WO2024088348A1

WO2024088348A1 - Led display panel, display screen, and electronic device

Info

Publication number: WO2024088348A1
Application number: PCT/CN2023/126861
Authority: WO
Inventors: 魏山山; 井海龙; 王垚; 方建平; 龙浩晖
Original assignee: 华为技术有限公司
Priority date: 2022-10-28
Filing date: 2023-10-26
Publication date: 2024-05-02
Also published as: CN218918892U

Abstract

The present application discloses an LED display panel, a display screen, and an electronic device. The LED display panel provided in the present application comprises a substrate, a plurality of pixel units, and a plurality of support structures. The plurality of support structures and the plurality of pixel units are secured on the same side of the substrate, the plurality of pixel units are arranged at intervals relative to one another, and the plurality of support structures are located in gaps between the plurality of pixel units. The LED display panel comprises a display region and a support region, the display region being the region corresponding to the plurality of pixel units, and support region being the region corresponding to the plurality of support structures. The elastic modulus of the LED display panel in the support region is greater than the elastic modulus of the LED display panel in the display region. In the LED display panel provided by the present application, arranging a support structure increases the pressure bearing capacity of the LED display panel, and further improves the reliability and service life of the LED display panel, the display screen, and the electronic device.

Description

LED display panels, displays and electronic devices

This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of China on October 28, 2022, with application number 2022222871076.4, and priority to the Chinese patent application with the invention name “LED display panel, display screen and electronic device”, all contents of which are incorporated by reference in this application.

Technical Field

The present application relates to the field of display technology, and in particular to an LED display panel, a display screen and an electronic device.

Background technique

The display screen of the electronic device is provided with an LED display panel, which is used to realize functions such as display and touch control. However, the existing LED display panel has a weak pressure bearing capacity. When the LED display panel is impacted or squeezed, the pixel unit, metal circuit and other structures of the LED display panel are easily damaged, resulting in partial black screen, black spots, black flashes, touch failure and other problems on the display screen. In other words, the reliability of the existing display screen is poor, which affects the service life of the electronic device.

Summary of the invention

The purpose of the present application is to provide an LED display panel, a display screen and an electronic device. The LED display panel provided in the present application improves the pressure bearing capacity of the LED display panel by setting a support structure, thereby improving the reliability and service life of the LED display panel.

In a first aspect, the present application provides an LED display panel. The LED display panel provided by the present application includes a substrate, a plurality of pixel units, and a plurality of supporting structures, wherein the plurality of supporting structures and the plurality of pixel units are fixed on the same side of the substrate, the plurality of pixel units are arranged at intervals from each other, the plurality of supporting structures are located in the gaps between the plurality of pixel units, the LED display panel includes a display area and a supporting area, the display area is an area corresponding to the plurality of pixel units, the supporting area is an area corresponding to the plurality of supporting structures, and the elastic modulus of the LED display panel in the supporting area is greater than the elastic modulus of the LED display panel in the display area.

In the present application, a supporting structure is arranged between pixel units, and the elastic modulus of the LED display panel in the supporting area is greater than the elastic modulus of the LED display panel in the display area, that is, the supporting structure can withstand more pressure, thereby reducing the pressure on the pixel unit and improving the reliability of the LED display panel, thereby improving the reliability and service life of the display screen and electronic equipment.

In some implementations, the multiple support structures all include a first sub-support structure, the pixel unit includes a plurality of first functional layers stacked together, the first sub-support structure includes a plurality of first support members stacked together, and the multiple first support members are respectively made of the same material as some of the first functional layers in the multiple first functional layers of the pixel unit, so that the multiple first support members can be manufactured through the same process as some of the first functional layers in the multiple first functional layers.

In this implementation, the support structure can be prepared without adding any additional steps, thereby improving the pressure-bearing capacity of the LED display panel without additionally increasing the manufacturing cost.

In some implementations, the LED display panel also includes a flat layer, which is located on the upper side of the multiple first sub-support structures and the multiple pixel units, the thickness of the flat layer in the support area is less than the thickness of the flat layer in the display area, and the elastic modulus of the flat layer is less than the elastic modulus of any one of the multiple first functional layers.

In this implementation, the elastic modulus of the flat layer is smaller than the elastic modulus of the multiple first functional layers of the pixel unit, that is, the elastic modulus of the flat layer is smaller than the elastic modulus of other structures of the LED display panel in the support area and the display area. The thickness of the flat layer of the LED display panel in the support area is smaller than the thickness of the flat layer in the display area, that is, the proportion of the flat layer in the structure of the support area is smaller than the proportion in the structure of the display area, and the proportion of other structures with higher elastic modulus in the support area is higher than that in the display area, so that the elastic modulus of the LED display panel in the support area is higher than that in the display area, so as to achieve the technical effect of increasing the pressure-bearing capacity of the LED display panel through the support structure.

In some implementations, multiple first support members correspond one-to-one to multiple first functional layers, the materials and thicknesses of the first support members and the corresponding first functional layers are the same, the multiple first support members are stacked in sequence in the thickness direction, and at least one first functional layer among the multiple first functional layers is located on the same layer as the other first functional layers and is staggered.

In this implementation, in the stacking direction, the number of the first supporting members of the first sub-support structure is greater than the number of the first functional layers of the pixel unit. Because the first supporting members and their corresponding first functional layers have the same material and thickness, the elastic modulus of the LED display panel in the supporting area is higher than that in the display area, so as to achieve the technical effect of increasing the pressure bearing capacity of the LED display panel through the supporting structure.

In some implementations, the bottom of the first sub-support structure and the bottom of the pixel unit are located in the same plane, and the maximum distance between the top of the first sub-support structure and the substrate is greater than the maximum distance between the top of the pixel unit and the substrate.

In this implementation, the top of the first sub-support structure is higher than the top of the pixel unit in the thickness direction, so that the support structure can bear all or most of the external pressure, further reducing the pressure on the pixel unit, thereby further increasing the pressure-bearing capacity of the LED display panel.

In some implementations, the multiple first functional layers of the pixel unit include a pixel definition layer, and there is a support member among the multiple first support members that is manufactured through the same half-tone mask process as the pixel definition layer, and the thickness of the support member is greater than the maximum thickness of the pixel definition layer.

In this implementation, the thickness of the support member is greater than the maximum thickness of the pixel definition layer, so that the maximum distance between the top of the first sub-support structure and the substrate is greater than the maximum distance between the top of the pixel unit and the substrate.

In some implementations, the LED display panel also includes multiple first packaging structures, the multiple first packaging structures correspond one-to-one to the multiple pixel units, and the first packaging structures are used to encapsulate the corresponding pixel units; the first packaging structure includes a top packaging structure and a bottom packaging layer, the bottom packaging layer is fixed to the bottom of the pixel unit, at least part of the structure of the top packaging structure covers the upper surface of the pixel unit, and the top packaging structure is in sealing contact with the bottom packaging layer.

In this implementation, impurities such as water and/or oxygen entering the pixel unit will cause the OLED device layer of the pixel unit to fail or the cathode to lose its electrical properties, thereby causing the pixel unit to be unable to emit light. By separately encapsulating multiple pixel units through multiple first encapsulation structures, water and/or oxygen can be prevented from diffusing between adjacent pixel units. Even if the encapsulation structure of a single pixel unit fails, it will not affect other pixel units, avoiding a wide range of impacts, thereby avoiding problems such as black spots and partial black screens, and improving the reliability of the LED display panel.

In addition, when the display screen including the LED display panel is bent, curled or otherwise deformed, multiple pixel units will also be subjected to stress such as compression or pulling. Multiple pixel units are individually encapsulated through multiple first encapsulation structures, and there is space between adjacent pixel units, so that when the LED display panel is bent or curled, the pixel units can release the stress caused by the deformation by being relatively close or relatively far away, thereby reducing the impact of the stress caused by the deformation on the pixel units themselves, improving the reliability of the LED display panel, and the reliability and service life of the display screen and electronic equipment; the pixel units can release the stress caused by the deformation by being relatively close or relatively far away, and can also improve the bending performance of the display screen including the LED display panel to achieve a smaller bendable radius.

Furthermore, the top packaging structure can block water and/or oxygen from the upper side of the pixel unit, and the bottom packaging layer can block water and/or oxygen from the lower side of the pixel unit, thereby improving the packaging performance of the first packaging structure and further improving the reliability of the LED display panel, display screen and electronic equipment.

In some implementations, at least one support structure among the multiple support structures includes two fourth support members, and the two fourth support members are made of the same material as the top packaging structure and the bottom packaging layer, respectively, so that the two fourth support members can be manufactured through the same process as the top packaging structure and the bottom packaging layer, respectively.

In some implementations, the LED display panel also includes multiple driving units, the multiple driving units are located between the multiple pixel units and the substrate, the multiple driving units are connected to the multiple pixel units, the multiple driving units are used to respond to driving signals and make the multiple pixel units emit light according to the driving signals, and the multiple driving units are staggered with the multiple supporting structures.

In this implementation, a plurality of driving units are arranged into a driving array, and the LED display panel can be actively driven through the driving array.

In some implementations, at least one support structure among the multiple support structures includes a second sub-support structure, the second sub-support structure is located on the lower side of the first sub-support structure, the drive unit includes a plurality of stacked second functional layers, the second sub-support structure includes a plurality of stacked second support members, and the plurality of second support members are respectively made of the same material as some of the plurality of second functional layers of the drive unit, so that the plurality of second support members can be manufactured through the same process as some of the plurality of second functional layers.

In some implementations, the LED display panel further includes a plurality of second packaging structures, the plurality of second packaging structures correspond one-to-one to the plurality of pixel units, and the second packaging structures are used to package the corresponding pixel units;

The driving unit includes a third packaging structure, at least a portion of the second packaging structure covers an upper surface of the pixel unit, and the second packaging structure is in sealing contact with the third packaging structure.

In this implementation, the pixel unit is packaged together by the third packaging structure located in the driving unit and the second packaging structure, that is, the third packaging structure located in the driving unit replaces the bottom packaging layer of the first packaging structure, so that the anode of the pixel unit can be directly prepared on the first planarization layer, eliminating the bottom packaging layer, reducing the number of stacking layers of the LED display panel, thereby reducing the thickness of the LED display panel to meet the demand for lightness and thinness; it can also reduce the process steps and reduce costs.

In some implementations, the LED display panel further includes a touch layer and/or an anti-reflection layer disposed on the upper side of the plurality of pixel units, and a plurality of support structures. There is at least one supporting structure including a third sub-support structure, the third sub-support structure is located on the upper side of the first sub-support structure, the touch layer and/or the anti-reflection layer includes a plurality of third functional layers stacked together, the third sub-support structure includes a plurality of third supporting members stacked together, and the plurality of third supporting members are respectively made of the same material as some of the third functional layers in the plurality of third functional layers, so that the plurality of third supporting members can be manufactured through the same process as some of the third functional layers in the plurality of third functional layers.

In some implementations, the extension directions of the multiple support structures are the same; or the multiple support structures include a first support structure and a second support structure, and there is an angle between the extension direction of the first support structure and the extension direction of the second support structure.

In this implementation, the first supporting structure and the second supporting structure jointly provide support, which can further improve the pressure-bearing capacity of the LED display panel and further improve the reliability and service life of the display screen and the electronic device.

In some implementations, the plurality of pixel units are arranged in an array of multiple rows and columns, and the plurality of support structures extend along the direction of the rows or columns.

In this implementation, a plurality of pixel units are packaged in columns or rows.

In some implementations, at least one support structure among a plurality of support structures is disposed between two adjacent rows of pixel units; or at least one support structure among a plurality of support structures is disposed between two adjacent columns of pixel units.

In this implementation, multiple supporting structures are used to jointly provide support, which can further improve the pressure-bearing capacity of the LED display panel and further improve the reliability and service life of the display screen and electronic equipment.

In some implementations, the substrate can be curved.

In this implementation, the substrate can be bent so that the LED display panel composed of the substrate and the components prepared on the upper side of the substrate can also be bent, and then the display screen including the LED display panel can also be bent.

In a second aspect, the present application further provides a display screen. The display screen provided by the present application includes an LED display panel.

In the present application, the display screen includes an LED display panel, and the LED display panel improves the pressure-bearing capacity of the LED display panel by setting a supporting structure, thereby improving the reliability and service life of the LED display panel and the display screen.

In a third aspect, the present application further provides an electronic device. The electronic device provided by the present application includes one or more display screens.

In the present application, the display screen includes an LED display panel, and the LED display panel improves the pressure-bearing capacity of the LED display panel by setting a supporting structure, thereby improving the reliability and service life of the LED display panel, the display screen and the electronic equipment.

In some implementations, the display screen can be bent along a bending direction, and the support structure extends along the bending direction of the display screen.

In this implementation, the elastic modulus of the support structure is relatively high, and the support structure extends along the bending direction, which can reduce the obstruction of the support structure to the bending of the display screen, thereby ensuring the ductility of the display screen while having a higher pressure-bearing capacity.

In some implementations, the size of the display screen can vary.

In this implementation, the size of one side of the display screen can be extended to multiple times of its shortest size, for example, 1.5 times, 2 times. The sizes of both sides of the display screen can be changed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic structural diagram of an electronic device provided by the present application when it is in an open state;

FIG2 is a schematic structural diagram of the electronic device shown in FIG1 when it is in a closed state;

FIG3 is a schematic structural diagram of the electronic device shown in FIG1 in another embodiment when it is in a closed state;

FIG4 is a schematic diagram of the internal structure of the display screen shown in FIG1 in some embodiments;

FIG5 is a schematic diagram of the internal structure of the LED display panel shown in FIG4 in some embodiments;

FIG6 is a schematic diagram of the internal structure of the LED display panel shown in FIG4 in other embodiments;

FIG7 is a schematic diagram of the internal structure of the LED display panel shown in FIG4 in some other embodiments;

FIG8 is a schematic diagram showing the distribution of signal transmission lines of the LED display panel shown in FIG5 ;

FIG9 is a schematic diagram of the internal structure of the LED display panel shown in FIG8 taken along the line A-A;

FIG10 is a schematic diagram of the internal structure of the LED display panel shown in FIG8 taken along the section B-B;

FIG11 is a schematic diagram of the internal structure of the LED display panel shown in FIG8 taken along the C-C section;

FIG12 is a schematic diagram of a partial structure of an LED display panel prepared by step 001 of the manufacturing process of an embodiment of the present application;

FIG13 is a schematic diagram of a portion of the structure of an LED display panel prepared by steps 001 and 002 of the manufacturing process of an embodiment of the present application;

FIG. 14 is a schematic diagram of a portion of the structure of an LED display panel prepared through steps 001 to 003 of the manufacturing process of an embodiment of the present application;

FIG. 15 is a schematic diagram of a portion of the structure of an LED display panel prepared through steps 001 to 004 of the manufacturing process of an embodiment of the present application;

FIG16 is a schematic diagram of the internal structure of the LED display panel shown in FIG8 cut along A-A in some other embodiments;

FIG17 is a schematic diagram of the internal structure of the LED display panel shown in FIG8 cut along B-B in some other embodiments;

FIG18 is a schematic diagram of a portion of the structure of an LED display panel prepared by step 006 of the manufacturing process of an embodiment of the present application;

FIG. 19 is a schematic diagram of a portion of the structure of an LED display panel prepared by steps 006 and 007 of the manufacturing process of an embodiment of the present application;

FIG20 is a schematic diagram of a portion of the structure of an LED display panel prepared through steps 006 to 008 of the manufacturing process of an embodiment of the present application;

FIG21 is a schematic diagram of a portion of the structure of an LED display panel prepared through steps 006 to 009 of the manufacturing process of an embodiment of the present application;

FIG. 22 is a schematic diagram of a portion of the structure of an LED display panel prepared through steps 006 to 010 of the manufacturing process of an embodiment of the present application;

Figure 23 is a schematic diagram of the internal structure of the LED display panel provided in the present application, cut along B-B in some other embodiments.

Detailed ways

The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application.

In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense. For example, "connection" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium. Among them, "fixed connection" means that the two are connected to each other and the relative position relationship after the connection remains unchanged. It should be understood that when component A is fixedly connected to component C through component B, changes in the relative position relationship caused by the deformation of components A, component B and component C themselves are allowed.

The directional terms mentioned in the embodiments of the present application, such as "upper side", "lower side", "top", "bottom", etc., are only references to the directions of the drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the embodiments of the present application, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.

The term "plurality" means at least two. The term "above" includes the number itself. The term "and/or" is a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and/or B may represent: A exists alone, A and B exist at the same time, and B exists alone. The terms "first", "second", etc. are used only for descriptive purposes and cannot be understood as suggesting or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" or "second" may explicitly or implicitly include one or more of the features.

Please refer to FIG. 1, which is a schematic diagram of the structure of an electronic device 100 provided by the present application when it is in an open state. The present application provides an electronic device 100. The electronic device 100 can be a mobile phone, a tablet, a laptop computer, a television, a scroll-type device, a video surveillance device, a wearable device, an augmented reality (AR) device, a virtual reality (VR) device, an ultra-mobile personal computer (UMPC), a netbook, a personal digital assistant (PDA), an unmanned aerial vehicle (unmanned aerial vehicle, referred to as a drone), a driving recorder and other electronic products. Among them, the wearable device can be a smart bracelet, a smart watch, a wireless headset, glasses and a helmet. The scroll-type device can be a smart pen, a digital scroll and other devices. The embodiment of the present application is described by taking the electronic device 100 as a mobile phone as an example.

Exemplarily, the electronic device 100 may include a display screen 1. The display screen 1 may integrate a display function and a touch sensing function. The display function of the display screen 1 is used to display images, videos, etc., and the touch sensing function of the display screen 1 is used to sense the user's touch action to achieve human-computer interaction. Exemplarily, the display screen 1 can be bent and used as a folding screen, a rolled screen or a curved screen. In some other embodiments, the size of the display screen 1 can also be changed and used as a stretch screen. Exemplarily, the size of one of the sides of the display screen 1 can be changed. For example: the size of one of the sides of the display screen 1 can be stretched to multiple times of its shortest size, for example: 1.5 times, 2 times. In some other embodiments, the sizes of both sides of the display screen 1 can be changed.

Exemplarily, the display screen 1 can be an LED (light-emitting diode) display screen 1, including an organic light-emitting diode (OLED) display screen 1, a flexible light-emitting diode (FLED) display screen 1, a MiniLED display screen 1, a micro light-emitting diode (microLED) display screen 1, a Micro-OLED display screen 1, a quantum dot light emitting diode (QLED) display screen 1, etc.

Exemplarily, the display screen 1 may be driven actively by using an active matrix (AM), for example, the active matrix may be a thin film transistor (TFT) array or a micro IC array, etc. In addition, the display screen 1 may be driven passively by using a positive matrix (PM), for example, an array formed by cross-arranging a plurality of cathodes and anodes 201 .

This application is described by taking the display screen 1 as an OLED display screen 1 as an example.

Please refer to FIG. 1 and FIG. 2 in combination. FIG. 2 is a schematic structural diagram of the electronic device 100 shown in FIG. 1 when it is in a closed state.

In some embodiments, as shown in FIG. 1 , the electronic device 100 can be unfolded to an open state; as shown in FIG. 2 , the electronic device 100 can also be folded to a closed state. The electronic device 100 can also be unfolded or folded to an intermediate state, and the intermediate state can be any state between the open state and the closed state. The electronic device 100 has a shaft 2, and the shaft 2 can be deformed to open or close the electronic device 100. The display screen 1 can move with the electronic device 100.

In this embodiment, when the electronic device 100 is in an open state, the display screen 1 is flattened, and the display screen 1 can display in full screen, so that the electronic device 100 has a larger display area to improve the viewing experience and operation experience of the user. When the electronic device 100 is in a closed state, the plane size of the electronic device 100 is small, which is convenient for the user to carry and store.

Exemplarily, the display screen 1 has a strong pressure bearing capacity. In this embodiment, due to tolerances, openings and other issues, the surfaces of the shaft 2, the middle frame and other components of the electronic device 100 facing the display screen 1 are uneven, thereby squeezing the display screen 1. In addition, the shaft 2 will also squeeze the display screen 1 during the deformation process. The display screen 1 has a strong pressure bearing capacity, so that even if the display screen 1 is squeezed, it will not be damaged, thereby improving the reliability and service life of the display screen 1 and the electronic device 100.

Please refer to FIG. 2 and FIG. 3 . FIG. 3 is a schematic diagram of the structure of the electronic device 100 shown in FIG. 1 in another embodiment when it is in a closed state.

Exemplarily, as shown in Fig. 2, when the electronic device 100 is in a closed state, the display screen 1 may be located inside the electronic device 100. In some other embodiments, when the electronic device 100 is in a closed state, the display screen 1 may also be located outside the electronic device 100.

As shown in FIG2 , when the electronic device 100 is in a closed state, the display screen 1 is located inside the electronic device 100. In this embodiment, the display screen 1 has a relatively small bendable radius. In the embodiment of the present application, the bendable radius of a component is the minimum radius at which the component will not be kinked, damaged, or have its life shortened. When the component has a certain thickness, the bendable radius of the component is the radius of the inner surface of the component.

In this embodiment, when the thickness of the electronic device 100 is constant, the smaller the bendable radius of the display screen 1, the larger the space that the hinge 2 can occupy. The display screen 1 has a smaller bendable radius, which can leave enough space for the hinge 2 and reduce the difficulty of designing the hinge 2.

Exemplarily, the bendable radius of the display screen 1 may be less than 2 mm, such as 1.7 mm, 1.0 mm or 0.5 mm. In some other embodiments, the bendable radius of the display screen 1 may be less than 1.7 mm; or the bendable radius of the display screen 1 may be less than 0.5 mm.

As shown in FIG3 , when the electronic device 100 is in a closed state, the display screen 1 is located outside the electronic device 100. The display screen 1 has a strong pressure bearing capacity, so that the display screen 1 will not be damaged even when it is impacted and/or squeezed by falling or the like. Therefore, the display screen 1 and the electronic device 100 provided by the present application have high reliability and long service life.

Please refer to FIG. 4 , which is a schematic diagram of the internal structure of the display screen 1 shown in FIG. 1 in some embodiments.

Exemplarily, the display screen 1 may include a protective cover plate 11, an LED display panel 12, a heat dissipation layer 13 and a protective layer 14 which are stacked in sequence. Among them, the protective cover plate 11 may be made of transparent glass, or organic materials such as polyimide, so as to reduce the impact on the display effect of the display screen 1 while playing a protective role. The LED display panel 12 is used to emit a light signal to achieve a display function. The heat dissipation layer 13 may be made of a metal layer such as copper foil, which is used to conduct the heat of the LED display panel 12 to reduce the temperature of the LED display panel 12. The protective layer 14 may be made of materials such as foam and silica gel to reduce the squeezing effect of the lower side components of the display screen 1 on the display screen 1, thereby improving the reliability and service life of the display screen 1. In an embodiment of the present application, the side facing the protective cover plate 11 is the upper side of the display screen 1. Correspondingly, the side away from the protective cover plate 11 is the lower side of the display screen 1.

Exemplarily, the display screen 1 may not include the heat dissipation layer 13 and/or the protective layer 14. In some other embodiments, the display screen 1 may also include structures such as a touch panel and/or an anti-reflection layer. The touch panel is used to realize the touch function of the display screen 1, and the anti-reflection layer is used to reduce or eliminate the reflected light on the surface of the LED display panel 12, thereby increasing the light transmittance of the LED display panel 12. Exemplarily, the touch panel and the anti-reflection layer can be arranged between the protective cover plate 11 and the LED display panel 12, and can also be arranged on the lower side of the protective cover plate 11, and the embodiments of the present application are not limited to this.

Exemplarily, the various layer structures of the display screen 1 may be bonded together by optically transparent adhesive or non-transparent pressure-sensitive adhesive (not shown in the figure).

Please refer to FIG. 5 , which is a schematic diagram of the internal structure of the LED display panel 12 shown in FIG. 4 in some embodiments.

Exemplarily, the LED display panel 12 is provided with a plurality of pixel units 20 and a plurality of support structures 30. The plurality of pixel units 20 are arranged at intervals, and the plurality of support structures 30 are located at the gaps between the plurality of pixel units 20. The LED display panel 12 includes a display area and a support area. The display area of the LED display panel 12 is an area corresponding to the plurality of pixel units 20, and the support area of the LED display panel 12 is an area corresponding to the plurality of support structures 30. The elastic modulus E1 of the LED display panel 12 in the support area is greater than the elastic modulus E2 of the LED display panel 12 in the display area. In an embodiment of the present application, the elastic modulus E1 of the LED display panel 12 in the support area can be calculated by the following formula:

The LED display panel 12 has n layers in the support region along the thickness direction, e _i is the elastic modulus of the i-th layer, and _hi is the thickness of the i-th layer. The ratio of the total thickness of the LED display panel 12, i includes all integer values between 1 and n. In the embodiment of the present application, the thickness direction is the thickness direction of the LED display panel 12, that is, the direction perpendicular to the plane where the substrate 121 (please refer to FIG. 9 ) of the LED display panel 12 is located.

The elastic modulus E2 of the LED display panel 12 in the display area can be calculated by the following formula:

The LED display panel 12 has m layers in the display area along the thickness direction, e _k is the elastic modulus of the kth layer, h _k is the ratio of the thickness of the kth layer to the total thickness of the LED display panel 12, and k includes all integer values between 1 and m.

In the prior art, the packaging structure outside the pixel unit 20 uses inorganic materials such as silicon oxide and silicon nitride, which are prone to cracks when under pressure. Water or oxygen, etc., come into contact with the cathode and OLED device of the pixel unit 20 through the cracks, causing the cathode to lose its electrode function, and the OLED device to have a reduced light-emitting efficiency or even fail to emit light, thereby causing problems such as partial black screen and black spots on the display screen 1. In addition, serious cracks in the inorganic material layer can also damage the metal circuits inside the LED display panel 12, causing problems such as black flashes and touch failure on the display screen 1.

In an embodiment of the present application, a supporting structure 30 is arranged between the pixel units 20, and the elastic modulus E1 of the LED display panel 12 in the supporting area is greater than the elastic modulus E2 of the LED display panel 12 in the display area, that is, the supporting structure 30 can withstand more pressure, thereby reducing the pressure on the pixel unit 20 and improving the reliability of the LED display panel 12, thereby improving the reliability and service life of the display screen 1 and the electronic device 100.

In some embodiments, as shown in FIG5 , a plurality of pixel units 20 are arranged in an array of multiple rows and columns, and a plurality of support structures 30 extend in the direction of the rows or columns. In the embodiments of the present application, the extension direction of the support structure 30 is parallel to a certain direction, or there is a small angle between the extension direction of the support structure 30 and a certain direction due to the existence of tolerance, and the support structure 30 can be considered to extend in a certain direction. That is, the extension direction of the support structure 30 is parallel to the direction of the row or column, or there is a small angle between the extension direction of the support structure 30 and the direction of the row or column due to the existence of tolerance, and the support structure 30 can be considered to extend in the direction of the row or column.

Exemplarily, at least one supporting structure 30 among the plurality of supporting structures 30 is disposed between two adjacent rows of pixel units 20 ; or at least one supporting structure 30 among the plurality of supporting structures 30 is disposed between two adjacent columns of pixel units 20 .

In some other embodiments, the plurality of pixel units 20 may also be arranged in an array other than the array shown in FIG. 5 . The embodiments of the present application do not limit the arrangement of the plurality of pixel units 20 .

For example, the plurality of pixel units 20 may be of any shape, the plurality of pixel units 20 may be of the same size, or at least one pixel unit 20 among the plurality of pixel units 20 may be of a different size from the other pixel units 20, and the embodiments of the present application do not limit this. FIG. 5 only illustrates the positional relationship between the support structure 30 and the pixel unit 20, and cannot be understood as limiting the shapes of the support structure 30 and the pixel unit 20.

Please refer to FIG. 2 and FIG. 5 in combination.

In some embodiments, as shown in FIG. 2 , the display screen 1 can be bent along a first direction X, that is, the first direction X is the bending direction of the display screen 1 , and the support structure 30 extends along the first direction X. The first direction X shown in FIG. 5 is the bending direction of the display screen 1 of the electronic device 100 shown in FIG. 2 . Accordingly, the display screen 1 of the electronic device 100 shown in FIG. 3 is bent along the first direction X. During the bending process of the display screen 1 , the bent portion is a curved structure, and the unbent portion is still a planar structure, and the extension direction of the intersection line between the curved structure and the planar structure is the bending direction of the display screen 1 .

In an embodiment of the present application, the elastic modulus of the support structure 30 is relatively high, and the support structure 30 extends along the bending direction, which can reduce the obstruction of the support structure 30 to the bending of the display screen 1, thereby ensuring the ductility of the display screen 1 while having a higher pressure-bearing capacity.

In some other embodiments, the display screen 1 can be bent in multiple directions, for example, the display screen 1 can be bent in a first direction X, and can also be bent in other directions that have an angle with the first direction X. There is an angle between the other directions and the first direction X. Some of the multiple support structures 30 can extend in the first direction X, and other parts of the multiple support structures 30 can extend in other directions that have an angle with the first direction X.

In some embodiments, the display screen 1 may include a plurality of side edges connected end to end in sequence. For example, as shown in FIG. 1 , the display screen 1 may be a rectangle, that is, the display screen 1 may include four side edges connected end to end in sequence. Exemplarily, the first direction X and the second direction Y may be the extension direction of two adjacent side edges of the display screen 1. In an embodiment of the present application, the column direction of the array composed of a plurality of pixel units 20 may be parallel to the first direction X, and the column direction may be parallel to the second direction Y. The support structure 30 extends along the first direction X, that is, the array composed of a plurality of pixel units 20 is separated by columns. The plurality of pixel units 20 may be packaged independently, that is, each pixel unit 20 is packaged by an independent packaging structure, and there is a gap between the packaging structures corresponding to each pixel unit 20, which are independent of each other, so as to realize pixel-level packaging; or column-based packaging may be adopted, that is, a plurality of pixel units 20 in a column are packaged together, and there is a gap between the packaging structures corresponding to the pixel units 20 in different columns, which are independent of each other, so as to realize pixel-column-level packaging; or row-based packaging may be adopted, that is, a plurality of pixel units 20 in a row are packaged together, and there is a gap between the packaging structures corresponding to the pixel units 20 in different rows, which are independent of each other, so as to realize pixel-row-level packaging.

The size of the display screen 1 in the first direction X and/or the second direction Y can be changed. There is a non-zero angle between them, that is, the size of the LED display panel 12 in the first direction X and/or the second direction Y can change. The support structure 30 can extend along the direction of the size change of the LED display panel 12, that is, the support structure 30 can extend along the first direction X and/or the second direction Y. Exemplarily, please refer to Figures 1 and 5 in combination. The size of the LED display panel 12 in the first direction X and/or the second direction Y can change, and then the multiple support structures 30 can all extend along the first direction X or the second direction Y. In some other embodiments, the size of the LED display panel 12 in the first direction X and the second direction Y can change, and then the multiple support structures 30 can all extend along the first direction X or the second direction Y; or some of the multiple support structures 30 can extend along the first direction X, and other support structures 30 can extend along the second direction Y.

In this embodiment, the elastic modulus of the support structure 30 is relatively high, and the support structure 30 extends along the direction of the size change of the display screen 1 including the LED display panel 12, which can reduce the obstruction of the support structure 30 on the size change of the display screen 1, so that it can have a higher pressure bearing capacity while ensuring the ductility of the display screen 1. Through testing, compared with the LED display panel 12 without the support structure 30, when subjected to the same pressure, the maximum strain of the inorganic material layer such as the interlayer dielectric layer 405 and the gate insulation layer 403 in the LED display panel 12 provided with the support structure 30 is reduced by 30% to 40%, indicating that the pressure bearing capacity of the LED display panel 12 can be improved by providing the support structure 30.

In some other embodiments, the display screen 1 may include three, five or other side edges connected end to end in sequence. The size of the display screen 1 on any of the side edges may vary, and the support structure 30 may extend along the direction in which the size of the display screen 1 changes.

In some other embodiments, the size of the display screen 1 in the third direction (not shown) may also change, and the third direction and the extension direction of multiple sides of the display screen 1 are at an angle. For example, the third direction may be the extension direction of the diagonal line of the display screen 1. The support structure 30 may also extend along the third direction.

In this embodiment, the elastic modulus of the support structure 30 is relatively high, and the support structure 30 extends along the third direction, thereby reducing the obstruction of the support structure 30 to the dimensional change of the display screen 1 in the third direction, thereby ensuring the ductility of the display screen 1 while having a higher pressure-bearing capacity.

Please refer to FIG. 5 and FIG. 6 . FIG. 6 is a schematic diagram of the internal structure of the LED display panel 12 shown in FIG. 4 in other embodiments.

In some embodiments, as shown in FIG. 5 , the extension directions of the multiple support structures 30 may all be the same; as shown in FIG. 6 , the multiple support structures 30 may also include a first support structure 301 and a second support structure 302 , and there is an angle between the extension direction of the first support structure 301 and the extension direction of the second support structure 302 .

In this embodiment, the display screen 1 can be bent along the first direction X, the first support structure 301 can extend along the first direction X, the second support structure 302 can extend along the second direction Y, and the second support structure 302 can be arranged alternately with the first support structure 301. In this embodiment, the first support structure 301 and the second support structure 302 jointly provide support, which can further improve the pressure bearing capacity of the LED display panel 12, and further improve the reliability and service life of the display screen 1 and the electronic device 100.

Please refer to FIG. 7 , which is a schematic diagram of the internal structure of the LED display panel 12 shown in FIG. 4 in some other embodiments.

In some embodiments, as shown in FIG7 , at least one of the multiple support structures 30 includes multiple support structures 303 arranged at intervals, and the multiple support structures 303 are arranged along the first direction X or the second direction Y. The sizes of the multiple support structures 303 may be the same, or the size of one support structure 303 may be different from the sizes of the other support structures 303 .

In some embodiments, the support structure 30 may extend along a straight line, a curve, or an irregular line. The embodiments of the present application do not limit the specific structure of the support structure 30 .

Please refer to FIG. 8 , which is a schematic diagram showing the distribution of signal transmission lines of the LED display panel 12 shown in FIG. 5 .

Exemplarily, the LED display panel 12 includes a plurality of signal transmission lines and a plurality of driving units (not shown). The plurality of driving units are connected to the plurality of pixel units 20, and the plurality of driving units are used to respond to signals and make the plurality of pixel units 20 emit light according to the signals. The signal transmission lines are connected to the plurality of pixel units 20 and the plurality of driving units, and are used to transmit signals to the plurality of pixel units 20 and the plurality of driving units.

Exemplarily, the plurality of signal transmission lines may include a gate signal line, a power signal line and a data signal line. The gate signal line is used to transmit a gate drive signal, the power signal line is used to transmit a power signal, and the data signal line is used to transmit a data signal. The power signal line and the data signal line extend in a row direction, and the gate signal line extends in a column direction.

Exemplarily, the power signal line and the data signal line extending in the row direction are serpentine. In the present embodiment, the display screen 1 including the LED display panel 12 is bent along the first direction X, that is, bent along the column direction. The power signal line and the data signal line are serpentine and have good ductility, so that during the bending process of the display screen 1, the power signal line and the data signal line can be deformed with the bending of the display screen 1, releasing the stress generated by the bending, avoiding cracks in the power signal line and the data signal line due to stress concentration, causing black flash and other problems, and improving the reliability of the display screen 1. Exemplarily, the power signal line and the data signal line can be made of metal materials with good ductility such as aluminum, copper, and titanium aluminum alloy.

Exemplarily, the gate signal line extending in the column direction may be in a straight line. In the embodiment of the present application, the display screen 1 including the LED display panel 12 is bent in the first direction X, that is, in the column direction, so that no stress is generated on the structure in the column direction. The gate signal line extending in the column direction may be in a straight line without affecting the bending effect of the display screen 1, and can be prepared by the existing straight line routing process, which is convenient for the process. The process change is smaller. For example, the gate signal line can also be serpentine. The gate signal line can be made of a metal material with good ductility such as aluminum, copper, titanium aluminum alloy, etc.

Please refer to FIG. 9, which is a schematic diagram of the internal structure of the LED display panel 12 shown in FIG. 8 cut along A-A. The cross section cut along A-A passes through a plurality of pixel units 20 in one row and a plurality of support structures 30 arranged at intervals between the plurality of pixel units 20. Different profile line shapes and marks in FIG. 9 (for example, "M1", "MC", "M2", "M3" and "M4") represent different materials, and structures with the same profile line shape and mark are made of the same material and prepared by the same process. In addition, the dotted lines in FIG. 9 divide the LED display panel 12 into two support areas and a display area, wherein the two support areas are respectively located on both sides of the display area. It should be noted that the support structure can be located in the support area, and the support structure can also have a part of the structure located outside the support area, the pixel unit can be located in the display area, and the pixel unit can also have a part of the structure located outside the pixel unit, the support area and the display area can also not be in contact, and there can also be a part of the structure of the drive unit between the two. FIG. 9 only illustrates the division method of the support area and the display area in some embodiments, and cannot be considered as a limitation on the position of the support structure, the pixel unit and the drive unit.

In some embodiments, the LED display panel 12 may include a substrate 121, and a driving layer 122, a light-emitting layer 123, a touch layer 124, and an anti-reflection layer 125 fixed on the same side of the substrate 121. The driving layer 122 is located between the substrate 121 and the light-emitting layer 123, and is used to respond to a signal and drive the light-emitting layer 123 to emit light according to the signal. The touch layer 124 and the anti-reflection layer 125 are sequentially stacked on the upper side of the light-emitting layer 123. In an embodiment of the present application, the side of the light-emitting layer 123 away from the substrate 121 is the upper side, and the side of the light-emitting layer 123 close to the substrate 121 is the lower side. The support structure 30 includes a third sub-support structure 33, a first sub-support structure 31, and a second sub-support structure 32 stacked in the thickness direction. Among them, the third sub-support structure 33 is arranged on the touch layer 124 and the anti-reflection layer 125, the second sub-support structure 32 is arranged on the driving layer 122, and the first sub-support structure 31 is arranged on the light-emitting layer 123.

In some other embodiments, the LED display panel 12 may not include one or more of the driving layer 122, the touch layer 124, and the anti-reflection layer 125. For example, when the LED display panel 12 adopts passive driving, the driving layer 122 may not be included, but the signal transmission is performed through the metal wiring, thereby driving the light-emitting layer 123 to emit light. Accordingly, the support structure 30 may not include the second sub-support structure 32 and/or the third sub-support structure 33.

The substrate 121 may provide a flexible supporting substrate for each layer stacked thereon, which may include, but is not limited to, a first substrate material layer PI1, an insulating layer 1211, and a second substrate material layer PI2 stacked sequentially from bottom to top. In some embodiments of the present application, the insulating layer 1211 or the second substrate material layer PI2 in the substrate 121 may be omitted to simplify the structure of the substrate 121.

Exemplarily, the first substrate material layer PI1 can be made of a flexible polyimide substrate material, and can also be made of flexible materials such as polyethylene terephthalate (PET), paper, metal, ultra-thin peeling, etc. The second substrate material layer PI2 can be made of a flexible polyimide substrate material, and can also be made of flexible materials such as polyethylene terephthalate (PET), paper, metal, ultra-thin peeling, etc. The first substrate material layer PI1 and the second substrate material layer PI2 can be made of the same material or different materials. The insulating layer 1211 can be made of silicon oxide or silicon nitride material. The insulating layer 1211 is an inorganic material layer, which is also prone to cracks under the action of bending. If cracks appear in the insulating layer 1211, water and oxygen will also enter the OLED light-emitting device along the cracks, causing black spots to appear on the OLED flexible display 1.

Exemplarily, the substrate 121 is bendable, so that the LED display panel 12 composed of the substrate 121 and the components prepared on the upper side of the substrate 121 can also be bent, and then the display screen 1 including the LED display panel 12 can also be bent.

Among them, a plurality of driving units 40 are located in the driving layer 122, and a plurality of pixel units 20 are located in the light-emitting layer 123. The plurality of driving units 40 are located between the plurality of pixel units 20 and the substrate 121. The plurality of driving units 40 are connected to the plurality of pixel units 20, and the plurality of driving units 40 are used to respond to signals and make the plurality of pixel units 20 emit light according to the signals. The plurality of first sub-support structures 31 and the plurality of pixel units 20 are arranged in the same layer, that is, the plurality of supporting structures 30 and the plurality of pixel units 20 are fixed on the same side of the substrate 121. The second sub-support structure 32 is located at the lower side of the first sub-support structure 31, and the plurality of driving units 40 and the plurality of supporting structures 30 are arranged alternately.

Exemplarily, the driving unit 40 includes a plurality of stacked second functional layers, and the second sub-support structure 32 includes a plurality of stacked second support members 321, and the plurality of second support members 321 are respectively made of the same material as some of the plurality of second functional layers of the driving unit 40, so that the plurality of second support members 321 can be manufactured through the same process as some of the plurality of second functional layers. The support structure 30 can be manufactured without adding additional processes, thereby improving the pressure bearing capacity of the LED display panel 12 without additionally increasing the manufacturing cost.

Exemplarily, the plurality of second support members 321 correspond to the plurality of second functional layers one by one, and the second support members 321 and the corresponding second functional layers have the same material and thickness. The plurality of second support members 321 are stacked in sequence in the thickness direction, and at least one of the plurality of second functional layers is located in the same layer as the other second functional layers and is staggered, that is, in the stacking direction, the number of the plurality of second support members 321 of the second sub-support structure 32 is greater than the number of the plurality of second functional layers of the pixel unit 20. Because the second support members 321 and the corresponding second functional layers have the same material and thickness, the elastic modulus of the LED display panel 12 in the support area is higher than that in the display area, so as to achieve The support structure 30 has the technical effect of increasing the pressure-bearing capacity of the LED display panel 12 .

Exemplarily, the driving unit 40 may be a thin film transistor (TFT) or a micro IC (micro integrated circuit). Among them, the TFT may include a low temperature polysilicon (LTPS) TFT, a-Si (amorphous silicon) TFT, indium gallium zinc oxide (IGZO) TFT, low temperature polycrystalline oxide (LTPO) TFT, etc.

Exemplarily, a driving unit 40 may include one or more TFTs. The multiple TFTs may be of the same type, or at least one TFT may be of a different type from the other TFTs. The embodiment of the present application is described by taking a TFT as a low temperature polysilicon (LTPS) TFT as an example.

In some embodiments, the multiple second functional layers of the driving unit 40 may include a first buffer layer (buffer) 401, an active layer 402, a gate insulator (GI) 403, a gate (gate) G, a first metal grid line M1, an inner metal dielectric (IMD) 404, a metal capacitor (metal capacitance, MC), an interlayer dielectric layer (inner layer dielectric, ILD) 405, a source (source) S, a drain (drain) D, and a second metal grid line M2. One or more layers are not limited to this in the embodiments of the present application.

The active layer 402 is formed on the upper side of the first buffer layer 401. The first buffer layer 401 can be made of inorganic materials such as silicon oxide and/or silicon nitride, and is used to achieve chemical ion buffering to prevent impurity ions from the substrate 121 from entering the active layer 402 and affecting the performance of the TFT; it can also play a role in heat preservation, so that the active layer 402 has a sufficiently high surface temperature during the crystallization process; it can also play a role in isolating water and/or oxygen.

Among them, the active layer 402 is mainly formed by LTPS, and the active layer 402 is the semiconductor layer of the TFT, and can form a channel region, a source region, and a drain region by doping different ions. Please refer to Figure 9, the part of the middle of the LTPS covered by the gate G is the channel region, and the two parts on both sides of the LTPS are conductors, serving as the source region and the drain region respectively.

The gate insulating layer 403 is formed on the upper side of the active layer 402 to insulate and isolate the active layer 402 from the gate G.

The gate G is formed on the upper side of the gate insulating layer 403 , and the switching state of the TFT can be adjusted by applying different voltages to the gate G.

The first metal grid line M1 is formed on the gate insulating layer 403 and can be formed simultaneously with the gate G. M1 can be used as a gate signal line, connected to the gate G of the TFT, and used to transmit a gate drive signal to the gate G of the TFT. The TFT is turned on in response to the gate drive signal, and allows the data signal and the power signal to refresh the information of the TFT. Exemplarily, M1 can be made of metal materials such as molybdenum.

The intermetallic dielectric layer 404 may be used as an insulating layer between the first metal grid line M1 and the metal capacitor MC and as a dielectric layer of the metal capacitor MC.

The metal capacitor MC serves as an upper electrode plate of the capacitor and other signal transmission lines, and the first metal grid line M1 and/or the gate G can also serve as a lower electrode plate of the capacitor.

The interlayer dielectric layer 405 serves as an insulating layer between the source S, the drain D and the gate G.

The source electrode S is formed on the upper side of the interlayer dielectric layer 405 and is electrically connected to the source region of the active layer 402 .

The drain electrode D is formed on the upper side of the interlayer dielectric layer 405 and is electrically connected to the drain region of the active layer 402 .

The second metal grid line M2 is connected to the metal capacitor MC through a via hole on the interlayer dielectric layer 405 , and the interlayer dielectric layer 405 can be used as an insulating layer between the second metal grid line M2 and the metal capacitor MC and other structures.

Exemplarily, the second metal mesh line M2 may also be formed simultaneously with the source S and the drain D to serve as a driving line for the source S and the drain D.

Exemplarily, the first buffer layer 401, the gate insulating layer 403, the intermetallic dielectric layer 404 and the interlayer dielectric layer 405 of the driving unit 40 are made of inorganic materials such as silicon oxide and/or silicon nitride, which are prone to cracks under pressure. In the embodiment of the present application, the plurality of driving units 40 are arranged at intervals, which can avoid the formation of large pieces of inorganic material layers on the LED display panel 12, and can effectively avoid the problem of water and/or oxygen penetration caused by cracking of the inorganic material layer in the display screen 1 including the LED display panel 12 in the scene of bending, curling, other deformation, etc.; it can also avoid the serious cracks of the inorganic material layer from damaging the metal circuit inside the LED display panel 12, thereby avoiding the problems of black flash, touch failure, etc. on the display screen 1, and improving the reliability of the display screen 1. In addition, avoiding the formation of large pieces of inorganic material layers on the LED display panel 12 can also prevent crack growth and avoid large-area pixel failure.

Among them, the structure shown in Figure 8 only illustrates one implementation method of the drive unit 40 and cannot be understood as a limitation on the structure of the drive unit 40. The drive unit 40 can also have more or less second functional layers than in the embodiment shown in Figure 8, and the embodiments of the present application are not limited to this.

Exemplarily, the second sub-support structure 32 of the support structure 30 may include nine second support members 321 stacked in sequence. The nine second support members 321 may be made of the same material and have the same thickness as the first buffer layer 401, the active layer 402, the gate insulating layer 403, the first metal grid line M1, the intermetallic dielectric layer 404, the metal capacitor MC, the interlayer dielectric layer 405, and the second metal grid line M2, so that the second sub-support structure 32 can be manufactured through the same process as the driving unit 40. Among them, the active layer 402 may be a-Si.

In some other embodiments, at least one of the nine second support members 321 of the second sub-support structure 32 may be Different materials and/or thicknesses than the corresponding stacks described above.

In some other embodiments, the number of the second supporting members 321 of the second sub-support structure 32 may be less than nine, for example, six, seven, etc. The number of the second supporting members 321 of the second sub-support structure 32 may be more than nine, for example, ten, thirteen, etc., which is not limited in the embodiments of the present application.

Exemplarily, the driving layer 122 of the LED display panel 12 may include a first planarization layer (planarization) PLN1. "PLN1" is used as a mark of the first planarization layer to illustrate the position of the first planarization layer in the accompanying drawings. The first planarization layer PLN1 covers a plurality of driving units 40 and a plurality of second sub-support structures 32, and is filled between the plurality of driving units 40 and the plurality of second sub-support structures 32, and plays a role in flattening, insulating and stage-by-stage protection of the fluctuations of the element.

Exemplarily, a single pixel unit 20 may include a single sub-pixel unit, or may include multiple sub-pixel units, each sub-pixel unit being used to emit monochromatic light. The embodiment of the present application is set by taking a single pixel unit 20 including a single sub-pixel unit as an example.

Exemplarily, the pixel unit 20 includes a plurality of first functional layers stacked together, and the first sub-support structure 31 includes a plurality of first support members 311 stacked together. The plurality of first support members 311 are respectively made of the same material as some of the first functional layers in the plurality of first functional layers of the pixel unit 20, so that the plurality of first support members 311 can be manufactured through the same process as some of the first functional layers in the plurality of first functional layers. The support structure 30 can be manufactured without adding additional processes, thereby improving the pressure bearing capacity of the LED display panel 12 without additionally increasing the manufacturing cost.

In some other embodiments, the first sub-support structure 31 may also be manufactured by other processes different from the manufacturing process of the pixel unit 20. For example, after the pixel unit 20 is manufactured, a support member with a high elastic modulus may be manufactured between the pixel units 20 to obtain the first sub-support structure 31.

Exemplarily, the multiple first support members 311 of the first sub-support structure 31 correspond one-to-one to the multiple first functional layers of the pixel unit 20, and the first support members 311 and the corresponding first functional layers have the same material and thickness. The multiple first support members 311 are stacked in sequence in the thickness direction, and at least one of the multiple first functional layers is located in the same layer as the other first functional layers and is staggered, that is, in the stacking direction, the number of the multiple first support members 311 of the first sub-support structure 31 is greater than the number of the multiple first functional layers of the pixel unit 20. Because the first support members 311 and the corresponding first functional layers have the same material and thickness, the elastic modulus of the LED display panel 12 in the support area is higher than the elastic modulus in the display area, so as to achieve the technical effect of increasing the pressure-bearing capacity of the LED display panel 12 through the support structure 30.

Exemplarily, the bottom of the first sub-support structure 31 and the bottom of the pixel unit 20 are located in the same plane, and the maximum distance between the top of the first sub-support structure 31 and the substrate 121 is greater than the maximum distance between the top of the pixel unit 20 and the substrate 121. In some embodiments, a first support member 311 of the first sub-support structure 31 and a first functional layer of the pixel unit 20 can be simultaneously prepared by a half-tone mask process, so that the thickness of the first support member 311 is greater than the thickness of the first functional layer prepared simultaneously therewith, thereby achieving the maximum distance between the top of the first sub-support structure 31 and the substrate 121 being greater than the maximum distance between the top of the pixel unit 20 and the substrate 121.

In this embodiment, the top of the first sub-support structure 31 is higher than the top of the pixel unit 20 in the thickness direction, so that the support structure 30 can bear all or most of the external pressure, further reducing the pressure on the pixel unit 20, thereby further increasing the pressure-bearing capacity of the LED display panel 12.

In some embodiments, the multiple first functional layers may include one or more layers of an anode 201, a pixel definition layer (pixel definition layer) PDL, an OLED device layer 202, a cathode 203, a fourth metal grid line M4, and a capping layer (capping layer, CPL) 204, which are not limited in the embodiments of the present application.

The pixel definition layer PDL includes a plurality of side encapsulation components formed of a photoresist type organic material, and the plurality of side encapsulation components are arranged at intervals. The OLED device layer 202 is arranged between two adjacent side encapsulation components.

Among them, the OLED device layer 202 is used for emitting light, and may include a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EL), an electron transport layer (ETL), an electron injection layer (EIL) and other structures.

The cathode 203 and the anode 201 are respectively located at the upper and lower sides of the OLED device layer 202. The cathode 203 and the anode 201 can receive power signals and data signals, and drive the OLED device layer 202 to emit light in response to the power signals and data signals.

The cap layer 204 is located on the upper side of the cathode 203. The light emitted by the OLED device layer 202 can generate surface plasma resonance with the free electrons on the surface of the cathode 203, thereby generating energy loss. The cap layer 204 can prevent the light emitted by the OLED device layer 202 from generating surface plasma resonance with the free electrons on the surface of the cathode 203, reduce the energy loss of the light emitted by the OLED device layer 202, increase the screen brightness and reduce energy consumption. In addition, the higher the refractive index of the cap layer 204, the smaller the energy loss of the light emitted by the OLED device layer 202. The thickness of the cap layer 204 will also affect the energy of the light emitted by the OLED device layer 202.

The structure shown in FIG8 only illustrates one embodiment of the pixel unit 20, and cannot be understood as a limitation on the structure of the pixel unit 20. The pixel unit 20 may also have more or less first functional layers than those in the embodiment shown in FIG8. There is no limitation on this.

Exemplarily, the second sub-support structure 32 may include six first support members 311 stacked in sequence. The six first support members 311 may be made of the same material and have the same thickness as the anode 201, the pixel definition layer PDL, the OLED device layer 202, the cathode 203, the fourth metal grid line M4, and the cap layer 204, so that the first sub-support structure 31 can be manufactured through the same process as the pixel unit 20.

In some other embodiments, at least one of the six first support members 311 of the first sub-support structure 31 may have a material and/or thickness different from that of the corresponding stacked layers.

In some other embodiments, the number of the first support members 311 of the first sub-support structure 31 may be less than six, for example, four, five, etc. The number of the first support members 311 of the first sub-support structure 31 may be more than six, for example, seven, nine, etc., which is not limited in the embodiments of the present application.

Exemplarily, among the multiple first support members 311, there is a support member PDL1 which is manufactured through the same half-tone mask process as the pixel definition layer PDL, and the thickness of the support member PDL1 is greater than the maximum thickness of the pixel definition layer PDL, so that the maximum distance between the top of the first sub-support structure 31 and the substrate 121 is greater than the maximum distance between the top of the pixel unit 20 and the substrate 121.

In some embodiments, the LED display panel 12 further includes a plurality of first packaging structures 50 , the plurality of first packaging structures 50 correspond one-to-one to the plurality of pixel units 20 , and the first packaging structures 50 are used to package the corresponding pixel units 20 .

In the embodiment of the present application, impurities such as water and/or oxygen enter the pixel unit 20, which will cause the OLED device layer 202 of the pixel unit 20 to fail or the cathode 203 to lose its electrical characteristics, thereby causing the pixel unit 20 to be unable to emit light. By separately encapsulating multiple pixel units 20 through multiple first encapsulation structures 50, it is possible to prevent water and/or oxygen from diffusing between adjacent pixel units 20. Even if the encapsulation structure of a single pixel unit 20 fails, it will not affect other pixel units 20, avoiding a wide range of impacts, thereby avoiding problems such as black spots and partial black screens, and improving the reliability of the LED display panel 12.

In addition, when the display screen 1 including the LED display panel 12 is bent, curled or otherwise deformed, the multiple pixel units 20 will also be subjected to stresses such as compression or pulling. The multiple pixel units 20 are individually encapsulated by the multiple first encapsulation structures 50, and there is space between adjacent pixel units 20, so that when the LED display panel 12 is bent or curled, the pixel unit 20 can release the stress caused by the deformation by being relatively close or relatively far away, thereby reducing the influence of the stress caused by the deformation on the pixel unit 20 itself, improving the reliability of the LED display panel 12, and the reliability and service life of the display screen 1 and the electronic device 100; the pixel unit 20 can release the stress caused by the deformation by being relatively close or relatively far away, and can also improve the bending performance of the display screen 1 including the LED display panel 12 to achieve a smaller bendable radius.

Exemplarily, the first encapsulation structure 50 can be made of one or more inorganic materials such as silicon oxide, silicon nitride or aluminum oxide. In this embodiment, multiple pixel units 20 are individually encapsulated by multiple first encapsulation structures 50, that is, multiple first encapsulation structures 50 are independent of each other, which can avoid the formation of a large encapsulation layer on the LED display panel 12, and can effectively avoid the problem of water and/or oxygen penetration caused by cracking of the encapsulation layer when the display screen 1 including the LED display panel 12 is bent, curled, or other deformed. In addition, multiple first encapsulation structures 50 are independent of each other, which avoids the formation of a large encapsulation layer on the LED display panel 12, and can also prevent crack growth, thereby avoiding large-area pixel failure.

Exemplarily, the first encapsulation structure 50 includes a top encapsulation structure 51 and a bottom encapsulation layer 52, the bottom encapsulation layer 52 is fixed to the bottom of the pixel unit 20, at least part of the structure of the top encapsulation structure 51 covers the upper surface of the pixel unit 20, and the top encapsulation structure 51 is in sealed contact with the bottom encapsulation layer 52.

In this embodiment, the top packaging structure 51 can block water and/or oxygen from the upper side of the pixel unit 20, and the bottom packaging layer 52 can block water and/or oxygen from the lower side of the pixel unit 20, thereby improving the packaging performance of the first packaging structure 50 and further improving the reliability of the LED display panel 12, the display screen 1 and the electronic device 100.

Exemplarily, the top encapsulation structure 51 may be a thin film encapsulation (TFE) structure.

Exemplarily, the top encapsulation structure 51 and the bottom encapsulation layer 52 may be made of the same material or different materials.

Exemplarily, the first encapsulation structure 50 can be a single-layer inorganic encapsulation layer, or a multi-layer encapsulation layer in which inorganic layers and organic layers are overlapped. For example, it can be a three-layer structure of inorganic layer-organic layer-inorganic layer stacked in sequence, or a four-layer structure of inorganic layer-organic layer-inorganic layer stacked in sequence, or a structure of five or more layers stacked in layers, etc.

Exemplarily, the first packaging structure 50 can be used to package a single pixel unit 20 to achieve pixel-level packaging; it can also be used to package a column of pixel units 20 to achieve pixel-column-level packaging; it can also be used to package a row of pixel units 20 to achieve pixel-row-level packaging.

In some embodiments, at least one of the multiple support structures 30 includes two fourth support members 341, and the two fourth support members 341 are respectively made of the same material as the top encapsulation structure 51 and the bottom encapsulation layer 52, so that the two fourth support members 341 can be manufactured through the same process as the top encapsulation structure 51 and the bottom encapsulation layer 52. The support structure 30 can be manufactured without adding additional processes, thereby improving the pressure bearing capacity of the LED display panel 12 without additionally increasing the manufacturing cost.

In some other embodiments, at least one of the two fourth support members 341 may have a material and/or thickness different from that of the corresponding stacked layer.

In some other embodiments, the second sub-support structure 32 may include a fourth support member 341, and the fourth support member 341 may be made of the same material as the top encapsulation structure 51 or the bottom encapsulation layer 52. The number of the fourth support members 341 of the second sub-support structure 32 may be more than two, for example, three, five, etc., which is not limited in the embodiments of the present application.

Exemplarily, the LED display panel 12 also includes a flat layer PLN, which is located on the upper side of the multiple first sub-support structures 31 and the multiple pixel units 20, and the thickness of the flat layer PLN in the support area is less than the thickness of the flat layer PLN in the display area, and the elastic modulus of the flat layer PLN is less than the elastic modulus of any of the multiple first functional layers of the pixel unit 20. "PLN" is used as a mark for the flat layer to facilitate the illustration of the position of the flat layer in the accompanying drawings. Among them, the thickness of the flat layer PLN at different positions in the support area and/or the display area may be different. The thickness of the flat layer PLN in the support area is the maximum value of the thickness of the flat layer PLN at any position in the support area, and the thickness of the flat layer PLN in the display area is the minimum value of the thickness of the flat layer PLN at any position in the display area.

In this embodiment, the elastic modulus of the flat layer PLN is smaller than the elastic modulus of the multiple first functional layers of the pixel unit 20, that is, the elastic modulus of the flat layer PLN is smaller than the elastic modulus of other structures in the support area and the display area of the LED display panel 12. The thickness of the flat layer PLN of the LED display panel 12 in the support area is smaller than the thickness of the flat layer PLN in the display area, that is, the proportion of the flat layer PLN in the structure of the support area is smaller than the proportion in the structure of the display area, and other structures with higher elastic modulus account for a higher proportion in the support area than in the display area, so that the elastic modulus of the LED display panel 12 in the support area is higher than the elastic modulus in the display area, so as to achieve the technical effect of increasing the pressure-bearing capacity of the LED display panel 12 through the support structure 30.

In some embodiments, the light emitting layer 123 may further include a third metal grid line M3 and a second planarization layer PLN2 disposed between the plurality of pixel units 20 and the plurality of driving units 40. "PLN2" is used as a mark of the second planarization layer to facilitate the illustration of the position of the second planarization layer in the drawings. The third metal grid line M3 can realize electrical connection between the pixel units 20.

In some embodiments, referring to FIG. 8 , the LED display panel 12 may further include a touch layer 124 and/or an anti-reflection layer 125 disposed on the upper side of the plurality of pixel units 20 .

Exemplarily, at least one support structure 30 among the multiple support structures 30 includes a third sub-support structure 33, the third sub-support structure 33 is located on the upper side of the first sub-support structure 31, the touch layer 124 and/or the anti-reflection layer 125 includes a plurality of stacked third functional layers, the third sub-support structure 33 includes a plurality of stacked third support members 331, and the plurality of third support members 331 are respectively made of the same material as some of the third functional layers in the plurality of third functional layers, so that the plurality of third support members 331 can be manufactured through the same process as some of the third functional layers in the plurality of third functional layers.

The touch layer 124 may include one or more of a second buffer layer 1241, a fifth metal grid line M5, a third planarization layer 1242, a sixth metal grid line M6, and a fourth planarization layer 1243. The fifth metal grid line M5 serves as a metal bridge layer of the touch layer 124, and the sixth metal grid line M6 serves as an electrode layer of the touch layer 124.

Among them, the second buffer layer 1241 can be used as a thin film package. The entire second buffer layer 1241 is set on multiple pixel units 20, so that the LED display panel 12 has a whole-surface packaging structure, that is, a panel-level packaging structure. In the embodiment of the present application, the LED display panel 12 has both a pixel-level packaging structure and a panel-level packaging structure, which is beneficial to improving the water and oxygen barrier effect of the LED display panel 12. In addition, the second buffer layer 1241 can be a single-layer inorganic packaging layer, or it can be a packaging layer of a multi-layer stacked structure in which an inorganic layer and an organic layer are overlapped. For example, it can be a three-layer structure of an inorganic layer-organic layer-inorganic layer stacked in sequence, or it can be a four-layer structure of an inorganic layer-organic layer-inorganic layer stacked in sequence, or it can be a five-layer or more stacked structure, etc.

The anti-reflection layer 125 may include a plurality of black matrices BM (black matrix) and a plurality of RGB color filter (CF) glasses 1251 arranged at intervals, and a fifth planarization layer 1252 covering the plurality of black matrices BM and the plurality of RGB color filter glasses 1251. The anti-reflection layer 125 is used to block the reflected light of the electrode of the pixel unit 20, thereby improving the contrast of the display screen 1.

In some other embodiments, the anti-reflection layer 125 may not include the fifth planarization layer 1252 .

In some other embodiments, the anti-reflection layer 125 may also adopt a C-POL (circular-polarizer) solution, that is, the circular polarizer is attached to the upper surface of the touch layer 124 by a solid optically clear adhesive (OCA).

For example, as shown in FIG8 , the fifth metal grid line M5 and the sixth metal grid line M6 of the touch layer 124 and the black matrix BM of the anti-reflection layer 125 may be located on the upper side of the first support structure 301 and reused as the third sub-support structure 33 of the support structure 30 , thereby further improving the support performance of the support structure 30 .

Exemplarily, the touch layer 124 is formed by a TOE (touch on encapsulation) process, that is, the touch layer 124 is formed on the upper side of the encapsulation layer of the pixel unit 20 .

In the embodiment of the present application, in order to realize electrical connection between the pixel units 20 encapsulated by each pixel-level encapsulation structure of the LED display panel 12, so as to realize control of the display of the entire LED display panel 12, multiple metal grid lines (first metal grid line M1, second metal grid line M2, third metal grid line M3, fourth metal grid line M4) in the LED display panel 12 can be used as data transmission lines. The following will illustrate the way in which multiple metal grid lines realize electrical connection between pixel units 20 with reference to the accompanying drawings.

Please refer to FIG. 8 and FIG. 10 in combination. FIG. 10 is a schematic diagram of the internal structure of the LED display panel 12 shown in FIG. 8 cut along the B-B section. The section cut along the B-B section passes through the third metal grid line M3, showing the electrical connection between the pixel units 20 arranged in the row direction. Different profile line shapes and marks in FIG. 10 (for example, "M1", "MC", "M2" and "M4") represent different materials, and the structures with the same profile line shape and mark are made of the same material and prepared by the same process. In addition, the dotted line in FIG. 10 divides the LED display panel 12 into two support areas and a display area, wherein the two support areas are respectively located on both sides of the display area. It should be noted that the support structure can be located in the support area, and the support structure can also have a part of the structure located outside the support area, the pixel unit can be located in the display area, and the pixel unit can also have a part of the structure located outside the pixel unit, the support area and the display area can also not be in contact, and there can also be a part of the structure of the driving unit between the two. FIG. 10 only illustrates the division method of the support area and the display area in some embodiments, and cannot be regarded as a limitation on the position of the support structure, the pixel unit and the driving unit.

There may be a plurality of third metal mesh lines M3, which are used as power signal lines and data signal lines respectively for transmitting power signals and data signals.

The cathode 203 of each pixel unit 20 is connected to the third metal grid line M3 respectively. The third metal grid line M3 transmits the power signal and the data signal to the OLED device layer 202, and the OLED device layer 202 responds to the power signal and the data signal and emits light. Since the cathode 203 of each OLED device layer 202 is connected through the third metal grid line M3, the third metal grid line M3 can simultaneously transmit the power signal and the data signal to the cathode 203 of all OLED device layers 202 to achieve synchronous control.

The anode 201 is connected to the third metal grid line M3 through the fourth metal grid line M4. The third metal grid line M3 transmits the power signal and the data signal to the OLED device layer 202. The OLED device layer 202 responds to the power signal and the data signal and emits light.

The third metal grid line M3 may also be connected to the drain electrode D to transmit the data signal and the power signal to the source electrode S and the drain electrode D.

Among them, in the embodiment of the present application, the support structure 30 is located between two adjacent pixel units 20 arranged in the same row. There is at least one metal piece M3 in the support structure 30 that uses the same material as the third metal grid line M3 and is prepared by the same process. The metal piece M3 can be the part of the third metal grid line M3 located between the first sub-support structure 31 and the second sub-support structure 32. As shown in Figures 8 and 10, the third metal grid line M3 can connect the pixel units 20 located on both sides of the support structure 30 through the metal piece M3 in the support structure 30, thereby realizing the electrical connection of multiple pixel units 20 arranged in the same row.

Exemplarily, the material of the third metal grid line M3 may be aluminum, copper, titanium aluminum alloy, molybdenum, or the like.

10 , the third metal grid line M3 may be disposed between the driving unit 40 and the pixel unit 20. In some other embodiments, the third metal grid line M3 may also be disposed in the same layer as a portion of the second functional layer of the driving unit 40, such as the interlayer dielectric layer 405 or the metal interlayer dielectric layer 404.

As shown in FIG. 8 and FIG. 10 , there may be a plurality of second metal mesh lines M2 , which are used as data signal lines and power signal lines respectively to transmit the data signal and the power signal to the source S and the drain D.

In addition, the embodiment of the present application realizes the electrical connection of the pixel units 20 arranged in rows and columns by setting two layers of metal grid lines (second metal grid lines M2 and third metal grid lines M3). In this embodiment, there may be multiple third metal grid lines M3, which extend in the row direction or in the column direction, respectively, to realize the electrical connection of the pixel units 20 arranged in rows and columns. The third metal grid lines M3 extending in the row direction and the third metal grid lines M3 extending in the column direction can be bypassed by the second metal grid lines M2 at the intersection, that is, the third metal grid lines M3 extending in the row direction can be connected to the second metal grid lines M2 located in the lower layer, bypass the third metal grid lines M3 extending in the column direction and return to the upper layer of the second metal grid lines M2; the third metal grid lines M3 extending in the column direction can be connected to the second metal grid lines M2 located in the lower layer, bypass the third metal grid lines M3 extending in the row direction and return to the upper layer of the second metal grid lines M2.

Please refer to FIG8 and FIG11 , FIG11 is a schematic diagram of the internal structure of the LED display panel 12 shown in FIG8 cut along CC. The cross section cut at passes through the first metal grid line M1, showing the electrical connection between the pixel units 20 arranged in the column direction.

The gates G of the driving units 40 are connected to the first metal grid lines M1 respectively. The first metal grid lines M1 can be used as gate signal lines. The first metal grid lines M1 transmit gate driving signals to the TFTs, and the TFTs respond to the gate driving signals and are in an open state.

Exemplarily, the material of the first metal grid line M1 may be molybdenum or the like.

The embodiment of the present application also provides a manufacturing process for an LED display panel 12. The manufacturing process obtains the LED display panel 12 shown in FIG9 through steps 001 to 005. Please refer to FIGS. 12 to 15 in combination. FIG. 12 is a partial structural schematic diagram of the LED display panel 12 prepared by step 001 of the manufacturing process of the embodiment of the present application, FIG. 13 is a partial structural schematic diagram of the LED display panel 12 prepared by steps 001 and 002 of the manufacturing process of the embodiment of the present application, FIG. 14 is a partial structural schematic diagram of the LED display panel 12 prepared by steps 001 to 003 of the manufacturing process of the embodiment of the present application, and FIG. 15 is a partial structural schematic diagram of the LED display panel 12 prepared by steps 001 to 004 of the manufacturing process of the embodiment of the present application.

The detailed steps of the production process are as follows:

Step 001: As shown in FIG12 , prepare a substrate 121, a TFT of a driving layer 122, and a second sub-support structure 32 of a support structure 30. In the embodiment of the present application, taking a top-gate low-temperature polysilicon TFT as an example, the layer structure setting method of the substrate 121 can refer to FIG12 . Among them, the substrate 121 can be formed on a bearing layer, and the bearing layer can be made of materials such as glass to play a bearing role in the manufacturing process of the LED display panel 12.

A first substrate material layer PI1 and a second substrate material layer PI2 are prepared on the carrier layer by a coating process, and the thickness of the first substrate material layer PI1 and the second substrate material layer PI2 are both in the range of 5um to 15um. An insulating layer 1211 is prepared between the first substrate material layer PI1 and the second substrate material layer PI2 by a chemical vapor deposition (CVD) process. The insulating layer 1211 is formed by stacking a silicon dioxide layer with a thickness of 600nm and an a-Si layer with a thickness of 5nm in sequence.

The first buffer layer 401, the a-Si layer and the partial structure of the second sub-support structure 32 are continuously prepared on the upper side of the second substrate material layer PI2 by CVD process. The silicon dioxide layer has a thickness of The silicon nitride layer and the thickness are The silicon dioxide layers are stacked in sequence. The p-Si (low temperature polysilicon) is formed by using the excimer laser annealing crystallization (ELA) method for part of the a-Si, and the p-Si is patterned by the exposure, development and etching process to obtain the active layer 402 and the partial structure of the second sub-support structure 32.

The gate insulating layer 403, the first metal grid line M1, the intermetallic dielectric layer 404, the metal capacitor MC, the interlayer dielectric layer 405, the second metal grid line M2 and the partial structure of the second sub-support structure 32 are prepared. The gate G is formed simultaneously with the first metal grid line M1, and the source S and the drain D are formed simultaneously with the second metal grid line M2. Among them, the first metal grid line M1, the metal capacitor MC and the second metal grid line M2 are metal layers, which are prepared by physical vapor deposition (PVD) process, and are all patterned by exposure, development and etching process; the gate insulating layer 403, the intermetallic dielectric layer 404 and the interlayer dielectric layer 405 are inorganic layers, which are prepared by CVD process, and are all patterned by exposure, development and etching process.

A deep hole is etched on the above structure. The deep hole is located between the support structure 30 and the drive unit 40. The deep hole penetrates all the stacking layers from the interlayer dielectric layer 405 to the substrate. The deep hole can be etched through by a dry etching process for etching the non-metallic layer pattern at one time after the second metal grid line M2 is patterned, so as to avoid etching residues formed by the climbing of the metal layer; or through-hole etching can be performed when each layer of the thin film is patterned, and the deep hole preparation is completed cumulatively. In addition, the deep hole can be etched to the lower side of the first buffer layer 401, that is, the deep hole has an over-engraving depth to ensure that there is no residue of the first buffer layer 401 at the deep hole.

Step 002 : As shown in FIG. 13 , complete TFT planarization and prepare the third metal grid line M3 and the metal member M3 of the support structure 30 .

Preparation of the first planarization layer PLN1: A layer of organic material is prepared by slit coating process, and the organic material layer is patterned by exposure, development and baking to form vias, thereby obtaining the first planarization layer PLN1. The vias are used for electrical connection.

Prepare the third metal grid line M3 and the metal member M3 of the support structure 30, and the third metal grid line M3 can be connected to one or more of the second metal grid line M2, the first metal grid line M1, and the active layer 402 through a via. FIG13 only shows the via connection between the third metal grid line M3 and the second metal grid line M2, and the connection at other positions requires pre-fabrication of vias in the relevant stacking layers.

Prepare a second planarization layer PLN2 and reserve vias.

Step 003: As shown in FIG. 14 , prepare the pixel unit 20 of the light-emitting layer 123 , encapsulate the pixel unit 20 , and prepare a partial structure of the support structure 30 .

An inorganic material layer formed of silicon oxide and silicon nitride is prepared as a bottom encapsulation layer 52 and a partial structure of the support structure 30. The passivation layer can be reused as the bottom encapsulation layer 52. The inorganic material layer is patterned to form pixel-level islands to achieve pixel-level encapsulation; or to form columns parallel to the bending direction to achieve pixel-column-level encapsulation, and vias are reserved to obtain the bottom encapsulation layer 52.

The anode 201 and the partial structure of the support structure 30 are prepared by PVD. The anode 201 can be made of a thickness of Indium tin oxide oxide, ITO) layer, thickness is The nanosilver layer and thickness are The anode 201 is electrically interconnected with the third metal grid line M3 through the via hole of the second planarization layer PLN2.

The pixel definition layer PDL and the support member PDL1 of the support structure 30 are prepared by a half-tone mask process, and vias are prepared in the pixel definition layer PDL, the bottom encapsulation layer 52 and the second planarization layer PLN2. The thickness of the support member PDL1 is greater than the thickness of the pixel definition layer PDL. On the one hand, the support structure 30 is higher than the pixel unit 20 to facilitate bearing pressure. On the other hand, the support member PDL1 can be reused as a supporting photolithography spacer (PS) of a fine metal mask (FMM), simplifying the preparation process of the OLED device layer 202.

The fourth metal grid line M4 is formed on the upper side of the pixel definition layer PDL and is electrically connected to the third metal grid line M3 through a via hole penetrating the pixel definition layer PDL, the bottom encapsulation layer 52 and the second planarization layer PLN2.

The OLED evaporation layer is prepared by an evaporation process, and the OLED evaporation layer is patterned by a fine metal mask plate, undercut, and laser etching process to obtain a partial structure of the OLED device layer 202 and the support structure 30. In some other embodiments, the OLED evaporation layer can also be patterned by gravure printing, ink jet printing (IJP), laser-induced transfer printing, hard mask etching, and other processes.

The cathode 203, the capping layer 204 and the partial structure of the support structure 30 are prepared.

An inorganic material layer composed of silicon oxide and silicon nitride is prepared by a CVD process, and the inorganic material layer is patterned to obtain a top encapsulation structure 51 of the pixel unit 20 and a partial structure of the support structure 30 .

The planarization is accomplished by preparing the planarization layer PLN through inkjet printing or slit coating process.

An inorganic material layer composed of silicon oxide and silicon nitride is prepared on the upper side of the flat layer PLN by a CVD process. The inorganic material layer can be used as an encapsulation layer of the pixel unit 20, and can also be reused as the second buffer layer 1241 of the touch layer 124. In some other embodiments, the LED display panel 12 may not include the second buffer layer 1241.

Step 004: As shown in FIG. 15 , a touch layer 124 is prepared.

Two metal layers are prepared by PVD process, the two metal layers are separated by an inorganic or organic insulating layer, and the two metal layers are patterned by exposure and development process, respectively, to obtain the fifth metal grid line M5 and the sixth metal grid line M6. In the embodiment of the present application, the two metal layers are separated by the third planarization layer 1242, and the third planarization layer 1242 is made of organic insulating material, which is easy to bend and can avoid cracks during the bending process. While ensuring the bending performance, it effectively prevents impurities such as water and/or oxygen from penetrating through the cracks to affect the pixel unit 20 under the touch layer 124, thereby improving the reliability and service life of the display screen 1 including the LED display panel 12.

An organic layer is prepared by a CVD process as the fourth planarization layer 1243 to planarize the top layer of the touch layer 124 and cover and protect the metal structure of the touch layer 124 .

Step 005: As shown in FIG. 9 , an anti-reflection layer 125 is prepared.

The black matrix BM and R, G, B color group layers are prepared in sequence through a slit coating process, and patterned through an exposure and development method to form an anti-reflection layer 125. The R, G, B color group layers are obtained by arranging a plurality of RGB color film glasses 1251 in a certain order.

An organic layer is prepared by a CVD process as the fifth planarization layer 1252 to achieve protection isolation.

The present application also provides an LED display panel 12. Please refer to FIG. 16, which is a schematic diagram of the internal structure of the LED display panel 12 shown in FIG. 8 cut along A-A in other embodiments. In addition, the dotted line in FIG. 16 divides the LED display panel 12 into two support areas and a display area, wherein the two support areas are respectively located on both sides of the display area. It should be noted that the support structure can be located in the support area, and the support structure can also have a part of the structure located outside the support area, the pixel unit can be located in the display area, and the pixel unit can also have a part of the structure located outside the pixel unit, the support area and the display area may not be in contact, and there may be a part of the structure of the driving unit between the two. FIG. 16 only illustrates the division method of the support area and the display area in some embodiments, and cannot be regarded as a limitation on the position of the support structure, the pixel unit and the driving unit.

As shown in FIG. 16 , in other embodiments, the LED display panel 12 may include a substrate 121, and a driving layer 122, a light-emitting layer 123, a touch layer 124, and an anti-reflection layer 125 fixed to the same side of the substrate 121. The driving layer 122 is located between the substrate 121 and the light-emitting layer 123, and the touch layer 124 and the anti-reflection layer 125 are sequentially stacked on the upper side of the light-emitting layer 123. Most of the structures of the LED display panel 12 shown in FIG. 16 and the LED display panel 12 shown in FIG. 9 and the connection relationship between the structures are the same. Only the different technical features in the two embodiments are described here, and the same technical features in the two embodiments are not repeated.

Exemplarily, a plurality of pixel units 20 are located in the light emitting layer 123. The LED display panel 12 may further include a plurality of second encapsulation structures 61, the plurality of second encapsulation structures 61 correspond one-to-one to the plurality of pixel units 20, and the second encapsulation structures 61 are used to encapsulate the corresponding pixel units 20. The driving unit 40 located in the driving layer 122 includes a third encapsulation structure 62. At least part of the structure of the second encapsulation structure 61 covers the upper surface of the pixel unit 20, and the second encapsulation structure 61 is in sealing contact with the third encapsulation structure 62.

In the embodiment of the present application, the pixel unit 20 is packaged together by the third packaging structure 62 and the second packaging structure 61 located in the driving unit 40, that is, the third packaging structure 62 located in the driving unit 40 replaces the first packaging structure of the LED display panel 12 shown in FIG. The bottom packaging layer 52 of the structure 50 allows the anode 201 of the pixel unit 20 to be directly prepared on the first planarization layer PLN1, eliminating the bottom packaging layer 52 of the LED display panel 12 as shown in FIG. 9 , reducing the number of stacking layers of the LED display panel 12, thereby reducing the thickness of the LED display panel 12 to meet the demand for thinness and lightness; it can also reduce the process steps and reduce costs.

In some embodiments, as shown in FIG. 16 , one or more layers of the first buffer layer 401 , the gate insulating layer 403 , the intermetallic dielectric layer 404 , and the interlayer dielectric layer 405 of the driving unit 40 may be reused as a third packaging structure 62 .

Illustratively, at least one of the plurality of support structures 30 includes a fifth support member 351 , and the fifth support member 351 is made of the same material as the second packaging structure 61 , so that the fifth support member 351 and the second packaging structure 61 can be manufactured through the same process.

Please refer to FIG. 16 and FIG. 17 in combination. FIG. 17 is a schematic diagram of the internal structure of the LED display panel 12 shown in FIG. 8 cut along B-B in other embodiments. In addition, the dotted line in FIG. 17 divides the LED display panel 12 into two support areas and a display area, wherein the two support areas are respectively located on both sides of the display area. It should be noted that the support structure can be located in the support area, and the support structure can also have a part of the structure located outside the support area. The pixel unit can be located in the display area, and the pixel unit can also have a part of the structure located outside the pixel unit. The support area and the display area may not be in contact, and there may be a part of the structure of the driving unit between the two. FIG. 17 only illustrates the division method of the support area and the display area in some embodiments, and cannot be regarded as a limitation on the position of the support structure, the pixel unit and the driving unit.

Exemplarily, as shown in Figures 16 and 17. The third metal grid line M3 is arranged on the inner side of the substrate 121. For example: the third metal grid line M3 can be located on the upper side, lower side or middle part of the second substrate material layer PI2. In the LED display panel 12 shown in Figures 9 and 10, the third metal grid line M3 is arranged on the upper side of the second metal grid line M2, and an insulating layer, that is, a second planarization layer PLN2, needs to be arranged between the third metal grid line M3 and the second metal grid line M2. The third metal grid line M3 of the LED display panel 12 described in Figures 16 and 17 is arranged on the inner side of the substrate 121, rather than on the upper side of the second metal grid line M2, eliminating the insulating layer (the second planarization layer PLN2 shown in Figure 9), reducing the number of stacking layers of the LED display panel 12, thereby reducing the thickness of the LED display panel 12 to meet the demand for lightness and thinness; it can also reduce process steps and reduce costs.

Exemplarily, the third metal grid line M3 can be arranged on the inner side of the second substrate material layer PI2, or on the upper side of the second substrate material layer PI2, and an organic layer can be covered on the upper side of the third metal grid line M3 as a planarization layer or a buffer layer can be prepared on the upper side of the third metal grid line M3.

In the embodiment of the present application, the second metal grid line M2 is electrically connected to the third metal grid line M3 through the first via 70. The first via 70 can penetrate the first buffer layer 401, the gate insulation layer 403, the intermetallic dielectric layer 404 and the interlayer dielectric layer 405, and extend to the inside of the substrate 121. The fourth metal grid line M4 is connected to the second metal grid line M2 through a via.

The embodiment of the present application further provides a manufacturing process for an LED display panel 12. The manufacturing process obtains the LED display panel 12 shown in FIG17 through steps 006 to 011. Please refer to FIGS. 18 to 22 in combination. FIG. 18 is a partial structural schematic diagram of the LED display panel 12 prepared by step 006 of the manufacturing process of the embodiment of the present application, FIG. 19 is a partial structural schematic diagram of the LED display panel 12 prepared by steps 006 and 007 of the manufacturing process of the embodiment of the present application, FIG. 20 is a partial structural schematic diagram of the LED display panel 12 prepared by steps 006 to 008 of the manufacturing process of the embodiment of the present application, FIG. 21 is a partial structural schematic diagram of the LED display panel 12 prepared by steps 006 to 009 of the manufacturing process of the embodiment of the present application, and FIG. 22 is a partial structural schematic diagram of the LED display panel 12 prepared by steps 006 to 010 of the manufacturing process of the embodiment of the present application.

The detailed steps of the production process are as follows:

Step 006: As shown in FIG. 18 , prepare a substrate 121 with third metal grid lines M3.

The first substrate material layer PI1 and the second substrate material layer PI2 are prepared on the carrier layer by a coating process, and the thickness of the first substrate material layer PI1 and the second substrate material layer PI2 are both in the range of 5um to 15um. The insulating layer 1211 is prepared between the first substrate material layer PI1 and the second substrate material layer PI2 by a CVD process. The insulating layer 1211 is formed by stacking a silicon dioxide layer with a thickness of 600nm and an a-Si layer with a thickness of 5nm in sequence.

A metal layer is prepared on the isolation layer 1211 by a PVD process, and is patterned by exposure, development and etching processes to obtain a third metal grid line M3.

An indium tin oxide layer is prepared on the upper side of the second substrate material layer PI2 as a hard mask, and the second substrate material layer PI2 is dry-etched to etch out the second via 71, and then an inorganic layer is prepared on the upper side of the second substrate material layer PI2, so as to prevent undercutting when the first via 70 is etched through the organic side of the second substrate material layer PI2 after the inorganic layer is prepared, resulting in poor metal filling inside the second via 71 of the second substrate material layer PI2. In some other embodiments, an inorganic layer may be prepared on the upper side of the second substrate material layer PI2 first, and then the first via 70 may be etched according to the interconnection requirements (please refer to FIG. 19 in combination) to reduce the climbing of the inorganic layer, thereby reducing the unevenness. In some other embodiments, the inorganic layer prepared on the upper side of the second substrate material layer PI2 may be reused as a hard mask, and the second substrate material layer PI2 may be dry-etched to etch out the second via 71, thereby simplifying the process steps.

Step 007: As shown in FIG. 19 , prepare a partial structure of a TFT and a support structure 30 .

The first buffer layer 401, the a-Si layer and the partial structure of the support structure 30 are continuously prepared on the upper side of the second substrate material layer PI2 by CVD process. The silicon dioxide layer has a thickness of The silicon nitride layer and the thickness are The active layer 402 and the partial structure of the second sub-support structure 32 are obtained by crystallizing a part of a-Si by excimer laser annealing to form p-Si, and patterning the p-Si by exposure, development and etching processes.

The gate insulating layer 403, the first metal grid line M1, the intermetallic dielectric layer 404, the metal capacitor MC, the interlayer dielectric layer 405 and the partial structure of the second sub-support structure 32 are prepared, and the gate G and the first metal grid line M1 are formed simultaneously. Among them, the first metal grid line M1 and the metal capacitor MC are metal layers, which are prepared by PVD process, and are patterned by exposure, development and etching process; the gate insulating layer 403, the intermetallic dielectric layer 404 and the interlayer dielectric layer 405 are inorganic layers, which are prepared by CVD process, and are patterned by exposure, development and etching process.

A plurality of vias of different depths can be etched into the inorganic layer, and vias can also be reserved when thin film patterning is performed on each inorganic layer, so that the via preparation is completed cumulatively.

Step 008: As shown in FIG. 20 , prepare a second metal grid line M2 to achieve electrical connection between multiple pixel units 20 arranged in the same row and complete TFT planarization. Prepare interconnection lines of anode 201, pixel definition layer PDL and cathode 203. Prepare partial structure of support structure 30.

The metal layer is prepared by a PVD process, and patterning is achieved by an exposure, development and etching process to obtain a second metal grid line M2 and a partial structure of the support structure 30. The source S and the drain D are formed simultaneously with the second metal grid line M2 and are electrically connected to the second metal grid line M2. The source S and the drain D are electrically connected to the active layer 402 through a via, and the second metal grid line M2 is electrically connected to the metal capacitor MC through a via.

Prepare the first planarization layer PLN1: prepare an organic layer by a slit coating process, and pattern the organic layer by exposure, development and baking, form vias on the organic layer to obtain the first planarization layer PLN1 and prepare a partial structure of the support structure 30.

The anode 201 and a portion of the support structure 30 are prepared by PVD. The anode 201 is electrically connected to the second metal grid line M2 through the via hole of the first planarization layer PLN1, and is electrically connected to the third metal grid line M3 through the second metal grid line M2. The anode 201 can be made of a thickness of The indium tin oxide layer has a thickness of The nanosilver layer and thickness are The indium tin oxide layers are stacked in sequence.

The pixel definition layer PDL and the support member PDL1 of the support structure 30 are prepared by a half-tone mask process, and vias are prepared in the pixel definition layer PDL and the first planarization layer PLN1. The thickness of the support member PDL1 is greater than that of the pixel definition layer PDL. On the one hand, the support structure 30 is higher than the pixel unit 20 to facilitate bearing pressure. On the other hand, the support member PDL1 can be reused as a supporting photolithography spacer of a fine metal mask plate, simplifying the preparation process of the OLED device layer 202 (please refer to FIG. 21 ).

The fourth metal grid line M4 is prepared on the upper side of the pixel definition layer PDL. The fourth metal grid line M4 is electrically connected to the second metal grid line M2 through a via hole (not shown) penetrating the pixel definition layer PDL and the second planarization layer PLN2, and is electrically connected to the third metal grid line M3 through the second metal grid line M2.

In some other embodiments, the fourth metal grid line M4 may also be prepared on the upper surface of the first planarization layer PLN1, and a pixel definition layer PDL is prepared on the upper side of the fourth metal grid line M4. When the pixel definition layer PDL is patterned, the fourth metal grid line M4 needs to be avoided, that is, the fourth metal grid line M4 is exposed, so that the fourth metal grid line M4 can be electrically connected to the cathode 203 (please refer to FIG. 21).

Step 009: As shown in FIG. 21 , the preparation of the light-emitting layer 123 is completed.

The OLED evaporated layer is prepared by an evaporation process, and the OLED evaporated layer is patterned by a fine metal mask plate, undercutting, and laser etching process to obtain a partial structure of the OLED device layer 202 and the support structure 30. In some other embodiments, the OLED evaporated layer can also be patterned by gravure printing, inkjet printing, laser induced transfer printing, hard mask etching, and other processes.

An inorganic material layer composed of silicon oxide and silicon nitride is prepared by a CVD process, and the inorganic material layer is patterned to obtain a second packaging structure 61 and a partial structure of the support structure 30 .

A deep hole is etched on the above structure. The deep hole is located between the support structure 30 and the pixel unit 20 and the driving unit 40. The deep hole runs through all the stacked layers from the second encapsulation structure 61 to the substrate. The deep hole can be etched through once by a dry etching process for etching the non-metallic layer pattern after preparing the second encapsulation structure 61; or through-hole etching can be performed when each layer of thin film is patterned, and the deep hole preparation is completed cumulatively.

The flat layer PLN is prepared by inkjet printing or slit coating process to achieve planarization.

Step 010: As shown in FIG. 22 , a touch layer 124 is prepared.

Two metal layers are prepared by PVD process, and the two metal layers are separated by an inorganic or organic insulating layer, and the two metal layers are patterned by exposure and development process to obtain the fifth metal grid line M5 and the sixth metal grid line M6. In the embodiment of the present application, the two metal layers are separated by the third planarization layer 1242, and the third planarization layer 1242 is made of organic insulating material. The organic insulating material is easy to bend and can avoid cracks during the bending process. While ensuring the bending performance, it effectively prevents impurities such as water and/or oxygen from penetrating through the cracks, which is good for the touch screen. The pixel unit 20 on the lower side of the control layer 124 is affected, thereby improving the reliability and service life of the display screen 1 including the LED display panel 12.

Step 011: As shown in FIG. 17 , prepare an anti-reflection layer 125 .

The BM and R, G, B color group layers are prepared in sequence through a slit coating process, and patterned through an exposure and development method to form an anti-reflection layer 125. The R, G, B color group layers are obtained by arranging a plurality of RGB color film glasses 1251 in a certain order.

Please refer to Figure 23, which is a schematic diagram of the internal structure of the LED display panel 12 provided in the present application, cut along B-B in some other embodiments.

In this embodiment, as shown in FIG. 23 , most structures of the LED display panel 12 are the same as those of the LED display panel 12 shown in FIG. 17 , except that the processes for preparing the first via 70 connecting the second metal grid line M2 to the third metal grid line M3 are different.

The LED display panel 12 shown in FIG17 is formed by preparing an indium tin oxide layer as a hard mask on the upper side of the second substrate material layer PI2, and dry etching the second substrate material layer PI2 to etch a second via hole 71, and etching the first via hole 70 after the gate insulation layer 403, the intermetallic dielectric layer 404 and the interlayer dielectric layer 405 are prepared.

The LED display panel 12 shown in FIG. 23 first prepares a gate insulating layer 403, an intermetallic dielectric layer 404 and an interlayer dielectric layer 405 on the upper side of the second substrate material layer PI2, and then etches the first via 70 according to the interconnection requirements to reduce the climbing of the inorganic layer, thereby reducing the unevenness.

The above description is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application; in the absence of conflict, the embodiments of the present application and the features in the embodiments can be combined with each other. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

An LED display panel, characterized in that it includes: a substrate, a plurality of pixel units and a plurality of supporting structures, wherein the plurality of supporting structures and the plurality of pixel units are fixed on the same side of the substrate, the plurality of pixel units are arranged at intervals from each other, and the plurality of supporting structures are located in the gaps between the plurality of pixel units. The LED display panel includes a display area and a supporting area, the display area is an area corresponding to the plurality of pixel units, the supporting area is an area corresponding to the plurality of supporting structures, and the elastic modulus of the LED display panel in the supporting area is greater than the elastic modulus of the LED display panel in the display area.
The LED display panel as described in claim 1 is characterized in that the multiple supporting structures all include a first sub-support structure, the pixel unit includes a plurality of first functional layers stacked together, the first sub-support structure includes a plurality of first supporting members stacked together, and the multiple first supporting members are respectively made of the same material as some of the first functional layers in the multiple first functional layers of the pixel unit, so that the multiple first supporting members can be manufactured through the same process as some of the first functional layers in the multiple first functional layers.
The LED display panel as described in claim 2 is characterized in that the LED display panel also includes a flat layer, which is located on the upper side of the plurality of first sub-support structures and the plurality of pixel units, the thickness of the flat layer in the support area is less than the thickness of the flat layer in the display area, and the elastic modulus of the flat layer is less than the elastic modulus of any one of the plurality of first functional layers.
The LED display panel as described in claim 2 is characterized in that a plurality of the first supporting members correspond one-to-one to a plurality of the first functional layers, the first supporting members and the corresponding first functional layers have the same material and thickness, a plurality of the first supporting members are stacked in sequence in the thickness direction, and at least one of the plurality of the first functional layers is located on the same layer as the other first functional layers and is staggered.
The LED display panel as described in claim 2 is characterized in that the bottom of the first sub-support structure and the bottom of the pixel unit are located in the same plane, and the maximum distance between the top of the first sub-support structure and the substrate is greater than the maximum distance between the top of the pixel unit and the substrate.
The LED display panel as described in claim 5 is characterized in that the multiple first functional layers of the pixel unit include a pixel definition layer, and there is a support member among the multiple first support members that is made through the same half-tone mask process as the pixel definition layer, and the thickness of the support member is greater than the maximum thickness of the pixel definition layer.
The LED display panel according to any one of claims 1 to 6 is characterized in that the LED display panel also includes a plurality of first packaging structures, the plurality of first packaging structures correspond one-to-one to the plurality of pixel units, and the first packaging structure is used to encapsulate the corresponding pixel units; the first packaging structure includes a top packaging structure and a bottom packaging layer, the bottom packaging layer is fixed to the bottom of the pixel unit, at least part of the structure of the top packaging structure covers the upper surface of the pixel unit, and the top packaging structure is in sealing contact with the bottom packaging layer.
The LED display panel as described in claim 7 is characterized in that at least one of the multiple supporting structures includes two fourth supporting members, and the two fourth supporting members are respectively made of the same material as the top packaging structure and the bottom packaging layer, so that the two fourth supporting members can be manufactured through the same process as the top packaging structure and the bottom packaging layer.
The LED display panel according to any one of claims 2 to 6, characterized in that the LED display panel further comprises a plurality of driving units, the plurality of driving units are located between the plurality of pixel units and the substrate, the plurality of driving units are connected to the plurality of pixel units, the plurality of driving units are used to respond to driving signals and make the plurality of pixel units emit light according to the driving signals, and the plurality of driving units are staggered with the plurality of supporting structures.
The LED display panel as described in claim 9 is characterized in that at least one of the multiple supporting structures includes a second sub-support structure, the second sub-support structure is located on the lower side of the first sub-support structure, the driving unit includes a plurality of stacked second functional layers, the second sub-support structure includes a plurality of stacked second supporting members, and the plurality of second supporting members are respectively made of the same material as some of the second functional layers of the plurality of second functional layers of the driving unit, so that the plurality of second supporting members can be manufactured through the same process as some of the second functional layers of the plurality of second functional layers.
The LED display panel according to claim 9, characterized in that the LED display panel further comprises a plurality of second packaging structures, the plurality of second packaging structures correspond one-to-one to the plurality of pixel units, and the second packaging structures are used to package the corresponding pixel units;

The driving unit includes a third packaging structure, at least a portion of the second packaging structure covers an upper surface of the pixel unit, and the second packaging structure is in sealing contact with the third packaging structure.
The LED display panel according to claim 9, characterized in that the LED display panel further comprises a touch layer and/or an anti-reflection layer disposed on the upper side of the plurality of pixel units, at least one of the plurality of support structures comprises a third sub-support structure, and the The third sub-support structure is located on the upper side of the first sub-support structure, the touch layer and/or the anti-reflection layer includes a plurality of third functional layers stacked together, the third sub-support structure includes a plurality of third supporting members stacked together, and the plurality of third supporting members are respectively made of the same material as some of the third functional layers among the plurality of third functional layers, so that the plurality of third supporting members can be manufactured through the same process as some of the third functional layers among the plurality of third functional layers.
The LED display panel according to any one of claims 1 to 6, characterized in that the extension directions of the multiple support structures are the same; or the multiple support structures include a first support structure and a second support structure, and there is an angle between the extension direction of the first support structure and the extension direction of the second support structure.
The LED display panel as described in claim 13 is characterized in that the plurality of pixel units are arranged in an array of multiple rows and columns, and the plurality of support structures extend along the direction of the rows or the columns.
The LED display panel as described in claim 14 is characterized in that at least one of the multiple supporting structures is provided between two adjacent rows of pixel units; or at least one of the multiple supporting structures is provided between two adjacent columns of pixel units.
The LED display panel according to any one of claims 1 to 6, characterized in that the substrate is bendable.
A display screen, characterized by comprising the LED display panel according to any one of claims 1 to 16.
An electronic device, characterized in that it comprises one or more display screens as described in claim 17.
The electronic device as described in claim 18 is characterized in that the display screen can be bent along a bending direction, and the supporting structure extends along the bending direction of the display screen.
The electronic device as described in claim 18 or 19 is characterized in that the size of the display screen can be changed.