WO2023211729A1 - Compensation automatique d'espace au moyen d'une source de lumière et d'un capteur pour systèmes de traitement de substrat - Google Patents
Compensation automatique d'espace au moyen d'une source de lumière et d'un capteur pour systèmes de traitement de substrat Download PDFInfo
- Publication number
- WO2023211729A1 WO2023211729A1 PCT/US2023/019064 US2023019064W WO2023211729A1 WO 2023211729 A1 WO2023211729 A1 WO 2023211729A1 US 2023019064 W US2023019064 W US 2023019064W WO 2023211729 A1 WO2023211729 A1 WO 2023211729A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gap
- substrate
- plasma
- light
- sampling intervals
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 148
- 238000012545 processing Methods 0.000 title claims abstract description 97
- 238000005259 measurement Methods 0.000 claims abstract description 49
- 238000005070 sampling Methods 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims description 77
- 238000009826 distribution Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 39
- 230000008569 process Effects 0.000 description 29
- 230000006870 function Effects 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 239000002826 coolant Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000007620 mathematical function Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 241001527806 Iti Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003442 weekly effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32926—Software, data control or modelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Système de compensation automatique d'un espace entre un substrat agencé sur un support de substrat dans une chambre de traitement et un composant dans la chambre de traitement. Le système comporte une source de lumière configurée pour transmettre de la lumière en direction de l'espace pendant le traitement du substrat. Un capteur de lumière est configuré pour recevoir une partie de la lumière et pour générer un signal de mesure sur la base d'une caractéristique mesurée de la partie de la lumière. Un actionneur est configuré pour régler une hauteur du support de substrat et/ou du composant. Un dispositif de commande comporte un module de compensation d'espace configuré pour amener la source de lumière à transmettre la lumière pendant une pluralité d'intervalles d'échantillonnage, pour recevoir une pluralité de signaux de mesure et pour régler sélectivement l'espace sur la base d'un espace prédéterminé et d'une mesure d'espace.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263336821P | 2022-04-29 | 2022-04-29 | |
| US63/336,821 | 2022-04-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2023211729A1 true WO2023211729A1 (fr) | 2023-11-02 |
Family
ID=88519541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2023/019064 WO2023211729A1 (fr) | 2022-04-29 | 2023-04-19 | Compensation automatique d'espace au moyen d'une source de lumière et d'un capteur pour systèmes de traitement de substrat |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2023211729A1 (fr) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110049100A1 (en) * | 2008-01-16 | 2011-03-03 | Charm Engineering Co., Ltd. | Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same |
| US20160215396A1 (en) * | 2015-01-22 | 2016-07-28 | Applied Materials, Inc. | Intelligent Hardstop For Gap Detection And Control Mechanism |
| US20200217657A1 (en) * | 2019-01-03 | 2020-07-09 | Lam Research Corporation | Distance measurement between gas distribution device and substrate support at high temperatures |
| CN113035677A (zh) * | 2019-12-09 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | 等离子体处理设备以及等离子体处理方法 |
| WO2021195190A1 (fr) * | 2020-03-27 | 2021-09-30 | Lam Research Corporation | Surveillance in situ de l'épaisseur et de l'espacement d'une tranche à l'aide d'un capteur laser à faisceaux |
-
2023
- 2023-04-19 WO PCT/US2023/019064 patent/WO2023211729A1/fr unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110049100A1 (en) * | 2008-01-16 | 2011-03-03 | Charm Engineering Co., Ltd. | Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same |
| US20160215396A1 (en) * | 2015-01-22 | 2016-07-28 | Applied Materials, Inc. | Intelligent Hardstop For Gap Detection And Control Mechanism |
| US20200217657A1 (en) * | 2019-01-03 | 2020-07-09 | Lam Research Corporation | Distance measurement between gas distribution device and substrate support at high temperatures |
| CN113035677A (zh) * | 2019-12-09 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | 等离子体处理设备以及等离子体处理方法 |
| WO2021195190A1 (fr) * | 2020-03-27 | 2021-09-30 | Lam Research Corporation | Surveillance in situ de l'épaisseur et de l'espacement d'une tranche à l'aide d'un capteur laser à faisceaux |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102488729B1 (ko) | 이동 가능한 에지 링 및 가스 주입 조정을 사용하여 웨이퍼 상 cd 균일성의 제어 | |
| KR102382697B1 (ko) | Rf 전력에 기초하여 기판 지지부 피드-포워드 온도 제어를 위한 시스템 및 방법 | |
| US9922855B2 (en) | Method for reducing temperature transition in an electrostatic chuck | |
| US20190244793A1 (en) | Tapered upper electrode for uniformity control in plasma processing | |
| US11029668B2 (en) | Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values | |
| WO2018089776A1 (fr) | Procédé de centrage d'anneau de bord à l'aide de données d'alignement dynamique d'anneau | |
| US11028482B2 (en) | Use of voltage and current measurements to control dual zone ceramic pedestals | |
| US10381248B2 (en) | Auto-correction of electrostatic chuck temperature non-uniformity | |
| US11236422B2 (en) | Multi zone substrate support for ALD film property correction and tunability | |
| US20230083737A1 (en) | System, method, and user interface for edge ring wear compensation | |
| US10509425B2 (en) | Virtual metrology method for ESC temperature estimation using thermal control elements | |
| TWI816856B (zh) | 基板處理系統與用於操作基板處理系統的方法 | |
| WO2021195190A1 (fr) | Surveillance in situ de l'épaisseur et de l'espacement d'une tranche à l'aide d'un capteur laser à faisceaux | |
| WO2023211729A1 (fr) | Compensation automatique d'espace au moyen d'une source de lumière et d'un capteur pour systèmes de traitement de substrat | |
| US20210143037A1 (en) | Determining and controlling substrate temperature during substrate processing | |
| TW202416409A (zh) | 用於基板處理系統的使用光源及感測器之自動間隙補償 | |
| US20230369025A1 (en) | High precision edge ring centering for substrate processing systems | |
| WO2023003768A1 (fr) | Compensation de temps de dépôt fondée sur température de pomme d'arrosoir pour tendance d'épaisseur dans système de dépôt pecvd | |
| WO2021202136A1 (fr) | Jonc de bordure refroidi à joints intégrés |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 23797044 Country of ref document: EP Kind code of ref document: A1 |