WO2023222483A1 - Optoelectronic device and method for manufacturing an optoelectronic device - Google Patents

Optoelectronic device and method for manufacturing an optoelectronic device Download PDF

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Publication number
WO2023222483A1
WO2023222483A1 PCT/EP2023/062460 EP2023062460W WO2023222483A1 WO 2023222483 A1 WO2023222483 A1 WO 2023222483A1 EP 2023062460 W EP2023062460 W EP 2023062460W WO 2023222483 A1 WO2023222483 A1 WO 2023222483A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
carrier
layer
emitting element
cover
Prior art date
Application number
PCT/EP2023/062460
Other languages
French (fr)
Inventor
Joerg Erich Sorg
Herbert Brunner
Wan Leng LIM
Choo Kean LIM
Choon Keat OR
Choo Hooi LIM
Original Assignee
Ams-Osram International Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams-Osram International Gmbh filed Critical Ams-Osram International Gmbh
Publication of WO2023222483A1 publication Critical patent/WO2023222483A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Definitions

  • the present invention relates to an optoelectronic device , as well as a method for manufacturing an optoelectronic device .
  • an optical window is attached to the housing .
  • An interface between the housing and the window, to fix the window to the housing can for example be realized by an organic material ( glue ) .
  • the glue interface may however be exposed to radiation, in particular to ultraviolet radiation (UVC ) generated within the laser package .
  • UVC ultraviolet radiation
  • the glue interface might thereby be depredated . Resulting degradation effects may lead to leakage , delamination and in worst case to a detachment of the entire window .
  • An optoelectronic device comprises a carrier and at least one light emitting element arranged on the carrier , wherein the at least one light emitting element is configured to emit light with a wavelength shorter than 550 nm, and in particular with a wavelength in the range between 250 nm and 550 nm .
  • the light emitting element can for example , be configured to emit short-wave laser light in the blue and/or ultraviolet range .
  • the optoelectronic device further comprises a cover element being substantially transparent to the light emitted by the light emitting element , and which, viewed in an emission direction of the light emitting element , is arranged after the light emitting element on the carrier .
  • the cover element is attached to the carrier by use of an interface layer , such that the interface layer is arranged between the cover element and the carrier .
  • the interface layer comprises an adhesive layer and a shielding layer , wherein the shielding layer is substantially opaque/intransparent to the light emitted by the light emitting element and is arranged between the adhesive layer and the cover element .
  • the adhesive layer can for example be realized by an organic material ( glue ) .
  • an exposure of the adhesive layer to light emitted by the at least one light emitting element , and in particular to light emitted by the at least one light emitting element and being reflected within the optoelectronic device can at least be reduced .
  • the ageing behaviour of the adhesive layer, and coming with this the ageing behaviour of the light emitting element can be improved .
  • the interface layer and in particular the adhesive layer is on the one hand directly be exposed to radiation emitted by the at least one light emitting element possibly leading to an exposure of the whole adhesive layer by waveguide effects within the interface layer , and is on the other hand for example be exposed to light emitted by the at least one light emitting element through total internal reflection ( TIR) effects within the cover element .
  • TIR total internal reflection
  • the shielding layer is introduced into the interface layer being opaque to the light emitted by the light emitting element .
  • the shielding layer is thereby arranged between the adhesive layer and the cover element .
  • the shielding layer thus prevents , radiation traveling within the cover element and possibly outcou- pling into the interface layer, from impinging into the adhesive layer .
  • the interface layer may comprise a labyrinth structure .
  • the interface layer can therefore for example comprise a step or a kink such that light traveling through a first portion of the interface layer is hindered from traveling further into a second portion which is tilted with a sufficiently large angle with respect to the first portion .
  • the proposed optoelectronic device has the advantage that a hermetically sealed housing for a light emitting element configured to emit light with a wavelength shorter than 550 nm is provided with a reduced ris k of leakage , delamination and in worst case to a detachment of the cover element is reduced due to aging effects .
  • An optoelectronic device comprises a carrier with at least a first and a second contact via extending through the carrier, at least one light emitting element arranged on the carrier , a cover element and an interface layer arranged between the cover element and the carrier .
  • the light emitting element is configured to emit light with a wavelength shorter than 550 nm and is electrically coupled to the first and second contact via .
  • the cover element is substantially transparent to the light emitted by the light emitting element and is , viewed in an emission direction of the light emitting element , arranged after the light emitting element on the carrier .
  • the interface layer being arranged between the cover element and the carrier comprises an adhesive layer and a shielding layer , wherein the shielding layer is substantially opaque to the light emitted by the light emitting element and is arranged between the adhesive layer and the cover element .
  • the cover element and/or the carrier comprises at least one step along which the interface layer extends .
  • the at least one step can for each or both of the cover element and the carrier is formed in some instances by two substantially parallel spaced-apart surfaces and a further surface connecting the two parallel surfaces .
  • the interface layer may then extend at least along one of the two parallel surfaces and along the further surface connecting the two parallel surfaces thus also forming a step .
  • the cover element and the carrier may for example each comprise a step, wherein the two steps are formed in such a way, that they each form a counterpart of the other step and interlock with each other with the interface layer being arranged in between . It can however also be conceivable that only one of the cover element and the carrier comprises a step and that the two elements fit together such that they interlock with each other with the interface layer being arranged in between .
  • Each or one of the cover element and the carrier may also comprise several steps , wherein the two elements are formed in such a way that they form a counterpart of the other and interlock with each other with the interface layer being arranged in between . This can in particular lead to an interface comprising a labyrinth structure when extending along the steps .
  • At least one of the adhesive layer and the shielding layer comprises at least one step in particular such that a light propagation of light emitted by the light emitting element along the adhesive layer is interrupted .
  • a design can for example be caused by the cover element and/or the carrier comprising at least one step along which the interface layer extends .
  • the adhesive layer can for example comprise a step or a kink such that light traveling through a first portion of the adhesive layer is blocked from traveling further into a second portion which is tilted with a sufficiently large angle with respect to the first portion .
  • the shielding layer covers at least a first and a second surface side of the adhesive layer .
  • the shielding layer may for example cover surface sides of the adhesive layer being potentially exposed to direct emission of light of the at least one light emitting element and/or being potentially exposed to light emitted from the at least one light emitting element and being reflected within the optoelectronic device .
  • the first and the second surface side of the adhesive layer can for example be in particular substantially perpendicular to each other .
  • the carrier forms a first cavity, on a bottom surface of which the at least one light emitting element is arranged .
  • the first cavity can then be covered by the cover element enclosing the at least one light emitting element within the first cavity .
  • a possible step in the carrier can in particular be formed in an upper portion of the carrier framing the cavity and facing the cover element .
  • the cover element can form a second cavity in which the light emitting element is arranged/enclosed .
  • the cover element may completely cover the cavity as seen in plan view, and in particular at least partially protrude a frame formed by the carrier . Accordingly, the cover element may have a proj ected area, as seen in plan view, that is at least greater than a proj ected area of the cavity or the area enclosed by the frame . For example , when viewed from above , the cover element may have a proj ected area substantially equal in size to a proj ected area of an outer edge of the frame formed by the carrier .
  • the at least one light emitting element is formed by surface emitting laser diode configured to emit light with a wavelength shorter than 550 nm and in particular with a wavelength in the range between 250 nm and 550 nm .
  • the light emitting element can for example , be configured to emit shortwave laser light in the blue and/or ultraviolet range .
  • the at least one light emitting element is formed by a side emitting laser diode .
  • the light emitting element is formed in the form of a side-emitting laser diode and has a light emitting region on one of the side surfaces of the laser diode through which the laser diode emits light in the form of a light cone in the emission direction .
  • the optoelectronic device further comprises a submount arranged between the light emitting element and the carrier .
  • the submount can in case of the at least one light emitting element being formed by a side emitting laser diode serve as a raise to prevent a so-called beam clipping of the light cone emitted by the laser diode in the emission direction .
  • the adhesive layer comprises scattering particles and/or comprises a material substantially opaque to the radiation emitted by the at least one light emitting element . Due to this , a light propagation within the adhesive layer due to waveguide effects can further be reduced .
  • the shielding layer comprises a material that is opaque to the radiation emitted by the at least one light emitting element and can thus form an optical barrier for the radiation emitted by the at least one light emitting element .
  • the shielding layer can therefore for example comprise a metal and/or light absorbing particles .
  • the material of the cover element is selected from the group of epoxies or glasses .
  • the material of the cover element is characterised by substantially not absorbing or only barely absorbing light with a wavelength shorter than 550 nm, and in particular with a wavelength in the range between 250 nm to 550 nm.
  • the cover element is formed by a lens or other beam-shaping element . This allows beam shaping, or light scattering, of the light emitted by the optoelectronic device .
  • the optoelectronic device comprises electrical contact surfaces on a surface side of the carrier facing away from the at least one light emitting element , making it surface mountable .
  • a method according to the invention for manufacturing at least one optoelectronic device comprises the steps :
  • Providing a cover layer in particular of a material substantially transparent to light with a wavelength shorter than 550 nm;
  • the shielding material being substantially opaque to light with a wavelength shorter than 550 nm;
  • At least one subassembly comprising a carrier with a first and a second contact via extending through the carrier , and a light emitting element arranged on the carrier , the light emitting element being configured to emit light with a wavelength shorter than 550 nm and being electrically coupled to the first and second contact via ;
  • the step of applying the shielding material comprises dispensing the shielding material into the first groove pattern, such that a bottom surface and at least portions of side surfaces of the grooves of the first groove pattern are covered with the shielding material .
  • the step of attaching the at least one subassembly to the cover layer comprises applying an adhesive material into the first groove pattern on the shielding mate- rial .
  • the method further comprises a step of separating a plurality of optoelectronic devices along grooves of the first groove pattern in particular by breaking them off of each other . Therefore , a plurality of subassemblies can be attached to the to the cover layer each one of the subassemblies being surrounded by grooves of the first groove pattern .
  • Fig . 1 a sectional view of a hermetically sealed laser package
  • Fig . 2 to 8 each a sectional view of an embodiment of an optoelectronic device according to some aspects of the proposed principle ;
  • FIG. 9A to 91 steps of a method for manufacturing an optoelectronic device according to some aspects of the proposed principle .
  • Figure 1 shows a sectional view of a hermetically sealed laser package comprising a carrier 2 with a first and a second contact via 2 . 1 , 2 . 2 extending through the carrier 2 .
  • the laser package further comprises a light emitting element 3 arranged on the carrier 2 and being coupled to the first and second contact via 2 . 1 , 2 . 2 .
  • the laser package is hermetically sealed using a cover element 7 which, viewed in an emission direction L of the light emitting element 3 , is arranged after the light emitting element 3 on the carrier 2 and which is attached to the carrier 2 by use of an adhesive layer 4 . 1 .
  • the cover element 7 is transparent to the light emitted from the light emitting element 3 .
  • the small arrows in the figure indicate possible light paths of the light emitted by the light emitting element 3 .
  • the small arrows particularly indicate light paths of light exposing the adhesive layer 4 . 1 possibly causing ageing effects in the adhesive layer 4 . 1 .
  • the adhesive layer 4 . 1 can on the one hand for example directly be exposed to radiation emitted by the light emitting element 3 possibly leading to an exposure of the whole adhesive layer 4 . 1 by waveguide effects within the adhesive layer ( shown in the zoomed in detailed view) .
  • the adhesive layer 4 . 1 can for example be exposed to light emitted by the light emitting element 3 through TIR effects within the cover element 7 .
  • Figures 2 to 8 show embodiments of an optoelectronic device 1 in which the risk of aging effects of the adhesive layer 4 . 1 is reduced compared to the laser package shown in Figure 1 .
  • the optoelectronic devices 1 each comprise a carrier 2 with a first and a second contact via 2 . 1 , 2 . 2 extending through the carrier 2 .
  • the optoelectronic devices 1 further comprise each a light emitting element 3 arranged on the carrier 2 being coupled to the first and second contact via 2 . 1 , 2 . 2 .
  • the optoelectronic devices 1 are hermetically sealed using a cover element 7 which, viewed in an emission direction L of the light emitting element 3 , is arranged after the light emitting element 3 on the carrier 2 and which is attached to the carrier 2 by use of an interface layer 4 .
  • the light emitting element 3 is each configured to emit light with a wavelength shorter than 550 nm and the cover element 7 is transparent to the light emitted from the light emitting element 3 .
  • the material of the cover element 7 can in particular be selected from the group of epoxies or glasses .
  • the interface layer 4 comprises an adhesive layer 4 . 1 and a shielding layer 4 . 2 , wherein the shielding layer 4 . 2 is opaque to the light emitted by the light emitting element 3 and is arranged between the adhesive layer 4 . 1 and the cover element 7 .
  • the shielding layer 4 . 2 in particular covers the adhesive layer 4 . 1 , at least the surface ( s ) of the adhesive layer 4 . 1 facing the cover element 7 .
  • the shielding layer 4 . 2 thus covers the adhesive layer 4 . 1 particularly from light emitted by the light emitting element 3 and impinging onto the interface layer through TIR effects within the cover element 7 .
  • the carrier 2 shown in Fig . 2 comprises a cavity 5 in which the light emitting element 3 is arranged .
  • the bottom portion of the carrier 2 on which the light emitting element is arranged and side portions of the carrier 2 forming the cavity 5 are formed as an integral part . It is however also conceivable , that the side portions of the carrier 2 forming the cavity 5 are in form of a separate frame being attached to the carrier 2 .
  • the cover element 7 is formed by a flat transparent pane being attached to an upper end of the cavity 5 by use of the interface layer 4 , wherein the interface layer 4 comprises the adhesive layer 4 . 1 and the shielding layer 4 . 2 .
  • the shielding layer 4 . 2 covers in the embodiment shown not only the surface side of the adhesive layer 4 . 1 facing the cover element 7 but also a side surface of the adhesive layer 4 . 1 , in particular the one facing the cavity 5 .
  • the portion of the shielding layer 4 . 2 being arranged between the adhesive layer 4 . 1 and the cover element 7 thereby shields the adhesive layer 4 . 1 from radiation traveling through the cover element 7 due to TIR effects .
  • Figs . 3 and 4 show embodiments in which the cover element 7 and the carrier 2 each comprise steps in a region facing each other , wherein the steps are formed in such a way, that they each form a counterpart of the steps and interlock with each other with the interface layer 4 being arranged in between .
  • the interface layer 4 comprises a labyrinth structure .
  • light emitted from the light emitter 3 impinging on the interface layer 4 and in particular on the adhesive layer 4 . 1 is hindered from traveling throughout the whole adhesive layer 4 . 1 .
  • Due to the steps and in particular due to the kinks of the interface layer 4 and in particular of the adhesive layer 4 . 1 light which is traveling through a first portion of the adhesive layer 4 .
  • the steps of the carrier 2 and the cover element 7 are thereby each formed by two substantially parallel spaced-apart surfaces and a further surface connecting the two parallel surfaces .
  • the interface layer covers all surfaces of the steps , and in particular all surfaces of the cover element 7 and the carrier being in close proximity .
  • the interface layer "only" covers one of the parallel surfaces and the further surface connecting the two parallel surfaces of each of the carrier 2 and the cover element 7 .
  • Figs . 5 and 6 show embodiments in which the cover element 7 and not the carrier 2 comprises a cavity 6 .
  • the light emitting element 2 comprises contact pads on two opposing sides of the light emitting element 3 , one of which is coupled to the first contact via 2 . 1 using a bond wire 12 .
  • This is however only exemplarily and such a light emitting element can be used in any of the other described embodiments as well .
  • a flip chip light emitting element as shown in the aforementioned figures can be used in these embodiments too .
  • the carrier 2 comprises a step in a region facing the cover element , wherein the step is formed in such a way, that it forms a counterpart to the cover element 7 and interlocks with the same with the interface layer 4 being arranged in between .
  • each the cover element 7 and the carrier 2 comprise a step in a region facing each other . The steps are thereby again formed in such a way, that they each form a counterpart of the opposing step and interlock with each other with the interface layer 4 being arranged in between .
  • the size , position and angle of the steps , as well as the number of steps leading to a higher number of kinks in the interface layer is thereby for all embodiments exemplarily and can be varied in any way .
  • Figs . 7 and 8 show embodiments in which the light emitting element 3 is formed by a side emitting laser diode being arranged on a submount 8 and being coupled to the first and second contact via 2 . 1 , 2 . 2 via the submount 8 .
  • the carrier 2 and not the cover element 7 forms a cavity 5 in which the light emitting element 3 and the submount 8 are arranged .
  • the cavity comprises an opening, which, viewed in an emission direction L of the light emitting element 3 , is formed in the carrier 2 after the light emitting element 3 .
  • the opening is closed by the cover element 7 , with the interface layer 4 being arranged between the carrier 2 and the cover element 7 .
  • the cavity 5 is each closed by an opaque top cover 13 , which can for example comprise a metal or the like .
  • the top cover 13 can thereby be attached to the carrier 2 using an interface layer as described for the cover element 4 but can also be soldered or glued to the carrier 2 in any other way . It shall however be noted that for attaching the top cover 13 it should also be chosen an interface , which is protected from aging due to the light emitted by the light emitting element 3 .
  • the cover element 7 is formed by a flat transparent pane being attached to an outer side of the carrier 2 closing the opening by use of the interface layer 4 .
  • the interface layer 4 comprises the adhesive layer 4 . 1 and the shielding layer 4 . 2 .
  • the shielding layer 4 . 2 thereby covers the surface side of the adhesive layer 4 . 1 facing the cover element 7 .
  • the cover element 7 comprises a step in a region of the opening facing the carrier, wherein the step is formed in such a way, that it forms a counterpart to the opening of carrier and interlocks with the same with the interface layer 4 being arranged in between .
  • Figs. 9A to 91 show each in a side and an isometric view steps of a method for manufacturing an optoelectronic device 1 according to some aspects of the proposed principle.
  • a cover layer 7.1 is provided.
  • the cover layer 7.1 can for example be a glass pane.
  • a structured mask 14 is provided on both sides of the cover layer 7.1 comprising openings on form of a grid pattern to form a first and a second groove pattern 9, 11 in the cover layer 7.1 in a following step.
  • the structured mask can however also be provided on only one of the sides of the cover layer 7.1 such that only a first groove pattern 9 is created on one side of the cover layer 7.1.
  • a chemical spray 15 is applied onto the regions of the cover layer
  • the shielding material 4.2.1 is provided, and in particular dispensed, in the first groove pattern 9, the shielding material 4.2.1 being substantially opaque to light with a wavelength shorter than 550 nm.
  • the shielding material 4.2.1 can in particular be provided in the first grove pattern 9 such that a bottom surface and at least portions of side surfaces of the grooves of the first groove pattern 9 are covered with the shielding material 4.2.1.
  • an adhesive material 4.1.1 can also be provided in the first groove pattern 9 by dispensing covering the shielding material 4.2.1.
  • the adhesive material 4.1.1 can however also be provided directly on subassemblies 10 (shown in Fig. 9G) , which are in a later step attached to the cover layer 7.1.
  • the subassemblies 10 comprise a carrier 2 with a first and a second contact via 2.1, 2.2 extending through the carrier 2, and a light emitting element 3 arranged on the carrier, the light emitting element 3 being configured to emit light with a wavelength shorter than 550 nm and being electrically coupled to the first and second contact via 2.1, 2.2.
  • the subassemblies 10 are attached to the cover layer 7.1, such that the light emitting elements 3 each face the cover layer 7.1 and such that the shielding material 4.2.1 together with the adhesive material 4.1.1 forms an interface layer in the groves of the first groove pattern 9 between the cover layer 7.1 and the carrier 2.
  • optoelectronic devices 1 are then separated by breaking or sawing the array of subassemblies 10 arranged on the cover layer 7.1 along the grooves of the first groove pattern 9.
  • the grooves of the second groove pattern 11 thereby serve to provide predetermined breaking point/edges, along which the optoelectronic devices 1 can easily be separated.

Abstract

The disclosure relates to an optoelectronic device (1) comprising a carrier (2) with at least a first and a second contact via (2.1, 2.2) extending through the carrier (2), at least one light emitting element (3) arranged on the carrier (2), being configured to emit light with a wavelength shorter than 550 nm and being electrically coupled to the first and second contact via (2.1, 2.2), and a cover element (7) which is substantially transparent to the light emitted by the light emitting element (3) and which, viewed in an emission direction (L) of the light emitting element (3), is arranged after the light emitting element (3) on the carrier (2). The optoelectronic device (1) further comprises an interface layer (4) arranged between the cover element (7) and the carrier (2), the interface layer (4) comprising an adhesive layer (4.1) and a shielding layer (4.2), and the shielding layer (4.2) being substantially opaque to the light emitted by the light emitting element (3) and being arranged between the adhesive layer (4.1) and the cover element (7).

Description

OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING AN OPTOE -
LECTRONIC DEVICE
The present application claims priority from German patent application DE 10 2022 112 417 . 7 filed on May 18 , 2022 , the disclosure of which is incorporated by way for reference in its entirety .
The present invention relates to an optoelectronic device , as well as a method for manufacturing an optoelectronic device .
BACKGROUND
To improve ageing behaviour , conventional laser packages , especially laser packages emitting blue and/or ultraviolet light , require a hermetically sealed housing with an optical window . One of the reasons for this is that laser diodes , and in particular laser diodes for the emission of blue and/or ultraviolet light , degrade in contact with oxygen and their performance thus decreases over time .
To hermetically seal the housing and to allow radiation generated in the laser packages to leave the package , an optical window is attached to the housing . An interface between the housing and the window, to fix the window to the housing can for example be realized by an organic material ( glue ) . During use of the laser package , the glue interface may however be exposed to radiation, in particular to ultraviolet radiation (UVC ) generated within the laser package . Depending on radiation intensity, wave-length exposure time and temperature the glue interface might thereby be depredated . Resulting degradation effects may lead to leakage , delamination and in worst case to a detachment of the entire window .
However , commonly used glues which are robust to UVC radiation, and which could be used for the interface between the housing and the window, either involve high cost or are causing other issues such as weak interfacial adhesion, outgas-sing, or material incompatibility .
It is therefore an obj ect of the present application to counteract at least one of the aforementioned problems and to provide an improved optoelectronic device with a robust and durable window attach and a prevention of degradation of the interface by light exposure , as well as a method for its manufacture .
SUMMARY OF THE INVENTION
This and other obj ects are met by an optoelectronic device having the features of claim 1 and a method for manufacturing an optoelectronic device having the features of claim 10 . Embodiments and further developments of the invention are described in the dependent claims .
An optoelectronic device according to the invention comprises a carrier and at least one light emitting element arranged on the carrier , wherein the at least one light emitting element is configured to emit light with a wavelength shorter than 550 nm, and in particular with a wavelength in the range between 250 nm and 550 nm . The light emitting element can for example , be configured to emit short-wave laser light in the blue and/or ultraviolet range .
The optoelectronic device further comprises a cover element being substantially transparent to the light emitted by the light emitting element , and which, viewed in an emission direction of the light emitting element , is arranged after the light emitting element on the carrier . The cover element is attached to the carrier by use of an interface layer , such that the interface layer is arranged between the cover element and the carrier . The interface layer comprises an adhesive layer and a shielding layer , wherein the shielding layer is substantially opaque/intransparent to the light emitted by the light emitting element and is arranged between the adhesive layer and the cover element . The adhesive layer can for example be realized by an organic material ( glue ) .
By attaching the cover element to the carrier by use of the interface layer , the interface layer comprising the adhesive layer and the shielding layer , an exposure of the adhesive layer to light emitted by the at least one light emitting element , and in particular to light emitted by the at least one light emitting element and being reflected within the optoelectronic device can at least be reduced . In this way, the ageing behaviour of the adhesive layer, and coming with this the ageing behaviour of the light emitting element , can be improved .
During use of a conventional laser package without a shielding element within the interface between the carrier and the cover element , the interface layer and in particular the adhesive layer is on the one hand directly be exposed to radiation emitted by the at least one light emitting element possibly leading to an exposure of the whole adhesive layer by waveguide effects within the interface layer , and is on the other hand for example be exposed to light emitted by the at least one light emitting element through total internal reflection ( TIR) effects within the cover element .
To reduce this light exposure of at least the adhesive layer due to the TIR effects within the cover element in a first step , the shielding layer is introduced into the interface layer being opaque to the light emitted by the light emitting element . The shielding layer is thereby arranged between the adhesive layer and the cover element . The shielding layer thus prevents , radiation traveling within the cover element and possibly outcou- pling into the interface layer, from impinging into the adhesive layer . To reduce light exposure of at least the adhesive layer due to direct exposure of the interface layer and waveguide effects within the interface layer , the interface layer may comprise a labyrinth structure . By this , light emitted from the at least one light emitter impinging on the interface layer and in particular the adhesive layer is prevented from traveling throughout the whole interface layer due to waveguide effects . The interface layer can therefore for example comprise a step or a kink such that light traveling through a first portion of the interface layer is hindered from traveling further into a second portion which is tilted with a sufficiently large angle with respect to the first portion . By this at least in the second portion of the interface layer the ageing behaviour is improved and the risk of leakage , delamination and in worst case to a detachment of the cover element is reduced .
The proposed optoelectronic device has the advantage that a hermetically sealed housing for a light emitting element configured to emit light with a wavelength shorter than 550 nm is provided with a reduced ris k of leakage , delamination and in worst case to a detachment of the cover element is reduced due to aging effects .
An optoelectronic device according to the invention comprises a carrier with at least a first and a second contact via extending through the carrier, at least one light emitting element arranged on the carrier , a cover element and an interface layer arranged between the cover element and the carrier . The light emitting element is configured to emit light with a wavelength shorter than 550 nm and is electrically coupled to the first and second contact via . The cover element is substantially transparent to the light emitted by the light emitting element and is , viewed in an emission direction of the light emitting element , arranged after the light emitting element on the carrier . The interface layer being arranged between the cover element and the carrier comprises an adhesive layer and a shielding layer , wherein the shielding layer is substantially opaque to the light emitted by the light emitting element and is arranged between the adhesive layer and the cover element .
In some embodiments , the cover element and/or the carrier comprises at least one step along which the interface layer extends . The at least one step can for each or both of the cover element and the carrier is formed in some instances by two substantially parallel spaced-apart surfaces and a further surface connecting the two parallel surfaces . The interface layer may then extend at least along one of the two parallel surfaces and along the further surface connecting the two parallel surfaces thus also forming a step .
In some embodiments , the cover element and the carrier may for example each comprise a step, wherein the two steps are formed in such a way, that they each form a counterpart of the other step and interlock with each other with the interface layer being arranged in between . It can however also be conceivable that only one of the cover element and the carrier comprises a step and that the two elements fit together such that they interlock with each other with the interface layer being arranged in between . Each or one of the cover element and the carrier may also comprise several steps , wherein the two elements are formed in such a way that they form a counterpart of the other and interlock with each other with the interface layer being arranged in between . This can in particular lead to an interface comprising a labyrinth structure when extending along the steps .
In some embodiments , at least one of the adhesive layer and the shielding layer comprises at least one step in particular such that a light propagation of light emitted by the light emitting element along the adhesive layer is interrupted . Such a design can for example be caused by the cover element and/or the carrier comprising at least one step along which the interface layer extends . In particular , the adhesive layer can for example comprise a step or a kink such that light traveling through a first portion of the adhesive layer is blocked from traveling further into a second portion which is tilted with a sufficiently large angle with respect to the first portion .
In some embodiments , the shielding layer covers at least a first and a second surface side of the adhesive layer . The shielding layer may for example cover surface sides of the adhesive layer being potentially exposed to direct emission of light of the at least one light emitting element and/or being potentially exposed to light emitted from the at least one light emitting element and being reflected within the optoelectronic device . The first and the second surface side of the adhesive layer can for example be in particular substantially perpendicular to each other .
In some embodiments , the carrier forms a first cavity, on a bottom surface of which the at least one light emitting element is arranged . The first cavity can then be covered by the cover element enclosing the at least one light emitting element within the first cavity . A possible step in the carrier can in particular be formed in an upper portion of the carrier framing the cavity and facing the cover element . In addition, or as an alternative , the cover element can form a second cavity in which the light emitting element is arranged/enclosed .
In case of the carrier forming a first cavity, the cover element may completely cover the cavity as seen in plan view, and in particular at least partially protrude a frame formed by the carrier . Accordingly, the cover element may have a proj ected area, as seen in plan view, that is at least greater than a proj ected area of the cavity or the area enclosed by the frame . For example , when viewed from above , the cover element may have a proj ected area substantially equal in size to a proj ected area of an outer edge of the frame formed by the carrier . In some embodiments , the at least one light emitting element is formed by surface emitting laser diode configured to emit light with a wavelength shorter than 550 nm and in particular with a wavelength in the range between 250 nm and 550 nm . The light emitting element can for example , be configured to emit shortwave laser light in the blue and/or ultraviolet range .
In some embodiments , the at least one light emitting element is formed by a side emitting laser diode . In particular, the light emitting element is formed in the form of a side-emitting laser diode and has a light emitting region on one of the side surfaces of the laser diode through which the laser diode emits light in the form of a light cone in the emission direction .
In some embodiments , the optoelectronic device further comprises a submount arranged between the light emitting element and the carrier . The submount can in case of the at least one light emitting element being formed by a side emitting laser diode serve as a raise to prevent a so-called beam clipping of the light cone emitted by the laser diode in the emission direction .
In some embodiments , the adhesive layer comprises scattering particles and/or comprises a material substantially opaque to the radiation emitted by the at least one light emitting element . Due to this , a light propagation within the adhesive layer due to waveguide effects can further be reduced .
In some embodiments , the shielding layer comprises a material that is opaque to the radiation emitted by the at least one light emitting element and can thus form an optical barrier for the radiation emitted by the at least one light emitting element . The shielding layer can therefore for example comprise a metal and/or light absorbing particles .
In some embodiments , the material of the cover element is selected from the group of epoxies or glasses . In particular, the material of the cover element is characterised by substantially not absorbing or only barely absorbing light with a wavelength shorter than 550 nm, and in particular with a wavelength in the range between 250 nm to 550 nm. In some embodiments , the cover element is formed by a lens or other beam-shaping element . This allows beam shaping, or light scattering, of the light emitted by the optoelectronic device .
In some embodiments , the optoelectronic device comprises electrical contact surfaces on a surface side of the carrier facing away from the at least one light emitting element , making it surface mountable .
A method according to the invention for manufacturing at least one optoelectronic device , in particular an optoelectronic device according to some of the aforementioned aspects , comprises the steps :
Providing a cover layer , in particular of a material substantially transparent to light with a wavelength shorter than 550 nm;
Creating at least a first groove pattern on a first surface side of the cover layer;
Applying a shielding material in the first groove pattern, the shielding material being substantially opaque to light with a wavelength shorter than 550 nm;
Providing at least one subassembly comprising a carrier with a first and a second contact via extending through the carrier , and a light emitting element arranged on the carrier , the light emitting element being configured to emit light with a wavelength shorter than 550 nm and being electrically coupled to the first and second contact via ; and
Attaching the at least one subassembly to the cover layer, such that the light emitting element faces the cover layer and such that the shielding material together with an adhesive forms an interface layer between the cover layer and the carrier, the shielding material being arranged between the adhesive and the cover layer .
In some embodiments , the step of applying the shielding material comprises dispensing the shielding material into the first groove pattern, such that a bottom surface and at least portions of side surfaces of the grooves of the first groove pattern are covered with the shielding material .
In some embodiments , the step of attaching the at least one subassembly to the cover layer comprises applying an adhesive material into the first groove pattern on the shielding mate- rial .
In some embodiments , further comprising a step of creating a second groove pattern on a second surface side of the cover layer opposite the first surface side , the first and the second groove pattern in particular being aligned with each other .
In some embodiments , the method further comprises a step of separating a plurality of optoelectronic devices along grooves of the first groove pattern in particular by breaking them off of each other . Therefore , a plurality of subassemblies can be attached to the to the cover layer each one of the subassemblies being surrounded by grooves of the first groove pattern .
Brief description of the drawings
In the following , embodiments of the invention are explained in more detail with reference to the accompanying drawings . They show, schematically in each case ,
Fig . 1 a sectional view of a hermetically sealed laser package ; Fig . 2 to 8 each a sectional view of an embodiment of an optoelectronic device according to some aspects of the proposed principle ; and
Fig . 9A to 91 steps of a method for manufacturing an optoelectronic device according to some aspects of the proposed principle .
Detailed description
The following embodiments and examples show various aspects and their combinations according to the proposed principle . The embodiments and examples are not always to scale . Likewise , various elements may be shown enlarged or reduced in size to highlight individual aspects . It is understood that the individual aspects and features of the embodiments and examples shown in the figures may be readily combined with each other without affecting the principle of the invention . Some aspects have a regular structure or shape . It should be noted that minor deviations from the ideal shape may occur in practice , but without contradicting the inventive idea .
In addition, the individual figures , features and aspects are not necessarily shown in the correct size , nor do the proportions between the individual elements have to be fundamentally correct . Some aspects and features are emphasised by showing them enlarged . However, terms such as "above" , "above" , "below" , "below" , "larger" , "smaller" and the like are correctly represented in relation to the elements in the figures . Thus , it is possible to derive such relationships between the elements from the figures .
Figure 1 shows a sectional view of a hermetically sealed laser package comprising a carrier 2 with a first and a second contact via 2 . 1 , 2 . 2 extending through the carrier 2 . The laser package further comprises a light emitting element 3 arranged on the carrier 2 and being coupled to the first and second contact via 2 . 1 , 2 . 2 . The laser package is hermetically sealed using a cover element 7 which, viewed in an emission direction L of the light emitting element 3 , is arranged after the light emitting element 3 on the carrier 2 and which is attached to the carrier 2 by use of an adhesive layer 4 . 1 . The cover element 7 is transparent to the light emitted from the light emitting element 3 .
The small arrows in the figure indicate possible light paths of the light emitted by the light emitting element 3 . The small arrows particularly indicate light paths of light exposing the adhesive layer 4 . 1 possibly causing ageing effects in the adhesive layer 4 . 1 . During use of the laser package the adhesive layer 4 . 1 can on the one hand for example directly be exposed to radiation emitted by the light emitting element 3 possibly leading to an exposure of the whole adhesive layer 4 . 1 by waveguide effects within the adhesive layer ( shown in the zoomed in detailed view) . On the other hand, the adhesive layer 4 . 1 can for example be exposed to light emitted by the light emitting element 3 through TIR effects within the cover element 7 .
Figures 2 to 8 show embodiments of an optoelectronic device 1 in which the risk of aging effects of the adhesive layer 4 . 1 is reduced compared to the laser package shown in Figure 1 .
The optoelectronic devices 1 each comprise a carrier 2 with a first and a second contact via 2 . 1 , 2 . 2 extending through the carrier 2 . The optoelectronic devices 1 further comprise each a light emitting element 3 arranged on the carrier 2 being coupled to the first and second contact via 2 . 1 , 2 . 2 . The optoelectronic devices 1 are hermetically sealed using a cover element 7 which, viewed in an emission direction L of the light emitting element 3 , is arranged after the light emitting element 3 on the carrier 2 and which is attached to the carrier 2 by use of an interface layer 4 . The light emitting element 3 is each configured to emit light with a wavelength shorter than 550 nm and the cover element 7 is transparent to the light emitted from the light emitting element 3 . The material of the cover element 7 can in particular be selected from the group of epoxies or glasses .
The interface layer 4 comprises an adhesive layer 4 . 1 and a shielding layer 4 . 2 , wherein the shielding layer 4 . 2 is opaque to the light emitted by the light emitting element 3 and is arranged between the adhesive layer 4 . 1 and the cover element 7 . The shielding layer 4 . 2 in particular covers the adhesive layer 4 . 1 , at least the surface ( s ) of the adhesive layer 4 . 1 facing the cover element 7 . The shielding layer 4 . 2 thus covers the adhesive layer 4 . 1 particularly from light emitted by the light emitting element 3 and impinging onto the interface layer through TIR effects within the cover element 7 .
The carrier 2 shown in Fig . 2 comprises a cavity 5 in which the light emitting element 3 is arranged . In the embodiment shown the bottom portion of the carrier 2 on which the light emitting element is arranged and side portions of the carrier 2 forming the cavity 5 are formed as an integral part . It is however also conceivable , that the side portions of the carrier 2 forming the cavity 5 are in form of a separate frame being attached to the carrier 2 .
In the embodiment shown, the cover element 7 is formed by a flat transparent pane being attached to an upper end of the cavity 5 by use of the interface layer 4 , wherein the interface layer 4 comprises the adhesive layer 4 . 1 and the shielding layer 4 . 2 . The shielding layer 4 . 2 covers in the embodiment shown not only the surface side of the adhesive layer 4 . 1 facing the cover element 7 but also a side surface of the adhesive layer 4 . 1 , in particular the one facing the cavity 5 . The portion of the shielding layer 4 . 2 being arranged between the adhesive layer 4 . 1 and the cover element 7 thereby shields the adhesive layer 4 . 1 from radiation traveling through the cover element 7 due to TIR effects . The portion of the shielding layer 4 . 2 being arranged on the second surface side of the adhesive layer 4 . 1 facing the cavity 5 shields the adhesive layer 4 . 1 on the other hand from radiation emitted directly into the direction of the adhesive layer and thus hinders the radiation from traveling through the whole adhesive layer 4 . 1 due to waveguide effects .
Figs . 3 and 4 show embodiments in which the cover element 7 and the carrier 2 each comprise steps in a region facing each other , wherein the steps are formed in such a way, that they each form a counterpart of the steps and interlock with each other with the interface layer 4 being arranged in between . Due to the steps , the interface layer 4 comprises a labyrinth structure . By this , light emitted from the light emitter 3 impinging on the interface layer 4 and in particular on the adhesive layer 4 . 1 is hindered from traveling throughout the whole adhesive layer 4 . 1 . Due to the steps and in particular due to the kinks of the interface layer 4 and in particular of the adhesive layer 4 . 1 , light which is traveling through a first portion of the adhesive layer 4 . 1 is hindered from traveling further to a second portion which is tilted with a sufficiently large angle with respect to the first portion . By this at least in the second portion of the adhesive layer 4 . 1 the ageing behaviour can be improved and the risk of leakage , delamination and in worst case to a detachment of the cover element 7 can be reduced .
The steps of the carrier 2 and the cover element 7 are thereby each formed by two substantially parallel spaced-apart surfaces and a further surface connecting the two parallel surfaces . As shown in Fig . 3 the interface layer covers all surfaces of the steps , and in particular all surfaces of the cover element 7 and the carrier being in close proximity . As shown in Fig . 4 , the interface layer "only" covers one of the parallel surfaces and the further surface connecting the two parallel surfaces of each of the carrier 2 and the cover element 7 .
Due to the kinks , light impinging onto uncovered portions of the adhesive layer 4 . 1 is however hindered from traveling throughout the whole adhesive layer . This is exemplarily shown in the zoomed in detailed view of Fig . 3 in which due to the kinks in combination with the shielding layer 4 . 2 the shielded area 17 results , in which in which the adhesive layer 4 . 1 is protected from the radiation emitted by the light emitting element 3 .
Figs . 5 and 6 show embodiments in which the cover element 7 and not the carrier 2 comprises a cavity 6 . In addition, the light emitting element 2 comprises contact pads on two opposing sides of the light emitting element 3 , one of which is coupled to the first contact via 2 . 1 using a bond wire 12 . This is however only exemplarily and such a light emitting element can be used in any of the other described embodiments as well . At the same time a flip chip light emitting element as shown in the aforementioned figures can be used in these embodiments too .
In the embodiment shown in Fig . 5 , only the carrier 2 comprises a step in a region facing the cover element , wherein the step is formed in such a way, that it forms a counterpart to the cover element 7 and interlocks with the same with the interface layer 4 being arranged in between . In the embodiment shown in Fig . 6 each the cover element 7 and the carrier 2 comprise a step in a region facing each other . The steps are thereby again formed in such a way, that they each form a counterpart of the opposing step and interlock with each other with the interface layer 4 being arranged in between .
The size , position and angle of the steps , as well as the number of steps leading to a higher number of kinks in the interface layer is thereby for all embodiments exemplarily and can be varied in any way .
Figs . 7 and 8 show embodiments in which the light emitting element 3 is formed by a side emitting laser diode being arranged on a submount 8 and being coupled to the first and second contact via 2 . 1 , 2 . 2 via the submount 8 . Again, the carrier 2 and not the cover element 7 forms a cavity 5 in which the light emitting element 3 and the submount 8 are arranged . The cavity comprises an opening, which, viewed in an emission direction L of the light emitting element 3 , is formed in the carrier 2 after the light emitting element 3 . The opening is closed by the cover element 7 , with the interface layer 4 being arranged between the carrier 2 and the cover element 7 .
The cavity 5 is each closed by an opaque top cover 13 , which can for example comprise a metal or the like . The top cover 13 can thereby be attached to the carrier 2 using an interface layer as described for the cover element 4 but can also be soldered or glued to the carrier 2 in any other way . It shall however be noted that for attaching the top cover 13 it should also be chosen an interface , which is protected from aging due to the light emitted by the light emitting element 3 .
As shown in Fig . 7 , the cover element 7 is formed by a flat transparent pane being attached to an outer side of the carrier 2 closing the opening by use of the interface layer 4 . The interface layer 4 comprises the adhesive layer 4 . 1 and the shielding layer 4 . 2 . The shielding layer 4 . 2 thereby covers the surface side of the adhesive layer 4 . 1 facing the cover element 7 . As shown in Fig . 8 , the cover element 7 comprises a step in a region of the opening facing the carrier, wherein the step is formed in such a way, that it forms a counterpart to the opening of carrier and interlocks with the same with the interface layer 4 being arranged in between . Figs. 9A to 91 show each in a side and an isometric view steps of a method for manufacturing an optoelectronic device 1 according to some aspects of the proposed principle.
In a first step, shown in Fig. 9A, a cover layer 7.1 is provided. The cover layer 7.1 can for example be a glass pane. In a second step, as shown in Fig. 9B, a structured mask 14 is provided on both sides of the cover layer 7.1 comprising openings on form of a grid pattern to form a first and a second groove pattern 9, 11 in the cover layer 7.1 in a following step. The structured mask can however also be provided on only one of the sides of the cover layer 7.1 such that only a first groove pattern 9 is created on one side of the cover layer 7.1.
For creating the first and a second groove pattern 9, 11 a chemical spray 15 is applied onto the regions of the cover layer
7.1 which are not covered by the structured mask 14, as shown in Fig. 9C . The chemical spray 15 in contact with the cover layer 7.1 etches grooves into the cover layer 7.1 resulting in the first and second groove pattern 9, 11 due to the structured mask 15 protecting regions of the cover layer 7.1 from the chemical spray 15. After the step of etching the first and second groove pattern 9, 11, the structured mask 15 is removed as shown in Fig. 9D, resulting in the cover layer 7.1 comprising the first and second groove pattern 9, 11, as shown in Fig. 9E.
In a following step, as shown in Fig. 9F, a shielding material
4.2.1 is provided, and in particular dispensed, in the first groove pattern 9, the shielding material 4.2.1 being substantially opaque to light with a wavelength shorter than 550 nm. The shielding material 4.2.1 can in particular be provided in the first grove pattern 9 such that a bottom surface and at least portions of side surfaces of the grooves of the first groove pattern 9 are covered with the shielding material 4.2.1. After providing the shielding material 4.2.1 in the first groove pattern 9 an adhesive material 4.1.1 can also be provided in the first groove pattern 9 by dispensing covering the shielding material 4.2.1. The adhesive material 4.1.1 can however also be provided directly on subassemblies 10 (shown in Fig. 9G) , which are in a later step attached to the cover layer 7.1.
The subassemblies 10 comprise a carrier 2 with a first and a second contact via 2.1, 2.2 extending through the carrier 2, and a light emitting element 3 arranged on the carrier, the light emitting element 3 being configured to emit light with a wavelength shorter than 550 nm and being electrically coupled to the first and second contact via 2.1, 2.2.
In a following step, as shown in Fig. 9H, the subassemblies 10 are attached to the cover layer 7.1, such that the light emitting elements 3 each face the cover layer 7.1 and such that the shielding material 4.2.1 together with the adhesive material 4.1.1 forms an interface layer in the groves of the first groove pattern 9 between the cover layer 7.1 and the carrier 2.
As shown in Fig. 91, optoelectronic devices 1 are then separated by breaking or sawing the array of subassemblies 10 arranged on the cover layer 7.1 along the grooves of the first groove pattern 9. The grooves of the second groove pattern 11 thereby serve to provide predetermined breaking point/edges, along which the optoelectronic devices 1 can easily be separated.
REFERENCE LIST
1 optoelectronic device
2 carrier
2.1 first contact via
2.2 second contact via
3 light emitting element
4 interface layer
4.1 adhesive layer
4.1.1 adhesive
4.2 shielding layer
4.2.1 shielding material
5 first cavity
6 second cavity
7 cover element
7.1 cover layer
8 submount
9 first groove pattern
10 subassembly
11 second groove pattern
12 wire bond
13 top cover
14 structured mask
15 chemical spray
16 unshielded area
17 shielded area
L emission direction

Claims

CLAIMS An optoelectronic device (1) comprising: a carrier ( 2 ) ; at least a first and a second contact via (2.1, 2.2) extending through the carrier (2) ; at least one light emitting element (3) arranged on the carrier (2) , the light emitting element (3) being configured to emit light with a wavelength shorter than 550 nm and being electrically coupled to the first and second contact via (2.1, 2.2) ; a cover element (7) which is substantially transparent to the light emitted by the light emitting element (3) and which, viewed in an emission direction (L) of the light emitting element (3) , is arranged after the light emitting element (3) on the carrier (2) ; and an interface layer (4) arranged between the cover element (7) and the carrier (2) , the interface layer (4) comprising an adhesive layer (4.1) and a shielding layer (4.2) ; wherein the shielding layer (4.2) is substantially opaque to the light emitted by the light emitting element (3) and is arranged between the adhesive layer (4.1) and the cover element (7) ; wherein the cover element (7) and the carrier (2) comprises at least one step formed in such a way, that they form a counterpart to each other and interlock with each other with the interface layer (4) being arranged in between . The optoelectronic device according to claim 1, wherein the at least one step is formed by two substantially parallel spaced-apart surfaces and a further surface connecting the two parallel surfaces, and wherein the interface layer (4) extends at least along one of the two parallel surfaces and along the further surface connecting the two parallel surfaces. The optoelectronic device according to claim 1 or 2 , wherein at least one of the adhesive layer (4.1) and the shielding layer (4.2) comprises at least one step in particular such that propagation of light emitted by the light emitting element (3) along the adhesive layer (4.1) is interrupted. The optoelectronic device according to any one of the preceding claims, wherein the shielding layer (4.2) covers at least a first and a second surface side of the adhesive layer (4.1) , the first and the second surface side being in particular substantially perpendicular to each other. The optoelectronic device according to any one of the preceding claims, wherein the carrier (2) forms a first cavity (5) , on a bottom surface of which the light emitting element (3) is arranged. The optoelectronic device according to any one of the preceding claims, wherein cover element (7) forms a second cavity (6) in which the light emitting element (3) is arranged. The optoelectronic device according to any one of the preceding claims, wherein the light emitting element (3) is formed by a side emitting laser diode. The optoelectronic device according to claim 7, Further comprising a submount (8) arranged between the light emitting element (3) and the carrier (2) . The optoelectronic device according to any one of the preceding claims, wherein the adhesive layer (4.1) comprises scattering particles.
Method for manufacturing at least one optoelectronic device (1) comprising the steps: providing a cover layer (7.1) , in particular of a material substantially transparent to light with a wavelength shorter than 550 nm; creating at least a first groove pattern (9) on a first surface side of the cover layer; applying a shielding material (4.2.1) in the first groove pattern (9) , the shielding material (4.2.1) being substantially opaque to light with a wavelength shorter than 550 nm;
Providing at least one subassembly (10) comprising a carrier (2) with a first and a second contact via (2.1, 2.2) extending through the carrier (2) , and a light emitting element (3) arranged on the carrier (2) , the light emitting element (3) being configured to emit light with a wavelength shorter than 550 nm and being electrically coupled to the first and second contact via (2.1, 2.2) ; and attaching the at least one subassembly (10) to the cover layer (7.1) , such that the light emitting element (3) faces the cover layer (7.1) and such that the shielding material (4.2.1) together with an adhesive (4.1.1) forms an interface layer (4) between the cover layer (7.1) and the carrier (2) , the shielding material being arranged between the adhesive and the cover layer (7.1) , wherein the cover layer (7.1) and the carrier (2) comprises at least one step formed in such a way, that they form a counterpart to each other and interlock with each other with the interface layer (4) being arranged in between . The method according to claim 10, wherein the step of applying the shielding material
(4.2.1) comprises dispensing the shielding material
(4.2.1) in the first groove pattern (9) , such that a bottom surface and at least portions of side surfaces of the grooves of the first groove pattern (9) are covered with the shielding material. The method according to claim 10 or 11, wherein the step of attaching the at least one subassembly (10) to the cover layer (7.1) comprises applying an adhesive material (4.1.1) in the first groove pattern (9) on the shielding material. The method according to any one of claims 10 to 12, further comprising a step of creating a second groove pattern (11) on a second surface side of the cover layer
(7.1) opposite the first surface side, the first and the second groove pattern (9, 11) in particular being aligned to each other. The method according to any one of claims 10 to 13, further comprising a step of separating a plurality of optoelectronic devices (1) along the first groove pattern (9) .
PCT/EP2023/062460 2022-05-18 2023-05-10 Optoelectronic device and method for manufacturing an optoelectronic device WO2023222483A1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3001466A1 (en) * 2013-05-23 2016-03-30 LG Innotek Co., Ltd. Light-emitting module
EP3038173A1 (en) * 2014-12-23 2016-06-29 LG Innotek Co., Ltd. Light emitting device and lighting system
US20170162767A1 (en) * 2015-12-04 2017-06-08 Industrial Technology Research Institute Package structure of an ultraviolet light emitting diode
EP3291386A1 (en) * 2016-08-30 2018-03-07 Nichia Corporation Light emitting device
DE112017007401T5 (en) * 2017-04-06 2019-12-19 Ngk Insulators, Ltd. OPTICAL COMPONENT AND TRANSPARENT BODY
US20210376562A1 (en) * 2018-10-17 2021-12-02 Osram Opto Semiconductors Gmbh Laser device and method for manufacturing a laser device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3001466A1 (en) * 2013-05-23 2016-03-30 LG Innotek Co., Ltd. Light-emitting module
EP3038173A1 (en) * 2014-12-23 2016-06-29 LG Innotek Co., Ltd. Light emitting device and lighting system
US20170162767A1 (en) * 2015-12-04 2017-06-08 Industrial Technology Research Institute Package structure of an ultraviolet light emitting diode
EP3291386A1 (en) * 2016-08-30 2018-03-07 Nichia Corporation Light emitting device
DE112017007401T5 (en) * 2017-04-06 2019-12-19 Ngk Insulators, Ltd. OPTICAL COMPONENT AND TRANSPARENT BODY
US20210376562A1 (en) * 2018-10-17 2021-12-02 Osram Opto Semiconductors Gmbh Laser device and method for manufacturing a laser device

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