WO2023200624A1 - Dispositifs d'éléments localisés à rf en 2d et en 3d pour un système à rf dans des substrats de verre photo-actifs en boîtier - Google Patents

Dispositifs d'éléments localisés à rf en 2d et en 3d pour un système à rf dans des substrats de verre photo-actifs en boîtier Download PDF

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Publication number
WO2023200624A1
WO2023200624A1 PCT/US2023/017311 US2023017311W WO2023200624A1 WO 2023200624 A1 WO2023200624 A1 WO 2023200624A1 US 2023017311 W US2023017311 W US 2023017311W WO 2023200624 A1 WO2023200624 A1 WO 2023200624A1
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WIPO (PCT)
Prior art keywords
glass
photodefinable
package
glass substrate
integrated
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PCT/US2023/017311
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English (en)
Inventor
Jeb H. Flemming
Jeff A. Bullington
Kyle Mcwethy
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3D Glass Solutions, Inc.
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Publication date
Priority claimed from US17/717,743 external-priority patent/US20220239270A1/en
Application filed by 3D Glass Solutions, Inc. filed Critical 3D Glass Solutions, Inc.
Publication of WO2023200624A1 publication Critical patent/WO2023200624A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/04—Compositions for glass with special properties for photosensitive glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0018—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents
    • C03C10/0027—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents containing SiO2, Al2O3, Li2O as main constituents
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/10—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the liquid phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/007—Other surface treatment of glass not in the form of fibres or filaments by thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/25—Metals
    • C03C2217/251—Al, Cu, Mg or noble metals

Definitions

  • the present invention relates in general to the field of RF lumped element devices for RF system in a package photoactive glass substrates.
  • Photosensitive glass structures have been suggested for a number of micromachining and microfabrication processes such as integrated electronic elements in conjunction with other elements systems or subsystems.
  • Silicon microfabrication of traditional glass is expensive and low' yield while injection modeling or embossing processes produce inconsistent shapes.
  • Silicon microfabrication processes rely on expensive capital equipment; photolithography and reactive ion etching or ion beam milling tools generally cost in excess of one million dollars each and require an ultra-clean, high-production silicon fabrication facility costing millions to billions more.
  • Injection molding and embossing are less costly methods of producing a three dimensional shapes but generate defects within the transfer or have differences due to the stochastic curing process.
  • Ideal inductors would have zero resistance and zero capacitance. But, real inductors have “parasitic” resistance, inductance and capacitance.
  • inductor capacitance is called “inter-winding capacitance” based on the assumption that it is the result of charge separation between insulated coil windings.
  • inter-winding capacitance based on the assumption that it is the result of charge separation between insulated coil windings.
  • capacitance between the coil and the ground plane is also part of the measurement.
  • the distance of the coil from the measurement ground plane and the effective dielectric constant of the measurement substrate affects the capacitance to ground.
  • SRF self-resonant frequency
  • RF and/or microwave filters are made up of one or more coupled resonators and several different technologies can be used to make resonators/lilters.
  • the majonty of the resonators/filters fall into one of three general categories: Lumped-Element, Microstrip Transmission Lines, and Coaxial Waveguide.
  • Lumped-element or inductor capacitor (LC) filters are the simplest resonator structure used in RF and microwave filters and other devices, e g., lumped-element circuit consisting of parallel or series inductors and capacitors.
  • An advantage of lumped-element filters/devices is that they can be very compact but the disadvantages are that they have a low quality factor, large level of distortion/noise and relatively poor performance. As such lumped-element devices are not considered a viable option in RF/Microwave applications.
  • Lumped element equivalent circuit (EC) models consist of basic circuit elements (L, C, or R) with the associated parasitics denoted by subscripts. Accurate computer-aided design of MICs and MMICs requires a complete and accurate characterization of these components. This requires comprehensive models including the effect of ground plane, fringing fields, proximity effects, substrate material and thickness, conductor thickness, and associated mounting techniques and applications. Thus, an EC representation of a lumped element with its parasitics and their frequency-dependent characteristics is essential for accurate element modeling. An EC model consists of the circuit elements necessary to fully describe its response, including resonances, if any. Models can be developed using analytical, electromagnetic simulation, and measurement based methods. The early models of lumped elements were developed using analytical semiempirical equations.
  • EC model parameters are extracted by computer optimization, which correlates the measured de and S-parameter data (one- or two-port data) up to 26 or 40 GHz depending on the application.
  • the accuracy of the model parameter values can be as good as the measurement accuracy by using recently developed on-wafer calibration standards and techniques.
  • the equivalent circuit models are valid mostly up to the first parallel resonant frequency (fres).
  • a design is involved with harmonics, for example, a power amplifier with second and third harmonic terminations at the output, one requires either EM simulated data working up to the highest design frequency or a more complex model taking into account higher order resonances.
  • the resistance of LEs is quite different from their de values due to the skin effect.
  • EM fields penetrate a conductor only a limited depth along its cross section.
  • the distance in the conductor over which the fields decrease to 1 /e (about 36.9%) of the values at the surface is called depth of penetration, or skin depth.
  • This effect is a function of frequency with the penetration depth decreasing with increasing frequency.
  • the flow of RF current is limited to the surface only, resulting in higher RF surface resistance than the de value. This effect is taken into account during accurate modeling of the resistive loss in the component.
  • Microstrip transmission lines also known as striplines, can make good resonators/filters and offer a better compromise in terms of size and performance than lumped element filters.
  • the processes used to manufacture microstrip circuits is very similar to the processes used to manufacture printed circuit boards using a precision thin-film process but require using quartz, ceramic, sapphire substrates and lower resistance metals such as gold to obtain the performance required for low power/loss RF applications.
  • Coaxial Waveguide (CW) filters provide higher Q factor than planar transmission lines, and are used in high performance RF applications.
  • the coaxial resonators may make use of high-dielectric constant materials to reduce their size.
  • the size of CW filter scale inversely to the frequency the size and can reach to less than 2 cm 2 at frequencies above 30 GHz on a ceramic substrate. The combination of a ceramic substrate and the physical size prevents the filter makes these filters expensive and large relative to other RF filters from and as such are not generally used in commercial portable, compact RF products.
  • SAW surface acoustic wave
  • BAW bulk acoustic wave
  • SAW and BAW exhibit decreased signal to noise ratios as the frequency of operation exceeds the speed of sound in the piezoelectric material.
  • Single crystal BAW devices have been shown to have higher performance but also suffer from a dramatic collapse of the signal to noise when the frequencies exceed the speed of sound of the piezoelectric material.
  • the speed of sound of the piezoelectric material used in SAW and BAW filters limits their application to frequencies less than 3 GHz.
  • the present invention includes a method for creating a system in a package with integrated lumped element devices formed as a system-in-package (SiP) in or on photo-definable glass comprising the steps of: masking a design layout comprising one or more structures to form one or more electrical components on or in a photosensitive glass substrate; exposing at least one portion of the photosensitive glass substrate to an activating energy source; heating the photosensitive glass substrate for at least ten minutes above its glass transition temperature; cooling the photosensitive glass substrate to transform at least a part of the exposed glass to a cry stalline material to form a glass-crystalline substrate; etching the glass-crystalline substrate with an etchant solution to form one or more channels in the device, wherein the glass-crystalline substrate adjacent to the trenches, which may optionally be converted to a ceramic phase; and depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate exposed during the etching step to enable electroplating of copper to fill
  • SiP system-in
  • the method further comprises forming an isolator with integrated lump element devices is in a SiP. In another aspect, the method further comprises fomring a circulator with integrated lump element devices in a SiP. In another aspect, the method further comprises forming an RF filter with integrated lump element devices in a SiP. In another aspect, the method further comprises forming at least one of a low pass, high pass filter, notch filter, band pass filter, transformer, circulator, isolator, with integrated lump element devices in a SiP. In another aspect, the method further comprises forming a power combiner, a power splitter RF Circuit in or on the photo-definable glass substrate.
  • the method further comprises forming an SiP RF Circuit that eliminates at least 30% of the RF parasitic signal loss when compared to an equivalent surface mounted device. In another aspect, the method further comprises forming an SiP RF Circuit that eliminates at least 35% of the RF parasitic signal loss when compared to an equivalent surface mounted device (the loss associated with the packaging a mount elements to a substrate). In another aspect, the method further comprises forming an SiP RF Circuit that eliminates at least 50% of the RF parasitic signal loss when compared to an equivalent surface mounted device.
  • the method further comprises forming one or more RF Filters, RF Circulators, RF Isolators, Antenna, Impedance Matching Elements, 50 Ohm Termination Elements, Integrated Ground Planes, RF Shielding Elements, EMI Shielding Elements, RF Combiners, RF Splitters, Transformers, Switches, power splitters, power combiners, and/or Diplexors.
  • Another embodiment of the present invention includes a package lumped element device mount to a system-in-package (SiP) in or on photo-definable glass made by the method described hereinabove.
  • the device is an isolator with integrated lump element devices and is in a SiP.
  • the device is a circulator with integrated lump element devices and is in a SiP.
  • the device is an RF filter with integrated lump element devices and is in a SiP.
  • the device is at least one of a low pass, high pass filter, notch filter, band pass filter, transformer, circulator, isolator, with integrated lump element devices and is in a SiP.
  • the device is a power combiner, a power splitter RF Circuit in or on the photo-definable glass substrate.
  • the device is a SiP RF Circuit that eliminates at least 30% of the RF parasitic signal loss when compared to an equivalent surface mounted device.
  • the device is a SiP RF Circuit that eliminates at least 35% of the RF parasitic signal loss when compared to an equivalent surface mounted device.
  • the method further comprises forming an SiP RF Circuit that eliminates at least 50% of the RF parasitic signal loss when compared to an equivalent surface mounted device.
  • the device is one or more RF Filters, RF Circulators, RF Isolators, Antenna, Impedance Matching Elements, 50 Ohm Termination Elements, Integrated Ground Planes, RF Shielding Elements, EMI Shielding Elements, RF Combiners, RF Splitters, Transformers, Switches, power splitters, power combiners, and/or Diplexors.
  • the present invention includes a method for creating a system in a package with integrated lumped element devices formed as a system-in-package (SiP) in or on photo-definable glass comprising the steps of: masking a design layout comprising one or more structures to form one or more electrical components on or in a photosensitive glass substrate; transforming at least a part of the exposed glass to a crystalline material to form a glass-crystalline substrate; etching the glass-crystalline substrate with an etchant solution to form one or more channels in the device, wherein the glass-crystalline substrate adjacent to the trenches, which may optionally be converted to a ceramic phase; and depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate exposed during the etching step to enable electroplating of copper to fill the trenches and deposit on the surface of the photodefinable glass, wherein the integrated lumped element devices reduces the parasitic noise and losses by at least 25% from a package lump
  • the method further comprises forming an isolator with integrated lump element devices is in a SiP. In another aspect, the method further comprises forming a circulator with integrated lump element devices in a SiP. In another aspect, the method further comprises forming an RF filter with integrated lump element devices in a SiP. In another aspect, the method further comprises forming at least one of a low pass, high pass filter, notch filter, band pass filter, transformer, circulator, isolator, with integrated lump element devices in a SiP. In another aspect, the method further comprises forming a power combiner, a power splitter RF Circuit in or on the photo-definable glass substrate.
  • the method further comprises forming an SiP RF Circuit that eliminates at least 30% of the RF parasitic signal loss when compared to an equivalent surface mounted device. In another aspect, the method further comprises forming an SiP RF Circuit that eliminates at least 35% of the RF parasitic signal loss when compared to an equivalent surface mounted device. In another aspect, the method further comprises forming an SiP RF Circuit that eliminates at least 50% of the RF parasitic signal loss when compared to an equivalent surface mounted device.
  • the method further comprises forming one or more RF Filters, RF Circulators, RF Isolators, Antenna, Impedance Matching Elements, 50 Ohm Termination Elements, Integrated Ground Planes, RF Shielding Elements, EMI Shielding Elements, RF Combiners, RF Splitters, Transformers, Switches, power splitters, power combiners, and/or Diplexors.
  • Another embodiment of the present invention includes a package lumped element device mount to a system-in-package (SiP) in or on photo-definable glass made by the method described hereinabove.
  • the device is an isolator with integrated lump element devices and is in a SiP.
  • the device is a circulator with integrated lump element devices and is in a SiP.
  • the device is an RF filter with integrated lump element devices and is in a SiP.
  • the device is at least one of a low pass, high pass filter, notch filter, band pass filter, transformer, circulator, isolator, with integrated lump element devices and is in a SiP.
  • the device is a power combiner, a power splitter RF Circuit in or on the photo-definable glass substrate.
  • the device is a SiP RF Circuit that eliminates at least 30% of the RF parasitic signal associated with the packaging a mount elements to a substrate.
  • the device is a SiP RF Circuit that eliminates at least 35% of the RF parasitic signal associated with the packaging a mount elements to a substrate.
  • the device is one or more RF Filters, RF Circulators, RF Isolators, Antenna, Impedance Matching Elements, 50 Ohm Termination Elements, Integrated Ground Planes, RF Shielding Elements, EMI Shielding Elements, RF Combiners, RF Splitters, Transformers, Switches, power splitters, power combiners, and/or Diplexors.
  • Another embodiment of the invention includes a method for creating a system-in- package formed in or on photodefinable glass including: providing a photodefinable glass substrate, masking a design layout including one or more structures to form one or more integrated lumped element devices as the system-in-package on or in a photodefinable glass substrate; transforming at least a portion of the photodefinable glass substrate to a crystalline material to form a glass-crystalline substrate; etching the glass-crystalline substrate with an etchant solution to form one or more channels in the glass-crystalline substrate; depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate exposed during the etching step to enable electroplating of copper to fill the one or more channels and to deposit the copper on the surface of the photodefinable glass to form the one or more integrated lumped element devices; and electroplating the copper to fill the one or more channels and to deposit copper on the surface of the photodefinable glass to form the one or more integrated lump
  • the photodefinable glass substrate includes silica, lithium oxide, aluminum oxide, and cerium oxide.
  • the method further includes converting the glass-crystalline substrate adjacent to the one or more channels to a ceramic phase.
  • the step of transforming at least a portion of the photodefinable glass substrate includes: exposing at least a portion of the photodefinable glass substrate to an activating energy source; heating the photodefinable glass substrate for at least ten minutes above a glass transition temperature thereof; and cooling the photodefinable glass substrate to transform the at least a portion of the exposed photodefinable glass substrate to a crystalline matenal to form the glass-crystalline substrate.
  • an anisotropic- etch ratio of an exposed portion to an unexposed portion is at least 30: 1.
  • the one or more integrated lumped system elements form an RF circuit that eliminates at least 25%, 30%, 35%, 40%, 45%, or 50% of an RF parasitic signal loss when compared to the equivalent surface-mounted device that is not on or in photodefinable glass.
  • the one or more integrated lumped element devices form one or more isolators, one or more circulators, or one or more radio frequency (RF) filters including a low-pass filter, a high-pass filter, a notch filter, or a band-pass filter.
  • RF radio frequency
  • the one or more integrated lumped system elements form one or more devices including an antenna, an impedance matching element, a 50-ohm termination element, an integrated ground planes, an RF shielding element, an EMI shielding element, an RF combiner, an RF splitter, a power combiner, a power splitter, a transformer, a switch, or a diplexer.
  • Another embodiment of the invention includes a system-in-package made by a method including: providing a photodefinable glass substrate; masking a design layout including one or more structures to form one or more integrated lumped element devices as the system-in- package on or in a photodefinable glass substrate; transforming at least a portion of the photodefinable glass substrate to a crystalline material to form a glass-crystalline substrate; etching the glass-crystalline substrate with an etchant solution to form one or more channels in the glass-crystalline substrate: depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate exposed during the etching step to enable electroplating of copper to fill the one or more channels and to deposit the copper on the surface of the photodefinable glass to form the one or more integrated lumped element devices; and electroplating the copper to fill the one or more channels and to deposit copper on the surface of the photodefinable glass to form the one or more integrated lumped element devices.
  • the photodefinable glass substrate includes silica, lithium oxide, aluminum oxide, and cerium oxide.
  • the method further includes converting the glass-crystalline substrate adjacent to the one or more channels to a ceramic phase.
  • the step of transforming at least a portion of the photodefinable glass substrate includes: exposing at least a portion of the photodefinable glass substrate to an activating energy source; heating the photodefinable glass substrate for at least ten minutes above a glass transition temperature thereof; and cooling the photodefinable glass substrate to transform the at least a portion of the exposed photodefinable glass substrate to a cry stalline material to form the glass-crystalline substrate.
  • an anisotropic-etch ratio of an exposed portion to an unexposed portion is at least 30:1.
  • the one or more integrated lumped system elements form an RF circuit that eliminates at least 25%, 30%, 35%, 40%, 45%, or 50% of an RF parasitic signal loss when compared to the equivalent surface-mounted device that is not on or in photodefinable glass.
  • the one or more integrated lumped element devices form one or more isolators, one or more circulators, or one or more radio frequency (RF) filters including a low-pass filter, a high-pass filter, a notch filter, or a band-pass filter.
  • RF radio frequency
  • the one or more integrated lumped system elements form one or more devices including an antenna, an impedance matching element, a 50-ohm termination element, an integrated ground planes, an RF shielding element, an EMI shielding element, an RF combiner, an RF splitter, a power combiner, a power splitter, a transformer, a switch, or a diplexer.
  • Another embodiment of the invention includes a photodefinable glass substrate; and one or more integrated lumped element devices comprising one or more resistors, one or more capacitors, one or more inductors, or a combination thereof formed on or in the photodefinable glass substrate as a system-in-package.
  • the photodefinable glass substrate comprises silica, lithium oxide, aluminum oxide, and cerium oxide.
  • the one or more integrated lumped element devices form one or more isolators, one or more circulators, or one or more radio frequency (RF) filters comprising a low-pass filter, a high-pass filter, a notch filter, or a band-pass filter.
  • RF radio frequency
  • the one or more integrated lumped system elements form one or more devices comprising an antenna, an impedance matching element, a 50-ohm termination element, an integrated ground planes, an RF shielding element, an EMI shielding element, an RF combiner, an RF splitter, a power combiner, a power splitter, a transformer, a switch, or a diplexer.
  • the one or more integrated lumped system elements form an RF circuit that eliminates at least 25%, 30%, 35%, 40%, 45%, or 50% of an RF parasitic signal loss when compared to an equivalent surface-mounted device that is not on or in photodefmable glass.
  • FIG. 1A is a graph that shows the impact of the parasitic signals/losses capacitance on the performance of a capacitor in a system in a package (SiP) vs a Surface-Mount Technology (SMT) of the present invention.
  • FIG. IB is a graph that shows the impact of the parasitic signals/losses on the performance of a inductor in a SiP vs an SMT of the present invention.
  • FIG. 2A is a graph that shows the performance of a 30 GHz Ban Pass filter and RF distortions in a Surface Mount Package on a PCB of the present invention.
  • FIG. 2B is a graph that shows the performance of a 28GHz SiP Ban Pass filter of the present invention.
  • FIG. 2C is a graph that shows the performance of the SiP based 2.5 GHz Low Pass Filter of the present invention.
  • FIG. 2D is an image of the SiP based 2.5 GHz Low Pass Filter of the present invention.
  • FIG. 3 A is a graph that shows the performance of the SiP based 19 GHz Band Pass Filter of the present invention.
  • FIG. 3B is an image of the SiP based 19 GHz Band Pass Filter of the present invention.
  • FIG. 4A is a graph that shows the performance of the SiP based 24 GHz Band Pass Filter of the present invention.
  • FIG. 4B is an image of the SiP based 24 GHz Band Pass Filter of the present invention.
  • FIG. 5 A is a graph that shows the performance of the SiP based 33 GHz Low Pass Filter of the present invention.
  • FIG. 5B shows the image of the SiP based 33 GHz Low Pass Filter of the present invention.
  • FIG. 6A is a graph that shows the performance of the SiP based 28 GHz Band Pass Filter of the present invention.
  • FIG. 6B shows the image of the SiP based 28 GHz Band Pass Filter of the present invention.
  • FIG. 7A is a graph that shows the performance of the SiP based 7 GHz Band Pass Filter of the present invention.
  • FIG. 7B shows the image of several SiP based 7 GHz Band Pass Filter of the present invention.
  • FIG. 8 is a graph that shows the insertion loss of SiP based Filters of the present invention.
  • FIG. 9 shows a Doherty Amplifier design including the lumped elements of the present invention.
  • FIG. 10 shows a power divider/combiner.
  • FIG. 11 shows a lumped element circulator when a termination resistor is connected to the circulator, it becomes an isolator.
  • FIG. 12 shows glass based SiP with integrated lumped element devices of the present invention.
  • the SiP is approximately 0.5 cm x 0.5 cm.
  • FIG. 13 shows a sampling of glass based SiPs with integrated lumped element devices of the present invention. Depending on the size of the SiP there can be a great number of SiPs on a single wafer.
  • FIGS. 14A-14F show a process of making devices using the present invention.
  • FIGS. 15A-15F show further processing steps for making a device using the present invention.
  • FIG. 16 shows a flowchart of a method embodiment of the invention. DETAILED DESCRIPTION OF THE INVENTION
  • the present invention eliminates the parasitic losses and signals associated with lumped element devices in the RF domain.
  • Lumped element devices or an array of lumped element devices consist of capacitors, inductors, and resistors to implement a wide number of electronic devices and functions including: filters (band-pass, band-stop, high-pass, notch, low-pass filter), circulators, antennas, power conditioners, power combiners, power splitters, matching networks, isolators and/or Doherty power amplifiers in a photo definable glass ceramic system in a system-in-a-package (SiP) for microwave and radiofrequency applications that eliminates or greatly reduce parasitic signals or losses.
  • filters band-pass, band-stop, high-pass, notch, low-pass filter
  • circulators antennas
  • power conditioners power combiners
  • power splitters power splitters
  • matching networks matching networks
  • the parasitic signals or losses are generated from the antenna effects combined with the inductance, capacitance and resistance from the packaging, solder bonding (ball grid), electronic connectors (wire), electrical bond pads and mounting elements that attach the packaged lumped element devices to the SiP.
  • the distorted signals or losses are transmitted to other RF devices on the printed circuit board or substrate.
  • Integrating lumped element devices into a photodefinable glass ceramic SiP enables the circuit to perform as designed and simulated through the entire RF spectrum.
  • These lumped element device structures consist of both the vertical as well as horizontal planes either separately or at the same time to form two or three-dimensional lumped element devices with design to device parity, lower loss, low signal distortion, reduced parasitic capacitance, reduced cost, and smaller physical size.
  • photosensitive glass structures have been suggested for a number of micromachining and microfabrication processes such as integrated electronic elements in conjunction with other elements systems or subsystems.
  • the present invention has advantages over silicon microfabrication of traditional glass that is expensive and low yield while injection modeling or embossing processes produce inconsistent shapes.
  • the present invention has additional advantages over silicon microfabrication processes that rely on expensive capital equipment; photolithography and reactive ion etching or ion beam milling tools that generally cost in excess of one million dollars each and require an ultra-clean, high- production silicon fabrication facility costing millions to billions more.
  • the present invention also overcomes the problems with injection molding and embossing that generate defects within the transfer or have differences due to the stochastic curing process.
  • the first self-resonant frequency of an inductor is the lowest frequency at which an inductor resonates with its self-capacitance.
  • the first resonance can be modeled by a parallel combination of inductance and capacitance.
  • SRF self-resonant frequency
  • APEX® Glass ceramic As a novel packaging and substrate material for semiconductors, RF electronics, microwave electronics, and optical imaging.
  • APEX® Glass ceramic is processed using first generation semiconductor equipment in a simple three step process and the final material can be fashioned into either glass, ceramic, or contain regions of both glass and ceramic.
  • the APEX® Glass ceramic enables the creation of an SiP that includes one or part of the following: easily fabricated high density vias, electronic devices including; Inductors, Capacitors, Resistors, Transmission Lines, Coax Lines, Antenna, Microprocessor, Memory, Amplifier, Transistors, matching networks, RF Filters, RF Circulators, RF Isolators, Impedance Matching Elements, 50 Ohm Termination Elements, Integrated Ground Planes, RF Shielding Elements, EMI Shielding Elements, RF Combiners, RF Splitters, Transformers, Switches, Multiplexors, and/or Diplexers.
  • FIG. 1 A shows test results for the same 3pF and 5pF capacitors.
  • One set of capacitors were integrated and tested on a glass SiP.
  • the other set of capacitors was packaged in a Surface-Mount Technology (SMT) and tested.
  • SMT Surface-Mount Technology
  • the resulting data showed that the SiP integrated capacitor had between 150% and 135% higher SRF compared to the same capacitors packaged SMT, thus significantly improving on the prior art.
  • the improvement in the performance is due to the removal of losses from bonding pads, ball bond, embedded leads, substrate and other parasitic effects associated with the SMT packaging.
  • FIG. IB shows the performance between two inductors (56nH and 95nH) measured in either SMT or integrated SiP.
  • SiP based Inductors have a 50% higher SRF than SMT parts due to the removal of parasitic losses or signals associated with capacitance generated by the pads of the SMT packaging.
  • integrated SiP components have a 50% higher SRF compared to the exact same part as an SMT.
  • the performance differences between the integrated SiP devices relative to the SMT devices are measured in dB, one can add the parasitic losses or signals associated with the use of a combination inductors and capacitors realized in filters, Doherty Amplifiers, circulators, isolators, antennas, power splitters, power combiners in addition to other RF/Microwave components used to make a system in a package. The combining of losses can be seen in FIGS. 2A to 2D.
  • FIG. 1 A shows the signal for a lumped element bandpass filter in the SMD package mounted on a printed circuit board based SiP.
  • FIG. IB shows the signal for the same lumped element bandpass filter integrated directly into the glass based SiP.
  • the normalized difference between the areas under performance curves of FIG. 1A and IB is approximately 200%. This shows that the use of RF lumped element device integrated directly into the SiP substrate reduces or eliminates the parasitic noise and losses by up to 200%, eliminating the losses, distortion/noise, parasitic signals and poor performance quality factor.
  • the SiP based lumped element devices can have capacitors with quality factors much greater than 80 with inductors with quality' factors much greater than 120.
  • the enhanced performance of lumped element devices that are integrated directly into the SiP have demonstrated dramatically improved functionality in RF/Microwave device that can now be coupled with small feature size.
  • the directly integrated lumped element based devices into or on to the SiP include but are not limited to: RF Filters, RF Circulators, RF Isolators, Antennas, Impedance Matching Elements, 50 Ohm Termination Elements, Integrated Ground Planes, RF Shielding Elements, EMI Shielding Elements, RF Combiners, RF Splitters, Transformers, Switches, power splitters, power combiners, and/or Diplexors.
  • These directly integrated lumped element devices on the SiP are connected with integrated circuits devices. These integrated circuits devices include but are not limited to: microprocessors, multiplexers, switches, amplifiers, and memories.
  • FIG. 3 A is a graph that shows the performance of the SiP based 19 GHz Band Pass Filter of the present invention.
  • FIG. 3B is an image of the SiP based 19 GHz Band Pass Filter of the present invention.
  • FIG. 4A is a graph that shows the performance of the SiP based 24 GHz Band Pass Filter of the present invention.
  • the present invention improved the signal by 150% and 135% for the SiP of the present invention versus SMT when measuring capacitance versus frequency.
  • FIG. 4B is a graph that shows the performance of the SiP based 24 GHz Band Pass Filter.
  • the present invention improved the signal by 50% using the SiP of the present invention when compared to SMT when measuring inductance versus frequency.
  • FIG. 5 A is a graph that shows the performance of the SiP based 33 GHz Low Pass Filter of the present invention.
  • FIG. 5B shows the image of the SiP based 33 GHz Low Pass Filter of the present invention.
  • FIG. 6A is a graph that shows the performance of the SiP based 28 GHz Band Pass Filter of the present invention.
  • FIG. 6B shows the image of the SiP based 28 GHz Band Pass Filter of the present invention.
  • FIG. 7A is a graph that shows the performance of the SiP based 7 GHz Band Pass Filter of the present invention.
  • FIG. 7B shows the image of several SiP based 7 GHz Band Pass Filter of the present invention.
  • FIG. 8 is a graph that shows the insertion loss of SiP based Filters of the present invention.
  • FIG. 9 shows a Doherty Amplifier design including the lumped elements that can be made using the present invention.
  • FIG. 10 shows a power divider/combiner that can be made using the present invention.
  • FIG. 11 shows a lumped element circulator when a termination resistor is connected to the circulator, it becomes an isolator and can be made using the present invention.
  • FIG. 12 shows glass based SiP with integrated lumped element devices of the present invention. The SiP is approximately 0.5 cm x 0.5 cm.
  • FIG. 13 shows a sampling of glass based SiPs with integrated lumped element devices of the present invention. Depending on the size of the SiP there can be a great number of SiPs on a single wafer.
  • FIG. 12 shows a sampling of glass based SiP with integrated lumped element devices of the present invention. Depending of size of the SiP there can be a great number of SiPs on a single wafer.
  • the APEXTM Glass wafer can be populated with over 500 SiP with the integrated lump element devices.
  • An SiP with a fully integrated lumped element device can be produced in photo- definable glasses having high temperature stability, good mechanical and electrical properties, and better chemical resistance than plastics and many metals.
  • FOTURAN® the only commercial photo-definable glass is FOTURAN®, made by Schott Corporation.
  • FOTURAN® comprises a hthium-aluminum-silicate glass containing traces of silver ions. When exposed to UV-light within the absorption band of cerium oxide, the cerium oxide acts as sensitizers, absorbing a photon and losing an electron that reduces neighboring silver oxide to form silver atoms, e.g.,
  • This heat treatment must be performed at a temperature near the glass transformation temperature (e.g., greater than 465°C. in air for FOTURAN®).
  • the crystalline phase is more soluble in etchants, such as hydrofluoric acid (HF), than the unexposed vitreous, amorphous regions.
  • etchants such as hydrofluoric acid (HF)
  • HF hydrofluoric acid
  • the crystalline regions of FOTURAN® are etched about 20 times faster than the amorphous regions in 10% HF, enabling microstructures with wall slopes ratios of about 20: 1 when the exposed regions are removed.
  • the shaped glass structure contains at least one or more, two or three- dimensional inductive device.
  • the inductive device is formed by making a series of connected loops to form a free-standing inductor.
  • the loops can be either rectangular, circular, elliptical, fractal or other shapes that that generate induction.
  • the patterned regions of the APEX® glass can be filled with metal, alloys, composites, glass or other magnetic media, by a number of methods including plating or vapor phase deposition.
  • the magnetic permittivity of the media combined with the dimensions and number of structures (loops, turns or other inductive elements) in the device provide the inductance of devices.
  • FOTURAN® is described in information supplied by Invenios (the U.S. supplier for FOTURAN®) is composed of silicon oxide (SiCE) of 75 to 85% by weight, lithium oxide (Li2O) of 7 to 11% by weight, aluminum oxide (AI2O3) of 3 to 6% by weight, sodium oxide (Na2O) of 1 to 2% by weight, 0.2-0.5% by weight antimony trioxide (St ⁇ CE) or arsenic oxide (AS2O3), silver oxide (Ag2O) of 0.05 to 0.15% by weight, and cerium oxide (CeCE) of 0.01 to 0.04% by weight.
  • SiCE silicon oxide
  • Li2O lithium oxide
  • AI2O3 aluminum oxide
  • Na2O sodium oxide
  • AS2O3 arsenic oxide
  • silver oxide (Ag2O) of 0.05 to 0.15% by weight
  • CeCE cerium oxide
  • APEX® Glass ceramic As used herein the terms “APEX® Glass ceramic”, “APEX glass” or simply “APEX” is used to denote one embodiment of the glass ceramic composition of the present invention.
  • the present invention provides a single material approach for the fabrication of optical microstructures with photo-definable APEX glass for use in imaging applications by the shaped APEX glass structures that are used for lenses and includes through-layer or inlayer designs.
  • the APEX® Glass composition provides three main mechanisms for its enhanced performance: (1) The higher amount of silver leads to the formation of smaller ceramic crystals which are etched faster at the grain boundaries, (2) the decrease in silica content (the main constituent etched by the HF acid) decreases the undesired etching of unexposed material, and (3) the higher total weight percent of the alkali metals and boron oxide produces a much more homogeneous glass during manufacturing.
  • the present invention includes a method for fabricating a glass ceramic structure for use in forming inductive structures used in electromagnetic transmission, transformers and filtering applications.
  • the present invention includes inductive structures created in the multiple planes of a glass-ceramic substrate with processes employing the (a) exposure to excitation energy such that the exposure occurs at various angles by either altering the orientation of the substrate or of the energy source, (b) a bake step and (c) an etch step. Angle sizes can be either acute or obtuse.
  • the curved and digital structures are difficult, if not infeasible to create in most glass, ceramic or silicon substrates.
  • the present invention has created the capability to create such structures in both the vertical as well as horizontal plane for glass-ceramic substrates.
  • the present invention includes a method for fabricating of a inductive structure on or in a glass ceramic.
  • Ceramicization of the glass is accomplished by exposing the entire glass substrate to approximately 20J/cm 2 of 310nm light. When trying to create glass spaces within the ceramic, users expose all of the material, except where the glass is to remain glass.
  • the present invention provides a quartz/chrome mask containing a variety of concentric circles with different diameters.
  • the present invention includes a method for fabricating an inductive device in or on glass ceramic structure electrical microwave and radio frequency applications.
  • the glass ceramic substrate may be a photosensitive glass substrate having a wide number of compositional variations including but not limited to: 60 to 76 weight % silica; at least 3 weight % K2O with 6 to 16 weight % of a combination of K2O and Na2O; 0.003 to 1 weight % of at least one oxide selected from the group consisting of Ag 2 O and AU2O; 0.003 to 2 weight % CU2O; 0.75 to 7 weight % B2O3, and 6 to 7 weight % AI2O3, with the combination of B2O3; and AI2O3 not exceeding 13 weight %; 8 to 15 weight % Li 2 O; and 0.001 to 0.1 weight % CeC>2.
  • the exposed portion may be transformed into a crystalline material by heating the glass substrate to a temperature near the glass transformation temperature.
  • an etchant such as hydrofluoric acid
  • the anisotropic-etch ratio of the exposed portion to the unexposed portion is at least 30: 1 when the glass is exposed to a broad spectrum mid-ultraviolet (about 308-312 nm) flood lamp to provide a shaped glass structure that has an aspect ratio of at least 30: 1, and to create an inductive structure.
  • the mask for the exposure can be of a halftone mask that provides a continuous grey scale to the exposure to form a curved structure for the creation an inductive structure/device.
  • a halftone mask or grey scale enables the control the device structure by controlling the exposure intensity undercut of the ultraviolet light from the lamp.
  • a digital mask can also be used with the flood exposure can be used to produce for the creation an inductive structure/device.
  • the exposed glass is then typically baked in a two-step process: (1) heated between 420°C and 520°C for between 10 minutes to 2 hours, for the coalescing of silver ions into silver nanoparticles, and (2) heated between 520°C and 620°C for between 10 minutes and 2 hours, allowing the lithium oxide to form around the silver nanoparticles.
  • the glass plate is then etched.
  • the glass substrate is etched in an etchant of HF solution, typically 5% to 10% by volume, wherein the etch ratio of the exposed portion to that of the unexposed portion is at least 30:1 when exposed with a broad spectrum mid-ultraviolet flood light, and greater than 30: 1 when exposed with a laser, to provide a shaped glass structure with an anisotropic-etch.
  • HF solution typically 5% to 10% by volume
  • FIGS. 14A-14F show the process of making a device using the present invention.
  • Figures 14A to 14D show one example of the present invention.
  • FIG. 14A shows the starting material that is a photodefinable glass 10, which can be a wafer and may preferably be an APEX® Glass of, e.g., a 1 mm thickness with a surface roughness less than or equal to 50nm and surface to surface parallel less than or equal to 10% with an RMS roughness ⁇ 200 A.
  • a top, isometric view is shown with a cross-sectional side view shown along dotted line A-A’.
  • a resistor section of an SiP and its manufacture is shown.
  • a photomask is deposited on the photodefinable glass 10 so the pattern of a trench/rectangle is formed, and the photodefinable glass 10 is exposed to a radiation at 310 nm with an intensity ⁇ 20 J/cm2 and baked to create the exposure as described above.
  • the width, length and depth of the exposure combined with the resistivity of the resistor media determine the resistor value.
  • Both a top view and a cross-sectional side view are shown including a via pattern for the resistor. Exposure of the photodefinable glass 10 not covered by the mask creates a ceramic 12 in the photodefinable glass 10.
  • the ceramic 12 that was formed in the prior step is further processed.
  • the photodefinable glass 10 regions that have been converted to ceramic 12 are etched in a wet etch of HF acid as described above to form a trench 14.
  • the etched regions of the photodefinable glass 10 are filled with a RF resistor paste or media 16 of Alumina, AIN, Be or other high frequency resistor material.
  • the resistor paste or media 16 is deposited via a silk screening process. Excess paste is removed by a light DI water or IPA rinse and nylon wipe.
  • the photodefinable glass 10 wafer with the resistor paste 16 is then placed into an annealing oven with an inert environment such as Argon or a vacuum.
  • the photodefinable glass 10 wafer is ramped to sinter the resistive material. Any excess resistor media on the surface can be removed by a 5 min CMP process with 2 pm Silica polishing media and water.
  • the photodefinable glass 10 is again coated with a standard photoresist.
  • a pattern is exposed and developed following the standard process to create a pattern through the photoresists that a resistor layer can be deposited.
  • the wafer is exposed to a light O2 plasma to remove any residual organic material in the pattern. Typically this is accomplished at 0.1 mTorr with 200 W forward power for 1 min.
  • a metallization layer 18 is deposited, e.g., a thin film of tantalum, titanium TiN, TiW, NiCr or other similar media.
  • the deposition is accomplished by a vacuum deposition.
  • the vacuum deposition of a seed layer can be accomplished by DC sputtering of tantalum through a liftoff pattern on to the glass substrate at a rate of 40 A/min.
  • the photodefinable glass 10 wafer is coated with a standard photoresist.
  • a pattern is exposed and developed following the standard process to create a pattern through the photoresists that a metallic seed layer can be deposited.
  • the wafer is exposed to a light O2 plasma to remove any residual organic material in the pattern. Typically this is accomplished at 0.1 mTorr with 200 W forward power for 1 min.
  • a thin film seed layer of 400 A of tantalum is deposited by a vacuum deposition.
  • the vacuum deposition of a seed layer can be accomplished by DC sputtering of tantalum through a liftoff pattern on to the glass substrate at a rate of 40A/min.
  • a capacitor section of a SiP is formed using masks.
  • a photomask is used to image the capacitor at 310 nm light with an intensity of ⁇ 20 J/cm2 to create a ladder shaped exposure in the photodefinable glass as described above.
  • the spacing between the rungs in the ladder can range between 5% to 95%.
  • This structure forms an interdigitated electrode based capacitor.
  • an inductor section of an SiP is formed using masks.
  • a photomask with the pattern of through-hole vias is made where one of the rows of via are offset by 30% to the other row.
  • the via pattern is exposed at 310 nm radiation at an intensity of ⁇ 20 J/cm2 to create the exposure as described above.
  • This figures shows a top view of via pattern for the inductor.
  • the glass regions that have been converted to ceramic are etched in a wet etch of HF acid as described above.
  • the photodefinable glass 10 wafer is the placed in a copper plating bath that preferentially plates the etched ceramic structure and completely fills the via and interdigitated line structure as described above.
  • FIGS. 15A-15F show further processing steps for making a device using the present invention.
  • FIG. 15 A shows the copper filled through glass structures (via and interdigitated lines), and the APEX glass substrate is exposed using a second photo mask that has a patterns to connect the via for the inductors and finish the interdigitated pattern for the capacitor.
  • FIG. 15B shows a cross-sectional view of the inductor. The intensity is of 310 nm light is 0. 1 J/cm2, the wafer is the baked at 600° C in argon for 30 min as described above.
  • FIG. 15A and 15B show that this converts the first few microns of the exposed glass to ceramic. The wafer is placed into a dilute HF bath exposing metallic silver.
  • FIG. 15C shows the next step, in which an additional photo exposure and etch can be accomplished to remove the glass/ceramic material between the interdigitated electrodes of the capacitor to improve the Quality Factor or Q of the Capacitor.
  • FIG. 15D shows the next step, in which an additional photo exposure and etch can be accomplished to remove the glass/ceramic material between the interdigitated electrodes and filled with a high k media to dramatically increase the capacitance to improve the Quality Factor of the capacitor.
  • FIG. 15C shows the next step, in which an additional photo exposure and etch can be accomplished to remove the glass/ceramic material between the interdigitated electrodes of the capacitor to improve the Quality Factor or Q of the Capacitor.
  • FIG. 15E shows the next step, in which an addition photo exposure and etch can be accomplished to remove the glass/ceramic material identified as the material within the rectangular outline of the inductor to enable the coils to be free standing to improve the Quality Factor or Q of the inductor.
  • FIG. 15F shows the next step, in which an addition photo exposure and etch can be accomplished to remove the glass/ceramic material identified as the material within the rectangular outline or outside of the rectangular outline of the inductor.
  • This region can be filled with magnetic particles that can be sintered under an inert gas to create an magnetic core inductor. This enables the integrated inductor to have much higher levels of inductance.
  • FIG. 16 shows a flowchart of a method embodiment of the invention.
  • Method 1600 begins with block 1605, providing a photodefinable glass substrate.
  • the step of masking a design layout comprising one or more structures to form one or more integrated lumped element devices as the system-in-package on or in a photodefinable glass substrate is shown on block 1610.
  • Block 1615 includes transforming at least a portion of the photodefinable glass substrate to a crystalline material to form a glass-crystalline substrate.
  • the step of etching the glass-crystalline substrate with an etchant solution to form one or more channels in the glasscrystalline substrate is shown in block 1620, and block 1625 shows depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate exposed during the etching step to enable electroplating of copper to fill the one or more channels and to deposit the copper on the surface of the photodefinable glass to form the one or more integrated lumped element devices.
  • the step of electroplating the copper to fill the one or more channels and to deposit copper on the surface of the photodefinable glass to form the one or more integrated lumped element devices is shown in block 1630.
  • the embodiment includes the steps of exposing at least a portion of the photodefinable glass substrate to an activating energy source, shown in block 1635; heating the photodefinable glass substrate for at least ten minutes above a glass transition temperature thereof, shown in block 1640; and cooling the photodefinable glass substrate to transform the at least a portion of the exposed photodefinable glass substrate to a crystalline material to form the glass-crystalline substrate, shown in block 1645.
  • a method for creating a system-in-package formed in or on photodefinable glass consists essentially of or consists of: providing a photodefinable glass substrate; masking a design layout including one or more structures to form one or more integrated lumped element devices as the system-in-package on or in a photodefinable glass substrate; transforming at least a portion of the photodefinable glass substrate to a crystalline material to form a glass-crystalline substrate; etching the glass-crystalline substrate with an etchant solution to form one or more channels in the glass-crystalline substrate; depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate exposed during the etching step to enable electroplating of copper to fill the one or more channels and to deposit the copper on the surface of the photodefinable glass to form the one or more integrated lumped element devices; and electroplating the copper to fill the one or more channels and to deposit copper on the surface of the photodefinable glass to form the one or
  • the photodefinable glass substrate includes silica, lithium oxide, aluminum oxide, and cerium oxide.
  • the method further includes converting the glass-crystalline substrate adjacent to the one or more channels to a ceramic phase.
  • the step of transforming at least a portion of the photodefinable glass substrate includes: exposing at least a portion of the photodefinable glass substrate to an activating energy source; heating the photodefinable glass substrate for at least ten minutes above a glass transition temperature thereof; and cooling the photodefinable glass substrate to transform the at least a portion of the exposed photodefinable glass substrate to a crystalline material to form the glass-crystalline substrate.
  • an anisotropic- etch ratio of an exposed portion to an unexposed portion is at least 30: 1.
  • the one or more integrated lumped system elements form an RF circuit that eliminates at least 25%, 30%, 35%, 40%, 45%, or 50% of an RF parasitic signal loss when compared to the equivalent surface-mounted device that is not on or in photodefinable glass.
  • the one or more integrated lumped element devices form one or more isolators, one or more circulators, or one or more radio frequency (RF) filters including a low-pass filter, a high-pass filter, a notch filter, or a band-pass filter.
  • RF radio frequency
  • the one or more integrated lumped system elements form one or more devices including an antenna, an impedance matching element, a 50-ohm termination element, an integrated ground planes, an RF shielding element, an EMI shielding element, an RF combiner, an RF splitter, a power combiner, a power splitter, a transformer, a switch, or a diplexer.
  • Another embodiment is a system-in-package made by a method consisting essentially of or consisting of: providing a photodefmable glass substrate; masking a design layout including one or more structures to form one or more integrated lumped element devices as the system-in-package on or in a photodefmable glass substrate; transforming at least a portion of the photodefmable glass substrate to a crystalline material to form a glass-crystalline substrate; etching the glass-crystalline substrate with an etchant solution to form one or more channels in the glass-crystalline substrate; depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate exposed during the etching step to enable electroplating of copper to fill the one or more channels and to deposit the copper on the surface of the photodefmable glass to form the one or more integrated lumped element devices; and electroplating the copper to fill the one or more channels and to deposit copper on the surface of the photodefmable glass to form the one or more integrated lumped element devices
  • the photodefmable glass substrate includes silica, lithium oxide, aluminum oxide, and cerium oxide.
  • the method further includes converting the glass-crystalline substrate adjacent to the one or more channels to a ceramic phase.
  • the step of transforming at least a portion of the photodefmable glass substrate includes: exposing at least a portion of the photodefmable glass substrate to an activating energy source; heating the photodefmable glass substrate for at least ten minutes above a glass transition temperature thereof, and cooling the photodefmable glass substrate to transform the at least a portion of the exposed photodefmable glass substrate to a cry stalline material to form the glass-crystalline substrate.
  • an anisotropic-etch ratio of an exposed portion to an unexposed portion is at least 30:1.
  • the one or more integrated lumped system elements form an RF circuit that eliminates at least 25%, 30%, 35%, 40%, 45%, or 50% of an RF parasitic signal loss when compared to the equivalent surface-mounted device that is not on or in photodefmable glass.
  • the one or more integrated lumped element devices form one or more isolators, one or more circulators, or one or more radio frequency (RF) filters including a low-pass filter, a high-pass filter, a notch filter, or a band-pass filter.
  • RF radio frequency
  • the one or more integrated lumped system elements form one or more devices including an antenna, an impedance matching element, a 50-ohm termination element, an integrated ground planes, an RF shielding element, an EMI shielding element, an RF combiner, an RF splitter, a power combiner, a power splitter, a transformer, a switch, or a diplexer.
  • a system-in-package consists essentially of or consists of: a photodefmable glass substrate; and one or more integrated lumped element devices comprising one or more resistors, one or more capacitors, one or more inductors, or a combination thereof formed on or in the photodefmable glass substrate as a system-in-package.
  • the photodefmable glass substrate comprises silica, lithium oxide, aluminum oxide, and cerium oxide.
  • the one or more integrated lumped element devices form one or more isolators, one or more circulators, or one or more radio frequency (RF) filters comprising a low-pass filter, a high-pass filter, a notch filter, or a band-pass filter.
  • RF radio frequency
  • the one or more integrated lumped system elements form one or more devices comprising an antenna, an impedance matching element, a 50-ohm termination element, an integrated ground planes, an RF shielding element, an EMI shielding element, an RF combiner, an RF splitter, a power combiner, a power splitter, a transformer, a switch, or a diplexer.
  • the one or more integrated lumped system elements form an RF circuit that eliminates at least 25%, 30%, 35%, 40%, 45%, or 50% of an RF parasitic signal loss when compared to an equivalent surfacemounted device that is not on or in photodefmable glass.
  • the words “comprising” (and any form of comprising, such as “comprise” and “comprises”), “having” (and any fonn of having, such as “have” and “has”), “including” (and any form of including, such as “includes” and “include”) or “containing” (and any form of containing, such as “contains” and “contain”) are inclusive or open-ended and do not exclude additional, unrecited elements or method steps.
  • “comprising” may be replaced with “consisting essentially of’ or “consisting of’.
  • the phrase “consisting essentially of’ requires the specified integer(s) or steps as well as those that do not materially affect the character or function of the claimed invention.
  • the term “consisting” is used to indicate the presence of the recited integer (e.g., a feature, an element, a characteristic, a property, a method/process step or a limitation) or group of integers (e.g., feature(s), element(s), characteristic(s), property(ies), method/process steps or limitation(s)) only.
  • A, B, C, or combinations thereof refers to all permutations and combinations of the listed items preceding the term.
  • “A, B, C, or combinations thereof’ is intended to include at least one of: A, B, C, AB, AC, BC, or ABC, and if order is important in a particular context, also BA, CA, CB, CBA, BCA, ACB, BAC, or CAB.
  • expressly included are combinations that contain repeats of one or more item or term, such as BB, AAA, AB, BBC, AAABCCCC, CBBAAA, CABABB, and so forth.
  • the skilled artisan will understand that typically there is no limit on the number of items or terms in any combination, unless otherwise apparent from the context.
  • words of approximation such as, without limitation, “about”, “substantial” or “substantially” refers to a condition that when so modified is understood to not necessarily be absolute or perfect but would be considered close enough to those of ordinary skill in the art to warrant designating the condition as being present.
  • the extent to which the description may vary will depend on how great a change can be instituted and still have one of ordinary skilled in the art recognize the modified feature as still having the required characteristics and capabilities of the unmodified feature.
  • a numerical value herein that is modified by a word of approximation such as “about” may vary from the stated value by at least ⁇ 1, 2, 3, 4, 5, 6, 7, 10, 12 or 15%.
  • compositions and/or methods disclosed and claimed herein can be made and executed without undue experimentation in light of the present disclosure. While the compositions and methods of this invention have been described in terms of preferred embodiments, it will be apparent to those of skill in the art that variations may be applied to the compositions and/or methods and in the steps or in the sequence of steps of the method described herein without departing from the concept, spirit and scope of the invention. All such similar substitutes and modifications apparent to those skilled in the art are deemed to be within the spirit, scope and concept of the invention as defined by the appended claims.

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Abstract

La présente invention comprend un procédé de création d'un système en boîtier dans ou sur un verre photodéfinissable consistant à : prendre un substrat en verre photodéfinissable ; masquer une disposition de conception comprenant une ou plusieurs structures pour former un ou plusieurs dispositifs à éléments localisés intégrés en tant que système en boîtier sur ou dans un substrat en verre photodéfinissable ; transformer au moins une partie du substrat de verre photodéfinissable pour former un substrat cristallin de verre ; graver le substrat cristallin de verre pour former un ou plusieurs canaux dans le substrat cristallin de verre ; déposer, faire croître ou graver de manière sélective une couche de germe sur une surface du substrat cristallin de verre pour permettre l'électrodéposition de cuivre ; et électrodéposer le cuivre pour remplir le ou les canaux et pour déposer du cuivre sur la surface du verre photodéfinissable pour former le ou les dispositifs d'éléments localisés intégrés.
PCT/US2023/017311 2022-04-11 2023-04-03 Dispositifs d'éléments localisés à rf en 2d et en 3d pour un système à rf dans des substrats de verre photo-actifs en boîtier WO2023200624A1 (fr)

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Application Number Priority Date Filing Date Title
US17/717,743 US20220239270A1 (en) 2017-07-07 2022-04-11 2D & 3D RF Lumped Element Devices for RF System in a Package Photoactive Glass Substrates
US17/717,743 2022-04-11

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040104449A1 (en) * 2001-03-29 2004-06-03 Jun-Bo Yoon Three- dimensional metal devices highly suspended above semiconductor substrate, their circuit model, and method for manufacturing the same
US20100009838A1 (en) * 2007-03-26 2010-01-14 Murata Manufacturing Co., Ltd. Photosensitive dielectric paste and electronic part made with the same
US20170094794A1 (en) * 2015-09-30 2017-03-30 3D Glass Solutions, Inc Photo-definable glass with integrated electronics and ground plane
WO2019010045A1 (fr) * 2017-07-07 2019-01-10 3D Glass Solutions, Inc. Dispositifs d'éléments bosselés à rf en 2d et en 3d pour un système à rf dans des substrats de verre photo-actifs en groupe

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040104449A1 (en) * 2001-03-29 2004-06-03 Jun-Bo Yoon Three- dimensional metal devices highly suspended above semiconductor substrate, their circuit model, and method for manufacturing the same
US20100009838A1 (en) * 2007-03-26 2010-01-14 Murata Manufacturing Co., Ltd. Photosensitive dielectric paste and electronic part made with the same
US20170094794A1 (en) * 2015-09-30 2017-03-30 3D Glass Solutions, Inc Photo-definable glass with integrated electronics and ground plane
WO2019010045A1 (fr) * 2017-07-07 2019-01-10 3D Glass Solutions, Inc. Dispositifs d'éléments bosselés à rf en 2d et en 3d pour un système à rf dans des substrats de verre photo-actifs en groupe

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