이상을 포함하는 제1부성분;a first subcomponent comprising at least one of an oxide and a carbonate of a valence fixed acceptor element comprising Mg;Si 원소의 산화물, 탄산염 및 글라스로 이루어진 군에서 선택되는 하나 이상을 포함하는 제2부성분;A second subcomponent containing at least one selected from the group consisting of oxides, carbonates, and glasses of Si element;V 원소의 산화물 및 탄산염 중 하나 이상을 포함하는 제3부성분;a third subcomponent comprising one or more of oxides and carbonates of element V;Mn, Cr, Fe, Ni, Co, Cu, 및 Zn 중 하나 이상을 포함하는 원자가 가변 억셉터 원소의, 산화물 및 탄산염으로 이루어진 군에서 선택되는 하나 이상을 포함하는 제4부성분;A fourth subcomponent comprising at least one selected from the group consisting of oxides and carbonates of variable-valence acceptor elements including one or more of Mn, Cr, Fe, Ni, Co, Cu, and Zn;Ba 및 Ca 중 하나 이상의 원소의 산화물 및 탄산염으로 이루어진 군에서 선택되는 하나 이상을 포함하는 제5부성분; 및A fifth subcomponent containing at least one selected from the group consisting of oxides and carbonates of at least one element of Ba and Ca; andYb 및 Y 중 하나 이상의 원소의 산화물 및 탄산염으로 이루어진 군에서 선택되는 하나 이상을 포함하는 제6부성분; 중 적어도 하나의 부성분을 포함하고,A sixth subcomponent containing at least one selected from the group consisting of oxides and carbonates of at least one element of Yb and Y; Contains at least one accessory ingredient of,상기 적어도 하나의 부성분은 상기 제6부성분을 더 포함하는, The at least one subcomponent further includes the sixth subcomponent,유전체 조성물.Dielectric composition.
- 제1항에 있어서,According to paragraph 1,상기 제1주성분의 Ca의 함량 x는 0.01이하인,The Ca content x of the first main component is 0.01 or less,유전체 조성물.Dielectric composition.
- 제1항에 있어서,According to paragraph 1,상기 제2주성분의 Ca의 함량 y는 0.05 내지 0.15인,The Ca content y of the second main component is 0.05 to 0.15,유전체 조성물.Dielectric composition.
- 제1항에 있어서,According to paragraph 1,상기 제1주성분 및 상기 제2주성분의 혼합 몰비를 1-z:z라 할 때, z는 0.2 내지 0.6인When the mixing molar ratio of the first main component and the second main ingredient is 1-z:z, z is 0.2 to 0.6.유전체 조성물.Dielectric composition.
- 제1항에 있어서,According to paragraph 1,상기 적어도 하나의 부성분은 상기 제1부성분을 더 포함하고,The at least one subcomponent further includes the first subcomponent,상기 제1부성분에 포함된 Mg 원소의 함량은 상기 모재 주성분 100몰부에 대해 2몰부 이하인,The content of the Mg element contained in the first subcomponent is 2 mole parts or less with respect to 100 mole parts of the base material main component,유전체 조성물.Dielectric composition.
- 제1항에 있어서,According to paragraph 1,상기 적어도 하나의 부성분은 상기 제2부성분을 더 포함하고,The at least one subcomponent further includes the second subcomponent,상기 제2부성분에 포함된 Si 원소의 함량은 상기 모재 주성분 100몰부에 대해 1.5 내지 4.0몰부인,The content of the Si element contained in the second subcomponent is 1.5 to 4.0 mole parts with respect to 100 mole parts of the base material main component,유전체 조성물.Dielectric composition.
- 제1항에 있어서,According to paragraph 1,상기 적어도 하나의 부성분은 상기 제3부성분을 더 포함하고,The at least one subcomponent further includes the third subcomponent,상기 제3부성분에 포함된 V 원소의 함량은 상기 모재 주성분 100몰부에 대해 0.1 내지 2몰부인,The content of the V element contained in the third subcomponent is 0.1 to 2 mole parts per 100 mole parts of the base material main component,유전체 조성물.Dielectric composition.
- 제1항에 있어서,According to paragraph 1,상기 적어도 하나의 부성분은 상기 제4부성분을 더 포함하고,The at least one subcomponent further includes the fourth subcomponent,상기 제4부성분에 포함된 원자가 가변 억셉터 원소의 함량의 합은 상기 모재 주성분 100몰부에 대해 0.1 내지 2몰부인,The sum of the contents of the variable valence acceptor elements contained in the fourth subcomponent is 0.1 to 2 mole parts with respect to 100 mole parts of the base material main component,유전체 조성물.Dielectric composition.
- 제1항에 있어서,According to paragraph 1,상기 적어도 하나의 부성분은 상기 제5부성분을 더 포함하고,The at least one subcomponent further includes the fifth subcomponent,상기 제5부성분에 포함된 하나 이상의 원소의 함량은 상기 모재 주성분 100몰부에 대해 2 내지 4.5몰부인,The content of one or more elements included in the fifth subcomponent is 2 to 4.5 mole parts with respect to 100 mole parts of the base material main component,유전체 조성물.Dielectric composition.
- 제1항에 있어서,According to paragraph 1,상기 제6부성분에 포함된 하나 이상의 원소의 함량은 상기 모재 주성분 100몰부에 대해 2 내지 4 몰부인, The content of one or more elements included in the sixth subcomponent is 2 to 4 molar parts with respect to 100 molar parts of the base material main component,유전체 조성물.Dielectric composition.
- 제1항에 있어서,According to paragraph 1,상기 적어도 하나의 부성분은 상기 제2부성분 및 상기 제5부성분을 더 포함하는,The at least one subcomponent further includes the second subcomponent and the fifth subcomponent,유전체 조성물.Dielectric composition.
- 제11항에 있어서,According to clause 11,상기 제2부성분에 포함된 Si 원소, 제5부성분에 포함된 하나 이상의 원소 및 상기 제6부성분에 포함된 하나 이상의 원소의 비율로 정의되는 부성분 비율 (Ba+Ca+Yb+Y)/Si은 1.05 내지 4.64인,The subcomponent ratio (Ba+Ca+Yb+Y)/Si, defined as the ratio of the Si element contained in the second subcomponent, one or more elements contained in the fifth subcomponent, and one or more elements contained in the sixth subcomponent, is 1.05. to 4.64,유전체 조성물.Dielectric composition.
- 유전체층과 내부 전극층이 교대로 적층된 구조를 갖는 적층 세라믹 커패시터로서, 상기 유전체층은 티탄산바륨계 모재 주성분 및 적어도 부성분을 포함하며,A multilayer ceramic capacitor having a structure in which dielectric layers and internal electrode layers are alternately laminated, wherein the dielectric layer includes a barium titanate-based base material main component and at least a minor component,상기 모재 주성분은 (Ba1-xCax)TiO3로 표현되는 제1주성분 및 (Ba1-yCay)TiO3로 표현되는 제2주성분을 포함하며,The base material main component includes a first main component expressed as (Ba 1-x Ca x )TiO 3 and a second main component expressed as (Ba 1-y Ca y )TiO 3 ,상기 부성분은,The above subingredients are:Mg를 포함하는 원자가 고정 억셉터 원소의, 산화물 및 탄산염 중 하나 이상을 포함하는 제1부성분;a first subcomponent comprising at least one of an oxide and a carbonate of a valence fixed acceptor element comprising Mg;Si 원소의 산화물, 탄산염 및 글라스로 이루어진 군에서 선택되는 하나 이상을 포함하는 제2부성분;A second subcomponent containing at least one selected from the group consisting of oxides, carbonates, and glasses of Si element;V 원소의 산화물 및 탄산염 중 하나 이상을 포함하는 제3부성분;a third subcomponent comprising one or more of oxides and carbonates of element V;Mn, Cr, Fe, Ni, Co, Cu, 및 Zn 중 하나 이상을 포함하는 원자가 가변 억셉터 원소의, 산화물 및 탄산염으로 이루어진 군에서 선택되는 하나 이상을 포함하는 제4부성분;A fourth subcomponent comprising at least one selected from the group consisting of oxides and carbonates of variable-valence acceptor elements including one or more of Mn, Cr, Fe, Ni, Co, Cu, and Zn;Ba 및 Ca 중 하나 이상의 원소의 산화물 및 탄산염으로 이루어진 군에서 선택되는 하나 이상을 포함하는 제5부성분; 및A fifth subcomponent containing at least one selected from the group consisting of oxides and carbonates of at least one element of Ba and Ca; andYb 및 Y 중 하나 이상의 원소의 산화물 및 탄산염으로 이루어진 군에서 선택되는 하나 이상을 포함하는 제6부성분; 중 적어도 하나의 부성분을 포함하고,A sixth subcomponent containing at least one selected from the group consisting of oxides and carbonates of at least one element of Yb and Y; Contains at least one accessory ingredient of,상기 적어도 하나의 부성분은 상기 제6부성분을 더 포함하는, The at least one subcomponent further includes the sixth subcomponent,적층 세라믹 커패시터.Multilayer ceramic capacitors.
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KR20130106569A (en) * | 2012-03-20 | 2013-09-30 | 삼성전기주식회사 | Dielectric composition and multi-layered ceramic electronic component comprising the same |
KR20160073121A (en) * | 2014-12-16 | 2016-06-24 | 삼성전기주식회사 | Low temperature sintering dielectric composition and multilayer cderamic capacitor |
KR20160073243A (en) * | 2014-12-16 | 2016-06-24 | 삼성전기주식회사 | Dielectric ceramic composition, dielectric material and multilayer ceramic capacitor comprising the same |
KR20220044099A (en) * | 2020-09-30 | 2022-04-06 | 가부시키가이샤 무라타 세이사쿠쇼 | Multilayer ceramic capacitor |
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KR20130106569A (en) * | 2012-03-20 | 2013-09-30 | 삼성전기주식회사 | Dielectric composition and multi-layered ceramic electronic component comprising the same |
KR20160073121A (en) * | 2014-12-16 | 2016-06-24 | 삼성전기주식회사 | Low temperature sintering dielectric composition and multilayer cderamic capacitor |
KR20160073243A (en) * | 2014-12-16 | 2016-06-24 | 삼성전기주식회사 | Dielectric ceramic composition, dielectric material and multilayer ceramic capacitor comprising the same |
KR20220044099A (en) * | 2020-09-30 | 2022-04-06 | 가부시키가이샤 무라타 세이사쿠쇼 | Multilayer ceramic capacitor |
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