WO2024096325A1 - Transistor mxène et biocapteur le comprenant - Google Patents
Transistor mxène et biocapteur le comprenant Download PDFInfo
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- WO2024096325A1 WO2024096325A1 PCT/KR2023/014748 KR2023014748W WO2024096325A1 WO 2024096325 A1 WO2024096325 A1 WO 2024096325A1 KR 2023014748 W KR2023014748 W KR 2023014748W WO 2024096325 A1 WO2024096325 A1 WO 2024096325A1
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- Prior art keywords
- mxene
- transistor
- present
- biosensor
- substrate
- Prior art date
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- 102000012547 Olfactory receptors Human genes 0.000 claims abstract description 27
- 108050002069 Olfactory receptors Proteins 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 23
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 claims description 34
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 claims description 17
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 claims description 17
- 150000002475 indoles Chemical class 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 3
- 239000002086 nanomaterial Substances 0.000 claims description 2
- 229910009819 Ti3C2 Inorganic materials 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 36
- 235000019645 odor Nutrition 0.000 description 20
- 239000007789 gas Substances 0.000 description 13
- 238000001514 detection method Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000002107 nanodisc Substances 0.000 description 4
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 241000282412 Homo Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 244000144972 livestock Species 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000002365 multiple layer Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004621 scanning probe microscopy Methods 0.000 description 2
- 230000001953 sensory effect Effects 0.000 description 2
- 230000008786 sensory perception of smell Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000002870 angiogenesis inducing agent Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
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- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Chemical group 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000006320 pegylation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000011158 quantitative evaluation Methods 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical group 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
Definitions
- the present invention relates to a MXene transistor and a biosensor including the same, and more specifically, the present invention relates to a MXene transistor capable of detecting complex malodorous substances and a biosensor including the same.
- Odor is a sensory and subjective pollution, and the degree of odor, such as the quality and intensity of the odor, is judged depending on the situation and individual tendencies, and therefore it is difficult to derive quantitative evaluation and objective measurement results.
- livestock odors have the characteristic of constantly changing due to diffusion, etc., making real-time measurement difficult, and contain components that show high odor intensity even though they are distributed in very low concentrations, so quantification and monitoring through chemical analysis have not been performed to date. There are limits to what you can do. Accordingly, there is no practical standard that can be used directly by farmers as an indicator of odor management.
- complex odors have been difficult to automate, unmanned, and continuously measure because they mainly use sensory methods in which air samples are collected and human panels evaluate their intensity through olfaction.
- most sensors are used to recognize single odor molecules of low molecular weight, and research results related to monitoring complex odors actually felt by humans are minimal.
- SWNTs single-walled carbon nanotubes
- FETs field-effect transistors
- human olfactory receptors As an example of this, the Republic of Korea Patent No. 10-1140049, which detects angiogenic factors with a sensor for cancer diagnosis using field effect transistors (FETs), was known, but a sensor capable of detecting complex odors using olfactory receptors was not developed. None was known.
- One aspect of the present invention is to provide a channel member that can be applied to the measurement of indoles.
- Another aspect of the present invention is to provide a transistor capable of measuring indoles.
- Another aspect of the present invention is to provide a sensor for detecting complex odors containing indoles.
- Another aspect of the present invention is to provide a method for detecting indoles.
- a MXene channel member comprising MXene (Ti 3 C 2 ) and an olfactory receptor immobilized on the MXene (Ti 3 C 2 ).
- a substrate a MXene channel layer disposed on the substrate; and a pair of electrodes spaced apart from each other on the substrate, wherein the MXene channel layer includes an olfactory receptor immobilized on MXene (Ti 3 C 2 ).
- a biosensor comprising the MXene transistor of the present invention.
- processing a gas sample in the biosensor of the present invention and measuring an electrical signal of the biosensor.
- a method for detecting indoles from a sample is provided.
- MXene a material that exhibits an electrochemical reaction sensitive to gases. It also has the advantage of being able to selectively measure indoles that contribute to livestock complex odors. Therefore, according to the present invention, it is possible to implement a sensor similar to the sense of smell that humans feel, and the present invention has the advantage of being able to operate stably in liquid and gas phase, so it has very high usefulness.
- FIG 1 shows the results of scanning microscopy (SEM) analysis of the MXene structure.
- Figure 2 shows a schematic diagram of an exemplary transistor.
- Figure 3 shows a photograph of an exemplary manufactured transistor.
- Figure 4 shows a photograph of an exemplary odor measurement device.
- Figure 5(a) is for liquid indole and sketol
- Figure 5(b) is a graph showing the amount of change in current of an exemplary manufactured transistor for gaseous indole and sketol.
- Figure 6 is a graph comparing the electrical characteristic measurement results before and after indole detection.
- a MXene channel member that can detect complex odor substances in rural areas that are difficult to detect with existing gas sensors. More specifically, the MXene channel member of the present invention includes MXene (Ti 3 C 2 ) and the MXene ( It contains olfactory receptors immobilized on Ti 3 C 2 ).
- MXene is a ceramic material with a two-dimensional planar structure and consists of an atomic-thick layer of carbon or nitrogen bonded to a transition metal.
- a bioprobe it can be implemented as an olfactory receptor-based nanodisc that is stable even in the gas phase.
- the bioprobe can be immobilized on the surface of a micro-patterned MXene made based on MEMS technology and used as a detection unit to correlate with the intensity of complex odor. can confirm.
- the MXene may be formed as a thin film, for example, may have a multi-layer thin film structure of two or more layers.
- the layer made of MXene that can be applied in the present invention may be about 3 nm thick, for example 1 to 5 nm thick, and in the case of a multilayer thin film, the thickness of the entire multilayer may be 1 to 10 nm, for example 2 to 4 nm. It may be in the nm range.
- the olfactory receptor of the present invention may be at least one selected from the group consisting of hOR51B4, hOR6Y1, and hOR4E2, wherein the olfactory receptor is chemically reacted to MXene using 3-Aminopropyltriethoxysilane. It may be fixed by bonding.
- Olfactory receptors which are conventionally used bioprobes, exist stably in the liquid phase but are inactive in the gas phase, making it difficult to measure odor molecules.
- the MXene channel member according to the present invention selectively absorbs indoles in the liquid phase, gas phase, or a combination thereof. It is intended for detection and has the advantage of being stably implemented even in the weather.
- the indole may be at least one selected from the group consisting of indole and sketol.
- a MXene transistor using MXene (Ti 3 C 2 ) as a transistor in the sensor detection unit is provided to detect complex odorous substances in rural areas that are difficult to detect with conventional gas sensors.
- the transistor of the present specification may be a field effect transistor (FET), which is composed of a source, drain, and gate electrode, and forms an insulating film on, next to, or below the channel that is the path for current movement formed between the source and drain electrodes. This is achieved by forming a gate electrode on top of the gate electrode. By adjusting the size of the voltage signal applied to the gate electrode, the density of carrier particles present in the channel between the source and drain electrodes is adjusted, which is output to the source or drain electrode. It is a device that can convert the size of a current signal.
- FET field effect transistor
- the MXene transistor of the present invention includes a substrate; a MXene channel layer disposed on the substrate; and a pair of electrodes disposed on the substrate to be spaced apart from each other, wherein the MXene channel layer includes an olfactory receptor immobilized on MXene (Ti 3 C 2 ).
- the substrate is a structure that serves as a support on which the components of the transistor of the present invention are supported, and is an insulating inorganic substrate such as a Si substrate, a glass substrate, a GaN substrate, a silica substrate, a metal substrate such as Ni, Cu, W, or a plastic substrate. can be used.
- the MXene channel layer constituting the transistor of the present invention may be made of a single layer, a bi-layer, or multiple layers, and is more preferably made of a multiple-layer MXene structure as shown in FIG. 1.
- the pair of metals may be a source electrode and a drain electrode formed to be spaced apart from each other on the MXene channel layer to apply a voltage to the MXene channel layer.
- Source electrodes and drain electrodes may be electrically connected through the MXene channel layer and may contain a conductive material, for example, metal, metal alloy, conductive metal oxide, or conductive metal nitride. .
- the source electrode and the drain electrode are independently Cu, Co, Bi, Be, Ag, Al, Au, Hf, Cr, In, Mn, Mo, Mg, Ni, Nb, Pb, Pd, It may include, but is not limited to, those selected from the group consisting of Pt, Re, Rh, Sb, Ta, Te, Ti, W, V, Zr, Zn, and combinations thereof, for example, for high electrical conductivity.
- Au can be used and Cr can be additionally used for adhesion of the Au layer.
- the MXene channel layer may include one or more nanostructures containing olfactory receptors immobilized on MXene (Ti 3 C 2 ).
- the olfactory receptor may be immobilized on MXene using a linker.
- the olfactory receptor may be immobilized on MXene by a chemical bond using 3-Aminopropyltriethoxysilane and Pegylation. You can.
- the linker layer is a component for coupling the bioprobe portion of the olfactory receptor to the MXene channel layer of the transistor of the present invention, and may be disposed on the MXene channel layer exposed between a pair of metals spaced apart.
- the MXene channel layer may be patterned, specifically, may be finely patterned.
- the olfactory receptor may be bound (immobilized) to the surface of the patterned MXene channel layer.
- the MXene channel layer can be patterned in various polygonal shapes such as a circle, triangle, square, pentagon, or hexagon (honeycomb).
- various types of MXene channel layer patterns can be provided, making the biosensor miniaturized and easy to carry, and thus meeting the needs of various types of transistor designs. there is.
- a biosensor including the MXene transistor of the present invention described above is provided, and the biosensor may be for detecting indoles.
- the biosensor may further include at least one of an ammonia sensor and a hydrogen sulfide sensor, and the biosensor formed in this way makes it possible to manufacture a portable integrated sensor module for high sensitivity odor detection.
- a method of detecting indoles from a sample is provided using the biosensor of the present invention.
- the method of detecting indoles of the present invention includes the steps of processing a gas sample with the biosensor of the present invention; and measuring the electrical signal of the biosensor.
- the transistor-based biosensor according to the present invention reproduces the olfactory receptor protein present in the human nose, enabling real-time detection of gaseous pollutants and further exhibiting excellent sensitivity. Therefore, the transistor-based biosensor according to the present invention can be used as a real-time gas inspection tool in the environmental field.
- a Si substrate was placed in a chamber, and MXene dispersed in DMSO at a 10% concentration was spin-coated at 750 rpm for 30 minutes to form a MXene thin film layer on the Si substrate.
- a positive photoresist (AZ5214, Clariant Corp) was spin-coated on the MXene channel layer formed on the substrate, and then the MXene channel layer was patterned through UV exposure, baking, and development processes.
- SEM scanning microscopy
- a patterned electrode is formed through a spin-coating and photolithography process on the MXene channel layer patterned and aligned on the Si wafer substrate, and then a metal electrode is formed using an electron beam (E-beam).
- An electrode was formed on the MXene channel layer through a metal layer deposition process.
- a linker layer was formed as a medium for fixing the MXene transistor and the nanodisc.
- the linker used APTES (3-Aminopropyltriethoxysilane), and the surface of the MXene layer was coated with a 1 wt% APTES solution and reacted at 25°C for 4 hours to form a linker layer.
- Figure 2 shows a schematic diagram of a transistor including an olfactory receptor-based nanodisk immobilized on a micro-patterned MXene channel, an electrode source, and a drain
- Figure 3 shows the actual manufactured transistor.
- An odor measuring device including the transistor manufactured in step 1 above, an ammonia sensor, and a hydrogen sulfide sensor was manufactured, and the manufactured device is shown in FIG. 4.
- the device of the present invention is capable of detecting trace amounts of indole not only in the liquid phase but also in the gas phase.
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Biochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
La présente invention concerne un transistor MXène et un biocapteur le comprenant et, plus précisément : un élément de canal MXène comprenant un MXène (Ti3C2) et un récepteur olfactif immobilisé dans le MXène (Ti3C2); un transistor MXène comprenant un substrat, une couche de canal MXène agencée sur le substrat et une paire d'électrodes agencées pour être espacées l'une de l'autre sur le substrat, la couche de canal MXène comprenant un récepteur olfactif immobilisé dans le MXène (Ti3C2); et un biocapteur comportant le transistor MXène.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2022-0142627 | 2022-10-31 | ||
KR1020220142627A KR20240061213A (ko) | 2022-10-31 | 2022-10-31 | 맥신 트랜지스터 및 이를 포함하는 바이오 센서 |
Publications (1)
Publication Number | Publication Date |
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WO2024096325A1 true WO2024096325A1 (fr) | 2024-05-10 |
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ID=90930722
Family Applications (1)
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PCT/KR2023/014748 WO2024096325A1 (fr) | 2022-10-31 | 2023-09-26 | Transistor mxène et biocapteur le comprenant |
Country Status (2)
Country | Link |
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KR (1) | KR20240061213A (fr) |
WO (1) | WO2024096325A1 (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109799267A (zh) * | 2019-04-02 | 2019-05-24 | 吉林大学 | 基于碱化风琴状MXene敏感材料的平面型湿度、氨气传感器及其制备方法 |
KR20190076341A (ko) * | 2017-12-22 | 2019-07-02 | 한국과학기술원 | 맥신을 이용한 케미레지스터 가스센서 및 이의 제조 방법 |
KR20210067670A (ko) * | 2019-11-29 | 2021-06-08 | 한양대학교 산학협력단 | 맥신/그래핀 하이브리드 감지부를 포함하는 기체 센서 |
US20220219993A1 (en) * | 2019-05-29 | 2022-07-14 | Nanyang Technological University | Porous nanosheets for effective adsorption of small molecules and volatile organic compounds |
CN115078489A (zh) * | 2022-05-31 | 2022-09-20 | 复旦大学 | 一种嗅觉与视觉集成的仿生感知器件及其制备方法 |
-
2022
- 2022-10-31 KR KR1020220142627A patent/KR20240061213A/ko unknown
-
2023
- 2023-09-26 WO PCT/KR2023/014748 patent/WO2024096325A1/fr unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190076341A (ko) * | 2017-12-22 | 2019-07-02 | 한국과학기술원 | 맥신을 이용한 케미레지스터 가스센서 및 이의 제조 방법 |
CN109799267A (zh) * | 2019-04-02 | 2019-05-24 | 吉林大学 | 基于碱化风琴状MXene敏感材料的平面型湿度、氨气传感器及其制备方法 |
US20220219993A1 (en) * | 2019-05-29 | 2022-07-14 | Nanyang Technological University | Porous nanosheets for effective adsorption of small molecules and volatile organic compounds |
KR20210067670A (ko) * | 2019-11-29 | 2021-06-08 | 한양대학교 산학협력단 | 맥신/그래핀 하이브리드 감지부를 포함하는 기체 센서 |
CN115078489A (zh) * | 2022-05-31 | 2022-09-20 | 复旦大学 | 一种嗅觉与视觉集成的仿生感知器件及其制备方法 |
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