WO2024022743A1

WO2024022743A1 - Metal-ceramic substrate with contact area

Info

Publication number: WO2024022743A1
Application number: PCT/EP2023/068188
Authority: WO
Inventors: Martin Sattler; Andre SCHWÖBEL; Richard Wacker; Daniel Schnee
Original assignee: Heraeus Electronics Gmbh & Co. Kg
Priority date: 2022-07-29
Filing date: 2023-07-03
Publication date: 2024-02-01
Also published as: EP4311818A1

Abstract

The invention relates to a metal-ceramic substrate and to an electronic component comprising a metal-ceramic substrate. The metal-ceramic substrate comprises: a) a ceramic body which has a main extension plane, b) a metal layer which is connected to the ceramic body in a planar manner, the metal layer having a structuring region which comprises (i) solid material in some areas and (ii) non-solid material in some areas, and c) a contact region arranged on the metal layer and comprising silver, characterised in that, in a cross-section through the metal-ceramic substrate perpendicular to the main extension plane, the structuring region has a geometry in which the following requirement is met: A (BCDsolid) / A (BCDtotal) > 70%, wherein A (BCDtotal) represents the total area of the triangle described by the points B, C and D, and A (BCDsolid) represents the area of the triangle described by the points B, C and D which is occupied by solid material.

Description

Metal-ceramic substrate with contact area

DESCRIPTION

The present invention relates to a metal-ceramic substrate and an electronic component comprising a metal-ceramic substrate.

Metal-ceramic substrates play an important role in the field of power electronics. They are a crucial element in the construction of electronic components and ensure that large amounts of heat are quickly dissipated during the operation of these components. Metal-ceramic substrates usually consist of a ceramic layer and a metal layer bonded to the ceramic layer.

Several methods are known from the prior art for connecting the metal layer to the ceramic layer. In the so-called DCB (“Direct Copper Bonding”) process, a copper foil is surface-coated with a copper compound (usually copper oxide), which has a lower melting point than copper, by reacting copper with a reactive gas (usually oxygen). When the copper foil treated in this way is applied to a ceramic body and the composite is heated, the copper compound melts and wets the surface of the ceramic body, so that a stable, cohesive connection occurs between the copper foil and the ceramic body. This process is described, for example, in US 3744120 A or DE 2319854 C2.

In an alternative method, metal foils can be bonded to ceramic bodies at temperatures of about 650 to 1000 ° C using a special solder containing a metal with a melting point of at least 700 ° C (usually silver) and an active metal. The role of the active metal is to react with the ceramic material and thus enable the ceramic material to be bonded to the remaining solder to form a reaction layer, while the metal with a melting point of at least 700 ° C serves to bond this reaction layer to the metal foil. For example, JP4812985 B2 suggests connecting a copper foil to a ceramic body using a solder that contains 50 to 89 percent by weight of silver as well as copper, bismuth and an active metal. This process makes it possible to reliably join the copper foil to the ceramic body. Alternatively, silver-free solders can also be used Connection of metal foils with ceramic bodies are used. These solders are based, for example, on high-melting metals (especially copper), low-melting metals (such as bismuth, indium or tin) and active metals (such as titanium). Such a technique is proposed, for example, in DE 102017114893 A1. This technology essentially leads to a new, independent class of connections, since the basis of the solders used is formed by a different metal (copper instead of silver), which leads to changed material properties and an adjustment with regard to the other solder components and modified joining conditions .

When building electronic components, metal-ceramic substrates are usually equipped with a chip. In order to equip the metal-ceramic substrate with a chip, it is generally necessary that the area of the metal-ceramic substrate to be equipped with the chip is provided with a silver-containing contact area. Providing the silver-containing contact area makes it easier to connect the chip to the metal-ceramic substrate using common processes such as sintering or soldering. To create the contact area, the metal-ceramic substrate is usually first treated in areas with an etching solution in order to form a desired structure. The contact area is then provided by producing a silver-containing coating in areas on the surface of the structured metal-ceramic substrate.

As part of electronic components, the metal-ceramic substrates produced in this way are usually exposed to high temperature changes during operation. While during breaks in operation - depending on the environment - the temperatures can be -20°C or less, for example, the temperature of the metal-ceramic substrates can easily rise to over 150°C during operation. The metal-ceramic substrates are repeatedly exposed to these temperature differences. Due to the different thermal expansion coefficients of the metal and the ceramic, repeated temperature changes can cause the metal layer to detach from the ceramic body (peeling), which results in a loss of performance. A high resistance to temperature changes is therefore a key criterion for the suitability of metal-ceramic substrates for applications in electronics, especially in power electronics.

It would therefore be desirable to further increase the thermal shock resistance of metal-ceramic substrates. An object of the present invention is therefore to provide a metal-ceramic substrate which has increased resistance to thermal shock.

This object is achieved by the metal-ceramic substrate of claim 1. The invention therefore provides a metal-ceramic substrate comprising a) a ceramic body which has a main extension plane, b) a metal layer which is connected flatly to the ceramic body, wherein the metal layer has a structuring area which

(i) solid material in areas and

(ii) partially comprises non-solid material, and c) a contact region arranged on the metal layer comprising silver, characterized in that in a cross section through the metal-ceramic substrate perpendicular to the main extension plane, the structuring region has a geometry, the following requirement being met :

A (BCDsoiid) / A (BCDtotai) > 70%, where

A (BCDtotai) stands for the total area of the triangle described by points B, C and D, and

A (BCDsoiid) represents the area of the triangle described by points B, C and D occupied by solid material, where points B, C and D are determined as follows:

1. the equilibrium line between the ceramic body and the metal layer is determined;

2. the contour line is determined that separates the solid material from the non-solid material; 3. Point A is determined on a perpendicular to the equilibrium line at a distance of 150 pm from the equilibrium line, at which the perpendicular to the equilibrium line intersects the contour line;

4. Point B is determined on a perpendicular to the equilibrium line at a distance of 80 pm from the equilibrium line, at which the perpendicular to the equilibrium line intersects the contour line;

5. on a straight line that passes through points A and B, the point C is determined at which the straight line intersects the best-fit straight line;

6. On a perpendicular to the best-fit line that runs through point B, the point D is determined at which the perpendicular intersects the best-fit line.

The invention further relates to an electronic component having such a metal-ceramic substrate and a chip.

The metal-ceramic substrate according to the invention comprises a ceramic body which has a main extension plane.

The ceramic body is preferably a body made of ceramic. The body can have any geometry, but is preferably designed as a cuboid. The ceramic body has boundary surfaces, in the case of a cuboid six boundary surfaces. The main boundary surface is preferably referred to herein as the boundary surface with the largest surface area, which is connected to the metal layer in a flat area. The main boundary surface preferably lies in the main extension plane or runs parallel to it. Accordingly, the main extension plane of the ceramic body is preferably understood to be a plane that runs parallel to or encloses the main boundary surface of the ceramic body.

The ceramic of the ceramic body is preferably an insulating ceramic. According to a preferred embodiment, the ceramic is selected from the group consisting of

Oxide ceramics, nitride ceramics and carbide ceramics exist. According to a further preferred embodiment, the ceramic is selected from the group consisting of

Metal oxide ceramics, silicon oxide ceramics, metal nitride ceramics, silicon nitride ceramics, boron nitride ceramics and boron carbide ceramics. According to a particularly preferred embodiment, the ceramic is selected from the group consisting of Aluminum nitride ceramics, silicon nitride ceramics and aluminum oxide ceramics (such as ZTA (“Zirconia Toughened Alumina”) ceramics). According to a further particularly preferred embodiment, the ceramic body consists of (1) at least one element selected from the group consisting of silicon and aluminum, (2) at least one element selected from the group consisting of oxygen and Nitrogen consists of, optionally (3) at least one element selected from the group consisting of (3a) rare earth metals, (3b) metals of the second main group of the periodic table of the elements, (3c) zirconium, (3d) copper, (3e) molybdenum and (3f) silicon, and optionally (4) unavoidable impurities. According to yet another particularly preferred embodiment, the ceramic body is free of bismuth, gallium and zinc.

The ceramic body preferably has a thickness of 0.05 - 10 mm, more preferably in the range of 0.1 - 5 mm and particularly preferably in the range of 0.15 - 3 mm.

The metal-ceramic substrate according to the invention comprises a metal layer which is connected flatly to the ceramic body, the metal layer having a structuring region which comprises (i) partially solid material and (ii) partially non-solid material.

The metal layer is preferably bonded to the ceramic body. According to a preferred embodiment, the metal layer is connected to the ceramic body via a DCB (Direct Copper Bonding) process. According to a further preferred embodiment, the metal layer is connected to the ceramic body using a brazing process. The brazing process can be, for example, an AMB (Active Metal Brazing) process, preferably silver-free brazing alloys (the silver content is then, for example, less than 1.0 percent by weight based on the solids content of the brazing alloy) or silver-containing brazing alloys ( the silver content is then, for example, at least 50 percent by weight based on the solids content of the brazing solder). Consequently, the metal layer can also include a connection layer that is in contact with the ceramic body. The connecting layer can be, for example, a solder layer (in particular a brazing layer) or a diffusion layer.

The metal layer is connected flat to the ceramic body. Accordingly, the metal layer is preferably connected to the main boundary surface of the ceramic body. The metal layer is preferably not with the entire main boundary surface of the ceramic body connected. In particular, it can be provided that the main boundary area of the ceramic body is larger than the area of the metal layer connected to the ceramic body. In these cases, the main boundary surface of the ceramic body protrudes. In addition, the metal layer is preferably structured. Structuring is preferably understood to mean recesses in the metal layer in order to separate individual sections of the metal layer from one another and thus electrically insulate them. Such structures are usually created using etching techniques.

Accordingly, the metal layer has a structuring area. A structuring area is understood to be a section of the metal layer that contains structuring. Structuring is preferably a recess in the metal layer.

The metal layer also has a main metal surface on the upper side (preferably facing away from the main boundary surface of the ceramic body) that is parallel to the main boundary surface of the ceramic body. This main metal surface therefore includes metal of the metal layer, which is interrupted by the recess in the structuring area.

The structuring region has a region that includes solid material and a region that includes non-solid material.

The region comprising solid material preferably contains at least one member from the group consisting of (i) metal of the metal layer (optionally including a connection layer (if present, for example in the case of AMBs), (ii) metal of the contact region (in particular silver ) and (iii) material of the ceramic body. Therefore, the solid material preferably contains (i) metal of the metal layer (optionally including a connecting layer) and optionally (ii) metal of the contact area (in particular silver) and / or (iii) material of the ceramic body.

According to a preferred embodiment, the structuring area between the main metal surface (except for the contact area) and the main boundary surface of the ceramic body does not include the main metal of the contact area, in particular no silver. According to a further preferred embodiment, the solid material of the structuring region between the main metal surface (except for the contact region) and the main boundary surface of the ceramic body has no deposition of the main metal the contact area, especially silver. Accordingly, according to a particularly preferred embodiment, the solid material of the structuring region between the main metal surface (except for the contact region) and the main boundary surface of the ceramic body does not have a layer made of the main metal of the contact region, in particular silver. The main metal of the contact area is preferably the metal that has the highest proportion by weight in the contact area.

The region comprising non-solid material preferably contains gaseous material. Therefore, the non-solid material preferably includes gaseous material. The non-solid material is preferably gaseous material with which the recess in the metal layer is filled. This gaseous material usually comes from the surrounding atmosphere. Preferably, the gaseous material therefore contains at least one element selected from the group consisting of nitrogen, oxygen and noble gases. The gaseous material is most preferably air.

According to a preferred embodiment, the recess extends in a direction perpendicular to the main boundary surface of the ceramic body from the main boundary surface of the ceramic body to the main metal surface. The recess preferably forms a channel which is at least 50 percent by volume, more preferably at least 80 percent by volume, even more preferably at least 90 percent by volume, particularly preferably at least 95 percent by volume and most preferably at least 99 percent by volume, in particular completely, with not -filled with solid material.

The metal layer preferably comprises at least one metal selected from the group consisting of copper, aluminum and molybdenum. According to a particularly preferred embodiment, the metal layer comprises at least one metal selected from the group consisting of copper and molybdenum. According to a particularly preferred embodiment, the metal layer comprises copper. According to a further preferred embodiment, the metal layer consists of copper and unavoidable impurities. According to a further preferred embodiment, the proportion of copper is at least 60 percent by weight, more preferably at least 65 percent by weight, even more preferably at least 70 percent by weight and particularly preferably at least 75 percent by weight, based on the total weight of the metal layer (preferably including any connecting layer that may be included). According to a preferred embodiment, the metal layer is produced by materially bonding a copper foil (preferably a foil made of high-purity copper) to a ceramic body. According to a preferred embodiment, the connection can be made via a DCB (Direct Copper Bonding) process or via a brazing process. The brazing process can be, for example, an AMB (Active Metal Brazing) process, preferably silver-free brazing alloys (the silver content is then, for example, less than 1.0 percent by weight based on the solids content of the brazing alloy) or silver-containing brazing alloys ( the silver content is then, for example, at least 50 percent by weight based on the solids content of the brazing solder). In this case, in addition to the copper coming from the copper foil, the metal layer can also include metals of a connecting layer, in particular metals of a solder layer (for example a brazing layer) or a diffusion layer.

The metal layer preferably has a thickness in the range of 0.01 - 10 mm, particularly preferably in the range of 0.03 - 5 mm and very particularly preferably in the range of 0.05 - 3 mm.

The metal-ceramic substrate according to the invention has a contact area comprising silver arranged on the metal layer. The contact area preferably serves to facilitate the connection of a semiconductor to the metal layer. Semiconductors are preferably connected to the metal layer by sintering, soldering or gluing. Since in particular attaching semiconductors to the metal of the metal layer of a metal-ceramic substrate is not easily possible, the metal layer is preferably provided with a contact area. The contact area preferably consists of silver or an alloy containing silver. In the case of a silver-containing alloy, it contains at least 50 percent by weight of silver, based on the weight of the silver alloy. Preferably, a contact area is provided on the metal layer of the metal-ceramic substrate at all positions where the metal-ceramic substrate is to be equipped with semiconductors later. The contact area can be formed on the metal layer of the metal-ceramic substrate by different techniques. For example, it is possible to provide the contact area by deposition. The deposition can be, for example, a physical deposition or a chemical deposition. For example, gas phase deposition can be considered as a physical deposition. Preferred methods for vapor deposition are in particular: Electron beam deposition, laser beam deposition, arc discharge deposition or cathode sputtering. In chemical deposition, the contact area is preferably created by applying a composition containing silver or a silver precursor to the metal layer. For example, a composition containing silver may be fired to produce a sintered bond of the silver contained in the composition to the metal of the metal layer. For example, a composition containing a silver precursor may be subjected to a treatment that releases silver and allows the silver to be adsorbed onto the metal layer. This treatment can be carried out, for example, by contacting the silver precursor with the metal layer. Methods for depositing silver or silver compounds to produce contact areas on the metal layer of metal-ceramic substrates are known to those skilled in the art.

The structuring region of the metal-ceramic substrate has a geometry in a cross section through the metal-ceramic substrate perpendicular to the main extension plane, whereby the following requirement is met:

A (BCDsoiid) / A (BCDtotai) > 70%, where

A (BCDsoiid) stands for the area of the triangle described by points B, C and D, which is occupied by solid material,

According to a preferred embodiment, the structuring region of the metal-ceramic substrate has a geometry in a cross section through the metal-ceramic substrate perpendicular to the main extension plane, wherein the ratio A (BCDsoiid) / A (BCDtotai) is > 75%, more preferably > is 80%, even more preferably >85%, particularly preferably >90% and most preferably >95%.

According to a further preferred embodiment, the structuring region of the metal-ceramic substrate has a geometry in a cross section through the metal-ceramic substrate perpendicular to the main extension plane, the ratio A (BCDsoiid) / A (BCDtotai) in the range of 75 - 100%, particularly preferably in the range of 90 - 100% and most preferably in the range of 95 - 99%.

To determine the triangle described by points B, C and D, a cross section of the structuring area of the metal-ceramic substrate is observed. The cross section runs perpendicular to the main plane of extension of the ceramic body. Preferably, the cross section can be observed by cutting the metal-ceramic substrate perpendicular to the main extension plane of the ceramic body and taking a photograph of the cross section thus obtained using a scanning electron microscope.

The points B, C and D of the triangle can be determined in cross section as described below. For illustrative purposes, reference is made to Figures 1 and 2 as an example.

Figure 1 shows schematically a generic metal-ceramic substrate.

Figure 2 shows part of a cross section through a metal-ceramic substrate according to the invention.

The metal-ceramic substrate 1 shown in Figure 1 has a ceramic body 10. A main extension plane 2 of the ceramic body 10 is indicated (as a line) with the reference number 2. The ceramic body 10 has a main boundary surface 15. The metal-ceramic substrate 1 has a metal layer 20 which is connected flatly to the main boundary surface 15 of the ceramic body 10. In the embodiment according to FIG. 1, the metal-ceramic substrate 1 also has a further metal layer 200, which is connected flatly to the ceramic body 10. On the metal layer 20 there is a contact area 8 containing silver. The metal layer 20 has a structuring. This is formed by a recess 22 in the metal layer 20. The recess 22 contains non-solid material. The structuring region 4 partially comprises the metal layer 20 and the recess 22. Therefore, the structuring region 4 partially comprises solid material 50, which is formed by the metal of the metal layer 20, and non-solid material (for example gaseous material) with which the recess 22 is filled. The gaseous material is usually ambient air. The solid material 50 is separated from the non-solid material of the recess 22 by a contour line 40. The metal layer 20 has one on the top side, which faces away from the main boundary surface 15 of the ceramic Main boundary surface 15 of the ceramic has a parallel metal main surface 24. This metal main surface 24 includes metal of the metal layer 20, which is interrupted by the recess 22 in the structuring area. The recess 22 extends in a direction perpendicular to the main boundary surface 15 of the ceramic from the main boundary surface 15 of the ceramic to the main metal surface 24 and thereby preferably forms a channel which is completely or predominantly filled with non-solid material.

In the part of a cross section through a metal-ceramic substrate according to the invention, which is shown in Figure 2, a section of a structuring area can be seen. An area of the ceramic body 10 is shown, which is connected flatly to an area of a metal layer 20. The contour line 40 separates the solid material 50 from the non-solid material of the recess 22 in the metal layer 20.

The determination of points B and C of the section BC in the cross section is preferably carried out in several steps:

In a first step, the equilibrium line 30 between the ceramic body 10 and the metal layer 20 is determined. For this purpose, the area of the ceramic body 10 and the area of the metal layer 20 are optically determined and the compensation line 30 is defined as the boundary between the ceramic body 10 and the metal layer 20 that can be observed in cross section.

In a second step, the contour line 40 is determined, which separates the solid material 50 from the non-solid material of the recess 22. The solid material 50 is determined optically; this is usually the material of the metal layer 20. The non-solid material is also determined optically. The non-solid material is usually gaseous material with which the structuring as a recess 22 in the metal layer 20 is filled.

In a third step, point A is determined on a perpendicular to the compensating line 30 at a distance of 150 pm from the compensating straight line 30, in which the perpendicular to the compensating straight line 30 intersects the contour line 40.

In a fourth step, point B is determined on a perpendicular to the compensating line 30 at a distance of 80 pm from the compensating straight line 30, in which the perpendicular to the compensating straight line 30 intersects the contour line 40. In a fifth step, point C is determined on a straight line that runs through points A and B, in which the straight line intersects the best-fit straight line 30.

In a sixth step, the point D is determined on a perpendicular to the compensating line 30, which runs through point B, in which the perpendicular intersects the compensating line 30.

The cutting of the metal-ceramic substrate perpendicular to the main extension plane of the ceramic body and the recording of the cross section thus obtained by a light microscope (incident light/bright field) are preferably carried out as described below:

In a first step, the metal-ceramic substrate to be examined is first cut perpendicular to a plane spanned by the main metal surface of the metal layer of the metal-ceramic substrate by sawing with a diamond saw blade at low speed and using a lubricant (Exact). cuboid sample blank with a rectangular base area in the range of 100 mm ² to 400 mm ² is cut out. The sample blank therefore has a sample surface that is used for examination. This sample surface therefore runs perpendicular to the plane spanned by the main metal surface of the metal layer of the metal-ceramic substrate before sawing. It therefore has parts of the ceramic body and the metal layer (including any connecting layer that may be present). The sample blank is first embedded in a mold with a low shrinkage epoxy resin (Caldo-Fix, Struers), with the sample surface oriented perpendicular to the mold wall. The epoxy resin is then cured at 75°C in a drying cabinet. After curing, the sample surface of the sample blank is mechanically polished using an automated polishing device (Tegrapol, Struers) to achieve a roughness of 1 pm or less.

In a second step, a structuring area in the metal layer is identified in the analysis zone using a light microscope (Leica, DM6000M, reflected light/bright field) at a magnification of 200x, which includes areas of solid material and areas of non-solid material. Solid material and non-solid material can be clearly distinguished in the structuring area due to the different coloring. The areas A (BCD _SO iid) and A (BCD _to tai) are preferably determined in a standard manner, for example using image evaluation software (for example IMS Client, Imagic).

Preferably, the term “in a cross-section” as used herein refers to a (preferably representative) set of cross-sections, more preferably at least ten cross-sections, most preferably not more than 20 cross-sections and in particular ten cross-sections. The cross sections preferably run parallel to one another and are evenly spaced from one another. Therefore, to determine the ratio A (BCD _SO iid) / A (BCDtotai) for a metal-ceramic substrate to be observed, the following procedure is preferred:

1. At least ten, particularly preferably ten, different cross sections of the structuring area are examined;

2. the ratio A (BCD _SO iid) / A (BCDtotai) is determined for each of these cross sections; and

3. The average value is formed from the ratios A (BCD _SO iid) / A (BCDtotai) for each of these cross sections in order to obtain the ratio A (BCD _SO iid) / A (BCDtotai) for the metal-ceramic substrate to be observed reach.

According to a preferred embodiment, the sample standard deviation SSD of the ratio A (BCD _SO iid) / A (BCDtotai) over at least ten different cross sections of at least one structuring region of the metal layer, more preferably over not more than 20 different cross sections of at least one structuring region of a metal layer, and most particularly preferably over ten different cross sections of at least one structuring region of a metal layer, not more than 10%, more preferably not more than 7%, particularly preferably not more than 5% and very particularly preferably not more than 2%. The sample standard deviation SSD is determined using the following formula:

where: n = number of individual values for the ratio A (BCD _SO iid) / A (BCD _to tai), Xt = individual value for the ratio A (BCD _SO iid) / A (BCDtotai) and

X = average of the individual values for the ratio A (BCD _SO iid) / A (BCDtotai).

Surprisingly, it was found that metal-ceramic substrates with the geometry according to the invention have increased resistance to temperature changes compared to metal-ceramic substrates from the prior art. These metal-ceramic substrates have a high proportion of solid material in the metal layer at the border to the surface of the ceramic body. In contrast, it was found that the proportion of solid material in the metal layer at the border to the surface of the ceramic body is significantly lower in metal-ceramic substrates from the prior art, insofar as these have a contact area containing silver arranged on the metal layer.

Without being bound to an explanation, this could be due to the fact that in the prior art the metal-ceramic substrate produced is usually first structured and then surface-plated with silver to create the contact area. Silver plating is usually carried out by dipping the structured metal-ceramic substrate into a bath with a solution containing silver ions. Metal ions are electrochemically removed from the metal layer of the metal-ceramic substrate and replaced by silver ions. In the context of the invention, it was observed that in this process silver ions are predominantly deposited on the surface of the metal-ceramic substrate, but the metal ions of the metal layer are predominantly dissolved out in an area near the ceramic body (an effect that is caused by masking The structuring cannot be prevented because the masking is undermined by the silver ion-containing solution due to edge structuring in the metal layer). This effect is particularly pronounced when the metal layer is already structured in the area adjacent to the ceramic body and is therefore no longer homogeneous. This leads to a removal of solid material - in particular the metal of the metal foil - from the metal foil in the area near the ceramic body and thus to the creation of a weak point for the metal layer to be detached from the ceramic body, which has a disadvantageous effect on the resistance to temperature changes. According to the invention, on the other hand, a structuring area is created which has sufficient amounts of solid material in the area near the ceramic body, which means that the metal layer is detached from the Ceramic body prevented and an improvement in resistance to temperature changes can be achieved.

According to a preferred embodiment, the metal-ceramic substrate comprises a further (second) metal layer which is connected flatly to the ceramic body. The further metal layer is preferably flatly connected to the boundary surface facing away from the main boundary surface of the ceramic (and preferably running parallel to it). The further (second) metal layer can be like the (first) metal layer or can differ in its nature from the (first) metal layer. Regarding the nature of the further (second) metal layer, reference is made to the explanations above.

The metal-ceramic substrate according to the invention can be used in particular for applications in electronics, especially in the field of power electronics.

The invention therefore also provides an electronic component which has a metal-ceramic substrate as described above.

According to a preferred embodiment, such an electronic component comprises a base plate. This base plate is preferably connected to the surface of the metal layer of the metal-ceramic substrate. Alternatively, the metal layer of the metal-ceramic substrate can be designed as a heat sink. According to a further preferred embodiment, the electronic component comprises at least one chip. The at least one chip is preferably connected flatly to the contact area comprising silver arranged on the metal layer. According to a further preferred embodiment, the electronic component comprises a metal-ceramic substrate having a first metal layer and a second metal layer (the first metal layer preferably being opposite the second metal layer), a base plate and at least one chip, the at least one chip with the first metal layer of the metal-ceramic substrate via the contact area arranged on the metal layer comprising silver and the base plate is connected to the second metal layer of the metal-ceramic substrate.

The metal-ceramic substrate according to the invention can be obtained by different manufacturing processes. According to a preferred embodiment, the method is a method for producing a metal-ceramic substrate which is provided with a structure and a contact area comprising silver, comprising the steps: a) providing a metal-ceramic substrate comprising a1) a ceramic body and a2) a metal layer connected flat to the ceramic body, b) applying a first masking to the metal layer, c) depositing a silver-containing layer on the unmasked areas of the metal layer to obtain a contact area containing silver, d) removing the first masking, e ) applying a second masking to the metal layer, f) etching unmasked areas of the metal layer to obtain structuring and g) removing the second masking.

In this process, a metal-ceramic substrate is therefore preferably first provided. This metal-ceramic substrate has a ceramic body and a metal layer connected flat to the ceramic body. The metal-ceramic substrate can be a standard metal-ceramic substrate. The ceramic body and the metal layer may have a composition as described above with respect to the metal-ceramic substrate. The metal layer can preferably be connected to the ceramic body in a materially bonded manner, as also described above with regard to the metal-ceramic substrate.

In the method, a first masking is preferably applied to the metal layer. The first masking serves to protect the masked areas of the metal layer from deposition of a silver-containing layer in the subsequent step. This ensures that a silver-containing layer is only deposited on the unmasked areas of the metal layer of the metal-ceramic substrate. Consequently, the masking is such that a silver-containing layer is not deposited onto the masked areas of the metal layer of the metal-ceramic substrate. The type of masking is not further restricted. The masking can be, for example, a standard negative mask or positive mask. The masking can be created, for example, by a foil (or a dry film) or a liquid, which is optionally printed or sprayed in areas onto the surface of the metal-ceramic substrate. You can do this For example, standard etching resists can be used. These etch resists preferably contain a curable polymer (for example, a photocurable polymer). According to a possible embodiment, a photosensitive film is applied to the metal layer of the metal-ceramic substrate, which is then exposed to the areas to be masked in order to obtain the first masking. The unexposed areas of the photosensitive film can then be removed in a standard manner (for example using a sodium carbonate solution).

After the first masking has been applied, a silver-containing layer is preferably deposited onto the unmasked areas of the metal layer to obtain a contact area containing silver. The silver-containing layer is preferably a layer which consists of silver or a silver alloy, particularly preferably silver. The silver-containing layer is preferably deposited in a manner customary in the art. The silver-containing layer can, for example, be deposited electrochemically, without electricity or chemically. Chemical deposition by applying a silver-containing solution with a charge exchange between the metals is preferred, with metal of the metal layer partially going into solution while the silver in solution is deposited. According to a preferred embodiment, the silver-containing solution contains a silver salt and particularly preferably silver nitrate. According to a preferred embodiment, the silver-containing solution is an acidic solution of silver nitrate and particularly preferably a nitric acid solution of silver nitrate. The concentration of silver in the nitric acid solution can, for example, be in the range of 0.5 - 1.5 g/l, particularly preferably in the range of 0.6 - 1.4 g/l and very particularly preferably in the range of 0.8 - 1.2 g/l.

Preferably, after a silver-containing layer has been deposited onto the unmasked areas of the metal layer, the first masking is removed to obtain a contact area containing silver. The first masking can be removed in a standard manner. For this purpose, the metal-ceramic substrate can be treated, for example, with an alkaline solution (for example a 2.5% sodium hydroxide solution) in order to remove the first masking.

After removing the first masking, a second masking is preferably applied to the metal layer. The second masking serves to protect the masked areas of the metal layer of the metal-ceramic substrate from etching in the subsequent step. This ensures that only those areas of the metal layer of the metal-ceramic Substrate are accessible for etching, which are unmasked and intended for structuring. Consequently, the masking is such that no etching of the masked areas of the metal layer occurs. According to a preferred embodiment, the second masking is applied to areas of the metal-ceramic substrate to which the first masking has not already been applied. The type of masking is not further restricted. The masking can be, for example, a standard negative mask or positive mask. The masking can be created, for example, by a foil (or a dry film) or a liquid, which is optionally printed or sprayed in areas onto the surface of the metal-ceramic substrate. For example, standard etching resists can be used. These etch resists preferably contain a curable polymer (for example, a photocurable polymer). According to a possible embodiment, a photosensitive film is applied to the partially silver-plated surface of the metal-ceramic substrate, which is then exposed to the areas to be masked in order to obtain the second masking. The unexposed areas of the photosensitive film can then be removed in a standard manner (for example using a sodium carbonate solution).

After the second masking has been applied to the metal layer, unmasked areas of the metal layer are preferably etched to obtain structuring. The etching is preferably carried out in a manner customary in the art. The etching is therefore preferably carried out with a standard etching solution. According to a preferred embodiment, the etching solution is selected from the group consisting of FeC etching solutions and CuCh etching solutions. If necessary, another etching solution can be used, for example to pattern unmasked areas of an optionally included connection layer. According to a preferred embodiment, the further etching solution can be selected from the group consisting of etching solutions containing hydrogen peroxide and etching solutions containing ammonium peroxodisulfate. For example, the further etching solution may be an etching solution containing ammonium fluoride and fluoroboric acid (for example HBF4) as well as hydrogen peroxide and/or ammonium peroxodisulfate.

Preferably, after the etching of unmasked areas of the metal layer, the second masking is removed to obtain structuring. The second masking can be removed in a standard manner. For this purpose, the metal-ceramic substrate can be treated, for example, with an alkaline solution (for example a 2.5% sodium hydroxide solution) in order to remove the second masking. With the method described herein, a metal-ceramic substrate can be obtained which is provided with a structure and a contact area containing silver. By creating a contact area containing silver, easier connection of the chip to the metal-ceramic substrate is made possible using common methods such as sintering or soldering. The metal-ceramic substrate obtained in this way is characterized by a particularly high resistance to temperature changes.

Examples of embodiments

The present invention is described in more detail below using exemplary embodiments, which, however, should not be construed as limiting.

Example:

For the example, a metal-ceramic substrate was used, in which a ceramic body made of a silicon nitride ceramic with dimensions of 177.8 x 139 x 0.32 mm was coated on both sides with a copper layer with dimensions of 170 x 132 x 0.3 mm via an AMB ( Active Metal Brazing) process. This copper-ceramic substrate was first cleaned after production.

A photosensitive film was then applied to both copper layers of the copper-ceramic substrate using a hot roll laminator. The photosensitive film was exposed to 30 mJ/cm ² at each of the areas to be masked in order to harden the polymer contained in the photosensitive film and to obtain the first masking. The unexposed areas of the photosensitive film were then removed wet-chemically using a sodium carbonate solution (concentration = 10 g/l). After applying the first mask, the copper-ceramic substrate was cleaned by rinsing. Silver-containing contact areas were then deposited on the unmasked areas of the copper layers of the copper-ceramic substrate. For this purpose, the copper-ceramic substrate provided with the first mask was first pretreated with a first solution containing hydrogen peroxide and sulfuric acid and then contacted with a nitric acid silver nitrate solution (silver content = 1.0 g/l). After deposition of the silver-containing contact areas The copper-ceramic substrate was carefully rinsed with water to remove any remaining residue. The first masking was then removed in a stripping system with a 2.5% sodium hydroxide solution.

A photosensitive film was then applied to both copper layers of the copper-ceramic substrate, each with silver-containing contact areas, using a hot roll laminator. The photosensitive film was exposed to 30 mJ/cm ² at each of the areas to be masked in order to harden the polymer contained in the photosensitive film and to obtain the second masking. The unexposed areas of the photosensitive film were then removed wet-chemically using a sodium carbonate solution (concentration = 10 g/l). After applying the second masking, the copper-ceramic substrate was again cleaned by rinsing. The unmasked areas of the copper layers of the copper-ceramic substrate provided with silver-containing contact areas were then wet-chemically etched. For this purpose, the copper-ceramic substrate was sprayed in an etching system with a hydrochloric acid copper chloride solution (copper ion content = 160 g/l) containing hydrogen peroxide. The etching was carried out at a temperature of 50 ° C and at a spray pressure of 2.8 bar. The etching removed material from the unmasked areas of the copper layer of the copper-ceramic substrate. The metal-ceramic substrates were then rinsed. Unmasked areas of the connecting layer contained in the metal-ceramic substrate were then also wet-chemically etched. For this purpose, the metal-ceramic substrate was again sprayed in an etching system with an etching solution that contained ammonium fluoride, fluoroboric acid and hydrogen peroxide. The copper-ceramic substrate was then rinsed and dried. The second masking was then removed in a stripping system with a 2.5% sodium hydroxide solution.

The resulting copper-ceramic substrate was laser-cut into individual parts with the dimensions (20.5 x 17.0 mm) and could then be used for further investigations and the production of an electronic component.

Comparison example:

The comparative example was carried out like the example, with the order of steps: (i) depositing a silver-containing layer on the unmasked areas of the Copper layer was reversed to obtain a contact area comprising silver and (ii) etching of unmasked areas of the copper layer to obtain a structuring.

For the comparison ice example, an analogous metal-ceramic substrate was used as in the example, in which a ceramic body made of a silicon nitride ceramic with dimensions of 177.8 x 139 x 0.32 mm on both sides with a copper layer with dimensions of 170 x 132 x 0.3 mm via an AMB (Active Metal Brazing) process. This copper-ceramic substrate was first cleaned after production.

A photosensitive film was then applied to both copper layers of the copper-ceramic substrate using a hot roll laminator. The photosensitive film was exposed to 30 mJ/cm ² at each of the areas to be masked in order to harden the polymer contained in the photosensitive film and to obtain the first masking. The unexposed areas of the photosensitive film were then removed wet-chemically using a sodium carbonate solution (concentration = 10 g/l). After applying the first mask, the copper-ceramic substrate was cleaned by rinsing. The unmasked areas of the copper layers of the copper-ceramic substrate were then wet-chemically etched. For this purpose, the copper-ceramic substrate was sprayed in an etching system with a hydrochloric acid copper chloride solution (copper ion content = 160 g/l) containing hydrogen peroxide. The etching was carried out at a temperature of 50 ° C and at a spray pressure of 2.8 bar. The etching removed material from the unmasked areas of the copper layers of the copper-ceramic substrate. The metal-ceramic substrates were then rinsed. Unmasked areas of the connecting layer contained in the metal-ceramic substrate were then also wet-chemically etched. For this purpose, the metal-ceramic substrate was again sprayed in an etching system with an etching solution containing ammonium fluoride, fluoroboric acid and hydrogen peroxide. The copper-ceramic substrate was then rinsed and dried. The first masking was then removed in a stripping system with a 2.5% sodium hydroxide solution.

A photosensitive film was then applied to both etched surfaces of the copper-ceramic substrate using a hot roll laminator. The photosensitive film was exposed to 30 mJ/cm ² at each of the areas to be masked in order to harden the polymer contained in the photosensitive film and to obtain the second masking. The unexposed areas of the photosensitive film were then removed wet-chemically using a sodium carbonate solution (concentration = 10 g/l). After applying the second After masking, the copper-ceramic substrate was again cleaned by rinsing. Silver-containing contact areas were then deposited on the unmasked areas of the copper layers of the copper-ceramic substrate. For this purpose, the copper-ceramic substrate provided with the second mask was first pretreated with a first solution containing hydrogen peroxide and sulfuric acid and then contacted with a nitric acid silver nitrate solution (silver content = 1.0 g/l). After the silver-containing contact areas were deposited, the copper-ceramic substrate was carefully rinsed with water to remove any remaining residues. The second masking was then removed in a stripping system with a 2.5% sodium hydroxide solution.

Evaluation:

The ratio A (BCD _SO iid) / A (BCD _to tai) was determined for the metal-ceramic substrates obtained in the example and the comparative example. For this purpose, as described herein, the metal-ceramic substrates were cut perpendicular to the main extension plane of the respective ceramic bodies and photographs of the cross sections thus obtained were taken using a light microscope. Points A, B, C and D were determined in the cross sections. The ratio A (BCDsoiid) / A (BCDtotai) was then determined for each of the metal-ceramic substrates. For this purpose, ten different cross sections of structuring areas in the metal layer of the respective metal-ceramic substrate were examined, the ratio A (BCDsoiid) / A (BCDtotai) for each of these cross sections was determined, and the mean value of the ratios A (BCDsoiid) / A ( BCDtotai) for each of these cross sections was formed to arrive at the ratio A (BCDsoiid) / A (BCDtotai) for the respective metal-ceramic substrate. Furthermore, the standard deviation SSD was determined.

Figure 3 shows an example of an optical micrograph of the cross section of a structuring area of a metal-ceramic substrate according to the example, while Figure 4 shows an example of an optical microscope image of the cross section of a structuring area of a metal-ceramic substrate according to the comparative example. The results are shown in Table 1.

Table 1 :

The metal-ceramic substrates were examined for their resistance to temperature changes.

For this purpose, temperature change resistance tests were carried out.

Temperature change resistance test:

In preparation for the thermal shock resistance test, ultrasound microscopy (PVA Tepla SAM300) was first used to check whether the metal-ceramic substrates were in perfect condition. Only metal-ceramic substrates that showed no delamination between the ceramic body and the metal layer or other deformations that could lead to delamination of the metal layer from the ceramic body (e.g. cracks) were used for the test. To test the resistance to thermal shock, the metal-ceramic substrates were repeatedly exposed to a cold liquid (temperature -65 ° C, Galden Do2TS) and a hot liquid (temperature +150 ° C, Galden Do2TS) in a cycling chamber ( ESPEC TSB-21 51) exposed. The metal-ceramic substrates were checked again every 1000 cycles for delamination and other deformations using ultrasound microscopy (PVA Tepla SAM300). The test was ended after 3000 cycles. The metal-ceramic substrates were then checked for delamination and other deformations using ultrasound microscopy (PVA Tepla SAM300). The condition of the respective metal-ceramic substrates after carrying out the thermal shock resistance test was compared with the condition of the metal-ceramic substrates before carrying out the thermal shock resistance test in terms of delamination and other deformations. Delaminations and other deformations (e.g. cracks) were visible as white discolorations in the ultrasound image.

The results are shown in Table 2. Table 2:

The results show that the metal-ceramic substrate according to the invention is significantly superior to the metal-ceramic substrate of the comparative example in terms of thermal shock resistance.

List of reference symbols:

1 metal-ceramic substrate

2 Main extension level 4 Structuring area

8 contact area

10 ceramic bodies

15 main boundary area

20 metal layer 22 recess

24 metal main surface

40 contour line

50 Solid Material

200 More metal layer

Claims

EXPECTATIONS

1. Metal-ceramic substrate comprising a) a ceramic body which has a main extension plane, b) a metal layer which is connected flatly to the ceramic body, the metal layer having a structuring area which

(i) solid material in areas and

A (BCDsoiid) / A (BCDtotai) > 70%, where

2. the contour line is determined that separates the solid material from the non-solid material;

3. Point A is determined on a perpendicular to the equilibrium line at a distance of 150 pm from the equilibrium line, at which the perpendicular to the equilibrium line intersects the contour line;

2. Metal-ceramic substrate according to claim 1, characterized in that the ceramic of the ceramic body is selected from the group consisting of aluminum nitride ceramics, silicon nitride ceramics and aluminum oxide ceramics.

3. Metal-ceramic substrate according to claim 1 or claim 2, characterized in that the metal layer comprises copper.

4. Metal-ceramic substrate according to one of the preceding claims, characterized in that the solid material contains metal of the metal layer.

5. Metal-ceramic substrate according to one of the preceding claims, characterized in that the non-solid material contains gaseous material.

6. Metal-ceramic substrate according to one of the preceding claims, characterized in that the following requirement is met:

A (BCDsoiid) / A (BCDtotai) > 95%.

7. Metal-ceramic substrate according to one of the preceding claims, characterized in that the sample standard deviation SSD of the ratio A (BCDsoiid) / A (BCDtotai) over at least ten different cross sections of the structuring area of the metal layer is not more than 10%.

8. Electronic component comprising a metal-ceramic substrate according to one of the preceding claims.