WO2024048241A1 - Composition, procédé de traitement d'un objet à traiter et procédé de fabrication d'un dispositif à semi-conducteur - Google Patents

Composition, procédé de traitement d'un objet à traiter et procédé de fabrication d'un dispositif à semi-conducteur Download PDF

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WO2024048241A1
WO2024048241A1 PCT/JP2023/029251 JP2023029251W WO2024048241A1 WO 2024048241 A1 WO2024048241 A1 WO 2024048241A1 JP 2023029251 W JP2023029251 W JP 2023029251W WO 2024048241 A1 WO2024048241 A1 WO 2024048241A1
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composition
salt
group
acid
composition according
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Japanese (ja)
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篤史 水谷
智威 高橋
萌 成田
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富士フイルム株式会社
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/34—Derivatives of acids of phosphorus
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/72—Ethers of polyoxyalkylene glycols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/83—Mixtures of non-ionic with anionic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

Definitions

  • the present invention relates to a composition, a method for treating an object to be treated, and a method for manufacturing a semiconductor device.
  • the chemical solution used for etching is a chemical solution that can selectively remove only a specific material.
  • Ru ruthenium
  • Patent Document 1 describes a composition that can selectively remove residues originating from copper, tungsten, a low-k material, titanium nitride, and a resist film from a semiconductor substrate having a resist film.
  • compositions that include an oxidizing agent, an etchant, and a solvent and are substantially free of hydrogen peroxide.
  • the present inventors investigated the characteristics of the composition described in Patent Document 1, and found that when a workpiece containing ruthenium (Ru) was treated with the composition, the removability of ruthenium (hereinafter simply referred to as It was found that the properties (also referred to as "Ru removability") were not sufficient and that further improvements were required.
  • ruthenium ruthenium
  • the present inventor has completed the present invention as a result of intensive studies to solve the above problems. That is, it has been found that the above problem can be solved by the following configuration.
  • the ionic surfactant is an anionic surfactant.
  • the anionic surfactant has at least one of a sulfonic acid group and a phosphoric acid group.
  • the nonionic surfactant has an HLB value of 9.0 to 20.0.
  • the periodic acid or its salt contains at least one selected from the group consisting of orthoperiodic acid, metaperiodic acid, and salts thereof.
  • the quaternary ammonium salt is tetramethylammonium salt, tetraethylammonium salt, tetrabutylammonium salt, ethyltrimethylammonium salt, triethylmethylammonium salt, diethyldimethylammonium salt, tributylmethylammonium salt, dimethyldipropylammonium salt , benzyltrimethylammonium salt, benzyltriethylammonium salt, (2-hydroxyethyl)trimethylammonium salt, and triethyl(2-hydroxyethyl)ammonium salt, [1] to [ 10].
  • a method for treating an object comprising the step of bringing a ruthenium-containing object into contact with the composition according to any one of [1] to [14].
  • a method for manufacturing a semiconductor device comprising the method for treating a workpiece according to [15].
  • a composition having excellent Ru removability can be provided. Further, according to the present invention, a method for treating a workpiece and a method for manufacturing a semiconductor device using the above composition can also be provided.
  • FIG. 4 is a schematic diagram of an upper cross-sectional view showing an example of the workpiece shown in FIG. 3 after performing step A1; It is a schematic diagram which shows an example of the to-be-processed object used in process A2.
  • FIG. 2 is a schematic cross-sectional view showing an example of a workpiece before dry etching. It is a cross-sectional schematic diagram which shows another example of a to-be-processed object used in process A4.
  • FIG. 2 is a schematic cross-sectional view showing an example of an object to be processed before forming a Ru-containing film. It is a cross-sectional schematic diagram which shows an example of the to-be-processed object used in process A6.
  • a numerical range expressed using " ⁇ " means a range that includes the numerical values written before and after " ⁇ " as lower and upper limits.
  • the compounds described herein may include structural isomers, optical isomers, and isotopes, unless otherwise specified. Moreover, one type of structural isomer, optical isomer, and isotope may be contained alone or two or more types may be included. Furthermore, in the description of groups (atomic groups) in this specification, descriptions that do not indicate substituted or unsubstituted include groups containing no substituents as well as groups containing substituents.
  • alkyl group includes not only an alkyl group containing no substituent (unsubstituted alkyl group) but also an alkyl group containing a substituent (substituted alkyl group).
  • the bonding direction of the divalent group (eg, -COO-) described herein is not limited unless otherwise specified.
  • Y in a compound represented by the formula "X-Y-Z" is -COO-
  • the above compound may be "X-O-CO-Z", and "X-CO -O-Z”.
  • total solid content means the total content of all components contained in the composition other than solvents such as water and organic solvents.
  • ppm means “parts-per-million ( 10-6 )
  • ppb means “parts-per-billion (10-9)
  • ppt means “parts-per-billion ( 10-9 )”. parts-per-trillion (10 ⁇ 12 )”.
  • weight average molecular weight (Mw) and number average molecular weight (Mn) are expressed using TSKgel GMHxL, TSKgel G4000HxL, or TSKgel G2000HxL (all manufactured by Tosoh Corporation) as a column, and using tetrahydrofuran as a column.
  • Mw weight average molecular weight
  • Mn number average molecular weight
  • This is a value calculated using polystyrene as a standard material measured by a gel permeation chromatography (GPC) analyzer using a differential refractometer as an eluent, a differential refractometer as a detector, and polystyrene as a standard material.
  • the molecular weight of a compound having a molecular weight distribution is a weight average molecular weight.
  • composition of the present invention comprises at least one member selected from the group consisting of periodic acid or a salt thereof, a quaternary ammonium salt, an anionic surfactant, a cationic surfactant, and an amphoteric surfactant. ionic surfactant and nonionic surfactant.
  • the contact angle of the composition with respect to Ru can be reduced.
  • the contact area between the composition and the Ru portion could be increased, and sufficient Ru removal performance could be exhibited from the treated object containing Ru.
  • the composition of the present invention has excellent Ru removal properties even when applied to bevel cleaning.
  • Periodic acid or its salt The composition of the invention contains periodic acid or a salt thereof.
  • periodic acid or a salt thereof include orthoperiodic acid (H 5 IO 6 ), metaperiodic acid (HIO 4 ), and salts thereof (eg, sodium salt or potassium salt).
  • periodic acid or a salt thereof As periodic acid or a salt thereof, orthoperiodic acid, orthoperiodate, or metaperiodic acid is particularly preferable, and orthoperiodic acid is more preferable.
  • One type of periodic acid or a salt thereof may be used, or two or more types may be used in combination.
  • the content of periodic acid or its salt is preferably 0.01 to 20.00% by mass, more preferably 0.01 to 15.00% by mass, and 0.10 to 10% by mass, based on the total mass of the composition. 0.00% by weight is more preferable, and 0.10 to 5.00% by weight is particularly preferable.
  • the total content of periodic acid or its salts is preferably within the above-mentioned preferred range.
  • a commercially available product may be used as the source of the periodic acid or its salt.
  • a commercial product either a solid commercial product or a liquid commercial product may be used.
  • liquid commercially available products include aqueous solutions containing periodic acid or its salts. Solutions of the above solid commercial products dissolved in water and liquid commercial products (especially aqueous solutions containing periodic acid or its salts) contain chloride ions, bromide ions, nitrate ions, sulfate ions, phosphorus ions, etc. Anions selected from the group consisting of acid ions and iodine ions may also be included.
  • the content of the anion is preferably 10 mass ppt to 1000 mass ppm based on the total mass of the aqueous solution. Furthermore, even in a solution in which a solid commercial product is dissolved in water (concentration of periodic acid or its salt: 50% by mass), the content of the above anions is 10 mass ppt to 10 mass ppt based on the total mass of the aqueous solution. 1000 mass ppm is preferred.
  • the composition of the invention includes a quaternary ammonium salt.
  • the quaternary ammonium salt is not particularly limited as long as it has a quaternary ammonium cation site in which a nitrogen atom is bonded to four hydrocarbon groups, but it does not have a surfactant function. This is a different compound from the cationic surfactant described below.
  • quaternary ammonium salts are compounds having a quaternary ammonium cation moiety, such as alkylpyridinium, in which the nitrogen atom in the pyridine ring is bonded to a hydrocarbon group (for example, an alkyl group and an aryl group). There may be.
  • the number of carbon atoms in the quaternary ammonium cation moiety in the quaternary ammonium salt is preferably 4 to 20, more preferably 5 to 15, and even more preferably 6 to 20. Note that the above carbon number refers to the total number of carbon atoms contained in the quaternary ammonium cation site, and does not include the number of carbon atoms in the anion forming the salt.
  • the anion moiety corresponding to the quaternary ammonium cation moiety is not particularly limited, but includes, for example, hydroxide ion, halide ion (chloride ion, bromide ion, fluoride ion, or iodide ion), acetic acid ion ion, carbonate ion, and sulfate ion.
  • the quaternary ammonium salt includes a quaternary ammonium salt represented by the following formula (a).
  • R a to R d each independently represent an alkyl group that may have a substituent.
  • the alkyl group may be linear or branched, and preferably linear.
  • the number of carbon atoms in the alkyl moiety of the alkyl group is preferably 1 to 10, more preferably 1 to 6, even more preferably 1 to 4, particularly preferably 1 or 2.
  • Specific examples of the above alkyl groups include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, tridecyl group, and tetradecyl group.
  • R a to R d examples include a hydroxy group and a phenyl group.
  • the alkyl group having a substituent include a 2-hydroxyethyl group, a 2-hydroxypropyl group, and a benzyl group.
  • the methylene group constituting the alkyl group may be substituted with a divalent substituent such as -O-.
  • the total number of carbon atoms contained in R a to R d is not particularly limited, but is preferably 4 to 20, more preferably 5 to 15, and even more preferably 6 to 20.
  • the alkyl groups which may have two substituents selected from R a to R d may be bonded to each other to form a ring.
  • a - represents a monovalent anion.
  • Examples of the monovalent anion represented by A ⁇ include F ⁇ , Cl ⁇ , Br ⁇ , OH ⁇ , NO 3 ⁇ , CH 3 COO ⁇ , and CH 3 CH 2 SO 4 ⁇ , and F ⁇ , Cl - , Br - or OH - is preferred, Cl - or OH - is more preferred, and OH - is even more preferred.
  • Examples of the quaternary ammonium salt represented by formula (a) include tetramethylammonium salt, tetraethylammonium salt, tetrabutylammonium salt, ethyltrimethylammonium salt, triethylmethylammonium salt, diethyldimethylammonium salt, tributylmethylammonium salt, Dimethyldipropylammonium salt, dodecyltrimethylammonium salt, trimethyltetradecylammonium salt, hexadecyltrimethylammonium salt, benzyltrimethylammonium salt, benzyltriethylammonium salt, (2-hydroxyethyl)trimethylammonium salt (also referred to as "choline").
  • triethyl(2-hydroxyethyl)ammonium salt diethylbis(2-hydroxyethyl)ammonium salt, ethyltris(2-hydroxyethyl)ammonium salt, and tris(2-hydroxyethyl)methylammonium salt.
  • quaternary ammonium salts include tetramethylammonium salt, tetraethylammonium salt, tetrabutylammonium salt, ethyltrimethylammonium salt, triethylmethylammonium salt, diethyldimethylammonium salt, tributylmethylammonium salt, and dimethyldipropylammonium salt.
  • benzyltrimethylammonium salt benzyltriethylammonium salt, (2-hydroxyethyl)trimethylammonium salt, and triethyl(2-hydroxyethyl)ammonium salt.
  • the anion contained in the above salt is preferably F ⁇ , Cl ⁇ , Br ⁇ or OH ⁇ , more preferably Cl ⁇ or OH ⁇ , and even more preferably OH ⁇ .
  • the molecular weight of the quaternary ammonium salt is preferably 90 to 1000, more preferably 90 to 500, even more preferably 90 to 300, particularly preferably 90 to 200.
  • One type of quaternary ammonium salt may be used, or two or more types may be used in combination.
  • the total content of the quaternary ammonium salt is preferably 0.01 to 10.00% by mass, more preferably 0.10 to 3.50% by mass, and 0.30 to 3% by mass based on the total mass of the composition. 0.00% by weight is more preferable, and 0.50 to 2.00% by weight is particularly preferable.
  • the composition of the present invention contains at least one ionic surfactant selected from the group consisting of anionic surfactants, cationic surfactants, and amphoteric surfactants.
  • the composition of the present invention preferably contains an anionic surfactant.
  • An ionic surfactant is a compound that has a surface-active function by having a hydrophilic group and a hydrophobic group that exhibit ionicity, and is different from the above-mentioned quaternary ammonium salt in this point.
  • the above-mentioned ionic surfactants often have a hydrocarbon group as a hydrophobic group, and more specifically, an aliphatic hydrocarbon group (preferably a linear alkyl group or a branched alkyl group). It often has a hydrophobic group selected from a hydrocarbon group), an aromatic hydrocarbon group, and a combination thereof.
  • the ionic surfactant has a hydrocarbon group
  • the number of carbon atoms in the hydrocarbon group is preferably 3 or more, more preferably 8 or more, and even more preferably 12 or more.
  • the upper limit is not particularly limited, but is preferably 20 or less.
  • the molecular weight of the ionic surfactant is preferably 100 to 1000, more preferably 100 to 500.
  • the anionic surfactant examples include sulfonic acid surfactants, phosphate ester surfactants, phosphonic acid surfactants, and carboxylic acid surfactants.
  • the anionic surfactant preferably has at least one of a sulfonic acid group and a phosphoric acid group as the hydrophilic group, and more preferably has a sulfonic acid group.
  • the anionic surfactant is a linear or branched alkyl group, or one hydrogen atom in an aryl group (more preferably a phenyl group) is replaced with the above linear or branched alkyl group. It is preferable to have a substituted group (aralkyl group).
  • the number of carbon atoms in the linear or branched alkyl group and the aralkyl group is preferably 3 to 25, more preferably 8 to 20, and further preferably 12 to 18. preferable.
  • the anionic surfactant has a cyclic structure. Examples of the above-mentioned cyclic structure include aromatic rings, and among these, a benzene ring or a naphthalene ring is preferred.
  • a sulfonic acid surfactant is a surfactant that contains a sulfonic acid group as a hydrophilic group among a hydrophobic group and a hydrophilic group that a surfactant molecule has.
  • the hydrophobic group in the sulfonic acid surfactant is not particularly limited, and includes, for example, an aliphatic hydrocarbon group, an aromatic hydrocarbon group, and a combination thereof.
  • the number of carbon atoms in the hydrophobic group is preferably 6 or more, more preferably 10 or more.
  • the upper limit of the number of carbon atoms in the hydrophobic group is not particularly limited, but is preferably 24 or less, more preferably 20 or less.
  • sulfonic acid surfactants examples include alkyl sulfonic acid surfactants, alkylaryl sulfonic acid surfactants (e.g., alkylbenzenesulfonic acids and alkylnaphthalene sulfonic acids), and alkyldiphenyl ether disulfonic acid surfactants. , polyoxyalkylene alkyl ether sulfonic acid surfactants, polyoxyethylene alkyl sulfate ester surfactants, and salts thereof.
  • salts of sulfonic acid surfactants include sodium salts, potassium salts, ammonium salts, and organic amine salts.
  • sulfonic acid surfactants include hexane sulfonic acid, octanesulfonic acid, decanesulfonic acid, dodecylsulfonic acid, toluenesulfonic acid, cumenesulfonic acid, (para)octylbenzenesulfonic acid, dodecylbenzenesulfonic acid (( S) DBS), branched dodecylbenzenesulfonic acid, monoisopropylnaphthalenesulfonic acid, dioctylsulfosuccinate, naphthalenesulfonic acid dinitrobenzenesulfonic acid (DNBSA), and lauryl dodecyl phenyl ether disulfonic acid (LDPEDSA), and salts thereof can be mentioned.
  • alkylarylsulfonic acid surfactants are preferred. That is, a sulfonic acid surfactant in which the surfactant molecule has an alkyl group and a sulfonic acid group and the surfactant molecule contains an aromatic hydrocarbon ring in the molecule is preferable.
  • the alkyl group possessed by the alkylarylsulfonic acid surfactant may be either linear or branched, with branched being preferred.
  • the number of carbon atoms in the alkyl group is preferably 8 or more, more preferably 8 to 20, and even more preferably 10 to 13.
  • Examples of the aromatic hydrocarbon ring contained in the alkylarylsulfonic acid surfactant include a benzene ring and a naphthalene ring.
  • the sulfonic acid group possessed by the alkylarylsulfonic acid surfactant is preferably directly bonded to the aromatic hydrocarbon ring.
  • the sulfonic acid group may form a salt with a cation.
  • R a -Ar a -SO 3 H R a represents an alkyl group having 8 or more carbon atoms.
  • Ar a represents an arylene group. Preferred embodiments of the alkyl group are as described above.
  • the above arylene group may be monocyclic or polycyclic.
  • the number of carbon atoms in the arylene group is preferably 6 to 20, more preferably 6 to 15.
  • a phenylene group or a naphthylene group is preferable.
  • alkylbenzenesulfonic acid surfactants such as DBS are preferred. That is, a sulfonic acid surfactant in which the surfactant molecule has an alkyl group and a sulfonic acid group and includes at least one benzene ring in the molecule is preferred.
  • the alkylbenzenesulfonic acid surfactant is also referred to as "ABS".
  • the alkyl group that ABS has is preferably linear or branched, more preferably branched.
  • the number of carbon atoms in the alkyl group of ABS is preferably 8 or more, more preferably 8 to 20, and even more preferably 10 to 13. Examples of ABS include an embodiment in which Ar a in formula (A) is a phenylene group.
  • ABS examples include octylbenzenesulfonic acid, nonylbenzenesulfonic acid, decylbenzenesulfonic acid, undecylbenzenesulfonic acid, dodecylbenzenesulfonic acid, tridecylbenzenesulfonic acid, tetradecylbenzenesulfonic acid, pentadecylbenzenesulfonic acid, Hexadecanebenzenesulfonic acid, heptadecanbenzenesulfonic acid, octadecanebenzenesulfonic acid, nonadecanenbenzenesulfonic acid, eicosylbenzenesulfonic acid, decyldiphenyloxide disulfonic acid, undecyldiphenyloxide disulfonic acid, dodecyldiphenyloxide disulfonic acid, and Includes decyl diphenyl oxide disulfonic acid
  • the sulfonic acid surfactant is an alkylbenzenesulfonic acid surfactant 1 (hereinafter also referred to as "ABS1”) containing an alkyl group having 10 carbon atoms and an alkylbenzenesulfonic acid surfactant containing an alkyl group having 11 carbon atoms.
  • Active agent 2 hereinafter also referred to as "ABS2”
  • alkylbenzenesulfonic acid-based surfactant 3 hereinafter also referred to as "ABS3" containing an alkyl group having 12 carbon atoms, and an alkyl group having 13 carbon atoms.
  • ABS1 alkylbenzenesulfonic acid surfactant 4
  • ABS2 examples include an embodiment in which Ar a in formula (A) is a phenylene group and R a is an alkyl group having 11 carbon atoms.
  • ABS3 examples include an embodiment in which Ar a in formula (A) is a phenylene group and R a is an alkyl group having 12 carbon atoms.
  • ABS4 examples include an embodiment in which Ar a in formula (A) is a phenylene group and R a is an alkyl group having 13 carbon atoms.
  • the content of ABS1 relative to the total mass of ABS1 to ABS4 is not particularly limited, but is preferably 5 to 50% by mass.
  • the content of ABS2 relative to the total mass of ABS1 to ABS4 is not particularly limited, but is preferably 20 to 50% by mass.
  • the content of ABS3 relative to the total mass of ABS1 to ABS4 is not particularly limited, but is preferably 20 to 50% by mass.
  • the content of ABS4 relative to the total mass of ABS1 to ABS4 is not particularly limited, but is preferably 20 to 50% by mass.
  • phosphate ester surfactant examples include phosphate esters (alkyl phosphates and aryl phosphates), mono- or polyoxyalkylene ether phosphates (mono- or polyoxyalkylene alkyl ether phosphates, and , mono- or polyoxyalkylene arylether phosphate esters), and salts thereof. Among these, at least one selected from the group consisting of alkyl phosphates, mono- or polyoxyalkylene alkyl ether phosphates, and salts thereof is preferred.
  • the salts of phosphate ester surfactants include sodium salts, potassium salts, ammonium salts, and organic amine salts.
  • Examples of the monovalent alkyl group possessed by the alkyl phosphate ester and the mono- or polyoxyalkylene alkyl ether phosphate include an alkyl group having 6 to 22 carbon atoms, and preferably an alkyl group having 10 to 20 carbon atoms.
  • the monovalent aryl group possessed by the aryl phosphate ester and the mono- or polyoxyalkylene arylether phosphate ester includes, for example, an aryl group having 6 to 14 carbon atoms which may have an alkyl group; A phenyl group which may be substituted is preferred.
  • the divalent alkylene group possessed by the mono- or polyoxyalkylene alkyl ether phosphate ester and the mono- or polyoxyalkylene aryl ether phosphate ester includes, for example, an alkylene group having 2 to 6 carbon atoms, and an ethylene group or a propylene group. is preferred, and ethylene group is more preferred. Further, the repeating number of the oxyalkylene group is preferably 1 to 12, more preferably 1 to 10.
  • More specific phosphate ester surfactants include octyl phosphate, lauryl phosphate, tridecyl phosphate, myristyl phosphate, cetyl phosphate, stearyl phosphate, mono- or polyoxyethylene octyl ether phosphate. Examples include acid esters, mono- or polyoxyethylene lauryl ether phosphates, mono- or polyoxyethylene tridecyl ether phosphates, and salts thereof. Further, as the phosphate ester surfactant, compounds described in paragraphs [0012] to [0019] of JP-A No. 2011-040502 can also be used, and the contents thereof are incorporated into the present specification.
  • the ionic surfactant may be a cationic surfactant.
  • the cationic surfactant preferably has a benzyl group or a linear or branched alkyl group as a hydrophobic group, and preferably has a benzyl group or a linear alkyl group having 11 to 20 carbon atoms. is more preferable.
  • cationic surfactants include primary to tertiary alkylamine salts (e.g., monostearylammonium chloride, distearylammonium chloride, tristearylammonium chloride, etc.), quaternary ammonium salts (e.g., lauryltrimethylammonium chloride, lauryldimethylbenzylammonium chloride, etc.), and modified aliphatic polyamines (eg, polyethylene polyamine, etc.).
  • primary to tertiary alkylamine salts e.g., monostearylammonium chloride, distearylammonium chloride, tristearylammonium chloride, etc.
  • quaternary ammonium salts e.g., lauryltrimethylammonium chloride, lauryldimethylbenzylammonium chloride, etc.
  • modified aliphatic polyamines eg, polyethylene polyamine, etc.
  • the ionic surfactant may be an amphoteric surfactant.
  • amphoteric surfactants include carboxybetaines (e.g., alkyl-N,N-dimethylaminoacetic acid betaines, alkylpolyaminoethylglycine hydrochloride, laurylbetaine, and alkyl-N,N-dihydroxyethylaminoacetic acid betaines), Sulfobetaines (e.g., alkyl-N,N-dimethylsulfoethylene ammonium betaines, etc.), alkylamine oxides (e.g., lauryldimethylamine oxide), and imidazolinium betaines (e.g., 2-alkyl-N-carboxymethyl-N -hydroxyethylimidasolinium betaine, etc.).
  • carboxybetaines e.g., alkyl-N,N-dimethylaminoacetic acid betaines, alkylpol
  • the content of the ionic surfactant is preferably 1 to 15,000 mass ppm, more preferably 1 to 10,000 mass ppm, even more preferably 10 to 5,000 mass ppm, and even more preferably 100 to 1,000 mass ppm, based on the total mass of the composition. is particularly preferred.
  • the composition of the present invention includes a nonionic surfactant.
  • a nonionic surfactant is a compound that has a surface-active function by having a hydrophilic group and a hydrophobic group that do not exhibit ionicity, unlike the above-mentioned ionic surfactants.
  • Examples of the hydrophilic group include polyoxyalkylene chains.
  • the nonionic surfactant preferably has a polyoxyalkylene chain composed of an oxyalkylene group selected from the group consisting of an oxyethylene group and an oxypropylene group, and a polyoxyethylene chain or a polyoxypropylene group as a hydrophilic group. It is more preferable to have a chain.
  • the oxyethylene group is a group represented by -CH 2 -CH 2 -O-
  • the polyoxypropylene group is, for example, a group represented by -CH 2 -CH(CH 3 )-O-.
  • the number of repeating units of the oxyalkylene group (-alkylene group-O-) in the polyoxyalkylene chain is preferably 3 to 50, more preferably 4 to 30, and even more preferably 6 to 20.
  • examples of the hydrophobic group include a monovalent hydrocarbon group.
  • the monovalent hydrocarbon group is preferably a monovalent aliphatic hydrocarbon group or an aryl group which may have a substituent, and is preferably a linear or branched alkyl group or a linear An aryl group having a branched or branched alkyl group is more preferred.
  • the nonionic surfactant preferably has a monovalent hydrocarbon group having 10 to 18 carbon atoms as a hydrophobic group, and more preferably has a monovalent hydrocarbon group having 12 to 18 carbon atoms. preferable.
  • nonionic surfactants include polyoxyalkylene alkyl ethers (for example, polyoxyethylene alkyl ethers and polyoxyethylene polyoxypropylene alkyl ethers), polyoxyalkylene alkylaryl ethers (for example, polyoxyalkylene alkyl ethers), ), polyoxyethylene polystyrylphenyl ether, fatty acid ester (e.g., glycerin fatty acid ester, sorbitan fatty acid ester, pentaerythritol fatty acid ester, propylene glycol monofatty acid ester, sucrose fatty acid ester, polyoxy Examples include ethylene sorbitan fatty acid ester, polyoxyethylene sorbitol fatty acid ester, polyethylene glycol fatty acid ester, polyglycerin fatty acid ester, polyoxyethylene glycerin fatty acid ester, and triethanolamine fatty acid ester), polyoxyethylated castor oil-based compounds , fatty acid diethanolamide
  • the fatty acid ester may be a partially esterified fatty acid partial ester.
  • nonionic surfactants polyoxyalkylene alkyl ether, polyoxyalkylene alkylaryl ether, or fatty acid ester is preferable.
  • R-L 1 -(L 2 O) n -H a compound represented by the following general formula (b) is preferable.
  • R-L 1 -(L 2 O) n -H General formula (b)
  • R represents an alkyl group.
  • L 1 represents a single bond, an oxygen atom, or an alkylene group that may have an oxygen atom.
  • L 2 represents an alkylene group having 2 or 3 carbon atoms, and a plurality of L 2 may be the same or different.
  • n represents a number of 2 or more.
  • the number of carbon atoms in the alkyl group represented by R is preferably 5 to 25, more preferably 8 to 20, and even more preferably 10 to 18.
  • the alkyl group may be linear or branched.
  • the alkylene group optionally having an oxygen atom represented by L 1 preferably has 1 to 20 carbon atoms, more preferably 1 to 10 carbon atoms, and even more preferably 1 to 5 carbon atoms.
  • n is preferably 3 to 50, more preferably 4 to 30, even more preferably 6 to 20.
  • Examples of the alkylene group which may have an oxygen atom include -O-CH 2 -CH 2 - and -O-CH 2 -CH 2 -CH 2 -.
  • R a represents an alkyl group.
  • Ar represents an arylene group.
  • L 1a represents a single bond, an oxygen atom, or an alkylene group that may have an oxygen atom.
  • L 2a represents an alkylene group having 2 or 3 carbon atoms, and a plurality of L 2a may be the same or different.
  • m represents a number of 2 or more.
  • R a preferred embodiments of R a are the same as the preferred embodiments of R above.
  • the arylene group represented by Ar above is preferably a phenylene group.
  • Preferred embodiments of the alkylene group optionally having an oxygen atom represented by L 1a are the same as the preferred embodiments of L 1 above.
  • m is preferably 3 to 50, more preferably 4 to 30, even more preferably 6 to 20.
  • the HLB (Hydrophile-Lipophile Balance) value of the nonionic surfactant is preferably 9.0 to 20.0, more preferably 11.0 to 18.0.
  • the content of the nonionic surfactant is preferably 1 to 15,000 ppm by mass, more preferably 1 to 10,000 ppm by mass, even more preferably 10 to 5,000 ppm by mass, and even more preferably 100 to 1,000 ppm by mass, based on the total mass of the composition. is particularly preferred. Further, the mass ratio of the content of nonionic surfactant to the content of ionic surfactant is preferably 0.1 to 100, more preferably 1 to 10.
  • composition may contain optional components in addition to the components described above.
  • Optional components that the composition may contain will be described in detail below.
  • the composition of the present invention may contain a solvent.
  • the solvent include water and organic solvents, with water being preferred.
  • the water is preferably purified water such as distilled water, ion-exchanged water, or ultrapure water, and more preferably ultrapure water used in semiconductor manufacturing.
  • the water contained in the composition may contain unavoidable minor admixture components.
  • the content of water is preferably 50% by mass or more, more preferably 65% by mass or more, and even more preferably 75% by mass or more, based on the total mass of the composition.
  • the upper limit is not particularly limited, and is preferably 99.999% by mass or less, more preferably 99.9% by mass or less, based on the total mass of the composition.
  • a water-soluble organic solvent refers to an organic solvent that can be mixed with water in any proportion.
  • water-soluble organic solvents include ether solvents, alcohol solvents, ketone solvents, amide solvents, sulfur-containing solvents, and lactone solvents.
  • ether solvents include diethyl ether, diisopropyl ether, dibutyl ether, t-butyl methyl ether, cyclohexyl methyl ether, tetrahydrofuran, diethylene glycol, dipropylene glycol, triethylene glycol, polyethylene glycol, alkylene glycol monoalkyl ether (ethylene glycol Monomethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, diethylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether), alkylene glycol dialkyl ether (diethylene glycol diethyl ether, diethylene glycol dipropyl) ether, diethylene glycol dibutyl ether, triethylene glycol diethyl ether, tetraethylene glycol dimethyl ether, tetraethylene glycol die
  • alcoholic solvents include methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, ethylene glycol, propylene glycol, glycerin, 1,6-hexanediol, cyclohexanediol, sorbitol, xylitol, Examples include 2-methyl-2,4-pentanediol, 1,3-butanediol, and 1,4-butanediol.
  • the number of carbon atoms in the alcohol solvent is preferably 1 to 8, more preferably 1 to 4.
  • amide solvent examples include formamide, monomethylformamide, dimethylformamide, acetamide, monomethylacetamide, dimethylacetamide, monoethylacetamide, diethylacetamide, and N-methylpyrrolidone.
  • ketone solvents include acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone.
  • sulfur-containing solvent examples include dimethylsulfone, dimethylsulfoxide, and sulfolane.
  • lactone solvent examples include ⁇ -butyrolactone and ⁇ -valerolactone.
  • One type of organic solvent may be used alone, or two or more types may be used in combination.
  • the content of the organic solvent is preferably 0.1 to 10% by weight based on the total weight of the composition. Even when two or more types of organic solvents are used, it is preferable that the total content of the two or more types of organic solvents is within the above range.
  • the composition may also include a basic compound.
  • a basic compound is a compound that exhibits alkalinity (pH greater than 7.0) in an aqueous solution.
  • Examples of the basic compound include organic bases, inorganic bases, and salts thereof. However, the basic compound does not include the above-mentioned quaternary ammonium salt, ionic surfactant, and solvent.
  • Examples of the organic base include amine compounds, alkanolamine compounds and salts thereof, amine oxide compounds, nitro compounds, nitroso compounds, oxime compounds, ketooxime compounds, aldoxime compounds, lactam compounds, and isocyanide compounds.
  • the amine compound is a compound having an amino group in the molecule, and is intended to be a compound that is not included in the above-mentioned alkanolamines, amine oxide compounds, and lactam compounds.
  • the organic base does not include the quaternary ammonium salt.
  • Examples of the inorganic base include alkali metal hydroxides such as sodium hydroxide and potassium hydroxide, alkaline earth metal hydroxides, and ammonia or its salts.
  • the content of the basic compound is not particularly limited, but is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, based on the total mass of the composition.
  • the upper limit is not particularly limited, but is preferably 20.0% by mass or less based on the total mass of the composition. It is also preferable that the basic compound be adjusted within the above-mentioned preferred range so as to have a suitable pH range for the composition described below.
  • the composition may also include acidic compounds.
  • An acidic compound is an acidic compound that exhibits acidity (pH less than 7.0) in an aqueous solution. However, the acidic compound does not include the periodic acid or its salt. Examples of acidic compounds include inorganic acids, organic acids, and salts thereof.
  • inorganic acids include sulfuric acid, hydrochloric acid, phosphoric acid, nitric acid, hydrofluoric acid, iodic acid, perchloric acid, hypochlorous acid, and salts thereof.
  • organic acids include carboxylic acids, sulfonic acids, and salts thereof.
  • the content of the acidic compound is not particularly limited, but is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, based on the total mass of the composition.
  • the upper limit is not particularly limited, it is preferably 20.0% by mass or less based on the total mass of the composition. It is also preferable that the acidic compound is adjusted within the above-mentioned preferred range so as to have a suitable pH range for the composition described below.
  • the composition of the present invention may contain a water-soluble polymer.
  • a water-soluble polymer examples include polyacrylic acid, polyvinyl alcohol, polyethylene glycol, polyethylene oxide, and carboxyvinyl polymer.
  • the composition may also include a metal corrosion inhibitor.
  • a metal corrosion inhibitor containing a nitrogen atom is preferable. Examples include chelating agents, which will be described in detail later.
  • -Chelating agent- Chelating agents have at least two nitrogen-containing groups.
  • the nitrogen-containing group include a primary amino group, a secondary amino group, an imidazolyl group, a triazolyl group, a benzotriazolyl group, a piperazinyl group, a pyrrolyl group, a pyrrolidinyl group, a pyrazolyl group, a piperidinyl group, a guanidinyl group, Examples include biguanidinyl group, carbazatyl group, hydrazidyl group, semicarbazidyl group, and aminoguanidinyl group.
  • the chelating agent only needs to have two or more nitrogen-containing groups, and the two or more nitrogen-containing groups may be different, partially the same, or all the same. Moreover, the chelating agent may contain a carboxy group. The nitrogen-containing group and/or carboxy group that the chelating agent has may be neutralized to form a salt.
  • the chelating agents described in paragraphs [0021] to [0047] of Japanese Translation of PCT Publication No. 2017-504190 can be used, the contents of which are incorporated herein.
  • One type of chelating agent may be used alone, or two or more types may be used in combination.
  • the content of the chelating agent is preferably 0.01 to 2% by mass, more preferably 0.1 to 1.5% by mass, and further preferably 0.3 to 1.0% by mass, based on the total mass of the composition. preferable.
  • the metal corrosion inhibitor may be a benzotriazole which may have a substituent.
  • benzotriazole contained in the above chelating agent is excluded.
  • examples of the benzotriazole that may have a substituent include benzotriazole (BTA), 5-aminotetrazole, 1-hydroxybenzotriazole, 5-phenylthiol-benzotriazole, 5-chlorobenzotriazole, 4-chlorobenzotriazole , 5-bromobenzotriazole, 4-bromobenzotriazole, 5-fluorobenzotriazole, 4-fluorobenzotriazole, naphthotriazole, tolyltriazole, 5-phenyl-benzotriazole, 5-nitrobenzotriazole, 4-nitrobenzotriazole, 3-amino-5-mercapto-1,2,4-triazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-benzotriazole, 5-methyl
  • the content of the metal corrosion inhibitor is not particularly limited, but is preferably 0.1% by mass or more, more preferably 1% by mass or more, based on the total mass of the composition.
  • the upper limit is not particularly limited, but is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the composition.
  • the composition may include a metal component.
  • Metal components include metal particles and metal ions.
  • the content of metal components refers to the total content of metal particles and metal ions.
  • the composition may contain either metal particles or metal ions, or both.
  • metal atoms contained in the metal component include Ag, Al, As, Au, Ba, Ca, Cd, Co, Cr, Cu, Fe, Ga, Ge, K, Li, Mg, Mn, Mo, and Na. , Ni, Pb, Sn, Sr, Ti, Zn, and Zr.
  • the metal component may contain one type of metal atom, or may contain two or more types of metal atoms.
  • the metal particles may be a single substance or an alloy, and may exist in a form in which metal is associated with an organic substance.
  • the metal component may be a metal component that is unavoidably contained in each component (raw material) contained in the composition, or a metal component that is unavoidably contained during the production, storage, and/or transportation of the composition.
  • the content of the metal component is often 0.01 mass ppt to 10 mass ppm, preferably 0.1 mass ppt to 1 mass ppm, based on the total mass of the composition. , more preferably 0.1 mass ppt to 100 mass ppb.
  • the type and content of the metal component in the composition can be measured by ICP-MS (Single Nano Particle Mass Spectrometry) method.
  • ICP-MS Single Nano Particle Mass Spectrometry
  • the content of the metal component to be measured is measured regardless of its existing form. Therefore, the total mass of the metal particles and metal ions to be measured is determined as the content of the metal component.
  • Agilent Technologies' Agilent 8800 triple quadrupole ICP-MS (inductively coupled plasma mass spectrometry, for semiconductor analysis, option #200), Agilent 8900, and PerkinE are used.
  • lmer company NexION 350S manufactured by Manufacturer can be used.
  • the method for adjusting the content of each metal component in the composition is not particularly limited.
  • the content of metal components in the composition can be reduced by performing a known treatment for removing metals from the composition and/or from raw materials containing each component used to prepare the composition.
  • the content of the metal component in the composition can be increased.
  • composition The chemical and physical properties of the composition will be explained below.
  • the pH of the composition of the present invention is not particularly limited, and may be within the range of 1.0 to 14.0, for example.
  • the pH of the composition is preferably 1.0 to 12.0, more preferably 3.0 to 10.0, and even more preferably 4.0 to 9.0.
  • the pH of the composition is a value obtained by measuring at 25° C. using a pH meter (manufactured by Horiba, Ltd., F-51 (trade name)).
  • the composition may contain coarse particles, the content thereof is preferably low.
  • coarse particles refers to particles whose diameter (particle size) is 0.1 ⁇ m or more when the shape of the particles is considered to be spherical.
  • the composition is substantially free of coarse particles.
  • substantially free of coarse particles means that the content of particles with a particle size of 0.1 ⁇ m or more is 10,000 or less per mL of the composition, preferably 5,000 or less.
  • the lower limit is preferably 0 or more, more preferably 0.01 or more per mL of the composition.
  • Coarse particles contained in the composition include particles such as dust, dust, organic solids, and inorganic solids contained as impurities in raw materials, as well as dust, dirt, and organic solids introduced as contaminants during the preparation of the composition. and particles such as inorganic solids, which ultimately exist as insoluble particles without being dissolved in the composition.
  • the content of coarse particles present in the composition can be measured in the liquid phase using a commercially available measuring device using a light scattering particle-in-liquid measuring method using a laser as a light source. Examples of methods for removing coarse particles include purification treatment such as filtering, which will be described later.
  • the method for producing the composition of the present invention is not particularly limited, and can be produced, for example, by mixing the above-mentioned components.
  • the order or timing of mixing each component, as well as the order and timing, are not particularly limited.
  • periodic acid or its salt, a quaternary ammonium salt, an ionic surfactant, a nonionic surfactant, and any optional ingredients were sequentially added to a stirrer such as a mixing mixer containing purified pure water. Thereafter, the components may be mixed by thorough stirring to produce a composition.
  • Methods for producing the composition include a method in which the pH of the cleaning solution is adjusted in advance using the above-mentioned basic compound or acidic compound, and then each component is mixed; Another example is a method of adjusting the pH to a set value.
  • compositions of the invention may be prepared.
  • the composition of the present invention may be manufactured by diluting the concentrate with a diluent and then adjusting the pH to a set value using the basic compound or acidic compound.
  • a predetermined amount of the diluent may be added to the concentrate, or a predetermined amount of the concentrate may be added to the diluted liquid.
  • the above manufacturing method may include a metal removal step of removing metal components from the above components and/or composition (hereinafter also referred to as "product to be purified").
  • a metal removal step of removing metal components from the above components and/or composition
  • the metal removal step is performed on the product to be purified containing the periodic acid or its salt and water.
  • the metal removal step includes a step P in which the product to be purified is subjected to an ion exchange method.
  • step P the above-mentioned product to be purified is subjected to an ion exchange method.
  • the ion exchange method is not particularly limited as long as it is a method that can adjust (reduce) the amount of metal components in the product to be purified, but the ion exchange method includes one or more of the following methods P1 to P3. It is preferable.
  • the ion exchange method more preferably includes two or more of Methods P1 to P3, and even more preferably includes all of Methods P1 to P3. Note that when the ion exchange method includes all of Methods P1 to P3, the order of implementation is not particularly limited, but it is preferable to perform them in the order of Methods P1 to P3.
  • Method P1 A method of passing the product to be purified through a first filling section filled with a mixed resin containing two or more resins selected from the group consisting of a cation exchange resin, an anion exchange resin, and a chelate resin.
  • the first filling section usually includes a container and a mixed resin containing two or more resins selected from the group consisting of a cation exchange resin, an anion exchange resin, and a chelate resin, which is filled in the container.
  • Method P2 Covering at least one of the second filling part filled with a cation exchange resin, the third filling part filled with an anion exchange resin, and the fourth filling part filled with a chelate resin. A method of passing purified products through liquid.
  • the second filling section usually includes a container and the above-mentioned cation exchange resin filled in the container
  • the third filling section usually includes a container and the above-mentioned anion exchange resin filled in the container.
  • the fourth filling part usually includes a container and a chelate resin, which will be described next, filled in the container.
  • the forms of the ion exchange resin and chelate resin used in the above method include, for example, granular, fibrous, and porous monolithic forms, with granular or fibrous forms being preferred.
  • the average particle size of the granular ion exchange resin and chelate resin is preferably 10 to 2000 ⁇ m, more preferably 100 to 1000 ⁇ m.
  • the particle size distribution of the particulate ion exchange resin and chelate resin it is preferable that the presence rate of resin particles in the range of ⁇ 200 ⁇ m of the average particle size is 90% or more.
  • the above-mentioned average particle size and particle size distribution can be measured, for example, by using a particle size distribution measuring device (Microtrac HRA3920, manufactured by Nikkiso Co., Ltd.) using water as a dispersion medium.
  • the above manufacturing method preferably includes a filtration step of filtering the liquid in order to remove foreign substances, coarse particles, etc. from the liquid.
  • the filtration method is not particularly limited, and any known filtration method can be used. Among these, filtering using a filter is preferable. When using filters, different filters may be combined.
  • the filter used for filtering can be used without any particular restriction as long as it has been conventionally used for filtration purposes.
  • materials constituting the filter include fluorine resins such as PTFE (polytetrafluoroethylene), polyamide resins such as nylon, and polyolefin resins (including high density and ultra-high molecular weight) such as polyethylene and polypropylene (PP). , polyarylsulfone, and the like.
  • PTFE polytetrafluoroethylene
  • polyamide resins such as nylon
  • polyolefin resins including high density and ultra-high molecular weight
  • PP polypropylene
  • polyarylsulfone polyarylsulfone
  • polyamide resin, PTFE, polypropylene (including high-density polypropylene), or polyarylsulfone are preferred.
  • the pore diameter of the filter is preferably about 0.001 to 1.0 ⁇ m, more preferably about 0.02 to 0.5 ⁇ m, and even more preferably about 0.01 to 0.1 ⁇ m.
  • the upper limit of the temperature during filtering is preferably at most room temperature (25°C), more preferably at most 23°C, even more preferably at most 20°C.
  • the lower limit of the temperature during filtering is preferably 0°C or higher, more preferably 5°C or higher, and even more preferably 10°C or higher. Filtering can remove particulate foreign matter and/or impurities, but filtering is more efficient when performed at the above temperature because the amount of particulate foreign matter and/or impurities dissolved in the composition is reduced. It is carried out according to
  • the method for producing the composition may further include a static elimination step of neutralizing the composition.
  • a container for accommodating the composition for example, a known container can be used. It is preferable that the container has a high degree of cleanliness within the container for semiconductor applications and has a low elution of impurities.
  • containers include the "Clean Bottle” series (manufactured by Aicello Chemical Co., Ltd.) and the “Pure Bottle” (manufactured by Kodama Resin Industries).
  • the inner wall of the container may have a 6-layer structure made of 6 types of resin, or a 7-layer structure made of 7 types of resin. It is also preferred to use multilayer containers. Examples of the multilayer container include the container described in JP-A No. 2015-123351, the contents of which are incorporated herein.
  • the inside of the container is cleaned before filling with the composition.
  • the liquid used for cleaning can be appropriately selected depending on the purpose, and preferably a liquid containing the composition or at least one of the components added to the composition.
  • the inside of the container may be replaced with an inert gas (for example, nitrogen and argon) having a purity of 99.99995% by volume or more. Particularly preferred is a gas with a low water content.
  • an inert gas for example, nitrogen and argon
  • the container containing the composition may be transported and stored at room temperature or under temperature control. Among these, it is preferable to control the temperature within the range of -20 to 20°C in order to prevent deterioration.
  • composition of the present invention can be applied to various uses, and can be particularly suitably used for treating objects containing Ru.
  • workpiece a method for treating a workpiece containing Ru (hereinafter also simply referred to as "workpiece") using the composition of the present invention will be described.
  • workpiece a workpiece containing Ru (hereinafter also simply referred to as "workpiece") using the composition of the present invention.
  • the object to be processed contains ruthenium (Ru).
  • Ru in the object to be processed is preferably present on the substrate.
  • Ru in the object to be treated may exist as a simple substance of Ru, or as a compound containing Ru and other atoms (including an alloy containing Ru).
  • simple Ru and compounds containing Ru and other atoms are also collectively referred to as Ru-containing substances.
  • the Ru-containing material is a component containing Ru. Note that "on the substrate" in this specification includes, for example, the front and back surfaces of the substrate, the side surfaces, and inside the grooves.
  • the Ru-containing material on the substrate includes not only the case where the Ru-containing material exists directly on the surface of the substrate, but also the case where the Ru-containing material exists on the substrate via another layer.
  • recesses provided in the substrate such as grooves and holes, will also be referred to as "grooves, etc.”.
  • the presence of a Ru-containing substance in the object to be treated refers to a state in which the Ru-containing substance can come into contact with the composition when the object to be treated and the composition are brought into contact.
  • the contactable state is not limited to the state in which the Ru-containing material is exposed to the outside, but also the state in which the member covering the Ru-containing material is removed by some action and the Ru-containing material is exposed. include.
  • a semiconductor substrate is preferred.
  • the substrate include semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, and magneto-optical disks.
  • a substrate for Materials constituting the semiconductor substrate include silicon, germanium, silicon germanium, Group III-V compounds such as GaAs, and combinations thereof.
  • DRAM Dynamic Random Access Memory
  • FRAM Frequency Random Access Memory
  • MRAM Magnetic netoresistive Random Access Memory
  • PRAM Phase Change Random Access Memory
  • the Ru-containing substance is not particularly limited as long as it contains Ru (Ru atoms), and includes, for example, simple Ru, alloys containing Ru, Ru oxides, Ru nitrides, and Ru oxynitrides. .
  • the Ru oxide, Ru nitride, and Ru oxynitride may be a composite oxide, a composite nitride, and a composite oxynitride containing Ru.
  • the content of Ru atoms in the Ru-containing material is preferably 10% by mass or more, more preferably 30% by mass or more, even more preferably 50% by mass or more, and 90% by mass or more, based on the total mass of the Ru-containing material. Particularly preferred.
  • the upper limit is not particularly limited, and is preferably 100% by mass or less based on the total mass of the Ru-containing material.
  • the Ru-containing material may also contain other transition metals.
  • transition metals include Rh (rhodium), Ti (titanium), Ta (tantalum), Co (cobalt), Cr (chromium), Hf (hafnium), Os (osmium), Pt (platinum), and Ni (nickel). ), Mn (manganese), Cu (copper), Zr (zirconium), Mo (molybdenum), La (lanthanum), and Ir (iridium).
  • the form of the Ru-containing material on the substrate is not particularly limited, and may be, for example, in the form of a film, a wire, a plate, a column, or arranged in the form of particles, but the composition of the present invention
  • the material can be preferably used for a processed object in which Ru is disposed at the edge (bevel) of the substrate.
  • the Ru-containing material is arranged in the form of particles, for example, as described later, after performing dry etching on the substrate on which the Ru-containing film is disposed, the particulate Ru-containing material is left as a residue.
  • a substrate to which particulate Ru-containing substances are attached as a residue, and the Ru-containing film An example of a substrate is a substrate in which particulate Ru-containing substances are attached to areas other than the area where the Ru-containing film is to be formed after being deposited on the substrate.
  • the thickness of the Ru-containing film is not particularly limited and may be appropriately selected depending on the application.
  • the thickness is preferably 200 nm or less, more preferably 100 nm or less, and even more preferably 50 nm or less.
  • the lower limit is not particularly limited, and is preferably 0.1 nm or more.
  • the Ru-containing film may be disposed only on one main surface of the substrate, may be disposed on both main surfaces, or may be disposed on the edge of the substrate. Further, the Ru-containing film may be disposed on the entire main surface of the substrate, or may be disposed on a part of the main surface of the substrate.
  • the object to be processed may include various layers or structures as desired in addition to the Ru-containing material.
  • one or more members selected from the group consisting of a metal wiring, a gate electrode, a source electrode, a drain electrode, an insulating film, a ferromagnetic layer, a nonmagnetic layer, etc. are arranged on the substrate. good.
  • the substrate may include exposed integrated circuit structures. Integrated circuit structures include, for example, interconnect features such as metal wiring and dielectric materials. Metals and alloys used in interconnect mechanisms include, for example, aluminum, copper-aluminum alloys, copper, titanium, tantalum, cobalt, silicon, titanium nitride, tantalum nitride, and molybdenum.
  • the substrate may include a layer of one or more materials selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, and carbon-doped silicon oxide.
  • the size, thickness, shape, layer structure, etc. of the substrate are not particularly limited and can be appropriately selected as desired.
  • the method for manufacturing the object to be processed is not particularly limited, and any known manufacturing method may be used, such as sputtering, chemical vapor deposition (CVD), molecular beam epitaxy (MBE), etc.
  • a Ru-containing film can be formed on a substrate using an epitaxy method and an atomic layer deposition (ALD) method.
  • ALD atomic layer deposition
  • the Ru-containing film may also adhere to the back surface of the substrate on which the Ru-containing film is placed (the surface opposite to the Ru-containing film side). be.
  • the above method may be performed through a predetermined mask to form Ru-containing wiring on the substrate.
  • a substrate on which a Ru-containing film and/or a Ru-containing wiring is disposed may be subjected to a predetermined process and used as an object to be processed in the processing method of the present invention.
  • the substrate may be subjected to dry etching to produce a substrate having dry etching residue containing Ru.
  • the substrate may be subjected to CMP to produce a substrate containing a Ru-containing material.
  • CMP chemical vapor deposition
  • a Ru-containing film on a region of the substrate where a Ru-containing film is to be formed by sputtering, CVD, molecular beam epitaxy, or atomic layer deposition, Ru that adheres to a region other than the region where a Ru-containing film is to be formed can be removed.
  • a substrate having inclusions may be manufactured.
  • a method of treating a substrate in which a Ru-containing material is present will be described as a representative example. Note that hereinafter, the substrate on which Ru-containing material is present will also be simply referred to as a "substrate to be processed.”
  • the method for treating a substrate to be treated is a step of bringing a composition of the present invention into contact with an object to be treated containing Ru (in particular, a substrate on which a Ru-containing material is disposed). It has A. By performing this step, Ru can be removed. Further, the substrate on which the Ru-containing material is placed (substrate to be processed) is as described above.
  • the method of bringing the composition of the present invention into contact with the object to be treated is not particularly limited, and examples include a method of immersing the object to be treated in the composition placed in a tank, a method of spraying the composition onto the object to be treated. , a method of flowing a composition onto an object to be treated, and a combination thereof. Among these, a method in which the object to be treated is immersed in the composition is preferred.
  • mechanical stirring methods include, for example, a method of circulating the composition over the object to be treated, a method of flowing or spraying the composition on the object to be treated, and a method of irradiating the composition with ultrasonic waves (for example, megasonic waves).
  • An example of this method is to locally stir the liquid near the substrate.
  • the processing time of step A can be adjusted as appropriate.
  • the treatment time time of contact between the composition and the object to be treated
  • the temperature of the composition during treatment is not particularly limited, but is preferably 20 to 75°C, more preferably 20 to 60°C, even more preferably 40 to 65°C, and particularly preferably 50 to 65°C.
  • step A while measuring the concentration of one or more components contained in the composition, if necessary, one or more selected from the group consisting of a solvent and a component of the composition is added to the composition. You may carry out the process of adding. By carrying out this treatment, the concentration of the components in the composition can be stably maintained within a predetermined range. Water is preferred as the solvent.
  • step A include, for example, step A1 of recess etching the Ru-containing wiring or Ru-containing liner placed on the substrate using the composition; A step A2 of removing the Ru-containing film on the outer edge (bevel portion) of the substrate, a step A3 of using the composition to remove the Ru-containing substance adhering to the back surface of the substrate on which the Ru-containing film is disposed, a step A3 of using the composition.
  • Step A4 of removing Ru-containing materials on the substrate after dry etching using the composition Step A5 of removing Ru-containing materials on the substrate after chemical mechanical polishing using the composition, and using the composition, After the ruthenium-containing film is deposited on the ruthenium-containing film formation area on the substrate, a step A6 of removing ruthenium-containing substances in areas other than the ruthenium-containing film formation area on the substrate is included.
  • the present processing method used for each of the above processes will be explained below.
  • Step A1 includes step A1 in which a composition is used to recess-etch the Ru-containing wiring (wiring containing Ru) and the Ru-containing liner (liner containing Ru) arranged on the substrate.
  • a substrate having a Ru-containing wiring and a substrate having a Ru-containing liner will be specifically described as examples of the objects to be processed in step A1.
  • FIG. 1 shows a schematic diagram of the upper part of a cross section of a substrate having Ru-containing wiring (hereinafter also referred to as "Ru wiring board"), which is an example of the object to be processed in the recess etching process of step A1.
  • the Ru wiring board 10a shown in FIG. 1 includes a substrate (not shown), an insulating film 12 having a groove etc. placed on the substrate, a barrier metal layer 14 placed along the inner wall of the groove etc., and an inside of the groove etc.
  • the Ru-containing wiring 16 is filled with Ru.
  • the Ru-containing wiring in the Ru wiring board preferably contains Ru alone or an alloy of Ru.
  • the material constituting the barrier metal layer in the Ru wiring board is not particularly limited, and includes, for example, Ti metal, Ti nitride, Ti oxide, Ti-Si alloy, Ti-Si composite nitride, Ti-Al alloy, Ta metal, Examples include Ta nitride and Ta oxide.
  • FIG. 1 describes an embodiment in which the Ru wiring board has a barrier metal layer, the Ru wiring board may have no barrier metal layer.
  • step A1 a recess etching process is performed on the Ru wiring board using the composition described above, thereby removing a portion of the Ru-containing wiring and forming a recess. More specifically, when step A1 is performed, the barrier metal layer 14 and a portion of the Ru-containing wiring 16 are removed to form a recess 18, as shown in the Ru wiring board 10b of FIG. Although the Ru wiring board 10b in FIG. 2 shows a state in which the barrier metal layer 14 and a portion of the Ru-containing wiring 16 are removed, the barrier metal layer 14 is not removed and only the Ru-containing wiring 16 is removed.
  • the recess 18 may be formed by removing a portion of the recess 18 .
  • the method for manufacturing the Ru wiring board is not particularly limited, and includes, for example, a step of forming an insulating film on the substrate, a step of forming a groove etc. in the insulating film, and a step of forming a barrier metal layer on the insulating film. , a method including a step of forming a Ru-containing film to fill a groove or the like, and a step of subjecting the Ru-containing film to a planarization process.
  • FIG. 3 shows a schematic diagram of the upper part of a cross section of a substrate having a Ru-containing liner (hereinafter also referred to as "Ru liner substrate”), which is another example of the object to be processed in the recess etching process of step A1.
  • Ru liner substrate a Ru-containing liner
  • the Ru liner substrate 20a shown in FIG. 3 includes a substrate (not shown), an insulating film 22 having a groove etc. arranged on the substrate, an Ru-containing liner 24 arranged along the inner wall of the groove etc., and an inside of the groove etc. It has a wiring part 26 filled with.
  • the Ru-containing liner in the Ru liner substrate preferably contains Ru alone or an alloy of Ru.
  • a barrier metal layer may be provided separately between the Ru-containing liner 24 and the insulating film 22. Examples of materials constituting the barrier metal layer are the same as those for the Ru wiring board.
  • the material constituting the wiring part in the Ru liner substrate is not particularly limited, and examples thereof include Cu metal, W metal, Mo metal, and Co metal.
  • step A1 a recess etching process is performed on the Ru liner substrate using the composition described above, thereby removing a portion of the Ru-containing liner and forming a recess. More specifically, when step A1 is performed, as shown in the Ru liner substrate 20b of FIG. 4, the Ru-containing liner 24 and a portion of the wiring portion 26 are removed to form a recess 28.
  • the method for manufacturing the Ru liner substrate is not particularly limited, and includes a step of forming an insulating film on the substrate, a step of forming a groove etc. on the insulating film, a step of forming a Ru liner on the insulating film, and a step of forming a groove etc. on the insulating film.
  • a method includes a step of forming a metal film so as to fill the metal film, and a step of performing planarization treatment on the metal film.
  • a specific method for step A1 includes a method of bringing the Ru wiring board or the Ru liner board into contact with the composition.
  • the method of contacting the Ru wiring board or the Ru liner board with the composition is as described above.
  • the contact time of the Ru wiring board or the Ru liner board with the composition and the preferable range of the temperature of the composition are as described above.
  • step B of treating the substrate obtained in step A1 using a predetermined solution may be performed as necessary. May be implemented.
  • a predetermined solution hereinafter also referred to as "specific solution”.
  • the components constituting the Ru-containing wiring or Ru liner hereinafter also referred to as "Ru-containing wiring, etc.”
  • the components constituting the barrier metal layer are The ability to dissolve the composition of the present invention may vary depending on the type. In such a case, it is preferable to adjust the degree of dissolution between the Ru-containing wiring and the like and the barrier metal layer by using a solution that has better dissolving power for the barrier metal layer.
  • the specific solution is preferably a solution that has poor dissolving power for Ru-containing wiring and the like, but has excellent dissolving power for the substance constituting the barrier metal layer. Note that the specific solution preferably has poor ability to dissolve W-containing substances.
  • Specific solutions include, for example, a mixture of hydrofluoric acid and hydrogen peroxide (FPM), a mixture of sulfuric acid and hydrogen peroxide (SPM), and a mixture of ammonia and hydrogen peroxide (APM). , and a mixture of hydrochloric acid and hydrogen peroxide (HPM).
  • FPM hydrofluoric acid and hydrogen peroxide
  • SPM sulfuric acid and hydrogen peroxide
  • APIM ammonia and hydrogen peroxide
  • HPM hydrochloric acid and hydrogen peroxide
  • composition ratios are as follows: hydrofluoric acid is 49% by mass hydrofluoric acid, sulfuric acid is 98% by mass sulfuric acid, aqueous ammonia is 28% by mass ammonia water, hydrochloric acid is 37% by mass hydrochloric acid, and hydrogen peroxide is 31% by mass. % hydrogen peroxide solution.
  • the method of treating the substrate obtained in step A1 using the specific solution is preferably a method of bringing the specific solution into contact with the substrate obtained in step A1.
  • the method of bringing the specific solution into contact with the substrate obtained in Step A1 is not particularly limited, and includes, for example, the same method as bringing the composition into contact with the substrate.
  • the contact time between the specific solution and the substrate obtained in step A1 is, for example, preferably 0.25 to 10 minutes, more preferably 0.5 to 5 minutes.
  • Step A1 and Step B may be repeated alternately.
  • step A1 and step B are preferably performed 1 to 10 times each.
  • the first step and the last step may be either Step A1 or Step B.
  • Step A2 includes, for example, step A2 in which a composition is used to remove the Ru-containing film on the outer edge of the substrate on which the Ru-containing film is disposed.
  • FIG. 5 is a schematic diagram (top view) showing an example of a substrate on which the Ru-containing film, which is the object to be processed in step A2, is disposed.
  • the workpiece 30 in step A2 shown in FIG. 5 is a laminate including a substrate 32 and an Ru-containing film 34 disposed on one main surface of the substrate 32 (the entire area surrounded by a solid line). As will be described later, in step A2, the Ru-containing film 34 located at the outer edge 36 (region outside the broken line) of the object to be processed 30 is removed.
  • the substrate and Ru-containing film in the object to be processed are as described above.
  • the Ru-containing film preferably contains Ru alone or an alloy of Ru.
  • step A2 is not particularly limited, and for example, a method may be mentioned in which the composition is supplied from a nozzle so that the composition contacts only the Ru-containing film on the outer edge of the substrate.
  • the substrate processing apparatus and substrate described in JP-A-2010-267690, JP-A 2008-080288, JP-A 2006-100368, and JP-A 2002-299305 are used.
  • the treatment method can be preferably applied.
  • the method of contacting the composition with the object to be treated is as described above.
  • the contact time between the composition and the object to be treated and the preferable range of the temperature of the composition are as described above.
  • Step A3 includes step A3 in which a composition is used to remove Ru-containing substances adhering to the back surface of the substrate on which the Ru-containing film is disposed.
  • the object to be processed in step A3 includes the object to be processed used in step A2.
  • the Ru-containing film is formed by sputtering, CVD, or the like. At this time, Ru-containing substances may adhere to the surface of the substrate opposite to the Ru-containing film side (on the back surface).
  • Step A3 is performed in order to remove Ru-containing substances from the object to be processed.
  • step A3 is not particularly limited, and for example, a method may be mentioned in which the composition is sprayed so that the composition contacts only the back surface of the substrate.
  • the method of contacting the composition with the object to be treated is as described above.
  • the contact time between the composition and the object to be treated and the preferable range of the temperature of the composition are as described above.
  • Step A4 includes step A4 of removing Ru-containing materials on the substrate after dry etching using a composition.
  • FIGS. 6 and 8 are schematic diagrams showing examples of objects to be processed in step A4. Each figure will be explained below.
  • the object to be processed 40 shown in FIG. 6 includes a Ru-containing film 44, an etching stop layer 46, an interlayer insulating film 48, and a metal hard mask 50 in this order on a substrate 42, and is placed in a predetermined position after a dry etching process or the like.
  • a groove or the like 52 is formed in which the Ru-containing film 44 is exposed.
  • the object to be processed shown in FIG. This is a laminate having a groove or the like 52 that penetrates from its surface to the surface of the Ru-containing film 44 at the position of the laminate.
  • etching residue 56 is adhered to the inner wall 54 of.
  • the dry etching residue contains Ru-containing materials.
  • the workpiece 60b shown in FIG. 8 is obtained by dry etching the workpiece shown in FIG. 7 before dry etching.
  • the object to be processed 60a shown in FIG. It has a metal hard mask 64 in which the Ru-containing film 66 is located in the opening.
  • This object to be processed 60a is produced by forming an insulating film 62 and a metal hard mask 64 in this order on a substrate (not shown), forming grooves etc. in the insulating film 62 located in the openings of the metal hard mask 64, and then forming grooves etc.
  • the Ru-containing film 66 is formed by filling the Ru-containing material into the Ru-containing material.
  • the object to be processed 60b shown in FIG. 8 has a metal hard mask 64 having an opening at the position of the groove etc. 72 arranged in the groove etc., and has a cross-sectional wall 74a made of the insulating film 62 and the metal hard mask 64 in the groove etc. 72, and a bottom made of the Ru-containing film 66.
  • Dry etching residue 76 is attached to the wall 74b. The dry etching residue contains Ru-containing materials.
  • the Ru-containing film of the object to be processed to be subjected to step A4 contains Ru alone or an alloy of Ru. It is preferable that the Ru-containing material of the object to be processed to be subjected to step A4 contains Ru alone or an alloy of Ru.
  • Known materials are selected for the interlayer insulating film and the insulating film. A known material is selected for the metal hard mask. Although FIGS. 6, 7, and 8 have described embodiments in which a metal hard mask is used, a resist mask formed using a known photoresist material may also be used.
  • a specific method for step A4 includes a method of bringing the composition into contact with the object to be treated.
  • the method of contacting the composition with the wiring board is as described above.
  • the preferred range of the contact time between the composition and the wiring board and the temperature of the composition are as described above.
  • Step A5 includes step A5 of removing Ru-containing materials on the substrate after chemical mechanical polishing (CMP) using a composition.
  • CMP technology has been introduced into the manufacturing process for flattening insulating films, connecting holes, Damascene wiring, and the like.
  • a substrate after CMP may be contaminated by a large amount of particles used for polishing particles, metal impurities, and the like. Therefore, it is necessary to remove and clean these contaminants before entering the next processing step. Therefore, by performing step A5, it is possible to remove the Ru-containing substances that are generated and adhere to the substrate when the object to be processed by CMP has a Ru-containing wiring or a Ru-containing film.
  • the object to be processed in step A5 may be a substrate having a Ru-containing material after CMP.
  • the Ru-containing material preferably contains Ru alone or an alloy of Ru.
  • a specific method of step A5 includes a method of bringing the composition into contact with the object to be treated. The method of contacting the composition with the wiring board is as described above. The contact time between the composition and the wiring board and the preferable range of the temperature of the composition are as described above.
  • Step A6 includes using a composition to remove Ru-containing materials in areas other than the Ru-containing film formation area on the substrate after depositing the Ru-containing film in the Ru-containing film formation area on the substrate.
  • An example is step A6.
  • the method for forming the Ru-containing film is not particularly limited, and the Ru-containing film can be formed on the substrate using a sputtering method, a CVD method, an MBE method, or an ALD method.
  • a Ru-containing film is formed in the Ru-containing film formation area (area where the Ru-containing film is planned to be formed) on the substrate using the above method, it can also be applied to unintended areas (areas other than the Ru-containing film formation area).
  • a Ru-containing film may be formed.
  • FIG. 10 shows an example of the object to be processed in step A6.
  • the object 80b shown in FIG. 10 is obtained by forming a Ru-containing film on the object 80a shown in FIG. 9 before forming the Ru-containing film.
  • the object to be processed 80a shown in FIG. 9 includes an insulating film 82 disposed on a substrate (not shown) and a metal hard mask 84 disposed on the insulating film 82.
  • the insulating film 82 has grooves 86 and the like.
  • the object 80b shown in FIG. 10 is obtained.
  • the object to be processed 80b shown in FIG. It has a metal hard mask 84 having an opening at the position of the groove etc. 86 arranged in the groove, etc., and a cross-sectional wall 90a made of the insulating film 82 and the metal hard mask 84 in the groove etc. 86, and a bottom made of the Ru-containing film 88. Residue 92 from the formation of the Ru-containing film is attached to the wall 90b.
  • the region where the Ru-containing film 88 is located corresponds to the region where the Ru-containing film is to be formed, and the cross-sectional wall 90a and the bottom wall 90b correspond to regions other than the region where the Ru-containing film is to be formed.
  • the Ru-containing film preferably contains Ru alone or an alloy of Ru.
  • the Ru-containing material preferably contains Ru alone or an alloy of Ru.
  • a known material is selected for the metal hard mask. Although FIGS. 9 and 10 describe an embodiment using a metal hard mask, a resist mask formed using a known photoresist material may also be used.
  • a specific method for step A6 includes a method of bringing the composition into contact with the object to be treated.
  • the method of contacting the composition with the wiring board is as described above.
  • the preferred range of the contact time between the composition and the wiring board and the temperature of the composition are as described above.
  • this treatment step may include step C, in which the substrate obtained in step A is rinsed using a rinsing liquid, if necessary.
  • the rinsing liquid examples include hydrofluoric acid (preferably 0.001 to 1% by mass hydrofluoric acid), hydrochloric acid (preferably 0.001 to 1% by mass hydrochloric acid), and hydrogen peroxide (0.5 to 31% by mass).
  • hydrogen oxide solution is preferred, and 3 to 15% by mass hydrogen peroxide solution is more preferred), a mixed solution of hydrofluoric acid and hydrogen peroxide solution (FPM), a mixed solution of sulfuric acid and hydrogen peroxide solution (SPM), ammonia
  • FPM hydrofluoric acid and hydrogen peroxide solution
  • SPM sulfuric acid and hydrogen peroxide solution
  • FPM, SPM, APM, and HPM are preferred.
  • Preferred conditions for FPM, SPM, APM, and HPM are, for example, the same as the preferred embodiments for FPM, SPM, APM, and HPM used as the above-mentioned specific solution.
  • hydrofluoric acid, nitric acid, perchloric acid, and hydrochloric acid are intended to be aqueous solutions in which HF, HNO 3 , HClO 4 , and HCl are dissolved in water, respectively.
  • Ozone water, carbon dioxide water, and hydrogen water are intended to be aqueous solutions in which O 3 , CO 2 , and H 2 are dissolved in water, respectively.
  • These rinsing liquids may be mixed and used as long as the purpose of the rinsing process is not impaired.
  • a specific method for step C is, for example, a method of bringing the rinsing liquid into contact with the substrate obtained in step A, which is the object to be processed.
  • Examples of contacting methods include immersing the substrate in a rinsing liquid in a tank, spraying the rinsing liquid onto the substrate, flowing the rinsing liquid onto the substrate, and any combination thereof. can be mentioned.
  • the treatment time (the contact time between the rinsing liquid and the object to be treated) is not particularly limited, and is, for example, 5 seconds to 5 minutes.
  • the temperature of the rinsing liquid during treatment is not particularly limited, but is generally preferably 16 to 60°C, more preferably 18 to 40°C. When SPM is used as the rinsing liquid, its temperature is preferably 90 to 250°C.
  • This treatment method may include a step D of performing a drying treatment after the step C, if necessary.
  • the method of the drying process is not particularly limited, but may include spin drying, flow of drying gas over the substrate, means for heating the substrate (for example, heating with a hot plate or infrared lamp), IPA (isopropyl alcohol) vapor drying, Marangoni drying, Rotagoni drying. drying, and combinations thereof.
  • the drying time can be varied as appropriate depending on the particular method used, and is, for example, on the order of 30 seconds to several minutes.
  • the method for treating the object described above can be suitably applied to a method for manufacturing semiconductor devices.
  • the above processing methods may be performed in combination before or after other steps performed on the substrate.
  • the above treatment method may be incorporated into other steps while implementing the above treatment method, or may be implemented by incorporating the above treatment method into other steps.
  • Other processes include, for example, processes for forming structures such as metal wiring, gate structures, source structures, drain structures, insulating films, ferromagnetic layers, and nonmagnetic layers (e.g., layer formation, etching, chemical mechanical polishing, and (transformation, etc.), resist formation process, exposure process and removal process, heat treatment process, cleaning process, and inspection process.
  • the above processing method can be performed at any stage of the back end process (BEOL: Back end of the line), middle process (MOL: Middle of the line), or front end process (FEOL: Front end of the line). It is preferable to do this in a front-end process or a middle process.
  • Nonionic surfactant (Polyoxyalkylene alkyl ether) ⁇ S-1: Compound represented by the following structural formula
  • ⁇ S-2 NIKKOL (registered trademark) SG-C420 (POE (20) POP (4) cetyl ether, HLB value 16.5, manufactured by Nikko Chemicals Co., Ltd.)
  • ⁇ S-3 Takesurf (registered trademark) D-1420 (polyoxyethylene stearyl ether, HLB value 15.3, manufactured by Takemoto Yushi Co., Ltd.)
  • ⁇ S-4 Emulgen (registered trademark) 2025G (polyoxyethylene octyl dodecyl ether, HLB value 15.7, manufactured by Kao Corporation)
  • ⁇ S-5 Emulgen (registered trademark) 104P (polyoxyethylene (4) lauryl ether, HLB value 9.6, manufactured by Kao Corporation)
  • ⁇ S-6 Emulgen (registered trademark) 106 (polyoxyethylene (5) lauryl ether, HLB value 10.5, manufactured by Kao Corporation)
  • ⁇ S-7 Emulgen (registered trademark) 108 (polyoxyethylene
  • ⁇ S-21 Triton (registered trademark) X-100 (polyethylene glycol mono-4-octylphenyl ether, HLB value 13.4, manufactured by Dow Chemical Company)
  • ⁇ S-22 Triton (registered trademark) X-405 (polyethylene glycol mono-4-octylphenyl ether, HLB value 17.6, manufactured by Dow Chemical Company)
  • ⁇ S-23 Surfynol (registered trademark) MD-20 (acetylene glycol, HLB value 8.0, manufactured by Evonik)
  • the Ru removability when a treated object containing Ru was treated with the composition of the present invention was confirmed by the following procedure.
  • a Ru layer (a layer composed of Ru with a thickness of 30 nm) was formed by PVD at a position up to 5 mm from the edge of the wafer.
  • the substrate was prepared.
  • a treatment for removing the Ru layer on the bevel portion of the substrate was performed for a predetermined period of time. did.
  • the temperature of the composition was 25°C.
  • the edge of the substrate after the above treatment was observed using a scanning electron microscope (S4800, manufactured by Hitachi High-Technologies Corporation) to confirm the presence or absence of the Ru layer.
  • S4800 scanning electron microscope
  • the time required to completely remove the Ru layer was measured, and the Ru removability was evaluated using the following evaluation criteria.
  • the quaternary ammonium salt is tetramethylammonium salt, tetraethylammonium salt, tetrabutylammonium salt, ethyltrimethylammonium salt, triethylmethylammonium salt, diethyldimethylammonium salt, tributylmethyl At least one member selected from the group consisting of ammonium salt, dimethyldipropylammonium salt, benzyltrimethylammonium salt, benzyltriethylammonium salt, (2-hydroxyethyl)trimethylammonium salt, and triethyl(2-hydroxyethyl)ammonium salt. It was confirmed that when Ru was included, the Ru removability was better (comparison between Example 39 and Examples 49 and 51, etc.).

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Abstract

La présente invention fournit une composition ayant des propriétés d'élimination de Ru remarquables, le procédé de traitement d'un objet à traiter à l'aide de la composition, et un procédé de fabrication d'un dispositif à semi-conducteur. La composition selon la présente invention comprend : un acide périodique ou un sel de celui-ci ; un sel d'ammonium quaternaire ; au moins un tensioactif ionique choisi dans le groupe constitué par un tensioactif anionique, un tensioactif cationique et un tensioactif amphotère ; et un tensioactif non ionique.
PCT/JP2023/029251 2022-08-31 2023-08-10 Composition, procédé de traitement d'un objet à traiter et procédé de fabrication d'un dispositif à semi-conducteur WO2024048241A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231354A (ja) * 2008-03-19 2009-10-08 Fujifilm Corp 半導体デバイス用洗浄液、および洗浄方法
WO2021005980A1 (fr) * 2019-07-05 2021-01-14 富士フイルム株式会社 Composition, kit et procédé de traitement pour substrat
WO2022049973A1 (fr) * 2020-09-03 2022-03-10 富士フイルム株式会社 Composition et procédé de traitement de substrat

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231354A (ja) * 2008-03-19 2009-10-08 Fujifilm Corp 半導体デバイス用洗浄液、および洗浄方法
WO2021005980A1 (fr) * 2019-07-05 2021-01-14 富士フイルム株式会社 Composition, kit et procédé de traitement pour substrat
WO2022049973A1 (fr) * 2020-09-03 2022-03-10 富士フイルム株式会社 Composition et procédé de traitement de substrat

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