WO2024106573A1 - Display device and method for manufacturing display device - Google Patents

Abstract

According to embodiments, provided is a display device comprising: a circuit board; a plurality of light-emitting elements formed on the circuit board; one or more barriers formed on at least one portion between the plurality of light-emitting elements; and a coating layer encompassing the one or more barriers.

Description

Display device and method of manufacturing the display device

Embodiments relate to a display device and a method of manufacturing the display device. For example, embodiments apply to a display device including a partition structure and a method of manufacturing the display device.

In the field of display technology, display devices with excellent characteristics such as thinness and flexibility are being developed. In contrast, currently commercialized major displays are represented by LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diodes).

Meanwhile, Light Emitting Diode (LED) is a semiconductor light-emitting device well known for converting current into light. Starting with the commercialization of red LED using GaAsP compound semiconductor in 1962, it has been followed by green LED of GaP:N series. It has been used as a light source for display images in electronic devices, including information and communication devices. Accordingly, a method of solving the above-mentioned problems can be proposed by implementing a display using the semiconductor light-emitting device. The semiconductor light emitting device has various advantages over filament-based light emitting devices, such as long lifespan, low power consumption, excellent initial driving characteristics, and high vibration resistance.

At this time, the display device stacks a phosphor layer on the light emitting diode, for example. Light emitted from the light emitting diode is excited by the phosphor layer. At this time, the display device provides a partition between the light emitting diodes to prevent color mixing between light emitted from the phosphor layer. The partition blocks the light excited by the phosphor layer from mixing with each other, improving color purity.

At this time, if the partition wall forms a side slope, the effect of improving color purity is greater. However, it is difficult to form a large side slope through movement of the materials included in the partition. Therefore, the display device has a problem in that it is difficult to effectively improve color purity through the partition.

Embodiments describe a display device and a method of manufacturing the display device that solve the above-described problems.

Embodiments aim to form a slope on the side of the partition.

Embodiments aim to form partition walls through various materials.

The technical challenges to be achieved in the embodiments are not limited to the matters mentioned above, and other technical challenges not mentioned may be considered by those skilled in the art from the various embodiments described below. You can.

According to embodiments, a wiring board; A plurality of light emitting devices formed on a wiring board; One or more partition walls formed between at least some of the plurality of light emitting devices; and a coating layer surrounding one or more partition walls; A display device including a is provided.

According to embodiments, a display device is provided in which the coating layer forms an inclination from the top of the partition toward the light emitting element.

According to embodiments, a display device is provided in which the coating layer is formed concavely with an inclination toward the upper surface.

According to embodiments, the slope includes a first slope close to the top of the partition, a second slope close to the light emitting element, and a third slope located between the first slope and the second slope, the first slope being the third slope. A display device is provided, wherein the tilt is greater than the tilt, and the third tilt is greater than the second tilt.

According to embodiments, a display device is provided in which the second tilt is formed in a range of 15 degrees to 80 degrees.

According to embodiments, a display device is provided wherein the coating layer includes a lower portion on a side facing the light emitting device, and the height of the lower portion is lower than the height of the light emitting device.

According to embodiments, the partition wall provides a display device in which the upper part of the partition wall is formed to be wider than the lower part of the partition wall.

According to embodiments, a display device includes a metal layer formed on a coating layer; A display device is provided, further comprising:

According to embodiments, a display device is provided wherein at least one of the partition wall and the coating layer includes a white material.

According to embodiments, a display device is provided in which the partition wall includes a plurality of pores, and a coating layer is formed on at least a portion of the pores.

According to embodiments, a display device is provided in which the partition wall is formed by a plurality of rods arranged to be offset from each other.

According to embodiments, a phosphor layer is formed on the light emitting device and converts the color of light emitted from the light emitting device; A display device including a is provided.

According to embodiments, a display device includes a color filter formed on a light-emitting device and converting the color of light emitted from the light-emitting device; A display device including a is provided.

According to embodiments, a display device is provided where the light emitting element is a micro LED having a micro size.

According to embodiments, forming one or more partition walls between the plurality of light emitting devices on a wiring board on which the plurality of light emitting devices are spaced apart; And forming a coating layer surrounding one or more partition walls; Provides a method of manufacturing a display device including.

Embodiments may provide a display device with improved color purity.

Embodiments can reduce production costs when manufacturing COW (Chip On the Wafer).

Embodiments allow for a variety of barrier materials.

Embodiments may provide a display device in which the phosphor filling space is maximized.

Embodiments may provide a display device with improved light efficiency.

The effects that can be obtained from the examples are not limited to the effects mentioned above, and other effects not mentioned can be clearly derived and understood by those skilled in the art based on the detailed description below. It can be.

The accompanying drawings, which are included as part of the detailed description to aid understanding of the embodiments, provide various embodiments and together with the detailed description describe technical features of the various embodiments.

1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light-emitting device of the present invention.

Figure 2 is a partial enlarged view of part A of Figure 1.

FIGS. 3A and 3B are cross-sectional views taken along lines B-B and C-C of FIG. 2.

FIG. 4 is a conceptual diagram showing the flip chip type semiconductor light emitting device of FIG. 3.

5A to 5C are conceptual diagrams showing various forms of implementing color in relation to a flip chip type semiconductor light emitting device.

Figure 6 is a cross-sectional view showing a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

Figure 7 is a perspective view showing another embodiment of a display device using the semiconductor light-emitting device of the present invention.

Figure 8 is a cross-sectional view taken along line D-D in Figure 7.

FIG. 9 is a conceptual diagram showing the vertical semiconductor light emitting device of FIG. 8.

Figure 10 schematically shows a cross-sectional view of a display device according to embodiments.

Figure 11 is a diagram explaining the slope of the coating layer according to embodiments.

Figure 12 is a diagram explaining the height of a coating layer according to embodiments.

Figure 13 is a diagram explaining the degree of slope depending on the viscosity of the coating layer according to embodiments.

14 is a diagram illustrating various examples of partition walls and/or coating layers according to embodiments.

FIG. 15 is a diagram illustrating various examples of partition walls and/or coating layers according to embodiments.

Figure 16 schematically shows a cross-sectional view of a display device according to embodiments.

Figure 17 shows a flowchart of a method for controlling a display device according to embodiments.

Hereinafter, embodiments disclosed in the present specification will be described in detail with reference to the attached drawings. However, identical or similar components will be assigned the same reference numbers regardless of reference numerals, and duplicate descriptions thereof will be omitted. The suffixes “module” and “part” for components used in the following description are given or used interchangeably only for the ease of preparing the specification, and do not have distinct meanings or roles in themselves. Additionally, in describing the embodiments disclosed in this specification, if it is determined that detailed descriptions of related known technologies may obscure the gist of the embodiments disclosed in this specification, the detailed descriptions will be omitted. In addition, it should be noted that the attached drawings are only for easy understanding of the embodiments disclosed in this specification, and should not be construed as limiting the technical idea disclosed in this specification by the attached drawings.

Furthermore, although each drawing is described for convenience of explanation, it is within the scope of the present invention for a person skilled in the art to implement another embodiment by combining at least two or more drawings.

Additionally, when an element such as a layer, region or substrate is referred to as being “on” another component, it is to be understood that it may be present directly on the other element or that there may be intermediate elements in between. There will be.

The display device described in this specification is a concept that includes all display devices that display information using a unit pixel or a set of unit pixels. Therefore, it is not limited to finished products but can also be applied to parts. For example, a panel corresponding to a part of a digital TV also independently corresponds to a display device in this specification. Finished products include mobile phones, smart phones, laptop computers, digital broadcasting terminals, PDAs (personal digital assistants), PMPs (portable multimedia players), navigation, Slate PCs, Tablet PCs, and Ultra This may include books, digital TVs, desktop computers, etc.

However, those skilled in the art will easily understand that the configuration according to the embodiment described in this specification can be applied to a device capable of displaying, even if it is a new product type that is developed in the future.

In addition, the semiconductor light emitting devices mentioned in this specification include LEDs, micro LEDs, etc., and may be used interchangeably.

1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light-emitting device of the present invention.

As shown in FIG. 1, information processed by the control unit (not shown) of the display device 100 may be displayed using a flexible display.

Flexible displays include, for example, displays that can be bent, bent, twisted, folded, or rolled by an external force.

Furthermore, a flexible display can be, for example, a display manufactured on a thin, flexible substrate that can be bent, bent, folded, or rolled like paper, while maintaining the display characteristics of a conventional flat panel display.

When the flexible display is not bent (for example, a state with an infinite radius of curvature, hereinafter referred to as the first state), the display area of the flexible display becomes flat. In the first state, when the display area is bent by an external force (for example, a state with a finite radius of curvature, hereinafter referred to as the second state), the display area may become a curved surface. As shown in FIG. 1, information displayed in the second state may be visual information output on a curved surface. This visual information is implemented by independently controlling the light emission of unit pixels (sub-pixels) arranged in a matrix form. The unit pixel means, for example, the minimum unit for implementing one color.

A unit pixel of the flexible display may be implemented by a semiconductor light-emitting device. In the present invention, a light emitting diode (LED) is exemplified as a type of semiconductor light emitting device that converts current into light. The light emitting diode is formed in a small size, and through this, it can function as a unit pixel even in the second state.

The flexible display implemented using the light emitting diode will be described in more detail with reference to the drawings below.

Figure 2 is a partial enlarged view of part A of Figure 1.

FIGS. 3A and 3B are cross-sectional views taken along lines B-B and C-C of FIG. 2.

FIG. 4 is a conceptual diagram showing the flip chip type semiconductor light emitting device of FIG. 3.

5A to 5C are conceptual diagrams showing various forms of implementing color in relation to a flip chip type semiconductor light emitting device.

As shown in FIGS. 2, 3A, and 3B, a display device 100 using a passive matrix (PM) type semiconductor light emitting device is exemplified. However, the examples described below are also applicable to active matrix (AM) type semiconductor light emitting devices.

The display device 100 shown in FIG. 1 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and at least one semiconductor light emitting device, as shown in FIG. 2. Includes (150).

The substrate 110 may be a flexible substrate. For example, in order to implement a flexible display device, the substrate 110 may include glass or polyimide (PI). In addition, any material that has insulating properties and is flexible, such as PEN (Polyethylene Naphthalate) or PET (Polyethylene Terephthalate), can be used. Additionally, the substrate 110 may be made of either a transparent or opaque material.

The substrate 110 may be a wiring board on which the first electrode 120 is disposed, and thus the first electrode 120 may be located on the substrate 110.

As shown in FIG. 3A, the insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located, and the auxiliary electrode 170 may be located in the insulating layer 160. In this case, the insulating layer 160 is stacked on the substrate 110 to form a single wiring board. More specifically, the insulating layer 160 is made of an insulating and flexible material such as polyimide (PI), PET, or PEN, and can be integrated with the substrate 110 to form one substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150, and is located on the insulating layer 160 and disposed to correspond to the position of the first electrode 120. For example, the auxiliary electrode 170 has a dot shape and may be electrically connected to the first electrode 120 through the electrode hole 171 penetrating the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

As shown in Figure 2 or Figure 3a, a conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not necessarily limited thereto. For example, a structure in which a layer performing a specific function is formed between the insulating layer 160 and the conductive adhesive layer 130, or in which the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160. It is also possible. In a structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may function as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity. For this purpose, a conductive material and an adhesive material may be mixed in the conductive adhesive layer 130. Additionally, the conductive adhesive layer 130 is flexible, thereby enabling a flexible function in the display device.

As such an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, etc. The conductive adhesive layer 130 may be configured as a layer that allows electrical interconnection in the Z direction penetrating the thickness, but has electrical insulation in the horizontal X-Y direction. Therefore, the conductive adhesive layer 130 may be called a Z-axis conductive layer (however, hereinafter referred to as 'conductive adhesive layer').

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member, and when heat and pressure are applied, only a specific portion becomes conductive due to the anisotropic conductive medium. Hereinafter, it will be explained that heat and pressure are applied to the anisotropic conductive film, but other methods may be applied to make the anisotropic conductive film partially conductive. Other methods described above can be, for example, applying only one of the heat and pressure, UV curing, etc.

Additionally, the anisotropic conductive medium may be, for example, conductive balls or conductive particles. For example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member, and when heat and pressure are applied, only specific portions become conductive due to the conductive balls. An anisotropic conductive film may contain a plurality of particles in which the core of a conductive material is covered by an insulating film made of polymer. In this case, the area where heat and pressure are applied becomes conductive due to the destruction of the insulating film and the core. . At this time, the shape of the core can be modified to form layers that contact each other in the thickness direction of the film. As a more specific example, heat and pressure are applied entirely to the anisotropic conductive film, and an electrical connection in the Z-axis direction is partially formed due to a height difference between the objects adhered by the anisotropic conductive film.

As another example, an anisotropic conductive film may contain a plurality of particles coated with a conductive material in an insulating core. In this case, the conductive material is deformed (pressed) in the area where heat and pressure are applied and becomes conductive in the direction of the thickness of the film. As another example, it is possible for the conductive material to penetrate the insulating base member in the Z-axis direction and be conductive in the thickness direction of the film. In this case, the conductive material may have a pointed end.

The anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which a conductive ball is inserted into one surface of an insulating base member. More specifically, the insulating base member is made of an adhesive material, and the conductive balls are concentrated on the bottom of the insulating base member, and are deformed together with the conductive balls when heat and pressure are applied to the base member. It becomes conductive in the vertical direction.

However, the present invention is not necessarily limited to this, and the anisotropic conductive film has a form in which conductive balls are randomly mixed into an insulating base member, or a form in which conductive balls are arranged in one layer (double-layer) consisting of a plurality of layers. ACF), etc. are all possible.

Anisotropic conductive paste is a combination of paste and conductive balls, and can be a paste in which conductive balls are mixed with an insulating and adhesive base material. Additionally, the solution containing conductive particles may be a solution containing conductive particles or nanoparticles.

Referring again to FIG. 3A, the second electrode 140 is located in the insulating layer 160 and spaced apart from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are located.

After forming the conductive adhesive layer 130 with the auxiliary electrode 170 and the second electrode 140 positioned on the insulating layer 160, the semiconductor light emitting device 150 is connected in a flip chip form by applying heat and pressure. When enabled, the semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type electrode 156, a p-type semiconductor layer 155 on which the p-type electrode 156 is formed, an active layer 154 formed on the p-type semiconductor layer 155, and an active layer ( 154) includes an n-type semiconductor layer 153 formed on the n-type semiconductor layer 153 and an n-type electrode 152 disposed horizontally spaced apart from the p-type electrode 156 on the n-type semiconductor layer 153. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 and the conductive adhesive layer 130 shown in FIG. 3, and the n-type electrode 152 may be electrically connected to the second electrode 140. It can be connected to .

Referring again to FIGS. 2, 3A, and 3B, the auxiliary electrode 170 is formed long in one direction, so that one auxiliary electrode can be electrically connected to a plurality of semiconductor light emitting devices 150. For example, p-type electrodes of semiconductor light emitting devices on the left and right around the auxiliary electrode may be electrically connected to one auxiliary electrode.

More specifically, the semiconductor light-emitting device 150 is press-fitted into the conductive adhesive layer 130 by heat and pressure, and the portion between the p-type electrode 156 and the auxiliary electrode 170 of the semiconductor light-emitting device 150 is formed through this. And, only the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity, and the remaining portion does not have conductivity due to the absence of press fit of the semiconductor light emitting device. In this way, the conductive adhesive layer 130 not only bonds the semiconductor light-emitting device 150 and the auxiliary electrode 170 and the semiconductor light-emitting device 150 and the second electrode 140 to each other, but also forms an electrical connection.

Additionally, the plurality of semiconductor light emitting devices 150 constitute a light emitting device array, and a phosphor layer 180 is formed in the light emitting device array.

The light emitting device array may include a plurality of semiconductor light emitting devices having different luminance values. Each semiconductor light emitting device 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, there may be a plurality of first electrodes 120, the semiconductor light emitting devices may be arranged in, for example, several rows, and the semiconductor light emitting devices in each row may be electrically connected to one of the plurality of first electrodes.

Additionally, since the semiconductor light emitting devices are connected in a flip chip form, semiconductor light emitting devices grown on a transparent dielectric substrate can be used. Additionally, the semiconductor light emitting devices may be, for example, nitride semiconductor light emitting devices. Since the semiconductor light emitting device 150 has excellent luminance, an individual unit pixel can be formed even in a small size.

As shown in FIG. 3, a partition wall 190 may be formed between the semiconductor light emitting devices 150. In this case, the partition wall 190 may serve to separate individual unit pixels from each other and may be formed integrally with the conductive adhesive layer 130. For example, when the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, the base member of the anisotropic conductive film may form the partition wall.

Additionally, if the base member of the anisotropic conductive film is black, the partition 190 can have reflective characteristics and increase contrast even without a separate black insulator.

As another example, a reflective partition may be separately provided as the partition wall 190. In this case, the partition wall 190 may include a black or white insulator depending on the purpose of the display device. When using a partition made of white insulator, it can have the effect of increasing reflectivity, and when using a partition made of black insulator, it can have reflective characteristics and increase contrast at the same time.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 functions to convert the blue (B) light into the color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, at a position forming a red unit pixel, a red phosphor 181 capable of converting blue light into red (R) light can be stacked on the blue semiconductor light emitting device, and at a position forming a green unit pixel, a blue phosphor 181 can be stacked on the blue semiconductor light emitting device. A green phosphor 182 capable of converting blue light into green (G) light may be stacked on the semiconductor light emitting device. Additionally, only a blue semiconductor light emitting device can be used alone in the portion forming the blue unit pixel. In this case, red (R), green (G), and blue (B) unit pixels may form one pixel. More specifically, phosphors of one color may be stacked along each line of the first electrode 120. Accordingly, one line in the first electrode 120 can be an electrode that controls one color. That is, red (R), green (G), and blue (B) can be arranged in order along the second electrode 140, and through this, a unit pixel can be implemented.

However, the present invention is not necessarily limited to this, and unit pixels of red (R), green (G), and blue (B) can be implemented by combining the semiconductor light emitting device 150 and quantum dots (QD) instead of the phosphor. there is.

Additionally, a black matrix 191 may be disposed between each phosphor layer to improve contrast. In other words, this black matrix 191 can improve contrast between light and dark.

However, the present invention is not necessarily limited to this, and other structures for implementing blue, red, and green colors may be applied.

Referring to FIG. 5A, each semiconductor light emitting device 150 is made of gallium nitride (GaN) as the main material, and indium (In) and/or aluminum (Al) are added together to form a high-output device that emits various lights, including blue. It can be implemented as a light emitting device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a unit pixel (sub-pixel). For example, red, green, and blue semiconductor light emitting devices (R, G, B) are arranged alternately, and unit pixels of red, green, and blue are generated by the red, green, and blue semiconductor light emitting devices. They form one pixel, and through this, a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device 150a may include a white light emitting device (W) in which a yellow phosphor layer is provided for each individual device. In this case, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting device (W) to form a unit pixel. Additionally, a unit pixel can be formed on the white light emitting device (W) using a color filter that repeats red, green, and blue.

Referring to FIG. 5C, a structure in which a red phosphor layer 184, a green phosphor layer 185, and a blue phosphor layer 186 are provided on the ultraviolet light emitting device 150b is also possible. In this way, semiconductor light-emitting devices can be used in all areas, not only visible light but also ultraviolet (UV) light, and can be expanded to the form of a semiconductor light-emitting device in which ultraviolet light (UV) can be used as an excitation source for the upper phosphor. .

Looking again at this example, the semiconductor light emitting device is located on the conductive adhesive layer and constitutes a unit pixel in the display device. Since semiconductor light-emitting devices have excellent luminance, individual unit pixels can be formed even in small sizes.

For example, the size of such an individual semiconductor light emitting device 150 may have a side length of 80 μm or less and may be a rectangular or square device. In the case of a rectangular shape, the size may be less than 20

In addition, even if a square semiconductor light emitting device 150 with a side length of 10 μm is used as a unit pixel, sufficient brightness to form a display device appears.

Therefore, taking as an example the case where the unit pixel size is a rectangular pixel with one side of 600 μm and the other side of 300 μm, the distance between the semiconductor light emitting devices becomes relatively large enough.

Therefore, in this case, it is possible to implement a flexible display device with high definition quality, HD quality or higher.

A display device using the semiconductor light emitting device described above can be manufactured using a new type of manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG. 6.

Figure 6 is a cross-sectional view showing a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

As shown in FIG. 6, first, a conductive adhesive layer 130 is formed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are located. An insulating layer 160 is laminated on the wiring board 110, and a first electrode 120, an auxiliary electrode 170, and a second electrode 140 are disposed on the wiring board 110. In this case, the first electrode 120 and the second electrode 140 may be arranged in directions orthogonal to each other. Additionally, in order to implement a flexible display device, the wiring board 110 and the insulating layer 160 may each include glass or polyimide (PI).

The conductive adhesive layer 130 may be implemented by, for example, an anisotropic conductive film. For this purpose, the anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is located.

Next, a temporary substrate 112 corresponding to the position of the auxiliary electrode 170 and the second electrode 140 and on which a plurality of semiconductor light-emitting devices 150 constituting individual pixels are located is placed, and the semiconductor light-emitting devices 150 ) is arranged to face the auxiliary electrode 170 and the second electrode 140.

In this case, the temporary substrate 112 is a growth substrate for growing the semiconductor light emitting device 150, and may be a sapphire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in a wafer unit, it can be effectively used in a display device by having a gap and size that can form a display device.

Next, the wiring board and the temporary board 112 are heat-compressed. For example, the wiring board and the temporary board 112 can be heat-compressed using an ACF press head. The wiring board and the temporary board 112 are bonded by the thermal compression. Due to the characteristics of the anisotropic conductive film that becomes conductive by heat compression, only the portion between the semiconductor light-emitting device 150 and the auxiliary electrode 170 and the second electrode 140 becomes conductive, and through this, the electrodes and the semiconductor light emitte. Element 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and a partition wall can be formed between the semiconductor light emitting devices 150 through this.

Next, the temporary substrate 112 is removed. For example, the temporary substrate 112 can be removed using a laser lift-off (LLO) method or a chemical lift-off (CLO) method.

Finally, the temporary substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating the wiring board to which the semiconductor light emitting device 150 is coupled with silicon oxide (SiOx).

Additionally, the step of forming a phosphor layer on one side of the semiconductor light emitting device 150 may be further included. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or green phosphor for converting the blue (B) light into the color of a unit pixel emits the blue semiconductor light. A layer can be formed on one side of the device.

The manufacturing method or structure of a display device using a semiconductor light emitting device described above can be modified into various forms. As an example, a vertical semiconductor light emitting device may also be applied to the display device described above.

In addition, in the modified examples or embodiments described below, the same or similar reference numbers are assigned to the same or similar components as the previous example, and the description is replaced with the first description.

Figure 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, Figure 8 is a cross-sectional view taken along line D-D of Figure 7, and Figure 9 shows the vertical semiconductor light emitting device of Figure 8. It is a concept diagram.

Referring to these drawings, the display device may be a display device using a passive matrix (PM) type vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and at least one semiconductor light emitting device 250.

The substrate 210 is a wiring board on which the first electrode 220 is disposed, and may include polyimide (PI) to implement a flexible display device. In addition, any material that is insulating and flexible can be used.

The first electrode 220 is located on the substrate 210 and may be formed as a bar-shaped electrode that is long in one direction. The first electrode 220 may be configured to function as a data electrode.

The conductive adhesive layer 230 is formed on the substrate 210 where the first electrode 220 is located. Like a display device with a flip chip type light emitting device, the conductive adhesive layer 230 is a solution containing an anisotropic conductive film (ACF), an anisotropic conductive paste, and conductive particles. ), etc. However, this embodiment also illustrates a case where the conductive adhesive layer 230 is implemented by an anisotropic conductive film.

After placing the anisotropic conductive film with the first electrode 220 positioned on the substrate 210 and connecting the semiconductor light emitting device 250 by applying heat and pressure, the semiconductor light emitting device 250 is connected to the first electrode 220. It is electrically connected to the electrode 220. At this time, the semiconductor light emitting device 250 is preferably disposed on the first electrode 220.

As described above, the electrical connection is created because the anisotropic conductive film becomes partially conductive in the thickness direction when heat and pressure are applied. Therefore, the anisotropic conductive film is divided into a conductive part and a non-conductive part in the thickness direction.

Additionally, because the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 implements not only electrical connection but also mechanical coupling between the semiconductor light emitting device 250 and the first electrode 220.

In this way, the semiconductor light emitting device 250 is located on the conductive adhesive layer 230 and constitutes an individual pixel in the display device. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be formed even in small sizes. For example, the size of such an individual semiconductor light emitting device 250 may have a side length of 80 μm or less and may be a rectangular or square device. In the case of a rectangular shape, the size may be, for example, 20

The semiconductor light emitting device 250 may have a vertical structure.

Between the vertical semiconductor light emitting devices, a plurality of second electrodes 240 are disposed in a direction crossing the longitudinal direction of the first electrode 220 and are electrically connected to the vertical semiconductor light emitting devices 250.

Referring to FIG. 9, this vertical semiconductor light emitting device 250 includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, and a p-type semiconductor layer 255. It includes an active layer 254, an n-type semiconductor layer 253 formed on the active layer 254, and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected to the first electrode 220 and the conductive adhesive layer 230, and the n-type electrode 252 located at the top may be connected to the second electrode 240, which will be described later. ) can be electrically connected to. This vertical semiconductor light emitting device 250 has a great advantage in that it can reduce the chip size because electrodes can be arranged up and down.

Referring again to FIG. 8, a phosphor layer 280 may be formed on one surface of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and is provided with a phosphor layer 280 to convert this blue (B) light into the color of a unit pixel. It can be. In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, at a position forming a red unit pixel, a red phosphor 281 capable of converting blue light into red (R) light can be stacked on the blue semiconductor light emitting device, and at a position forming a green unit pixel, a blue phosphor 281 can be stacked on the blue semiconductor light emitting device. A green phosphor 282 capable of converting blue light into green (G) light may be stacked on the semiconductor light emitting device. Additionally, only a blue semiconductor light emitting device can be used alone in the portion forming the blue unit pixel. In this case, red (R), green (G), and blue (B) unit pixels may form one pixel.

However, the present invention is not necessarily limited to this, and as described above, in a display device using a flip chip type light emitting device, other structures for implementing blue, red, and green colors may be applied.

Looking at this embodiment again, the second electrode 240 is located between the semiconductor light emitting devices 250 and is electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be arranged in a plurality of rows, and the second electrode 240 may be located between the rows of the semiconductor light emitting devices 250.

Since the distance between the semiconductor light emitting devices 250 forming individual pixels is sufficiently large, the second electrode 240 can be positioned between the semiconductor light emitting devices 250.

The second electrode 240 may be formed as a long bar-shaped electrode in one direction and may be arranged in a direction perpendicular to the first electrode.

Additionally, the second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a portion of the ohmic electrode by printing or deposition. Through this, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 can be electrically connected.

Referring again to FIG. 8, the second electrode 240 may be positioned on the conductive adhesive layer 230. In some cases, a transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is placed after the transparent insulating layer is formed, the second electrode 240 is located on the transparent insulating layer. Additionally, the second electrode 240 may be formed to be spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used to place the second electrode 240 on the semiconductor light emitting device 250, the ITO material has a problem of poor adhesion to the n-type semiconductor layer. there is. Therefore, the present invention has the advantage of not having to use a transparent electrode such as ITO by placing the second electrode 240 between the semiconductor light emitting devices 250. Therefore, light extraction efficiency can be improved by using a conductive material with good adhesion to the n-type semiconductor layer as a horizontal electrode without being restricted by the selection of a transparent material.

Referring again to FIG. 8, a partition 290 may be located between the semiconductor light emitting devices 250. That is, a partition 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 forming individual pixels. In this case, the partition wall 290 may serve to separate individual unit pixels from each other, and may be formed integrally with the conductive adhesive layer 230. For example, the base member of the anisotropic conductive film may form the partition wall by inserting the semiconductor light emitting device 250 into the anisotropic conductive film.

Additionally, if the base member of the anisotropic conductive film is black, the partition 290 can have reflective characteristics and increase contrast even without a separate black insulator.

As another example, a reflective partition may be separately provided as the partition wall 190. The partition 290 may include a black or white insulator depending on the purpose of the display device.

If the second electrode 240 is located directly on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the partition wall 290 is located between the vertical semiconductor light emitting devices 250 and the second electrode 240. It can be located in between. Therefore, an individual unit pixel can be formed even in a small size using the semiconductor light-emitting device 250, and the distance between the semiconductor light-emitting devices 250 is relatively large enough to connect the second electrode 240 to the semiconductor light-emitting device 250. ), and has the effect of implementing a flexible display device with HD image quality.

Additionally, as shown in FIG. 8, a black matrix 291 may be disposed between each phosphor to improve contrast. In other words, this black matrix 291 can improve contrast between light and dark.

Meanwhile, as described above, when the partition walls (190 and 290 in FIGS. 1 to 9) have an oblique angle, they have an effect of improving light efficiency with respect to the phosphor filled in the light emitting device. At this time, the barrier rib is formed of relatively transparent negative photoresist (negative PR) in order to have a high shape compared to the width. In this way, the partition formed through negative PR may have a protruding top, a vertical shape, or an inverted pyramid structure. Additionally, at this time, the partition wall may form an incline on the side as reflow progresses during the baking process depending on the material characteristics. However, there is a limit to the distance the material can move due to thermal energy, so there is a limit to the angle change for forming the side slope.

Therefore, hereinafter, a display device that forms a lateral slope of the partition will be described in detail.

Figure 10 schematically shows a cross-sectional view of a display device according to embodiments.

In FIG. 10, 1000 represents a display device according to embodiments. The display device 1000 according to embodiments provides a structure in which light efficiency is improved and color purity is improved.

To this end, the display device 1000 according to embodiments includes a wiring board 1100 (e.g., the substrate described in FIGS. 1 to 9) and a plurality of light emitting elements 1200 (e.g., the substrate described in FIGS. 1 to 9). 9), a barrier rib 1300 (e.g., a barrier rib described in FIGS. 1 to 9), and a coating layer 1400. Unlike shown in FIG. 10, the components of the display device 1000 are not limited to those shown in FIG. 10. The display device 1000 may include more components than those shown in FIG. 10 or may include fewer components than the components shown in FIG. 10 .

The wiring board 1100 is a board including a printed circuit that applies electrical signals to one or more light emitting devices 1200. For example, the wiring board 1100 has wiring such as a first electrode 120, a second electrode 140, and an insulating layer 160 printed on the board 110. The wiring board 1100 is, for example, a flexible board and includes, for example, glass or polyimide. Alternatively, the wiring board 1100 includes a board made of a flexible material, such as polyethylene naphthatalate (PEN) or polyethylene terephthalate (PET).

The light emitting device 1200 is formed on the wiring board 1100. The light emitting device 1200 receives electrical signals from the outside through wiring printed on the wiring board 1100. The light emitting device 1200 emits the supplied electrical signal as light. Through this, the light emitting device 1200 emits light. The light emitting device 1200 is, for example, an LED (Light Emditting Diode).

One or more partition walls 1300 are formed between at least a portion of the plurality of light emitting devices 1200 . The partition wall 1300 is formed between the light emitting devices 1200 to provide a space filled with, for example, the phosphor layer 1700 (see FIG. 16). The partition wall 1300 is formed between the plurality of light emitting devices 1200 to prevent light emitted from the light emitting devices 1200 from being mixed with each other. Additionally, the partition wall 1300 functions as a reflective layer or absorption layer.

The coating layer 1400 is formed surrounding one or more partition walls 1300. As shown in FIG. 10, the coating layer 1400 forms the side surface of the partition wall 1300. The coating layer 1400 forms a lateral slope of the partition wall 1400. The coating layer 1400 is formed to cover the partition wall 1400, and its thickness gradually increases from the top of the partition wall 1400 toward the bottom of the partition wall 1400. That is, the coating layer 1400 is inclined from the top of the partition 1400 toward the light emitting device 1200.

The coating layer 1400 according to embodiments may form a slope on the side of the partition wall 1300 that could not be realized through the materials of the existing partition wall 1300 itself. The coating layer 1400 causes light emitted from the light emitting device 1200 to be reflected toward the top of the light emitting device 1200 by the coating layer 1400. Additionally, the coating layer 1400 prevents light emitted from the light emitting devices 1200 from crossing the partition wall 1300 and mixing colors with each other.

Through this, the display device 1000 according to embodiments can improve color purity and improve luminous efficiency.

Below, the structure of the partition wall 1300 and/or the coating layer 1400 will be described in more detail.

Figure 11 is a diagram explaining the slope of the coating layer according to embodiments.

As described in FIG. 10 , the display device 1000 according to embodiments includes a coating layer 1400 formed from the top of the partition 1300 toward the light emitting device 1200 .

FIG. 11 (a) is a diagram illustrating an example of the inclination of the coating layer 1400.

As shown in (a) of FIG. 11, the coating layer 1400 forms an inclination. The coating layer 1400 includes a concave slope formed toward the upper surface. Accordingly, the coating layer 1400 is formed with different slopes from the top of the partition 1300 toward the light emitting device 1200. These inclined surfaces may be connected to each other to form a curved surface that is concave toward the top.

For example, the coating layer 1400 includes a slope. The slope includes a first slope (α), a second slope (β), and a third slope (γ). At this time, for example, the first slope (α) is a slope formed relatively close to the top of the partition wall 1300. Also, for example, the second slope γ is a slope formed relatively close to the light emitting device 1200. Also, for example, the third slope (β) is a slope located between the first slope (α) and the second slope (γ). At this time, the first slope (α) is greater than the third slope (β). Additionally, the third slope (β) is greater than the second slope (γ). Additionally, the third inclination (β) is formed in a range of, for example, 15 degrees to 80 degrees. Through this, the coating layer 1400 is formed from the top of the partition 1300 toward the light emitting device 1200, and is formed concavely.

FIG. 11 (b) is a diagram explaining the light emission and/or reflection angle of the light emitting device 1200 depending on the inclination of the coating layer 1400.

For the display device 1000, unlike lighting, the luminance coming into the 120-degree viewing angle of the person looking at the screen is important. Accordingly, it is important for the display device 1000 to increase the efficiency of the light source or to convert the light source to emit front light. This is because, in the case of the display device 1000, the luminance of the display device 1000 varies depending on the change in the reflection angle of the side of the light emitting element 1200 included in the display device 1000.

For example, the light emitting device 1200 emits light through the top and side surfaces of the light emitting device 1200. At this time, relatively more light is emitted from the side of the light-emitting device 1200 than from the top surface of the light-emitting device 1200. Therefore, as light emitted from the side of the light emitting device 1200 is converted into front light, luminance is improved.

Meanwhile, as explained through (a) of FIG. 11, the display device 1000 according to embodiments includes a coating layer 1400 formed in a curved structure. Accordingly, the light emitted from the light emitting device 1200 is reflected by the coating layer 1400. At this time, the more horizontal the light emitted from the light emitting device 1200 is, the lower the side reflection angle must be for converting it into front light. That is, as the divergence angle (a) increases, the reflection angle (b) on the front light conversion side decreases. Accordingly, the coating layer 1400 according to embodiments has a steep slope in the upper area where light with a large divergence angle (a) is reflected. Additionally, the lower area of the coating layer 1400, where light with a small divergence angle (a) is reflected, has a relatively gentle slope. That is, the coating layer 1400 forms an inclination with a concave curved surface from the top of the partition wall 1300 toward the light emitting device 1200.

According to this structure, the display device 1000 according to embodiments can efficiently convert divergent light into front light in a limited pixel space by changing the side angle of the partition wall 1300 according to the curved structure. Additionally, embodiments improve light efficiency.

Figure 12 is a diagram explaining the height of a coating layer according to embodiments.

As described in FIGS. 10 and 11 , the display device 1000 includes a coating layer 1400 that is inclined from the top of the partition wall 1300 toward the light emitting device 1200 . For convenience of explanation, the coating layer formed on the upper side of the partition 1300 in the inclined area of the coating layer 1400 is referred to as the upper end 1410 of the coating layer. Additionally, in the inclined area of the coating layer 1400, the coating layer formed on the light emitting device 1200 side is called the lower end 1420 of the coating layer.

In Figure 12, h1 represents the height of the light emitting device 1200. Additionally, in FIG. 12, h2 represents the height of the lower end 1420 of the coating layer. At this time, the height is the height from the substrate 1100.

The coating layer 1400 is formed so that light emitted from the light emitting device 1200 is not interrupted by the coating layer 1400. Therefore, the coating layer 1400 must be formed so that the side light of the light emitting device 1200 is reflected by the coating layer 1400 to become front light. Accordingly, the coating layer 1400 is formed so that the height h2 of the lower end 1420 of the coating layer is lower than the height h1 of the light emitting device 1200.

Meanwhile, although not separately shown, the height of the partition wall 1300 is higher than the height h1 of the light emitting device 1200. Through this, the coating layer 1400 sloping from the top of the partition 1300 converts most of the light emitted from the side of the light emitting device 1200 into front light.

Through this, the display device 1000 according to embodiments does not interfere with the light emitted from the light-emitting device 1200 and simultaneously converts all or most of the light emitted from the light-emitting device 1200 into front light. Accordingly, embodiments allow light efficiency to be improved.

Figure 13 is a diagram explaining the degree of slope depending on the viscosity of the coating layer according to embodiments.

The coating layer 1400 described in FIGS. 10 to 12 is formed, for example, by coating with a liquid solution or attaching a film.

At this time, when coating using a solution, the coating layer 1400 forms a curved slope. For this purpose, the solution contains a substance in which the polymer is dissolved as a solvent. For example, solvents include Propylene glycol monomethyl ether (PGME), Propylene glycol monomethyl ether acetate (PGMEA), Cyclopentanone, Cyclohexanone, Diethylene glycol monoethyl ether acetat (DGMEA), Methyl ethyl ketone (MEK), acetone, ethanol, Isopropyl alcohole (IPA) ), xylene, etc. The solution forms a curved slope as the solvent volatilizes.

Figure 13 (a) shows a coating layer formed by a low viscosity liquid coating. As shown in (a) of FIG. 13, when the viscosity of the solution is low, the coating layer 1400 has a small curvature and forms a curved surface. Accordingly, the coating layer 1400 has a relatively steep slope and is formed with a relatively thin thickness. In this case, for example, it is advantageous for side emission of the light emitting device 1200.

Figure 13(b) shows a coating layer formed by a high viscosity liquid coating. As shown in (b) of FIG. 13, when the viscosity of the solution is high, the coating layer 1400 has a large curvature and forms a curved surface. Accordingly, the coating layer 1400 has a relatively gentle slope and is formed to be relatively thick. In this case, for example, it is advantageous for side emission of light emitting devices 1200 manufactured to different standards.

Therefore, the coating layer 1400 according to the embodiments is formed by appropriately adjusting the shape of the coating layer 1400 according to the environment in which the coating layer 1400 is used.

14 is a diagram illustrating various examples of partition walls and/or coating layers according to embodiments.

As described in FIGS. 10 to 13 , the display device 1000 according to embodiments includes a partition wall 1300 and a coating layer 1400 that covers the partition wall 1300 and forms a slope.

At this time, the partition wall 1300 is formed in a bar shape with the upper and lower widths being the same or similar. In this case, the partition wall 1300 has high light transmittance. Therefore, the bar-shaped partition 1300 provides high light efficiency.

Alternatively, the partition wall 1300 is formed in an inverted pyramid shape where the top width is wider than the bottom width. In this case, the partition wall 1300 may have a high height relative to the light emitting device 1200. Accordingly, the partition wall 1300 blocks all or most of the light emitted from the light emitting device 1200 from mixing with each other. At this time, the partition wall 1300 is formed through negative photoresist. However, the shape of the partition wall 1300 is not limited to this, and for example, the partition wall 1300 may have any shape such as a pyramid shape. Additionally, the method of forming the barrier rib 1300 is not limited to this, and may be formed using, for example, positive photoresist.

Below, various shapes of the partition wall 1300 or the coating layer 1400 that further improve color purity and/or light efficiency will be described.

Figure 14(a) explains an example in which a metal layer 1500 is further included.

The display device 1000 according to embodiments may further include a metal layer 1500 deposited on the coating layer 1400. The metal layer 1500 is, for example, deposited on the partition wall 1300 and/or the coating layer 1400 coated on the partition wall 1300. Metal layer 1500 is, for example, a reflective structure. The metal layer 1500 includes, for example, Al, Ag, Ti, Sn metal oxide, etc. Although not shown, the metal layer 1500 may be formed including several layers, such as a reflective layer and an adhesive layer that bonds the reflective layer and the coating layer 1400.

Meanwhile, the metal layer 1500 is formed to have a thickness of, for example, 50 nm or more. The metal layer 1500 is deposited on the partition wall 1300 and/or the coating layer 1400 in particle units, such as by sputtering. The metal layer 1500 is grown in an island format from particle units. Accordingly, the metal layer 1500 forms a reflective layer in certain parts and cannot form a reflective layer in other certain parts until a certain thickness or more is formed. At this time, the constant thickness is about 50 nm. Accordingly, the metal layer 1500 is deposited on the partition wall 1300 and/or the coating layer 1400 to a thickness of 50 nm or more.

Through this, the embodiments more efficiently convert the light emitted from the light emitting device 1200 into front light and further improve light efficiency.

Figure 14(b) explains an example in which the partition 1300 or the coating layer 1400 includes a white material.

The partition wall 1300 and/or the coating layer 1400 according to embodiments include a white material. White materials include white materials such as TiO2, for example. When the coating layer 1400 includes a white material, the coating layer 1400 is evenly cured over the entire coating layer 1400.

Meanwhile, the partition wall 1300 is generally formed of metal using vacuum equipment. However, in this case, there are process difficulties due to the use of vacuum equipment.

Accordingly, the partition wall 1300 may be formed using a light-transmissive material. Alternatively, when the partition wall 1300 includes a white material, the partition wall 1300 may be formed thinner. In this case, for example, when the display device 1000 includes a phosphor layer as will be described later, the display device 1000 can accommodate a larger amount of the phosphor layer.

At this time, the partition wall 1300 may include a low content of white material, and the coating layer 1400 may include a high content of white material. Through this, the embodiments form the partition wall 1300 relatively easily and provide a coating layer 1400 with improved reflective ability.

Alternatively, the partition 1300 may be formed of a transparent material that is easy to expose, and the coating layer 1400 may be formed of a white material that is easy to form patterns. Through this, the embodiments improve ease of manufacture.

Figure 14(c) explains an example in which the partition 1300 includes pores.

The partition wall 1300 according to embodiments includes a plurality of pores 1301. A coating layer 1400 is formed on at least a portion of the pores 1301. At this time, the coating layer 1400 includes, for example, a high-content reflective material. The coating layer 1400 penetrates at least a portion of the pores 1301. Through this, at least a portion of the pores 1301 may be filled with the coating layer 1400. Through this structure, embodiments can improve the transmittance of not only the coating layer 1400 but also the partition wall 1300 itself.

Figure 14(d) explains an example in which the coating layer is formed relatively narrowly.

The display device 1000 according to embodiments includes a partition wall 1300 formed of a transparent material and a coating layer 1400 formed on the partition wall 1300 through white photoresist through UV exposure. Through this structure, embodiments provide the effect of improving color purity and light efficiency by forming the partition wall 1300 and the coating layer 1400 even in situations where the pitch is narrow, for example.

In FIG. 14 , various examples providing the effect of improving color purity or improving light efficiency through the structure of the partition wall 1300 or the coating layer 1400 are described. In FIG. 15 below, a method of improving color purity or light efficiency through arrangement of the partition wall 1300 or the coating layer 1400 will be described.

FIG. 15 is a diagram illustrating various examples of partition walls and/or coating layers according to embodiments.

The partition 1300 according to embodiments may be composed of one wall. However, the partition 1300 may be formed by, for example, a plurality of rods spaced apart from each other in order to increase the surface area of the coating layer 1400 deposited on the partition 1300. In this case, a plurality of rods (eg, 1301, 1302, and 1303) are arranged to be spaced apart from each other and misaligned.

As shown in (a) of FIG. 15, for example, the first rod 1301 and the second rod 1302 are formed in a diagonal direction and spaced apart from each other. Also, for example, the second rod 1302 is formed in a diagonal direction and spaced apart from the third rod 1303. At this time, each rod (eg, 1301, 1302, and 1303) is formed of negative or positive type PR material, PR material including white material, or transparent material serving as a UV optical waveguide. At this time, each rod may be formed in a size smaller than the pixel unit size.

In this case, as shown in (b) of FIG. 15, the coating layer 1400 is deposited to have a large surface area while surrounding each rod (eg, 1301, 1302, and 1303).

Through this, the display device 1000 according to embodiments provides a method of increasing the filling rate inside the partition wall 1300 structure.

Figure 16 schematically shows a cross-sectional view of a display device according to embodiments.

In FIG. 16 , an example in which the partition wall 1300 and the coating layer 1400 described with reference to FIGS. 10 to 15 are applied to the display device 1000 will be described.

Figure 16 (a) explains an example of color conversion of a light emitting device through a phosphor layer or a color filter.

Figure 16(a) shows a display device 1000 that outputs RGB colors. In order to output RGB colors, the display device 1000 includes a light-emitting element 1200 and a phosphor layer (e.g., 1700r, 1700g) or a color filter 1600 that converts the color of light emitted from the light-emitting element 1200. Includes.

The light emitting device 1200 is, for example, a blue light emitting device and emits blue light, for example.

The phosphor layer 1700 converts the color of light emitted from the light emitting device 1200. For this purpose, the phosphor layer 1700 includes phosphor. Phosphors include, for example, organic phosphors, inorganic phosphors, quantum dots, etc. For example, the phosphor layer 1700r converts blue light into red light. Or, for example, the phosphor layer 1700g converts blue light into green light.

At this time, the phosphor layer 1700 is formed to have a thickness of, for example, a predetermined size or more. For example, when the phosphor included in the phosphor layer 1700 is an inorganic phosphor, the predetermined size is 15 um to 25 um, and is preferably 20 um. For example, when the phosphor included in the phosphor layer 1700 is an organic phosphor, the predetermined size is 8 um to 13 um, and is preferably 10 um. The phosphor layer 1700 is formed to have a thickness of a predetermined size or more, thereby performing color conversion.

The barrier rib 1300 and the coating layer 1400 surrounding the barrier rib 1300 according to embodiments prevent the lights converted by the phosphor layer 1700 from mixing with each other. Through this, embodiments provide a method of increasing color purity of a display device. Meanwhile, the color filter 1600 improves the purity of light excited by the phosphor layer 1700. Through this, the display device 1000 provides a method to further improve color purity.

Figure 16(b) explains an example of controlling the roughness of the phosphor surface.

As shown in (b) of FIG. 16, in the display device 1000 according to embodiments, the boundary area 1701 between the phosphor layer 1700 and the light emitting device 1200 is formed with a rough surface. In embodiments, the boundary area 1701 of the phosphor layer is formed with roughness so that light emitted from the light emitting device 1200 passes through the rough surface and is further converted into front light by the coating layer 1400.

Through this, the embodiments provide a method of increasing color purity and light efficiency.

Figure 16(c) explains an example in which the light emitting device is a micro LED.

The display device 1000 according to embodiments includes a light-emitting element 1200, for example, a micro-sized light-emitting element. The light emitting device 1200 includes, for example, a red LED (1200r) that emits red light, a green LED (1200g) that emits green light, and a blue LED (1200b) that emits blue light. That is, the light emitting device 1200 emits RGB colors without a color conversion layer such as a fluorescent layer or a color filter. The partition 1300 and/or the coating layer 1400 according to embodiments may be applied even when they do not include a color conversion layer. Through this, the display device 1000 according to embodiments provides a display device 1000 with improved light efficiency.

In this way, for example, the partition wall 1300 and/or the coating layer 1400 according to the embodiments can also be applied to the display device 1000 that does not involve color conversion.

Meanwhile, although not shown in FIG. 16, for example, the display device 1000 may further include a light diffusion layer coated on the light emitting device 1200. The display device 1000 allows light emitted from the light emitting device 1200 to be further diffused through the light diffusion layer. Through this, the embodiments further improve the light efficiency of the light emitting device 1200.

As described above, the display device 1000 according to embodiments can be applied to various structures or forms, such as a display device structure, a color filter forming method, and a panel structure.

Figure 17 shows a flowchart of a method for controlling a display device according to embodiments.

In FIG. 17 , a method of manufacturing the display device 1000 described with reference to FIGS. 10 to 18 will be described.

As shown in FIG. 17, the control method of the display device 1000 according to embodiments includes forming one or more partition walls 1300 between the plurality of light emitting elements 1200 (s101). Includes.

As shown in FIG. 17 , the method of controlling the display device 1000 according to embodiments includes forming a coating layer 1400 surrounding one or more partition walls 1300 (s102). For example, the coating layer 1400 is formed surrounding the partition wall 1300 using a slit coating method. At this time, the coating layer 1400 is formed in an asymmetric structure with respect to the light emitting device 1200 by the discharge port moving in one direction perpendicular to the partition wall 1300. Alternatively, the coating layer 1400 is formed in a symmetrical structure with respect to the light emitting device 1200 by a discharge port that moves in a reciprocating manner. Alternatively, the coating layer 1400 is formed in a symmetrical structure with respect to the light emitting device 1200 by a discharge port that moves along the partition wall 1300 in parallel with the partition wall 1300 . Or, for example, the coating layer 1400 is formed through an individual ejection nozzle, such as an inkjet. Or, for example, the coating layer 1400 forms a curved surface on the side of the partition wall 1300 by attaching a white film. The coating method of the coating layer 1400 is not limited to this. As such, the coating layer 1400 according to embodiments is formed through various methods.

The light-emitting device, the display device including the light-emitting device, and the manufacturing method thereof according to the embodiments of the present invention have been described above as specific embodiments, but this is only an example and the present invention is not limited thereto, and the disclosure disclosed herein It should be interpreted as having the widest scope according to the basic idea.

A person skilled in the art may combine and substitute the disclosed embodiments to implement embodiments not specified, but this also does not deviate from the scope of the present invention. In addition, a person skilled in the art can easily change or modify the embodiments disclosed based on the present specification, and it is clear that such changes or modifications also fall within the scope of the present invention.

In the previous table of contents, various forms for implementing the invention have been described in detail.

The light-emitting device, the display device including the light-emitting device, and the manufacturing method according to the embodiments have industrial applicability.

Claims (15)

1. wiring board;

   a plurality of light emitting devices formed on the wiring board;

   one or more partition walls formed between at least some of the plurality of light emitting devices; and

   a coating layer surrounding the one or more partition walls;

   Including,

   Display device.
2. According to paragraph 1,

   The coating layer is,

   Forming a slope from the top of the partition toward the light emitting element,

   Display device.
3. According to paragraph 2,

   The coating layer is,

   The slope is formed concavely toward the upper surface,

   Display device.
4. According to paragraph 2,

   The slope is,

   A first slope close to the top of the partition, a second slope close to the light emitting element, and a third slope located between the first slope and the second slope,

   The first slope is greater than the third slope, and the third slope is greater than the second slope,

   Display device.
5. According to clause 4,

   The third tilt is formed in the range of 15 degrees to 80 degrees,

   Display device.
6. According to paragraph 1,

   The coating layer is,

   It includes a lower portion that faces the light emitting device,

   The height of the lower part is lower than the height of the light emitting element,

   Display device.
7. According to paragraph 1,

   The bulkhead is,

   The upper part of the partition wall is formed to be wider than the lower part of the partition wall,

   Display device.
8. According to paragraph 1,

   The display device is,

   a metal layer formed on the coating layer;

   Containing more,

   Display device.
9. According to paragraph 1,

   The partition wall or the coating layer includes a white material,

   Display device.
10. According to paragraph 1,

    The partition wall includes a plurality of pores,

    The coating layer is formed on at least a portion of the pores,

    Display device.
11. According to paragraph 1,

    The bulkhead is,

    Formed by a plurality of rods arranged at odds with each other,

    Display device.
12. According to paragraph 1,

    A phosphor layer formed on the light-emitting device and converting the color of light emitted from the light-emitting device.

    Display device.
13. According to paragraph 1,

    The display device is,

    A color filter formed on the light-emitting device and converting the color of light emitted from the light-emitting device.

    Display device.
14. According to paragraph 1,

    The light emitting device is,

    A micro LED with a micro size,

    Display device.
15. On a wiring board on which a plurality of light emitting devices are spaced apart, forming one or more partition walls between at least some of the plurality of light emitting devices; and

    forming a coating layer surrounding the one or more partition walls;

    Including,

    Method of manufacturing a display device.

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