WO2024023807A1 - Device and method for measuring topologically protected surface magnon - Google Patents
Device and method for measuring topologically protected surface magnon Download PDFInfo
- Publication number
- WO2024023807A1 WO2024023807A1 PCT/IB2023/057737 IB2023057737W WO2024023807A1 WO 2024023807 A1 WO2024023807 A1 WO 2024023807A1 IB 2023057737 W IB2023057737 W IB 2023057737W WO 2024023807 A1 WO2024023807 A1 WO 2024023807A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- magnon
- electrical voltage
- magnetic layer
- conducting layer
- magnetic
- Prior art date
Links
- 230000005418 spin wave Effects 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000002800 charge carrier Substances 0.000 claims abstract description 13
- 238000005259 measurement Methods 0.000 claims abstract description 11
- 230000005291 magnetic effect Effects 0.000 claims description 33
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 239000003302 ferromagnetic material Substances 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000005294 ferromagnetic effect Effects 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000002349 favourable effect Effects 0.000 claims description 2
- 239000002902 ferrimagnetic material Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- 230000008859 change Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 230000005355 Hall effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 229910005382 FeSn Inorganic materials 0.000 description 1
- 241000627951 Osteobrama cotio Species 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001427 incoherent neutron scattering Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
- G01R33/1284—Spin resolved measurements; Influencing spins during measurements, e.g. in spintronics devices
Definitions
- the present disclosure relates to topologically protected surface magnon states.
- the present disclosure provides a means to measure topologically protected surface magnon states.
- An object of the present disclosure relates to topologically protected surface magnon states.
- the present disclosure provides a means to measure topologically protected surface magnon states.
- Another object of the present disclosure is to provide a device capable of detecting and characterizing topologically protected surface magnons.
- Yet another object of the present disclosure is to utilize the measurement geometry comprising a metal layer on top of a ferromagnetic material and the physical mechanism of interfacial magnon drag enables the electrical detection and exploration of the unique properties of topological magnons.
- the present disclosure relates in general, to topologically protected surface magnon states.
- the present disclosure provides a means to measure topologically protected surface magnon states.
- the main objective of the present disclosure is to overcome the drawback, limitations, and shortcomings of the existing device and solution, by providing a device designed for the detection of topologically protected surface magnons.
- the device consists of a measurement geometry featuring a metal layer deposited on the surface of a ferromagnetic material.
- a magnon spin current on the magnet surface exerts a dragging force on the charge carriers in the adjacent material, an electrical voltage is generated.
- This device provides a means to electrically detect and measure topologically protected surface magnons, offering valuable insights into their properties and behavior.
- the interplay between the metal layer and the ferromagnet enables the observation and analysis of these unique magnonic states, opening up possibilities for the development of magnon-based devices and applications.
- FIG. 1 illustrates a schematic view of a device for measuring magnon currents, according to an embodiment of the present disclosure
- FIGs. 2A and 2B illustrate exemplary plots depicting variation in thermopower developed in the metal layer with change in applied magnetic field H, when the metal layer is platinum and tungsten, respectively;
- FIGs. 3A and 3B illustrate exemplary plots depicting variation in thermopower developed in the metal layer with change in applied magnetic field H, when the metal layer is platinum and tungsten, respectively; and [0014]
- FIG. 4 illustrates a schematic representation of the device indicating interfacial magnon drag, according to an embodiment of the present disclosure.
- FIG. 5 illustrates a flow chart of the method for detecting topologically protected surface magnons, according to an embodiment of the present disclosure.
- Magnons refer to a quanta of collective spin wave excitations. Magnons may be used to develop a platform where a topology of a magnon band structure may manifest itself in the form of observable surface states which are distinct from the bulk. Such topological magnons may have properties distinct from their bulk counterparts and may thus have important implications in magnon based spintronic devices.
- the existence of topologically protected magnon (surface) states remains to be experimentally demonstrated, owing to the fact that conventional measurement techniques, such as inelastic neutron scattering, or Brillouin light scattering, are relatively insensitive to surface magnon states.
- the present disclosure provides a means to demonstrate the existence of topologically protected surface magnons using an electrical based detection methodology. This is achieved by the means of a new physical mechanism of interfacial magnon drag, where the magnon currents in a surface of a material is detected by means of a force imposed by the magnon currents on charge carriers of an adjacent layer.
- the present disclosure further provides a device for detecting the topologically protected surface magnons.
- the device used to infer the presence of magnon surface states includes a measurement geometry including a metal deposited on top of a ferromagnet.
- the device may utilize the phenomena of interfacial magnon drag, wherein a magnon spin current on the magnet surface drags the charge carriers in the adjoining material, thereby giving rise to an electrical voltage.
- the magnon band structure in a number of quantum materials may exhibit topologically protected attributes. Being able to infer magnon topology using electrical means may have far reaching applications in many areas, including that of dissipation-less spin transport, magnonic crystals, light-induced magnonic phenomena, and magnon-based quantum information processing.
- FIG. 1 illustrates a schematic view of a device 100 for measuring magnon currents, according to an embodiment of the present disclosure.
- the device includes a conducting layer 102 disposed on top of a magnetic layer 104.
- the conducting layer 102 disposed on top of a magnetic layer 104 to define a measurement geometry.
- An energy source configured to apply a magnetic field to induce magnon spin currents on the surface of the magnetic layer 104, where the magnon spin current on the surface of the magnetic layer 104 exerts a dragging force on the charge carriers in the conducting layer 102, resulting in the generation of an electrical voltage.
- the energy source in the present disclosure can encompass various forms, including temperature gradients, microwaves, acoustic waves, light, electric fields, or any combination thereof.
- the conducting layer 102 facilitates the collection of charge carriers affected by the dragging force exerted by the magnon spin currents on the magnet surface, where the interfacial magnon drag gives rise to the electrical voltage indicative of the strength and direction of the magnon spin currents.
- the electrical voltage generated as a result of the interfacial magnon drag is measured to characterize the magnon spin currents.
- the conducting layer 102 may include any material, such as a metal or a semi-conductor that includes a finite number of charge carriers, such as platinum, tungsten, etc.
- the magnetic layer 104 comprises ferromagnetic material.
- the ferromagnetic material selected from topologically protected magnon surface states, including pyrochlores, transition metal halides, layered ferromagnetic semiconductors, Kagome compounds and their variants, hexagonal closed packed (HCP) magnets, Skyrmion crystals or Skyrmion host materials, honeycomb lattice materials, and Kitaev magnets.
- HCP hexagonal closed packed
- Skyrmion crystals or Skyrmion host materials honeycomb lattice materials
- Kitaev magnets Kitaev magnets.
- the present disclosure is not limited to ferromagnetic materials and can be extended to include other magnetic materials, such as ferro, antiferro, or ferri-magnetic materials.
- the magnetic layer 104 may include the material that possesses the topologically protected magnon surface states.
- the materials may include, without limitations, pyrochlores (such as Y2V2O7), transition metal halides (such as CrF, CrBr , layered ferromagnetic semiconductors (such as CrSiTcs, CrGcTcs), Kagome compounds and their variants (such as YMneSne, FeSn), HCP magnets such as Gd, Skyrmion crystals or Skyrmion host materials, honeycomb lattice materials (such as CoTiOs), Kitaev magnets, etc.
- pyrochlores such as Y2V2O7
- transition metal halides such as CrF, CrBr
- layered ferromagnetic semiconductors such as CrSiTcs, CrGcTcs
- Kagome compounds and their variants such as YMneSne, FeSn
- HCP magnets
- a magnetic field H is applied orthogonal to a thermal gradient ATzz, and a thermal gradient ATzx is obtained that is orthogonal to both the applied magnetic field H and the applied thermal gradient ATzz.
- a thin metal layer is deposited over the magnetic layer 104 and measuring a thermopower which develops across the metal layer.
- the thermopower measured using such a set up may have favorable signal-to-noise ratio.
- FIGs. 2A and 2B illustrate exemplary plots 200, 250 depicting variations in thermopower developed in the metal layer with change in applied magnetic field H, when the metal layer is platinum and tungsten, respectively.
- the measurements were performed with the magnetic field H applied along a crystallographic [100] direction.
- the voltage is asymmetric as a function of the applied magnetic field H, and in accordance with the magnon Hall effect expected in the pyrochlore system.
- FIGs. 3A and 3B illustrate exemplary plots 300, 350 depicting variations in thermopower developed in the metal layer with change in applied magnetic field H, when the metal layer is platinum and tungsten, respectively.
- some pyrochlore materials may support topologically protected surface magnon states.
- the voltages measured with the magnetic field applied along the crystallographic [111] direction is shown in FIGs. 3 A and 3B.
- An additional (symmetric) voltage may be seen to have been added to the (antisymmetric) voltage arising from the magnon Hall effect.
- this voltage changes its sign, when a tungsten layer (bottom panel) is used instead of a platinum layer (top panel), owing to the difference in the material properties between platinum and tungsten.
- FIG. 4 illustrates a schematic representation of the device 100 indicating interfacial magnon drag, according to an embodiment of the present disclosure.
- This additional voltage arising may be due to the interfacial magnon drag, wherein a magnon current is detected by means of the force they exert on the charge carriers of an adjacent material.
- a magnon current is detected by means of the force they exert on the charge carriers of an adjacent material.
- such a phenomenon may be exhibited with a number of different capping layers.
- FIG. 5 illustrates a flow chart of the method for detecting topologically protected surface magnons, according to an embodiment of the present disclosure.
- the method 500 for detecting topologically protected surface magnons includes depositing a conducting layer on top of a magnetic layer to define a measurement geometry.
- the energy source configured to apply magnetic field to induce magnon spin currents on the surface of the magnetic layer and at block 506, detecting an electrical voltage generated as a result of the interfacial magnon drag, wherein the magnon spin current on the surface of the magnetic layer exerts a dragging force on the charge carriers in the conducting layer, resulting in the generation of the electrical voltage.
- the present invention provides a device that provides an electrical means of detecting and characterizing topological magnons, allowing for precise measurements and analysis.
- the present invention provides the use of interfacial magnon drag as a detection mechanism enables the generation of an electrical voltage, providing a clear and measurable signal for the presence of topologically protected surface magnons.
- the present invention provides the device that opens up possibilities for the development of magnon-based spintronic devices that utilize the unique properties and behavior of topological magnons.
- the present invention contributes to the advancement of magnon-based research and technology, with potential implications for future applications in information processing, data storage, and communication systems.
Abstract
The present disclosure provides a device (100) for detecting topologically protected surface magnons. The device includes a measurement geometry including a metal (102) deposited on top of a ferromagnet (104). The device may utilize the phenomena of interfacial magnon drag, wherein a magnon spin current on the magnet surface drags the charge carriers in the adjoining material, thereby giving rise to an electrical voltage.
Description
DEVICE AND METHOD FOR MEASURING TOPOLOGICALLY PROTECTED SURFACE MAGNON
TECHNICAL FIELD
[0001] The present disclosure relates to topologically protected surface magnon states. In particular, the present disclosure provides a means to measure topologically protected surface magnon states.
BACKGROUND
[0002] Background description includes information that may be useful in understanding the present invention. It is not an admission that any of the information provided herein is prior art or relevant to the presently claimed invention, or that any publication specifically or implicitly referenced is prior art.
[0003] The non-trivial topology of quasiparticle wavefunctions are now known to manifest themselves in the form of observable surface states. Since electronic topology can be probed relatively easily using standard spectroscopy and electronic transport techniques, most advances have been in the area of electronic materials. For instance, a number of potential (electronic and/or optical) devices and sensors based on topological electronic materials have been proposed. However, topological properties are not restricted to electronic systems alone. Another area where topology is expected to be important, is magnetic materials, where the topology of the magnon band structure could result in interesting phenomena and device applications. However, the existence of topologically protected magnon surface states remains to be experimentally demonstrated.
OBJECTS OF THE PRESENT DISCLOSURE
[0004] An object of the present disclosure relates to topologically protected surface magnon states. In particular, the present disclosure provides a means to measure topologically protected surface magnon states.
[0005] Another object of the present disclosure is to provide a device capable of detecting and characterizing topologically protected surface magnons.
[0006] Yet another object of the present disclosure is to utilize the measurement geometry comprising a metal layer on top of a ferromagnetic material and the physical mechanism of interfacial magnon drag enables the electrical detection and exploration of the unique properties of topological magnons.
SUMMARY
[0007] The present disclosure relates in general, to topologically protected surface magnon states. In particular, the present disclosure provides a means to measure topologically protected surface magnon states. The main objective of the present disclosure is to overcome the drawback, limitations, and shortcomings of the existing device and solution, by providing a device designed for the detection of topologically protected surface magnons.
[0008] The device consists of a measurement geometry featuring a metal layer deposited on the surface of a ferromagnetic material. By utilizing the phenomenon of interfacial magnon drag, wherein a magnon spin current on the magnet surface exerts a dragging force on the charge carriers in the adjacent material, an electrical voltage is generated. This device provides a means to electrically detect and measure topologically protected surface magnons, offering valuable insights into their properties and behavior. The interplay between the metal layer and the ferromagnet enables the observation and analysis of these unique magnonic states, opening up possibilities for the development of magnon-based devices and applications.
[0009] Various objects, features, aspects, and advantages of the inventive subject matter will become more apparent from the following detailed description of preferred embodiments, along with the accompanying drawing figures in which like numerals represent like components.
BRIEF DESCRIPTION OF DRAWINGS
[0010] The accompanying drawings are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure.
[0011] FIG. 1 illustrates a schematic view of a device for measuring magnon currents, according to an embodiment of the present disclosure;
[0012] FIGs. 2A and 2B illustrate exemplary plots depicting variation in thermopower developed in the metal layer with change in applied magnetic field H, when the metal layer is platinum and tungsten, respectively;
[0013] FIGs. 3A and 3B illustrate exemplary plots depicting variation in thermopower developed in the metal layer with change in applied magnetic field H, when the metal layer is platinum and tungsten, respectively; and
[0014] FIG. 4 illustrates a schematic representation of the device indicating interfacial magnon drag, according to an embodiment of the present disclosure.
[0015] FIG. 5 illustrates a flow chart of the method for detecting topologically protected surface magnons, according to an embodiment of the present disclosure.
DETAILED DESCRIPTION
[0016] The following is a detailed description of embodiments of the disclosure depicted in the accompanying drawings. The embodiments are in such details as to clearly communicate the disclosure. However, the amount of detail offered is not intended to limit the anticipated variations of embodiments; on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the present disclosure as defined by the appended claims.
[0017] Magnons refer to a quanta of collective spin wave excitations. Magnons may be used to develop a platform where a topology of a magnon band structure may manifest itself in the form of observable surface states which are distinct from the bulk. Such topological magnons may have properties distinct from their bulk counterparts and may thus have important implications in magnon based spintronic devices. The existence of topologically protected magnon (surface) states remains to be experimentally demonstrated, owing to the fact that conventional measurement techniques, such as inelastic neutron scattering, or Brillouin light scattering, are relatively insensitive to surface magnon states.
[0018] In some embodiments, the present disclosure provides a means to demonstrate the existence of topologically protected surface magnons using an electrical based detection methodology. This is achieved by the means of a new physical mechanism of interfacial magnon drag, where the magnon currents in a surface of a material is detected by means of a force imposed by the magnon currents on charge carriers of an adjacent layer.
[0019] In some embodiments, the present disclosure further provides a device for detecting the topologically protected surface magnons. The device used to infer the presence of magnon surface states includes a measurement geometry including a metal deposited on top of a ferromagnet. The device may utilize the phenomena of interfacial magnon drag, wherein a magnon spin current on the magnet surface drags the charge carriers in the adjoining material, thereby giving rise to an electrical voltage. Generally, the magnon band structure in a number of quantum materials may exhibit topologically protected attributes. Being able to infer magnon topology using electrical means may have far reaching applications in many areas, including that of dissipation-less spin transport, magnonic
crystals, light-induced magnonic phenomena, and magnon-based quantum information processing.
[0020] FIG. 1 illustrates a schematic view of a device 100 for measuring magnon currents, according to an embodiment of the present disclosure.
[0021] The device includes a conducting layer 102 disposed on top of a magnetic layer 104. The conducting layer 102 disposed on top of a magnetic layer 104 to define a measurement geometry. An energy source configured to apply a magnetic field to induce magnon spin currents on the surface of the magnetic layer 104, where the magnon spin current on the surface of the magnetic layer 104 exerts a dragging force on the charge carriers in the conducting layer 102, resulting in the generation of an electrical voltage. The energy source in the present disclosure can encompass various forms, including temperature gradients, microwaves, acoustic waves, light, electric fields, or any combination thereof.
[0022] The conducting layer 102 facilitates the collection of charge carriers affected by the dragging force exerted by the magnon spin currents on the magnet surface, where the interfacial magnon drag gives rise to the electrical voltage indicative of the strength and direction of the magnon spin currents. The electrical voltage generated as a result of the interfacial magnon drag is measured to characterize the magnon spin currents.
[0023] In some embodiments, the conducting layer 102 may include any material, such as a metal or a semi-conductor that includes a finite number of charge carriers, such as platinum, tungsten, etc.
[0024] The magnetic layer 104 comprises ferromagnetic material. The ferromagnetic material selected from topologically protected magnon surface states, including pyrochlores, transition metal halides, layered ferromagnetic semiconductors, Kagome compounds and their variants, hexagonal closed packed (HCP) magnets, Skyrmion crystals or Skyrmion host materials, honeycomb lattice materials, and Kitaev magnets. As can be appreciated, the present disclosure is not limited to ferromagnetic materials and can be extended to include other magnetic materials, such as ferro, antiferro, or ferri-magnetic materials.
[0025] In some embodiments, the magnetic layer 104 may include the material that possesses the topologically protected magnon surface states. Some examples of the materials may include, without limitations, pyrochlores (such as Y2V2O7), transition metal halides (such as CrF, CrBr , layered ferromagnetic semiconductors (such as CrSiTcs, CrGcTcs), Kagome compounds and their variants (such as YMneSne, FeSn), HCP magnets such as Gd, Skyrmion crystals or Skyrmion host materials, honeycomb lattice materials (such as CoTiOs), Kitaev magnets, etc.
[0026] In some embodiments, a magnetic field H is applied orthogonal to a thermal gradient ATzz, and a thermal gradient ATzx is obtained that is orthogonal to both the applied magnetic field H and the applied thermal gradient ATzz. In order to determine the thermal gradient ATzx, a thin metal layer is deposited over the magnetic layer 104 and measuring a thermopower which develops across the metal layer. In some embodiments, the thermopower measured using such a set up may have favorable signal-to-noise ratio.
[0027] FIGs. 2A and 2B illustrate exemplary plots 200, 250 depicting variations in thermopower developed in the metal layer with change in applied magnetic field H, when the metal layer is platinum and tungsten, respectively. The measurements were performed with the magnetic field H applied along a crystallographic [100] direction. The voltage is asymmetric as a function of the applied magnetic field H, and in accordance with the magnon Hall effect expected in the pyrochlore system.
[0028] FIGs. 3A and 3B illustrate exemplary plots 300, 350 depicting variations in thermopower developed in the metal layer with change in applied magnetic field H, when the metal layer is platinum and tungsten, respectively. In some cases, when the magnetic field H is not along the crystallographic [100] direction, some pyrochlore materials may support topologically protected surface magnon states. The voltages measured with the magnetic field applied along the crystallographic [111] direction is shown in FIGs. 3 A and 3B. As is evident, the signals look quite different from the earlier case. An additional (symmetric) voltage may be seen to have been added to the (antisymmetric) voltage arising from the magnon Hall effect. Interestingly, this voltage changes its sign, when a tungsten layer (bottom panel) is used instead of a platinum layer (top panel), owing to the difference in the material properties between platinum and tungsten.
[0029] FIG. 4 illustrates a schematic representation of the device 100 indicating interfacial magnon drag, according to an embodiment of the present disclosure. This additional voltage arising may be due to the interfacial magnon drag, wherein a magnon current is detected by means of the force they exert on the charge carriers of an adjacent material. In some embodiments, such a phenomenon may be exhibited with a number of different capping layers.
[0030] FIG. 5 illustrates a flow chart of the method for detecting topologically protected surface magnons, according to an embodiment of the present disclosure.
[0031] The method 500 for detecting topologically protected surface magnons. The method at block 502 includes depositing a conducting layer on top of a magnetic layer to
define a measurement geometry. At block 504, the energy source configured to apply magnetic field to induce magnon spin currents on the surface of the magnetic layer and at block 506, detecting an electrical voltage generated as a result of the interfacial magnon drag, wherein the magnon spin current on the surface of the magnetic layer exerts a dragging force on the charge carriers in the conducting layer, resulting in the generation of the electrical voltage.
[0032] It should be apparent to those skilled in the art that many more modifications besides those already described are possible without departing from the inventive concepts herein. The inventive subject matter, therefore, is not to be restricted except in the spirit of the appended claims. Moreover, in interpreting both the specification and the claims, all terms should be interpreted in the broadest possible manner consistent with the context. In particular, the terms “comprise” and “comprising” should be interpreted as referring to elements, components, or steps in a non-exclusive manner, indicating that the referenced elements, components, or steps may be present, or utilized, or combined with other elements, components, or steps that are not expressly referenced. Where the specification claims refer to at least one of something selected from the group consisting of A, B, C . . . .and N, the text should be interpreted as requiring only one element from the group, not A plus N, or B plus N, etc. The foregoing description of the specific embodiments will so fully reveal the general nature of the embodiments herein that others can, by applying current knowledge, readily modify and/or adapt for various applications such specific embodiments without departing from the generic concept, and, therefore, such adaptations and modifications should and are intended to be comprehended within the meaning and range of equivalents of the disclosed embodiments. It is to be understood that the phraseology or terminology employed herein is for the purpose of description and not of limitation. Therefore, while the embodiments herein have been described in terms of preferred embodiments, those skilled in the art will recognize that the embodiments herein can be practiced with modification within the spirit and scope of the appended claims.
[0033] While the foregoing describes various embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof. The scope of the invention is determined by the claims that follow. The invention is not limited to the described embodiments, versions, or examples, which are included to enable a person having ordinary skill in the art to make and use the invention when combined with information and knowledge available to the person having ordinary skill in the art.
ADVANTAGES OF THE PRESENT INVENTION
[0034] The present invention provides a device that provides an electrical means of detecting and characterizing topological magnons, allowing for precise measurements and analysis. [0035] The present invention provides the use of interfacial magnon drag as a detection mechanism enables the generation of an electrical voltage, providing a clear and measurable signal for the presence of topologically protected surface magnons.
[0036] The present invention provides the device that opens up possibilities for the development of magnon-based spintronic devices that utilize the unique properties and behavior of topological magnons.
[0037] The present invention contributes to the advancement of magnon-based research and technology, with potential implications for future applications in information processing, data storage, and communication systems.
Claims
1. A device (100) for detecting topologically protected surface magnons, the device comprising: a conducting layer (102) disposed on top of a magnetic layer (104) to define a measurement geometry; and an energy source configured to apply a magnetic field to induce magnon spin currents on the surface of the magnetic layer (104), wherein the magnon spin current on the surface of the magnetic layer exerts a dragging force on the charge carriers in the conducting layer, resulting in the generation of an electrical voltage.
2. The device as claimed in claim 1, wherein the conducting layer selected from the group consisting of metals and semiconductors, including platinum, tungsten, and other suitable materials with a finite number of charge carriers.
3. The device as claimed in claim 1, wherein the magnetic layer selected from ferromagnetic material, ferro, antiferro, ferri-magnetic materials and any combination thereof.
4. The device as claimed in claim 3, wherein the ferromagnetic material selected from pyrochlores, transition metal halides, layered ferromagnetic semiconductors, Kagome compounds and their variants, HCP magnets, Skyrmion crystals or Skyrmion host materials, honeycomb lattice materials, and Kitaev magnets.
5. The device as claimed in claim 1, wherein the conducting layer (102) facilitates the collection of charge carriers affected by the dragging force exerted by the magnon spin currents on the magnet surface, wherein the interfacial magnon drag gives rise to the electrical voltage indicative of the strength and direction of the magnon spin currents.
6. The device as claimed in claim 1, wherein the magnetic field H is applied orthogonal to a thermal gradient ATzz, resulting in a thermal gradient ATzx that is orthogonal to both the applied magnetic field H and the applied thermal gradient ATzz.
7. The device as claimed in claim 1, wherein the measurement of thermopower using such a setup provides a favorable signal-to-noise ratio, facilitating accurate detection of topologically protected magnon surface states.
8. The device as claimed in claim 1, wherein the electrical voltage generated as a result of the interfacial magnon drag is measured to characterize the magnon spin currents.
9. A method (500) for detecting topologically protected surface magnons, the method comprising: depositing (502) a conducting layer on top of a magnetic layer to define a measurement geometry; applying (504), by an energy source, a magnetic field to induce magnon spin currents on the surface of the magnetic layer; and detecting (506) an electrical voltage generated as a result of the interfacial magnon drag, wherein the magnon spin current on the surface of the magnetic layer exerts a dragging force on the charge carriers in the conducting layer, resulting in the generation of the electrical voltage.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IN202221043561 | 2022-07-29 | ||
IN202221043561 | 2022-07-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2024023807A1 true WO2024023807A1 (en) | 2024-02-01 |
Family
ID=89705668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2023/057737 WO2024023807A1 (en) | 2022-07-29 | 2023-07-29 | Device and method for measuring topologically protected surface magnon |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2024023807A1 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190207093A1 (en) * | 2017-12-25 | 2019-07-04 | Institute Of Physics, Chinese Academy Of Sciences | Magnon spin valve, magnon sensor, magnon field effect transistor, magnon tunnel junction and magnon memory |
-
2023
- 2023-07-29 WO PCT/IB2023/057737 patent/WO2024023807A1/en unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190207093A1 (en) * | 2017-12-25 | 2019-07-04 | Institute Of Physics, Chinese Academy Of Sciences | Magnon spin valve, magnon sensor, magnon field effect transistor, magnon tunnel junction and magnon memory |
Non-Patent Citations (3)
Title |
---|
COSTACHE MARIUS V., BRIDOUX GERMAN, NEUMANN INGMAR, VALENZUELA SERGIO O.: "Magnon-drag thermopile", NATURE MATERIALS, NATURE PUBLISHING GROUP UK, LONDON, vol. 11, no. 3, 1 March 2012 (2012-03-01), London, pages 199 - 202, XP093135666, ISSN: 1476-1122, DOI: 10.1038/nmat3201 * |
HU SHAOJIE, ITOH HIROYOSHI, KIMURA TAKASHI: "Efficient thermal spin injection using CoFeAl nanowire", NPG ASIA MATERIALS, NATURE JAPAN KK, JP, vol. 6, no. 9, 1 September 2014 (2014-09-01), JP , pages e127 - e127, XP093135675, ISSN: 1884-4049, DOI: 10.1038/am.2014.74 * |
SLACHTER A., BAKKER F. L., ADAM J-P., VAN WEES B. J.: "Thermally driven spin injection from a ferromagnet into a non-magnetic metal", NATURE PHYSICS, NATURE PUBLISHING GROUP, LONDON, GB, vol. 6, no. 11, 1 November 2010 (2010-11-01), GB , pages 879 - 882, XP093135668, ISSN: 1745-2473, DOI: 10.1038/nphys1767 * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Dearing et al. | Geomorphological linkages between soils and sediments: the role of magnetic measurements | |
EP3631487B1 (en) | Magnetic field sensor with error calculation | |
Schotter et al. | A biochip based on magnetoresistive sensors | |
US10060880B2 (en) | Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensing | |
Pallas-Areny et al. | Sensors and signal conditioning | |
US9310446B2 (en) | Magnetic field direction detector | |
US20200056975A1 (en) | Magnetic induction particle detection device and concentration detection method | |
Praslicka et al. | Possibilities of measuring stress and health monitoring in materials using contact-less sensor based on magnetic microwires | |
EP2250514B1 (en) | Devices using addressable magnetic tunnel junction array to detect magnetic particles | |
CN101084449A (en) | Method and device for characterization of a magnetic field applied to a magnetic sensor | |
Djamal | Development of sensors based on giant magnetoresistance material | |
Corodeanu et al. | Accurate measurement of domain wall velocity in amorphous microwires, submicron wires, and nanowires | |
Pokorný et al. | A multi-function Kappabridge for high precision measurement of the AMS and the variations of magnetic susceptibility with field, temperature and frequency | |
US7913570B2 (en) | Environmental damage sensor | |
KR101181697B1 (en) | Cross type magnetic array sensors for biomolecules magnetic bead detection | |
WO2024023807A1 (en) | Device and method for measuring topologically protected surface magnon | |
Kim | The defect detection in HTS films on third-harmonic voltage method using various inductive coils | |
Uozaki et al. | Antiferromagnetic Ordering in the Conducting π-d System κ-(BEDT-TSF) 2 FeCl 4 (where BEDT-TSF is Bis (ethylenedithio) tetraselenafulvalene, C 10 S 4 Se 4 H 8) | |
Feng et al. | Detection of magnetic microbeads and ferrofluid with giant magnetoresistance sensors | |
CN204330768U (en) | A kind of magnetosensitive bio-sensor system with signal calibration function | |
Ipatov et al. | Symmetry breaking effect of dc bias current on magnetoimpedance in microwire with helical anisotropy: Application to magnetic sensors | |
Hristoforou et al. | On a new principle of a smart multisensor based on magnetic effects | |
CA2754181C (en) | Environmental damage sensor | |
EP4257929A1 (en) | Physical quantity measurement system and/or position measurement with bistable magnetic wire, method of measurement | |
JP2008101939A (en) | Matter detecting device and matter detection method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 23845826 Country of ref document: EP Kind code of ref document: A1 |