WO2024114862A1

WO2024114862A1 - Apparatus for testing electronic semiconductor components

Info

Publication number: WO2024114862A1
Application number: PCT/DE2023/100923
Authority: WO
Inventors: Uwe Beier
Original assignee: Uwe Beier
Priority date: 2022-11-29
Filing date: 2023-11-27
Publication date: 2024-06-06
Also published as: DE102022131475A1

Abstract

The invention relates to an apparatus (1) for testing an electronic semiconductor component (102a), which has a sensor layer (104) for detecting a gaseous substance and is formed on a substrate (101), using a test gas. In this case, provision is made for the apparatus (1) to have a chamber (2) enclosing an interior (3), in which reduced or excess pressure prevails and in which are arranged a holding device (4) for holding the substrate (101); and a nozzle (8) for directionally delivering the test gas onto the sensor layer (104) of the electronic semiconductor component (102a) formed on the substrate (101) held by the holding device (4).

Description

Device for testing electronic semiconductor components

[0001] The invention relates to a device for testing electronic semiconductor components. It also relates to a method for testing electronic semiconductor components.

[0002] Electronic semiconductor components that have a sensor layer for detecting a gaseous substance can be used to detect gaseous substances. If the gaseous substance contains a certain ingredient, an electrical signal is generated by the electronic semiconductor component. In addition to the sensor layer, the electronic semiconductor components have a contact surface for electrically contacting the electronic semiconductor component. These contact surfaces are also referred to as contact pads. Electronic semiconductor components of this type are used as sensors for a variety of different purposes, for example for locating leaks. They can be used in particular to analyze the chemical composition of gases. Sensors of this type are also referred to as gas sensors or chemical gas sensors.

[0003] Such electronic semiconductor components can be manufactured on the basis of semiconductor technology. Thin disks, so-called wafers, are used as base substrates and are provided with sensitive layers in a large number of process steps so that electronic semiconductor components are built up step by step. The precursors that are produced until the finished electronic semiconductor components are obtained also represent electronic semiconductor components in themselves.

[0004] The disks can be made of silicon, ceramic or glass, for example. The sensitive layers are applied in such a way that a large number of electronic semiconductor components are formed on a wafer. The electronic semiconductor components are usually small compared to the size of the wafer in the surface direction. In this way, sufficient productivity can be ensured because in each of the often complicated process steps for producing the electronic semiconductor components, several of them are processed simultaneously. Nevertheless, the individual process steps are complex and therefore costly.

[0005] It is therefore advantageous that between the individual process steps and after completion of the electronic semiconductor component, and specifically before the cost-intensive dicing, i.e. separation, and packaging, i.e. encapsulation, every preliminary stage and the finished electronic semiconductor component are checked for their functionality in order to be able to exclude the faulty electronic semiconductor component directly. Faulty electronic semiconductor components can then be rejected.

[0006] To test the precursors and the finished electronic semiconductor components, they are contacted at their contact surfaces with special needles and fully operated via downstream electronics. Depending on the type of electronic semiconductor component to be manufactured, it may be useful or necessary for these tests to be carried out in a vacuum environment. There are sufficient examples of this in the prior art.

[0007] The rapid digitalization and networking of digital components, which are described under keywords such as "Internet of Things" ("loT") and Industry 4.0, requires an increasing number of sensors in order to be able to record the current conditions in various places and react accordingly.

[0008] EP 3 486 639 B1 describes a device referred to therein as a probe, which shows the basic structure of a test device that can be used for testing electronic semiconductor components, which are not, however, gas sensors. [0009] In order to be able to test finished electronic semiconductor components that are to be used as gas sensors and their precursors on the substrate, ie before they are separated, according to the state of the art, these are brought into a test environment that is completely filled with a test gas. Since a movement of the substrate is usually necessary in order to be able to contact each electronic semiconductor component individually, such test environments require space for mechatronic movement and contact systems. The test devices in which such test environments are designed therefore require a lot of space.

[0010] If the entire test environment is now flooded with the test gas, i.e. the fluid to be detected, in the required composition, then on the one hand - compared to the size of the sensor layer of an electronic semiconductor component - large quantities of test gas are required. On the other hand - and this is the much bigger problem - this test gas naturally also reaches all surfaces present within the test environment, for example surfaces of other elements, components and materials, and is deposited there. The test gas or a component of the test gas can penetrate the element, component or material. The deposit, like penetration, can lead to changes in the properties of the elements, components and materials, but at the very least it slows down the test device considerably and often leads to drifting, i.e. to a gradual change in the initial position. If aggressive gases are used as test gases, damage to the surrounding components is also possible. It is possible to counteract this deposit and penetration using special test gas pumping technology. However, the pumping technology must be large and requires additional, long pumping times, which, however, means time and energy expenditure and thus costs and reduces the effectiveness of testing and thus the production of electronic semiconductor components.

[0011] The object of the invention is to eliminate the disadvantages of the prior art. In particular, it is intended to provide a device for testing electronic semiconductor Components are specified which require a smaller amount of test gas compared to the state of the art.

[0012] This object is achieved by the features of claims 1 and 15. Expedient embodiments of the inventions emerge from the features of the subclaims.

[0013] According to the invention, a device for testing an electronic semiconductor component, which has a sensor layer for detecting a gaseous substance and is formed on a substrate, with a test gas is provided. The device has a chamber which encloses an interior in which negative or positive pressure prevails and in which

- a holding device for holding the substrate; and

- a nozzle for the directed discharge of the test gas onto the sensor layer of the electronic semiconductor component which is formed on the substrate held by the holding device; are arranged.

[0014] The directed release of the test gas onto the sensor layer of the semiconductor component enables the use of a smaller amount of test gas. When using the device according to the invention, it is not necessary to flood the entire test environment, i.e. the entire interior of the device, with the test gas. Rather, it is sufficient that only the sensor layer comes into contact with the test gas. This is ensured according to the invention by directing a stream of the test gas onto the sensor layer of the electronic semiconductor component by means of the nozzle. The electronic semiconductor component is held on the holding device. By means of the device according to the invention, a significant increase in efficiency and measurement accuracy is achieved when testing semiconductor components that are to be used as gas sensors. In addition, an increase in flexibility is achieved. achieved when the chemical composition of the test gas is to be changed. The deposition of test gas on elements, components and/or materials of the device according to the invention and thus the drifting are reduced. The test gas reaches the sensor surface and from there into the interior of the chamber. It can then be withdrawn from the chamber via an outlet. The contact time of the test gas with elements, components and/or materials other than the substrate that carries the electronic semiconductor components is thus short. A pump can be provided, for example, to withdraw the test gas from the interior of the chamber.

[0015] The substrate can be a wafer, for example a wafer made of silicon, ceramic or glass. The electronic semiconductor component, which has a sensor layer for detecting a gaseous substance, is formed on the substrate. A large number of such electronic semiconductor components can be formed on the substrate. The substrate has a top side on which the electronic semiconductor component is formed, and a bottom side. The electronic semiconductor component has a sensor layer which is spaced from the boundaries of the electronic semiconductor component to form an area surrounding the sensor layer. The electronic semiconductor component also has contact surfaces for contacting by a contact element. The contact surfaces are preferably spaced from the boundaries of the electronic semiconductor component and the sensor layer. The contact surfaces are preferably located outside the surrounding area. They can be arranged all the way around the sensor layer.

[0016] During use of the device according to the invention for testing an electronic semiconductor component, negative pressure or positive pressure prevails in the interior. During testing, a pressure that differs from the ambient pressure should prevail in the interior. This pressure is also referred to as chamber pressure. Preferably, negative pressure prevails in the interior. For example, a negative pressure of 10' ⁵ mbar or less can prevail in the interior. The test gas should be gaseous below the chamber pressure. To guide the test gas to the nozzle one or more devices for supplying the test gas to the nozzle can be provided. The test gas can be supplied to the sensor layer of the held semiconductor component at a pressure which is referred to as the test pressure. The test pressure is preferably above the chamber pressure. It can be regulated independently of the chamber pressure.

[0017] The test gas can be produced in the nozzle itself. For this purpose, it can be provided that components of the test gas to be produced are fed separately to the nozzle. For example, the test gas in the nozzle can be produced from a first gas and a second gas. Both gases can each be fed to the nozzle by means of one or more devices for feeding a gas.

[0018] The test gas can be a mixture of several gases. The test gas can contain the gaseous substance, but this is not absolutely necessary. The gaseous substance is the substance that is to be detected by the sensor layer.

[0019] The nozzle preferably has a first nozzle opening through which the test gas can exit the nozzle. It can be provided that the nozzle is designed to deliver a sealing gas or to receive the test gas. For this purpose, the nozzle can have a second nozzle opening in addition to the first nozzle opening. The sealing gas can exit the nozzle through the second nozzle opening or the test gas can re-enter the nozzle after contact with the sensor layer. The second nozzle opening can be designed coaxially to the first nozzle opening. The second nozzle opening can be designed to run all the way around the first nozzle opening. The second nozzle opening can be separated from the first nozzle opening by a nozzle web. The nozzle can have further nozzle openings, for example a third nozzle opening. These further nozzle openings can also be designed coaxially to the first nozzle opening and the second nozzle opening. They can each be used to deliver a further gas or to receive a gas or gas mixture. The nozzle preferably has a nozzle body in which the first nozzle opening is formed. The second nozzle opening can also be formed in the nozzle body. In one embodiment, the nozzle body has at least one connection, through which the test gas can be fed into the nozzle. A gas can be fed to this connection by means of the devices for feeding a gas to the nozzle. The nozzle body can have just one connection through which the test gas is fed into the nozzle. Alternatively, the nozzle body can have exactly two connections. The first connection can be used to feed the test gas and the second connection can be unused. If the test gas in the nozzle is to be produced from a first gas and a second gas, the first connection can be used to feed the first gas and the second connection can be used to feed the second gas. The nozzle body can have a further connection through which a sealing gas can be fed into the nozzle.

[0020] The sealing gas can be supplied to the held semiconductor component at a pressure which is referred to as the sealing gas pressure. The sealing gas pressure is preferably above the chamber pressure. It can be regulated independently of the chamber pressure. The physical states of the sealing gas can differ from those of the test gas. This affects, for example, one or more of the following properties: the gas composition, the pressure, the temperature, the humidity, the flow rate, the volume flow.

[0021] The nozzle body can be a symmetrical nozzle body in terms of its external shape. However, it can be a symmetrical nozzle body overall, i.e. not only in terms of its external shape. The axis of symmetry can be its longitudinal axis. A symmetrical nozzle body can have two connections, one of which is used to supply the test gas or, if the test gas is to be produced from a first gas and a second gas in the nozzle, to supply the first gas. The second connection can be unused if the test gas is supplied via the first connection. If the test gas is to be produced from a first gas and a second gas in the nozzle, it can be used to supply the second gas. In order to enable the first gas and the second gas to be mixed to form the test gas, a nozzle insert can be formed in the nozzle body. The nozzle insert can have one or more elements for guiding the first gas and/or the second gas. [0022] The material from which the nozzle body is made can be selected from different materials. Depending on the material, the nozzle can be adapted to different test conditions, for example different test gases, test pressures and/or chamber pressures.

[0023] According to the invention, a holding device is provided for holding the substrate. The holding device is preferably designed such that the substrate rests with its underside on the holding device. For this purpose, the holding device can have a holding surface. The top side of the substrate with the electronic semiconductor component faces away from the holding surface and is therefore exposed. This also exposes the sensor layer of the electronic semiconductor component. If the substrate on which the electronic semiconductor component is arranged is held by the holding device, the electronic semiconductor component is also referred to as a held semiconductor component.

[0024] The nozzle provided according to the invention serves for the directed delivery of the first test gas onto the sensor layer of the electronic semiconductor component. In order to enable the directed delivery of the first test gas, the nozzle is preferably arranged opposite the holding device and at a distance from it. The distance between the nozzle and the holding device can preferably be designed such that a distance is formed between the nozzle and the holding device when the holding device holds the substrate. In other words, this means that the nozzle preferably does not touch the held semiconductor component or the substrate. However, in one embodiment it can be provided that the nozzle touches the held semiconductor component or the substrate, even if this is not preferred. In the event of undesired contact between the nozzle on the one hand and the held semiconductor component or the held substrate on the other hand, damage to the held substrate and/or the held semiconductor component, contamination of the held substrate and/or the held semiconductor component with material elements of the nozzle can occur. Therefore, in the In most cases, contact between the nozzle and the held semiconductor device or the held substrate must be avoided.

[0025] If the holding device holds the substrate, it can be provided that the first nozzle opening is arranged opposite the held semiconductor component. If the holding device holds the substrate and the nozzle has a second nozzle opening, it can be provided that the first nozzle opening and the second nozzle opening are arranged opposite the held semiconductor component.

[0026] The nozzle body preferably has a first end face that faces the holding device. The first nozzle opening is formed in the first end face. If the nozzle has a second nozzle opening, the second nozzle opening is preferably also formed in the first end face of the nozzle body. The distance in the vertical direction between the first end face of the nozzle body and the sensor layer of the held semiconductor component should be as small as possible. The distance in the vertical direction between the first end face of the nozzle body and the sensor layer of the held semiconductor component is preferably greater than 0 and less than 0.1 mm.

[0027] The nozzle body can have a second end face that is opposite the first end face. The channel through which the test gas is guided to the first nozzle opening can extend between the first and second end faces. A window can be formed in the second end face. The window enables the held semiconductor component to be observed. An optical device, for example a microscope, can be provided for observation. The optical device can be arranged outside the chamber. The window can be formed centrally in the second end face. The positioning of the held semiconductor component can be observed through the window, the adjoining channel and the first nozzle opening. In particular, the positioning of the held semiconductor component under the contact device and/or the nozzle can be observed. Observation is possible from above. [0028] It can be provided that the first nozzle opening is arranged in alignment with the sensor layer of the held semiconductor component. The term "aligned" refers to an axis G that is orthogonal to the first nozzle opening and to the surface side of the sensor layer that faces the first nozzle opening. Preferably, the axis G is orthogonal to the holding surface of the holding device. The first nozzle opening is then designed to be in alignment with the holding surface. Preferably, the geometric shape of the nozzle opening is adapted to the geometric shape of the electronic semiconductor component and/or to the geometric shape of the sensor layer of the electronic semiconductor component. It can be provided that the first nozzle opening has a rectangular shape. This is expedient because most electronic semiconductor components are designed to be rectangular for reasons of space utilization. In addition, the dimensions of the first nozzle opening, in a plane parallel to the surface direction of the sensor layer, can also be adapted to the dimensions of the electronic semiconductor component and/or the dimensions of the sensor layer of the electronic semiconductor component. The term “adapted” in this context is intended to express that the test gas flow is directed only at the held semiconductor component or only at its sensor layer and an area surrounding the sensor layer.

[0029] It can be provided that the second nozzle opening is formed opposite the peripheral area of the held semiconductor component. In this way, the sealing gas can be guided to the held semiconductor component. The sealing gas is preferably an inert gas, for example argon or nitrogen. The sealing gas should not contain the gaseous substance that is to be detected by means of the sensor layer. The sealing gas can have a blocking function against the penetration of ambient gas. For this purpose, it is advantageous that the test gas with a test pressure and the sealing gas with a sealing gas pressure, both of which are above the chamber pressure, flow out of the gap between the first end face of the nozzle and the held semiconductor component. The sensor layer, at which the test gas is directed, is thus shielded from the ambient gas. [0030] The semiconductor component may have a contact surface which is spaced from the sensor layer to form a spacing surface, wherein the second nozzle opening is opposite the spacing surface.

[0031] Preferably, the nozzle tapers in the direction of the holding device. It can also be provided that the nozzle has a nozzle wall whose material thickness decreases in the direction of the holding device.

[0032] The nozzle can have a nozzle body in which a first channel is formed through which the test gas flows to the first nozzle opening. The nozzle body is preferably gas-tight in order to be able to guide the test gas without leakage. A second channel can be formed in the nozzle body through which the sealing gas flows to the second nozzle opening or through which the test gas taken in via the second nozzle opening is guided away. A nozzle web can be formed in the nozzle body, which separates the first channel from the second channel.

[0033] The return of the test gas via the second nozzle opening has various advantages. The return of the test gas can enable a detailed analysis of the test gas that has flowed past the held semiconductor component. For this purpose, the device according to the invention can have a gas analyzer. The gas analyzer can be arranged in a line that is connected to the nozzle in order to suck out the test gas. In addition, the return of the test gas via the second nozzle opening also has a blocking function against the penetration of ambient gas from the interior of the chamber. In addition to the test gas, ambient gas is also sucked out through the second nozzle opening. By sucking out the test gas and ambient gas together, a pressure sink is formed compared to the test gas flowing through the gap between the nozzle and the held semiconductor component with a slightly higher pressure than the chamber pressure. By returning the test gas via the second nozzle opening, the sensor layer is thus shielded from the ambient gas. The ambient gas is the gas that is inside the chamber, apart from the test gas and, if provided, the sealing gas. as long as they have not escaped from the gap between the first end face of the nozzle and the held semiconductor component.

[0034] The device according to the invention can have a device for displaying the distance and/or for measuring the distance between the held semiconductor component, for example the sensor layer, and the nozzle. In particular, it can have a device for displaying the distance and/or for measuring the distance between the held semiconductor component, for example the sensor layer, and the first end face of the nozzle. The device can be a height indicator or a measuring device that is attached to the nozzle. The measuring device can be a test needle, for example. For example, it can be provided that the movement of the nozzle towards the held semiconductor component ends when the test needle touches a contact surface of the held semiconductor component. The structure of the test needle can correspond to the structure of a contact needle of the contact device. The measuring device can also be a sensor, for example a capacitive sensor, an inductive sensor or another sensor that is suitable for the stated purpose according to the state of the art.

[0035] The device according to the invention can further comprise a positioning device for positioning the nozzle. The nozzle can be held and moved by means of the positioning device. The nozzle can be positioned relative to the sensor layer of the held semiconductor component by means of this positioning device. The nozzle can be moved in the x, y and z directions and can be rotated about an axis lying on the z coordinate by means of this positioning device. The height positioning of the nozzle, i.e. the positioning in relation to the z coordinate, is of particular importance. Alternatively or additionally, the device according to the invention can comprise a positioning device for positioning the holding device. The holding device can be moved in the x, y and z directions by means of this positioning device and can be rotated about an axis lying on the z coordinate. The positioning device can be a manipulator. If no positioning device is provided for the nozzle, then Alternatively, the nozzle can be held by the contact device described below.

[0036] The device according to the invention can have a contact device for electrically contacting the held semiconductor component at its contact surfaces. The contact device can be a so-called probe card. The contact device can have an opening through which the nozzle is guided. Alternatively, the nozzle can be firmly connected to the contact device.

[0037] The contact device has contact needles with which it contacts contact surfaces of the held semiconductor component. It is therefore advantageous if the nozzle body has as thin a wall as possible on its first end face, which faces the held semiconductor component. For this reason, it can be provided that the nozzle body tapers towards its first end face and its material thickness is reduced for this purpose. In this way, it can be ensured that the contact needles of the contact device are left with enough space without touching them and at the same time also to enable alignment movements of the contact needles. An increase in the material thickness of the nozzle body, starting from its first end face in the direction of its opposite, second end face, is advantageous in order to achieve stabilization of the nozzle and - at a sufficient distance from the first end face - to be able to attach suitable, preferably standardized fastening elements to the support structure of the nozzle.

[0038] The nozzle can be firmly connected to the contact device, for example via one or more connecting elements. The nozzle is preferably in an adjusted position in relation to the contact device. In this way, a collision between the nozzle and a contact needle can be excluded. Alignment of the nozzle by means of a positioning device is not necessary. A separate device for holding the nozzle is also not necessary. However, the manufacture of the contact device is more complex. [0039] The nozzle can have one or more connections through which the test gas, components of the test gas or the sealing gas are fed separately into the nozzle. A line can be provided to guide the test gas, its components and the sealing gas to a connection. The connection point between a connection and a line is preferably sealed, for example with a sealing system that is suitable for use under negative pressure and/or overpressure.

[0040] The device according to the invention can have one or more devices for adjusting the chamber pressure. In particular, it can have one or more devices for generating negative pressure or positive pressure in the chamber. The device for generating negative pressure can be a pump. The pump can be arranged outside the chamber. An opening serving as an outlet can be provided in the chamber wall, from which gas located in the interior of the chamber can be drawn off via a line by means of the pump.

[0041] The device according to the invention can have one or more devices for guiding the test gas, the first gas and/or the second gas to the nozzle. For example, the test gas can be guided to the nozzle via one or more lines by means of a pump. The device according to the invention can have one or more devices for guiding the sealing gas to the nozzle. For example, the sealing gas can be guided to the nozzle via one or more lines by means of a pump. The device according to the invention can have one or more devices for removing the test gas from the nozzle. For example, the test gas can be removed from the nozzle via one or more lines by means of a pump. Such a pump can be a suction pump.

[0042] The device according to the invention enables a targeted guidance of the test gas and, if provided, the sealing gas. Only very small amounts of gas are required. For this reason, the device according to the invention enables a very rapid change of process parameters, for example the test gas flow, the chamber pressure, the test pressure, the concentration of a component of the test gas and the sealing gas flow, whereby the list is not exhaustive. The device according to the invention enables the rapid testing of a large number of electronic semiconductor components, even under different test conditions.

[0043] The first nozzle opening is designed such that the flow of test gas that exits the first nozzle opening is directed only at one of the electronic semiconductor components, namely the electronic semiconductor component that is to be tested. Electronic semiconductor components that are adjacent to the electronic semiconductor component to be tested on the substrate are not exposed to the test gas or are exposed to it only to a very small extent. This is a decisive advantage for many applications compared to the prior art, according to which all electronic semiconductor components that are formed on a substrate come into contact with the test gas within the chamber for the entire time.

[0044] The device for adjusting the chamber pressure can be used to ensure that the concentration of test gas in the interior of the chamber does not rise or fall above a predetermined level. The device for adjusting the chamber pressure can be used to suck out the test gas that exits the first nozzle opening of the nozzle and contacts the held semiconductor component. The device for adjusting the chamber pressure is preferably a pump. The test gas exiting the nozzle is immediately pumped out by the pump after it has contacted the sensor layer of the held semiconductor component. The concentration of the test gas in the entire chamber therefore does not change, so that contamination and damage to devices located in the chamber, for example to mechatronic systems such as positioning devices, are prevented. This represents a great advantage.

[0045] By means of the device according to the invention, comparative measurements and calibrations can be carried out in a simple manner using measuring devices which are known from the prior art. If there is a negative pressure in the chamber, the measuring device can be a vacuum measuring device. For example, a so-called residual gas analyzer ("RGA") can be attached to the chamber. Measurements can be carried out under different pressures. A certain pressure is referred to as a pressure stage. Different pressures can be set in a simple manner using the device according to the invention. For this purpose, the device according to the invention can have an inlet which enables the supply of a gas via an opening in the chamber wall. The gas can be, for example, an ambient gas, e.g. the ambient air, or a protective gas such as nitrogen or argon. The inlet can have one or more control devices, e.g. a valve.

[0046] According to the invention, a method is further provided for testing an electronic semiconductor component, which has a sensor layer for detecting a gaseous substance and is formed on a substrate, with a test gas by means of a device which has a chamber which encloses an interior in which negative or positive pressure prevails, comprising

- positioning a nozzle relative to the sensor layer of the electronic semiconductor component to enable a directed delivery of the test gas onto the sensor layer;

- contacting contact surfaces of the electronic semiconductor component by means of a contact device; and

- outputting a test signal to contact surfaces of the electronic semiconductor component by means of the contact device, while the test gas is released onto the sensor layer by means of the nozzle.

[0047] The method according to the invention can be carried out by means of the device according to the invention. The method according to the invention can further comprise the reception of a signal from the semiconductor component. This signal can be transmitted via Contact surfaces of the semiconductor component are received by means of the contact device. The received signal can then be compared with reference values to determine whether the semiconductor component is defective or not.

[0048] Details of the method according to the invention have already been explained in connection with the device according to the invention. Reference is made to these explanations.

[0049] The invention is explained in more detail below using embodiments which are not intended to limit the invention, with reference to the drawings.

Fig. 1 is a schematic plan view of a substrate from which a plurality of electronic semiconductor components are formed;

Fig. 2 is a schematic plan view of one of the electronic semiconductor components shown in Fig. 1;

Fig. 3 is a schematic representation of a first embodiment of a device according to the invention;

Fig. 4 is a schematic plan view of a holding device on which a substrate rests;

Fig. 5 is a schematic plan view of a held semiconductor device;

Fig. 6 is a schematic representation of a first nozzle of the first embodiment of the device according to the invention together with the substrate held by the holding device, the holding device not being shown; Fig. 6A is a schematic plan view of the nozzle from the first end face of the nozzle body;

Fig. 6B is a schematic representation of a portion of the nozzle;

Fig. 6C is a schematic representation of the first nozzle of the first embodiment of the device according to the invention together with the substrate held by the holding device, the holding device not being shown, wherein two gases are supplied to the nozzle;

Fig. 7 is a detailed view of the first embodiment of a device according to the invention;

Fig. 8 is a schematic diagram illustrating the size of the first nozzle opening;

Fig. 9 is a schematic representation of a second nozzle together with the substrate held by the holding device, the holding device not being shown;

Fig. 9A is a schematic plan view of the second nozzle from the first end face of the nozzle body;

Fig. 9B is a schematic diagram illustrating the size of the first nozzle opening and the size of the second nozzle opening;

Fig. 10 is an illustration of a second nozzle having a second nozzle opening for discharging a barrier gas;

Fig. 11 is a representation of the second nozzle, wherein the second nozzle opening serves to receive the test gas; Fig. 12 is a schematic representation of a second embodiment of a device according to the invention;

Fig. 13 A is a schematic representation of a device for determining the distance between the nozzle and the held semiconductor device, the device being shown before contact with the held semiconductor device; and

Fig. 13B is a schematic representation of the device shown in Fig. 13A for determining the distance between the nozzle and the held semiconductor device, the device being shown in contact with the held semiconductor device.

[0050] The x, y and z coordinates indicated in the figures refer to a Cartesian coordinate system. Fig. 1 shows an exemplary substrate 101, on the top side 101a of which a plurality of electronic semiconductor components 102, 102a are formed, which are separated from one another at the boundaries 103. The semiconductor components 102, 102a generally have the same structure, even if this is not absolutely necessary. The electronic semiconductor components 102, 102a have a rectangular shape, which is determined by the boundaries 103.

[0051] An exemplary electronic semiconductor component 102a arranged on the substrate 101 is shown in Fig. 2. The semiconductor component 102a has a sensor layer 104 for detecting a gaseous substance and contact surfaces 105 for electrical contact. The sensor layer 104 is formed at a distance from the boundaries 103 of the semiconductor component 102a and the contact surfaces 105. The spacer surfaces 106 are located between the sensor layer 104 and the boundaries 103. In addition, the contact surfaces 105 are formed at a distance from the boundaries. Spacer surfaces 106a are formed between the contact surfaces 105 and the sensor layer 104 and are part of the spacer surfaces 106. The sensor layer 104 is thus bordered by a peripheral region 107 which is delimited by the boundaries of the semiconductor component 102a and the contact surfaces 105 and the part of the base surfaces 106. The surrounding area 107 is shown hatched in Fig. 2. The sensor layer 104 has a rectangular shape.

[0052] The first embodiment of a device 1 according to the invention shown in Fig. 3 has a chamber 2 which surrounds an interior space 3. The chamber 2 has chamber walls, namely a base 2u, side walls 2s and a ceiling 2o. The side walls 2s are firmly connected to the base 2u. The ceiling 2o is designed as a removable cover which can be detachably attached to the side walls 2s. The contact surfaces between the side walls 2s and the cover are sealed by means of one or more sealing elements.

[0053] Negative or positive pressure can prevail in the interior 3. A holding device 4 for holding the substrate 101 is arranged in the interior 3. The holding device 4 is also referred to as a chuck. The holding device 4 has a holding surface 40 on which the substrate 101 rests with its underside 101b (see Figures 4 and 6). The exemplary semiconductor component 102a rests in a known position on the holding surface 40. A first substrate section of the substrate 101, on which the sensor layer 104 of the semiconductor component 102a is formed, rests on a first holding region 41 of the holding surface 40. Second substrate sections, on which the spacer surfaces 106 are formed, rest on second holding regions 42 of the holding surface 40. Fig. 5 shows a section of the holding surface 40 on which the semiconductor component 102a is held, the first holding region 41 and the second holding regions 42 being indicated by dashed lines. The hatched, third holding region 43, which surrounds the first holding region 41, is the region in which a third substrate section of the substrate 101, on which the peripheral region 107 of the semiconductor component 102a is located, rests on the holding surface 40. The holding device 4 is arranged on a positioning device 5, referred to as a stage, with which the holding device 4 can be moved in the x, y and z directions and can be rotated about an axis lying on the z axis. By means of the positioning device 5, the holding surface 40 of the holding device 4 can be positioned so that the longitudinal axis of the first holding region lies on the axis G. The held semiconductor component is also positioned with the holding surface so that the Longitudinal axis of the held semiconductor component lies on the axis G. The term longitudinal axis refers to the z-coordinate.

[0054] In the interior 3, a contact device 6 for electrically contacting the semiconductor component at the contact surfaces 105 is also arranged. The contact device can be a probe card. The contact device 6 is held by a holder 7. The contact device has contact needles 61 (see Fig. 7). The contact device 6 is located opposite the holding surface 40 of the holding device 4. If the substrate 101 is held by the holding device 4, the contact needles 61 can be aligned relative to the contact surfaces 105 of the semiconductor component 102 such that the contact needles 61 come into electrical contact with the contact surfaces 105. An opening 62 (see Fig. 7) is formed in the contact device 6, which - according to the prior art, as described for example in EP 3 486 639 B1 in connection with Fig. 5 therein - enables observation of the semiconductor component 102 by means of an optical device 9 that is arranged outside the chamber 2. The contact device 6 is supplied with electrical current via an electrical cable 64. In addition, signals can be sent to the contact device 6 via the cable 64 or received from there. The electrical cable 64 can be guided into the interior 3 of the chamber via a sealed feedthrough 63 in a side wall 2s.

[0055] A nozzle 8 is also arranged in the interior 3. This nozzle 8 has a nozzle body 81 and a circumferential nozzle wall 82 (see Figures 6 and 6A). The nozzle wall 82 encloses a channel 83 through which the test gas is guided to the first end face 81a of the nozzle body 81. A first nozzle opening 84 is formed on the first end face 81a through which the test gas can exit the channel 83 and thus the nozzle body 81 (arrow B). It can be seen in Figure 6 that the nozzle body 81 tapers in the direction of its first end face 81a. It can also be seen that the material thickness of the nozzle wall 82 decreases in the direction of the first end face 81a. The nozzle body 81 thus has the shape of a tip. On the second end face 81b of the nozzle body 81, which is opposite the first end face 81a, a window 85 is formed which allows observation of the held Semiconductor component 102a by means of the optical device 9. The channel 83 extends from the second end face 81b to the first end face 81a of the nozzle body 81. The nozzle body 81 of the nozzle 8 is a symmetrical nozzle body with respect to the axis G, which runs in the vertical direction (see Figures 6 and 6A). The longitudinal axis of the channel 83, the first end face 81a, the first nozzle opening 84 and the second end face 81b lie on the axis G. The term longitudinal axis refers to the z coordinate.

[0056] In addition, the nozzle 8 has a first supply channel 86 for guiding a gas into the channel 83 of the nozzle body 81 (see Figures 6 and 6C). In the first variant shown in Figure 6, the test gas is guided through the first supply channel, in the second variant shown in Figure 6C, the first gas is guided through the first supply channel 86. In the embodiment of the device 1 according to the invention shown, the nozzle 8 also has a second supply channel 87, which in the second variant can be used to guide a second gas into the channel 83 of the nozzle body 81 or, if, as in the first variant, the supply of a second gas is not provided, is unused. The first supply channel 86 ends in a region of the nozzle wall 82 that borders the second end face 81b of the nozzle body 81. The second supply channel 87 also ends in a region of the nozzle wall 82 that borders the second end face 81b of the nozzle body 81. In the second variant, the first gas and the second gas mix in the channel 83 to form the test gas. In Fig. 6C, the first gas is referred to as “gas 1,” and the second gas as “gas 2.” The test gas or the first gas is fed to the nozzle 8 via a connection 11 sealed by a seal 12 and a line 205 connected via it to the first supply channel 86. In the second variant, the second gas is fed to the nozzle 8 via a connection 14 sealed by a seal 15 and a line 16 connected via it to the first supply channel 86. However, as in the first variant, it can be provided that no second gas is supplied. In this case, the second supply channel 87 is closed at the connection 14, as shown in connection with the first variant. [0057] The two supply channels are formed in a circumferential flange 88. The flange 88 has an outer surface 88a which faces the holding surface 40 of the holding device 4. In the first embodiment of the device 1 according to the invention, the nozzle 8 is supported with the outer surface 88a on the contact device via connecting elements 10 (Fig. 7).

[0058] The nozzle body 81 extends through the opening 62 of the contact device. The first end face 81a of the nozzle body 81 and with it the first nozzle opening 84 are arranged opposite the holding surface 40 of the holding device 4. A distance D is formed between the first end face 81a of the nozzle body 81 and the holding device 4. The distance is selected such that the nozzle does not touch the holding device 4 or a semiconductor component 102 when the substrate 101 is held by the holding device 4. The distance C between the end face 81a of the nozzle body 81 and the sensor layer 104 of the held semiconductor component 102a is less than distance D. Distance C should be in a range that is greater than 0 and less than 0.1 mm. The distance D corresponds to the sum of distance C and the thickness of the held semiconductor component 102a. The distances C and D and the thickness of the held semiconductor component 102a each refer to the z-coordinate. This corresponds to the height direction.

[0059] The nozzle 8 is arranged at a distance from the holding surface 40 and, when the holding surface 40 holds a substrate 101, from the held semiconductor component 102a. For this reason, a gap 17 is formed between the first end face 81a of the nozzle body 81 and the semiconductor component 102a, through which the test gas can flow away from the sensor layer 104 (arrow H). The gap 17 forms an overflow area. The size of the gap 17 is determined by the distance C and should be as small as possible.

[0060] The first nozzle opening 84 is located opposite the sensor layer 104 of the held semiconductor component 102a and is spaced apart from it. The extension F i, F2 of the first nozzle opening in a plane parallel to the sensor layer 104 can correspond to the extension Ei, E2 of the sensor layer 104 or be larger than the The dimension Ei, E2 of the sensor layer 104 can be (see Fig. 8). The dimension of the first nozzle opening 84 is dimensioned such that, on the one hand, the test gas exiting through the nozzle opening 84 either only reaches the sensor layer 104 or only the sensor layer 104 and the surrounding area 107 and, on the other hand, that the exiting test gas completely covers the sensor layer 104. It can be seen in Fig. 8 that the geometric shape of the first nozzle opening 84 corresponds to the geometric shape of the sensor layer 104.

[0061] Fig. 8 shows the held semiconductor component 102a and the first end face 81a of the nozzle. The nozzle wall 82, which begins at the first end face 81a, is shown hatched. It can be seen that the extent Fi, F2 of the first nozzle opening 84 is larger than the extent Ei, E2 of the sensor layer 104. However, the extent Fi, F2 of the first nozzle opening is smaller than the extent of the held semiconductor component 102a. The extent Fi, F2 of the first nozzle opening corresponds to the extent Ei, E2 of the sensor layer 104 plus a peripheral region 107. The nozzle opening therefore does not extend over the contact surfaces 105. The extent Ei and the extent F 1 refer to the x coordinate. The extension E2 and the extension F2, however, refer to the y-coordinate.

[0062] If no substrate is held by the holding device 4, the first nozzle opening 84 is opposite the first holding region 41 of the holding surface 40.

[0063] Sealed openings are formed in the chamber 2, which allow the setting of the negative pressure or the positive pressure in the interior space 3. In the first embodiment of the device 1 according to the invention, a device for setting a negative pressure is provided.

[0064] The device 1 according to the invention has an inlet 18 through which ambient gas, which can be an inert gas, can be fed into the interior 3 of the chamber 2. The inlet 18 has a throttle valve 181 and a shut-off valve 182, both of which are arranged outside the chamber 2. In the A sealed opening 183 is formed in the chamber wall, through which the ambient gas from the inlet 18 can pass into the interior 3 (arrow ZL). The inlet 18 has a tube or a series of tubes. The opening 183 is formed in the bottom 2u of the chamber 2.

[0065] The device 1 according to the invention also has an outlet 19, via which a negative pressure in the interior 3 can be set and maintained. The outlet has a pump 191 and a control valve 192, both of which are arranged outside the chamber 2. A sealed opening 193 is formed in the chamber wall, through which gas can be drawn from the interior 3 into the outlet 19 by means of the pump 191 (arrow AL). The outlet 19 has a pipe or a series of pipes. The opening 193 is formed in the bottom 2u of the chamber 2.

[0066] The device 1 according to the invention also has a feed 20 for the test gas. The feed 20 has a line or a series of lines. The feed 20 has a throttle valve 201 and a shut-off valve 202, both of which are arranged outside the chamber 2. A sealed passage 203 for a line of the feed 20 is formed in the chamber wall. The first gas ("gas 1") is fed to the first supply channel 86 via a line of the feed 20. The passage 203 is formed in a side wall 2s of the chamber 2.

[0067] If a second gas (gas 2) is supplied to the nozzle, the device 1 according to the invention has a second supply, the structure of which can correspond to the supply 20 for gas 1, with the exception that gas 2 is fed to the second supply channel 87. Line 16 is part of the second supply.

[0068] The device according to the invention can have a measuring device 21. In the first embodiment of the device 1 according to the invention shown, the measuring device 21 is arranged in the interior 3 of the chamber 2. However, it can also be arranged outside the chamber 2. The measuring device 21 can be used for Determination of process parameters. For example, the measuring device 21 can be used to determine the concentration of the test gas or one of its components, the pressure in the interior 3, the flow velocity and/or the volume flow of the test gas or a component of the test gas. The measuring device 21 can be integrated into the feed 20, as shown in Fig. 3.

[0069] A door 22, which can serve as a loading door, is formed on a side wall 2s. The contact surfaces between the side wall 2s, on which the door 22 is formed, and the door 22 are sealed by means of one or more sealing elements. The door provides access to the interior 3. Windows 23 can be formed in one or more side walls 2s, wherein the contact surfaces between the side wall 2s, in which the window 23 is formed, and the window 23 are sealed by means of one or more sealing elements. In the first embodiment of the device 1 according to the invention shown in Fig. 3, only one window 23 is provided. The window or windows 23 enable the observation of the interior 3, the devices located there and the substrate 101 with the semiconductor components 102.

[0070] A central opening 24 is formed in the lid of the chamber 2 and is closed by means of an insert 25, the contact surfaces between the insert 25 and the lid being sealed by means of one or more sealing elements. The insert has a sealed window 26 through which the semiconductor component 102 can be observed by means of the optical device 9.

[0071] Figures 9 to 11 show a second nozzle 800, the arrangement and orientation of which in the interior 3 corresponds to the arrangement of the nozzle 8. The structure of the second nozzle 800 corresponds to the structure of the nozzle 8, apart from a second nozzle opening 889 and the changes to the nozzle 800 compared to the nozzle 8 associated with this nozzle opening 889. The second nozzle opening 889 and the changes associated with it are described below. [0072] The nozzle 800 has a nozzle body 881 and a circumferential nozzle wall 882 (see Fig. 9). The nozzle wall 882 encloses a first channel 883, through which the test gas is guided to the first end face 881a of the nozzle body 881, and a second channel 8831. A sealing gas is guided to the first end face 881a of the nozzle body 881 through the second channel 8831 (see Fig. 10) or the test gas is guided away from the first end face 881a (see Fig. 11). A first nozzle opening 884 is formed on the first end face 881a, through which the test gas can exit from the first channel 883 and thus from the nozzle body 881 (arrow B). A second nozzle opening 889 is also formed on the first end face 881a, through which the sealing gas can exit from the second channel 8831 and thus from the nozzle body 881 (Fig. 10) or the test gas can re-enter the nozzle body, specifically into the channel 8831 (Fig. 11). The first nozzle opening 884 and the second nozzle opening 889 are separated from one another by a nozzle web 890, which also separates the first channel 883 from the second channel 8831.

[0073] As with nozzle 8, the nozzle body 881 of the second nozzle 800 tapers towards its first end face 881a. The material thickness of the nozzle wall 882 also decreases towards the first end face 881a. The nozzle body 881 thus also has the shape of a tip. On the second end face 881b of the nozzle body 881, which is opposite the first end face 881a, a window 885 is formed which enables the held semiconductor component 102a to be observed by means of the optical device 9. The first channel 883 extends from the second end face 881b to the first end face 881a of the nozzle body 881. The nozzle body 881 of the nozzle 800 is, in terms of its external shape, a symmetrical nozzle body, relative to the axis G, which runs in the vertical direction (see Fig. 9). The longitudinal axis of the first channel 883, the first end face 881a, the first nozzle opening 884, the second nozzle opening 889 and the second end face 881b lie on the axis G. The term longitudinal axis refers to the z-coordinate.

[0074] The second nozzle opening 889 runs around the first nozzle opening, spaced apart by the nozzle web 890 (see Fig. 9A). It is formed coaxially to the first nozzle opening. The edge of the second nozzle opening 889, which is the first nozzle opening 884 is the inner edge 889i of the second nozzle opening. The edge of the second nozzle opening 889 that faces the first nozzle opening 884 is the outer edge 889a of the second nozzle opening. The geometric shape of the inner edge 889i corresponds to the geometric shape of the edge of the first nozzle opening, but the extent of the inner edge 889i along the x and y coordinates is larger, thereby forming the nozzle web 890. The geometric shape of the outer edge 889a corresponds to the geometric shape of the inner edge 889i of the second nozzle opening, but the extent of the outer edge 889a along the x and y coordinates is larger than that of the inner edge 889i.

[0075] Like nozzle 8, the second nozzle 800 has a first supply channel 886 for guiding the process gas into the first channel 883 of the nozzle body 881. The nozzle 800 also has a second supply or discharge channel 887, which in a first variant can be used to guide a second gas from the second channel 8831 of the nozzle body 881 - in which case the second supply or discharge channel 887 is a discharge channel - or which in a second variant can be used to guide the test gas into the second channel 8831 of the nozzle body 881 - in which case the second supply or discharge channel 887 is a supply channel. The first supply channel 886 ends in a region of the nozzle wall 882 that borders the second end face 881b of the nozzle body 881. The second supply or discharge channel 887 also ends in an area of the nozzle wall 882 that borders the second end face 881b of the nozzle body 881. In the first variant (Fig. 10) and in the second variant (Fig. 11), the test gas is guided to the nozzle 800 via a connection 11 sealed by means of a seal 12 and a line 205 connected via it to the first supply channel 886. In the first variant, the sealing gas is guided to the nozzle 800 via a connection 14 sealed by means of a seal 15 and a line 16 connected via it to the second supply or discharge channel 887. In the second variant, the test gas is guided out of the nozzle 800 via a connection 14 sealed by means of a seal 15 and a line 16 connected via it to the second supply or discharge channel 887. A suction pump can be provided for this purpose. [0076] The first supply channel 886 and the second supply or discharge channel 887 are formed in a circumferential flange 888. The flange 888 has an outer surface 888a which faces the holding surface 40 of the holding device 4. In the first embodiment of the device 1 according to the invention, the second nozzle 800 is supported with the outer surface 888a on the contact device via connecting elements 10, as shown in connection with the nozzle 8 in Fig. 7.

[0077] The nozzle body 881 extends through the opening 62 of the contact device. The first end face 881a of the nozzle body 881 and with it the first nozzle opening 884 and the second nozzle opening 889 are arranged opposite the holding surface 40 of the holding device 4. A distance D is formed between the first end face 881a of the nozzle body 881 and the holding device 4, as shown in connection with the nozzle 8 in Fig. 6B. The distance is selected such that the nozzle 800 does not touch the holding device 4 or a semiconductor component 102 when the substrate 101 is held by the holding device 4. The distance C between the front side 881a of the nozzle body 881 and the sensor layer 104 of the held semiconductor component 102a is less than the distance D. Distance C should also be in a range that is greater than 0 and less than 0.1 mm. The distance D corresponds to the sum of distance C and the thickness of the held semiconductor component 102a. The distances C and D as well as the thickness of the held semiconductor component 102a each relate to the z coordinate. This corresponds to the height direction.

[0078] The nozzle 800 is arranged at a distance from the holding surface 40 and, when the holding surface 40 holds a substrate 101, from the held semiconductor component 102a. For this reason, a gap 17 is formed between the first end face 881a of the nozzle body 881 and the semiconductor component 102a. The size of the gap 17 is determined by the distance C and should be as small as possible. In the first variant, the test gas - which has entered the gap 17 through the first nozzle opening (arrow B) - and the sealing gas - which has entered the gap 17 through the second nozzle opening (arrow S) - can flow out through the gap 17 (arrow H in Fig. 10). The gap 17 then forms an overflow area. In the second variant, the test gas, after it has exited the first nozzle opening 884 and has entered the gap 17 (arrow B in Fig. 11), enters the nozzle 800 again via the second nozzle opening 889 (arrow K), whereby ambient gas from the interior space 3 can also enter the nozzle 800 via the second nozzle opening 889 (arrow L).

[0079] The first nozzle opening 884 and the second nozzle opening 889 are opposite the sensor layer 104 of the held semiconductor component 102a and are spaced apart from it. Fig. 9B shows the held semiconductor component 102a and the first end face 881a of the nozzle 800. The nozzle wall 882, which begins at the first end face 881a, is shown hatched, including the nozzle web 890. It can be seen that the extent Fi, F2 of the first nozzle opening 884 is greater than the extent Ei, E2 of the sensor layer 104. The extent Ff, Fi' of the inner edge 889i of the second nozzle opening 889 is greater than the extent F 1, F2 of the first nozzle opening. However, the extent Fi, F2 of the first nozzle opening is smaller than the extent of the held semiconductor component 102a. The extent Fi, F2 of the first nozzle opening corresponds to the extent Ei, E2 of the sensor layer 104 plus a surrounding area 107. Thus, the first nozzle opening 884 and the second nozzle opening 889 do not extend over the contact surfaces 105. The extent Ei, the extent Fi and the extent Ff refer to the x-coordinate. The extent E2, the extent F2 and the extent Fi', however, refer to the y-coordinate.

[0080] The second embodiment of a device according to the invention shown in Fig. 12 corresponds to the first embodiment, except that the nozzle 8 is not attached to the contact device 6. For this reason, no connecting elements 10 are required. In the second embodiment, a positioning device 13 is provided instead, with which the nozzle 8 can be moved in the x, y and z directions and can be rotated about an axis lying on the z coordinate. By means of the positioning device 13, the nozzle 8 can be positioned such that the first end face is at a predetermined distance D from the holding surface 40 or at a predetermined distance C from the sensor layer 104 of the held semiconductor component, as shown in Fig. 8. The positioning device 13 can be attached to the side wall 2s of the chamber 2.

[0081] Figures 13A and 13B show an embodiment of a device for measuring the distance between the held semiconductor component 102A and the nozzle 8. This measuring device is attached to the nozzle 8 (not shown) and has a test needle 27 and a contact element 28. The test needle 27 is crossed with the contact element 28 (see Fig. 13A). The contact element 28 can also be needle-shaped. At the crossing point, the test needle 27 and the contact element 28 touch each other, establishing an electrical connection. The test needle 27, which is connected to the terminal 29, and the contact elements 28, which are connected to the terminal 30, belong to an electrical circuit. The test needle 27 has a tip which - with respect to the main body of the test needle - runs obliquely in the direction of the held semiconductor component 102a, for example at an angle of 45° to its main body. If the nozzle and with it the test needle 27 are moved in the direction of the held semiconductor component 102a, the tip comes into contact with a contact surface 105 which is formed for this purpose on the held semiconductor component 102a.

[0082] Fig. 13A shows the initial state. In this state, the tip of the test needle 27 does not touch the contact surface 105. The distance between the nozzle and the held semiconductor component is large. If the nozzle is now moved along the z coordinate on the axis G in the direction of the held semiconductor component 102a in order to reduce the distance, the tip of the test needle 27 comes into contact with the contact surface 105 (see Fig. 13B). As soon as the tip touches the contact surface, the contact between the test needle 27 and the contact element 28 ends at the intersection point. The slanted tip of the test needle 27 bends as soon as it touches the contact surface. In doing so, it performs a sliding movement along the x and/or z coordinate. The contact element 28 no longer touches the needle, so that the electrical connection between the test needle 27 and the contact element 28 ends. The circuit is interrupted. This interruption can be detected, for example with software. The movement of the nozzle along the z-coordinate is then stopped.

[0083] The sliding movement is clearly visible from above using the optical device 9, for example a microscope. In contrast to the previously problematic assessment of the height distance, this sideways movement is a very good indication of the achievement of contact between the test needle 27 and the held semiconductor component.

List of reference symbols

1 device

2 chamber

2o ceiling

2 s side wall

2u floor

3 Interior

4 Holding device

40 holding surface

41 first stop

42 second holding area

43 third holding area

5 Positioning device

6 Contact device

61 Contact needle

62 Opening

63 Implementation

64 electrical cable

7 Bracket

8 Nozzle

81 Nozzle body

81a first front side of the nozzle body

81b second front side of the nozzle body

82 Nozzle wall

83 Channel

84 first nozzle opening

85 windows

86 first supply channel

87 second supply channel

88 Flange

88a Outer surface optical device

10 Connecting element

11 Connection

12 Seal

13 Positioning device

14 Connection

15 Seal

16 Line

17 gap

18 Entrance

181 throttle valve

182 Shut-off valve

183 Opening

19 Outlet

191 Pump

192 Control valve

193 Opening

20 Feeding

201 throttle valve

202 Shut-off valve

203 Implementation

205 Line

21 Measuring device

22 Door

23 windows

24 Opening

25 Use

26 windows

27 Test needle

28 Contact element

29 Connection 30 Connection

800 second nozzle

881 Nozzle body

881a first front side of the nozzle body

881b second front side of the nozzle body

882 Nozzle wall

883 first channel

8831 second channel

884 first nozzle opening

885 windows

886 first supply channel

887 second supply or drainage channel

888 Flange

888a Exterior surface

889 second nozzle opening

889i inner edge

889a Outer edge

890 Nozzle bridge

101 Substrat

101a Top of the substrate

101b Bottom of the substrate

102 Semiconductor component

102a exemplary semiconductor device

103 Limit of a semiconductor device

104 Sensor layer

105 Contact surface

106 Distance area

106a Distance area

107 surrounding area

Claims

Patent claims

1. Device (1) for testing an electronic semiconductor component (102a) which has a sensor layer (104) for detecting a gaseous substance and is formed on a substrate (101), with a test gas, wherein the device (1) has a chamber (2) which encloses an interior space (3) in which negative or positive pressure prevails and in which

- a holding device (4) for holding the substrate (101); and

- a nozzle (8, 800) for the directed discharge of the test gas onto the sensor layer (104) of the electronic semiconductor component (102a) which is formed on the substrate (101) held by the holding device (4); are arranged.

2. Device according to claim 1, characterized in that the nozzle (800) is designed to emit a sealing gas or to receive the test gas.

3. Device according to claim 1 or claim 2, characterized in that the nozzle (8, 800) has a nozzle body (81, 881) with a first nozzle opening (84, 884), wherein the first nozzle opening (84, 884) is arranged opposite the sensor layer (104).

4. Device according to claim 3, characterized in that the first nozzle opening (84, 884) is arranged in alignment with the sensor layer (104).

5. Device according to claim 3 or claim 4, characterized in that the nozzle body (81, 881) has a first end face (81a, 881a) in which the first nozzle opening (84, 884) is formed, wherein the distance (C) of the first end face (81a, 881a) of the nozzle body (81, 881) from the sensor layer (104) of the electronic semiconductor component (102a) is greater than 0 and smaller than 0.1 mm. Device according to claim 5, characterized in that the nozzle body (81, 881) has a channel (83, 883) which extends to the first end face (81a, 881a) in which the first nozzle opening (84, 884) is formed. Device according to one of claims 2 to 6, characterized in that the nozzle (800) has a second nozzle opening (889) for emitting the sealing gas or for receiving the test gas, the second nozzle opening (889) being formed in the nozzle body (881) of the nozzle. Device according to claim 7, characterized in that the nozzle opening (889) is formed to run around the first nozzle opening (884) to form a nozzle web (890). Device according to claim 7 or claim 8, characterized in that the electronic semiconductor component (102a) has a contact surface (105) which is spaced from the sensor layer (104) to form a spacing surface (106a), the second nozzle opening being opposite the spacing surface (106a). Device according to one of the preceding claims, characterized in that the nozzle (8, 800) tapers in the direction of the holding device (4). Device according to one of the preceding claims, characterized in that the nozzle (8, 800) has a nozzle wall (82, 882) whose material thickness decreases in the direction of the holding device (4).

12. Device according to one of the preceding claims, characterized in that it comprises a device for displaying the distance and/or for measuring the distance (C) between the sensor layer (104) and the nozzle (8).

13. Device according to one of the preceding claims, characterized in that it comprises a positioning device (13) for positioning the nozzle (8).

14. Device according to one of claims 1 to 13, characterized in that it has a contact device (6) for electrically contacting the semiconductor component (102a) at the contact surface (105), wherein the nozzle (8, 800) is connected to the contact device (6).

15. Method for testing an electronic semiconductor component (102a) which has a sensor layer (104) for detecting a gaseous substance and is formed on a substrate (101), with a test gas by means of a device (1) which has a chamber (2) which encloses an interior space (3) in which negative or positive pressure prevails, comprising

- positioning a nozzle (8, 800) relative to the sensor layer (104) of the electronic semiconductor component (102a) to enable a directed delivery of the test gas onto the sensor layer (104);

- contacting contact surfaces (105) of the electronic semiconductor component (102a) by means of a contact device (6); and

- outputting a test signal to contact surfaces (105) of the electronic semiconductor component (102a) by means of the contact device (6), while the test gas is delivered to the sensor layer (104) by means of a nozzle (8, 800).