WO2024061689A1

WO2024061689A1 - Method for producing an electronic component, and electronic component

Info

Publication number: WO2024061689A1
Application number: PCT/EP2023/074970
Authority: WO
Inventors: Thomas Schwarz
Original assignee: Ams-Osram International Gmbh
Priority date: 2022-09-23
Filing date: 2023-09-12
Publication date: 2024-03-28
Also published as: DE102022124574A1

Abstract

A method for producing an electronic component comprises steps for providing an electronic semiconductor chip, wherein a first contact pad and a second contact pad are formed on a contact side of the electronic semiconductor chip, wherein the first contact pad and the second contact pad are elevated by a first height over a portion of the contact side situated between the first contact pad and the second contact pad, for providing a carrier, wherein a first mating contact pad and a second mating contact pad are formed on a top side of the carrier, wherein the first mating contact pad and the second mating contact pad are elevated by a second height over a portion of the top side of the carrier situated between the first mating contact pad and the second mating contact pad, wherein the first height is greater than or equal to zero and the second height is greater or less than or equal to zero, wherein a total height formed as the sum of the first height and the second height is greater than zero, for arranging capsules on the mating contact pads, wherein the capsules each have a solid shell enclosing a supercooled metallic liquid, wherein the capsules each have a diameter that is smaller than the total height, and for pressing the electronic semiconductor chip onto the carrier in such a way that the contact pads of the electronic semiconductor chip are pressed onto the mating contact pads of the carrier, wherein the shells of the capsules arranged between the contact pads and the mating contact pads break open and the metallic liquid wets the contact pads and the mating contact pads.

Description

METHOD FOR PRODUCING AN ELECTRONIC COMPONENT AND ELECTRONIC COMPONENT

DESCRIPTION

The present invention relates to a method for producing an electronic component and to an electronic component.

The present application claims the priority of German patent application 10 2022 124 574. 8, the disclosure content of which is hereby incorporated by reference.

Various methods for electrically contacting electronic semiconductor chips with small lateral dimensions are known in the prior art. Many such methods require prior microstructuring of the contact materials used and are associated with a high risk of short circuits.

One object of the present invention is to provide a method for producing an electronic component. A further object of the present invention is to provide an electronic component. These tasks are solved by a method and a device with the features of the independent patent claims. Various further developments are specified in the dependent claims.

A method for producing an electronic component includes steps for providing an electronic semiconductor chip, wherein a first contact surface and a second contact surface are formed on a contact side of the electronic semiconductor chip, wherein the first contact surface and the second contact surface are a first height above an intermediate the first contact surface and the second contact surface portion of the contact side are raised to provide a carrier, wherein on an upper side of the A first counter-contact surface and a second counter-contact surface are formed on the carrier, the first counter-contact surface and the second counter-contact surface being raised by a second height above a section of the top side of the carrier located between the first counter-contact surface and the second counter-contact surface, the first height is greater than or equal to zero and the second height is greater than, less than or equal to zero, with a total height formed as the sum of the first height and the second height being greater than zero, for arranging capsules on the mating contact surfaces, the capsules each being one have a solid shell that encloses a supercooled metallic liquid, the capsules each having a diameter that is smaller than the overall height, and for pressing the electronic semiconductor chip onto the carrier in such a way that the contact surfaces of the electronic semiconductor chip onto the mating contact surfaces of the carrier are pressed, whereby the shells of the capsules arranged between the contact surfaces and the counter-contact surfaces break open and the metallic liquid wets the contact surfaces and the counter-contact surfaces.

This method does not require any fine structuring of a connecting material to connect the contact surfaces of the electronic semiconductor chip to the mating contact surfaces of the carrier. This means that the method can advantageously be carried out simply and cost-effectively. The method also does not require the use of silver to produce the electrically conductive connection between the electronic semiconductor chip and the carrier, which advantageously reduces the risk of migration of silver and the associated risk of short circuits. The method also does not require any prior application of solder to the contact surfaces of the electronic semiconductor chip, which also contributes to the method being simple and cost-effective to carry out. Furthermore, the process can be carried out at low temperatures, which, among other things, enables the use of inexpensive carrier materials, for example the use of PET. In one embodiment of the method, capsules are also arranged on a section of the top side of the carrier located next to the mating contact surfaces. This makes it possible to apply the capsules using a method with low positioning accuracy, making the method simple and cost-effective to carry out.

In one embodiment of the method, after pressing on the electronic semiconductor chip, a further step is carried out to remove at least some of the capsules arranged next to the mating contact surfaces. This advantageously prevents capsules arranged next to the mating contact surfaces from breaking open at a time after the electronic semiconductor chip has been pressed onto the carrier, for example due to the effects of heat, and causing electrical short circuits.

In one embodiment of the method, the capsules are removed using a solvent, by blowing off, by an etching process or by means of an adhesive film. Advantageously, these variants each enable effective, gentle and cost-effective removal of at least some of the capsules arranged next to the mating contact surfaces.

In one embodiment of the method, the capsules are arranged using a shadow mask. Advantageously, this enables simple and cost-effective application of the capsules, whereby the positions of the capsules can be limited to desired areas of the top of the carrier.

In one embodiment of the method, the capsules are arranged using a spraying process. This advantageously makes it possible to apply the capsules quickly and cost-effectively. In one embodiment of the method, the capsules are arranged together with a solvent on the mating contact surfaces. The solvent evaporates before the electronic semiconductor chip is pressed on. Advantageously, capsules dispersed in a solvent can be applied particularly well by means of a spraying process.

In one embodiment of the method, the capsules are arranged using a printing process. Advantageously, a printing process also enables cost-effective application of the capsules to the top of the carrier.

In one embodiment of the method, the capsules are embedded in a matrix material and arranged on the mating contact surfaces. Advantageously, capsules embedded in a matrix material can be arranged particularly easily on the mating contact surfaces of the carrier. The matrix material can, for example, be an organic material or comprise an acrylic resin, an epoxy or a silicone.

In one embodiment of the method, the matrix material is removed after the electronic semiconductor chip has been pressed on, in particular using a solvent. Advantageously, capsules arranged next to the mating contact surfaces can also be removed when the matrix material is removed.

In one embodiment of the method, the matrix material is hardened after the electronic semiconductor chip has been pressed on. The matrix material can then remain on the electronic component obtainable by the method. The cured matrix material can protect capsules remaining in the matrix material and isolate them from each other, so that capsules remaining in the matrix material cannot cause any undesirable short circuits even after the electronic semiconductor chip has been pressed onto the carrier. In one embodiment of the method, after the electronic semiconductor chip has been pressed on, the matrix material touches the section of the contact side of the electronic semiconductor chip located between the first contact surface and the second contact surface and the section of the top side of the electronic semiconductor chip located between the first mating contact surface and the second mating contact surface carrier. The hardened matrix material can thereby form an underfill of the electronic semiconductor chip and additionally fix it mechanically to the carrier. The underfilling can also protect the electrically conductive connections between the electronic semiconductor chip and the carrier from external influences.

In one embodiment of the method, a distance between the first contact surface and the second contact surface is less than 50 pm, in particular less than 20 pm. Despite this small distance between the contact surfaces of the electronic semiconductor chip, the method advantageously enables reliable electrical contacting without the risk of a short circuit between the first contact surface and the second contact surface.

In one embodiment of the method, the diameter of the capsules is between 0.2 pm and 10 pm, in particular between 0.5 pm and 5 pm. The capsules are therefore advantageously suitable for producing an electrically conductive connection between the contact surfaces of the electronic semiconductor chip and the mating contact surfaces of the carrier, even in the case of a very small electronic semiconductor chip with very small contact surfaces with a very small distance.

In one embodiment of the method, the diameter of the capsules is between 0.5 pm and 3 pm smaller than the overall height. Advantageously, the method thereby enables the production of an electronic component with very compact external dimensions, in particular with a low height. In one embodiment of the method, the shells of the capsules have an oxide, in particular a tin oxide (SnOx). Advantageously, the shells of the capsules therefore have suitable mechanical properties.

In one embodiment of the method, the supercooled metallic liquid has Sn, SnAgCu or SnBi. The supercooled metallic liquid is advantageously suitable for producing an electrically conductive connection between the contact surfaces of the electronic semiconductor chip and the mating contact surfaces of the carrier.

In one embodiment of the method, the electronic semiconductor chip is an optoelectronic semiconductor chip, in particular a light-emitting diode chip. The method is therefore suitable for producing an optoelectronic component, for example a light-emitting diode component. Advantageously, optoelectronic semiconductor chips with a very small size can be used.

An electronic component has an electronic semiconductor chip and a carrier. A first contact surface and a second contact surface are formed on a contact side of the electronic semiconductor chip. The first contact surface and the second contact surface are raised by a first height above a section of the contact side located between the first contact surface and the second contact surface. A first counter-contact surface and a second counter-contact surface are formed on an upper side of the carrier. The first counter-contact surface and the second counter-contact surface are raised by a second height above a section of the top side of the carrier located between the first counter-contact surface and the second counter-contact surface. The first height is greater than or equal to zero. The second height is greater than, less than or equal to zero. A total height formed as the sum of the first height and the second height is greater than zero. The first contact area and the second contact area are connected to the first mating contact surface and the second mating contact surface via solder connections. On the section of the top side of the carrier located between the first counter-contact surface and the second counter-contact surface, capsules are arranged, each of which has a solid shell that encloses a supercooled metallic liquid. The capsules each have a diameter that is smaller than the overall height.

Advantageously, this electronic component can be produced easily and cost-effectively. The solder connections can be made without silver, which advantageously reduces the risk of silver migration and the associated risk of short circuits. The carrier can have a cost-effective carrier material, for example PET.

In one embodiment of the electronic component, the capsules are embedded in a matrix material. The matrix material can protect and insulate the capsules embedded in the matrix material from each other, so that the capsules advantageously cannot cause undesirable short circuits. The matrix material can also form an underfill of the electronic semiconductor chip, additionally fix it mechanically to the carrier and protect the solder connections between the electronic semiconductor chip and the carrier from external influences.

The properties, features and advantages of this invention described above, as well as the manner in which these are achieved, will be more clearly and clearly understood in connection with the following description of the exemplary embodiments, which are explained in more detail in connection with the drawings. Each shows in a schematic representation

Figure 1 is a sectional side view of an electronic semiconductor chip; Figure 2 is a sectional side view of a carrier;

Figure 3 shows a top view of mating contact surfaces on an upper side of the carrier;

Figure 4 shows a total height formed as the sum of a first height and a second height;

Figure 5 shows a shadow mask used to apply capsules;

Figure 6 shows a side view of the carrier with capsules applied to the mating contact surfaces;

Figure 7 shows a top view of the top of the carrier with the capsules applied thereto;

Figure 8 is a sectional view of one of the capsules;

Figure 9 is a sectional side view of the carrier with an electronic semiconductor chip pressed onto it;

Figure 10 shows a sectional detailed view of a contact surface and a mating contact surface during the pressing on of the electronic semiconductor chip;

Figure 11 shows a further detailed view of a contact surface and a mating contact surface during the pressing on of the electronic semiconductor chip;

Figure 12 capsules embedded in a solvent; and

Figure 13 shows the carrier, the electronic semiconductor chip and capsules embedded in a matrix material.

Figure 1 shows a schematic sectional side view of an electronic semiconductor chip 100. The electronic one Semiconductor chip 100 can be, for example, an optoelectronic semiconductor chip, in particular, for example, a light-emitting diode chip (LED chip). The electronic semiconductor chip 100 can also be any other electronic semiconductor chip.

The electronic semiconductor chip 100 has a front side 101 and a contact side 102 opposite the front side 101. If the electronic semiconductor chip 100 is designed as an optoelectronic semiconductor chip, the front side 101 can, for example, form a light-emitting side of the electronic semiconductor chip 100. In the case of a differently designed electronic semiconductor chip 100, the front side 101 may have a different functional property or no functional property at all.

A first contact surface 110 and a second contact surface 120 are formed on the contact side 102 of the electronic semiconductor chip 100. The first contact surface 110 and the second contact surface 120 are intended to electrically contact the electronic semiconductor chip 100, for example in order to apply electrical voltage and electrical current to the electronic semiconductor chip 100. The contact surfaces 110, 120 can be designed, for example, as layer sequences of different metallic materials.

The first contact surface 110 and the second contact surface 120 have a distance 140 from each other measured in the lateral direction. In the case of a small electronic semiconductor chip 100, the distance 140 can also be small. The distance 140 can be, for example, less than 50 pm or even less than 20 pm.

The first contact surface 110 and the second contact surface 120 are each by a first height 130 over a section 103 of the contact side 102 located between the first contact surface 110 and the second contact surface 120 electronic semiconductor chips 100 raised. The first height 130 is dimensioned perpendicular to the contact side 102. The first height 130 can be in the range of a few pm and can be up to 10 pm, for example. However, the first height 130 can also be smaller values up to less than 1 pm. In an extreme case, the first height 130 can even be equal to zero. In this case, the first contact surface 110 and the second contact surface 120 are not raised above the section 103 of the contact side 102 located between the contact surfaces 110, 120, but are flush with the contact side 102 of the electronic semiconductor chip 100.

The electronic semiconductor chip 100 can have further contact surfaces in addition to the first contact surface 110 and the second contact surface 120.

Figure 2 shows a schematic sectional side view of a carrier 200. The carrier 200 can also be referred to as a substrate. The carrier 200 can, for example, have a plastic material, in particular, for example, PET.

The carrier 200 has a top side 201, which is shown in plan view in FIG. At the top 201 of the carrier

200, a first mating contact surface 210 and a second mating contact surface 220 are formed. The first mating contact surface 210 is electrically conductive with one on the top

201 arranged first conductor track 215. The second counter contact surface 220 is electrically conductively connected to a second conductor track 225 formed on the upper side 201. The first counter contact surface 210 and the second counter contact surface 220 can, for example, each be formed as a layer stack of different metallic materials.

The first counter-contact surface 210 and the second counter-contact surface 220 are a second height 230 above one between the first counter-contact surface 210 and the second Counter contact surface 220 located section 203 of the top 201 of the carrier 200 raised. The second height 230 is dimensioned perpendicular to the top 201 of the carrier 200.

The second height 230 can be, for example, a few pm, for example up to 10 pm. However, the second height 230 can also have a smaller value, for example a value of less than 1 pm. The first mating contact surface 210 and the second mating contact surface 220 can even be sunk into the top 201 of the carrier 200 in such a way that the second height 230 is equal to zero or even has a value of less than zero. In the latter case, the section 203 of the top side 201 of the carrier 200 lying between the first mating contact surface 210 and the second mating contact surface 220 projects beyond the first mating contact surface 210 and the second mating contact surface 220.

The first conductor track 215 and the second conductor track 225 can have a height relative to the top side 201 of the carrier 200 that corresponds to the second height 230 of the first mating contact surface 210 and the second mating contact surface 220. However, the conductor tracks 215, 225 can also have a smaller or larger height.

The carrier 200 can have further counter-contact surfaces in addition to the first counter-contact surface 210 and the second counter-contact surface 220.

A total height 300 can be mathematically formed from the first height 130 of the contact surfaces 110, 120 of the electronic semiconductor chip 100 and the second height 230 of the mating contact surfaces 210, 220 of the carrier 200. This is shown graphically in Figure 4. The total height 300 corresponds to the sum of the first height 130 and the second height 230. This applies not only to the case shown in FIG. 4, in which the first height 130 and the second height 230 each have positive values, but also in the case that s first height 130 or the second height 230 has the value zero or the second height 230 has a negative value.

Figure 5 shows a schematic representation of the top 201 of the carrier 200 with a shadow mask 500 arranged above the top 201. The shadow mask 500 has an opening 510 which is arranged above the first mating contact surface 210 and the second mating contact surface 220. In the example shown, the size of the opening 510 is dimensioned such that through the opening 510, in addition to the first mating contact surface 210 and the second mating contact surface 220 and the section 203 of the top 201 of the carrier 200 lying between the mating contact surfaces 210, 220, parts of the Conductor tracks 215, 225 and further sections 204 of the top 201 of the carrier 200 are visible and accessible.

The opening 510 of the shadow mask 500 could also, for example, be dimensioned so small that only the first mating contact surface 210, the second mating contact surface 220 and the section 203 of the top 201 of the carrier 200 lying between the mating contact surfaces 210, 220 are exposed. Alternatively, the opening 510 of the shadow mask 500 could also be larger. The use of a shadow mask 500 with a larger opening 510 offers the advantage that the shadow mask 500 only has to be positioned with little precision in order to arrange the opening 510 over the first mating contact surface 210 and the second mating contact surface 220. The use of the shadow mask 500 can also be completely dispensed with, as will be explained below.

Figure 6 shows a schematic sectional side view of the carrier 200 in a processing state that follows the previous illustrations. Figure 7 shows a top view of the top 201 of the carrier 200 in the processing status shown in Figure 6.

Capsules 400 have been arranged on the mating contact surfaces 210, 220 on the top 201 of the carrier 200. The arranging The capsules 400 are made using the shadow mask 500 shown in FIG. 5. Capsules 400 have been arranged in the entire area exposed through the opening 510 of the shadow mask 500. As a result, capsules 400 have been arranged not only on the first mating contact surface 210 and the second mating contact surface 220, but also on the section 203 of the top 201 of the carrier 200 lying between the mating contact surfaces 210, 220, on parts of the conductor tracks 215, 225 and on further sections 204 of the top 201 of the carrier 200. By using a shadow mask 500 with a smaller opening 510, the capsules 400 could also be limited to the first mating contact surface 210, the second mating contact surface 220 and the section 203 of the top 201 of the carrier 200 lying between the mating contact surfaces 210, 220. If a shadow mask 500 were completely dispensed with, the capsules 400 would be arranged on the entire upper side 201 of the carrier 200. All that is absolutely necessary is that capsules 400 be arranged on the mating contact surfaces 210, 220.

The capsules 400 are all designed essentially the same. Figure 8 shows a schematic sectional view of one of the capsules 400. Each capsule 400 has a solid shell 410 enclosing a supercooled metallic liquid 420 . The solid shell 410 can, for example, have an oxide, for example a tin oxide (SnOx, SnO, Sn2O3, SnO2). The supercooled metallic liquid 420 can comprise, for example, tin or a tin compound, in particular, for example, Sn, SnAgCu or SnBi.

The capsules 400 each have a diameter of 430. The diameter 430 is less than the total height 300, i.e. less than the sum of the first height 130 and the second height 230. It is expedient that the diameter 430 of the capsules 400 is between 0.5 pm and 3 pm smaller than the total height 300. The diameter 430 of the capsules 400 can be, for example, between 0.2 pm and 10 pm, in particular, for example, between 0.5 pm and 5 pm. Figure 9 shows a schematic sectional side view of the electronic semiconductor chip 100 and the carrier 200 in a processing state that follows the previous illustrations.

9, the electronic semiconductor chip 100 has been pressed onto the carrier 200 in such a way that the first contact surface 110 of the electronic semiconductor chip 100 is on the first mating contact surface 210 of the carrier 200 and the second contact surface 120 of the electronic Semiconductor chips 100 have been pressed onto the second mating contact surface 220 of the carrier 200. This processing step is shown schematically in FIG. 10, where an enlarged sectional side view of a part of the second contact surface 120 of the electronic semiconductor chip 100 and a part of the second mating contact surface 220 of the carrier 200 is shown. By pressing the electronic semiconductor chip 100 onto the carrier 200, the capsules 400 previously arranged on the mating contact surfaces 210, 220 are squeezed and deformed between the mating contact surfaces 210, 220 and the contact surfaces 110, 120 until the shells 410 of the contact surfaces 110 between the contact surfaces , 120 and the mating contact surfaces 210 , 220 finally break open capsules 400 . Then the supercooled metallic liquid 420 contained in the capsules 400 runs out and wets the contact surfaces 110, 120 of the electronic semiconductor chip 100 and the mating contact surfaces 210, 220 of the carrier 200. For this purpose, the electronic semiconductor chip 100 can be pressed onto the carrier 200, for example, with a pressure between 0.1 MPa and 10 MPa.

The supercooled metallic liquid 420 emerging from the broken capsules 400 solidifies quickly after wetting the contact surfaces 110, 120 and mating contact surfaces 210, 220 and forms solder connections 450 between the first contact surface 110 and the first mating contact surface 210 as well the second contact surface 120 and the second mating contact surface 220. This is shown in Figure 9 and in the enlarged detailed view of Figure 11.

The number of capsules 400 applied per surface to the top side 201 of the carrier 200 during the arrangement of the capsules 400 on the mating contact surfaces 210, 220 of the carrier 200 can be chosen so high that the resulting solder connections 450 have good electrical and thermal conductivity. At the same time, the number of capsules 400 per area should be chosen to be sufficiently low so that the solder connections 450 transmit thermomechanical stress to the lowest possible extent and there is only a small risk of an electrical short circuit forming when the electronic semiconductor chip 100 is pressed onto the carrier 200.

As can be seen in Figures 9 and 11, the capsules 400 arranged on the section 203 of the top side 201 of the carrier 200 located between the first mating contact surface 210 and the second mating contact surface 220 are not opened during the pressing of the electronic semiconductor chip 100 onto the carrier 200 fnet. This is ensured in particular by the fact that the diameter 430 of the capsules 400 is smaller than the overall height 300. This prevents unwanted short circuits between the first mating contact surface 210 and the second mating contact surface 220 of the carrier 200 or arise between the first contact surface 110 and the second contact surface 120 of the electronic semiconductor chip 100. The capsules 400 arranged on the conductor tracks 215, 225 and on other sections 204 of the top 201 of the carrier 200 also remain intact.

In the processing status shown in Figure 9, the carrier 200 with the electronic semiconductor chip 100 arranged thereon can form an electronic component 10, the processing of which is completed. If the electronic semiconductor chip 100 is an optoelectronic semiconductor chip, that is Electronic component 10 is an optoelectronic component. However, starting from the processing status shown in FIG. 9, further processing steps can also be carried out.

The processing status shown in FIG. 9 can optionally be followed by a process step for removing at least some of the capsules 400 arranged next to the mating contact surfaces 210, 220. In this case, some or all of the capsules 400 arranged on the top side 201 of the carrier 200, which were not broken open during the pressing on of the electronic semiconductor chip 100, are removed. Removing these capsules 400 prevents these capsules 400 from rupturing at a later time, which could result in the supercooled metallic liquid 420 contained in the capsules 400 causing a short circuit. A later rupture of the capsules 400 could be caused, for example, by mechanical stress or by the effects of heat.

The removal of at least some of the capsules 400 arranged next to the mating contact surfaces 210, 220 can be done, for example, using a solvent, by blowing off, by an etching process or by means of an adhesive film. It is advantageous if, when removing the capsules 400, as large a portion of the capsules 400 as possible are removed, which are located on the section 203 of the top 201 of the carrier 200 arranged between the mating contact surfaces 210, 220, since the capsules 400 arranged there are particularly could easily cause a short circuit.

Arranging the capsules 400 on the mating contact surfaces 210, 220 of the carrier 200, as described with reference to FIGS. 6 and 7, can be done, for example, by a spraying process. The shadow mask 500 described with reference to FIG. 5 can optionally be used here. For spraying onto the top 201 of the carrier 200, the capsules 400 can be dispersed in a solvent 600, which is used together with the 400 capsules are sprayed on. This is shown schematically in FIG. 12, where a part of the first mating contact surface 210 of the carrier 200 is shown with some capsules 400 arranged thereon. The solvent 600 can evaporate after spraying on the capsules 400 before the electronic semiconductor chip 100 is pressed onto the carrier 200.

Alternatively, the capsules 400 can be arranged using a printing process, as described with reference to FIGS. 6 and 7. Here, for example, the shadow mask 500 described with reference to FIG. 5 can be used. The shadow mask in this case is a printing screen or stencil.

In order to arrange the capsules 400 by means of a printing process, the capsules 400 can be embedded in a matrix material 700. This is shown in Figure 13, where the carrier 200 and the electronic semiconductor chip 100 are shown schematically after the electronic semiconductor chip 100 has been pressed on.

In a variant of the method, the matrix material 700 applied together with the capsules 400 by a printing process can be removed after the electronic semiconductor chip 100 has been pressed on, for example using a solvent. In this case, the matrix material 700 can comprise, for example, an organic material, for example a palmitic acid or 1-decanol. During the removal of the matrix material 700, capsules 400 embedded in the matrix material 700 that were not broken during the pressing on of the electronic semiconductor chip 100 can also be removed.

An alternative possibility is to harden the matrix material 700 after pressing on or during pressing on the electronic semiconductor chip 100. In this case, the matrix material 700 may include, for example, an acrylic resin, an epoxy, or a silicone. The hardening of the matrix material 700 can be achieved, for example, by applying heat or by irradiation with light. The hardened matrix material 700 then remains on the electronic component 10, as shown in FIG. 13.

The hardened matrix material 700 can fix the capsules 400 embedded in the matrix material 700, which have not broken open during the pressing on of the electronic semiconductor chip 100, in such a way that these capsules 400 can later break open or at least a short circuit can occur due to the metallic material emerging from the capsules 400 Liquid 420 is prevented.

The cured matrix material 700 can also fulfill the function of an underfill. In this case, it is expedient if the matrix material 700, after pressing on the electronic semiconductor chip 100, covers the section 103 of the contact side 102 of the electronic semiconductor chip 100 located between the first contact surface 110 and the second contact surface 120 and that between the first mating contact surface 210 and the Second counter contact surface 220 touches section 203 of the top 201 of the carrier 200. In this case, the matrix material 700 fills as completely as possible the space between the contact surfaces 110, 120, the contact side 102 of the electronic semiconductor chip 100, the mating contact surfaces 210, 220 and the top 201 of the carrier 200. The matrix material 700 then effects an additional mechanical fixation of the electronic semiconductor chip 100 on the carrier 200, can prevent ion migration and protect the electrical connections between the contact surfaces 110, 120 and the mating contact surfaces 210, 220 from external influences caused by moisture, acids and corrosive gases .

The invention was illustrated and described in more detail using the preferred exemplary embodiments. However, the invention is not limited to the disclosed examples. Other variations may be derived by those skilled in the art. REFERENCE NUMBERS CHEN LIST

10 electronic component

100 electronic semiconductor chip

101 front

102 contact page

103 intermediate section

110 first contact area

120 second contact area

130 first height

140 distance

200 porters

201 top

203 intermediate section

204 further section

210 first mating contact area

215 first conductor track

220 second mating contact area

225 second conductor track

230 second height

300 total height

400 capsule

410 bowl

420 liquid

430 diameter

450 solder connection

500 Shadow Mask

510 opening

600 solvents

700 matrix material

Claims

PATENT CLAIMS Method for producing an electronic component (10) with the following steps:

- Providing an electronic semiconductor chip (100), wherein a first contact surface (110) and a second contact surface (120) are formed on a contact side (102) of the electronic semiconductor chip (100), the first contact surface (110) and the second contact surface (120) is raised by a first height (130) above a section (103) of the contact side (102) located between the first contact surface (110) and the second contact surface (120);

- Providing a carrier (200), wherein a first counter-contact surface (210) and a second counter-contact surface (220) are formed on a top side (201) of the carrier (200), the first counter-contact surface (210) and the second counter-contact surface (220) are raised by a second height (230) above a section (203) of the top (201) of the carrier (200) located between the first mating contact surface (210) and the second mating contact surface (220), the first height (130) is greater than or equal to zero and the second height (230) is greater than, less than or equal to zero, wherein a total height (300) formed as the sum of the first height (130) and the second height (230) is greater than zero;

- Arranging capsules (400) on the mating contact surfaces (210, 220), the capsules (400) each having a solid shell (410) which encloses a supercooled metallic liquid (420), the capsules (400) each having a diameter (430) which is less than the total height (300);

- Pressing on the electronic semiconductor chip (100). the carrier (200) in such a way that the contact surfaces (110, 120) of the electronic semiconductor chip (100) are pressed onto the mating contact surfaces (210, 220) of the carrier (200), the shells (410) between the contact surfaces ( 110, 120) and the mating contact surfaces (210, 220) break open capsules (400) and the metallic liquid (420) wets the contact surfaces (110, 120) and the mating contact surfaces (210, 220). Method according to claim 1, wherein capsules (400) are also arranged on a section (204) of the top side (201) of the carrier (200) located next to the mating contact surfaces (210, 220). Method according to claim 2, wherein after pressing on the electronic semiconductor chip (100), the following further step is carried out:

- Removing at least some of the capsules (400) arranged next to the mating contact surfaces (210, 220). The method according to claim 3, wherein the removal is carried out using a solvent, by blowing, by an etching method or by means of an adhesive film. Method according to one of the preceding claims, wherein the arrangement of the capsules (400) is carried out using a shadow mask (500). Method according to one of the preceding claims, wherein the placement of the capsules (400) is carried out by a spraying process. A method according to any one of the preceding claims, wherein the capsules (400) together with a solvent

(600) arranged on the mating contact surfaces (210, 220). are, the solvent (600) evaporating before the electronic semiconductor chip (100) is pressed on. Method according to one of claims 1 to 5, wherein the arrangement of the capsules (400) is carried out by a printing process. Method according to one of the preceding claims, wherein the capsules (400) are embedded in a matrix material

(700) can be arranged on the mating contact surfaces (210, 220). Method according to claim 9, wherein the matrix material (700) is removed after pressing on the electronic semiconductor chip (100), in particular by means of a solvent. Method according to claim 9, wherein the matrix material (700) is hardened after pressing on the electronic semiconductor chip (100). Method according to claim 11, wherein the matrix material (700) after pressing on the electronic semiconductor chip (100) covers the section (103) of the contact side (102) of the electronic semiconductor chip located between the first contact surface (110) and the second contact surface (120). (100) and the section (203) of the top (201) of the carrier (200) located between the first mating contact surface (210) and the second mating contact surface (220). Method according to one of the preceding claims, wherein a distance (140) between the first contact surface

(110) and the second contact surface (120) is less than 50 pm, in particular less than 20 pm. Method according to one of the preceding claims, wherein the diameter (430) of the capsules (400) is between 0.2 pm and 10 pm, in particular between 0.5 pm and 5 pm. Method according to one of the preceding claims, wherein the diameter (430) of the capsules (400) is between 0.5 pm and 3 pm less than the overall height (300). Method according to one of the preceding claims, wherein the shells (410) of the capsules (400) have an oxide, in particular a tin oxide. A method according to any one of the preceding claims, wherein the supercooled metallic liquid (420) comprises Sn, SnAgCu or SnBi. Method according to one of the preceding claims, wherein the electronic semiconductor chip (100) is an optoelectronic semiconductor chip, in particular a light-emitting diode chip. Electronic component (10) with an electronic semiconductor chip (100) and a carrier (200), a first contact surface (110) and a second contact surface (120) being formed on a contact side (102) of the electronic semiconductor chip (100), wherein the first contact surface (110) and the second contact surface (120) are raised by a first height (130) above a section (103) of the contact side (102) located between the first contact surface (110) and the second contact surface (120). are, wherein a first counter-contact surface (210) and a second counter-contact surface (220) are formed on a top side (201) of the carrier (200), the first counter-contact surface (210) and the second counter-contact surface (220) being formed by a second one Height (230) above a section (203) of the top side (201) of the carrier (200) located between the first mating contact surface (210) and the second mating contact surface (220) is raised, the first height (130) being greater than or equal to zero and the second Height (230) is greater than, less than or equal to zero, with a total height (300) formed as the sum of the first height (130) and the second height (230) being greater than zero, with the first contact surface (110) and the second Contact surface (120) is connected to the first mating contact surface (210) and the second mating contact surface (220) via solder connections (450), with the first mating contact surface between

(210) and the second mating contact surface (220) located section (203) of the top (201) of the carrier (200) capsules (400) are arranged, each of which has a solid shell (410) which contains a supercooled metallic liquid (420 ), the capsules (400) each having a diameter (430) that is smaller than the overall height (300). Electronic component (10) according to claim 19, wherein the capsules (400) are embedded in a matrix material (700).