WO2024012611A1 - Diamond coating micro drill bit, and preparation method therefor and use thereof - Google Patents

Diamond coating micro drill bit, and preparation method therefor and use thereof Download PDF

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WO2024012611A1
WO2024012611A1 PCT/CN2023/123688 CN2023123688W WO2024012611A1 WO 2024012611 A1 WO2024012611 A1 WO 2024012611A1 CN 2023123688 W CN2023123688 W CN 2023123688W WO 2024012611 A1 WO2024012611 A1 WO 2024012611A1
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drill bit
micro drill
diamond
diamond coating
preparation
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PCT/CN2023/123688
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French (fr)
Chinese (zh)
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石倩
张聿铭
苏一凡
林松盛
张程
唐鹏
代明江
黄淑琪
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广东省科学院新材料研究所
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Publication of WO2024012611A1 publication Critical patent/WO2024012611A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23BTURNING; BORING
    • B23B51/00Tools for drilling machines
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A diamond coating micro drill bit, and a preparation method therefor and the use thereof, which belong to the technical field of micro drill bits. The method comprises: before a diamond coating is deposited, subjecting a micro drill bit to chemical pretreatment, wherein the diameter of the micro drill bit is 0.35-0.75 mm, the grain size is 0.3-1.0 μm, and the cobalt content is 4-8 wt%; the chemical pretreatment comprises a first acid etching, an alkali etching and a second acid etching; an acid etching liquid comprises nitric acid, hydrochloric acid and water in a volume ratio of 1 : 2-4 : 10-15; an alkali etching liquid comprises potassium ferricyanide, potassium nitrate and water in a volume ratio of 1 : 1 : 10; and the time taken for the three instances of etching is respectively 10-30 s, 2-6 min and 10-50 s. The method can significantly reduce the influence of the chemical pretreatment on the breaking strength of the micro drill bit and the preparation effect of the diamond coating, the Co removal effect is good, the etching efficiency is high, and the micro drill bit obtained can be used for machining circuit boards.

Description

一种金刚石涂层微细钻头及其制备方法与应用A diamond-coated micro drill bit and its preparation method and application 技术领域:Technical areas:
本发明涉及微细钻头技术领域,具体而言,涉及一种金刚石涂层微细钻头及其制备方法与应用。The present invention relates to the technical field of micro drill bits, and specifically to a diamond-coated micro drill bit and its preparation method and application.
背景技术:Background technique:
随着5G通讯时代的到来,基站正在向小型化、轻量化和高集成化发展。其中5G腔体滤波器由于体积和性能方面的要求,内部一般需要1PCS微带PCB(Printed Circuit Board)电路。面向5G用的PCB是由铜箔、树脂、陶瓷填料或多种特殊编织玻璃纤维布组成的层压复合材料。制造PCB电路板其中一个关键的加工步骤是钻通孔,在加工过程中,需要使用硬质合金微细钻头加工大量孔径为0.2-0.8mm的通孔。由于PCB为纤维增强并含有多层铜箔的复合材料,经过一个短的钻削周期后,容易导致微细钻头较快地磨损失效,较短的微细钻头工作寿命和频繁的更换微细钻头已经成为PCB行业高效制造面临的难题。With the advent of the 5G communication era, base stations are developing towards miniaturization, lightweight and high integration. Among them, the 5G cavity filter generally requires a 1PCS microstrip PCB (Printed Circuit Board) circuit due to volume and performance requirements. PCBs for 5G are laminated composite materials composed of copper foil, resin, ceramic fillers or a variety of special woven glass fiber cloths. One of the key processing steps in manufacturing PCB circuit boards is drilling through holes. During the processing process, a large number of through holes with a diameter of 0.2-0.8mm need to be processed using carbide micro drills. Since PCB is a fiber-reinforced composite material containing multiple layers of copper foil, after a short drilling cycle, the micro drill bit will easily wear out and fail quickly. The short working life of the micro drill bit and frequent replacement of the micro drill bit have become a problem for PCB. Difficulties faced by the industry in efficient manufacturing.
为了延长PCB板微细钻头的工作寿命,在其表面采用化学气相沉积法(CVD)沉积金刚石涂层是一种有效的解决办法。金刚石具有极高的硬度、优良的耐磨性和较低的摩擦系数,能提高其排屑能力,有效保护切削刃。金刚石涂层微细钻头应用于陶瓷基PCB时可成倍的延长刀具寿命,与同种的无涂层刀具相比其钻孔质量也有较大幅度的提高。In order to extend the working life of PCB board micro-drills, it is an effective solution to use chemical vapor deposition (CVD) to deposit a diamond coating on its surface. Diamond has extremely high hardness, excellent wear resistance and low friction coefficient, which can improve its chip removal ability and effectively protect the cutting edge. Diamond-coated micro drill bits can exponentially extend tool life when applied to ceramic-based PCBs, and their drilling quality is also greatly improved compared to the same type of uncoated tools.
然而,微细钻头中的钨钴系硬质合金中存在作为粘结剂的Co,在沉积金刚石的过程中会促进石墨相的生成,极大地降低了金刚石涂层的附着力。因而在沉积金刚石涂层之前,均需对硬质合金表面进行特定的预处理。However, the presence of Co as a binder in the tungsten-cobalt cemented carbide in micro drill bits promotes the formation of graphite phase during the deposition of diamond, greatly reducing the adhesion of the diamond coating. Therefore, specific pretreatment of the cemented carbide surface is required before depositing a diamond coating.
现有技术中的相关预处理方式会导致基底表面存在大量的孔隙及空洞,对基底表面造成 损伤,且Co去除效果差,并由此导致微细钻头断裂强度下降,进而容易导致钻孔过程中容易发生断刀现象。The relevant pretreatment methods in the existing technology will lead to the presence of a large number of pores and cavities on the substrate surface, causing damage to the substrate surface. Damage, and the Co removal effect is poor, which leads to a decrease in the fracture strength of the micro drill bit, which may easily lead to tool breakage during the drilling process.
鉴于此,特提出本发明。In view of this, the present invention is proposed.
发明内容:Contents of the invention:
本发明的目的之一在于提供一种金刚石涂层微细钻头的制备方法以解决上述技术问题。One object of the present invention is to provide a method for preparing a diamond-coated micro drill bit to solve the above technical problems.
本发明的目的之二在于提供一种由上述制备方法制备而得的金刚石涂层微细钻头。The second object of the present invention is to provide a diamond-coated micro drill bit prepared by the above preparation method.
本发明的目的之三在于提供一种上述金刚石涂层微细钻头的应用。The third object of the present invention is to provide an application of the above-mentioned diamond-coated micro drill bit.
本申请可这样实现:This application can be implemented as follows:
第一方面,本申请提供一种金刚石涂层微细钻头的制备方法,其包括以下步骤:In a first aspect, this application provides a method for preparing a diamond-coated micro drill bit, which includes the following steps:
在沉积金刚石涂层之前,将微细钻头进行化学预处理;Chemically pretreating micro-fine drill bits before depositing the diamond coating;
微细钻头的直径为0.35-0.75mm,晶粒度为0.3-1.0μm,含钴量为4-8wt%;The diameter of the micro drill is 0.35-0.75mm, the grain size is 0.3-1.0μm, and the cobalt content is 4-8wt%;
化学预处理包括依次进行的第一次酸刻蚀、碱刻蚀以及第二次酸刻蚀;Chemical pretreatment includes the first acid etching, alkali etching and the second acid etching in sequence;
其中,第一次酸刻蚀所用的酸刻蚀液和第二次酸刻蚀所用的酸刻蚀液均独立地包括体积比为1:2-4:10-15的硝酸、盐酸和水;碱刻蚀所用的碱刻蚀液包括体积比为1:1:10的铁氰化钾、硝酸钾和水;Wherein, the acid etching liquid used for the first acid etching and the acid etching liquid used for the second acid etching independently include nitric acid, hydrochloric acid and water in a volume ratio of 1:2-4:10-15; The alkali etching solution used in alkali etching includes potassium ferricyanide, potassium nitrate and water in a volume ratio of 1:1:10;
第一次酸刻蚀时间为10-30s;碱刻蚀时间为2-6min;第二次酸刻蚀时间为10-50s。The first acid etching time is 10-30s; the alkali etching time is 2-6min; the second acid etching time is 10-50s.
在可选的实施方式中,微细钻头的材质为硬质合金,优选为WC硬质合金;In an optional embodiment, the material of the micro drill bit is cemented carbide, preferably WC cemented carbide;
和/或,金刚石涂层所含的金刚石晶粒包括微米晶、纳米晶或由微米晶和纳米晶共同组成的梯度晶。And/or, the diamond grains contained in the diamond coating include micron crystals, nanocrystals or gradient crystals composed of micron crystals and nanocrystals.
在可选的实施方式中,化学预处理之前,还包括将微细钻头进行清洗。 In an optional embodiment, before the chemical pretreatment, the micro drill bit is also cleaned.
在可选的实施方式中,将微细钻头置于有机溶剂中进行超声清洗。In an optional embodiment, the micro drill bit is placed in an organic solvent for ultrasonic cleaning.
在可选的实施方式中,有机溶剂包括无水乙醇、丙酮和异丙醇中的至少一种。In an optional embodiment, the organic solvent includes at least one of absolute ethanol, acetone and isopropyl alcohol.
在可选的实施方式中,超声清洗是于40-60℃的条件下进行20-40min。In an optional embodiment, ultrasonic cleaning is performed at 40-60°C for 20-40 minutes.
在可选的实施方式中,化学预处理之前,还包括将超声清洗后的微细钻头进行干燥。In an optional embodiment, before the chemical pretreatment, the ultrasonic cleaned micro drill bit is also dried.
在可选的实施方式中,干燥是于纯度不低于99.99%的氮气氛围下进行。In an optional embodiment, drying is performed under a nitrogen atmosphere with a purity of not less than 99.99%.
在可选的实施方式中,在沉积金刚石涂层之前,还包括将化学预处理后的微细钻头进行种植籽晶处理。In an optional embodiment, before depositing the diamond coating, the method further includes seeding the chemically pretreated micro drill bit.
在可选的实施方式中,种植籽晶处理包括:将化学预处理后的微细钻头于含有金刚石粉末的处理溶液中进行超声波振动处理。In an optional embodiment, the seed crystal planting treatment includes subjecting the chemically pretreated micro drill bit to ultrasonic vibration treatment in a treatment solution containing diamond powder.
在可选的实施方式中,处理溶液由无水酒精与纳米金刚石粉按1L:0.3-0.5g的比例配置而得。In an optional embodiment, the treatment solution is prepared from absolute alcohol and nanodiamond powder in a ratio of 1 L: 0.3-0.5 g.
在可选的实施方式中,纳米金刚石粉的粒径为1-4μm。In an optional embodiment, the particle size of nanodiamond powder is 1-4 μm.
在可选的实施方式中,种植籽晶处理的时间为10-15min。In an optional embodiment, the time for planting seed crystals is 10-15 minutes.
在可选的实施方式中,沉积金刚石涂层采用化学气相沉积方式进行。In an alternative embodiment, the diamond coating is deposited using chemical vapor deposition.
在可选的实施方式中,当所需沉积的金刚石涂层的晶粒为微米晶时,沉积条件包括:热丝温度为2000-2200℃,热丝-基体距离为18-22mm,衬底温度为800-850℃,CH4的流量为50-70sccm,H2的流量为17000-19000sccm,气压为5-10mbar,沉积时间为8-20h。In an optional embodiment, when the grains of the diamond coating to be deposited are micron crystals, the deposition conditions include: the hot wire temperature is 2000-2200°C, the hot wire-substrate distance is 18-22 mm, and the substrate temperature The temperature is 800-850℃, the flow rate of CH4 is 50-70sccm, the flow rate of H2 is 17000-19000sccm, the air pressure is 5-10mbar, and the deposition time is 8-20h.
在可选的实施方式中,当所需沉积的金刚石涂层的晶粒为纳米晶时,沉积条件包括:热丝温度为2000-2200℃,热丝-基体距离为18-22mm,衬底温度为800-850℃,CH4的流量为20-40sccm,H2的流量为8000-10000sccm,气压为1-5mbar,沉积时间为8-20h。 In an optional embodiment, when the grains of the diamond coating to be deposited are nanocrystals, the deposition conditions include: the hot wire temperature is 2000-2200°C, the hot wire-substrate distance is 18-22 mm, and the substrate temperature The temperature is 800-850℃, the flow rate of CH4 is 20-40sccm, the flow rate of H2 is 8000-10000sccm, the air pressure is 1-5mbar, and the deposition time is 8-20h.
在可选的实施方式中,当所需沉积的金刚石涂层的晶粒为梯度晶时,沉积条件包括:热丝温度为2000-2200℃,热丝-基体距离为18-22mm,衬底温度为800-850℃,CH4的流量为30-165sccm,H2的流量为8000-10000sccm,气压为1-5mbar,沉积时间为8-20h。In an optional embodiment, when the grains of the diamond coating to be deposited are gradient crystals, the deposition conditions include: the hot wire temperature is 2000-2200°C, the hot wire-substrate distance is 18-22 mm, and the substrate temperature The temperature is 800-850℃, the flow rate of CH4 is 30-165sccm, the flow rate of H2 is 8000-10000sccm, the air pressure is 1-5mbar, and the deposition time is 8-20h.
第二方面,本申请提供一种金刚石涂层微细钻头,经前述实施方式任一项的制备方法制备而得。In a second aspect, the present application provides a diamond-coated micro drill bit, which is prepared by the preparation method of any one of the preceding embodiments.
第三方面,本申请提供如前述实施方式的金刚石涂层微细钻头的应用,金刚石涂层微细钻头用于线路板加工。In a third aspect, the present application provides the application of the diamond-coated micro drill bit as in the aforementioned embodiment, and the diamond-coated micro drill bit is used for circuit board processing.
在可选的实施方式中,线路板为含铜箔和/或PTFE和/或陶瓷填料的5G通讯用PCB线路板。In an optional embodiment, the circuit board is a 5G communication PCB circuit board containing copper foil and/or PTFE and/or ceramic filler.
本申请的有益效果包括:The beneficial effects of this application include:
本申请提供的上述化学预处理方式能够在有效缩短酸溶液刻蚀时间(提高刻蚀效率)的基础上,实现不显著弱化微细钻头的断裂强度的效果。并且,该方法能够提高基体的表面粗糙度,提高基体与涂层之间的附着性能,加强基体与金刚石涂层之间的机械锁合效果,提高膜基结合力。此外,该方式的Co去除效果好,刻蚀效率高。所得的金刚石涂层微细钻头具有较高的断裂强度,涂层与基体之间结合良好,钻孔过程中不容易发生断刀现象,可用于线路板加工。The above chemical pretreatment method provided by this application can achieve the effect of not significantly weakening the fracture strength of the micro drill bit on the basis of effectively shortening the etching time of the acid solution (improving the etching efficiency). Moreover, this method can improve the surface roughness of the substrate, improve the adhesion between the substrate and the coating, strengthen the mechanical locking effect between the substrate and the diamond coating, and improve the film-base bonding force. In addition, this method has good Co removal effect and high etching efficiency. The obtained diamond-coated micro drill bit has high fracture strength, good bonding between the coating and the substrate, is not prone to tool breakage during the drilling process, and can be used for circuit board processing.
附图说明Description of drawings
为了更清楚地说明本发明实施例的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,应当理解,以下附图仅示出了本发明的某些实施例,因此不应被看作是对范围的限定,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图 获得其他相关的附图。In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and therefore do not should be regarded as a limitation of the scope. For those of ordinary skill in the art, without exerting creative efforts, they can also make reference to these drawings. Get other relevant drawings.
图1为本申请实施例1中经化学预处理后的微细钻头的表面形貌图;Figure 1 is a surface morphology diagram of a micro drill bit after chemical pretreatment in Example 1 of the present application;
图2为图1方框区域对应的放大图;Figure 2 is an enlarged view corresponding to the boxed area in Figure 1;
图3为本申请实施例1中金刚石涂层微细钻头在经过钻孔测试后的扫描电镜图。Figure 3 is a scanning electron microscope image of the diamond-coated micro drill bit after drilling testing in Example 1 of the present application.
图4为本申请对比例2中金刚石涂层细微钻头经过钻孔测试后的扫描电镜图。Figure 4 is a scanning electron microscope image of the diamond-coated micro drill bit in Comparative Example 2 of the present application after drilling testing.
具体实施方式:Detailed ways:
为使本发明实施例的目的、技术方案和优点更加清楚,下面将对本发明实施例中的技术方案进行清楚、完整地描述。实施例中未注明具体条件者,按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者,均为可以通过市售购买获得的常规产品。In order to make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely below. If the specific conditions are not specified in the examples, the conditions should be carried out according to the conventional conditions or the conditions recommended by the manufacturer. If the manufacturer of the reagents or instruments used is not indicated, they are all conventional products that can be purchased commercially.
下面对本申请提供的金刚石涂层微细钻头及其制备方法与应用进行具体说明。The following is a detailed description of the diamond-coated micro drill bit provided by this application and its preparation method and application.
本申请提出了一种金刚石涂层微细钻头的制备方法,其包括以下步骤:This application proposes a method for preparing a diamond-coated micro drill bit, which includes the following steps:
在微细钻头表面沉积金刚石涂层之前,将微细钻头进行化学预处理。The micro drill bits are chemically pre-treated before the diamond coating is deposited on the surface of the micro drill bits.
需说明的是,不同的微细钻头所适用的化学预处理条件是不同的,本申请所针对的微细钻头的直径为0.35-0.75mm,晶粒度为0.3-1.0μm,含钴量为4-8wt%。It should be noted that the chemical pretreatment conditions applicable to different micro drill bits are different. The diameter of the micro drill bit targeted by this application is 0.35-0.75 mm, the grain size is 0.3-1.0 μm, and the cobalt content is 4- 8wt%.
示例性地,该微细钻头的直径可以为0.35mm、0.4mm、0.45mm、0.5mm、0.55mm、0.6mm、0.65mm、0.7mm或0.75mm等,也可以为0.35-0.75mm范围内的其它任意值。For example, the diameter of the micro drill bit can be 0.35mm, 0.4mm, 0.45mm, 0.5mm, 0.55mm, 0.6mm, 0.65mm, 0.7mm or 0.75mm, etc., or other diameters within the range of 0.35-0.75mm. Any value.
晶粒度可以为0.3μm、0.4μm、0.5μm、0.6μm、0.7μm、0.8μm、0.9μm或1μm等,也可以为0.3-1.0μm范围内的其它任意值。The grain size may be 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm or 1 μm, etc., or any other value within the range of 0.3-1.0 μm.
含钴量可以为4wt%、4.5wt%、5wt%、5.5wt%、6wt%、6.5wt%、7wt%、7.5wt%或8wt%等,也可以为4-8wt%范围内的其它任意值。 The cobalt content can be 4wt%, 4.5wt%, 5wt%, 5.5wt%, 6wt%, 6.5wt%, 7wt%, 7.5wt% or 8wt%, etc., or any other value within the range of 4-8wt% .
上述微细钻头的材质为硬质合金,例如为WC硬质合金。The material of the above-mentioned micro drill bit is cemented carbide, for example, WC cemented carbide.
本申请中,化学预处理包括依次进行的第一次酸刻蚀、碱刻蚀以及第二次酸刻蚀。In this application, the chemical pretreatment includes sequentially performing the first acid etching, the alkali etching and the second acid etching.
其中,第一次酸刻蚀所用的酸刻蚀液和第二次酸刻蚀所用的酸刻蚀液均独立地包括体积比为1:2-4:10-15的硝酸、盐酸和水。碱刻蚀所用的碱刻蚀液包括体积比为1:1:10的铁氰化钾、硝酸钾和水。Wherein, the acid etching liquid used for the first acid etching and the acid etching liquid used for the second acid etching independently include nitric acid, hydrochloric acid and water in a volume ratio of 1:2-4:10-15. The alkali etching solution used in alkali etching includes potassium ferricyanide, potassium nitrate and water in a volume ratio of 1:1:10.
其中,酸刻蚀液中硝酸、盐酸和水的体积比可为1:2:10、1:2:11、1:2:12、1:2:13、1:2:14、1:2:15、1:3:10、1:3:11、1:3:12、1:3:13、1:3:14、1:3:15、1:4:10、1:4:11、1:4:12、1:4:13、1:4:14或1:4:15等,也可以为1:2-4:10-15范围内的其它任意值。Among them, the volume ratio of nitric acid, hydrochloric acid and water in the acid etching solution can be 1:2:10, 1:2:11, 1:2:12, 1:2:13, 1:2:14, 1:2 :15, 1:3:10, 1:3:11, 1:3:12, 1:3:13, 1:3:14, 1:3:15, 1:4:10, 1:4:11 , 1:4:12, 1:4:13, 1:4:14 or 1:4:15, etc., or any other value in the range of 1:2-4:10-15.
可参考地,上述刻蚀均可采用微细钻头浸泡于刻蚀液中的方式进行。For reference, the above etching can be performed by immersing a fine drill bit in the etching liquid.
上述第一次酸刻蚀的作用是用于去除微细钻头表面的Co;碱刻蚀的作用是去除基体(WC-Co基体)中的WC颗粒,暴露出基体中Co元素并使硬质合金表面粗化,以增强涂层对衬底材料的接触面积,提高涂层的附着力;第二次酸刻蚀的作用是用于去除基体中一定深度的Co,以避免Co在沉积金刚石涂层过程中的不利影响。The function of the above-mentioned first acid etching is to remove Co from the surface of the micro drill bit; the function of alkali etching is to remove the WC particles in the matrix (WC-Co matrix), exposing the Co element in the matrix and making the surface of the cemented carbide Roughening to enhance the contact area of the coating to the substrate material and improve the adhesion of the coating; the second acid etching is used to remove Co to a certain depth in the matrix to avoid Co in the process of depositing the diamond coating. adverse effects.
本申请中,第一次酸刻蚀时间可以为10-30s,如10s、12s、15s、18s、20s、22s、25s、28s或30s等,也可以为10-30s围内的其它任意值。In this application, the first acid etching time can be 10-30s, such as 10s, 12s, 15s, 18s, 20s, 22s, 25s, 28s or 30s, etc., or it can be any other value within the range of 10-30s.
若第一次酸刻蚀时间短于10s,容易导致Co去除量太少,不利于后续刻蚀WC;长于30s,容易导致基体断裂强度下降较多。If the first acid etching time is shorter than 10s, it will easily lead to too little Co removal, which is not conducive to subsequent etching of WC; if it is longer than 30s, it will easily lead to a greater decrease in the fracture strength of the matrix.
碱刻蚀时间可以为2-6min,如2min、2.5min、3min、3.5min、4min、4.5min、5min、5.5min或6min等,也可以为2-6min围内的其它任意值。The alkali etching time can be 2-6min, such as 2min, 2.5min, 3min, 3.5min, 4min, 4.5min, 5min, 5.5min or 6min, etc., or it can be any other value within the range of 2-6min.
若碱刻蚀时间短于2min,表层的Co没有完全暴露出来,容易导致无法完全去除;长于 6min,基体腐蚀较深,容易导致断裂强度下降较多。If the alkali etching time is shorter than 2 minutes, the Co on the surface layer is not fully exposed, which may lead to incomplete removal; if it is longer than 6min, the matrix is corroded deeply, which can easily lead to a greater decrease in fracture strength.
第二次酸刻蚀时间可以为10-50s,如10s、15s、20s、25s、30s、35s、40s、45s或50s等,也可以为10-50s围内的其它任意值。The second acid etching time can be 10-50s, such as 10s, 15s, 20s, 25s, 30s, 35s, 40s, 45s or 50s, etc., or it can be any other value within the range of 10-50s.
若第二次酸刻蚀时间短于10s,容易引起基体表层仍然残留Co而导致后续金刚石涂层质量不佳;长于50s,容易产生脆性层而导致涂层与基体结合较差。If the second acid etching time is shorter than 10s, it is easy to cause Co to remain on the surface of the substrate, resulting in poor quality of the subsequent diamond coating; if it is longer than 50s, it is easy to produce a brittle layer, resulting in poor bonding between the coating and the substrate.
上述第一次酸刻蚀后,先用去离子水浸泡清洗处理后的微细钻头,随后再进行碱刻蚀。碱刻蚀后,先将处理后的微细钻头于去离子水中浸泡,以去除基体表面的悬浮离子,随后用去离子水浸泡清洗,再进行第二次酸刻蚀。第二次酸刻蚀后,将处理后的微细钻头用去离子水浸泡清洗,随后再进行后续处理。After the first acid etching, the cleaned micro drill bit is first soaked in deionized water, and then alkali etched. After alkali etching, the treated micro drill bit is first soaked in deionized water to remove suspended ions on the surface of the substrate, and then soaked and cleaned in deionized water before performing a second acid etching. After the second acid etching, the processed micro drill bits were soaked and cleaned in deionized water before subsequent processing.
需说明的是,由于本申请所针对的微细钻头的尺寸较小,过长的酸碱预处理均容易使钻头的断裂强度大幅度降低,从而导致钻孔过程中容易发生断刀现象。It should be noted that due to the small size of the micro drill bit targeted by this application, excessive acid and alkali pretreatment can easily significantly reduce the fracture strength of the drill bit, resulting in easy tool breakage during the drilling process.
本申请提供的上述化学预处理方式能够在有效缩短酸溶液刻蚀时间(提高刻蚀效率)的基础上,实现不显著弱化微细钻头的断裂强度。并且,该方法能够提高基体的表面粗糙度,提高基体与涂层之间的附着性能,加强基体与金刚石涂层之间的机械锁合效果,提高膜基结合力。此外,该方式还能较现有的预处理方式大大减少基底表面存在孔隙及空洞,降低对基体表面造成的损伤。The above chemical pretreatment method provided by this application can effectively shorten the acid solution etching time (increase etching efficiency) without significantly weakening the fracture strength of the micro drill bit. Moreover, this method can improve the surface roughness of the substrate, improve the adhesion between the substrate and the coating, strengthen the mechanical locking effect between the substrate and the diamond coating, and improve the film-base bonding force. In addition, this method can greatly reduce the presence of pores and cavities on the substrate surface and reduce damage to the substrate surface compared with existing pretreatment methods.
在一些实施方式中,化学预处理之前,还包括将微细钻头进行清洗。In some embodiments, before the chemical pretreatment, the micro drill bit is also cleaned.
例如,可将微细钻头置于有机溶剂中进行超声清洗。For example, micro drill bits can be placed in organic solvents for ultrasonic cleaning.
作为参考地,上述有机溶剂可包括无水乙醇、丙酮和异丙醇中的至少一种。For reference, the above-mentioned organic solvent may include at least one of absolute ethanol, acetone and isopropyl alcohol.
超声清洗可以于40-60℃(如40℃、45℃、50℃、55℃或60℃等)的条件下进行20-40min (如20min、25min、30min、35min或40min等)。Ultrasonic cleaning can be carried out at 40-60℃ (such as 40℃, 45℃, 50℃, 55℃ or 60℃, etc.) for 20-40min (Such as 20min, 25min, 30min, 35min or 40min, etc.).
通过上述清洗处理,可去除微细钻头表面的部分杂质及油污,有利于提高后续的刻蚀效果。Through the above cleaning process, some impurities and oil stains on the surface of the fine drill bit can be removed, which is beneficial to improving the subsequent etching effect.
进一步地,化学预处理之前,还包括将超声清洗后的微细钻头进行干燥。Furthermore, before the chemical pretreatment, the ultrasonic cleaned micro drill bits are dried.
可参考地,干燥可以于纯度不低于99.99%的氮气氛围下进行以避免自然干燥遗留的水渍影响后续刻蚀效果。For reference, drying can be performed in a nitrogen atmosphere with a purity of not less than 99.99% to avoid water stains left by natural drying from affecting the subsequent etching effect.
进一步地,在沉积金刚石涂层之前,还包括将化学预处理后的微细钻头进行种植籽晶处理。Further, before depositing the diamond coating, it also includes seeding the chemically pretreated micro drill bit.
可参考地,种植籽晶处理包括:将化学预处理后的微细钻头于含有金刚石粉末的处理溶液中进行超声波振动处理。For reference, the seed crystal planting treatment includes: subjecting the chemically pretreated micro drill bit to ultrasonic vibration treatment in a treatment solution containing diamond powder.
上述处理溶液由无水酒精与纳米金刚石粉(粒径约为1-4μm)按1L:0.3-0.5g(如1L:0.3g、1L:0.35g、1L:0.4g、1L:0.45g或1L:0.5g等)的比例配置而得。The above treatment solution is composed of anhydrous alcohol and nano-diamond powder (particle size is about 1-4 μm) according to 1L: 0.3-0.5g (such as 1L: 0.3g, 1L: 0.35g, 1L: 0.4g, 1L: 0.45g or 1L :0.5g, etc.).
种植籽晶处理的时间为10-15min,如10min、10.5min、11min、11.5min、12min、The time for planting seed crystals is 10-15min, such as 10min, 10.5min, 11min, 11.5min, 12min,
12.5min、13min、13.5min、14min、14.5min或15min等,也可以为10-15min范围内的其它任意值。12.5min, 13min, 13.5min, 14min, 14.5min or 15min, etc., or any other value within the range of 10-15min.
通过上述种植籽晶处理,可将金刚石种子均匀分布于基体表面,使得后续沉积金刚石涂层时更易生成金刚石相。Through the above seed crystal planting process, diamond seeds can be evenly distributed on the surface of the substrate, making it easier to generate a diamond phase during subsequent deposition of a diamond coating.
本申请中,金刚石涂层所含的金刚石晶粒包括微米晶、纳米晶或由微米晶和纳米晶共同组成的梯度晶。In this application, the diamond grains contained in the diamond coating include micron crystals, nanocrystals or gradient crystals composed of micron crystals and nanocrystals.
其中,由靠近基体的一侧至远离基体的一侧,梯度晶呈现微米晶梯度减少、纳米晶梯度 增加的形式。Among them, from the side close to the matrix to the side far away from the matrix, the gradient crystal shows a decreasing micron crystal gradient and a nanocrystal gradient. Increased form.
本申请中,金刚石涂层可以仅为单层,也可以为多层(如2层、3层或4层等)。金刚石涂层的总厚度可以为2-20μm,如2μm、5μm、8μm、10μm、12μm、15μm、18μm或20μm等,也可以为2-20μm范围内的其它任意值。In this application, the diamond coating can be only a single layer or multiple layers (such as 2 layers, 3 layers or 4 layers, etc.). The total thickness of the diamond coating may be 2-20 μm, such as 2 μm, 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, 18 μm or 20 μm, or any other value within the range of 2-20 μm.
当金刚石涂层为单层时,该金刚石涂层所含的金刚石晶粒优选仅为纳米晶或微米晶。当金刚石涂层为多层时,其可以由纳米晶层(即金刚石涂层所含的金刚石晶粒为纳米晶)和微米晶层(即金刚石涂层所含的金刚石晶粒为微米晶)交替组成。When the diamond coating is a single layer, the diamond grains contained in the diamond coating are preferably only nanocrystals or micron crystals. When the diamond coating is multi-layered, it can alternate between nanocrystalline layers (that is, the diamond grains contained in the diamond coating are nanocrystals) and micron crystal layers (that is, the diamond grains contained in the diamond coating are micron crystals). composition.
本申请中,沉积金刚石涂层采用化学气相沉积方式进行。In this application, the diamond coating is deposited using chemical vapor deposition.
当所需沉积的金刚石涂层的晶粒为微米晶时,沉积条件包括:热丝温度为2000-2200℃(如2000℃、2020℃、2050℃、2080℃、2100℃、2120℃、2150℃、2180℃或2200℃等),热丝-基体距离为18-22mm(如18mm、18.5mm、19mm、19.5mm、20mm、20.5mm、21mm、21.5mm或22mm等),衬底温度为800-850℃(如800℃、810℃、820℃、830℃、840℃或850℃等),CH4的流量为(如50sccm、52sccm、55sccm、58sccm、60sccm、62sccm、65sccm、68sccm或70sccm等),H2的流量为17000-19000sccm(如17000sccm、17200sccm、17500sccm、17800sccm、18000sccm、18200sccm、18500sccm、18800sccm或19000sccm等),气压为5-10mbar(如5mbar、6mbar、7mbar、8mbar、9mbar或10mbar等),沉积时间为8-20h(如8h、10h、12h、15h、18h或20h等)。When the grains of the diamond coating to be deposited are micron crystals, the deposition conditions include: the hot wire temperature is 2000-2200℃ (such as 2000℃, 2020℃, 2050℃, 2080℃, 2100℃, 2120℃, 2150℃ , 2180℃ or 2200℃, etc.), the hot wire-substrate distance is 18-22mm (such as 18mm, 18.5mm, 19mm, 19.5mm, 20mm, 20.5mm, 21mm, 21.5mm or 22mm, etc.), and the substrate temperature is 800- 850℃ (such as 800℃, 810℃, 820℃, 830℃, 840℃ or 850℃, etc.), the flow rate of CH4 is (such as 50sccm, 52sccm, 55sccm, 58sccm, 60sccm, 62sccm, 65sccm, 68sccm or 70sccm, etc.), The flow rate of H2 is 17000-19000sccm (such as 17000sccm, 17200sccm, 17500sccm, 17800sccm, 18000sccm, 18200sccm, 18500sccm, 18800sccm or 19000sccm, etc.), and the air pressure is 5-10mbar (such as 5mbar, 6mbar, 7 mbar, 8mbar, 9mbar or 10mbar, etc.), The deposition time is 8-20h (such as 8h, 10h, 12h, 15h, 18h or 20h, etc.).
当所需沉积的金刚石涂层的晶粒为纳米晶时,沉积条件包括:热丝温度为2000-2200℃(如2000℃、2020℃、2050℃、2080℃、2100℃、2120℃、2150℃、2180℃或2200℃等),热丝-基体距离为18-22mm(如18mm、18.5mm、19mm、19.5mm、20mm、20.5mm、21mm、 21.5mm或22mm等),衬底温度为800-850℃(如800℃、810℃、820℃、830℃、840℃或850℃等),CH4的流量为20-40sccm(20sccm、22sccm、25sccm、28sccm、30sccm、32sccm、35sccm、38sccm或40sccm等),H2的流量为8000-10000sccm(如8000sccm、8200sccm、8500sccm、8800sccm、9000sccm、9200sccm、9500sccm、9800sccm或10000sccm等),气压为1-5mbar(如1mbar、2mbar、3mbar、4mbar或5mbar等),沉积时间为8-20h(如8h、10h、12h、15h、18h或20h等)。When the grains of the diamond coating to be deposited are nanocrystals, the deposition conditions include: the hot wire temperature is 2000-2200℃ (such as 2000℃, 2020℃, 2050℃, 2080℃, 2100℃, 2120℃, 2150℃ , 2180℃ or 2200℃, etc.), the hot wire-substrate distance is 18-22mm (such as 18mm, 18.5mm, 19mm, 19.5mm, 20mm, 20.5mm, 21mm, 21.5mm or 22mm, etc.), the substrate temperature is 800-850℃ (such as 800℃, 810℃, 820℃, 830℃, 840℃ or 850℃, etc.), the flow rate of CH4 is 20-40sccm (20sccm, 22sccm, 25sccm , 28sccm, 30sccm, 32sccm, 35sccm, 38sccm or 40sccm, etc.), the flow rate of H2 is 8000-10000sccm (such as 8000sccm, 8200sccm, 8500sccm, 8800sccm, 9000sccm, 9200sccm, 9500sccm, 9800sccm or 10000sccm, etc.), air pressure is 1-5mbar ( Such as 1mbar, 2mbar, 3mbar, 4mbar or 5mbar, etc.), the deposition time is 8-20h (such as 8h, 10h, 12h, 15h, 18h or 20h, etc.).
当所需沉积的金刚石涂层的晶粒为梯度晶时,沉积条件包括:热丝温度为2000-2200℃(如2000℃、2020℃、2050℃、2080℃、2100℃、2120℃、2150℃、2180℃或2200℃等),热丝-基体距离为18-22mm(如18mm、18.5mm、19mm、19.5mm、20mm、20.5mm、21mm、21.5mm或22mm等),衬底温度为800-850℃(如800℃、810℃、820℃、830℃、840℃或850℃等),CH4的流量为30-165sccm(如30sccm、50sccm、80sccm、100sccm、120sccm、150sccm或165sccm等),H2的流量为8000-10000sccm(如8000sccm、8200sccm、8500sccm、8800sccm、9000sccm、9200sccm、9500sccm、9800sccm或10000sccm等),气压为1-5mbar(如1mbar、2mbar、3mbar、4mbar或5mbar等),沉积时间为8-20h(如8h、10h、12h、15h、18h或20h等)。When the grains of the diamond coating to be deposited are gradient crystals, the deposition conditions include: the hot wire temperature is 2000-2200℃ (such as 2000℃, 2020℃, 2050℃, 2080℃, 2100℃, 2120℃, 2150℃ , 2180℃ or 2200℃, etc.), the hot wire-substrate distance is 18-22mm (such as 18mm, 18.5mm, 19mm, 19.5mm, 20mm, 20.5mm, 21mm, 21.5mm or 22mm, etc.), and the substrate temperature is 800- 850℃ (such as 800℃, 810℃, 820℃, 830℃, 840℃ or 850℃, etc.), the flow rate of CH4 is 30-165sccm (such as 30sccm, 50sccm, 80sccm, 100sccm, 120sccm, 150sccm or 165sccm, etc.), H2 The flow rate is 8000-10000sccm (such as 8000sccm, 8200sccm, 8500sccm, 8800sccm, 9000sccm, 9200sccm, 9500sccm, 9800sccm or 10000sccm, etc.), and the air pressure is 1-5mbar (such as 1mbar, 2mbar, 3mbar, 4mbar or 5mbar, etc.) ), the deposition time is 8-20h (such as 8h, 10h, 12h, 15h, 18h or 20h, etc.).
也即,CH4与H2的流量以及气压的变化,会使得晶粒发生变化。In other words, changes in the flow rates of CH4 and H2 and gas pressure will cause changes in the grains.
通过上述方法,可使金刚石涂层均匀地沉积在微细钻头表面,金刚石涂层的结晶性好,具有棱角清晰的金刚石晶体。Through the above method, the diamond coating can be uniformly deposited on the surface of the fine drill bit. The diamond coating has good crystallinity and has diamond crystals with clear edges and corners.
相应地,本申请还提供了一种金刚石涂层微细钻头,其经上述制备方法制备而得。Correspondingly, this application also provides a diamond-coated micro drill bit, which is prepared by the above preparation method.
该金刚石涂层微细钻头具有较高的断裂强度,涂层与基体之间结合良好,钻孔过程中不 容易发生断刀现象。The diamond-coated micro-drill bit has high fracture strength, good bonding between the coating and the base, and does not need to be drilled during the drilling process. Knife breakage is prone to occur.
此外,本申请还提供了上述金刚石涂层微细钻头的应用,例如可用于线路板加工。In addition, this application also provides the application of the above-mentioned diamond-coated micro drill bit, which can be used for circuit board processing, for example.
示例性地,上述线路板可以为含有铜箔和/或PTFE和/或陶瓷填料的5G通讯用PCB线路板。For example, the above-mentioned circuit board may be a 5G communication PCB circuit board containing copper foil and/or PTFE and/or ceramic filler.
以下结合实施例对本发明的特征和性能作进一步的详细描述。The features and performance of the present invention will be described in further detail below with reference to examples.
实施例1Example 1
步骤(1):将微细钻头(WC-6wt%Co,钻头直径为0.5mm,晶粒尺寸为0.3-0.5μm)浸泡于无水乙醇中,在50℃下超声清洗30min;随后用纯度为99.99%的氮气进行干燥。Step (1): Soak the micro drill bit (WC-6wt%Co, drill diameter is 0.5mm, grain size is 0.3-0.5μm) in absolute ethanol, ultrasonically clean it at 50°C for 30 minutes; then use a drill with a purity of 99.99 % nitrogen for drying.
步骤(2):将步骤(1)处理后的微细钻头于由60mL硝酸、120mL盐酸以及600mL去离子水形成的酸刻蚀溶液中浸泡10s,再于去离子水中浸泡2分钟。Step (2): Soak the micro drill bit processed in step (1) in an acid etching solution composed of 60 mL nitric acid, 120 mL hydrochloric acid and 600 mL deionized water for 10 seconds, and then soak in deionized water for 2 minutes.
步骤(3):将步骤(2)处理后的微细钻头于按体积比为V(K3Fe(CN)6):V(KOH):V(H2O)=1:1:10混合形成的碱刻蚀溶液中浸泡4min,再于去离子水中浸泡2分钟。Step (3): The micro drill bit processed in step (2) is etched with alkali formed by mixing V(K3Fe(CN)6):V(KOH):V(H2O)=1:1:10 in a volume ratio Soak in the solution for 4 minutes, then soak in deionized water for 2 minutes.
步骤(4):将步骤(3)处理后的微细钻头于与步骤(2)同样的酸刻蚀溶液中浸泡30s,再于去离子水中浸泡2分钟。Step (4): Soak the micro drill bit processed in step (3) in the same acid etching solution as in step (2) for 30 seconds, and then soak in deionized water for 2 minutes.
步骤(5):将步骤(4)处理后的微细钻头放入配比浓度为0.35g金刚石粉末(粒径约为4μm)/1000mL无水乙醇的悬浊液中超声振荡,进行种植籽晶处理,植晶时间为10min。Step (5): Put the micro drill bit processed in step (4) into a suspension with a concentration of 0.35g diamond powder (particle size is about 4 μm)/1000mL absolute ethanol, and oscillate ultrasonically to perform seed crystal planting treatment , the crystal planting time is 10min.
步骤(6):将步骤(5)处理后的微细钻头置于CVD化学气相沉积设备中,热丝温度为2100℃,热丝-基体距离为20μm,衬底温度为800℃,CH4与H2各自流量为60sccm和18000sccm,气压为5mbar,沉积时间为8h,获得含微米晶的金刚石涂层(MCD)的微细钻 头。Step (6): Place the micro drill bit processed in step (5) in the CVD chemical vapor deposition equipment. The hot wire temperature is 2100°C, the hot wire-substrate distance is 20 μm, the substrate temperature is 800°C, and CH4 and H2 are each The flow rate is 60 sccm and 18000 sccm, the air pressure is 5 mbar, and the deposition time is 8 hours. Micro drills containing micron crystal diamond coating (MCD) are obtained. head.
本实施例中经预处理后的微细钻头表面形貌如图1和图2所示。由图1和图2可以看出:表面有较多的孔洞,为接下的金刚石涂层镀膜过程提供形核位点,且该方式Co的去除效果好,提高了涂层与基体间的结合力。The surface morphology of the pretreated micro drill bit in this embodiment is shown in Figures 1 and 2. It can be seen from Figures 1 and 2 that there are many holes on the surface, which provide nucleation sites for the subsequent diamond coating coating process, and this method has a good Co removal effect and improves the bonding between the coating and the substrate. force.
通过扫描电子显微镜对含金刚石涂层的微细钻头进行观察,发现涂层均匀地沉积在微细钻头表面上,结晶性好,能清晰地看到棱角清晰的金刚石晶体。The micro drill bit containing diamond coating was observed through a scanning electron microscope and it was found that the coating was uniformly deposited on the surface of the micro drill bit, with good crystallinity, and diamond crystals with clear edges and corners could be clearly seen.
将预处理后的微细钻头进行断裂强度测试实验,通过测试得其断裂强度为29N;将微细钻头进行钻孔测试,当钻孔的数目为4000个时,通过扫描电子显微镜观察微细钻头的后刀面发现涂层与基体之间结合良好,并没有发现涂层剥落的迹象(如图3所示)。The pretreated micro drill bit was subjected to a fracture strength test experiment, and the fracture strength was found to be 29N. The micro drill bit was tested for drilling. When the number of holes was 4,000, the back cutter of the micro drill bit was observed through a scanning electron microscope. It was found that the bonding between the coating and the substrate was good, and no signs of coating peeling were found (as shown in Figure 3).
实施例2Example 2
步骤(1):将微细钻头(WC-8wt%Co,钻头直径为0.75mm,晶粒尺寸为0.5-0.7μm)浸泡于丙酮中,在40℃下超声清洗40min;随后用纯度为99.99%的氮气进行干燥。Step (1): Soak the micro drill bit (WC-8wt%Co, drill diameter is 0.75mm, grain size is 0.5-0.7μm) in acetone, ultrasonically clean it at 40°C for 40 minutes; then use 99.99% purity Nitrogen for drying.
步骤(2):将步骤(1)处理后的微细钻头于由60mL硝酸、240mL盐酸以及600mL去离子水形成的酸刻蚀溶液中浸泡30s,再于去离子水中浸泡2分钟。Step (2): Soak the micro drill bit processed in step (1) in an acid etching solution composed of 60 mL nitric acid, 240 mL hydrochloric acid and 600 mL deionized water for 30 seconds, and then soak in deionized water for 2 minutes.
步骤(3):将步骤(2)处理后的微细钻头于按体积比为V(K3Fe(CN)6):V(KOH):V(H2O)=1:1:10混合形成的碱刻蚀溶液中浸泡6min,再于去离子水中浸泡2分钟。Step (3): The micro drill bit processed in step (2) is etched with alkali formed by mixing V(K3Fe(CN)6):V(KOH):V(H2O)=1:1:10 in a volume ratio Soak in the solution for 6 minutes, then soak in deionized water for 2 minutes.
步骤(4):将步骤(3)处理后的微细钻头于与步骤(2)同样的酸刻蚀溶液中浸泡50s,再于去离子水中浸泡2分钟。Step (4): Soak the micro drill bit processed in step (3) in the same acid etching solution as in step (2) for 50 seconds, and then soak in deionized water for 2 minutes.
步骤(5):将步骤(4)处理后的微细钻头放入配比浓度为0.5g金刚石粉末(粒径约为 3μm)/1000mL无水乙醇的悬浊液中超声振荡,进行种植籽晶处理,植晶时间为15min。Step (5): Put the micro drill bit processed in step (4) into diamond powder with a concentration of 0.5g (particle size is about 3μm)/1000mL of absolute ethanol suspension under ultrasonic vibration, and seed crystal planting was performed. The crystal planting time was 15 minutes.
步骤(6):将步骤(5)处理后的微细钻头置于CVD化学气相沉积设备中,热丝温度为2100℃,热丝-基体距离为20μm,衬底温度为800℃,CH4与H2各自流量为30sccm和9000sccm,气压为1mbar,沉积时间为8h,获得含纳米晶的金刚石涂层(NCD)的微细钻头。Step (6): Place the micro drill bit processed in step (5) in the CVD chemical vapor deposition equipment. The hot wire temperature is 2100°C, the hot wire-substrate distance is 20 μm, the substrate temperature is 800°C, and CH4 and H2 are each The flow rate is 30 sccm and 9000 sccm, the air pressure is 1 mbar, and the deposition time is 8 hours, to obtain a micro drill bit containing nanocrystalline diamond coating (NCD).
通过扫描电子显微镜对该金刚石涂层微细钻头进行观察,发现涂层均匀地沉积在微细钻头表面上,金刚石晶粒尺寸数较小,呈团簇型聚集,即呈现菜花形的外观型貌。Observing the diamond-coated micro drill bit through a scanning electron microscope, it was found that the coating was uniformly deposited on the surface of the micro drill bit, and the diamond grains were small in size and gathered in clusters, which gave them a cauliflower-shaped appearance.
将微细钻头进行断裂强度测试实验,得到其断裂强度为25N;另取样品做微细钻头钻孔测试,当钻孔的数目为4000个时,观察微细钻头的后刀面发现涂层与基体之间结合良好,并没有发现涂层剥落的迹象。The micro drill was subjected to a fracture strength test and the fracture strength was 25N. Another sample was taken for a micro drill drilling test. When the number of holes was 4,000, the flank surface of the micro drill was observed and it was found that there was a gap between the coating and the substrate. Bonded well and no signs of coating peeling were noted.
实施例3Example 3
步骤(1):将微细钻头(WC-4wt%Co,钻头直径为0.35mm,晶粒尺寸为0.8-1.0μm)浸泡于异丙醇中,在60℃下超声清洗20min;随后用纯度为99.99%的氮气进行干燥。Step (1): Soak the micro drill bit (WC-4wt%Co, drill diameter is 0.35mm, grain size is 0.8-1.0μm) in isopropyl alcohol, ultrasonically clean it at 60°C for 20 minutes; then use a drill with a purity of 99.99 % nitrogen for drying.
步骤(2):将步骤(1)处理后的微细钻头于由60mL硝酸、120mL盐酸以及900mL去离子水形成的酸刻蚀溶液中浸泡20s,再于去离子水中浸泡2分钟。Step (2): Soak the micro drill bit processed in step (1) in an acid etching solution composed of 60 mL nitric acid, 120 mL hydrochloric acid and 900 mL deionized water for 20 seconds, and then soak in deionized water for 2 minutes.
步骤(3):将步骤(2)处理后的微细钻头于按体积比为V(K3Fe(CN)6):V(KOH):V(H2O)=1:1:10混合形成的碱刻蚀溶液中浸泡2min,再于去离子水中浸泡2分钟。Step (3): The micro drill bit processed in step (2) is etched with alkali formed by mixing V(K3Fe(CN)6):V(KOH):V(H2O)=1:1:10 in a volume ratio Soak in the solution for 2 minutes, then soak in deionized water for 2 minutes.
步骤(4):将步骤(3)处理后的微细钻头于与步骤(2)同样的酸刻蚀溶液中浸泡10s,再于去离子水中浸泡2分钟。 Step (4): Soak the micro drill bit processed in step (3) in the same acid etching solution as in step (2) for 10 seconds, and then soak in deionized water for 2 minutes.
步骤(5):将步骤(4)处理后的微细钻头放入配比浓度为0.4g金刚石粉末(粒径约为1μm)/1000mL无水乙醇的悬浊液中超声振荡,进行种植籽晶处理,植晶时间为15min。Step (5): Put the micro drill bit processed in step (4) into a suspension with a concentration of 0.4g diamond powder (particle size is about 1 μm)/1000mL absolute ethanol, and oscillate ultrasonically to carry out seed crystal planting treatment. , the crystal planting time is 15min.
步骤(6):将步骤(5)处理后的微细钻头置于CVD化学气相沉积设备中,热丝温度为2100℃,热丝-基体距离为20μm,衬底温度为800℃,气压为1/5mbar,沉积时间为8h,前期CH4与H2各自流量为30sccm和9000sccm,后调节CH4流量为165sccm,获得含梯度金刚石涂层(GCD)的微细钻头。Step (6): Place the micro drill bit processed in step (5) in the CVD chemical vapor deposition equipment. The hot wire temperature is 2100°C, the hot wire-substrate distance is 20 μm, the substrate temperature is 800°C, and the air pressure is 1/ 5mbar, the deposition time is 8h, the flow rates of CH4 and H2 are 30sccm and 9000sccm respectively in the early stage, and the CH4 flow rate is adjusted to 165sccm later to obtain a micro drill bit containing gradient diamond coating (GCD).
通过扫描电子显微镜对含金刚石涂层的微细钻头进行观察,发现涂层均匀地沉积在微细钻头表面上,涂层表面呈现的是菜花形的表面形貌。The micro drill bit containing diamond coating was observed through a scanning electron microscope and it was found that the coating was uniformly deposited on the surface of the micro drill bit, and the coating surface showed a cauliflower-shaped surface morphology.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为26N;另取样品做微细钻头钻孔测试,当钻孔的数目为4000个时,观察微细钻头的后刀面发现涂层与基体之间结合良好,并没有发现涂层剥落的迹象。The micro drill bit was subjected to a fracture strength test experiment. Through the test, it was found that the fracture strength of the micro drill bit was 26N. Another sample was taken for a micro drill bit drilling test. When the number of holes was 4,000, the flank surface of the micro drill bit was observed to be coated. The bond between the layer and the substrate was good and no signs of coating peeling were found.
实施例4Example 4
本实施例与实施例1的区别在于:酸刻蚀液中硝酸、盐酸和水的体积比为1:3:14。The difference between this embodiment and Embodiment 1 is that the volume ratio of nitric acid, hydrochloric acid and water in the acid etching solution is 1:3:14.
通过扫描电子显微镜对含金刚石涂层的微细钻头进行观察,发现涂层均匀地沉积在微细钻头表面上,结晶性好,能清晰地看到棱角清晰的金刚石晶体。The micro drill bit containing diamond coating was observed through a scanning electron microscope and it was found that the coating was uniformly deposited on the surface of the micro drill bit, with good crystallinity, and diamond crystals with clear edges and corners could be clearly seen.
将预处理后的微细钻头进行断裂强度测试实验,通过测试得其断裂强度为32N;将微细钻头进行钻孔测试,当钻孔的数目为4000个时,通过扫描电子显微镜观察微细钻头的后刀面发现涂层与基体之间结合良好,并没有发现涂层剥落的迹象。The pretreated micro drill bit was subjected to a fracture strength test experiment, and the fracture strength was found to be 32N. The micro drill bit was tested for drilling. When the number of holes was 4,000, the back cutter of the micro drill bit was observed through a scanning electron microscope. It was found that the bonding between the coating and the substrate was good, and no signs of coating peeling were found.
实施例5Example 5
本实施例与实施例1的区别在于:第一次酸刻蚀时间为20s;碱刻蚀时间为2min;第二 次酸刻蚀时间为40s。The difference between this embodiment and Embodiment 1 is that: the first acid etching time is 20s; the alkali etching time is 2min; the second The secondary acid etching time is 40s.
通过扫描电子显微镜对含金刚石涂层的微细钻头进行观察,发现涂层均匀地沉积在微细钻头表面上,结晶性好,能清晰地看到棱角清晰的金刚石晶体。The micro drill bit containing diamond coating was observed through a scanning electron microscope and it was found that the coating was uniformly deposited on the surface of the micro drill bit, with good crystallinity, and diamond crystals with clear edges and corners could be clearly seen.
将预处理后的微细钻头进行断裂强度测试实验,通过测试得其断裂强度为25N;将微细钻头进行钻孔测试,当钻孔的数目为4000个时,通过扫描电子显微镜观察微细钻头的后刀面发现涂层与基体之间结合良好,并没有发现涂层剥落的迹象。The pretreated micro drill bit was subjected to a fracture strength test experiment, and the fracture strength was found to be 25N. The micro drill bit was tested for drilling. When the number of holes was 4,000, the back cutter of the micro drill bit was observed through a scanning electron microscope. It was found that the bonding between the coating and the substrate was good, and no signs of coating peeling were found.
对比例1Comparative example 1
本对比例与实施例1的区别在于:第一次酸刻蚀时间为1min;碱刻蚀时间为4min;第二次酸刻蚀时间为2min。The difference between this comparative example and Example 1 is that: the first acid etching time is 1 min; the alkali etching time is 4 min; and the second acid etching time is 2 min.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为16N;另取样品做微细钻头钻孔测试,当钻孔的数目为600个时,出现断针现象。The micro drill was subjected to a fracture strength test experiment, and the test showed that the fracture strength of the micro drill was 16N. Another sample was taken for a micro drill drilling test. When the number of holes was 600, needle breakage occurred.
对比例2Comparative example 2
本对比例与实施例1的区别在于:碱刻蚀时间为15min。The difference between this comparative example and Example 1 is that the alkali etching time is 15 minutes.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为18N;另取样品做微细钻头钻孔测试,当钻孔的数目为1000个时,横刃处出现涂层剥落的现象及黏屑严重,如图4所示。The micro drill bit was subjected to a fracture strength test experiment. The test showed that the fracture strength of the micro drill bit was 18N. Another sample was taken for a micro drill bit drilling test. When the number of holes was 1,000, the coating peeled off at the chisel edge. and severe sticky debris, as shown in Figure 4.
对比例3Comparative example 3
本对比例与实施例1的区别在于:碱刻蚀时间为1min。The difference between this comparative example and Example 1 is that the alkali etching time is 1 minute.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为24N;另取样品做微细钻头钻孔测试,当钻孔的数目为2000个时,横刃处出现涂层剥落的现象。 The micro drill bit was subjected to a fracture strength test experiment. The test showed that the fracture strength of the micro drill bit was 24N. Another sample was taken for a micro drill bit drilling test. When the number of holes was 2000, the coating peeled off at the chisel edge. .
对比例4Comparative example 4
本对比例与实施例1的区别在于:第一次酸刻蚀时间为5s。The difference between this comparative example and Example 1 is that the first acid etching time is 5 seconds.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为22N;另取样品做微细钻头钻孔测试,当钻孔的数目为2000个时,横刃处出现涂层剥落的现象。The micro drill bit was subjected to a fracture strength test experiment. The test showed that the fracture strength of the micro drill bit was 22N. Another sample was taken for a micro drill bit drilling test. When the number of holes was 2000, the coating peeled off at the chisel edge. .
对比例5Comparative example 5
本对比例与实施例1的区别在于:第一次酸刻蚀时间为1min。The difference between this comparative example and Example 1 is that the first acid etching time is 1 minute.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为21N;另取样品做微细钻头钻孔测试,当钻孔的数目为2000个时,出现断针现象。The micro drill was subjected to a fracture strength test experiment, and the test showed that the fracture strength of the micro drill was 21N. Another sample was taken for a micro drill drilling test. When the number of holes was 2,000, needle breakage occurred.
对比例6Comparative example 6
本对比例与实施例1的区别在于:第二次酸刻蚀时间为5s。The difference between this comparative example and Example 1 is that the second acid etching time is 5 seconds.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为24N;另取样品做微细钻头钻孔测试,当钻孔的数目为2000个时,横刃处出现涂层剥落的现象。The micro drill bit was subjected to a fracture strength test experiment. The test showed that the fracture strength of the micro drill bit was 24N. Another sample was taken for a micro drill bit drilling test. When the number of holes was 2000, the coating peeled off at the chisel edge. .
对比例7Comparative example 7
本对比例与实施例1的区别在于:第二次酸刻蚀时间为2min。The difference between this comparative example and Example 1 is that the second acid etching time is 2 minutes.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为22N;另取样品做微细钻头钻孔测试,当钻孔的数目为1000个时,出现断针现象。The micro drill was subjected to a fracture strength test experiment, and the test showed that the fracture strength of the micro drill was 22N. Another sample was taken for a micro drill drilling test. When the number of holes was 1,000, needle breakage occurred.
对比例8Comparative example 8
本对比例与实施例1的区别在于:微细钻头的直径为0.25mm。The difference between this comparative example and Example 1 is that the diameter of the micro drill bit is 0.25 mm.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为18N;另取样品做微细钻头钻孔测试,当钻孔的数目为1000个时,出现断针现象。 The micro drill was subjected to a fracture strength test, and the test showed that the fracture strength of the micro drill was 18N. Another sample was taken for a micro drill drilling test. When the number of holes was 1,000, needle breakage occurred.
对比例9Comparative example 9
本对比例与实施例1的区别在于:微细钻头的直径为0.8mm。The difference between this comparative example and Example 1 is that the diameter of the micro drill bit is 0.8 mm.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为24N;另取样品做微细钻头钻孔测试,当钻孔的数目为2000个时,横刃处出现涂层剥落的现象。The micro drill bit was subjected to a fracture strength test experiment. The test showed that the fracture strength of the micro drill bit was 24N. Another sample was taken for a micro drill bit drilling test. When the number of holes was 2000, the coating peeled off at the chisel edge. .
对比例10Comparative example 10
本对比例与实施例1的区别在于:微细钻头的晶粒度为0.1μm。The difference between this comparative example and Example 1 is that the grain size of the micro drill is 0.1 μm.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为25N;另取样品做微细钻头钻孔测试,当钻孔的数目为2000个时,横刃处出现涂层剥落的现象。The micro drill bit was subjected to a fracture strength test experiment. The test showed that the fracture strength of the micro drill bit was 25N. Another sample was taken for a micro drill bit drilling test. When the number of holes was 2,000, the coating peeled off at the chisel edge. .
对比例11Comparative example 11
本对比例与实施例1的区别在于:微细钻头的晶粒度为2μm。The difference between this comparative example and Example 1 is that the grain size of the micro drill is 2 μm.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为22N;另取样品做微细钻头钻孔测试,当钻孔的数目为2000个时,横刃处出现涂层剥落的现象。The micro drill bit was subjected to a fracture strength test experiment. The test showed that the fracture strength of the micro drill bit was 22N. Another sample was taken for a micro drill bit drilling test. When the number of holes was 2000, the coating peeled off at the chisel edge. .
对比例12Comparative example 12
本对比例与实施例1的区别在于:微细钻头的含钴量为2wt%。The difference between this comparative example and Example 1 is that the cobalt content of the micro drill bit is 2wt%.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为16N;另取样品做微细钻头钻孔测试,当钻孔的数目为1000个时,横刃处出现涂层剥落的现象。The micro drill bit was subjected to a fracture strength test experiment. The test showed that the fracture strength of the micro drill bit was 16N. Another sample was taken for a micro drill bit drilling test. When the number of holes was 1,000, the coating peeled off at the chisel edge. .
对比例13Comparative example 13
本对比例与实施例1的区别在于:微细钻头的含钴量为10wt%。The difference between this comparative example and Example 1 is that the cobalt content of the micro drill bit is 10 wt%.
将微细钻头进行断裂强度测试实验,通过测试得出微细钻头的断裂强度为24N;另取样品做微细钻头钻孔测试,当钻孔的数目为1000个时,横刃处出现涂层剥落的现象。 The micro drill was subjected to a fracture strength test, and the test showed that the fracture strength of the micro drill was 24N. Another sample was taken for a micro drill drilling test. When the number of holes was 1,000, the coating peeled off at the chisel edge. .
综上所述,本申请提供的适合微细钻头的CVD金刚石涂层预处理工艺通过优化后的三步法化学刻蚀工艺能在不显著弱化微细钻头的断裂强度基础上,提高微细钻头与涂层间的附着性能,增强了基体与金刚石涂层之间的机械咬合力。相比于传统的化学刻蚀方法,优化后的三步法刻蚀工艺能有效缩短处理时间,提高刻蚀效率。In summary, the CVD diamond coating pretreatment process suitable for micro drill bits provided by this application can improve the fracture strength of micro drill bits and coatings without significantly weakening the fracture strength of micro drill bits through an optimized three-step chemical etching process. The adhesion performance between the substrate and the diamond coating enhances the mechanical bite force between the substrate and the diamond coating. Compared with traditional chemical etching methods, the optimized three-step etching process can effectively shorten the processing time and improve etching efficiency.
以上仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。 The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection scope of the present invention.

Claims (10)

  1. 一种金刚石涂层微细钻头的制备方法,其特征在于,包括以下步骤:A method for preparing a diamond-coated micro drill bit, which is characterized by including the following steps:
    在沉积金刚石涂层之前,将微细钻头进行化学预处理;Chemically pretreating micro-fine drill bits before depositing the diamond coating;
    所述微细钻头的直径为0.35-0.75mm,晶粒度为0.3-1.0μm,含钴量为4-8wt%;The diameter of the micro drill bit is 0.35-0.75mm, the grain size is 0.3-1.0μm, and the cobalt content is 4-8wt%;
    化学预处理包括依次进行的第一次酸刻蚀、碱刻蚀以及第二次酸刻蚀;Chemical pretreatment includes the first acid etching, alkali etching and the second acid etching in sequence;
    其中,第一次酸刻蚀所用的酸刻蚀液和第二次酸刻蚀所用的酸刻蚀液均独立地包括体积比为1:2-4:10-15的硝酸、盐酸和水;碱刻蚀所用的碱刻蚀液包括体积比为1:1:10的铁氰化钾、硝酸钾和水;Wherein, the acid etching liquid used for the first acid etching and the acid etching liquid used for the second acid etching independently include nitric acid, hydrochloric acid and water in a volume ratio of 1:2-4:10-15; The alkali etching solution used in alkali etching includes potassium ferricyanide, potassium nitrate and water in a volume ratio of 1:1:10;
    第一次酸刻蚀时间为10-30s;碱刻蚀时间为2-6min;第二次酸刻蚀时间为10-50s。The first acid etching time is 10-30s; the alkali etching time is 2-6min; the second acid etching time is 10-50s.
  2. 根据权利要求1所述的制备方法,其特征在于,所述微细钻头的材质为硬质合金,优选为WC硬质合金;The preparation method according to claim 1, characterized in that the material of the micro drill bit is cemented carbide, preferably WC cemented carbide;
    和/或,所述金刚石涂层所含的金刚石晶粒包括微米晶、纳米晶或由微米晶和纳米晶共同组成的梯度晶。And/or, the diamond grains contained in the diamond coating include micron crystals, nanocrystals or gradient crystals composed of micron crystals and nanocrystals.
  3. 根据权利要求1所述的制备方法,其特征在于,化学预处理之前,还包括将所述微细钻头进行清洗;The preparation method according to claim 1, characterized in that, before chemical pretreatment, it also includes cleaning the micro drill bit;
    优选地,将所述微细钻头置于有机溶剂中进行超声清洗;Preferably, the micro drill bit is placed in an organic solvent for ultrasonic cleaning;
    优选地,所述有机溶剂包括无水乙醇、丙酮和异丙醇中的至少一种;Preferably, the organic solvent includes at least one of absolute ethanol, acetone and isopropyl alcohol;
    优选地,超声清洗是于40-60℃的条件下进行20-40min;Preferably, ultrasonic cleaning is performed at 40-60°C for 20-40 minutes;
    优选地,化学预处理之前,还包括将超声清洗后的微细钻头进行干燥;Preferably, before the chemical pretreatment, it also includes drying the ultrasonic cleaned micro drill bit;
    优选地,干燥是于纯度不低于99.99%的氮气氛围下进行。 Preferably, drying is performed under a nitrogen atmosphere with a purity of not less than 99.99%.
  4. 根据权利要求1所述的制备方法,其特征在于,在沉积金刚石涂层之前,还包括将化学预处理后的微细钻头进行种植籽晶处理;The preparation method according to claim 1, characterized in that, before depositing the diamond coating, it also includes seeding the chemically pretreated micro drill bit;
    优选地,种植籽晶处理包括:将化学预处理后的微细钻头于含有金刚石粉末的处理溶液中进行超声波振动处理;Preferably, the seed crystal planting treatment includes: subjecting the chemically pretreated micro drill bit to ultrasonic vibration treatment in a treatment solution containing diamond powder;
    优选地,所述处理溶液由无水酒精与纳米金刚石粉按1L:0.3-0.5g的比例配置而得;Preferably, the treatment solution is prepared from anhydrous alcohol and nanodiamond powder in a ratio of 1L: 0.3-0.5g;
    优选地,所述纳米金刚石粉的粒径为1-4μm;Preferably, the particle size of the nanodiamond powder is 1-4 μm;
    优选地,种植籽晶处理的时间为10-15min。Preferably, the time for planting seed crystals is 10-15 minutes.
  5. 根据权利要求1或2所述的制备方法,其特征在于,沉积金刚石涂层采用化学气相沉积方式进行。The preparation method according to claim 1 or 2, characterized in that the deposition of the diamond coating is carried out by chemical vapor deposition.
  6. 根据权利要求5所述的制备方法,其特征在于,当所需沉积的金刚石涂层的晶粒为微米晶时,沉积条件包括:热丝温度为2000-2200℃,热丝-基体距离为18-22mm,衬底温度为800-850℃,CH4的流量为50-70sccm,H2的流量为17000-19000sccm,气压为5-10mbar,沉积时间为8-20h。The preparation method according to claim 5, characterized in that when the crystal grains of the diamond coating to be deposited are micron crystals, the deposition conditions include: the hot wire temperature is 2000-2200°C, and the hot wire-substrate distance is 18 -22mm, the substrate temperature is 800-850℃, the flow rate of CH4 is 50-70sccm, the flow rate of H2 is 17000-19000sccm, the air pressure is 5-10mbar, and the deposition time is 8-20h.
  7. 根据权利要求5所述的制备方法,其特征在于,当所需沉积的金刚石涂层的晶粒为纳米晶时,沉积条件包括:热丝温度为2000-2200℃,热丝-基体距离为18-22mm,衬底温度为800-850℃,CH4的流量为20-40sccm,H2的流量为8000-10000sccm,气压为1-5mbar,沉积时间为8-20h。The preparation method according to claim 5, characterized in that when the crystal grains of the diamond coating to be deposited are nanocrystals, the deposition conditions include: the hot wire temperature is 2000-2200°C, and the hot wire-substrate distance is 18 -22mm, the substrate temperature is 800-850℃, the flow rate of CH4 is 20-40sccm, the flow rate of H2 is 8000-10000sccm, the air pressure is 1-5mbar, and the deposition time is 8-20h.
  8. 根据权利要求5所述的制备方法,其特征在于,当所需沉积的金刚石涂层的晶粒为梯度晶时,沉积条件包括:热丝温度为2000-2200℃,热丝-基体距离为18-22mm,衬底温度为800-850℃,CH4的流量为30-165sccm,H2的流量为8000-10000sccm,气压为1-5mbar,沉 积时间为8-20h。The preparation method according to claim 5, characterized in that when the grains of the diamond coating to be deposited are gradient crystals, the deposition conditions include: the hot wire temperature is 2000-2200°C, and the hot wire-substrate distance is 18 -22mm, the substrate temperature is 800-850℃, the flow rate of CH4 is 30-165sccm, the flow rate of H2 is 8000-10000sccm, the air pressure is 1-5mbar, sink The accumulation time is 8-20h.
  9. 一种金刚石涂层微细钻头,其特征在于,经权利要求1-8任一项所述的制备方法制备而得。A diamond-coated micro drill bit, characterized in that it is prepared by the preparation method described in any one of claims 1 to 8.
  10. 如权利要求9所述的金刚石涂层微细钻头的应用,其特征在于,所述金刚石涂层微细钻头用于线路板加工;The application of the diamond-coated micro drill bit according to claim 9, characterized in that the diamond-coated micro drill bit is used for circuit board processing;
    优选地,所述线路板为含有铜箔和/或PTFE和/或陶瓷填料的5G通讯用PCB线路板。 Preferably, the circuit board is a 5G communication PCB circuit board containing copper foil and/or PTFE and/or ceramic filler.
PCT/CN2023/123688 2022-11-16 2023-10-10 Diamond coating micro drill bit, and preparation method therefor and use thereof WO2024012611A1 (en)

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