WO2024016540A1 - Chip system - Google Patents

Chip system Download PDF

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Publication number
WO2024016540A1
WO2024016540A1 PCT/CN2022/133276 CN2022133276W WO2024016540A1 WO 2024016540 A1 WO2024016540 A1 WO 2024016540A1 CN 2022133276 W CN2022133276 W CN 2022133276W WO 2024016540 A1 WO2024016540 A1 WO 2024016540A1
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WIPO (PCT)
Prior art keywords
chip
functional
chips
substrate
functional chip
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PCT/CN2022/133276
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French (fr)
Chinese (zh)
Inventor
田应超
刘天建
曹瑞霞
王逸群
谢冬
Original Assignee
湖北三维半导体集成创新中心有限责任公司
湖北江城实验室
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Publication of WO2024016540A1 publication Critical patent/WO2024016540A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06506Wire or wire-like electrical connections between devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06513Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06555Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06568Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices decreasing in size, e.g. pyramidical stack

Definitions

  • the present disclosure relates to the field of semiconductor technology, and is related to but not limited to a chip system.
  • a chip system including:
  • a plurality of first functional chips arranged in an array on the first substrate;
  • the first functional chip and the second functional chip have different types of functions; the projection of each second functional chip on the first substrate is respectively different from that of at least two first functional chips.
  • the projections on the first substrate at least partially overlap; the second functional chip and at least two of the first functional chips are bonded and connected in the overlapping area;
  • connection channels between the first functional chip and the second functional chip that are bonded together; the multiple connection channels are configured to connect the second functional chip with at least two of the first functional chips. There is signal communication between chips.
  • any four adjacent first functional chips are connected to the same second functional chip.
  • the first functional chip includes a functional module
  • the second functional chip includes at least one core module and a plurality of interconnection modules; the interconnection module is located in an area of the second functional chip that overlaps the first functional chip, and the core module is located in the first functional chip. The area in the dual-function chip other than the interconnection module.
  • the functional module includes a processor; the core module includes a memory, and the interconnect module includes a memory controller.
  • the functional module includes a programmable logic unit; the core module includes a switch unit, and the interconnection module includes a connection unit.
  • the second functional chip is connected to the first substrate through a first interconnection structure in the area where the gap is located.
  • the chip system further includes:
  • a plurality of third functional chips located on the second functional chip and arranged in an array
  • the third functional chip and the second functional chip have different types of functions; the projection of each second functional chip on the first substrate is respectively different from that of at least two third functional chips.
  • the projections on the first substrate at least partially overlap; the second functional chip and at least two third functional chips are bonded and connected in the overlapping area;
  • connection channels between the bonded third functional chip and the second functional chip; the multiple connection channels are configured to connect the second functional chip with at least two of the third functional chips. There is signal communication between chips.
  • the projection of the third functional chip on the first substrate overlaps with the projection of the first functional chip on the first substrate
  • the chip system further includes:
  • a plurality of third functional chips located on the second functional chip and arranged in an array
  • the third functional chip and the second functional chip have different types of functions; the projection of each third functional chip on the first substrate is respectively different from that of at least two second functional chips.
  • the projections on the first substrate at least partially overlap; the third functional chip and at least two second functional chips are bonded and connected in the overlapping area;
  • connection channels between the bonded third functional chip and the second functional chip; the multiple connection channels are configured to connect the third functional chip with at least two of the second functional chips. There is signal communication between chips.
  • the chip system further includes:
  • Any one of the input and output chips is connected to at least one of the first functional chip or the second functional chip.
  • the input/output chip is located at the edge of the first substrate; among the plurality of first functional chips arranged in the array, the first functional chip close to the edge of the first substrate is different from the input/output chip.
  • the chips are connected through the first substrate.
  • the input/output chip is located in the gap between any two adjacent first functional chips, and the input/output chip is located within the coverage of the second functional chip;
  • the input-output chip is bonded and connected to the second functional chip, and the input-output chip is also bonded and connected to the first substrate.
  • the input-output chip is located adjacent to the second functional chip on the first functional chip
  • the projection of the input/output chip on the first substrate overlaps with two adjacent first functional chips respectively, and the input/output chip and the first functional chip are bonded and connected in the overlapping area. .
  • the chip system further includes:
  • the second substrate is bonded and connected to the input/output chip, and there is an input/output channel between the input/output chip and the second substrate;
  • the second substrate has a rewiring layer; the rewiring layer has a signal channel connecting the input and output chip and the surface of the second substrate.
  • the chip system further includes:
  • the heat dissipation structure is in contact with the surface of the first functional chip in an area covering the surface of the first functional chip; the heat dissipation structure covers an area of the surface of the second functional chip and the surface of the second functional chip. Contact; the heat dissipation structure is in contact with the first substrate in a region covering the exposed first substrate between the first functional chips.
  • the heat dissipation structure includes a plurality of protruding structures
  • the protruding structure located in the area covering the first functional chip extends toward the surface of the first functional chip and contacts the first functional chip;
  • the protruding structure located in the area covering the exposed first substrate between the first functional chips extends toward the first substrate and contacts the first substrate.
  • Figure 1 is a schematic diagram of a chip system provided by an embodiment of the present disclosure
  • Figure 2 is a top view of a chip system provided by an embodiment of the present disclosure
  • Figure 3 is a top view of another chip system provided by an embodiment of the present disclosure.
  • Figure 4 is a schematic diagram of a first interconnection structure in a chip system provided by an embodiment of the present disclosure
  • Figure 5 is a schematic diagram of a third functional chip in a chip system provided by an embodiment of the present disclosure.
  • Figure 6 is a schematic diagram of a third functional chip in another chip system provided by an embodiment of the present disclosure.
  • Figure 7 is a top view of an input and output chip in a chip system provided by an embodiment of the present disclosure.
  • Figure 8 is a cross-sectional view of an input and output chip in a chip system provided by an embodiment of the present disclosure
  • Figure 9 is a top view of an input and output chip in another chip system provided by an embodiment of the present disclosure.
  • Figure 10 is a cross-sectional view of an input and output chip in another chip system provided by an embodiment of the present disclosure.
  • Figure 11 is a top view of an input and output chip in yet another chip system provided by an embodiment of the present disclosure.
  • Figure 12 is a cross-sectional view of an input and output chip in yet another chip system provided by an embodiment of the present disclosure
  • Figure 13 is a schematic diagram of a second substrate in a chip system provided by an embodiment of the present disclosure.
  • Figure 14 is a top view of a heat dissipation structure in a chip system provided by an embodiment of the present disclosure
  • Figure 15 is a cross-sectional view of a heat dissipation structure in a chip system provided by an embodiment of the present disclosure
  • Figure 16 is a cross-sectional view of the heat dissipation structure in another direction in a chip system provided by an embodiment of the present disclosure
  • Figure 17 is a schematic diagram of another chip system provided by an embodiment of the present disclosure.
  • terms can be understood, at least in part, from context of use.
  • the term "one or more” as used herein may be used in the singular to describe any feature, structure or characteristic, or may be used in the plural to describe a combination of features, structures or characteristics.
  • terms such as “a” or “the” may equally be understood to convey a singular usage or to convey a plural usage, depending at least in part on the context.
  • the term “based on” may be understood as not necessarily intended to convey an exclusive set of factors, and may instead allow for the presence of additional factors that are not necessarily explicitly described, again depending at least in part on context.
  • an embodiment of the present disclosure provides a chip system 10, including:
  • a plurality of second functional chips 102 located on the surface of the first functional chip 101;
  • the first functional chip 101 and the second functional chip 102 have different types of functions; the projection of each second functional chip 102 on the first substrate 100 is different from at least two of the second functional chips 102 .
  • the projection of a functional chip 101 on the first substrate 100 at least partially overlaps; the second functional chip 102 and at least two first functional chips 101 are bonded and connected in the overlapping area;
  • connection channel 110 between the bonded first functional chip 101 and the second functional chip 102; the multi-way connection channel 110 is configured to connect the second functional chip 102 with at least two There is signal communication between the first functional chips 101 .
  • a multi-chip two-dimensional network system can be constructed through wafer reorganization before packaging.
  • the multi-chip interconnection structure is distributed in the organic rewiring layer located at the bottom of the restructured wafer. Density and velocity are lower.
  • the first substrate 100 includes but is not limited to an organic substrate, a ceramic substrate, a silicon substrate, a heat dissipation substrate, and the like.
  • the first substrate 100 can be used to carry multiple chips in the chip system 10, enhance the heat dissipation capability of the chip system 10, and electrically lead out the multiple chips.
  • a plurality of first functional chips 101 arranged in an array are located on the first substrate 100. There may be a gap between each two first functional chips 101, and the plurality of first functional chips 101 may not be directly interconnected.
  • the first functional chip 101 may be a die, and the multiple first functional chips 101 may also be multiple uncut die located on the same wafer. In some embodiments, the first functional chip 101 may It is a known good die (KGD) to improve the reliability of the chip system 10 .
  • the type of the first function chip 101 includes but is not limited to the programmable logic function block (Configurable Logic Block, CLB) in the field programmable gate array (Field Programmable Gate Array, FPGA), the graphics processor (Graphics Processing Unit, GPU) Streaming Multiprocessor (SM), etc.
  • CLB programmable logic function block
  • FPGA Field Programmable Gate Array
  • GPU Graphics Processing Unit
  • SM Streaming Multiprocessor
  • the plurality of second functional chips 102 are located on the surface of the plurality of first functional chips 101 away from the first substrate 100 .
  • Each second functional chip 102 has an overlapping area with at least two first functional chips 101 in a direction perpendicular to the surface of the first substrate 100 .
  • Each second functional chip 102 is bonded and connected with at least two first functional chips 101 below it in the overlapping area, and there are multiple connection channels 110 between the bonded-connected first functional chips 101 and the second functional chips 102 . Bidirectional signal communication can be achieved between the second functional chip 102 and the first functional chip 101 through the multi-channel connection channel 110 .
  • the type of the second function chip 102 includes but is not limited to the Connect Block (CB) and Switch Block (SB) in the FPGA, the video memory chip (Memory) and the video memory controller (Memory Controller) in the GPU. wait.
  • the second functional chip 102 can be bonded to at least two first functional chips 101 in the overlapping area through a hybrid bonding process, and a multi-way connection channel 110 can be formed.
  • the hybrid bonding process can make the multiple connection channels 110 have good transmission stability and signal integrity, and the pitch of the multiple connection channels 110 is small, and the number of multiple connection channels 110 per unit area is large. The distance between chips is short, thereby increasing the integration level of the chip system 10 while increasing the speed and bandwidth of signal transmission.
  • the second functional chip 102 can also play the role of an interposer. Therefore, two adjacent first functional chips 101 can communicate through the second functional chip 102.
  • the chip system 10 can be based on a plurality of second function chips 102 to form a mesh interconnection structure. Since the types of multiple chips in the chip system 10 can be the same or different, the chip system 10 has good functional scalability, and the failure of any one chip will not affect the entire chip system 10, and the fault tolerance rate is high.
  • the first functional chip 101 can also be connected to the second functional chip 102 through other means, such as leads, micro-bumps, etc.
  • the first functional chip 101 can also be connected to the first substrate 100 through hybrid bonding, wires, micro-bumps, etc., and form multiple connection channels between the first functional chip 101 and the first substrate 100 110.
  • the first functional chip 101 and the second functional chip 102 may have different types of functions.
  • one of the first functional chip 101 and the second functional chip 102 may be used for logical operation processing, while the other may be used for logical operation processing. Used in routing and switching, sensing and identifying external signals and/or data storage, etc.
  • the second functional chip 102 may have active devices for signal amplification, conversion, calculation, etc.
  • the combination of the first functional chip 101 and the second functional chip 102 may also include a logic chip and a memory chip, a logic chip and an image chip, a logic chip, a memory chip and an image chip, etc.
  • the memory chips here include but Not limited to static random access memory (Static Random Access Memory, SRAM) and dynamic random access memory (Dynamic Random Access Memory, DRAM), etc.
  • any four adjacent first functional chips 101 are connected to the same second functional chip 102 .
  • each first functional chip 101 can input and output signals with another adjacent first functional chip 101 through the second functional chip 102; and multiple third functional chips that are spaced apart from each other.
  • One functional chip 101 can communicate through multiple second functional chips 102, that is, the entire chip system 10 has a mesh interconnection structure. Therefore, the chip system 10 has good functional scalability, and the failure of any one chip will not affect the entire chip system 10, and the fault tolerance rate is high.
  • the first functional chip 101 includes a functional module 1011;
  • the second functional chip 102 includes at least one core module 1021 and a plurality of interconnection modules 1022; the interconnection modules 1022 are located in an area of the second functional chip 102 that overlaps with the first functional chip 101.
  • the core module 1021 is located in an area of the second functional chip 102 other than the interconnection module 1022 .
  • the first functional chip 101 has functional modules 1011 that implement specific functions.
  • the functional modules 1011 in multiple first functional chips 101 may be the same or different.
  • the functional module 1011 can be used as a controller to control other chips in the chip system 10 to perform their respective tasks; the functional module 1011 can also be used for logical operations, such as floating point calculations, integer calculations, etc.
  • the second functional chip 102 includes at least one core module 1021 and a plurality of interconnection modules 1022.
  • the core module 1021 may be located in the central area of the second functional chip 102; the interconnection module 1022 may be located around the core module 1021, such as the area in the second functional chip 102 that overlaps the first functional chip 101.
  • the core module 1021 and the interconnection module 1022 can implement their respective functions according to instructions issued by the first functional chip 101, such as data storage, signal sensing, routing and switching, etc. It can be understood that the multi-channel connection channel may be located in the area where the interconnection module 1022 is located, that is, the second functional chip 102 implements communication with other chips through the interconnection module 1022.
  • the functional module 1011 includes a processor; the core module 1021 includes a memory, and the interconnection module 1022 includes a storage controller.
  • the functional module 1011 in the first functional chip 101 can be a processor, such as an SM, a digital signal processor (Digital Signal Processor, DSP), a microcontroller unit (Microcontroller Unit, MCU), a microprocessor Unit (Micro Processor Unit, MPU), etc.
  • the core module 1021 in the second functional chip 102 can be a memory, such as DRAM, SRAM, magnetic random access memory (Magnetoresistive Random Access Memory, MRAM), etc.; and the interconnection module 1022 in the second functional chip 102 can be a memory controller. , used to operate the memory according to instructions issued by the processor. In this way, the chip system 10 can have a higher integration level and achieve better functional scalability.
  • the functional module 1011 includes a programmable logic unit; the core module 1021 includes a switch unit, and the interconnection module 1022 includes a connection unit.
  • the functional module 1011 in the first functional chip 101 can be a programmable logic unit, which has the advantages of flexible configuration and simple programming method;
  • the core module 1021 in the second functional chip 102 can be a switch unit, It is used to realize switching of wiring directions and switching between different wiring types;
  • the interconnection module 1022 in the second functional chip 102 can be a connection unit, used to provide rich wiring resources and increase the flexibility of wiring. In this way, the chip system 10 has greater design flexibility and better versatility.
  • the second functional chip 102 is connected to the first substrate 100 through the first interconnection structure 111 in the area where the gap is located.
  • the first interconnection structure 111 may be a conductive material such as metal or doped semiconductor, and the length of the first interconnection structure 111 may be greater than or equal to the thickness of the first functional chip 101 .
  • the first interconnection structure 111 may be a through mold via (TMV), a through dielectric via (Through Dielectric Via, TDV), a lead, etc.
  • TMV through mold via
  • TDV Through Dielectric Via
  • TDV through dielectric via
  • the first interconnection structure 111 may be perpendicular to the surface of the first substrate 100, or may be a non-vertical structure such as curved or inclined. It can be understood that the shorter the length of the first interconnection structure 111, the faster the signal transmission speed.
  • the gaps between adjacent first functional chips 101 are also filled with insulating material to isolate the plurality of first interconnect structures 111 in the gaps.
  • the insulating material here can be dielectric organic polymers, such as epoxy resin, etc.
  • the chip system 10 further includes:
  • a plurality of third functional chips 103 located on the second functional chip 102 and arranged in an array;
  • the third functional chip 103 and the second functional chip 102 have different types of functions; the projection of each second functional chip 102 on the first substrate 100 is different from at least two of the third functional chips 102 .
  • the projection of the three-function chip 103 on the first substrate 100 at least partially overlaps; the second functional chip 102 and at least two third functional chips 103 are bonded and connected in the overlapping area;
  • connection channel 110 between the bonded third functional chip 103 and the second functional chip 102; the multi-way connection channel 110 is configured to connect the second functional chip 102 with at least two There is signal communication between the third functional chips 103 .
  • the third functional chip 103 may be a bare chip. In some embodiments, the third functional chip 103 may be a known good chip to improve the reliability of the chip system 10 .
  • the types of the third functional chip 103 include but are not limited to CLB in FPGA, SM in GPU, etc.
  • the second functional chip 102 can be bonded to at least two third functional chips 103 in the overlapping area through a hybrid bonding process, and a multi-way connection channel 110 can be formed.
  • the multiple connection channels 110 formed by hybrid bonding can improve the integration level of the chip system 10 and increase the speed and bandwidth of signal transmission.
  • third functional chips 103 can communicate through the second functional chip 102, and the third functional chip 103 can also communicate with the first functional chip 101 through the second functional chip 102.
  • the chip system 10 has good functional scalability, and the failure of any one chip will not affect the entire chip system 10, and the fault tolerance rate is high.
  • the third functional chip 103 can also be connected to the second functional chip 102 through other means, such as leads, micro-bumps, etc.
  • the third functional chip 103 and the second functional chip 102 may have different types of functions.
  • one of the third functional chip 103 and the second functional chip 102 may be used for logical operation processing, while the other may be used for logical operation processing. Used in routing and switching, sensing and identifying external signals and/or data storage, etc.
  • the projection of the third functional chip 103 on the first substrate 100 overlaps with the projection of the first functional chip 101 on the first substrate 100;
  • the projections of the third functional chip 103 and the first functional chip 101 overlap. In this way, the area occupied by the chip system 10 in the horizontal direction can be saved.
  • the second interconnection structure 112 may be located in a portion of the projection area of the third functional chip 103 and the first functional chip 101 except for the second functional chip 102 .
  • the second interconnection structure 112 may be made of conductive material such as metal or doped semiconductor, and the length of the second interconnection structure 112 may be greater than or equal to the thickness of the second functional chip 102 .
  • the second interconnection structure 112 may be a TMV, a TDV, a lead, or the like.
  • the second interconnection structure 112 may be perpendicular to the surface of the first substrate 100, or may be a non-vertical structure such as curved or inclined. It can be understood that the shorter the length of the second interconnection structure 112, the faster the signal transmission speed.
  • insulating material is also filled between the third functional chip 103 and the first functional chip 101 to isolate the plurality of second interconnect structures 112 .
  • the insulating material here can be dielectric organic polymers, such as epoxy resin, etc.
  • the stacking and connection method of the first functional chip 101 , the second functional chip 102 and the third functional chip 103 can also be repeated in the vertical direction, so that the chip system 10 has more chip layers, further improving the Integration and scalability of the chip system 10.
  • the chip system 10 further includes:
  • a plurality of third functional chips 103 located on the second functional chip 102 and arranged in an array;
  • the third functional chip 103 and the second functional chip 102 have different types of functions; the projection of each third functional chip 103 on the first substrate 100 is different from that of at least two of the third functional chips 103 and 102 respectively.
  • the projections of the two functional chips 102 on the first substrate 100 at least partially overlap; the third functional chip 103 and at least two second functional chips 102 are bonded and connected in the overlapping area;
  • connection channel 110 between the bonded third functional chip 103 and the second functional chip 102; the multi-channel connection channel 110 is configured to connect the third functional chip 103 with at least two There is signal communication between the second functional chips 102 .
  • the third functional chip 103 is stacked on at least two second functional chips 102, and the second functional chip 102 is stacked on at least two first functional chips 101, the number of chips is gradually increased from bottom to top.
  • the chip system 10 with reduced layers has better structural stability, stronger functional scalability and higher fault tolerance rate.
  • the third functional chip 103 may be a bare chip. In some embodiments, the third functional chip 103 may be a known good chip to improve the reliability of the chip system 10 .
  • the types of the third functional chip 103 include but are not limited to CLB in FPGA, SM in GPU, etc.
  • the third functional chip 103 can be bonded to at least two second functional chips 102 in the overlapping area through a hybrid bonding process, and a multi-way connection channel 110 can be formed.
  • the multiple connection channels 110 formed by hybrid bonding can improve the integration level of the chip system 10 and increase the speed and bandwidth of signal transmission.
  • the chip system 10 further includes:
  • Any one of the input and output chips 104 is connected to at least one of the first functional chip 101 or the second functional chip 102 .
  • the chip system 10 may also have multiple input and output chips 104.
  • the input and output chips 104 are used to electrically connect the multiple chips in the chip system 10 to other external systems, where any input and output
  • the chip 104 is connected to at least one first functional chip 101 or a second functional chip 102 .
  • the input/output chip 104 can be an input/output function block in an FPGA, an input/output interface in a GPU, and other peripheral circuits.
  • the input/output chip 104 can connect multiple chips in the chip system 10 and the first substrate 100 through hybrid bonding, wires, micro-bumps, etc., to realize communication interaction between the chip system 10 and external systems.
  • the input/output chip 104 is located at the edge of the first substrate 100; among the plurality of first functional chips 101 arranged in the array, it is close to the first substrate 100 The first functional chip 101 on the edge and the input/output chip 104 are connected through the first substrate 100 .
  • a plurality of input and output chips 104 are located at the edge of the first substrate 100 , and the plurality of input and output chips 104 can be arranged around a plurality of first functional chips 101 arranged in an array.
  • FIG. 8 which is a schematic diagram of the AA cross-section in FIG. 7
  • the input/output chip 104 can be connected to the first functional chip 101 near the edge of the first substrate 100 through wiring in the first substrate 100 . It can be understood that arranging the input/output chip 104 at the edge of the first substrate 100 is beneficial to simplifying the layout structure of the chip system 10 and the manufacturing process is relatively simple.
  • the input-output chip 104 is located in the gap between any two adjacent first functional chips 101 , and the input-output chip 104 is located in the gap between any two adjacent first functional chips 101 .
  • the second functional chip 102 Within the coverage of the second functional chip 102;
  • the input/output chip 104 is bonded and connected to the second functional chip 102 , and the input/output chip 104 is also bonded and connected to the first substrate 100 .
  • FIG. 9 there is also an input/output chip 104 in the gap between any two adjacent first functional chips 101. In the direction perpendicular to the surface of the first substrate 100, the input/output chip 104 is provided. The chip 104 can also be within the coverage of the second functional chip 102, so that the input and output chips 104 do not occupy additional area in the chip system 10 to improve integration.
  • FIG. 10 which is a schematic diagram of the AA cross-section in FIG. 9 , the upper surface of the input/output chip 104 can be bonded to the second functional chip 102 , and the lower surface of the input/output chip 104 can be bonded to the first substrate 100 .
  • connection method between the input and output chip 104, the second functional chip 102 and the first substrate 100 includes but is not limited to hybrid bonding, wires, micro-bumps, etc.
  • the input and output chips 104 may also exceed the coverage of the second functional chip 102.
  • the input-output chip 104 is located adjacent to the second functional chip 102 on the first functional chip 101;
  • the input/output chip 104 and the second functional chip 102 are located in the same layer, and the input/output chip 104 is located adjacent to any second functional chip 102.
  • the input-output chip 104 may be located between two adjacent second function chips 102 .
  • the input-output chip 104 can also span the two first functional chips 101 located below it, that is, the projection of the input-output chip 104 on the first substrate 100 overlaps with the two adjacent first functional chips 101 respectively, and the input-output chip 104 overlaps with the two adjacent first functional chips 101 respectively.
  • the chip 104 and the first functional chip 101 are bonded and connected in an overlapping area.
  • the input/output chip 104 does not occupy additional area in the chip system 10; on the other hand, the input/output chip 104 can also play the role of an intermediary layer to increase the space between two adjacent first functional chips 101.
  • the signal transmission bandwidth ensures that the signal transmission between two adjacent first functional chips 101 is not affected when the second functional chip 102 fails, thereby improving the fault tolerance rate of the chip system 10 .
  • the connection method between the input and output chip 104 and the first functional chip 101 includes but is not limited to hybrid bonding, wires, micro-bumps, etc.
  • the input and output chips 104 can also be connected through the third interconnection structure 113 located in the gap between the two adjacent first functional chips 101 below it. to the first substrate 100 .
  • the third interconnection structure 113 may be made of conductive material such as metal or doped semiconductor, and the length of the third interconnection structure 113 may be greater than or equal to the thickness of the first functional chip 101 .
  • the third interconnection structure 113 may be a TMV, a TDV, a lead, or the like.
  • the third interconnection structure 113 may be perpendicular to the surface of the first substrate 100, or may be a non-vertical structure such as curved or inclined. It can be understood that the shorter the length of the third interconnection structure 113, the faster the signal transmission speed.
  • the first functional chip 101 may also have an input/output function and a switching function, and the first functional chip 101 may pass through the first substrate 100 through a through silicon via (TSV), Interconnect structures such as TMV lead multiple chips in the chip system 10 from the back of the first substrate 100 to communicate with external systems.
  • TMV through silicon via
  • Interconnect structures such as TMV lead multiple chips in the chip system 10 from the back of the first substrate 100 to communicate with external systems.
  • the back side of the first substrate 100 here refers to the surface of the first substrate 100 away from the first functional chip 101 .
  • the chip system 10 further includes:
  • the second substrate 200 covers the second functional chip 102 and the input/output chip 104;
  • the second substrate 200 is bonded and connected to the input/output chip 104, and there is an input/output channel 114 between the input/output chip 104 and the second substrate 200;
  • the second substrate 200 has a redistribution layer (RDL) 201; the redistribution layer 201 has a signal channel 210 connecting the input/output chip 104 and the surface of the second substrate 200.
  • RDL redistribution layer
  • the second substrate 200 covers the second functional chip 102 and the input/output chip 104 , and the second substrate 200 can be bonded and connected to the input/output chip 104 and formed with Input and output channel 114.
  • the second substrate 200 is located below the second functional chip 102 and the input/output chip 104 in FIG. 13 .
  • the input and output channels 114 include, but are not limited to, hybrid bonding, wires, micro-bumps, etc.
  • the second substrate 200 may have a rewiring layer 201 .
  • the rewiring layer 201 may increase the layout flexibility of pins, bumps and other structures in the chip system 10 to simplify circuit design.
  • the redistribution layer 201 has a signal channel 210 that connects the input/output chip 104 and the surface on the side of the second substrate 200 away from the first substrate 100.
  • the signal channel 210 here may be a metal line formed by a deposition process.
  • the signal channel 210 may connect the input and output channel 114 to a ball grid array (Ball Grid Array, BGA) on the other side surface of the second substrate 200 .
  • BGA Ball Grid Array
  • the chip system 10 further includes:
  • the heat dissipation structure 300 covers the first functional chip 101 and the second functional chip 102;
  • the heat dissipation structure 300 is in contact with the surface of the first functional chip 101 in an area covering the surface of the first functional chip 101; the heat dissipation structure 300 is in contact with the surface of the second functional chip 102 in an area covering the surface of the second functional chip 102.
  • the second functional chips 102 are in surface contact; the heat dissipation structure 300 covers the exposed area of the first substrate 100 between the first functional chips 101 and is in contact with the first substrate 100 .
  • FIG. 14 is a top view of the chip system 10 with the heat dissipation structure 300
  • FIG. 15 and FIG. 16 are schematic diagrams of the AA cross-section and the BB cross-section in FIG. 14, respectively.
  • the heat dissipation structure 300 covers the first functional chip 101 and the second functional chip 102 .
  • the heat dissipation structure 300 can be made of copper, aluminum nitride, diamond composite materials, or other materials with higher thermal conductivity and lower thermal expansion coefficient.
  • the heat dissipation structure 300 is in contact with the surfaces of the first functional chip 101 and the second functional chip 102 respectively, and the heat dissipation structure 300 can also be in contact with the first substrate 100 through the gaps between the plurality of first functional chips 101 to improve the chip system 10 heat dissipation efficiency.
  • the heat dissipation structure 300 may be a heat sink.
  • the heat dissipation structure 300 includes a plurality of protruding structures 310;
  • the protruding structure 310 located in the area covering the first functional chip 101 extends toward the surface of the first functional chip 101 and contacts the first functional chip 101;
  • the protruding structure 310 located in the area covering the exposed first substrate 100 between the first functional chips 101 extends toward the first substrate 100 and contacts the first substrate 100 .
  • the heat dissipation structure 300 includes a plurality of protruding structures 310, and the protruding structures 310 include but are not limited to comb-shaped or lattice-shaped.
  • the protruding structure 310 located in the area covering the first functional chip 101 and not covering the second functional chip 102 can extend downward and contact the surface of the first functional chip 101; as shown in Figure 16, located in the area that does not cover the second functional chip 102
  • the protruding structures 310 above the gaps between the plurality of first functional chips 101 may extend downward and contact the surface of the first substrate 100 . In this way, the heat dissipation structure 300 can be in contact with various chips and substrates in the chip system 10 to improve heat dissipation efficiency.
  • an embodiment of the present disclosure also provides a chip system 40, including:
  • a plurality of input and output chips 404 located at the edge of the first substrate 400;
  • each second functional chip 402 on the first substrate 400 at least partially overlaps with the projection of at least two first functional chips 401 on the first substrate 400;
  • the two-function chip 402 and at least two first functional chips 401 are bonded and connected in an overlapping area; there are multiple connection channels between the bonded-connected first functional chip 401 and the second functional chip 402 ;
  • the second functional chip 402 also includes a core module 4021 and an interconnection module 4022; wherein the interconnection module 4022 is located in the area of the second functional chip 402 that overlaps with the projection of the first functional chip 401; the core module 4021 is located in the second functional chip 402. The central area of chip 402 excluding interconnect module 4022;
  • the first functional chip 401 close to the edge of the first substrate 400 is connected to the input/output chip 404 through the first substrate 400 .
  • the chip system 40 may be a network on chip (NOC) or other architecture suitable for parallel computing.
  • NOC network on chip
  • the second functional chip 402 can be bonded to at least two first functional chips 401 in the overlapping area through a hybrid bonding process, and multiple connection channels can be formed.
  • the multiple connection channels formed by the hybrid bonding process have good transmission stability and signal integrity, and the spacing between the multiple connection channels is small.
  • the number of multiple connection channels per unit area is large, and the distance between the chips is Shorter, thereby increasing the integration level of the chip system 40 while increasing the speed and bandwidth of signal transmission.
  • the second functional chip 402 can also function as an intermediary layer, allowing the chip system 40 to form a mesh-like interconnection structure and have good fault tolerance and function expandability.
  • the chip system 40 may be an FPGA, in which the first functional chip 401 may be a CLB in the FPGA; the core module 4021 in the second functional chip 402 may be an SB in the FPGA, and the second functional chip 402 may be an SB in the FPGA.
  • the interconnection module 4022 may be a CB in the FPGA; and the input and output chip 404 may be an IOB in the FPGA.
  • the chip system 40 is an FPGA.
  • the FPGA includes multiple CLBs.
  • the CLBs are composed of a look-up table (LUT) and a register (Register).
  • the look-up table is used to implement combinational logic functions.
  • the registers inside the FPGA can be configured as flip-flops with synchronous/asynchronous reset and set, clock enable, or as latches.
  • a CLB can consist of a lookup table and a register, or any other number of combinations.
  • the CLB may be the first functional chip 401 located at the bottom of the chip system 40 .
  • SB and CB are respectively located in the core module 4021 and interconnection module 4022 in the second functional chip 402.
  • One SB in each second functional chip can be connected to the four lower ones through four CBs.
  • One functional chip 401 namely CLB.
  • the IOB in the FPGA can be set on the input and output chip 404, so that the FPGA communicates with the external system through the IOB.
  • the chip system 40 may be a GPU, where the first functional chip 401 may be an SM in the GPU; the core module 4021 in the second functional chip 402 may be a video memory chip in the GPU, and the second functional chip 402
  • the interconnection module 4022 in can be the video memory controller in the GPU; and the input and output chip 404 can be the I/O and other peripheral circuits in the GPU.
  • the chip system 40 is a GPU, and the GPU includes multiple SMs.
  • the SM can be a processor with a single-instruction multi-thread architecture and is mainly used to perform computing operations.
  • the SM can be the first processor located at the bottom of the chip system 40 Function chip 401.
  • the video memory chip and video memory controller in the GPU are respectively located in the core module 4021 and the interconnection module 4022 in the second function chip 402.
  • Each video memory chip in the second function chip 402 can pass four video memory controllers. They are respectively connected to the four first function chips 401 below, namely SM.
  • the SM also includes a first-level cache and a register, and a second-level cache is also connected between the SM and the video memory controller.
  • the registers can be connected to the video memory controller via the first-level cache and the second-level cache in turn.
  • the first-level cache here can be set in the first functional chip 401
  • the second-level cache can be set in the second functional chip 402; or it can be additionally set between the first functional chip 401 and the second functional chip 402.
  • I/O and other peripheral circuits in the GPU can be provided on the input and output chip 404, so that the GPU communicates with external systems through I/O.
  • Embodiments of the present disclosure provide a chip system.
  • the second functional chip is located on the first functional chip arranged in an array, and the projection of the second functional chip on the first substrate is respectively the same as that of at least two first functional chips on the first substrate.
  • the projections on the substrate at least partially overlap, and the second functional chip and at least two first functional chips are bonded and connected in the overlapping area and have multiple connection channels.
  • the first functional chip and the second functional chip arranged in a staggered stack reduce the size of the chip system; on the other hand, multiple first functional chips can be interconnected through the second functional chip, which improves the efficiency of the chip system.
  • the chip system is scalable, and the failure of a single chip will not affect the entire chip system, and the fault tolerance rate is high.

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Abstract

The present disclosure provides a chip system. The chip system comprises: a first substrate; a plurality of first functional chips arranged in an array on the first substrate; and a plurality of second functional chips located on the surfaces of the first functional chips; wherein the first functional chips and the second functional chips have different types of functions; the projection of each second functional chip on the first substrate at least partially overlaps the projections of at least two first functional chips on the first substrate, respectively; the second functional chip and the at least two first functional chips are bonded in the overlapping areas; a multi-path connection channel is provided between the first functional chips and the second functional chip which are bonded; and the multi-path connection channel is configured to provide signal communication between the second functional chip and the at least two first functional chips.

Description

芯片系统chip system
相关申请的交叉引用Cross-references to related applications
本申请基于申请号为202210858221.7,申请日为2022年7月21日、申请名称为“芯片系统”的中国专利申请提出,并要求该中国专利申请的优先权,该中国专利申请的全部内容在此引入本申请作为参考。This application is based on a Chinese patent application with application number 202210858221.7, the filing date is July 21, 2022, and the application name is "Chip System", and claims the priority of the Chinese patent application. The full content of the Chinese patent application is here This application is incorporated by reference.
技术领域Technical field
本公开涉及半导体技术领域,涉及但不限于一种芯片系统。The present disclosure relates to the field of semiconductor technology, and is related to but not limited to a chip system.
背景技术Background technique
随着大数据时代的到来,5G、AIoT的快速发展对芯片性能的要求越来越高,主要体现在大容量、高带宽、高运算速率、低延迟等方面;然而摩尔定律的发展已经放缓,器件特征尺寸已逼近物理极限,材料和工艺研发也遇到了瓶颈。三维集成技术将二维的芯片互连结构改为三维互连,极大提升了封装密度,从而提升了芯片性能。With the advent of the big data era, the rapid development of 5G and AIoT has placed higher and higher requirements on chip performance, mainly reflected in large capacity, high bandwidth, high computing speed, low latency, etc.; however, the development of Moore's Law has slowed down. , the device characteristic size has approached the physical limit, and material and process research and development have also encountered bottlenecks. Three-dimensional integration technology changes the two-dimensional chip interconnection structure into three-dimensional interconnection, which greatly increases the packaging density and thus improves chip performance.
然而,现有的三维集成技术多倾向于将少数不同功能的芯片构建为小型的芯片系统。在面向超级计算机、服务器、交换机等超高算力、超高带宽的需求时,仍需要将已构建好的小型芯片系统互连,拼凑构建为超大型芯片系统,这样会导致芯片系统的体积较大,互连速率也较低。However, existing three-dimensional integration technologies tend to build a small number of chips with different functions into small chip systems. When facing the demand for ultra-high computing power and ultra-high bandwidth in supercomputers, servers, switches, etc., it is still necessary to interconnect the small chip systems that have been built and piece them together into a very large chip system. This will result in a larger chip system. large, and the interconnection speed is also lower.
发明内容Contents of the invention
有鉴于此,本公开实施例提供了一种芯片系统,包括:In view of this, embodiments of the present disclosure provide a chip system, including:
第一基板;first substrate;
位于所述第一基板上阵列排布的多个第一功能芯片;以及A plurality of first functional chips arranged in an array on the first substrate; and
位于所述第一功能芯片表面上的多个第二功能芯片;a plurality of second functional chips located on the surface of the first functional chip;
其中,所述第一功能芯片与所述第二功能芯片具有不同类型的功能;每个所述第二功能芯片在所述第一基板上的投影分别与至少两个所述第一功能芯片在所述第一基板上的投影至少部分重叠;所述第二功能芯片与至少两个所述第一功能芯片在重叠的区域内键合连接;Wherein, the first functional chip and the second functional chip have different types of functions; the projection of each second functional chip on the first substrate is respectively different from that of at least two first functional chips. The projections on the first substrate at least partially overlap; the second functional chip and at least two of the first functional chips are bonded and connected in the overlapping area;
键合连接的所述第一功能芯片与所述第二功能芯片之间具有多路连接通道;所述多路连接通道被配置为使所述第二功能芯片与至少两个所述第一功能芯片之间具有信号通信。There are multiple connection channels between the first functional chip and the second functional chip that are bonded together; the multiple connection channels are configured to connect the second functional chip with at least two of the first functional chips. There is signal communication between chips.
在一些实施例中,任意四个两两相邻的所述第一功能芯片与同一个所述第二功能芯片连接。In some embodiments, any four adjacent first functional chips are connected to the same second functional chip.
在一些实施例中,所述第一功能芯片包括功能模块;In some embodiments, the first functional chip includes a functional module;
所述第二功能芯片包括至少一个核心模块和多个互连模块;所述互连模块位于所述第二功能芯片中与所述第一功能芯片重叠的区域,所述核心模块位于所述第二功能芯片中除所述互连模块以外的区域。The second functional chip includes at least one core module and a plurality of interconnection modules; the interconnection module is located in an area of the second functional chip that overlaps the first functional chip, and the core module is located in the first functional chip. The area in the dual-function chip other than the interconnection module.
在一些实施例中,所述功能模块包括处理器;所述核心模块包括存储器,所述互连模块包括存储控制器。In some embodiments, the functional module includes a processor; the core module includes a memory, and the interconnect module includes a memory controller.
在一些实施例中,所述功能模块包括可编程逻辑单元;所述核心模块包括开关单元,所述互连模块包括连接单元。In some embodiments, the functional module includes a programmable logic unit; the core module includes a switch unit, and the interconnection module includes a connection unit.
在一些实施例中,相邻的所述第一功能芯片之间具有间隙;In some embodiments, there is a gap between adjacent first functional chips;
所述第二功能芯片在所述间隙所在区域内通过第一互连结构与所述第一基板连接。The second functional chip is connected to the first substrate through a first interconnection structure in the area where the gap is located.
在一些实施例中,所述芯片系统还包括:In some embodiments, the chip system further includes:
位于所述第二功能芯片上,且阵列排布的多个第三功能芯片;A plurality of third functional chips located on the second functional chip and arranged in an array;
其中,所述第三功能芯片与所述第二功能芯片具有不同类型的功能;每个所述第二功能芯片在所述第一基板上的投影分别与至少两个所述第三功能芯片在所述第一基板上的投影至少部分重叠;所述第二功能芯片与至少两个所述第三功能芯片在重叠的区域内键合连接;Wherein, the third functional chip and the second functional chip have different types of functions; the projection of each second functional chip on the first substrate is respectively different from that of at least two third functional chips. The projections on the first substrate at least partially overlap; the second functional chip and at least two third functional chips are bonded and connected in the overlapping area;
键合连接的所述第三功能芯片与所述第二功能芯片之间具有多路连接通道;所述多路连接通道被配置为使所述第二功能芯片与至少两个所述第三功能芯片之间具有信号通信。There are multiple connection channels between the bonded third functional chip and the second functional chip; the multiple connection channels are configured to connect the second functional chip with at least two of the third functional chips. There is signal communication between chips.
在一些实施例中,所述第三功能芯片在所述第一基板上的投影与所述第一功能芯片在所述第一基板上的投影重叠;In some embodiments, the projection of the third functional chip on the first substrate overlaps with the projection of the first functional chip on the first substrate;
所述第三功能芯片与所述第一功能芯片之间具有第二互连结构。There is a second interconnection structure between the third functional chip and the first functional chip.
在一些实施例中,所述芯片系统还包括:In some embodiments, the chip system further includes:
位于所述第二功能芯片上,且阵列排布的多个第三功能芯片;A plurality of third functional chips located on the second functional chip and arranged in an array;
其中,所述第三功能芯片与所述第二功能芯片具有不同类型的功能;每个所述第三功能芯片在所述第一基板上的投影分别与至少两个所述第二功能芯片在所述第一基板上的投影至少部分重叠;所述第三功能芯片与至少两个所述第二功能芯片在重叠的区域内键合连接;Wherein, the third functional chip and the second functional chip have different types of functions; the projection of each third functional chip on the first substrate is respectively different from that of at least two second functional chips. The projections on the first substrate at least partially overlap; the third functional chip and at least two second functional chips are bonded and connected in the overlapping area;
键合连接的所述第三功能芯片与所述第二功能芯片之间具有多路连接通道;所述多路连接通道被配置为使所述第三功能芯片与至少两个所述第二功能芯片之间具有信号通信。There are multiple connection channels between the bonded third functional chip and the second functional chip; the multiple connection channels are configured to connect the third functional chip with at least two of the second functional chips. There is signal communication between chips.
在一些实施例中,所述芯片系统还包括:In some embodiments, the chip system further includes:
多个输入输出芯片;Multiple input and output chips;
任意一个所述输入输出芯片至少与一个所述第一功能芯片或所述第二功能芯片连接。Any one of the input and output chips is connected to at least one of the first functional chip or the second functional chip.
在一些实施例中,所述输入输出芯片位于所述第一基板的边缘;所述阵列排布的多个第一功能芯片中靠近第一基板边缘的所述第一功能芯片与所述输入输出芯片通过所述第一基板连接。In some embodiments, the input/output chip is located at the edge of the first substrate; among the plurality of first functional chips arranged in the array, the first functional chip close to the edge of the first substrate is different from the input/output chip. The chips are connected through the first substrate.
在一些实施例中,所述输入输出芯片位于任意两个相邻的所述第一功能芯片之间的空隙内,且所述输入输出芯片位于所述第二功能芯片的覆盖范围内;In some embodiments, the input/output chip is located in the gap between any two adjacent first functional chips, and the input/output chip is located within the coverage of the second functional chip;
所述输入输出芯片与所述第二功能芯片键合连接,且所述输入输出芯片还与所述第一基板键合连接。The input-output chip is bonded and connected to the second functional chip, and the input-output chip is also bonded and connected to the first substrate.
在一些实施例中,所述输入输出芯片位于所述第一功能芯片上所述第二功能芯片的相邻位置;In some embodiments, the input-output chip is located adjacent to the second functional chip on the first functional chip;
所述输入输出芯片在所述第一基板上的投影分别与两个相邻的所述第一功能芯片重叠,且所述输入输出芯片与所述第一功能芯片在重叠的区域内键合连接。The projection of the input/output chip on the first substrate overlaps with two adjacent first functional chips respectively, and the input/output chip and the first functional chip are bonded and connected in the overlapping area. .
在一些实施例中,所述芯片系统还包括:In some embodiments, the chip system further includes:
第二基板,覆盖于所述第二功能芯片和所述输入输出芯片上;a second substrate covering the second functional chip and the input/output chip;
所述第二基板与所述输入输出芯片键合连接,且所述输入输出芯片与所述第二基板之间具有输入输出通道;The second substrate is bonded and connected to the input/output chip, and there is an input/output channel between the input/output chip and the second substrate;
所述第二基板内具有重布线层;所述重布线层中具有连接所述输入输出芯片与所述第二基板表面的信号通道。The second substrate has a rewiring layer; the rewiring layer has a signal channel connecting the input and output chip and the surface of the second substrate.
在一些实施例中,所述芯片系统还包括:In some embodiments, the chip system further includes:
散热结构,覆盖所述第一功能芯片和所述第二功能芯片;A heat dissipation structure covering the first functional chip and the second functional chip;
其中,所述散热结构在覆盖所述第一功能芯片表面的区域内与所述第一功能芯片表面接触;所述散热结构覆盖所述第二功能芯片表面的区域与所述第二功能芯片表面接触;所述散热结构覆盖所述第一功能芯片之间裸露的所述第一基板的区域内与所述第一基板接触。Wherein, the heat dissipation structure is in contact with the surface of the first functional chip in an area covering the surface of the first functional chip; the heat dissipation structure covers an area of the surface of the second functional chip and the surface of the second functional chip. Contact; the heat dissipation structure is in contact with the first substrate in a region covering the exposed first substrate between the first functional chips.
在一些实施例中,所述散热结构包括多个凸起结构;In some embodiments, the heat dissipation structure includes a plurality of protruding structures;
位于覆盖所述第一功能芯片的区域内的所述凸起结构,向所述第一功能芯片表面延伸并接触所述第一功能芯片;The protruding structure located in the area covering the first functional chip extends toward the surface of the first functional chip and contacts the first functional chip;
位于覆盖所述第一功能芯片之间裸露的所述第一基板的区域内的所述凸起结构,向所述第一基板延伸并接触所述第一基板。The protruding structure located in the area covering the exposed first substrate between the first functional chips extends toward the first substrate and contacts the first substrate.
附图说明Description of drawings
图1为本公开实施例提供的一种芯片系统的示意图;Figure 1 is a schematic diagram of a chip system provided by an embodiment of the present disclosure;
图2为本公开实施例提供的一种芯片系统的俯视图;Figure 2 is a top view of a chip system provided by an embodiment of the present disclosure;
图3为本公开实施例提供的另一种芯片系统的俯视图;Figure 3 is a top view of another chip system provided by an embodiment of the present disclosure;
图4为本公开实施例提供的一种芯片系统中第一互连结构的示意图;Figure 4 is a schematic diagram of a first interconnection structure in a chip system provided by an embodiment of the present disclosure;
图5为本公开实施例提供的一种芯片系统中第三功能芯片的示意图;Figure 5 is a schematic diagram of a third functional chip in a chip system provided by an embodiment of the present disclosure;
图6为本公开实施例提供的另一种芯片系统中第三功能芯片的示意图;Figure 6 is a schematic diagram of a third functional chip in another chip system provided by an embodiment of the present disclosure;
图7为本公开实施例提供的一种芯片系统中输入输出芯片的俯视图;Figure 7 is a top view of an input and output chip in a chip system provided by an embodiment of the present disclosure;
图8为本公开实施例提供的一种芯片系统中输入输出芯片的剖视图;Figure 8 is a cross-sectional view of an input and output chip in a chip system provided by an embodiment of the present disclosure;
图9为本公开实施例提供的另一种芯片系统中输入输出芯片的俯视图;Figure 9 is a top view of an input and output chip in another chip system provided by an embodiment of the present disclosure;
图10为本公开实施例提供的另一种芯片系统中输入输出芯片的剖视图;Figure 10 is a cross-sectional view of an input and output chip in another chip system provided by an embodiment of the present disclosure;
图11为本公开实施例提供的又一种芯片系统中输入输出芯片的俯视图;Figure 11 is a top view of an input and output chip in yet another chip system provided by an embodiment of the present disclosure;
图12为本公开实施例提供的又一种芯片系统中输入输出芯片的剖视图;Figure 12 is a cross-sectional view of an input and output chip in yet another chip system provided by an embodiment of the present disclosure;
图13为本公开实施例提供的一种芯片系统中第二基板的示意图;Figure 13 is a schematic diagram of a second substrate in a chip system provided by an embodiment of the present disclosure;
图14为本公开实施例提供的一种芯片系统中散热结构的俯视图;Figure 14 is a top view of a heat dissipation structure in a chip system provided by an embodiment of the present disclosure;
图15为本公开实施例提供的一种芯片系统中散热结构的剖视图;Figure 15 is a cross-sectional view of a heat dissipation structure in a chip system provided by an embodiment of the present disclosure;
图16为本公开实施例提供的一种芯片系统中散热结构在另一方向的剖视图;Figure 16 is a cross-sectional view of the heat dissipation structure in another direction in a chip system provided by an embodiment of the present disclosure;
图17为本公开实施例提供的又一种芯片系统的示意图。Figure 17 is a schematic diagram of another chip system provided by an embodiment of the present disclosure.
具体实施方式Detailed ways
为了便于理解本公开,下面将参照相关附图更详细地描述本公开的示例性实施方式。虽然附图中显示了本公开的示例性实施方式,然而应当理解,可以以各种形式实现本公开,而不应被这里阐述的具体实施方式所限制。相反,提供这些实施方式是为了能够更透彻地理解本公开,并且能够将本公开的范围完整的传达给本领域的技术人员。To facilitate understanding of the present disclosure, exemplary embodiments of the present disclosure will be described in more detail below with reference to the relevant drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the disclosure may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided to provide a thorough understanding of the disclosure, and to fully convey the scope of the disclosure to those skilled in the art.
在下文的描述中,给出了大量具体的细节以便提供对本公开更为彻底的理解。然而,对于本领域技术人员而言显而易见的是,本公开可以无需一个或多个这些细节而得以实施。在一些实施例中,为了避免与本公开发生混淆,对于本领域公知的一些技术特征未进行描述;即这里可以不描述实际实施例的全部特征,不详细描述公知的功能和结构。In the following description, numerous specific details are given in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one skilled in the art that the present disclosure may be practiced without one or more of these details. In some embodiments, in order to avoid confusion with the present disclosure, some technical features well-known in the art are not described; that is, all features of the actual embodiments may not be described here, and well-known functions and structures may not be described in detail.
一般地,术语可以至少部分地从上下文中的使用来理解。例如,至少部分地取决于上下文,如本文中所用的术语“一个或多个”可以用于以单数意义描述任何特征、结构或特性,或者可以用于以复数意义描述特征、结构或特性的组合。类似地,诸如“一”或“所述”的术语同样可以被理解为传达单数用法或传达复数用法,这至少部分地取决于上下文。另外,属于“基于”可以被理解为不一定旨在传达排他的一组因素,并且可以替代地允许存在不一定明确地描述的附加因素,这同样至少部分地取决于上下文。Generally, terms can be understood, at least in part, from context of use. For example, depending at least in part on context, the term "one or more" as used herein may be used in the singular to describe any feature, structure or characteristic, or may be used in the plural to describe a combination of features, structures or characteristics. . Similarly, terms such as "a" or "the" may equally be understood to convey a singular usage or to convey a plural usage, depending at least in part on the context. Additionally, the term "based on" may be understood as not necessarily intended to convey an exclusive set of factors, and may instead allow for the presence of additional factors that are not necessarily explicitly described, again depending at least in part on context.
除非另有定义,本文所使用的术语的目的仅在于描述具体实施例并且不作为本公开的限制。在此使用时,单数形式的“一”、“一个”和“所述/该”也意图包括复数形式,除非上下文清楚指出另外的方式。还应明白术语“组成”和/或“包括”,当在该说明书中使用时,确定所述特征、整数、步骤、操作、元件和/或部件的存在,但不排除一个或更多其它的特征、整数、步骤、操作、元件、部件和/或组的存在或添加。在此使用时,术语“和/或”包括相关所列项目的任何及所有组合。Unless otherwise defined, the terms used herein are for the purpose of describing particular embodiments only and are not intended to be limiting of the disclosure. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It will also be understood that the terms "consisting of" and/or "comprising", when used in this specification, identify the presence of stated features, integers, steps, operations, elements and/or parts but do not exclude one or more others The presence or addition of features, integers, steps, operations, elements, parts, and/or groups. When used herein, the term "and/or" includes any and all combinations of the associated listed items.
为了彻底理解本公开,将在下列的描述中提出详细的步骤以及详细的结构,以便阐释本公开的技术方案。本公开的较佳实施例详细描述如下,然而除了这些详细描述外,本公开还可以具有其他实施方式。In order to thoroughly understand the present disclosure, detailed steps and detailed structures will be provided in the following description to explain the technical solutions of the present disclosure. Preferred embodiments of the present disclosure are described in detail below, however, in addition to these detailed descriptions, the present disclosure may also have other implementations.
如图1所示,本公开实施例提供了一种芯片系统10,包括:As shown in Figure 1, an embodiment of the present disclosure provides a chip system 10, including:
第一基板100; first substrate 100;
位于所述第一基板100上阵列排布的多个第一功能芯片101;以及A plurality of first functional chips 101 arranged in an array on the first substrate 100; and
位于所述第一功能芯片101表面上的多个第二功能芯片102;A plurality of second functional chips 102 located on the surface of the first functional chip 101;
其中,所述第一功能芯片101与所述第二功能芯片102具有不同类型的功能;每个所述第二功能芯片102在所述第一基板100上的投影分别与至少两个所述第一功能芯片101在所述第一基板100上的投影至少部分重叠;所述第二功能芯片102与至少两个所述第一功能芯片101在重叠的区域内键合连接;Wherein, the first functional chip 101 and the second functional chip 102 have different types of functions; the projection of each second functional chip 102 on the first substrate 100 is different from at least two of the second functional chips 102 . The projection of a functional chip 101 on the first substrate 100 at least partially overlaps; the second functional chip 102 and at least two first functional chips 101 are bonded and connected in the overlapping area;
键合连接的所述第一功能芯片101与所述第二功能芯片102之间具有多路连接通道110;所述多路连接通道110被配置为使所述第二功能芯片102与至少两个所述第一功能芯片101之间具有信号通信。There is a multi-way connection channel 110 between the bonded first functional chip 101 and the second functional chip 102; the multi-way connection channel 110 is configured to connect the second functional chip 102 with at least two There is signal communication between the first functional chips 101 .
应当理解,图中为了使得各层结构均能被清晰示出,可能造成各层结构的尺寸比例关系与实际结构不符。在一些实施例中,可以通过晶圆重组的方式,在封装前构建多芯 片的二维网络系统,这种情况的多芯片互连结构分布在位于重组晶圆底部的有机再布线层,互连密度和速率较低。It should be understood that in order to clearly illustrate each layer structure in the figure, the dimensional proportional relationship of each layer structure may be inconsistent with the actual structure. In some embodiments, a multi-chip two-dimensional network system can be constructed through wafer reorganization before packaging. In this case, the multi-chip interconnection structure is distributed in the organic rewiring layer located at the bottom of the restructured wafer. Density and velocity are lower.
在本公开实施例中,第一基板100包括但不限于有机基板、陶瓷基板、硅基板和散热衬底等。第一基板100可以用于承载芯片系统10中的多个芯片,增强芯片系统10的散热能力,以及将多个芯片电性引出等。In the embodiment of the present disclosure, the first substrate 100 includes but is not limited to an organic substrate, a ceramic substrate, a silicon substrate, a heat dissipation substrate, and the like. The first substrate 100 can be used to carry multiple chips in the chip system 10, enhance the heat dissipation capability of the chip system 10, and electrically lead out the multiple chips.
多个呈阵列排布的第一功能芯片101位于第一基板100上,每两个第一功能芯片101之间可以具有间隙,且多个第一功能芯片101之间可以不进行直接互连。第一功能芯片101可以为裸片(die),多个第一功能芯片101也可以为位于同一个晶圆上未经过切割的多个裸片,在一些实施例中,第一功能芯片101可以为已知良好芯片(Known Good Die,KGD),以提高芯片系统10的可靠性。第一功能芯片101的类型包括但不限于现场可编程门阵列(Field Programmable Gate Array,FPGA)中的可编程逻辑功能块(Configurable Logic Block,CLB)、图形处理器(Graphics Processing Unit,GPU)中的流式多处理器(Streaming Multiprocesser,SM)等。A plurality of first functional chips 101 arranged in an array are located on the first substrate 100. There may be a gap between each two first functional chips 101, and the plurality of first functional chips 101 may not be directly interconnected. The first functional chip 101 may be a die, and the multiple first functional chips 101 may also be multiple uncut die located on the same wafer. In some embodiments, the first functional chip 101 may It is a known good die (KGD) to improve the reliability of the chip system 10 . The type of the first function chip 101 includes but is not limited to the programmable logic function block (Configurable Logic Block, CLB) in the field programmable gate array (Field Programmable Gate Array, FPGA), the graphics processor (Graphics Processing Unit, GPU) Streaming Multiprocessor (SM), etc.
多个第二功能芯片102位于多个第一功能芯片101远离第一基板100一侧的表面上。每一个第二功能芯片102在垂直于第一基板100表面的方向上与至少两个第一功能芯片101具有重叠区域。每个第二功能芯片102与其下方的至少两个第一功能芯片101在重叠区域内键合连接,且键合连接的第一功能芯片101与第二功能芯片102之间具有多路连接通道110。第二功能芯片102与第一功能芯片101之间可以通过多路连接通道110实现双向的信号通信。第二功能芯片102的类型包括但不限于FPGA中的连接功能块(Connect Block,CB)和开关功能块(Switch Block,SB)、GPU中的显存芯片(Memory)和显存控制器(Memory Controller)等。示例性地,可以通过混合键合(Hybrid Bonding)工艺,在重叠区域内将第二功能芯片102键合连接至少两个第一功能芯片101,并形成多路连接通道110。混合键合工艺可以使得多路连接通道110具有良好的传输稳定性和信号完整性,且多路连接通道110的间距(Pitch)较小,单位面积上多路连接通道110的数量较多,各芯片之间的距离较短,从而在提高芯片系统10集成度的同时,增加了信号传输的速度和带宽。The plurality of second functional chips 102 are located on the surface of the plurality of first functional chips 101 away from the first substrate 100 . Each second functional chip 102 has an overlapping area with at least two first functional chips 101 in a direction perpendicular to the surface of the first substrate 100 . Each second functional chip 102 is bonded and connected with at least two first functional chips 101 below it in the overlapping area, and there are multiple connection channels 110 between the bonded-connected first functional chips 101 and the second functional chips 102 . Bidirectional signal communication can be achieved between the second functional chip 102 and the first functional chip 101 through the multi-channel connection channel 110 . The type of the second function chip 102 includes but is not limited to the Connect Block (CB) and Switch Block (SB) in the FPGA, the video memory chip (Memory) and the video memory controller (Memory Controller) in the GPU. wait. For example, the second functional chip 102 can be bonded to at least two first functional chips 101 in the overlapping area through a hybrid bonding process, and a multi-way connection channel 110 can be formed. The hybrid bonding process can make the multiple connection channels 110 have good transmission stability and signal integrity, and the pitch of the multiple connection channels 110 is small, and the number of multiple connection channels 110 per unit area is large. The distance between chips is short, thereby increasing the integration level of the chip system 10 while increasing the speed and bandwidth of signal transmission.
此外,第二功能芯片102除了自身具有的器件的功能外,还可以起到中介层(Interposer)的作用,故两个相邻的第一功能芯片101可以通过第二功能芯片102进行通信,而芯片系统10则可以基于多个第二功能芯片102,形成网状的互连结构。由于芯片系统10中多个芯片的类型可以相同也可以不同,从而使得芯片系统10具有良好的功能拓展性,且任意一个芯片失效不会影响整个芯片系统10,容错率较高。可以理解的是,第一功能芯片101还可以通过其他方式连接第二功能芯片102,如引线、微凸块等。在一些实施例中,第一功能芯片101还可以通过混合键合、引线、微凸块等方式连接第一基板100,并在第一功能芯片101和第一基板100之间形成多路连接通道110。In addition, in addition to the function of the device itself, the second functional chip 102 can also play the role of an interposer. Therefore, two adjacent first functional chips 101 can communicate through the second functional chip 102. The chip system 10 can be based on a plurality of second function chips 102 to form a mesh interconnection structure. Since the types of multiple chips in the chip system 10 can be the same or different, the chip system 10 has good functional scalability, and the failure of any one chip will not affect the entire chip system 10, and the fault tolerance rate is high. It can be understood that the first functional chip 101 can also be connected to the second functional chip 102 through other means, such as leads, micro-bumps, etc. In some embodiments, the first functional chip 101 can also be connected to the first substrate 100 through hybrid bonding, wires, micro-bumps, etc., and form multiple connection channels between the first functional chip 101 and the first substrate 100 110.
第一功能芯片101与第二功能芯片102可以具有不同类型的功能,示例性地,第一功能芯片101与第二功能芯片102中的一者可以用于逻辑运算处理,而另一者则用于路由交换、感测识别外界信号和/或数据存储等。在一些实施例中,第二功能芯片102中可以具有有源器件,用于信号放大、转换以及运算等。在一些实施例中,第一功能芯片101 与第二功能芯片102的组合还可以包括逻辑芯片与存储芯片,逻辑芯片与图像芯片,逻辑芯片、存储芯片与图像芯片等,这里的存储芯片包括但不限于静态随机存取存储器(Static Random Access Memory,SRAM)和动态随机存取存储器(Dynamic Random Access Memory,DRAM)等。The first functional chip 101 and the second functional chip 102 may have different types of functions. For example, one of the first functional chip 101 and the second functional chip 102 may be used for logical operation processing, while the other may be used for logical operation processing. Used in routing and switching, sensing and identifying external signals and/or data storage, etc. In some embodiments, the second functional chip 102 may have active devices for signal amplification, conversion, calculation, etc. In some embodiments, the combination of the first functional chip 101 and the second functional chip 102 may also include a logic chip and a memory chip, a logic chip and an image chip, a logic chip, a memory chip and an image chip, etc. The memory chips here include but Not limited to static random access memory (Static Random Access Memory, SRAM) and dynamic random access memory (Dynamic Random Access Memory, DRAM), etc.
在一些实施例中,如图2所示为芯片系统10的俯视图,任意四个两两相邻的所述第一功能芯片101与同一个所述第二功能芯片102连接。In some embodiments, as shown in FIG. 2 , which is a top view of the chip system 10 , any four adjacent first functional chips 101 are connected to the same second functional chip 102 .
在本公开实施例中,在垂直于第一基板100表面的方向上,第二功能芯片102与其下方的四个两两相邻的第一功能芯片101之间具有重叠区域,且第二功能芯片102与四个第一功能芯片101在重叠区域内键合连接,并形成有多路连接通道。如此,如图2中箭头所示,每个第一功能芯片101都可以通过第二功能芯片102与相邻的另一个第一功能芯片101进行信号的输入和输出;而互相间隔的多个第一功能芯片101则可以通过多个第二功能芯片102进行通信,即整个芯片系统10呈网状互连的结构。故芯片系统10具有良好的功能拓展性,且任意一个芯片失效不会影响整个芯片系统10,容错率较高。In the embodiment of the present disclosure, in a direction perpendicular to the surface of the first substrate 100, there is an overlapping area between the second functional chip 102 and the four two-by-two adjacent first functional chips 101 below it, and the second functional chip 102 is bonded and connected with the four first functional chips 101 in the overlapping area, and forms a multi-way connection channel. In this way, as shown by the arrows in Figure 2, each first functional chip 101 can input and output signals with another adjacent first functional chip 101 through the second functional chip 102; and multiple third functional chips that are spaced apart from each other. One functional chip 101 can communicate through multiple second functional chips 102, that is, the entire chip system 10 has a mesh interconnection structure. Therefore, the chip system 10 has good functional scalability, and the failure of any one chip will not affect the entire chip system 10, and the fault tolerance rate is high.
在一些实施例中,如图3所示,所述第一功能芯片101包括功能模块1011;In some embodiments, as shown in Figure 3, the first functional chip 101 includes a functional module 1011;
所述第二功能芯片102包括至少一个核心模块1021和多个互连模块1022;所述互连模块1022位于所述第二功能芯片102中与所述第一功能芯片101重叠的区域,所述核心模块1021位于所述第二功能芯片102中除所述互连模块1022以外的区域。The second functional chip 102 includes at least one core module 1021 and a plurality of interconnection modules 1022; the interconnection modules 1022 are located in an area of the second functional chip 102 that overlaps with the first functional chip 101. The core module 1021 is located in an area of the second functional chip 102 other than the interconnection module 1022 .
在本公开实施例中,第一功能芯片101中具有实现特定功能的功能模块1011,多个第一功能芯片101中的功能模块1011可以相同,也可以不同。示例性地,功能模块1011可以作为控制器,以控制芯片系统10中的其他芯片进行各自的工作;功能模块1011还可以用于逻辑运算,如进行浮点计算、整数计算等。In this embodiment of the present disclosure, the first functional chip 101 has functional modules 1011 that implement specific functions. The functional modules 1011 in multiple first functional chips 101 may be the same or different. For example, the functional module 1011 can be used as a controller to control other chips in the chip system 10 to perform their respective tasks; the functional module 1011 can also be used for logical operations, such as floating point calculations, integer calculations, etc.
第二功能芯片102包括至少一个核心模块1021和多个互连模块1022。核心模块1021可以位于第二功能芯片102的中央区域;互连模块1022则可以位于核心模块1021的周围,如第二功能芯片102中与第一功能芯片101重叠的区域。核心模块1021和互连模块1022可以根据第一功能芯片101发出的指令实现各自的功能,如数据存储、信号感测、路由交换等。可以理解的是,多路连接通道可以位于互连模块1022所在的区域内,即第二功能芯片102通过互连模块1022实现与其他芯片的通信。The second functional chip 102 includes at least one core module 1021 and a plurality of interconnection modules 1022. The core module 1021 may be located in the central area of the second functional chip 102; the interconnection module 1022 may be located around the core module 1021, such as the area in the second functional chip 102 that overlaps the first functional chip 101. The core module 1021 and the interconnection module 1022 can implement their respective functions according to instructions issued by the first functional chip 101, such as data storage, signal sensing, routing and switching, etc. It can be understood that the multi-channel connection channel may be located in the area where the interconnection module 1022 is located, that is, the second functional chip 102 implements communication with other chips through the interconnection module 1022.
在一些实施例中,所述功能模块1011包括处理器;所述核心模块1021包括存储器,所述互连模块1022包括存储控制器。In some embodiments, the functional module 1011 includes a processor; the core module 1021 includes a memory, and the interconnection module 1022 includes a storage controller.
在本公开实施例中,第一功能芯片101中的功能模块1011可以为处理器,如SM、数字信号处理器(Digital Signal Processor,DSP)、微控制单元(Microcontroller Unit,MCU)、微处理器单元(Micro Processor Unit,MPU)等。第二功能芯片102中的核心模块1021可以为存储器,如DRAM、SRAM、磁性随机存储器(Magnetoresistive Random Access Memory,MRAM)等;而第二功能芯片102中的互连模块1022则可以为存储控制器,用于根据处理器发出的指令对存储器进行操作。如此,芯片系统10可以具有更高的集成度,同时实现更好的功能拓展性。In the embodiment of the present disclosure, the functional module 1011 in the first functional chip 101 can be a processor, such as an SM, a digital signal processor (Digital Signal Processor, DSP), a microcontroller unit (Microcontroller Unit, MCU), a microprocessor Unit (Micro Processor Unit, MPU), etc. The core module 1021 in the second functional chip 102 can be a memory, such as DRAM, SRAM, magnetic random access memory (Magnetoresistive Random Access Memory, MRAM), etc.; and the interconnection module 1022 in the second functional chip 102 can be a memory controller. , used to operate the memory according to instructions issued by the processor. In this way, the chip system 10 can have a higher integration level and achieve better functional scalability.
在一些实施例中,所述功能模块1011包括可编程逻辑单元;所述核心模块1021包括开关单元,所述互连模块1022包括连接单元。In some embodiments, the functional module 1011 includes a programmable logic unit; the core module 1021 includes a switch unit, and the interconnection module 1022 includes a connection unit.
在本公开实施例中,第一功能芯片101中的功能模块1011可以为可编程逻辑单元,其具有配置灵活、编程方法简便等优点;第二功能芯片102中的核心模块1021可以为开关单元,用于实现布线方向的切换和不同布线类型间的切换;而第二功能芯片102中的互连模块1022则可以为连接单元,用于提供丰富的布线资源,增加布线的灵活性。如此,芯片系统10的设计灵活性更强,泛用性更好。In the embodiment of the present disclosure, the functional module 1011 in the first functional chip 101 can be a programmable logic unit, which has the advantages of flexible configuration and simple programming method; the core module 1021 in the second functional chip 102 can be a switch unit, It is used to realize switching of wiring directions and switching between different wiring types; and the interconnection module 1022 in the second functional chip 102 can be a connection unit, used to provide rich wiring resources and increase the flexibility of wiring. In this way, the chip system 10 has greater design flexibility and better versatility.
在一些实施例中,如图4所示,相邻的所述第一功能芯片101之间具有间隙;In some embodiments, as shown in Figure 4, there is a gap between adjacent first functional chips 101;
所述第二功能芯片102在所述间隙所在区域内通过第一互连结构111与所述第一基板100连接。The second functional chip 102 is connected to the first substrate 100 through the first interconnection structure 111 in the area where the gap is located.
在本公开实施例中,相邻的第一功能芯片101之间具有间隙,第二功能芯片102可以通过位于间隙中的第一互连结构111与第一基板100连接。第一互连结构111可以为金属、掺杂半导体等导电材料,且第一互连结构111的长度可以大于或等于第一功能芯片101的厚度。示例性地,第一互连结构111可以为过模通孔(Through Mold Via,TMV)、穿电介质通孔(Through Dielectric Via,TDV)、引线等。第一互连结构111可以垂直于第一基板100的表面,也可以为弯曲、倾斜等非垂直结构,可以理解的是,第一互连结构111的长度越短,其信号传输速度越快。In the embodiment of the present disclosure, there is a gap between adjacent first functional chips 101, and the second functional chip 102 can be connected to the first substrate 100 through the first interconnection structure 111 located in the gap. The first interconnection structure 111 may be a conductive material such as metal or doped semiconductor, and the length of the first interconnection structure 111 may be greater than or equal to the thickness of the first functional chip 101 . For example, the first interconnection structure 111 may be a through mold via (TMV), a through dielectric via (Through Dielectric Via, TDV), a lead, etc. The first interconnection structure 111 may be perpendicular to the surface of the first substrate 100, or may be a non-vertical structure such as curved or inclined. It can be understood that the shorter the length of the first interconnection structure 111, the faster the signal transmission speed.
在一些实施例中,相邻的第一功能芯片101之间的间隙中还填充有绝缘材料,以隔离间隙中的多个第一互连结构111。这里的绝缘材料可以介电有机聚合物,例如环氧树脂等。In some embodiments, the gaps between adjacent first functional chips 101 are also filled with insulating material to isolate the plurality of first interconnect structures 111 in the gaps. The insulating material here can be dielectric organic polymers, such as epoxy resin, etc.
在一些实施例中,如图5所示,所述芯片系统10还包括:In some embodiments, as shown in Figure 5, the chip system 10 further includes:
位于所述第二功能芯片102上,且阵列排布的多个第三功能芯片103;A plurality of third functional chips 103 located on the second functional chip 102 and arranged in an array;
其中,所述第三功能芯片103与所述第二功能芯片102具有不同类型的功能;每个所述第二功能芯片102在所述第一基板100上的投影分别与至少两个所述第三功能芯片103在所述第一基板100上的投影至少部分重叠;所述第二功能芯片102与至少两个所述第三功能芯片103在重叠的区域内键合连接;Wherein, the third functional chip 103 and the second functional chip 102 have different types of functions; the projection of each second functional chip 102 on the first substrate 100 is different from at least two of the third functional chips 102 . The projection of the three-function chip 103 on the first substrate 100 at least partially overlaps; the second functional chip 102 and at least two third functional chips 103 are bonded and connected in the overlapping area;
键合连接的所述第三功能芯片103与所述第二功能芯片102之间具有多路连接通道110;所述多路连接通道110被配置为使所述第二功能芯片102与至少两个所述第三功能芯片103之间具有信号通信。There is a multi-way connection channel 110 between the bonded third functional chip 103 and the second functional chip 102; the multi-way connection channel 110 is configured to connect the second functional chip 102 with at least two There is signal communication between the third functional chips 103 .
在本公开实施例中,在第二功能芯片102远离第一基板100一侧的表面上,还可以具有多个呈阵列排布的第三功能芯片103。第二功能芯片102与其上方的至少两个第三功能芯片103之间具有重叠区域,且第二功能芯片102与两个第三功能芯片103在重叠区域内键合连接,并形成有多路连接通道110。第三功能芯片103与第二功能芯片102之间可以通过多路连接通道110实现双向的信号通信。In the embodiment of the present disclosure, there may also be a plurality of third functional chips 103 arranged in an array on the surface of the second functional chip 102 away from the first substrate 100 . There is an overlapping area between the second functional chip 102 and at least two third functional chips 103 above it, and the second functional chip 102 and the two third functional chips 103 are bonded and connected in the overlapping area to form a multi-way connection. Channel 110. Bidirectional signal communication can be achieved between the third functional chip 103 and the second functional chip 102 through the multi-channel connection channel 110 .
第三功能芯片103可以为裸片,在一些实施例中,第三功能芯片103可以为已知良好芯片,以提高芯片系统10的可靠性。第三功能芯片103的类型包括但不限于FPGA中的CLB、GPU中的SM等。示例性地,可以通过混合键合工艺,在重叠区域内将第二功能芯片102键合连接至少两个第三功能芯片103,并形成多路连接通道110。混合键合形成的多路连接通道110可以提高芯片系统10集成度,并增加信号传输的速度和带宽。The third functional chip 103 may be a bare chip. In some embodiments, the third functional chip 103 may be a known good chip to improve the reliability of the chip system 10 . The types of the third functional chip 103 include but are not limited to CLB in FPGA, SM in GPU, etc. For example, the second functional chip 102 can be bonded to at least two third functional chips 103 in the overlapping area through a hybrid bonding process, and a multi-way connection channel 110 can be formed. The multiple connection channels 110 formed by hybrid bonding can improve the integration level of the chip system 10 and increase the speed and bandwidth of signal transmission.
此外,两个相邻的第三功能芯片103可以通过第二功能芯片102进行通信,且第三功能芯片103还可以通过第二功能芯片102与第一功能芯片101进行通信。如此,芯片系统10具有良好的功能拓展性,且任意一个芯片失效不会影响整个芯片系统10,容错率较高。可以理解的是,第三功能芯片103还可以通过其他方式连接第二功能芯片102,如引线、微凸块等。第三功能芯片103与第二功能芯片102可以具有不同类型的功能,示例性地,第三功能芯片103与第二功能芯片102中的一者可以用于逻辑运算处理,而另一者则用于路由交换、感测识别外界信号和/或数据存储等。In addition, two adjacent third functional chips 103 can communicate through the second functional chip 102, and the third functional chip 103 can also communicate with the first functional chip 101 through the second functional chip 102. In this way, the chip system 10 has good functional scalability, and the failure of any one chip will not affect the entire chip system 10, and the fault tolerance rate is high. It can be understood that the third functional chip 103 can also be connected to the second functional chip 102 through other means, such as leads, micro-bumps, etc. The third functional chip 103 and the second functional chip 102 may have different types of functions. For example, one of the third functional chip 103 and the second functional chip 102 may be used for logical operation processing, while the other may be used for logical operation processing. Used in routing and switching, sensing and identifying external signals and/or data storage, etc.
在一些实施例中,如图5所示,所述第三功能芯片103在所述第一基板100上的投影与所述第一功能芯片101在所述第一基板100上的投影重叠;In some embodiments, as shown in Figure 5, the projection of the third functional chip 103 on the first substrate 100 overlaps with the projection of the first functional chip 101 on the first substrate 100;
所述第三功能芯片103与所述第一功能芯片101之间具有第二互连结构112。There is a second interconnection structure 112 between the third functional chip 103 and the first functional chip 101 .
在本公开实施例中,在垂直于第一基板100表面的方向上,第三功能芯片103与第一功能芯片101的投影重叠,如此,可以节省芯片系统10在水平方向上的占用面积。第二互连结构112可以位于第三功能芯片103和第一功能芯片101的投影区域中除第二功能芯片102以外的部分。第二互连结构112可以为金属、掺杂半导体等导电材料,且第二互连结构112的长度可以大于或等于第二功能芯片102的厚度。示例性地,第二互连结构112可以为TMV、TDV、引线等。第二互连结构112可以垂直于第一基板100的表面,也可以为弯曲、倾斜等非垂直结构,可以理解的是,第二互连结构112的长度越短,其信号传输速度越快。在一些实施例中,第三功能芯片103与第一功能芯片101之间还填充有绝缘材料,以隔离多个第二互连结构112。这里的绝缘材料可以介电有机聚合物,例如环氧树脂等。In the embodiment of the present disclosure, in the direction perpendicular to the surface of the first substrate 100, the projections of the third functional chip 103 and the first functional chip 101 overlap. In this way, the area occupied by the chip system 10 in the horizontal direction can be saved. The second interconnection structure 112 may be located in a portion of the projection area of the third functional chip 103 and the first functional chip 101 except for the second functional chip 102 . The second interconnection structure 112 may be made of conductive material such as metal or doped semiconductor, and the length of the second interconnection structure 112 may be greater than or equal to the thickness of the second functional chip 102 . For example, the second interconnection structure 112 may be a TMV, a TDV, a lead, or the like. The second interconnection structure 112 may be perpendicular to the surface of the first substrate 100, or may be a non-vertical structure such as curved or inclined. It can be understood that the shorter the length of the second interconnection structure 112, the faster the signal transmission speed. In some embodiments, insulating material is also filled between the third functional chip 103 and the first functional chip 101 to isolate the plurality of second interconnect structures 112 . The insulating material here can be dielectric organic polymers, such as epoxy resin, etc.
在一些实施例中,还可以在垂直方向上重复第一功能芯片101、第二功能芯片102和第三功能芯片103的堆叠及连接方式,使得芯片系统10具有更多的芯片层数,进一步提高芯片系统10的集成度和扩展性。In some embodiments, the stacking and connection method of the first functional chip 101 , the second functional chip 102 and the third functional chip 103 can also be repeated in the vertical direction, so that the chip system 10 has more chip layers, further improving the Integration and scalability of the chip system 10.
在一些实施例中,如图6所示,所述芯片系统10还包括:In some embodiments, as shown in Figure 6, the chip system 10 further includes:
位于所述第二功能芯片102上,且阵列排布的多个第三功能芯片103;A plurality of third functional chips 103 located on the second functional chip 102 and arranged in an array;
其中,所述第三功能芯片103与所述第二功能芯片102具有不同类型的功能;每个所述第三功能芯片103在所述第一基板100上的投影分别与至少两个所述第二功能芯片102在所述第一基板100上的投影至少部分重叠;所述第三功能芯片103与至少两个所述第二功能芯片102在重叠的区域内键合连接;Wherein, the third functional chip 103 and the second functional chip 102 have different types of functions; the projection of each third functional chip 103 on the first substrate 100 is different from that of at least two of the third functional chips 103 and 102 respectively. The projections of the two functional chips 102 on the first substrate 100 at least partially overlap; the third functional chip 103 and at least two second functional chips 102 are bonded and connected in the overlapping area;
键合连接的所述第三功能芯片103与所述第二功能芯片102之间具有多路连接通道110;所述多路连接通道110被配置为使所述第三功能芯片103与至少两个所述第二功能芯片102之间具有信号通信。There is a multi-channel connection channel 110 between the bonded third functional chip 103 and the second functional chip 102; the multi-channel connection channel 110 is configured to connect the third functional chip 103 with at least two There is signal communication between the second functional chips 102 .
在本公开实施例中,在第二功能芯片102远离第一基板100一侧的表面上,还可以具有多个呈阵列排布的第三功能芯片103。第三功能芯片103与其下方的至少两个第二功能芯片102之间具有重叠区域,且第三功能芯片103与两个第二功能芯片102在重叠区域内键合连接,并形成有多路连接通道110。第三功能芯片103与第二功能芯片102之间可以通过多路连接通道110实现双向的信号通信。可以理解的是,由于第三功能芯片103堆叠在至少两个第二功能芯片102上,而第二功能芯片102则堆叠在至少两个第 一功能芯片101上,如此形成芯片数量从下至上逐层减少的芯片系统10,结构稳定性较好,同时也具备较强的功能拓展性和较高的容错率。In the embodiment of the present disclosure, there may also be a plurality of third functional chips 103 arranged in an array on the surface of the second functional chip 102 away from the first substrate 100 . There is an overlapping area between the third functional chip 103 and at least two second functional chips 102 below it, and the third functional chip 103 and the two second functional chips 102 are bonded and connected in the overlapping area to form a multi-way connection. Channel 110. Bidirectional signal communication can be achieved between the third functional chip 103 and the second functional chip 102 through the multi-channel connection channel 110 . It can be understood that since the third functional chip 103 is stacked on at least two second functional chips 102, and the second functional chip 102 is stacked on at least two first functional chips 101, the number of chips is gradually increased from bottom to top. The chip system 10 with reduced layers has better structural stability, stronger functional scalability and higher fault tolerance rate.
第三功能芯片103可以为裸片,在一些实施例中,第三功能芯片103可以为已知良好芯片,以提高芯片系统10的可靠性。第三功能芯片103的类型包括但不限于FPGA中的CLB、GPU中的SM等。示例性地,可以通过混合键合工艺,在重叠区域内将第三功能芯片103键合连接至少两个第二功能芯片102,并形成多路连接通道110。混合键合形成的多路连接通道110可以提高芯片系统10集成度,并增加信号传输的速度和带宽。The third functional chip 103 may be a bare chip. In some embodiments, the third functional chip 103 may be a known good chip to improve the reliability of the chip system 10 . The types of the third functional chip 103 include but are not limited to CLB in FPGA, SM in GPU, etc. For example, the third functional chip 103 can be bonded to at least two second functional chips 102 in the overlapping area through a hybrid bonding process, and a multi-way connection channel 110 can be formed. The multiple connection channels 110 formed by hybrid bonding can improve the integration level of the chip system 10 and increase the speed and bandwidth of signal transmission.
在一些实施例中,如图7至图13所示,所述芯片系统10还包括:In some embodiments, as shown in Figures 7 to 13, the chip system 10 further includes:
多个输入输出芯片104;Multiple input and output chips 104;
任意一个所述输入输出芯片104至少与一个所述第一功能芯片101或所述第二功能芯片102连接。Any one of the input and output chips 104 is connected to at least one of the first functional chip 101 or the second functional chip 102 .
在本公开实施例中,芯片系统10中还可以具有多个输入输出芯片104,输入输出芯片104用于将芯片系统10中的多个芯片电性连接至其他外界系统,其中,任一输入输出芯片104与至少一个第一功能芯片101或第二功能芯片102连接。输入输出芯片104可以为FPGA中的输入输出功能块、GPU中的输入输出接口及其他外围电路等。输入输出芯片104可以通过混合键合、引线、微凸块等方式连接芯片系统10中的多个芯片以及第一基板100,以实现芯片系统10与外界系统的通信交互。In the embodiment of the present disclosure, the chip system 10 may also have multiple input and output chips 104. The input and output chips 104 are used to electrically connect the multiple chips in the chip system 10 to other external systems, where any input and output The chip 104 is connected to at least one first functional chip 101 or a second functional chip 102 . The input/output chip 104 can be an input/output function block in an FPGA, an input/output interface in a GPU, and other peripheral circuits. The input/output chip 104 can connect multiple chips in the chip system 10 and the first substrate 100 through hybrid bonding, wires, micro-bumps, etc., to realize communication interaction between the chip system 10 and external systems.
在一些实施例中,如图7和图8所示,所述输入输出芯片104位于所述第一基板100的边缘;所述阵列排布的多个第一功能芯片101中靠近第一基板100边缘的所述第一功能芯片101与所述输入输出芯片104通过所述第一基板100连接。In some embodiments, as shown in Figures 7 and 8, the input/output chip 104 is located at the edge of the first substrate 100; among the plurality of first functional chips 101 arranged in the array, it is close to the first substrate 100 The first functional chip 101 on the edge and the input/output chip 104 are connected through the first substrate 100 .
在本公开实施例中,如图7所示,多个输入输出芯片104位于第一基板100的边缘,多个输入输出芯片104可以围绕阵列排布的多个第一功能芯片101设置。示例性地,如图8所示为图7中AA截面的示意图,输入输出芯片104可以通过第一基板100内的布线与靠近第一基板100边缘的第一功能芯片101连接。可以理解的是,将输入输出芯片104设置于第一基板100的边缘有利于简化芯片系统10的布局结构,制造工艺比较简单。In the embodiment of the present disclosure, as shown in FIG. 7 , a plurality of input and output chips 104 are located at the edge of the first substrate 100 , and the plurality of input and output chips 104 can be arranged around a plurality of first functional chips 101 arranged in an array. For example, as shown in FIG. 8 , which is a schematic diagram of the AA cross-section in FIG. 7 , the input/output chip 104 can be connected to the first functional chip 101 near the edge of the first substrate 100 through wiring in the first substrate 100 . It can be understood that arranging the input/output chip 104 at the edge of the first substrate 100 is beneficial to simplifying the layout structure of the chip system 10 and the manufacturing process is relatively simple.
在一些实施例中,如图9和图10所示,所述输入输出芯片104位于任意两个相邻的所述第一功能芯片101之间的空隙内,且所述输入输出芯片104位于所述第二功能芯片102的覆盖范围内;In some embodiments, as shown in FIGS. 9 and 10 , the input-output chip 104 is located in the gap between any two adjacent first functional chips 101 , and the input-output chip 104 is located in the gap between any two adjacent first functional chips 101 . Within the coverage of the second functional chip 102;
所述输入输出芯片104与所述第二功能芯片102键合连接,且所述输入输出芯片104还与所述第一基板100键合连接。The input/output chip 104 is bonded and connected to the second functional chip 102 , and the input/output chip 104 is also bonded and connected to the first substrate 100 .
在本公开实施例中,如图9所示,任意两个相邻的第一功能芯片101之间的空隙中还具有输入输出芯片104,在垂直于第一基板100表面的方向上,输入输出芯片104还可以在第二功能芯片102的覆盖范围内,从而使得输入输出芯片104在芯片系统10中不占用额外的面积,以提高集成度。如图10所示为图9中AA截面的示意图,输入输出芯片104的上表面可以与第二功能芯片102键合连接,输入输出芯片104的下表面则可以与第一基板100键合连接。可以理解的是,输入输出芯片104与第二功能芯片102及第一基板100的连接方式包括但不限于混合键合、引线、微凸块等。在一些实施例中, 根据芯片系统10的布局需要,输入输出芯片104还可以超出第二功能芯片102的覆盖范围。In the embodiment of the present disclosure, as shown in FIG. 9 , there is also an input/output chip 104 in the gap between any two adjacent first functional chips 101. In the direction perpendicular to the surface of the first substrate 100, the input/output chip 104 is provided. The chip 104 can also be within the coverage of the second functional chip 102, so that the input and output chips 104 do not occupy additional area in the chip system 10 to improve integration. As shown in FIG. 10 , which is a schematic diagram of the AA cross-section in FIG. 9 , the upper surface of the input/output chip 104 can be bonded to the second functional chip 102 , and the lower surface of the input/output chip 104 can be bonded to the first substrate 100 . It can be understood that the connection method between the input and output chip 104, the second functional chip 102 and the first substrate 100 includes but is not limited to hybrid bonding, wires, micro-bumps, etc. In some embodiments, according to the layout requirements of the chip system 10, the input and output chips 104 may also exceed the coverage of the second functional chip 102.
在一些实施例中,如图11和图12所示,所述输入输出芯片104位于所述第一功能芯片101上所述第二功能芯片102的相邻位置;In some embodiments, as shown in Figures 11 and 12, the input-output chip 104 is located adjacent to the second functional chip 102 on the first functional chip 101;
所述输入输出芯片104在所述第一基板100上的投影分别与两个相邻的所述第一功能芯片101重叠,且所述输入输出芯片104与所述第一功能芯片101在重叠的区域内键合连接。The projection of the input/output chip 104 on the first substrate 100 overlaps with the two adjacent first functional chips 101 respectively, and the input/output chip 104 and the first functional chip 101 are in the overlapping position. Intra-area bonding connections.
在本公开实施例中,如图11所示,输入输出芯片104与第二功能芯片102位于同一层内,且输入输出芯片104位于任一第二功能芯片102的相邻位置,示例性地,输入输出芯片104可以位于两个相邻的第二功能芯片102之间。输入输出芯片104还可以横跨位于其下方的两个第一功能芯片101,即输入输出芯片104在第一基板100上的投影分别与两个相邻的第一功能芯片101重叠,且输入输出芯片104与第一功能芯片101在重叠的区域内键合连接。如此,一方面,输入输出芯片104在芯片系统10中不占用额外的面积;另一方面,输入输出芯片104也可以起到中介层的作用,以增加相邻两个第一功能芯片101之间信号传输的带宽,并在第二功能芯片102失效时,确保相邻两个第一功能芯片101之间的信号传输不受影响,提高芯片系统10的容错率。可以理解的是,输入输出芯片104与第一功能芯片101的连接方式包括但不限于混合键合、引线、微凸块等。In the embodiment of the present disclosure, as shown in Figure 11, the input/output chip 104 and the second functional chip 102 are located in the same layer, and the input/output chip 104 is located adjacent to any second functional chip 102. For example, The input-output chip 104 may be located between two adjacent second function chips 102 . The input-output chip 104 can also span the two first functional chips 101 located below it, that is, the projection of the input-output chip 104 on the first substrate 100 overlaps with the two adjacent first functional chips 101 respectively, and the input-output chip 104 overlaps with the two adjacent first functional chips 101 respectively. The chip 104 and the first functional chip 101 are bonded and connected in an overlapping area. In this way, on the one hand, the input/output chip 104 does not occupy additional area in the chip system 10; on the other hand, the input/output chip 104 can also play the role of an intermediary layer to increase the space between two adjacent first functional chips 101. The signal transmission bandwidth ensures that the signal transmission between two adjacent first functional chips 101 is not affected when the second functional chip 102 fails, thereby improving the fault tolerance rate of the chip system 10 . It can be understood that the connection method between the input and output chip 104 and the first functional chip 101 includes but is not limited to hybrid bonding, wires, micro-bumps, etc.
在一些实施例中,如图12所示为图11中AA截面的示意图,输入输出芯片104还可以通过位于其下方相邻两个第一功能芯片101的间隙内的第三互连结构113连接至第一基板100。第三互连结构113可以为金属、掺杂半导体等导电材料,且第三互连结构113的长度可以大于或等于第一功能芯片101的厚度。示例性地,第三互连结构113可以为TMV、TDV、引线等。第三互连结构113可以垂直于第一基板100的表面,也可以为弯曲、倾斜等非垂直结构,可以理解的是,第三互连结构113的长度越短,其信号传输速度越快。In some embodiments, as shown in FIG. 12 , which is a schematic diagram of the AA cross-section in FIG. 11 , the input and output chips 104 can also be connected through the third interconnection structure 113 located in the gap between the two adjacent first functional chips 101 below it. to the first substrate 100 . The third interconnection structure 113 may be made of conductive material such as metal or doped semiconductor, and the length of the third interconnection structure 113 may be greater than or equal to the thickness of the first functional chip 101 . For example, the third interconnection structure 113 may be a TMV, a TDV, a lead, or the like. The third interconnection structure 113 may be perpendicular to the surface of the first substrate 100, or may be a non-vertical structure such as curved or inclined. It can be understood that the shorter the length of the third interconnection structure 113, the faster the signal transmission speed.
在一些实施例中,至少部分第一功能芯片101还可以具有输入输出功能和转接功能,且第一功能芯片101可以通过第一基板100中如穿硅通孔(Through Silicon Via,TSV)、TMV等互连结构,将芯片系统10中的多个芯片从第一基板100的背面引出,从而与外界系统进行通信。可以理解的是,这里的第一基板100的背面指的是第一基板100远离第一功能芯片101一侧的表面。In some embodiments, at least part of the first functional chip 101 may also have an input/output function and a switching function, and the first functional chip 101 may pass through the first substrate 100 through a through silicon via (TSV), Interconnect structures such as TMV lead multiple chips in the chip system 10 from the back of the first substrate 100 to communicate with external systems. It can be understood that the back side of the first substrate 100 here refers to the surface of the first substrate 100 away from the first functional chip 101 .
在一些实施例中,如图13所示,所述芯片系统10还包括:In some embodiments, as shown in Figure 13, the chip system 10 further includes:
第二基板200,覆盖于所述第二功能芯片102和所述输入输出芯片104上;The second substrate 200 covers the second functional chip 102 and the input/output chip 104;
所述第二基板200与所述输入输出芯片104键合连接,且所述输入输出芯片104与所述第二基板200之间具有输入输出通道114;The second substrate 200 is bonded and connected to the input/output chip 104, and there is an input/output channel 114 between the input/output chip 104 and the second substrate 200;
所述第二基板200内具有重布线层(Redistribution Layer,RDL)201;所述重布线层201中具有连接所述输入输出芯片104与所述第二基板200表面的信号通道210。The second substrate 200 has a redistribution layer (RDL) 201; the redistribution layer 201 has a signal channel 210 connecting the input/output chip 104 and the surface of the second substrate 200.
在本公开实施例中,如图13所示,第二基板200覆盖于第二功能芯片102和输入输出芯片104之上,且第二基板200可以与输入输出芯片104键合连接,并形成有输入 输出通道114。可以理解的是,为了方便示意,在图13中第二基板200位于第二功能芯片102和输入输出芯片104下方。如此,芯片系统10中的多个芯片可以经由输入输出芯片104以及第二基板200,电性连接至其他外界系统,且第二基板200还可以增加芯片系统10的结构稳定性。可以理解的是,输入输出通道114包括但不限于混合键合、引线、微凸块等。In the embodiment of the present disclosure, as shown in FIG. 13 , the second substrate 200 covers the second functional chip 102 and the input/output chip 104 , and the second substrate 200 can be bonded and connected to the input/output chip 104 and formed with Input and output channel 114. It can be understood that, for convenience of illustration, the second substrate 200 is located below the second functional chip 102 and the input/output chip 104 in FIG. 13 . In this way, multiple chips in the chip system 10 can be electrically connected to other external systems via the input/output chip 104 and the second substrate 200 , and the second substrate 200 can also increase the structural stability of the chip system 10 . It can be understood that the input and output channels 114 include, but are not limited to, hybrid bonding, wires, micro-bumps, etc.
第二基板200内可以具有重布线层201,重布线层201可以增加芯片系统10中管脚、凸点等结构的布局灵活性,以简化线路设计。重布线层201中具有连接输入输出芯片104与第二基板200中远离第一基板100一侧表面的信号通道210,这里的信号通道210可以为沉积工艺形成的金属线。示例性地,信号通道210可以连接输入输出通道114与第二基板200另一侧表面上的球状引脚栅格阵列(Ball Grid Array,BGA)。The second substrate 200 may have a rewiring layer 201 . The rewiring layer 201 may increase the layout flexibility of pins, bumps and other structures in the chip system 10 to simplify circuit design. The redistribution layer 201 has a signal channel 210 that connects the input/output chip 104 and the surface on the side of the second substrate 200 away from the first substrate 100. The signal channel 210 here may be a metal line formed by a deposition process. For example, the signal channel 210 may connect the input and output channel 114 to a ball grid array (Ball Grid Array, BGA) on the other side surface of the second substrate 200 .
在一些实施例中,如图14至图16所示,所述芯片系统10还包括:In some embodiments, as shown in Figures 14 to 16, the chip system 10 further includes:
散热结构300,覆盖所述第一功能芯片101和所述第二功能芯片102;The heat dissipation structure 300 covers the first functional chip 101 and the second functional chip 102;
其中,所述散热结构300在覆盖所述第一功能芯片101表面的区域内与所述第一功能芯片101表面接触;所述散热结构300覆盖所述第二功能芯片102表面的区域与所述第二功能芯片102表面接触;所述散热结构300覆盖所述第一功能芯片101之间裸露的所述第一基板100的区域内与所述第一基板100接触。Wherein, the heat dissipation structure 300 is in contact with the surface of the first functional chip 101 in an area covering the surface of the first functional chip 101; the heat dissipation structure 300 is in contact with the surface of the second functional chip 102 in an area covering the surface of the second functional chip 102. The second functional chips 102 are in surface contact; the heat dissipation structure 300 covers the exposed area of the first substrate 100 between the first functional chips 101 and is in contact with the first substrate 100 .
在本公开实施例中,图14为具有散热结构300的芯片系统10的俯视图,图15和图16分别为图14中AA截面和BB截面的示意图。In the embodiment of the present disclosure, FIG. 14 is a top view of the chip system 10 with the heat dissipation structure 300, and FIG. 15 and FIG. 16 are schematic diagrams of the AA cross-section and the BB cross-section in FIG. 14, respectively.
散热结构300覆盖于第一功能芯片101和第二功能芯片102之上。散热结构300可以为铜、氮化铝、金刚石复合材料等具有较高热导率和较低热膨胀系数的材料。散热结构300分别与第一功能芯片101和第二功能芯片102的表面接触,且散热结构300还可以通过多个第一功能芯片101之间的间隙与第一基板100接触,以提高芯片系统10的散热效率。在一些实施例中,散热结构300可以为热沉(Heat Sink)。The heat dissipation structure 300 covers the first functional chip 101 and the second functional chip 102 . The heat dissipation structure 300 can be made of copper, aluminum nitride, diamond composite materials, or other materials with higher thermal conductivity and lower thermal expansion coefficient. The heat dissipation structure 300 is in contact with the surfaces of the first functional chip 101 and the second functional chip 102 respectively, and the heat dissipation structure 300 can also be in contact with the first substrate 100 through the gaps between the plurality of first functional chips 101 to improve the chip system 10 heat dissipation efficiency. In some embodiments, the heat dissipation structure 300 may be a heat sink.
在一些实施例中,如图15和图16所示,所述散热结构300包括多个凸起结构310;In some embodiments, as shown in Figures 15 and 16, the heat dissipation structure 300 includes a plurality of protruding structures 310;
位于覆盖所述第一功能芯片101的区域内的所述凸起结构310,向所述第一功能芯片101表面延伸并接触所述第一功能芯片101;The protruding structure 310 located in the area covering the first functional chip 101 extends toward the surface of the first functional chip 101 and contacts the first functional chip 101;
位于覆盖所述第一功能芯片101之间裸露的所述第一基板100的区域内的所述凸起结构310,向所述第一基板100延伸并接触所述第一基板100。The protruding structure 310 located in the area covering the exposed first substrate 100 between the first functional chips 101 extends toward the first substrate 100 and contacts the first substrate 100 .
在本公开实施例中,散热结构300包括多个凸起结构310,凸起结构310包括但不限于梳状或点阵状。如图15所示,位于覆盖第一功能芯片101且不覆盖第二功能芯片102区域内的凸起结构310可以向下延伸,并接触第一功能芯片101的表面;如图16所示,位于多个第一功能芯片101之间的间隙上方的凸起结构310可以向下延伸,并接触第一基板100的表面。如此,散热结构300可以与芯片系统10中的各个芯片及基板等进行接触,以提高散热效率。In the embodiment of the present disclosure, the heat dissipation structure 300 includes a plurality of protruding structures 310, and the protruding structures 310 include but are not limited to comb-shaped or lattice-shaped. As shown in Figure 15, the protruding structure 310 located in the area covering the first functional chip 101 and not covering the second functional chip 102 can extend downward and contact the surface of the first functional chip 101; as shown in Figure 16, located in the area that does not cover the second functional chip 102 The protruding structures 310 above the gaps between the plurality of first functional chips 101 may extend downward and contact the surface of the first substrate 100 . In this way, the heat dissipation structure 300 can be in contact with various chips and substrates in the chip system 10 to improve heat dissipation efficiency.
如图17所示,本公开实施例还提供了一种芯片系统40,包括:As shown in Figure 17, an embodiment of the present disclosure also provides a chip system 40, including:
第一基板400; first substrate 400;
位于所述第一基板400上阵列排布的多个第一功能芯片401;以及A plurality of first functional chips 401 arranged in an array on the first substrate 400; and
位于所述第一功能芯片401表面上的多个第二功能芯片402;A plurality of second functional chips 402 located on the surface of the first functional chip 401;
位于所述第一基板400边缘的多个输入输出芯片404;A plurality of input and output chips 404 located at the edge of the first substrate 400;
其中,每个所述第二功能芯片402在所述第一基板400上的投影分别与至少两个所述第一功能芯片401在所述第一基板400上的投影至少部分重叠;所述第二功能芯片402与至少两个所述第一功能芯片401在重叠的区域内键合连接;键合连接的所述第一功能芯片401与所述第二功能芯片402之间具有多路连接通道;Wherein, the projection of each second functional chip 402 on the first substrate 400 at least partially overlaps with the projection of at least two first functional chips 401 on the first substrate 400; The two-function chip 402 and at least two first functional chips 401 are bonded and connected in an overlapping area; there are multiple connection channels between the bonded-connected first functional chip 401 and the second functional chip 402 ;
所述第二功能芯片402中还包括核心模块4021与互连模块4022;其中,互连模块4022位于第二功能芯片402中与第一功能芯片401投影重合的区域;核心模块4021位于第二功能芯片402中除互连模块4022之外的中央区域;The second functional chip 402 also includes a core module 4021 and an interconnection module 4022; wherein the interconnection module 4022 is located in the area of the second functional chip 402 that overlaps with the projection of the first functional chip 401; the core module 4021 is located in the second functional chip 402. The central area of chip 402 excluding interconnect module 4022;
所述阵列排布的多个第一功能芯片401中靠近第一基板400边缘的所述第一功能芯片401与所述输入输出芯片404通过所述第一基板400连接。Among the plurality of first functional chips 401 arranged in the array, the first functional chip 401 close to the edge of the first substrate 400 is connected to the input/output chip 404 through the first substrate 400 .
在本公开实施例中,芯片系统40可以为适用于并行计算的片上网络(Network On Chip,NOC)等架构。其中,可以通过混合键合工艺,在重叠区域内将第二功能芯片402键合连接至少两个第一功能芯片401,并形成多路连接通道。混合键合工艺所形成的多路连接通道具有良好的传输稳定性和信号完整性,且多路连接通道的间距较小,单位面积上多路连接通道的数量较多,各芯片之间的距离较短,从而在提高芯片系统40集成度的同时,增加了信号传输的速度和带宽。此外,第二功能芯片402还可以起到中介层的作用,使得芯片系统40形成网状的互连结构,并具有良好的容错性和功能拓展性。In the embodiment of the present disclosure, the chip system 40 may be a network on chip (NOC) or other architecture suitable for parallel computing. Among them, the second functional chip 402 can be bonded to at least two first functional chips 401 in the overlapping area through a hybrid bonding process, and multiple connection channels can be formed. The multiple connection channels formed by the hybrid bonding process have good transmission stability and signal integrity, and the spacing between the multiple connection channels is small. The number of multiple connection channels per unit area is large, and the distance between the chips is Shorter, thereby increasing the integration level of the chip system 40 while increasing the speed and bandwidth of signal transmission. In addition, the second functional chip 402 can also function as an intermediary layer, allowing the chip system 40 to form a mesh-like interconnection structure and have good fault tolerance and function expandability.
在一些实施例中,芯片系统40可以为FPGA,其中,第一功能芯片401可以为FPGA中的CLB;第二功能芯片402中的核心模块4021可以为FPGA中的SB,第二功能芯片402中的互连模块4022可以为FPGA中的CB;而输入输出芯片404则可以为FPGA中的IOB。In some embodiments, the chip system 40 may be an FPGA, in which the first functional chip 401 may be a CLB in the FPGA; the core module 4021 in the second functional chip 402 may be an SB in the FPGA, and the second functional chip 402 may be an SB in the FPGA. The interconnection module 4022 may be a CB in the FPGA; and the input and output chip 404 may be an IOB in the FPGA.
在本公开实施例中,芯片系统40为FPGA,FPGA中包括多个CLB,CLB由查找表(Look Up Table,LUT)和寄存器(Register)组成,查找表用于实现组合逻辑功能。FPGA内部的寄存器可配置为具有同步/异步复位和置位、时钟使能的触发器,也可以配置成为锁存器。一个CLB可以由一个查找表和一个寄存器组成,也可以是其他数量的组合方式。CLB可以为位于芯片系统40底部的第一功能芯片401。而FPGA中SB和CB则分别位于第二功能芯片402中的核心模块4021和互连模块4022中,每个第二功能芯片中的一个SB可以通过四个CB,分别连接至下方的四个第一功能芯片401,即CLB。如此,通过SB和CB,可以实现多个CLB之间的通信,并且可以通过选择最佳信号传输路径,以减少通信延迟。此外,单个CLB的失效不会影响整个FPGA系统,增加了FPGA的容错率。FPGA中的IOB可以设置于输入输出芯片404上,从而使得FPGA通过IOB与外界系统进行通信。In the embodiment of the present disclosure, the chip system 40 is an FPGA. The FPGA includes multiple CLBs. The CLBs are composed of a look-up table (LUT) and a register (Register). The look-up table is used to implement combinational logic functions. The registers inside the FPGA can be configured as flip-flops with synchronous/asynchronous reset and set, clock enable, or as latches. A CLB can consist of a lookup table and a register, or any other number of combinations. The CLB may be the first functional chip 401 located at the bottom of the chip system 40 . In FPGA, SB and CB are respectively located in the core module 4021 and interconnection module 4022 in the second functional chip 402. One SB in each second functional chip can be connected to the four lower ones through four CBs. One functional chip 401, namely CLB. In this way, through SB and CB, communication between multiple CLBs can be achieved, and the optimal signal transmission path can be selected to reduce communication delays. In addition, the failure of a single CLB will not affect the entire FPGA system, increasing the fault tolerance rate of the FPGA. The IOB in the FPGA can be set on the input and output chip 404, so that the FPGA communicates with the external system through the IOB.
在一些实施例中,芯片系统40可以为GPU,其中,第一功能芯片401可以为GPU中的SM;第二功能芯片402中的核心模块4021可以为GPU中的显存芯片,第二功能芯片402中的互连模块4022可以为GPU中的显存控制器;而输入输出芯片404则可以为GPU中的I/O及其他外围电路。In some embodiments, the chip system 40 may be a GPU, where the first functional chip 401 may be an SM in the GPU; the core module 4021 in the second functional chip 402 may be a video memory chip in the GPU, and the second functional chip 402 The interconnection module 4022 in can be the video memory controller in the GPU; and the input and output chip 404 can be the I/O and other peripheral circuits in the GPU.
在本公开实施例中,芯片系统40为GPU,GPU中包括多个SM,SM可以是单指 令多线程架构的处理器,主要用于进行运算操作,SM可以为位于芯片系统40底部的第一功能芯片401。而GPU中的显存芯片和显存控制器则分别位于第二功能芯片402中的核心模块4021和互连模块4022中,每个第二功能芯片402中的一个显存芯片可以通过四个显存控制器,分别连接至下方的四个第一功能芯片401,即SM。在一些实施例中,SM中还包括一级缓存和寄存器,而SM与显存控制器之间还连接有二级缓存,寄存器可以依次经由一级缓存和二级缓存,连接至显存控制器。这里的一级缓存可以设置在第一功能芯片401中,而二级缓存则可以设置在第二功能芯片402中;或者还可以在第一功能芯片401与第二功能芯片402之间再额外设置一层芯片层,以作为二级缓存。此外,GPU中的I/O及其他外围电路可以设置于输入输出芯片404上,从而使得GPU通过I/O与外界系统进行通信。需要说明的是,本公开所提供的几个方法或设备实施例中所揭露的特征,在不冲突的情况下可以任意组合,得到新的方法实施例或设备实施例。In the embodiment of the present disclosure, the chip system 40 is a GPU, and the GPU includes multiple SMs. The SM can be a processor with a single-instruction multi-thread architecture and is mainly used to perform computing operations. The SM can be the first processor located at the bottom of the chip system 40 Function chip 401. The video memory chip and video memory controller in the GPU are respectively located in the core module 4021 and the interconnection module 4022 in the second function chip 402. Each video memory chip in the second function chip 402 can pass four video memory controllers. They are respectively connected to the four first function chips 401 below, namely SM. In some embodiments, the SM also includes a first-level cache and a register, and a second-level cache is also connected between the SM and the video memory controller. The registers can be connected to the video memory controller via the first-level cache and the second-level cache in turn. The first-level cache here can be set in the first functional chip 401, and the second-level cache can be set in the second functional chip 402; or it can be additionally set between the first functional chip 401 and the second functional chip 402. A layer of chips to serve as a secondary cache. In addition, I/O and other peripheral circuits in the GPU can be provided on the input and output chip 404, so that the GPU communicates with external systems through I/O. It should be noted that the features disclosed in several method or device embodiments provided in this disclosure can be combined arbitrarily without conflict to obtain new method embodiments or device embodiments.
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所述权利要求的保护范围为准。The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure. should be covered by the protection scope of this disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.
工业实用性Industrial applicability
本公开实施例提供了一种芯片系统。在本公开实施例提供的芯片系统中,第二功能芯片位于阵列排布的第一功能芯片上,且第二功能芯片在第一基板上的投影分别与至少两个第一功能芯片在第一基板上的投影至少部分重叠,第二功能芯片与至少两个第一功能芯片在重叠的区域内键合连接并具有多路连接通道。如此,一方面,错位堆叠设置的第一功能芯片与第二功能芯片减小了芯片系统的体积;另一方面,多个第一功能芯片之间可以通过第二功能芯片进行互连,提高了芯片系统的扩展性,且单个芯片失效不会影响整个芯片系统,容错率较高。Embodiments of the present disclosure provide a chip system. In the chip system provided by the embodiment of the present disclosure, the second functional chip is located on the first functional chip arranged in an array, and the projection of the second functional chip on the first substrate is respectively the same as that of at least two first functional chips on the first substrate. The projections on the substrate at least partially overlap, and the second functional chip and at least two first functional chips are bonded and connected in the overlapping area and have multiple connection channels. In this way, on the one hand, the first functional chip and the second functional chip arranged in a staggered stack reduce the size of the chip system; on the other hand, multiple first functional chips can be interconnected through the second functional chip, which improves the efficiency of the chip system. The chip system is scalable, and the failure of a single chip will not affect the entire chip system, and the fault tolerance rate is high.

Claims (16)

  1. 一种芯片系统,包括:A chip system including:
    第一基板;first substrate;
    位于所述第一基板上阵列排布的多个第一功能芯片;以及A plurality of first functional chips arranged in an array on the first substrate; and
    位于所述第一功能芯片表面上的多个第二功能芯片;a plurality of second functional chips located on the surface of the first functional chip;
    其中,所述第一功能芯片与所述第二功能芯片具有不同类型的功能;每个所述第二功能芯片在所述第一基板上的投影分别与至少两个所述第一功能芯片在所述第一基板上的投影至少部分重叠;所述第二功能芯片与至少两个所述第一功能芯片在重叠的区域内键合连接;Wherein, the first functional chip and the second functional chip have different types of functions; the projection of each second functional chip on the first substrate is respectively different from that of at least two first functional chips. The projections on the first substrate at least partially overlap; the second functional chip and at least two of the first functional chips are bonded and connected in the overlapping area;
    键合连接的所述第一功能芯片与所述第二功能芯片之间具有多路连接通道;所述多路连接通道被配置为使所述第二功能芯片与至少两个所述第一功能芯片之间具有信号通信;互相间隔的多个第一功能芯片能够通过多个第二功能芯片相互通信。There are multiple connection channels between the first functional chip and the second functional chip that are bonded together; the multiple connection channels are configured to connect the second functional chip with at least two of the first functional chips. There is signal communication between the chips; multiple first functional chips spaced apart from each other can communicate with each other through multiple second functional chips.
  2. 根据权利要求1所述的芯片系统,其中,任意四个两两相邻的所述第一功能芯片与同一个所述第二功能芯片连接。The chip system according to claim 1, wherein any four adjacent first functional chips are connected to the same second functional chip.
  3. 根据权利要求1所述的芯片系统,其中,所述第一功能芯片包括功能模块;The chip system according to claim 1, wherein the first functional chip includes a functional module;
    所述第二功能芯片包括至少一个核心模块和多个互连模块;所述互连模块位于所述第二功能芯片中与所述第一功能芯片重叠的区域,所述核心模块位于所述第二功能芯片中除所述互连模块以外的区域。The second functional chip includes at least one core module and a plurality of interconnection modules; the interconnection module is located in an area of the second functional chip that overlaps the first functional chip, and the core module is located in the first functional chip. The area in the dual-function chip other than the interconnection module.
  4. 根据权利要求3所述的芯片系统,其中,所述功能模块包括处理器;所述核心模块包括存储器,所述互连模块包括存储控制器。The chip system of claim 3, wherein the functional module includes a processor; the core module includes a memory, and the interconnection module includes a memory controller.
  5. 根据权利要求3所述的芯片系统,其中,所述功能模块包括可编程逻辑单元;所述核心模块包括开关单元,所述互连模块包括连接单元。The chip system according to claim 3, wherein the functional module includes a programmable logic unit; the core module includes a switch unit, and the interconnection module includes a connection unit.
  6. 根据权利要求1所述的芯片系统,其中,相邻的所述第一功能芯片之间具有间隙;The chip system according to claim 1, wherein there is a gap between adjacent first functional chips;
    所述第二功能芯片在所述间隙所在区域内通过第一互连结构与所述第一基板连接。The second functional chip is connected to the first substrate through a first interconnection structure in the area where the gap is located.
  7. 根据权利要求1所述的芯片系统,还包括:The chip system according to claim 1, further comprising:
    位于所述第二功能芯片上,且阵列排布的多个第三功能芯片;A plurality of third functional chips located on the second functional chip and arranged in an array;
    其中,所述第三功能芯片与所述第二功能芯片具有不同类型的功能;每个所述第二功能芯片在所述第一基板上的投影分别与至少两个所述第三功能芯片在所述第一基板上的投影至少部分重叠;所述第二功能芯片与至少两个所述第三功能芯片在重叠的区域内键合连接;Wherein, the third functional chip and the second functional chip have different types of functions; the projection of each second functional chip on the first substrate is respectively different from that of at least two third functional chips. The projections on the first substrate at least partially overlap; the second functional chip and at least two third functional chips are bonded and connected in the overlapping area;
    键合连接的所述第三功能芯片与所述第二功能芯片之间具有多路连接通道;所述多路连接通道被配置为使所述第二功能芯片与至少两个所述第三功能芯片之间具有信号通信。There are multiple connection channels between the bonded third functional chip and the second functional chip; the multiple connection channels are configured to connect the second functional chip with at least two of the third functional chips. There is signal communication between chips.
  8. 根据权利要求7所述的芯片系统,其中,所述第三功能芯片在所述第一基板上的投影与所述第一功能芯片在所述第一基板上的投影重叠;The chip system according to claim 7, wherein the projection of the third functional chip on the first substrate overlaps with the projection of the first functional chip on the first substrate;
    所述第三功能芯片与所述第一功能芯片之间具有第二互连结构。There is a second interconnection structure between the third functional chip and the first functional chip.
  9. 根据权利要求1所述的芯片系统,还包括:The chip system according to claim 1, further comprising:
    位于所述第二功能芯片上,且阵列排布的多个第三功能芯片;A plurality of third functional chips located on the second functional chip and arranged in an array;
    其中,所述第三功能芯片与所述第二功能芯片具有不同类型的功能;每个所述第三功 能芯片在所述第一基板上的投影分别与至少两个所述第二功能芯片在所述第一基板上的投影至少部分重叠;所述第三功能芯片与至少两个所述第二功能芯片在重叠的区域内键合连接;Wherein, the third functional chip and the second functional chip have different types of functions; the projection of each third functional chip on the first substrate is respectively different from that of at least two second functional chips. The projections on the first substrate at least partially overlap; the third functional chip and at least two second functional chips are bonded and connected in the overlapping area;
    键合连接的所述第三功能芯片与所述第二功能芯片之间具有多路连接通道;所述多路连接通道被配置为使所述第三功能芯片与至少两个所述第二功能芯片之间具有信号通信。There are multiple connection channels between the bonded third functional chip and the second functional chip; the multiple connection channels are configured to connect the third functional chip with at least two of the second functional chips. There is signal communication between chips.
  10. 根据权利要求1所述的芯片系统,还包括:The chip system according to claim 1, further comprising:
    多个输入输出芯片;Multiple input and output chips;
    任意一个所述输入输出芯片至少与一个所述第一功能芯片或所述第二功能芯片连接。Any one of the input and output chips is connected to at least one of the first functional chip or the second functional chip.
  11. 根据权利要求10所述的芯片系统,其中,所述输入输出芯片位于所述第一基板的边缘;所述阵列排布的多个第一功能芯片中靠近第一基板边缘的所述第一功能芯片与所述输入输出芯片通过所述第一基板连接。The chip system according to claim 10, wherein the input/output chip is located at the edge of the first substrate; the first function chip close to the edge of the first substrate among the plurality of first functional chips arranged in the array The chip is connected to the input/output chip through the first substrate.
  12. 根据权利要求10所述的芯片系统,其中,所述输入输出芯片位于任意两个相邻的所述第一功能芯片之间的空隙内,且所述输入输出芯片位于所述第二功能芯片的覆盖范围内;The chip system according to claim 10, wherein the input/output chip is located in a gap between any two adjacent first functional chips, and the input/output chip is located between the second functional chip and the second functional chip. within coverage;
    所述输入输出芯片与所述第二功能芯片键合连接,且所述输入输出芯片还与所述第一基板键合连接。The input-output chip is bonded and connected to the second functional chip, and the input-output chip is also bonded and connected to the first substrate.
  13. 根据权利要求10所述的芯片系统,其中,所述输入输出芯片位于所述第一功能芯片上所述第二功能芯片的相邻位置;The chip system according to claim 10, wherein the input and output chip is located adjacent to the second functional chip on the first functional chip;
    所述输入输出芯片在所述第一基板上的投影分别与两个相邻的所述第一功能芯片重叠,且所述输入输出芯片与所述第一功能芯片在重叠的区域内键合连接。The projection of the input/output chip on the first substrate overlaps with two adjacent first functional chips respectively, and the input/output chip and the first functional chip are bonded and connected in the overlapping area. .
  14. 根据权利要求13所述的芯片系统,还包括:The chip system according to claim 13, further comprising:
    第二基板,覆盖于所述第二功能芯片和所述输入输出芯片上;a second substrate covering the second functional chip and the input/output chip;
    所述第二基板与所述输入输出芯片键合连接,且所述输入输出芯片与所述第二基板之间具有输入输出通道;The second substrate is bonded and connected to the input/output chip, and there is an input/output channel between the input/output chip and the second substrate;
    所述第二基板内具有重布线层;所述重布线层中具有连接所述输入输出芯片与所述第二基板表面的信号通道。The second substrate has a rewiring layer; the rewiring layer has a signal channel connecting the input and output chip and the surface of the second substrate.
  15. 根据权利要求1所述的芯片系统,还包括:The chip system according to claim 1, further comprising:
    散热结构,覆盖所述第一功能芯片和所述第二功能芯片;A heat dissipation structure covering the first functional chip and the second functional chip;
    其中,所述散热结构在覆盖所述第一功能芯片表面的区域内与所述第一功能芯片表面接触;所述散热结构覆盖所述第二功能芯片表面的区域与所述第二功能芯片表面接触;所述散热结构覆盖所述第一功能芯片之间裸露的所述第一基板的区域内与所述第一基板接触。Wherein, the heat dissipation structure is in contact with the surface of the first functional chip in the area covering the surface of the first functional chip; the heat dissipation structure covers the area of the surface of the second functional chip and the surface of the second functional chip. Contact; the heat dissipation structure contacts the first substrate in a region covering the exposed first substrate between the first functional chips.
  16. 根据权利要求15所述的芯片系统,其中,所述散热结构包括多个凸起结构;The chip system of claim 15, wherein the heat dissipation structure includes a plurality of protruding structures;
    位于覆盖所述第一功能芯片的区域内的所述凸起结构,向所述第一功能芯片表面延伸并接触所述第一功能芯片;The protruding structure located in the area covering the first functional chip extends toward the surface of the first functional chip and contacts the first functional chip;
    位于覆盖所述第一功能芯片之间裸露的所述第一基板的区域内的所述凸起结构,向所述第一基板延伸并接触所述第一基板。The protruding structure located in the area covering the exposed first substrate between the first functional chips extends toward the first substrate and contacts the first substrate.
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