WO2023245882A1 - 变距结构 - Google Patents

变距结构 Download PDF

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Publication number
WO2023245882A1
WO2023245882A1 PCT/CN2022/118598 CN2022118598W WO2023245882A1 WO 2023245882 A1 WO2023245882 A1 WO 2023245882A1 CN 2022118598 W CN2022118598 W CN 2022118598W WO 2023245882 A1 WO2023245882 A1 WO 2023245882A1
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WO
WIPO (PCT)
Prior art keywords
vacuum chamber
variable pitch
component
docking
assembly
Prior art date
Application number
PCT/CN2022/118598
Other languages
English (en)
French (fr)
Inventor
戴佳
朱鹤囡
董雪迪
林佳继
Original Assignee
拉普拉斯(无锡)半导体科技有限公司
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Publication of WO2023245882A1 publication Critical patent/WO2023245882A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L23/00—Flanged joints
    • F16L23/02—Flanged joints the flanges being connected by members tensioned axially
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L23/00—Flanged joints
    • F16L23/16—Flanged joints characterised by the sealing means
    • F16L23/18—Flanged joints characterised by the sealing means the sealing means being rings

Definitions

  • the present application belongs to the field of photovoltaic equipment, and relates to, for example, a pitch-variable structure.
  • the core process of the heterojunction solar cell manufacturing process includes the thin film deposition process.
  • the thin film deposition process includes multiple coating processes such as I-type intrinsic amorphous silicon film, P-type amorphous silicon film, and N-type amorphous silicon film.
  • Each coating process During the process, the distance between the silicon wafer and the special gas spray pipe and heat source are different. Silicon wafer coating production lines usually adjust the distance by manually changing the installation tooling. This operation not only has low production efficiency, but also cannot realize automated assembly line production, and the overall production capacity is low.
  • the present application provides a variable distance structure, which is arranged on the vacuum chamber and can realize the adjustment of multiple distances (for example, the distance between the silicon wafer and the special gas spray device, the distance between the silicon wafer and the heat source).
  • variable pitch structure including a variable pitch power component, a variable pitch transmission component, a telescopic component and a docking component.
  • the variable pitch power component is connected to the variable pitch transmission component
  • the variable pitch transmission component is connected to the telescopic component
  • the telescopic component is connected to the docking component.
  • the components are connected, and the variable-pitch power component controls the movement of the carrier plate device through the variable-pitch transmission component, the telescopic component and the docking component.
  • FIG. 1 is a schematic diagram of the vacuum coating equipment of this application.
  • Figure 2 is a schematic assembly diagram of the vacuum chamber, variable pitch structure, carrier device and transmission structure of the present application;
  • Figure 3 is a schematic diagram of the carrier device and silicon wafer assembly of the present application.
  • FIG. 4 is a schematic diagram of the vacuum chamber of this application.
  • Figure 5 is a front view of the vacuum chamber of the present application.
  • Figure 6 is a top view of the vacuum chamber of the present application.
  • Figure 7 is a schematic diagram of the assembly of the transmission structure and carrier device of the present application.
  • Figure 8 is an enlarged schematic diagram of A in Figure 7;
  • Figure 9 is a side view of the transmission structure of the present application.
  • Figure 10 is an enlarged schematic diagram of B in Figure 7;
  • Figure 11 is a schematic diagram of the assembly of the transmission structure, carrier plate device and vacuum chamber of this application;
  • Figure 12 is a side view of the assembly of the transmission structure, carrier plate device and vacuum chamber of this application;
  • Figure 13 is a schematic diagram of the variable pitch structure of the present application.
  • Figure 14 is a schematic diagram of the assembly of the variable pitch structure and the carrier device of the present application.
  • Figure 15 is a schematic assembly diagram of the vacuum chamber, variable pitch structure and carrier device of the present application.
  • Figure 16 is a front view of the vacuum chamber in Embodiment 2 of the present application.
  • Transmission structure 41. Positioning support mechanism; 411 , bracket; 412, wheel mounting frame; 413, support wheel; 414, positioning wheel; 415, rack; 416, support plate; 42, power mechanism; 421, motor component; 422, magnetic fluid; 423, coupling; 424. Power gear; 425. Bearing seat; 426. Power rotating shaft; 43. Positioning mechanism; 431. Positioning bracket; 432. Positioning fixed plate; 433. Positioning rod; 8. Variable pitch structure; 81.
  • Variable pitch power component; 82 variable pitch transmission component; 821, screw nut; 822, screw rod; 823, fixed seat; 824, isolation plate; 83, telescopic component; 831, moving flange; 832, bellows; 833, fixed flange; 84 , docking component; 841, docking rod; 842, docking block; 85, mounting bracket; 86, first bearing; 87, sliding device; 872, fixed plate; 871, slider; 88, sensor; 150, sealing ring; 810. Motor; 1401. Inside the cavity; 1410. Front cavity door assembly; 1430. Rear cavity door assembly; 1480. Connection mechanism; 417. Support assembly; 430. Positioning assembly.
  • All directional indications (such as up, down, left, right, front, back, transverse, longitudinal, etc.) in the embodiments of this application are only used to explain the relative positional relationship, movement, etc. between the components in a specific posture. , if the specific posture changes, the directional indication also changes accordingly.
  • the parallel relationship referred to in the embodiments of this application may actually be an approximately parallel relationship
  • the vertical relationship may actually be an approximately vertical relationship
  • a vacuum coating equipment includes a heating device 2, a carrier device 3, a special gas spray device 5, a valve chamber 6, a process chamber, a transmission structure 4 and a variable pitch structure 8.
  • the heating device 2 is set to heat the process chamber so that the temperature of the process chamber reaches the reaction temperature of the silicon wafer 7 and the gas.
  • the carrier device 3 loads the silicon wafer 7.
  • the process chamber includes a preheating vacuum chamber 12 and a coating vacuum chamber. 1. Coating vacuum chamber 2. Carrier plate conversion vacuum chamber 16 and discharge heat dissipation vacuum chamber 19.
  • the valve chamber 6 is connected between the vacuum chambers of the process chamber.
  • the carrier plate conversion vacuum chamber 16 is connected to the coating Between the first vacuum chamber and the second coating vacuum chamber, the carrier switching vacuum chamber 16 is used for switching the coating surface of the silicon wafer.
  • the valve chamber 6, the coating vacuum chamber 1, the coating vacuum chamber 2 and the carrier plate conversion vacuum chamber 16 form a silicon wafer coating production line.
  • a silicon wafer coating production line Through a silicon wafer coating production line, the double-sided coating of the silicon wafer 7 and the conversion of the silicon wafer coating surface are realized. , reducing the space occupied by the silicon wafer coating production line.
  • the silicon wafer coating production line may also include a loading preheating vacuum chamber 12 and a discharging heat dissipation vacuum chamber 19 to realize the steps of preheating, coating, and The coating surface is converted to a complete coating process with unloading.
  • the y direction in FIG. 1 is the moving direction of the carrier device 3, and the x direction in FIG. 1 is perpendicular to the moving direction of the carrier device 3.
  • the process chamber includes a loading preheating vacuum chamber 12 composed of a plurality of vacuum chambers 14, a coating vacuum chamber 1, a coating vacuum chamber 2, a carrier plate conversion vacuum chamber 16 and an unloading heat dissipation vacuum chamber 19.
  • the coating The first vacuum chamber includes a first coating vacuum chamber 13 and a second coating vacuum chamber 15 .
  • the second coating vacuum chamber includes a third coating vacuum chamber 17 and a fourth coating vacuum chamber 18 .
  • the first coating vacuum chamber 13 The second coating vacuum chamber 15 is used for coating on one side of the silicon wafer 7, the third coating vacuum chamber 17 and the fourth coating vacuum chamber 18 are used for coating on the other side of the silicon wafer 7, between the vacuum chambers
  • a valve chamber 6 is provided.
  • the valve chamber 6 isolates adjacent vacuum chambers from each other to avoid process contamination.
  • the loading preheating vacuum chamber 12 is provided with a first valve 11, and the unloading and cooling vacuum chamber 19 is provided with a second valve 10. , the first valve 11 and the second valve 10 isolate the equipment from the atmospheric environment.
  • valve chamber 6 Load preheating vacuum chamber 12, valve chamber 6, first coating vacuum chamber 13, valve chamber 6, second coating vacuum chamber 15, valve chamber 6, carrier plate conversion vacuum chamber 16, valve chamber 6, third
  • the coating vacuum chamber 17, the valve chamber 6, the fourth coating vacuum chamber 18, the valve chamber 6 and the discharge heat dissipation vacuum chamber 19 are connected in sequence to form a production line of vacuum coating equipment.
  • the carrier device 3 for loading the silicon wafer 7 passes through the transmission structure 4 drives and runs along the production line, forming the running path of the carrier device 3.
  • the preheating vacuum chamber 12, the valve chamber 6, the first coating vacuum chamber 13, the valve chamber 6, and the second coating vacuum chamber 15 are loaded.
  • valve chamber 6, carrier plate conversion vacuum chamber 16, valve chamber 6, third coating vacuum chamber 17, valve chamber 6, fourth coating vacuum chamber 18, valve chamber 6 and discharge cooling vacuum chamber 19 are optional Distributed in the form of an assembly line, the running path of the carrier device 3 is shortened and the floor space of the equipment is reduced.
  • the heating device 2 includes a heater 21 and a heat source 22.
  • the loading preheating vacuum chamber 12, the coating vacuum chamber 1, the coating vacuum chamber 2 and the carrier conversion vacuum chamber 16 are provided with a pair of heaters 21.
  • a pair of heaters 21 It is arranged symmetrically with respect to the center line of the equipment. In this embodiment, the direction of the center line of the equipment is the y direction.
  • the center line of each vacuum chamber is collinear with the center line of the equipment.
  • the heat source 22 is arranged between the coating vacuum chamber one and the coating vacuum chamber two. On the center line, a pair of special gas spray devices 5 are provided in the coating vacuum chamber one and the coating vacuum chamber two, and the pair of special gas spray devices 5 are arranged symmetrically with respect to the heat source 22.
  • the transmission structure 4 runs through the production line, and there is a pair of transmission structures 4.
  • the pair of transmission structures 4 are arranged symmetrically with respect to the center line of the equipment.
  • One transmission structure 4 controls the operation of at least one carrier device 3, and at least one transmission structure 4 has A carrier device 3 is distributed along a running path.
  • the running path of the carrier device 3 is located between the special gas spray device 5 and the heater 21.
  • the special gas spray device 5 is used for spraying special gas.
  • the special gases mentioned above refer to special gases used in semiconductors, including, for example, nitrogen-based gases, silicon-based gases, oxygen and other special gases.
  • the loading preheating vacuum chamber 12 and the carrier plate conversion vacuum chamber 16 are sequentially distributed along the center line of the vacuum chamber to the direction outside the vacuum chamber.
  • the transmission structure 4 and the heater 21 are sequentially distributed.
  • the coating vacuum chamber The first and second coating vacuum chambers distribute the heat source 22, the special gas spray device 5, the transmission structure 4 and the heater 21 in sequence along the center line of the vacuum chamber to the direction outside the vacuum chamber.
  • the heater 21 of each vacuum chamber is , heat source 22 and special gas spray device 5 operate independently.
  • the carrier device 3 includes a frame 30, a clamping slot 31 and a clamping pin 32.
  • the silicon wafer 7 is arranged in the clamping slot 31 through the clamping pin 32. There is no large area of obstruction on both sides of the silicon wafer 7, which increases the coating The effective area ratio realizes the requirement of double-sided coating.
  • the size and quantity of silicon wafers 7 loaded in the carrier device 3 can be set according to the customer's production requirements.
  • the vacuum chamber 14 of this embodiment is a multifunctional vacuum chamber.
  • the vacuum chamber 14 can be configured to load a preheating vacuum chamber 12, a coating vacuum chamber 1, a coating vacuum chamber 2, a loading vacuum chamber
  • the plate converts the vacuum chamber 16 and the discharge and heat dissipation vacuum chamber 19.
  • the vacuum chamber 14 can be used for different processes of coating, thus meeting the needs of multi-functional use of the vacuum chamber.
  • the vacuum chamber 14 includes a chamber frame 140, a front chamber door assembly 1410 and a rear chamber door assembly 1430.
  • the front chamber door assembly 1410 and the rear chamber door assembly 1430 are arranged on both sides of the chamber frame 140.
  • the front chamber door assembly 1410 and the rear chamber door assembly 1410 are At least one of the door assemblies 1430 is configured as a multi-chamber door structure.
  • the front chamber door assembly 1410 and the rear chamber door assembly 1430 are distributed along the x direction.
  • the z direction in Figure 4 is the height direction of the vacuum chamber.
  • the y direction in Figure 4 is the moving direction of the carrier device 3.
  • the y direction is the height direction of the vacuum chamber. Longitudinal direction.
  • the cavity frame 140 is configured as a vertical square structure.
  • a process chamber is provided in the cavity frame 140.
  • the silicon wafer 7 is subjected to a coating process in the process chamber.
  • Partition plates 147 are provided on both sides of the cavity frame 140.
  • the plate 147 is provided with a beam frame 145.
  • the beam frames 145 on both sides can be optionally arranged symmetrically.
  • the beam frame 145 is provided with at least one reinforcing rib.
  • the beam frame 145 is provided with at least one dry pump docking flange 146 and at least one dry pump.
  • the docking flanges 146 are distributed along the height direction of the vacuum chamber.
  • the dry pump docking flange 146 is provided on the beam frame 145, which no longer interferes with the opening of the chamber door, thereby improving maintenance efficiency.
  • the cavity frame 140 is configured as a multi-cavity door structure on at least one side.
  • the front cavity door assembly 1410 is configured as a single-cavity door structure
  • the rear cavity door assembly 1430 is configured as a multi-cavity door structure
  • the front cavity door assembly 1410 is configured as a multi-cavity door.
  • the rear cavity door assembly 1430 is configured as a single cavity door structure
  • the front cavity door assembly 1410 and the rear cavity door assembly 1430 are both configured as a multi-chamber door structure.
  • connection mechanism 1480 is provided between the front door assembly 1410 and the cavity frame 140, and at least one connection mechanism 1480 is provided between the rear cavity door assembly 1430 and the cavity frame 140.
  • the connection mechanism 1480 can be a hinge. 148.
  • the front chamber door assembly 1410 includes at least one chamber door, and the at least one chamber door is distributed along the y direction.
  • the number of chamber doors is set to two, including a first chamber door 141 and a second chamber door 142.
  • the first chamber door 141 and The second cavity door 142 is distributed along the y direction;
  • the rear cavity door assembly 1430 includes at least one cavity door, and at least one cavity door is distributed along the y direction.
  • the number of cavity doors is set to two, including the third cavity door 143 and the fourth cavity door 143 .
  • the cavity door 144, the third cavity door 143 and the fourth cavity door 144 are distributed along the y direction; at least one of the front cavity door assembly 1410 and the rear cavity door assembly 1430 opens or closes the cavity door in the y direction, and the first cavity door 141 , the second cavity door 142, the third cavity door 143 and the fourth cavity door 144 are respectively connected to the cavity frame 140 through hinges 148, the first cavity door 141, the second cavity door 142, the third cavity door 143 and the fourth cavity
  • the number of hinges 148 on any chamber door in the door 144 can be optionally set to 3 pieces.
  • the 3 pieces of hinges 148 are evenly distributed along the height direction of the vacuum chamber to prevent the hinges 148 from deforming and ensure that the front chamber door assembly 1410 and the rear chamber door assembly 1430 Strength of connection to cavity frame 140.
  • the partition 147 is disposed between adjacent doors of at least one of the front door assembly 1410 and the rear door assembly 1430 .
  • the width of the cavity door in this embodiment is not greater than 1.5 meters (m), for example, 1.3 m, and the width direction of the cavity door is the y direction.
  • this embodiment The structure of the multi-cavity door reduces the mass of a single door, reduces the load on the hinge 148, and extends the service life of the hinge 148. At the same time, the size of the door is reduced, thereby reducing the difficulty of production and processing. Under the same conditions, The smaller size is less likely to deform, which can improve the strength and lifespan of the chamber door of this embodiment, and has better sealing performance, which can effectively ensure the vacuum degree of the vacuum chamber.
  • the first chamber door 141 and the second chamber door 142 of the front chamber door assembly 1410, and the third chamber door 143 and the fourth chamber door 144 of the rear chamber door assembly 1430 are opened simultaneously, which increases equipment maintenance. space, which is convenient for staff to operate and improves maintenance efficiency; the area occupied by the opening of the chamber door in this embodiment is half or less of the structure in the related art, which reduces the occupied area of the equipment.
  • the cavity frame 140, the front cavity door assembly 1410 and the rear cavity door assembly 1430 can be made of aluminum, aluminum alloy, stainless steel, etc.
  • the multi-cavity door structure of the vacuum chamber of this embodiment can be applied to the cavities of other equipment, not limited to vacuum coating equipment.
  • the transmission structure 4 includes a positioning support mechanism 41, a power mechanism 42 and a positioning mechanism 43.
  • the positioning support mechanism 41 includes a rack 415.
  • the rack 415 is provided on the carrier device 3.
  • the power mechanism 42 includes a power gear. 424, the rack 415 is meshed with the power gear 424.
  • the carrier device 3 includes a frame 30.
  • the frame 30 includes an upper frame plate 301 and a lower frame plate 302.
  • the upper frame plate 301 and the lower frame plate 302 are distributed along the up and down direction, and the up and down direction is the z direction in the figure.
  • the positioning support mechanism 41 includes a bracket 411, a support assembly 417, a rack 415 and a support plate 416.
  • the length direction of the bracket 411 is parallel to the moving direction of the carrier device 3.
  • the bracket 411 is arranged on the top of the vacuum chamber.
  • the support component 417 is provided with at least one support component 417 along the moving direction of the carrier device 3 and is provided on the bracket 411.
  • the support component 417 includes a wheel mounting bracket 412, a support wheel 413 and a positioning wheel 414.
  • the support wheel 413 and the positioning wheel 414 Provided on wheel mounting bracket 412.
  • the rack 415 and the support plate 416 are respectively arranged on both sides of the upper frame plate 301.
  • the length direction of the rack 415 is parallel to the moving direction of the carrier device 3.
  • At least one support plate 416 is distributed along the moving direction of the carrier device 3.
  • the bar 415 is on the same side as the positioning wheel 414, the support plate 416 and the support wheel 413 are on the same side.
  • the lower end surface of the rack 415 is provided with a clamping block, and the positioning wheel 414 is provided with a clamping groove.
  • the cross-section of the clamping block is consistent with the cross-sectional shape of the clamping slot.
  • the clamping block is set to a V-shaped structure
  • the slot is set to a V-shaped groove
  • the clamping block is buckled into the slot
  • the two form a slot connection
  • the lower end surface of the rack 415 is provided with a slot
  • the positioning wheel 414 is provided with a slot.
  • the two can still form a slot connection.
  • the positioning wheel 414 adopts a V-shaped wheel in the related art.
  • the clamping block of the rack 415 is set to a V-shaped structure.
  • the groove connection realizes the positioning of the board carrier device 3, so that the positioning of the board carrier device 3 no longer depends on the shape positioning, which improves the positioning accuracy of the board carrier device 3, reduces the processing difficulty of the overall processing part, and reduces the equipment cost.
  • the support wheel 413 is located on the lower side of the support plate 416. During the operation of the carrier device 3, the support wheel 413 and the support plate 416 remain in a fit state. The support wheel 413 supports the support plate 416. Through the connection between the rack 415 and the positioning wheel 414 The meshing effect and the support of the support wheel 413 and the support plate 416 realize the suspension support of the plate carrier device 3 .
  • the power mechanism 42 includes a motor assembly 421, a magnetic fluid 422, a coupling 423, a power gear 424, a bearing seat 425 and a power rotating shaft 426.
  • the chamber of the vacuum chamber is the working area and moving area of the silicon wafer 7.
  • the power rotating shaft 426 penetrates a pair of bearing seats 425 and is rotationally connected with the pair of bearing seats 425.
  • the power rotating shaft 426 The axis of is perpendicular to the moving direction of the carrier device 3.
  • a power gear 424 is provided on the outer surface of the power rotating shaft 426.
  • the power gear 424 meshes with the rack 415 to realize motion transmission.
  • One end of the power rotating shaft 426 communicates with the magnetic fluid 422 through a coupling 423.
  • the magnetic fluid 422 and the motor component 421 are connected through a fastening mechanism.
  • the axis of the power rotating shaft 426, the axis of the coupling 423, the axis of the magnetic fluid 422 and the axis of the motor component 421 are collinear.
  • the coupling The device 423, the power gear 424, the bearing seat 425 and the power rotating shaft 426 are located inside the vacuum chamber.
  • the motor assembly 421 and the magnetic fluid 422 are located outside the vacuum chamber.
  • the mounting surface 4221 of the magnetic fluid 422 is connected to the chamber frame 140 of the vacuum chamber. , the magnetic fluid 422 is used to isolate the inside and outside of the vacuum cavity to ensure the sealing within the cavity, and the motor assembly 421 transmits power to the inside of the vacuum cavity through the magnetic fluid 422.
  • the magnetic fluid 422 may be in the shape of a magnetically permeable metal cylinder.
  • the magnetic fluid 422 and the motor assembly 421 are connected through fastening mechanisms such as bolts.
  • the power mechanism 42 drives the plate carrier device 3 to move through the meshing effect of the power gear 424 and the rack 415.
  • the transmission efficiency of the power gear 424 and the rack 415 is higher than the transmission using a roller structure in the related art. efficiency, and the positioning accuracy of the power gear 424 and the rack 415 transmission is high.
  • the operating position of the carrier device 3 in the cavity has a small difference from the theoretical value, which is conducive to the refined management of the entire equipment.
  • the meshing of the power gear 424 and the rack 415 It is located at the top of the carrier device 3. For large carrier boards of mass production machines, the operational stability of the carrier device 3 is improved, effectively reducing the risk of silicon chip fragments.
  • At least one power mechanism 42 is provided, and at least one power mechanism 42 along the moving direction of the carrier device 3 is distributed in the vacuum chamber 14 .
  • a support component 417 is distributed on the bracket 411 to ensure the positioning function and power transmission requirements of the carrier device 3 during operation.
  • the positioning mechanism 43 is arranged at the bottom of the vacuum chamber. As shown in Figure 7, the distance between the positioning mechanism 43 and the positioning support mechanism 41 matches the size of the carrier device 3 in the height direction of the vacuum chamber.
  • the positioning support The mechanism 41 is connected to the upper frame plate 301 of the plate carrier device 3 to position and support the upper end of the plate carrier device 3.
  • the positioning mechanism 43 is connected to the lower frame plate 302 of the plate carrier device 3 to position the lower end of the plate carrier device 3.
  • the positioning mechanism 43 includes a positioning bracket 431 and a positioning assembly 430.
  • the length direction of the positioning bracket 431 is parallel to the moving direction of the carrier device 3.
  • the positioning bracket 431 is connected to the bottom inside the vacuum chamber 14, and the positioning bracket 431 is arranged parallel to the bracket 411. .
  • the positioning component 430 is provided with at least one positioning component 430 arranged on the positioning bracket 431 along the moving direction of the carrier device 3.
  • the positioning component 430 includes a positioning fixed plate 432 and a pair of positioning rods 433.
  • the positioning rod 433 is provided with a roller 434.
  • a pair of positioning rods 433 are symmetrically located on both sides of the positioning fixed plate 432. The distance between the rollers 434 is greater than the width of the lower frame plate 302.
  • the lower frame plate 302 of the plate loading device 3 moves at The pair of positioning rods 433 of the positioning assembly 430 move between each other, and the rollers 434 contact the end surface of the lower frame plate 302, thereby positioning and limiting the movement of the plate carrier device 3, and keeping the plate carrier device 3 stable during the movement.
  • the lower frame plate 302 of the carrier device 3 can accurately enter between the pair of positioning rods 433 of the positioning assembly 430.
  • the lower frame plate 302 is provided with a pointed structure at both ends of the moving direction, that is, the two ends of the lower frame plate 302 are The size is gradually reduced, so that it can be easily and accurately entered between a pair of positioning rods 433 between different positioning assemblies 430 .
  • the transmission structure 4 uses the support wheel 413 to support the support plate 416 and the positioning wheel 414 to support the rack 415 to support and position the plate carrier device 3, thereby realizing the suspension and support of the plate carrier device 3, and Through the positioning effect of the positioning mechanism 43 on the lower frame plate 302, the carrier device 3 is positioned and limited.
  • the motor assembly 421 starts to drive the power gear 424 to rotate through the magnetic fluid 422 and the coupling 423.
  • the power gear 424 meshes with the rack 415. Connection, the rotation of the power gear 424 drives the rack 415 to run along the moving space, thereby realizing the movement of the carrier device 3 between different vacuum chambers.
  • the transmission structure 4 of this embodiment can be used for power transmission of its equipment, and is not limited to vacuum coating equipment.
  • variable-pitch power component 81 adjusts the distance between the silicon wafer 7 carried by the carrier device 3 and at least one of the special gas spray device 5 and the heat source 22 through the variable-pitch transmission component 82 , the telescopic component 83 and the docking component 84 Pitch.
  • the variable pitch structure 8 includes a variable pitch power component 81, a variable pitch transmission component 82, a telescopic component 83 and a docking component 84.
  • the variable pitch power component 81 is connected to the variable pitch transmission component 82.
  • the variable pitch transmission component 82 is connected to the telescopic component 83, and the telescopic component 83 is connected to the docking component 84.
  • variable-pitch power component 81 controls the movement of the carrier device 3 through the variable-pitch transmission component 82, the telescopic component 83, and the docking component 84, for example, controlling the carrier device 3
  • the distance between the loaded silicon wafer 7 and at least one of the special gas spray device 5 and the heat source 22 is set.
  • the variable pitch structure 8 is arranged on the vacuum chamber 14.
  • the variable pitch structure 8 also includes a mounting bracket 85.
  • the variable pitch power component 81 and the variable pitch transmission component 82 are arranged on the mounting bracket 85.
  • the mounting bracket 85 is arranged outside the vacuum chamber 14. On the side, the outer surface of the vacuum chamber 14 is located outside the vacuum chamber 14 .
  • the variable-pitch power assembly 81 includes a motor 810 .
  • the output shaft of the motor 810 is connected to the variable-pitch transmission assembly 82 through a first bearing 86 and transmits power to the variable-pitch transmission assembly 82 .
  • variable pitch transmission assembly 82 includes a screw nut 821, a screw rod 822 and a fixed seat 823.
  • the fixed seat 823 is provided on the mounting bracket 85.
  • the first end of the screw rod 822 is rotationally connected to the fixed seat 823.
  • the screw rod 822 is The second end is connected to the variable pitch power assembly 81 .
  • the variable pitch transmission assembly 82 includes a screw nut 821, a screw rod 822 and a pair of fixed seats 823.
  • the pair of fixed seats 823 are provided on the mounting bracket 85.
  • the variable pitch power assembly 81 transmits power to the screw rod 822 through the first bearing 86, and the screw nut 821 is connected to the first bearing 86.
  • the screw rod 822 is spirally connected, and the screw nut 821 is slidingly connected to the mounting bracket 85. When the screw rod 822 rotates, the screw nut 821 moves along the axial direction of the screw rod 822.
  • the variable-pitch transmission assembly 82 also includes an isolation plate 824.
  • the isolation plate 824 is connected to the installation bracket 85 and the variable-pitch power assembly 81.
  • the isolation plate 824, the installation bracket 85 and the variable-pitch power assembly 81 form an isolation space.
  • the wires of the variable-pitch transmission assembly 82 The lever nut 821, the screw rod 822 and a pair of fixed seats 823 are located in the isolation space, and the isolation plate 824 plays a certain protective role on the variable pitch transmission assembly 82.
  • the variable pitch structure 8 also includes at least one sensor 88 , which is configured to sense the position of the screw nut 821 and prevent the screw nut 821 from colliding with the fixed base 823 .
  • the telescopic assembly 83 includes a movable flange 831, a bellows 832 and a fixed flange 833.
  • the two ends of the bellows 832 are connected to the movable flange 831 and the fixed flange 833.
  • the fixed flange 833 is connected to the outer surface of the vacuum chamber 14.
  • the flange 149 is connected, and a sealing ring is provided between the fixed flange 833 and the butt flange 149 to ensure the sealing between the bellows 832 and the vacuum chamber 14, so that the bellows 832 and the vacuum chamber 14 are in the same vacuum environment.
  • the moving method The flange 831 is connected to the screw nut 821, and the telescopic assembly 83 is located outside the vacuum chamber 14.
  • the docking assembly 84 includes a docking rod 841 and a docking block 842.
  • the first end of the docking rod 841 is inserted into the bellows 832 and connected to the moving flange 831.
  • the second end of the docking rod 841 is connected to the docking block 842.
  • the docking block 842 is located in the vacuum chamber 14 Internally, the docking block 842 is connected to the carrier device 3 .
  • the carrier device 3 loads the silicon wafer 7.
  • the carrier device 3 is arranged in the cavity 1401 of the vacuum chamber 14 through the positioning support mechanism 41 and the positioning mechanism 43.
  • the positioning support mechanism 41 includes a bracket 411.
  • the positioning mechanism 43 includes a positioning bracket 431.
  • the bracket 411 and the length direction of the positioning bracket 431 are parallel to the running path of the carrier device 3 between different vacuum chambers 14 .
  • the docking block 842 is connected to the bracket 411 and the positioning bracket 431 respectively.
  • a sliding device 87 is provided between the bracket 411 and the positioning bracket 431 and the vacuum chamber 14.
  • the sliding device 87 includes a fixed plate 872 and a sliding block 871. The fixed plate 872 and The vacuum chamber 14 is connected, the slider 871 is connected to the bracket 411 and the positioning bracket 431 respectively, and the slider 871 is slidingly connected to the fixed plate 872.
  • variable pitch power component 81 is started to drive the screw rod 822 to rotate.
  • the rotation of the screw rod 822 causes the screw nut 821 to move along the axial direction of the screw rod 822.
  • the movement of the screw nut 821 simultaneously drives the moving flange 831.
  • the movement of the movable flange 831 drives the docking block 842 to move, and the movement of the docking block 842 drives the bracket 411 to move.
  • the plate carrier device 3 is suspended and supported on the bracket 411. The movement of the bracket 411 drives the plate carrier device 3 to move synchronously.
  • the distance between the silicon wafer 7 and the special gas spray device is adjusted through the variable pitch transmission assembly 82.
  • the distance between at least one of the shower device 5 and the heat source 22 is adjusted.
  • the adjustment range is wide, which can meet the distance requirements of different silicon wafers and different processes; in this embodiment, the fixed flange 833 of the telescopic component 83 and the vacuum chamber
  • the butt flange 149 on the outer side of 14 is connected.
  • a sealing ring is provided between the fixed flange 833 and the butt flange 149 to ensure the sealing of the bellows 832 and the vacuum chamber 14.
  • the movable flange 831 is connected to the variable pitch transmission assembly 82.
  • the carrier device 3 is reciprocated along the axial direction to adjust the distance between the silicon wafer 7 and at least one of the special gas spray device 5 and the heat source 22 .
  • variable pitch structures 8 there are multiple variable pitch structures 8.
  • the multiple variable pitch structures 8 are distributed at the upper and lower ends of the vacuum chamber 14 along the height direction of the vacuum chamber 14.
  • the multiple variable pitch structures 8 are installed along the carrier plate.
  • the running path distribution of 3 ensures that the carrier device 3 remains stable during the spacing adjustment process.
  • variable pitch structure 8 of this embodiment can be used for variable pitch adjustment of its equipment, and is not limited to vacuum coating equipment.
  • a pair of carrier devices 3 are generally disposed in the vacuum chamber 14.
  • the carrier devices 3 are arranged symmetrically with respect to the axis of the vacuum chamber 14, and a plurality of variable pitch structures 8 are respectively provided on the chamber doors of the vacuum chamber 14.
  • a plurality of pitch-variable structures 8 respectively adjust the distance between a pair of carrier plate devices 3 and at least one of the special gas spray device 5 and the heat source 22 .
  • the docking block 842 of the docking assembly 84 may be directly connected to the carrier device 3 .
  • the silicon wafer 7 is loaded on the carrier device 3.
  • the positioning support mechanism 41 suspends, supports and positions the carrier device 3.
  • the positioning mechanism 43 positions and limits the carrier device 3 below.
  • the power mechanism 42 The carrier device 3 is driven to move along the operating path, and the power mechanism 42 transports the carrier device 3 to the loading preheating vacuum chamber 12.
  • the heater 21 in the loading preheating vacuum chamber 12 is started, and the heat radiation of the heater 21 affects the load.
  • the silicon wafers 7 loaded in the plate device 3 are preheated before the coating process; the power mechanism 42 transports the plate carrier device 3 to the first coating vacuum chamber 13, and the transmission structure 4 is started to transfer the silicon wafers 7 loaded in the plate carrier device 3 to the first coating vacuum chamber 13.
  • the distance between the special gas spray device 5 and the heat source 22 in the first coating vacuum chamber 13 is adjusted to the set value.
  • the heater 21 in the first coating vacuum chamber 13 is started, the heat source 22 is started, and the special gas spray device 5
  • the released special gas is decomposed by the heat source 22, and an intrinsic amorphous silicon film is coated on one side of the silicon wafer 7;
  • the power mechanism 42 transports the carrier device 3 to the second coating vacuum chamber 15, and the transmission structure 4 is started to move the carrier device 3.
  • the distance between the loaded silicon wafer 7 and the special gas spray device 5 and heat source 22 in the second coating vacuum chamber 15 is adjusted to the set value.
  • the heater 21 in the second coating vacuum chamber 15 is started, and the heat source 22 is started.
  • the special gas released by the special gas spray device 5 is decomposed by the heat source 22, and an N-type doped silicon-based film is plated on one side of the silicon wafer 7;
  • the power mechanism 42 transports the carrier device 3 to the carrier conversion vacuum chamber 16, carrying A conversion mechanism is provided in the plate conversion vacuum chamber 16.
  • the plate carrier device 3 on one side of the transmission structure 4 is converted to the other side transmission structure 4, and the positions of the plate carrier devices 3 on both sides of the transmission structure 4 are replaced.
  • the coated surface of the silicon wafer loaded in the carrier device 3 faces outside the cavity, and the uncoated surface faces the heat source 22; the power mechanism 42 transports the converted carrier device 3 to the third coating vacuum chamber 17, and the transmission structure 4 starts to The distance between the silicon wafer 7 loaded in the carrier device 3 and the special gas spray device 5 and heat source 22 in the third coating vacuum chamber 17 is adjusted to the set value, and the heater 21 in the third coating vacuum chamber 17 is started.
  • the heat source 22 is started, and the special gas released by the special gas spray device 5 is decomposed by the heat source 22, and an intrinsic amorphous silicon film is coated on the other side of the silicon wafer 7, that is, the uncoated side; the power mechanism 42 transports the carrier device 3 to the third
  • the fourth coating vacuum chamber 18, the transmission structure 4 is started, and the distance between the silicon wafer 7 loaded in the carrier device 3 and the special gas spray device 5 and heat source 22 in the fourth coating vacuum chamber 18 is adjusted to the set value.
  • the heater 21 in the four-coating vacuum chamber 18 is started, the heat source 22 is started, the special gas released by the special gas spray device 5 is decomposed by the heat source 22, and a P-type doped silicon-based film is plated on the other side of the silicon wafer 7; power mechanism 42.
  • a cooling structure is provided in the unloading heat dissipation vacuum chamber 19. The cooling structure provides normal temperature gas to dissipate and cool the silicon wafer.
  • the power mechanism 42 drives the carrier. Board device 3 flows out of the device.
  • This embodiment relies on the carrier device 3 capable of double-sided coating and the carrier switching vacuum chamber 16 to realize the function of double-sided coating of the silicon wafer 7 on a closed production line, and during the coating process, the silicon wafer 7 is placed on the carrier.
  • the conversion vacuum chamber 16 realizes the conversion of the silicon wafer coating surface, and the silicon wafer is no longer in contact with the atmosphere, eliminating the adverse effects of water vapor, oxygen, dust and other factors in the air on the performance of the silicon wafer 7, and improving the production quality of the silicon wafer 7 .
  • the overall vacuum chamber is distributed in the form of an assembly line, which shortens the operating path of the carrier device 3.
  • there is no need to add an additional automated turning mechanism to convert the silicon wafer coating surface which reduces equipment costs and saves equipment space. area, improves the usage efficiency of the customer's site, and achieves the effects of high equipment process integration, high equipment operation efficiency and low equipment cost.
  • connection methods that enable the rack 415 to cooperate with the positioning wheel 414 and make the rack 415 and the positioning wheel 414 relatively movable are also within the protection scope of this application.
  • Embodiment 1 the difference between this embodiment and Embodiment 1 is that in Embodiment 1, the first door 141 and the second door 142 of the front door assembly 1410 are distributed along the y direction, and the first door 141 and the second door 142 of the rear door assembly 1430 are distributed along the y direction.
  • the three chamber doors 143 and the fourth chamber door 144 are distributed along the y direction. At least one of the front chamber door assembly 1410 and the rear chamber door assembly 1430 opens or closes the chamber door in the y direction.
  • the front chamber door assembly The first cavity door 141 and the second cavity door 142 of 1410 are distributed along the z direction, the third cavity door 143 and the fourth cavity door 144 of the rear cavity door assembly 1430 are distributed along the z direction, the front cavity door assembly 1410 and the rear cavity door assembly 1430 are distributed along the z direction. At least one of 1430 opens or closes the chamber door in the z direction.
  • Embodiment 1 the difference between this embodiment and Embodiment 1 is that in Embodiment 1, the valve chamber 6, the coating vacuum chamber 1, the coating vacuum chamber 2 and the carrier conversion vacuum chamber 16 form a silicon wafer coating production line, while in this embodiment , the valve chamber 6, the coating vacuum chamber 1, the coating vacuum chamber 2 and the carrier conversion vacuum chamber 16 form multiple silicon wafer coating production lines, one production line can be used for coating on one side of the silicon wafer 7, and one growth line can be used for Coating on the other side of the silicon wafer 7.
  • the carrier plate conversion vacuum chamber 16 can also form a growth line for conversion of the silicon wafer coating surface.
  • the silicon wafer 7 is coated in the sealed carrier plate conversion vacuum chamber 16. After conversion, the silicon wafer 7 is no longer in contact with the atmosphere, eliminating the adverse effects of water vapor, oxygen, dust and other factors in the air on the performance of the silicon wafer 7, and improving the production quality of the silicon wafer 7.
  • variable-pitch transmission assembly 82 may adopt a rack-and-pinion transmission structure.
  • the gear and the rack are meshed and connected.
  • the rack is connected to the moving flange 831 .
  • the variable-pitch power assembly 81 drives the gear to rotate, and the gear drives the rack through meshing. Move, the movement of the rack drives the movement of the moving flange 831, and the subsequent spacing adjustment process is the same as in the first embodiment, and will not be described in detail here; or the variable pitch transmission assembly 82 can adopt a gear transmission belt transmission structure, and the gear drives the transmission belt transmission.
  • the moving method The flange 831 is arranged on the transmission belt, the variable pitch power assembly 81 drives the gear to rotate, the gear drives the transmission belt to move, the movement of the transmission belt drives the moving flange 831 to move, the subsequent spacing adjustment process is the same as in the first embodiment, and will not be described in detail here;
  • the pitch transmission component 82 can adopt a cam structure.
  • the variable pitch power component 81 is connected to the driving end of the cam, and the driven end of the cam is connected to the moving flange 831.
  • the variable pitch power component 81 drives the cam to rotate, and the driven end of the cam drives the moving method.
  • the orchid 831 moves, and the subsequent spacing adjustment process is the same as that in Embodiment 1, and will not be described again.
  • the telescopic assembly 83 may adopt a multi-layer sleeve structure, the outer sleeve is connected to the vacuum chamber 14, the inner sleeve is located inside the outer sleeve, and the inner sleeve is slidingly connected to the outer sleeve.
  • the first end of the inner sleeve is connected to the docking rod 841, and the second end of the inner sleeve is connected to the variable pitch transmission assembly 82, so that the docking rod 841 can be moved through the multi-layer sleeve structure.
  • This application uses a variable pitch transmission component and a telescopic component to adjust the distance between the silicon wafer carried by the carrier device and at least one of the special gas spray device and the heat source.
  • the adjustment range is wide and can meet the needs of different silicon wafers. , the spacing requirements of different processes, while achieving the technical effect of automatic spacing adjustment, improving production efficiency, and meeting the needs of automated assembly line production.
  • the fixed flange of the telescopic component is connected to the butt flange on the outer side of the vacuum chamber, and a sealing ring is set between the fixed flange and the butt flange to ensure the sealing between the bellows and the vacuum chamber and prevent movement.
  • the flange is connected to the variable-pitch transmission component to realize the reciprocating movement of the carrier device along the axial direction, thereby achieving the effect of adjusting the distance between the silicon wafer and at least one of the special gas spray device and the heat source.

Abstract

本申请公开了一种变距结构，包括变距动力组件、变距传动组件、伸缩组件和对接组件，变距动力组件与变距传动组件连接，变距传动组件与伸缩组件连接，伸缩组件与对接组件连接，变距动力组件通过变距传动组件、伸缩组件和对接组件控制载板装置承载的硅片与特气喷淋装置和热源中的至少之一的间距。

Description

变距结构
本公开要求在2022年6月23日提交中国专利局、申请号为202221584330.6的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。
技术领域
本申请属于光伏设备领域，例如涉及一种变距结构。
背景技术
异质结太阳能电池制造工序的核心工艺包括薄膜沉积工艺，薄膜沉积工艺包括I型本征非晶硅薄膜、P型非晶硅薄膜、N型非晶硅薄膜等多道镀膜工艺，每一道镀膜工艺中，硅片与特气喷淋管和热源距离都不相同。硅片镀膜生产线通常通过操作员手动更换安装工装来调节距离，这种操作不仅生产效率低，而且无法实现自动化流水线式生产，整体产能低。
在对硅片与特气喷淋管和热源距离调节过程中要保持密封，相关技术常采用真空密封气缸进行密封，但真空密封气缸只有一个初始位和一个动作位，只能实现两个位置的转换，无法实现距离的调节。
发明内容
本申请提供一种变距结构，设置于真空腔体上，可实现多段距离(比如：硅片与特气喷淋装置之间的距离，硅片与热源之间的距离)的调节。
本申请提供一种变距结构，包括变距动力组件、变距传动组件、伸缩组件和对接组件，变距动力组件与变距传动组件连接，变距传动组件与伸缩组件连接，伸缩组件与对接组件连接，变距动力组件通过变距传动组件、伸缩组件和对接组件控制载板装置移动。
附图说明
图1为本申请的真空镀膜设备示意图；
图2为本申请的真空腔体、变距结构、载板装置和传动结构装配示意图；
图3为本申请的载板装置和硅片装配示意图；
图4为本申请的真空腔体示意图；
图5为本申请的真空腔体主视图；
图6为本申请的真空腔体俯视图；
图7为本申请的传动结构与载板装置装配示意图；
图8为图7中A的放大示意图；
图9为本申请的传动结构侧视图；
图10为图7中B的放大示意图；
图11为本申请传动结构、载板装置与真空腔体装配示意图；
图12为本申请传动结构、载板装置与真空腔体装配侧视图；
图13为本申请的变距结构示意图；
图14为本申请的变距结构与载板装置装配示意图；
图15为本申请的真空腔体、变距结构与载板装置装配示意图；
图16为本申请的实施例二中真空腔体主视图。
图中标识：
2、加热装置；5、特气喷淋装置；6、阀腔；7、硅片；10、第二阀门；11、第一阀门；12、装载预热真空腔体；13、第一镀膜真空腔体；14、真空腔体；15、第二镀膜真空腔体；16、载板转换真空腔体；17、第三镀膜真空腔体；18、第四镀膜真空腔体；19、卸料散热真空腔体；140、腔体框架；141、第一腔门；142、第二腔门；143、第三腔门；144、第四腔门；145、梁架；146、干泵对接法兰；147、隔板；148、铰链；149、对接法兰；3、载板装置；30、框架；301、上框板；302、下框板；4、传动结构；41、定位支撑机构；411、支架；412、轮安装架；413、支撑轮；414、定位轮；415、齿条；416、支撑板；42、动力机构；421、电机组件；422、磁流体；423、联轴器；424、动力齿轮；425、轴承座；426、动力转轴；43、定位机构；431、定位支架；432、定位固定板；433、定位杆；8、变距结构；81、变距动力组件；82、变距传动组件；821、丝杠螺母；822、丝杆；823、固定座；824、隔离板；83、伸缩组件；831、移动法兰；832、波纹管；833、固定法兰；84、对接组件；841、对接杆；842、对接块；85、安装支架；86、第一轴承；87、滑动装置；872、固接板；871、滑块；88、传感器；150、密封圈；810、电机；1401、腔内；1410、前腔门组件；1430、后腔门组件；1480、连接机构；417、支撑组件；430、定位组件。
具体实施方式
以下通过实例说明本申请的实施方式，本领域技术人员可由本说明书所揭露的内容了解本申请的其他优点与功效。本申请还可以通过另外不同的实施方式加以实施或应用。
需要说明的是，以下实施例中所提供的图示仅以示意方式说明本申请的基本构想，遂图示中仅显示与本申请中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，在实际实施时各组件的型态、数量及比例可为一种随意的改变，且组件布局型态也可能更为复杂。
本申请实施例中所有方向性指示(诸如上、下、左、右、前、后、横向、纵向等)仅用于解释在某一特定姿态下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
因安装误差等原因，本申请实施例中所指的平行关系可能实际为近似平行关系，垂直关系可能实际为近似垂直关系。
实施例一：
如图1-15所示，一种真空镀膜设备，包括加热装置2、载板装置3、特气喷淋装置5、阀腔6、工艺腔体、传动结构4和变距结构8，加热装置2被设置为加热工艺腔体，使工艺腔体的温度达到硅片7与气体的反应温度，载板装置3装载硅片7，工艺腔体包括装载预热真空腔体12、镀膜真空腔体一、镀膜真空腔体二、载板转换真空腔体16和卸料散热真空腔体19，阀腔6连接在工艺腔体的各真空腔体之间，载板转换真空腔体16连接在镀膜真空腔体一和镀膜真空腔体二之间，载板转换真空腔体16用于硅片镀膜面的转换。
阀腔6、镀膜真空腔体一、镀膜真空腔体二和载板转换真空腔体16形成一条硅片镀膜生产线，通过一条硅片镀膜生产线实现硅片7双面镀膜以及硅片镀膜面的转换，减小了硅片镀膜生产线的占地空间，本实施例中硅片镀膜生产线还可包括装载预热真空腔体12和卸料散热真空腔体19，实现硅片7从预热、镀膜、镀膜面转换到卸料完整的镀膜工序。
本实施例中，图1中y方向为载板装置3的移动方向，图1中x方向与载板装置3移动方向垂直。
工艺腔体包括由多个真空腔体14构成的装载预热真空腔体12、镀膜真空腔体一、镀膜真空腔体二、载板转换真空腔体16和卸料散热真空腔体19，镀膜真 空腔体一包括第一镀膜真空腔体13和第二镀膜真空腔体15，镀膜真空腔体二包括第三镀膜真空腔体17和第四镀膜真空腔体18，第一镀膜真空腔体13、第二镀膜真空腔体15用于硅片7一侧的镀膜，第三镀膜真空腔体17和第四镀膜真空腔体18用于硅片7另一侧的镀膜，各真空腔体之间设置有阀腔6，阀腔6将相邻的真空腔体相互隔离，避免工艺污染，装载预热真空腔体12设置有第一阀门11，卸料散热真空腔体19设置有第二阀门10，第一阀门11和第二阀门10将设备与大气环境隔离。
装载预热真空腔体12、阀腔6、第一镀膜真空腔体13、阀腔6、第二镀膜真空腔体15、阀腔6、载板转换真空腔体16、阀腔6、第三镀膜真空腔体17、阀腔6、第四镀膜真空腔体18、阀腔6和卸料散热真空腔体19依次连接构成真空镀膜设备的生产线，装载硅片7的载板装置3通过传动结构4驱动并沿生产线运行，构成载板装置3的运行路径，本实施例装载预热真空腔体12、阀腔6、第一镀膜真空腔体13、阀腔6、第二镀膜真空腔体15、阀腔6、载板转换真空腔体16、阀腔6、第三镀膜真空腔体17、阀腔6、第四镀膜真空腔体18、阀腔6和卸料散热真空腔体19可选以流水线形式分布，缩短载板装置3的运行路径，减小设备的占地面积。
加热装置2包括加热器21和热源22，装载预热真空腔体12、镀膜真空腔体一、镀膜真空腔体二和载板转换真空腔体16设有一对加热器21，一对加热器21相对于设备中心线对称设置，本实施例设备中心线的方向为y方向，各真空腔体的中心线与设备中心线共线，热源22设置于镀膜真空腔体一和镀膜真空腔体二的中心线，镀膜真空腔体一和镀膜真空腔体二内设置一对特气喷淋装置5，一对特气喷淋装置5相对于热源22对称设置。
传动结构4贯穿生产线，传动结构4设有一对，一对传动结构4相对于设备中心线对称设置，一台传动结构4控制至少一台载板装置3的运行，一台传动结构4上的至少一台载板装置3沿运行路径分布，载板装置3的运行路径位于特气喷淋装置5和加热器21之间，特气喷淋装置5用于特气的喷淋，本实施例所述的特气是指用于半导体的特种气体，例如，包括氮系气体、硅系气体和氧气等特种气体。
如图1所示，装载预热真空腔体12以及载板转换真空腔体16沿真空腔体的中心线到真空腔体的腔外方向依次分布传动结构4和加热器21，镀膜真空腔 体一和镀膜真空腔体二沿真空腔体的中心线到真空腔体的腔外方向依次分布热源22、特气喷淋装置5、传动结构4和加热器21，各真空腔体的加热器21、热源22和特气喷淋装置5单独运行。
如图3所示，载板装置3包括框架30、卡槽31和卡针32，硅片7通过卡针32设置于卡槽31，硅片7两侧均无大面积的遮挡，增大镀膜的有效面积比例，实现了双面镀膜的需求，载板装置3装载硅片7的尺寸和数量可根据客户生产要求进行设定。
如图4-6所示，本实施例的真空腔体14为多功能真空腔体，真空腔体14可构成装载预热真空腔体12、镀膜真空腔体一、镀膜真空腔体二、载板转换真空腔体16和卸料散热真空腔体19，真空腔体14可用于镀膜的不同工序，从而满足了真空腔体多功能运用的需求。
真空腔体14包括腔体框架140、前腔门组件1410和后腔门组件1430，前腔门组件1410和后腔门组件1430设置于腔体框架140两侧，前腔门组件1410和后腔门组件1430中的至少之一设置为多腔门结构。
前腔门组件1410和后腔门组件1430沿x方向分布，图4中z方向为真空腔体的高度方向，图4中y方向为载板装置3的移动方向，y方向作为真空腔体的长度方向。
本实施例中，腔体框架140设置为立式方形结构，腔体框架140内设置工艺腔室，硅片7在工艺腔室进行镀膜工艺，腔体框架140两侧设有隔板147，隔板147上设置有梁架145，两侧的梁架145可选为对称设置，梁架145上设置有至少一个加强筋，梁架145设置有至少一个干泵对接法兰146，至少一个干泵对接法兰146沿真空腔体的高度方向分布。
本实施例将干泵对接法兰146设置于梁架145，不再干涉腔门的开启，提高了维保效率。
腔体框架140至少单侧设置为多腔门结构，如前腔门组件1410设置为单腔门结构，后腔门组件1430设置为多腔门结构，或前腔门组件1410设置为多腔门结构，后腔门组件1430设置为单腔门结构，或前腔门组件1410和后腔门组件1430均设置为多腔门结构。
本实施例中，前腔门组件1410与腔体框架140间设有至少一个连接机构 1480，后腔门组件1430与腔体框架140间设有至少一个连接机构1480，连接机构1480可设为铰链148。前腔门组件1410包括至少一个腔门，至少一个腔门沿y方向分布，本实施例腔门数量设置为两扇，包括第一腔门141和第二腔门142，第一腔门141和第二腔门142沿y方向分布；后腔门组件1430包括至少一个腔门，至少一个腔门沿y方向分布，本实施例腔门数量设置为两扇，包括第三腔门143和第四腔门144，第三腔门143和第四腔门144沿y方向分布；前腔门组件1410和后腔门组件1430中的至少之一在y方向开启或关闭腔门，第一腔门141、第二腔门142、第三腔门143和第四腔门144分别通过铰链148与腔体框架140连接，第一腔门141、第二腔门142、第三腔门143和第四腔门144中任一腔门上的铰链148数量可选设置为3件，3件铰链148沿真空腔体的高度方向均匀分布，防止铰链148变形，保证前腔门组件1410和后腔门组件1430与腔体框架140的连接强度。
本实施例隔板147设置于前腔门组件1410和后腔门组件1430中的至少之一的相邻腔门之间。
本实施例腔门的宽度不大于1.5米(m)，例如为1.3m，腔门的宽度方向为y方向，相较于相关技术中的腔体框架140单侧单腔门结构，本实施例通过多腔门的结构降低了单个腔门的质量，减小对铰链148的负载，提升了铰链148的使用寿命；同时降低了腔门的尺寸，从而降低了生产加工难度，在同等条件下，较小的尺寸不易产生变形，可提升本实施例腔门的强度和寿命，且具备更优的密封性能，能有效保障真空腔体的真空度。
在本实施例中，前腔门组件1410的第一腔门141和第二腔门142，后腔门组件1430的第三腔门143和第四腔门144同步打开，增大了设备维保空间，便于工作人员操作，提高维修效率；本实施例腔门打开占用的面积为相关技术中的结构的一半或更少，减小了设备的占用面积。
在本实施例中，腔体框架140、前腔门组件1410和后腔门组件1430的材质可采用铝、铝合金、不锈钢等。
本实施例真空腔体的多腔门结构可运用于其他设备的腔体，不仅限于真空镀膜设备。
如图7-12所示，传动结构4包括定位支撑机构41、动力机构42和定位机 构43，定位支撑机构41包括齿条415，齿条415设置于载板装置3，动力机构42包括动力齿轮424，齿条415与动力齿轮424啮合连接。
载板装置3包括框架30，框架30包括上框板301和下框板302，上框板301和下框板302沿上下方向分布，上下方向为图示中的z方向。
定位支撑机构41包括支架411、支撑组件417、齿条415和支撑板416，支架411的长度方向与载板装置3的移动方向平行，支架411设置于真空腔体的顶部。
支撑组件417设有至少一个，沿载板装置3移动方向的至少一个支撑组件417设置于支架411，支撑组件417包括轮安装架412、支撑轮413和定位轮414，支撑轮413和定位轮414设置于轮安装架412。
齿条415和支撑板416分别设置于上框板301的两侧面，齿条415的长度方向与载板装置3的移动方向平行，至少一个支撑板416沿载板装置3的移动方向分布，齿条415与定位轮414位于同侧，支撑板416和支撑轮413位于同侧，齿条415的下端面设有卡块，定位轮414设有卡槽，卡块的截面与卡槽的截面形状相同，如卡块设为V型结构，卡槽设为V型槽，卡块扣入卡槽，两者形成卡槽连接，或齿条415的下端面设有卡槽，定位轮414设有卡块，两者仍可形成卡槽连接，可选的，定位轮414采用相关技术中的V型轮，齿条415的卡块设为V型结构，通过齿条415与定位轮414的卡槽连接，实现对载板装置3的定位，使载板装置3的定位不再依靠外形定位，提高了载板装置3的定位精度，降低了整体加工件的加工难度，降低了设备成本。
支撑轮413位于支撑板416下侧，在载板装置3运行过程中，支撑轮413与支撑板416保持贴合状态，支撑轮413对支撑板416进行支撑，通过齿条415与定位轮414的啮合作用以及支撑轮413与支撑板416支撑，实现载板装置3的悬挂支撑。
动力机构42包括电机组件421、磁流体422、联轴器423、动力齿轮424、轴承座425和动力转轴426，轴承座425设有一对，一对轴承座425位于定位支撑机构41的两侧，且设置于真空腔体的腔室顶部，真空腔体的腔室为硅片7的工作区域以及移动区域，动力转轴426贯穿一对轴承座425并与一对轴承座425转动连接，动力转轴426的轴线与载板装置3的移动方向垂直，动力转轴426 外表面设置有动力齿轮424，动力齿轮424与齿条415啮合，实现运动传递，动力转轴426的一端通过联轴器423与磁流体422连接，磁流体422与电机组件421通过紧固机构连接，动力转轴426的轴线、联轴器423的轴线、磁流体422的轴线以及电机组件421的轴线共线，如图11所示，联轴器423、动力齿轮424、轴承座425和动力转轴426位于真空腔体内部，电机组件421和磁流体422位于真空腔体外部，磁流体422的安装面4221与真空腔体的腔体框架140连接，通过磁流体422将真空腔体的内外隔离，保证腔体内的密封性，电机组件421将动力通过磁流体422向真空腔体内部传递。
在一实施例中，如图8所示，磁流体422形状可以为导磁的金属圆筒。
在一实施例中，磁流体422与电机组件421通过螺栓等紧固机构连接。
本实施例中，动力机构42通过动力齿轮424与齿条415啮合的作用，驱动载板装置3移动，动力齿轮424与齿条415的传动效率高于相关技术中采用托辊结构进行传动的传动效率，且动力齿轮424与齿条415传动的定位精度高，载板装置3在腔体内的运行位置与理论值差异小，有利于设备整体的精细化管理，动力齿轮424与齿条415的啮合位置位于载板装置3的顶部，针对于量产机的大载板，载板装置3的运行稳定性得到提升，有效降低硅片碎片的风险。
本实施例中，动力机构42设有至少一个，沿载板装置3移动方向的至少一个动力机构42分布在真空腔体14，支撑组件417设有至少一个，沿载板装置3移动方向的至少一个支撑组件417分布在支架411，从而保证载板装置3在运行过程中的定位功能以及传输动力需求。
定位机构43设置于真空腔体的腔室的底部，如图7所示，定位机构43与定位支撑机构41的间距与载板装置3在真空腔体的腔室高度方向的尺寸相配，定位支撑机构41与载板装置3的上框板301连接，对载板装置3的上端进行定位支撑，定位机构43与载板装置3的下框板302连接，对载板装置3的下端进行定位。
定位机构43包括定位支架431和定位组件430，定位支架431的长度方向与载板装置3的移动方向平行，定位支架431与真空腔体14内部的底部连接，且定位支架431与支架411平行设置。
定位组件430设有至少一个，至少一个定位组件430沿载板装置3的移动 方向设置于定位支架431，定位组件430包括定位固定板432和一对定位杆433，定位杆433设有滚轮434，一对定位杆433对称位于定位固定板432的两侧，滚轮434的间距大于下框板302的宽度，在动力机构42的驱动下载板装置3移动时，载板装置3的下框板302在定位组件430的一对定位杆433之间移动，滚轮434与下框板302的端面接触，从而实现对载板装置3移动的定位和限定，使载板装置3在移动过程中保持稳定。
为保证载板装置3的下框板302能准确进入定位组件430的一对定位杆433之间，下框板302在其移动方向的两端设置为尖头结构，即下框板302两端的尺寸逐渐减小，从而可方便且准确进入不同定位组件430间的一对定位杆433之间。
本实施例传动结构4通过支撑轮413对支撑板416的支撑作用，定位轮414对齿条415的支撑作用，对载板装置3进行支撑和定位，实现载板装置3的悬挂和支撑，并通过定位机构43对下框板302的定位作用，对载板装置3进行定位和限定，电机组件421启动通过磁流体422、联轴器423驱动动力齿轮424转动，动力齿轮424与齿条415啮合连接，通过动力齿轮424的转动驱动齿条415沿移动空间运行，实现载板装置3在不同真空腔体间的移动。
本实施例的传动结构4可运用于其设备的动力传输，不仅限于真空镀膜设备。
可选地，变距动力组件81通过变距传动组件82、伸缩组件83和对接组件84调整载板装置3承载的硅片7与特气喷淋装置5和热源22中的至少之一之间的间距。如图13-15所示，变距结构8包括变距动力组件81、变距传动组件82、伸缩组件83和对接组件84，变距动力组件81与变距传动组件82连接，变距传动组件82与伸缩组件83连接，伸缩组件83与对接组件84连接，变距动力组件81通过变距传动组件82、伸缩组件83和对接组件84控制载板装置3的移动，例如，控制载板装置3装载的硅片7与特气喷淋装置5和热源22中的至少之一的间距。
变距结构8设置于真空腔体14上，变距结构8还包括安装支架85，变距动力组件81和变距传动组件82设置于安装支架85，安装支架85设置于真空腔体14的外侧面，真空腔体14的外侧面位于真空腔体14的腔外。
变距动力组件81包括电机810，电机810的输出轴通过第一轴承86与变距传动组件82连接并将动力传递至变距传动组件82。
可选地，变距传动组件82包括丝杠螺母821、丝杆822和固定座823，固定座823设置于安装支架85，丝杆822的第一端与固定座823转动连接，丝杆822的第二端与变距动力组件81连接。在一实施例中，变距传动组件82包括丝杠螺母821、丝杆822和一对固定座823，一对固定座823设置于安装支架85，丝杆822的第一端与一件固定座823转动连接，丝杆822的第二端转动贯穿另一件固定座823并与第一轴承86连接，变距动力组件81通过第一轴承86将动力传输至丝杆822，丝杠螺母821与丝杆822螺旋连接，且丝杠螺母821与安装支架85滑动连接，丝杆822转动时，丝杠螺母821沿丝杆822的轴向移动。
变距传动组件82还包括隔离板824，隔离板824与安装支架85以及变距动力组件81连接，隔离板824、安装支架85以及变距动力组件81形成隔离空间，变距传动组件82的丝杠螺母821、丝杆822和一对固定座823位于隔离空间，隔离板824对变距传动组件82起到一定的防护作用。
变距结构8还包括至少一个传感器88，传感器88被设置为感应丝杠螺母821的位置，防止丝杠螺母821与固定座823相碰。
伸缩组件83包括移动法兰831、波纹管832和固定法兰833，波纹管832的两端与移动法兰831和固定法兰833连接，固定法兰833与真空腔体14外侧面的对接法兰149连接，固定法兰833和对接法兰149之间设有密封圈，保证波纹管832与真空腔体14的密封性，使波纹管832与真空腔体14处于同一真空环境中，移动法兰831与丝杠螺母821连接，伸缩组件83位于真空腔体14的腔外。
对接组件84包括对接杆841和对接块842，对接杆841第一端插入波纹管832与移动法兰831连接，对接杆841的第二端与对接块842连接，对接块842位于真空腔体14内部，对接块842与载板装置3连接。载板装置3装载硅片7，载板装置3通过定位支撑机构41以及定位机构43设置于真空腔体14的腔内1401，定位支撑机构41包括支架411，定位机构43包括定位支架431，支架411以及定位支架431的长度方向与载板装置3在不同真空腔体14间的运行路径平行。对接块842分别与支架411以及定位支架431连接，支架411以及定位支 架431与真空腔体14之间设置有滑动装置87，滑动装置87包括固接板872和滑块871，固接板872与真空腔体14连接，滑块871分别与支架411和定位支架431连接，滑块871与固接板872滑动连接。
变距结构8实施过程中，变距动力组件81启动，带动丝杆822转动，丝杆822转动使丝杠螺母821沿丝杆822的轴向移动，丝杠螺母821移动同步带动移动法兰831沿丝杆822的轴向移动，移动法兰831移动带动对接块842移动，对接块842移动带动支架411移动，载板装置3悬挂支撑在支架411，支架411移动进而带动载板装置3同步移动，从而实现载板装置3装载的硅片7与特气喷淋装置5和热源22中的至少之一的间距的调整，本实施例中通过变距传动组件82对硅片7与特气喷淋装置5和热源22中的至少之一的间距进行调节，调节的区间范围广，可满足不同硅片、不同工艺的间距需求；本实施例中伸缩组件83的固定法兰833与真空腔体14外侧面的对接法兰149连接，固定法兰833和对接法兰149之间设有密封圈，保证波纹管832与真空腔体14的密封性，移动法兰831与变距传动组件82连接实现载板装置3沿轴向的往复运动，实现对硅片7与特气喷淋装置5和热源22中的至少之一间距调节。
如图14所示，变距结构8设有多个，多个变距结构8沿真空腔体14的高度方向分布在真空腔体14的上端和下端，多个变距结构8沿载板装置3的运行路径分布，保证载板装置3在间距调节过程中保持稳定。
本实施例的变距结构8可运用于其设备的变间调节，不仅限于真空镀膜设备。
如图15所示，真空腔体14内一般配置一对载板装置3，载板装置3相对真空腔体14的轴线对称设置，多个变距结构8分别设置于真空腔体14的腔门两侧，多个变距结构8分别调整一对载板装置3与特气喷淋装置5和热源22中的至少之一的间距。
在其他实施例中，对接组件84的对接块842可直接与载板装置3连接。
本实施例中实施过程中，硅片7装载在载板装置3，定位支撑机构41将载板装置3悬挂支撑和定位，定位机构43在下方对载板装置3进行定位和限定，动力机构42驱动载板装置3在运行路径移动，动力机构42将载板装置3输送至装载预热真空腔体12，装载预热真空腔体12内的加热器21启动，加热器21 的热辐射对载板装置3装载的硅片7进行镀膜工艺前的预加热；动力机构42将载板装置3输送至第一镀膜真空腔体13，传动结构4启动，将载板装置3装载的硅片7与第一镀膜真空腔体13内的特气喷淋装置5以及热源22的间距调节至设定值，第一镀膜真空腔体13内的加热器21启动，热源22启动，特气喷淋装置5释放的特气经过热源22分解，在硅片7的一面镀本征非晶硅薄膜；动力机构42将载板装置3输送至第二镀膜真空腔体15，传动结构4启动，将载板装置3装载的硅片7与第二镀膜真空腔体15内的特气喷淋装置5以及热源22的间距调节至设定值，第二镀膜真空腔体15内的加热器21启动，热源22启动，特气喷淋装置5释放的特气经过热源22分解，在硅片7的一面镀N型掺杂硅基薄膜；动力机构42将载板装置3输送至载板转换真空腔体16，载板转换真空腔体16内设置转换机构，通过转换机构将一侧传动结构4上的载板装置3转换到另一侧传动结构4，对两侧传动结构4上的载板装置3位置置换，载板装置3装载的硅片已镀膜面面向腔外，未镀膜面面向热源22；动力机构42将已转换位置的载板装置3输送至第三镀膜真空腔体17，传动结构4启动，将载板装置3装载的硅片7与第三镀膜真空腔体17内的特气喷淋装置5以及热源22的间距调节至设定值，第三镀膜真空腔体17内的加热器21启动，热源22启动，特气喷淋装置5释放的特气经过热源22分解，在硅片7的另一面，即未镀膜面镀本征非晶硅薄膜；动力机构42将载板装置3输送至第四镀膜真空腔体18，传动结构4启动，将载板装置3装载的硅片7与第四镀膜真空腔体18内的特气喷淋装置5以及热源22的间距调节至设定值，第四镀膜真空腔体18内的加热器21启动，热源22启动，特气喷淋装置5释放的特气经过热源22分解，在硅片7的另一面镀P型掺杂硅基薄膜；动力机构42将完成镀膜的载板装置3输送至卸料散热真空腔体19，卸料散热真空腔体19内设置降温结构，降温结构提供常温气体对硅片散热降温，降温完成后动力机构42驱动载板装置3流转出设备。
本实施例依靠可双面镀膜的载板装置3和载板转换真空腔体16，实现了在一条密闭生产线上硅片7双面镀膜的功能，并在镀膜过程中，硅片7在载板转换真空腔体16实现硅片镀膜面的转换，硅片不再与大气接触，杜绝了空气中水蒸气、氧气、灰尘等因素对硅片7性能的不良影响，提高了硅片7的生产质量。
本实施例整体真空腔体以流水线形式分布，缩短载板装置3的运行路径，同时不再需要额外增加自动化翻面机构进行硅片镀膜面的转换，降低了设备成 本，节省了设备的占地面积，提高了客户场地的使用效率，达到设备工艺集成度高、设备运转效率高以及设备成本低的效果。
其他能使齿条415与定位轮414配合，并使齿条415与定位轮414可相对活动的连接方式也在本申请的保护范围之内。
实施例二：
如图16所示，本实施例与实施例一的区别在于：实施例一中前腔门组件1410的第一腔门141和第二腔门142沿y方向分布，后腔门组件1430的第三腔门143和第四腔门144沿y方向分布，前腔门组件1410和后腔门组件1430中的至少之一在y方向开启或关闭腔门，而本实施例中，前腔门组件1410的第一腔门141和第二腔门142沿z方向分布，后腔门组件1430的第三腔门143和第四腔门144沿z方向分布，前腔门组件1410和后腔门组件1430中的至少之一在z方向开启或关闭腔门。
实施例三：
本实施例与实施例一的区别在于：实施例一中，阀腔6、镀膜真空腔体一、镀膜真空腔体二和载板转换真空腔体16形成一条硅片镀膜生产线，而本实施例中，阀腔6、镀膜真空腔体一、镀膜真空腔体二和载板转换真空腔体16形成多条硅片镀膜生产线，一条生产线可用于硅片7一侧的镀膜，一条生长线可用于硅片7另一侧的镀膜，另外，载板转换真空腔体16也可形成一条生长线用于硅片镀膜面的转换，硅片7在密闭的载板转换真空腔体16进行镀膜面的转换，硅片7不再与大气接触，杜绝了空气中水蒸气、氧气、灰尘等因素对硅片7性能的不良影响，提高了硅片7的生产质量。
其他实施例中，变距传动组件82可采用齿轮齿条传动结构，齿轮和齿条啮合连接，齿条与移动法兰831连接，变距动力组件81驱动齿轮转动，齿轮通过啮合作用驱动齿条移动，齿条移动带动移动法兰831移动，后续间距调节工序与实施例一相同，在此不做赘述；或变距传动组件82可采用齿轮传输带传动结构，齿轮带动传输带传动，移动法兰831设置于传输带，变距动力组件81驱动齿轮转动，齿轮带动传输带移动，传输带移动带动移动法兰831移动，后续间距调节工序与实施例一相同，在此不做赘述；或变距传动组件82可采用凸轮结构，变距动力组件81与凸轮的主动端连接，凸轮的从动端与移动法兰831连接， 变距动力组件81驱动凸轮转动，凸轮的从动端驱动移动法兰831移动，后续间距调节工序与实施例一相同，在此不做赘述。
其他实施例中，伸缩组件83可采用多层套筒结构，外层套筒与真空腔体14连接，内层套筒位于外层套筒内部，内层套筒与外层套筒滑动连接并保持密封性，内层套筒的第一端与对接杆841连接，内层套筒的第二端与变距传动组件82，从而可通过多层套筒结构实现对对接杆841的移动。
综上所述，本申请的有益之处包括：
(1)本申请通过变距传动组件和伸缩组件对载板装置承载的硅片与特气喷淋装置和热源中的至少之一的间距进行调整，调节的区间范围广，可满足不同硅片、不同工艺的间距需求，同时实现间距自动调整的技术效果，提高生产效率，满足自动化流水线式生产的需求。
(2)本申请通过伸缩组件的固定法兰与真空腔体外侧面的对接法兰连接，并在固定法兰和对接法兰之间设置密封圈，保证波纹管与真空腔体的密封性，移动法兰与变距传动组件连接实现载板装置沿轴向的往复运动，实现对硅片与特气喷淋装置和热源中的至少之一的间距调节的效果。

Claims (10)

  1. 一种变距结构，设置于真空腔体上，包括变距动力组件、变距传动组件、伸缩组件和对接组件，所述变距动力组件与所述变距传动组件连接，所述变距传动组件与所述伸缩组件连接，所述伸缩组件与所述对接组件连接，所述变距动力组件通过所述变距传动组件、所述伸缩组件和所述对接组件控制载板装置移动。
  2. 根据权利要求1所述的变距结构，其中，所述伸缩组件包括移动法兰、波纹管和固定法兰，所述波纹管的两端与所述移动法兰和所述固定法兰连接，所述固定法兰与所述真空腔体外侧的所述对接法兰连接，所述固定法兰和所述对接法兰之间设有密封圈，所述移动法兰与所述变距传动组件连接，所述伸缩组件位于所述真空腔体的腔外。
  3. 根据权利要求1所述的变距结构，其中，所述对接组件包括对接杆和对接块，所述对接杆的第一端与所述移动法兰连接，所述对接杆的第二端与所述对接块连接，所述对接块位于所述真空腔体的内部，所述对接块与所述载板装置连接。
  4. 根据权利要求1所述的变距结构，其中，所述载板装置承载硅片，所述载板装置通过定位支撑机构以及定位机构设置于所述真空腔体的腔内，所述定位支撑机构包括支架，所述定位机构包括定位支架。
  5. 根据权利要求4所述的变距结构，其中，所述对接组件包括对接杆和对接块，所述对接杆的第一端与所述移动法兰连接，所述对接杆的第二端与所述对接块连接，所述对接块位于所述真空腔体的内部，所述对接块分别与所述支架以及所述定位支架连接，所述支架以及所述定位支架与所述真空腔体之间设置有滑动装置，所述滑动装置包括固接板和滑块，所述固接板与所述真空腔体连接，所述滑块分别与所述支架和所述定位支架连接，所述滑块与所述固接板 滑动连接。
  6. 根据权利要求1所述的变距结构，其中，所述变距动力组件包括电机，所述电机的输出轴通过第一轴承与所述变距传动组件连接。
  7. 根据权利要求1所述的变距结构，还包括安装支架，所述变距动力组件和所述变距传动组件设置于所述安装支架，所述安装支架设置于所述真空腔体的外侧面。
  8. 根据权利要求7所述的变距结构，其中，所述变距传动组件包括丝杠螺母、丝杆和固定座，所述固定座设置于所述安装支架，所述丝杆的第一端与所述固定座转动连接，所述丝杆的第二端与所述变距动力组件连接。
  9. 根据权利要求8所述的变距结构，还包括至少一个传感器，所述传感器被设置为感应所述丝杠螺母的位置。
  10. 根据权利要求8所述的变距结构，其中，所述变距动力组件通过所述变距传动组件、所述伸缩组件和所述对接组件调整所述载板装置承载的硅片与特气喷淋装置和热源中的至少之一之间的间距。
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