WO2024060905A1

WO2024060905A1 - Transceiver radio-frequency switch and switch circuit and control method therefor, and storage medium

Info

Publication number: WO2024060905A1
Application number: PCT/CN2023/114142
Authority: WO
Inventors: 郭宽田; 陈志林
Original assignee: 深圳市中兴微电子技术有限公司
Priority date: 2022-09-20
Filing date: 2023-08-22
Publication date: 2024-03-28
Also published as: CN117792420A

Abstract

The present disclosure relates to the technical field of transceivers. Disclosed are a transceiver radio-frequency switch and a switch circuit and control method therefor, and a storage medium. The switch circuit comprises a signal input end, a signal output end, an antenna end, a plurality of first LC resonant cavities and a plurality of second LC resonant cavities, wherein the signal input end and the signal output end are respectively electrically connected to the antenna end; the first LC resonant cavities are cascaded between the signal input end and the antenna end, the second LC resonant cavities are cascaded between the signal output end and the antenna end, and the plurality of first LC resonant cavities and the plurality of second LC resonant cavities are symmetrically arranged relative to the antenna end; the plurality of first LC resonant cavities are each connected to an output end of a first control voltage, and the plurality of second LC resonant cavities are each connected to an output end of a second control voltage; and the plurality of first LC resonant cavities and the plurality of second LC resonant cavities are each used for realizing bandwidth extension in different frequency bands.

Description

Transceiver radio frequency switch and switching circuit, control method and storage medium thereof

Relevant public cross-references

This disclosure requires the priority of the Chinese patent application submitted to the State Intellectual Property Office on September 20, 2022, with the publication number CN202211144951.7 and the invention name "Transceiver radio frequency switch and its switching circuit, control method and storage medium", The entire contents of this application are incorporated by reference into this disclosure.

Technical field

The embodiments of the present disclosure relate to, but are not limited to, the technical field of transceivers, and in particular to a switching circuit of a transceiver radio frequency switch, a control method of a transceiver radio frequency switch, a transceiver radio frequency switch, and a computer storage medium.

Background technique

With the continuous development of mobile communications, fifth-generation mobile communications have put forward higher requirements for transmission rate, delay, reliability, etc. In addition to using higher-order modulation methods, carrier aggregation to increase channel bandwidth is currently the main technology used in various wireless communications to meet high transmission rates and low delays. The carrier aggregation technology requires the transceiver to have the characteristics of multi-band operation, which puts forward very high requirements for the radio frequency switch in the transceiver.

Traditional MOS (metal-oxide semiconductor field effect transistor) switches achieve high-resistance isolation in the required frequency band by utilizing the impedance reversal characteristics of the quarter-wavelength transmission line to ensure the high-frequency performance of the switch. However, , this method still cannot achieve broadband applications because it is limited by the narrow-band frequency characteristics of the transmission line.

In summary, traditional MOS switches cannot achieve broadband expansion to cover multiple frequency bands.

Contents of the invention

The main purpose of the present disclosure is to provide a switching circuit for a transceiver radio frequency switch, a control method for a transceiver radio frequency switch, a transceiver radio frequency switch and a computer storage medium, aiming to expand the bandwidth of the radio frequency switch. to improve the overall performance of the transceiver system.

In order to achieve the above object, the present disclosure provides a switching circuit for a radio frequency switch of a transceiver. The switching circuit includes: a signal input terminal, a signal output terminal, an antenna terminal, a plurality of first LC resonant cavities and a plurality of second LC resonant cavities. , wherein the signal input terminal and the signal output terminal are electrically connected to the antenna terminal respectively; a plurality of the first LC resonant cavities are cascaded between the signal input terminal and the antenna terminal, and a plurality of first LC resonant cavities are cascaded between the signal input terminal and the antenna terminal. The second LC resonant cavity is cascaded between the signal output end and the antenna end; a plurality of the first LC resonant cavities are each connected to the output end of the first control voltage, and a plurality of the second LC resonant cavities The cavities are each connected to an output terminal of the second control voltage.

In addition, to achieve the above object, the present disclosure also provides a control method for a radio frequency switch of a transceiver. The control method is applied to the switching circuit of the radio frequency switch of the transceiver as described above. The control method includes: in the first When the output terminal of the control voltage outputs a high voltage signal and the output terminal of the second control voltage outputs a low voltage signal, the first radio frequency signal emitted by the transceiver is transmitted from the signal output terminal through the plurality of first LC resonant cavities. transmitted to the antenna terminal; when the output terminal of the first control voltage outputs a low voltage signal and the output terminal of the second control voltage outputs a high voltage signal, the plurality of second LC resonant cavities are used to The second radio frequency signal received by the antenna terminal is transmitted from the antenna terminal to the signal input terminal.

In addition, to achieve the above object, the present disclosure also provides a transceiver radio frequency switch, which includes: the switching circuit of the transceiver radio frequency switch as described above, a memory, a processor and a device stored in the memory. A control program for the radio frequency switch of the transceiver can be run on the processor. When the control program for the radio frequency switch of the transceiver is executed by the processor, the steps of the method for controlling the radio frequency switch of the transceiver are implemented as described above.

In addition, in order to achieve the above object, the present disclosure also provides a computer storage medium. The computer storage medium stores a control program for the radio frequency switch of the transceiver. When the control program for the radio frequency switch of the transceiver is executed by the processor, the above-mentioned control program is implemented. The steps of the control method of the radio frequency switch of the transceiver.

In addition, to achieve the above object, the present disclosure also provides a computer program product, which includes a computer program that, when executed by a processor, implements the steps of the method for controlling a radio frequency switch of a transceiver as described above.

Description of the drawings

Figure 1 is a schematic diagram of the equipment structure of the terminal equipment hardware operating environment according to the embodiment of the present disclosure;

Figure 2 is a schematic diagram of a switching circuit of a traditional MOS switch used in an embodiment of the present disclosure;

Figure 3 is a schematic diagram of a switching circuit using a switch with inverted transmission line impedance according to an embodiment of the present disclosure;

Figure 4 is a schematic diagram of the switching circuit of an asymmetric LC switch according to an embodiment of the present disclosure;

Figure 5 is a schematic diagram of a switching circuit of a transceiver radio frequency switch provided according to an embodiment of the present disclosure;

Figure 6 is a schematic flowchart of a method for controlling a radio frequency switch of a transceiver according to an embodiment of the present disclosure;

Figure 7 is a schematic diagram of a switch circuit according to a method for controlling a radio frequency switch of a transceiver provided by an embodiment of the present disclosure;

Figure 8 shows the isolation and port standing wave of the transceiver in TX mode according to a specific embodiment of the present disclosure;

Figure 9 shows the insertion loss of a transceiver in TX mode according to a specific embodiment of the present disclosure;

Figure 10 shows the 1dB compression point of a transceiver in TX mode at 27GHz according to a specific embodiment of the present disclosure;

Figure 11 shows the isolation and port standing wave of a transceiver in RX mode according to a specific embodiment of the present disclosure;

Figure 12 shows the insertion loss of a transceiver in RX mode according to a specific embodiment of the present disclosure;

Figure 13 shows the frequency response of the insertion loss of the radio frequency switch of the transceiver with different numbers of resonant cavities according to the embodiment of the present disclosure.

The realization of the purpose, functional features and advantages of the present disclosure will be further described with reference to the embodiments and the accompanying drawings.

Detailed ways

It should be understood that the specific embodiments described here are only used to explain the present disclosure and are not used to limit the present disclosure.

Referring to Figure 1, Figure 1 is a schematic diagram of the equipment structure of the transceiver radio frequency switch hardware operating environment provided by the embodiment of the present disclosure. The radio frequency switch of the transceiver in the embodiment of the present disclosure may specifically be a switch of a TDD (Time Division Duplexing) radio frequency millimeter wave communication system and a radar system. Moreover, the radio frequency switch of the transceiver in the embodiment of the present disclosure is not limited to the radio frequency millimeter wave band, but can also be used in the terahertz frequency band.

The switching circuit of the radio frequency switch of the transceiver in the embodiment of the present disclosure includes: a signal input terminal, a signal output terminal, an antenna terminal, a plurality of first LC resonant cavities and a plurality of second LC resonant cavities; wherein, the signal input terminal and the signal output terminal are respectively Electrically connected to the antenna end; multiple first LC resonant cavities are cascaded between the signal input end and the antenna end, multiple second LC resonant cavities are cascaded between the signal output end and the antenna end, and multiple first LC resonant cavities The cavity and the plurality of second LC resonant cavities are arranged symmetrically with respect to the antenna end; each of the plurality of first LC resonant cavities is also connected to the output end of the first control voltage, and each of the plurality of second LC resonant cavities is also connected to the output end of the second control voltage. Output Connected, a plurality of first LC resonant cavities and a plurality of second LC resonant cavities are each used to achieve bandwidth expansion in different frequency bands.

As shown in Figure 1, the transceiver radio frequency switch may include: a processor 1001, such as a CPU, a communication bus 1002, a user interface 1003, a network interface 1004, and a memory 1005. Among them, the communication bus 1002 is used to realize connection communication between these components. The user interface 1003 may include a display screen (Display) and an input unit such as a keyboard (Keyboard). The optional user interface 1003 may also include a standard wired interface and a wireless interface. The network interface 1004 may optionally include a standard wired interface or a wireless interface (such as a Wi-Fi interface). The memory 1005 can be a high-speed RAM memory or a stable memory (non-volatile memory), such as a disk memory. The memory 1005 may optionally be a storage device independent of the aforementioned processor 1001.

Those skilled in the art can understand that the structure shown in Figure 1 does not constitute a limitation on the transceiver radio frequency switch. The transceiver radio frequency switch provided by the present disclosure may include more or fewer components than shown in the figure, or some combinations of certain components. components, or different arrangements of components.

As shown in FIG. 1 , a memory 1005 as a computer storage medium may include an operating system, a network communication module, a user interface module, and a control program for a radio frequency switch of a transceiver.

In the terminal shown in Figure 1, the network interface 1004 is mainly used to connect to the backend server and communicate with the backend server; the user interface 1003 is mainly used to connect to the client and communicate with the client; and the processor 1001 can be used to Call the control program of the transceiver radio frequency switch stored in the memory 1005, and perform the following steps:

When the output terminal of the first control voltage outputs a high voltage signal and the output terminal of the second control voltage outputs a low voltage signal, the first radio frequency signal emitted by the transceiver is passed through the plurality of first LC resonant cavities. The signal output terminal is transmitted to the antenna terminal;

When the output terminal of the first control voltage outputs a low voltage signal and the output terminal of the second control voltage outputs a high voltage signal, the second second LC resonant cavity received by the antenna terminal is Radio frequency signals are transmitted from the antenna terminal to the signal input terminal.

It should be noted that in the embodiment of the present disclosure, the transceiver radio frequency switch is a necessary module for the TDD transceiver to realize TX and RX antenna multiplexing, which is crucial to reducing the number of antennas in the wireless communication system, especially when Massive MIMO technology is used - Multi-antenna systems for massive antenna technology. In addition, with the continuous development of mobile communications, fifth-generation mobile communications have put forward higher requirements for transmission rate, delay, reliability, etc. In addition to using higher-order modulation methods, carrier aggregation to increase channel bandwidth is currently All kinds of nothing Line communication is the main technology used to meet high transmission rates and low latency. This technology requires the transceiver to have the characteristics of multi-band operation, which places very high requirements on the radio frequency switch in the transceiver. Based on this, designing an RF switch with scalable bandwidth has broad application prospects and practical value.

The circuit diagram of a traditional MOS (metal-oxide semiconductor field effect transistor (metal-oxide semiconductor FET, referred to as MOS-FET)) switch is shown in Figure 2. It mainly includes two pairs of switches M1, M3 and M2 controlled by complementary signals. M4. M1 and M3 control the conduction of TX and RX, and M2 and M4 improve the isolation of TX and RX modes. This structure mainly has the following defects: 1. Large-sized transistors cause larger parasitic capacitance. At high frequencies, signals leak through the off-state capacitance of the transistors, resulting in poor high-frequency performance; 2. M2 and M4 provide additional ground connections. Parasitic capacitance causes signals to leak to the ground, resulting in large insertion loss; third, traditional switches cannot achieve broadband expansion and cover multiple frequency bands.

At present, there are some solutions to the problem of poor high-frequency performance in question 1. For example, as shown in Figure 3, high-impedance isolation can be achieved in the desired frequency band by utilizing the impedance reversal characteristics of a quarter-wavelength transmission line. However, this method is limited by the narrow-band frequency characteristics of the transmission line and occupies a large chip area.

Alternatively, as shown in Figure 4, there are also switches that utilize a single LC resonant network to achieve high-impedance isolation at specific frequencies, but due to the narrow-band characteristics of the LC resonant, broadband applications cannot be achieved.

That is, there are signal leakage and bandwidth problems with the transceiver RF switch, which need to be further solved.

To address the above problems, the present disclosure provides a switching circuit for a radio frequency switch of a transceiver. As shown in Figure 5, the switching circuit of a radio frequency switch of a transceiver of the present disclosure includes three ports: a signal input terminal TX, an antenna port ANT, and a signal output terminal RX. In addition, the switching circuit also includes: a plurality of first LC resonant cavities TXLC _k and a plurality of second LC resonant cavities RXLC _k. A plurality of first LC resonant cavities TXLC _k and a plurality of second LC resonant cavities RXLC _k are included in the switching circuit. The center is set symmetrically relative to the antenna end. Among them, the signal input terminal TX to the antenna terminal ANT is composed of a plurality of first LC resonant cavities TXLC _k in cascade, and the signal output terminal RX to the antenna terminal ANT is also composed of a plurality of second LC resonant cavities RXLC _k in cascade. . In addition, the plurality of first LC resonant cavities TXLC _k are each connected to the output end of the first control voltage V _C , and the plurality of second LC resonant cavities RXLC _k are each connected to the second control voltage connected to the output terminal. Each of the plurality of first LC resonant cavities TXLC _k and the plurality of second LC resonant cavities RXLC _k is used to achieve bandwidth expansion in different frequency bands.

For example, as shown in Figure 5, the connection between TX and the antenna ANT is composed of n first LC resonant cavities TXLC _k cascaded. One end of the first first resonant cavity TXLC ₁ is connected to the signal input terminal TX, the other end is connected to the input of the second resonant cavity TXLC ₂ , one end of the second first resonant cavity TXLC ₂ is connected to the output of the first resonant cavity TXLC ₁ , The other end is connected to the input of the third first resonant cavity TXLC ₃ , and so on, the nth One end of the first resonant cavity TXLC _n is connected to the output of the n-1th first resonant cavity TXLC _n-1 , and the other end is connected to the input of the n+1th first resonant cavity TXLC _n+1 . Where n is a positive integer greater than or equal to 1, and the 0th resonant cavity represents TX.

Similarly, the connection between RX and the antenna ANT is also composed of m second LC resonant cavities RXLC _k in cascade, and the m second LC resonant cavities RXLC _k are connected with the n first LC resonant cavities between TX and the antenna port. TXLC _k has a symmetrical structure relative to the antenna port in the entire switch circuit. That is, similar to the TX to antenna port, one end of the first second resonant cavity RXLC ₁ is connected to the signal input terminal RX, the other end is connected to the input of the second second resonant cavity RXLC ₂ , and one end of the second second resonant cavity RXLC ₂ Connect the output of the first second resonant cavity RXLC ₁ , the other end is connected to the input of the third second resonant cavity RXLC ₃ , and so on, one end of the m-th second resonant cavity RXLC _m is connected to the m-1 second The output of the resonant cavity RXLC _m-1 is connected to the input of the m+1 second resonant cavity RXLC _m+1 at the other end. The 0th resonant cavity represents RX.

It should be noted that in the embodiment of the present disclosure, in the switching circuit of the radio frequency switch of the transceiver provided by the present disclosure, the number n of the first LC resonant cavity TXLC _k and the number m of the second LC resonant cavity RXLC _k may be the same or Are not the same.

In addition, the transistors used in the switching circuit of the radio frequency switch of the transceiver provided according to the embodiments of the present disclosure can be implemented not only with field effect transistors, but also with bipolar transistors. When implementing it with a bipolar transistor, you only need to replace the NMOS transistor with an NPN transistor.

In this embodiment, multiple resonance networks can be used at the signal input terminal TX and the signal output terminal RX, so that each resonance network resonates in different frequency bands to achieve bandwidth expansion, and corresponding resonances can be added based on actual application needs. The number of cavities is increased to achieve wider bandwidth expansion, that is, the present disclosure implements bandwidth expansion of the radio frequency switch of the transceiver, thereby effectively improving the overall performance of the transceiver system.

In addition, compared with the above-mentioned traditional MOS switches, switches using transmission line impedance inversion, and asymmetric LC switches, the switching circuit of the transceiver radio frequency switch proposed in the embodiment of the present disclosure also eliminates the switch connected in parallel to the ground, thereby reducing the number of switches. Signal leakage to ground. In addition, the use of AC suspension technology can also reduce the leakage of signals from the transistor substrate to the ground and reduce the insertion loss in the switching band. Moreover, by using a symmetrical structure in the switching circuit to set up each LC resonant cavity, the reliability of the circuit can also be improved.

In some embodiments, in the switching circuit of the on/off radio frequency switch provided according to the embodiment of the present disclosure, each of the plurality of first LC resonant cavities TXLC _k includes a first transistor _MTn , a first inductor _LTn and a first resistor R _Tdsn ;

Among them, the source stage of the first transistor _MTn , the first terminal of the first inductor _LTn and the first resistor R _Tdsn The first end is connected as the input of the first LC resonant cavity TXLC _k ; and the drain of the first transistor M _Tn , the second end of the first inductor L _Tn and the second end of the first resistor R _Tdsn are connected as the first The output of the LC resonant cavity TXLC _k .

Exemplarily, as shown in Figure 5, the input of the n-th first resonant cavity TXLC _n is connected to the source stage of the first transistor _MTn , one end of the first inductor _LTn and one end of the first resistor R _Tdsn , and the The output of the n-th first resonant cavity TXLC _n is connected to the drain stage of the first transistor _MTn , the other end of the first inductor _LTn and the other end of the first resistor _RTdsn .

In some embodiments, in the switching circuit of the on/off radio frequency switch provided according to the embodiment of the present disclosure, the first transistors M _Tn each included in the plurality of first LC resonant cavities TXLC _k are a plurality of series-connected first sub-transistors M .

Exemplarily, as shown in FIG. 5 , the first transistor _MTn in each first resonant cavity TXLC _k is composed of k stacks of identically connected sub-transistors M. In the stacked k sub-transistors M, the source level of the k-th sub-transistor M is connected to the drain level of the k-1th sub-transistor M, and the drain level of the k-th sub-transistor M is connected to the source level of the k+1-th sub-transistor M, so that By analogy, a plurality of sub-transistors M are connected in series as the first transistor _MTn in the first resonant cavity TXLC _k .

In some embodiments, the plurality of series-connected first sub-transistors M may be field effect transistors - NMOS transistors or bipolar transistors - NPN transistors.

In some embodiments, in the switching circuit of the on/off radio frequency switch provided according to the embodiment of the present disclosure, the deep wells of each of the plurality of first sub-transistors M are connected to the deep well control potential V _dnw through the first preset resistor R _Tdnwk , the respective gates of each first sub-transistor M are connected to the output end of the first control voltage V C through the second preset resistor R _Tgk , and the respective substrates of each first sub-transistor M are connected to the output terminal of the first control voltage V _C through the third preset resistor R _Tbk. Connected to ground.

Illustratively, as shown in Figure 5, in each first LC resonant cavity TXLC _k , k identically connected sub-transistors M are stacked to form the first transistor M _Tn , and each sub-transistor M passes through a first preset resistor. One end of R _Tdnwk is connected to the deep N well of the sub-transistor M, and the other end is connected to the potential V _dnw of the control deep N well; and, each sub-transistor M also has one end connected to the first control through the second preset resistor R _Tgk The output end of the voltage VC is connected, and the other end is connected to the gate of the sub-transistor M; and each sub-transistor M is connected to the substrate of the sub-transistor M through the third preset resistor R _{Tbk at one end, and the other end is connected to the substrate of the sub-transistor M through the third preset resistor R Tbk} . Connected to ground.

In some embodiments, the switching circuit of the on/off radio frequency switch provided according to the embodiment of the present disclosure , each of the plurality of second LC resonant cavities RXLC _k includes a second transistor _MRn , a second inductor _LRn and a second resistor _RRn ;

Among them, the source stage of the second transistor M _Rn , the first end of the second inductor L _Rn and the first end of the second resistor R _Rdsn are connected as the input of the second LC resonant cavity RXLC _k ; the drain of the second transistor M _Rn pole, the second end of the second inductor L _Rn and the second end of the second resistor R _Rdsn are connected as the output of the second LC resonant cavity RXLC _k .

Exemplarily, as shown in Figure 5, the input of the m-th second resonant cavity RXLC _n is connected to the source stage of the second transistor M _Rn , one end of the second inductor L _Rn and one end of the second resistor R _Rdsn , and the The output of the m-th second resonant cavity RXLC _n is connected to the drain stage of the second transistor M _Rn , the other end of the second inductor L _Rn , and the other end of the second resistor R _Rdsn .

In some embodiments, in the switching circuit of the on/off radio frequency switch provided according to the embodiment of the present disclosure, the second transistor M _Rn included in each of the plurality of second LC resonant cavities RXLC _k is a plurality of series-connected second sub-transistors M .

Exemplarily, as shown in FIG. 5 , the second transistor M _Rn in each second resonant cavity RXLC _k is composed of p stacks of identically connected sub-transistors M. In the stacked p sub-transistor M, the source level of the p-th sub-transistor M is connected to the drain level of the p-1th sub-transistor M, and the drain level of the p-th sub-transistor M is connected to the source level of the p+1-th sub-transistor M, so that By analogy, multiple sub-transistors M are connected in series as the second transistor M _Rn in the second resonant cavity RXLC _k .

In some embodiments, the plurality of series-connected second sub-transistors M may also be field effect transistors - NMOS transistors or bipolar transistors - NPN transistors.

In some embodiments, in the switching circuit of the on/off radio frequency switch provided according to the embodiment of the present disclosure, among the plurality of second sub-transistors M _Rn , the deep well of each second sub-transistor M passes through the fourth preset resistor R _Rdnw Connected to the deep well control potential V _dnw , the gate of each second sub-transistor M is connected to the second control voltage through the fifth preset resistor R _Rg The output end of each second sub-transistor M is connected to the ground wire through a sixth preset resistor R _Rbp .

Exemplarily, as shown in Figure 5, among p identically connected sub-transistors M stacked in each second resonant cavity RXLC _k to form the second sub-transistor M _Rn , each sub-transistor M passes through a fourth preset resistor One end of R _Rdnw is connected to the deep N well of the sub-transistor M, and the other end is connected to the potential V _dnw that controls the deep N well; and each sub-transistor M is also connected to the first end of the fifth preset resistor R _Rg . control voltage The output terminal is connected, and the other terminal is connected to the gate of the sub-transistor M; and, each sub-transistor M One end of M is connected to the substrate of sub-transistor M through the sixth preset resistor R _Rbp , and the other end is connected to the ground.

It should be noted that in the embodiments of the present disclosure, n, m, k, and p involved in the above description are all positive integers greater than or equal to 1.

In this embodiment, the transistors involved in the switching circuit of the transceiver radio frequency switch provided by the present disclosure adopt a three-well process, and the deep N-well of the transistor is connected to a high potential, thereby ensuring that all parasitic diodes are cut off, thereby effectively Reduces switching signal leakage through the substrate to ground.

In addition, in the switching circuit of the radio frequency switch of the transceiver provided by the present disclosure, the appropriate number of transistors in any LC resonant cavity can be selected according to the system linearity requirements, thereby improving the flexibility of the switch design.

In some embodiments, to address the above problems, the present disclosure also provides a method for controlling a radio frequency switch of a transceiver. The control method of the transceiver radio frequency switch provided by the present disclosure is applied to the switching circuit of the transceiver radio frequency switch provided by any of the above embodiments.

As shown in Figure 6, the method for controlling the radio frequency switch of a transceiver provided by the present disclosure may include the following steps:

Step S10, when the output end of the first control voltage outputs a high voltage signal and the output end of the second control voltage outputs a low voltage signal, transmitting the first radio frequency signal emitted by the transceiver from the signal output end to the antenna end through the plurality of the first LC resonant cavities;

Step S20: When the output terminal of the first control voltage outputs a low voltage signal and the output terminal of the second control voltage outputs a high voltage signal, the antenna terminal receives the signal through the plurality of second LC resonant cavities. The second radio frequency signal is transmitted from the antenna terminal to the signal input terminal.

In this embodiment, according to the control method of the radio frequency switch of the transceiver provided by the embodiment of the present disclosure, the working principle when the radio frequency switch of the transceiver adopts the above switching circuit is that when the first control signal V _C is high, and the second control signal Signal When it is low, the first transistor on the TX link is turned on, and the second transistor on the RX link is turned off. Therefore, the radio frequency signal is transmitted from the TX end to the antenna ANT end through the open-state transistor; conversely, when the first transistor on the RX link is turned off, control signal V _C is low, while the second control signal When it is high, the first transistor on the TX link will be turned off, and the second transistor on the RX link will be turned on, so that the radio frequency signal received from the antenna ANT is transmitted to the RX terminal through the on-state transistor.

For example, as shown in Figure 7, in the switching circuit used in the radio frequency switch of the transceiver, there are two resonant cavities cascaded on the links where TX and RX are connected to the antenna terminal ANT, and the transistors in each resonant cavity are composed of It consists of three stacked transistors. The switching circuit is designed for two frequency bands: 24.25GHz-29.5GHz and 37GHz-43.5GHz.

TX uses two resonant cavities cascaded. One end of the first resonant cavity TXLC ₁ is connected to TX, and the other end is connected to the input of the second resonant cavity TXLC _2. One end of the second resonant cavity TXLC ₂ is connected to the first resonant cavity TXLC. ₁ output, the other end is connected to the antenna ANT. In the TX path, TX is connected to the source of transistor _MT1 , one end of inductor _LT1 , and one end of resistor R _Tds1 . The drain of _MT1 is connected to the source of _MT2 , and the drain of _MT2 is connected to the source of _MT3. The drain stage of _MT3 , the other end of the inductor _LT1 , and the other end of the resistor R _Tds1 are connected to the source stage of _MT4 in the second resonant cavity TXLC ₂ , one end of the inductor _LT2 , and one end of the resistor R _Tds2 . The drain stage of _MT4 is connected to the source stage of _MT5 . The drain stage of _MT5 is connected to the source stage of _MT6 . The drain stage of _MT6 , the other end of the inductor _LT2 and the other end of the resistor R _Tds2 are connected to the antenna ANT. The gate of _MT1 is connected to the control potential V _C through the inductor R _Tg1 , the substrate of _MT1 is connected to the ground through the resistor R _Tb1 , the deep N well of _MT1 is connected to the potential V _dnw through the resistor R _Tdnw1 , and the gate of _MT2 It is connected to the control potential V _C through the inductor R _Tg2 , the substrate of _MT2 is connected to the ground through the resistor R _Tb2 , the deep N well of _MT2 is connected to the potential V _dnw through the resistor R _Tdnw2 , and the gate of _MT3 is connected through the inductor R _Tg3 to the control potential V _C , the substrate of _MT3 is connected to the ground through the resistor R _Tb3 , the deep N well of _MT3 is connected to the potential V _dnw through the resistor R _Tdnw3 , and the gate of _MT4 is connected to the control potential V _C through the inductor R _Tg4 , the substrate of _MT4 is connected to the ground through the resistor R _Tb4 , the deep N well of _MT4 is connected to the potential V _dnw through the resistor R _Tdnw4 , the gate of _MT6 is connected to the control potential V _C through the inductor R _Tg5 , and the substrate of _MT5 The bottom is connected to the ground through the resistor R _Tb5 , the deep N well of _MT5 is connected to the potential V _dnw through the resistor R _Tdnw5 , the gate of _MT6 is connected to the control potential V C through the inductor R _Tg6 , and the substrate of _MT6 is connected to the control potential V _C through the resistor R _Tb6 Connected to ground, the deep N-well of _MT6 is connected to potential V _dnw through resistor _RTdnw6 . When VC is high, the path from TX to the antenna ANT is turned on at this time, and the radio frequency signal is transmitted to the antenna ANT terminal through the path of the switch. The transistors in the resonant cavity on this path use stacking technology to avoid breakdown and increase the power capacity of the switch. . AC suspension technology is used to reduce coupling leakage from the signal to the substrate and reduce insertion loss. at this time is low, the path from the antenna ANT to RX is closed, and the off-state capacitors in the two resonant cavities resonate with _LT1 and _LT2 respectively at high and low frequencies to form a broadband high-resistance open circuit, preventing the signal from leaking to RX, allowing the switch to proceed Broadband works.

RX uses two resonant cavities cascaded symmetrically with TX. One end of the first resonant cavity RXLC ₁ is connected to RX, and the other end is connected to the input of the second resonant cavity RXLC ₂ ; one end of the second resonant cavity RXLC ₂ is connected to the first The output of a resonant cavity RXLC ₁ , and the other end is connected to the antenna ANT. In the RX path, RX is connected to the source of transistor M _R1 , one end of inductor L _R1 , and one end of resistor R _Rds1 . The drain of M _R1 is connected to the source of M _R2 , and the drain of M _R2 is connected to the source of M _R3 . The drain stage of _MR3 , the other end of the inductor L _R1 , and the other end of the resistor R _Rds1 are connected to the source stage of _MR4 in the second resonant cavity RXLC ₂ , one end of the inductor L _R2 , and one end of the resistor R _Rds2 . The drain of _MR4 is connected to the source of _MR5 , and the drain of _MR5 is connected to the source of _MR6 . The drain stage of M _R6 , the other end of the inductor L _R2 , and the other end of the resistor R _Rds2 are connected to the antenna ANT. The gate of M _R1 is connected to the control potential through the inductor R _Rg1 The substrate of _MR1 is connected to the ground through the resistor R _Rb1 , the deep N well of _MR1 is connected to the potential V _dnw through the resistor R _Rdnw1 , and the gate of _MR2 is connected to the control potential through the inductor R _Rg2 The substrate of _MR2 is connected to the ground through the resistor R _Rb2 , the deep N well of _MR2 is connected to the potential V _dnw through the resistor R _Rdnw2 , and the gate of _MR3 is connected to the control potential through the inductor R _Rg3 The substrate of _MR3 is connected to the ground through the resistor R _Rb3 , the deep N well of _MR3 is connected to the potential V _dnw through the resistor R _Rdnw3 , and the gate of _MR4 is connected to the control potential through the inductor R _Rg4 The substrate of _MR4 is connected to the ground through the resistor R _Rb4 , the deep N well of _MR4 is connected to the potential V _dnw through the resistor R _Rdnw4 , and the gate of _MR6 is connected to the control potential through the inductor R _Rg5 The substrate of _MR5 is connected to the ground through the resistor R _Rb5 , the deep N well of _MR5 is connected to the potential V _dnw through the resistor R _Rdnw5 , and the gate of _MR6 is connected to the control potential through the inductor R _Rg6 The substrate of _MR6 is connected to ground through resistor R _Rb6 , and the deep N-well of _MR6 is connected to potential V _dnw through resistor R _Rdnw6 . The RX path is similar to the TX path, when When it is high, the path from the antenna ANT to the RX is turned on. The radio frequency signal passes through the path of the switch and is transmitted from the antenna ANT to the RX end. The transistors in the resonant cavity on this path use stacking technology to avoid breakdown and increase the power capacity of the switch. . AC suspension technology is used to reduce coupling leakage from the signal to the substrate and reduce insertion loss. At this time, V _C is low, and the path from the antenna ANT to TX is closed. The off-state capacitors in the two resonant cavities resonate with L _R1 and L _R2 respectively at high and low frequencies to form a broadband high-resistance open circuit, preventing the signal from leaking to TX. Enables the switch for broadband operation.

In the embodiment of the present disclosure, as shown in Figure 8, using the transceiver radio frequency switch with the switch circuit shown in Figure 7, in the two frequency bands of 24.25GHz-29.5GHz and 37GHz-43.5GHz, the isolation degree |S ₂₃ | is greater than 19.3dB, and the port standing waves S ₁₁ and S ₃₃ are less than -24dB.

In addition, as shown in Figure 9, in the embodiment of the present disclosure, the above-mentioned transceiver radio frequency switch with the switch circuit shown in Figure 7 achieves an insertion loss |S13| of less than 1.2dB in both frequency bands. As shown in Figure 10, using the transceiver RF switch with the switching circuit shown in Figure 7, the switch achieves an input 1dB compression point of 29dBm in TX mode.

Similarly, Figures 11 and 12 each show the insertion loss and port standing wave in the RX mode of the transceiver radio frequency switch using the switch circuit shown in Figure 7 in the embodiment of the present disclosure. Thanks to the symmetrical architecture, the indicators of RX mode are the same as those of TX. As shown in Figures 11 and 12, the transceiver radio frequency switch using the switch circuit shown in Figure 7 achieves an isolation greater than 19.3dB in the two frequency bands of 24.25GHz-29.5GHz and 37GHz-43.5GHz, and the port standing wave S _11. S ₂₂ is less than -24dB, and the insertion loss |S ₁₂ | is less than 1.2dB.

It should be noted that, in the embodiment of the present disclosure, the specific performance indicators of the transceiver RF switch using the switch circuit shown in FIG. 7 are shown in Table 1:

Table 1

As shown in Table 1, the transceiver radio frequency switch of the switch circuit shown in Figure 7 used in the embodiment of the present disclosure can achieve bandwidth expansion and achieve multi-band operation.

In addition, as shown in Figure 13, the insertion loss frequency response of the insertion loss with different resonant cavity numbers shows that the embodiment of the present disclosure can cover 5G communications by adjusting the cascaded resonant cavities in the switching circuit of the transceiver radio frequency switch to three. of the FR1 and FR2 bands.

In this embodiment, the control method of the radio frequency switch of the transceiver provided by the embodiment of the present disclosure is based on the switching circuit of the radio frequency switch of the transceiver. Multiple resonant cavities (also called resonant networks) are used in TX and RX, and each The resonance of each resonant cavity can achieve bandwidth expansion in different frequency bands, and the number of resonant cavities can be increased to achieve wider bandwidth expansion; and because the switching circuit eliminates the transistor connected in parallel to the ground, it effectively reduces the leakage of signals to the ground. .

The present disclosure also provides a computer storage medium, which stores a control program for the radio frequency switch of the transceiver. When the control program for the radio frequency switch of the transceiver is executed by the processor, the control program as described in any of the above embodiments is implemented. Steps of the control method of the radio frequency switch of the transceiver.

The specific embodiments of the computer storage medium of the present disclosure are basically the same as the above-mentioned embodiments of the control method of the radio frequency switch of the transceiver, and will not be described again here.

The present disclosure also provides a computer program product. The computer program product includes a computer program. When the computer program is executed by a processor, the steps of the method for controlling a radio frequency switch of a transceiver as described in any of the above embodiments are implemented.

The specific embodiments of the computer program product of the present disclosure are basically the same as the embodiments of the above-mentioned control method for the radio frequency switch of the transceiver, and will not be described again here.

The above are only preferred embodiments of the present disclosure, and are not intended to limit the patent scope of the present disclosure. Any equivalent structure or equivalent process transformation made using the contents of the disclosure description and drawings may be directly or indirectly applied in other related technical fields. , are all similarly included in the scope of patent protection of this disclosure.

Claims

A switching circuit for a transceiver radio frequency switch, including: a signal input end, a signal output end, an antenna end, a plurality of first LC resonant cavities and a plurality of second LC resonant cavities, wherein

The signal input terminal and the signal output terminal are electrically connected to the antenna terminal respectively;

A plurality of first LC resonant cavities are cascaded between the signal input end and the antenna end, and a plurality of second LC resonant cavities are cascaded between the signal output end and the antenna end, The plurality of first LC resonant cavities and the plurality of second LC resonant cavities are arranged symmetrically with respect to the antenna end;

The plurality of first LC resonant cavities are each connected to the output end of the first control voltage, the plurality of second LC resonant cavities are each connected to the output end of the second control voltage, the plurality of first LC resonant cavities and The plurality of second LC resonant cavities are each used to achieve bandwidth expansion in different frequency bands.
The switching circuit of claim 1, wherein each of the plurality of first LC resonant cavities includes a first transistor, a first inductor and a first resistor;

The source stage of the first transistor, the first end of the first inductor and the first end of the first resistor are connected as the input of the first LC resonant cavity;

The drain of the first transistor, the second end of the first inductor and the second end of the first resistor are connected to serve as the output of the first LC resonant cavity.
The switch circuit according to claim 2, wherein the first transistor is a plurality of first sub-transistors connected in series, and the plurality of first sub-transistors are field effect transistors or bipolar transistors.
The switching circuit according to claim 3, wherein among the plurality of first sub-transistors, the deep well of each first sub-transistor is connected to the deep well control potential through a first preset resistor, and each of the first sub-transistors The gate of the sub-transistor is connected to the output terminal of the first control voltage through a second preset resistor, and the substrate of each first sub-transistor is connected to the ground through a third preset resistor.
The switching circuit of claim 2, wherein each of the plurality of second LC resonant cavities includes a second transistor, a second inductor, and a second resistor;

The source stage of the second transistor, the first end of the second inductor and the first end of the second resistor are connected as the input of the second LC resonant cavity;

The drain of the second transistor, the second end of the second inductor and the second end of the second resistor are connected to serve as the output of the second LC resonant cavity.
The switch circuit according to claim 5, wherein the second transistor is a plurality of second sub-transistors connected in series, and the plurality of second sub-transistors are field effect transistors or bipolar transistors.
The switching circuit according to claim 6, wherein among the plurality of second sub-transistors, the deep well of each second sub-transistor is connected to the deep well control potential through a fourth preset resistor, and each of the second sub-transistors is connected to the deep well control potential through a fourth preset resistor. The gate of the sub-transistor is connected to the output terminal of the second control voltage through a fifth preset resistor, and the substrate of each second sub-transistor is connected to the ground wire through a sixth preset resistor.
A control method for a transceiver radio frequency switch, applied to the switching circuit of a transceiver radio frequency switch according to any one of claims 1 to 7, the control method includes:

When the output terminal of the first control voltage outputs a high voltage signal and the output terminal of the second control voltage outputs a low voltage signal, the first radio frequency signal emitted by the transceiver is passed through the plurality of first LC resonant cavities. The signal output terminal is transmitted to the antenna terminal;

When a low voltage signal is output at the output end of the first control voltage and a high voltage signal is output at the output end of the second control voltage, the second RF signal received at the antenna end is transmitted from the antenna end to the signal input end through the plurality of second LC resonant cavities.
A transceiver radio frequency switch, comprising: a switching circuit of the transceiver radio frequency switch according to any one of claims 1 to 7, a memory, a processor, and a device stored in the memory and capable of running on the processor The control program of the radio frequency switch of the transceiver, when the control program of the radio frequency switch of the transceiver is executed by the processor, the steps of the control method of the radio frequency switch of the transceiver as claimed in claim 8 are implemented.
A computer storage medium, characterized in that a control program for a transceiver radio frequency switch is stored on the computer storage medium. When the control program for a transceiver radio frequency switch is executed by a processor, the following is implemented: The steps of the control method of the radio frequency switch of the transceiver according to claim 8.