WO2024058282A1 - Dispositif d'affichage faisant appel à un élément électroluminescent et son procédé de fabrication - Google Patents

Dispositif d'affichage faisant appel à un élément électroluminescent et son procédé de fabrication Download PDF

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Publication number
WO2024058282A1
WO2024058282A1 PCT/KR2022/013674 KR2022013674W WO2024058282A1 WO 2024058282 A1 WO2024058282 A1 WO 2024058282A1 KR 2022013674 W KR2022013674 W KR 2022013674W WO 2024058282 A1 WO2024058282 A1 WO 2024058282A1
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WIPO (PCT)
Prior art keywords
paste layer
light
display device
light emitting
emitting device
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PCT/KR2022/013674
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English (en)
Korean (ko)
Inventor
강은정
위경태
김태훈
이용한
Original Assignee
엘지전자 주식회사
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Priority to PCT/KR2022/013674 priority Critical patent/WO2024058282A1/fr
Publication of WO2024058282A1 publication Critical patent/WO2024058282A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention is applicable to display device-related technical fields and, for example, relates to a display device using micro LED (Light Emitting Diode) and a method of manufacturing the same.
  • micro LED Light Emitting Diode
  • LCD Liquid Crystal Display
  • OLED Organic Light Emitting Diodes
  • LED Light Emitting Diode
  • GaAsP compound semiconductor in 1962, it has been followed by GaP:N series green LED. It has been used as a light source for display images in electronic devices, including information and communication devices. Accordingly, a method of solving the above-mentioned problems can be proposed by implementing a display using a semiconductor light-emitting device.
  • the semiconductor light emitting device has various advantages over filament-based light emitting devices, such as long lifespan, low power consumption, excellent initial driving characteristics, and high vibration resistance.
  • the light emitting device can be transferred directly to the wiring electrode or using a donor substrate.
  • a conductive ball or conductive film may be used between the electrode of the light emitting device and the wiring electrode.
  • ACF conductive film
  • ACP conductive paste
  • thermal cementation bonding has a limited bondable area due to the flatness and pressure of the bonding head.
  • the spread of solder may cause an electrical short problem between the N and P electrode pads of the light emitting device.
  • the technical problem to be solved by the present invention is to provide a display device using a light-emitting device and a manufacturing method thereof that enable electrical connection to be made under relaxed bonding conditions between a light-emitting device having a micro or millimeter size and a wiring electrode.
  • the object of the present invention is to provide a display device using a light-emitting device and a manufacturing method thereof that enable stable bonding of the light-emitting device when there is a deviation in the height (size) of the light-emitting device.
  • the present invention provides a display device using a light emitting element, comprising: a wiring board; electrode pads defining a unit subpixel area and arranged on the wiring board; a light emitting device having a first type electrode disposed on the electrode pad; a connection portion including a plurality of conductive particles that electrically connects the first type electrode of the light emitting device and the electrode pad; a first paste layer located on the light emitting device and the connection portion; and a second paste layer located on the first paste layer.
  • At least one of the first paste layer and the second paste layer may be located in units of one pixel area.
  • the height of the first paste layer may be the same as the top surface of the light emitting device.
  • the maximum height of the first paste layer may correspond to the highest height among the light emitting devices.
  • it may further include a cover layer located on the second paste layer.
  • the interface between the first paste layer and the second paste layer may connect the neighboring light emitting devices.
  • the interface between the first paste layer and the second paste layer may have a hang structure between the neighboring light emitting devices.
  • the height of the row structure may be greater than the height difference of the neighboring light emitting devices.
  • the height of the row structure may be more than half the height of the light emitting device.
  • the second paste layer may include at least one of reflective particles and black particles.
  • the second paste layer may be used to prevent the light emitting device from being separated from the electrode pad.
  • the present invention provides a method of manufacturing a display device using a light emitting element, comprising: applying a first paste layer containing conductive particles on a wiring board on which electrode pads are arranged; disposing a light emitting device on the electrode pad; Applying a second paste layer on the first paste layer; and compressing the light emitting device to be electrically connected to the electrode pad.
  • applying the first paste layer including the conductive particles may include transferring the conductive particles onto the electrode pad; And it may include applying the first paste layer on the electrode pad to which the conductive particles are transferred.
  • the first paste layer and the second paste layer may have different curing speeds.
  • the pressing step includes placing a first bonding head on the second paste layer and a second bonding head below the distribution substrate, so that the first bonding head and the second bonding head They can be compressed in a direction that brings them closer to each other.
  • the compressing step may be performed while applying heat.
  • At least one of the first paste layer and the second paste layer may be applied in units of one pixel area.
  • the height deviation of the light emitting device may be 10 to 20 ⁇ m.
  • the gap between neighboring electrode pads may be 35 ⁇ m or less.
  • the second paste layer may be used to prevent the light emitting device from being separated from the electrode pad due to the elasticity of the conductive particles after the pressing step.
  • the electrical contact area between conductive nanoparticles and conductive microparticles is expanded and excessive pressing is prevented, thereby relaxing bonding conditions between a light emitting device having a micro or millimeter size and a wiring electrode. Electrical connections can be made under
  • stable bonding of the light emitting device can be achieved when there is a deviation in the height (size) of the light emitting device.
  • stable bonding of light emitting devices can be achieved when the gap between light emitting devices is narrow.
  • FIG. 1 is a cross-sectional view showing a unit pixel of a display device using a light-emitting device according to an embodiment of the present invention.
  • Figure 2 is a cross-sectional view showing a unit pixel of a display device using a light-emitting device according to another embodiment of the present invention.
  • 3 to 6 are cross-sectional schematic diagrams showing manufacturing steps of a display device using a light-emitting device according to an embodiment of the present invention.
  • Figure 7 is a flowchart showing the manufacturing steps of a display device using a light-emitting device according to an embodiment of the present invention.
  • Figure 8 is a diagram showing an example of a light-emitting device that can be applied to a display device using a light-emitting device according to an embodiment of the present invention.
  • Figure 9 is a photograph showing a cross section of a display device manufactured through a normal manufacturing process as a comparative example.
  • Figure 10 is a photograph showing a cross section of a display device manufactured according to an embodiment of the present invention.
  • Figure 11 is a photograph showing the screen state of a display device according to a comparative example.
  • Figure 12 is a photograph showing the screen state of a display device according to an embodiment of the present invention.
  • an element such as a layer, region or substrate is referred to as being “on” another component, it is to be understood that it may be present directly on the other element or that there may be intermediate elements in between. There will be.
  • the semiconductor light emitting devices mentioned in this specification include LEDs, micro LEDs, etc., and may be used interchangeably.
  • FIG. 1 is a cross-sectional view showing a unit pixel of a display device using a light-emitting device according to an embodiment of the present invention.
  • the light-emitting devices 310, 320, and 330 forming a unit pixel may include a first light-emitting device 310, a second light-emitting device 320, and a third light-emitting device 330.
  • the first light-emitting device 310 may be a red light-emitting device 310 that emits red light
  • the second light-emitting device 320 may be a green light-emitting device 320 that emits green light
  • the third light-emitting device 330 may be a blue light-emitting device 330 that emits blue light.
  • the wiring board 100 may have a plurality of wiring electrodes (not shown) divided and positioned on the board 110.
  • the wiring electrode may include a data electrode (pixel electrode) and a scan electrode (common electrode).
  • three light emitting elements 310, 320, and 330 may form a unit pixel. These unit pixels may be repeatedly provided on the wiring board 100. At this time, one light emitting device may form a unit subpixel.
  • Figure 1 shows the light emitting elements 310, 320, and 330 installed by flip chip bonding.
  • Electrode pads 120 (121, 122, 123) connected to wiring electrodes may be located on the substrate 110.
  • the shapes of the electrode pads 120 (121, 122, and 123) may be shown in a simplified manner.
  • the electrodes (312, 313; see FIG. 8) of the light emitting devices (310, 320, 330) may be electrically connected to the electrode pads (121, 122, 123) by the conductive particles (400, 410).
  • the gap between the electrode pads 120 (121, 122, and 123) may be 35 ⁇ m or less. That is, the gap between neighboring electrode pads 121, 122, and 123 may be 35 ⁇ m or less.
  • connection part 410 and the multi-layered paste layers 200 and 210 covering the connection part 410 can be formed as described below.
  • the conductive particles 400 and 410 may have a size in micrometers ( ⁇ m). Accordingly, the conductive particles 400 and 410 may also be referred to as micro conductive particles or conductive balls. These conductive particles (400, 410) can form an electrical connection between the electrode pads (121, 122, 123) and the light emitting devices (310, 320, 330). For example, the conductive particles 400 are applied between the electrode pads 121, 122, and 123 and the light emitting devices 310, 320, and 330 before forming the connection portion, and then between the electrode pads 121, 122, and 123 and the light emitting devices. It is transformed through the cementation process of (310, 320, and 330) to form the connection portion (410). That is, the conductive particles 400 may be transformed into conductive particles 410 through a bonding process of the electrode pads 121, 122, and 123 and the light emitting devices 310, 320, and 330.
  • the light emitting elements 310, 320, and 330 in which at least one of the electrodes 312 and 313 (for example, the first type electrode 312) is disposed on the electrode pads 121, 122, and 123. can be placed.
  • the electrode pad 120 arranged on the wiring board 100 may be connected to a thin film transistor (TFT) layer.
  • TFT thin film transistor
  • Data electrodes pixel electrodes
  • TFT thin film transistor
  • connection portion including a plurality of conductive particles 410 that electrically connects the first type electrode 312 of the light emitting device 310, 320, and 330 and the electrode pads 121, 122, and 123 may be provided.
  • the conductive particles 410 and the connection portion 410 located between the electrode pads 121, 122, and 123 and the light emitting elements 310, 320, and 330 will be described using the same reference numerals.
  • a first paste layer 200 may be positioned on the light emitting devices 310, 320, and 330 and the connection portion 410.
  • the second paste layer 210 may be located on the first paste layer 200.
  • At least one of the first paste layer 200 and the second paste layer 210 may be located in units of one pixel area. That is, at least one of the first paste layer 200 and the second paste layer 210 may be positioned to cover the three light emitting devices 310, 320, and 330 forming one pixel.
  • the first paste layer 200 is positioned to cover three light-emitting devices 310, 320, and 330 forming one pixel
  • the second paste layer 210 is the first paste layer forming one area.
  • An example located on (200) is shown. However, depending on the embodiment, the first paste layer 200 may be positioned to cover a plurality of pixel areas. Additionally, the second paste layer 210 may be positioned to cover a plurality of first paste layers 200 forming several regions.
  • the height of the first paste layer 200 may be substantially the same as the top surface of the light emitting devices 310, 320, and 330.
  • the meaning of “substantially” may include errors that can be tolerated considering the electrical connection (for example, thermal compression) process of the light emitting elements 310, 320, and 330 and the electrode pads 121, 122, and 123. It can mean.
  • the maximum height of the first paste layer 200 may correspond to the highest height among the light emitting devices 310, 320, and 330.
  • these light-emitting devices (310, 320, and 330) may have height deviations, and the maximum height of the first paste layer 200 is the highest among the light-emitting devices (310, 320, and 330) considering this height deviation. It may correspond to the height of a light-emitting device (in the case of FIG. 1, the third light-emitting device 330).
  • first paste layer 200 and the second paste layer 210 are made of separate layers, an interface may be located between the first paste layer 200 and the second paste layer 210. That is, the first paste layer 200 and the second paste layer 210 can be distinguished from each other.
  • the interface between the first paste layer 200 and the second paste layer 210 may connect neighboring light emitting devices to each other. That is, the interface between the first paste layer 200 and the second paste layer 210 may be formed by connecting the upper surfaces of the light emitting devices 310, 320, and 330 to each other.
  • the interface between the first paste layer 200 and the second paste layer 210 may have a hang structure between neighboring light emitting devices.
  • a first interface 201 may be formed between the first light-emitting device 310 and the second light-emitting device 320. Additionally, a second interface 202 may be formed between the second light-emitting device 320 and the third light-emitting device 330. At this time, at least one of the first interface 201 and the second interface 202 may have a hang structure. That is, at least one of the first interface 201 and the second interface 202 may be formed to continuously connect the upper surfaces of neighboring light-emitting devices.
  • this hang structure may be greater than the height difference of neighboring light emitting devices 310, 320, and 330.
  • the height of the row structure may be more than half the height of the light emitting devices 310, 320, and 330.
  • the first paste layer 200 can be formed by connecting the upper surfaces of the light emitting devices 310, 320, and 330 forming one pixel.
  • the third interface 203 located outside the first light-emitting device 310 may be formed by connecting the top surface of the substrate 110 and the top surface of the first light-emitting device 310.
  • the fourth interface 204 located outside the third light emitting device 330 may be formed by connecting the top surface of the substrate 110 and the top surface of the third light emitting device 330.
  • the light emitting elements 310, 320, and 330 may have height differences. Accordingly, the height of the third interface 203 and the height of the fourth interface 204 may be different from each other.
  • the first light-emitting device 310 may have a first height h1
  • the second light-emitting device 320 may have a second height h2
  • the third light-emitting device 330 may have a second height h2. It may have a third height (h3).
  • the height difference of these light emitting elements 310, 320, and 330 may be 10 to 20 ⁇ m.
  • This first paste layer 200 can stably protect the connection portion 410 between the light emitting devices 310, 320, and 330 and the electrode pads 121, 122, and 123. Additionally, the first paste layer 200 can form a stable connection structure by binding the connection portion 410 between the light emitting devices 310, 320, and 330 having height differences and the electrode pads 121, 122, and 123.
  • the second paste layer 210 is used to prevent the light emitting elements 310, 320, and 330 from separating from the electrode pads during the bonding process of the light emitting elements 310, 320, and 330 and the electrode pads 121, 122, and 123. It may be for. This will be described in detail later.
  • the first paste layer 200 and the second paste layer 210 may include different materials.
  • the first paste layer 200 and the second paste layer 210 may be formed of different materials.
  • the first paste layer 200 and the second paste layer 210 may be formed of materials having different curing speeds.
  • a cover layer 500 may be located on the second paste layer 210. This cover layer 500 can protect the second paste layer 210. In some cases, the cover layer 500 may flatten the second paste layer 210. However, this cover layer 500 may be omitted. Additionally, a separate top cover may be positioned on the cover layer 500.
  • Figure 2 is a cross-sectional view showing a unit pixel of a display device using a light-emitting device according to another embodiment of the present invention.
  • a display device 10 is shown in which light emitting elements 310, 320, and 330 forming unit pixels are installed on a wiring board 100.
  • the light-emitting devices 310, 320, and 330 forming a unit pixel may include a first light-emitting device 310, a second light-emitting device 320, and a third light-emitting device 330.
  • the wiring substrate 100 includes a substrate 110, and electrode pads 120 (121, 122, 123) connected to wiring electrodes may be located on the substrate 110.
  • electrode pads 120 121, 122, and 123
  • the shapes of the electrode pads 120 (121, 122, and 123) may be shown in a simplified manner.
  • the electrodes (312, 313; see FIG. 8) of the light emitting devices (310, 320, 330) may be electrically connected to the electrode pads (121, 122, 123) by the conductive particles (400, 410).
  • These conductive particles (400, 410) can form an electrical connection between the electrode pads (121, 122, 123) and the light emitting devices (310, 320, 330).
  • the conductive particles 400 may be transformed into conductive particles 410 through a bonding process of the electrode pads 121, 122, and 123 and the light emitting elements 310, 320, and 330.
  • a first paste layer 200 may be positioned on the light emitting devices 310, 320, and 330 and the connection portion 410.
  • the second paste layer 210 may be located on the first paste layer 200.
  • the second paste layer 210 may include reflective particles 211 through which light emitted from the light emitting devices 310, 320, and 330 is reflected and emitted to the outside.
  • black particles 212 that can improve contrast may be included in the second paste layer 210.
  • at least one of reflective particles 211 and black particles 212 may be included in the second paste layer 210.
  • this embodiment may be the same as the embodiment described above with reference to FIG. 1. Therefore, overlapping descriptions are omitted.
  • FIG. 3 to 6 are cross-sectional schematic diagrams showing manufacturing steps of a display device using a light-emitting device according to an embodiment of the present invention.
  • Figure 7 is a flowchart showing the manufacturing steps of a display device using a light-emitting device according to an embodiment of the present invention.
  • a first paste layer 200 including conductive particles 400 is formed on a wiring board 100 in which electrode pads 121, 122, 123; 120 are arranged on one surface of the board 110. ) can be applied (S10, S20).
  • the conductive particles 400 may be evenly distributed within the first paste layer 200. Accordingly, a plurality of conductive particles 400 may be located on the electrode pads 121, 122, and 123. Additionally, conductive particles 400 may be located in areas other than the electrode pads 121, 122, and 123.
  • the step of applying the conductive particles 400 (S10) and the step of printing the first paste 200 (S20) can be performed simultaneously by printing the first paste layer 200 including the conductive particles 400. You can.
  • the electrode pads 121, 122, and 123 onto which the conductive particles 400 are applied. can be printed to cover the first paste layer 200 (S20).
  • the step of applying the first paste layer 200 including the conductive particles 400 includes transferring the conductive particles 400 onto the electrode pads 121, 122, and 123, and It may include applying the first paste layer 200 on the electrode pads 121, 122, and 123 onto which the conductive particles 400 are transferred.
  • Anisotropic Conductive Paste which is a liquid resin in which conductive particles 400 are dispersed
  • Immovable Conductive Paste which forms conductive balls only on the electrodes and then coats them with liquid resin
  • ACP Anisotropic Conductive Paste
  • ICP Immovable Conductive Paste
  • other materials capable of being electrically connected to the electrode may be applied in addition to the conductive particles 400.
  • At least three electrode pads 121, 122, and 123 may correspond to light emitting elements defining one pixel.
  • the gap between the electrode pads 120 may be 35 ⁇ m or less. That is, the gap between neighboring electrode pads 121, 122, and 123 may be 35 ⁇ m or less.
  • a structure of a connection portion 410 for electrical connection of the light emitting elements 310, 320, and 330 and a multi-layered paste layer 200, 210 covering the connection portion 410 can be formed.
  • the conductive particles 400 and 410 may have a size in micrometers ( ⁇ m). Accordingly, the conductive particles 400 and 410 may also be referred to as micro conductive particles or conductive balls.
  • the first paste layer 200 may be positioned to cover at least three electrode pads 121, 122, and 123 corresponding to one pixel area.
  • the first paste layer 200 may be positioned to locally cover at least three electrode pads 121, 122, and 123 corresponding to one pixel area.
  • the first paste layer 200 may be positioned to cover a plurality of pixel areas.
  • the light emitting elements 310, 320, and 330 may be positioned on the electrode pad 120.
  • the corresponding light emitting elements 310, 320, and 330 may be positioned on the three electrode pads 121, 122, and 123.
  • the light emitting elements 310, 320, and 330 may have height differences.
  • the first light-emitting device 310 may have a first height (h1; see FIG. 1)
  • the second light-emitting device 320 may have a second height (h2; see FIG. 1).
  • the third light emitting device 330 may have a third height (h3; see FIG. 1).
  • the height difference of these light emitting elements 310, 320, and 330 may be 10 to 20 ⁇ m.
  • the second paste layer 210 may be applied (printed) to cover the light emitting elements 310, 320, and 330 (S30).
  • This second paste layer 210 may be formed to cover the first paste layer 200 together with the light emitting elements 310, 320, and 330.
  • the thickness of the applied second paste layer 210 may be thicker than the first paste layer 200.
  • the first paste layer 200 and the second paste layer 210 may have different physical properties.
  • the first paste layer 200 and the second paste layer 210 may have different physical properties such as viscosity, curing speed, or hardness after curing.
  • FIG. 5 shows an example in which the second paste layer 210 is located on the first paste layer 200 forming one area.
  • the first paste layer 200 may be positioned to cover a plurality of pixel areas.
  • the second paste layer 210 may be positioned to cover a plurality of first paste layers 200 forming several regions.
  • a step (S40) of pressing (bonding) the light emitting devices 310, 320, and 330 to be electrically connected to the electrode pads 121, 122, and 123 may be performed.
  • This pressing step (S40) is performed by placing the first bonding head 610 on the second paste layer 210 and the second bonding head 600 below the wiring board 100, so that the first bonding head ( 610) and the second bonding head 600 may be compressed in a direction that brings them closer to each other.
  • this compressing step (S40) may be performed while applying heat. That is, in this pressing process (S40), the light emitting elements 310, 320, and 330 and the electrode pads 121, 122, and 123 may be compressed in a direction that brings them closer to each other while applying heat.
  • the second paste layer 210 is separated from the electrode pads 121, 122, and 123 by the elasticity of the conductive particles 400 after the pressing step (S40). This phenomenon can be prevented.
  • the light emitting elements 310, 320, and 330 can be stably electrically connected (bonded) to the electrode pads 121, 122, and 123 by the conductive particles 410.
  • a plurality of light emitting elements 310, 320, and 330 having thickness (height) variations can be stably electrically connected (bonded) to the electrode pads 121, 122, and 123.
  • the plurality of light emitting elements 310, 320, and 330 can be electrically connected to the electrode pads 121, 122, and 123 even if there is a thickness (height) variation.
  • the printing thickness of the first paste layer 200 may be smaller than the thickness of the light emitting elements 310, 320, and 330 to prevent the light emitting elements 310, 320, and 330 from moving in position during the transfer process.
  • At least three light emitting devices (310, 320, 330) forming one RGB pixel can be mounted on a single printed pattern. Accordingly, planarization of the portion where the light emitting elements 310, 320, and 330 will be located in the printed pattern may be required. However, when the pitch between the light emitting elements 310, 320, and 330 becomes narrow or the size of the light emitting elements 310, 320, and 330 becomes smaller, there may be a limit to forming the pattern size itself large.
  • the printing thickness of the first paste layer 200 is smaller than the thickness of the light emitting devices 310, 320, and 330.
  • a second paste layer 210 is used to cover all the steps between the light emitting elements 310, 320, and 330.
  • Figure 8 is a diagram showing an example of a light-emitting device that can be applied to a display device using a light-emitting device according to an embodiment of the present invention.
  • FIG. 8(A) shows the first side of the light emitting device 310
  • FIG. 8(B) shows the second side of the light emitting device 310 where the first type electrode 312 and the second type electrode 313 are located. It represents the side.
  • the first type electrode 312 and the second type electrode 313 may be electrically connected to the semiconductor layer 311 of the light emitting device 310.
  • the first type electrode 312 may be connected to a first type semiconductor (e.g., a p-type semiconductor), and the second type electrode 313 may be connected to a second type semiconductor (e.g., an n-type semiconductor). -type semiconductor) can be connected.
  • a first type semiconductor e.g., a p-type semiconductor
  • a second type semiconductor e.g., an n-type semiconductor
  • the red light emitting device 310 may have a first height h1.
  • a growth substrate 314 may be located on the first side of the light emitting device 310.
  • a structure for light extraction may be located on the first side.
  • Figure 9 is a photograph showing a cross section of a display device manufactured through a normal manufacturing process as a comparative example. Additionally, Figure 10 is a photograph showing a cross section of a display device manufactured according to an embodiment of the present invention.
  • Figure 9 shows a cross-section of a display device including a single paste layer.
  • This light-emitting device 32 cannot be fixed on the electrode pad due to height deviation during the pressing process, and a gap occurs between the light-emitting device 32 and the electrode pad.
  • the light emitting elements 310, 320, and 330 having thickness variations are stably bonded to the electrode pad by the structure and manufacturing process described above.
  • the first paste layer 200 containing conductive particles and the second paste layer 210 for fixing the light emitting devices 310, 320, and 330 can be confirmed in a cross-sectional view.
  • hanging structures 201 and 202 are formed between the first light-emitting device 310 and the second light-emitting device 320, and between the second light-emitting device 320 and the third light-emitting device, respectively. ) phenomenon can be confirmed.
  • the gap between the light emitting elements 310, 320, and 330 narrows, the difficulty of bonding increases, and an appropriate gap can be determined for visibility of the display module.
  • the spacing between the light emitting elements 310, 320, and 330 is approximately 1.2 times the height of the light emitting elements 310, 320, and 330.
  • the mounting precision in the pick and place method
  • the mounting precision is ⁇ 15 ⁇ m, it can be seen that stable bonding can be achieved when the height to spacing of the light emitting elements 310, 320, and 330 is at a level of 1.
  • Figure 11 is a photograph showing the screen state of a display device according to a comparative example. Additionally, Figure 12 is a photograph showing the screen state of a display device according to an embodiment of the present invention.
  • part (A) shows a state in which the green light-emitting device 320 is turned on
  • part (B) shows a state in which the red light-emitting device 310 is turned on.
  • a display device using a semiconductor light-emitting device such as micro LED.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

La présente divulgation est applicable au domaine technique des dispositifs d'affichage et concerne un dispositif d'affichage faisant intervenir, par exemple, une microdiode électroluminescente (DEL), ainsi qu'un procédé de fabrication de celui-ci. La présente invention concerne un dispositif d'affichage faisant appel à un élément électroluminescent, comprenant : un substrat de câblage ; un plot d'électrode qui délimite des régions de sous-pixels unitaires et qui est disposé sur le substrat de câblage ; un élément électroluminescent ayant une électrode de premier type disposée sur le plot d'électrode ; une unité de connexion comprenant une pluralité de particules conductrices pour connecter électriquement l'électrode de premier type de l'élément électroluminescent au plot d'électrode ; une première couche de pâte située sur l'élément électroluminescent et l'unité de connexion ; et une seconde couche de pâte située sur la première couche de pâte.
PCT/KR2022/013674 2022-09-14 2022-09-14 Dispositif d'affichage faisant appel à un élément électroluminescent et son procédé de fabrication WO2024058282A1 (fr)

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PCT/KR2022/013674 WO2024058282A1 (fr) 2022-09-14 2022-09-14 Dispositif d'affichage faisant appel à un élément électroluminescent et son procédé de fabrication

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150249069A1 (en) * 2012-09-25 2015-09-03 Sharp Kabushiki Kaisha Display device and method for manufacturing display device
JP2017539097A (ja) * 2015-07-14 2017-12-28 ゴルテック．インク マイクロ発光ダイオードの搬送方法、製造方法、マイクロ発光ダイオード装置、及び電子機器
KR20180114439A (ko) * 2017-04-10 2018-10-18 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
JP2020092159A (ja) * 2018-12-05 2020-06-11 株式会社ブイ・テクノロジー マイクロｌｅｄ実装構造、マイクロｌｅｄディスプレイ及びマイクロｌｅｄディスプレイの製造方法
KR20210145724A (ko) * 2019-04-24 2021-12-02 서울바이오시스 주식회사 발광 다이오드 디스플레이 패널, 그것을 갖는 디스플레이 장치 및 그것을 제조하는 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150249069A1 (en) * 2012-09-25 2015-09-03 Sharp Kabushiki Kaisha Display device and method for manufacturing display device
JP2017539097A (ja) * 2015-07-14 2017-12-28 ゴルテック．インク マイクロ発光ダイオードの搬送方法、製造方法、マイクロ発光ダイオード装置、及び電子機器
KR20180114439A (ko) * 2017-04-10 2018-10-18 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
JP2020092159A (ja) * 2018-12-05 2020-06-11 株式会社ブイ・テクノロジー マイクロｌｅｄ実装構造、マイクロｌｅｄディスプレイ及びマイクロｌｅｄディスプレイの製造方法
KR20210145724A (ko) * 2019-04-24 2021-12-02 서울바이오시스 주식회사 발광 다이오드 디스플레이 패널, 그것을 갖는 디스플레이 장치 및 그것을 제조하는 방법

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