WO2023206310A1 - 天线及电子设备 - Google Patents

天线及电子设备 Download PDF

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Publication number
WO2023206310A1
WO2023206310A1 PCT/CN2022/090104 CN2022090104W WO2023206310A1 WO 2023206310 A1 WO2023206310 A1 WO 2023206310A1 CN 2022090104 W CN2022090104 W CN 2022090104W WO 2023206310 A1 WO2023206310 A1 WO 2023206310A1
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WIPO (PCT)
Prior art keywords
layer
antenna
intersection point
substrate
antenna according
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PCT/CN2022/090104
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English (en)
French (fr)
Inventor
王熙元
曲峰
Original Assignee
京东方科技集团股份有限公司
北京京东方技术开发有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 京东方科技集团股份有限公司, 北京京东方技术开发有限公司 filed Critical 京东方科技集团股份有限公司
Priority to PCT/CN2022/090104 priority Critical patent/WO2023206310A1/zh
Priority to CN202280000968.7A priority patent/CN117321857A/zh
Publication of WO2023206310A1 publication Critical patent/WO2023206310A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
    • H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means

Definitions

  • the present disclosure belongs to the field of antenna technology, and specifically relates to an antenna and an electronic device.
  • the dielectric constant of the dielectric layer of the phase shifter in the antenna will change significantly with temperature changes, that is, an increase in temperature will cause the phase shift angle range of the phase shifter to decrease and the insertion loss to increase.
  • the reaction to the antenna will cause the antenna performance to deteriorate, such as side lobe elevation, main lobe reduction, beam pointing disorder, etc., which brings huge challenges to the simulation design and actual use of the antenna.
  • the present invention aims to solve at least one of the technical problems existing in the prior art and provide an antenna and an electronic device.
  • an embodiment of the present disclosure provides an antenna, which includes a feed layer, a phase adjustment layer and a radiation layer; wherein,
  • the feed layer is configured to transmit microwave signals to the phase adjustment layer
  • the phase adjustment layer is configured to phase shift the microwave signal according to a preset phase shift amount
  • the radiation layer is configured to radiate the microwave signal phase-shifted by the phase adjustment layer; the radiation layer includes at least one first radiation patch.
  • the first radiation patch includes a first side and a second side oppositely arranged along the first direction, and a third side and a fourth side oppositely arranged along the second direction; the first radiation patch further includes a third side. Five sides; the fifth side is connected to at least one of the following positions:
  • the extension line of the first side and the extension line of the third side is a first intersection point, and the distance from the first intersection point to the first end of the first side is equal to the distance from the first intersection point to the first end of the third side;
  • intersection point of the extension line of the first side and the extension line of the fourth side is a second intersection point, and The distance from the second intersection point to the second end of the first side is equal to the distance from the second intersection point to the first end of the fourth side;
  • intersection point of the extension line of the second side and the extension line of the third side is a third intersection point, and The distance from the third intersection point to the first end of the second side is equal to the distance from the third intersection point to the second end of the third side;
  • intersection point of the extension line of the second side and the extension line of the fourth side is a fourth intersection point, and The distance from the fourth intersection point to the second end of the second side is equal to the distance from the fourth intersection point to the second end of the fourth side.
  • the phase adjustment layer includes at least one phase shifter, a first transmission end of the phase shifter is electrically connected to a second feed port of the feed layer; The transmission end is electrically connected to one of the first radiation patches;
  • the radiation layer also includes a first dielectric substrate and at least one probe.
  • the first radiation layer is disposed on a side of the first dielectric substrate away from the phase adjustment layer; one of the probes is electrically connected to one of the The first radiation layer is directed by the probe through the first dielectric substrate to the second transmission end of the phase shifter.
  • the first radiation patch includes a first side and a second side oppositely arranged along the first direction, and a third side and a fourth side oppositely arranged along the second direction; the first side, the third side
  • the center of the virtual quadrilateral defined by the extension lines of the two sides, the third side, and the fourth side is the first center, and the connection node between the probe and the first radiation patch is the first node; There is a certain first distance between the first node and the first center.
  • the extending direction of the line connecting the first node and the first center is the second direction.
  • the antenna further includes a first reference electrode layer disposed between the first dielectric substrate and the phase adjustment layer; and the first reference electrode layer has a plurality of first openings, and the probe is connected to the phase adjustment layer. The first opening is provided accordingly.
  • the phase adjustment layer includes at least one phase shifter, and the phase shifter includes a first substrate, a second substrate arranged oppositely, and an adjustable dielectric arranged between the first substrate and the second substrate. layer; a temperature control unit layer is provided on a side of at least one of the first substrate and the second substrate away from the adjustable dielectric layer; the temperature control unit layer is configured to adjust the phase adjustment layer temperature to adjust the operating temperature of the antenna.
  • a plurality of flow channels are provided in the temperature control unit layer to accommodate the flow of working fluid.
  • the antenna further includes: a circulation device connected to the flow channel;
  • the circulation device includes a working fluid driving unit and a working fluid temperature control unit.
  • the working fluid driving unit is used to drive the flow of the working fluid
  • the working fluid temperature control unit is used to control the temperature of the working fluid.
  • the feed layer includes a waveguide power division feed network; the temperature control unit layer provided on the side of the first substrate away from the adjustable dielectric layer is provided on the same layer as the waveguide power division feed network, And the orthographic projection of the waveguide power division feeding network on the first dielectric substrate has no overlap.
  • the temperature control unit layer includes an electric heating piece and/or a semiconductor refrigeration piece.
  • At least part of the side of the first substrate and/or the second substrate of the phase shifter away from the adjustable dielectric layer is provided with a plurality of temperature measurement units for detecting the phase shifter. operating temperature.
  • the antenna includes a housing, and the housing includes at least a first side plate and a second side plate that are oppositely arranged; a first wind control device is provided on the first side, and a first wind control device is provided on the second side. A second wind control device is provided on the side plate; the first wind control device is configured to introduce air in the environment into the interior of the housing, and the second wind control device is configured to guide the housing Internal air is directed away from the housing.
  • the antenna includes a shell, and a temperature control layer is provided on the outer wall of the shell.
  • an embodiment of the present disclosure provides an electronic device, including any of the above antennas.
  • Figure 1 is a schematic structural diagram of an antenna according to an embodiment of the present disclosure.
  • Figure 2 is a top view of an inverted microstrip linear phase shifter.
  • Figure 3 is a cross-sectional view taken along line A-A' in Figure 2 .
  • Figure 4 is a schematic diagram of the waveguide power division feeding network 4 in the antenna according to the embodiment of the present disclosure.
  • Figure 5 is a schematic diagram of a combination of a radiation layer and a phase shifter according to an embodiment of the present disclosure.
  • FIG. 6 is a top view of a first radiation patch according to a first example of an embodiment of the present disclosure.
  • FIG. 7 is a top view of the first radiation patch according to the second example of the embodiment of the present disclosure.
  • FIG. 8 is a top view of a first radiation patch according to a third example of an embodiment of the present disclosure.
  • FIG. 9 is a top view of a first radiation patch according to a fourth example of an embodiment of the present disclosure.
  • FIG. 10 is a top view of a first radiation patch according to a fifth example of the embodiment of the present disclosure.
  • Figure 11 is a partial structural diagram of an antenna according to an embodiment of the present disclosure.
  • FIG. 12 is a schematic diagram of the connection position between the first radiation patch and the probe of the antenna of FIG. 11 .
  • FIG. 13 is a schematic structural diagram of a first example of an antenna according to an embodiment of the present disclosure.
  • FIG. 14 is a schematic structural diagram of a second example of an antenna according to an embodiment of the present disclosure.
  • FIG. 15 is a schematic structural diagram of a third example of an antenna according to an embodiment of the present disclosure.
  • FIG. 16 is a schematic structural diagram of a fourth example of an antenna according to an embodiment of the present disclosure.
  • FIG. 1 is a schematic structural diagram of an antenna according to an embodiment of the present disclosure; as shown in Figure 1, an embodiment of the present disclosure provides an antenna, which includes a feed layer 1, a phase adjustment layer 3 and a radiation layer 2 .
  • the feed layer 1 is configured to transmit the microwave signal to the phase adjustment layer;
  • the phase adjustment layer 3 is configured to phase shift the microwave signal according to a preset phase shift amount;
  • the radiation layer 2 is configured to transmit the microwave signal to the phase adjustment layer.
  • the microwave signal phase-shifted by the phase adjustment layer 3 is radiated; the radiation layer includes at least one first radiation patch.
  • the antenna provided in the embodiment of the present disclosure is a passive antenna structure.
  • the passive antenna structure does not contain devices that can amplify radio frequency signals. Therefore, the key to the passive antenna is to reduce the loss, which can reduce the loss of the antenna array. , reduce the phase shifter loss and reduce the feed layer loss.
  • the phase shifter in the antenna of the embodiment of the present disclosure may be a liquid crystal phase shifter, that is, the adjustable dielectric layer in the phase shifter uses a liquid crystal layer.
  • the phase shifters in the embodiments of the present disclosure include, but are not limited to, inverted microstrip line types, upright microstrip line types, coplanar waveguide transmission line types, variable capacitance types, etc. The following takes the phase shifter using an inverted microstrip line as an example.
  • Figure 2 is a top view of an inverted microstrip linear phase shifter
  • Figure 3 is a cross-sectional view of A-A' in Figure 2; as shown in Figures 2 and 3, the phase shifter includes a first substrate and a second substrate arranged oppositely. substrate, and a liquid crystal layer 30 disposed between the first substrate and the second substrate.
  • the first substrate includes a second dielectric substrate 10.
  • the first transmission line 11 and the bias line 12 are disposed on the side of the second dielectric substrate 10 close to the liquid crystal layer 30.
  • the first transmission line 11 and the bias line 12 are disposed on the side facing away from the second dielectric substrate 10.
  • the first alignment layer 13 on one side of the dielectric substrate 10 .
  • the second substrate includes a third dielectric substrate 20, a first reference electrode 21 disposed on the side of the third dielectric substrate 20 close to the liquid crystal layer 30, and a second alignment layer 22 disposed on the second reference electrode 21 close to the side of the liquid crystal layer 30.
  • the phase shifter not only includes the above-mentioned structure, but also includes a support structure 40 for maintaining the thickness of the liquid crystal cell (the cell thickness between the first substrate and the second substrate), and for maintaining the liquid crystal cell.
  • the structures such as the frame sealant 50 for sealing will not be described one by one here. As shown in FIG.
  • the first transmission line 11 has a first transmission end 11a (the first transmission end used as a phase shifter), a second transmission end 11b (a second transmission end used as a phase shifter), and a transmission main part. 11c; wherein, the first transmission end 11a, the second transmission end 11b and the transmission main part 11c all have a first endpoint and a second endpoint; the first endpoint of the first transmission end 11a and the first end of the transmission main part 11c The points are electrically connected, and the first endpoint of the second transmission end 11b and the second endpoint of the transmission main part 11c are electrically connected. It should be noted here that the first endpoint and the second endpoint are relative concepts.
  • the first endpoint is the beginning, the second endpoint is the end, otherwise, vice versa.
  • the first endpoint of the first transmission end 11a and the first endpoint of the transmission main body part 11c are electrically connected. At this time, the first endpoint of the first transmission end 11a and the first endpoint of the transmission main part 11c The first endpoint can be a common endpoint.
  • the first endpoint of the second transmission end 11b and the second endpoint of the transmission main body part 11c are electrically connected, and the first endpoint of the second transmission end 11b and the second endpoint of the transmission main body part 11c have the same endpoint.
  • the transmission main body part 11c includes but is not limited to meandering lines, and the number of meandering lines may be one or multiple.
  • the shape of the meandering line includes but is not limited to arcuate shape, wavy shape, etc.
  • the shape of each meandering line is at least partially different. In other words, some of the multiple meandering lines may have the same shape, or all of the meandering lines may have different shapes.
  • the orthographic projection of the second opening 211 of the second reference electrode 21 on the second dielectric substrate 10 is consistent with the at least one meandering line. There is no overlap in the projection on the second dielectric substrate 10 . For example, there is no overlap between the orthographic projection of the second opening 211 of the second reference electrode 21 on the second dielectric substrate 10 and the projection of each meandering line on the second dielectric substrate 10 . . This avoids the loss of microwave signals.
  • the second transmission end 11b is used as the transmitting end of the microwave signal; correspondingly, when the second transmission end 11b is used as the receiving end of the microwave signal, Then the first transmission end 11a is used as a transmitting end of the microwave signal.
  • the bias line 12 is electrically connected to the first transmission line 11 and is configured to load a DC bias signal to the first transmission line 11 so as to form a DC steady-state electric field between the first transmission line 11 and the second reference electrode 21 .
  • the axial orientation of the liquid crystal molecules in the liquid crystal layer 30 is deflected due to the electric field force.
  • the dielectric constant of the liquid crystal layer 30 is changed.
  • the phase shifter also includes a first wiring board and a second wiring board; wherein the first wiring board is bound and connected to the first substrate and is configured to bias the bias line 12 Provides DC bias voltage.
  • the second wiring board is bonded and connected to the second substrate, and is configured to provide a ground signal to the second reference electrode 21 .
  • Both the first wiring board and the second wiring board may include multiple types of wiring boards, such as flexible circuit boards (Flexible Printed Circuit, FPC) or printed circuit boards (Printed Circuit Board, PCB), etc., which are not limited here.
  • the first wiring board may have at least one first pad, one end of the bias line 12 is connected to the first pad (that is, bonded to the first pad), and the other end of the bias line 12 is the first transmission line 11;
  • the wiring board may also have at least one second bonding pad, and the second wiring board is electrically connected to the second reference electrode 21 through the second connection pad.
  • the phase shifter not only includes the above-mentioned structure, but also includes structures such as a support structure 40 and a frame sealant 50 ; wherein the frame sealant 50 is disposed between the second substrate and the third substrate. , which is located in the peripheral area and surrounds the microwave transmission area, and is used to seal the liquid crystal cell of the phase shifter; the support structure 40 is provided between the second substrate and the third substrate, and the number thereof can be multiple, each support structure 40 intervals are set in the microwave transmission area to maintain the cell thickness of the liquid crystal cell.
  • the bias line 12 is made of a high-resistance material.
  • a DC bias voltage is applied to the bias line 12 , the electric field formed by the bias line 12 and the second reference electrode 21 is only used to drive the deflection of the liquid crystal molecules of the liquid crystal layer 30 .
  • materials of bias line 12 include, but are not limited to, indium tin oxide (ITO), nickel (Ni), tantalum nitride (TaN), chromium (Cr), indium oxide (In2O3), tin oxide (Sn2O3) any of them.
  • the bias line 12 is made of ITO material.
  • the first transmission line 11 is made of metal material. Specifically, the first transmission line 11 is made of, but is not limited to, aluminum, silver, gold, chromium, molybdenum, nickel or iron.
  • the first transmission line 11 is a delay line, and the corners of the delay line are not equal to 90°, thereby preventing microwave signals from being reflected at the corners of the delay line and causing microwave signal loss.
  • the second dielectric substrate 10 can be made of a variety of materials.
  • the material of the second dielectric substrate 10 can include polyethylene terephthalate ( At least one of polyethylene glycol terephthalate (PET) and polyimide (Polyimide, PI).
  • PET polyethylene glycol terephthalate
  • PI polyimide
  • the second dielectric substrate 1011 is a rigid substrate
  • the material of the second dielectric substrate 10 can also be glass or the like.
  • the thickness of the second dielectric substrate 10 may be about 0.1mm-1.5mm.
  • the third dielectric substrate 20 can also be made of a variety of materials.
  • the material of the third dielectric substrate 20 can include polyethylene glycol terephthalate.
  • the third dielectric substrate 20 is a rigid substrate, the material of the third dielectric substrate 20 can also be glass or the like. The thickness of the third dielectric substrate 20 may be about 0.1mm-1.5mm. Of course, the second dielectric substrate 10 and the third dielectric substrate 20 can also be made of other materials, which are not limited here. The specific thickness of the second dielectric substrate 10 and the third dielectric substrate 20 can also be set according to the skin depth of the electromagnetic wave (radio frequency signal).
  • the feed layer 1 in the embodiment of the present disclosure may include a microstrip power division feed network or a waveguide power division feed network 4.
  • the feed layer adopts a waveguide power division feed network as an example.
  • Figure 4 is a schematic diagram of the waveguide power division feed network 4 in the antenna according to the embodiment of the present disclosure; as shown in Figure 4, the waveguide power division feed network can have an n-level sub-waveguide structure 101, with the phase adjustment layer pointing toward the waveguide.
  • the sub-waveguide structures 101 at each level are called the first-level sub-waveguide structure 101 - the n-th level sub-waveguide structure 101, and the number of the first-level to n-th level sub-waveguide structures 101 gradually decreases; where , n is an integer and n ⁇ 2;
  • each first-level sub-waveguide structure 101 is connected to a phase shifter, and the second ends of at least two first-level sub-waveguide structures 101 are connected to the second end of one second-level sub-waveguide structure 101.
  • One end; the second end of each second-level sub-waveguide structure 101 serves as the combined end of the waveguide power division feed network.
  • each first-level sub-waveguide structure 101 When n>2, the first end of each first-level sub-waveguide structure 101 is connected to a phase shifter, and the second ends of at least two first-level sub-waveguide structures 101 are connected to the second end of one second-level sub-waveguide structure 101.
  • the second end of the structure 101, the second end of each n-th level sub-waveguide structure 101 serves as the combined end of the waveguide power division feed network.
  • the waveguide power division feed network is a multi-stage power division sub-waveguide structure 101, and the multi-channel microwave signals are combined step by step from the first level to the n-th level sub-waveguide structure 101, until the last level sub-waveguide structure 101 , the combined path is the output of the final waveguide power division structure.
  • the second end of the last stage sub-waveguide structure 101 is connected to a signal connector, such as an SMA connector, and an external port test connection can also be connected to the sub-waveguide structure 101 device for easy testing.
  • connection method between the first-level sub-waveguide structure 101 and the phase shifter can be specifically that each sub-waveguide structure 101 of the first-level sub-waveguide structure 101 is connected to the second transmission line 11 of the phase shifter as the output end.
  • the terminal 11b is coupled, that is, each first-level sub-waveguide structure 101 is located on a side of the second substrate of a phase shifter away from the liquid crystal layer 30, and each first-level sub-waveguide structure 101 is configured to pass through the second reference
  • the second opening 211 on the electrode 21 and the second transmission end 11b (i.e., the second end) of the first transmission line 11 transmit microwave signals in a coupling manner, that is, each first-level sub-waveguide structure 101 is on the second substrate.
  • the orthographic projection at least partially coincides with the orthographic projection of the second opening 211 of the second reference electrode 21 of the phase shifter corresponding to the sub-waveguide structure 101 on the second substrate.
  • Figure 5 is a schematic diagram of the combination of the radiation layer and the phase shifter in the embodiment of the present disclosure; as shown in Figure 5, the radiation layer in the embodiment of the present disclosure includes a first dielectric substrate 021, which is disposed on the first dielectric substrate 021 away from the phase adjustment layer.
  • the first radiating piece on one side.
  • the outline of the first radiation piece may be any shape such as circular, rectangular, hexagonal, special-shaped, etc.
  • FIG. 6 is a top view of the first radiation patch 02 according to the first example of the embodiment of the present disclosure; as shown in FIG. 6 , the outline of the first radiation patch 02 is a quadrilateral.
  • the first radiation patch 02 includes a first side S1 and a second side S2 oppositely arranged along the first direction X, and a third side S3 and a fourth side S4 oppositely arranged along the second direction Y.
  • the polarization direction of the microwave signal is along the first side S1 and the second side S2.
  • FIG. 7 is a top view of the first radiation patch 02 according to the second example of the embodiment of the present disclosure; as shown in Figure 7, the outline of the first radiation patch 02 is a pentagon, using a right-handed circle. Polarized design.
  • the first radiation patch 02 includes a first side S1 and a second side S2 oppositely arranged along the first direction X, a third side S3 and a fourth side S4 oppositely arranged along the second direction Y, and is connected to the first side S1 and the second side S2.
  • the second end of side S1 and the first end of fourth side S4 are the fifth side S5.
  • the intersection point of the extension line of the first side S1 and the extension line of the fourth side S4 is the second intersection point P2.
  • the distance from the second intersection point P2 to the second end of the first side S1 is the same as the distance from the second intersection point P2 to the fourth intersection point.
  • the first ends of side S4 are equidistant. That is, the dotted line structure in the figure is an isosceles right triangle.
  • the third example, Figure 8 is a top view of the first radiation patch 02 according to the third example of the embodiment of the present disclosure; as shown in Figure 8, the outline of the first radiation patch 02 is a pentagon, using a right-handed circle. Polarized design.
  • the first radiation patch 02 includes a first side S1 and a second side S2 oppositely arranged along the first direction X, a third side S3 and a fourth side S4 oppositely arranged along the second direction Y, and is connected to the first side S1 and the second side S2.
  • the second end of the three side S3 and the first end of the second side S2 are the fifth side S5.
  • the intersection point of the extension line of the third side S3 and the extension line of the second side S2 is the third intersection point P3.
  • the distance from the third intersection point P3 to the second end of the second side S2 is the same as the distance from the third intersection point P3 to the second end of the second side S2.
  • the distance between the first ends of side S2 is equal. That is, the dotted line structure in the figure is an isosceles right triangle.
  • Figure 9 is a top view of the first radiation patch 02 according to the fourth example of the embodiment of the present disclosure.
  • the outline of the first radiation patch 02 is a pentagon and adopts a left-handed circular pole. design.
  • the first radiation patch 02 includes a first side S1 and a second side S2 oppositely arranged along the first direction X, a third side S3 and a fourth side S4 oppositely arranged along the second direction Y, and is connected to the first side S1 and the second side S2.
  • the second end of the second side S2 and the second end of the fourth side S4 are the fifth side S5.
  • the intersection point of the extension line of the second side S2 and the extension line of the fourth side S4 is the fourth intersection point P4, and the distance from the fourth intersection point P4 to the second end of the second side S2 is the same as the distance from the fourth intersection point P4 to the fourth intersection point P4.
  • the second ends of side S4 are equidistant. That is, the dotted line structure in the figure is an isosceles right triangle.
  • Figure 10 is a top view of the first radiation patch 02 according to the fifth example of the embodiment of the present disclosure.
  • the outline of the first radiation patch 02 is a pentagon and adopts a left-handed circular pole. design.
  • the first radiation patch 02 includes a first side S1 and a second side S2 oppositely arranged along the first direction X, a third side S3 and a fourth side S4 oppositely arranged along the second direction Y, and is connected to the first side S1 and the second side S2. a first end of side S1 and a first end of third side S3 of fifth side S5.
  • the intersection point of the extension line of the first side S1 and the extension line of the third side S3 is the first intersection point P1
  • the distance from the first intersection point P1 to the first end of the first side S1 is the same as the distance from the first intersection point P1 to the first intersection point P1.
  • the distance between the first ends of the two sides S2 is equal. That is, the dotted line structure in the figure is an isosceles right triangle.
  • the antenna not only includes the above structures but also includes a housing 5, a power supply and a wave control system 4, a radome 6 and other structures. This will not be listed one by one.
  • FIG 11 is a partial structural schematic diagram of an antenna according to an embodiment of the present disclosure; as shown in Figure 11, an antenna is also provided in an embodiment of the present disclosure.
  • the structure of the antenna is roughly the same as that of the antenna shown in Figure 1, with the difference being that,
  • This type of antenna also includes a probe 7 electrically connected to the first radiation patch 02 .
  • the first radiation layer also includes a first dielectric substrate 021.
  • the first radiation patch 02 is disposed on a side of the first dielectric substrate 021 away from the phase adjustment layer.
  • the probe 7 penetrates the first dielectric substrate 021 and points to the second reference electrode. The second opening.
  • the radio frequency signal propagates through space, it is received by the first radiation patch 02, and then propagates downward in the probe 7 in the form of radio frequency current, and is converted into an electromagnetic wave at the end of the probe 7 and enters in the form of spatial coupling.
  • the phase shifter performs phase shifting.
  • the material of the probe 7 is copper
  • the diameter of the probe 7 is 20um
  • the outer coating of the probe 7 is made of polytetrafluoroethylene with a thickness of 70um.
  • the first dielectric substrate 021 may be a printed circuit board (PCB board).
  • a first reference electrode 022 layer may also be provided on the side of the first dielectric substrate 021 close to the phase shifter, and a first opening may be provided at a position where the first reference electrode 022 corresponds to the probe 7 023.
  • the orthographic projections of a first opening 023 and a second opening on the first dielectric substrate 021 overlap.
  • the first opening 023 and the second opening are arranged in one-to-one correspondence.
  • Figure 12 is a schematic diagram of the connection position between the first radiation patch 02 and the probe 7 of the antenna in Figure 11; as shown in Figure 12, no matter whether the first radiation patch 02 adopts any of the above-mentioned first radiation patches, Piece 02, the connection node between the probe 7 and the first radiation patch 02 is the first node P0; the extension line of the first side S1, the second side S2, the third side S3 and the fourth side S4 of the first radiation patch 02
  • the center of the defined virtual quadrilateral is the first center O1.
  • the first distance L1 is about 1.59mm.
  • the different positions of the probe 7 on the patch will cause the antenna impedance to change.
  • the extending direction of the line connecting the first node P0 and the first center O1 is the second direction Y. That is, as shown in FIG. 12 , the first node P0 moves up and down in the second direction Y compared to the first center O1.
  • the liquid crystal phase shifter utilizes the anisotropy of liquid crystal molecules, the liquid crystal molecules undergo spatial rotation as the applied external electric field changes, causing the equivalent dielectric constant and equivalent loss tangent to change, thereby changing the phase and amplitude of the electromagnetic wave.
  • the strength of the applied electric field the magnitude of the voltage
  • the phase can be accurately controlled.
  • the dielectric constant and loss tangent of liquid crystal molecules are functions of temperature and vary greatly with temperature changes, resulting in large temperature drift characteristics in the performance of liquid crystal phase shifters, which is not feasible for phased array antenna systems. Accepted. Therefore, embodiments of the present disclosure also provide an antenna, which may include any of the above-mentioned antenna structures. Based on the above-mentioned structure, the antenna adds a temperature control system. Detailed description is provided with the following examples.
  • Figure 13 is a schematic structural diagram of a first example of an antenna according to an embodiment of the present disclosure; as shown in Figure 13, the phase adjustment layer of the antenna is provided on one side close to the radiation layer and/or the feed layer.
  • a temperature control unit layer configured to adjust the temperature of the phase adjustment layer to adjust the operating temperature of the antenna.
  • Figure 13 only takes as an example that the temperature control unit layer is provided on the side of the phase adjustment layer close to the radiation layer and the side of the phase adjustment layer close to the feed layer.
  • the temperature control unit layer on the side of the phase adjustment layer close to the radiation layer is set as the first temperature control unit layer 81
  • the temperature control unit layer on the side of the phase adjustment layer close to the feed layer is set as the second temperature control unit layer 82 .
  • both the first temperature control unit layer 81 and the second temperature control layer 300 may be provided with a plurality of flow channels 811 for accommodating the flow of working fluid.
  • the working fluid of a certain temperature can be driven to flow into the flow channel 811 in the first temperature control unit layer 81 and the second temperature control unit layer 82. Since the first temperature control unit layer 81 and The second temperature control unit layer 82 is arranged close to the phase shifter, so the temperature of the phase shifter can be adjusted by the working medium.
  • the first temperature control unit layer 81 and the second temperature control layer 300 can be a whole layer structure made of a thermal conductive material, for example, metal can be used.
  • the base material of the second temperature control unit layer 82 can also provide support for the antenna.
  • the shapes of the first temperature control unit layer 81 and the second temperature control unit layer 82 are close to the upper and lower surfaces of the phase shifter. Since the positions of the contact surfaces absorb the most heat, they are called the first temperature control unit layer 81 and the second temperature control unit layer 81 . Control the cold head of the unit layer 82, and then open a plurality of flow channels 811 in the entire layer structure.
  • the antenna may also include a circulation device 9 connected to each flow channel 811 of the first temperature control unit layer 81 and the second temperature control unit layer 82 for driving the working medium to circulate.
  • the circulation device 9 may include a working fluid driving unit and a working fluid temperature control unit.
  • the working fluid driving unit is used to drive the flow of the working fluid, such as a water-cooled pump, a motor, etc.
  • the working fluid temperature control unit is used to control the working fluid. It has the functions of heating, cooling and temperature control, and can control the temperature of the working medium to be constant, for example, between 25°C ⁇ 0.5°C.
  • the circulation device 9 can be arranged outside the housing 5 .
  • the radiation layer includes the above-mentioned first dielectric substrate 021
  • the first dielectric substrate 021 is a PCB board
  • the flow channel 811 in the second temperature control unit layer 82 can be pasted on the PCB board using thermal conductive glue.
  • the feed layer includes a waveguide feed network
  • the first temperature control unit layer 81 can be disposed on the same layer as the waveguide feed network, and the orthographic projections of the two on the second dielectric substrate do not overlap.
  • the flow channel 811 of the first temperature control unit layer 81 can be obtained by cutting, washing and slicing the half flow channel 811 with a machine tool and then bonding the two half flow channels 811.
  • the liquid working medium gives priority to pure water with the largest specific heat capacity.
  • Figure 14 is a schematic structural diagram of a second example of an antenna according to an embodiment of the present disclosure; as shown in Figure 14, this example is different from the first example in that the first temperature control unit layer 81 and the second temperature control unit layer 82 may include electric heating fins and/or semiconductor refrigeration fins 812.
  • the first temperature control unit layer 81 and the second temperature control unit layer 82 can have various structures and arrangements.
  • the first temperature control unit layer 81 and the second temperature control unit layer 82 are both electric heating sheets.
  • the resistance wires may be arranged around the periphery of the second opening 211 and the transmission line 11 , in a straight line, or in a spiral shape, etc., which are not limited here.
  • the material of the resistance wire can be a high-resistance material, such as indium tin oxide, which is not limited here.
  • the electric heating piece 812 can use a resistance wire heating piece and a PTC heating piece, or a heating resistor such as ITO material can be directly made on the back of the liquid crystal phase shifter;
  • the semiconductor cooling piece 812 (using the unique Peltier effect of semiconductor materials) can Bismuth telluride-based semiconductor materials such as P-type Bi 2 Te 3 -Sb 2 Te 3 or N-type Bi 2 Te 3 -Bi 2 Se 3 are used.
  • the antenna provided by the embodiment of the present disclosure may also include a plurality of temperature measurement units 813.
  • the plurality of temperature measurement units 813 are provided in at least some of the phase shifters of the phase adjustment layer 3, and may be provided in One side of the first substrate and/or one side of the second substrate of each phase shifter of the partial phase shifter can be disposed close to or away from the tunable dielectric layer on either of the first substrate and the second substrate.
  • the temperature measurement unit is used to detect the operating temperature of the phase shifter.
  • the temperature measurement unit can be, for example, a thermistor, a thermocouple, etc.
  • the antenna provided by the embodiment of the present disclosure may also include a control unit 100.
  • the control unit 100 is connected to the temperature measurement unit and the first temperature control unit layer 81 and the second temperature control unit layer 82.
  • the control unit 100 can control the temperature according to the temperature measurement.
  • the operating temperature of the phase shifter fed back by the unit controls the first temperature control unit layer 81 and the second temperature control unit layer 82 to adjust the temperature of the phase shifter.
  • the temperature measurement unit 813 measures the temperature near the phase shifter in real time. When it detects that one or several temperature measurement units 813 are low, it feeds back to the control unit 100.
  • the control unit 100 controls the electric heating sheet 812 near the temperature abnormal point.
  • Heating is carried out until the temperature returns to the normal operating temperature, and heating is stopped; when one or several temperature measurement units 813 are detected to be low, feedback is given to the control unit 100, and the control unit 100 controls the semiconductor refrigeration chip near the temperature abnormal point. 812 performs cooling and cooling until the temperature returns to the normal operating temperature, and then stops cooling.
  • Figure 15 is a schematic structural diagram of a third example of an antenna according to an embodiment of the present disclosure; as shown in Figure 15, this example is different from the first example and the second example.
  • the antenna is installed on the shell.
  • the wind control device on the body 5 adjusts the temperature of the antenna.
  • the antenna housing 5 includes at least a first side plate and a second side plate that are arranged oppositely; a first wind control device 201 is provided on the first side, and a second wind control device 201 is provided on the second side plate.
  • Device 202; the first wind control device 201 is configured to introduce the air in the environment into the interior of the housing 5, and the second wind control device 202 is configured to guide the air inside the housing 5 out of the housing 5.
  • both the first wind control device 201 and the second wind control device 202 may be fans. As shown in Figure 15, two openings are opened on both sides of the antenna housing 5, and fans are installed at the openings. The left fan draws air from the environment into the interior of the antenna housing 5 from the outside of the antenna housing 5, and the right fan The air inside the antenna housing 5 is sucked out and discharged to the environment.
  • the control system turns on the fan power and uses the fast flowing air as the heat exchange medium to transfer the heat in the antenna system to the air to maintain the temperature of the phase shifter at normal Working temperature range.
  • this embodiment can be combined with heat pump technology.
  • the control system starts the heat pump to collect the heat in the environment (generating superheated air) and then blows it into the antenna housing 5 through the fan, so that the antenna The internal temperature rises to normal operating temperature, and then the control system turns off the heat pump power and turns off the fan power.
  • Figure 16 is a schematic structural diagram of a fourth example of an antenna according to an embodiment of the present disclosure; as shown in Figure 16, the difference between this example and the third example is that the temperature control layer 300 is provided in the housing 5 on the outer wall.
  • the temperature control layer 300 may be a PI/Al/Al 2 O 3 composite thermal insulation film.
  • the surface of the non-radiating surface of the antenna (that is, the surrounding and bottom surface of the housing 5) is covered with a layer of PI/Al/Al 2 O 3 composite film, which has a thermal insulation effect.
  • the thickness of the first layer of PI (polyimide) film is 50um ⁇ 125um.
  • a metal Al film of 100nm ⁇ 1um is deposited on it by vacuum magnetron sputtering, and then a metal Al film of 50nm ⁇ 1um is deposited on it by vacuum magnetron sputtering.
  • 300nm Al 2 O 3 film Al 2 O 3 serves as the anti-oxidation layer of the Al film.
  • the surface of the Al film has extremely low emissivity, which can prevent the heat inside the antenna from being emitted to the environment through thermal radiation; at the same time, the surface of the Al film has extremely high reflectivity for infrared and visible light, which can prevent the sun shining towards the antenna housing 5 Light and thermal radiation (infrared rays) in the environment are reflected back into the environment.
  • Such a layer of composite film plays a thermal insulation role (the heat inside the antenna is not lost to the environment, and the heat in the environment cannot be easily transferred to the inside of the antenna).
  • any structure in the above three examples can also be combined to control the temperature of the antenna. The description will not be repeated here.
  • embodiments of the present disclosure further provide an electronic device, which may include an antenna.
  • the antenna provided by the embodiment of the present disclosure also includes a transceiver unit, a radio frequency transceiver, a signal amplifier, a power amplifier, and a filtering unit.
  • This antenna can be used as a transmitting antenna or a receiving antenna.
  • the transceiver unit may include a baseband and a receiving end.
  • the baseband provides signals in at least one frequency band, such as 2G signals, 3G signals, 4G signals, 5G signals, etc., and sends signals in at least one frequency band to the radio frequency transceiver.
  • After the antenna in the antenna receives the signal it can be processed by the filtering unit, power amplifier, signal amplifier, and radio frequency transceiver and then transmitted to the receiving end in the starting unit.
  • the receiving end can be, for example, a smart gateway.
  • the radio frequency transceiver is connected to the transceiver unit, and is used to modulate the signal sent by the transceiver unit, or to demodulate the signal received by the antenna and then transmit it to the transceiver unit.
  • the radio frequency transceiver can include a transmitting circuit, a receiving circuit, a modulating circuit, and a demodulating circuit. After the transmitting circuit receives multiple types of signals provided by the baseband, the modulating circuit can modulate the multiple types of signals provided by the baseband, and then sent to the antenna.
  • the antenna receives the signal and transmits it to the receiving circuit of the radio frequency transceiver.
  • the receiving circuit transmits the signal to the demodulation circuit.
  • the demodulation circuit demodulates the signal and transmits it to the receiving end.
  • the radio frequency transceiver is connected to a signal amplifier and a power amplifier
  • the signal amplifier and the power amplifier are connected to a filtering unit
  • the filtering unit is connected to at least one antenna.
  • the signal amplifier is used to improve the signal-to-noise ratio of the signal output by the radio frequency transceiver and then transmitted to the filtering unit
  • the power amplifier is used to amplify the power of the signal output by the radio frequency transceiver and then transmits it to the filtering unit; filtering
  • the unit may include a duplexer and a filter circuit.
  • the filter unit combines the signals output by the signal amplifier and the power amplifier, filters out clutter, and then transmits them to the antenna, and the antenna radiates the signal.
  • the antenna When the antenna receives signals, the antenna receives the signal and transmits it to the filter unit.
  • the filter unit filters out the clutter from the signal received by the antenna and transmits it to the signal amplifier and power amplifier.
  • the signal amplifier gains the signal received by the antenna, increasing The signal-to-noise ratio of the signal; the power amplifier amplifies the power of the signal received by the antenna.
  • the signal received by the antenna is processed by the power amplifier and signal amplifier and then transmitted to the radio frequency transceiver, and then the radio frequency transceiver transmits it to the transceiver unit.
  • the signal amplifier may include multiple types of signal amplifiers, such as low noise amplifiers, which are not limited here.
  • the antenna provided by embodiments of the present disclosure further includes a power management unit, which is connected to the power amplifier and provides the power amplifier with a voltage for amplifying the signal.

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Abstract

本公开提供一种天线及电子设备，属于通信技术领域。本公开的天线，其包括馈电层、相位调整层和辐射层；其中，所述馈电层，被配置为将微波信号传输给所述相位调整层；所述相位调整层，被配置为按照预设的移相量对所述微波信号进行移相；所述辐射层，被配置为将被所述相位调整层移相后的所述微波信号进行辐射；所述辐射层包括至少一个第一辐射贴片。

Description

天线及电子设备 技术领域
本公开属于天线技术领域，具体涉及一种天线及电子设备。
背景技术
在一些天线中，由于天线中移相器的介质层的介电常数会随着温度的变化发生大幅度变化，即温度升高会导致移相器的移相角度范围减小和插损增加，反应到天线上会使天线性能恶化，如副瓣抬升、主瓣降低、波束指向紊乱等，对于天线的仿真设计和实际使用带来了巨大挑战。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提供一种天线及电子设备。
第一方面，本公开实施例提供一种天线，其包括馈电层、相位调整层和辐射层；其中，
所述馈电层，被配置为将微波信号传输给所述相位调整层；
所述相位调整层，被配置为按照预设的移相量对所述微波信号进行移相；
所述辐射层，被配置为将被所述相位调整层移相后的所述微波信号进行辐射；所述辐射层包括至少一个第一辐射贴片。
其中，所述第一辐射贴片包括沿第一方向相对设置的第一边和第二边，沿第二方向相对设置的第三边和第四边；所述第一辐射贴片还包括第五边；所述第五边连接在以下位置至少之一：
所述第一边的第一端和所述第三边的第一端之间；
所述第一边的第二端和所述第四边的第一端之间；
所述第二边的第一端和所述第三边的第二端之间；
所述第二边的第二端和所述第四边的第二端之间。
其中，当所述第五边连接在所述第一边的第一端和所述第三边的第一端 之间时，所述第一边的延长线和所述第三边的延长线的交点为第一交点，所述第一交点到所述第一边的第一端的距离与所述第一交点到所述第三边的第一端的距离相等；
当所述第一边的第二端和所述第四边的第一端之间时，所述第一边的延长线与所述第四边的延长线的交点为第二交点，所述第二交点到所述第一边的第二端的距离与所述第二交点到所述第四边的第一端的距离相等；
当所述第二边的第一端和所述第三边的第二端之间时，所述第二边的延长线与所述第三边的延长线的交点为第三交点，所述第三交点到所述第二边的第一端的距离与所述第三交点到所述第三边的第二端的距离相等；
当所述第二边的第二端和所述第四边的第二端之间时，所述第二边的延长线与所述第四边的延长线的交点为第四交点，所述第四交点到所述第二边的第二端的距离与所述第四交点到所述第四边的第二端的距离相等。
其中，所述相位调整层包括至少一个所述移相器，所述移相器的第一传输端与所述馈电层的一个第二馈电端口电连接；所述移相器的第二传输端与一个所述第一辐射贴片电连接；
所述辐射层还包括第一介质基板和至少一个探针，所述第一辐射层设置在所述第一介质基板背离所述相位调整层的一侧；一个所述探针电连接一个所述第一辐射层，且由所述探针贯穿所述第一介质基板指向所述移相器的第二传输端。
其中，所述第一辐射贴片包括沿第一方向相对设置的第一边和第二边，以及沿第二方向相对设置的第三边和第四边；所述第一边、所述第二边、所述第三边、所述第四边的延长线所限定出的虚拟四边形的中心为第一中心，所述探针与所述第一辐射贴片的连接节点为第一节点；所述第一节点和所述第一中心之间具有一定的第一距离。
其中，所述第一节点与所述第一中心的连线的延伸方向为所述第二方向。
其中，所述天线还包括设置在所述第一介质基板和相位调整层之间的第 一参考电极层；且所述第一参考电极层具有多个第一开口，所述探针与所述第一开口对应设置。
其中，所述相位调整层包括至少一个移相器，所述移相器包括相对设置的第一基板、第二基板和设置在所述第一基板和所述第二基板之间的可调电介质层；在所述第一基板和所述第二基板中至少一者背离所述可调电介质层的一侧设置有温控单元层；所述温控单元层，被配置为调节所述相位调整层的温度，以调节所述天线的工作温度。
其中，所述温控单元层中设置有多个流道，用于容纳工质流动。
其中，所述天线还包括：循环装置，连接所述流道；
所述循环装置包括工质驱动单元和工质温控单元，所述工质驱动单元用于驱动所述工质流动，所述工质温控单元用于控制所述工质的温度。
其中，所述馈电层包括波导功分馈电网络；设置在所述第一基板背离可调电介质层一侧的所述温控单元层，与所述波导功分馈电网络同层设置，且所述波导功分馈电网络在所述第一介质基板上的正投影无重叠。
其中，所述温控单元层包括电加热片和/或半导体制冷片。
其中，至少部分所述移相器的所述第一基板和/或所述第二基板背离所述可调电介质层的一侧还设置有多个测温单元，用于检测所述移相器的工作温度。
其中，所述天线包括壳体，所述壳体包括至少包括相对设置的第一侧板和第二侧板；在所述第一侧边上设置有第一风控装置，在所述第二侧板上设置有第二风控装置；所述第一风控装置被配置为，将环境中的空气导入所述壳体内部，所述第二风控装置被配置为，将所述壳体内部的空气导出壳体。
其中，所述天线包括壳体，在所述壳体外壁设置有温控层。
第二方面，本公开实施例提供一种电子设备，包括上述任一所述的天线。
附图说明
图1为本公开实施例的一种天线的结构示意图。
图2为一种倒置微带线型移相器的俯视图。
图3为图2的A-A＇的截面图。
图4为本公开实施例的天线中的波导功分馈电网络4示意图。
图5为本公开实施例的辐射层和移相器的组合示意图。
图6为本公开实施例的第一种示例的第一辐射贴片的俯视图。
图7为本公开实施例的第二种示例的第一辐射贴片的俯视图。
图8为本公开实施例的第三种示例的第一辐射贴片的俯视图。
图9为本公开实施例的第四种示例的第一辐射贴片的俯视图。
图10为本公开实施例的第五种示例的第一辐射贴片的俯视图。
图11为本公开实施例的一种天线的局部结构示意图。
图12为图11的天线的第一辐射贴片与探针连接位置的示意图。
图13为本公开实施例的天线的第一种示例的结构示意图。
图14为本公开实施例的天线的第二种示例的结构示意图。
图15为本公开实施例的天线的第三种示例的结构示意图。
图16为本公开实施例的天线的第四种示例的结构示意图。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理 的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
第一方面，图1为本公开实施例的一种天线的结构示意图；如图1所示，本公开实施例提供一种天线，该天线包括馈电层1、相位调整层3和辐射层2。其中，馈电层1被配置为将微波信号传输给所述相位调整层；相位调整层3被配置为按照预设的移相量对所述微波信号进行移相；辐射层2被配置为将被相位调整层3移相后的所述微波信号进行辐射；辐射层包括至少一个第一辐射贴片。
本公开实施例中所提供的天线是一种无源天线结构，无源天线结构中不含有能够对射频信号进行放大的器件，因此无源天线的关键是减小损耗，可以减小天线阵列损耗，减小移相器呈损耗，减小馈电层损耗。
为了清楚本公开实施例中的天线的结构，以下分别对天线的各个部分进行介绍。
本公开实施例的天线中的移相器可以为液晶移相器，也即移相器中的可调电介质层采用液晶层。具体的，本公开实施例中的移相器包括但不限于倒置微带线型，正置微带线型，共面波导传输线型，可变电容型等。以下以移相器采用倒置微带线型为例。
图2为一种倒置微带线型移相器的俯视图；图3为图2的A-A＇的截面图；如图2和3所示，该移相器包括相对设置的第一基板和第二基板，以及设置在第一基板和第二基板之间的液晶层30。其中，第一基板包括第二介质基板10，设置在第二介质基板10靠近液晶层30一侧的第一传输线11和偏置线12，设置在第一传输线11和偏置线12背离第二介质基板10一侧的第一配向层13。第二基板包括第三介质基板20，设置在第三介质基板20靠近液晶层30一侧的第一参考电极21，设置在第二参考电极21设置靠近液晶层30一侧的第二配向层22。当然，如图3所示，移相器不仅包括上述结构，而且还包括用于维持液晶盒厚(第一基板和第二基板之间的盒厚)的支 撑结构40，以及用于对液晶盒进行密封的封框胶50等结构，在此不一一说明。如图2所示，第一传输线11具有第一传输端11a(用作移相器的第一传输端)、第二传输端11b(用作移相器的第二传输端)以及传输主体部11c；其中，第一传输端11a、第二传输端11b以及传输主体部11c均具有第一端点和第二端点；第一传输端11a的第一端点和传输主体部11c的第一端点电连接，第二传输端11b的第一端点和传输主体部11c的第二端点电连接。在此需要说明的是，第一端点和第二端点为相对概念，若第一端点为首端，则第二端点则为末端，否则反之。另外，在本公开实施例中，第一传输端11a的第一端点和传输主体部11c的第一端点电连接，此时第一传输端11a的第一端点和传输主体部11c的第一端点可以共端点。相应的，第二传输端11b的第一端点和传输主体部11c的第二端点电连接，第二传输端11b的第一端点和传输主体部11c的第二端点共端点。
传输主体部11c包括但不限于蜿蜒线，且蜿蜒线的数量可以为一条也可以为多条。蜿蜒线的形状包括但不限于弓字形、波浪形等。
在一些示例中，传输主体部11c所包括的蜿蜒线的数量为多条时，各蜿蜒线的形状至少部分不同。也就是说，多条蜿蜒线中可以存在部分形状相同，也可以是所有的蜿蜒线的形状都不相同。
在一些示例中，当第一传输线11的传输主体部11c包括至少一条蜿蜒线时，第二参考电极21的第二开口211在第二介质基板10上的正投影与至少一条蜿蜒线在第二介质基板10上的投影无重叠，例如：第二参考电极21的第二开口211在第二介质基板10上的正投影与各蜿蜒线在第二介质基板10上的投影均无重叠。从而避免微波信号的损失。
在一些示例中，当第一传输端11a用作微波信号的接收端，则第二传输端11b用作微波信号的发送端；相应的，当第二传输端11b用作微波信号的接收端，则第一传输端11a则用作微波信号的发送端。偏置线12与第一传输线11电连接，被配置为给第一传输线11加载直流偏置信号，以使第一传输线11与第二参考电极21之间形成直流稳态电场。微观上液晶层30的液晶分子由于受到电场力，轴取向发生偏转。宏观上即改变了液晶层30的介 电常数，当有微波信号在第一传输线11和第二参考电极21之间传输时，液晶层30的介电常数改变使得微波信号的相位发生相应的变化。具体的，微波信号的相位变化量的大小与液晶分子的偏转角度、电场强度正相关，即施加直流偏置电压可以改变微波信号的相位，此为液晶移相器的工作原理。需要说明的是，在本公开实施例中，该移相器还包括第一接线板和第二接线板；其中，第一接线板与第一基板绑定连接，且配置为向偏置线12提供直流偏置电压。第二接线板与第二基板绑定连接，且配置为向第二参考电极21提供接地信号。第一接线板和第二接线板均可以包括多种类型的接线板，例如柔性电路板(Flexible Printed Circuit，FPC)或印刷电路板(Printed Circuit Board，PCB)等，在此不做限制。第一接线板上可以具有至少一个第一焊盘，偏置线12的一端连接第一焊盘(即与第一焊盘邦定)，偏置线12的另一端第一传输线11；第二接线板上也可以具有至少一个第二焊盘，第二接线板通过第二连接焊盘与第二参考电极21电连接。
在一些示例中，继续参照图3，该移相器不仅包括上述结构，而且还包括支撑结构40和封框胶50等结构；其中，封框胶50设置在第二基板和第三基板之间，其位于周边区，且环绕微波传输区，用于对移相器的液晶盒进行密封；支撑结构40设置在第二基板和第三基板之间，且其数量可以为多个，各个支撑结构40间隔设置在微波传输区，用于维持液晶盒的盒厚。
在一些示例中，偏置线12采用的是高阻材料，在给偏置线12施加直流偏压时，其与第二参考电极21所形成的电场仅用于驱动液晶层30的液晶分子偏转，而对于移相器所传输的微波信号而言，相当于开路，也就是说，微波信号仅沿着第一传输线11进行传输。在一些示例中，偏置线12的材料包括但不限于氧化铟锡(ITO)，镍(Ni)，氮化钽(TaN)，铬(Cr)，氧化铟(In2O3)，氧化锡(Sn2O3)中的任意一种。优选的，偏置线12采用ITO材料。
在一些示例中，第一传输线11采用金属材料，具体的第一传输线11的材料但不限于采用铝、银、金、铬、钼、镍或铁等金属制成。
在一些示例中，第一传输线11为延时线，该延时线的拐角不等于90°， 从而避免微波信号在延时线的拐角位置发生反射，而造成微波信号的损失。
在一些示例中，第二介质基板10可以采用多种材料制成，例如，若第二介质基板10为柔性基底，则第二介质基板10的材料可以包括聚对苯二甲酸乙二醇酯(polyethylene glycol terephthalate，PET)和聚酰亚胺(Polyimide，PI)中的至少一种，若第二介质基板1011为刚性基底，第二介质基板10的材料也可以为玻璃等。第二介质基板10的厚度可以在0.1mm-1.5mm左右。第三介质基板20也可以采用多种材料制成，例如，若第三介质基板20为柔性基底，则第三介质基板20的材料可以包括聚对苯二甲酸乙二醇酯(polyethylene glycol terephthalate，PET)和聚酰亚胺(Polyimide，PI)中的至少一种，若第三介质基板20为刚性基底，第三介质基板20的材料也可以为玻璃等。第三介质基板20的厚度可以在0.1mm-1.5mm左右。当然，第二介质基板10和第三介质基板20的材料也可以采用其他材料，在此不做限定。对于第二介质基板10和第三介质基板20的具体厚度也可以根据电磁波(射频信号)的趋肤深度来设置。
本公开实施例中的馈电层1可以包括微带线功分馈电网络也可以采用波导功分馈电网络4。在本公开实施例中以馈电层采用波导功分馈电网络为例。
具体地，图4为本公开实施例的天线中的波导功分馈电网络4示意图；如图4所示，波导功分馈电网络可以具有n级子波导结构101，由相位调整层指向波导功分馈电网络的方向，将各级子波导结构101称为第1级子波导结构101-第n级子波导结构101，第1级至第n级子波导结构101的数量逐渐减少；其中，n为整数且n≥2；
当n＝2时，每个第1级子波导结构101的第一端连接一个移相器，至少两个第1级子波导结构101的第二端连接一个第2级子波导结构101的第一端；每个第2级子波导结构101的第二端作为波导功分馈电网络的合路端。
当n＞2时，每个第1级子波导结构101的第一端连接一个移相器，至少两个第1级子波导结构101的第二端连接一个第2级子波导结构101的第 一端；每个第m级子波导结构101的第一端连接至少两个第m-1级子波导结构101的第二端，至少两个第m级子波导结构101的第二端连接一个第m+1级子波导结构101的第一端，其中，m为整数且1＜m＜n；每个第n级子波导结构101的第一端连接至少两个第n-1级子波导结构101的第二端，每个第n级子波导结构101的第二端作为波导功分馈电网络的合路端。
也就是说，波导功分馈电网络为多级功分的子波导结构101，多路微波信号由第1级到第n级子波导结构101逐级合路，直至最后一级子波导结构101，合路为最终波导功分结构的输出，在一些示例中，最后一级子波导结构101的第二端接信号连接器，例如SMA连接器，还可以在子波导结构101上外接端口测试连接器，便于进行测试。
进一步地，第1级子波导结构101与移相器的连接方式，具体可以为第1级子波导结构101的每个子波导结构101，与移相器的第一传输线11作为输出端的第二传输端11b相耦合，即每个第1级的子波导结构101位于一个移相器的第二基板背离液晶层30的一侧，每个第1级的子波导结构101被配置为通过第二参考电极21上的第二开口211与第一传输线11的第二传输端11b(即第二端)采用耦合的方式传输微波信号，即每个第1级的子波导结构101在第二基板上的正投影，和与该子波导结构101对应的移相器的第二参考电极21的第二开口211在第二基板上的正投影至少部分重合。
图5为本公开实施例的辐射层和移相器的组合示意图；如图5所示，本公开实施例中的辐射层包括第一介质基板021，设置在第一介质基板021背离相位调整层一侧的第一辐射片。其中，第一辐射片的轮廓可以为圆形、矩形、六边形、异形等任意形状。当第一辐射片采用不同形状时，微波信号的辐射效率和极化方向均不同。以下结合几个具体例子，对采用不同形状的第一辐射贴片02的天线进行说明。
第一种示例，图6为本公开实施例的第一种示例的第一辐射贴片02的俯视图；如图6所示，第一辐射贴片02的轮廓为四边形。具体的，第一辐射贴片02包括沿第一方向X相对设置的第一边S1和第二边S2，沿第二方向Y相对设置的第三边S3和第四边S4。第一辐射贴片02采用线极化设计 时，微波信号的极化方向是沿第一边S1和第二边S2的方向。
第二种示例，图7为本公开实施例的第二种示例的第一辐射贴片02的俯视图；如图7所示，第一辐射贴片02的轮廓为五边形，采用右旋圆极化设计。具体的，第一辐射贴片02包括沿第一方向X相对设置的第一边S1和第二边S2，沿第二方向Y相对设置的第三边S3和第四边S4，以及连接在第一边S1的第二端和第四边S4的第一端的第五边S5。在一个示例中，第一边S1的延长线与第四边S4的延长线的交点为第二交点P2，第二交点P2到第一边S1的第二端的距离与第二交点P2到第四边S4的第一端的距离相等。也即图中虚线结构为等腰直角三角形。
第三种示例，图8为本公开实施例的第三种示例的第一辐射贴片02的俯视图；如图8所示，第一辐射贴片02的轮廓为五边形，采用右旋圆极化设计。具体的，第一辐射贴片02包括沿第一方向X相对设置的第一边S1和第二边S2，沿第二方向Y相对设置的第三边S3和第四边S4，以及连接在第三边S3的第二端和第二边S2的第一端的第五边S5。在一个示例中，第三边S3的延长线与第二边S2的延长线的交点为第三交点P3，第三交点P3到第二边S2的第二端的距离与第三交点P3到第二边S2的第一端的距离相等。也即图中虚线结构为等腰直角三角形。
第四种示例，图9为本公开实施例的第四种示例的第一辐射贴片02的俯视图；如图9所示，第一辐射贴片02的轮廓为五边形，采用左旋圆极化设计。具体的，第一辐射贴片02包括沿第一方向X相对设置的第一边S1和第二边S2，沿第二方向Y相对设置的第三边S3和第四边S4，以及连接在第二边S2的第二端和第四边S4的第二端的第五边S5。在一个示例中，第二边S2的延长线与第四边S4的延长线的交点为第四交点P4，第四交点P4到第二边S2的第二端的距离与第四交点P4到第四边S4的第二端的距离相等。也即图中虚线结构为等腰直角三角形。
第五种示例，图10为本公开实施例的第五种示例的第一辐射贴片02的俯视；如图10所示，第一辐射贴片02的轮廓为五边形，采用左旋圆极化设计。具体的，第一辐射贴片02包括沿第一方向X相对设置的第一边S1和 第二边S2，沿第二方向Y相对设置的第三边S3和第四边S4，以及连接在第一边S1的第一端和第三边S3的第一端的第五边S5。在一个示例中，第一边S1的延长线与第三边S3的延长线的交点为第一交点P1，第一交点P1到第一边S1的第一端的距离与第一交点P1到第二边S2的第一端的距离相等。也即图中虚线结构为等腰直角三角形。
以上为图1所示天线的部分结构的一些示例性的结构，当然，如图1所示，天线不仅包括以上结构还可以包括壳体5、电源和波控系统4，天线罩6等结构在此不再一一列举。
图11为本公开实施例的一种天线的局部结构示意图；如图11所示，在本公开实施例还提供一种天线，该天线与图1所示的天线的结构大致相同，区别在于，在该种天线中还包括与第一辐射贴片02电连接的探针7。第一辐射层还包括第一介质基板021，所述第一辐射贴片02设置在第一介质基板021背离相位调整层的一侧，探针7贯穿第一介质基板021指向第二参考电极的第二开口。在该种情况下，射频信号经过空间传播后，被第一辐射贴片02接收，然后通过以射频电流形式在探针7向下传播，在探针7尽头转换成电磁波以空间耦合的方式进入移相器进行移相。
在一些示例中，探针7材质为铜，探针7直径20um，探针7外部包覆聚四氟乙烯厚度为70um。第一介质基板021可以为印刷电路板(PCB板)。
在一些示例中，继续参照图11，在第一介质基板021靠近移相器的一侧还可以设置第一参考电极022层，且在第一参考电极022对应探针7的位置设置第一开口023。其中，一个第一开口023和一个第二开口在第一介质基板021上的正投影重叠，例如：第一开口023和第二开口一一对应设置。
在一些示例中，图12为图11的天线的第一辐射贴片02与探针7连接位置的示意图；如图12所示，无论第一辐射贴片02采用上述任意一种第一辐射贴片02，探针7与第一辐射贴片02的连接节点为第一节点P0；第一辐射贴片02第一边S1、第二边S2、第三边S3、第四边S4的延长线所限定出的虚拟四边形的中心为第一中心O1。第一节点P0和第一中心O1之间具有 一定的第一距离L1。例如：第一距离L1为1.59mm左右。需要说明的是，探针7在贴片不同位置，会导致天线阻抗发生变化。例如：第一节点P0与第一中心O1的连线的延伸方向为所述第二方向Y。也即，如图12所示，第一节点P0相较于第一中心O1在第二方向Y上下移。
由于液晶移相器利用液晶分子的各向异性，随所施加的外界电场变化液晶分子发生空间转动，使等效介电常数和等效损耗角正切发生变化，从而使电磁波的相位和幅度发生变化。通过控制施加的电场强度(电压大小)，可准确控制相位。但是液晶分子的介电常数和损耗角正切是温度的函数，随温度的变化而发生大幅度变化，造成液晶移相器的性能存在较大的温漂特性，这对于相控阵天线系统是不可接受的。因此本公开实施例还提供一种天线，该天线可以包括上述任一天线架构，在上述结构的基础上该天线增加了温度控制系统。具体结合下述示例进行具体说明。
第一种示例：图13为本公开实施例的天线的第一种示例的结构示意图；如图13所示，在该天线的相位调整层靠近辐射层和/或馈电层的一侧设置有温控单元层，该温控单元层被配置为调节所述相位调整层的温度，以调节所述天线的工作温度。图13仅以相位调整层靠近辐射层和相位调整层靠近馈电层的一侧均设置有温控单元层为例。为了便于描述，将相位调整层靠近辐射层一侧温控单元层设置为第一温控单元层81，相位调整层靠近馈电层一侧温控单元层设置为第二温控单元层82。
在一些示例中，第一温控单元层81和第二温控层300均可以中设置有多个流道811，用于容纳工质流动。在天线的工作温度过高或过低时，可以驱动一定温度的工质流入第一温控单元层81和第二温控单元层82中的流道811，由于第一温控单元层81和第二温控单元层82紧靠移相器设置，因此可以通过工质调节移相器的温度。具体地，第一温控单元层81和第二温控层300可以为一导热材料制成的整层结构，例如可以采用金属，若采用强度较大的材料制成第一温控单元层81和第二温控单元层82的基材，还可以给天线提供支撑力。第一温控单元层81和第二温控单元层82的形状紧贴移相器的上下表面，由于接触表面的位置吸收的热量最多，称之为第一温控单元 层81和第二温控单元层82的冷头，再在整层结构中开设多个流道811。
进一步的，该天线还可以包括循环装置9，循环装置9连接第一温控单元层81和第二温控单元层82的各个流道811，用于驱动工质循环流动。在一些示例中，循环装置9可以包括工质驱动单元和工质温控单元，工质驱动单元用于驱动工质流动，例如可以为水冷泵、电机等，工质温控单元用于控制工质的温度，具有加热、制冷、温控功能，能够控制工质的温度恒定，例如恒定在25℃±0.5℃之间。其中，循环装置9可以设置在壳体5外。
进一步的，当辐射层包括上述的第一介质基板021时，第一介质基板021采用PCB板，第二温控单元层82中的流道811可采用使用导热胶贴敷在PCB板上。当馈电层包括波导馈电网络时，第一温控单元层81可以与波导馈电网络同层设置，且二者在第二介质基板上的正投影无重叠。第一温控单元层81的流道811可采用机床切削洗加工半流道811切片再进行2个半流道811键合的方式获得。其中，液体工质优先比热容最大的纯水。
第二种示例：图14为本公开实施例的天线的第二种示例的结构示意图；如图14所示，该该种示例与第一种示例不同的是，其中的第一温控单元层81和第二温控单元层82可以包括电加热片和/或半导体制冷片812。第一温控单元层81和第二温控单元层82可以具有多种结构及排布方式，例如，第一温控单元层81和第二温控单元层82均为电加热片，具体可以为电阻丝，可以围绕第二开口211及传输线11的外围排布，可以直线排布，也可以呈螺旋型排布等，在此不做限定。电阻丝的材料可以采用高阻材料，例如氧化铟锡等，在此不做限定。
在一些示例中，电加热片812可使用电阻丝加热片和PTC加热片，或者直接把加热电阻如ITO材料制作在液晶移相器背面；半导体制冷片812(利用半导体材料特有的Peltier效应)可使用碲化铋基半导体材料如P型Bi 2Te 3-Sb 2Te 3或N型Bi 2Te 3-Bi 2Se 3。
进一步的，本公开实施例提供的天线还可以包括多个测温单元813，多 个测温单元813设置在相位调整层3的多个移相器的至少部分移相器中，且可以设置在该部分移相器的每个移相器的第一基板的一侧和/或第二基板的一侧，即可以设置在第一基板和第二基板的任一者靠近或远离可调电介质层一侧，测温单元用于检测移相器的工作温度，测温单元例如可以为热敏电阻，热电偶等。
在一些示例中，本公开实施例提供的天线还可以包括控制单元100，控制单元100连接测温单元和第一温控单元层81和第二温控单元层82，控制单元100可以根据测温单元反馈的移相器的工作温度，控制第一温控单元层81和第二温控单元层82调节移相器的温度。例如：测温单元813实时测量移相器附近的温度，当检测到某个或某几个测温单元813偏低时反馈给控制单元100，控制单元100控制温度异常点附近的电加热片812进行加热升温，直至温度恢复到正常工作温度为止，停止加热；当检测到某个或某几个测温单元813偏低时反馈给控制单元100，控制单元100控制温度异常点附近的半导体制冷片812进行制冷降温，直至温度恢复到正常工作温度为止，停止制冷。
第三种示例：图15为本公开实施例的天线的第三种示例的结构示意图；如图15所示，该种示例与第一种示例和第二种示例不同，该天线通过安装在壳体5上的风控装置进行天线的温度调节。具体的，天线壳体5包括至少包括相对设置的第一侧板和第二侧板；在第一侧边上设置有第一风控装置201，在第二侧板上设置有第二风控装置202；第一风控装置201被配置为将环境中的空气导入壳体5内部，第二风控装置202被配置为将壳体5内部的空气导出壳体5。
具体的，第一风控装置201和第二风控装置202均可以为风扇。如图15所示，在天线壳体5的两侧各开2个口，在口处安装风扇，左侧风扇自天线壳体5外侧将环境中的空气吸入天线壳体5内部，右侧风扇将天线壳体5内部的空气吸出排到环境中。当移相器的温度高于正常工作温度时，控制 系统打开风扇电源，以快速流动的空气为换热媒质，将天线系统内的热量搬运到空气中去，使移相器的温度维持在正常工作的温度区间。另外，该实施例可以结合热泵技术，在天线温度低于正常工作温度时，控制系统启动热泵，将环境中的热量进行收集(产生过热空气)然后通过风扇吹入天线壳体5内，使天线内部温度上升直至正常工作温度，然后控制系统关闭热泵电源，关闭风扇电源。
第四种示例：图16为本公开实施例的天线的第四种示例的结构示意图；如图16所示，该种示例与第三种示例不同的是，将温控层300设置壳体5的外壁上。其中，温控层300可以为PI/Al/Al 2O 3复合保温薄膜。天线非辐射面的表面(也即壳体5的四周和底面)，包覆一层PI/Al/Al 2O 3复合薄膜，该复合膜具有保温作用。第一层PI(聚酰亚胺)膜厚度50um～125um，作为衬底，在其上真空磁控溅射镀100nm～1um的金属Al膜，然后在其上再真空磁控溅射镀50nm～300nm的Al 2O 3膜(Al 2O 3作为Al膜的防氧化层)。Al薄膜表面的发射率极低，可防止天线内部的热量通过热辐射的方式发射到环境中；同时Al薄膜表面对红外和可见光具有极高的反射率，可将射向天线壳体5的太阳光、环境中的热辐射(红外线)反射回环境中。这样一层复合薄膜起到保温作用(天线内部的热量不散失到环境中，环境中的热量不能轻易传递到天线内部)。
当然，在该种示例中还可以结合上述三种示例中的任一结构对天线的温度进行控制。在此不再重复描述。
第二方面，本公开实施例还提供一种电子设备，该电子设备中可以包括天线。
本公开实施例提供的天线还包括收发单元、射频收发机、信号放大器、功率放大器、滤波单元。该天线可以作为发送天线，也可以作为接收天线。其中，收发单元可以包括基带和接收端，基带提供至少一个频段的信号，例如提供2G信号、3G信号、4G信号、5G信号等，并将至少一个频段的信号 发送给射频收发机。而天线中的天线接收到信号后，可以经过滤波单元、功率放大器、信号放大器、射频收发机的处理后传输给首发单元中的接收端，接收端例如可以为智慧网关等。
进一步地，射频收发机与收发单元相连，用于调制收发单元发送的信号，或用于解调天线接收的信号后传输给收发单元。具体地，射频收发机可以包括发射电路、接收电路、调制电路、解调电路，发射电路接收基底提供的多种类型的信号后，调制电路可以对基带提供的多种类型的信号进行调制，再发送给天线。而天线接收信号传输给射频收发机的接收电路，接收电路将信号传输给解调电路，解调电路对信号进行解调后传输给接收端。
进一步地，射频收发机连接信号放大器和功率放大器，信号放大器和功率放大器再连接滤波单元，滤波单元连接至少一个天线。在天线进行发送信号的过程中，信号放大器用于提高射频收发机输出的信号的信噪比后传输给滤波单元；功率放大器用于放大射频收发机输出的信号的功率后传输给滤波单元；滤波单元具体可以包括双工器和滤波电路，滤波单元将信号放大器和功率放大器输出的信号进行合路且滤除杂波后传输给天线，天线将信号辐射出去。在天线进行接收信号的过程中，天线接收到信号后传输给滤波单元，滤波单元将天线接收的信号滤除杂波后传输给信号放大器和功率放大器，信号放大器将天线接收的信号进行增益，增加信号的信噪比；功率放大器将天线接收的信号的功率放大。天线接收的信号经过功率放大器、信号放大器处理后传输给射频收发机，射频收发机再传输给收发单元。
在一些示例中，信号放大器可以包括多种类型的信号放大器，例如低噪声放大器，在此不做限制。
在一些示例中，本公开实施例提供的天线还包括电源管理单元，电源管理单元连接功率放大器，为功率放大器提供用于放大信号的电压。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而 言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (16)

  1. 一种天线，其包括馈电层、相位调整层和辐射层；其中，
    所述馈电层，被配置为将微波信号传输给所述相位调整层；
    所述相位调整层，被配置为按照预设的移相量对所述微波信号进行移相；
    所述辐射层，被配置为将被所述相位调整层移相后的所述微波信号进行辐射；所述辐射层包括至少一个第一辐射贴片。
  2. 根据权利要求1所述的天线，其中，所述第一辐射贴片包括沿第一方向相对设置的第一边和第二边，沿第二方向相对设置的第三边和第四边；所述第一辐射贴片还包括第五边；所述第五边连接在以下位置至少之一：
    所述第一边的第一端和所述第三边的第一端之间；
    所述第一边的第二端和所述第四边的第一端之间；
    所述第二边的第一端和所述第三边的第二端之间；
    所述第二边的第二端和所述第四边的第二端之间。
  3. 根据权利要求2所述的天线，其中，当所述第五边连接在所述第一边的第一端和所述第三边的第一端之间时，所述第一边的延长线和所述第三边的延长线的交点为第一交点，所述第一交点到所述第一边的第一端的距离与所述第一交点到所述第三边的第一端的距离相等；
    当所述第一边的第二端和所述第四边的第一端之间时，所述第一边的延长线与所述第四边的延长线的交点为第二交点，所述第二交点到所述第一边的第二端的距离与所述第二交点到所述第四边的第一端的距离相等；
    当所述第二边的第一端和所述第三边的第二端之间时，所述第二边的延长线与所述第三边的延长线的交点为第三交点，所述第三交点到所述第二边的第一端的距离与所述第三交点到所述第三边的第二端的距离相等；
    当所述第二边的第二端和所述第四边的第二端之间时，所述第二边的延长线与所述第四边的延长线的交点为第四交点，所述第四交点到所述第二边 的第二端的距离与所述第四交点到所述第四边的第二端的距离相等。
  4. 根据权利要求1-3中任一项所述的天线，其中，所述相位调整层包括至少一个所述移相器，所述移相器的第一传输端与所述馈电层的一个第二馈电端口电连接；所述移相器的第二传输端与一个所述第一辐射贴片电连接；
    所述辐射层还包括第一介质基板和至少一个探针，所述第一辐射层设置在所述第一介质基板背离所述相位调整层的一侧；一个所述探针电连接一个所述第一辐射层，且由所述探针贯穿所述第一介质基板指向所述移相器的第二传输端。
  5. 根据权利要求4所述的天线，其中，所述第一辐射贴片包括沿第一方向相对设置的第一边和第二边，以及沿第二方向相对设置的第三边和第四边；所述第一边、所述第二边、所述第三边、所述第四边的延长线所限定出的虚拟四边形的中心为第一中心，所述探针与所述第一辐射贴片的连接节点为第一节点；所述第一节点和所述第一中心之间具有一定的第一距离。
  6. 根据权利要求5所述的天线，其中，所述第一节点与所述第一中心的连线的延伸方向为所述第二方向。
  7. 根据权利要求4所述的天线，其中，还包括设置在所述第一介质基板和相位调整层之间的第一参考电极层；且所述第一参考电极层具有多个第一开口，所述探针与所述第一开口对应设置。
  8. 根据权利要求1-3中任一项所述的天线，其中，所述相位调整层包括至少一个移相器，所述移相器包括相对设置的第一基板、第二基板和设置在所述第一基板和所述第二基板之间的可调电介质层；在所述第一基板和所述第二基板中至少一者背离所述可调电介质层的一侧设置有温控单元层；所述温控单元层，被配置为调节所述相位调整层的温度，以调节所述天线的工作温度。
  9. 根据权利要求8所述的天线，其中，所述温控单元层中设置有多个流道，用于容纳工质流动。
  10. 根据权利要求9所述的天线，其中，还包括：循环装置，连接所述 流道；
    所述循环装置包括工质驱动单元和工质温控单元，所述工质驱动单元用于驱动所述工质流动，所述工质温控单元用于控制所述工质的温度。
  11. 根据权利要求8所述的天线，其中，所述馈电层包括波导功分馈电网络4；设置在所述第一基板背离可调电介质层一侧的所述温控单元层，与所述波导功分馈电网络4同层设置，且所述波导功分馈电网络在所述第一介质基板上的正投影无重叠。
  12. 根据权利要求8所述的天线，其中，所述温控单元层包括电加热片和/或半导体制冷片。
  13. 根据权利要求8所述的天线，其中，至少部分所述移相器的所述第一基板和/或所述第二基板背离所述可调电介质层的一侧还设置有多个测温单元，用于检测所述移相器的工作温度。
  14. 根据权利要求1-3中任一项所述的天线，其中，所述天线包括壳体，所述壳体包括至少包括相对设置的第一侧板和第二侧板；在所述第一侧边上设置有第一风控装置，在所述第二侧板上设置有第二风控装置；所述第一风控装置被配置为，将环境中的空气导入所述壳体内部，所述第二风控装置被配置为，将所述壳体内部的空气导出壳体。
  15. 根据权利要求1-3中任一项所述的天线，其中，所述天线包括壳体，在所述壳体外壁设置有温控层。
  16. 一种电子设备，包括权利要求1-15中任一项所述的天线。
PCT/CN2022/090104 2022-04-29 2022-04-29 天线及电子设备 WO2023206310A1 (zh)

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CN108493592A (zh) * 2018-05-03 2018-09-04 京东方科技集团股份有限公司 微带天线及其制备方法和电子设备
CN109648971A (zh) * 2019-01-09 2019-04-19 上海卫星工程研究所 一种空间用热控薄膜
JP2020191625A (ja) * 2019-05-17 2020-11-26 シャープ株式会社 走査アンテナおよびその製造方法
CN113659342A (zh) * 2021-08-11 2021-11-16 上海天马微电子有限公司 一种移相器及天线
CN215578989U (zh) * 2021-06-23 2022-01-18 北京京东方技术开发有限公司 移相器和天线
CN114335932A (zh) * 2021-12-29 2022-04-12 天马微电子股份有限公司 一种移相器及天线

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CN108493592A (zh) * 2018-05-03 2018-09-04 京东方科技集团股份有限公司 微带天线及其制备方法和电子设备
CN109648971A (zh) * 2019-01-09 2019-04-19 上海卫星工程研究所 一种空间用热控薄膜
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CN215578989U (zh) * 2021-06-23 2022-01-18 北京京东方技术开发有限公司 移相器和天线
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