WO2024103573A1

WO2024103573A1 - Optical module

Info

Publication number: WO2024103573A1
Application number: PCT/CN2023/079593
Authority: WO
Inventors: 隋少帅; 陈思涛; 赵其圣
Original assignee: 青岛海信宽带多媒体技术有限公司
Priority date: 2022-11-18
Filing date: 2023-03-03
Publication date: 2024-05-23

Abstract

An optical module (200), comprising: a semiconductor gain chip (4051), a silicon optical chip (4052), a wavelength calibration member (4062), and a second power monitor (4063). The silicon optical chip (4052) comprises: an input coupler (40521), a directional coupler (40522), a wavelength adjustable optical component, a second power splitter (40525), a third power monitor (40528), and an output coupler (405210). The input coupler (40521) is configured to receive a light beam emitted by the semiconductor gain chip (4051) and emit a light beam of a specific wavelength to the semiconductor gain chip (4051). The third power monitor (40528), the wavelength calibration member (4062) and the second power monitor (4063) form a wavelength locking optical component, so that the wavelength locking optical component implements wavelength locking according to the ratio of the optical power of the second power monitor (4063) to the optical power of the third power monitor (40528).

Description

Optical Module

This application claims the priority of application number 202211451019.9 filed on November 18, 2022 with the China Patent Office and the priority of application number 202211449855.3 filed on November 18, 2022 with the China Patent Office, the entire contents of which are incorporated by reference into this disclosure.

Technical Field

The present disclosure relates to the field of optical communication technology, and in particular to an optical module.

Background technique

Optical communication technology is used in new services and application models such as cloud computing, mobile Internet, and video. In optical communication, optical modules are tools for converting photoelectric signals into each other. They are one of the key components in optical communication equipment. With the rapid development of 5G networks, optical modules, which are at the core of optical communication, have made great progress.

Summary of the invention

The present disclosure provides an optical module, including: a semiconductor gain chip, a silicon photonic chip, a wavelength calibration component, and a second power monitor. The silicon photonic chip is configured to receive a light beam of a wavelength range emitted by the semiconductor gain chip, and to filter a specific wavelength light beam from the light beam, and is also configured to emit the specific wavelength light beam to the semiconductor gain chip and the wavelength calibration component. Among them, the silicon photonic chip includes: an input coupler, a directional coupler, a wavelength tunable optical component, a second power divider, a third power monitor, and an output coupler, and the input coupler is configured to receive the light beam emitted by the semiconductor gain chip and emit a specific wavelength light beam to the semiconductor gain chip. The third power monitor, the wavelength calibration component, and the second power monitor form a wavelength locking optical component, so that the wavelength locking optical component can achieve wavelength locking according to the ratio of the optical power of the second power monitor to the optical power of the third power monitor. Or, the silicon photonic chip includes: an input coupler, a directional coupler, a wavelength tunable optical component, a wavelength sensor, a fifth power monitor, and a sixth power monitor, and the fifth power monitor, the wavelength sensor, and the sixth power monitor form a wavelength locking optical component, so that the wavelength locking optical component can achieve wavelength locking according to the ratio of the optical power of the fifth power monitor to the optical power of the sixth power monitor.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the technical solutions in the present disclosure, the following briefly introduces the drawings required to be used in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the product involved in the embodiments of the present disclosure, the actual process of the method, the actual timing of the signal, etc.

FIG1 is a connection diagram of an optical communication system provided according to some embodiments of the present disclosure;

FIG2 is a structural diagram of an optical network terminal provided according to some embodiments of the present disclosure;

FIG3 is a structural diagram of an optical module provided according to some embodiments of the present disclosure;

FIG4 is an exploded structural diagram of an optical module provided according to some embodiments of the present disclosure;

FIG5 is a structural diagram of an optical module without a housing and an unlocking component according to some embodiments of the present disclosure;

FIG6 is a structural diagram of a fiber optic adapter, a light source, coherent components, and a circuit board according to some embodiments of the present disclosure;

FIG7 is an exploded structural diagram of an optical module without a housing and an unlocking component according to some embodiments of the present disclosure;

FIG8 is a structural diagram of a first angle of an optical fiber winding rack provided according to some embodiments of the present disclosure;

FIG9 is a structural diagram of a second angle of an optical fiber winding rack provided according to some embodiments of the present disclosure;

FIG10 is a structural diagram of a light source provided according to some embodiments of the present disclosure;

FIG11 is an exploded view of a light source provided according to some embodiments of the present disclosure;

FIG12 is a structural diagram of a first support plate provided according to some embodiments of the present disclosure;

FIG13 is a structural diagram of a second support plate at a first angle according to some embodiments of the present disclosure;

FIG14 is a structural diagram of a second support plate at a second angle according to some embodiments of the present disclosure;

FIG15 is a structural diagram of a second circuit board provided according to some embodiments of the present disclosure;

FIG16 is a structural diagram of a light source provided according to some embodiments of the present disclosure;

FIG17 is an exploded view of a light source provided according to some embodiments of the present disclosure;

FIG18 is a structural diagram of a light source without an upper cover, optical components and an internal optical fiber adapter according to some embodiments of the present disclosure;

FIG19 is an exploded view of a light source without an upper cover, optical components, and internal fiber adapters according to some embodiments of the present disclosure;

FIG20 is a structural diagram of a second fixing frame provided according to some embodiments of the present disclosure;

FIG21 is a structural diagram of a first fixing frame provided according to some embodiments of the present disclosure;

FIG22 is a first cross-sectional view of a light source provided according to some embodiments of the present disclosure;

FIG23 is a second cross-sectional view of a light source provided according to some embodiments of the present disclosure;

FIG24 is a structural diagram of a first light source provided according to some embodiments of the present disclosure;

FIG25 is a structural diagram of a second light source provided according to some embodiments of the present disclosure;

FIG26 is a structural diagram of a third light source provided according to some embodiments of the present disclosure;

FIG27 is a structural diagram of a fourth light source provided according to some embodiments of the present disclosure;

FIG28 is a structural diagram of a fifth light source provided according to some embodiments of the present disclosure;

FIG29 is a structural diagram of a first silicon photonic chip provided according to some embodiments of the present disclosure;

FIG30 is a filtering curve diagram of a wavelength sensor according to some embodiments of the present disclosure;

FIG31 is a structural diagram of a sixth light source provided according to some embodiments of the present disclosure;

FIG32 is a structural diagram of a second silicon photonic chip provided according to some embodiments of the present disclosure;

FIG33 is a structural diagram of a third silicon photonic chip provided according to some embodiments of the present disclosure.

Detailed ways

In an optical communication system, light signals are used to carry information to be transmitted, and the light signals carrying information are transmitted to information processing equipment such as computers through information transmission equipment such as optical fibers or optical waveguides to complete the transmission of information. Since light has passive transmission characteristics when transmitted through optical fibers or optical waveguides, low-cost and low-loss information transmission can be achieved. In addition, the signals transmitted by information transmission equipment such as optical fibers or optical waveguides are optical signals, while the signals that can be recognized and processed by information processing equipment such as computers are electrical signals. Therefore, in order to establish an information connection between information transmission equipment such as optical fibers or optical waveguides and information processing equipment such as computers, it is necessary to realize the mutual conversion between electrical signals and optical signals.

Optical modules realize the above-mentioned mutual conversion function between optical signals and electrical signals in the field of optical communication technology. Optical modules include optical ports and electrical ports. The optical modules realize optical communication with information transmission equipment such as optical fibers or optical waveguides through the optical ports, and realize electrical connection with optical network terminals (for example, optical modems) through the electrical ports. The electrical connection is mainly configured for power supply, I2C signal transmission, data information transmission, and grounding. The optical network terminal transmits electrical signals to information processing equipment such as computers through network cables or wireless fidelity technology.

FIG1 is a connection diagram of an optical communication system according to some embodiments of the present disclosure. As shown in FIG1 , the optical communication system includes a remote server 1000 , a local information processing device 2000 , an optical network terminal 100 , an optical module 200 , an optical fiber 101 and a network cable 103 .

One end of the optical fiber 101 is connected to the remote server 1000, and the other end is connected to the optical network terminal 100 through the optical module 200. The optical fiber itself can support long-distance signal transmission, such as signal transmission of several kilometers (6 kilometers to 8 kilometers). On this basis, if a repeater is used, theoretically, unlimited distance transmission can be achieved. Therefore, in a common optical communication system, the distance between the remote server 1000 and the optical network terminal 100 is 100 kilometers. The distance can usually reach thousands of meters, tens of kilometers or hundreds of kilometers.

One end of the network cable 103 is connected to the local information processing device 2000, and the other end is connected to the optical network terminal 100. The local information processing device 2000 can be any one or more of the following devices: a router, a switch, a computer, a mobile phone, a tablet computer, a television, etc.

The physical distance between the remote server 1000 and the optical network terminal 100 is greater than the physical distance between the local information processing device 2000 and the optical network terminal 100. The connection between the local information processing device 2000 and the remote server 1000 is completed by the optical fiber 101 and the network cable 103; and the connection between the optical fiber 101 and the network cable 103 is completed by the optical module 200 and the optical network terminal 100.

The optical module 200 includes an optical port and an electrical port. The optical port is configured to be connected to the optical fiber 101, so that the optical module 200 establishes a bidirectional optical signal connection with the optical fiber 101; the electrical port is configured to be connected to the optical network terminal 100, so that the optical module 200 establishes a bidirectional electrical signal connection with the optical network terminal 100. The optical module 200 realizes the mutual conversion between optical signals and electrical signals, so that an information connection is established between the optical fiber 101 and the optical network terminal 100. For example, the optical signal from the optical fiber 101 is converted into an electrical signal by the optical module 200 and then input into the optical network terminal 100, and the electrical signal from the optical network terminal 100 is converted into an optical signal by the optical module 200 and input into the optical fiber 101. Since the optical module 200 is a tool for realizing the mutual conversion between optical signals and electrical signals.

The optical network terminal 100 includes a roughly rectangular housing, and an optical module interface 102 and a network cable interface 104 arranged on the housing. The optical module interface 102 is configured to access the optical module 200, so that the optical network terminal 100 establishes a bidirectional electrical signal connection with the optical module 200; the network cable interface 104 is configured to access the network cable 103, so that the optical network terminal 100 establishes a bidirectional electrical signal connection with the network cable 103. The optical module 200 and the network cable 103 are connected through the optical network terminal 100. For example, the optical network terminal 100 transmits the electrical signal from the optical module 200 to the network cable 103, and transmits the electrical signal from the network cable 103 to the optical module 200. Therefore, the optical network terminal 100, as the host computer of the optical module 200, can monitor the operation of the optical module 200. In addition to the optical network terminal 100, the host computer of the optical module 200 can also include an optical line terminal (OLT) and the like.

The remote server 1000 establishes a bidirectional signal transmission channel with the local information processing device 2000 through the optical fiber 101 , the optical module 200 , the optical network terminal 100 and the network cable 103 .

FIG2 is a structural diagram of an optical network terminal provided according to some embodiments of the present disclosure. In order to clearly show the connection relationship between the optical module 200 and the optical network terminal 100, FIG2 only shows the structure of the optical network terminal 100 related to the optical module 200. As shown in FIG2, the optical network terminal 100 also includes a circuit board 105 disposed in the housing, a cage 106 disposed on the surface of the circuit board 105, a heat sink 107 disposed on the cage 106, and an electrical connector disposed inside the cage 106. The electrical connector is configured to access the electrical port of the optical module 200; the heat sink 107 has a protrusion such as a fin to increase the heat dissipation area.

The optical module 200 is inserted into the cage 106 of the optical network terminal 100, and the cage 106 fixes the optical module 200. The heat generated by the optical module 200 is transferred to the cage 106 and then diffused through the heat sink 107. After the optical module 200 is inserted into the cage 106, the electrical port of the optical module 200 is connected to the electrical connector inside the cage 106, so that the optical module 200 and the optical network terminal 100 establish a bidirectional electrical signal connection. In addition, the optical port of the optical module 200 is connected to the optical fiber 101, so that the optical module 200 and the optical fiber 101 establish a bidirectional optical signal connection.

FIG3 is a structural diagram of an optical module provided according to some embodiments of the present disclosure. FIG4 is a decomposed structural diagram of an optical module provided according to some embodiments of the present disclosure. FIG5 is a structural diagram of an optical module provided according to some embodiments of the present disclosure with a housing and unlocking components removed. FIG6 is a structural diagram of an optical fiber adapter, a light source, a coherent component, and a circuit board provided according to some embodiments of the present disclosure. As shown in FIGS. 3-6, the optical module 200 includes a housing, a circuit board 300, a light source component 400, a coherent component 500, a DSP chip 600, and an optical fiber winding rack 700 disposed in the housing.

The shell comprises an upper shell 201 and a lower shell 202 . The upper shell 201 covers the lower shell 202 to form the above shell with two openings. The outer contour of the shell is generally a square body.

In some embodiments of the present disclosure, the lower shell 202 includes a bottom plate 2021 and two lower side plates 2022 located on both sides of the bottom plate 2021 and arranged perpendicular to the bottom plate 2021; the upper shell 201 includes a cover plate 2011, and the cover plate 2011 covers the two lower side plates 2022 of the lower shell 202 to form the above-mentioned shell.

In some embodiments, the lower shell 202 includes a bottom plate 2021 and two lower side plates 2022 located on both sides of the bottom plate 2021 and vertically arranged with the bottom plate 2021; the upper shell 201 includes a cover plate 2011 and two upper side plates located on both sides of the cover plate 2011 and vertically arranged with the cover plate 2011, and the two upper side plates are combined with the two lower side plates 2022 to realize that the upper shell 201 covers the lower shell 202.

The direction of the connection line of the two openings 204 and 205 may be consistent with the length direction of the optical module 200, or may be inconsistent with the length direction of the optical module 200. For example, the opening 204 is located at the end of the optical module 200 (the right end of FIG. 3 ), and the opening 205 is also located at the end of the optical module 200 (the left end of FIG. 3 ). Alternatively, the opening 204 is located at the end of the optical module 200, and the opening 205 is located at the side of the optical module 200. The opening 204 is an electrical port, and the gold finger of the circuit board 300 extends from the electrical port and is inserted into the upper computer (for example, the optical network terminal 100); the opening 205 is an optical port, which is configured to access the external optical fiber 101 so that the external optical fiber 101 is connected to the light source 401 inside the optical module 200.

The upper shell 201 and the lower shell 202 are combined to facilitate installation of components such as the circuit board 300 and the light source 401 into the shell, and these components are packaged and protected by the upper shell 201 and the lower shell 202. In addition, when assembling components such as the circuit board 300 and the light source 401, it is convenient to deploy the positioning components, heat dissipation components, and electromagnetic shielding components of these components, which is conducive to automated production.

In some embodiments, the upper shell 201 and the lower shell 202 are made of metal materials, which are conducive to electromagnetic shielding and heat dissipation.

In some embodiments, the optical module 200 further includes an unlocking component located outside its housing, and the unlocking component is configured to achieve a fixed connection between the optical module 200 and the host computer, or to release the fixed connection between the optical module 200 and the host computer.

For example, the unlocking component 203 is located on the outer wall of the two lower side plates 2022 of the lower housing 202, and has a snap-fit component that matches the cage of the host computer (for example, the cage 106 of the optical network terminal 100). When the optical module 200 is inserted into the cage of the host computer, the snap-fit component of the unlocking component fixes the optical module 200 in the cage of the host computer; when the unlocking component is pulled, the snap-fit component of the unlocking component moves accordingly, thereby changing the connection relationship between the snap-fit component and the host computer, so as to release the snap-fit relationship between the optical module 200 and the host computer, so that the optical module 200 can be pulled out of the cage of the host computer.

The circuit board 300 includes circuit traces, electronic components and chips. The electronic components and chips are connected together according to the circuit design through the circuit traces to realize the functions of power supply, electrical signal transmission and grounding. The electronic components include capacitors, resistors, transistors, and metal-oxide-semiconductor field-effect transistors (MOSFET). The chips include microcontroller units (MCU), laser driver chips, limiting amplifiers (limiting amplifiers), clock and data recovery (CDR) chips, power management chips, and digital signal processing (DSP) chips.

The circuit board 300 is generally a rigid circuit board. Due to its relatively hard material, the rigid circuit board can also realize the load-bearing function. For example, the rigid circuit board can stably carry the above-mentioned electronic components and chips; when the light source is located on the circuit board, the rigid circuit board can also provide stable bearing; the rigid circuit board can also be inserted into the electrical connector in the upper computer cage.

The circuit board 300 also includes a gold finger formed on the end surface thereof, and the gold finger is composed of a plurality of independent pins. The circuit board 300 is inserted into the cage 106, and the gold finger is connected to the electrical connector in the cage 106. The gold finger can be set only on the surface of one side of the circuit board 300 (for example, the upper surface shown in FIG. 4), or can be set on the upper and lower surfaces of the circuit board 300 to adapt to occasions where a large number of pins are required. The gold finger is configured to establish an electrical connection with the host computer to realize power supply, grounding, I2C signal transmission, data signal transmission, etc.

Of course, flexible circuit boards are also used in some optical modules. Flexible circuit boards are generally used in conjunction with rigid circuit boards to supplement rigid circuit boards. For example, a flexible circuit board can be used to connect a rigid circuit board to a light source.

The circuit board 300 includes a first circuit board 301, a second circuit board 302 and a third circuit board 303. The first circuit board 301 and the second circuit board 302 are both rigid circuit boards, and the third circuit board 303 is a flexible circuit board. The second circuit board 302 is stacked and placed on one end of the first circuit board 301 close to the light source 401. The second circuit board 302 is located between the first circuit board 301 and the upper shell 201. The first circuit board 301 and the second circuit board 302 are connected through the third circuit board 303.

The light source 401 is connected to the second circuit board 302, and is configured to emit a preset specific wavelength light beam. The light source 401 includes a semiconductor gain chip and a silicon photonic chip. The semiconductor gain chip emits a light beam in a wavelength range. The silicon photonic chip selects a specific wavelength light beam from the light beam in a wavelength range. The silicon photonic chip and the semiconductor gain chip form a resonant cavity. The specific wavelength light beam is reflected back and forth between the silicon photonic chip and the semiconductor gain chip, so that the specific wavelength light beam is stably output by the semiconductor gain chip.

The optical module further includes a transmitting optical fiber adapter 800 and a receiving optical fiber adapter 801. The transmitting optical fiber adapter 800 is configured to transmit a high-speed optical signal, and the receiving optical fiber adapter 801 is configured to receive a high-speed optical signal.

The coherent component 500 is placed on the circuit board and is configured to realize the conversion of high-speed photoelectric signals. The coherent component 500 includes an optical transmission interface, an optical receiving interface and a local oscillator optical interface. The optical transmission interface extends a first optical fiber, the optical receiving interface extends a second optical fiber, the local oscillator optical interface extends a third optical fiber, the optical transmission interface is connected to the transmission optical fiber adapter 800, the optical receiving interface is connected to the receiving optical fiber adapter 801, and the local oscillator optical interface is connected to the light source 401. The coherent component is connected to the transmission optical fiber adapter, the receiving optical fiber adapter and the light source 401 respectively through the optical transmission interface, the optical receiving interface and the local oscillator optical interface, and the coherent component 500 is also connected to the DSP chip 600.

The narrow line width and high power laser emitted by the light source 401 is input into the coherent component 500 through the local oscillator optical interface, and the laser is split inside the coherent component 500, one of which is used as the emission beam and enters the coherent modulator inside the coherent component, and realizes the electro-optical signal conversion under the high-speed electrical signal drive of the DSP chip 600, and the converted high-speed optical signal is output from the optical transmission interface of the module; the other beam is used as the local oscillator beam, and is coherently demodulated with the high-speed optical signal input into the coherent component 500 from the optical receiving port of the module, and the demodulated electrical signal enters the DSP chip 600 for signal processing, thereby completing the optical-electrical signal conversion. Among them, the narrow line width and high power laser are beams of specific wavelengths.

The light source 401 also includes an internal optical fiber adapter, the internal optical fiber adapter extends a first optical fiber, the local oscillator optical interface extends a local oscillator optical fiber, the first optical fiber is fused and connected to the local oscillator optical interface, so that the internal optical fiber adapter is connected to the local oscillator optical interface. The transmitting optical fiber adapter 800 extends a second optical fiber, the optical transmission interface extends the transmitting optical fiber, the second optical fiber is fused and connected to the transmitting optical fiber, so that the transmitting optical fiber adapter 800 is connected to the optical transmission interface. The receiving optical fiber adapter 801 extends a third optical fiber, the optical receiving interface extends the receiving optical fiber, the third optical fiber is fused and connected to the receiving optical fiber, so that the receiving optical fiber adapter 801 is connected to the optical receiving interface.

Since there is a certain failure rate when two optical fibers are fused, in order to ensure that the two optical fibers are finally fused successfully, a certain length of optical fiber needs to be reserved so that the two optical fibers can continue to be fused after the fusion fails. In addition, since the connection point of the first optical fiber and the local oscillator optical fiber fusion connection is located near the internal optical fiber adapter, the connection point of the second optical fiber and the transmitting optical fiber fusion connection is located near the transmitting optical fiber adapter 800, and the connection point of the third optical fiber and the receiving optical fiber fusion connection is located near the receiving optical fiber adapter 801, the lengths of the first optical fiber, the local oscillator optical fiber, the transmitting optical fiber and the receiving optical fiber are relatively long.

The optical fiber winding frame 700 is configured to fix the optical fiber. Since the circuit board 300 is provided with high-frequency signal lines and many devices, the optical fiber cannot be directly laid on the surface of the circuit board 300. Since the first optical fiber, the local oscillator optical fiber, the transmitting optical fiber and the receiving optical fiber are long, in order to prevent the upper shell from damaging the first optical fiber, the local oscillator optical fiber, the transmitting optical fiber and the receiving optical fiber, an optical fiber winding frame 700 for fixing the optical fiber is provided between the coherent component 500 and the upper shell 201.

The first optical fiber, local oscillator optical fiber, transmitting optical fiber and receiving optical fiber are all neatly fixed on the optical fiber winding frame 700, which not only avoids the upper shell from damaging the first optical fiber, local oscillator optical fiber, transmitting optical fiber and receiving optical fiber, but also avoids the signal crosstalk problem caused by directly laying the optical fiber on the surface of the circuit board 300.

FIG8 is a structural diagram of a first angle of an optical fiber winding rack provided according to some embodiments of the present disclosure. FIG9 is a structural diagram of a second angle of an optical fiber winding rack provided according to some embodiments of the present disclosure. As shown in FIG8 and FIG9, in some embodiments, the optical fiber winding rack 700 includes two first support legs 701 and two second support legs 702, the first support legs 701 are engaged with the card interface of the first circuit board 301, the second support legs 702 are connected to the upper surface of the first circuit board 301, the two first support legs 701 are symmetrically arranged on both sides of the optical fiber winding rack 700, the two second support legs 702 are symmetrically arranged on both sides of the optical fiber winding rack 700, and the second support legs 702 are closer to the light source 401 than the first support legs 701.

In some embodiments, the outer surface of the optical fiber winding rack 700 is provided with a first protrusion 703, a second protrusion 704, a third protrusion 705, a third protrusion 706, a third protrusion 707, a third protrusion 708, a third protrusion 709, a third protrusion 710, a third protrusion 711, a third protrusion 712, a third protrusion 7 The first protrusion 703 and the second protrusion 704 are located at the end of the optical fiber winding frame 700 away from the light source 401, and the third protrusion 705, the fourth protrusion 706 and the fifth protrusion 707 are located at the end of the optical fiber winding frame 700 close to the light source 401. A first storage groove is provided between the first protrusion 703, the second protrusion 704, the third protrusion 705, the fourth protrusion 706 and the fifth protrusion 707 and the side of the optical fiber winding frame 700, and a second storage groove 708 is provided between the first protrusion 703 and the second protrusion 704. Among all the protrusions, the storage groove between any two protrusions except the one between the first protrusion 703 and the second protrusion 704 is the first storage groove, and the second storage groove 708 is recessed relative to the first storage groove.

The local oscillator optical fiber, the transmitting optical fiber and the receiving optical fiber all extend from the coherent component 500 through the coherent component 500 and extend into the optical fiber winding rack 700 through the first storage groove between the fourth protrusion 706 and the side of the optical fiber winding rack 700.

The local oscillator optical fiber passes in sequence through the first storage groove between the first protrusion 703 and the side of the optical fiber winding frame 700, the first storage groove between the second protrusion 704 and the side of the optical fiber winding frame 700, the first storage groove between the third protrusion 705 and the side of the optical fiber winding frame 700, the first storage groove between the third protrusion 705 and the fifth protrusion 707, the first storage groove between the third protrusion 705 and the fourth protrusion 706, and the second storage groove 708 between the second protrusion 704 and the first protrusion 703.

The local oscillator optical fiber can also pass through the first storage groove between the third protrusion 705 and the fourth protrusion 706, and then pass through the first storage groove between the second protrusion 704 and the third protrusion 705, the first storage groove between the third protrusion 705 and the fifth protrusion 707, the first storage groove between the third protrusion 705 and the fourth protrusion 706, the first storage groove between the third protrusion 705 and the side of the optical fiber winding frame 700, and the second storage groove 708 between the second protrusion 704 and the first protrusion 703.

The first optical fiber passes through the first placement groove between the fourth protrusion 706 and the side of the optical fiber winding rack 700, the first placement groove between the third protrusion 705 and the side of the optical fiber winding rack 700, the first placement groove between the first protrusion 703 and the side of the optical fiber winding rack 700, the first placement groove between the second protrusion 704 and the side of the optical fiber winding rack 700, the first placement groove between the third protrusion 705 and the side of the optical fiber winding rack 700, the first placement groove between the third protrusion 705 and the fifth protrusion 707, and the third protrusion 708. 05 and the fourth protrusion 706, the first storage groove between the second protrusion 704 and the third protrusion 705, the first storage groove between the third protrusion 705 and the fifth protrusion 707, the first storage groove between the third protrusion 705 and the fourth protrusion 706, the first storage groove between the third protrusion 705 and the side of the optical fiber winding rack 700, the first storage groove between the first protrusion 703 and the side of the optical fiber winding rack 700, and the second storage groove 708 between the second protrusion 704 and the first protrusion 703.

The transmitting optical fiber is fixed in sequence through the first storage groove between the first protrusion 703 and the side of the optical fiber winding rack 700, the first storage groove between the second protrusion 704 and the side of the optical fiber winding rack 700, and the first storage groove between the third protrusion 705 and the side of the optical fiber winding rack 700, and then extends out of the optical fiber winding rack 700 through the first storage groove between the fifth protrusion 707 and the side of the optical fiber winding rack 700, and is fusion-connected with the second optical fiber near the transmitting optical fiber adapter 800.

The receiving optical fiber is fixed in sequence through the first storage groove between the first protrusion 703 and the side of the optical fiber winding rack 700, the first storage groove between the second protrusion 704 and the side of the optical fiber winding rack 700, the first storage groove between the third protrusion 705 and the side of the optical fiber winding rack 700, and the first storage groove between the fifth protrusion 707 and the third protrusion 705, and then extends out of the optical fiber winding rack 700 through the first storage groove between the fourth protrusion 706 and the fifth protrusion 707, and is fusion-connected with the third optical fiber near the receiving optical fiber adapter 801.

In combination with the above description, it can be known that the fusion point where the first optical fiber is fusion-connected with the local oscillator optical fiber is located in the second storage groove 708. In order to protect the fusion point where the first optical fiber is fusion-connected with the local oscillator optical fiber, in some embodiments, a protective cover is provided in the second storage groove 708, and the protective cover is configured to protect the fusion point where the first optical fiber is fusion-connected with the local oscillator optical fiber, and prevent the fusion point where the first optical fiber is fusion-connected with the local oscillator optical fiber from breaking.

Since the fusion point of the first optical fiber and the local oscillator optical fiber is located in the second storage groove 708, in order to increase the number of times the first optical fiber and the local oscillator optical fiber can be fused to ensure successful fusion, the third protrusion 705 is in the shape of a cylinder, and the circumference of the third protrusion 705 is smaller than the sum of the lengths of the first storage groove between the first protrusion 703 and the side of the optical fiber winding rack 700, the first storage groove between the second protrusion 704 and the side of the optical fiber winding rack 700, and the first storage groove between the third protrusion 705 and the side of the optical fiber winding rack 700.

When the optical fiber is not wound along the third protrusion 705, the first optical fiber and the local oscillator optical fiber fail to be fused and need to be fused again. The length of the first optical fiber or the local oscillator optical fiber is the length of the first optical fiber or the local oscillator optical fiber wrapped around the entire optical fiber winding rack 700. After the optical fiber is wound along the third protrusion 705, if the fusion splicing of the first optical fiber and the local oscillator optical fiber fails and needs to be fusion spliced again, the length of the first optical fiber or the local oscillator optical fiber that needs to be cut off is the length of the first optical fiber or the local oscillator optical fiber wrapped around the third protrusion 705.

For example, when the third protrusion 705 is not provided, when the fusion splicing of the first optical fiber and the local oscillator optical fiber fails and needs to be fused again, the length of the first optical fiber that needs to be cut off may be 100 mm; when the third protrusion 705 is provided, when the fusion splicing of the first optical fiber and the local oscillator optical fiber fails and needs to be fused again, the length of the first optical fiber that needs to be cut off may be 50 mm.

In order to fix the first optical fiber, the local oscillator optical fiber, the transmitting optical fiber and the receiving optical fiber in the optical fiber winding rack 700, a plurality of protrusions of the optical fiber winding rack 700 and the side of the optical fiber winding rack 700 are provided with a snap-in strip, one end of the snap-in strip is connected to the surface of the protrusion of the optical fiber winding rack 700, and the other end of the snap-in strip is connected to the surface of the side of the optical fiber winding rack 700.

The presence of the card strip fixes the first optical fiber, local oscillator optical fiber, transmitting optical fiber and receiving optical fiber in the optical fiber winding rack 700, avoiding optical fiber damage caused by the first optical fiber, local oscillator optical fiber, transmitting optical fiber and receiving optical fiber detaching from the optical fiber winding rack 700.

As shown in FIGS. 4 to 9 , in some embodiments, the inner surface of the optical fiber winding rack 700 is provided with a third storage groove 709 and a fourth storage groove 710, both of which are formed by the inner surface of the optical fiber winding rack 700 being recessed inwardly, the third storage groove 709 being recessed inwardly relative to the fourth storage groove 710, the third storage groove 709 being located at one end of the optical fiber winding rack 700 close to the light source 401, and the fourth storage groove 710 being located at one end of the optical fiber winding rack 700 away from the light source 401. The third storage groove 709 is configured to place the coherent component 500, and the fourth storage groove 710 is configured to place the DSP chip 600. The shape of the third storage groove 709 is the same as that of the coherent component 500.

As shown in FIGS. 4 to 9 , in some embodiments, the inner surface of the optical fiber winding rack 700 is further provided with a fifth storage groove 711. The fifth storage groove 711 is closer to the light source 401 than the third storage groove 709, and the fifth storage groove 711 is configured to place the interface of the coherent component 500, and the third storage groove 709 is more recessed than the fifth storage groove 711.

Figure 10 is a structural diagram of a light source provided according to some embodiments of the present disclosure. Figure 11 is an exploded view of a light source provided according to some embodiments of the present disclosure. Figure 12 is a structural diagram of a first support plate provided according to some embodiments of the present disclosure. Figure 13 is a structural diagram of a first angle of a second support plate provided according to some embodiments of the present disclosure. Figure 14 is a structural diagram of a second angle of a second support plate provided according to some embodiments of the present disclosure. Figure 15 is a structural diagram of a second circuit board provided according to some embodiments of the present disclosure. As shown in Figures 4 to 15, in some embodiments, the light source component 400 includes a light source 401, a first support plate 402, a second support plate 403, and a second circuit board 302.

A plurality of metal pins are disposed on the side of the light source 401, and a plurality of pin pads are disposed on the side of the second circuit board 302. The metal pins and the pin pads are disposed correspondingly, and the light source 401 and the second circuit board 302 are electrically connected through the metal pins and the pin pads.

Two first through holes 3022 are provided on the second circuit board 302, and two second through holes 4032 are provided on the second support plate 403. The first through holes 3022 and the second through holes 4032 are provided correspondingly, and the first through holes 3022 and the second through holes 4032 are connected by screws to realize the connection between the second circuit board 302 and the second support plate 403.

The second support plate 403 is further provided with a third through hole 4033 , and the first support plate 402 is provided with a fourth through hole 4024 . The third through hole 4033 and the fourth through hole 4024 are provided correspondingly, and the third through hole 4033 and the fourth through hole 4024 are connected by screws to realize the connection between the first support plate 402 and the second support plate 403 .

A fifth through hole 4031 is also provided on the second support plate 403, and the fifth through hole 4031 is correspondingly provided to the through hole on the cover plate 2011 of the upper shell 201, and the fifth through hole 4031 is connected to the through hole on the cover plate 2011 of the upper shell 201 by screws to realize the connection between the second support plate 403 and the upper shell 201.

The first support plate 402 is also provided with a support plate body 4022, a first support protrusion 4021 and a second support protrusion 4023. The first support protrusion 4021 and the second support protrusion 4023 are both obtained by the upward protrusion of the support plate body 4022. The first support protrusion 4021 is more protruding than the second support protrusion 4023. The first support protrusion 4021 is provided with a fourth through hole 4024, and the second support protrusion 4023 is connected to the lower surface of the light source 401.

The second supporting protrusion 4023 is a heat dissipation adhesive which not only connects the light source 401 to the first supporting plate 402 but also dissipates the heat of the light source 401 .

The second support plate 403 is further provided with a sixth storage slot 4034 and a seventh storage slot 4035. The sixth storage slot 4034 and the seventh storage slot 4035 are both formed by the inner surface of the second support plate 403 being recessed inwardly, the sixth storage slot 4034 and the seventh storage slot 4035 are partially connected, the sixth storage slot 4034 is connected to the second circuit board 302, and the seventh storage slot 4035 is connected to the upper surface of the light source 401.

The second circuit board 302 has a first notch 3021 on one side facing the light source 401. The side where the first notch 3021 is located has a plurality of pin pads. The first support plate 402 and the light source 401 can be placed in the first notch 3021. The length of the first notch 3021 is greater than that of the light source 401.

In some embodiments, the light source component 400 further includes a heat dissipation pad 404. The heat dissipation pad 404 is located between the cover plate 2011 of the upper housing 201 and the second support plate 403, and is configured to dissipate the heat of the light source component 400 outside the optical module through the upper housing 201.

Generally, the light source uses a semiconductor gain chip and a separation filter to achieve wavelength adjustment. However, since multiple separation components need to be coupled and packaged in the light source, and these separation components occupy a large space, the size of the light source is large and does not meet production requirements.

In some embodiments of the present disclosure, a light source is proposed. The light source includes a semiconductor gain chip and a silicon photonic chip, and the semiconductor gain chip is configured to emit a light beam in a wavelength range. The silicon photonic chip integrates a wavelength tunable optical component and a wavelength locking optical component, and the wavelength tunable optical component is configured to filter out a specific wavelength light beam from a light beam in a wavelength range emitted by the semiconductor gain chip to achieve a wavelength tunable function; the wavelength locking optical component is configured to determine whether the wavelength of the specific wavelength light beam deviates from a preset wavelength to achieve a wavelength locking function. If the wavelength of the specific wavelength light beam deviates from the preset wavelength, the refractive index of the wavelength tunable optical component is adjusted so that the wavelength of the specific wavelength light beam filtered out by the wavelength tunable optical component does not deviate from the preset wavelength. The semiconductor gain chip and the silicon photonic chip form a resonant cavity, and the specific wavelength light beam is reflected back and forth between the semiconductor gain chip and the silicon photonic chip, so that the specific wavelength light beam is stably output by the semiconductor gain chip. The silicon photonic chip integrates a wavelength tunable optical component and a wavelength locking optical component, which not only enables the light source to achieve wavelength tunability and wavelength locking functions; but also saves space, so that the size of the light source is small to meet production requirements.

FIG. 16 is a structural diagram of a light source provided according to some embodiments of the present disclosure. FIG. 17 is an exploded view of a light source provided according to some embodiments of the present disclosure. FIG. 18 is a structural diagram of a light source provided according to some embodiments of the present disclosure with the upper cover, optical components and internal optical fiber adapter removed. FIG. 19 is an exploded view of a light source provided according to some embodiments of the present disclosure with the upper cover, optical components and internal optical fiber adapter removed. FIG. 20 is a structural diagram of a second fixing frame provided according to some embodiments of the present disclosure. FIG. 21 is a structural diagram of a first fixing frame provided according to some embodiments of the present disclosure. FIG. 22 is a first cross-sectional view of a light source provided according to some embodiments of the present disclosure. FIG. 23 is a second cross-sectional view of a light source provided according to some embodiments of the present disclosure. Referring to FIGS. 16-23, in some embodiments, the light source 401 includes a first fixing frame 4011, a second fixing frame 4012, an upper cover 4013, a base 4014 and an internal optical fiber adapter 4016. The first fixing frame 4011 is provided with a second notch 40111 and an insertion hole 40112, which are respectively located at two ends of the first fixing frame 4011, and the second fixing frame 4012 is clamped at the second notch 40111 of the first fixing frame 4011, and the internal optical fiber adapter 4016 is placed in the insertion hole 40112. A plurality of metal pins 4015 are provided on one side of the second fixing frame 4012 close to the second circuit board 302. The plurality of metal pins 4015 are welded to a plurality of pin pads on the second circuit board 302. The first fixing frame 4011 and the second fixing frame 4012, the upper cover 4013 and the base 4014 surround a cavity, and an optical component 405 is provided in the cavity.

In some embodiments, two semiconductor coolers 40141 are disposed on the base 4014, a ceramic substrate 40142 is disposed on the semiconductor cooler 40141, and an optical component 405 is disposed on the ceramic substrate 40142. The optical component 405 is placed on the ceramic substrate 40142 to facilitate controlling the temperature of the optical component 405.

In some embodiments, the optical component 405 includes a semiconductor gain chip 4051, a silicon photonic chip 4052, a first lens 4053, an isolator 4054, a second lens 4055, a semiconductor amplifier chip 4056, a third lens 4057, a beam splitter 4058, a first power monitor 4059 and a fourth lens 4060.

The semiconductor gain chip 4051 is located between the fourth lens 4060 and the first lens 4053, and is configured to emit a light beam in a wavelength range. The silicon photonic chip 4052 is located on one side of the fourth lens 4060, and is configured to receive a light beam in a wavelength range, and to filter out a light beam with a specific wavelength from the light beam in a wavelength range; and is also configured to emit the light beam with a specific wavelength into the semiconductor gain chip 4051. The silicon photonic chip 4052 and the semiconductor gain chip 4051 form a resonant cavity, and the light beam with a specific wavelength is reflected back and forth between the silicon photonic chip 4052 and the semiconductor gain chip 4051, so that the light beam with a specific wavelength is stably output by the semiconductor gain chip.

The silicon photonic chip 4052 is configured to filter out a specific wavelength beam from a beam of light in a wavelength range. The silicon photonic chip 4052 integrates a wavelength tunable optical component and a wavelength locking optical component. The wavelength tunable optical component is configured to filter out a specific wavelength beam from a beam of light in a wavelength range emitted by the semiconductor gain chip to achieve a wavelength tunable function; the wavelength locking optical component is configured to determine whether the specific wavelength beam deviates from the preset wavelength beam to achieve a wavelength locking function. If the specific wavelength beam deviates from the preset wavelength beam, the refractive index of the wavelength tunable optical component is adjusted so that the specific wavelength beam filtered out by the wavelength tunable optical component does not deviate from the preset wavelength beam. The semiconductor gain chip and the silicon photonic chip form a resonant cavity, and the specific wavelength beam is reflected back and forth between the semiconductor gain chip and the silicon photonic chip, so that the specific wavelength beam is stably output by the semiconductor gain chip. The silicon photonic chip integrates a wavelength tunable optical component and a wavelength locking optical component, which not only enables the light source to achieve wavelength tunability and wavelength locking functions; it also saves space, making the size of the light source smaller to meet production needs.

The first lens 4053 is located between the semiconductor gain chip 4051 and the isolator 4054, and is configured to collimate the light beam of a specific wavelength. The first lens 4053 is a collimating lens, and the collimating lens collimates the light beam of a specific wavelength.

The isolator 4054 is located between the first lens 4053 and the second lens 4055 . The isolator 4054 is configured to prevent the light beam incident on the second lens 4055 from being reflected back into the semiconductor gain chip 4051 , so as to reduce the impact of light path reflection and further reduce the noise level of the light source component 400 .

The second lens 4055 is located between the isolator 4054 and the semiconductor amplifier chip 4056, and is configured to converge the specific wavelength light beam passing through the isolator 4054 and couple it into the semiconductor amplifier chip 4056. The second lens 4055 is a converging lens, which converges the specific wavelength light beam passing through the isolator 4054 and couples it into the semiconductor amplifier chip 4056.

The semiconductor amplifier chip 4056 is located between the second lens 4055 and the third lens 4057 . The semiconductor amplifier chip 4056 is configured to amplify the power of the light beam of a specific wavelength to increase the optical power of the light beam of the specific wavelength.

Since the semiconductor amplifier chip 4056 performs power amplification, the optical power of the light beam of a specific wavelength emitted by the light source provided with the semiconductor amplifier chip 4056 is much higher than the optical power of the light beam emitted by the light source not provided with the semiconductor amplifier chip 4056 .

The third lens 4057 is located between the semiconductor amplifier chip 4056 and the beam splitter 4058, and is configured to collimate the light beam of a specific wavelength. The third lens 4057 is a collimating lens, and the collimating lens collimates the light beam of a specific wavelength amplified by the semiconductor amplifier chip 4056.

The beam splitter 4058 is located between the third lens 4057 and the internal fiber adapter 4016 . The beam splitter 4058 is configured to split the light beam of a specific wavelength into two paths, one path is coupled to the first power monitor 4059 , and the other path is coupled to the internal fiber adapter 4016 .

A beam splitter is an optical device that can split a beam of light into two or more beams, usually made of a metal film or a dielectric film. The most common shape is a cube, made of two triangular glass prisms, which are glued together on a substrate using a polyester, epoxy or polyurethane adhesive. The thickness of the resin layer is adjusted so that half of the light (of a certain wavelength) incident through one "port" (i.e., the face of the cube) is reflected, and the other half is transmitted due to total internal reflection. Polarizing beam splitters such as Wollaston prisms use birefringent materials to separate light into beams of different polarizations. Another design uses a half-silvered mirror, a piece of glass or plastic, with a transparent thin metal coating, now usually aluminum deposited by aluminum vapor. The thickness of the deposit is controlled so that part (usually half) of the light that is incident at a 45-degree angle and is not absorbed by the coating is transmitted, and the rest is reflected.

The first power monitor 4059 is located between the beam splitter 4058 and the second fixing frame 4012. The first power monitor 4059 is configured to monitor the optical power of the specific wavelength light beam in real time. When the optical power of the specific wavelength light beam is less than the preset optical power range, the semiconductor amplifier is increased. The magnification factor of the semiconductor amplifying chip 4056 is increased so that the optical power of the light beam with a specific wavelength is within a preset optical power range. When the optical power of the light beam with a specific wavelength is greater than the preset optical power range, the magnification factor of the semiconductor amplifying chip 4056 is reduced so that the optical power of the light beam with a specific wavelength is within the preset optical power range.

In some embodiments, the optical power of the specific wavelength light beam is monitored in real time by the first power monitor 4059 and the amplification factor of the semiconductor amplifier chip 4056 is adjusted so that the optical power of the specific wavelength light beam emitted by the light source is within a preset optical power range.

The fourth lens 4060 is located between the semiconductor gain chip 4051 and the silicon photonic chip 4052 . The fourth lens 4060 is configured to collimate the light beam within a wavelength range output by the semiconductor gain chip 4051 .

In some embodiments, a sixth lens 40161 and an optical window 40162 are disposed in the internal optical fiber adapter 4016. The optical window 40162 is closer to the beam splitter 4058 than the sixth lens 40161. The specific wavelength light beam is split into two paths by the beam splitter 4058, one of which is incident on the internal optical fiber adapter 4016 through the optical window 40162 and is focused and coupled into the optical fiber ferrule of the internal optical fiber adapter 4016 through the sixth lens 40161.

According to the above-mentioned introduction of the optical component 405 and the internal fiber optic adapter 4016, the optical component 405 can be divided into the following types.

Fig. 24 is a light path diagram of the first optical component provided according to some embodiments of the present disclosure. As shown in Fig. 24, in some embodiments, the optical component 405 includes a semiconductor gain chip 4051, a silicon photonic chip 4052 and a first lens 4053, wherein the semiconductor gain chip 4051 is located between the silicon photonic chip 4052 and the first lens 4053, and the first lens 4053 is located between the semiconductor gain chip 4051 and the internal optical fiber adapter.

All components in the light source except the silicon photonic chip 4052 are placed on one side of the silicon photonic chip 4052, which effectively saves the space of the light source, makes the size of the light source smaller, and makes it easier for the light source to meet production needs.

The semiconductor gain chip 4051 is configured to emit a light beam in a wavelength range. The silicon photonic chip 4052 is configured to receive a light beam in a wavelength range and screen a light beam of a specific wavelength from the light beams in a wavelength range; and is also configured to inject the light beam of a specific wavelength into the semiconductor gain chip 4051. The semiconductor gain chip 4051 and the silicon photonic chip 4052 form a resonant cavity, and the light beam of a specific wavelength is reflected back and forth between the semiconductor gain chip 4051 and the silicon photonic chip 4052, so that the light beam of a specific wavelength is stably output by the semiconductor gain chip. The first lens 4053 is configured to couple the light beam of a specific wavelength emitted by the semiconductor gain chip 4051 into the internal optical fiber adapter.

The semiconductor gain chip 4051 and the silicon photonic chip 4052 form a resonant cavity, and the light beam of a specific wavelength is reflected back and forth between the semiconductor gain chip 4051 and the silicon photonic chip 4052, so that the light beam of a specific wavelength is stably output by the semiconductor gain chip. Since the semiconductor gain chip is made of III-V group gain materials, it includes two optical waveguide end faces, one of which adopts an inclined waveguide structure and is coated with an anti-reflection film to achieve extremely low light field reflectivity, and is configured to couple with the input coupler of the silicon photonic chip, so that the light beam of a specific wavelength is reflected back and forth between the semiconductor gain chip and the silicon photonic chip; the other end face adopts a straight waveguide structure and is coated with a reflective film with a certain reflectivity to achieve light field reflection and transmission functions, so that when the light beam of a specific wavelength oscillates to a certain degree, the semiconductor gain chip 4051 emits a light beam of a specific wavelength.

FIG25 is a light path diagram of a second optical component provided according to some embodiments of the present disclosure. As shown in FIG25 , in some embodiments, the optical component 405 further includes an isolator 4054 and a second lens 4055, the isolator 4054 is located between the first lens 4053 and the second lens 4055, and the second lens 4055 is located between the isolator 4054 and the internal optical fiber adapter 4016.

FIG26 is an optical path diagram of a third optical component provided according to some embodiments of the present disclosure. As shown in FIG26 , in some embodiments, the optical component 405 further includes a semiconductor amplifier chip 4056 and a third lens 4057, wherein the semiconductor amplifier chip 4056 is located between the second lens 4055 and the third lens 4057, and the third lens 4057 is located between the semiconductor amplifier chip 4056 and the internal optical fiber adapter 4016.

FIG27 is a light path diagram of a fourth optical component provided according to some embodiments of the present disclosure. As shown in FIG27 , in some embodiments, the optical component 405 further includes a beam splitter 4058 and a first power monitor 4059, wherein the beam splitter 4058 is located between the third lens 4057 and the internal fiber adapter 4016, and the first power monitor 4059 is located on one side of the beam splitter 4058.

FIG28 is a light path diagram of a fifth optical component provided according to some embodiments of the present disclosure. As shown in FIG28 , in some embodiments, the optical component 405 further includes a fourth lens 4060, and the fourth lens 4060 is located between the semiconductor gain chip 4051 and the silicon photonic chip 4052. The semiconductor gain chip 4051 is located between the fourth lens 4060 and the first lens 4053 .

FIG29 is a structural diagram of a first silicon photonic chip provided according to some embodiments of the present disclosure. FIG30 is a filtering curve diagram of a wavelength sensor provided according to some embodiments of the present disclosure. As shown in FIG29 and FIG30, in some embodiments, the first silicon photonic chip includes an input coupler 40521, a directional coupler 40522, a phase modulator 40523, a first power divider 40524, a first filter 40526, a second filter 40527, a fourth power monitor 40529, a wavelength sensor 405216, a vertical coupler 405217, a fifth power monitor 405218, and a sixth power monitor 405219. The input coupler 40521, the directional coupler 40522, the phase modulator 40523, the first power divider 40524, the first filter 40526, the second filter 40527, the fourth power monitor 40529, the wavelength sensor 405216, the vertical coupler 405217, the fifth power monitor 405218 and the sixth power monitor 405219 are all formed by silicon photonic chips using complementary metal oxide semiconductor (CMOS) technology.

The input coupler 40521 is disposed at one end face of the silicon photonic chip 4052, and is configured to receive a light beam of a wavelength range emitted by the semiconductor gain chip 4051. The input coupler 40521 is also configured to output the light beam of a specific wavelength screened by the silicon photonic chip 4052 to the outside of the silicon photonic chip 4052.

The specific wavelength light beam is reflected back and forth between the silicon photonic chip 4052 and the semiconductor gain chip 4051, so that the semiconductor gain chip 4051 and the silicon photonic chip 4052 form a resonant cavity, thereby achieving stable output of the specific wavelength light beam by the semiconductor gain chip.

In some embodiments, the input coupler 40521 adopts an inclined waveguide design, that is, the optical waveguide of the input coupler 40521 is set at a certain angle to the end face of the silicon photonic chip 4052. In this way, when the light beam emitted by the semiconductor gain chip enters the input coupler 40521 from the upper right, part of the light beam may be reflected at the end face of the silicon photonic chip 4052. The reflected light beam will be emitted from the upper right instead of returning to the semiconductor gain chip along the original path, thereby reducing the impact of the light reflection from the end face of the silicon photonic chip on the semiconductor gain chip.

Since one end face of the semiconductor gain chip adopts an inclined waveguide structure, the input coupler 40521 is arranged in parallel with the inclined waveguide structure of the semiconductor gain chip in the direction of the optical path, so that the semiconductor gain chip matches the silicon photonic chip, and the reflection of the light field of the input coupler 40521 is reduced to improve the quality of the light beam. The input coupler 40521 can be arranged in parallel with the inclined waveguide structure of the semiconductor gain chip in the direction of the optical path, so that the output angle of the specific wavelength light beam output by the input coupler 40521 is 20°.

The directional coupler 40522 is located between the phase modulator 40523 and the input coupler 40521, and is configured to split the light beam. The first end of the directional coupler 40522 is connected to the input coupler 40521 through an optical waveguide, the second end of the directional coupler 40522 is connected to the phase modulator 40523 through an optical waveguide, the third end of the directional coupler 40522 is connected to the fourth power monitor 40529 through an optical waveguide, and the fourth end of the directional coupler 40522 is connected to the first end of the wavelength sensor 405216 through an optical waveguide. The directional coupler 40522 splits the input specific wavelength light beam into three light beams. The first light beam is transmitted to the input coupler 40521 via the first optical waveguide, and then output to the outside of the silicon photonic chip 4052 via the input coupler 40521; the second light beam is transmitted to the fourth power monitor 40529 via the optical waveguide, so that the fourth power monitor 40529 can monitor the optical power of the specific wavelength light beam; the third light beam is transmitted to the wavelength sensor 405216 via the optical waveguide for wavelength locking.

The phase modulator 40523 is located between the directional coupler 40522 and the first power divider 40524. The phase modulator 40523 is configured to adjust the wavelength of the light beam supported by the resonant cavity so as to make the light beam with a specific wavelength screened out by the first filter 40526 and the second filter 40527 coincide with the light beam in the resonant cavity. The first end of the phase modulator 40523 is connected to the second end of the directional coupler 40522 through an optical waveguide, and the second end of the phase modulator 40523 is connected to the first power divider 40524 through an optical waveguide. A heater is provided on the phase modulator 40523. By changing the heater, the cavity length of the phase modulator 40523 is changed, and then the cavity length of the resonant cavity is changed, so that a light beam with a certain wavelength supported by the resonant cavity coincides with the light beam with a specific wavelength screened out by the two filters.

The first power divider 40524 is located between the first filter 40526 and the phase modulator 40523. The first power divider 40524 is configured to split the light beam. The first power divider 40524 is also configured to synthesize the light beam.

The first end of the first power divider 40524 is connected to the second end of the phase modulator 40523 through an optical waveguide. The first power divider 40524 is connected to the first filter 40526 via an optical waveguide, and the third end of the first power divider 40524 is connected to the second filter 40527 via an optical waveguide.

A power divider generally refers to a power distributor. A power divider is a device that divides one input signal energy into two or more outputs of equal or unequal energy. It can also combine multiple signal energies into one output, which is also called a combiner.

The first power divider 40524 can divide the light beam inputted by the phase modulator 40523 into two light beams, wherein one light beam first passes through the first filter 40526 and then through the second filter 40527, and the other light beam first passes through the second filter 40527 and then through the first filter 40526. The first power divider 40524 can also combine a light beam with a specific wavelength screened out by the first filter 40526 and then through the second filter 40527 and a light beam with a specific wavelength screened out by the second filter 40527 and then through the first filter 40526 into one light beam with a specific wavelength.

The splitting ratio of the first power divider 40524 is 50%:50%. The first power divider 40524 splits one beam into two beams at 50%:50%. The two beams are filtered by the first filter 40526 and the second filter 40527 and then return to the first power divider 40524. According to the principle of optical path reversibility, theoretically, except for the loss of the first filter 40526, the second filter 40527 and the optical waveguide, the other losses are zero. The first power divider 40524 splits one beam into two beams at 20%:80%. The two beams are filtered by the first filter 40526 and the second filter 40527 and then return to the first power divider 40524. According to the principle of optical path reversibility, theoretically, except for the loss of the first filter 40526, the second filter 40527 and the optical waveguide, the other losses are greater than zero. Therefore, in order to minimize the beam loss, in some embodiments, the splitting ratio of the first power divider 40524 is 50%:50%.

The first filter 40526 cooperates with the second filter 40527 to filter a specific wavelength light beam from a light beam in a wavelength range emitted by the semiconductor gain chip 4051. The first filter is coupled to the power divider through the first straight optical waveguide, the second filter is coupled to the first filter through the second straight optical waveguide, and the second filter is coupled to the first power divider through the third straight optical waveguide. The first filter 40526 and the second filter 40527 are both micro-ring structures, but they have different circumferences, so that the wavelengths of the light beams filtered by the first filter 40526 and the second filter 40527 are different. Based on the vernier effect, only when the wavelength of the light beam filtered by the first filter 40526 coincides with the wavelength of the light beam filtered by the second filter 40527, the light beam filtered by the silicon photonic chip 4052 is a specific wavelength light beam.

The second end of the first power divider 40524 is connected to the first straight optical waveguide, the first straight optical waveguide is coupled to the first filter 40526, the first filter 40526 and the second filter 40527 are coupled to the second straight optical waveguide respectively, the second filter 40527 is coupled to the third straight optical waveguide, and the second end of the first power divider 40524 is connected to the third straight optical waveguide.

The process of the first filter 40526 and the second filter 40527 screening a light beam of a specific wavelength is as follows:

A light beam in a wavelength range is incident through the input end of the first straight optical waveguide (a section close to the first power divider 40524). When the light beam is transmitted to the first coupling region between the first straight optical waveguide and the first filter 40526, part of the light beam is coupled into the first filter 40526, and the remaining part of the light beam is output from the output end of the first straight optical waveguide (far away from the first power divider 40524). When the light beam propagating in the first filter 40526 passes through the second coupling region formed by the second straight optical waveguide and the first filter 40526, part of the light beam is coupled into the second straight optical waveguide, and the remaining part of the light beam is still propagating in the first filter 40526. When the light beam propagating in the first filter 40526 meets the resonance condition mλ=nl of the first filter 40526, resonance occurs, thereby obtaining coherent enhancement, and the optical power of the light beam obtained by the second straight optical waveguide from the first filter 40526 will also increase, and the light beam that does not meet the resonance condition is output at the output end of the first straight optical waveguide. Wherein, λ is the wavelength of the light beam, l is the circumference of the first filter, n is the effective refractive index of the first filter, and m is a positive integer. That is, only the light beam that meets the resonance condition of the first filter 40526 can be screened out by the first filter 40526 and coupled to the second straight optical waveguide.

When the light beam is transmitted to the third coupling region between the second straight optical waveguide and the second filter 40527, part of the light beam is coupled into the second filter 40527, and the remaining part of the light beam is output from the second output end of the second straight optical waveguide. When the light beam propagating in the second filter 40527 passes through the fourth coupling region formed by the third straight optical waveguide and the second filter 40527, part of the light beam is coupled into the third straight optical waveguide, and the remaining part of the light beam is still propagating in the second filter 40527. When the light beam propagating in the second filter 40527 satisfies the resonance condition mλ=nl of the second filter 405276, resonance occurs, thereby obtaining coherent enhancement, and the optical power of the light beam obtained by the third straight optical waveguide from the second filter 40527 will also increase, while the light that does not meet the resonance condition is output at the second output end of the second straight optical waveguide. Wherein, λ is the wavelength of the light beam, l is the wavelength of the first straight optical waveguide, and nl is the wavelength of the second filter 405276. The circumference of the second filter, n is the effective refractive index of the second filter, and m is a positive integer. That is, only the light beam that meets the resonance condition of the second filter 40527 can be screened out by the second filter 40527 and coupled to the third straight optical waveguide. At this time, the light beam received by the third straight optical waveguide is a light beam of a specific wavelength.

The above is the process of filtering out a light beam of a specific wavelength by first passing through the first filter 40526 and then through the second filter 40527. Similarly, the process of filtering out a light beam of a specific wavelength by first passing through the second filter 40527 and then through the first filter 40526 is as follows:

A light beam in a wavelength range is incident through the input end of the third straight optical waveguide (close to the first power divider 40524). When the light beam is transmitted to the fourth coupling region between the third straight optical waveguide and the second filter 40527, part of the light beam is coupled into the second filter 40527, and the remaining part of the light beam is output from the output end of the third straight optical waveguide (far away from the first power divider 40524). When the light beam propagating into the second filter 40527 passes through the third coupling region formed by the second straight optical waveguide and the second filter 40527, part of the light beam is coupled into the second straight optical waveguide, and the remaining part of the light beam is still propagating in the second filter 40527. When the light beam propagating in the second filter 40527 meets the resonance condition mλ=nl of the second filter 40527, resonance occurs, thereby obtaining coherent enhancement, and the optical power of the light beam obtained by the second straight optical waveguide from the second filter 40527 will also increase, and the light that does not meet the resonance condition is output at the output end of the third straight optical waveguide.

When the light beam is transmitted to the second coupling region between the second straight optical waveguide and the first filter 40526, part of the light beam is coupled into the first filter 40526, and the remaining part of the light beam is output from the first output end of the second straight optical waveguide. When the light beam propagating in the first filter 40526 passes through the first coupling region formed by the first straight optical waveguide and the first filter 40526, part of the light beam is coupled into the first straight optical waveguide, and the remaining part of the light beam is still propagating in the first filter 40526. When the light beam propagating in the first filter 40526 satisfies the resonance condition mλ=nl of the first filter 40526, resonance occurs, thereby obtaining coherent enhancement, and the optical power of the light beam obtained by the first straight optical waveguide from the first filter 40526 will also increase, while the light that does not meet the resonance condition is output from the first output end of the second straight optical waveguide. At this time, the light beam received by the first straight optical waveguide is a light beam of a specific wavelength.

The first filter 40526 and the second filter 40527 are both micro-ring structures, but they have different circumferences. According to the resonance condition, the wavelengths of the light beams filtered out by the first filter 40526 and the second filter 40527 are different. Based on the vernier effect, only when the light beam filtered out by the first filter 40526 coincides with the light beam filtered out by the second filter 40527, the light beam filtered out by the silicon photonic chip 4052 is a light beam of a specific wavelength.

The first filter 40526 , the second filter 40527 and the phase modulator 40523 constitute a wavelength tunable optical component. The wavelength tunable optical component is configured to filter out a specific wavelength light beam from a light beam in a wavelength range emitted by the semiconductor gain chip 4051 .

The first filter 40526 and the second filter 40527 can filter a specific wavelength light beam from a light beam in a wavelength range emitted by the semiconductor gain chip 4051. This wavelength value is determined by the characteristics of the first filter 40526 and the second filter 40527. However, the resonant cavity composed of the semiconductor gain chip and the silicon photonic chip will select to support multiple light beams of different wavelengths according to its own cavity structure. The multiple wavelengths of light beams supported by the resonant cavity do not necessarily coincide with the light beams of the specific wavelengths filtered out by the two filters. If the multiple wavelengths of light beams supported by the resonant cavity do not coincide with the specific wavelength light beams filtered out by the two filters, the cavity length of the phase modulator can be changed by changing the refractive index of the phase modulator, thereby changing the cavity length of the resonant cavity, so that a certain wavelength of light beam supported by the resonant cavity coincides with the specific wavelength light beam, so that the resonant cavity emits a specific wavelength light beam.

The fourth power monitor 40529 is configured to monitor the optical power of the light beam of a specific wavelength, so as to monitor the optical power of the light beam of a specific wavelength coupled by the semiconductor gain chip 4051. The fourth power monitor 40529 is connected to the third end of the directional coupler 40522 through an optical waveguide. The fourth power monitor 40529 monitors the optical power of the second light beam separated by the directional coupler 40522, and further monitors the optical power of the first light beam separated by the directional coupler 40522 and input to the semiconductor gain chip 4051.

When the semiconductor gain chip 4051 couples the optical power of a light beam of a specific wavelength, the photocurrent value flowing through the fourth power monitor 40529 is monitored in real time. A fixed current is applied to the semiconductor gain chip 4051, and the relative positions of the semiconductor gain chip 4051 and the silicon photonic chip 4052 are adjusted, so that the photocurrent value flowing through the fourth power monitor 40529 varies with the coupling position. Among them, the position with the largest photocurrent is the position with the largest coupled optical power.

The wavelength sensor 405216 has a first end connected to the vertical coupler 405217 through an optical waveguide, and a second end connected to the fifth power monitor 405218 and the sixth power monitor 405219 through an optical waveguide. The wavelength sensor 405216 is configured to measure whether a specific wavelength beam changes, that is, whether the specific wavelength beam deviates from a preset wavelength beam.

The wavelength sensor 405216 has a temperature-insensitive characteristic. When the temperature of the silicon photonic chip changes, the filtering curve of the wavelength sensor 405216 remains basically unchanged. Therefore, the wavelength sensor 405216 can be used as a device for measuring whether a specific wavelength light beam changes.

The fifth power monitor 405218 and the sixth power monitor 405219 are configured to monitor the optical power of the output light beam at the output end of the wavelength sensor 405216.

The wavelength sensor 405216, the fifth power monitor 405218 and the sixth power monitor 405219 form a wavelength locking optical component to achieve wavelength locking. The optical power monitored by the fifth power monitor 405218 is recorded as P _x , and the optical power monitored by the sixth power monitor 405219 is recorded as P _y . The wavelength change direction of the specific wavelength light beam is characterized according to P _x /P _y . The offset direction of the wavelength of the specific wavelength light beam is known according to P _x /P _y , and P _x /P _y is restored to the preset value by adjusting the wavelength tunable optical component in the silicon photonic chip 4052. When P _x /P _y is restored to the preset value, the selected specific wavelength light beam is the preset wavelength light beam.

The wavelength change direction of the light beam of a specific wavelength is characterized by P _x /P _y . According to the filtering curve diagram of the wavelength sensor 405216, it can be known that the optical power (light intensity, equal to the optical power per unit area, referred to as intensity) of the light beam output from the output end of the wavelength sensor 405216 is in a cosine function relationship with the wavelength, that is, the optical power monitored by the fifth power monitor 405218 and the sixth power monitor 405219 are both cosine functions, and the two are in a complementary relationship. Since the optical power monitored by the fifth power monitor 405218 and the sixth power monitor 405219 are both cosine functions, and the two are in a complementary relationship, and the wavelength sensor 405216 has a temperature-insensitive characteristic, the wavelength change direction of the light beam of a specific wavelength can be characterized by P _x /P _y .

For example, the wavelength of the preset wavelength light beam is set to 1549.7. When the wavelength of the input light beam at the input end of the wavelength sensor 405216 is 1549.7nm, _Px / _Py is equal to 1; when the wavelength of the input light beam at the input end of the wavelength sensor 405216 is 1549.8nm, _Px / _Py is much greater than 1, indicating that 1549.8nm deviates from the preset wavelength.

In some embodiments, the wavelength change direction of the light beam with a specific wavelength may be characterized according to _Px /( _Px + _Py ); or, the wavelength change direction of the light beam with a specific wavelength may be characterized according to _Py /( _Px + _Py ).

The deviation direction of the wavelength of the specific wavelength light beam is known according to P _x /P _y , and P _x /P _y is restored to the preset value by adjusting the wavelength tunable optical component in the silicon photonic chip 4052. A heater is provided on the first filter 40526 and the second filter 40527. When P _x /P _y deviates from the preset value, the first filter 40526 or the second filter 40527, or the heaters of the first filter 40526 and the second filter 40527 are adjusted to change the refractive index of the filter, thereby changing the wavelength of the light beam passing through the filter, so that the light beam screened by the wavelength tunable optical component is a specific wavelength light beam.

The vertical coupler 405217 is configured to couple the light beam outside the silicon photonic chip 4052 into the silicon photonic chip 4052 to test the filtering characteristics of the wavelength sensor 405216. Due to the material and process errors in the actual processing of the silicon photonic chip, the phase of the wavelength sensor 405216 is easily deviated, thereby changing the filtering characteristics of the wavelength sensor 405216. When the filtering characteristics of the wavelength sensor 405216 change, it is considered that the specific wavelength light beam is not a preset wavelength light beam. In order to avoid this problem, it is necessary to test the filtering characteristics of the wavelength sensor 405216 before the optical module is used. The preset wavelength light beam outside the silicon photonic chip 4052 is coupled into the silicon photonic chip 4052 via the vertical coupler 405217, and is incident on the wavelength sensor 405216 via the optical waveguide between the vertical coupler 405217 and the wavelength sensor 405216. When P _x /P _y deviates from a preset value, the phase difference of the wavelength sensor 405216 is changed by adjusting a heater on one of the modulation arms of the wavelength sensor 405216 to restore the filtering characteristics of the wavelength sensor 405216 .

As shown in FIG. 29 , the wavelength sensor 405216 includes a first beam splitter 4052161 , a first modulation arm 4052163 , a second modulation arm 4052164 , and a second beam splitter 4052162 .

The first end of the first optical splitter 4052161 is connected to the fourth end of the directional coupler 40522 and the vertical coupler 405217 through an optical waveguide The first end of the first optical splitter 4052161 is connected to the first end of the first modulation arm 4052163 and the second modulation arm 4052164. The first optical splitter 4052161 is configured to split the light beam transmitted by the directional coupler 40522 or the vertical coupler 405217 into two beams, and transmit the two light beams to the first modulation arm 4052163 and the second modulation arm 4052164 respectively.

The first end of the first splitter 4052161 includes a first input port and a second input port, the second end of the first splitter 4052161 includes a first output port and a second output port, the first input port is connected to the fourth end of the directional coupler 40522 through an optical waveguide, the second input port is connected to the vertical coupler 405217 through an optical waveguide, the first output port is connected to the first end of the first modulation arm 4052163, and the second output port is connected to the first end of the second modulation arm 4052164.

The second optical splitter 4052162 has a first end connected to the second end of the first modulation arm 4052163 and the second modulation arm 4052164, respectively, and a second end connected to the fifth power monitor 405218 and the sixth power monitor 405219 through an optical waveguide. The second optical splitter 4052162 is configured to couple the light beams on the first modulation arm 4052163 and the second modulation arm 4052164 into one light beam. The second optical splitter 4052162 is also configured to split the one light beam into two beams. One light beam enters the fifth power monitor 405218 through the optical waveguide to be monitored by the fifth power monitor 405218; the other light beam enters the sixth power monitor 405219 through the optical waveguide to be monitored by the sixth power monitor 405219.

The first end of the second splitter 4052162 includes a third input port and a fourth input port, the second end of the second splitter 4052162 includes a third output port and a fourth output port, the third input port is connected to the second end of the first modulation arm 4052163, the fourth input port is connected to the second end of the second modulation arm 4052164, the third output port is connected to the fifth power monitor 405218 through an optical waveguide, and the fourth output port is connected to the sixth power monitor 405219 through an optical waveguide.

The first beam splitter 4052161 and the second beam splitter 4052162 both utilize the interference principle to realize light splitting and light combining.

The splitting ratios of the first beam splitter 4052161 and the second beam splitter 4052162 are equal. When the splitting ratios of the first beam splitter 4052161 and the second beam splitter 4052162 differ greatly, beam loss is easily caused. In order to reduce beam loss, in some embodiments, the splitting ratios of the first beam splitter 4052161 and the second beam splitter 4052162 are designed to be approximately equal. However, in order to further reduce beam loss, the splitting ratios of the first beam splitter 4052161 and the second beam splitter 4052162 may be designed to be equal, and the splitting ratio of the first beam splitter 4052161 is 50%:50%, and the splitting ratio of the second beam splitter 4052162 is also 50%:50%.

At the same time, only one of the light beams transmitted by the directional coupler 40522 and the vertical coupler 405217 is coupled to the first beam splitter 4052161. For example, at time T1, the light beam transmitted by the directional coupler 40522 is coupled to the first beam splitter 4052161; at time T2, the light beam transmitted by the vertical coupler 405217 is coupled to the first beam splitter 4052161.

The first modulation arm 4052163 has a first end connected to the second end of the first beam splitter 4052161 , and a second end connected to the first end of the second beam splitter 4052162 .

The second modulation arm 4052164 has a first end connected to the second end of the first beam splitter 4052161 , and a second end connected to the first end of the second beam splitter 4052162 .

Among them, the first modulation arm 4052163 is a silicon waveguide, and the second modulation arm 4052164 is a silicon waveguide + silicon nitride waveguide + silicon waveguide.

The wavelength sensor 405216 is temperature insensitive.

The wavelength sensor based on the Mach-Zehnder interference principle has a waveform in which the output intensity of the output light beam at the output end changes with the wavelength of the input light beam at the input end, which is related to the refractive index of the upper and lower modulation arms and the length of the modulation arms. The difference between the product of the refractive index and the length of the modulation arms in the two modulation arms determines the wavelength position of the input light beam. Therefore, as long as the waveguide design ensures that the difference between the product of the two modulation arms (the product of the refractive index and the length of the modulation arm) remains unchanged at different temperatures, it can be ensured that the waveform in which the output intensity of the output light beam at the output end changes with the wavelength of the input light beam at the input end remains unchanged at different temperatures, thereby achieving the temperature-insensitive characteristic of the wavelength of the input light beam.

Since the first modulation arm 4052164 is a silicon waveguide and the second modulation arm 4052164 is a silicon waveguide + silicon nitride waveguide + silicon waveguide, it is only necessary to adjust the lengths of the first modulation arm 4052164 and the second modulation arm 4052164 so that the product of the length of the first modulation arm 4052164 and the refractive index is By keeping the difference between the product of the length and the refractive index of the second modulation arm 4052164 unchanged, the insensitivity of the wavelength to temperature can be achieved.

Since the first end of the second modulation arm 4052164 is a silicon waveguide, the second end of the second modulation arm 4052164 is a silicon waveguide, and a silicon nitride waveguide is located between the first end and the second end of the second modulation arm 4052164, in order to allow a light beam of a specific wavelength to be transmitted smoothly between waveguides of two different materials, two waveguide converters are arranged on the second modulation arm 4052164, and the two waveguide converters are respectively located between the silicon waveguide and the silicon nitride waveguide.

Since two waveguide converters are provided on the second modulation arm 4052164 , in order to eliminate the influence of the two waveguide converters on the second modulation arm 4052164 , two waveguide converters are correspondingly provided on the first modulation arm 4052163 .

As shown in FIG29 , in some embodiments, the first silicon photonic chip further includes a plurality of absorbers, which are configured to absorb the optical power of useless light beams to avoid reflection and generation of stray light. The first silicon photonic chip includes a first absorber 405211, a second absorber 405212, a third absorber 405213, and a fourth absorber 405214.

The first power divider 40524 is connected to the input end of the first straight light waveguide, the first absorber 405211 is connected to the output end of the first straight light waveguide, the second absorber 405212 is connected to the first output end of the second straight light waveguide, the third absorber 405213 is connected to the second output end of the second straight light waveguide, the first power divider 40524 is connected to the input end of the third straight light waveguide, and the fourth absorber 40214 is connected to the output end of the third straight light waveguide.

The first absorber 405211 is configured to absorb other light beams in the first straight optical waveguide except those passing through the first filter 40526 and the second filter 40527. The second absorber 405212 and the third absorber 405213 are both configured to absorb other light beams in the second straight optical waveguide except those passing through the first filter 40526 and the second filter 40527. The fourth absorber 405214 is configured to absorb other light beams in the third straight optical waveguide except those passing through the first filter 40526 and the second filter 40527.

In some embodiments, the light source includes a semiconductor gain chip and a silicon photonic chip. The silicon photonic chip is configured to receive a light beam of a wavelength range emitted by the semiconductor gain chip, and select a specific wavelength light beam from the light beam, and the silicon photonic chip also emits the specific wavelength light beam to the semiconductor gain chip. The semiconductor gain chip and the silicon photonic chip form a resonant cavity, and the specific wavelength light beam is reflected back and forth between the semiconductor gain chip and the silicon photonic chip, so that the resonant cavity emits a specific wavelength light beam. The silicon photonic chip includes an input coupler, a directional coupler, a wavelength tunable optical component, a wavelength sensor, a fifth power monitor, and a sixth power monitor. The directional coupler is connected to the input coupler, the wavelength tunable optical component, and the wavelength sensor through an optical waveguide, respectively, and the wavelength sensor is also connected to the fifth power monitor and the sixth power monitor through an optical waveguide. The input coupler, the directional coupler, the wavelength tunable optical component, the wavelength sensor, the fifth power monitor, and the sixth power monitor are integrated on the silicon photonic chip, saving space and making the size of the light source smaller to meet production requirements. The input coupler is configured to receive a light beam of a wavelength range emitted by the semiconductor gain chip, and emit a specific wavelength light beam to the semiconductor gain chip. The directional coupler is configured to split a specific wavelength light beam. The wavelength tunable optical component is configured to screen out a specific wavelength light beam from a light beam in a wavelength range to achieve a wavelength tunable function. The wavelength sensor, the fifth power monitor and the sixth power monitor constitute a wavelength locking optical component, and the wavelength locking optical component characterizes whether the specific wavelength light beam deviates from the preset wavelength light beam according to the ratio of the optical power of the fifth power monitor to the optical power of the sixth power monitor to achieve a wavelength locking function. When the specific wavelength light beam deviates from the preset wavelength light beam, the wavelength tunable optical component is adjusted so that the specific wavelength light beam does not deviate from the preset wavelength light beam. In the present disclosure, the input coupler, the directional coupler, the wavelength tunable optical component and the wavelength locking optical component are integrated on a silicon photonic chip, which saves space and makes the size of the light source smaller to meet production requirements; the wavelength tunable optical component and the wavelength locking optical component cooperate to ensure that the specific wavelength light beam output by the light source does not deviate from the preset wavelength light beam.

In some embodiments, another light source is also proposed. The light source includes a semiconductor gain chip, a silicon photonic chip, a wavelength calibration component, and a second power monitor. The semiconductor gain chip is configured to emit a light beam in a wavelength range. A wavelength-tunable optical component is integrated in the silicon photonic chip. The wavelength-tunable optical component is configured to filter out a specific wavelength light beam from a light beam in a wavelength range emitted by the semiconductor gain chip to achieve a wavelength tunable function. The semiconductor gain chip and the silicon photonic chip form a resonant cavity. The specific wavelength light beam is reflected back and forth between the semiconductor gain chip and the silicon photonic chip, so that the specific wavelength light beam is stably output by the semiconductor gain chip. A power monitor, a wavelength calibration component, and a second power monitor in the silicon photonic chip form a wavelength-locked optical component. The wavelength-locked optical component is configured to determine whether the specific wavelength light beam deviates from a preset value. A wavelength beam is set to realize the wavelength locking function. If the specific wavelength beam deviates from the preset wavelength beam, the refractive index of the wavelength tunable optical component is adjusted so that the specific wavelength beam screened by the wavelength tunable optical component does not deviate from the preset wavelength beam. The semiconductor gain chip and the silicon photonic chip form a resonant cavity, and the specific wavelength beam is reflected back and forth between the semiconductor gain chip and the silicon photonic chip, so that the specific wavelength beam is stably output by the semiconductor gain chip. The silicon photonic chip is integrated with a wavelength tunable optical component, and a power monitor, a wavelength calibration component and a second power monitor in the silicon photonic chip form a wavelength locking optical component, which not only enables the light source to realize wavelength tunability and wavelength locking functions; it also saves space, making the size of the light source smaller to meet production needs.

As can be seen from Figures 17, 22 and 23, in some embodiments, the optical component 405 may include a fifth lens, a wavelength calibration component and a second power monitor in addition to the semiconductor gain chip 4051, the silicon photonic chip 4052, the first lens 4053, the isolator 4054, the second lens 4055, the semiconductor amplifier chip 4056, the third lens 4057, the beam splitter 4058, the first power monitor 4059 and the fourth lens 4060.

The semiconductor gain chip 4051, the first lens 4053, the isolator 4054, the second lens 4055, the semiconductor amplifier chip 4056, the third lens 4057, the beam splitter 4058, the first power monitor 4059 and the fourth lens 4060 have been introduced and will not be repeated here.

However, the silicon photonic chip 4052 is only provided with wavelength tunable optical components, but no wavelength locking optical components. Therefore, the silicon photonic chip 4052 can only achieve wavelength tunability, but cannot achieve wavelength locking.

In order to achieve wavelength locking, in some embodiments, the optical component 405 also needs to include a fifth lens, a wavelength calibration component, and a second power monitor.

The fifth lens and the fourth lens 4060 are respectively located on the same side of the silicon photonic chip 4052 and between the silicon photonic chip 4052 and the wavelength calibration component. The fifth lens is configured to couple the light beam of a specific wavelength emitted by the silicon photonic chip to the wavelength calibration component. The fifth lens is a focusing lens, which focuses and couples the light beam of a specific wavelength to the wavelength calibration component.

The wavelength calibration component is located between the fifth lens and the second power monitor.

The second power monitor is configured to monitor the optical power of the specific wavelength light beam passing through the wavelength calibration element.

A power monitor, a wavelength calibration component and a second power monitor in the silicon photonic chip 4052 constitute a wavelength locking optical component. The wavelength locking optical component is configured to determine whether a specific wavelength beam deviates from a preset wavelength beam to achieve a wavelength locking function.

FIG31 is a light path diagram of the sixth optical component provided according to some embodiments of the present disclosure. As shown in FIG31 , in some embodiments, the optical component 405 includes a semiconductor gain chip 4051, a silicon photonic chip 4052, a first lens 4053, a fifth lens 4061, a wavelength calibration component 4062, and a second power monitor 4063.

The semiconductor gain chip 4051 is located between the silicon photonic chip 4052 and the first lens 4053. The first lens 4053 is located between the semiconductor gain chip 4051 and the internal optical fiber adapter. The fifth lens 4061 is located between the silicon photonic chip 4052 and the wavelength calibration component 4062. The wavelength calibration component 4062 is located between the fifth lens 4061 and the second power monitor 4063.

All components in the light source except the silicon photonic chip 4052 are placed on the same side of the silicon photonic chip 4052, which effectively saves the space of the light source, makes the size of the light source smaller, and makes it easier for the light source to meet production needs.

The semiconductor gain chip 4051 is configured to emit a light beam in a wavelength range. The silicon photonic chip 4052 is configured to receive a light beam in a wavelength range and select a light beam of a specific wavelength from the light beams in a wavelength range. The silicon photonic chip 4052 is also configured to inject the light beam of a specific wavelength into the semiconductor gain chip 4051 and the fifth lens 4061. The first lens 4053 is configured to couple the light beam of a specific wavelength emitted by the semiconductor gain chip 4051 into the internal optical fiber adapter. The fifth lens 4061 is configured to couple the light beam of a specific wavelength output by the silicon photonic chip 4052 into the wavelength calibration component 4062. The second power monitor 4063 is configured to monitor the optical power of the light beam of a specific wavelength passing through the wavelength calibration component 4062. The wavelength change direction of the light beam of a specific wavelength is characterized according to the ratio (i.e., P1/P0) of the optical power monitored by a power monitor configured to monitor the light beam of a specific wavelength in the silicon photonic chip 4052 (denoted as P0) and the optical power monitored by the second power monitor 4063 (denoted as P1).

A light beam in a wavelength range emitted by the semiconductor gain chip 4051 is incident on the silicon photonic chip 4052. The silicon photonic chip 4052 selects a light beam with a specific wavelength from the light beams in a wavelength range. The light beam with the specific wavelength is incident on the fifth lens 4061. The fifth lens 4061 couples the light beam with the specific wavelength output by the silicon photonic chip 4052 to the wavelength calibration component 4062. The second power monitor 4063 monitors the optical power of the light beam with the specific wavelength passing through the wavelength calibration component 4062.

A power monitor in the silicon photonic chip 4052, a wavelength calibration component 4062, and a second power monitor 4063 form a wavelength locking optical component. The wavelength locking optical component characterizes whether a specific wavelength beam deviates from a preset wavelength beam according to the ratio of the optical power of the second power monitor 4063 to the optical power of a power monitor in the silicon photonic chip 4052, so as to achieve wavelength locking.

When the wavelength of the selected specific wavelength light beam deviates from the wavelength of the preset wavelength light beam, the optical power of the second power monitor 4063 will change, so that P1/P0 deviates from the preset value. When the wavelength of the selected specific wavelength light beam deviates from the wavelength of the preset light beam, the optical power input into the second power monitor 4063 from the wavelength calibration component will change, so that P1/P0 deviates from the preset value. The increase or decrease of P1/P0 can reflect the offset direction of the wavelength of the specific wavelength light beam, that is, whether the wavelength of the specific wavelength light beam is offset to a long wave or a short wave. When the direction of the offset is known, P1/P0 can be restored to the preset value by adjusting the components in the silicon photonic chip 4052. When P1/P0 is restored to the preset value, the wavelength of the selected specific wavelength light beam is the wavelength of the preset wavelength light beam. Among them, the preset wavelength light beam is a local oscillator light beam that satisfies the coherent component.

The specific wavelength light beam is not only incident on the fifth lens 4061, but also incident on the semiconductor gain chip 4051. After the specific wavelength light beam is incident on the semiconductor gain chip 4051, it is reflected by the semiconductor gain chip 4051 to the silicon photonic chip 4052, that is, the specific wavelength light beam is reflected back and forth between the silicon photonic chip 4052 and the semiconductor gain chip 4051. The semiconductor gain chip 4051 and the silicon photonic chip 4052 form a resonant cavity, and the specific wavelength light beam is reflected back and forth between the silicon photonic chip 4052 and the semiconductor gain chip 4051, so that the specific wavelength light beam is stably output by the semiconductor gain chip. The first lens 4053 is configured to couple the specific wavelength light beam emitted by the semiconductor gain chip 4051 to the internal optical fiber adapter.

It can be seen from FIG. 24 , FIG. 25 and FIG. 31 that the optical component 405 further includes an isolator 4054 and a second lens 4055 .

It can be seen from FIG. 24 , FIG. 26 and FIG. 31 that the optical component 405 further includes a semiconductor amplifier chip 4056 and a third lens 4057 .

As can be seen from Figures 24, 27 and 31, the optical component 405 also includes a beam splitter 4058 and a first power monitor 4059.

It can be seen from FIG. 24 , FIG. 28 and FIG. 31 that the optical component 405 further includes a fourth lens 4060 .

FIG32 is a structural diagram of a second silicon photonic chip provided according to some embodiments of the present disclosure. As shown in FIG31-FIG32, in some embodiments, the silicon photonic chip 4052 includes an input coupler 40521, a directional coupler 40522, a phase modulator 40523, a first power divider 40524, a second power divider 40525, a first filter 40526, a second filter 40527, a third power monitor 40528, a fourth power monitor 40529, and an output coupler 405210. The input coupler 40521, the directional coupler 40522, the phase modulator 40523, the first power divider 40524, the second power divider 40525, the first filter 40526, the second filter 40527, the third power monitor 40528, the fourth power monitor 40529, and the output coupler 405210 are all formed by the silicon photonic chip using CMOS technology.

The input coupler 40521 and the output coupler 405210 are located on the same side of the silicon photonics chip.

The input coupler 40521, the phase modulator 40523, the first power divider 40524, the first filter 40526, the second filter 40527 and the fourth power monitor 40529 have all been introduced and will not be repeated here.

The first end of the directional coupler 40522 is connected to the input coupler 40521 through an optical waveguide, the second end of the directional coupler 40522 is connected to the phase modulator 40523 through an optical waveguide, the third end of the directional coupler 40522 is connected to the fourth power monitor 40529 through an optical waveguide, and the fourth end of the directional coupler 40522 is connected to the second power splitter 40525 through an optical waveguide. The directional coupler 40522 splits the input specific wavelength light beam into three light beams. The first light beam is transmitted to the input coupler 40521 through the first optical waveguide, and then output to the outside of the silicon photonic chip 4052 through the input coupler 40521; the second light beam is transmitted to the fourth power monitor 40529 through the optical waveguide, so that the fourth power monitor 40529 can monitor the optical power of the specific wavelength light beam; the third light beam is transmitted to the second power splitter 40525 through the optical waveguide for wavelength locking.

The second power divider 40525 is located between the directional coupler 40522 and the third power monitor 40528, and also between the directional coupler 40522 and the output coupler 405210. The second power divider 40525 is configured to split light. The first end of the second power divider 40525 is connected to the fourth end of the directional coupler 40522 through an optical waveguide, the second end of the second power divider 40525 is connected to the third power monitor 40528 through an optical waveguide, and the third end of the second power divider 40525 is connected to the output coupler 405210 through an optical waveguide. The second power divider 40525 divides the third light beam split by the directional coupler 40522 into two light beams. One light beam is transmitted to the third power monitor 40528 through an optical waveguide so that the third power monitor 40528 can monitor the optical power of the light beam with a specific wavelength; the other light beam is transmitted to the output coupler 405210 through an optical waveguide.

The splitting ratio of the second power divider 40525 can be any ratio. When the splitting ratio of the second power divider 40525 changes, the preset value of P1/P0 also changes. As long as the splitting ratio of the second power divider 40525 changes, the preset value of P1/P0 can be changed accordingly.

The third power monitor 40528 is configured to monitor the optical power of a light beam of a specific wavelength in real time. The third power monitor 40528 is connected to the second end of the second power divider 40525 through an optical waveguide. The third power monitor 40528 monitors the optical power of a light beam split by the second power divider 40525.

Among them, the power monitor configured to monitor a light beam of a specific wavelength in the silicon photonic chip 4052 is the third power monitor 40528 .

The output coupler 405210 is disposed at one end face of the silicon photonic chip 4052, and is configured to couple a light beam of a specific wavelength into the fifth lens 4061. The output coupler 405210 is connected to the second power divider 40525 via an optical waveguide. The output coupler 405210 couples another light beam split by the second power divider 40525 into the fifth lens 4061.

In some embodiments, the output coupler 405210 adopts an inclined waveguide design, that is, the waveguide of the output coupler 405210 is set at a certain angle to the end face of the silicon photonic chip 4052, so that the signal light output by the output coupler 405210 is emitted horizontally from the end face of the silicon photonic chip, which is convenient for coupling with the second lens 4055 outside the silicon photonic chip 4052.

The third power monitor 40528 realizes wavelength locking with the wavelength calibration component 4062 and the second power monitor 4063 outside the silicon photonic chip 4052. The optical power monitored by the third power monitor 40528 is recorded as P0, and the optical power monitored by the second power monitor 4063 is recorded as P1. The wavelength calibration component 4062 characterizes the wavelength change direction of the specific wavelength light beam according to P1/P0. The wavelength calibration component learns the wavelength offset direction of the specific wavelength light beam according to P1/P0, and restores P1/P0 to the preset value by adjusting the device in the silicon photonic chip 4052. When P1/P0 is restored to the preset value, the selected specific wavelength light beam is the preset wavelength light beam.

As shown in FIG. 32 , in some embodiments, the second silicon photonic chip further includes a plurality of absorbers, which are configured to absorb the optical power of useless light beams to avoid reflection and generation of stray light. The first silicon photonic chip includes a first absorber 405211, a second absorber 405212, a third absorber 405213, and a fourth absorber 405214. The first absorber 405211, the second absorber 405212, the third absorber 405213, and the fourth absorber 405214 have been introduced and will not be described again here.

33 is a structural diagram of a third silicon photonic chip provided according to some embodiments of the present disclosure. As shown in FIG33 , in some embodiments, the third silicon photonic chip includes an input coupler 40521, a directional coupler 40522, a phase modulator 40523, a first power divider 40524, a second power divider 40525, a first filter 40526, a second filter 40527, a third power monitor 40528, and an output coupler 405210. The input coupler 40521, the directional coupler 40522, the phase modulator 40523, the first power divider 40524, the second power divider 40525, the first filter 40526, the second filter 40527, the third power monitor 40528, and the output coupler 405210 are all formed by the silicon photonic chip using CMOS technology.

The input coupler 40521, the phase modulator 40523, the first power divider 40524, the first filter 40526, the second filter 40527 and the output coupler 405210 have been introduced and will not be repeated here.

The first end of the directional coupler 40522 is connected to the input coupler 40521 through an optical waveguide, the second end of the directional coupler 40522 is connected to the phase modulator 40523 through an optical waveguide, and the third end of the directional coupler 40522 is connected to the second power splitter 40525 through an optical waveguide. The directional coupler 40522 splits the input specific wavelength light beam into multiple light beams. The first light beam is transmitted to the input coupler 40521 through the first optical waveguide, and then output to the outside of the silicon photonic chip 4052 through the input coupler 40521; the second light beam is transmitted to the second power splitter 40525 through the optical waveguide, For wavelength locking.

The second power divider 40525 is located between the directional coupler 40522 and the third power monitor 40528, and also between the directional coupler 40522 and the output coupler 405210. The second power divider 40525 is configured to split light. The first end of the second power divider 40525 is connected to the third end of the directional coupler 40522 through an optical waveguide, the second end of the second power divider 40525 is connected to the third power monitor 40528 through an optical waveguide, and the third end of the second power divider 40525 is connected to the output coupler 405210 through an optical waveguide. The second power divider 40525 divides the second light beam split by the directional coupler 40522 into two light beams. One light beam is transmitted to the third power monitor 40528 through an optical waveguide so that the third power monitor 40528 can monitor the optical power of the light beam with a specific wavelength; the other light beam is transmitted to the output coupler 405210 through an optical waveguide.

The third power monitor 40528 is configured to monitor the optical power of the light beam of a specific wavelength. The third power monitor 40528 is connected to the second end of the second power divider 40525 through an optical waveguide. The third power monitor 40528 monitors the optical power of the second light beam split by the directional coupler 40522, and further monitors the optical power of the first light beam split by the directional coupler 40522 and input to the semiconductor gain chip 4051.

The third power monitor 40528 realizes wavelength locking with the wavelength calibration component 4062 and the second power monitor 4063 outside the silicon photonic chip 4052. The optical power monitored by the third power monitor 40528 is recorded as P0, and the optical power monitored by the second power monitor 4063 is recorded as P1. The wavelength change direction of the specific wavelength light beam is characterized according to P1/P0. The offset direction of the wavelength of the specific wavelength light beam is known according to P1/P0, and P1/P0 is restored to the preset value by adjusting the device in the silicon photonic chip 4052. When P1/P0 is restored to the preset value, the selected specific wavelength light beam is the preset wavelength light beam.

As shown in FIG33 , in some embodiments, the third silicon photonic chip further includes a plurality of absorbers, which are configured to absorb the optical power of useless light beams to avoid reflection and generation of stray light. The third silicon photonic chip includes a first absorber 405211, a second absorber 405212, a third absorber 405213, a fourth absorber 405214, and a fifth absorber 405215.

The first absorber 405211, the second absorber 405212, the third absorber 405213, the fourth absorber 405214 and the fifth absorber 405215 have been introduced and will not be repeated here.

The fifth absorber 405215 is connected to the fourth end of the directional coupler 40522 via the fourth straight optical waveguide. The fifth absorber 405215 is configured to absorb the light beam transmitted from the fourth straight optical waveguide. The light beam transmitted from the fourth straight optical waveguide is the third light beam separated by the directional coupler 40522.

In some embodiments, the second silicon photonic chip and the third silicon photonic chip further include a plurality of thermal insulation grooves 405216. The thermal insulation grooves 405216 are formed by etching the surface of the silicon photonic chip 4052. The thermal insulation grooves 405216 are placed between various devices in the silicon photonic chip 4052, thereby reducing the thermal crosstalk of various devices in the silicon photonic chip 4052 and improving the performance of the silicon photonic chip 4052.

For the second type of silicon photonic chip, the thermal isolation groove 405216 is placed between the directional coupler 40522 and the phase modulator 40523, between the first power divider 40524 and the first filter 40526, between the first filter 40526 and the second filter 40527, between the second filter 40527 and the third power monitor 40528, between the phase modulator 40523 and the second power divider 40525, and between the directional coupler 40522 and the second power divider 40525.

The thermal isolation groove 405216 is placed between the directional coupler 40522 and the phase modulator 40523, and the thermal isolation groove 405216 here reduces the thermal crosstalk between the directional coupler 40522 and the phase modulator 40523. The thermal isolation groove 405216 is placed between the first power divider 40524 and the first filter 40526, and the thermal isolation groove 405216 here reduces the thermal crosstalk between the first power divider 40524 and the first filter 40526. The thermal isolation groove 405216 is placed between the first filter 40526 and the second filter 40527, and the thermal isolation groove 405216 here reduces the thermal crosstalk between the first filter 40526 and the second filter 40527. The thermal isolation groove 405216 is placed between the second filter 40527 and the third power monitor 40528. The thermal isolation groove 405216 here reduces the thermal crosstalk between the second filter 40527 and the third power monitor 40528. The thermal isolation groove 405216 is placed between the phase modulator 40523 and the second power divider 40525. The thermal isolation groove 405216 here reduces the thermal crosstalk between the phase modulator 40523 and the second power divider 40525. The thermal isolation groove 405216 is placed between the directional coupler 40522 and the second power divider 40525. Groove 405216 reduces thermal crosstalk between the directional coupler 40522 and the second power divider 40525 .

The first silicon photonic chip, the second silicon photonic chip and the third silicon photonic chip are all silicon photonic chips that use CMOS technology to integrate wavelength-tunable optical components. The first silicon photonic chip also has a wavelength-locking optical component integrated inside. The second silicon photonic chip and the third silicon photonic chip have a power monitor integrated inside them, and the wavelength calibration component and the second power monitor outside the silicon photonic chip form a wavelength-locking optical component.

In some embodiments, the light source includes a semiconductor gain chip, a silicon photonic chip, a wavelength calibration component, and a second power monitor. The silicon photonic chip is configured to receive a light beam of a wavelength range emitted by the semiconductor gain chip, and to screen a specific wavelength light beam from the light beam, and is also configured to emit the specific wavelength light beam to the semiconductor gain chip and the wavelength calibration component. The semiconductor gain chip and the silicon photonic chip form a resonant cavity, and the specific wavelength light beam is reflected back and forth between the semiconductor gain chip and the silicon photonic chip, so that the resonant cavity emits a specific wavelength light beam. The second power monitor is configured to monitor the optical power of the specific wavelength light beam flowing through the wavelength calibration component. The silicon photonic chip includes an input coupler, a directional coupler, a wavelength tunable optical component, a second power divider, a third power monitor, and an output coupler. The directional coupler is respectively connected to the input coupler, the wavelength tunable optical component, and the second power divider through an optical waveguide, the third power monitor and the output coupler are respectively connected to the second power divider through an optical waveguide, and the input coupler and the output coupler are located on the same side of the silicon photonic chip. The input coupler, directional coupler, wavelength tunable optical component, second power divider, third power monitor and output coupler are integrated on the silicon photonic chip, which saves space and makes the size of the light source smaller to meet production requirements. The input coupler is configured to receive a light beam of a wavelength range emitted by the semiconductor gain chip and emit a specific wavelength light beam to the semiconductor gain chip. The directional coupler is configured to split the specific wavelength light beam. The wavelength tunable optical component is configured to screen a specific wavelength light beam from a light beam of a wavelength range to achieve a wavelength tunable function. The second power divider is configured to split the light beam passing through it after being split by the directional coupler. The third power monitor is configured to monitor the optical power of one of the light beams. The output coupler is configured to emit another light beam to the wavelength calibration component. The third power monitor, the wavelength calibration component and the second power monitor constitute a wavelength locking optical component, which characterizes whether the specific wavelength light beam deviates from the preset wavelength light beam according to the ratio of the optical power of the second power monitor to the optical power of the third power monitor to achieve the wavelength locking function. When a specific wavelength beam deviates from a preset wavelength beam, the wavelength tunable optical component is adjusted so that the specific wavelength beam does not deviate from the preset wavelength beam. According to the optical module provided by some embodiments of the present disclosure, the input coupler, the directional coupler, the wavelength tunable optical component, the second power divider, the third power monitor and the output coupler are integrated on a silicon photonic chip, which saves space and makes the size of the light source smaller to meet production requirements; the wavelength tunable optical component and the wavelength locking optical component cooperate to ensure that the specific wavelength beam output by the light source does not deviate from the preset wavelength beam.

It should be noted that, in this specification, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a circuit structure, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such circuit structure, article or device. In the absence of further restrictions, an element defined by the phrase "includes a ..." does not exclude the existence of other identical elements in the circuit structure, article or device including the element.

Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the disclosure of the invention herein. The present disclosure is intended to cover any variations, uses or adaptations of the present invention that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The description and examples are to be regarded as exemplary only, and the true scope and spirit of the present disclosure are indicated by the contents of the claims.

The above-described embodiments of the present disclosure do not limit the protection scope of the present disclosure.

The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be thought of by any person skilled in the art within the technical scope disclosed in the present disclosure should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

An optical module, comprising:

light source;

The light source comprises:

Semiconductor gain chip;

An input coupler configured to receive a light beam emitted by a semiconductor gain chip and emit a light beam of a specific wavelength to the semiconductor gain chip;

a directional coupler, located between the input coupler and the wavelength tunable optical component;

A wavelength tunable optical component connected to the input coupler, wherein the wavelength tunable optical component is configured to select a specific wavelength light beam from the light beam;

A wavelength locking optical component, comprising: a second power splitter, a second power monitor, a third power monitor, and a wavelength calibration component;

Wherein, the second power monitor is configured to monitor the optical power of the light beam passing through the wavelength calibration component;

The second power divider is located between the directional coupler and the third power monitor, and the second power divider is located between the directional coupler and the output coupler;

The wavelength locking optical component implements wavelength locking according to the ratio of the optical power of the second power monitor to the optical power of the third power monitor;

Or the wavelength locking optical component includes: a fifth power monitor, a sixth power monitor and a wavelength sensor;

Wherein, the wavelength sensor and the wavelength tunable optical component are both connected to the directional coupler;

The fifth power monitor is connected to the wavelength sensor;

A sixth power monitor connected to said wavelength sensor;

The wavelength locking optical component implements wavelength locking according to a ratio of an optical power of the fifth power monitor to an optical power of the sixth power monitor.
The optical module according to claim 1, wherein the fifth power monitor, the sixth power monitor and the wavelength sensor are located inside a silicon photonic chip.
The optical module according to claim 1, wherein the light source is a wavelength tunable light source, and the light source further comprises an output coupler;

The output coupler is connected to the second power divider, and the output coupler and the input coupler are located on the same side of the silicon photonic chip. The output coupler is configured to emit a light beam of a specific wavelength to a wavelength calibration component.
The optical module according to claim 3, wherein the light source comprises a first fixing frame, a second fixing frame, a base and an upper cover;

The first fixing frame, the second fixing frame, the base and the upper cover body surround a cavity;

An optical component is located in the cavity, and the optical component includes the semiconductor gain chip, the silicon photonic chip, the wavelength calibration component and the second power monitor.
The optical module according to claim 4, wherein the wavelength tunable optical component comprises a phase modulator, a first power divider, a first filter and a second filter;

The phase modulator is connected to the directional coupler via an optical waveguide;

The first power divider is connected to the phase modulator via an optical waveguide, and the first power divider is configured to split the light beam and combine the light beam;

The first filter is coupled to the power divider via a first straight optical waveguide;

The second filter is coupled to the first filter via a second straight optical waveguide, the second filter is coupled to the first power divider via a third straight optical waveguide, and the second filter cooperates with the first filter to achieve screening of light beams of specific wavelengths.
The optical module according to claim 4, wherein the silicon photonic chip further comprises a fourth power monitor;

The fourth power monitor is connected to the directional coupler via an optical waveguide, and the fourth power monitor is configured to monitor the optical power of a light beam of a specific wavelength to adjust the magnitude of the optical power coupled by the semiconductor gain chip.
The optical module according to claim 5, wherein the silicon photonic chip further comprises a first absorber, a second absorber, a third absorber and a fourth absorber;

The first absorber is connected to the first straight optical waveguide, and the first absorber is configured to absorb other light beams in the first straight optical waveguide except those passing through the first filter and the second filter;

The second absorber and the third absorber are connected to two ends of the second straight optical waveguide respectively, and the second absorber is configured to absorb other light beams in the second straight optical waveguide except those passing through the first filter and the second filter;

The fourth absorber is connected to the third straight optical waveguide, and the fourth absorber is configured to absorb other light beams in the third straight optical waveguide except those that pass through the first filter and the second filter.
The optical module according to claim 5, wherein the silicon photonic chip further comprises a first absorber, a second absorber, a third absorber, a fourth absorber and a fifth absorber;

The first absorber is connected to the first straight optical waveguide, and the first absorber is configured to absorb other light beams in the first straight optical waveguide except those passing through the first filter and the second filter;

The second absorber and the third absorber are connected to two ends of the second straight optical waveguide respectively, and the second absorber is configured to absorb other light beams in the second straight optical waveguide except those passing through the first filter and the second filter;

The fourth absorber is connected to the third straight optical waveguide, and the fourth absorber is configured to absorb other light beams in the third straight optical waveguide except those that pass through the first filter and the second filter;

The fifth absorber is connected to the directional coupler via a fourth straight optical waveguide, and the fifth absorber is configured to absorb other light beams transmitted from the fourth straight optical waveguide.
The optical module according to any one of claims 4 to 8, wherein the optical module further comprises:

A first circuit board is provided with coherent components, a DSP chip and an optical fiber winding frame;

A second circuit board, connected to the first circuit board via a third circuit board, and connected to the light source;

A first supporting plate connected to the second circuit board;

The second support plate is connected to the first support plate and the light source. The second support plate, the first support plate, the second circuit board and the light source form a light source component.
The optical module according to claim 8, wherein the optical fiber winding rack comprises a first protrusion, a second protrusion and a third protrusion;

The first protrusion is located at an end of the optical fiber winding frame away from the light source;

The second protrusion is located between the first protrusion and the third protrusion, and a second storage groove is formed between the second protrusion and the first protrusion;

The third protrusion is located at an end of the optical fiber winding frame close to the light source;

The second storage groove is recessed relative to the first storage groove, and a protective cover is arranged in the second storage groove, and the protective cover is configured to protect the fusion point of the first optical fiber and the local oscillator optical fiber; wherein the first protrusion, the second protrusion and the third protrusion are respectively connected to the side of the optical fiber winding frame as the first storage groove, and the optical fiber extending from the local oscillator optical interface of the coherent component is the The local oscillator optical fiber, the optical fiber extending from the light source is the first optical fiber.
The optical module according to any one of claims 4 to 10, wherein the light source is further provided with an internal optical fiber adapter, a first lens and a fifth lens;

The first lens is located between the semiconductor gain chip and the internal fiber adapter;

The fifth lens is located between the silicon photonic chip and the wavelength calibration component.
The optical module according to claim 11, wherein the light source is further provided with a semiconductor amplifier chip;

The semiconductor amplifier chip is located between the first lens and the optical fiber adapter, and the semiconductor amplifier chip is configured to amplify the optical power of a light beam with a specific wavelength.
The optical module according to claim 12, wherein the light source is further provided with a beam splitter and a first power monitor;

The beam splitter is located between the semiconductor amplifier chip and the internal optical fiber adapter;

The first power monitor is configured to monitor the optical power of the light beam of a specific wavelength split by the beam splitter.
The optical module according to claim 13, wherein the wavelength sensor comprises a first beam splitter, a first modulation arm, a second modulation arm, and a second beam splitter;

The first optical splitter is connected to the directional coupler;

A first end of the first modulation arm is connected to the first optical splitter, and a second end of the first modulation arm is connected to the second optical splitter, and the first modulation arm includes a silicon waveguide;

A first end of the second modulation arm is connected to the first optical splitter, and a second end of the second modulation arm is connected to the second optical splitter, and the second modulation arm includes a silicon nitride waveguide;

The second optical splitter is also connected to the fifth power monitor and the sixth power monitor respectively;

A difference between a product of a length of the first modulation arm and a refractive index of the first modulation arm and a product of a length of the second modulation arm and a refractive index of the second modulation arm is a constant.
The optical module according to claim 13, wherein the silicon photonic chip further comprises a fourth power monitor;

The fourth power monitor is connected to the directional coupler via an optical waveguide, and the fourth power monitor is configured to monitor the optical power of a light beam of a specific wavelength to adjust the magnitude of the optical power coupled by the semiconductor gain chip.