WO2024032525A1 - Light modulation layer of spectrum chip, and spectrum chip - Google Patents

Light modulation layer of spectrum chip, and spectrum chip Download PDF

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Publication number
WO2024032525A1
WO2024032525A1 PCT/CN2023/111391 CN2023111391W WO2024032525A1 WO 2024032525 A1 WO2024032525 A1 WO 2024032525A1 CN 2023111391 W CN2023111391 W CN 2023111391W WO 2024032525 A1 WO2024032525 A1 WO 2024032525A1
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WO
WIPO (PCT)
Prior art keywords
light modulation
micro
modulation layer
structural units
nano
Prior art date
Application number
PCT/CN2023/111391
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French (fr)
Chinese (zh)
Inventor
曹金磊
王宇
黄志雷
Original Assignee
北京与光科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from CN202210951214.1A external-priority patent/CN117631095A/en
Priority claimed from CN202210958619.8A external-priority patent/CN117629950A/en
Application filed by 北京与光科技有限公司 filed Critical 北京与光科技有限公司
Publication of WO2024032525A1 publication Critical patent/WO2024032525A1/en

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59Transmissivity
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures

Definitions

  • the present application relates to the field of spectrum technology, and more specifically, to a light modulation layer of a spectrum chip and a spectrum chip including the same.
  • spectral information can be said to be the “fingerprint” of all things.
  • the spectrometer can directly detect the spectral information of a substance and obtain the existence status and material composition of the measured target. It is one of the important testing instruments in the fields of material characterization and chemical analysis.
  • Spectrometers often have different responses to incident light of different polarizations.
  • polarizers need to be added to the optical path. This not only increases the cost, but also makes it difficult to miniaturize. ization and performance stability cannot be guaranteed.
  • Embodiments of the present application provide a light modulation layer of a spectrum chip and a spectrum chip including the same, which solves the sensitivity of the transmission spectrum of the spectrum chip to polarization by including structural units with sub-structural units having predetermined angles.
  • a light modulation layer of a spectrum chip including: one or more structural units, each structural unit includes n sub-structural units, and each sub-structural unit within each structural unit
  • the number, shape, and structure of the micro-nano structures are consistent for the plurality of sub-structural units, and the positions of the micro-nano structures relative to the sub-structural units correspond to each other, and n in each structural unit
  • n is greater than or equal to 2.
  • each sub-structural unit includes at least one micro-nano structure.
  • each sub-structural unit includes at least two micro-nano structures, and the micro-nano structures are irregularly arranged.
  • the structural unit includes a first sub-structural unit and a second sub-structural unit, and the second sub-structural unit is formed by rotating the first sub-structural unit 90 degrees.
  • a light modulation layer of a spectrum chip including: n structural units, each structural unit having a plurality of micro-nano structural units, and the micro-nano structural units are arranged according to periodic rules.
  • the structural unit is implemented as a photonic crystal, and the arrangement of the micro-nano structural units of each structural unit is consistent for the n structural units, and the multiple micro-nano structural units are relative to the structure.
  • the positions of the units correspond to each other, and there is a rotation angle ⁇ between the multiple micro-nano structural units of each two structural units in the n structural units, which satisfies:
  • the rotation angle ⁇ between the multiple micro-nano structural units of each two structural units in the n structural units includes: the multiple micro-nano structural units of the two structural units.
  • the nanostructure unit has a rotation angle ⁇ as a whole.
  • the micro-nano structural unit includes a micro-nano structure, the micro-nano structure constitutes a lattice, the lattice has a lattice translation vector, in the structural unit according to the The lattice translation vector densely tiles the multiple micro-nano structural units.
  • the micro-nano structural unit includes a plurality of micro-nano structures, the multiple micro-nano structures constitute a lattice, and the lattice has a lattice translation vector.
  • the plurality of micro-nano structural units are densely packed according to the lattice translation vector.
  • the plurality of micro-nano structures include the same type of micro-nano structures and/or different types of micro-nano structures.
  • the rotation angle ⁇ between the multiple micro-nano structural units of each two structural units in the n structural units includes: the multiple micro-nano structural units of the two structural units. There is a rotation angle ⁇ between each micro-nano structural unit in the nanostructural unit.
  • the micro-nano structural unit includes one or more micro-nano structures.
  • the micro-nano structural unit includes a plurality of micro-nano structures, and the micro-nano structural unit is at least three-dimensional rotationally symmetrical.
  • the plurality of micro-nano structures in the micro-nano structural unit are rotated by 60° or 90° with each other.
  • a spectrum chip including: a light modulation layer as described above; and an image sensor, the light modulation layer is disposed on the photosensitive path of the image sensor, and the structure Cells correspond to physical pixels of the image sensor.
  • the spectrum chip further comprising: a light-transmitting layer located between the light modulation layer and the image sensor, the light-transmitting layer being formed on the surface of the image sensor and having Flat upper surface.
  • the spectrum chip as described above further includes: a protective layer located on the upper surface of the light modulation layer for protecting the light modulation layer.
  • the micro-nano structure of the structural unit of the light modulation layer is a modulation hole, and the modulation hole is at least partially filled with a filling material.
  • the light modulation layer includes a first light modulation layer and a second light modulation layer as the light modulation layer as described above, and the first light modulation layer and the second light modulation layer
  • the modulation layer is disposed on the photosensitive path of the image sensor, and the structural units of the first light modulation layer and the second light modulation layer correspond to physical pixels of the image sensor.
  • the spectrum chip further comprising: a light-transmitting layer located between the image sensor and the second light modulation layer, the light-transmitting layer being formed on the surface of the image sensor and has a flat upper surface.
  • the spectrum chip further includes: a connection layer located between the first light modulation layer and the second light modulation layer and used to connect the first light modulation layer and the second light modulation layer.
  • the second light modulation layer located between the first light modulation layer and the second light modulation layer and used to connect the first light modulation layer and the second light modulation layer.
  • the spectrum chip as described above further includes: a protective layer located on the upper surface of the first light modulation layer for protecting the first light modulation layer.
  • the micro-nano structure of the structural unit of the first light modulation layer and the second light modulation layer is a modulation hole, and the modulation hole is at least partially filled with a filling material.
  • the light-transmitting layer, the connecting layer and the protective layer are formed of a first material
  • the first light modulation layer and the second light modulation layer are formed of a second material.
  • the first refractive index of the first material is lower than the second refractive index of the second material.
  • the light modulation layer includes three or more light modulation layers as the light modulation layer as described above, and the three or more light modulation layers are disposed on the photosensitive path of the image sensor. on, and the structural units of the three or more light modulation layers correspond to physical pixels of the image sensor.
  • the spectrum chip includes: a non-modulation area and a modulation area arranged on the photosensitive path of the image sensor, the non-modulation area does not have the above structural unit, and the modulation area has the above The structural units or combinations thereof.
  • the light modulation layer of the spectrum chip and the spectrum chip including the same solved the sensitivity of the transmission spectrum of the spectrum chip to polarization by including structural units with sub-structural units having predetermined angles.
  • Figure 1 illustrates a schematic diagram of a spectrum chip according to an embodiment of the present application.
  • FIG. 2 illustrates a schematic diagram of a first configuration example of a structural unit of a spectrum chip according to the first embodiment of the present application.
  • FIG. 3 illustrates a schematic diagram of a second configuration example of the structural unit of the spectrum chip according to the first embodiment of the present application.
  • FIG. 4 illustrates a schematic diagram of a third configuration example of the structural unit of the spectrum chip according to the first embodiment of the present application.
  • Figure 5 illustrates the structural unit and the physical image on the image sensor according to the first embodiment of the present application. Examples of correspondences between elements.
  • FIG. 6 illustrates a schematic diagram of a preferred configuration of structural units of a spectrum chip according to the first embodiment of the present application.
  • FIG. 7A to 7C illustrate schematic diagrams of simulation verification of eliminating the influence of light polarization of the preferred configuration of the structural unit shown in FIG. 6 .
  • FIG. 8 illustrates a schematic diagram of a preferred configuration of the light modulation layer of the spectrum chip according to the first embodiment of the present application.
  • 9A to 9C illustrate a schematic diagram of the cropping design of multiple structural units in the light modulation layer of the spectrum chip according to the second embodiment of the present application.
  • Figure 10 illustrates a schematic diagram of a structural unit obtained by the cutting design shown in Figures 9A to 9C.
  • FIG. 11 illustrates a schematic diagram of the optimized arrangement of micro-nano structures in the structural unit shown in FIG. 10 .
  • FIG. 12 illustrates a schematic diagram of a micro-nano structure unit including a micro-nano structure according to the second embodiment of the present application.
  • FIG. 13 illustrates a schematic diagram of a micro-nano structural unit including a plurality of micro-nano structures according to the second embodiment of the present application.
  • Figure 14 illustrates a schematic diagram of densely paving multiple micro-nano structural units based on lattice translation vectors according to the second embodiment of the present application.
  • Figure 15 illustrates a schematic diagram of a single micro-nano structural unit rotating to form a structural unit according to the second embodiment of the present application.
  • Figure 16 illustrates a schematic diagram of a single micro-nano structure rotating to form a structural unit according to the second embodiment of the present application.
  • FIG. 17 illustrates a schematic diagram of a structural unit composed of three micro-nano structural units with a lattice translation vector rotated by 60° according to the second embodiment of the present application.
  • FIG. 18 illustrates a schematic diagram of a structural unit composed of two micro-nano structural units with a lattice translation vector rotated by 90° according to the second embodiment of the present application.
  • 19A to 19C respectively illustrate schematic diagrams of three-dimensional, four-dimensional and six-dimensional rotationally symmetric micro-nano structural units according to the second embodiment of the present application.
  • FIG. 20 illustrates a schematic diagram of a first example of a stacked structure of a spectrum chip according to an embodiment of the present application.
  • FIG. 21 illustrates a second example of a stacked structure of a spectrum chip according to an embodiment of the present application. intention.
  • Figure 22 illustrates a schematic diagram of the configuration of two light modulation layers of a spectrum chip according to an embodiment of the present application.
  • FIG. 23 illustrates a schematic diagram of a third example of a stacked structure of a spectrum chip according to an embodiment of the present application.
  • FIG. 24 illustrates a schematic diagram of a fourth example of a stacked structure of a spectrum chip according to an embodiment of the present application.
  • FIG. 25 illustrates a schematic diagram of a fifth example of a stacked structure of a spectrum chip according to an embodiment of the present application.
  • FIG. 26 illustrates a schematic diagram of a sixth example of a stacked structure of a spectrum chip according to an embodiment of the present application.
  • computational reconstruction spectrometer which approximates or even reconstructs the spectrum of incident light through calculation.
  • Computationally reconstructed spectrometers can relatively better solve the problem of reduced detection performance due to miniaturization.
  • the spectrum chip is the core component.
  • Figure 1 illustrates a schematic diagram of a spectrum chip according to an embodiment of the present application.
  • the spectrum chip 100 in the embodiment of the present application includes a light modulation layer 110 , an image sensor 120 and a data processing unit 130 .
  • the light modulation layer 110 is located on the photosensitive path of the image sensor 120 and is used to perform broad spectrum modulation of incident light to obtain a modulated light signal.
  • the image sensor 120 is configured to receive the modulated optical signal, and process the modulated optical signal to obtain original spectral information of the measured target.
  • the image sensor 120 may be a CMOS image sensor (CIS), CCD, array light detector, etc.
  • the spectrum chip 100 also includes a data processing unit 130.
  • the data processing unit 130 can be a processing unit such as an MCU, CPU, GPU, FPGA, NPU, ASIC, etc., which can process data generated by the image sensor.
  • the light modulation layer 110 usually includes a plurality of structural units arranged in a specific pattern, and the structural units are arranged in a certain period. Furthermore, each structural unit is composed of at least one micro-nano structure, and the micro-nano structure can be implemented as a structure such as a hole, a column, or a line.
  • the intensity signals of the incident light at different wavelengths ⁇ are recorded as They are different from each other.
  • one physical pixel is used, that is, one physical pixel corresponds to one structural unit, but it is not limited to this. In other embodiments, a group of multiple physical pixels may also correspond to one structural unit. . Therefore, in the computational spectrum device according to the embodiment of the present application, at least two structural units constitute a "spectral pixel" (it can be understood that multiple structural units and corresponding image sensors constitute a spectral pixel).
  • the effective transmission spectrum of the light modulation layer (the transmission spectrum used for spectral recovery is called the effective transmission spectrum) number of Ti ( ⁇ ) and the number of structural units may not be consistent.
  • the transmission spectrum of the light filter structure According to the needs of identification or recovery, it is manually set, tested, or calculated according to certain rules (for example, the transmission spectrum of each structural unit mentioned above through testing is the effective transmission spectrum), so the effective transmission spectrum of the light modulation layer
  • the number may be less than the number of structural units, or may even be greater than the number of structural units; in this variant embodiment, a certain transmission spectrum curve is not necessarily determined by one structural unit.
  • the present invention can use at least one spectral pixel to restore the spectrum.
  • a physical When a pixel corresponds to a structural unit, it can be understood as the measured light intensity corresponding to m "physical pixels", which is a vector with a length of m.
  • A (can be understood as the transmission spectrum curve) is the light response of the system to different wavelengths, which is determined by two factors: the transmittance of the light modulation layer and the quantum efficiency of the image sensor.
  • A is a matrix, and each row vector corresponds to the response of a structural unit to incident light of different wavelengths.
  • the incident light is sampled discretely and uniformly, with a total of n sampling points.
  • the number of columns of A is the same as the number of sampling points of the incident light.
  • x( ⁇ ) is the intensity of the incident light at different wavelengths ⁇ , which is the spectrum of the incident light to be measured.
  • the micro-nano structure (photonic crystal structure or non-photonic crystal structure) on the spectrum chip controls the transmittance of the spectrum chip at different wavelengths of the external light source.
  • the process of calculating the transmittance of a photonic crystal structure at different wavelengths due to the complexity of the light source, it is inevitably necessary to consider the polarization of the incident light.
  • the light modulation layer includes one or more structural units, and each structural unit includes n identical sub-structural units, for example, denoted as sub-structural units A 1 , A 2 , A 3 , ..., A n -1 , A n , wherein each substructural unit has at least one micro-nano structure.
  • the same sub-structural units means that the number, shape and structure of the micro-nano structures of the sub-structural units are consistent, and the positions of the micro-nano structures in the sub-structural units also correspond to each other, that is, the two are in After rotating at a predetermined angle, they can basically overlap.
  • the micro-nano structures may be regularly arranged according to periodicity, or may be arranged irregularly.
  • n sub-structural units are arranged within the structural unit will not affect the anti-polarization effect, that is, there is a rotation angle ⁇ between every two sub-structural units in the n sub-structural units, and the rotation angle ⁇ satisfy:
  • the embodiment of the present application provides a light modulation layer of a spectrum chip.
  • the light modulation layer includes one or more structural units, each structural unit includes a plurality of sub-structural units, and the The number, shape, and structure of the micro-nano structures of each sub-structural unit are consistent for the multiple sub-structural units, and the positions of the micro-nano structures relative to the sub-structural units correspond to each other, and each structure There is a rotation angle ⁇ between every two sub-structural units in the unit, which satisfies:
  • T total E 0 ⁇ [T 0 (A 1 )+(T ⁇ (A 2 )+T 2 ⁇ (A 3 )+...+T (n-1) ⁇ (A n )]+E ⁇ ⁇ [T ⁇ (A 1 )+T 2 ⁇ (A 2 )+T 3 ⁇ (A 3 )+...+T n ⁇ (A n )]
  • the influence of polarization on the transmission spectrum can be eliminated by adding the transmittance.
  • multiple sub-structural units A 1 , A 2 , A 3 , ..., An -1 , An they can also be randomly arranged and do not have to be arranged in order.
  • the essence of the spectrum chip according to the embodiment of the present application is that the transmission spectra corresponding to multiple sub-structural units of the structural unit are added together to achieve polarization independence.
  • the angle ⁇ 2 ⁇ 180°/4, that is, it includes four sub-structural units.
  • multiple sub-structural units can be of multiple types, and as long as different types of sub-structural units comply with the above-mentioned rotation angle relationship, polarization-independent can be achieved, which is essentially the same as the above description.
  • Figure 2 can also be understood as two types of secondary sub-structural units respectively forming sub-structural units, and then forming the final structural unit, so that polarization independence can be achieved.
  • n is greater than or equal to 2
  • m m
  • the rotation angle ⁇ 60°, where each sub-structural unit includes multiple micro-nano structures.
  • the rotation angle ⁇ 60°, where each sub-structural unit includes at least two types of micro-nano structures, and the micro-nano structures may be irregularly arranged.
  • FIG. 3 illustrates a schematic diagram of a second configuration example of a structural unit of a spectrum chip according to an embodiment of the present application.
  • FIG. 4 illustrates a schematic diagram of a third configuration example of a structural unit of a spectrum chip according to an embodiment of the present application.
  • m is equal to 1, and n is greater than or equal to 2.
  • each sub-structural unit includes at least one micro-nano structure.
  • each sub-structural unit includes at least two micro-nano structures, and the micro-nano structures may be irregularly arranged.
  • each structural unit of the light modulation layer needs to correspond to the physical pixel of the image sensor, and is generally regularly arranged on the photosensitive path of the image sensor, in the embodiment of the present application, generally speaking, Each structural unit will be a rectangle. Generally speaking, the first sub-structural unit and the second sub-structural unit will be implemented as a rectangle or a square.
  • FIG. 5 illustrates an example of the corresponding relationship between structural units and physical pixels on the image sensor according to an embodiment of the present application. As shown in Figure 5, taking one structural unit corresponding to four physical pixels (PD) as an example, it can be seen that each structural unit is composed of a first sub-structural unit and a second sub-structural unit. Among them, the micro-nano structure patterns of individual structural units are consistent, but their sizes or positions are different, and their corresponding transmission spectra are also different. It can be understood that the correlation of the transmission spectrum curve corresponding to each structural unit is relatively low.
  • the periodic regular arrangement may no longer be possible, as shown in Figures 2 and 3.
  • the light modulation layer of the spectrum chip does not need to completely include a modulation part composed of structural units, it may also include a non-modulation part without structural units. Therefore, the spectrum chip according to the embodiment of the present application The configuration of structural units is feasible.
  • Figure 6 illustrates a schematic diagram of a preferred configuration of structural units of a spectrum chip according to an embodiment of the present application.
  • each structural unit includes a first sub-structural unit and a second sub-structural unit, and the second sub-structural unit is formed by rotating the first sub-structural unit 90°, It can be understood that after the first sub-structural unit is obtained in the design, the first sub-structural unit is rotated 90° to obtain the second sub-structural unit, and then the first sub-structural unit and the second sub-structural unit are merged to obtain the structure. unit.
  • first sub-structural unit and the second sub-structural unit are composed of at least one micro-nano structure, and the micro-nano structure can be implemented as a modulated hole (through hole, blind hole or combination thereof), modulated hole columns and/or modulation lines, etc.
  • the transmitted light of the first sub-structural unit A is:
  • the structure of the second sub-structural unit B is rotated 90° relative to the first sub-structural unit A.
  • the transmitted light of the second sub-structural unit B is:
  • the structural unit composed of the corresponding two sub-structural units can eliminate the problem of incident light polarization.
  • the structural unit includes a first sub-structural unit and a second sub-structural unit formed based on a 90-degree rotation of the first sub-structural unit.
  • FIG. 7A to 7C illustrate schematic diagrams of simulation verification of eliminating the influence of light polarization of the preferred configuration of the structural unit shown in FIG. 6 .
  • the polarization direction is changed from 0 to 90°, and 5 points are taken.
  • the different polarization angle transmission spectra of the new structural unit formed by the first sub-structural unit A and the second sub-structural unit B are obtained, such as As shown in Figure 7C. It can be seen that the design scheme of the structural unit according to the embodiment of the present application can significantly remove the influence caused by the polarization of the incident light.
  • the light modulation layer of the spectrum chip may include multiple structural units.
  • FIG. 8 illustrates a schematic diagram of a preferred configuration of a light modulation layer of a spectrum chip according to an embodiment of the present application.
  • the light modulation layer includes a plurality of structural units, and each structural unit includes two sub-structural units, namely a first sub-structural unit and a second sub-structural unit, where the first sub-structural unit is Rotate 90° to obtain the second sub-structural unit, and then combine the first sub-structural unit and the second sub-structural unit to obtain the structural unit.
  • the sub-structural unit is a square, and the structural unit may be a regular rectangle.
  • the light modulation layer includes n identical structural units, for example, denoted as structural units A 1 , A 2 , A 3 ,..., An-1 , An , where each structural unit has multiple Micro-nano structural units.
  • the same structural unit means that the arrangement of the micro-nano structural units of the structural unit is consistent, and the positions of the micro-nano structural units in the structural unit also correspond to each other, that is, the two are basically basically the same after rotating at a predetermined angle. Can overlap.
  • the consistent arrangement of the micro-nano structural units of the structural unit means that the number, shape and structure of the micro-nano structural units included in each structural unit are basically the same.
  • the micro-nano structural units are arranged according to periodic rules, that is, the structural units are implemented as photonic crystals. Further, for n structural units A 1 , A 2 , A 3 , ..., A n-1 , A n , each of the two structural units, such as the micro-nano structural unit of structural unit A n and structural unit A n-1 There is a rotation relationship of ⁇ angle (in the embodiment of the present application, the direction of rotation is not limited, it can be clockwise or counterclockwise), and the following relationship is satisfied:
  • the embodiment of the present application provides a light modulation layer of a spectrum chip.
  • the light modulation layer includes n structural units.
  • Each structural unit has a plurality of micro-nano structural units.
  • the micro-nano structural units follow periodic rules. Arranged so that the structural units are implemented as photonic crystals, and the number, shape, and structure of the micro-nano structural units of each structural unit are consistent for the n structural units, and the multiple micro-nano structures
  • the positions of the units relative to the structural units correspond to each other, and there is a rotation angle ⁇ between the multiple micro-nano structural units of every two structural units in the n structural units, satisfying:
  • T total E 0 ⁇ [T 0 (A 1 )+(T ⁇ (A 2 )+T 2 ⁇ (A 3 )+...+T (n-1) ⁇ (A n )]+E ⁇ ⁇ [T ⁇ (A 1 )+T 2 ⁇ (A 2 )+T 3 ⁇ (A 3 )+...+T n ⁇ (A n )]
  • the essence of the spectrum chip according to the embodiment of the present application is that the transmission spectra corresponding to the structural units are added together to achieve polarization independence.
  • the rotation angle ⁇ between the multiple micro-nano structural units of each two structural units among the n structural units can be the multiple micro-nano structures of the two structural units.
  • the unit as a whole has a rotation angle ⁇ , or each micro-nano structural unit in the plurality of micro-nano structural units of the two structural units has a rotation angle ⁇ .
  • the rotation angle ⁇ between the multiple micro-nano structural units of each two structural units among the n structural units includes: the two The plurality of micro-nano structural units of the structural unit have a rotation angle ⁇ as a whole.
  • the rotation angle ⁇ between the multiple micro-nano structural units of each two structural units in the n structural units includes: the two structures There is a rotation angle ⁇ between each of the plurality of micro-nano structural units of the unit.
  • the n structural units as a whole have polarization-independent capabilities.
  • a more regular shape is generally required, such as a rectangle, a square, a hexagon, etc.
  • a selection box is set for the micro-nano structural units of n structural units with an overall rotation relationship, and the selection box can be implemented as any Shapes, such as squares, rectangles, triangles, polygons and other arbitrary shapes, cut the corresponding n structural units through the selection box (shown as a dotted line in the figure) to obtain structural units A 1 , A 2 , A 3 ,..., An -1 , An , in this way, the structural units A1 , A2 , A3 ,..., An-1 , An can be polarization independent as a whole.
  • Shapes such as squares, rectangles, triangles, polygons and other arbitrary shapes
  • FIGS. 9A to 9C illustrate a schematic diagram of the cropping design of multiple structural units in the light modulation layer of the spectrum chip according to the second embodiment of the present application, that is, the three structural units are rotated by 60° in sequence, and then use selection boxes to respectively By cutting out new structural units A 1 , A 2 and A 3 , the structural units A 1 , A 2 and A 3 as a whole can be polarization independent.
  • FIG. 10 illustrates a schematic diagram of a structural unit obtained through the cutting design shown in FIGS. 9A to 9C .
  • FIG. 10 there are three structural units, and the number, shape, and structure of the micro-nano structural units in the three structural units are the same, and they are obtained by rotating 60° in sequence.
  • the micro-nano structural units of the three structural units are all arranged periodically.
  • FIG. 11 illustrates a schematic diagram of the optimized arrangement of micro-nano structures in the structural unit shown in FIG. 10 .
  • the micro-nano structure with an area of less than or equal to 50% is removed, and/or, Micro-nano structures with an area greater than or equal to 50% are supplemented or left alone. Due to the correction of the incomplete structure, the corresponding sub-structural units are different, but it can be regarded that the corresponding sub-structural units still have a rotation angle ⁇ relationship between the sub-structural units.
  • the incomplete structure at the edge of each structural unit needs to be removed or supplemented, this causes the number of micro-nano structures included in each structural unit to change, and the number of micro-nano structures at the edge changes.
  • the structure and shape of micro-nano structures also change.
  • the number, shape and structure of the micro-nano structural units included in the structural units should be exactly the same. Therefore, in this case, even if the incomplete structure at the edge is removed or supplemented, it is considered that the arrangement of the micro-nano structural units of the structural unit is consistent.
  • each structural unit has the same outline, and the structural unit includes a plurality of micro-nano structural units, and the micro-nano structural units are arranged in a certain period. .
  • each micro-nano structural unit has a corresponding lattice translation vector, and the lattice translation vector includes a linearly independent vector in space. That is, starting from a set of points, the entire micro-nano structure can be generated through the lattice translation vector. unit, that is, the micro-nano structural units are densely packed along the lattice translation vector to form the structural unit.
  • the micro-nano structural unit can be implemented as a micro-nano structure. As shown in Figure 5, a micro-nano structure constitutes a micro-nano structural unit. The corresponding arrow represents the vector direction, and the rectangular frame can be understood as a crystal lattice.
  • micro-nano structural unit can also be multiple identical micro-nano structures, or multiple different types of micro-nano structures, as shown in Figure 6.
  • the corresponding arrows represent vector directions, and the square frame can be understood as a crystal lattice.
  • FIG. 12 illustrates a schematic diagram of a micro-nano structural unit including one micro-nano structure according to the second embodiment of the present application.
  • FIG. 13 illustrates a schematic diagram of a micro-nano structural unit including a plurality of micro-nano structures according to the second embodiment of the present application.
  • the micro-nano structural unit includes a micro-nano structure, the micro-nano structure constitutes a lattice, the lattice has a lattice translation vector, in In the structural unit, the plurality of micro-nano structural units are densely packed according to the lattice translation vector.
  • the micro-nano structural unit includes a plurality of micro-nano structures, the multiple micro-nano structures constitute a lattice, and the lattice has a lattice translation vector , in the structural unit, the plurality of micro-nano structural units are densely paved according to the lattice translation vector.
  • the plurality of micro-nano structures include the same type of micro-nano structures and/or different types of micro-nano structures.
  • micro-nano structural units are densely packed according to the lattice translation vector. There may be edges of the structural units that make individual micro-nano structures incomplete in the structural units. This The micro-nano structures with an area of less than or equal to 50% can be removed, and the micro-nano structures with an area of greater than or equal to 50% can optionally be supplemented or left untreated.
  • Figure 14 illustrates a schematic diagram of densely paving multiple micro-nano structural units based on lattice translation vectors according to the second embodiment of the present application.
  • the second structural unit is rotated 60° relative to the lattice translation vector of the micro-nano structural unit corresponding to the first structural unit
  • the third structural unit is rotated relative to the second
  • the lattice translation vector of the micro-nano structural unit corresponding to the structural unit is rotated by 60°.
  • the micro-nano structural units are arranged along the lattice translation vector, and the dense paving corresponds to the entire structural unit.
  • each micro-nano structural unit in the plurality of micro-nano structural units of the two structural units may have a rotation angle ⁇ between them.
  • the lattice composed of multiple micro-nano structural units has multi-dimensional rotational symmetry (when the structural unit is understood as a photonic crystal, it can be considered that the lattice of the micro-nano structural unit has multi-dimensional rotation. symmetry), such as four-dimensional rotational symmetry. That is to say, the crystal lattice of a micro-nano structural unit composed of multiple micro-nano structures is square and has four-dimensional rotational symmetry.
  • the structural unit is composed of multiple micro-nano structural units
  • the crystal lattice of a single micro-nano structural unit can be The grid translation vector can be rotated 90°, as shown in Figure 15.
  • Figure 15 illustrates a schematic diagram of a single micro-nano structural unit rotating to form a structural unit according to the second embodiment of the present application.
  • FIG. 16 illustrates a schematic diagram of a single micro-nano structure rotating to form a structural unit according to the second embodiment of the present application.
  • the lattice of the micro-nano structural unit has six-dimensional rotational symmetry, it can be implemented as three micro-nano structural units constituting the structural unit, in which the lattice translation vector is rotated by 60°. If the structural unit is composed of two micro-nano structural units, the lattice translation vector is rotated 90°, as shown in Figures 17 and 18.
  • FIG. 17 illustrates a schematic diagram of a structural unit composed of three micro-nano structural units with a lattice translation vector rotated by 60° according to the second embodiment of the present application.
  • FIG. 18 illustrates a schematic diagram of a structural unit composed of two micro-nano structural units with a lattice translation vector rotated by 90° according to the second embodiment of the present application.
  • FIG. 19A to Figure 19C respectively The figure shows a schematic diagram of three-dimensional, four-dimensional and six-dimensional rotationally symmetric micro-nano structural units according to the second embodiment of the present application.
  • the spectrum chip according to the embodiment of the present application may include the light modulation layer and the image sensor according to the embodiment of the present application as described above, wherein the light modulation layer is disposed on the photosensitive path of the image sensor.
  • the structural unit of the light modulation layer may have the configuration of the structural unit of the light modulation layer according to the embodiment of the present application as described above, which will not be described again here.
  • the spectrum chip according to the embodiment of the present application includes the light modulation layer of the spectrum chip as described above, and an image sensor.
  • the light modulation layer is disposed on the photosensitive path of the image sensor, and the structural unit is connected to the light sensing path of the image sensor. corresponds to the physical pixels of the image sensor.
  • a structural unit composed of two sub-structural units is taken as an example, but this does not limit the application.
  • the structural unit of the light modulation layer of the spectrum chip according to the embodiment of the present application may include multiple sub-structural units, and , the structural unit conforms to the above design, and can achieve polarization independence.
  • FIG. 20 illustrates a schematic diagram of a first example of a stacked structure of a spectrum chip according to an embodiment of the present application.
  • the spectrum chip 200 according to the embodiment of the present application includes a light modulation layer 210 and an image sensor 220.
  • the light modulation layer 210 is disposed on the photosensitive path of the image sensor 220.
  • the light modulation layer 210 It includes at least one structural unit, and the structural unit includes n sub-structural units.
  • Each of the sub-structural units includes at least one micro-nano structure.
  • the micro-nano structure can be a modulation hole, a modulation column or a modulation line. Taking the modulation hole as an example, it can be a round hole, a square hole, or a triangular hole. , polygonal holes or irregular holes (similar to modulation columns).
  • the spectrum chip may further include a light-transmitting layer 230 located between the light modulation layer 210 and the image sensor 220.
  • the light-transmitting layer 230 is formed on the surface of the image sensor 220, and Having a flat upper surface, the light modulation layer 210 is formed on the flat upper surface of the light-transmitting layer 230 .
  • the flat upper surface of the light-transmitting layer 230 is beneficial to the processing of the light modulation layer 210 to a certain extent.
  • the spectrum chip according to the embodiment of the present application further includes a light-transmitting layer located between the light modulation layer and the image sensor, and the light-transmitting layer is formed on the surface of the image sensor and Has a flat upper surface.
  • FIG. 21 illustrates a schematic diagram of a second example of a stacked structure of a spectrum chip according to an embodiment of the present application.
  • the spectrum chip according to the embodiment of the present application may also include a protective layer 240 in addition to the light modulation layer 210 , the image sensor 220 and the light-transmitting layer 230 .
  • the protective layer 240 is located on the upper surface of the light modulation layer 210 to protect the light modulation layer 210 .
  • the modulation hole may be at least partially filled with a filling material.
  • the spectrum chip according to the embodiment of the present application further includes a protective layer located on the upper surface of the light modulation layer for protecting the light modulation layer.
  • the micro-nano structure of the structural unit of the light modulation layer is a modulation hole, and the modulation hole is at least partially filled with a filling material.
  • Figure 22 illustrates a schematic diagram of the configuration of two light modulation layers of a spectrum chip according to an embodiment of the present application.
  • a spectrum chip according to an embodiment of the present application includes multiple light modulation layers, such as two light modulation layers, located on the photosensitive path of the image sensor.
  • the spectrum chip 300 includes a first light modulation layer 310 and a second light modulation layer 320.
  • the first light modulation layer 310 and the second light modulation layer 320 are sequentially formed on the photosensitive surface of the image sensor 330.
  • the incident light passes through the first light modulation layer 310 and the second light modulation layer 320 in sequence and is modulated before reaching the image sensor 330 .
  • the structural unit can be understood as the corresponding areas of the first light modulation layer 310 and the second light modulation layer 320 jointly form a structural unit.
  • four physical pixels correspond to one structural unit.
  • four physical pixels correspond to one structural unit.
  • the modulation areas of the first light modulation layer 310 and the second light modulation layer 320 corresponding to the pixels constitute a structural unit, that is, the incident light passes through the modulation area of the first light modulation layer 310 and enters the modulation area of the second light modulation layer 320, After being modulated to reach the corresponding four physical pixels, the corresponding modulation area of the first light modulation layer 310 and the second light modulation layer 320 can be defined as a structural unit.
  • the second sub-structural unit is rotated 90 degrees based on the first sub-structural unit. degree formed.
  • the structural unit is composed of a first light modulation layer and a second light modulation layer, so both the first sub-structural unit and the second sub-structural unit are composed of a first light modulation layer and a second light modulation layer.
  • the light modulation layer is composed together. That is, each light modulation layer of the first sub-structural unit needs to be rotated 90° to obtain the second sub-structural unit.
  • first sub-structural unit and the second sub-structural unit are in a 90° relationship with each other; it may also refer to a 90° relationship between the micro-nano structure of the first sub-structural unit and the micro-nano structure unit of the second sub-structural unit.
  • the light modulation layer includes a first light modulation layer and a second light modulation layer as the light modulation layer of the spectrum chip as described above, and the first light modulation layer
  • the first light modulation layer and the second light modulation layer are disposed on the photosensitive path of the image sensor, and the structural units of the first light modulation layer and the second light modulation layer are in phase with the physical pixels of the image sensor. correspond.
  • the spectrum chip may further include a light-transmitting layer 340, the light-transmitting layer 340 is located between the image sensor 330 and the second light modulation layer 320, the light-transmitting layer 340 forms On the surface of the image sensor 330 and having a flat upper surface, the second light modulation layer 320 is formed on the flat upper surface of the light-transmitting layer 340 .
  • the flat upper surface of the light-transmitting layer 340 is beneficial to the processing of the second light modulation layer 320 to a certain extent.
  • the spectrum chip may further include a connection layer 350 located between the first light modulation layer 310 and the second light modulation layer 320 for connecting the first light modulation layer 310 and the second light modulation layer 320 .
  • the connection layer 350 has a flat upper surface.
  • the spectrum chip includes a protective layer 360 located on the upper surface of the first light modulation layer 310 to protect the first light modulation layer 310 .
  • the modulation holes are filled, and the filling material can be a low refractive index material, so
  • the low refractive index material can also be understood as a material with a refractive index lower than that of the light modulation layer, as shown in Figure 23.
  • FIG. 23 illustrates a schematic diagram of a third example of a stacked structure of a spectrum chip according to an embodiment of the present application.
  • the spectrum chip according to the embodiment of the present application further includes a protective layer 360, which is located on the upper surface of the first light modulation layer and used to protect the first light modulation layer.
  • the micro-nano structure of the structural unit of the first light modulation layer and the second light modulation layer is a modulation hole, and the modulation hole is at least partially filled. Material filling.
  • the light-transmitting layer 340 , the connection layer 350 and the protective layer 360 may be made of the same material, and the refractive index of the corresponding material is lower than that of the first light modulation layer 310 and the second light modulation layer 320 refractive index.
  • the light-transmitting layer 340, the connection layer 350 and the protective layer 360 are formed of the first material
  • the first light modulation layer 310 and the The second light modulation layer 320 is formed of a second material
  • the first refractive index of the first material is lower than the second refractive index of the second material.
  • the spectrum chip 400 may include more light modulation layers, for example, three light modulation layers, that is, a first light modulation layer 410, a second light modulation layer 420, and a third light modulation layer 430. , as shown in Figure 24.
  • the spectrum chip 500 may also include four light modulation layers, that is, a first light modulation layer 510, a second light modulation layer 520, a third light modulation layer 530 and a fourth light modulation layer 540, as shown in Figure 25 Show.
  • the composition and design principle of its structural unit are similar to the above-mentioned example containing two light modulation layers.
  • FIG. 24 illustrates a schematic diagram of a fourth example of a stacked structure of a spectrum chip according to an embodiment of the present application.
  • Figure 25 illustrates a schematic diagram of a fifth example of a stacked structure of a spectrum chip according to an embodiment of the present application.
  • the light modulation layer includes more than three light modulation layers as the light modulation layer of the spectrum chip as described above, and the three or more light modulation layers are provided On the photosensitive path of the image sensor, and the structural units of the three or more light modulation layers correspond to the physical pixels of the image sensor, that is, the incident light passes through the structural units of each light modulation layer in sequence Then, it is modulated and received by the corresponding physical pixel.
  • the structural unit corresponding to the spectrum chip can be composed of two sub-structural units, or can be composed of multiple sub-structural units. Its structural design complies with the description of the above embodiments, which can achieve polarization independence.
  • the spectrum chip 600 can include a non-modulation area 601 and a modulation area 602.
  • the non-modulation area is not provided with structural units, and the modulation area can be provided with the same structural units as above or a combination thereof, such as As shown in Figure 26.
  • FIG. 26 illustrates a schematic diagram illustrating a sixth example of a stacked structure of a spectrum chip according to an embodiment of the present application.
  • the configuration of each layer in Fig. 24, Fig. 25 and Fig. 26 is the same as that of Fig. 23 as described above, and will not be described again here.
  • the spectrum chip according to the embodiment of the present application includes a non-modulation area and a modulation area arranged on the photosensitive path of the image sensor.
  • the non-modulation area does not have the structural unit as described above, and the modulation area has Structural units as described above or combinations thereof.
  • the spectrum chip generally includes multiple structural units, and each structural unit is distributed on the photosensitive path of the image sensor.
  • each structural unit includes multiple sub-structural units, and there is a predetermined angle ⁇ between each sub-structural unit. That is, the sub-structural unit should be able to connect with another sub-structure after being rotated by the predetermined angle ⁇ . unit phase overlapping.
  • the sub-structural unit is rotated 90°.
  • the sub-structural unit is rotated by a predetermined angle ⁇ in each light modulation layer. It can also be a predetermined angle ⁇ between the micro-nano structural units of the sub-structural units.
  • each component or each step can be decomposed and/or recombined. These decompositions and/or recombinations shall be considered equivalent versions of this application.

Abstract

The present application relates to a light modulation layer of a spectrum chip, and the spectrum chip comprising same. The light modulation layer of the spectrum chip comprises one or more structural units. Each structural unit comprises a plurality of structural subunits, and the number, shape and structure of micro-nano structures of each structural subunit in each structural unit are consistent among the plurality of structural subunits. The positions of the micro-nano structures in the structural subunits correspondingly arranged, and a rotation angle θ is formed between every two of the plurality of structural subunits in each structural unit, and satisfies equation (I), wherein m and n are positive integers. In this way, the sensitivity of the transmission spectrum of the spectrum chip to polarization can be solved.

Description

光谱芯片的光调制层和光谱芯片The light modulation layer of the spectrum chip and the spectrum chip 技术领域Technical field
本申请涉及光谱技术领域,更为具体地说,涉及一种光谱芯片的光调制层和包括其的光谱芯片。The present application relates to the field of spectrum technology, and more specifically, to a light modulation layer of a spectrum chip and a spectrum chip including the same.
背景技术Background technique
光与物质发生相互作用,如吸收、散射、荧光、拉曼等,会产生特定光谱,而每种物质的光谱,都是独一无二的。因此,光谱信息可以说是万物的“指纹”。光谱仪能够直接检测物质的光谱信息,得到被测目标的存在状况与物质成分,是材料表征、化学分析等领域重要的测试仪器之一。The interaction between light and matter, such as absorption, scattering, fluorescence, Raman, etc., will produce a specific spectrum, and the spectrum of each substance is unique. Therefore, spectral information can be said to be the “fingerprint” of all things. The spectrometer can directly detect the spectral information of a substance and obtain the existence status and material composition of the measured target. It is one of the important testing instruments in the fields of material characterization and chemical analysis.
光谱仪往往对不同偏振的入射光有不同的响应,而在实际使用中,由于无法事先知道待测光的偏振状态,因此在实际使用中需要在光路中增加偏振片,不仅增加了成本,难以微型化且无法保证性能的稳定性。Spectrometers often have different responses to incident light of different polarizations. In actual use, since the polarization state of the light to be measured cannot be known in advance, polarizers need to be added to the optical path. This not only increases the cost, but also makes it difficult to miniaturize. ization and performance stability cannot be guaranteed.
因此,期望提供一种用于消除偏振影响的改进的光谱芯片。Therefore, it is desirable to provide an improved spectroscopic chip for eliminating the effects of polarization.
发明内容Contents of the invention
本申请实施例提供了一种光谱芯片的光调制层和包括其的光谱芯片,其通过包含具有预定角度的子结构单元的结构单元,来解决光谱芯片的透射谱对偏振的敏感性。Embodiments of the present application provide a light modulation layer of a spectrum chip and a spectrum chip including the same, which solves the sensitivity of the transmission spectrum of the spectrum chip to polarization by including structural units with sub-structural units having predetermined angles.
根据本申请的一方面,提供了一种光谱芯片的光调制层,包括:一个或多个结构单元,每个结构单元包括n个子结构单元,且所述每个结构单元内的每个子结构单元所具有的微纳结构的数量、形状、结构对于所述多个子结构单元一致,且所述微纳结构相对于所述子结构单元的位置相互对应,并且,所述每个结构单元内的n个子结构单元中的每两个子结构单元之间具有旋转角度θ,满足:
According to one aspect of the present application, a light modulation layer of a spectrum chip is provided, including: one or more structural units, each structural unit includes n sub-structural units, and each sub-structural unit within each structural unit The number, shape, and structure of the micro-nano structures are consistent for the plurality of sub-structural units, and the positions of the micro-nano structures relative to the sub-structural units correspond to each other, and n in each structural unit There is a rotation angle θ between every two sub-structural units in the sub-structural unit, which satisfies:
其中m和n为正整数。 where m and n are positive integers.
在上述光谱芯片的光调制层中,m等于1,且n大于等于2。In the light modulation layer of the above spectrum chip, m is equal to 1, and n is greater than or equal to 2.
在上述光谱芯片的光调制层中,每个子结构单元包括至少一种微纳结构。In the light modulation layer of the above-mentioned spectrum chip, each sub-structural unit includes at least one micro-nano structure.
在上述光谱芯片的光调制层中,每个子结构单元包括至少两种微纳结构,且所述微纳结构不规则排布。In the light modulation layer of the above spectrum chip, each sub-structural unit includes at least two micro-nano structures, and the micro-nano structures are irregularly arranged.
在上述光谱芯片的光调制层中,所述结构单元包括第一子结构单元和第二子结构单元,且所述第二子结构单元以所述第一子结构单元90度旋转形成。In the light modulation layer of the above spectrum chip, the structural unit includes a first sub-structural unit and a second sub-structural unit, and the second sub-structural unit is formed by rotating the first sub-structural unit 90 degrees.
根据本申请的另一方面,提供了一种光谱芯片的光调制层,包括:n个结构单元,每个结构单元具有多个微纳结构单元,所述微纳结构单元按照周期规则排布以使得所述结构单元实现为光子晶体,且每个所述结构单元所具有的微纳结构单元的排布对于所述n个结构单元一致,且所述多个微纳结构单元相对于所述结构单元的位置相互对应,并且,所述n个结构单元中的每两个结构单元的多个微纳结构单元之间具有旋转角度θ,满足:
According to another aspect of the present application, a light modulation layer of a spectrum chip is provided, including: n structural units, each structural unit having a plurality of micro-nano structural units, and the micro-nano structural units are arranged according to periodic rules. The structural unit is implemented as a photonic crystal, and the arrangement of the micro-nano structural units of each structural unit is consistent for the n structural units, and the multiple micro-nano structural units are relative to the structure. The positions of the units correspond to each other, and there is a rotation angle θ between the multiple micro-nano structural units of each two structural units in the n structural units, which satisfies:
其中m和n为正整数。where m and n are positive integers.
在上述光谱芯片的光调制层中,所述n个结构单元中的每两个结构单元的多个微纳结构单元之间具有旋转角度θ包括:所述两个结构单元的所述多个微纳结构单元整体上具有旋转角度θ。In the light modulation layer of the above spectrum chip, the rotation angle θ between the multiple micro-nano structural units of each two structural units in the n structural units includes: the multiple micro-nano structural units of the two structural units. The nanostructure unit has a rotation angle θ as a whole.
在上述光谱芯片的光调制层中,对于每个所述结构单元的边缘的不完整结构,对面积小于等于50%的微纳结构进行去除,和/或,对面积大于等于50%的微纳结构进行补足或不做处理。In the light modulation layer of the above-mentioned spectrum chip, for the incomplete structure at the edge of each structural unit, remove micro-nano structures with an area of less than or equal to 50%, and/or remove micro-nano structures with an area of greater than or equal to 50%. The structure is complemented or left alone.
在上述光谱芯片的光调制层中,所述微纳结构单元包括一个微纳结构,所述微纳结构构成晶格,所述晶格具有晶格平移矢量,在所述结构单元中按照所述晶格平移矢量对所述多个微纳结构单元进行密铺。In the light modulation layer of the above spectrum chip, the micro-nano structural unit includes a micro-nano structure, the micro-nano structure constitutes a lattice, the lattice has a lattice translation vector, in the structural unit according to the The lattice translation vector densely tiles the multiple micro-nano structural units.
在上述光谱芯片的光调制层中,所述微纳结构单元包括多个微纳结构,所述多个微纳结构构成晶格,所述晶格具有晶格平移矢量,在所述结构单元中按照所述晶格平移矢量对所述多个微纳结构单元进行密铺。In the light modulation layer of the above-mentioned spectrum chip, the micro-nano structural unit includes a plurality of micro-nano structures, the multiple micro-nano structures constitute a lattice, and the lattice has a lattice translation vector. In the structural unit The plurality of micro-nano structural units are densely packed according to the lattice translation vector.
在上述光谱芯片的光调制层中,所述多个微纳结构包括相同类型的微纳结构和/或不同类型的微纳结构。 In the light modulation layer of the above spectrum chip, the plurality of micro-nano structures include the same type of micro-nano structures and/or different types of micro-nano structures.
在上述光谱芯片的光调制层中,所述n个结构单元中的每两个结构单元的多个微纳结构单元之间具有旋转角度θ包括:所述两个结构单元的所述多个微纳结构单元中的每个微纳结构单元之间具有旋转角度θ。In the light modulation layer of the above spectrum chip, the rotation angle θ between the multiple micro-nano structural units of each two structural units in the n structural units includes: the multiple micro-nano structural units of the two structural units. There is a rotation angle θ between each micro-nano structural unit in the nanostructural unit.
在上述光谱芯片的光调制层中,所述微纳结构单元包括一个或多个微纳结构。In the light modulation layer of the above spectrum chip, the micro-nano structural unit includes one or more micro-nano structures.
在上述光谱芯片的光调制层中,所述微纳结构单元包括多个微纳结构,且所述微纳结构单元为至少三维旋转对称。In the light modulation layer of the above spectrum chip, the micro-nano structural unit includes a plurality of micro-nano structures, and the micro-nano structural unit is at least three-dimensional rotationally symmetrical.
在上述光谱芯片的光调制层中,所述微纳结构单元中的所述多个微纳结构彼此呈60°或者90°旋转。In the light modulation layer of the above spectrum chip, the plurality of micro-nano structures in the micro-nano structural unit are rotated by 60° or 90° with each other.
根据本申请的又一方面,提供了一种光谱芯片,包括:如上所述的光调制层;和,图像传感器,所述光调制层设置于所述图像传感器的感光路径上,且所述结构单元与所述图像传感器的物理像素相对应。According to another aspect of the present application, a spectrum chip is provided, including: a light modulation layer as described above; and an image sensor, the light modulation layer is disposed on the photosensitive path of the image sensor, and the structure Cells correspond to physical pixels of the image sensor.
在如上所述的光谱芯片中,进一步包括:透光层,所述透光层位于所述光调制层和所述图像传感器之间,所述透光层形成于所述图像传感器的表面并具有平整的上表面。In the spectrum chip as described above, further comprising: a light-transmitting layer located between the light modulation layer and the image sensor, the light-transmitting layer being formed on the surface of the image sensor and having Flat upper surface.
在如上所述的光谱芯片中,进一步包括:保护层,所述保护层位于所述光调制层的上表面,用于保护所述光调制层。The spectrum chip as described above further includes: a protective layer located on the upper surface of the light modulation layer for protecting the light modulation layer.
在如上所述的光谱芯片中,所述光调制层的所述结构单元的微纳结构为调制孔,且所述调制孔至少部分被填充材料填充。In the spectrum chip as described above, the micro-nano structure of the structural unit of the light modulation layer is a modulation hole, and the modulation hole is at least partially filled with a filling material.
在如上所述的光谱芯片中,所述光调制层包括作为如上所述的光调制层的第一光调制层和第二光调制层,且所述第一光调制层和所述第二光调制层设置于所述图像传感器的感光路径上,且所述第一光调制层和所述第二光调制层的所述结构单元与所述图像传感器的物理像素相对应。In the spectrum chip as described above, the light modulation layer includes a first light modulation layer and a second light modulation layer as the light modulation layer as described above, and the first light modulation layer and the second light modulation layer The modulation layer is disposed on the photosensitive path of the image sensor, and the structural units of the first light modulation layer and the second light modulation layer correspond to physical pixels of the image sensor.
在如上所述的光谱芯片中,进一步包括:透光层,所述透光层位于所述图像传感器和所述第二光调制层之间,所述透光层形成于所述图像传感器的表面并具有平整的上表面。In the spectrum chip as described above, further comprising: a light-transmitting layer located between the image sensor and the second light modulation layer, the light-transmitting layer being formed on the surface of the image sensor and has a flat upper surface.
在如上所述的光谱芯片中,进一步包括:连接层,所述连接层位于所述第一光调制层和所述第二光调制层之间,用于连接所述第一光调制层和所述第二光调制层。In the spectrum chip as described above, it further includes: a connection layer located between the first light modulation layer and the second light modulation layer and used to connect the first light modulation layer and the second light modulation layer. The second light modulation layer.
在如上所述的光谱芯片中,进一步包括:保护层,所述保护层位于所述第一光调制层的上表面,用于保护所述第一光调制层。 The spectrum chip as described above further includes: a protective layer located on the upper surface of the first light modulation layer for protecting the first light modulation layer.
在如上所述的光谱芯片中,所述第一光调制层和所述第二光调制层的所述结构单元的微纳结构为调制孔,且所述调制孔至少部分被填充材料填充。In the spectrum chip as described above, the micro-nano structure of the structural unit of the first light modulation layer and the second light modulation layer is a modulation hole, and the modulation hole is at least partially filled with a filling material.
在如上所述的光谱芯片中,所述透光层、所述连接层和所述保护层由第一材料形成,所述第一光调制层和所述第二光调制层由第二材料形成,且所述第一材料的第一折射率低于所述第二材料的第二折射率。In the spectrum chip as described above, the light-transmitting layer, the connecting layer and the protective layer are formed of a first material, and the first light modulation layer and the second light modulation layer are formed of a second material. , and the first refractive index of the first material is lower than the second refractive index of the second material.
在如上所述的光谱芯片中,所述光调制层包括作为如上所述的光调制层的三个以上的光调制层,所述三个以上的光调制层设置于所述图像传感器的感光路径上,且所述三个以上的光调制层的所述结构单元与所述图像传感器的物理像素相对应。In the spectrum chip as described above, the light modulation layer includes three or more light modulation layers as the light modulation layer as described above, and the three or more light modulation layers are disposed on the photosensitive path of the image sensor. on, and the structural units of the three or more light modulation layers correspond to physical pixels of the image sensor.
在如上所述的光谱芯片中,包括:设置于所述图像传感器的感光路径上的非调制区域和调制区域,所述非调制区域不具有如上所述的结构单元,且所述调制区域具有如上所述的结构单元或其组合。In the spectrum chip as described above, it includes: a non-modulation area and a modulation area arranged on the photosensitive path of the image sensor, the non-modulation area does not have the above structural unit, and the modulation area has the above The structural units or combinations thereof.
本申请实施例提供的光谱芯片的光调制层和包括其的光谱芯片,其通过包含具有预定角度的子结构单元的结构单元,来解决光谱芯片的透射谱对偏振的敏感性。The light modulation layer of the spectrum chip and the spectrum chip including the same provided by the embodiments of the present application solve the sensitivity of the transmission spectrum of the spectrum chip to polarization by including structural units with sub-structural units having predetermined angles.
附图说明Description of drawings
通过阅读下文优选的具体实施方式中的详细描述,本申请各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。说明书附图仅用于示出优选实施方式的目的,而并不认为是对本申请的限制。显而易见地,下面描述的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。而且在整个附图中,用相同的附图标记表示相同的部件。Various other advantages and benefits of the present application will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings in the description are only for the purpose of illustrating preferred embodiments and are not considered to be limitations of the present application. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without exerting creative efforts. Also throughout the drawings, the same parts are designated by the same reference numerals.
图1图示了根据本申请实施例的光谱芯片的示意图。Figure 1 illustrates a schematic diagram of a spectrum chip according to an embodiment of the present application.
图2图示了根据本申请第一实施例的光谱芯片的结构单元的第一配置示例的示意图。FIG. 2 illustrates a schematic diagram of a first configuration example of a structural unit of a spectrum chip according to the first embodiment of the present application.
图3图示了根据本申请第一实施例的光谱芯片的结构单元的第二配置示例的示意图。FIG. 3 illustrates a schematic diagram of a second configuration example of the structural unit of the spectrum chip according to the first embodiment of the present application.
图4图示了根据本申请第一实施例的光谱芯片的结构单元的第三配置示例的示意图。FIG. 4 illustrates a schematic diagram of a third configuration example of the structural unit of the spectrum chip according to the first embodiment of the present application.
图5图示了根据本申请第一实施例的结构单元与图像传感器上的物理像 素的对应关系的示例。Figure 5 illustrates the structural unit and the physical image on the image sensor according to the first embodiment of the present application. Examples of correspondences between elements.
图6图示了根据本申请第一实施例的光谱芯片的结构单元的优选配置的示意图。FIG. 6 illustrates a schematic diagram of a preferred configuration of structural units of a spectrum chip according to the first embodiment of the present application.
图7A到图7C图示了如图6所示的结构单元的优选配置的消除光偏振影响的仿真验证的示意图。7A to 7C illustrate schematic diagrams of simulation verification of eliminating the influence of light polarization of the preferred configuration of the structural unit shown in FIG. 6 .
图8图示了根据本申请第一实施例的光谱芯片的光调制层的优选配置的示意图。FIG. 8 illustrates a schematic diagram of a preferred configuration of the light modulation layer of the spectrum chip according to the first embodiment of the present application.
图9A到图9C图示了根据本申请第二实施例的光谱芯片的光调制层中的多个结构单元的裁剪设计示意图。9A to 9C illustrate a schematic diagram of the cropping design of multiple structural units in the light modulation layer of the spectrum chip according to the second embodiment of the present application.
图10图示了通过如图9A到图9C所示的裁剪设计获得的结构单元的示意图。Figure 10 illustrates a schematic diagram of a structural unit obtained by the cutting design shown in Figures 9A to 9C.
图11图示了图10所示的结构单元中的微纳结构的优化设置的示意图。FIG. 11 illustrates a schematic diagram of the optimized arrangement of micro-nano structures in the structural unit shown in FIG. 10 .
图12图示了根据本申请第二实施例的包括一个微纳结构的微纳结构单元的示意图。FIG. 12 illustrates a schematic diagram of a micro-nano structure unit including a micro-nano structure according to the second embodiment of the present application.
图13图示了根据本申请第二实施例的包括多个微纳结构的微纳结构单元的示意图。FIG. 13 illustrates a schematic diagram of a micro-nano structural unit including a plurality of micro-nano structures according to the second embodiment of the present application.
图14图示了根据本申请第二实施例的基于晶格平移矢量对多个微纳结构单元进行密铺的示意图。Figure 14 illustrates a schematic diagram of densely paving multiple micro-nano structural units based on lattice translation vectors according to the second embodiment of the present application.
图15图示了根据本申请第二实施例的单个微纳结构单元旋转构成结构单元的示意图。Figure 15 illustrates a schematic diagram of a single micro-nano structural unit rotating to form a structural unit according to the second embodiment of the present application.
图16图示了根据本申请第二实施例的单个微纳结构旋转构成结构单元的示意图。Figure 16 illustrates a schematic diagram of a single micro-nano structure rotating to form a structural unit according to the second embodiment of the present application.
图17图示了根据本申请第二实施例的晶格平移矢量旋转60°的三个微纳结构单元构成结构单元的示意图。FIG. 17 illustrates a schematic diagram of a structural unit composed of three micro-nano structural units with a lattice translation vector rotated by 60° according to the second embodiment of the present application.
图18图示了根据本申请第二实施例的晶格平移矢量旋转90°的两个微纳结构单元构成结构单元的示意图。FIG. 18 illustrates a schematic diagram of a structural unit composed of two micro-nano structural units with a lattice translation vector rotated by 90° according to the second embodiment of the present application.
图19A到图19C分别图示了根据本申请第二实施例的三维、四维和六维旋转对称的微纳结构单元的示意图。19A to 19C respectively illustrate schematic diagrams of three-dimensional, four-dimensional and six-dimensional rotationally symmetric micro-nano structural units according to the second embodiment of the present application.
图20图示了根据本申请实施例的光谱芯片的层叠结构的第一示例的示意图。FIG. 20 illustrates a schematic diagram of a first example of a stacked structure of a spectrum chip according to an embodiment of the present application.
图21图示了根据本申请实施例的光谱芯片的层叠结构的第二示例的示 意图。FIG. 21 illustrates a second example of a stacked structure of a spectrum chip according to an embodiment of the present application. intention.
图22图示了根据本申请实施例的光谱芯片的两个光调制层的配置的示意图。Figure 22 illustrates a schematic diagram of the configuration of two light modulation layers of a spectrum chip according to an embodiment of the present application.
图23图示了根据本申请实施例的光谱芯片的层叠结构的第三示例的示意图。FIG. 23 illustrates a schematic diagram of a third example of a stacked structure of a spectrum chip according to an embodiment of the present application.
图24图示了根据本申请实施例的光谱芯片的层叠结构的第四示例的示意图。FIG. 24 illustrates a schematic diagram of a fourth example of a stacked structure of a spectrum chip according to an embodiment of the present application.
图25图示了根据本申请实施例的光谱芯片的层叠结构的第五示例的示意图。FIG. 25 illustrates a schematic diagram of a fifth example of a stacked structure of a spectrum chip according to an embodiment of the present application.
图26图示了根据本申请实施例的光谱芯片的层叠结构的第六示例的示意图。FIG. 26 illustrates a schematic diagram of a sixth example of a stacked structure of a spectrum chip according to an embodiment of the present application.
具体实施方式Detailed ways
下面,将参考附图详细地描述根据本申请的示例实施例。显然,所描述的实施例仅仅是本申请的一部分实施例,而不是本申请的全部实施例,应理解,本申请不受这里描述的示例实施例的限制。Hereinafter, example embodiments according to the present application will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. It should be understood that the present application is not limited by the example embodiments described here.
申请概述Application Overview
随着计算机技术的发展,最近几年出现了一种新的光谱仪类型:计算重建型光谱仪,其通过计算来近似甚至重构入射光的光谱。计算重构型光谱仪可以相对较佳地解决因小型化而导致检测性能下降的问题。With the development of computer technology, a new type of spectrometer has emerged in recent years: computational reconstruction spectrometer, which approximates or even reconstructs the spectrum of incident light through calculation. Computationally reconstructed spectrometers can relatively better solve the problem of reduced detection performance due to miniaturization.
在计算重构型光谱装置(包含光谱仪)中,光谱芯片是核心部件。图1图示了根据本申请实施例的光谱芯片的示意图。如图1所示,本申请实施例的光谱芯片100包括光调制层110、图像传感器120和数据处理单元130。所述光调制层110位于所述图像传感器120的感光路径上,用于对入射光进行宽谱调制以得到调制后的光信号。所述图像传感器120用于接收所调制后的光信号,对所述调制后的光信号进行处理以得到被测目标的原始光谱信息。例如,所述图像传感器120可以是CMOS图像传感器(CIS)、CCD、阵列光探测器等。另外,所述光谱芯片100还包括数据处理单元130,所述数据处理单元130可以是MCU、CPU、GPU、FPGA、NPU、ASIC等处理单元,其可以将图像传感器生成的数据进行处理。 In computationally reconstructed spectroscopic devices (including spectrometers), the spectrum chip is the core component. Figure 1 illustrates a schematic diagram of a spectrum chip according to an embodiment of the present application. As shown in FIG. 1 , the spectrum chip 100 in the embodiment of the present application includes a light modulation layer 110 , an image sensor 120 and a data processing unit 130 . The light modulation layer 110 is located on the photosensitive path of the image sensor 120 and is used to perform broad spectrum modulation of incident light to obtain a modulated light signal. The image sensor 120 is configured to receive the modulated optical signal, and process the modulated optical signal to obtain original spectral information of the measured target. For example, the image sensor 120 may be a CMOS image sensor (CIS), CCD, array light detector, etc. In addition, the spectrum chip 100 also includes a data processing unit 130. The data processing unit 130 can be a processing unit such as an MCU, CPU, GPU, FPGA, NPU, ASIC, etc., which can process data generated by the image sensor.
所述光调制层110通常包括以特定样式排布的多个结构单元,所述结构单元按照一定周期排列。进一步,各个结构单元由至少一微纳结构构成,所述微纳结构可以实施为孔、柱、线等结构。The light modulation layer 110 usually includes a plurality of structural units arranged in a specific pattern, and the structural units are arranged in a certain period. Furthermore, each structural unit is composed of at least one micro-nano structure, and the micro-nano structure can be implemented as a structure such as a hole, a column, or a line.
下面,将说明光谱芯片的工作原理,即,图像传感器测得光谱响应后,传入数据处理单元进行恢复计算。该过程具体描述如下:Next, the working principle of the spectrum chip will be explained. That is, after the image sensor measures the spectral response, it is transmitted to the data processing unit for recovery calculation. The process is described in detail as follows:
将入射光在不同波长λ下的强度信号记为x(λ),光调制层的透射谱曲线记为T(λ),光调制层上具有m个的结构单元,每一个结构单元的透射谱互不相同,整体来讲,光调制层可记为Ti(λ)(i=1,2,3,…,m)。每一个结构单元下方都有相应的物理像素,探测经过光调制层调制的光强bi。在本申请的特定实施例中,以一个物理像素,即一个物理像素对应一个结构单元,但是不限定于此,在其它实施例中,也可以是多个物理像素为一组对应于一个结构单元。因此,在根据本申请实施例的计算光谱装置中,至少二个结构单元构成一个“光谱像素”(可以理解为多个结构单元和对应的图像传感器构成光谱像素)。需要注意的是,所述光调制层的有效的透射谱(用以光谱恢复的透射谱,叫做有效的透射谱)Ti(λ)数量与结构单元数量可以不一致,所述滤光结构的透射谱根据识别或恢复的需求人为的按照一定规则去设置、测试、或计算获得(例如上述每个结构单元通过测试出来的透射谱就为有效的透射谱),因此所述光调制层的有效透射谱的数量可以比结构单元数量少,甚至也可能比结构单元数量多;该变形实施例中,某一个所述透射谱曲线并不一定是一个结构单元所决定。进一步,本发明可以用至少一个光谱像素去恢复光谱。The intensity signals of the incident light at different wavelengths λ are recorded as They are different from each other. Generally speaking, the light modulation layer can be recorded as Ti(λ)(i=1,2,3,...,m). There are corresponding physical pixels below each structural unit to detect the light intensity bi modulated by the light modulation layer. In the specific embodiment of the present application, one physical pixel is used, that is, one physical pixel corresponds to one structural unit, but it is not limited to this. In other embodiments, a group of multiple physical pixels may also correspond to one structural unit. . Therefore, in the computational spectrum device according to the embodiment of the present application, at least two structural units constitute a "spectral pixel" (it can be understood that multiple structural units and corresponding image sensors constitute a spectral pixel). It should be noted that the effective transmission spectrum of the light modulation layer (the transmission spectrum used for spectral recovery is called the effective transmission spectrum) number of Ti (λ) and the number of structural units may not be consistent. The transmission spectrum of the light filter structure According to the needs of identification or recovery, it is manually set, tested, or calculated according to certain rules (for example, the transmission spectrum of each structural unit mentioned above through testing is the effective transmission spectrum), so the effective transmission spectrum of the light modulation layer The number may be less than the number of structural units, or may even be greater than the number of structural units; in this variant embodiment, a certain transmission spectrum curve is not necessarily determined by one structural unit. Furthermore, the present invention can use at least one spectral pixel to restore the spectrum.
入射光的频谱分布和图像传感器的测量值之间的关系可以由下式表示:
bi=∫x(λ)*Ti(λ)*R(λ)dλ
The relationship between the spectral distribution of incident light and the measured values of the image sensor can be expressed by the following formula:
bi=∫x(λ)*Ti(λ)*R(λ)dλ
再进行离散化,得到:
bi=Σ(x(λ)*Ti(λ)*R(λ))
After further discretization, we get:
bi=Σ(x(λ)*Ti(λ)*R(λ))
其中R(λ)为图像传感器的响应,记为:
Ai(λ)=Ti(λ)*R(λ)
where R(λ) is the response of the image sensor, recorded as:
Ai(λ)=Ti(λ)*R(λ)
则上式可以扩展为矩阵形式:
Then the above formula can be expanded into matrix form:
其中,bi(i=1,2,3,…,m)是待测光透过光调制层后图像传感器的响应,分别对应m个结构单元对应的图像传感器的光强测量值,当一个物理像素对应一个结构单元时,可以理解为m个“物理像素”对应的光强测量值,其是一个长度为m的向量。A(可以理解为透射谱曲线)是系统对于不同波长的光响应,由光调制层的透过率和图像传感器的量子效率两个因素决定。A是矩阵,每一个行向量对应一个结构单元对不同波长入射光的响应,这里,对入射光进行离散、均匀的采样,共有n个采样点。A的列数与入射光的采样点数相同。这里,x(λ)即是入射光在不同波长λ的光强,也就是待测量的入射光光谱。Among them, bi(i=1,2,3,…,m) is the response of the image sensor after the light to be measured passes through the light modulation layer, which corresponds to the measured light intensity of the image sensor corresponding to m structural units. When a physical When a pixel corresponds to a structural unit, it can be understood as the measured light intensity corresponding to m "physical pixels", which is a vector with a length of m. A (can be understood as the transmission spectrum curve) is the light response of the system to different wavelengths, which is determined by two factors: the transmittance of the light modulation layer and the quantum efficiency of the image sensor. A is a matrix, and each row vector corresponds to the response of a structural unit to incident light of different wavelengths. Here, the incident light is sampled discretely and uniformly, with a total of n sampling points. The number of columns of A is the same as the number of sampling points of the incident light. Here, x(λ) is the intensity of the incident light at different wavelengths λ, which is the spectrum of the incident light to be measured.
在上述实现方式的基础上,将光谱像素进行阵列化处理,则可以实现快照式的光谱成像设备。Based on the above implementation method, by arraying the spectral pixels, a snapshot-type spectral imaging device can be realized.
光谱芯片上微纳结构(光子晶体结构或非光子晶体结构)控制着外界光源不同波长对于光谱芯片的透射率。在计算光子晶体结构在不同波长下透射率的过程中,由于光源的复杂性,不可避免的需要考虑到入射光的偏振情况。The micro-nano structure (photonic crystal structure or non-photonic crystal structure) on the spectrum chip controls the transmittance of the spectrum chip at different wavelengths of the external light source. In the process of calculating the transmittance of a photonic crystal structure at different wavelengths, due to the complexity of the light source, it is inevitably necessary to consider the polarization of the incident light.
第一实施例First embodiment
基于此,为了防止入射光的偏振,在根据本申请实施例的光谱芯片中,对所述光调制层进行设计。具体地,所述光调制层包括一个或多个结构单元,且每个结构单元包括n个相同的子结构单元,例如,记为子结构单元A1,A2,A3,…,An-1,An,其中,每个子结构单元具有至少一微纳结构。这里,所述子结构单元相同指的是所述子结构单元具有的微纳结构的数量、形状和结构都一致,且微纳结构在所述子结构单元的位置也相互对应,即两者在旋转预定角度之后基本可以重叠。所述微纳结构可以按照周期规则排布,亦可以不规则排布。进一步,对于n个子结构单元A1,A2,A3,…,An-1,An,子结构单元An与子结构单元An-1之间存在θ角度的旋转关系(在本申请实施例中,对旋转方向不做限定,可以是顺时针,也可以是逆时针),并且满足以下关系:
Based on this, in order to prevent the polarization of incident light, in the spectrum chip according to the embodiment of the present application, the light modulation layer is designed. Specifically, the light modulation layer includes one or more structural units, and each structural unit includes n identical sub-structural units, for example, denoted as sub-structural units A 1 , A 2 , A 3 , ..., A n -1 , A n , wherein each substructural unit has at least one micro-nano structure. Here, the same sub-structural units means that the number, shape and structure of the micro-nano structures of the sub-structural units are consistent, and the positions of the micro-nano structures in the sub-structural units also correspond to each other, that is, the two are in After rotating at a predetermined angle, they can basically overlap. The micro-nano structures may be regularly arranged according to periodicity, or may be arranged irregularly. Furthermore, for n sub-structural units A 1 , A 2 , A 3 , ..., A n-1 , A n , there is a rotation relationship of θ angle between sub-structural unit A n and sub-structural unit A n-1 (in this article In the application embodiment, the direction of rotation is not limited, it can be clockwise or counterclockwise), and the following relationship is satisfied:
其中m和n为正整数。 where m and n are positive integers.
需要说明的是,对于n个子结构单元在结构单元内如何排布,不会影响防偏振的效果,即n个子结构单元中的每两个子结构单元之间存在旋转角度θ,且该旋转角度θ满足:
It should be noted that how the n sub-structural units are arranged within the structural unit will not affect the anti-polarization effect, that is, there is a rotation angle θ between every two sub-structural units in the n sub-structural units, and the rotation angle θ satisfy:
其中m和n为正整数。where m and n are positive integers.
也就是,本申请实施例提供了一种光谱芯片的光调制层,所述光调制层包括一个或多个结构单元,每个结构单元包括多个子结构单元,且所述每个结构单元内的每个子结构单元所具有的微纳结构的数量、形状、结构对于所述多个子结构单元一致,且所述微纳结构相对于所述子结构单元的位置相互对应,并且,所述每个结构单元内的多个子结构单元中的每两个子结构单元之间具有旋转角度θ,满足:
That is, the embodiment of the present application provides a light modulation layer of a spectrum chip. The light modulation layer includes one or more structural units, each structural unit includes a plurality of sub-structural units, and the The number, shape, and structure of the micro-nano structures of each sub-structural unit are consistent for the multiple sub-structural units, and the positions of the micro-nano structures relative to the sub-structural units correspond to each other, and each structure There is a rotation angle θ between every two sub-structural units in the unit, which satisfies:
其中m和n为正整数。where m and n are positive integers.
图2图示了根据本申请实施例的光谱芯片的结构单元的第一配置示例的示意图。如图2所示,其中n=4,m=2。FIG. 2 illustrates a schematic diagram of a first configuration example of a structural unit of a spectrum chip according to an embodiment of the present application. As shown in Figure 2, where n=4 and m=2.
下面,将对根据本申请实施例的光谱芯片的结构单元的防偏振原理进行说明。Next, the anti-polarization principle of the structural unit of the spectrum chip according to the embodiment of the present application will be described.
当结构单元具有n个子结构单元A1,A2,A3,…,An-1,An时,假设垂直入射光电场强度为E=E0+Eθ,其中E0和Eθ为电场强度分量,对于子结构单元A1,针对E0和Eθ透射率可以写成T(λ)=T0+Tθ,其中Tθ指θ角度偏振下的入射光透射率。When the structural unit has n sub-structural units A 1 , A 2 , A 3 , ..., An-1 , An , it is assumed that the vertical incident light electric field intensity is E=E 0 +E θ , where E 0 and E θ are For the electric field intensity component, for substructural unit A 1 , the transmittance for E 0 and E θ can be written as T(λ)=T 0 +T θ , where T θ refers to the incident light transmittance under θ angle polarization.
假设子结构单元An与An-1之间存在θ角度逆时针旋转对应关系,则对于子结构单元An,透射率满足Tn(λ)=T(n-1)θ+T,注意,这里T里的θ均是相对于子结构单元A1的。Assuming that there is a θ angle counterclockwise rotation correspondence between sub-structural unit A n and A n-1 , then for sub-structural unit A n , the transmittance satisfies T n (λ)=T (n-1)θ +T , Note that the θ in T here are all relative to the substructural unit A 1 .
则对于多个子结构单元,总的透射率之和为:
T=E0×[T0(A1)+(Tθ(A2)+T(A3)+…+T(n-1)θ(An)]+Eθ×
[Tθ(A1)+T(A2)+T(A3)+…+T(An)]
Then for multiple sub-structural units, the sum of the total transmittance is:
T total =E 0 ×[T 0 (A 1 )+(T θ (A 2 )+T (A 3 )+…+T (n-1)θ (A n )]+E θ ×
[T θ (A 1 )+T (A 2 )+T (A 3 )+…+T (A n )]
若想结果偏振无关,则需要满足
If you want the result to be polarization independent, you need to satisfy
由于偏振光本身具有对称性,所以对于任意结构,最大可重复的旋转角度为180°,得到θ=180°/n,n大于等于2,或者θ=m×180°/n,n>m,m,n为正整数。Since polarized light itself has symmetry, for any structure, the maximum repeatable rotation angle is 180°, which results in θ=180°/n, n is greater than or equal to 2, or θ=m×180°/n, n>m, m, n are positive integers.
因此,对于n个子结构单元A1,A2,A3,…,An-1,An,当子结构单元An与子结构单元An-1之间存在θ角度旋转对应关系时,θ=180°/n,或者θ=m×180°/n,n>m,m,n为正整数,通过将透射率相加可以排除偏振对透射谱的影响。进一步,对于多个子结构单元A1,A2,A3,…,An-1,An,其也可以是随机排布的,而不必须按顺序排列。也就是,根据本申请实施例的光谱芯片的本质是结构单元的多个子结构单元对应的透射谱相加实现偏振无关。在某些示例中,旋转角度为θ=180°/n,或者θ=m×180°/n可以理解为等效的变化。例如,上述图2可以被理解为旋转角度θ=180°/2,即图2图示了两个子结构单元,且每个子结构单元进一步包括两个次级子结构单元;也可以被理解为旋转角度θ=2×180°/4,即包括四个子结构单元。Therefore, for n sub-structural units A 1 , A 2 , A 3 , ..., A n-1 , A n , when there is a θ angle rotation correspondence between sub-structural unit A n and sub-structural unit A n-1 , θ=180°/n, or θ=m×180°/n, n>m, m, n is a positive integer. The influence of polarization on the transmission spectrum can be eliminated by adding the transmittance. Furthermore, for multiple sub-structural units A 1 , A 2 , A 3 , ..., An -1 , An , they can also be randomly arranged and do not have to be arranged in order. That is to say, the essence of the spectrum chip according to the embodiment of the present application is that the transmission spectra corresponding to multiple sub-structural units of the structural unit are added together to achieve polarization independence. In some examples, the rotation angle is θ=180°/n, or θ=m×180°/n, which can be understood as an equivalent change. For example, the above-mentioned Figure 2 can be understood as a rotation angle θ = 180°/2, that is, Figure 2 illustrates two sub-structural units, and each sub-structural unit further includes two secondary sub-structural units; it can also be understood as a rotation The angle θ=2×180°/4, that is, it includes four sub-structural units.
值得注意的是,在本申请实施例中,多个子结构单元可以具有多种类型,且只要不同类型的子结构单元之间符合上述旋转角度关系,就可以实现偏振无关的,其本质与上述描述的本申请的原理是一致的。也就是,图2也可以被理解为两种类型的次级子结构单元分别构成子结构单元,再组成最终的结构单元,就可以实现偏振无关。It is worth noting that in the embodiment of the present application, multiple sub-structural units can be of multiple types, and as long as different types of sub-structural units comply with the above-mentioned rotation angle relationship, polarization-independent can be achieved, which is essentially the same as the above description. The principles of this application are consistent. That is to say, Figure 2 can also be understood as two types of secondary sub-structural units respectively forming sub-structural units, and then forming the final structural unit, so that polarization independence can be achieved.
考虑设计和工艺的难度,优选地,所述旋转角度θ=180°/n,其中n大于等于2,即m=1。例如,如图3所示,存在3个子结构单元,则旋转角度θ=60°,其中,每个子结构单元包括多个微纳结构。又例如,如图4所示,存在3个结构单元,则旋转角度θ=60°,其中,每个子结构单元包括至少二种微纳结构,且所述微纳结构可以是不规则排布。这里,图3图示了根据本申请实施例的光谱芯片的结构单元的第二配置示例的示意图。并且,图4图示了根据本申请实施例的光谱芯片的结构单元的第三配置示例的示意图。Considering the difficulty of design and process, preferably, the rotation angle θ=180°/n, where n is greater than or equal to 2, that is, m=1. For example, as shown in Figure 3, if there are three sub-structural units, the rotation angle θ=60°, where each sub-structural unit includes multiple micro-nano structures. For another example, as shown in Figure 4, if there are three structural units, the rotation angle θ=60°, where each sub-structural unit includes at least two types of micro-nano structures, and the micro-nano structures may be irregularly arranged. Here, FIG. 3 illustrates a schematic diagram of a second configuration example of a structural unit of a spectrum chip according to an embodiment of the present application. Moreover, FIG. 4 illustrates a schematic diagram of a third configuration example of a structural unit of a spectrum chip according to an embodiment of the present application.
也就是,在根据本申请实施例的光谱芯片的光调制层中,m等于1,且n大于等于2。That is, in the light modulation layer of the spectrum chip according to the embodiment of the present application, m is equal to 1, and n is greater than or equal to 2.
并且,在根据本申请实施例的光谱芯片的光调制层中,每个子结构单元包括至少一种微纳结构。Moreover, in the light modulation layer of the spectrum chip according to the embodiment of the present application, each sub-structural unit includes at least one micro-nano structure.
此外,在根据本申请实施例的光谱芯片的光调制层中,每个子结构单元包括至少两种微纳结构,且所述微纳结构可以是不规则排布。 In addition, in the light modulation layer of the spectrum chip according to the embodiment of the present application, each sub-structural unit includes at least two micro-nano structures, and the micro-nano structures may be irregularly arranged.
需要说明的是,由于光调制层的每个结构单元需要跟图像传感器的物理像素相对应,且一般周期性规则排布在图像传感器的感光路径上,因此在本申请实施例中,一般来讲每个结构单元都会为一个矩形,此时一般来讲第一子结构单元和第二子结构单元会被实施为矩形或正方形。图5图示了根据本申请实施例的结构单元与图像传感器上的物理像素的对应关系的示例。如图5所示,以一个结构单元对应四个物理像素(PD)为例,可以看到每个结构单元都是由第一子结构单元和第二子结构单元构成。其中,个别结构单元的微纳结构图形是一致的,但是其尺寸或位置有所不同,其对应的透射谱也是不同的。可以理解为,每个结构单元对应的透射谱曲线相关性比较低。It should be noted that, since each structural unit of the light modulation layer needs to correspond to the physical pixel of the image sensor, and is generally regularly arranged on the photosensitive path of the image sensor, in the embodiment of the present application, generally speaking, Each structural unit will be a rectangle. Generally speaking, the first sub-structural unit and the second sub-structural unit will be implemented as a rectangle or a square. FIG. 5 illustrates an example of the corresponding relationship between structural units and physical pixels on the image sensor according to an embodiment of the present application. As shown in Figure 5, taking one structural unit corresponding to four physical pixels (PD) as an example, it can be seen that each structural unit is composed of a first sub-structural unit and a second sub-structural unit. Among them, the micro-nano structure patterns of individual structural units are consistent, but their sizes or positions are different, and their corresponding transmission spectra are also different. It can be understood that the correlation of the transmission spectrum curve corresponding to each structural unit is relatively low.
但是,在本申请实施例中,由于子结构单元旋转角度θ,可能不再能够周期性规则排布,如图2和图3所示。不过,本领域技术人员可以理解,由于光谱芯片的光调制层并不需要完全包括由结构单元组成的调制部分,也可以包括无结构单元的非调制部分,因此,根据本申请实施例的光谱芯片的结构单元的配置是可行的。However, in the embodiment of the present application, due to the rotation angle θ of the sub-structural units, the periodic regular arrangement may no longer be possible, as shown in Figures 2 and 3. However, those skilled in the art can understand that since the light modulation layer of the spectrum chip does not need to completely include a modulation part composed of structural units, it may also include a non-modulation part without structural units. Therefore, the spectrum chip according to the embodiment of the present application The configuration of structural units is feasible.
图6图示了根据本申请实施例的光谱芯片的结构单元的优选配置的示意图。Figure 6 illustrates a schematic diagram of a preferred configuration of structural units of a spectrum chip according to an embodiment of the present application.
如图6所示,在该优选配置中,每个结构单元包括第一子结构单元和第二子结构单元,且所述第二子结构单元为所述第一子结构单元旋转90°形成,可以理解为在设计获得第一子结构单元后,再将第一子结构单元进行90°旋转获得第二子结构单元,再将第一子结构单元和第二子结构单元进行合并得到所述结构单元。需要说明的是,所述第一子结构单元和所述第二子结构单元由至少一微纳结构构成,所述微纳结构可以实施为调制孔(通孔、盲孔或其组合)、调制柱和/或调制线等。As shown in Figure 6, in this preferred configuration, each structural unit includes a first sub-structural unit and a second sub-structural unit, and the second sub-structural unit is formed by rotating the first sub-structural unit 90°, It can be understood that after the first sub-structural unit is obtained in the design, the first sub-structural unit is rotated 90° to obtain the second sub-structural unit, and then the first sub-structural unit and the second sub-structural unit are merged to obtain the structure. unit. It should be noted that the first sub-structural unit and the second sub-structural unit are composed of at least one micro-nano structure, and the micro-nano structure can be implemented as a modulated hole (through hole, blind hole or combination thereof), modulated hole columns and/or modulation lines, etc.
上述子结构单元配置消除偏振的作用的原理如下:The principle of the above substructure unit configuration to eliminate polarization is as follows:
假设入射光为:E=E+E,其中E为偏振方向平行于X方向的入射光分量,且E为偏振方向垂直于X方向,即平行于Y方向的入射光分量。进一步假设A结构的透射率T(λ)=T(λ)+T(λ),其中T为偏振方向平行于X方向的入射光透射率,T为偏振方向垂直于X方向的入射光透射率。Assume that the incident light is: E=E +E , where E is the incident light component with the polarization direction parallel to the X direction, and E is the incident light component with the polarization direction perpendicular to the X direction, that is, parallel to the Y direction. Further assume that the transmittance of structure A is T(λ)=T (λ)+T (λ), where T is the transmittance of incident light with the polarization direction parallel to the X direction, and T is the polarization direction perpendicular to the X direction. Incident light transmittance.
则,第一子结构单元A的透射光为:
Then, the transmitted light of the first sub-structural unit A is:
第二子结构单元B结构相对于第一子结构单元A旋转了90°,第二子结构单元B的透射光为:
The structure of the second sub-structural unit B is rotated 90° relative to the first sub-structural unit A. The transmitted light of the second sub-structural unit B is:
因此,第一子结构单元A与第二子结构单元B结构透射光的和为:
Therefore, the sum of the structurally transmitted light of the first sub-structural unit A and the second sub-structural unit B is:
可见,结果是与偏振无关的。It can be seen that the results are independent of polarization.
因此,当两个子结构单元之间存在90度旋转对应的透射谱相加时,所得结果与入射光偏振方向无关,所得的透射谱排除了入射光偏振的影响。即对应的两个子结构单元构成的结构单元可以排除入射光偏振的问题。Therefore, when the transmission spectra corresponding to a 90-degree rotation between the two sub-structural units are added, the obtained result has nothing to do with the polarization direction of the incident light, and the resulting transmission spectrum excludes the influence of the polarization of the incident light. That is, the structural unit composed of the corresponding two sub-structural units can eliminate the problem of incident light polarization.
也就是,在根据本申请实施例的光谱芯片的光调制层中,所述结构单元包括第一子结构单元和基于第一子结构单元旋转90度形成的第二子结构单元。That is, in the light modulation layer of the spectrum chip according to the embodiment of the present application, the structural unit includes a first sub-structural unit and a second sub-structural unit formed based on a 90-degree rotation of the first sub-structural unit.
图7A到图7C图示了如图6所示的结构单元的优选配置的消除光偏振影响的仿真验证的示意图。如图7A到图7C所示,仿真验证中令偏振方向从0到90°改变,取5个点。将五个透射谱汇总到同一图形中,得到第一子结构单元A在不同偏振情况下透射谱,如图7A所示,和第二子结构单元B在不同偏振情况下透射谱,如图7B所示。令第一子结构单元A的透射谱与第一子结构单元B的透射谱相加后得到第一子结构单元A和第二子结构单元B构成新的结构单元的不同偏振角度透射谱,如图7C所示。可以看出,根据本申请实施例的结构单元的设计方案可以明显去除入射光偏振带来的影响。7A to 7C illustrate schematic diagrams of simulation verification of eliminating the influence of light polarization of the preferred configuration of the structural unit shown in FIG. 6 . As shown in Figure 7A to Figure 7C, in the simulation verification, the polarization direction is changed from 0 to 90°, and 5 points are taken. Summarizing the five transmission spectra into the same graph, we obtain the transmission spectrum of the first sub-structural unit A under different polarization conditions, as shown in Figure 7A, and the transmission spectrum of the second sub-structural unit B under different polarization conditions, as shown in Figure 7B shown. After adding the transmission spectrum of the first sub-structural unit A and the transmission spectrum of the first sub-structural unit B, the different polarization angle transmission spectra of the new structural unit formed by the first sub-structural unit A and the second sub-structural unit B are obtained, such as As shown in Figure 7C. It can be seen that the design scheme of the structural unit according to the embodiment of the present application can significantly remove the influence caused by the polarization of the incident light.
并且,如上所述,所述光谱芯片的光调制层可以包括多个结构单元。图8图示了根据本申请实施例的光谱芯片的光调制层的优选配置的示意图。如图8所示,所述光调制层包括多个结构单元,且每个结构单元均包括两个子结构单元,即第一子结构单元和第二子结构单元,其中将第一子结构单元整体进行90°旋转获得第二子结构单元,再由第一子结构单元和第二子结构单元进行结合获得结构单元。并且,在该示例中,子结构单元为正方形,结构单元可以为规则的长方形。Moreover, as mentioned above, the light modulation layer of the spectrum chip may include multiple structural units. FIG. 8 illustrates a schematic diagram of a preferred configuration of a light modulation layer of a spectrum chip according to an embodiment of the present application. As shown in Figure 8, the light modulation layer includes a plurality of structural units, and each structural unit includes two sub-structural units, namely a first sub-structural unit and a second sub-structural unit, where the first sub-structural unit is Rotate 90° to obtain the second sub-structural unit, and then combine the first sub-structural unit and the second sub-structural unit to obtain the structural unit. Moreover, in this example, the sub-structural unit is a square, and the structural unit may be a regular rectangle.
第二实施例Second embodiment
基于此,为了防止入射光的偏振,在根据本申请实施例的光谱芯片中,对所述光调制层进行设计。具体地,所述光调制层包括n个相同的结构单元,例如,记为结构单元A1,A2,A3,…,An-1,An,其中,每个结构单元具有多个微纳结构单元。这里,所述结构单元相同指的是所述结构单元具有的微纳结构单元的排布一致,且微纳结构单元在所述结构单元的位置也相互对应,即两者在旋转预定角度之后基本可以重叠。其中,所述结构单元具有的微纳结构单元的排布一致指的是每个结构单元中包括的微纳结构单元的数量、形状和结构基本相同。Based on this, in order to prevent the polarization of incident light, in the spectrum chip according to the embodiment of the present application, the light modulation layer is designed. Specifically, the light modulation layer includes n identical structural units, for example, denoted as structural units A 1 , A 2 , A 3 ,..., An-1 , An , where each structural unit has multiple Micro-nano structural units. Here, the same structural unit means that the arrangement of the micro-nano structural units of the structural unit is consistent, and the positions of the micro-nano structural units in the structural unit also correspond to each other, that is, the two are basically basically the same after rotating at a predetermined angle. Can overlap. Wherein, the consistent arrangement of the micro-nano structural units of the structural unit means that the number, shape and structure of the micro-nano structural units included in each structural unit are basically the same.
并且,在根据本申请实施例的光谱芯片中,所述微纳结构单元按照周期规则排布,即所述结构单元实现为光子晶体。进一步,对于n个结构单元A1,A2,A3,…,An-1,An,其每两个结构单元,例如结构单元An与结构单元An-1的微纳结构单元之间存在θ角度的旋转关系(在本申请实施例中,对旋转方向不做限定,可以是顺时针,也可以是逆时针),并且满足以下关系:
Moreover, in the spectrum chip according to the embodiment of the present application, the micro-nano structural units are arranged according to periodic rules, that is, the structural units are implemented as photonic crystals. Further, for n structural units A 1 , A 2 , A 3 , ..., A n-1 , A n , each of the two structural units, such as the micro-nano structural unit of structural unit A n and structural unit A n-1 There is a rotation relationship of θ angle (in the embodiment of the present application, the direction of rotation is not limited, it can be clockwise or counterclockwise), and the following relationship is satisfied:
其中m和n为正整数。where m and n are positive integers.
也就是,本申请实施例提供了一种光谱芯片的光调制层,所述光调制层包括n个结构单元,每个结构单元具有多个微纳结构单元,所述微纳结构单元按照周期规则排布以使得所述结构单元实现为光子晶体,且每个所述结构单元所具有的微纳结构单元的数量、形状、结构对于所述n个结构单元一致,且所述多个微纳结构单元相对于所述结构单元的位置相互对应,并且,所述n个结构单元中的每两个结构单元的多个微纳结构单元之间具有旋转角度θ,满足:
That is, the embodiment of the present application provides a light modulation layer of a spectrum chip. The light modulation layer includes n structural units. Each structural unit has a plurality of micro-nano structural units. The micro-nano structural units follow periodic rules. Arranged so that the structural units are implemented as photonic crystals, and the number, shape, and structure of the micro-nano structural units of each structural unit are consistent for the n structural units, and the multiple micro-nano structures The positions of the units relative to the structural units correspond to each other, and there is a rotation angle θ between the multiple micro-nano structural units of every two structural units in the n structural units, satisfying:
其中m和n为正整数。where m and n are positive integers.
下面,将对根据本申请实施例的光谱芯片的结构单元的防偏振原理进行说明。Next, the anti-polarization principle of the structural unit of the spectrum chip according to the embodiment of the present application will be described.
当具有n个结构单元A1,A2,A3,…,An-1,An时,假设垂直入射光电场强度为E=E0+Eθ,其中E0和Eθ为电场强度分量,对于结构单元A1,针对E0和Eθ透射率可以写成T(λ)=T0+Tθ,其中Tθ指θ角度偏振下的入射光透射率。 When there are n structural units A 1 , A 2 , A 3 ,..., A n-1 , A n , it is assumed that the electric field intensity of the vertically incident light is E=E 0 +E θ , where E 0 and E θ are the electric field intensity Component, for structural unit A 1 , the transmittance for E 0 and E θ can be written as T(λ)=T 0 +T θ , where T θ refers to the incident light transmittance under θ angle polarization.
假设结构单元An与An-1之间存在θ角度逆时针旋转对应关系,则对于结构单元An,透射率满足Tn(λ)=T(n-1)θ+T,注意,这里T里的θ均是相对于结构单元A1的。Assuming that there is a θ angle counterclockwise rotation correspondence between structural unit A n and A n-1 , then for structural unit A n , the transmittance satisfies T n (λ)=T (n-1)θ +T , note that, Here, the θ in T are relative to the structural unit A 1 .
则对于多个结构单元,总的透射率之和为:
T=E0×[T0(A1)+(Tθ(A2)+T(A3)+…+T(n-1)θ(An)]+Eθ×
[Tθ(A1)+T(A2)+T(A3)+…+T(An)]
Then for multiple structural units, the sum of the total transmittance is:
T total =E 0 ×[T 0 (A 1 )+(T θ (A 2 )+T (A 3 )+…+T (n-1)θ (A n )]+E θ ×
[T θ (A 1 )+T (A 2 )+T (A 3 )+…+T (A n )]
若想结果偏振无关,则需要满足
If you want the result to be polarization independent, you need to satisfy
由于偏振光本身具有对称性,所以对于任意结构,最大可重复的旋转角度为180°,得到θ=180°/n,n大于等于2,或者θ=m×180°/n,n>m,m,n为正整数。Since polarized light itself has symmetry, for any structure, the maximum repeatable rotation angle is 180°, which results in θ=180°/n, n is greater than or equal to 2, or θ=m×180°/n, n>m, m, n are positive integers.
因此,对于n个结构单元A1,A2,A3,…,An-1,An,当结构单元An与结构单元An-1之间的微纳结构单元存在θ角度旋转对应关系时,θ=180°/n,或者θ=m×180°/n,n>m,m,n为正整数,通过将透射率相加可以排除偏振对透射谱的影响。进一步,对于多个结构单元A1,A2,A3,…,An-1,An,其也可以是随机排布的,而不必须按顺序排列。也就是,根据本申请实施例的光谱芯片的本质是结构单元对应的透射谱相加实现偏振无关。在某些示例中,旋转角度为θ=180°/n,或者θ=m×180°/n可以理解为等效的变化。Therefore, for n structural units A 1 , A 2 , A 3 , ..., A n-1 , A n , when there is a θ angle rotation correspondence between the micro-nano structural units between the structural unit A n and the structural unit A n-1 When the relationship is θ=180°/n, or θ=m×180°/n, n>m, m, n is a positive integer, the influence of polarization on the transmission spectrum can be eliminated by adding the transmittance. Furthermore, for multiple structural units A 1 , A 2 , A 3 , ..., An -1 , An , they can also be randomly arranged and do not have to be arranged in order. That is to say, the essence of the spectrum chip according to the embodiment of the present application is that the transmission spectra corresponding to the structural units are added together to achieve polarization independence. In some examples, the rotation angle is θ=180°/n, or θ=m×180°/n, which can be understood as an equivalent change.
在本申请实施例中,所述n个结构单元中的每两个结构单元的多个微纳结构单元之间具有旋转角度θ既可以是所述两个结构单元的所述多个微纳结构单元整体上具有旋转角度θ,也可以是所述两个结构单元的所述多个微纳结构单元中的每个微纳结构单元之间具有旋转角度θ。In the embodiment of the present application, the rotation angle θ between the multiple micro-nano structural units of each two structural units among the n structural units can be the multiple micro-nano structures of the two structural units. The unit as a whole has a rotation angle θ, or each micro-nano structural unit in the plurality of micro-nano structural units of the two structural units has a rotation angle θ.
也就是,在根据本申请实施例的光谱芯片的光调制层中,所述n个结构单元中的每两个结构单元的多个微纳结构单元之间具有旋转角度θ包括:所述两个结构单元的所述多个微纳结构单元整体上具有旋转角度θ。That is, in the light modulation layer of the spectrum chip according to the embodiment of the present application, the rotation angle θ between the multiple micro-nano structural units of each two structural units among the n structural units includes: the two The plurality of micro-nano structural units of the structural unit have a rotation angle θ as a whole.
并且,在根据本申请实施例的光谱芯片的光调制层中,所述n个结构单元中的每两个结构单元的多个微纳结构单元之间具有旋转角度θ包括:所述两个结构单元的所述多个微纳结构单元中的每个微纳结构单元之间具有旋转角度θ。 Moreover, in the light modulation layer of the spectrum chip according to the embodiment of the present application, the rotation angle θ between the multiple micro-nano structural units of each two structural units in the n structural units includes: the two structures There is a rotation angle θ between each of the plurality of micro-nano structural units of the unit.
这里,首先说明所述两个结构单元的所述多个微纳结构单元整体上具有旋转角度θ的情况。Here, the case where the plurality of micro-nano structural units of the two structural units as a whole has a rotation angle θ will be described first.
由于在本申请实施例中,n个结构单元作为整体具备偏振无关的能力,但是考虑到结构单元需要与图像传感器匹配形成光谱芯片,一般需要较为规则的形状,例如矩形、正方形、六边形等可以密铺的结构。因此,如图9A到图9C所示,在本申请实施例中,可以认为对于n个具有整体旋转关系的结构单元所具有的微纳结构单元设置一选择框,所述选择框可以实施为任意形状,例如正方形、长方形、三角形、多边形等任意形状,通过所述选择框(如图中的虚线所示)裁剪对应的n个结构单元,获得结构单元A1,A2,A3,…,An-1,An,这样,所述结构单元A1,A2,A3,…,An-1,An整体上即可实现偏振无关。图9A到图9C图示了根据本申请第二实施例的光谱芯片的光调制层中的多个结构单元的裁剪设计示意图,即3个结构单元依次旋转60°的关系,再用选择框分别裁剪获取新的结构单元A1,A2和A3,则结构单元A1,A2和A3整体可以实现偏振无关。In the embodiment of the present application, the n structural units as a whole have polarization-independent capabilities. However, considering that the structural units need to be matched with the image sensor to form a spectrum chip, a more regular shape is generally required, such as a rectangle, a square, a hexagon, etc. A structure that can be densely paved. Therefore, as shown in Figures 9A to 9C, in this embodiment of the present application, it can be considered that a selection box is set for the micro-nano structural units of n structural units with an overall rotation relationship, and the selection box can be implemented as any Shapes, such as squares, rectangles, triangles, polygons and other arbitrary shapes, cut the corresponding n structural units through the selection box (shown as a dotted line in the figure) to obtain structural units A 1 , A 2 , A 3 ,…, An -1 , An , in this way, the structural units A1 , A2 , A3 ,..., An-1 , An can be polarization independent as a whole. 9A to 9C illustrate a schematic diagram of the cropping design of multiple structural units in the light modulation layer of the spectrum chip according to the second embodiment of the present application, that is, the three structural units are rotated by 60° in sequence, and then use selection boxes to respectively By cutting out new structural units A 1 , A 2 and A 3 , the structural units A 1 , A 2 and A 3 as a whole can be polarization independent.
进一步,图10图示了通过如图9A到图9C所示的裁剪设计获得的结构单元的示意图。如图10所示,存在三个结构单元,且所述三个结构单元内的微纳结构单元的数量、形状、结构相同,并且依次旋转60°获得。其中,所述三个结构单元的微纳结构单元均为周期排布。Further, FIG. 10 illustrates a schematic diagram of a structural unit obtained through the cutting design shown in FIGS. 9A to 9C . As shown in Figure 10, there are three structural units, and the number, shape, and structure of the micro-nano structural units in the three structural units are the same, and they are obtained by rotating 60° in sequence. Wherein, the micro-nano structural units of the three structural units are all arranged periodically.
并且,如图10所示,由于在对所述结构单元所包括的多个微纳结构单元进行旋转时,可能存在结构单元的边缘的微纳结构不完整的情况,此时可以对面积小于等于50%的微纳结构去除,可选地,对面积大于等于50%的微纳结构进行补充完善或不做处理,如图11所示。图11图示了图10所示的结构单元中的微纳结构的优化设置的示意图。Moreover, as shown in Figure 10, when rotating the multiple micro-nano structural units included in the structural unit, there may be incomplete micro-nano structures at the edges of the structural units. In this case, the area of the unit may be less than or equal to 50% of the micro-nano structures are removed. Optionally, the micro-nano structures with an area greater than or equal to 50% are supplemented and improved or not processed, as shown in Figure 11. FIG. 11 illustrates a schematic diagram of the optimized arrangement of micro-nano structures in the structural unit shown in FIG. 10 .
也就是,在根据本申请实施例的光谱芯片的光调制层中,对于每个所述结构单元的边缘的不完整结构,对面积小于等于50%的微纳结构进行去除,和/或,对面积大于等于50%的微纳结构进行补足或不做处理。由于对不完整结构的修正使得对应的子结构单元存在区别,但可以视为对应的子结构单元还是存在子结构单元之间具有旋转角度θ关系。That is, in the light modulation layer of the spectrum chip according to the embodiment of the present application, for the incomplete structure at the edge of each structural unit, the micro-nano structure with an area of less than or equal to 50% is removed, and/or, Micro-nano structures with an area greater than or equal to 50% are supplemented or left alone. Due to the correction of the incomplete structure, the corresponding sub-structural units are different, but it can be regarded that the corresponding sub-structural units still have a rotation angle θ relationship between the sub-structural units.
在本申请实施例中,由于需要对于每个所述结构单元的边缘的不完整结构进行去除或者补足,这就使得每个结构单元中包括的微纳结构的数量发生变化,且在边缘处的微纳结构的结构和形状也发生变化。但是,在本申请实 施例中,除了以上由于边缘处的不完整结构进行的去除或者补足引起的变化,所述结构单元中包括的微纳结构单元的数量、形状和结构应该是完全相同的。因此,在这种情况下,即使对边缘处的不完整结构进行了去除或者补足,也认为所述结构单元具有的微纳结构单元的排布一致。In the embodiment of the present application, since the incomplete structure at the edge of each structural unit needs to be removed or supplemented, this causes the number of micro-nano structures included in each structural unit to change, and the number of micro-nano structures at the edge changes. The structure and shape of micro-nano structures also change. However, in this application In the embodiment, except for the above changes caused by the removal or supplementation of incomplete structures at the edges, the number, shape and structure of the micro-nano structural units included in the structural units should be exactly the same. Therefore, in this case, even if the incomplete structure at the edge is removed or supplemented, it is considered that the arrangement of the micro-nano structural units of the structural unit is consistent.
进一步,在本申请实施例中,对于所述n个结构单元,每个结构单元具有相同的轮廓,且所述结构单元包括多个微纳结构单元,所述微纳结构单元按照一定周期排布。其中,每个微纳结构单元具有对应的晶格平移矢量,所述晶格平移矢量包含空间中的线性无关向量,也就是,从一组点出发,通过晶格平移矢量可以产生整个微纳结构单元,即所述微纳结构单元沿着所述晶格平移矢量密铺形成所述结构单元,进一步,不同结构单元的微纳结构单元的晶格平移矢量之间存在θ角度旋转关系(本发明对旋转方向不做限定,可以是一致按照顺时针,也可以是一致按照逆时针),其中,θ=m*180°/n,n>m,m,n为正整数。其中,所述微纳结构单元可以实施为一个微纳结构,如图5所示,一个微纳结构构成微纳结构单元,为对应的箭头代表矢量方向,长方形框可以理解为晶格。另外,所述微纳结构单元也可以为多个相同微纳结构,或者是多个不同类型的微纳结构,如图6所示,对应的箭头代表矢量方向,正方形框可以理解为晶格。Further, in the embodiment of the present application, for the n structural units, each structural unit has the same outline, and the structural unit includes a plurality of micro-nano structural units, and the micro-nano structural units are arranged in a certain period. . Among them, each micro-nano structural unit has a corresponding lattice translation vector, and the lattice translation vector includes a linearly independent vector in space. That is, starting from a set of points, the entire micro-nano structure can be generated through the lattice translation vector. unit, that is, the micro-nano structural units are densely packed along the lattice translation vector to form the structural unit. Furthermore, there is a θ angle rotation relationship between the lattice translation vectors of the micro-nano structural units of different structural units (the present invention The direction of rotation is not limited, it can be clockwise or counterclockwise), where θ=m*180°/n, n>m, m, n are positive integers. Among them, the micro-nano structural unit can be implemented as a micro-nano structure. As shown in Figure 5, a micro-nano structure constitutes a micro-nano structural unit. The corresponding arrow represents the vector direction, and the rectangular frame can be understood as a crystal lattice. In addition, the micro-nano structural unit can also be multiple identical micro-nano structures, or multiple different types of micro-nano structures, as shown in Figure 6. The corresponding arrows represent vector directions, and the square frame can be understood as a crystal lattice.
这里,图12图示了根据本申请第二实施例的包括一个微纳结构的微纳结构单元的示意图。并且,图13图示了根据本申请第二实施例的包括多个微纳结构的微纳结构单元的示意图。Here, FIG. 12 illustrates a schematic diagram of a micro-nano structural unit including one micro-nano structure according to the second embodiment of the present application. Moreover, FIG. 13 illustrates a schematic diagram of a micro-nano structural unit including a plurality of micro-nano structures according to the second embodiment of the present application.
也就是,在根据本申请实施例的光谱芯片的光调制层中,所述微纳结构单元包括一个微纳结构,所述微纳结构构成晶格,所述晶格具有晶格平移矢量,在所述结构单元中按照所述晶格平移矢量对所述多个微纳结构单元进行密铺。That is, in the light modulation layer of the spectrum chip according to the embodiment of the present application, the micro-nano structural unit includes a micro-nano structure, the micro-nano structure constitutes a lattice, the lattice has a lattice translation vector, in In the structural unit, the plurality of micro-nano structural units are densely packed according to the lattice translation vector.
另外,在根据本申请实施例的光谱芯片的光调制层中,所述微纳结构单元包括多个微纳结构,所述多个微纳结构构成晶格,所述晶格具有晶格平移矢量,在所述结构单元中按照所述晶格平移矢量对所述多个微纳结构单元进行密铺。In addition, in the light modulation layer of the spectrum chip according to the embodiment of the present application, the micro-nano structural unit includes a plurality of micro-nano structures, the multiple micro-nano structures constitute a lattice, and the lattice has a lattice translation vector , in the structural unit, the plurality of micro-nano structural units are densely paved according to the lattice translation vector.
并且,在上述光谱芯片的光调制层中,所述多个微纳结构包括相同类型的微纳结构和/或不同类型的微纳结构。 Furthermore, in the light modulation layer of the above spectrum chip, the plurality of micro-nano structures include the same type of micro-nano structures and/or different types of micro-nano structures.
这里,需要理解的是,每个结构单元的轮廓相同,则对微纳结构单元按照晶格平移矢量进行密铺,可能存在结构单元的边缘存在使得个别微纳结构在结构单元中不完整,此时可以对面积小于等于50%的微纳结构去除,可选地对面积大于等于50%的微纳结构进行补足或不做处理。Here, what needs to be understood is that if the outline of each structural unit is the same, the micro-nano structural units are densely packed according to the lattice translation vector. There may be edges of the structural units that make individual micro-nano structures incomplete in the structural units. This The micro-nano structures with an area of less than or equal to 50% can be removed, and the micro-nano structures with an area of greater than or equal to 50% can optionally be supplemented or left untreated.
图14图示了根据本申请第二实施例的基于晶格平移矢量对多个微纳结构单元进行密铺的示意图。如图14所示,对于如图12所示的微纳结构单元,将第二结构单元相对第一结构单元对应的微纳结构单元的晶格平移矢量旋转60°,第三结构单元相对第二结构单元对应的微纳结构单元的晶格平移矢量旋转60°。其中,所述微纳结构单元沿着晶格平移矢量进行排布,密铺对应于整个结构单元。Figure 14 illustrates a schematic diagram of densely paving multiple micro-nano structural units based on lattice translation vectors according to the second embodiment of the present application. As shown in Figure 14, for the micro-nano structural unit shown in Figure 12, the second structural unit is rotated 60° relative to the lattice translation vector of the micro-nano structural unit corresponding to the first structural unit, and the third structural unit is rotated relative to the second The lattice translation vector of the micro-nano structural unit corresponding to the structural unit is rotated by 60°. Wherein, the micro-nano structural units are arranged along the lattice translation vector, and the dense paving corresponds to the entire structural unit.
另外,如上所述,在本申请实施例中,可以是所述两个结构单元的所述多个微纳结构单元中的每个微纳结构单元之间具有旋转角度θ。In addition, as mentioned above, in the embodiment of the present application, each micro-nano structural unit in the plurality of micro-nano structural units of the two structural units may have a rotation angle θ between them.
例如,对于如图13所示的微纳结构单元,其多个微纳结构单元构成的晶格为多维旋转对称(结构单元理解为光子晶体时,可以认为微纳结构单元的晶格具有多维旋转对称),例如四维旋转对称。也就是,多个微纳结构构成的微纳结构单元的晶格为正方形,其为四维旋转对称,此时若由多个微纳结构单元构成结构单元,则可以对单个微纳结构单元的晶格平移矢量旋转90°即可,如图15所示。图15图示了根据本申请第二实施例的单个微纳结构单元旋转构成结构单元的示意图。For example, for the micro-nano structural unit shown in Figure 13, the lattice composed of multiple micro-nano structural units has multi-dimensional rotational symmetry (when the structural unit is understood as a photonic crystal, it can be considered that the lattice of the micro-nano structural unit has multi-dimensional rotation. symmetry), such as four-dimensional rotational symmetry. That is to say, the crystal lattice of a micro-nano structural unit composed of multiple micro-nano structures is square and has four-dimensional rotational symmetry. At this time, if the structural unit is composed of multiple micro-nano structural units, the crystal lattice of a single micro-nano structural unit can be The grid translation vector can be rotated 90°, as shown in Figure 15. Figure 15 illustrates a schematic diagram of a single micro-nano structural unit rotating to form a structural unit according to the second embodiment of the present application.
并且,如图16所示,如果由单个微纳结构构成微纳结构单元,则所述微纳结构单元的晶格平移矢量旋转90°即所述单个微纳结旋转90°,例如,再由周期规则排布的多个微纳结构构成结构单元。图16图示了根据本申请第二实施例的单个微纳结构旋转构成结构单元的示意图。Moreover, as shown in Figure 16, if a micro-nano structural unit is composed of a single micro-nano structure, the lattice translation vector of the micro-nano structural unit is rotated by 90°, that is, the single micro-nano junction is rotated by 90°. For example, Multiple micro-nano structures arranged regularly in a periodic manner constitute the structural unit. Figure 16 illustrates a schematic diagram of a single micro-nano structure rotating to form a structural unit according to the second embodiment of the present application.
此外,如果所述微纳结构单元的晶格为六维旋转对称,则可以实施为三个微纳结构单元构成所述结构单元,其中晶格平移矢量旋转60°。若结构单元为两个微纳结构单元构成,则晶格平移矢量旋转90°,如图17和18所示。图17图示了根据本申请第二实施例的晶格平移矢量旋转60°的三个微纳结构单元构成结构单元的示意图。图18图示了根据本申请第二实施例的晶格平移矢量旋转90°的两个微纳结构单元构成结构单元的示意图。In addition, if the lattice of the micro-nano structural unit has six-dimensional rotational symmetry, it can be implemented as three micro-nano structural units constituting the structural unit, in which the lattice translation vector is rotated by 60°. If the structural unit is composed of two micro-nano structural units, the lattice translation vector is rotated 90°, as shown in Figures 17 and 18. FIG. 17 illustrates a schematic diagram of a structural unit composed of three micro-nano structural units with a lattice translation vector rotated by 60° according to the second embodiment of the present application. FIG. 18 illustrates a schematic diagram of a structural unit composed of two micro-nano structural units with a lattice translation vector rotated by 90° according to the second embodiment of the present application.
也就是,当所述微纳结构单元以及其对应的晶格为至少三维旋转对称排布时,多个微纳结构单元组成的结构单元偏振无关。图19A到图19C分别 图示了根据本申请第二实施例的三维、四维和六维旋转对称的微纳结构单元的示意图。That is, when the micro-nano structural units and their corresponding crystal lattices are arranged in at least three-dimensional rotational symmetry, the structural units composed of multiple micro-nano structural units are polarization independent. Figure 19A to Figure 19C respectively The figure shows a schematic diagram of three-dimensional, four-dimensional and six-dimensional rotationally symmetric micro-nano structural units according to the second embodiment of the present application.
示例性光谱芯片Example Spectral Chip
根据本申请实施例的光谱芯片可以包括如上所述的根据本申请实施例的光调制层和图像传感器,其中光调制层设置于所述图像传感器的感光路径上。这里,所述光调制层的结构单元可以具有如上所述的根据本申请实施例的光调制层的结构单元的配置,这里不再赘述。The spectrum chip according to the embodiment of the present application may include the light modulation layer and the image sensor according to the embodiment of the present application as described above, wherein the light modulation layer is disposed on the photosensitive path of the image sensor. Here, the structural unit of the light modulation layer may have the configuration of the structural unit of the light modulation layer according to the embodiment of the present application as described above, which will not be described again here.
也就是,根据本申请实施例的光谱芯片包括如上所述的光谱芯片的光调制层,和图像传感器,所述光调制层设置于所述图像传感器的感光路径上,且所述结构单元与所述图像传感器的物理像素相对应。并且,在以下示例中,以由两个子结构单元构成结构单元为例,而并不对本申请构成限制,根据本申请实施例的光谱芯片的光调制层的结构单元可以包括多个子结构单元,并且,结构单元符合上述设计,即可实现偏振无关。That is, the spectrum chip according to the embodiment of the present application includes the light modulation layer of the spectrum chip as described above, and an image sensor. The light modulation layer is disposed on the photosensitive path of the image sensor, and the structural unit is connected to the light sensing path of the image sensor. corresponds to the physical pixels of the image sensor. Moreover, in the following examples, a structural unit composed of two sub-structural units is taken as an example, but this does not limit the application. The structural unit of the light modulation layer of the spectrum chip according to the embodiment of the present application may include multiple sub-structural units, and , the structural unit conforms to the above design, and can achieve polarization independence.
图20图示了根据本申请实施例的光谱芯片的层叠结构的第一示例的示意图。如图20所示,根据本申请实施例的光谱芯片200包括光调制层210和图像传感器220,所述光调制层210被设置于所述图像传感器220的感光路径上,所述光调制层210包括至少一结构单元,且所述结构单元包括n个子结构单元。每个所述子结构单元包括至少一微纳结构,所述微纳结构可以为调制孔也可以是调制柱或调制线等结构;以调制孔为例,可以是圆孔、方孔、三角形孔、多边形孔或者不规则的孔(调制柱类似)。FIG. 20 illustrates a schematic diagram of a first example of a stacked structure of a spectrum chip according to an embodiment of the present application. As shown in Figure 20, the spectrum chip 200 according to the embodiment of the present application includes a light modulation layer 210 and an image sensor 220. The light modulation layer 210 is disposed on the photosensitive path of the image sensor 220. The light modulation layer 210 It includes at least one structural unit, and the structural unit includes n sub-structural units. Each of the sub-structural units includes at least one micro-nano structure. The micro-nano structure can be a modulation hole, a modulation column or a modulation line. Taking the modulation hole as an example, it can be a round hole, a square hole, or a triangular hole. , polygonal holes or irregular holes (similar to modulation columns).
所述光谱芯片还可以包括透光层230,所述透光层230位于所述光调制层210和所述图像传感器220之间,所述透光层230形成于所述图像传感器220表面,并具有平整的上表面,所述光调制层210形成于所述透光层230平整的上表面,所述透光层230平整的上表面一定程度有利于光调制层210的加工。The spectrum chip may further include a light-transmitting layer 230 located between the light modulation layer 210 and the image sensor 220. The light-transmitting layer 230 is formed on the surface of the image sensor 220, and Having a flat upper surface, the light modulation layer 210 is formed on the flat upper surface of the light-transmitting layer 230 . The flat upper surface of the light-transmitting layer 230 is beneficial to the processing of the light modulation layer 210 to a certain extent.
也就是,根据本申请实施例的光谱芯片进一步包括透光层,所述透光层位于所述光调制层和所述图像传感器之间,所述透光层形成于所述图像传感器的表面并具有平整的上表面。That is, the spectrum chip according to the embodiment of the present application further includes a light-transmitting layer located between the light modulation layer and the image sensor, and the light-transmitting layer is formed on the surface of the image sensor and Has a flat upper surface.
图21图示了根据本申请实施例的光谱芯片的层叠结构的第二示例的示意图。 FIG. 21 illustrates a schematic diagram of a second example of a stacked structure of a spectrum chip according to an embodiment of the present application.
如图21所示,根据本申请实施例的光谱芯片除光调制层210、图像传感器220和透光层230之外,还可以包括保护层240。所述保护层240位于所述光调制层210的上表面,对所述光调制层210进行保护。并且,当所述光调制层210的结构单元的微纳结构实施为调制孔时,所述调制孔可以至少部分被填充材料填充。As shown in FIG. 21 , the spectrum chip according to the embodiment of the present application may also include a protective layer 240 in addition to the light modulation layer 210 , the image sensor 220 and the light-transmitting layer 230 . The protective layer 240 is located on the upper surface of the light modulation layer 210 to protect the light modulation layer 210 . Moreover, when the micro-nano structure of the structural unit of the light modulation layer 210 is implemented as a modulation hole, the modulation hole may be at least partially filled with a filling material.
也就是,根据本申请实施例的光谱芯片进一步包括保护层,所述保护层位于所述光调制层的上表面,用于保护所述光调制层。That is, the spectrum chip according to the embodiment of the present application further includes a protective layer located on the upper surface of the light modulation layer for protecting the light modulation layer.
并且,在根据本申请实施例的光谱芯片中,所述光调制层的所述结构单元的微纳结构为调制孔,且所述调制孔至少部分被填充材料填充。Moreover, in the spectrum chip according to the embodiment of the present application, the micro-nano structure of the structural unit of the light modulation layer is a modulation hole, and the modulation hole is at least partially filled with a filling material.
图22图示了根据本申请实施例的光谱芯片的两个光调制层的配置的示意图。如图22所示,根据本申请实施例的光谱芯片包括位于图像传感器的感光路径上的多个光调制层,例如两个光调制层。具体地,所述光谱芯片300包括第一光调制层310和第二光调制层320,所述第一光调制层310和所述第二光调制层320依次形成于所述图像传感器330的感光路径上,入射光依次经过第一光调制层310和第二光调制层320被调制后到达图像传感器330。Figure 22 illustrates a schematic diagram of the configuration of two light modulation layers of a spectrum chip according to an embodiment of the present application. As shown in Figure 22, a spectrum chip according to an embodiment of the present application includes multiple light modulation layers, such as two light modulation layers, located on the photosensitive path of the image sensor. Specifically, the spectrum chip 300 includes a first light modulation layer 310 and a second light modulation layer 320. The first light modulation layer 310 and the second light modulation layer 320 are sequentially formed on the photosensitive surface of the image sensor 330. On the path, the incident light passes through the first light modulation layer 310 and the second light modulation layer 320 in sequence and is modulated before reaching the image sensor 330 .
此时,需要注意的是,结构单元可以理解为第一光调制层310和第二光调制层320的对应区域共同形成一结构单元,例如四个物理像素对应一个结构单元为例,四个物理像素对应的第一光调制层310和第二光调制层320的调制区域构成结构单元,即入射光经过第一光调制层310的该调制区域,进入第二光调制层320的该调制区域,被调制后到达对应的四个物理像素,则可以将第一光调制层310和第二光调制层320对应的调制区域界定为一结构单元。多层光调制层会共同作用影响对应的结构单元的透射谱,因此通过多层光调制层的设计使得透射谱更加丰富。同时,一定程度上可以降低工艺难度,尤其是对于调制孔的深度要求会降低,使得刻蚀或者纳米压印效果更佳。At this time, it should be noted that the structural unit can be understood as the corresponding areas of the first light modulation layer 310 and the second light modulation layer 320 jointly form a structural unit. For example, four physical pixels correspond to one structural unit. For example, four physical pixels correspond to one structural unit. The modulation areas of the first light modulation layer 310 and the second light modulation layer 320 corresponding to the pixels constitute a structural unit, that is, the incident light passes through the modulation area of the first light modulation layer 310 and enters the modulation area of the second light modulation layer 320, After being modulated to reach the corresponding four physical pixels, the corresponding modulation area of the first light modulation layer 310 and the second light modulation layer 320 can be defined as a structural unit. Multiple light modulation layers will work together to affect the transmission spectrum of the corresponding structural unit, so the design of the multi-layer light modulation layer makes the transmission spectrum richer. At the same time, the process difficulty can be reduced to a certain extent, especially the depth requirements for the modulation holes will be reduced, making the etching or nanoimprinting effect better.
并且,与以上所述相同,以所述光调制层的结构单元包括第一子结构单元和第二子结构单元为例,其中所述第二子结构单元基于所述第一子结构单元旋转90度形成。需要说明的是,所述结构单元由第一光调制层和第二光调制层共同构成,因此所述第一子结构单元和所述第二子结构单元都由第一光调制层和第二光调制层共同构成。也就是,需要对第一子结构单元的每一层光调制层都旋转90°获得第二子结构单元。既可以是所述第一子结构单元 和第二子结构单元互相呈90°关系;亦可以是指第一子结构单元的微纳结构和第二子结构单元的微纳结构单元之间呈90°关系。And, as mentioned above, taking the structural unit of the light modulation layer as an example including a first sub-structural unit and a second sub-structural unit, the second sub-structural unit is rotated 90 degrees based on the first sub-structural unit. degree formed. It should be noted that the structural unit is composed of a first light modulation layer and a second light modulation layer, so both the first sub-structural unit and the second sub-structural unit are composed of a first light modulation layer and a second light modulation layer. The light modulation layer is composed together. That is, each light modulation layer of the first sub-structural unit needs to be rotated 90° to obtain the second sub-structural unit. It can be the first sub-structural unit and the second sub-structural unit are in a 90° relationship with each other; it may also refer to a 90° relationship between the micro-nano structure of the first sub-structural unit and the micro-nano structure unit of the second sub-structural unit.
也就是,在根据本申请实施例的光谱芯片中,所述光调制层包括作为如上所述的光谱芯片的光调制层的第一光调制层和第二光调制层,所述第一光调制层和所述第二光调制层设置于所述图像传感器的感光路径上,且所述第一光调制层和所述第二光调制层的所述结构单元与所述图像传感器的物理像素相对应。That is, in the spectrum chip according to the embodiment of the present application, the light modulation layer includes a first light modulation layer and a second light modulation layer as the light modulation layer of the spectrum chip as described above, and the first light modulation layer The first light modulation layer and the second light modulation layer are disposed on the photosensitive path of the image sensor, and the structural units of the first light modulation layer and the second light modulation layer are in phase with the physical pixels of the image sensor. correspond.
进一步,与以上示例相同,所述光谱芯片可以进一步包括透光层340,所述透光层340位于所述图像传感器330和所述第二光调制层320之间,所述透光层340形成于所述图像传感器330的表面,并具有平整的上表面,所述第二光调制层320形成于所述透光层340平整的上表面。所述透光层340平整的上表面一定程度有利于所述第二光调制层320的加工。Further, the same as the above example, the spectrum chip may further include a light-transmitting layer 340, the light-transmitting layer 340 is located between the image sensor 330 and the second light modulation layer 320, the light-transmitting layer 340 forms On the surface of the image sensor 330 and having a flat upper surface, the second light modulation layer 320 is formed on the flat upper surface of the light-transmitting layer 340 . The flat upper surface of the light-transmitting layer 340 is beneficial to the processing of the second light modulation layer 320 to a certain extent.
所述光谱芯片还可以包括连接层350,所述连接层350位于所述第一光调制层310和所述第二光调制层320之间,用以连接所述第一光调制层310和所述第二光调制层320,所述连接层350具有平整的上表面。进一步,所述光谱芯片包括保护层360,所述保护层360位于所述第一光调制层310的上表面,对第一光调制层310进行保护。优选地,所述第一光调制层310和所述第二光调制层320对应的微纳结构为调制孔时,对所述调制孔进行填充,所述填充材料可以为低折射率材料,所述低折射率材料亦可以理解为折射率低于光调制层的材料的折射率,如图23所示。图23图示了根据本申请实施例的光谱芯片的层叠结构的第三示例的示意图。The spectrum chip may further include a connection layer 350 located between the first light modulation layer 310 and the second light modulation layer 320 for connecting the first light modulation layer 310 and the second light modulation layer 320 . As for the second light modulation layer 320, the connection layer 350 has a flat upper surface. Further, the spectrum chip includes a protective layer 360 located on the upper surface of the first light modulation layer 310 to protect the first light modulation layer 310 . Preferably, when the micro-nano structures corresponding to the first light modulation layer 310 and the second light modulation layer 320 are modulation holes, the modulation holes are filled, and the filling material can be a low refractive index material, so The low refractive index material can also be understood as a material with a refractive index lower than that of the light modulation layer, as shown in Figure 23. FIG. 23 illustrates a schematic diagram of a third example of a stacked structure of a spectrum chip according to an embodiment of the present application.
此外,根据本申请实施例的光谱芯片进一步包括保护层360,所述保护层360位于所述第一光调制层的上表面,用于保护所述第一光调制层。In addition, the spectrum chip according to the embodiment of the present application further includes a protective layer 360, which is located on the upper surface of the first light modulation layer and used to protect the first light modulation layer.
另外,在根据本申请实施例的光谱芯片中,所述第一光调制层和所述第二光调制层的所述结构单元的微纳结构为调制孔,且所述调制孔至少部分被填充材料填充。In addition, in the spectrum chip according to the embodiment of the present application, the micro-nano structure of the structural unit of the first light modulation layer and the second light modulation layer is a modulation hole, and the modulation hole is at least partially filled. Material filling.
进一步,所述透光层340、所述连接层350和所述保护层360可以为相同的材料,对应材料的折射率低于所述第一光调制层310和所述第二光调制层320的折射率。Further, the light-transmitting layer 340 , the connection layer 350 and the protective layer 360 may be made of the same material, and the refractive index of the corresponding material is lower than that of the first light modulation layer 310 and the second light modulation layer 320 refractive index.
也就是,在根据本申请实施例的光谱芯片中,所述透光层340、所述连接层350和所述保护层360由第一材料形成,所述第一光调制层310和所述 第二光调制层320由第二材料形成,且所述第一材料的第一折射率低于所述第二材料的第二折射率。That is, in the spectrum chip according to the embodiment of the present application, the light-transmitting layer 340, the connection layer 350 and the protective layer 360 are formed of the first material, the first light modulation layer 310 and the The second light modulation layer 320 is formed of a second material, and the first refractive index of the first material is lower than the second refractive index of the second material.
在又一示例中,所述光谱芯片400可以包括更多层光调制层,例如具有三层光调制层,即具有第一光调制层410、第二光调制层420和第三光调制层430,如图24所示。另外,所述光谱芯片500也可以包括四层光调制层,即具有第一光调制层510、第二光调制层520、第三光调制层530和第四光调制层540,如图25所示。其结构单元构成、设计原理与上述包含两个光调制层的示例相似,通过第一子结构单元旋转90°获得第二子结构单元,再由第一子结构单元和第二子结构单元构成一结构单元。图24图示了根据本申请实施例的光谱芯片的层叠结构的第四示例的示意图。图25图示了根据本申请实施例的光谱芯片的层叠结构的第五示例的示意图In yet another example, the spectrum chip 400 may include more light modulation layers, for example, three light modulation layers, that is, a first light modulation layer 410, a second light modulation layer 420, and a third light modulation layer 430. , as shown in Figure 24. In addition, the spectrum chip 500 may also include four light modulation layers, that is, a first light modulation layer 510, a second light modulation layer 520, a third light modulation layer 530 and a fourth light modulation layer 540, as shown in Figure 25 Show. The composition and design principle of its structural unit are similar to the above-mentioned example containing two light modulation layers. The second sub-structural unit is obtained by rotating the first sub-structural unit 90°, and then the first sub-structural unit and the second sub-structural unit form a Structural units. FIG. 24 illustrates a schematic diagram of a fourth example of a stacked structure of a spectrum chip according to an embodiment of the present application. Figure 25 illustrates a schematic diagram of a fifth example of a stacked structure of a spectrum chip according to an embodiment of the present application.
也就是,在根据本申请实施例的光谱芯片中,所述光调制层包括作为如上所述的光谱芯片的光调制层的三个以上的光调制层,所述三个以上的光调制层设置于所述图像传感器的感光路径上,且所述三个以上的光调制层的所述结构单元与所述图像传感器的物理像素相对应,即入射光依次通过每一层光调制层的结构单元后,并被调制后被对应的物理像素接收。需要说明的是,光谱芯片对应的结构单元可以由两个子结构单元构成,亦可以由多个子结构单元构成,其结构设计符合上述实施例描述,即可实现偏振无关。That is, in the spectrum chip according to the embodiment of the present application, the light modulation layer includes more than three light modulation layers as the light modulation layer of the spectrum chip as described above, and the three or more light modulation layers are provided On the photosensitive path of the image sensor, and the structural units of the three or more light modulation layers correspond to the physical pixels of the image sensor, that is, the incident light passes through the structural units of each light modulation layer in sequence Then, it is modulated and received by the corresponding physical pixel. It should be noted that the structural unit corresponding to the spectrum chip can be composed of two sub-structural units, or can be composed of multiple sub-structural units. Its structural design complies with the description of the above embodiments, which can achieve polarization independence.
在又一示例中,所述光谱芯片600可以包括非调制区域601和调制区域602,所述非调制区域不设置结构单元,而所述调制区域可以设置与上述相同的结构单元或其组合,如图26所示。图26图示了根据本申请实施例的图示了根据本申请实施例的光谱芯片的层叠结构的第六示例的示意图。这里,图24、图25和图26中各层的配置与如上所述的图23的相同,这里就不再赘述。In another example, the spectrum chip 600 can include a non-modulation area 601 and a modulation area 602. The non-modulation area is not provided with structural units, and the modulation area can be provided with the same structural units as above or a combination thereof, such as As shown in Figure 26. FIG. 26 illustrates a schematic diagram illustrating a sixth example of a stacked structure of a spectrum chip according to an embodiment of the present application. Here, the configuration of each layer in Fig. 24, Fig. 25 and Fig. 26 is the same as that of Fig. 23 as described above, and will not be described again here.
也就是,根据本申请实施例的光谱芯片包括设置于所述图像传感器的感光路径上的非调制区域和调制区域,所述非调制区域不具有如上所述的结构单元,且所述调制区域具有如上所述的结构单元或其组合。That is, the spectrum chip according to the embodiment of the present application includes a non-modulation area and a modulation area arranged on the photosensitive path of the image sensor. The non-modulation area does not have the structural unit as described above, and the modulation area has Structural units as described above or combinations thereof.
值得注意的是,在本申请实施例中,所述光谱芯片一般包括多个结构单元,每个结构单元都分布于图像传感器的感光路径上。并且,在本申请实施例中,每个结构单元都包括多个子结构单元,且各子结构单元之间具有预定角度θ,也就是,子结构单元旋转预定角度θ后应该可以与另一子结构单元相 重叠。优选地,在本申请实施例中,子结构单元旋转90°。并且,在多层光调制层实施例中,子结构单元在每一层光调制层都旋转预定角度θ。亦可以是子结构单元的微纳结构单元之间具有预定角度θ。It is worth noting that in the embodiment of the present application, the spectrum chip generally includes multiple structural units, and each structural unit is distributed on the photosensitive path of the image sensor. Moreover, in the embodiment of the present application, each structural unit includes multiple sub-structural units, and there is a predetermined angle θ between each sub-structural unit. That is, the sub-structural unit should be able to connect with another sub-structure after being rotated by the predetermined angle θ. unit phase overlapping. Preferably, in the embodiment of the present application, the sub-structural unit is rotated 90°. Moreover, in the multi-layer light modulation layer embodiment, the sub-structural unit is rotated by a predetermined angle θ in each light modulation layer. It can also be a predetermined angle θ between the micro-nano structural units of the sub-structural units.
以上结合具体实施例描述了本申请的基本原理,但是,需要指出的是,在本申请中提及的优点、优势、效果等仅是示例而非限制,不能认为这些优点、优势、效果等是本申请的各个实施例必须具备的。另外,上述公开的具体细节仅是为了示例的作用和便于理解的作用,而非限制,上述细节并不限制本申请为必须采用上述具体的细节来实现。The basic principles of the present application have been described above in conjunction with specific embodiments. However, it should be pointed out that the advantages, advantages, effects, etc. mentioned in this application are only examples and not limitations. These advantages, advantages, effects, etc. cannot be considered to be Each embodiment of this application must have. In addition, the specific details disclosed above are only for the purpose of illustration and to facilitate understanding, and are not limiting. The above details do not limit the application to be implemented using the above specific details.
本申请中涉及的器件、装置、设备、系统的方框图仅作为例示性的例子并且不意图要求或暗示必须按照方框图示出的方式进行连接、布置、配置。如本领域技术人员将认识到的,可以按任意方式连接、布置、配置这些器件、装置、设备、系统。诸如“包括”、“包含”、“具有”等等的词语是开放性词汇,指“包括但不限于”,且可与其互换使用。这里所使用的词汇“或”和“和”指词汇“和/或”,且可与其互换使用,除非上下文明确指示不是如此。这里所使用的词汇“诸如”指词组“诸如但不限于”,且可与其互换使用。The block diagrams of the devices, devices, equipment, and systems involved in this application are only illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, devices, equipment, and systems may be connected, arranged, and configured in any manner. Words such as "includes," "includes," "having," etc. are open-ended terms that mean "including, but not limited to," and may be used interchangeably therewith. As used herein, the words "or" and "and" refer to the words "and/or" and are used interchangeably therewith unless the context clearly dictates otherwise. As used herein, the word "such as" refers to the phrase "such as, but not limited to," and may be used interchangeably therewith.
还需要指出的是,在本申请的装置、设备和方法中,各部件或各步骤是可以分解和/或重新组合的。这些分解和/或重新组合应视为本申请的等效方案。It should also be pointed out that in the device, equipment and method of the present application, each component or each step can be decomposed and/or recombined. These decompositions and/or recombinations shall be considered equivalent versions of this application.
提供所公开的方面的以上描述以使本领域的任何技术人员能够做出或者使用本申请。对这些方面的各种修改对于本领域技术人员而言是非常显而易见的,并且在此定义的一般原理可以应用于其他方面而不脱离本申请的范围。因此,本申请不意图被限制到在此示出的方面,而是按照与在此公开的原理和新颖的特征一致的最宽范围。The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the application. Thus, this application is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
为了例示和描述的目的已经给出了以上描述。此外,此描述不意图将本申请的实施例限制到在此公开的形式。尽管以上已经讨论了多个示例方面和实施例,但是本领域技术人员将认识到其某些变型、修改、改变、添加和子组合。 The foregoing description has been presented for the purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of the present application to the form disclosed herein. Although various example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

Claims (27)

  1. 一种光谱芯片的光调制层,其特征在于,包括:A light modulation layer of a spectrum chip, characterized by including:
    一个或多个结构单元,每个结构单元包括n个子结构单元,且所述每个结构单元内的每个子结构单元所具有的微纳结构的数量、形状、结构对于所述多个子结构单元一致,且所述微纳结构相对于所述子结构单元的位置相互对应,并且,所述每个结构单元内的n个子结构单元中的每两个子结构单元之间具有旋转角度θ,满足:
    One or more structural units, each structural unit includes n sub-structural units, and the number, shape, and structure of the micro-nano structures of each sub-structural unit in each structural unit are consistent with the plurality of sub-structural units. , and the positions of the micro-nano structures relative to the sub-structural units correspond to each other, and there is a rotation angle θ between every two sub-structural units in the n sub-structural units within each structural unit, satisfying:
    其中m和n为正整数。where m and n are positive integers.
  2. 根据权利要求1所述的光谱芯片的光调制层,其中,m等于1,且n大于等于2。The light modulation layer of the spectrum chip according to claim 1, wherein m is equal to 1 and n is greater than or equal to 2.
  3. 根据权利要求1所述的光谱芯片的光调制层,其中,每个子结构单元包括至少一种微纳结构。The light modulation layer of the spectrum chip according to claim 1, wherein each sub-structural unit includes at least one micro-nano structure.
  4. 根据权利要求1所述的光谱芯片的光调制层,其中,每个子结构单元包括至少两种微纳结构,且所述微纳结构不规则排布。The light modulation layer of the spectrum chip according to claim 1, wherein each sub-structural unit includes at least two micro-nano structures, and the micro-nano structures are irregularly arranged.
  5. 根据权利要求1所述的光谱芯片的光调制层,其中,所述结构单元包括第一子结构单元和第二子结构单元,且所述第二子结构单元以所述第一子结构单元90度旋转形成。The light modulation layer of the spectrum chip according to claim 1, wherein the structural unit includes a first sub-structural unit and a second sub-structural unit, and the second sub-structural unit is based on the first sub-structural unit 90 degree rotation.
  6. 一种光谱芯片的光调制层,其特征在于,包括:A light modulation layer of a spectrum chip, characterized by including:
    n个结构单元,每个结构单元具有多个微纳结构单元,所述微纳结构单元按照周期规则排布以使得所述结构单元实现为光子晶体,且每个所述结构单元所具有的微纳结构单元的排布对于所述n个结构单元一致,且所述多个微纳结构单元相对于所述结构单元的位置相互对应,并且,所述n个结构单元中的每两个结构单元的多个微纳结构单元之间具有旋转角度θ,满足:
    n structural units, each structural unit has a plurality of micro-nano structural units, the micro-nano structural units are arranged according to periodic rules so that the structural units are implemented as photonic crystals, and each of the structural units has micro-nano structural units. The arrangement of the nanostructural units is consistent for the n structural units, and the positions of the plurality of micro-nano structural units relative to the structural units correspond to each other, and every two structural units in the n structural units There is a rotation angle θ between the multiple micro-nano structural units, which satisfies:
    其中m和n为正整数。where m and n are positive integers.
  7. 根据权利要求6所述的光谱芯片的光调制层,其中,所述n个结构单元中的每两个结构单元的多个微纳结构单元之间具有旋转角度θ包括:The light modulation layer of the spectrum chip according to claim 6, wherein the rotation angle θ between the multiple micro-nano structural units of every two structural units in the n structural units includes:
    所述两个结构单元的所述多个微纳结构单元整体上具有旋转角度θ。The plurality of micro-nano structural units of the two structural units have a rotation angle θ as a whole.
  8. 根据权利要求7所述的光谱芯片的光调制层,其中,对于每个所述结构单元的边缘的不完整结构,对面积小于等于50%的微纳结构单元进行去除,和/或,对面积大于等于50%的微纳结构单元进行补足或不做处理。The light modulation layer of the spectrum chip according to claim 7, wherein, for the incomplete structure at the edge of each structural unit, the micro-nano structural units with an area of less than or equal to 50% are removed, and/or the area is More than or equal to 50% of the micro-nano structural units are supplemented or not processed.
  9. 根据权利要求7所述的光谱芯片的光调制层,其中,所述微纳结构单元包括一个微纳结构,所述微纳结构构成晶格,所述晶格具有晶格平移矢量,在所述结构单元中按照所述晶格平移矢量对所述多个微纳结构单元进行密铺。The light modulation layer of the spectrum chip according to claim 7, wherein the micro-nano structural unit includes a micro-nano structure, the micro-nano structure constitutes a lattice, the lattice has a lattice translation vector, and in the In the structural unit, the plurality of micro-nano structural units are densely packed according to the lattice translation vector.
  10. 根据权利要求7所述的光谱芯片的光调制层,其中,所述微纳结构单元包括多个微纳结构,所述多个微纳结构构成晶格,所述晶格具有晶格平移矢量,在所述结构单元中按照所述晶格平移矢量对所述多个微纳结构单元进行密铺。The light modulation layer of the spectrum chip according to claim 7, wherein the micro-nano structural unit includes a plurality of micro-nano structures, the plurality of micro-nano structures constitute a lattice, and the lattice has a lattice translation vector, In the structural unit, the plurality of micro-nano structural units are densely packed according to the lattice translation vector.
  11. 根据权利要求10所述的光谱芯片的光调制层,其中,所述多个微纳结构包括相同类型的微纳结构和/或不同类型的微纳结构。The light modulation layer of a spectrum chip according to claim 10, wherein the plurality of micro-nano structures include the same type of micro-nano structures and/or different types of micro-nano structures.
  12. 根据权利要求6所述的光谱芯片的光调制层,其中,所述n个结构单元中的每两个结构单元的多个微纳结构单元之间具有旋转角度θ包括:所述两个结构单元的所述多个微纳结构单元中的每个微纳结构单元之间具有旋转角度θ。 The light modulation layer of the spectrum chip according to claim 6, wherein the rotation angle θ between the plurality of micro-nano structural units of each two structural units in the n structural units includes: the two structural units There is a rotation angle θ between each of the plurality of micro-nano structural units.
  13. 根据权利要求12所述的光谱芯片的光调制层,其中,所述微纳结构单元包括一个或多个微纳结构。The light modulation layer of the spectrum chip according to claim 12, wherein the micro-nano structure unit includes one or more micro-nano structures.
  14. 根据权利要求6所述的光谱芯片的光调制层,其中,所述微纳结构单元包括多个微纳结构,且所述微纳结构单元为至少三维旋转对称。The light modulation layer of the spectrum chip according to claim 6, wherein the micro-nano structural unit includes a plurality of micro-nano structures, and the micro-nano structural unit is at least three-dimensional rotationally symmetrical.
  15. 根据权利要求14所述的光谱芯片的光调制层,其中,所述微纳结构单元中的所述多个微纳结构彼此呈60°或者90°旋转。The light modulation layer of the spectrum chip according to claim 14, wherein the plurality of micro-nano structures in the micro-nano structure unit are rotated by 60° or 90° to each other.
  16. 一种光谱芯片,其特征在于,包括:A spectrum chip is characterized by including:
    根据权利要求1到15中任意一项所述的光调制层;和,The light modulation layer according to any one of claims 1 to 15; and,
    图像传感器,所述光调制层设置于所述图像传感器的感光路径上,且所述结构单元与所述图像传感器的物理像素相对应。Image sensor, the light modulation layer is disposed on the photosensitive path of the image sensor, and the structural unit corresponds to the physical pixel of the image sensor.
  17. 根据权利要求16所述的光谱芯片,进一步包括:The spectrum chip according to claim 16, further comprising:
    透光层,所述透光层位于所述光调制层和所述图像传感器之间,所述透光层形成于所述图像传感器的表面并具有平整的上表面。A light-transmitting layer is located between the light modulation layer and the image sensor. The light-transmitting layer is formed on the surface of the image sensor and has a flat upper surface.
  18. 根据权利要求16所述的光谱芯片,进一步包括:保护层,所述保护层位于所述光调制层的上表面,用于保护所述光调制层。The spectrum chip according to claim 16, further comprising: a protective layer located on the upper surface of the light modulation layer for protecting the light modulation layer.
  19. 根据权利要求16所述的光谱芯片,其中,所述光调制层的所述结构单元的微纳结构为调制孔,且所述调制孔至少部分被填充材料填充。The spectrum chip according to claim 16, wherein the micro-nano structure of the structural unit of the light modulation layer is a modulation hole, and the modulation hole is at least partially filled with a filling material.
  20. 根据权利要求16所述的光谱芯片,其中,所述光调制层包括作为根据权利要求1到15中任意一项所述的光调制层的第一光调制层和第二光调制层,所述第一光调制层和所述第二光调制层设置于所述图像传感器的感光路径上,且所述第一光调制层和所述第二光调制层的所述结构单元与所述图像传感器的物理像素相对应。 The spectrum chip according to claim 16, wherein the light modulation layer includes a first light modulation layer and a second light modulation layer as the light modulation layer according to any one of claims 1 to 15, said The first light modulation layer and the second light modulation layer are disposed on the photosensitive path of the image sensor, and the structural units of the first light modulation layer and the second light modulation layer are in contact with the image sensor. corresponding to the physical pixels.
  21. 根据权利要求20所述的光谱芯片,进一步包括:透光层,所述透光层位于所述图像传感器和所述第二光调制层之间,所述透光层形成于所述图像传感器的表面并具有平整的上表面。The spectrum chip according to claim 20, further comprising: a light-transmitting layer located between the image sensor and the second light modulation layer, the light-transmitting layer being formed on the image sensor. surface and has a flat upper surface.
  22. 根据权利要求20所述的光谱芯片,进一步包括:连接层,所述连接层位于所述第一光调制层和所述第二光调制层之间,用于连接所述第一光调制层和所述第二光调制层。The spectrum chip according to claim 20, further comprising: a connection layer located between the first light modulation layer and the second light modulation layer for connecting the first light modulation layer and the second light modulation layer. the second light modulation layer.
  23. 根据权利要求20所述的光谱芯片,进一步包括:保护层,所述保护层位于所述第一光调制层的上表面,用于保护所述第一光调制层。The spectrum chip according to claim 20, further comprising: a protective layer located on the upper surface of the first light modulation layer for protecting the first light modulation layer.
  24. 根据权利要求20所述的光谱芯片,其中,所述第一光调制层和所述第二光调制层的所述结构单元的微纳结构为调制孔,且所述调制孔至少部分被填充材料填充。The spectrum chip according to claim 20, wherein the micro-nano structure of the structural unit of the first light modulation layer and the second light modulation layer is a modulation hole, and the modulation hole is at least partially filled with material filling.
  25. 根据权利要求21到23中任意一项所述的光谱芯片,所述透光层、或所述连接层,或所述保护层由第一材料形成,所述第一光调制层和所述第二光调制层由第二材料形成,且所述第一材料的第一折射率低于所述第二材料的第二折射率。The spectrum chip according to any one of claims 21 to 23, the light-transmitting layer, or the connecting layer, or the protective layer is formed of a first material, the first light modulation layer and the third The two light modulation layers are formed of a second material, and the first refractive index of the first material is lower than the second refractive index of the second material.
  26. 根据权利要求16所述的光谱芯片,其中,所述光调制层包括作为根据权利要求1到15中任意一项所述的光调制层的三个以上的光调制层,所述三个以上的光调制层设置于所述图像传感器的感光路径上,且所述三个以上的光调制层的所述结构单元与所述图像传感器的物理像素相对应。The spectrum chip according to claim 16, wherein the light modulation layer includes three or more light modulation layers as the light modulation layer according to any one of claims 1 to 15, the three or more light modulation layers The light modulation layer is disposed on the photosensitive path of the image sensor, and the structural units of the three or more light modulation layers correspond to physical pixels of the image sensor.
  27. 根据权利要求16所述的光谱芯片,包括:设置于所述图像传感器的感光路径上的非调制区域和调制区域,所述非调制区域不具有根据权利要求1到15中任意一项所述的结构单元,且所述调制区域具有根据权利要求1到15中任意一项所述的结构单元或其组合。 The spectrum chip according to claim 16, comprising: a non-modulation area and a modulation area arranged on the photosensitive path of the image sensor, the non-modulation area does not have the structure according to any one of claims 1 to 15. Structural unit, and the modulation region has the structural unit according to any one of claims 1 to 15 or a combination thereof.
PCT/CN2023/111391 2022-08-09 2023-08-07 Light modulation layer of spectrum chip, and spectrum chip WO2024032525A1 (en)

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