WO2023231263A1 - Refresh address generation circuit - Google Patents

Refresh address generation circuit Download PDF

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Publication number
WO2023231263A1
WO2023231263A1 PCT/CN2022/123849 CN2022123849W WO2023231263A1 WO 2023231263 A1 WO2023231263 A1 WO 2023231263A1 CN 2022123849 W CN2022123849 W CN 2022123849W WO 2023231263 A1 WO2023231263 A1 WO 2023231263A1
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Prior art keywords
refresh
address
signal
window
gate
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PCT/CN2022/123849
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French (fr)
Chinese (zh)
Inventor
谷银川
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长鑫存储技术有限公司
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Publication of WO2023231263A1 publication Critical patent/WO2023231263A1/en

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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408Address circuits

Definitions

  • the present disclosure relates to, but is not limited to, a refresh address generation circuit.
  • the memory is divided into multiple memory banks (Banks), and there are two modes for refreshing storage addresses: All Bank Refresh (All Bank Refresh) in which all Banks refresh the same address together, and all Bank Refresh (All Bank Refresh) in which all Banks are refreshed at the same address.
  • All Bank Refresh All Bank Refresh
  • All Bank Refresh All Bank Refresh
  • All Bank Refresh All Bank Refresh
  • embodiments of the present disclosure provide a refresh address generation circuit that can use redundant repeated instructions to refresh additional addresses that require refresh, thereby avoiding the waste of instructions and improving refresh efficiency.
  • the refresh address generation circuit includes:
  • Refresh control circuit configured to receive multiple first refresh instructions in sequence and perform multiple first refresh operations correspondingly, and output a first clock signal when the number of first refresh operations is less than m, where m is an integer greater than or equal to 1 ;
  • a repeated command processing circuit coupled to the refresh control circuit, for receiving the first refresh command, and outputting an additional refresh flag signal when a repeated command occurs in the first refresh command;
  • An address generator coupled to the refresh control circuit and the repeated command processing circuit, and pre-stored a first address for responding when the first clock signal is received and the additional refresh flag signal is not received. Output an address to be refreshed in response to the first clock signal, or when receiving the additional refresh flag signal, output an additional address in response to the additional refresh flag signal; wherein the address to be refreshed includes the first address Or a second address, the second address is adjacent to the first address; the difference between the additional address and the first address is greater than a preset threshold.
  • a refresh address generation circuit including: a refresh control circuit, a repeated command processing circuit and an address generator.
  • the refresh control circuit is configured to receive multiple first refresh instructions in sequence and perform multiple first refresh operations accordingly. When the number of first refresh operations is less than m, it outputs a first clock signal, where m is an integer greater than or equal to 1.
  • the repeated command processing circuit is coupled to the refresh control circuit and is used for receiving the first refresh command and outputting an additional refresh flag signal when a repeated command occurs in the first refresh command.
  • the address generator is coupled to the refresh control circuit and the repeated command processing circuit, and pre-stores the first address, for outputting the address to be refreshed in response to the first clock signal when the first clock signal is received and no additional refresh flag signal is received.
  • the extra repeated instructions in the first refresh instruction are used to refresh the additional addresses that need to be refreshed, thereby achieving effective use of repeated instructions, avoiding instruction waste, and improving refresh efficiency.
  • Figure 1 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure
  • FIG. 2 is a signal schematic diagram 1 of the refresh address generation circuit provided by an embodiment of the present disclosure
  • Figure 3 is a second structural schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 4 is a second signal schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 5 is a signal diagram 3 of the refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 6 is a schematic structural diagram three of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 7 is a signal diagram 4 of the refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 8 is a schematic structural diagram 4 of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 9 is a schematic structural diagram 5 of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 10 is a schematic structural diagram 6 of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 11 is a signal diagram 5 of the refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 12 is a schematic structural diagram 7 of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 13 is a schematic structural diagram 8 of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 14 is a signal diagram 6 of the refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 15 is a schematic structural diagram 9 of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 16 is a signal diagram 7 of the refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 17 is a signal schematic diagram 8 of the refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 18 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 19 is a schematic structural diagram 11 of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 20 is a signal diagram 9 of the refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 21 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 22 is a signal diagram 10 of the refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 23 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 24 is a signal schematic diagram 11 of the refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 25 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 26 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 27 is a signal schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 28 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 29 is a signal diagram 13 of the refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 30 is a fourteenth signal schematic diagram of the refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 31 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 32 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 33 is a signal schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 34 is a signal diagram 16 of the refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 35 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 36 is a signal schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Figure 37 is a signal schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • FIG. 38 is a 19th signal schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM) is commonly used in the memory of electronic devices.
  • DDR4 SDRAM or previous DDR SDRAM the refresh operation is performed on all banks together, and the addresses refreshed by all banks at the same time are the same, that is, All Bank Refresh.
  • Same Bank Refresh is newly added to DDR5 SDRAM.
  • Same Bank Refresh mode different Banks in the same Bank Group cannot be refreshed at the same time.
  • the refresh command is mistakenly sent or missed, repeated refreshes will be caused, resulting in waste.
  • FIG. 1 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
  • an embodiment of the present disclosure provides a refresh address generation circuit 10, which includes: a refresh control circuit 101 and a repeated command processing circuit. 102 and address generator 103. in:
  • the refresh control circuit 101 is used to receive multiple first refresh commands SB CMD ⁇ 0:m-1> in sequence and perform multiple first refresh operations correspondingly.
  • m is an integer greater than or equal to 1;
  • the repeated command processing circuit 102 is coupled to the refresh control circuit 101 and is used to receive the first refresh command SB CMD and output the extra refresh flag signal Extra Refresh Flag when a repeated command occurs in the first refresh command SB CMD;
  • the address generator 103 is coupled to the refresh control circuit 101 and the repeated command processing circuit 102, and pre-stores the first address for responding to the first clock signal when the first clock signal is received and the extra refresh flag signal Extra Refresh Flag is not received.
  • a clock signal outputs the address to be refreshed, or, when receiving the extra refresh flag signal Extra Refresh Flag, outputs an extra address in response to the extra refresh flag signal Extra Refresh Flag; wherein the address to be refreshed Address includes the first address or the second address , the second address is adjacent to the first address; the difference between the additional address and the first address is greater than the preset threshold.
  • the coupling method includes: direct electrical connection, and electrical connection through other electrical components (such as resistors, delays or inverters, etc.).
  • the "coupling” that appears in the following paragraphs all include these methods, and will not be described again in the following paragraphs.
  • the number of address bits of the first address can be set according to actual needs, and this disclosure does not limit this.
  • the first address is a 16-bit address, recorded as Address ⁇ 15:0>, and other addresses obtained based on the first address are also 16-bit addresses.
  • the refresh control circuit 101 can receive multiple first refresh commands SB CMD ⁇ 0:m-1> in sequence, where SB CMD ⁇ 0:m-1> represents m first refresh commands SB CMD ⁇ 0> ⁇ SB CMD ⁇ m-1>.
  • each first refresh command SB CMD corresponds to a Bank in each Bank Group
  • each first refresh command SB CMD will trigger the corresponding Bank in each Bank Group to perform a first refresh operation (i.e. Same Bank Refresh) .
  • multiple first refresh instructions SB CMD ⁇ 0:m-1> received in sequence will trigger the corresponding Bank in each Bank Group to perform a first refresh operation respectively, that is, perform multiple first refresh operations in sequence.
  • the Bank Group includes m Banks, and the number m of Banks is set according to chip design standards.
  • Each Bank includes multiple rows of storage units, and the address to be refreshed is the row address of the storage unit in the Bank.
  • the address generator 103 outputs the address to be refreshed Address during the first refresh operation, and the storage unit where the address to be refreshed in the Bank corresponding to the first refresh command SB CMD is located. refresh.
  • the refresh control circuit 101 can output the SameBank refresh clock signal SB CBR CLK, and the SameBank refresh clock signal SB CBR CLK includes the first clock signal. If the number of first refresh operations is less than m, it means that there are still banks in the Bank Group that have not yet performed the first refresh operation on the memory unit where the address to be refreshed is Adress. At this time, the refresh control circuit 101 outputs the first clock signal.
  • SB CMD ⁇ 0>, SB CMD ⁇ 1>, SBCMD ⁇ 2> and SB CMD ⁇ 3> are all the first refresh instructions received by the refresh control circuit in sequence, which respectively correspond to the same Bank Group. 4 Banks in , namely Bank0, Bank1, Bank2 and Bank3.
  • the pulses in SB CMD ⁇ 0>, SB CMD ⁇ 1>, SB CMD ⁇ 2> and SB CMD ⁇ 3> can sequentially trigger the refresh control circuit 101 to perform the first refresh operation.
  • the SameBank refresh clock signal SB CBR CLK includes the first clock signal, and the first clock signal remains low.
  • repeated instructions refer to additional refresh instructions issued to a certain bank.
  • the first refresh command SB CMD ⁇ 0> includes two pulses. The previous pulse has triggered the first refresh operation of Bank0, and the latter pulse is a repeated command.
  • the extra refresh flag signal Extra Refresh Flag jumps to a high level, and the repeated command processing circuit 102 outputs the extra refresh flag signal Extra Refresh Flag that jumps to a high level to the address generator 103 .
  • the address generator 103 pre-stores the first address. After receiving the first clock signal and not receiving the extra refresh flag signal Extra Refresh Flag that jumps to a high level, During each first refresh operation, the address to be refreshed will be output in response to the first clock signal, where the address to be refreshed includes the first address or the second address, and the second address is adjacent to the first address, that is, the first address. The difference between the second address and the first address is 1. As shown in the example of Figure 2, the first address is n, and the address to be refreshed includes the first address n or the second address n+1.
  • the address generator 103 when the address generator 103 receives the extra refresh flag signal Extra Refresh Flag that jumps to a high level, it will respond to the extra refresh flag signal Extra Refresh Flag and output the extra address k or k+1 as the pending Refresh the address Address, where the difference between the additional address (k or k+1) and the first address n is greater than the preset threshold. Since the address refresh sequence is based on the size of the address value, an appropriate preset threshold can be set so that the refresh sequence of the additional address k or k+1 is far enough away from the first address n, so that the additional address k or k+ The refresh of 1 will not affect the ongoing first refresh operation.
  • the refresh address generation circuit 10 uses the redundant repeated instructions in the first refresh instruction to refresh additional addresses that need to be refreshed, thereby achieving effective use of repeated instructions and avoiding This eliminates the waste of instructions and improves refresh efficiency.
  • the refresh control circuit 101 is further configured to output a second clock signal when the number of first refresh operations is equal to m.
  • the address generator 103 is also configured to receive a second clock signal and change the first address to a third address in response to the second clock signal.
  • the refresh control circuit 101 can output the SameBank refresh clock signal SB CBR CLK.
  • the SameBank refresh clock signal SB CBR CLK includes a first clock signal and a second clock signal. If the number of first refresh operations is equal to m, it means that the memory cells where the Address to be refreshed in all Banks in the Bank Group have completed the first refresh operation. At this time, the refresh control circuit 101 outputs the second clock signal.
  • the address output signal Addr Counter Output represents the first address stored by the address generator 103.
  • the first address n stored in the address generator 103 remains unchanged, and the address output signal Addr Counter Output continues to be the first address n;
  • the address generator 103 changes the first address n in response to the second clock signal.
  • the address generator 103 can change the first address in an accumulative manner, and the accumulated value can be controlled by the pulses in the second clock signal.
  • the second clock signal includes two pulses.
  • the address generator 103 accumulates 1 twice for the first address n, and the address output signal Addr Counter Output becomes n+2, thereby matching the progress of refreshing the address.
  • the address generator 103 continues to output the address to be refreshed, Adress, based on the first address that becomes n+2, to correspond to the next two adjacent addresses of each bank in the Bank Group.
  • the storage units of the Bank Group are refreshed, and by analogy, the storage units corresponding to all addresses of each Bank in the Bank Group can be refreshed in sequence.
  • the address generator 103 responds to the first clock signal and outputs the address to be refreshed Adress including the first address or the second address, while maintaining the first address. change; and after the number of first refresh operations reaches the preset number value k, the address generator 103 responds to the second clock signal and changes the first address. This not only ensures that the refresh operations are performed without missing a beat, but also maintains the consistency of the address. Integrity.
  • FIG. 3 is an optional structural schematic diagram of the refresh control circuit 101 shown in FIG. 1
  • FIGS. 4 and 5 are signal diagrams corresponding to FIG. 3 .
  • FIG. 4 shows the signal timing when the refresh control circuit 101 sequentially receives multiple first refresh commands SB CMD and performs the first refresh operation, wherein the preset number value of the first refresh command SB CMD is For example, m equals 4.
  • FIG. 5 shows the signal timing when the refresh control circuit 101 receives the second refresh command AB CMD and performs the second refresh operation.
  • the refresh control circuit 101 includes: a refresh window signal generation circuit 201 and a clock pulse generation circuit 202 .
  • the refresh window signal generation circuit 201 is used to receive a plurality of first refresh instructions SB CMD (ie, SB CMD ⁇ 0> to SB CMD ⁇ m-1> shown in Figure 3) and a refresh window reset signal Refresh Window Reset.
  • SB CMD first refresh instructions
  • the first refresh command SB CMD and the refresh window reset signal Refresh Window Reset generate the refresh window signal Refresh Window.
  • the pulse duration of the refresh window signal Refresh Window is the window time for the refresh control circuit 101 to perform a refresh operation
  • the refresh window reset signal Refresh Window Reset is used to reset the refresh window signal generation circuit 201 after a refresh operation. Perform a reset.
  • the refresh operation performed by the refresh control circuit 101 is the first refresh operation, that is, the first refresh operation is performed on the Bank corresponding to the first refresh command SB CMD.
  • the clock pulse generation circuit 202 is coupled to the refresh window signal generation circuit 201 for receiving the refresh window signal Refresh Window and the first refresh command SB CMD.
  • the number of the first refresh commands SB CMD received by the clock pulse generation circuit 202 is less than or equal to m.
  • the first clock signal is generated before the m-th first refresh operation ends, or the second clock signal is generated after the m-th first refresh operation ends.
  • the SameBank refresh clock signal includes a first clock signal and a second clock signal, that is, the first clock signal and the second clock signal are values of the SameBank refresh clock signal in different periods.
  • the clock pulse generating circuit 202 includes: a counting circuit 203 , a counting reset signal generating circuit 204 and a first pulse generating sub-circuit 205 .
  • the counting circuit 203 is used to receive the first refresh command SB CMD and the count reset signal Bank Counter Reset, count the first refresh command SB CMD, and output the count signal Bank Counter, and reset according to the count reset signal Bank Counter Reset.
  • the count reset signal generation circuit 204 is coupled to the counting circuit 203 and the refresh window signal generation circuit 201, and is used to generate a count reset signal Bank Counter Reset after the mth first refresh operation is completed.
  • the first pulse generation sub-circuit 205 is coupled to the count reset signal generation circuit 204 and is used to generate a first clock signal according to the counting signal BankCounter when the first refresh instructions SB CMD are less than m, or when the first refresh instructions SB CMD are equal to m times, the second clock signal is generated according to the count reset signal Bank Counter Reset.
  • the refresh window signal generation circuit 201 includes: a plurality of refresh window sub-signal generation circuits 206 and a refresh window sub-signal processing circuit 207 .
  • the plurality of refresh window sub-signal generating circuits 206 are used to receive the refresh window reset signal Refresh Window Reset and respectively receive a plurality of first refresh instructions SB CMD in sequence. According to the plurality of first refresh instructions SB CMD and the refresh window reset signal Refresh Window Reset A plurality of refresh window sub-signals ReW (ie, ReW ⁇ 0> to ReW ⁇ m-1> shown in FIG. 3) are output in sequence.
  • the refresh window sub-signal processing circuit 207 is coupled to multiple refresh window sub-signal generating circuits 206, and is used to receive multiple refresh window sub-signals ReW in sequence, perform logical operations on the refresh window sub-signals ReW, and output the refresh window signal Refresh Window.
  • the refresh control circuit 101 is also used to receive the second refresh command AB CMD and perform the second refresh operation.
  • multiple refresh window sub-signal generation circuits 206 are also used to simultaneously receive the second refresh command AB CMD and the refresh window reset signal Refresh Window Reset, and generate one-to-one correspondence according to the second refresh command AB CMD and the refresh window reset signal Refresh Window Reset. The same multiple refresh window sub-signals ReW.
  • the refresh window sub-signal processing circuit 207 is also used to receive multiple refresh window sub-signals ReW, perform logical operations on the refresh window sub-signals ReW, and output a refresh window signal Refresh Window.
  • the second refresh operation is performed on all banks in the Bank Group at the same time, that is, All Bank Refresh.
  • the refresh control circuit 101 receives the second refresh command AB CMD and performs the second refresh operation, the first refresh command SB CMD does not include a valid pulse and remains low, that is, the first refresh command SB CMD is invalid, and then the count The signal Bank Counter also remains low, and the count refresh signal Bank Counter Reset does not generate a valid pulse and remains low.
  • the refresh control circuit 101 when the refresh control circuit 101 receives multiple first refresh commands SB CMD in sequence and performs the first refresh operation, the second refresh command AB CMD does not include valid pulses and remains low, that is, the second refresh command SB CMD is invalid.
  • multiple refresh window sub-signal generation circuits 206 when multiple refresh window sub-signal generation circuits 206 receive multiple first refresh commands SB CMD, since the multiple first refresh commands SB CMD are different, the multiple refresh window sub-signals ReW generated are Each is different. When the multiple refresh window sub-signal generating circuits 206 receive the second refresh command AB CMD, they can generate multiple identical refresh window sub-signals ReW.
  • the refresh control circuit 101 can sequentially receive multiple first refresh commands SB CMD and perform the first refresh operation as needed, or receive the second refresh command AB CMD and perform the second refresh operation. That is to say, using one set of refresh control circuit 101 can flexibly perform two refresh operations, thus improving the compatibility of the circuit.
  • the refresh control circuit 101 also includes: a second pulse generation sub-circuit 208, an internal refresh window signal generation circuit 209, an address command signal generation circuit 210, and a refresh window reset signal generation circuit. Circuit 211.
  • the second pulse generation sub-circuit 208 is coupled to the refresh window sub-signal processing circuit 207 for receiving the refresh window signal Refresh Window and the address command signal Addr CMD.
  • the control circuit 101 starts to perform the first refresh operation or the second refresh operation, it generates the first pulse of the third clock signal AB CBR CLK, and outputs the second pulse of the third clock signal AB CBR CLK according to the first pulse of the address command signal Addr CMD. pulse, thereby outputting the third clock signal AB CBR CLK.
  • the refresh control circuit 101 sequentially receives a plurality of first refresh commands SB CMD and performs a first refresh operation
  • the first pulse of the third clock signal AB CBR CLK is aligned with the plurality of first refresh commands SB CMD ⁇
  • the valid pulses of 0> ⁇ SB CMD ⁇ 3>, that is, the first pulse of the third clock signal AB CBR CLK is generated when the refresh control circuit 101 starts to perform the first refresh operation;
  • the second pulse of the third clock signal AB CBR CLK Aligned to the first pulse of the address command signal Addr CMD that is, the second pulse of the third clock signal AB CBR CLK is generated based on the first pulse of the address command signal Addr CMD.
  • the refresh control circuit 101 when the refresh control circuit 101 receives the second refresh command AB CMD and performs the second refresh operation, the first pulse of the third clock signal AB CBR CLK is aligned with the effective pulse of the second refresh command AB CMD, that is, the first pulse of the third clock signal AB CBR CLK is aligned with the valid pulse of the second refresh command AB CMD.
  • the first pulse of the third clock signal AB CBR CLK is generated when the refresh control circuit 101 starts to perform the second refresh operation; the second pulse of the third clock signal AB CBR CLK is aligned with the first pulse of the address command signal Addr CMD, that is, the second pulse of the third clock signal AB CBR CLK.
  • the second pulse of the three clock signals AB CBR CLK is generated based on the first pulse of the address command signal Addr CMD.
  • the internal refresh window signal generation circuit 209 receives the third clock signal AB CBR CLK and is used to generate the internal refresh window signal Inner ACT Window according to the third clock signal AB CBR CLK. ; Among them, the first pulse of the internal refresh window signal Inner ACT Window is generated after the first pulse of the third clock signal AB CBR CLK, and ends before the second pulse of the third clock signal AB CBR CLK is generated; the internal refresh window signal The second pulse of the Inner ACT Window is generated after the second pulse of the third clock signal AB CBR CLK and ends before the pulse of the refresh window signal Refresh Window ends.
  • the refresh controller in the memory will receive the internal refresh window signal Inner ACT Window and the address to be refreshed Adress and refresh the storage unit according to the internal refresh window signal Inner ACT Window, so the internal refresh window signal Inner ACT Window pulse The duration is the time for the storage unit to be refreshed.
  • the address command signal generation circuit 210 is used to generate the first pulse and the second pulse of the address command signal Addr CMD according to the falling edge of the internal refresh window signal Inner ACT Window; Among them, the first pulse of the address command signal Addr CMD is used to generate the second pulse of the internal refresh window signal Inner ACT Window and the second pulse of the third clock signal AB CBR CLK. A falling edge of the internal refresh window signal Inner ACT Window indicates the end of the refresh of an address, thereby generating the address command signal Addr CMD to control the generation of the next address.
  • the effective pulse of the internal refresh window signal Inner ACT Window can be compressed and shifted to obtain the effective pulse of the internal pre-command signal Inner PRE CMD. That is to say, first according to the internal refresh window signal Inner ACT Window The falling edge of the internal pre-command signal Inner PRE CMD is obtained; then, the address command signal generation circuit 210 can generate the first pulse and the second pulse of the address command signal Addr CMD according to the falling edge of the internal pre-command signal Inner PRE CMD.
  • the refresh window reset signal generation circuit 211 receives the internal refresh window signal Inner ACT Window and is used to generate the signal based on the falling edge of the second pulse of the internal refresh window signal Inner ACT Window.
  • Refresh window reset signal Refresh Window Reset pulse Refresh window reset signal Refresh Window Reset pulse.
  • the refresh control circuit 101 further includes: a signal selection circuit 212 .
  • the signal selection circuit 212 is coupled to the counting circuit 203, the first pulse generating sub-circuit 205 and the second pulse generating sub-circuit 208 for receiving the counting signal Bank Counter, the first The clock signal, the second clock signal (the first clock signal and the second clock signal are the SameBank refresh clock signal SB CBR CLK) and the third clock signal AB CBR CLK, when the refresh control circuit 101 performs the first refresh operation, according to the count signal
  • the Bank Counter outputs the first clock signal or the second clock signal, or when the refresh control circuit 101 performs the second refresh operation, the Bank Counter outputs the third clock signal AB CBR CLK according to the counting signal.
  • the signal selection circuit 212 when the refresh control circuit 101 performs the first refresh operation, if any count signal Bank Counter is high level, the signal selection circuit 212 outputs the first clock signal, that is, outputs the SameBank refresh clock signal. SB CBR CLK is low level. If all count signals Bank Counter jump to low level, the signal selection circuit 212 outputs the second clock signal, that is, outputs two consecutive valid pulses in the SameBank refresh clock signal SB CBR CLK.
  • the refresh control circuit 101 further includes: an address flag signal generating circuit 213 .
  • the address flag signal generation circuit 213 is coupled to the address command signal generation circuit 210 and the refresh window sub-signal processing circuit 207 for receiving the address command signal Addr CMD and the refresh window.
  • the signal Refresh Window generates the rising edge of the address flag signal Addr Flag according to the first rising edge of the address command signal Addr CMD, and generates the falling edge of the address flag signal Addr Flag according to the falling edge of the refresh window signal Refresh Window.
  • the repeated command processing circuit 102 includes: a repeated command determining circuit 401 and an additional refresh flag signal generating circuit 402 .
  • the repeated instruction determination circuit 401 is coupled to the counting circuit 203 for receiving the first refresh instruction SB CMD and the counting signal Bank Counter, and does not output when there is no repeated instruction in the first refresh instruction SB CMD, and when the first refresh instruction SB CMD When a repeated command occurs in SB CMD, the repeated command Extra CMD is output.
  • the extra refresh flag signal generation circuit 402 is coupled to the repetition instruction determination circuit 401 and the refresh window signal generation circuit 201, and is used to receive the repetition instruction Extra CMD and the refresh window signal Refresh Window, and generate additional refresh according to the repetition instruction Extra CMD and the refresh window signal Refresh Window.
  • Flag signal Extra Refresh Flag ; among them, the rising edge of the extra refresh flag signal Extra Refresh Flag is generated based on the valid pulse of the repeated instruction Extra CMD, and the falling edge of the extra refresh flag signal Extra Refresh Flag is based on the falling edge of the refresh window signal Refresh Window. generated along.
  • Figure 7 takes the preset quantity value m of the first refresh command SB CMD as an example, which is equal to 4, and illustrates the waveforms of each signal in Figure 6.
  • the repeated command refers to an additional refresh command issued to a certain bank.
  • the first refresh command SB CMD ⁇ 0> includes two pulses, The previous pulse has triggered the first refresh operation of Bank0, and the next pulse is a repeated instruction.
  • the repeated instruction determination circuit 401 can determine whether a repeated instruction occurs in the corresponding first refresh instruction SB CMD according to the count signal Bank Counter.
  • the normal first refresh instructions SB CMD ⁇ 0> ⁇ SB CMD ⁇ 3> except for the repeated instructions the pulse timing is the same as the rising edge of the corresponding count signal Bank Counter ⁇ 0> ⁇ Bank Counter ⁇ 3> Aligned one by one; and the pulse timing of the repeated instruction in the first refresh instruction SB CMD ⁇ 0> is only aligned with the high level state of the count signal Bank Counter ⁇ 0>. Therefore, the normal first refresh instruction and the repeated instruction can be The difference in timing of instructions determines the duplicate instructions.
  • the repeated command determination circuit 401 can output the valid pulse of the repeated command, that is, output the repeated command Extra CMD (not shown in Figure 7).
  • the extra refresh flag signal generation circuit 402 receives the repeated command Extra CMD, it can respond to the valid pulse in the repeated command Extra CMD and jump the extra refresh flag signal Extra Refresh Flag from low level to high level, that is, the extra refresh flag The rising edge of the signal Extra Refresh Flag is generated based on the valid pulse of the repeat command Extra CMD.
  • the extra refresh flag signal generation circuit 402 also receives the refresh window signal Refresh Window, and can respond to the refresh window signal Refresh Window by jumping the extra refresh flag signal Extra Refresh Flag from high level to low level, that is, the extra refresh flag signal Extra Refresh The falling edge of Flag is generated based on the falling edge of the refresh window signal Refresh Window.
  • the address generator 103 includes: an address counter 301 and an address processing circuit 302 .
  • the address counter 301 is coupled to the signal selection circuit 212, used to prestore the first address, and receives the SameBank refresh clock signal SB CBR CLK or the third clock signal AB CBR CLK (not shown in Figure 6) from the signal selection circuit 212.
  • the address counter 301 can change the first address to the third address according to the second clock signal in the SameBank refresh clock signal SB CBR CLK, or change the first address and output the fourth address and the fifth address according to the third clock signal AB CBR CLK. .
  • the address processing circuit 302 is coupled to the address counter 301, the refresh window sub-signal generation circuit 206 and the repeated command processing circuit 102, and is used to receive the address flag signal Addr Flag when the refresh control circuit performs the first refresh operation, and obtain the first address. If the Extra Refresh Flag signal is not received, the first address or the second address will be output according to the address flag signal Addr Flag. If the Extra Refresh Flag signal is received, the first address or the second address will be output within the window time of the Extra Refresh Flag signal. Internally output additional addresses;
  • the address processing circuit 302 is also configured to sequentially obtain the fourth address and the fifth address when the refresh control circuit performs the second refresh operation, and sequentially output the fourth address and the fifth address according to the plurality of refresh window sub-signals ReW.
  • the refresh control circuit when the refresh control circuit performs the first refresh operation and the address processing circuit 302 does not receive the extra refresh flag signal Extra Refresh Flag, the first address is a prestored address, and the second address is an adjacent address.
  • the first address that is, the first address and the second address are two consecutive addresses. Therefore, the third address accumulates the value 2 on the basis of the first address to avoid repeating the first refresh operation on the same address. In this way, after all banks have completed the first refresh operation of the first address and the second address, the first address is converted into the third address by the accumulated value 2, and the refresh control circuit can use the third address as a pre-stored address. A new round of the first refresh operation is performed, thereby ensuring that the first refresh operation is performed without missing a beat.
  • the refresh control circuit 101 when the refresh control circuit performs the second refresh operation, the first address is a prestored address, the fourth address has a value of 1 accumulated on the basis of the first address, and the fifth address is at the fourth address.
  • the value 1 is accumulated on the basis of , that is to say, the first address, the fourth address and the fifth address are three consecutive addresses in sequence.
  • the refresh control circuit 101 can sequentially perform the second refresh operation on the addresses of all banks in address order, thereby ensuring that the second refresh operation is performed without missing a beat.
  • the address counter 301 when the signal selection circuit 212 outputs the second clock signal (ie, the two valid pulses in SB CBR CLK) to the address counter 301, the address counter 301 can be based on the second clock signal.
  • the two valid pulses of the clock signal sequentially accumulate the value 2 on the basis of the first address, thereby obtaining the third address.
  • the address counter 301 can accumulate the value 1 on the basis of the first address according to the first pulse of the third clock signal AB CBR CLK to obtain the third four addresses, and then the address counter 301 can accumulate the value 1 based on the fourth address according to the second pulse of the third clock signal AB CBR CLK to obtain the fifth address.
  • the address processing circuit 302 when the refresh control circuit performs the first refresh operation and the address processing circuit 302 receives the extra refresh flag signal Extra Refresh Flag, the address processing circuit 302 operates within the window time of the extra refresh flag signal Extra Refresh Flag. Output additional addresses. Combining Figure 2 and Figure 8, the address processing circuit 302 can select the target bit or the inverted target bit for output according to two different levels of the extra refresh flag signal Extra Refresh Flag.
  • the address processing circuit 302 can select the target bit for output, and combine it with the address bits other than the target bit to form a regular address n or n+1 for output; when the extra refresh flag signal When the Extra Refresh Flag is high, the address processing circuit 302 can select the inverted target bit for output, and combine it with the address bits other than the target bit to form an additional address k or k+1 for output, where the additional address k is It is obtained by inverting the target bit of the first address n, and the additional address k+1 is obtained by inverting the target bit of the second address n+1.
  • the first address n is "0000 0000 0010”
  • the second address n+1 is "0000 0000 0011”
  • the regular address includes the first address n and the second address n+1.
  • the target bit is the second bit from left to right (i.e., the second highest bit). In this way, by inverting the target bit in the first address n, we can get the additional address k as "0100 0000 0000 0010". Inverting the target bit can obtain the additional address k+1 as "0100 0000 0000 0011".
  • the target bit can be any address bit higher than the preset bit. For example, if the preset bit is the third bit from left to right, then the target bit can be the first bit from left to right (i.e. The highest digit) or the second digit from left to right (i.e. the second highest digit).
  • the address generator 103 selects the target bit or the inverted target bit for output when triggered by the extra refresh flag signal Extra Refresh Flag, so that when redundant repeated instructions appear in the first refresh instruction, the address generator 103 can output Additional address. In this way, the extra repeated instructions in the first refresh instruction are used to refresh the additional addresses that need to be refreshed, thereby avoiding the waste of instructions and improving the refresh efficiency.
  • the address processing circuit 302 includes: a control signal generation circuit 303 , an address selection circuit 304 and an additional address generation circuit 305 .
  • the control signal generation circuit 303 is coupled to the refresh window sub-signal generation circuit 206 and the address flag signal generation circuit 213, and is used to receive a plurality of refresh window sub-signals ReW and an address flag signal Addr Flag, according to the plurality of refresh window sub-signals ReW and address flags.
  • the signal Addr Flag generates the address control signal Addr Ctrl.
  • the address selection circuit 304 is coupled to the address counter 301 and the control signal generation circuit 303, and is used to output the first address before the rising edge of the address control signal Addr Ctrl arrives when the refresh control circuit 101 receives the first refresh command SB CMD, or , after the rising edge of the address control signal Addr Ctrl arrives, the accumulation is performed on the basis of the first address, and the second address is obtained and output.
  • the address selection circuit 304 is also configured to sequentially output the fourth address and the fifth address in response to the address control signal Addr Ctrl when the refresh control circuit 101 receives the second refresh command AB CMD.
  • the extra address generation circuit 305 is coupled to the address selection circuit 304 and is used to receive and output the first address or Second address. Alternatively, the extra address generation circuit 305 is used to receive the first address or the second address according to the extra refresh flag when the refresh control circuit 101 performs the first refresh operation and the extra address generation circuit 305 receives the extra refresh flag signal Extra Refresh Flag.
  • the signal Extra Refresh Flag inverts the target bit in the first address or the second address to obtain and output an additional address, where the target bit is any address bit in the first address or the second address that is higher than the preset bit.
  • the additional address generation circuit 305 is configured to receive and output the fourth address or the fifth address when the refresh control circuit 101 performs the second refresh operation.
  • the counting circuit 203 includes: a plurality of first inverters D1, a plurality of first latches L1, and a second inverter D2.
  • the input terminals of the plurality of first inverters D1 receive a plurality of first refresh commands SB CMD in sequence.
  • the input terminal of the second inverter D2 receives the count reset signal Bank Counter Reset.
  • the set terminals of the plurality of first latches L1 are connected to the output terminals of the plurality of first inverters D1 in sequence, and the reset terminals of the plurality of first latches L1 are connected to the output terminals of the second inverter D2.
  • a plurality of first latches L1 correspondingly output a plurality of counting signals Bank Counter in sequence.
  • each valid pulse in the first refresh command SB CMD can trigger the corresponding count signal Bank Counter to jump from a low level. to high level.
  • the pulse in the first refresh command SB CMD ⁇ 0> can trigger the count signal Bank Counter ⁇ 0> to change from low level to high level.
  • the first refresh command SB CMD ⁇ 1> The pulses in SB CMD ⁇ 2> and SB CMD ⁇ 3> can trigger the counting signals Bank Counter ⁇ 1>, Bank Counter ⁇ 2> and Bank Counter ⁇ 3> respectively from low level to high level.
  • the valid pulse in the count reset signal Bank Counter Reset can trigger all count signals Bank Counter ⁇ 0> ⁇ Bank Counter ⁇ 3> to jump from high level to low level.
  • the valid pulse in the count reset signal Bank Counter Reset is generated after the refresh control circuit completes the m-th first refresh operation.
  • the count reset signal generation circuit 204 includes: a first AND gate A1, a third inverter D3, a second AND gate A2, a first delayer H1, a third Quad inverter D4 and third AND gate A3.
  • the input terminal of the first AND gate A1 receives multiple counting signals Bank Counter.
  • the input terminal of the third inverter D3 receives the refresh window signal Refresh Window.
  • the input terminal of the second AND gate A2 is respectively connected to the output terminal of the first AND gate A1 and the output terminal of the third inverter D3.
  • the input terminal of the first delayer H1 is connected to the output terminal of the second AND gate A2.
  • the input terminal of the fourth inverter D4 is connected to the output terminal of the first delay device H1.
  • the input terminal of the third AND gate A3 is respectively connected to the output terminal of the second AND gate A2 and the output terminal of the fourth inverter D4.
  • the third AND gate A3 outputs a count reset signal Bank Counter Reset.
  • the first pulse generation sub-circuit 205 includes: a second delayer H2, a third delayer H3 and a first OR gate B1.
  • the input terminal of the second delayer H2 receives the count reset signal Bank Counter Reset.
  • the input terminal of the third delayer H3 is connected to the output terminal of the second delayer H2.
  • the input terminals of the first OR gate B1 are respectively connected to the output terminals of the second delayer H2 and the output terminal of the third delayer H3.
  • the first OR gate B1 outputs the first clock signal or the second clock signal, that is to say, The first OR gate B1 outputs the SameBank refresh clock signal SB CBR CLK.
  • the pulses in the count reset signal Bank Counter Reset are based on the count signal Bank Counter ⁇ 0>, Bank Counter ⁇ 1>, Bank Counter ⁇ 2>, Bank Counter ⁇ 3> and the refresh window signal Refresh Window are generated.
  • a valid pulse in the count reset signal Bank Counter Reset after passing through the second delayer H2, the third delayer H3 and the first OR gate B1, generates two valid pulses in the SB CBR CLK.
  • the first delayer H1 can delay the received signal by 0 ⁇ 2ns
  • the second delayer H2 can delay the received signal by 1 ⁇ 3ns
  • the third delayer H3 can delay the received signal by 0 ⁇ 2ns.
  • the delay is 4 ⁇ 6ns.
  • the refresh window sub-signal includes: a first refresh window sub-signal ReW ⁇ i> or a second refresh window sub-signal ReW ⁇ AB>.
  • Each refresh window sub-signal generating circuit 206 includes: a first NOR gate E1 and a second latch L2. When the refresh control circuit performs the first refresh operation, the first input terminal of the first NOR gate E1 receives the corresponding first refresh instruction SBCMD ⁇ i>, or when the refresh control circuit performs the second refresh operation, the first OR The second input terminal of the NOT gate E1 receives the second refresh command ABCMD.
  • the set terminal of the second latch L2 is connected to the output terminal of the first NOR gate E1, and the reset terminal of the second latch L2 receives the refresh window reset signal Refresh Window Reset; when the refresh control circuit performs the first refresh operation, The second latch L2 outputs the corresponding first refresh window sub-signal ReW ⁇ i>, or when the refresh control circuit performs the second refresh operation, the second latch L2 outputs the corresponding second refresh window sub-signal ReW ⁇ AB>.
  • i is greater than or equal to 0 and less than or equal to m-1
  • the first refresh command SB CMD ⁇ i> is any one of multiple first refresh commands
  • the first refresh window sub-signal ReW ⁇ i> corresponds to the first refresh command SB CMD ⁇ i>.
  • the effective pulse in the first refresh command SB CMD ⁇ 0> triggers
  • the first refresh window sub-signal ReW ⁇ 0> jumps from low level to high level
  • the first valid pulse in the refresh window reset signal Refresh Window Reset triggers the first refresh window sub-signal ReW ⁇ 0> from high level. Jumps to low level, thereby obtaining the valid pulse of the first refresh window sub-signal ReW ⁇ 0>.
  • the valid pulses in the first refresh instructions SB CMD ⁇ 0>, SB CMD ⁇ 1> and SB CMD ⁇ 2> trigger the first refresh window sub-signals ReW ⁇ 0>, ReW ⁇ 1> and ReW ⁇ 2> respectively.
  • the second to four valid pulses in the refresh window reset signal Refresh Window Reset trigger the first refresh window sub-signals ReW ⁇ 0>, ReW ⁇ 1> and ReW ⁇ 2> respectively.
  • the high level jumps to the low level, thereby obtaining effective pulses of the first refresh window sub-signals ReW ⁇ 0>, ReW ⁇ 1> and ReW ⁇ 2>.
  • the valid pulse in the second refresh command AB CMD triggers the second refresh window sub-signal ReW ⁇ AB> to jump from a low level to high level
  • the valid pulse in the refresh window reset signal Refresh Window Reset triggers the second refresh window sub-signal ReW ⁇ AB> to jump from high level to low level, thereby obtaining the second refresh window sub-signal ReW ⁇ AB > effective pulse.
  • the refresh window sub-signal processing circuit 207 includes: a second OR gate B2.
  • the input end of the second OR gate B2 receives a plurality of first refresh window sub-signals ReW ⁇ i> from the plurality of refresh window sub-signal generating circuits 206 respectively, or when the refresh control circuit
  • the input terminal of the second OR gate receives the same plurality of second refresh window sub-signals ReW ⁇ AB> from the plurality of refresh window sub-signal generating circuits 206 respectively.
  • the second OR gate B2 outputs the refresh window signal Refresh Window.
  • the refresh window signal generation circuit 201 further includes a twelfth inverter D12.
  • the refresh window reset signal Refresh Window Reset is transmitted to multiple refresh window sub-signal generating circuits 206 through the twelfth inverter D12.
  • the refresh control circuit when the refresh control circuit performs the first refresh operation, since the first refresh window sub-signals ReW ⁇ 0> ⁇ ReW ⁇ 3> are all active at high level, the The refresh window signal Refresh Window output by the second OR gate B2 will include all valid pulses in the first refresh window sub-signal ReW ⁇ 0> ⁇ ReW ⁇ 3>.
  • the second OR gate B2 receives the same plurality of second refresh window sub-signals ReW ⁇ AB>, and the second OR gate B2
  • the refresh window signal Refresh Window output by B2 has the same waveform as the second refresh window sub-signal ReW ⁇ AB>.
  • the second pulse generation sub-circuit 208 includes: a fourth delayer H4, a fifth inverter D5, a fourth AND gate A4, and a sixth inverter D6 , the fifth AND gate A5, the second NOR gate E2 and the seventh inverter D7.
  • the input terminal of the fourth delayer H4 receives the refresh window signal Refresh Window.
  • the input terminal of the fifth inverter D5 is connected to the output terminal of the fourth delayer H4.
  • the first input terminal of the fourth AND gate A4 receives the refresh window signal Refresh Window, and the second input terminal of the fourth AND gate A4 is connected to the output terminal of the fifth inverter D5.
  • the input terminal of the sixth inverter D6 receives the address flag signal Addr Flag.
  • the first input terminal of the fifth AND gate A5 is connected to the output terminal of the sixth inverter D6, and the second input terminal of the fifth AND gate A5 receives the address command signal Addr CMD.
  • the input terminal of the second NOR gate E2 is respectively connected to the output terminal of the fourth AND gate A4 and the output terminal of the fifth AND gate A5.
  • the input terminal of the seventh inverter D7 is connected to the output terminal of the second NOR gate E2, and the seventh inverter D7 outputs the third clock signal AB CBR CLK.
  • the fourth delayer H4 can delay the received refresh window signal Refresh Window by 1 to 3 ns. Furthermore, after the refresh window signal Refresh Window passes through the fourth delayer H4, the fifth inverter D5 and the fourth AND gate A4, it can be converted into the internal activation command signal Inner ACT CMD. Among them, the pulse in the internal activation command signal Inner ACT CMD corresponds to the rising edge of the refresh window signal Refresh Window. After passing through the second NOR gate E2 and the seventh inverter D7, the pulse forms the third clock signal AB CBR CLK the first pulse. The second pulse of the third clock signal AB CBR CLK is formed based on the address flag signal Addr Flag and the address command signal Addr CMD.
  • the address command signal generation circuit 210 includes: an eighth inverter D8, a fifth delayer H5, and a sixth AND gate A6.
  • the input terminal of the eighth inverter D8 receives the internal refresh window signal Inner ACT Window.
  • the input terminal of the fifth delayer H5 is connected to the input terminal of the eighth inverter D8 and receives the internal refresh window signal Inner ACT Window.
  • the input terminals of the sixth AND gate A6 are respectively connected to the output terminal of the eighth inverter D8 and the output terminal of the fifth delay device H5.
  • the sixth AND gate A6 outputs the address command signal Addr CMD.
  • the fifth delayer H5 can delay the received internal refresh window signal Inner ACT Window by 0 to 2 ns.
  • the fifth delay H5 and the sixth AND gate A6 the first pulse of the internal refresh window signal Inner ACT Window can be converted into the third pulse of the address command signal Addr CMD.
  • One pulse, the second pulse of the internal refresh window signal Inner ACT Window can be converted into the second pulse of the address command signal Addr CMD.
  • the internal refresh window signal generation circuit 209 includes: a third latch L3.
  • the set terminal of the third latch L3 receives the third clock signal AB CBR CLK, the reset terminal of the third latch L3 is connected to the output terminal of the eighth inverter D8, and the third latch L3 outputs the internal refresh window signal.
  • Inner ACT Window receives the third clock signal AB CBR CLK.
  • the refresh window reset signal generation circuit 211 includes: a sixth delayer H6, a seventh AND gate A7, and a seventh delayer H7.
  • the input terminal of the sixth delayer H6 receives the address flag signal Addr Flag.
  • the first input terminal of the seventh AND gate A7 is connected to the output terminal of the sixth delayer H6, and the second input terminal of the seventh AND gate A7 receives the internal refresh window signal Inner ACT Window.
  • the input terminal of the seventh delayer H7 is connected to the output terminal of the seventh AND gate A7, and the seventh delayer H7 outputs the refresh window reset signal Refresh Window Reset.
  • the sixth delayer H6 can delay the received address flag signal Addr Flag by 0 to 2 ns, and the seventh delayer H7 can delay the received signal by 4 to 6 ns.
  • the refresh window reset signal Refresh Window can be obtained from the internal refresh window signal Inner ACT Window and the address flag signal Addr Flag. Reset.
  • the signal selection circuit 212 includes: a third NOR gate E3, a third OR gate B3, and an eighth AND gate A8.
  • the input terminals of the third NOR gate E3 respectively receive multiple counting signals Bank Counter.
  • the first input terminal of the third OR gate B3 receives the first clock signal or the second clock signal, that is, the first input terminal of the third OR gate B3 receives the SameBank refresh clock signal SB CBR CLK, and the second input terminal of the third OR gate B3 The terminal receives the third clock signal AB CBR CLK.
  • the first input terminal of the eighth AND gate A8 is connected to the output terminal of the third NOR gate E3, the second input terminal of the eighth AND gate A8 is connected to the output terminal of the third OR gate B3, and the eighth AND gate A8 outputs the first clock. signal, the second clock signal or the third clock signal AB CBR CLK.
  • the waveforms of each signal received by the signal selection circuit 212 are as shown in Figure 4.
  • the third OR gate B3 outputs The signal can include all valid pulses in the SameBank refresh clock signal SB CBR CLK and the third clock signal AB CBR CLK.
  • the signal output by the third NOR gate E3 can shield the valid pulses in the third clock signal AB CBR CLK.
  • the signal output by the eighth AND gate A8 has the same waveform as the SameBank refresh clock signal SB CBR CLK. That is to say, when the first refresh operation is performed, the eighth AND gate A8 outputs the first clock signal or the second clock signal.
  • the multiple count signals Bank Counter ⁇ 0> ⁇ Bank Counter ⁇ 3> and the SameBank refresh clock signal SB CBR CLK all remain low (not shown in Figure 4), and the third The waveform of the clock signal AB CBR CLK is still as shown in Figure 4.
  • the signal output by the eighth AND gate A8 is the same as the waveform of the third clock signal AB CBR CLK. That is to say, when the first refresh operation is performed, The eighth AND gate A8 outputs the third clock signal AB CBR CLK.
  • the address flag signal generation circuit 213 includes: a ninth inverter D9 and a fourth latch L4.
  • the input terminal of the ninth inverter D9 receives the address command signal Addr CMD.
  • the set terminal of the fourth latch L4 is connected to the output terminal of the ninth inverter D9, the reset terminal of the fourth latch L4 receives the refresh window signal Refresh Window, and the fourth latch L4 outputs the address flag signal Addr Flag.
  • the first pulse of the address command signal Addr CMD triggers the address flag signal Addr Flag to jump from low level to high level, and the falling edge of the refresh window signal Refresh Window triggers the address flag.
  • the signal Addr Flag jumps from high level to low level, thereby obtaining the waveform of the address flag signal Addr Flag shown in Figure 27.
  • Figure 28 shows an optional implementation of the refresh control circuit 101.
  • Figure 28 includes Figures 10, 12, 13, 15, 18, 19, 21, 23, 25 and Circuit elements shown in Figure 26.
  • Figures 29 and 30 show an optional waveform diagram of some of the signals in Figure 28.
  • Figure 29 is a schematic diagram of the corresponding signals when the refresh control circuit 101 performs the first refresh operation.
  • Figure 30 is a schematic diagram of the refresh control circuit. 101 corresponds to the signal diagram when performing the second refresh operation.
  • the four first refresh instructions SB CMD ⁇ 0>, SB CMD ⁇ 1>, SB CMD ⁇ 2> and SB CMD ⁇ 3> includes valid pulses
  • the second refresh command AB CMD does not include valid pulses, that is, the second refresh command AB CMD remains low. Therefore, the set ends of the four first latches L1 respectively receive the four first refresh instructions SB CMD ⁇ 0>, SB CMD ⁇ 1>, SB CMD ⁇ 2> and SB through the four first inverters D1.
  • the four first latches L1 respectively output four counting signals Bank Counter ⁇ 0>, Bank Counter ⁇ 1>, Bank Counter ⁇ 2> and Bank Counter ⁇ 3> to the third NOR gate E3 input terminal and the input terminal of the first AND gate A1.
  • the signal selection circuit 212 outputs the SameBank refresh clock signal SB CBR CLK (ie, the first clock signal or the second clock signal) through the eighth AND gate A8.
  • the set ends of the four second latches L2 receive the four first refresh instructions SB CMD ⁇ 0>, SB CMD ⁇ 1>, SB CMD ⁇ 2> and SB respectively through the four first NOR gates E1.
  • the four second latches L2 respectively output four first refresh window sub-signals ReW ⁇ 0>, ReW ⁇ 1>, ReW ⁇ 2> and ReW ⁇ 3>.
  • the signal selection circuit 212 outputs the SameBank refresh clock signal SB CBR CLK (ie, the first clock signal or the second clock signal) to Address processing circuit 302, four refresh window sub-signal generation circuits 206 output four first refresh window sub-signals ReW ⁇ 0>, ReW ⁇ 1>, ReW ⁇ 2> and ReW ⁇ 3> to the address processing circuit 302, address flag
  • the signal generation circuit 213 outputs the address flag signal Addr Flag to the address processing circuit 302.
  • the four first refresh instructions SB CMD ⁇ 0>, SB CMD ⁇ 1>, SB CMD ⁇ 2> and SB CMD ⁇ 3> does not include valid pulses, that is, the four first refresh instructions SB CMD ⁇ 0>, SB CMD ⁇ 1>, SB CMD ⁇ 2> and SB CMD ⁇ 3> all remain low
  • the second refresh command AB CMD includes valid pulses.
  • the four count signals Bank Counter ⁇ 0>, Bank Counter ⁇ 1>, Bank Counter ⁇ 2> and Bank Counter ⁇ 3> output by the four first latches L1 all remain low (not shown in Figure 30 out).
  • the signal selection circuit 212 outputs the third clock signal AB CBR CLK through the eighth AND gate A8.
  • the set ends of the four second latches L2 receive the second refresh command AB CMD through the four first NOR gates E1, and the four second latches L2 all output four identical second refresh windows. Sub-signal ReW ⁇ AB>.
  • the repeated instruction determination circuit 401 includes: a plurality of eighth delays H8, a plurality of ninth AND gates A9, and a fourth NOR gate E4.
  • the input terminals of multiple eighth delays H8 receive multiple counting signals Bank Counter ⁇ 0> ⁇ Bank Counter ⁇ m-1> in sequence.
  • the first input terminals of the plurality of ninth AND gates A9 are connected to the output terminals of the plurality of eighth delays H8 in sequence, and the second input terminals of the plurality of ninth AND gates A9 receive a plurality of first refresh instructions SB CMD ⁇ 0 in sequence. > ⁇ SB CMD ⁇ m-1>.
  • the input terminals of the fourth NOR gate E4 are respectively connected to the output terminals of a plurality of ninth AND gates A9, and the fourth NOR gate E4 outputs repeated instructions.
  • the additional refresh flag signal generating circuit 402 includes: a fifth latch L5.
  • the set end of the fifth latch L5 receives the repeated command Extra CMD, the reset end of the fifth latch L5 receives the refresh window signal Refresh Window, and the fifth latch L5 outputs the extra refresh flag signal Extra Refresh Flag.
  • the repeated command processing circuit 102 in the embodiment of the present disclosure uses the repeated command and the corresponding level of the count signal to trigger the generation of an additional refresh flag signal, thereby triggering the address generator 103 to generate an additional address.
  • the extra repeated instructions in the first refresh instruction are used to refresh the additional addresses that need to be refreshed, thus avoiding the waste of instructions and improving the refresh efficiency.
  • the control signal generation circuit 303 includes: a tenth AND gate A10, a tenth inverter A10, and a fifth NOR gate E5.
  • the input terminals of the tenth AND gate A10 respectively receive multiple refresh window sub-signals ReW.
  • the input terminal of the tenth inverter D10 receives the address flag signal Addr Flag.
  • the first input terminal of the fifth NOR gate E5 is connected to the output terminal of the tenth AND gate A10, the second input terminal of the fifth NOR gate E5 is connected to the output terminal of the tenth inverter D10, and the output terminal of the fifth NOR gate E5 is Address control signal Addr Ctrl.
  • each input end of the tenth AND gate A10 receives a plurality of first refresh operations respectively. Refresh the window sub-signals ReW ⁇ 0>, ReW ⁇ 1>, ReW ⁇ 2> and ReW ⁇ 3>, then the signal ReW ⁇ And> output by the tenth AND gate A10 is always low level.
  • the address control signal Addr Ctrl The waveform is the same as the address flag signal Addr Flag, that is to say, the address flag signal Addr Flag still maintains the same waveform after passing through the control signal generation circuit 303.
  • each input terminal of the tenth AND gate A10 receives the same second refresh window sub-signal ReW ⁇ AB>, then the tenth AND gate A10
  • the output signal ReW ⁇ And> has the same waveform as the second refresh window sub-signal ReW ⁇ AB>, and the high-level area of the signal ReW ⁇ And> covers the high-level area of the address flag signal Addr Flag.
  • the signal ReW ⁇ And> can shield the high level area of the address flag signal Addr Flag, so that the address control signal Addr Ctrl is always low level, that is to say, the address flag signal Addr Flag passes through the control signal generation circuit Blocked after 303.
  • the multiple first refresh window sub-signals ReW ⁇ 0>, ReW ⁇ 1>, ReW ⁇ 2> and ReW ⁇ 3> shown in Figure 33 are different from the multiple first refresh window sub-signals shown in Figure 16
  • the waveforms of the signals ReW ⁇ 0>, ReW ⁇ 1>, ReW ⁇ 2> and ReW ⁇ 3> are the same, that is to say, the multiple first refresh window sub-signals ReW ⁇ 0>, ReW ⁇ 1>, ReW in Figure 33 ⁇ 2> and ReW ⁇ 3> can be obtained according to the example of Figure 16.
  • the second refresh window sub-signal ReW ⁇ AB> shown in FIG. 34 has the same waveform as the second refresh window sub-signal ReW ⁇ AB> shown in FIG. 17 , that is to say, the second refresh window sub-signal ReW ⁇ in FIG. 34 AB> can be obtained according to the example in Figure 17.
  • the address selection circuit 304 includes an adder 306 and a first data selector MUX1.
  • the input terminal of the adder 306 is connected to the address counter 301 .
  • the adder 306 is used to obtain the first address from the address counter 301 when the refresh control circuit receives the first refresh instruction, and performs accumulation on the basis of the first address to obtain the second address.
  • the first input terminal of the first data selector MUX1 is connected to the address counter 301, the second input terminal of the first data selector MUX1 is connected to the adder 306, and the control terminal of the first data selector MUX1 receives the address control signal Addr Ctrl.
  • the output terminal of the data selector MUX1 serves as the output terminal of the address selection circuit 304.
  • the first data selector MUX1 is used to obtain the first address from the address counter 301 and the second address from the adder 306 when the refresh control circuit receives the first refresh instruction, and select the first address in response to the address control signal Addr Ctrl. or the second address for output.
  • the address counter 301 when the refresh control circuit receives the first refresh instruction, the address counter 301 receives the SameBank refresh clock signal SB CBR CLK, that is, receives the first clock signal or the second clock Signal.
  • the address output signal Addr Counter Output represents the first address stored by the address counter 301.
  • the address counter 301 receives the first clock signal, the first address remains n unchanged.
  • the first address n is directly transmitted to the first input terminal of the first data selector MUX1 (ie, the input terminal marked "0").
  • the first address n becomes the second address n+1 after passing through the adder 306.
  • the second address n+1 is transmitted to the second input terminal of the first data selector MUX1 (ie, the input terminal labeled "1").
  • the address Add_1 output by the first data selector MUX1 is controlled by the address control signal Addr Ctrl.
  • the first data selector MUX1 alternately outputs n and n+1 according to the level of the address control signal Addr Ctrl. That is to say, when the address control signal Addr Ctrl is low level, the first data selector MUX1 outputs the first address n input by its first input terminal; when the address control signal Addr Ctrl is high level, the first data selector MUX1 The device MUX1 outputs the second address n+1 input to its second input terminal.
  • the address counter 301 When the number of first refresh operations reaches m, that is, after all banks have completed the first refresh operation of this round, the address counter 301 receives the second clock signal. Since the second clock signal includes two valid pulses, the address counter 301 301 will accumulate 2 on the first address, that is, change the first address to the third address. At this time, all banks in the Bank Group have completed the previous round of first refresh operations. After the refresh control circuit receives the next round of first refresh instructions, it can perform the next round of first refresh operations according to the third address.
  • the current first address is 0000, and 1 is accumulated on the first address to become the second address 0001.
  • the first refresh operation (Same Bank Refresh) is performed on each bank.
  • the address counter 301 is triggered by two pulses in the second clock signal, accumulates 2 to the first address, outputs 0010, and then performs the first refresh operation of the next round.
  • the waveform of the first clock signal or the second clock signal shown in FIG. 36 is the same as that of the first clock signal or the second clock signal shown in FIG. 2. That is to say, the first clock signal or the second clock signal shown in FIG. Come and get.
  • the first refresh operation when the SameBank in the Bank Group performs the first refresh operation, the first refresh operation will be performed on two adjacent addresses (i.e. the first address and the second address) in a group of SameBanks, and in this process The first address remains unchanged.
  • the first address accumulates 2 and becomes the third address.
  • the next round of first refresh operation can be performed according to the third address. In this way, the first refresh operation can be performed on the addresses in each bank in the order of the addresses, ensuring the continuity of the refresh addresses and avoiding missing addresses without performing the first refresh operation.
  • the first data selector MUX1 is also used to obtain the fourth address or the fifth address from the address counter 301 when the refresh control circuit receives the second refresh instruction, in response to the address control signal Addr Ctrl , output the fourth address or fifth address.
  • the address counter 301 receives the third clock signal AB CBR CLK. Each valid pulse in the third clock signal AB CBR CLK will trigger the address counter 301 to accumulate 1 on the first address.
  • the address output signal Addr Counter Output represents the first address stored by the address counter 301.
  • the address output signal Addr Counter Output is accumulated under the trigger of the third clock signal AB CBR CLK.
  • the third clock signal AB CBR CLK shown in Figure 37 includes four cycles, and every two valid pulses are one cycle. Therefore, in the first cycle, the first address n is triggered to change to the fourth address n. +1 and the fifth address n+2; in the second cycle, n+2 as the first address is triggered to change to the fourth address n+3 and the fifth address n+4, and so on.
  • the address control signal Addr Ctrl remains low, so that the first data selector MUX1 only outputs the fourth address and the fifth address received by its first input terminal. That is to say, the first data selector MUX1 outputs The address Add_1 is consistent with the address output signal Addr Counter Output. In this way, the second refresh operation can be performed on the addresses in all banks in the order of the addresses, thereby avoiding missing addresses and not performing the second refresh operation.
  • the waveforms of the third clock signal AB CBR CLK shown in Figure 37 and Figure 5 are the same. That is to say, the third clock signal AB CBR CLK shown in Figure 37 can be obtained through the example of Figure 5.
  • the address counter 301 when all Banks in the Bank Group perform the second refresh operation, the address counter 301 generates consecutive addresses (including the fourth address and the fifth address) according to the third clock signal AB CBR CLK, and these consecutive addresses are The address is output through the address selection circuit 304, so that each address in all Banks sequentially completes the second refresh operation (ie, All Bank Refresh). In this way, the second refresh operation can be performed on the addresses in all banks in the order of the addresses, ensuring the continuity of the refresh addresses and avoiding missing addresses without performing the second refresh operation.
  • using a set of address generators can flexibly perform two refresh operations, thus improving the compatibility of the circuit.
  • the additional address generation circuit 305 includes: an eleventh inverter D11 , a second data selector MUX2 and an address delay module 307 .
  • the input terminal of the eleventh inverter D11 is connected to the output terminal of the address selection circuit 304 (that is, connected to the output terminal of the first data selector MUX1).
  • the eleventh inverter D11 is used to obtain the target bit in the first address or the second address from the address selection circuit 304 when the refresh control circuit receives the first refresh instruction, and convert the target bit in the first address or the second address to Output after bit inversion.
  • the first input terminal of the second data selector MUX2 is connected to the output terminal of the address selection circuit 304 (that is, connected to the output terminal of the first data selector MUX1), and the second input terminal of the second data selector MUX2 is connected to the eleventh inverting The output terminal of device D11.
  • the second data selector MUX2 is used to obtain the first address from the address selection circuit 304 or The target bit in the second address and output the target bit in the first address or the second address.
  • the second data selector MUX2 is used to obtain the data from the eleventh inverter D11 when the refresh control circuit receives the first refresh command and the control end of the second data selector MUX2 receives the extra refresh flag signal Extra Refresh Flag. Invert the target bit in the first address or the second address, and output the inverted target bit in the first address or the second address.
  • the input terminal of the address delay module 307 is connected to the output terminal of the address selection circuit 304 .
  • the address delay module 307 is used to obtain other bits in the first address or the second address from the address selection circuit 304 and delay other bits in the first address or the second address when the refresh control circuit receives the first refresh instruction. Then output, where the other bits are address bits except the target bit.
  • the address Add_1 received by the additional address generation circuit 305 from the address selection circuit 304 is divided into two parts for transmission, in which the target bit of the address Add_1 is transmitted to the second data selector MUX2
  • the first input terminal i.e., the input terminal marked "0"
  • the target bit of the address Add_1 is inverted by the eleventh inverter D11 and then transmitted to the second input terminal (i.e., labeled "1" of the second data selector MUX2 ” input terminal)
  • the other bits in the address Add_1 except the target bit are transmitted to the address delay module 307.
  • the second data selector MUX2 selects the target bit of address Add_1 for output according to the extra refresh flag signal Extra Refresh Flag, or selects the target bit of the inverted address Add_1 for output.
  • the target bit of address Add_1 will be delayed in timing after passing through the second data selector MUX2 and the eleventh inverter D11, the other bits in address Add_1 except the target bit need to go through the address Delay module 307 to match timing.
  • the refresh control circuit when the refresh control circuit receives the first refresh command and performs the first refresh operation, if there is a repeated command in the first refresh command, such as the first refresh command SB in Figure 38 If there is a repeated instruction in CMD ⁇ 0>, the extra refresh flag signal Extra Refresh Flag is output to a high level to the control end of the second data selector MUX2; at this time, the second data selector MUX2 selects the inverted address Add_1 The target bit is output, so that the additional address generation circuit 305 outputs the additional address k or k+1 as the address to be refreshed.
  • the refresh control circuit receives the first refresh command and performs the first refresh operation, if there is no repeated command in the first refresh command, as shown in Figure 38, the first refresh command SB CMD ⁇ 0> ⁇ SB CMD ⁇ 1>
  • the extra refresh flag signal Extra Refresh Flag is output to a low level to the control end of the second data selector MUX2; at this time, the second data selector MUX2 selects the non-inverted address Add_1
  • the target bit is output, so that the additional address generation circuit 305 outputs the first address n or the second address n+1 as the address to be refreshed, that is, the additional address generation circuit 305 outputs the address Add_1 output by the address selection circuit 304 as the address to be refreshed. AddressAddress.
  • the address Add_1 output by the address selection circuit 304 includes the fourth address or the fifth address.
  • the extra refresh flag signal Extra Refresh Flag remains low. Therefore, the second data selector MUX2 selects the target bit of the address Add_1 that is not inverted for output. Therefore, the extra address generation circuit 305 outputs the fourth address or the fifth address.
  • the address is used as the address to be refreshed, that is, the additional address generation circuit 305 outputs the address Add_1 output by the address selection circuit 304 as the address to be refreshed.
  • the address generator 103 selects the target bit in the address Add_1 or the inverted target bit for output through the second data selector MUX2, so that it can be When unnecessary repeated instructions appear in the first refresh instruction, additional addresses are output. In this way, the extra repeated instructions in the first refresh instruction are used to refresh the additional addresses that need to be refreshed, thereby avoiding the waste of instructions and improving the refresh efficiency.
  • Embodiments of the present disclosure provide a refresh address generation circuit, including: a refresh control circuit, a repeated command processing circuit, and an address generator.
  • the refresh control circuit is configured to receive multiple first refresh instructions in sequence and perform multiple first refresh operations accordingly. When the number of first refresh operations is less than m, it outputs a first clock signal, where m is an integer greater than or equal to 1.
  • the repeated command processing circuit is coupled to the refresh control circuit and is used for receiving the first refresh command and outputting an additional refresh flag signal when a repeated command occurs in the first refresh command.
  • the address generator is coupled to the refresh control circuit and the repeated command processing circuit, and pre-stores the first address, for outputting the address to be refreshed in response to the first clock signal when the first clock signal is received and no additional refresh flag signal is received.
  • the extra repeated instructions in the first refresh instruction are used to refresh the additional addresses that need to be refreshed, thereby achieving effective use of repeated instructions, avoiding instruction waste, and improving refresh efficiency.

Abstract

Disclosed in the embodiments of the present disclosure is a refresh address generation circuit, comprising: a refresh control circuit, a repetitive command processing circuit and an address generator. The refresh control circuit is used for sequentially receiving a plurality of first refresh instructions and performing a plurality of first refresh operations corresponding thereto, and outputting a first clock signal when the number of first refresh operations is less than k. The repetitive command processing circuit is coupled to the refresh control circuit and is used for receiving the first refresh instructions, and outputting an extra refresh flag signal when repetitive instructions appear in the first refresh instructions. The address generator is coupled to the refresh control circuit and the repetitive command processing circuit, pre-stores a first address, and is used for outputting, when the first clock signal is received and the extra refresh flag signal is not received and in response to the first clock signal, an address to be refreshed, or outputting an extra address in response to the extra refresh flag signal when the extra refresh flag signal is received.

Description

一种刷新地址产生电路A refresh address generation circuit
相关申请的交叉引用Cross-references to related applications
本公开基于申请号为202210604076.X、申请日为2022年05月30日、发明名称为“一种刷新地址产生电路”的中国专利申请提出,并要求该中国专利申请的优先权,该中国专利申请的全部内容在此引入本公开作为参考。This disclosure is based on a Chinese patent application with application number 202210604076. The entire contents of this application are hereby incorporated by reference into this disclosure.
技术领域Technical field
本公开涉及但不限于一种刷新地址产生电路。The present disclosure relates to, but is not limited to, a refresh address generation circuit.
背景技术Background technique
在存储器中,存储器被划分为多个存储体(Bank),存储地址的刷新则存在两种模式:所有Bank就同一地址一起刷新操作的全存储体刷新(All Bank Refresh),以及对位于同一存储体组(Bank Group)的不同Bank就同一地址依次先后刷新的相同存储体刷新(Same Bank Refresh)。In the memory, the memory is divided into multiple memory banks (Banks), and there are two modes for refreshing storage addresses: All Bank Refresh (All Bank Refresh) in which all Banks refresh the same address together, and all Bank Refresh (All Bank Refresh) in which all Banks are refreshed at the same address. Different Banks of the Bank Group refresh the same memory bank with the same address one after another (Same Bank Refresh).
在存储地址的刷新过程中,若出现误发或漏发刷新指令的情形,会造成重复刷新,带来浪费。During the refresh process of the storage address, if the refresh command is mistakenly sent or missed, it will cause repeated refresh and bring waste.
发明内容Contents of the invention
有鉴于此,本公开实施例提供了一种刷新地址产生电路,能够利用多余的重复指令,对有刷新需要的额外地址进行刷新,从而,避免了指令的浪费,提高了刷新效率。In view of this, embodiments of the present disclosure provide a refresh address generation circuit that can use redundant repeated instructions to refresh additional addresses that require refresh, thereby avoiding the waste of instructions and improving refresh efficiency.
本公开实施例的技术方案是这样实现的:The technical solution of the embodiment of the present disclosure is implemented as follows:
本公开实施例提供一种刷新地址产生电路,所述刷新地址产生电路包括:An embodiment of the present disclosure provides a refresh address generation circuit. The refresh address generation circuit includes:
刷新控制电路,用于依次接收多个第一刷新指令并对应进行多次第一刷新操作,当所述第一刷新操作的次数小于m时输出第一时钟信号,m为大于或等于1的整数;Refresh control circuit, configured to receive multiple first refresh instructions in sequence and perform multiple first refresh operations correspondingly, and output a first clock signal when the number of first refresh operations is less than m, where m is an integer greater than or equal to 1 ;
重复命令处理电路,耦接所述刷新控制电路,用于接收所述第一刷新指令,在所述第一刷新指令中出现重复指令时输出额外刷新标志信号;a repeated command processing circuit, coupled to the refresh control circuit, for receiving the first refresh command, and outputting an additional refresh flag signal when a repeated command occurs in the first refresh command;
地址产生器,耦接所述刷新控制电路和所述重复命令处理电路,且预存第一地址,用于在接收到所述第一时钟信号,且未接收到所述额外刷新标志信号时,响应于所述第一时钟信号输出待刷新地址,或者,在接收到所述额外刷新标志信号时,响应于所述额外刷新标志信号输出额外地址;其中,所述待刷新地址包括所述第一地址或第二地址,所述第二地址相邻于所述第一地址;所述额外地址和所述第一地址的差值大于预设阈值。An address generator, coupled to the refresh control circuit and the repeated command processing circuit, and pre-stored a first address for responding when the first clock signal is received and the additional refresh flag signal is not received. Output an address to be refreshed in response to the first clock signal, or when receiving the additional refresh flag signal, output an additional address in response to the additional refresh flag signal; wherein the address to be refreshed includes the first address Or a second address, the second address is adjacent to the first address; the difference between the additional address and the first address is greater than a preset threshold.
由此可见,本公开实施例提供了一种刷新地址产生电路,包括:刷新控制电路、重复命令处理电路和地址产生器。其中,刷新控制电路用于依次接收多个第一刷新指令并对应进行多次第一刷新操作,当第一刷新操作的次数小于m时输出第一时钟信号,m为大于或等于1的整数。重复命令处理电路耦接刷新控制电路,用于接收第一刷新指令,在第一刷新指令中出现重复指令时输出额外刷新标志信号。地址产生器耦接刷新控制电路和重复命令处理电路,且预存第一地址,用于在接收到第一时钟信号,且未接收到额外刷新标志信号时,响应于第一时钟信号输出待刷新地址,或者,在接收到额外刷新标志信号时,响应于额外刷新标志信号输出额外地址,其中,待刷新地址包括第一地址或第二地址,第二地址相邻于第一地址,额外地址和第一地址的差值大于预设阈值。如此,利用第一刷新指令中多余的重复指令,对有刷新需要的额外地址进行刷新,从而,实现了对重复指令的有效利用,避免了指令的浪费,提高了刷新效率。It can be seen that the embodiment of the present disclosure provides a refresh address generation circuit, including: a refresh control circuit, a repeated command processing circuit and an address generator. The refresh control circuit is configured to receive multiple first refresh instructions in sequence and perform multiple first refresh operations accordingly. When the number of first refresh operations is less than m, it outputs a first clock signal, where m is an integer greater than or equal to 1. The repeated command processing circuit is coupled to the refresh control circuit and is used for receiving the first refresh command and outputting an additional refresh flag signal when a repeated command occurs in the first refresh command. The address generator is coupled to the refresh control circuit and the repeated command processing circuit, and pre-stores the first address, for outputting the address to be refreshed in response to the first clock signal when the first clock signal is received and no additional refresh flag signal is received. , or when receiving the additional refresh flag signal, output an additional address in response to the additional refresh flag signal, wherein the address to be refreshed includes the first address or the second address, the second address is adjacent to the first address, the additional address and the second address The difference of an address is greater than the preset threshold. In this way, the extra repeated instructions in the first refresh instruction are used to refresh the additional addresses that need to be refreshed, thereby achieving effective use of repeated instructions, avoiding instruction waste, and improving refresh efficiency.
附图说明Description of the drawings
图1是本公开实施例提供的刷新地址产生电路的结构示意图一;Figure 1 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图2是本公开实施例提供的刷新地址产生电路的信号示意图一;Figure 2 is a signal schematic diagram 1 of the refresh address generation circuit provided by an embodiment of the present disclosure;
图3是本公开实施例提供的刷新地址产生电路的结构示意图二;Figure 3 is a second structural schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图4是本公开实施例提供的刷新地址产生电路的信号示意图二;Figure 4 is a second signal schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图5是本公开实施例提供的刷新地址产生电路的信号示意图三;Figure 5 is a signal diagram 3 of the refresh address generation circuit provided by an embodiment of the present disclosure;
图6是本公开实施例提供的刷新地址产生电路的结构示意图三;Figure 6 is a schematic structural diagram three of a refresh address generation circuit provided by an embodiment of the present disclosure;
图7是本公开实施例提供的刷新地址产生电路的信号示意图四;Figure 7 is a signal diagram 4 of the refresh address generation circuit provided by an embodiment of the present disclosure;
图8是本公开实施例提供的刷新地址产生电路的结构示意图四;Figure 8 is a schematic structural diagram 4 of a refresh address generation circuit provided by an embodiment of the present disclosure;
图9是本公开实施例提供的刷新地址产生电路的结构示意图五;Figure 9 is a schematic structural diagram 5 of a refresh address generation circuit provided by an embodiment of the present disclosure;
图10是本公开实施例提供的刷新地址产生电路的结构示意图六;Figure 10 is a schematic structural diagram 6 of a refresh address generation circuit provided by an embodiment of the present disclosure;
图11是本公开实施例提供的刷新地址产生电路的信号示意图五;Figure 11 is a signal diagram 5 of the refresh address generation circuit provided by an embodiment of the present disclosure;
图12是本公开实施例提供的刷新地址产生电路的结构示意图七;Figure 12 is a schematic structural diagram 7 of a refresh address generation circuit provided by an embodiment of the present disclosure;
图13是本公开实施例提供的刷新地址产生电路的结构示意图八;Figure 13 is a schematic structural diagram 8 of a refresh address generation circuit provided by an embodiment of the present disclosure;
图14是本公开实施例提供的刷新地址产生电路的信号示意图六;Figure 14 is a signal diagram 6 of the refresh address generation circuit provided by an embodiment of the present disclosure;
图15是本公开实施例提供的刷新地址产生电路的结构示意图九;Figure 15 is a schematic structural diagram 9 of a refresh address generation circuit provided by an embodiment of the present disclosure;
图16是本公开实施例提供的刷新地址产生电路的信号示意图七;Figure 16 is a signal diagram 7 of the refresh address generation circuit provided by an embodiment of the present disclosure;
图17是本公开实施例提供的刷新地址产生电路的信号示意图八;Figure 17 is a signal schematic diagram 8 of the refresh address generation circuit provided by an embodiment of the present disclosure;
图18是本公开实施例提供的刷新地址产生电路的结构示意图十;Figure 18 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图19是本公开实施例提供的刷新地址产生电路的结构示意图十一;Figure 19 is a schematic structural diagram 11 of a refresh address generation circuit provided by an embodiment of the present disclosure;
图20是本公开实施例提供的刷新地址产生电路的信号示意图九;Figure 20 is a signal diagram 9 of the refresh address generation circuit provided by an embodiment of the present disclosure;
图21是本公开实施例提供的刷新地址产生电路的结构示意图十二;Figure 21 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图22是本公开实施例提供的刷新地址产生电路的信号示意图十;Figure 22 is a signal diagram 10 of the refresh address generation circuit provided by an embodiment of the present disclosure;
图23是本公开实施例提供的刷新地址产生电路的结构示意图十三;Figure 23 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图24是本公开实施例提供的刷新地址产生电路的信号示意图十一;Figure 24 is a signal schematic diagram 11 of the refresh address generation circuit provided by an embodiment of the present disclosure;
图25是本公开实施例提供的刷新地址产生电路的结构示意图十四;Figure 25 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图26是本公开实施例提供的刷新地址产生电路的结构示意图十五;Figure 26 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图27是本公开实施例提供的刷新地址产生电路的信号示意图十二;Figure 27 is a signal schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图28是本公开实施例提供的刷新地址产生电路的结构示意图十六;Figure 28 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图29是本公开实施例提供的刷新地址产生电路的信号示意图十三;Figure 29 is a signal diagram 13 of the refresh address generation circuit provided by an embodiment of the present disclosure;
图30是本公开实施例提供的刷新地址产生电路的信号示意图十四;Figure 30 is a fourteenth signal schematic diagram of the refresh address generation circuit provided by an embodiment of the present disclosure;
图31是本公开实施例提供的刷新地址产生电路的结构示意图十七;Figure 31 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图32是本公开实施例提供的刷新地址产生电路的结构示意图十八;Figure 32 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图33是本公开实施例提供的刷新地址产生电路的信号示意图十五;Figure 33 is a signal schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图34是本公开实施例提供的刷新地址产生电路的信号示意图十六;Figure 34 is a signal diagram 16 of the refresh address generation circuit provided by an embodiment of the present disclosure;
图35是本公开实施例提供的刷新地址产生电路的结构示意图十九;Figure 35 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图36是本公开实施例提供的刷新地址产生电路的信号示意图十七;Figure 36 is a signal schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图37是本公开实施例提供的刷新地址产生电路的信号示意图十八;Figure 37 is a signal schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure;
图38是本公开实施例提供的刷新地址产生电路的信号示意图十九。FIG. 38 is a 19th signal schematic diagram of a refresh address generation circuit provided by an embodiment of the present disclosure.
具体实施方式Detailed ways
为了使本公开的目的、技术方案和优点更加清楚,下面结合附图和实施例对本公开的技术方案进一步详细阐述,所描述的实施例不应视为对本公开的限制,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本公开保护的范围。In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the technical solutions of the present disclosure are further elaborated below in conjunction with the accompanying drawings and examples. The described embodiments should not be regarded as limiting the present disclosure. Those of ordinary skill in the art will All other embodiments obtained without creative efforts belong to the scope of protection of this disclosure.
在以下的描述中,涉及到“一些实施例”,其描述了所有可能实施例的子集,但是可以理解,“一些实施例”可以是所有可能实施例的相同子集或不同子集,并且可以在不冲突的情况下相互结合。In the following description, reference is made to "some embodiments" which describe a subset of all possible embodiments, but it is understood that "some embodiments" may be the same subset or a different subset of all possible embodiments, and Can be combined with each other without conflict.
如果申请文件中出现“第一/第二”的类似描述则增加以下的说明,在以下的描述中,所涉及的术语“第一/第二/第三”仅仅是区别类似的对象,不代表针对对象的特定排序,可以理解地,“第一/第二/第三”在允许的情况下可以互换特定的顺序或先后次序,以使这里描述的本公开实施例能够以除了在这里图示或描述的以外的顺序实施。If similar descriptions of "first/second" appear in the application documents, add the following explanation. In the following description, the terms "first/second/third" involved are only used to distinguish similar objects and do not mean Regarding the specific ordering of objects, it is understood that "first/second/third" may interchange the specific order or sequence where permitted, so that the embodiments of the disclosure described herein can be used in other ways than those shown in the figures here. may be performed in any order other than that shown or described.
除非另有定义,本文所使用的所有的技术和科学术语与属于本公开的技术领域的技术人员通常理解的含义相同。本文中所使用的术语只是为了描述本公开实施例的目的,不是旨在限制本公开。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used herein is for the purpose of describing embodiments of the disclosure only and is not intended to limit the disclosure.
双倍速率同步动态随机存储器(Double Data Rate Synchronous Dynamic Random Access Memory,DDR SDRAM)常用于电子设备的内存。在DDR4 SDRAM或者之前的DDR SDRAM中,刷新操作是所有Bank一起进行的,所有的Bank在同一时间的刷新的地址是相同的,即All Bank Refresh。而在DDR5 SDRAM中新加入了Same Bank Refresh。也就是说,在Same Bank Refresh的模式下,位于同一个Bank Group中的不同Bank无法同时进行刷新。然而,若出现误发或漏发刷新指令的情形,会造成重复刷新,带来浪费。Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM) is commonly used in the memory of electronic devices. In DDR4 SDRAM or previous DDR SDRAM, the refresh operation is performed on all banks together, and the addresses refreshed by all banks at the same time are the same, that is, All Bank Refresh. Same Bank Refresh is newly added to DDR5 SDRAM. In other words, in Same Bank Refresh mode, different Banks in the same Bank Group cannot be refreshed at the same time. However, if the refresh command is mistakenly sent or missed, repeated refreshes will be caused, resulting in waste.
图1是本公开实施例提供的一种刷新地址产生电路的结构示意图,如图1所示,本公开实施例提供了一种刷新地址产生电路10,包括:刷新控制电路101、重复命令处理电路102和地址产生器103。其中:Figure 1 is a schematic structural diagram of a refresh address generation circuit provided by an embodiment of the present disclosure. As shown in Figure 1, an embodiment of the present disclosure provides a refresh address generation circuit 10, which includes: a refresh control circuit 101 and a repeated command processing circuit. 102 and address generator 103. in:
刷新控制电路101,用于依次接收多个第一刷新指令SB CMD<0:m-1>并对应进行多次第一刷新操作,当第一刷新操作的次数小于m时输出第一时钟信号,m为大于或等于1的整数;The refresh control circuit 101 is used to receive multiple first refresh commands SB CMD<0:m-1> in sequence and perform multiple first refresh operations correspondingly. When the number of first refresh operations is less than m, output the first clock signal, m is an integer greater than or equal to 1;
重复命令处理电路102,耦接刷新控制电路101,用于接收第一刷新指令SB CMD,在第一刷新指令SB CMD中出现重复指令时输出额外刷新标志信号Extra Refresh Flag;The repeated command processing circuit 102 is coupled to the refresh control circuit 101 and is used to receive the first refresh command SB CMD and output the extra refresh flag signal Extra Refresh Flag when a repeated command occurs in the first refresh command SB CMD;
地址产生器103,耦接刷新控制电路101和重复命令处理电路102,且预存第一地址,用于在接收到第一时钟信号,且未接收到额外刷新标志信号Extra Refresh Flag时,响应于第一时钟信号输出待刷新地址Address,或者,在接收到额外刷新标志信号Extra Refresh Flag时,响应于额外刷新标志信号Extra Refresh Flag输出额外地址;其中,待刷新地址Address包括第一地址或第二地址,第二地址相邻于第一地址;额外地址和第一地址的差值大于预设阈值。The address generator 103 is coupled to the refresh control circuit 101 and the repeated command processing circuit 102, and pre-stores the first address for responding to the first clock signal when the first clock signal is received and the extra refresh flag signal Extra Refresh Flag is not received. A clock signal outputs the address to be refreshed, or, when receiving the extra refresh flag signal Extra Refresh Flag, outputs an extra address in response to the extra refresh flag signal Extra Refresh Flag; wherein the address to be refreshed Address includes the first address or the second address , the second address is adjacent to the first address; the difference between the additional address and the first address is greater than the preset threshold.
需要说明的是,在本公开实施例中,耦接的方式包括了:直接电连接,以及,通过其他电元件(如电阻、延时器或反相器等)电连接。后文中出现的“耦接”均包括了这些方式,后文不再赘述。It should be noted that in the embodiment of the present disclosure, the coupling method includes: direct electrical connection, and electrical connection through other electrical components (such as resistors, delays or inverters, etc.). The "coupling" that appears in the following paragraphs all include these methods, and will not be described again in the following paragraphs.
需要说明的是,第一地址的地址位数目可以根据实际需要而设置,本公开对此不作限制。例如,第一地址为16位地址,记为Address<15:0>,其他根据第一地址得到的地址也为16位地址。It should be noted that the number of address bits of the first address can be set according to actual needs, and this disclosure does not limit this. For example, the first address is a 16-bit address, recorded as Address<15:0>, and other addresses obtained based on the first address are also 16-bit addresses.
本公开实施例中,刷新控制电路101可以依次接收多个第一刷新指令SB CMD<0:m-1>,这里,SB CMD<0:m-1>表示m个第一刷新指令SB CMD<0>~SB CMD<m-1>。其中,每个第一刷新指令SB CMD对应每个Bank Group中的一个Bank,每个第一刷新指令SB CMD会触发每个Bank Group中对应的Bank进行一次第一刷新操作(即Same Bank Refresh)。相应的,依次接收的多个第一刷新指令SB CMD<0:m-1>会依次触发每个Bank Group中对应的Bank分别进行一次第一刷新操作,即依次进行多次第一刷新操作。In the embodiment of the present disclosure, the refresh control circuit 101 can receive multiple first refresh commands SB CMD<0:m-1> in sequence, where SB CMD<0:m-1> represents m first refresh commands SB CMD< 0>~SB CMD<m-1>. Among them, each first refresh command SB CMD corresponds to a Bank in each Bank Group, and each first refresh command SB CMD will trigger the corresponding Bank in each Bank Group to perform a first refresh operation (i.e. Same Bank Refresh) . Correspondingly, multiple first refresh instructions SB CMD<0:m-1> received in sequence will trigger the corresponding Bank in each Bank Group to perform a first refresh operation respectively, that is, perform multiple first refresh operations in sequence.
本公开实施例中,Bank Group中包括了m个Bank,Bank的数量m按照芯片设计标准进行设定。每 个Bank包括多行存储单元,待刷新地址Address为Bank中存储单元的行地址。在刷新控制电路101进行第一刷新操作的过程中,地址产生器103在第一刷新操作期间输出待刷新地址Address,该第一刷新指令SB CMD对应的Bank中待刷新地址Address所在的存储单元被刷新。In this disclosed embodiment, the Bank Group includes m Banks, and the number m of Banks is set according to chip design standards. Each Bank includes multiple rows of storage units, and the address to be refreshed is the row address of the storage unit in the Bank. During the first refresh operation of the refresh control circuit 101, the address generator 103 outputs the address to be refreshed Address during the first refresh operation, and the storage unit where the address to be refreshed in the Bank corresponding to the first refresh command SB CMD is located. refresh.
本公开实施例中,刷新控制电路101可以输出SameBank刷新时钟信号SB CBR CLK,SameBank刷新时钟信号SB CBR CLK中包括了第一时钟信号。若第一刷新操作的次数小于m,则表征Bank Group中还有未对待刷新地址Adress所在的存储单元进行第一刷新操作的Bank,此时,刷新控制电路101输出第一时钟信号。In the disclosed embodiment, the refresh control circuit 101 can output the SameBank refresh clock signal SB CBR CLK, and the SameBank refresh clock signal SB CBR CLK includes the first clock signal. If the number of first refresh operations is less than m, it means that there are still banks in the Bank Group that have not yet performed the first refresh operation on the memory unit where the address to be refreshed is Adress. At this time, the refresh control circuit 101 outputs the first clock signal.
图2示出了m=4的情况下部分信号的波形。结合图1和图2,SB CMD<0>、SB CMD<1>、SBCMD<2>和SB CMD<3>均为刷新控制电路依次收到的第一刷新指令,其分别对应同一个Bank Group中的4个Bank,即Bank0、Bank1、Bank2和Bank3。相应的,SB CMD<0>、SB CMD<1>、SB CMD<2>和SB CMD<3>中的脉冲,可以分别依次触发刷新控制电路101进行第一刷新操作。SameBank刷新时钟信号SB CBR CLK则包括了第一时钟信号,第一时钟信号保持低电平。Figure 2 shows the waveform of part of the signal when m=4. Combining Figure 1 and Figure 2, SB CMD<0>, SB CMD<1>, SBCMD<2> and SB CMD<3> are all the first refresh instructions received by the refresh control circuit in sequence, which respectively correspond to the same Bank Group. 4 Banks in , namely Bank0, Bank1, Bank2 and Bank3. Correspondingly, the pulses in SB CMD<0>, SB CMD<1>, SB CMD<2> and SB CMD<3> can sequentially trigger the refresh control circuit 101 to perform the first refresh operation. The SameBank refresh clock signal SB CBR CLK includes the first clock signal, and the first clock signal remains low.
本公开实施例中,重复指令是指对某个Bank额外多发出的刷新指令。如图2所示,第一刷新指令SB CMD<0>中包括了两个脉冲,前一个脉冲已经触发了Bank0的第一刷新操作,则后一个脉冲即为重复指令。响应于重复指令,额外刷新标志信号Extra Refresh Flag跳转为高电平,重复命令处理电路102输出跳转为高电平的额外刷新标志信号Extra Refresh Flag到地址产生器103。In the embodiment of the present disclosure, repeated instructions refer to additional refresh instructions issued to a certain bank. As shown in Figure 2, the first refresh command SB CMD<0> includes two pulses. The previous pulse has triggered the first refresh operation of Bank0, and the latter pulse is a repeated command. In response to the repeated command, the extra refresh flag signal Extra Refresh Flag jumps to a high level, and the repeated command processing circuit 102 outputs the extra refresh flag signal Extra Refresh Flag that jumps to a high level to the address generator 103 .
本公开实施例中,结合图1和图2,地址产生器103中预存了第一地址,在接收到第一时钟信号,且未接收到跳转为高电平的额外刷新标志信号Extra Refresh Flag时,在每一次第一刷新操作期间会响应于第一时钟信号输出待刷新地址Address,其中,待刷新地址Address包括第一地址或第二地址,第二地址相邻于第一地址,即第二地址与第一地址相差值为1。如图2所示例,第一地址为n,待刷新地址Address包括了第一地址n或第二地址n+1。In this disclosed embodiment, with reference to Figures 1 and 2, the address generator 103 pre-stores the first address. After receiving the first clock signal and not receiving the extra refresh flag signal Extra Refresh Flag that jumps to a high level, During each first refresh operation, the address to be refreshed will be output in response to the first clock signal, where the address to be refreshed includes the first address or the second address, and the second address is adjacent to the first address, that is, the first address. The difference between the second address and the first address is 1. As shown in the example of Figure 2, the first address is n, and the address to be refreshed includes the first address n or the second address n+1.
继续结合图1和图2,地址产生器103在接收到跳转为高电平额外刷新标志信号Extra Refresh Flag时,会响应于额外刷新标志信号Extra Refresh Flag输出额外地址k或k+1作为待刷新地址Address,其中,额外地址(k或k+1)和第一地址n的差值大于预设阈值。由于地址的刷新顺序是按照地址数值大小依次进行,因此,可以设置合适的预设阈值,使得额外地址k或k+1的刷新顺序距离第一地址n足够远,从而,额外地址k或k+1的刷新不会影响正在进行的第一刷新操作。Continuing to combine Figures 1 and 2, when the address generator 103 receives the extra refresh flag signal Extra Refresh Flag that jumps to a high level, it will respond to the extra refresh flag signal Extra Refresh Flag and output the extra address k or k+1 as the pending Refresh the address Address, where the difference between the additional address (k or k+1) and the first address n is greater than the preset threshold. Since the address refresh sequence is based on the size of the address value, an appropriate preset threshold can be set so that the refresh sequence of the additional address k or k+1 is far enough away from the first address n, so that the additional address k or k+ The refresh of 1 will not affect the ongoing first refresh operation.
可以理解的是,本公开实施例提供的刷新地址产生电路10,利用第一刷新指令中多余的重复指令,对有刷新需要的额外地址进行刷新,从而,实现了对重复指令的有效利用,避免了指令的浪费,提高了刷新效率。It can be understood that the refresh address generation circuit 10 provided by the embodiment of the present disclosure uses the redundant repeated instructions in the first refresh instruction to refresh additional addresses that need to be refreshed, thereby achieving effective use of repeated instructions and avoiding This eliminates the waste of instructions and improves refresh efficiency.
在本公开的一些实施例中,参考图1和图2,刷新控制电路101还用于当第一刷新操作的次数等于m时输出第二时钟信号。相应的,地址产生器103还用于接收第二时钟信号,响应于第二时钟信号改变第一地址为第三地址。In some embodiments of the present disclosure, referring to FIGS. 1 and 2 , the refresh control circuit 101 is further configured to output a second clock signal when the number of first refresh operations is equal to m. Correspondingly, the address generator 103 is also configured to receive a second clock signal and change the first address to a third address in response to the second clock signal.
本公开实施例中,刷新控制电路101可以输出SameBank刷新时钟信号SB CBR CLK,SameBank刷新时钟信号SB CBR CLK包括了第一时钟信号和第二时钟信号。若第一刷新操作的次数等于m,则表征Bank Group中的所有Bank中待刷新地址Address所在的存储单元均完成了第一刷新操作,此时,刷新控制电路101输出第二时钟信号。In the disclosed embodiment, the refresh control circuit 101 can output the SameBank refresh clock signal SB CBR CLK. The SameBank refresh clock signal SB CBR CLK includes a first clock signal and a second clock signal. If the number of first refresh operations is equal to m, it means that the memory cells where the Address to be refreshed in all Banks in the Bank Group have completed the first refresh operation. At this time, the refresh control circuit 101 outputs the second clock signal.
结合图1和图2,地址输出信号Addr Counter Output表征了地址产生器103所存储的第一地址。在刷新控制电路101进行第一刷新操作的次数小于m时,地址产生器103中所存储的第一地址n维持不变,地址输出信号Addr Counter Output持续为第一地址n;当Bank Group中的所有Bank中两个相邻地址对应的存储单元完成刷新后,即刷新控制电路101进行第一刷新操作的次数等于m时,地址产生器103响应于第二时钟信号改变第一地址n。地址产生器103可以采用累加的方式改变第一地址,累加的值则可以由第二时钟信号中的脉冲进行控制,如图2所示,第二时钟信号包括了两个脉冲,在这两个脉冲的触发下,地址产生器103对第一地址n两次累加1,地址输出信号Addr Counter Output变为n+2,从而与刷新地址的进度相匹配。而后进行的m次第一刷新操作中,地址产生器103以变为n+2的第一地址为基础,继续输出待刷新地址Adress,以对Bank Group中各Bank的下两个相邻地址对应的存储单元完成刷新,以此类推,可以对Bank Group中各Bank的所有地址对应的存储单元依次完成刷新。Combining Figures 1 and 2, the address output signal Addr Counter Output represents the first address stored by the address generator 103. When the number of times the refresh control circuit 101 performs the first refresh operation is less than m, the first address n stored in the address generator 103 remains unchanged, and the address output signal Addr Counter Output continues to be the first address n; when After the memory cells corresponding to two adjacent addresses in all banks are refreshed, that is, when the number of times the refresh control circuit 101 performs the first refresh operation is equal to m, the address generator 103 changes the first address n in response to the second clock signal. The address generator 103 can change the first address in an accumulative manner, and the accumulated value can be controlled by the pulses in the second clock signal. As shown in Figure 2, the second clock signal includes two pulses. Under the triggering of the pulse, the address generator 103 accumulates 1 twice for the first address n, and the address output signal Addr Counter Output becomes n+2, thereby matching the progress of refreshing the address. In the subsequent m first refresh operations, the address generator 103 continues to output the address to be refreshed, Adress, based on the first address that becomes n+2, to correspond to the next two adjacent addresses of each bank in the Bank Group. The storage units of the Bank Group are refreshed, and by analogy, the storage units corresponding to all addresses of each Bank in the Bank Group can be refreshed in sequence.
可以理解的是,在进行一次第一刷新操作的过程中,地址产生器103响应于第一时钟信号,输出包括第一地址或第二地址的待刷新地址Adress的同时,又维持第一地址不改变;而在第一刷新操作次数达到预设数量值k后,地址产生器103响应于第二时钟信号,改变第一地址,这样,既保证了刷新操作不遗漏地进行,又维持了地址的完整性。It can be understood that during a first refresh operation, the address generator 103 responds to the first clock signal and outputs the address to be refreshed Adress including the first address or the second address, while maintaining the first address. change; and after the number of first refresh operations reaches the preset number value k, the address generator 103 responds to the second clock signal and changes the first address. This not only ensures that the refresh operations are performed without missing a beat, but also maintains the consistency of the address. Integrity.
图3为图1示出的刷新控制电路101的一种可选的结构示意图,图4和图5为对应于图3的信号示意图。FIG. 3 is an optional structural schematic diagram of the refresh control circuit 101 shown in FIG. 1 , and FIGS. 4 and 5 are signal diagrams corresponding to FIG. 3 .
需要说明的是,图4示出了刷新控制电路101依次接收多个第一刷新指令SB CMD并进行第一刷新操作情况下的信号时序,其中,以第一刷新指令SB CMD的预设数量值m等于4为例。图5示出了刷新控制电路101接收第二刷新指令AB CMD并进行第二刷新操作情况下的信号时序。It should be noted that FIG. 4 shows the signal timing when the refresh control circuit 101 sequentially receives multiple first refresh commands SB CMD and performs the first refresh operation, wherein the preset number value of the first refresh command SB CMD is For example, m equals 4. FIG. 5 shows the signal timing when the refresh control circuit 101 receives the second refresh command AB CMD and performs the second refresh operation.
另外,在图4和图5中,除第一刷新指令SB CMD、计数信号Bank Counter、计数复位信号Bank Counter Reset和SameBank刷新时钟信号SB CBR CLK之外,所有信号均示出了4个周期的波形,其中,每个周期的波形中若包括两个有效脉冲,则时序靠前的有效脉冲为第一脉冲,时序靠后的有效脉冲为第二脉冲。后续附图中的信号波形,也按照类似规则予以划分,后文不再赘述。In addition, in Figures 4 and 5, except for the first refresh command SB CMD, the count signal Bank Counter, the count reset signal Bank Counter Reset and the SameBank refresh clock signal SB CBR CLK, all signals show 4 cycles of Waveform, where if the waveform of each cycle includes two valid pulses, the valid pulse with earlier timing is the first pulse, and the valid pulse with later timing is the second pulse. The signal waveforms in subsequent figures are also divided according to similar rules and will not be described again.
在本公开的一些实施例中,如图3和图4所示,刷新控制电路101包括:刷新窗口信号生成电路201 和时钟脉冲生成电路202。In some embodiments of the present disclosure, as shown in FIGS. 3 and 4 , the refresh control circuit 101 includes: a refresh window signal generation circuit 201 and a clock pulse generation circuit 202 .
刷新窗口信号生成电路201用于接收多个第一刷新指令SB CMD(即图3示出的SB CMD<0>至SB CMD<m-1>)和刷新窗口复位信号Refresh Window Reset,根据多个第一刷新指令SB CMD和刷新窗口复位信号Refresh Window Reset生成刷新窗口信号Refresh Window。其中,参考图4,刷新窗口信号Refresh Window的脉冲持续时间为刷新控制电路101执行一次刷新操作的窗口时间,刷新窗口复位信号Refresh Window Reset用于在一次刷新操作结束后对刷新窗口信号生成电路201进行复位。这里,刷新控制电路101执行的刷新操作为第一刷新操作,即对第一刷新指令SB CMD对应的Bank执行第一刷新操作。The refresh window signal generation circuit 201 is used to receive a plurality of first refresh instructions SB CMD (ie, SB CMD<0> to SB CMD<m-1> shown in Figure 3) and a refresh window reset signal Refresh Window Reset. According to the plurality of The first refresh command SB CMD and the refresh window reset signal Refresh Window Reset generate the refresh window signal Refresh Window. Among them, referring to Figure 4, the pulse duration of the refresh window signal Refresh Window is the window time for the refresh control circuit 101 to perform a refresh operation, and the refresh window reset signal Refresh Window Reset is used to reset the refresh window signal generation circuit 201 after a refresh operation. Perform a reset. Here, the refresh operation performed by the refresh control circuit 101 is the first refresh operation, that is, the first refresh operation is performed on the Bank corresponding to the first refresh command SB CMD.
时钟脉冲生成电路202耦接刷新窗口信号生成电路201,用于接收刷新窗口信号Refresh Window和第一刷新指令SB CMD,在时钟脉冲生成电路202接收的第一刷新指令SB CMD的数量小于或等于m且第m次第一刷新操作结束前,生成第一时钟信号,或者,在第m次第一刷新操作结束后,生成第二时钟信号。参考图4,SameBank刷新时钟信号包括第一时钟信号和第二时钟信号,即第一时钟信号和第二时钟信号分别为SameBank刷新时钟信号不同时段的值。The clock pulse generation circuit 202 is coupled to the refresh window signal generation circuit 201 for receiving the refresh window signal Refresh Window and the first refresh command SB CMD. The number of the first refresh commands SB CMD received by the clock pulse generation circuit 202 is less than or equal to m. The first clock signal is generated before the m-th first refresh operation ends, or the second clock signal is generated after the m-th first refresh operation ends. Referring to Figure 4, the SameBank refresh clock signal includes a first clock signal and a second clock signal, that is, the first clock signal and the second clock signal are values of the SameBank refresh clock signal in different periods.
在本公开的一些实施例中,如图3和图4所示,时钟脉冲生成电路202包括:计数电路203、计数复位信号生成电路204和第一脉冲生成子电路205。In some embodiments of the present disclosure, as shown in FIGS. 3 and 4 , the clock pulse generating circuit 202 includes: a counting circuit 203 , a counting reset signal generating circuit 204 and a first pulse generating sub-circuit 205 .
计数电路203用于接收第一刷新指令SB CMD和计数复位信号Bank Counter Reset,对第一刷新指令SB CMD进行计数,并输出计数信号Bank Counter,以及,根据计数复位信号Bank Counter Reset进行复位。The counting circuit 203 is used to receive the first refresh command SB CMD and the count reset signal Bank Counter Reset, count the first refresh command SB CMD, and output the count signal Bank Counter, and reset according to the count reset signal Bank Counter Reset.
计数复位信号生成电路204耦接计数电路203和刷新窗口信号生成电路201,用于在第m次第一刷新操作结束后,生成计数复位信号Bank Counter Reset。The count reset signal generation circuit 204 is coupled to the counting circuit 203 and the refresh window signal generation circuit 201, and is used to generate a count reset signal Bank Counter Reset after the mth first refresh operation is completed.
第一脉冲生成子电路205耦接计数复位信号生成电路204,用于在第一刷新指令SB CMD小于m个时,根据计数信号BankCounter生成第一时钟信号,或者,在第一刷新指令SB CMD等于m个时根据计数复位信号Bank Counter Reset生成第二时钟信号。The first pulse generation sub-circuit 205 is coupled to the count reset signal generation circuit 204 and is used to generate a first clock signal according to the counting signal BankCounter when the first refresh instructions SB CMD are less than m, or when the first refresh instructions SB CMD are equal to m times, the second clock signal is generated according to the count reset signal Bank Counter Reset.
在本公开的一些实施例中,如图3和图4所示,刷新窗口信号生成电路201包括:多个刷新窗口子信号生成电路206和刷新窗口子信号处理电路207。In some embodiments of the present disclosure, as shown in FIG. 3 and FIG. 4 , the refresh window signal generation circuit 201 includes: a plurality of refresh window sub-signal generation circuits 206 and a refresh window sub-signal processing circuit 207 .
多个刷新窗口子信号生成电路206用于接收刷新窗口复位信号Refresh Window Reset且分别依次对应接收多个第一刷新指令SB CMD,根据多个第一刷新指令SB CMD和刷新窗口复位信号Refresh Window Reset依次输出多个刷新窗口子信号ReW(即图3示出的ReW<0>至ReW<m-1>)。The plurality of refresh window sub-signal generating circuits 206 are used to receive the refresh window reset signal Refresh Window Reset and respectively receive a plurality of first refresh instructions SB CMD in sequence. According to the plurality of first refresh instructions SB CMD and the refresh window reset signal Refresh Window Reset A plurality of refresh window sub-signals ReW (ie, ReW<0> to ReW<m-1> shown in FIG. 3) are output in sequence.
刷新窗口子信号处理电路207耦接多个刷新窗口子信号生成电路206,用于依次接收多个刷新窗口子信号ReW,对刷新窗口子信号ReW进行逻辑运算,输出刷新窗口信号Refresh Window。The refresh window sub-signal processing circuit 207 is coupled to multiple refresh window sub-signal generating circuits 206, and is used to receive multiple refresh window sub-signals ReW in sequence, perform logical operations on the refresh window sub-signals ReW, and output the refresh window signal Refresh Window.
在本公开的一些实施例中,如图3和图5所示,刷新控制电路101还用于接收第二刷新指令AB CMD并进行第二刷新操作。In some embodiments of the present disclosure, as shown in Figures 3 and 5, the refresh control circuit 101 is also used to receive the second refresh command AB CMD and perform the second refresh operation.
其中,多个刷新窗口子信号生成电路206还用于同时接收第二刷新指令AB CMD和刷新窗口复位信号Refresh Window Reset,根据第二刷新指令AB CMD和刷新窗口复位信号Refresh Window Reset一一对应生成相同的多个刷新窗口子信号ReW。Among them, multiple refresh window sub-signal generation circuits 206 are also used to simultaneously receive the second refresh command AB CMD and the refresh window reset signal Refresh Window Reset, and generate one-to-one correspondence according to the second refresh command AB CMD and the refresh window reset signal Refresh Window Reset. The same multiple refresh window sub-signals ReW.
刷新窗口子信号处理电路207还用于接收多个刷新窗口子信号ReW,并将刷新窗口子信号ReW进行逻辑运算,输出刷新窗口信号Refresh Window。The refresh window sub-signal processing circuit 207 is also used to receive multiple refresh window sub-signals ReW, perform logical operations on the refresh window sub-signals ReW, and output a refresh window signal Refresh Window.
需要说明的是,第二刷新操作是对Bank Group中的所有Bank同时进行的,即All Bank Refresh。在刷新控制电路101接收第二刷新指令AB CMD并进行第二刷新操作情况下,第一刷新指令SB CMD不包括有效的脉冲而保持低电平,即第一刷新指令SB CMD无效,进而,计数信号Bank Counter也保持低电平,计数刷新信号Bank Counter Reset也不产生有效的脉冲而保持低电平。It should be noted that the second refresh operation is performed on all banks in the Bank Group at the same time, that is, All Bank Refresh. When the refresh control circuit 101 receives the second refresh command AB CMD and performs the second refresh operation, the first refresh command SB CMD does not include a valid pulse and remains low, that is, the first refresh command SB CMD is invalid, and then the count The signal Bank Counter also remains low, and the count refresh signal Bank Counter Reset does not generate a valid pulse and remains low.
相应的,在刷新控制电路101依次接收多个第一刷新指令SB CMD并进行第一刷新操作情况下,第二刷新指令AB CMD不包括有效的脉冲而保持低电平,即第二刷新指令SB CMD无效。Correspondingly, when the refresh control circuit 101 receives multiple first refresh commands SB CMD in sequence and performs the first refresh operation, the second refresh command AB CMD does not include valid pulses and remains low, that is, the second refresh command SB CMD is invalid.
本公开实施例中,多个刷新窗口子信号生成电路206在接收多个第一刷新指令SB CMD时,由于多个第一刷新指令SB CMD各不相同,则生成的多个刷新窗口子信号ReW各不相同。而多个刷新窗口子信号生成电路206在接收第二刷新指令AB CMD时,其可以生成多个相同的刷新窗口子信号ReW。In the embodiment of the present disclosure, when multiple refresh window sub-signal generation circuits 206 receive multiple first refresh commands SB CMD, since the multiple first refresh commands SB CMD are different, the multiple refresh window sub-signals ReW generated are Each is different. When the multiple refresh window sub-signal generating circuits 206 receive the second refresh command AB CMD, they can generate multiple identical refresh window sub-signals ReW.
可以理解的是,刷新控制电路101可以根据需要依次接收多个第一刷新指令SB CMD并进行第一刷新操作情况,或者,接收第二刷新指令AB CMD并进行第二刷新操作。也就是说,采用一套刷新控制电路101便可以灵活进行两种刷新操作,这样,提高了电路的兼容性。It can be understood that the refresh control circuit 101 can sequentially receive multiple first refresh commands SB CMD and perform the first refresh operation as needed, or receive the second refresh command AB CMD and perform the second refresh operation. That is to say, using one set of refresh control circuit 101 can flexibly perform two refresh operations, thus improving the compatibility of the circuit.
在本公开的一些实施例中,如图3所示,刷新控制电路101还包括:第二脉冲生成子电路208、内部刷新窗口信号生成电路209、地址命令信号生成电路210和刷新窗口复位信号生成电路211。In some embodiments of the present disclosure, as shown in Figure 3, the refresh control circuit 101 also includes: a second pulse generation sub-circuit 208, an internal refresh window signal generation circuit 209, an address command signal generation circuit 210, and a refresh window reset signal generation circuit. Circuit 211.
本公开实施例中,参考图3、图4和图5,第二脉冲生成子电路208耦接刷新窗口子信号处理电路207,用于接收刷新窗口信号Refresh Window和地址命令信号Addr CMD,在刷新控制电路101开始进行第一刷新操作或第二刷新操作时生成第三时钟信号AB CBR CLK的第一脉冲,并根据地址命令信号Addr CMD的第一脉冲输出第三时钟信号AB CBR CLK的第二脉冲,从而输出第三时钟信号AB CBR CLK。In the embodiment of the present disclosure, with reference to Figures 3, 4 and 5, the second pulse generation sub-circuit 208 is coupled to the refresh window sub-signal processing circuit 207 for receiving the refresh window signal Refresh Window and the address command signal Addr CMD. During the refresh When the control circuit 101 starts to perform the first refresh operation or the second refresh operation, it generates the first pulse of the third clock signal AB CBR CLK, and outputs the second pulse of the third clock signal AB CBR CLK according to the first pulse of the address command signal Addr CMD. pulse, thereby outputting the third clock signal AB CBR CLK.
参考图4,在刷新控制电路101依次接收多个第一刷新指令SB CMD并进行第一刷新操作情况下,第三时钟信号AB CBR CLK的第一脉冲对齐于多个第一刷新指令SB CMD<0>~SB CMD<3>的有效脉冲,即第三时钟信号AB CBR CLK的第一脉冲在刷新控制电路101开始进行第一刷新操作时被生成;第三时钟信号AB CBR CLK的第二脉冲对齐于地址命令信号Addr CMD的第一脉冲,即第三时钟信号AB CBR CLK的第二脉冲是根据地址命令信号Addr CMD的第一脉冲而生成的。Referring to FIG. 4 , when the refresh control circuit 101 sequentially receives a plurality of first refresh commands SB CMD and performs a first refresh operation, the first pulse of the third clock signal AB CBR CLK is aligned with the plurality of first refresh commands SB CMD< The valid pulses of 0>~SB CMD<3>, that is, the first pulse of the third clock signal AB CBR CLK is generated when the refresh control circuit 101 starts to perform the first refresh operation; the second pulse of the third clock signal AB CBR CLK Aligned to the first pulse of the address command signal Addr CMD, that is, the second pulse of the third clock signal AB CBR CLK is generated based on the first pulse of the address command signal Addr CMD.
参考图5,在刷新控制电路101接收第二刷新指令AB CMD并进行第二刷新操作情况下,第三时钟 信号AB CBR CLK的第一脉冲对齐于第二刷新指令AB CMD的有效脉冲,即第三时钟信号AB CBR CLK的第一脉冲在刷新控制电路101开始进行第二刷新操作时被生成;第三时钟信号AB CBR CLK的第二脉冲对齐于地址命令信号Addr CMD的第一脉冲,即第三时钟信号AB CBR CLK的第二脉冲是根据地址命令信号Addr CMD的第一脉冲而生成的。Referring to Figure 5, when the refresh control circuit 101 receives the second refresh command AB CMD and performs the second refresh operation, the first pulse of the third clock signal AB CBR CLK is aligned with the effective pulse of the second refresh command AB CMD, that is, the first pulse of the third clock signal AB CBR CLK is aligned with the valid pulse of the second refresh command AB CMD. The first pulse of the third clock signal AB CBR CLK is generated when the refresh control circuit 101 starts to perform the second refresh operation; the second pulse of the third clock signal AB CBR CLK is aligned with the first pulse of the address command signal Addr CMD, that is, the second pulse of the third clock signal AB CBR CLK. The second pulse of the three clock signals AB CBR CLK is generated based on the first pulse of the address command signal Addr CMD.
本公开实施例中,参考图3、图4和图5,内部刷新窗口信号生成电路209接收第三时钟信号AB CBR CLK,用于根据第三时钟信号AB CBR CLK生成内部刷新窗口信号Inner ACT Window;其中,内部刷新窗口信号Inner ACT Window的第一脉冲在第三时钟信号AB CBR CLK的第一脉冲之后产生,且在第三时钟信号AB CBR CLK的第二脉冲产生之前结束;内部刷新窗口信号Inner ACT Window的第二脉冲在第三时钟信号AB CBR CLK的第二脉冲之后产生,且在刷新窗口信号Refresh Window的脉冲结束之前结束。需要说明的是,存储器中的刷新控制器会接收内部刷新窗口信号Inner ACT Window和待刷新地址Adress并根据内部刷新窗口信号Inner ACT Window对存储单元进行刷新,因此内部刷新窗口信号Inner ACT Window脉冲的持续时间为对存储单元进行刷新的时间。In the disclosed embodiment, referring to Figures 3, 4 and 5, the internal refresh window signal generation circuit 209 receives the third clock signal AB CBR CLK and is used to generate the internal refresh window signal Inner ACT Window according to the third clock signal AB CBR CLK. ; Among them, the first pulse of the internal refresh window signal Inner ACT Window is generated after the first pulse of the third clock signal AB CBR CLK, and ends before the second pulse of the third clock signal AB CBR CLK is generated; the internal refresh window signal The second pulse of the Inner ACT Window is generated after the second pulse of the third clock signal AB CBR CLK and ends before the pulse of the refresh window signal Refresh Window ends. It should be noted that the refresh controller in the memory will receive the internal refresh window signal Inner ACT Window and the address to be refreshed Adress and refresh the storage unit according to the internal refresh window signal Inner ACT Window, so the internal refresh window signal Inner ACT Window pulse The duration is the time for the storage unit to be refreshed.
本公开实施例中,参考图3、图4和图5,地址命令信号生成电路210用于根据内部刷新窗口信号Inner ACT Window的下降沿生成地址命令信号Addr CMD的第一脉冲和第二脉冲;其中,地址命令信号Addr CMD的第一脉冲用于生成内部刷新窗口信号Inner ACT Window的第二脉冲以及第三时钟信号AB CBR CLK的第二脉冲。内部刷新窗口信号Inner ACT Window的一个下降沿表征一个地址的刷新结束,从而产生地址命令信号Addr CMD去控制产生下一个地址。In the embodiment of the present disclosure, with reference to Figures 3, 4 and 5, the address command signal generation circuit 210 is used to generate the first pulse and the second pulse of the address command signal Addr CMD according to the falling edge of the internal refresh window signal Inner ACT Window; Among them, the first pulse of the address command signal Addr CMD is used to generate the second pulse of the internal refresh window signal Inner ACT Window and the second pulse of the third clock signal AB CBR CLK. A falling edge of the internal refresh window signal Inner ACT Window indicates the end of the refresh of an address, thereby generating the address command signal Addr CMD to control the generation of the next address.
参考图4和图5,内部刷新窗口信号Inner ACT Window的有效脉冲可以被压缩和移位,从而得到内部预命令信号Inner PRE CMD的有效脉冲,也就是说,首先根据内部刷新窗口信号Inner ACT Window的下降沿得到内部预命令信号Inner PRE CMD的下降沿;而后,地址命令信号生成电路210可以根据内部预命令信号Inner PRE CMD的下降沿生成地址命令信号Addr CMD的第一脉冲和第二脉冲。Referring to Figure 4 and Figure 5, the effective pulse of the internal refresh window signal Inner ACT Window can be compressed and shifted to obtain the effective pulse of the internal pre-command signal Inner PRE CMD. That is to say, first according to the internal refresh window signal Inner ACT Window The falling edge of the internal pre-command signal Inner PRE CMD is obtained; then, the address command signal generation circuit 210 can generate the first pulse and the second pulse of the address command signal Addr CMD according to the falling edge of the internal pre-command signal Inner PRE CMD.
本公开实施例中,参考图3、图4和图5,刷新窗口复位信号生成电路211接收内部刷新窗口信号Inner ACT Window,用于根据内部刷新窗口信号Inner ACT Window的第二脉冲的下降沿生成刷新窗口复位信号Refresh Window Reset的脉冲。In the embodiment of the present disclosure, with reference to Figures 3, 4 and 5, the refresh window reset signal generation circuit 211 receives the internal refresh window signal Inner ACT Window and is used to generate the signal based on the falling edge of the second pulse of the internal refresh window signal Inner ACT Window. Refresh window reset signal Refresh Window Reset pulse.
在本公开的一些实施例中,如图3所示,刷新控制电路101还包括:信号选择电路212。In some embodiments of the present disclosure, as shown in FIG. 3 , the refresh control circuit 101 further includes: a signal selection circuit 212 .
本公开实施例中,参考图3、4和5,信号选择电路212耦接计数电路203、第一脉冲生成子电路205和第二脉冲生成子电路208,用于接收计数信号Bank Counter、第一时钟信号、第二时钟信号(第一时钟信号和第二时钟信号即SameBank刷新时钟信号SB CBR CLK)和第三时钟信号AB CBR CLK,在刷新控制电路101进行第一刷新操作时,根据计数信号Bank Counter输出第一时钟信号或第二时钟信号,或者,在刷新控制电路101进行第二刷新操作时,根据计数信号Bank Counter输出第三时钟信号AB CBR CLK。In the embodiment of the present disclosure, with reference to Figures 3, 4 and 5, the signal selection circuit 212 is coupled to the counting circuit 203, the first pulse generating sub-circuit 205 and the second pulse generating sub-circuit 208 for receiving the counting signal Bank Counter, the first The clock signal, the second clock signal (the first clock signal and the second clock signal are the SameBank refresh clock signal SB CBR CLK) and the third clock signal AB CBR CLK, when the refresh control circuit 101 performs the first refresh operation, according to the count signal The Bank Counter outputs the first clock signal or the second clock signal, or when the refresh control circuit 101 performs the second refresh operation, the Bank Counter outputs the third clock signal AB CBR CLK according to the counting signal.
参考图3和图4,在刷新控制电路101进行第一刷新操作的情况下,若任一计数信号Bank Counter为高电平,则信号选择电路212输出第一时钟信号,即输出SameBank刷新时钟信号SB CBR CLK为低电平,若所有计数信号Bank Counter均跳转为低电平,则信号选择电路212输出第二时钟信号,即输出SameBank刷新时钟信号SB CBR CLK中两个连续的有效脉冲。Referring to Figures 3 and 4, when the refresh control circuit 101 performs the first refresh operation, if any count signal Bank Counter is high level, the signal selection circuit 212 outputs the first clock signal, that is, outputs the SameBank refresh clock signal. SB CBR CLK is low level. If all count signals Bank Counter jump to low level, the signal selection circuit 212 outputs the second clock signal, that is, outputs two consecutive valid pulses in the SameBank refresh clock signal SB CBR CLK.
参考图3和图5,在刷新控制电路101进行第二刷新操作的情况下,所有计数信号Bank Counter均保持低电平(图5未示出),则信号选择电路212输出第三时钟信号AB CBR CLK中的有效脉冲。Referring to Figures 3 and 5, when the refresh control circuit 101 performs the second refresh operation, all count signals Bank Counter remain low (not shown in Figure 5), then the signal selection circuit 212 outputs the third clock signal AB CBR valid pulse in CLK.
在本公开的一些实施例中,如图3所示,刷新控制电路101还包括:地址标志信号生成电路213。In some embodiments of the present disclosure, as shown in FIG. 3 , the refresh control circuit 101 further includes: an address flag signal generating circuit 213 .
本公开实施例中,参考图3、图4和图5,地址标志信号生成电路213耦接地址命令信号生成电路210和刷新窗口子信号处理电路207,用于接收地址命令信号Addr CMD和刷新窗口信号Refresh Window,根据地址命令信号Addr CMD的第一个上升沿生成地址标志信号Addr Flag的上升沿,根据刷新窗口信号Refresh Window的下降沿生成地址标志信号Addr Flag的下降沿。In the embodiment of the present disclosure, referring to Figures 3, 4 and 5, the address flag signal generation circuit 213 is coupled to the address command signal generation circuit 210 and the refresh window sub-signal processing circuit 207 for receiving the address command signal Addr CMD and the refresh window. The signal Refresh Window generates the rising edge of the address flag signal Addr Flag according to the first rising edge of the address command signal Addr CMD, and generates the falling edge of the address flag signal Addr Flag according to the falling edge of the refresh window signal Refresh Window.
在本公开的一些实施例中,如图6所示,重复命令处理电路102包括:重复指令确定电路401和额外刷新标志信号生成电路402。In some embodiments of the present disclosure, as shown in FIG. 6 , the repeated command processing circuit 102 includes: a repeated command determining circuit 401 and an additional refresh flag signal generating circuit 402 .
重复指令确定电路401耦接计数电路203,用于接收第一刷新指令SB CMD和计数信号Bank Counter,在第一刷新指令SB CMD中未出现重复指令时不进行输出,以及,在第一刷新指令SB CMD中出现重复指令时输出重复指令Extra CMD。The repeated instruction determination circuit 401 is coupled to the counting circuit 203 for receiving the first refresh instruction SB CMD and the counting signal Bank Counter, and does not output when there is no repeated instruction in the first refresh instruction SB CMD, and when the first refresh instruction SB CMD When a repeated command occurs in SB CMD, the repeated command Extra CMD is output.
额外刷新标志信号生成电路402耦接重复指令确定电路401和刷新窗口信号生成电路201,用于接收重复指令Extra CMD和刷新窗口信号Refresh Window,根据重复指令Extra CMD和刷新窗口信号Refresh Window生成额外刷新标志信号Extra Refresh Flag;其中,额外刷新标志信号Extra Refresh Flag的上升沿是根据重复指令Extra CMD的有效脉冲而生成的,额外刷新标志信号Extra Refresh Flag的下降沿是根据刷新窗口信号Refresh Window的下降沿而生成的。The extra refresh flag signal generation circuit 402 is coupled to the repetition instruction determination circuit 401 and the refresh window signal generation circuit 201, and is used to receive the repetition instruction Extra CMD and the refresh window signal Refresh Window, and generate additional refresh according to the repetition instruction Extra CMD and the refresh window signal Refresh Window. Flag signal Extra Refresh Flag; among them, the rising edge of the extra refresh flag signal Extra Refresh Flag is generated based on the valid pulse of the repeated instruction Extra CMD, and the falling edge of the extra refresh flag signal Extra Refresh Flag is based on the falling edge of the refresh window signal Refresh Window. generated along.
图7以第一刷新指令SB CMD的预设数量值m等于4为例,示意出了图6中各信号的波形。本公开实施例中,结合图6和图7,重复指令是指对某个Bank额外多发出的刷新指令,如图7所示,第一刷新指令SB CMD<0>中包括了两个脉冲,前一个脉冲已经触发了Bank0的第一刷新操作,则后一个脉冲即为重复指令。重复指令确定电路401可以根据计数信号Bank Counter来确定对应的在第一刷新指令SB CMD中是否出现重复指令。例如,图7中除重复指令以外的正常第一刷新指令SB CMD<0>~SB CMD<3>,其脉冲的时序与对应的计数信号Bank Counter<0>~Bank Counter<3>的上升沿一一对齐;而第一刷新指令SB CMD<0>中的重复指令,其脉冲的时序仅对齐于计数信号Bank Counter<0>的高电平状态,因此,可以通过正常第一刷新指令与重复指令在时序上的区别,确定出重复指令。Figure 7 takes the preset quantity value m of the first refresh command SB CMD as an example, which is equal to 4, and illustrates the waveforms of each signal in Figure 6. In this disclosed embodiment, combined with Figure 6 and Figure 7, the repeated command refers to an additional refresh command issued to a certain bank. As shown in Figure 7, the first refresh command SB CMD<0> includes two pulses, The previous pulse has triggered the first refresh operation of Bank0, and the next pulse is a repeated instruction. The repeated instruction determination circuit 401 can determine whether a repeated instruction occurs in the corresponding first refresh instruction SB CMD according to the count signal Bank Counter. For example, in Figure 7, the normal first refresh instructions SB CMD<0>~SB CMD<3> except for the repeated instructions, the pulse timing is the same as the rising edge of the corresponding count signal Bank Counter<0>~Bank Counter<3> Aligned one by one; and the pulse timing of the repeated instruction in the first refresh instruction SB CMD<0> is only aligned with the high level state of the count signal Bank Counter<0>. Therefore, the normal first refresh instruction and the repeated instruction can be The difference in timing of instructions determines the duplicate instructions.
继续参考图6和图7,重复指令确定电路401在确定出重复指令后,可以将重复指令的有效脉冲输出,即输出重复指令Extra CMD(图7中未示出)。额外刷新标志信号生成电路402接收到重复指令Extra CMD后,可以响应于重复指令Extra CMD中的有效脉冲,将额外刷新标志信号Extra Refresh Flag由低电平跳转为高电平,即额外刷新标志信号Extra Refresh Flag的上升沿是根据重复指令Extra CMD的有效脉冲而生成的。额外刷新标志信号生成电路402还接收刷新窗口信号Refresh Window,可以响应于刷新窗口信号Refresh Window,将额外刷新标志信号Extra Refresh Flag由高电平跳转为低电平,即额外刷新标志信号Extra Refresh Flag的下降沿是根据刷新窗口信号Refresh Window的下降沿而生成的。Continuing to refer to Figures 6 and 7, after determining the repeated command, the repeated command determination circuit 401 can output the valid pulse of the repeated command, that is, output the repeated command Extra CMD (not shown in Figure 7). After the extra refresh flag signal generation circuit 402 receives the repeated command Extra CMD, it can respond to the valid pulse in the repeated command Extra CMD and jump the extra refresh flag signal Extra Refresh Flag from low level to high level, that is, the extra refresh flag The rising edge of the signal Extra Refresh Flag is generated based on the valid pulse of the repeat command Extra CMD. The extra refresh flag signal generation circuit 402 also receives the refresh window signal Refresh Window, and can respond to the refresh window signal Refresh Window by jumping the extra refresh flag signal Extra Refresh Flag from high level to low level, that is, the extra refresh flag signal Extra Refresh The falling edge of Flag is generated based on the falling edge of the refresh window signal Refresh Window.
在本公开的一些实施例中,参考图8,地址产生器103包括:地址计数器301和地址处理电路302。In some embodiments of the present disclosure, referring to FIG. 8 , the address generator 103 includes: an address counter 301 and an address processing circuit 302 .
地址计数器301耦接信号选择电路212,用于预存第一地址,并从信号选择电路212接收SameBank刷新时钟信号SB CBR CLK或第三时钟信号AB CBR CLK(图6中未示出)。地址计数器301可以根据SameBank刷新时钟信号SB CBR CLK中的第二时钟信号改变第一地址为第三地址,或者,根据第三时钟信号AB CBR CLK改变第一地址并输出第四地址和第五地址。The address counter 301 is coupled to the signal selection circuit 212, used to prestore the first address, and receives the SameBank refresh clock signal SB CBR CLK or the third clock signal AB CBR CLK (not shown in Figure 6) from the signal selection circuit 212. The address counter 301 can change the first address to the third address according to the second clock signal in the SameBank refresh clock signal SB CBR CLK, or change the first address and output the fourth address and the fifth address according to the third clock signal AB CBR CLK. .
地址处理电路302耦接地址计数器301、刷新窗口子信号生成电路206和重复命令处理电路102,用于在刷新控制电路进行第一刷新操作时接收地址标志信号Addr Flag,并获取第一地址,若未接收到额外刷新标志信号Extra Refresh Flag,则根据地址标志信号Addr Flag输出第一地址或第二地址,若接收到额外刷新标志信号Extra Refresh Flag,则在额外刷新标志信号Extra Refresh Flag的窗口时间内输出额外地址;The address processing circuit 302 is coupled to the address counter 301, the refresh window sub-signal generation circuit 206 and the repeated command processing circuit 102, and is used to receive the address flag signal Addr Flag when the refresh control circuit performs the first refresh operation, and obtain the first address. If the Extra Refresh Flag signal is not received, the first address or the second address will be output according to the address flag signal Addr Flag. If the Extra Refresh Flag signal is received, the first address or the second address will be output within the window time of the Extra Refresh Flag signal. Internally output additional addresses;
地址处理电路302,还用于在刷新控制电路进行第二刷新操作时,依次获取第四地址和第五地址,并根据多个刷新窗口子信号ReW依次输出第四地址和第五地址。The address processing circuit 302 is also configured to sequentially obtain the fourth address and the fifth address when the refresh control circuit performs the second refresh operation, and sequentially output the fourth address and the fifth address according to the plurality of refresh window sub-signals ReW.
本公开实施例中,在刷新控制电路进行第一刷新操作,且地址处理电路302未接收到额外刷新标志信号Extra Refresh Flag的情况下,第一地址为预存的地址,第二地址则是相邻于第一地址,即第一地址和第二地址为连续的两个地址。因此,第三地址在第一地址的基础上累加了数值2,避免对相同的地址重复进行第一刷新操作。这样,在所有的Bank完成了对第一地址和第二地址的第一刷新操作后,第一地址被累加数值2变为第三地址,刷新控制电路可以将第三地址作为预存的地址,来进行新一轮的第一刷新操作,从而保证了第一刷新操作不遗漏地进行。In the embodiment of the present disclosure, when the refresh control circuit performs the first refresh operation and the address processing circuit 302 does not receive the extra refresh flag signal Extra Refresh Flag, the first address is a prestored address, and the second address is an adjacent address. As for the first address, that is, the first address and the second address are two consecutive addresses. Therefore, the third address accumulates the value 2 on the basis of the first address to avoid repeating the first refresh operation on the same address. In this way, after all banks have completed the first refresh operation of the first address and the second address, the first address is converted into the third address by the accumulated value 2, and the refresh control circuit can use the third address as a pre-stored address. A new round of the first refresh operation is performed, thereby ensuring that the first refresh operation is performed without missing a beat.
本公开实施例中,在刷新控制电路进行第二刷新操作的情况下,第一地址为预存的地址,第四地址在第一地址的基础上累加了数值1,第五地址则在第四地址的基础上累加了数值1,也就是说,第一地址、第四地址和第五地址为依次连续的三个地址。这样,刷新控制电路101可以按照地址顺序对所有Bank的地址依次进行第二刷新操作,从而保证了第二刷新操作不遗漏地进行。In the embodiment of the present disclosure, when the refresh control circuit performs the second refresh operation, the first address is a prestored address, the fourth address has a value of 1 accumulated on the basis of the first address, and the fifth address is at the fourth address. The value 1 is accumulated on the basis of , that is to say, the first address, the fourth address and the fifth address are three consecutive addresses in sequence. In this way, the refresh control circuit 101 can sequentially perform the second refresh operation on the addresses of all banks in address order, thereby ensuring that the second refresh operation is performed without missing a beat.
本公开实施例中,结合图4和图8,在信号选择电路212输出第二时钟信号(即SB CBR CLK中的两个有效脉冲)到地址计数器301的情况下,地址计数器301可以根据第二时钟信号的两个有效脉冲,依次在第一地址的基础上累加数值2,从而得到第三地址。在信号选择电路212输出第三时钟信号AB CBR CLK到地址计数器301的情况下,地址计数器301可以根据第三时钟信号AB CBR CLK的第一脉冲在第一地址的基础上累加数值1,得到第四地址,而后,地址计数器301可以根据第三时钟信号AB CBR CLK的第二脉冲在第四地址的基础上累加数值1,得到第五地址。In the embodiment of the present disclosure, in conjunction with Figure 4 and Figure 8, when the signal selection circuit 212 outputs the second clock signal (ie, the two valid pulses in SB CBR CLK) to the address counter 301, the address counter 301 can be based on the second clock signal. The two valid pulses of the clock signal sequentially accumulate the value 2 on the basis of the first address, thereby obtaining the third address. When the signal selection circuit 212 outputs the third clock signal AB CBR CLK to the address counter 301, the address counter 301 can accumulate the value 1 on the basis of the first address according to the first pulse of the third clock signal AB CBR CLK to obtain the third four addresses, and then the address counter 301 can accumulate the value 1 based on the fourth address according to the second pulse of the third clock signal AB CBR CLK to obtain the fifth address.
本公开实施例中,在刷新控制电路进行第一刷新操作,且地址处理电路302接收到额外刷新标志信号Extra Refresh Flag的情况下,地址处理电路302在额外刷新标志信号Extra Refresh Flag的窗口时间内输出额外地址。结合图2和图8,地址处理电路302可以根据额外刷新标志信号Extra Refresh Flag的两个不同电平,选择目标位或取反后的目标位进行输出。当额外刷新标志信号Extra Refresh Flag为低电平时,地址处理电路302可以选择目标位进行输出,并与除目标位以外的地址位组合成常规地址n或n+1进行输出;当额外刷新标志信号Extra Refresh Flag为高电平时,地址处理电路302可以选择取反后的目标位进行输出,并与除目标位以外的地址位组合成额外地址k或k+1进行输出,其中,额外地址k是对第一地址n的目标位取反后得到的,额外地址k+1是对第二地址n+1的目标位取反后得到的。In the embodiment of the present disclosure, when the refresh control circuit performs the first refresh operation and the address processing circuit 302 receives the extra refresh flag signal Extra Refresh Flag, the address processing circuit 302 operates within the window time of the extra refresh flag signal Extra Refresh Flag. Output additional addresses. Combining Figure 2 and Figure 8, the address processing circuit 302 can select the target bit or the inverted target bit for output according to two different levels of the extra refresh flag signal Extra Refresh Flag. When the extra refresh flag signal Extra Refresh Flag is low level, the address processing circuit 302 can select the target bit for output, and combine it with the address bits other than the target bit to form a regular address n or n+1 for output; when the extra refresh flag signal When the Extra Refresh Flag is high, the address processing circuit 302 can select the inverted target bit for output, and combine it with the address bits other than the target bit to form an additional address k or k+1 for output, where the additional address k is It is obtained by inverting the target bit of the first address n, and the additional address k+1 is obtained by inverting the target bit of the second address n+1.
例如,第一地址n为“0000 0000 0000 0010”,则第二地址n+1为“0000 0000 0000 0011”,常规地址包括了该第一地址n和第二地址n+1。而目标位是从左往右的第二位(即次高位),这样,将第一地址n中的目标位取反可以得到额外地址k为“0100 0000 0000 0010”,将第二地址中的目标位取反可以得到额外地址k+1为“0100 0000 0000 0011”。需要说明的是,目标位可以是高于预设位的任一地址位,例如,预设位是从左往右的第三位,则目标位可以是从左往右的第一位(即最高位)或者从左往右的第二位(即次高位)。For example, the first address n is "0000 0000 0000 0010", then the second address n+1 is "0000 0000 0000 0011", and the regular address includes the first address n and the second address n+1. The target bit is the second bit from left to right (i.e., the second highest bit). In this way, by inverting the target bit in the first address n, we can get the additional address k as "0100 0000 0000 0010". Inverting the target bit can obtain the additional address k+1 as "0100 0000 0000 0011". It should be noted that the target bit can be any address bit higher than the preset bit. For example, if the preset bit is the third bit from left to right, then the target bit can be the first bit from left to right (i.e. The highest digit) or the second digit from left to right (i.e. the second highest digit).
可以理解的是,地址产生器103在额外刷新标志信号Extra Refresh Flag的触发下,选择目标位或者取反后的目标位进行输出,从而可以在第一刷新指令中出现多余的重复指令时,输出额外地址。如此,利用第一刷新指令中多余的重复指令,对有刷新需要的额外地址进行刷新,避免了指令的浪费,提高了刷新效率。It can be understood that the address generator 103 selects the target bit or the inverted target bit for output when triggered by the extra refresh flag signal Extra Refresh Flag, so that when redundant repeated instructions appear in the first refresh instruction, the address generator 103 can output Additional address. In this way, the extra repeated instructions in the first refresh instruction are used to refresh the additional addresses that need to be refreshed, thereby avoiding the waste of instructions and improving the refresh efficiency.
在本公开的一些实施例中,如图9所示,地址处理电路302包括:控制信号生成电路303、地址选择电路304和额外地址生成电路305。In some embodiments of the present disclosure, as shown in FIG. 9 , the address processing circuit 302 includes: a control signal generation circuit 303 , an address selection circuit 304 and an additional address generation circuit 305 .
控制信号生成电路303耦接刷新窗口子信号生成电路206和地址标志信号生成电路213,用于接收多个刷新窗口子信号ReW和地址标志信号Addr Flag,根据多个刷新窗口子信号ReW和地址标志信号Addr Flag生成地址控制信号Addr Ctrl。The control signal generation circuit 303 is coupled to the refresh window sub-signal generation circuit 206 and the address flag signal generation circuit 213, and is used to receive a plurality of refresh window sub-signals ReW and an address flag signal Addr Flag, according to the plurality of refresh window sub-signals ReW and address flags. The signal Addr Flag generates the address control signal Addr Ctrl.
地址选择电路304,耦接地址计数器301和控制信号生成电路303,用于在刷新控制电路101接收第一刷新指令SB CMD时,在地址控制信号Addr Ctrl的上升沿到来前输出第一地址,或者,在地址控制信 号Addr Ctrl的上升沿到来后在第一地址的基础上进行累加,得到并输出第二地址。地址选择电路304还用于在刷新控制电路101接收第二刷新指令AB CMD时,响应于地址控制信号Addr Ctrl,依次输出第四地址和第五地址。The address selection circuit 304 is coupled to the address counter 301 and the control signal generation circuit 303, and is used to output the first address before the rising edge of the address control signal Addr Ctrl arrives when the refresh control circuit 101 receives the first refresh command SB CMD, or , after the rising edge of the address control signal Addr Ctrl arrives, the accumulation is performed on the basis of the first address, and the second address is obtained and output. The address selection circuit 304 is also configured to sequentially output the fourth address and the fifth address in response to the address control signal Addr Ctrl when the refresh control circuit 101 receives the second refresh command AB CMD.
额外地址生成电路305耦接地址选择电路304,用于在刷新控制电路101进行第一刷新操作,且额外地址生成电路305未接收到额外刷新标志信号Extra Refresh Flag时,接收并输出第一地址或第二地址。或者,额外地址生成电路305用于在刷新控制电路101进行第一刷新操作,且额外地址生成电路305接收到额外刷新标志信号Extra Refresh Flag时,接收第一地址或第二地址,根据额外刷新标志信号Extra Refresh Flag将第一地址或第二地址中的目标位取反,得到并输出额外地址,其中,目标位为第一地址和第二地址中高于预设位的任一地址位。或者,额外地址生成电路305用于在刷新控制电路101进行第二刷新操作时,接收并输出第四地址或第五地址。The extra address generation circuit 305 is coupled to the address selection circuit 304 and is used to receive and output the first address or Second address. Alternatively, the extra address generation circuit 305 is used to receive the first address or the second address according to the extra refresh flag when the refresh control circuit 101 performs the first refresh operation and the extra address generation circuit 305 receives the extra refresh flag signal Extra Refresh Flag. The signal Extra Refresh Flag inverts the target bit in the first address or the second address to obtain and output an additional address, where the target bit is any address bit in the first address or the second address that is higher than the preset bit. Alternatively, the additional address generation circuit 305 is configured to receive and output the fourth address or the fifth address when the refresh control circuit 101 performs the second refresh operation.
在本公开的一些实施例中,如图10所示,计数电路203包括:多个第一反相器D1、多个第一锁存器L1和第二反相器D2。多个第一反相器D1的输入端依次接收多个第一刷新指令SB CMD。第二反相器D2的输入端接收计数复位信号Bank Counter Reset。多个第一锁存器L1的置位端依次对应连接多个第一反相器D1的输出端,多个第一锁存器L1的复位端均连接第二反相器D2的输出端,多个第一锁存器L1依次对应输出多个计数信号Bank Counter。In some embodiments of the present disclosure, as shown in FIG. 10 , the counting circuit 203 includes: a plurality of first inverters D1, a plurality of first latches L1, and a second inverter D2. The input terminals of the plurality of first inverters D1 receive a plurality of first refresh commands SB CMD in sequence. The input terminal of the second inverter D2 receives the count reset signal Bank Counter Reset. The set terminals of the plurality of first latches L1 are connected to the output terminals of the plurality of first inverters D1 in sequence, and the reset terminals of the plurality of first latches L1 are connected to the output terminals of the second inverter D2. A plurality of first latches L1 correspondingly output a plurality of counting signals Bank Counter in sequence.
本公开实施例中,图11为m=4时的信号时序图,结合图10和图11,每个第一刷新指令SB CMD中的有效脉冲可以触发对应的计数信号Bank Counter由低电平跳转为高电平,如第一刷新指令SB CMD<0>中的脉冲可以触发计数信号Bank Counter<0>由低电平变为高电平,同样的,第一刷新指令SB CMD<1>、SB CMD<2>和SB CMD<3>中的脉冲可以分别触发计数信号Bank Counter<1>、Bank Counter<2>和Bank Counter<3>由低电平变为高电平。而计数复位信号Bank Counter Reset中的有效脉冲可以触发所有的计数信号Bank Counter<0>~Bank Counter<3>由高电平跳转为低电平。计数复位信号Bank Counter Reset中的有效脉冲,在刷新控制电路完成第m次第一刷新操作后生成。In the embodiment of the present disclosure, Figure 11 is a signal timing diagram when m=4. Combining Figures 10 and 11, each valid pulse in the first refresh command SB CMD can trigger the corresponding count signal Bank Counter to jump from a low level. to high level. For example, the pulse in the first refresh command SB CMD<0> can trigger the count signal Bank Counter<0> to change from low level to high level. Similarly, the first refresh command SB CMD<1> , The pulses in SB CMD<2> and SB CMD<3> can trigger the counting signals Bank Counter<1>, Bank Counter<2> and Bank Counter<3> respectively from low level to high level. The valid pulse in the count reset signal Bank Counter Reset can trigger all count signals Bank Counter<0>~Bank Counter<3> to jump from high level to low level. The valid pulse in the count reset signal Bank Counter Reset is generated after the refresh control circuit completes the m-th first refresh operation.
在本公开的一些实施例中,如图12所示,计数复位信号生成电路204包括:第一与门A1、第三反相器D3、第二与门A2、第一延时器H1、第四反相器D4和第三与门A3。第一与门A1的输入端接收多个计数信号Bank Counter。第三反相器D3的输入端接收刷新窗口信号Refresh Window。第二与门A2的输入端分别连接第一与门A1的输出端和第三反相器D3的输出端。第一延时器H1的输入端连接第二与门A2的输出端。第四反相器D4的输入端连接第一延时器H1的输出端。第三与门A3的输入端分别连接第二与门A2的输出端和第四反相器D4的输出端,第三与门A3输出计数复位信号Bank Counter Reset。In some embodiments of the present disclosure, as shown in Figure 12, the count reset signal generation circuit 204 includes: a first AND gate A1, a third inverter D3, a second AND gate A2, a first delayer H1, a third Quad inverter D4 and third AND gate A3. The input terminal of the first AND gate A1 receives multiple counting signals Bank Counter. The input terminal of the third inverter D3 receives the refresh window signal Refresh Window. The input terminal of the second AND gate A2 is respectively connected to the output terminal of the first AND gate A1 and the output terminal of the third inverter D3. The input terminal of the first delayer H1 is connected to the output terminal of the second AND gate A2. The input terminal of the fourth inverter D4 is connected to the output terminal of the first delay device H1. The input terminal of the third AND gate A3 is respectively connected to the output terminal of the second AND gate A2 and the output terminal of the fourth inverter D4. The third AND gate A3 outputs a count reset signal Bank Counter Reset.
在本公开的一些实施例中,如图13所示,第一脉冲生成子电路205包括:第二延时器H2、第三延时器H3和第一或门B1。第二延时器H2的输入端接收计数复位信号Bank Counter Reset。第三延时器H3的输入端连接第二延时器H2的输出端。第一或门B1的输入端分别连接第二延时器H2的输出端和第三延时器H3的输出端,第一或门B1输出第一时钟信号或第二时钟信号,也就是说,第一或门B1输出SameBank刷新时钟信号SB CBR CLK。In some embodiments of the present disclosure, as shown in Figure 13, the first pulse generation sub-circuit 205 includes: a second delayer H2, a third delayer H3 and a first OR gate B1. The input terminal of the second delayer H2 receives the count reset signal Bank Counter Reset. The input terminal of the third delayer H3 is connected to the output terminal of the second delayer H2. The input terminals of the first OR gate B1 are respectively connected to the output terminals of the second delayer H2 and the output terminal of the third delayer H3. The first OR gate B1 outputs the first clock signal or the second clock signal, that is to say, The first OR gate B1 outputs the SameBank refresh clock signal SB CBR CLK.
本公开实施例中,图14为m=4时的信号时序图,结合图12、图13和图14,在进行第一刷新操作的情况下,计数复位信号Bank Counter Reset中的脉冲基于计数信号Bank Counter<0>、Bank Counter<1>、Bank Counter<2>、Bank Counter<3>和刷新窗口信号Refresh Window而生成。计数复位信号Bank Counter Reset中的一个有效脉冲,经过第二延时器H2、第三延时器H3和第一或门B1后,生成SB CBR CLK中的两个有效脉冲。其中,第一延时器H1可以将接收到的信号延时0~2ns,第二延时器H2可以将接收到的信号延时1~3ns,第三延时器H3可以将接收到的信号延时4~6ns。In the embodiment of the present disclosure, Figure 14 is a signal timing diagram when m=4. Combining Figures 12, 13 and 14, when the first refresh operation is performed, the pulses in the count reset signal Bank Counter Reset are based on the count signal Bank Counter<0>, Bank Counter<1>, Bank Counter<2>, Bank Counter<3> and the refresh window signal Refresh Window are generated. A valid pulse in the count reset signal Bank Counter Reset, after passing through the second delayer H2, the third delayer H3 and the first OR gate B1, generates two valid pulses in the SB CBR CLK. Among them, the first delayer H1 can delay the received signal by 0~2ns, the second delayer H2 can delay the received signal by 1~3ns, and the third delayer H3 can delay the received signal by 0~2ns. The delay is 4~6ns.
在本公开的一些实施例中,如图15所示,刷新窗口子信号包括:第一刷新窗口子信号ReW<i>或第二刷新窗口子信号ReW<AB>。每个刷新窗口子信号生成电路206包括:第一或非门E1和第二锁存器L2。当刷新控制电路进行第一刷新操作时,第一或非门E1的第一输入端接收对应的第一刷新指令SBCMD<i>,或者,当刷新控制电路进行第二刷新操作时,第一或非门E1的第二输入端接收第二刷新指令AB CMD。第二锁存器L2的置位端连接第一或非门E1的输出端,第二锁存器L2的复位端接收刷新窗口复位信号Refresh Window Reset;当刷新控制电路进行第一刷新操作时,第二锁存器L2输出对应的第一刷新窗口子信号ReW<i>,或者,当刷新控制电路进行第二刷新操作时,第二锁存器L2输出对应的第二刷新窗口子信号ReW<AB>。这里,i大于等于0且小于等于m-1,第一刷新指令SB CMD<i>为多个第一刷新指令中的任一个,第一刷新窗口子信号ReW<i>对应于第一刷新指令SB CMD<i>。In some embodiments of the present disclosure, as shown in FIG. 15 , the refresh window sub-signal includes: a first refresh window sub-signal ReW<i> or a second refresh window sub-signal ReW<AB>. Each refresh window sub-signal generating circuit 206 includes: a first NOR gate E1 and a second latch L2. When the refresh control circuit performs the first refresh operation, the first input terminal of the first NOR gate E1 receives the corresponding first refresh instruction SBCMD<i>, or when the refresh control circuit performs the second refresh operation, the first OR The second input terminal of the NOT gate E1 receives the second refresh command ABCMD. The set terminal of the second latch L2 is connected to the output terminal of the first NOR gate E1, and the reset terminal of the second latch L2 receives the refresh window reset signal Refresh Window Reset; when the refresh control circuit performs the first refresh operation, The second latch L2 outputs the corresponding first refresh window sub-signal ReW<i>, or when the refresh control circuit performs the second refresh operation, the second latch L2 outputs the corresponding second refresh window sub-signal ReW< AB>. Here, i is greater than or equal to 0 and less than or equal to m-1, the first refresh command SB CMD<i> is any one of multiple first refresh commands, and the first refresh window sub-signal ReW<i> corresponds to the first refresh command SB CMD<i>.
本公开实施例中,图16为m=4时的信号时序图,结合图15和图16,当刷新控制电路进行第一刷新操作时,第一刷新指令SB CMD<0>中的有效脉冲触发第一刷新窗口子信号ReW<0>由低电平跳转为高电平,刷新窗口复位信号Refresh Window Reset中的第一个有效脉冲触发第一刷新窗口子信号ReW<0>由高电平跳转为低电平,从而得到第一刷新窗口子信号ReW<0>的有效脉冲。类似的,第一刷新指令SB CMD<0>、SB CMD<1>和SB CMD<2>中的有效脉冲分别触发第一刷新窗口子信号ReW<0>、ReW<1>和ReW<2>由低电平跳转为高电平,刷新窗口复位信号Refresh Window Reset中的第二至四个有效脉冲分别触发第一刷新窗口子信号ReW<0>、ReW<1>和ReW<2>由高电平跳转为低电平,从而得到第一刷新窗口子信号ReW<0>、ReW<1>和ReW<2>的有效脉冲。In the embodiment of the present disclosure, Figure 16 is a signal timing diagram when m=4. Combining Figures 15 and 16, when the refresh control circuit performs the first refresh operation, the effective pulse in the first refresh command SB CMD<0> triggers The first refresh window sub-signal ReW<0> jumps from low level to high level, and the first valid pulse in the refresh window reset signal Refresh Window Reset triggers the first refresh window sub-signal ReW<0> from high level. Jumps to low level, thereby obtaining the valid pulse of the first refresh window sub-signal ReW<0>. Similarly, the valid pulses in the first refresh instructions SB CMD<0>, SB CMD<1> and SB CMD<2> trigger the first refresh window sub-signals ReW<0>, ReW<1> and ReW<2> respectively. Jumping from low level to high level, the second to four valid pulses in the refresh window reset signal Refresh Window Reset trigger the first refresh window sub-signals ReW<0>, ReW<1> and ReW<2> respectively. The high level jumps to the low level, thereby obtaining effective pulses of the first refresh window sub-signals ReW<0>, ReW<1> and ReW<2>.
本公开实施例中,结合图15和图17,当刷新控制电路进行第二刷新操作时,第二刷新指令AB CMD中的有效脉冲触发第二刷新窗口子信号ReW<AB>由低电平跳转为高电平,刷新窗口复位信号Refresh Window Reset中的有效脉冲触发第二刷新窗口子信号ReW<AB>由高电平跳转为低电平,从而得到第二刷新窗口子信号ReW<AB>的有效脉冲。In the embodiment of the present disclosure, combined with Figure 15 and Figure 17, when the refresh control circuit performs the second refresh operation, the valid pulse in the second refresh command AB CMD triggers the second refresh window sub-signal ReW<AB> to jump from a low level to high level, the valid pulse in the refresh window reset signal Refresh Window Reset triggers the second refresh window sub-signal ReW<AB> to jump from high level to low level, thereby obtaining the second refresh window sub-signal ReW<AB > effective pulse.
在本公开的一些实施例中,结合图15和图18,刷新窗口子信号处理电路207包括:第二或门B2。当刷新控制电路进行第一刷新操作时,第二或门B2的输入端从多个刷新窗口子信号生成电路206分别接收多个第一刷新窗口子信号ReW<i>,或者,当刷新控制电路进行第二刷新操作时,第二或门的输入端从多个刷新窗口子信号生成电路206分别接收相同的多个第二刷新窗口子信号ReW<AB>。第二或门B2输出刷新窗口信号Refresh Window。In some embodiments of the present disclosure, in conjunction with FIG. 15 and FIG. 18 , the refresh window sub-signal processing circuit 207 includes: a second OR gate B2. When the refresh control circuit performs the first refresh operation, the input end of the second OR gate B2 receives a plurality of first refresh window sub-signals ReW<i> from the plurality of refresh window sub-signal generating circuits 206 respectively, or when the refresh control circuit When performing the second refresh operation, the input terminal of the second OR gate receives the same plurality of second refresh window sub-signals ReW<AB> from the plurality of refresh window sub-signal generating circuits 206 respectively. The second OR gate B2 outputs the refresh window signal Refresh Window.
本公开实施例中,参考图18,刷新窗口信号生成电路201还包括第十二反相器D12。刷新窗口复位信号Refresh Window Reset通过第十二反相器D12后传输到多个刷新窗口子信号生成电路206。In the embodiment of the present disclosure, referring to FIG. 18 , the refresh window signal generation circuit 201 further includes a twelfth inverter D12. The refresh window reset signal Refresh Window Reset is transmitted to multiple refresh window sub-signal generating circuits 206 through the twelfth inverter D12.
本公开实施例中,参考图16和图18,当刷新控制电路进行第一刷新操作时,由于第一刷新窗口子信号ReW<0>~ReW<3>均为高电平有效,因此,第二或门B2输出的刷新窗口信号Refresh Window会包括第一刷新窗口子信号ReW<0>~ReW<3>中所有的有效脉冲。In the embodiment of the present disclosure, with reference to Figures 16 and 18, when the refresh control circuit performs the first refresh operation, since the first refresh window sub-signals ReW<0>~ReW<3> are all active at high level, the The refresh window signal Refresh Window output by the second OR gate B2 will include all valid pulses in the first refresh window sub-signal ReW<0>~ReW<3>.
本公开实施例中,参考图17和图18,当刷新控制电路进行第二刷新操作时,第二或门B2接收了相同的多个第二刷新窗口子信号ReW<AB>,第二或门B2输出的刷新窗口信号Refresh Window与第二刷新窗口子信号ReW<AB>波形相同。In the embodiment of the present disclosure, with reference to Figures 17 and 18, when the refresh control circuit performs the second refresh operation, the second OR gate B2 receives the same plurality of second refresh window sub-signals ReW<AB>, and the second OR gate B2 The refresh window signal Refresh Window output by B2 has the same waveform as the second refresh window sub-signal ReW<AB>.
在本公开的一些实施例中,如图19所示,第二脉冲生成子电路208包括:第四延时器H4、第五反相器D5、第四与门A4、第六反相器D6、第五与门A5、第二或非门E2和第七反相器D7。第四延时器H4的输入端接收刷新窗口信号Refresh Window。第五反相器D5的输入端连接第四延时器H4的输出端。第四与门A4的第一输入端接收刷新窗口信号Refresh Window,第四与门A4的第二输入端连接第五反相器D5的输出端。第六反相器D6的输入端接收地址标志信号Addr Flag。第五与门A5的第一输入端连接第六反相器D6的输出端,第五与门A5的第二输入端接收地址命令信号Addr CMD。第二或非门E2的输入端分别连接第四与门A4的输出端和第五与门A5的输出端。第七反相器D7的输入端连接第二或非门E2的输出端,第七反相器D7输出第三时钟信号AB CBR CLK。In some embodiments of the present disclosure, as shown in Figure 19, the second pulse generation sub-circuit 208 includes: a fourth delayer H4, a fifth inverter D5, a fourth AND gate A4, and a sixth inverter D6 , the fifth AND gate A5, the second NOR gate E2 and the seventh inverter D7. The input terminal of the fourth delayer H4 receives the refresh window signal Refresh Window. The input terminal of the fifth inverter D5 is connected to the output terminal of the fourth delayer H4. The first input terminal of the fourth AND gate A4 receives the refresh window signal Refresh Window, and the second input terminal of the fourth AND gate A4 is connected to the output terminal of the fifth inverter D5. The input terminal of the sixth inverter D6 receives the address flag signal Addr Flag. The first input terminal of the fifth AND gate A5 is connected to the output terminal of the sixth inverter D6, and the second input terminal of the fifth AND gate A5 receives the address command signal Addr CMD. The input terminal of the second NOR gate E2 is respectively connected to the output terminal of the fourth AND gate A4 and the output terminal of the fifth AND gate A5. The input terminal of the seventh inverter D7 is connected to the output terminal of the second NOR gate E2, and the seventh inverter D7 outputs the third clock signal AB CBR CLK.
本公开实施例中,参考图19和图20,第四延时器H4可以将接收到的刷新窗口信号Refresh Window延时1~3ns。进而,刷新窗口信号Refresh Window经过第四延时器H4、第五反相器D5和第四与门A4后,可以被转换为内部激活命令信号Inner ACT CMD。其中,内部激活命令信号Inner ACT CMD中的脉冲对应于刷新窗口信号Refresh Window的上升沿,该脉冲经过第二或非门E2和第七反相器D7后,构成了第三时钟信号AB CBR CLK的第一脉冲。第三时钟信号AB CBR CLK的第二脉冲则基于地址标志信号Addr Flag和地址命令信号Addr CMD而形成。In the embodiment of the present disclosure, referring to Figures 19 and 20, the fourth delayer H4 can delay the received refresh window signal Refresh Window by 1 to 3 ns. Furthermore, after the refresh window signal Refresh Window passes through the fourth delayer H4, the fifth inverter D5 and the fourth AND gate A4, it can be converted into the internal activation command signal Inner ACT CMD. Among them, the pulse in the internal activation command signal Inner ACT CMD corresponds to the rising edge of the refresh window signal Refresh Window. After passing through the second NOR gate E2 and the seventh inverter D7, the pulse forms the third clock signal AB CBR CLK the first pulse. The second pulse of the third clock signal AB CBR CLK is formed based on the address flag signal Addr Flag and the address command signal Addr CMD.
在本公开的一些实施例中,如图21所示,地址命令信号生成电路210包括:第八反相器D8、第五延时器H5和第六与门A6。第八反相器D8的输入端接收内部刷新窗口信号Inner ACT Window。第五延时器H5的输入端连接第八反相器D8的输入端,接收内部刷新窗口信号Inner ACT Window。第六与门A6的输入端分别连接第八反相器D8的输出端和第五延时器H5的输出端,第六与门A6输出地址命令信号Addr CMD。In some embodiments of the present disclosure, as shown in FIG. 21 , the address command signal generation circuit 210 includes: an eighth inverter D8, a fifth delayer H5, and a sixth AND gate A6. The input terminal of the eighth inverter D8 receives the internal refresh window signal Inner ACT Window. The input terminal of the fifth delayer H5 is connected to the input terminal of the eighth inverter D8 and receives the internal refresh window signal Inner ACT Window. The input terminals of the sixth AND gate A6 are respectively connected to the output terminal of the eighth inverter D8 and the output terminal of the fifth delay device H5. The sixth AND gate A6 outputs the address command signal Addr CMD.
本公开实施例中,第五延时器H5可以将接收到的内部刷新窗口信号Inner ACT Window延时0~2ns。结合图21和图22,经过第八反相器D8、第五延时器H5和第六与门A6,内部刷新窗口信号Inner ACT Window的第一脉冲可以被转换为地址命令信号Addr CMD的第一脉冲,内部刷新窗口信号Inner ACT Window的第二脉冲可以被转换为地址命令信号Addr CMD的第二脉冲。In this disclosed embodiment, the fifth delayer H5 can delay the received internal refresh window signal Inner ACT Window by 0 to 2 ns. Combining Figure 21 and Figure 22, through the eighth inverter D8, the fifth delay H5 and the sixth AND gate A6, the first pulse of the internal refresh window signal Inner ACT Window can be converted into the third pulse of the address command signal Addr CMD. One pulse, the second pulse of the internal refresh window signal Inner ACT Window can be converted into the second pulse of the address command signal Addr CMD.
在本公开的一些实施例中,如图21所示,内部刷新窗口信号生成电路209包括:第三锁存器L3。第三锁存器L3的置位端接收第三时钟信号AB CBR CLK,第三锁存器L3的复位端连接第八反相器D8的输出端,第三锁存器L3输出内部刷新窗口信号Inner ACT Window。In some embodiments of the present disclosure, as shown in FIG. 21 , the internal refresh window signal generation circuit 209 includes: a third latch L3. The set terminal of the third latch L3 receives the third clock signal AB CBR CLK, the reset terminal of the third latch L3 is connected to the output terminal of the eighth inverter D8, and the third latch L3 outputs the internal refresh window signal. Inner ACT Window.
在本公开的一些实施例中,如图23所示,刷新窗口复位信号生成电路211包括:第六延时器H6、第七与门A7和第七延时器H7。第六延时器H6的输入端接收地址标志信号Addr Flag。第七与门A7的第一输入端连接第六延时器H6的输出端,第七与门A7的第二输入端接收内部刷新窗口信号Inner ACT Window。第七延时器H7的输入端连接第七与门A7的输出端,第七延时器H7输出刷新窗口复位信号Refresh Window Reset。In some embodiments of the present disclosure, as shown in Figure 23, the refresh window reset signal generation circuit 211 includes: a sixth delayer H6, a seventh AND gate A7, and a seventh delayer H7. The input terminal of the sixth delayer H6 receives the address flag signal Addr Flag. The first input terminal of the seventh AND gate A7 is connected to the output terminal of the sixth delayer H6, and the second input terminal of the seventh AND gate A7 receives the internal refresh window signal Inner ACT Window. The input terminal of the seventh delayer H7 is connected to the output terminal of the seventh AND gate A7, and the seventh delayer H7 outputs the refresh window reset signal Refresh Window Reset.
本公开实施例中,第六延时器H6可以将接收到的地址标志信号Addr Flag延时0~2ns,第七延时器H7可以将接收到的信号延时4~6ns。结合图23和图24,经过第六延时器H6、第七与门A7和第七延时器H7,可以由内部刷新窗口信号Inner ACT Window和地址标志信号Addr Flag得到刷新窗口复位信号Refresh Window Reset。In the embodiment of the present disclosure, the sixth delayer H6 can delay the received address flag signal Addr Flag by 0 to 2 ns, and the seventh delayer H7 can delay the received signal by 4 to 6 ns. Combining Figure 23 and Figure 24, through the sixth delayer H6, the seventh AND gate A7 and the seventh delayer H7, the refresh window reset signal Refresh Window can be obtained from the internal refresh window signal Inner ACT Window and the address flag signal Addr Flag. Reset.
在本公开的一些实施例中,如图25所示,信号选择电路212包括:第三或非门E3、第三或门B3和第八与门A8。第三或非门E3的输入端分别接收多个计数信号Bank Counter。第三或门B3的第一输入端接收第一时钟信号或第二时钟信号,即第三或门B3的第一输入端接收SameBank刷新时钟信号SB CBR CLK,第三或门B3的第二输入端接收第三时钟信号AB CBR CLK。第八与门A8的第一输入端连接第三或非门E3的输出端,第八与门A8的第二输入端连接第三或门B3的输出端,第八与门A8输出第一时钟信号、第二时钟信号或第三时钟信号AB CBR CLK。In some embodiments of the present disclosure, as shown in FIG. 25 , the signal selection circuit 212 includes: a third NOR gate E3, a third OR gate B3, and an eighth AND gate A8. The input terminals of the third NOR gate E3 respectively receive multiple counting signals Bank Counter. The first input terminal of the third OR gate B3 receives the first clock signal or the second clock signal, that is, the first input terminal of the third OR gate B3 receives the SameBank refresh clock signal SB CBR CLK, and the second input terminal of the third OR gate B3 The terminal receives the third clock signal AB CBR CLK. The first input terminal of the eighth AND gate A8 is connected to the output terminal of the third NOR gate E3, the second input terminal of the eighth AND gate A8 is connected to the output terminal of the third OR gate B3, and the eighth AND gate A8 outputs the first clock. signal, the second clock signal or the third clock signal AB CBR CLK.
本公开实施例中,结合图4和图25,在进行第一刷新操作的情况下,信号选择电路212所接收的各个信号的波形均如图4所示,这样,第三或门B3所输出的信号可以包括SameBank刷新时钟信号SB CBR CLK和第三时钟信号AB CBR CLK中所有的有效脉冲,然而,第三或非门E3输出的信号可以屏蔽掉第三时钟信号AB CBR CLK中的有效脉冲,从而,第八与门A8所输出的信号与SameBank刷新时钟信号SB CBR CLK波形相同,也就是说,在进行第一刷新操作的情况下,第八与门A8输出第一时钟信号或第二时钟信号。In the embodiment of the present disclosure, with reference to Figure 4 and Figure 25, when the first refresh operation is performed, the waveforms of each signal received by the signal selection circuit 212 are as shown in Figure 4. In this way, the third OR gate B3 outputs The signal can include all valid pulses in the SameBank refresh clock signal SB CBR CLK and the third clock signal AB CBR CLK. However, the signal output by the third NOR gate E3 can shield the valid pulses in the third clock signal AB CBR CLK. , thus, the signal output by the eighth AND gate A8 has the same waveform as the SameBank refresh clock signal SB CBR CLK. That is to say, when the first refresh operation is performed, the eighth AND gate A8 outputs the first clock signal or the second clock signal.
在进行第二刷新操作的情况下,多个计数信号Bank Counter<0>~Bank Counter<3>以及SameBank刷新时钟信号SB CBR CLK均保持低电平(图4中未示出),而第三时钟信号AB CBR CLK的波形仍如图4所示,这样,第八与门A8所输出的信号与第三时钟信号AB CBR CLK波形相同,也就是说,在进行第一刷新操作的情况下,第八与门A8输出第三时钟信号AB CBR CLK。In the case of the second refresh operation, the multiple count signals Bank Counter<0>~Bank Counter<3> and the SameBank refresh clock signal SB CBR CLK all remain low (not shown in Figure 4), and the third The waveform of the clock signal AB CBR CLK is still as shown in Figure 4. In this way, the signal output by the eighth AND gate A8 is the same as the waveform of the third clock signal AB CBR CLK. That is to say, when the first refresh operation is performed, The eighth AND gate A8 outputs the third clock signal AB CBR CLK.
在本公开的一些实施例中,如图26所示,地址标志信号生成电路213包括:第九反相器D9和第四锁存器L4。第九反相器D9的输入端接收地址命令信号Addr CMD。第四锁存器L4的置位端连接第九反相器D9的输出端,第四锁存器L4的复位端接收刷新窗口信号Refresh Window,第四锁存器L4输出地址标志信号Addr Flag。In some embodiments of the present disclosure, as shown in FIG. 26 , the address flag signal generation circuit 213 includes: a ninth inverter D9 and a fourth latch L4. The input terminal of the ninth inverter D9 receives the address command signal Addr CMD. The set terminal of the fourth latch L4 is connected to the output terminal of the ninth inverter D9, the reset terminal of the fourth latch L4 receives the refresh window signal Refresh Window, and the fourth latch L4 outputs the address flag signal Addr Flag.
本公开实施例中,结合图26和图27,地址命令信号Addr CMD的第一脉冲触发地址标志信号Addr Flag由低电平跳转为高电平,刷新窗口信号Refresh Window的下降沿触发地址标志信号Addr Flag由高电平跳转为低电平,从而得到图27示出的地址标志信号Addr Flag的波形。In this disclosed embodiment, combined with Figure 26 and Figure 27, the first pulse of the address command signal Addr CMD triggers the address flag signal Addr Flag to jump from low level to high level, and the falling edge of the refresh window signal Refresh Window triggers the address flag. The signal Addr Flag jumps from high level to low level, thereby obtaining the waveform of the address flag signal Addr Flag shown in Figure 27.
图28示出了刷新控制电路101的一种可选的实现方式,图28中包括了图10、图12、图13、图15、图18、图19、图21、图23、图25和图26中示出的电路元件。图29和图30示出了图28中部分信号的一种可选的波形图,其中,图29为刷新控制电路101进行第一刷新操作的情况下对应的信号示意图,图30为刷新控制电路101进行第二刷新操作的情况下对应的信号示意图。Figure 28 shows an optional implementation of the refresh control circuit 101. Figure 28 includes Figures 10, 12, 13, 15, 18, 19, 21, 23, 25 and Circuit elements shown in Figure 26. Figures 29 and 30 show an optional waveform diagram of some of the signals in Figure 28. Figure 29 is a schematic diagram of the corresponding signals when the refresh control circuit 101 performs the first refresh operation. Figure 30 is a schematic diagram of the refresh control circuit. 101 corresponds to the signal diagram when performing the second refresh operation.
图28以Bank Group中Bank的数量m=4为例,从而,图28中包括了4个第一锁存器L1、4个第一反相器D1、以及4个刷新窗口子信号生成电路206。Figure 28 takes the number of Banks in Bank Group m = 4 as an example. Therefore, Figure 28 includes 4 first latches L1, 4 first inverters D1, and 4 refresh window sub-signal generation circuits 206 .
结合图28和图29,在刷新控制电路101进行第一刷新操作的情况下,4个第一刷新指令SB CMD<0>、SB CMD<1>、SB CMD<2>和SB CMD<3>中包括了有效脉冲,而第二刷新指令AB CMD(图29中未示出)中则不包括有效脉冲,即第二刷新指令AB CMD保持低电平。从而,4个第一锁存器L1的置位端通过4个第一反相器D1分别接收4个第一刷新指令SB CMD<0>、SB CMD<1>、SB CMD<2>和SB CMD<3>,4个第一锁存器L1分别输出4个计数信号Bank Counter<0>、Bank Counter<1>、Bank Counter<2>和Bank Counter<3>到第三或非门E3的输入端以及第一与门A1的输入端。进而,信号选择电路212通过第八与门A8输出SameBank刷新时钟信号SB CBR CLK(即第一时钟信号或第二时钟信号)。同时,4个第二锁存器L2的置位端通过4个第一或非门E1分别接收4个第一刷新指令SB CMD<0>、SB CMD<1>、SB CMD<2>和SB CMD<3>,4个第二锁存器L2分别输出4个第一刷新窗口子信号ReW<0>、ReW<1>、ReW<2>和ReW<3>。Combined with Figure 28 and Figure 29, when the refresh control circuit 101 performs the first refresh operation, the four first refresh instructions SB CMD<0>, SB CMD<1>, SB CMD<2> and SB CMD<3> includes valid pulses, while the second refresh command AB CMD (not shown in Figure 29) does not include valid pulses, that is, the second refresh command AB CMD remains low. Therefore, the set ends of the four first latches L1 respectively receive the four first refresh instructions SB CMD<0>, SB CMD<1>, SB CMD<2> and SB through the four first inverters D1. CMD<3>, the four first latches L1 respectively output four counting signals Bank Counter<0>, Bank Counter<1>, Bank Counter<2> and Bank Counter<3> to the third NOR gate E3 input terminal and the input terminal of the first AND gate A1. Furthermore, the signal selection circuit 212 outputs the SameBank refresh clock signal SB CBR CLK (ie, the first clock signal or the second clock signal) through the eighth AND gate A8. At the same time, the set ends of the four second latches L2 receive the four first refresh instructions SB CMD<0>, SB CMD<1>, SB CMD<2> and SB respectively through the four first NOR gates E1. CMD<3>, the four second latches L2 respectively output four first refresh window sub-signals ReW<0>, ReW<1>, ReW<2> and ReW<3>.
结合图9、图28和图29可知,在刷新控制电路101进行第一刷新操作的情况下,信号选择电路212输出SameBank刷新时钟信号SB CBR CLK(即第一时钟信号或第二时钟信号)到地址处理电路302,4个刷新窗口子信号生成电路206输出4个第一刷新窗口子信号ReW<0>、ReW<1>、ReW<2>和ReW<3>到地址处理电路302,地址标志信号生成电路213输出地址标志信号Addr Flag到地址处理电路302。Combining Figure 9, Figure 28 and Figure 29, it can be seen that when the refresh control circuit 101 performs the first refresh operation, the signal selection circuit 212 outputs the SameBank refresh clock signal SB CBR CLK (ie, the first clock signal or the second clock signal) to Address processing circuit 302, four refresh window sub-signal generation circuits 206 output four first refresh window sub-signals ReW<0>, ReW<1>, ReW<2> and ReW<3> to the address processing circuit 302, address flag The signal generation circuit 213 outputs the address flag signal Addr Flag to the address processing circuit 302.
结合图28和图30,在刷新控制电路101进行第二刷新操作的情况下,4个第一刷新指令SB CMD<0>、SB CMD<1>、SB CMD<2>和SB CMD<3>(图30中未示出)中均不包括有效脉冲,即4个第一刷新指令SB CMD<0>、SB CMD<1>、SB CMD<2>和SB CMD<3>均保持低电平,而第二刷新指令AB CMD中则包括了有效脉冲。从而,4个第一锁存器L1输出的4个计数信号Bank Counter<0>、Bank Counter<1>、Bank Counter<2>和Bank Counter<3>均保持低电平(图30中未示出)。进而,信号选择电路212通过第八与门A8输出第三时钟信号AB CBR CLK。同时,4个第二锁存器L2的置位端通过4个第一或非门E1均接收第二刷新指令AB CMD,4个第二锁存器L2均输出4个相同的第二刷新窗口子信号ReW<AB>。Combining Figure 28 and Figure 30, when the refresh control circuit 101 performs the second refresh operation, the four first refresh instructions SB CMD<0>, SB CMD<1>, SB CMD<2> and SB CMD<3> (not shown in Figure 30) does not include valid pulses, that is, the four first refresh instructions SB CMD<0>, SB CMD<1>, SB CMD<2> and SB CMD<3> all remain low , and the second refresh command AB CMD includes valid pulses. As a result, the four count signals Bank Counter<0>, Bank Counter<1>, Bank Counter<2> and Bank Counter<3> output by the four first latches L1 all remain low (not shown in Figure 30 out). Furthermore, the signal selection circuit 212 outputs the third clock signal AB CBR CLK through the eighth AND gate A8. At the same time, the set ends of the four second latches L2 receive the second refresh command AB CMD through the four first NOR gates E1, and the four second latches L2 all output four identical second refresh windows. Sub-signal ReW<AB>.
结合图9、图28和图30可知,在刷新控制电路101进行第二刷新操作的情况下,信号选择电路212输出第三时钟信号AB CBR CLK到地址处理电路302,4个刷新窗口子信号生成电路206输出4个相同的第二刷新窗口子信号ReW<AB>到地址处理电路302,地址标志信号生成电路213输出地址标志信号Addr Flag到地址处理电路302。Combining Figure 9, Figure 28 and Figure 30, it can be seen that when the refresh control circuit 101 performs the second refresh operation, the signal selection circuit 212 outputs the third clock signal AB CBR CLK to the address processing circuit 302, and four refresh window sub-signals are generated. The circuit 206 outputs four identical second refresh window sub-signals ReW<AB> to the address processing circuit 302, and the address flag signal generation circuit 213 outputs the address flag signal Addr Flag to the address processing circuit 302.
在本公开的一些实施例中,如图31所示,重复指令确定电路401包括:多个第八延时器H8、多个第九与门A9和第四或非门E4。多个第八延时器H8的输入端依次接收多个计数信号Bank Counter<0>~Bank Counter<m-1>。多个第九与门A9的第一输入端依次连接多个第八延时器H8的输出端,多个第九与门A9的第二输入端依次接收多个第一刷新指令SB CMD<0>~SB CMD<m-1>。第四或非门E4的输入端分别连接多个第九与门A9的输出端,第四或非门E4输出重复指令。In some embodiments of the present disclosure, as shown in FIG. 31 , the repeated instruction determination circuit 401 includes: a plurality of eighth delays H8, a plurality of ninth AND gates A9, and a fourth NOR gate E4. The input terminals of multiple eighth delays H8 receive multiple counting signals Bank Counter<0>~Bank Counter<m-1> in sequence. The first input terminals of the plurality of ninth AND gates A9 are connected to the output terminals of the plurality of eighth delays H8 in sequence, and the second input terminals of the plurality of ninth AND gates A9 receive a plurality of first refresh instructions SB CMD<0 in sequence. >~SB CMD<m-1>. The input terminals of the fourth NOR gate E4 are respectively connected to the output terminals of a plurality of ninth AND gates A9, and the fourth NOR gate E4 outputs repeated instructions.
额外刷新标志信号生成电路402包括:第五锁存器L5。第五锁存器L5的置位端接收重复指令Extra CMD,第五锁存器L5的复位端接收刷新窗口信号Refresh Window,第五锁存器L5输出额外刷新标志信号Extra Refresh Flag。The additional refresh flag signal generating circuit 402 includes: a fifth latch L5. The set end of the fifth latch L5 receives the repeated command Extra CMD, the reset end of the fifth latch L5 receives the refresh window signal Refresh Window, and the fifth latch L5 outputs the extra refresh flag signal Extra Refresh Flag.
本公开实施例中,结合图31和图7,以m=4为例,第一刷新指令SB CMD<0>中存在重复指令,该重复指令产生时,计数信号Bank Counter<0>为高电平;重复指令和置为高电平的计数信号Bank Counter<0>通过第九与门A9和第四或非门E4后,第四或非门E4输出重复指令Extra CMD到第五锁存器L5的置位端,触发额外刷新标志信号Extra Refresh Flag由低电平跳转为高电平。另外,刷新窗口信号Refresh Window的下降沿则触发额外刷新标志信号Extra Refresh Flag由高电平跳转为低电平。这样,即生成了一段高电平有效的额外刷新标志信号Extra Refresh Flag。In the embodiment of the present disclosure, combined with Figure 31 and Figure 7, taking m=4 as an example, there is a repeated instruction in the first refresh instruction SB CMD<0>. When the repeated instruction is generated, the counting signal Bank Counter<0> is high. flat; after the repeated instruction and the high-level counting signal Bank Counter<0> pass through the ninth AND gate A9 and the fourth NOR gate E4, the fourth NOR gate E4 outputs the repeated instruction Extra CMD to the fifth latch. The set end of L5 triggers the extra refresh flag signal Extra Refresh Flag to jump from low level to high level. In addition, the falling edge of the refresh window signal Refresh Window triggers the extra refresh flag signal Extra Refresh Flag to jump from high level to low level. In this way, a high-level active extra refresh flag signal Extra Refresh Flag is generated.
另一方面,对于第一刷新指令SB CMD<0>、SB CMD<1>、SB CMD<2>和SB CMD<3>中除重复指令外的脉冲(即常规指令),其对应的经过第一延时器H1的计数信号Bank Counter<0>、Bank Counter<1>、Bank Counter<2>和Bank Counter<3>的时序为低电平。常规指令和置为低电平的计数信号Bank Counter通过第九与门A9和第四或非门E4后,第四或非门E4输出的信号保持低电平,即不会生成重复刷新指 令Extra CMD,这样,也就不会触发第五锁存器L5将额外刷新标志信号Extra Refresh Flag由低电平跳转为高电平。On the other hand, for the pulses other than repeated instructions (i.e. regular instructions) in the first refresh instructions SB CMD<0>, SB CMD<1>, SB CMD<2> and SB CMD<3>, their corresponding pulses go through the The timing of the counting signals Bank Counter<0>, Bank Counter<1>, Bank Counter<2> and Bank Counter<3> of the delayer H1 is low level. After the regular instructions and the low-level counting signal Bank Counter pass through the ninth AND gate A9 and the fourth NOR gate E4, the signal output by the fourth NOR gate E4 remains low, that is, no repeated refresh instruction Extra will be generated. CMD, in this way, will not trigger the fifth latch L5 to jump the extra refresh flag signal Extra Refresh Flag from low level to high level.
可以理解的是,本公开实施例中的重复命令处理电路102,利用重复指令和对应的计数信号的电平,触发生成额外刷新标志信号,进而触发地址产生器103生成额外地址。这样,利用第一刷新指令中多余的重复指令,对有刷新需要的额外地址进行刷新,避免了指令的浪费,提高了刷新效率。It can be understood that the repeated command processing circuit 102 in the embodiment of the present disclosure uses the repeated command and the corresponding level of the count signal to trigger the generation of an additional refresh flag signal, thereby triggering the address generator 103 to generate an additional address. In this way, the extra repeated instructions in the first refresh instruction are used to refresh the additional addresses that need to be refreshed, thus avoiding the waste of instructions and improving the refresh efficiency.
在本公开的一些实施例中,如图32所示,控制信号生成电路303包括:第十与门A10、第十反相器A10和第五或非门E5。第十与门A10的输入端分别对应接收多个刷新窗口子信号ReW。第十反相器D10的输入端接收地址标志信号Addr Flag。第五或非门E5的第一输入端连接第十与门A10的输出端,第五或非门E5的第二输入端连接第十反相器D10的输出端,第五或非门E5输出地址控制信号Addr Ctrl。In some embodiments of the present disclosure, as shown in FIG. 32, the control signal generation circuit 303 includes: a tenth AND gate A10, a tenth inverter A10, and a fifth NOR gate E5. The input terminals of the tenth AND gate A10 respectively receive multiple refresh window sub-signals ReW. The input terminal of the tenth inverter D10 receives the address flag signal Addr Flag. The first input terminal of the fifth NOR gate E5 is connected to the output terminal of the tenth AND gate A10, the second input terminal of the fifth NOR gate E5 is connected to the output terminal of the tenth inverter D10, and the output terminal of the fifth NOR gate E5 is Address control signal Addr Ctrl.
本公开实施例中,图33以m=4为例,结合图32和图33,在刷新控制电路进行第一刷新操作的情况下,第十与门A10的各输入端分别接收多个第一刷新窗口子信号ReW<0>、ReW<1>、ReW<2>和ReW<3>,则第十与门A10输出的信号ReW<And>恒为低电平,这样,地址控制信号Addr Ctrl与地址标志信号Addr Flag波形相同,也就是说,地址标志信号Addr Flag经过控制信号生成电路303后仍保持波形不变。In the embodiment of the present disclosure, FIG. 33 takes m=4 as an example. In combination with FIG. 32 and FIG. 33 , when the refresh control circuit performs the first refresh operation, each input end of the tenth AND gate A10 receives a plurality of first refresh operations respectively. Refresh the window sub-signals ReW<0>, ReW<1>, ReW<2> and ReW<3>, then the signal ReW<And> output by the tenth AND gate A10 is always low level. In this way, the address control signal Addr Ctrl The waveform is the same as the address flag signal Addr Flag, that is to say, the address flag signal Addr Flag still maintains the same waveform after passing through the control signal generation circuit 303.
结合图32和图34,在刷新控制电路进行第二刷新操作的情况下,第十与门A10的各输入端均接收相同的第二刷新窗口子信号ReW<AB>,则第十与门A10输出的信号ReW<And>与第二刷新窗口子信号ReW<AB>波形相同,而信号ReW<And>的高电平区域覆盖了地址标志信号Addr Flag的高电平区域,这样,通过第五或非门E5,信号ReW<And>可以屏蔽地址标志信号Addr Flag的高电平区域,从而,地址控制信号Addr Ctrl恒为低电平,也就是说,地址标志信号Addr Flag经过控制信号生成电路303后被屏蔽。Combining Figure 32 and Figure 34, when the refresh control circuit performs the second refresh operation, each input terminal of the tenth AND gate A10 receives the same second refresh window sub-signal ReW<AB>, then the tenth AND gate A10 The output signal ReW<And> has the same waveform as the second refresh window sub-signal ReW<AB>, and the high-level area of the signal ReW<And> covers the high-level area of the address flag signal Addr Flag. In this way, through the fifth NOR gate E5, the signal ReW<And> can shield the high level area of the address flag signal Addr Flag, so that the address control signal Addr Ctrl is always low level, that is to say, the address flag signal Addr Flag passes through the control signal generation circuit Blocked after 303.
需要说明的是,图33示出的多个第一刷新窗口子信号ReW<0>、ReW<1>、ReW<2>和ReW<3>与图16示出的多个第一刷新窗口子信号ReW<0>、ReW<1>、ReW<2>和ReW<3>波形相同,也就是说,图33中的多个第一刷新窗口子信号ReW<0>、ReW<1>、ReW<2>和ReW<3>可以按照图16的示例来得到。图34示出的第二刷新窗口子信号ReW<AB>与图17示出的第二刷新窗口子信号ReW<AB>波形相同,也就是说,图34中的第二刷新窗口子信号ReW<AB>可以按照图17的示例来得到。It should be noted that the multiple first refresh window sub-signals ReW<0>, ReW<1>, ReW<2> and ReW<3> shown in Figure 33 are different from the multiple first refresh window sub-signals shown in Figure 16 The waveforms of the signals ReW<0>, ReW<1>, ReW<2> and ReW<3> are the same, that is to say, the multiple first refresh window sub-signals ReW<0>, ReW<1>, ReW in Figure 33 <2> and ReW<3> can be obtained according to the example of Figure 16. The second refresh window sub-signal ReW<AB> shown in FIG. 34 has the same waveform as the second refresh window sub-signal ReW<AB> shown in FIG. 17 , that is to say, the second refresh window sub-signal ReW< in FIG. 34 AB> can be obtained according to the example in Figure 17.
在本公开的一些实施例中,如图35所示,地址选择电路304包括:加法器306和第一数据选择器MUX1。In some embodiments of the present disclosure, as shown in Figure 35, the address selection circuit 304 includes an adder 306 and a first data selector MUX1.
加法器306的输入端连接地址计数器301。加法器306用于在刷新控制电路接收第一刷新指令时,从地址计数器301获取第一地址,在第一地址基础上进行累加,得到第二地址。The input terminal of the adder 306 is connected to the address counter 301 . The adder 306 is used to obtain the first address from the address counter 301 when the refresh control circuit receives the first refresh instruction, and performs accumulation on the basis of the first address to obtain the second address.
第一数据选择器MUX1的第一输入端连接地址计数器301,第一数据选择器MUX1的第二输入端连接加法器306,第一数据选择器MUX1的控制端接收地址控制信号Addr Ctrl,第一数据选择器MUX1的输出端作为地址选择电路304的输出端。第一数据选择器MUX1用于在刷新控制电路接收第一刷新指令时,从地址计数器301获取第一地址,并从加法器306获取第二地址,响应于地址控制信号Addr Ctrl,选择第一地址或第二地址进行输出。The first input terminal of the first data selector MUX1 is connected to the address counter 301, the second input terminal of the first data selector MUX1 is connected to the adder 306, and the control terminal of the first data selector MUX1 receives the address control signal Addr Ctrl. The output terminal of the data selector MUX1 serves as the output terminal of the address selection circuit 304. The first data selector MUX1 is used to obtain the first address from the address counter 301 and the second address from the adder 306 when the refresh control circuit receives the first refresh instruction, and select the first address in response to the address control signal Addr Ctrl. or the second address for output.
本公开实施例中,参考图35和图36,在刷新控制电路接收第一刷新指令的情况下,地址计数器301接收到SameBank刷新时钟信号SB CBR CLK,即接收到第一时钟信号或第二时钟信号。In the embodiment of the present disclosure, with reference to Figures 35 and 36, when the refresh control circuit receives the first refresh instruction, the address counter 301 receives the SameBank refresh clock signal SB CBR CLK, that is, receives the first clock signal or the second clock Signal.
当地址计数器301接收到第一时钟信号时,由于第一时钟信号不包括有效脉冲,因此,不会触发地址计数器301改变第一地址。地址输出信号Addr Counter Output表征了地址计数器301所存储的第一地址,参考图36,当地址计数器301接收到第一时钟信号时,第一地址维持n不变。第一地址n直接被传输到第一数据选择器MUX1的第一输入端(即标“0”的输入端),同时,第一地址n通过加法器306后变为第二地址n+1,第二地址n+1被传输到第一数据选择器MUX1的第二输入端(即标“1”的输入端)。第一数据选择器MUX1输出的地址Add_1,则受控于地址控制信号Addr Ctrl,参考图36,第一数据选择器MUX1根据地址控制信号Addr Ctrl的电平交替输出n和n+1。也就是说,当地址控制信号Addr Ctrl为低电平时,第一数据选择器MUX1将其第一输入端输入的第一地址n输出;当地址控制信号Addr Ctrl为高电平时,第一数据选择器MUX1将其第二输入端输入的第二地址n+1输出。第一数据选择器MUX1输出的每一组n和n+1都会用于Bank Group中对应的SameBank进行第一刷新操作,直至Bank Group中所有Bank完成第一刷新操作,即第一刷新操作的次数达到m(图36中以m=4为例),在这一过程中,地址计数器301所存储的第一地址一直维持n不变,即地址输出信号Addr Counter Output在第一刷新操作的次数达到m之前,一直维持n不变。When the address counter 301 receives the first clock signal, since the first clock signal does not include a valid pulse, the address counter 301 is not triggered to change the first address. The address output signal Addr Counter Output represents the first address stored by the address counter 301. Referring to FIG. 36, when the address counter 301 receives the first clock signal, the first address remains n unchanged. The first address n is directly transmitted to the first input terminal of the first data selector MUX1 (ie, the input terminal marked "0"). At the same time, the first address n becomes the second address n+1 after passing through the adder 306. The second address n+1 is transmitted to the second input terminal of the first data selector MUX1 (ie, the input terminal labeled "1"). The address Add_1 output by the first data selector MUX1 is controlled by the address control signal Addr Ctrl. Referring to Figure 36, the first data selector MUX1 alternately outputs n and n+1 according to the level of the address control signal Addr Ctrl. That is to say, when the address control signal Addr Ctrl is low level, the first data selector MUX1 outputs the first address n input by its first input terminal; when the address control signal Addr Ctrl is high level, the first data selector MUX1 The device MUX1 outputs the second address n+1 input to its second input terminal. Each group of n and n+1 output by the first data selector MUX1 will be used for the corresponding SameBank in the Bank Group to perform the first refresh operation until all Banks in the Bank Group complete the first refresh operation, that is, the number of first refresh operations Reaching m (taking m=4 as an example in Figure 36), during this process, the first address stored in the address counter 301 remains n unchanged, that is, the address output signal Addr Counter Output reaches the Before m, n is kept unchanged.
当第一刷新操作的次数达到m,即所有Bank均完成了本轮第一刷新操作后,地址计数器301接收到第二时钟信号,由于第二时钟信号包括了两个有效脉冲,因此,地址计数器301会在第一地址上累加2,即改变第一地址为第三地址。此时,Bank Group中所有Bank已经完成了上一轮第一刷新操作,在刷新控制电路接收到下一轮第一刷新指令后,可以按照第三地址进行下一轮第一刷新操作。When the number of first refresh operations reaches m, that is, after all banks have completed the first refresh operation of this round, the address counter 301 receives the second clock signal. Since the second clock signal includes two valid pulses, the address counter 301 301 will accumulate 2 on the first address, that is, change the first address to the third address. At this time, all banks in the Bank Group have completed the previous round of first refresh operations. After the refresh control circuit receives the next round of first refresh instructions, it can perform the next round of first refresh operations according to the third address.
例如,当前的第一地址是0000,第一地址上累加1为第二地址0001,如此对各Bank进行第一刷新操作(Same Bank Refresh)。当所有bank完成本轮第一刷新操作后,地址计数器301受第二时钟信号中两个脉冲触发,对第一地址累加2,输出0010,再进行下一轮的第一刷新操作。For example, the current first address is 0000, and 1 is accumulated on the first address to become the second address 0001. In this way, the first refresh operation (Same Bank Refresh) is performed on each bank. After all banks complete the first refresh operation of this round, the address counter 301 is triggered by two pulses in the second clock signal, accumulates 2 to the first address, outputs 0010, and then performs the first refresh operation of the next round.
需要说明的是,图36与图2中示出的第一时钟信号或第二时钟信号波形相同,也就是说,图36示出的第一时钟信号或第二时钟信号可以通过图2的示例来得到。It should be noted that the waveform of the first clock signal or the second clock signal shown in FIG. 36 is the same as that of the first clock signal or the second clock signal shown in FIG. 2. That is to say, the first clock signal or the second clock signal shown in FIG. Come and get.
可以理解的是,在Bank Group中的SameBank进行第一刷新操作时,会对一组SameBank中两个相邻地址(即第一地址和第二地址)进行第一刷新操作,且在这一过程中第一地址维持不变。而当Bank Group中的所有Bank完成了对两个相邻地址的第一刷新操作后,即Bank Group中所有Bank完成了上一轮第一 刷新操作后,第一地址累加2变为第三地址,可以按照第三地址进行下一轮第一刷新操作。这样,可以按照地址的顺序对各Bank中的地址进行第一刷新操作,保证了刷新地址的连续性,避免了遗漏地址而未进行第一刷新操作。It can be understood that when the SameBank in the Bank Group performs the first refresh operation, the first refresh operation will be performed on two adjacent addresses (i.e. the first address and the second address) in a group of SameBanks, and in this process The first address remains unchanged. When all Banks in the Bank Group have completed the first refresh operation on two adjacent addresses, that is, after all Banks in the Bank Group have completed the first refresh operation in the previous round, the first address accumulates 2 and becomes the third address. , the next round of first refresh operation can be performed according to the third address. In this way, the first refresh operation can be performed on the addresses in each bank in the order of the addresses, ensuring the continuity of the refresh addresses and avoiding missing addresses without performing the first refresh operation.
本公开实施例中,参考图35,第一数据选择器MUX1还用于在刷新控制电路接收第二刷新指令时,从地址计数器301获取第四地址或第五地址,响应于地址控制信号Addr Ctrl,将第四地址或第五地址输出。In the embodiment of the present disclosure, referring to Figure 35, the first data selector MUX1 is also used to obtain the fourth address or the fifth address from the address counter 301 when the refresh control circuit receives the second refresh instruction, in response to the address control signal Addr Ctrl , output the fourth address or fifth address.
参考图35和图37,在刷新控制电路接收第二刷新指令的情况下,地址计数器301接收到第三时钟信号AB CBR CLK。第三时钟信号AB CBR CLK中的每个有效脉冲,均会触发地址计数器301在第一地址上累加1。地址输出信号Addr Counter Output表征了地址计数器301所存储的第一地址,参考图37,地址输出信号Addr Counter Output在第三时钟信号AB CBR CLK的触发下累加。其中,图37示出的第三时钟信号AB CBR CLK包含了四个周期,每两个有效脉冲为一个周期,从而,在第一个周期内,第一地址n被触发改变为第四地址n+1和第五地址n+2;在第二个周期内,n+2作为第一地址被触发改变为第四地址n+3和第五地址n+4,依次类推。Referring to Figures 35 and 37, when the refresh control circuit receives the second refresh command, the address counter 301 receives the third clock signal AB CBR CLK. Each valid pulse in the third clock signal AB CBR CLK will trigger the address counter 301 to accumulate 1 on the first address. The address output signal Addr Counter Output represents the first address stored by the address counter 301. Referring to Figure 37, the address output signal Addr Counter Output is accumulated under the trigger of the third clock signal AB CBR CLK. Among them, the third clock signal AB CBR CLK shown in Figure 37 includes four cycles, and every two valid pulses are one cycle. Therefore, in the first cycle, the first address n is triggered to change to the fourth address n. +1 and the fifth address n+2; in the second cycle, n+2 as the first address is triggered to change to the fourth address n+3 and the fifth address n+4, and so on.
同时,地址控制信号Addr Ctrl保持低电平,从而,第一数据选择器MUX1仅仅将其第一输入端接收到第四地址和第五地址进行输出,也就是说,第一数据选择器MUX1输出的地址Add_1与地址输出信号Addr Counter Output保持一致。这样,可以按照地址的顺序对所有Bank中的地址进行第二刷新操作,避免了遗漏地址而未进行第二刷新操作。At the same time, the address control signal Addr Ctrl remains low, so that the first data selector MUX1 only outputs the fourth address and the fifth address received by its first input terminal. That is to say, the first data selector MUX1 outputs The address Add_1 is consistent with the address output signal Addr Counter Output. In this way, the second refresh operation can be performed on the addresses in all banks in the order of the addresses, thereby avoiding missing addresses and not performing the second refresh operation.
需要说明的是,图37与图5示出的第三时钟信号AB CBR CLK波形相同,也就是说,图37示出的第三时钟信号AB CBR CLK可以通过图5的示例来得到。It should be noted that the waveforms of the third clock signal AB CBR CLK shown in Figure 37 and Figure 5 are the same. That is to say, the third clock signal AB CBR CLK shown in Figure 37 can be obtained through the example of Figure 5.
可以理解的是,在Bank Group中的所有Bank进行第二刷新操作时,地址计数器301根据第三时钟信号AB CBR CLK生成连续的地址(包括第四地址和第五地址),并将这些连续的地址通过地址选择电路304输出,以使得所有Bank中的各地址依次完成第二刷新操作(即All Bank Refresh)。这样,可以按照地址的顺序对所有Bank中的地址进行第二刷新操作,保证了刷新地址的连续性,避免了遗漏地址而未进行第二刷新操作。同时,采用一套地址产生器便可以灵活进行两种刷新操作,这样,提高了电路的兼容性。It can be understood that when all Banks in the Bank Group perform the second refresh operation, the address counter 301 generates consecutive addresses (including the fourth address and the fifth address) according to the third clock signal AB CBR CLK, and these consecutive addresses are The address is output through the address selection circuit 304, so that each address in all Banks sequentially completes the second refresh operation (ie, All Bank Refresh). In this way, the second refresh operation can be performed on the addresses in all banks in the order of the addresses, ensuring the continuity of the refresh addresses and avoiding missing addresses without performing the second refresh operation. At the same time, using a set of address generators can flexibly perform two refresh operations, thus improving the compatibility of the circuit.
在本公开的一些实施例中,如图35所示,额外地址生成电路305包括:第十一反相器D11、第二数据选择器MUX2和地址延时模块307。In some embodiments of the present disclosure, as shown in FIG. 35 , the additional address generation circuit 305 includes: an eleventh inverter D11 , a second data selector MUX2 and an address delay module 307 .
第十一反相器D11的输入端连接地址选择电路304的输出端(即连接第一数据选择器MUX1的输出端)。第十一反相器D11用于在刷新控制电路接收第一刷新指令时,从地址选择电路304获取第一地址或第二地址中的目标位,并将第一地址或第二地址中的目标位取反后输出。The input terminal of the eleventh inverter D11 is connected to the output terminal of the address selection circuit 304 (that is, connected to the output terminal of the first data selector MUX1). The eleventh inverter D11 is used to obtain the target bit in the first address or the second address from the address selection circuit 304 when the refresh control circuit receives the first refresh instruction, and convert the target bit in the first address or the second address to Output after bit inversion.
第二数据选择器MUX2的第一输入端连接地址选择电路304的输出端(即连接第一数据选择器MUX1的输出端),第二数据选择器MUX2的第二输入端连接第十一反相器D11的输出端。第二数据选择器MUX2用于在刷新控制电路接收第一刷新指令,且第二数据选择器MUX2的控制端未接收到额外刷新标志信号Extra Refresh Flag时,从地址选择电路304获取第一地址或第二地址中的目标位,并将第一地址或第二地址中的目标位输出。或者,第二数据选择器MUX2用于在刷新控制电路接收第一刷新指令,且第二数据选择器MUX2的控制端接收到额外刷新标志信号Extra Refresh Flag时,从第十一反相器D11获取取反后的第一地址或第二地址中的目标位,并将取反后的第一地址或第二地址中的目标位输出。The first input terminal of the second data selector MUX2 is connected to the output terminal of the address selection circuit 304 (that is, connected to the output terminal of the first data selector MUX1), and the second input terminal of the second data selector MUX2 is connected to the eleventh inverting The output terminal of device D11. The second data selector MUX2 is used to obtain the first address from the address selection circuit 304 or The target bit in the second address and output the target bit in the first address or the second address. Alternatively, the second data selector MUX2 is used to obtain the data from the eleventh inverter D11 when the refresh control circuit receives the first refresh command and the control end of the second data selector MUX2 receives the extra refresh flag signal Extra Refresh Flag. Invert the target bit in the first address or the second address, and output the inverted target bit in the first address or the second address.
地址延时模块307的输入端连接地址选择电路304的输出端。地址延时模块307用于在刷新控制电路接收第一刷新指令时,从地址选择电路304获取第一地址或第二地址中的其他位,将第一地址或第二地址中的其他位延时后输出,其中,其他位为除目标位以外的地址位。The input terminal of the address delay module 307 is connected to the output terminal of the address selection circuit 304 . The address delay module 307 is used to obtain other bits in the first address or the second address from the address selection circuit 304 and delay other bits in the first address or the second address when the refresh control circuit receives the first refresh instruction. Then output, where the other bits are address bits except the target bit.
本公开实施例中,参考图35,额外地址生成电路305从地址选择电路304所接收的地址Add_1,被分为两部分传输,其中,地址Add_1的目标位被传输到第二数据选择器MUX2的第一输入端(即标“0”的输入端),地址Add_1的目标位经过第十一反相器D11取反后被传输到第二数据选择器MUX2的第二输入端(即标“1”的输入端),地址Add_1中除目标位以外的其他位被传输到地址延时模块307。也就是说,第二数据选择器MUX2根据额外刷新标志信号Extra Refresh Flag,选择地址Add_1的目标位进行输出,或者,选择取反后的地址Add_1的目标位进行输出。同时,由于地址Add_1的目标位在经过第二数据选择器MUX2和第十一反相器D11后,会在时序上有所延后,因此,地址Add_1中除目标位以外的其他位需要经过地址延时模块307,以匹配时序。In the embodiment of the present disclosure, referring to FIG. 35 , the address Add_1 received by the additional address generation circuit 305 from the address selection circuit 304 is divided into two parts for transmission, in which the target bit of the address Add_1 is transmitted to the second data selector MUX2 The first input terminal (i.e., the input terminal marked "0"), the target bit of the address Add_1 is inverted by the eleventh inverter D11 and then transmitted to the second input terminal (i.e., labeled "1" of the second data selector MUX2 ” input terminal), the other bits in the address Add_1 except the target bit are transmitted to the address delay module 307. That is to say, the second data selector MUX2 selects the target bit of address Add_1 for output according to the extra refresh flag signal Extra Refresh Flag, or selects the target bit of the inverted address Add_1 for output. At the same time, since the target bit of address Add_1 will be delayed in timing after passing through the second data selector MUX2 and the eleventh inverter D11, the other bits in address Add_1 except the target bit need to go through the address Delay module 307 to match timing.
本公开实施例中,结合图35和图38,在刷新控制电路接收第一刷新指令并进行第一刷新操作时,若第一刷新指令中存在重复指令,如图38中的第一刷新指令SB CMD<0>中存在重复指令,则额外刷新标志信号Extra Refresh Flag被输出为高电平到第二数据选择器MUX2的控制端;此时,第二数据选择器MUX2选择取反后的地址Add_1的目标位进行输出,从而,额外地址生成电路305输出额外地址k或k+1作为待刷新地址Address。相应的,在刷新控制电路接收第一刷新指令并进行第一刷新操作时,若第一刷新指令中不存在重复指令,如图38中第一刷新指令SB CMD<0>~SB CMD<1>中的常规脉冲对应的时序位置,则额外刷新标志信号Extra Refresh Flag被输出为低电平到第二数据选择器MUX2的控制端;此时,第二数据选择器MUX2选择未取反的地址Add_1的目标位进行输出,从而,额外地址生成电路305输出第一地址n或第二地址n+1作为待刷新地址Address,即额外地址生成电路305将地址选择电路304输出的地址Add_1输出作为待刷新地址Address。In the embodiment of the present disclosure, with reference to Figure 35 and Figure 38, when the refresh control circuit receives the first refresh command and performs the first refresh operation, if there is a repeated command in the first refresh command, such as the first refresh command SB in Figure 38 If there is a repeated instruction in CMD<0>, the extra refresh flag signal Extra Refresh Flag is output to a high level to the control end of the second data selector MUX2; at this time, the second data selector MUX2 selects the inverted address Add_1 The target bit is output, so that the additional address generation circuit 305 outputs the additional address k or k+1 as the address to be refreshed. Correspondingly, when the refresh control circuit receives the first refresh command and performs the first refresh operation, if there is no repeated command in the first refresh command, as shown in Figure 38, the first refresh command SB CMD<0>~SB CMD<1> At the timing position corresponding to the regular pulse in , the extra refresh flag signal Extra Refresh Flag is output to a low level to the control end of the second data selector MUX2; at this time, the second data selector MUX2 selects the non-inverted address Add_1 The target bit is output, so that the additional address generation circuit 305 outputs the first address n or the second address n+1 as the address to be refreshed, that is, the additional address generation circuit 305 outputs the address Add_1 output by the address selection circuit 304 as the address to be refreshed. AddressAddress.
本公开实施例中,参考图35,在刷新控制电路接收第二刷新指令并进行第二刷新操作时,地址选择电路304输出的地址Add_1包括第四地址或第五地址。此时,额外刷新标志信号Extra Refresh Flag保持 低电平,因此,第二数据选择器MUX2选择未取反的地址Add_1的目标位进行输出,从而,额外地址生成电路305输出第四地址或第五地址作为待刷新地址Address,即额外地址生成电路305将地址选择电路304输出的地址Add_1输出作为待刷新地址Address。In the embodiment of the present disclosure, referring to FIG. 35 , when the refresh control circuit receives the second refresh instruction and performs the second refresh operation, the address Add_1 output by the address selection circuit 304 includes the fourth address or the fifth address. At this time, the extra refresh flag signal Extra Refresh Flag remains low. Therefore, the second data selector MUX2 selects the target bit of the address Add_1 that is not inverted for output. Therefore, the extra address generation circuit 305 outputs the fourth address or the fifth address. The address is used as the address to be refreshed, that is, the additional address generation circuit 305 outputs the address Add_1 output by the address selection circuit 304 as the address to be refreshed.
可以理解的是,地址产生器103在额外刷新标志信号Extra Refresh Flag的触发下,通过第二数据选择器MUX2选择地址Add_1中的目标位或者取反后的目标位进行输出,从而,可以在所述第一刷新指令中出现多余的重复指令时,输出额外地址。如此,利用第一刷新指令中多余的重复指令,对有刷新需要的额外地址进行刷新,避免了指令的浪费,提高了刷新效率。It can be understood that, under the trigger of the extra refresh flag signal Extra Refresh Flag, the address generator 103 selects the target bit in the address Add_1 or the inverted target bit for output through the second data selector MUX2, so that it can be When unnecessary repeated instructions appear in the first refresh instruction, additional addresses are output. In this way, the extra repeated instructions in the first refresh instruction are used to refresh the additional addresses that need to be refreshed, thereby avoiding the waste of instructions and improving the refresh efficiency.
需要说明的是,在本公开中,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者装置不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者装置所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括该要素的过程、方法、物品或者装置中还存在另外的相同要素。It should be noted that in the present disclosure, the terms "comprising", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article or device that includes a series of elements not only includes those elements , but also includes other elements not expressly listed or inherent in such process, method, article or apparatus. Without further limitation, an element defined by the statement "comprises a..." does not exclude the presence of additional identical elements in a process, method, article or apparatus that includes that element.
上述本公开实施例序号仅仅为了描述,不代表实施例的优劣。本公开所提供的几个方法实施例中所揭露的方法,在不冲突的情况下可以任意组合,得到新的方法实施例。本公开所提供的几个产品实施例中所揭露的特征,在不冲突的情况下可以任意组合,得到新的产品实施例。本公开所提供的几个方法或设备实施例中所揭露的特征,在不冲突的情况下可以任意组合,得到新的方法实施例或设备实施例。The above serial numbers of the embodiments of the present disclosure are only for description and do not represent the advantages and disadvantages of the embodiments. The methods disclosed in several method embodiments provided in this disclosure can be combined arbitrarily without conflict to obtain new method embodiments. The features disclosed in several product embodiments provided in this disclosure can be combined arbitrarily without conflict to obtain new product embodiments. The features disclosed in several method or device embodiments provided in this disclosure can be combined arbitrarily without conflict to obtain new method embodiments or device embodiments.
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所述权利要求的保护范围为准。The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure. should be covered by the protection scope of this disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.
工业实用性Industrial applicability
本公开实施例提供了一种刷新地址产生电路,包括:刷新控制电路、重复命令处理电路和地址产生器。其中,刷新控制电路用于依次接收多个第一刷新指令并对应进行多次第一刷新操作,当第一刷新操作的次数小于m时输出第一时钟信号,m为大于或等于1的整数。重复命令处理电路耦接刷新控制电路,用于接收第一刷新指令,在第一刷新指令中出现重复指令时输出额外刷新标志信号。地址产生器耦接刷新控制电路和重复命令处理电路,且预存第一地址,用于在接收到第一时钟信号,且未接收到额外刷新标志信号时,响应于第一时钟信号输出待刷新地址,或者,在接收到额外刷新标志信号时,响应于额外刷新标志信号输出额外地址,其中,待刷新地址包括第一地址或第二地址,第二地址相邻于第一地址,额外地址和第一地址的差值大于预设阈值。如此,利用第一刷新指令中多余的重复指令,对有刷新需要的额外地址进行刷新,从而,实现了对重复指令的有效利用,避免了指令的浪费,提高了刷新效率。Embodiments of the present disclosure provide a refresh address generation circuit, including: a refresh control circuit, a repeated command processing circuit, and an address generator. The refresh control circuit is configured to receive multiple first refresh instructions in sequence and perform multiple first refresh operations accordingly. When the number of first refresh operations is less than m, it outputs a first clock signal, where m is an integer greater than or equal to 1. The repeated command processing circuit is coupled to the refresh control circuit and is used for receiving the first refresh command and outputting an additional refresh flag signal when a repeated command occurs in the first refresh command. The address generator is coupled to the refresh control circuit and the repeated command processing circuit, and pre-stores the first address, for outputting the address to be refreshed in response to the first clock signal when the first clock signal is received and no additional refresh flag signal is received. , or when receiving the additional refresh flag signal, output an additional address in response to the additional refresh flag signal, wherein the address to be refreshed includes the first address or the second address, the second address is adjacent to the first address, the additional address and the second address The difference of an address is greater than the preset threshold. In this way, the extra repeated instructions in the first refresh instruction are used to refresh the additional addresses that need to be refreshed, thereby achieving effective use of repeated instructions, avoiding instruction waste, and improving refresh efficiency.

Claims (28)

  1. 一种刷新地址产生电路,所述刷新地址产生电路包括:A refresh address generation circuit, the refresh address generation circuit includes:
    刷新控制电路,用于依次接收多个第一刷新指令并对应进行多次第一刷新操作,当所述第一刷新操作的次数小于m时输出第一时钟信号,m为大于或等于1的整数;Refresh control circuit, configured to receive multiple first refresh instructions in sequence and perform multiple first refresh operations correspondingly, and output a first clock signal when the number of first refresh operations is less than m, where m is an integer greater than or equal to 1 ;
    重复命令处理电路,耦接所述刷新控制电路,用于接收所述第一刷新指令,在所述第一刷新指令中出现重复指令时输出额外刷新标志信号;a repeated command processing circuit, coupled to the refresh control circuit, for receiving the first refresh command, and outputting an additional refresh flag signal when a repeated command occurs in the first refresh command;
    地址产生器,耦接所述刷新控制电路和所述重复命令处理电路,且预存第一地址,用于在接收到所述第一时钟信号,且未接收到所述额外刷新标志信号时,响应于所述第一时钟信号输出待刷新地址,或者,在接收到所述额外刷新标志信号时,响应于所述额外刷新标志信号输出额外地址;其中,所述待刷新地址包括所述第一地址或第二地址,所述第二地址相邻于所述第一地址;所述额外地址和所述第一地址的差值大于预设阈值。An address generator, coupled to the refresh control circuit and the repeated command processing circuit, and pre-stored a first address for responding when the first clock signal is received and the additional refresh flag signal is not received. Output an address to be refreshed in response to the first clock signal, or when receiving the additional refresh flag signal, output an additional address in response to the additional refresh flag signal; wherein the address to be refreshed includes the first address Or a second address, the second address is adjacent to the first address; the difference between the additional address and the first address is greater than a preset threshold.
  2. 根据权利要求1所述的刷新地址产生电路,其中,The refresh address generation circuit according to claim 1, wherein,
    所述刷新控制电路,还用于当所述第一刷新操作的次数等于m时输出第二时钟信号;The refresh control circuit is also configured to output a second clock signal when the number of first refresh operations is equal to m;
    所述地址产生器,还用于接收所述第二时钟信号,响应于所述第二时钟信号改变所述第一地址为第三地址。The address generator is further configured to receive the second clock signal and change the first address to a third address in response to the second clock signal.
  3. 根据权利要求2所述的刷新地址产生电路,其中,所述刷新控制电路包括:The refresh address generation circuit according to claim 2, wherein the refresh control circuit includes:
    刷新窗口信号生成电路,用于接收多个所述第一刷新指令和刷新窗口复位信号,根据多个所述第一刷新指令和所述刷新窗口复位信号生成刷新窗口信号;其中,所述刷新窗口信号的脉冲持续时间为所述刷新控制电路执行一次刷新操作的窗口时间,所述刷新窗口复位信号用于在一次刷新操作结束后对所述刷新窗口信号生成电路进行复位;A refresh window signal generation circuit, configured to receive a plurality of first refresh instructions and a refresh window reset signal, and generate a refresh window signal according to a plurality of the first refresh instructions and the refresh window reset signal; wherein, the refresh window The pulse duration of the signal is the window time for the refresh control circuit to perform a refresh operation, and the refresh window reset signal is used to reset the refresh window signal generation circuit after a refresh operation is completed;
    时钟脉冲生成电路,耦接所述刷新窗口信号生成电路,用于接收刷新窗口信号和所述第一刷新指令,在所述时钟脉冲生成电路接收的所述第一刷新指令的数量小于或等于m且第m次所述第一刷新操作结束前,生成所述第一时钟信号,或者,在第m次所述第一刷新操作结束后,生成所述第二时钟信号。A clock pulse generation circuit, coupled to the refresh window signal generation circuit, for receiving a refresh window signal and the first refresh instruction, where the number of the first refresh instructions received by the clock pulse generation circuit is less than or equal to m And the first clock signal is generated before the m-th first refresh operation ends, or the second clock signal is generated after the m-th first refresh operation ends.
  4. 根据权利要求3所述的刷新地址产生电路,其中,所述时钟脉冲生成电路包括:The refresh address generation circuit according to claim 3, wherein the clock pulse generation circuit includes:
    计数电路,用于接收所述第一刷新指令和计数复位信号,对所述第一刷新指令进行计数,并输出计数信号,以及,根据所述计数复位信号进行复位;A counting circuit configured to receive the first refresh instruction and a count reset signal, count the first refresh instruction, and output a count signal, and perform reset according to the count reset signal;
    计数复位信号生成电路,耦接所述计数电路和所述刷新窗口信号生成电路,用于在第m次所述第一刷新操作结束后,生成所述计数复位信号;A counting reset signal generating circuit, coupled to the counting circuit and the refresh window signal generating circuit, for generating the counting reset signal after the mth first refresh operation is completed;
    第一脉冲生成子电路,耦接所述计数复位信号生成电路,用于在所述第一刷新指令小于m个时,根据所述计数信号生成所述第一时钟信号,或者,在所述第一刷新指令等于m个时根据所述计数复位信号生成所述第二时钟信号。A first pulse generation sub-circuit, coupled to the count reset signal generation circuit, is used to generate the first clock signal according to the count signal when the first refresh instructions are less than m, or, when the first refresh instructions are less than m, When a refresh instruction is equal to m, the second clock signal is generated according to the count reset signal.
  5. 根据权利要求3所述的刷新地址产生电路,其中,所述刷新窗口信号生成电路包括:The refresh address generation circuit according to claim 3, wherein the refresh window signal generation circuit includes:
    多个刷新窗口子信号生成电路,用于接收刷新窗口复位信号且分别依次对应接收多个所述第一刷新指令,根据多个所述第一刷新指令和所述刷新窗口复位信号依次输出多个刷新窗口子信号;A plurality of refresh window sub-signal generating circuits, configured to receive a refresh window reset signal and receive a plurality of first refresh instructions in sequence, and output a plurality of first refresh instructions and the refresh window reset signal in sequence. Refresh window sub-signal;
    刷新窗口子信号处理电路,耦接多个所述刷新窗口子信号生成电路,用于依次接收多个所述刷新窗口子信号,对所述刷新窗口子信号进行逻辑运算,输出所述刷新窗口信号。A refresh window sub-signal processing circuit, coupled to a plurality of the refresh window sub-signal generating circuits, is used to receive a plurality of the refresh window sub-signals in sequence, perform logical operations on the refresh window sub-signals, and output the refresh window signal. .
  6. 根据权利要求5所述的刷新地址产生电路,其中,所述刷新控制电路,还用于接收第二刷新指令并进行第二刷新操作;其中,The refresh address generation circuit according to claim 5, wherein the refresh control circuit is further configured to receive a second refresh instruction and perform a second refresh operation; wherein,
    多个所述刷新窗口子信号生成电路,还用于同时接收所述第二刷新指令和所述刷新窗口复位信号,根据所述第二刷新指令和所述刷新窗口复位信号一一对应生成相同的多个所述刷新窗口子信号;A plurality of the refresh window sub-signal generating circuits are further configured to simultaneously receive the second refresh instruction and the refresh window reset signal, and generate the same sub-signal according to the second refresh instruction and the refresh window reset signal in one-to-one correspondence. A plurality of said refresh window sub-signals;
    所述刷新窗口子信号处理电路,还用于接收多个所述刷新窗口子信号,并将所述刷新窗口子信号进行逻辑运算,输出所述刷新窗口信号。The refresh window sub-signal processing circuit is also used to receive a plurality of the refresh window sub-signals, perform logical operations on the refresh window sub-signals, and output the refresh window signal.
  7. 根据权利要求5所述的刷新地址产生电路,其中,所述刷新控制电路还包括:The refresh address generation circuit according to claim 5, wherein the refresh control circuit further includes:
    第二脉冲生成子电路,耦接所述刷新窗口信号生成电路,用于接收刷新窗口信号和地址命令信号,在所述刷新控制电路开始进行所述第一刷新操作或所述第二刷新操作时生成所述第三时钟信号的第一脉冲,并根据所述地址命令信号的第一脉冲输出所述第三时钟信号的第二脉冲,从而输出所述第三时钟信号;A second pulse generation sub-circuit, coupled to the refresh window signal generation circuit, is used to receive a refresh window signal and an address command signal when the refresh control circuit starts to perform the first refresh operation or the second refresh operation. Generate a first pulse of the third clock signal, and output a second pulse of the third clock signal according to the first pulse of the address command signal, thereby outputting the third clock signal;
    内部刷新窗口信号生成电路,接收所述第三时钟信号,用于根据所述第三时钟信号生成所述内部刷新窗口信号;其中,所述内部刷新窗口信号的第一脉冲在所述第三时钟信号的第一脉冲之后产生,且在所述第三时钟信号的第二脉冲产生之前结束;所述内部刷新窗口信号的第二脉冲在所述第三时钟信号的第二脉冲之后产生,且在所述刷新窗口信号的脉冲结束之前结束;An internal refresh window signal generation circuit receives the third clock signal and is used to generate the internal refresh window signal according to the third clock signal; wherein the first pulse of the internal refresh window signal is generated when the third clock signal The first pulse of the signal is generated after and ends before the second pulse of the third clock signal is generated; the second pulse of the internal refresh window signal is generated after the second pulse of the third clock signal and ends before the second pulse of the third clock signal is generated. The refresh window signal ends before the pulse ends;
    地址命令信号生成电路,用于根据所述内部刷新窗口信号的下降沿生成所述地址命令信号的第一脉冲和第二脉冲;其中,所述地址命令信号的第一脉冲用于生成所述内部刷新窗口信号的第二脉冲以及所述第三时钟信号的第二脉冲;an address command signal generating circuit, configured to generate a first pulse and a second pulse of the address command signal according to the falling edge of the internal refresh window signal; wherein the first pulse of the address command signal is used to generate the internal Refresh the second pulse of the window signal and the second pulse of the third clock signal;
    刷新窗口复位信号生成电路,接收所述内部刷新窗口信号,用于根据所述内部刷新窗口信号的第二脉冲的下降沿生成所述刷新窗口复位信号的脉冲。A refresh window reset signal generating circuit receives the internal refresh window signal and is configured to generate a pulse of the refresh window reset signal according to the falling edge of the second pulse of the internal refresh window signal.
  8. 根据权利要求7所述的刷新地址产生电路,其中,所述刷新控制电路还包括:The refresh address generation circuit according to claim 7, wherein the refresh control circuit further includes:
    信号选择电路,耦接所述计数电路、所述第一脉冲生成子电路和所述第二脉冲生成子电路,用于接 收所述计数信号、所述第一时钟信号、所述第二时钟信号和所述第三时钟信号,在所述刷新控制电路进行所述第一刷新操作时,根据所述计数信号输出所述第一时钟信号或所述第二时钟信号,或者,在所述刷新控制电路进行所述第二刷新操作时,根据计数信号输出所述第三时钟信号。A signal selection circuit, coupled to the counting circuit, the first pulse generating sub-circuit and the second pulse generating sub-circuit, for receiving the counting signal, the first clock signal and the second clock signal and the third clock signal, when the refresh control circuit performs the first refresh operation, the first clock signal or the second clock signal is output according to the count signal, or, when the refresh control circuit When the circuit performs the second refresh operation, it outputs the third clock signal according to the counting signal.
  9. 根据权利要求7所述的刷新地址产生电路,其中,所述刷新控制电路还包括:The refresh address generation circuit according to claim 7, wherein the refresh control circuit further includes:
    地址标志信号生成电路,耦接所述地址命令信号生成电路和所述刷新窗口信号生成电路,用于接收所述地址命令信号和所述刷新窗口信号,根据所述地址命令信号的第一个上升沿生成地址标志信号的上升沿,根据所述刷新窗口信号的下降沿生成所述地址标志信号的下降沿。Address flag signal generation circuit, coupled to the address command signal generation circuit and the refresh window signal generation circuit, is used to receive the address command signal and the refresh window signal, according to the first rise of the address command signal The rising edge of the address mark signal is generated based on the falling edge of the refresh window signal.
  10. 根据权利要求4所述的刷新地址产生电路,其中,所述重复命令处理电路包括:The refresh address generation circuit according to claim 4, wherein the repeated command processing circuit includes:
    重复指令确定电路,耦接所述计数电路,用于接收所述第一刷新指令和所述计数信号,在所述第一刷新指令中未出现重复指令时不进行输出,以及,在所述第一刷新指令中出现重复指令时输出所述重复指令;a repeated instruction determination circuit, coupled to the counting circuit, for receiving the first refresh instruction and the counting signal, not outputting when a repeated instruction does not appear in the first refresh instruction, and, when the first refresh instruction does not occur, it does not output When a repeated instruction occurs in a refresh instruction, the repeated instruction is output;
    额外刷新标志信号生成电路,耦接所述重复指令确定电路和所述刷新窗口信号生成电路,用于接收所述重复指令和所述刷新窗口信号,根据所述重复指令和所述刷新窗口信号生成所述额外刷新标志信号;其中,所述额外刷新标志信号的上升沿是根据所述重复指令的有效脉冲而生成的,所述额外刷新标志信号的下降沿是根据所述刷新窗口信号的下降沿而生成的。An additional refresh flag signal generation circuit, coupled to the repetition instruction determination circuit and the refresh window signal generation circuit, is used to receive the repetition instruction and the refresh window signal, and generates a signal according to the repetition instruction and the refresh window signal. The additional refresh flag signal; wherein, the rising edge of the additional refresh flag signal is generated according to the effective pulse of the repeated instruction, and the falling edge of the additional refresh flag signal is generated according to the falling edge of the refresh window signal. And generated.
  11. 根据权利要求8所述的刷新地址产生电路,其中,所述地址产生器包括:The refresh address generation circuit according to claim 8, wherein the address generator includes:
    地址计数器,耦接所述信号选择电路,用于预存所述第一地址,根据所述第二时钟信号改变所述第一地址为第三地址,或者,根据所述第三时钟信号改变所述第一地址并输出第四地址和第五地址;所述第一地址、所述第四地址和所述第五地址为依次连续的三个地址;An address counter, coupled to the signal selection circuit, used to prestore the first address, change the first address to a third address according to the second clock signal, or change the first address according to the third clock signal. The first address and outputs the fourth address and the fifth address; the first address, the fourth address and the fifth address are three consecutive addresses in sequence;
    地址处理电路,耦接所述地址计数器、所述刷新窗口子信号生成电路和所述重复命令处理电路,用于在所述刷新控制电路进行所述第一刷新操作时接收所述地址标志信号,并获取所述第一地址,若未接收到所述额外刷新标志信号,则根据所述地址标志信号输出所述第一地址或所述第二地址,若接收到所述额外刷新标志信号,则在所述额外刷新标志信号的窗口时间内输出所述额外地址;an address processing circuit, coupled to the address counter, the refresh window sub-signal generation circuit and the repeated command processing circuit, for receiving the address flag signal when the refresh control circuit performs the first refresh operation, And obtain the first address, if the additional refresh flag signal is not received, then output the first address or the second address according to the address flag signal, if the additional refresh flag signal is received, then Output the additional address within the window time of the additional refresh flag signal;
    所述地址处理电路,还用于在所述刷新控制电路进行所述第二刷新操作时,依次获取所述第四地址和所述第五地址,并根据多个所述刷新窗口子信号依次输出所述第四地址和所述第五地址。The address processing circuit is also configured to sequentially obtain the fourth address and the fifth address when the refresh control circuit performs the second refresh operation, and sequentially output according to a plurality of the refresh window sub-signals. the fourth address and the fifth address.
  12. 根据权利要求11所述的刷新地址产生电路,其中,所述地址处理电路包括:The refresh address generation circuit according to claim 11, wherein the address processing circuit includes:
    控制信号生成电路,耦接所述刷新窗口子信号生成电路和所述地址标志信号生成电路,用于接收多个所述刷新窗口子信号和所述地址标志信号,根据多个所述刷新窗口子信号和所述地址标志信号生成地址控制信号;A control signal generation circuit, coupled to the refresh window sub-signal generation circuit and the address flag signal generation circuit, is used to receive a plurality of the refresh window sub-signals and the address flag signals, and generates a control signal according to a plurality of the refresh window sub-signals. signal and the address flag signal to generate an address control signal;
    地址选择电路,耦接所述地址计数器和所述控制信号生成电路,用于在所述刷新控制电路接收所述第一刷新指令时,在所述地址控制信号的上升沿到来前输出所述第一地址,或者,在所述地址控制信号的上升沿到来后在所述第一地址的基础上进行累加,得到并输出所述第二地址;所述地址选择电路,还用于在所述刷新控制电路接收所述第二刷新指令时,响应于所述地址控制信号,依次输出所述第四地址和所述第五地址;An address selection circuit, coupled to the address counter and the control signal generation circuit, configured to output the first refresh instruction before the rising edge of the address control signal arrives when the refresh control circuit receives the first refresh instruction. an address, or, after the rising edge of the address control signal arrives, the first address is accumulated to obtain and output the second address; the address selection circuit is also used to perform the refresh operation When the control circuit receives the second refresh instruction, it responds to the address control signal and sequentially outputs the fourth address and the fifth address;
    额外地址生成电路,耦接所述地址选择电路,用于在所述刷新控制电路进行所述第一刷新操作,且所述额外地址生成电路未接收到所述额外刷新标志信号时,接收并输出所述第一地址和所述第二地址;或者,在所述刷新控制电路进行所述第一刷新操作,且所述额外地址生成电路接收到所述额外刷新标志信号时,接收所述第一地址和所述第二地址,根据所述额外刷新标志信号将所述第一地址和所述第二地址中的目标位取反,得到并输出所述额外地址,其中,所述目标位为所述第一地址和所述第二地址中高于预设位的任一地址位;或者,在所述刷新控制电路进行所述第二刷新操作时,接收并输出所述第四地址或所述第五地址。An additional address generation circuit, coupled to the address selection circuit, for receiving and outputting when the refresh control circuit performs the first refresh operation and the additional address generation circuit does not receive the additional refresh flag signal. The first address and the second address; or, when the refresh control circuit performs the first refresh operation and the additional address generation circuit receives the additional refresh flag signal, receiving the first address and the second address, invert the target bits in the first address and the second address according to the additional refresh flag signal, and obtain and output the additional address, wherein the target bit is the Any address bit higher than the preset bit in the first address and the second address; or, when the refresh control circuit performs the second refresh operation, receive and output the fourth address or the third address. Five addresses.
  13. 根据权利要求4所述的刷新地址产生电路,其中,所述计数电路包括:The refresh address generation circuit according to claim 4, wherein the counting circuit includes:
    多个第一反相器,多个所述第一反相器的输入端依次接收多个所述第一刷新指令;A plurality of first inverters, the input terminals of the plurality of first inverters receive a plurality of the first refresh instructions in sequence;
    第二反相器,所述第二反相器的输入端接收所述计数复位信号;a second inverter, an input terminal of which receives the count reset signal;
    多个第一锁存器,多个所述第一锁存器的置位端依次对应连接多个所述第一反相器的输出端,多个所述第一锁存器的复位端均连接所述第二反相器的输出端,多个所述第一锁存器依次对应输出多个所述计数信号。A plurality of first latches, the set terminals of the plurality of first latches are connected to the output terminals of a plurality of first inverters in sequence, and the reset terminals of the plurality of first latches are all connected Connected to the output end of the second inverter, a plurality of first latches correspondingly output a plurality of counting signals.
  14. 根据权利要求4所述的刷新地址产生电路,其中,所述计数复位信号生成电路包括:The refresh address generation circuit according to claim 4, wherein the count reset signal generation circuit includes:
    第一与门,所述第一与门的输入端接收多个所述计数信号;A first AND gate, the input end of the first AND gate receives a plurality of the counting signals;
    第三反相器,所述第三反相器的输入端接收所述刷新窗口信号;A third inverter, an input end of which receives the refresh window signal;
    第二与门,所述第二与门的输入端分别连接所述第一与门的输出端和所述第三反相器的输出端;a second AND gate, the input end of the second AND gate is respectively connected to the output end of the first AND gate and the output end of the third inverter;
    第一延时器,所述第一延时器的输入端连接所述第二与门的输出端;A first delayer, the input terminal of the first delayer is connected to the output terminal of the second AND gate;
    第四反相器,所述第四反相器的输入端连接所述第一延时器的输出端;a fourth inverter, the input terminal of the fourth inverter is connected to the output terminal of the first delay device;
    第三与门,所述第三与门的输入端分别连接所述第二与门的输出端和所述第四反相器的输出端,所述第三与门输出所述计数复位信号。A third AND gate, the input end of the third AND gate is respectively connected to the output end of the second AND gate and the output end of the fourth inverter, and the third AND gate outputs the count reset signal.
  15. 根据权利要求4所述的刷新地址产生电路,其中,所述第一脉冲生成子电路包括:The refresh address generation circuit according to claim 4, wherein the first pulse generation sub-circuit includes:
    第二延时器,所述第二延时器的输入端接收所述计数复位信号;a second delayer, an input terminal of which receives the count reset signal;
    第三延时器,所述第三延时器的输入端连接所述第二延时器的输出端;a third delayer, the input terminal of the third delayer is connected to the output terminal of the second delayer;
    第一或门,所述第一或门的输入端分别连接所述第二延时器的输出端和所述第三延时器的输出端,所述第一或门输出所述第一时钟信号或所述第二时钟信号。A first OR gate, the input terminal of the first OR gate is respectively connected to the output terminal of the second delayer and the output terminal of the third delayer, and the first OR gate outputs the first clock signal or the second clock signal.
  16. 根据权利要求6所述的刷新地址产生电路,其中,所述刷新窗口子信号包括:第一刷新窗口子信号或第二刷新窗口子信号;每个所述刷新窗口子信号生成电路包括:The refresh address generation circuit according to claim 6, wherein the refresh window sub-signal includes: a first refresh window sub-signal or a second refresh window sub-signal; each of the refresh window sub-signal generation circuit includes:
    第一或非门,当所述刷新控制电路进行所述第一刷新操作时,所述第一或非门的第一输入端接收对应的所述第一刷新指令,或者,当所述刷新控制电路进行所述第二刷新操作时,所述第一或非门的第二输入端接收所述第二刷新指令;A first NOR gate. When the refresh control circuit performs the first refresh operation, the first input end of the first NOR gate receives the corresponding first refresh instruction, or when the refresh control circuit When the circuit performs the second refresh operation, the second input terminal of the first NOR gate receives the second refresh instruction;
    第二锁存器,所述第二锁存器的置位端连接所述第一或非门的输出端,所述第二锁存器的复位端接收所述刷新窗口复位信号;当所述刷新控制电路进行所述第一刷新操作时,所述第二锁存器输出对应的所述第一刷新窗口子信号,或者,当所述刷新控制电路进行所述第二刷新操作时,所述第二锁存器输出对应的所述第二刷新窗口子信号。a second latch, the set end of the second latch is connected to the output end of the first NOR gate, and the reset end of the second latch receives the refresh window reset signal; when the When the refresh control circuit performs the first refresh operation, the second latch outputs the corresponding first refresh window sub-signal, or when the refresh control circuit performs the second refresh operation, the second latch outputs the corresponding first refresh window sub-signal. The second latch outputs the corresponding second refresh window sub-signal.
  17. 根据权利要求16所述的刷新地址产生电路,其中,所述刷新窗口子信号处理电路包括:The refresh address generation circuit according to claim 16, wherein the refresh window sub-signal processing circuit includes:
    第二或门,当所述刷新控制电路进行所述第一刷新操作时,所述第二或门的输入端分别接收多个所述第一刷新窗口子信号,或者,当所述刷新控制电路进行所述第二刷新操作时,所述第二或门的输入端分别接收相同的多个所述第二刷新窗口子信号;所述第二或门输出所述刷新窗口信号。a second OR gate. When the refresh control circuit performs the first refresh operation, the input terminal of the second OR gate receives multiple first refresh window sub-signals respectively, or when the refresh control circuit When performing the second refresh operation, the input terminals of the second OR gate receive the same plurality of second refresh window sub-signals respectively; the second OR gate outputs the refresh window signal.
  18. 根据权利要求7所述的刷新地址产生电路,其中,所述第二脉冲生成子电路包括:The refresh address generation circuit according to claim 7, wherein the second pulse generation sub-circuit includes:
    第四延时器,所述第四延时器的输入端接收所述刷新窗口信号;a fourth delayer, an input end of which receives the refresh window signal;
    第五反相器,所述第五反相器的输入端连接所述第四延时器的输出端;a fifth inverter, the input terminal of the fifth inverter is connected to the output terminal of the fourth delay device;
    第四与门,所述第四与门的第一输入端接收所述刷新窗口信号,所述第四与门的第二输入端连接所述第五反相器的输出端;A fourth AND gate, the first input end of the fourth AND gate receives the refresh window signal, and the second input end of the fourth AND gate is connected to the output end of the fifth inverter;
    第六反相器,所述第六反相器的输入端接收地址标志信号;A sixth inverter, the input terminal of the sixth inverter receives the address flag signal;
    第五与门,所述第五与门的第一输入端连接所述第六反相器的输出端,所述第五与门的第二输入端接收所述地址命令信号;a fifth AND gate, the first input terminal of the fifth AND gate is connected to the output terminal of the sixth inverter, and the second input terminal of the fifth AND gate receives the address command signal;
    第二或非门,所述第二或非门的输入端分别连接所述第四与门的输出端和所述第五与门的输出端;a second NOR gate, the input end of the second NOR gate is respectively connected to the output end of the fourth AND gate and the output end of the fifth AND gate;
    第七反相器,所述第七反相器的输入端连接所述第二或非门的输出端,所述第七反相器输出所述第三时钟信号。A seventh inverter, the input terminal of the seventh inverter is connected to the output terminal of the second NOR gate, and the seventh inverter outputs the third clock signal.
  19. 根据权利要求7所述的刷新地址产生电路,其中,所述地址命令信号生成电路包括:The refresh address generation circuit according to claim 7, wherein the address command signal generation circuit includes:
    第八反相器,所述第八反相器的输入端接收所述内部刷新窗口信号;An eighth inverter, the input end of the eighth inverter receives the internal refresh window signal;
    第五延时器,所述第五延时器的输入端连接所述第八反相器的输入端,接收所述内部刷新窗口信号;A fifth delayer, the input terminal of the fifth delayer is connected to the input terminal of the eighth inverter, and receives the internal refresh window signal;
    第六与门,所述第六与门的输入端分别连接所述第八反相器的输出端和所述第五延时器的输出端,所述第六与门输出所述地址命令信号。A sixth AND gate. The input terminals of the sixth AND gate are respectively connected to the output terminal of the eighth inverter and the output terminal of the fifth delayer. The sixth AND gate outputs the address command signal. .
  20. 根据权利要求19所述的刷新地址产生电路,其中,所述内部刷新窗口信号生成电路包括:The refresh address generation circuit according to claim 19, wherein the internal refresh window signal generation circuit includes:
    第三锁存器,所述第三锁存器的置位端接收所述第三时钟信号,所述第三锁存器的复位端连接所述第八反相器的输出端,所述第三锁存器输出所述内部刷新窗口信号。A third latch, the set terminal of the third latch receives the third clock signal, the reset terminal of the third latch is connected to the output terminal of the eighth inverter, and the third latch receives the third clock signal. Three latches output the internal refresh window signal.
  21. 根据权利要求7所述的刷新地址产生电路,其中,所述刷新窗口复位信号生成电路包括:The refresh address generation circuit according to claim 7, wherein the refresh window reset signal generation circuit includes:
    第六延时器,所述第六延时器的输入端接收地址标志信号;A sixth delayer, the input end of the sixth delayer receives the address flag signal;
    第七与门,所述第七与门的第一输入端连接所述第六延时器的输出端,所述第七与门的第二输入端接收所述内部刷新窗口信号;A seventh AND gate, the first input end of the seventh AND gate is connected to the output end of the sixth delayer, and the second input end of the seventh AND gate receives the internal refresh window signal;
    第七延时器,所述第七延时器的输入端连接所述第七与门的输出端,所述第七延时器输出所述刷新窗口复位信号。A seventh delayer, the input terminal of the seventh delayer is connected to the output terminal of the seventh AND gate, and the seventh delayer outputs the refresh window reset signal.
  22. 根据权利要求8所述的刷新地址产生电路,其中,所述信号选择电路包括:The refresh address generation circuit according to claim 8, wherein the signal selection circuit includes:
    第三或非门,所述第三或非门的输入端分别接收多个所述计数信号;A third NOR gate, the input terminals of the third NOR gate respectively receive a plurality of the counting signals;
    第三或门,所述第三或门的第一输入端接收所述第一时钟信号或所述第二时钟信号,所述第三或门的第二输入端接收所述第三时钟信号;A third OR gate, a first input terminal of the third OR gate receives the first clock signal or the second clock signal, and a second input terminal of the third OR gate receives the third clock signal;
    第八与门,所述第八与门的第一输入端连接所述第三或非门的输出端,所述第八与门的第二输入端连接所述第三或门的输出端,所述第八与门输出所述第一时钟信号、所述第二时钟信号或所述第三时钟信号。An eighth AND gate, the first input end of the eighth AND gate is connected to the output end of the third NOR gate, and the second input end of the eighth AND gate is connected to the output end of the third OR gate, The eighth AND gate outputs the first clock signal, the second clock signal or the third clock signal.
  23. 根据权利要求9所述的刷新地址产生电路,其中,所述地址标志信号生成电路包括:The refresh address generation circuit according to claim 9, wherein the address flag signal generation circuit includes:
    第九反相器,所述第九反相器的输入端接收所述地址命令信号;A ninth inverter, the input terminal of the ninth inverter receives the address command signal;
    第四锁存器,所述第四锁存器的置位端连接所述第九反相器的输出端,所述第四锁存器的复位端接收所述刷新窗口信号,所述第四锁存器输出所述地址标志信号。a fourth latch, the set terminal of the fourth latch is connected to the output terminal of the ninth inverter, the reset terminal of the fourth latch receives the refresh window signal, and the fourth latch The latch outputs the address flag signal.
  24. 根据权利要求10所述的刷新地址产生电路,其中,所述重复指令确定电路包括:The refresh address generation circuit according to claim 10, wherein the repeated instruction determination circuit includes:
    多个第八延时器,多个所述第八延时器的输入端依次接收多个所述计数信号;A plurality of eighth delayers, the input terminals of the plurality of eighth delayers receive a plurality of the counting signals in sequence;
    多个第九与门,多个所述第九与门的第一输入端依次连接多个所述第八延时器的输出端,多个所述第九与门的第二输入端依次接收多个所述第一刷新指令;A plurality of ninth AND gates, the first input terminals of the plurality of ninth AND gates are sequentially connected to the output terminals of a plurality of eighth delays, and the second input terminals of the plurality of ninth AND gates are sequentially connected to a plurality of first refresh instructions;
    第四或非门,所述第四或非门的输入端分别连接多个所述第九与门的输出端,所述第四或非门输出所述重复指令。A fourth NOR gate, the input terminals of the fourth NOR gate are respectively connected to the output terminals of a plurality of the ninth AND gates, and the fourth NOR gate outputs the repeated instruction.
  25. 根据权利要求10所述的刷新地址产生电路,其中,所述额外刷新标志信号生成电路包括:The refresh address generation circuit according to claim 10, wherein the additional refresh flag signal generation circuit includes:
    第五锁存器,所述第五锁存器的置位端接收所述重复指令,所述第五锁存器的复位端接收所述刷新窗口信号,所述第五锁存器输出所述额外刷新标志信号。A fifth latch, the set end of the fifth latch receives the repeated instruction, the reset end of the fifth latch receives the refresh window signal, and the fifth latch outputs the Additional refresh flag signal.
  26. 根据权利要求12所述的刷新地址产生电路,其中,所述控制信号生成电路包括:The refresh address generation circuit according to claim 12, wherein the control signal generation circuit includes:
    第十与门,所述第十与门的输入端分别对应接收多个所述刷新窗口子信号;A tenth AND gate, the input terminals of the tenth AND gate respectively receive a plurality of the refresh window sub-signals;
    第十反相器,所述第十反相器的输入端接收所述地址标志信号;A tenth inverter, the input end of the tenth inverter receives the address flag signal;
    第五或非门,所述第五或非门的第一输入端连接所述第十与门的输出端,所述第五或非门的第二输入端连接所述第十反相器的输出端,所述第五或非门输出所述地址控制信号。A fifth NOR gate, the first input terminal of the fifth NOR gate is connected to the output terminal of the tenth AND gate, and the second input terminal of the fifth NOR gate is connected to the output terminal of the tenth inverter. At the output end, the fifth NOR gate outputs the address control signal.
  27. 根据权利要求12所述的刷新地址产生电路,其中,所述地址选择电路包括:加法器和第一数据选择器;The refresh address generation circuit according to claim 12, wherein the address selection circuit includes: an adder and a first data selector;
    所述加法器的输入端连接所述地址计数器;所述加法器用于在所述刷新控制电路接收所述第一刷新指令时,获取所述第一地址,在所述第一地址基础上进行累加,得到所述第二地址;The input end of the adder is connected to the address counter; the adder is used to obtain the first address when the refresh control circuit receives the first refresh instruction, and perform accumulation based on the first address. , obtain the second address;
    所述第一数据选择器的第一输入端连接所述地址计数器,所述第一数据选择器的第二输入端连接所述加法器,所述第一数据选择器的控制端接收所述地址控制信号,所述第一数据选择器的输出端作为所述地址选择电路的输出端;The first input end of the first data selector is connected to the address counter, the second input end of the first data selector is connected to the adder, and the control end of the first data selector receives the address Control signal, the output terminal of the first data selector serves as the output terminal of the address selection circuit;
    所述第一数据选择器,用于在所述刷新控制电路接收所述第一刷新指令时,从所述地址计数器获取所述第一地址,并从所述加法器获取所述第二地址,响应于所述地址控制信号,选择所述第一地址或所述第二地址进行输出;The first data selector is used to obtain the first address from the address counter and the second address from the adder when the refresh control circuit receives the first refresh instruction, In response to the address control signal, selecting the first address or the second address for output;
    所述第一数据选择器,还用于在所述刷新控制电路接收所述第二刷新指令时,从所述地址计数器获取所述第四地址或所述第五地址,响应于所述地址控制信号,将所述第四地址或所述第五地址输出。The first data selector is also used to obtain the fourth address or the fifth address from the address counter when the refresh control circuit receives the second refresh instruction, in response to the address control signal to output the fourth address or the fifth address.
  28. 根据权利要求27所述的刷新地址产生电路,其中,所述额外地址生成电路包括:第十一反相器、第二数据选择器和地址延时模块;The refresh address generation circuit according to claim 27, wherein the additional address generation circuit includes: an eleventh inverter, a second data selector and an address delay module;
    所述第十一反相器的输入端连接所述地址选择电路的输出端;所述第十一反相器,用于在所述刷新控制电路接收所述第一刷新指令时,从所述地址选择电路获取所述第一地址或所述第二地址中的目标位,并将所述第一地址或所述第二地址中的目标位取反后输出;The input end of the eleventh inverter is connected to the output end of the address selection circuit; the eleventh inverter is used to select the first refresh instruction from the refresh control circuit when the refresh control circuit receives the first refresh instruction. The address selection circuit obtains the target bit in the first address or the second address, inverts the target bit in the first address or the second address, and outputs it;
    所述第二数据选择器的第一输入端连接所述地址选择电路的输出端,所述第二数据选择器的第二输入端连接所述第十一反相器的输出端;所述第二数据选择器,用于在所述刷新控制电路接收所述第一刷新指令,且所述第二数据选择器的控制端未接收到所述额外刷新标志信号时,从所述地址选择电路获取所述第一地址或所述第二地址中的目标位,并将所述第一地址或所述第二地址中的目标位输出;或者,在所述刷新控制电路接收所述第一刷新指令,且所述第二数据选择器的控制端接收到所述额外刷新标志信号时,从所述第十一反相器获取取反后的所述第一地址或所述第二地址中的目标位,并将取反后的所述第一地址或所述第二地址中的目标位输出;The first input terminal of the second data selector is connected to the output terminal of the address selection circuit, and the second input terminal of the second data selector is connected to the output terminal of the eleventh inverter; Two data selectors, used to obtain the additional refresh flag signal from the address selection circuit when the refresh control circuit receives the first refresh instruction and the control end of the second data selector does not receive the additional refresh flag signal. The target bit in the first address or the second address, and output the target bit in the first address or the second address; or, receive the first refresh instruction in the refresh control circuit , and when the control end of the second data selector receives the additional refresh flag signal, the inverted first address or the target in the second address is obtained from the eleventh inverter. bit, and output the inverted target bit in the first address or the second address;
    所述地址延时模块的输入端连接所述地址选择电路的输出端;所述地址延时模块,用于在所述刷新控制电路接收所述第一刷新指令时,从所述地址选择电路获取所述第一地址或所述第二地址中的其他位,将所述第一地址或所述第二地址中的其他位延时后输出;所述其他位为除目标位以外的地址位。The input end of the address delay module is connected to the output end of the address selection circuit; the address delay module is used to obtain the data from the address selection circuit when the refresh control circuit receives the first refresh instruction. Other bits in the first address or the second address are output after being delayed; the other bits are address bits other than the target bit.
PCT/CN2022/123849 2022-05-30 2022-10-08 Refresh address generation circuit WO2023231263A1 (en)

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