WO2023189429A1 - Temperature sensor and sensor device - Google Patents

Temperature sensor and sensor device Download PDF

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Publication number
WO2023189429A1
WO2023189429A1 PCT/JP2023/009335 JP2023009335W WO2023189429A1 WO 2023189429 A1 WO2023189429 A1 WO 2023189429A1 JP 2023009335 W JP2023009335 W JP 2023009335W WO 2023189429 A1 WO2023189429 A1 WO 2023189429A1
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Prior art keywords
resistor
mems
converter
chip
resistors
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PCT/JP2023/009335
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French (fr)
Japanese (ja)
Inventor
喬 三宅
弘樹 矢野
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ローム株式会社
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Publication of WO2023189429A1 publication Critical patent/WO2023189429A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • G01K7/24—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor in a specially-adapted circuit, e.g. bridge circuit
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/50—Analogue/digital converters with intermediate conversion to time interval

Definitions

  • the present disclosure relates to a temperature sensor.
  • a temperature sensor using a constant current source and a diode is known as a temperature sensor (for example, FIG. 4 of Patent Document 1).
  • an object of the present disclosure is to provide a temperature sensor that can suppress the output of an AD converter from having power supply voltage characteristics when AD conversion is performed using an AD converter.
  • the temperature sensor according to the present disclosure includes a first resistor and a second resistor connected in series between a power supply voltage application end and a ground potential application end, and a first resistor and a second resistor connected in series between the power supply voltage application end and the ground potential application end.
  • a first resistor bridge circuit having a third resistor and a fourth resistor connected in series between the application terminal;
  • the first resistor is provided on the ground potential side and has positive temperature characteristics with respect to resistance value
  • the second resistor is provided on the power supply voltage side and has negative temperature characteristics with respect to resistance value
  • the third resistor is provided on the power supply voltage side and has positive temperature characteristics with respect to resistance value
  • the fourth resistor is provided on the ground potential side and has a negative temperature characteristic with respect to resistance value.
  • the temperature sensor when AD conversion is performed using an AD converter, it is possible to suppress the output of the AD converter from having power supply voltage characteristics.
  • FIG. 1 is a diagram illustrating the configuration of a sensor device according to an exemplary embodiment of the present disclosure.
  • FIG. 2 is a diagram illustrating a specific configuration example of the AD conversion unit according to the embodiment of the present disclosure.
  • FIG. 3 is a timing chart showing an example of the behavior of the output voltages Vout1, Vout2 and the comparator output CPout.
  • FIG. 4 is a timing chart illustrating an example of a case where noise is added to the temperature sensor according to the embodiment of the present disclosure.
  • FIG. 5 is a diagram showing a first example of arrangement of various resistors.
  • FIG. 6 is a diagram showing a second example of arrangement of various resistors.
  • FIG. 7 is a diagram showing a third arrangement example of various resistors.
  • FIG. 1 is a diagram illustrating the configuration of a sensor device according to an exemplary embodiment of the present disclosure.
  • FIG. 2 is a diagram illustrating a specific configuration example of the AD conversion unit according to the embodiment of the present disclosure.
  • FIG. 8 is a diagram showing a fourth example of arrangement of various resistors.
  • FIG. 9 is a diagram showing the configuration of a sensor device according to a comparative example.
  • FIG. 10 is a diagram illustrating a specific configuration example of an AD converter according to a comparative example.
  • FIG. 11 is a timing chart showing an example of the behavior of the output voltage Vout and the comparator output CPout.
  • FIG. 12 is a timing chart showing an example of a case where noise is added to the temperature sensor according to the comparative example.
  • FIG. 9 is a diagram showing the configuration of a sensor device 50 according to a comparative example.
  • the sensor device 50 shown in FIG. 9 includes a temperature sensor 10, an AD converter 20, and a MEMS (Micro Electro Mechanical Systems) sensor 30.
  • the temperature sensor 10 includes a constant current source 101 and a diode 102.
  • Constant current source 101 is connected between the application end of internal voltage Vreg and the anode of diode 102.
  • a cathode of the diode 102 is connected to a ground potential application terminal.
  • the anode of the diode 102 is connected to the AD converter 20 via the switch SW10.
  • Vf (forward voltage) of the diode 102 changes depending on the temperature when a constant current generated by the constant current source 101 is applied. By AD converting the above Vf by the AD converter 20, it becomes possible to detect the temperature.
  • the MEMS sensor 30 has a resistive bridge circuit 301 composed of MEMS resistors Ra, Rb, Rc, and Rd.
  • MEMS resistors Ra and Rb are connected in series between an end to which a power supply voltage Vdd is applied and an end to which a ground potential is applied.
  • the MEMS resistors Rc and Rd are connected in series between an end to which a power supply voltage Vdd is applied and an end to which a ground potential is applied.
  • the MEMS sensor 30 is configured by integrating a diaphragm and a resistive bridge circuit 301.
  • the resistance bridge circuit 301 is formed by using a Si substrate as a diaphragm and diffusing impurities into the surface of the Si substrate.
  • the MEMS sensor 30 is a pressure sensor that utilizes a piezoresistance effect.
  • the piezoresistive effect is a phenomenon in which the resistance value changes when pressure is applied to the resistance.
  • switch SW10 when detecting temperature with the temperature sensor 10, switch SW10 is turned on and switches SW11 and SW12 are turned off. When detecting pressure with the MEMS sensor 30, switch SW10 is turned off and switches SW11 and SW12 are turned on. shall be.
  • a DSP digital signal processor
  • the DSP described above can correct the pressure value detected by the MEMS sensor 30 based on the temperature detected by the temperature sensor 10. That is, the temperature characteristic of the resistance value of the resistance bridge circuit 301 is corrected by the temperature sensor 10.
  • FIG. 10 is a diagram showing a specific configuration example of the AD conversion section 20.
  • the AD converter 20 includes a non-inverting amplifier circuit 201, an AD converter 202, and a comparator 203.
  • the non-inverting amplifier circuit 201 includes an amplifier (op-amp) 201A and resistors 201B and 201C.
  • a non-inverting input terminal of amplifier 201A is connected to the anode of diode 102.
  • a switch SW10 (FIG. 9) is connected between the anode of the diode 102 and the non-inverting input terminal of the amplifier 201A.
  • the output end of amplifier 201A is connected to one end of resistor 201B.
  • the other end of the resistor 201B and the inverting input end of the amplifier 201A are connected to one end of the resistor 201C.
  • the other end of the resistor 201C is connected to a ground potential application end.
  • Vf of the diode 102 is non-invertingly amplified with an amplification factor determined by the resistors 201B and 201C.
  • the AD converter 202 is provided after the non-inverting amplifier circuit 201.
  • the AD converter 202 is configured as an integral type AD converter, and includes an input resistor Ri, an input switch SWi, a discharge resistor Ro, a discharge switch SWo, a capacitor C, and an amplifier 202A.
  • One end of the input resistor Ri is connected to the output end of the amplifier 201A.
  • the other end of the resistor Ri is connected to one end of the input switch SWi.
  • the other end of the input switch SWi is connected to the first input end of the amplifier 202A.
  • One end of the discharge switch SWo is connected to the first input terminal of the amplifier 202A.
  • the other end of the discharge switch SWo is connected to one end of the discharge resistor Ro.
  • the other end of the discharge resistor Ro is connected to a ground potential application end.
  • Capacitor C is connected between the first input terminal of amplifier 202A and the output terminal of amplifier 202A.
  • a second input terminal of the amplifier 202A is connected to an application terminal of the reference voltage Vref.
  • the comparator 203 is provided after the AD converter 202.
  • a first input terminal of comparator 203 is connected to an output terminal of amplifier 202A.
  • a second input terminal of the comparator 203 is connected to an application terminal of the reference voltage Vref.
  • FIG. 11 is a timing chart showing an example of the behavior of the output voltage Vout and the comparator output CPout output from the comparator 203. As shown in FIG. 11, the output voltage Vout gradually decreases from the reference voltage Vref during the charging time Ti.
  • the output voltage Vout gradually increases during the discharge time To, and when the discharge time To has elapsed, the output voltage Vout reaches the reference voltage Vref. Since the comparator 203 compares the output voltage Vout with the reference voltage Vref, the comparator output Cpout switches from low level to high level when the discharge time To has elapsed.
  • the discharging time To changes depending on the input voltage Vin.
  • the input voltage Vin is a voltage obtained by amplifying Vf of the diode 102 by the non-inverting amplifier circuit 201. Therefore, Vf, that is, temperature can be detected by counting the discharging time To, which is the time from the timing when the charging time Ti has elapsed to the timing when the level of the comparator output CPout is switched.
  • the output voltage Vout shown by the broken line in FIG. 11 indicates a case where Vf, that is, the input voltage Vin is smaller than the output voltage Vout shown by the solid line, and the discharge time To is shorter.
  • Av is the amplification factor of the non-inverting amplifier circuit 201. Therefore, when the AD converter 202 is operated based on Vdd, Vf is not affected by Vdd, so the output (To/Ti) of the AD converter 202 is affected by Vdd, that is, the power supply characteristics. Therefore, in order to avoid being affected by the power supply characteristics, the AD converter 202 also needs to be operated based on the internal voltage Vreg. In this case, a constant voltage source such as an LDO (Low Dropout) is required to generate Vreg so that Vreg does not vary even if Vdd varies.
  • LDO Low Dropout
  • FIG. 12 is a diagram showing an example of a case where noise is added to the temperature sensor 10. Similar to FIG. 11, FIG. 12 shows the behavior of the output voltage Vout and the comparator output CPout. In FIG. 12, the solid line shows the output voltage Vout when there is no noise, and the broken line shows the output voltage Vout when there is noise.
  • the discharge time To becomes longer, resulting in an error ⁇ To in the discharge time To. Therefore, there is a problem that errors in temperature detection occur.
  • FIG. 1 is a diagram showing the configuration of a sensor device 5 according to an exemplary embodiment of the present disclosure.
  • the sensor device 5 shown in FIG. 1 includes a temperature sensor 1, an AD converter 2, a MEMS sensor 30, and switches SW1, SW2, SW11, and SW12.
  • the temperature sensor 1 has a resistive bridge circuit 11 composed of resistors R1, R2, R3, and R4. Resistors R2 and R1 are connected in series between an end to which power supply voltage Vdd is applied and an end to which ground potential is applied. The resistor R2 is provided on the power supply voltage Vdd side, and the resistor R1 is provided on the ground potential side. Resistors R3 and R4 are connected in series between an end to which power supply voltage Vdd is applied and an end to which ground potential is applied. The resistor R3 is provided on the power supply voltage Vdd side, and the resistor R4 is provided on the ground potential side.
  • the resistors R1 and R3 have positive temperature characteristics regarding resistance values.
  • the positive temperature characteristic is a characteristic in which the higher the temperature, the greater the resistance value.
  • Resistors R2 and R4 have negative temperature characteristics regarding resistance values. Negative temperature characteristics are characteristics in which the higher the temperature, the smaller the resistance value.
  • a node N1 to which resistors R2 and R1 are connected is connected to the AD converter 2 via a switch SW2.
  • a node N2 to which resistors R3 and R4 are connected is connected to the AD converter 2 via a switch SW1. The higher the temperature, the greater the voltage difference between nodes N1 and N2.
  • the AD converter 2 can detect the temperature by AD converting the voltage difference.
  • the MEMS sensor 30 has the same configuration as the comparative example (FIG. 9) described above.
  • Node Na is connected to AD converter 2 via switch SW12.
  • Node Nb is connected to AD converter 2 via switch SW11.
  • the pressure can be detected by AD converting the voltage difference generated between the nodes Na and Nb depending on the pressure by the AD converter 2.
  • a DSP (not shown) is provided downstream of the AD converter 2.
  • the DSP described above can correct the pressure value detected by the MEMS sensor 30 based on the temperature detected by the temperature sensor 1.
  • FIG. 2 is a diagram showing a specific configuration example of the AD conversion section 2.
  • the AD converter 2 includes a first voltage follower 21 , a first AD converter 22 , a second voltage follower 23 , a second AD converter 24 , and a comparator 25 .
  • the voltage at the node N1 in the resistor bridge circuit 11 is input to the first voltage follower 21.
  • a switch SW2 (FIG. 1) is connected between the node N1 and the first voltage follower 21.
  • the first AD converter 22 is provided after the first voltage follower 21 and has the same configuration as the AD converter 202 according to the comparative example (FIG. 10) described above, so a detailed description thereof will be omitted.
  • the input voltage Vin1 output from the first voltage follower 21 is applied to one end of the input resistor Ri in the first AD converter 22.
  • the voltage at the node N2 in the resistor bridge circuit 11 is input to the second voltage follower 23.
  • a switch SW1 (FIG. 1) is connected between the node N2 and the second voltage follower 23.
  • the second AD converter 24 is provided after the second voltage follower 23 and has basically the same configuration as the AD converter 202 according to the comparative example (FIG. 10) described above, so a detailed description thereof will be omitted.
  • the end to which the power supply voltage Vdd is applied is connected to the discharge resistor Ro.
  • the input voltage Vin2 output from the second voltage follower 23 is applied to one end of the input resistor Ri in the second AD converter 24.
  • the comparator 25 is provided after the first AD converter 22 and the second AD converter 24.
  • the output voltage Vout1 output from the amplifier 22A in the first AD converter 22 is applied to the first input terminal of the comparator 25.
  • the output voltage Vout2 output from the amplifier 24A in the second AD converter 24 is applied to the second input terminal of the comparator 25.
  • the comparator 25 outputs the result of comparing the output voltages Vout1 and Vout2 as a comparator output CPout.
  • the input switch SWi is turned on and the discharge switch SWo is turned off, so that the input current Ii flows through the input resistor Ri, and the capacitor C is charged. Thereafter, by turning the input switch SWi off and turning the discharge switch SWo on, a discharge current Io flows through the discharge resistor Ro, and the capacitor C is discharged. At this time, as shown in FIG. 2, the input current Ii flows to the amplifier 22A side, and the discharge current Io flows to the ground potential side.
  • FIG. 3 is a timing chart showing an example of the behavior of the output voltages Vout1, Vout2 and the comparator output CPout.
  • the output voltage Vout1 decreases from the reference voltage Vref during the charging time Ti, and rises to the reference voltage Vref during the discharging time To.
  • the input switch SWi is turned on and the discharge switch SWo is turned off, so that the input current Ii flows through the input resistor Ri, and the capacitor C is charged. Thereafter, by turning the input switch SWi off and turning the discharge switch SWo on, a discharge current Io flows through the discharge resistor Ro, and the capacitor C is discharged. At this time, as shown in FIG. 2, the input current Ii flows to the second voltage follower 23 side, and the discharge current Io flows to the amplifier 24A side.
  • the output voltage Vout2 increases from the reference voltage Vref during the charging time Ti, and decreases to the reference voltage Vref during the discharging time To.
  • the influence of Vdd can also be suppressed on the output of the second AD converter 24.
  • FIG. 4 is a diagram showing an example when noise is added to the temperature sensor 1. Similar to FIG. 3, FIG. 4 shows the behavior of the output voltages Vout1, Vout2 and the comparator output CPout.
  • the solid line shows the output voltage Vout when there is no noise
  • the broken line shows the output voltage Vout when there is noise.
  • the noise is common mode noise (such as PSRR) that affects nodes N1 and N2 in the same phase.
  • PSRR common mode noise
  • the output voltages Vout1 and Vout2 shift in the same direction, so that the error in the discharge time To is suppressed. In this way, according to the configuration of the temperature sensor 1 and the AD converter 2 according to the present disclosure, noise resistance is improved.
  • the node Na in the MEMS sensor 30 is connected to the first voltage follower 21 via the switch SW12, and the node Nb in the MEMS sensor 30 is connected to the second voltage follower 23 via the switch SW11.
  • pressure can be detected by measuring the discharge time To.
  • noise resistance is improved as in the case of temperature detection. That is, since the temperature sensor 1 has the same circuit configuration as the MEMS sensor 30, compatibility with the MEMS sensor 30 can be improved.
  • resistor arrangement> Various arrangement examples of the resistors R1 to R4 in the temperature sensor 1 and the MEMS resistors Ra to Rd in the MEMS sensor 30 will be described below.
  • FIG. 5 is a diagram showing a first arrangement example of the resistors R1 to R4 and the MEMS resistors Ra to Rd.
  • the sensor device 5 includes a MEMS chip 3 and an ASIC (application specific integrated circuit) chip 4. Note that this also applies to the configurations shown in FIGS. 6 to 8, which will be described later.
  • ASIC application specific integrated circuit
  • the resistors R1 to R4 and the MEMS resistors Ra to Rd are integrated into the MEMS chip 3.
  • a diaphragm is also integrated into the MEMS chip 3.
  • the pad P31 for applying the power supply voltage Vdd is connected to the resistors R2 and R3, the pad P32 is connected to the node N2, the pad P33 is connected to the node N1, and the pad P31 is connected to the resistors R1 and R4.
  • a pad P34 for applying a ground potential is provided on the MEMS chip 3.
  • a pad P38 is provided on the MEMS chip 3.
  • the ASIC chip 4 is provided with pads P41 to P48 that are connected to pads P31 to P38, respectively, by wires Wr.
  • the ASIC chip 4 is provided with AD converters 22 and 24 and a DSP 400. This also applies to the configurations shown in FIGS. 6 to 8, which will be described later.
  • the temperature detection resistors R1 to R4 are provided on the MEMS chip 3, the temperature of the MEMS chip 3 can be directly measured, and the error factors with the temperature of the MEMS sensor 30 are reduced.
  • FIG. 6 is a diagram showing a second arrangement example of the resistors R1 to R4 and the MEMS resistors Ra to Rd.
  • resistors R1 to R4 are provided on the ASIC chip 4.
  • a pad P34 for this purpose is provided on the MEMS chip 3.
  • the ASIC chip 4 is provided with pads P41 to P44 connected to the pads P31 to P34, respectively, by wires Wr.
  • the number of pads and wires can be reduced. Further, by providing the resistors R1 to R4 having predetermined temperature characteristics in the ASIC chip 4 different from the MEMS chip 3, the resistors R1 to R4 can be easily formed.
  • FIG. 7 is a diagram showing a third arrangement example of resistors R1 to R4 and MEMS resistors Ra to Rd.
  • resistors R3 and R1 are provided on the MEMS chip 3
  • resistors R2 and R4 are provided on the ASIC chip 4.
  • P34 is provided on the MEMS chip 3.
  • One end of resistor R3 is connected to pad P31.
  • a pad P35 connected to the other end of the resistor R3 is provided on the MEMS chip 3.
  • the MEMS chip 3 is provided with a pad P36 connected to one end of the resistor R1 and a pad P37 connected to the other end of the resistor R1.
  • the ASIC chip 4 is provided with pads P41 to P47 that are connected to pads P31 to P37, respectively, by wires Wr.
  • a switch SW41 having one end connected to the pad P44 is provided on the ASIC chip 4. The other end of the switch SW41 is connected to a ground potential application end.
  • One end of resistor R2 is connected to pad P41.
  • the other end of resistor R2 is connected to pad P46.
  • One end of resistor R4 is connected to pad P45.
  • a switch SW42 is provided on the ASIC chip 4, and has one end connected to the other end of the resistor R4 and the pad P47. The other end of the switch SW42 is connected to a ground potential application end.
  • the switch SW41 When detecting pressure using the MEMS sensor 30, the switch SW41 is turned on and the switch SW42 is turned off. When the temperature is detected by the temperature sensor 1, the switch SW41 is turned off and the switch SW42 is turned on.
  • the MEMS chip 3 is provided with resistors R1 and R3, both of which have positive temperature characteristics with respect to resistance value
  • the ASIC chip 4 is provided with resistors R2, R4, both of which have negative temperature characteristics with respect to resistance value.
  • Resistors R1 and R3 can be formed as the same resistance as the resistances Ra to Rd in the MEMS sensor 30, that is, as resistances having the same temperature characteristics.
  • resistors R2 and R4 having temperature characteristics opposite to those of resistors R1 and R3 can be formed in the ASIC chip 4. Therefore, it becomes easy to form the resistors R1 to R4.
  • the error factor with respect to the temperature of the MEMS sensor 30 is reduced. Furthermore, the number of pads and wires can be reduced.
  • resistors R2 and R4 may be provided on the MEMS chip 3, and the resistors R1 and R3 may be provided on the ASIC chip 4.
  • FIG. 8 is a diagram showing a fourth arrangement example of resistors R1 to R4 and MEMS resistors Ra to Rd.
  • the MEMS chip 3 is provided with a switch SW31 having one end connected to the resistors Rb and Rd. The other end of switch SW31 and resistor R3 are connected to pad P34.
  • Pad P44 which is connected to pad P34 by wire Wr, is connected to switch SW41 and resistor R4.
  • One end of resistor R1 is connected to pad P35.
  • Pad P45 which is connected to pad P35 by wire Wr, is connected to resistor R2.
  • the other end of resistor R1 is connected to pad P36.
  • Pad P46 which is connected to pad P36 by wire Wr, is connected to switch SW42.
  • the switches SW31 and SW41 are turned on and the switch SW42 is turned off.
  • the switches SW31 and SW41 are turned off and the switch SW42 is turned on.
  • the temperature sensor (1) is A first resistor (R1) and a second resistor (R2) connected in series between an end to which a power supply voltage (Vdd) is applied and an end to which a ground potential is applied, and an end to which the power supply voltage is applied and the ground potential is applied.
  • a first resistor bridge circuit (11) having a third resistor (R3) and a fourth resistor (R4) connected in series between the two ends;
  • the first resistor is provided on the ground potential side and has positive temperature characteristics with respect to resistance value
  • the second resistor is provided on the power supply voltage side and has negative temperature characteristics with respect to resistance value
  • the third resistor is provided on the power supply voltage side and has positive temperature characteristics with respect to resistance value
  • the fourth resistor is provided on the ground potential side and has a configuration having negative temperature characteristics with respect to resistance value (first configuration, FIG. 1).
  • a sensor device (5) includes a temperature sensor (1) having the first configuration and an AD converter (2) provided at a subsequent stage of the resistor bridge circuit (11).
  • the AD converter includes: a first AD converter (22) connectable to a first node (N1) to which the first resistor and the second resistor are connected; a second AD converter (24) connectable to a second node (N2) to which the third resistor and the fourth resistor are connected; has The first AD converter and the second AD converter each include an amplifier (22A, 24A) having a first input terminal to which a reference voltage (Vref) can be applied, and a second input terminal of the amplifier and an output terminal of the amplifier. a capacitor (C) connected between; The first AD converter and the second AD converter are each configured to perform AD conversion by charging the capacitor and discharging the capacitor based on the voltage at the first node or the voltage at the second node. (second configuration, Figure 2).
  • the reference voltage (Vref) is a voltage based on the power supply voltage (Vdd)
  • the capacitor is discharged by a discharge current (Io) flowing toward the ground potential side
  • the second AD converter (24) may have a configuration in which the capacitor is discharged by a discharge current (Io) flowing from the power supply voltage side (third configuration, FIG. 2).
  • the output of the amplifier (22A) in the first AD converter (22) and the output of the amplifier (24A) in the second AD converter (24) are input. (4th configuration, FIG. 2).
  • a first MEMS resistor (Ra) and a second MEMS resistor are connected in series between an end to which the power supply voltage (Vdd) is applied and an end to which the ground potential is applied. (Rb); a third MEMS resistor (Rc) and a fourth MEMS resistor (Rd) connected in series between the power supply voltage application terminal and the ground potential application terminal; 301);
  • a third node (Na) to which the first MEMS resistor and the second MEMS resistor are connected can be connected to the first AD converter (22),
  • the fourth node (Nb) to which the third MEMS resistor and the fourth MEMS resistor are connected may be configured to be connectable to the second AD converter (24) (fifth configuration, FIG. 1).
  • the first chip (3) may be provided with the first to fourth resistors (R1 to R4) and the first to fourth MEMS resistors (Ra to Rd).
  • the fifth configuration includes a first chip (3) on which the first to fourth MEMS resistors (Ra to Rd) are provided, and a second chip (4),
  • the first resistor (R1) and the third resistor (R3) are provided on the first chip, and the second resistor (R2) and the fourth resistor (R4) are provided on the second chip, or , the second resistor and the fourth resistor may be provided on the first chip, and the first resistor and the third resistor may be provided on the second chip (eighth configuration, FIG. 7, Figure 8).
  • a first switch (SW41) connected between the second MEMS resistor (Rb) and the fourth MEMS resistor (Rd) and the ground potential application terminal, and the first resistor (R1) and a second switch (SW42) connected between the fourth resistor (R4) and the end to which the ground potential is applied may be provided in the second chip (4).
  • a third switch (SW31) connected between the pad and the first chip (3) may be provided in the first chip (3) (a tenth configuration, FIG. 8).
  • the present disclosure can be used, for example, for temperature correction of MEMS sensors.
  • Temperature sensor 2 AD converter 3 MEMS chip 4 ASIC chip 5 Sensor device 10 Temperature sensor 11 Resistance bridge circuit 20 AD converter 21 1st voltage follower 22 1st AD converter 22A amplifier 23 2nd voltage follower 24 2nd AD converter 24A amplifier 25 Comparator 30 MEMS sensor 50 Sensor device 101 Constant current source 102 Diode 301 Resistance bridge circuit C Capacitor P31 to P38 Pad P41 to P48 Pad R1, R2, R3, R4 Resistance Ra, Rb, Rc, Rd MEMS resistance Ri Input resistance Ro Discharge resistance SW1, SW2, SW11, SW12 Switch SW31 Switch SW41 Switch SW42 Switch SWi Input switch SWo Discharge switch Wr Wire

Abstract

A temperature sensor (1) comprises a first resistor bridge circuit (11) having a first resistor (R1) and a second resistor (R2) connected in series between an application terminal of a power supply voltage (Vdd) and an application terminal of a ground potential, and a third resistor (R3) and a fourth resistor (R4) connected in series between the application terminal of the power supply voltage and the application terminal of the ground potential, wherein the first resistor is provided on the ground potential side and has a positive temperature characteristic with respect to a resistance value, the second resistor is provided on the power supply voltage side and has a negative temperature characteristic with respect to a resistance value, the third resistor is provided on the power supply voltage side and has a positive temperature characteristic with respect to a resistance value, and the fourth resistor is provided on the ground potential side and has a negative temperature characteristic with respect to a resistance value.

Description

温度センサ、およびセンサ装置Temperature sensors and sensor devices
　本開示は、温度センサに関する。 The present disclosure relates to a temperature sensor.
　従来、温度センサとして、定電流源とダイオードを用いた温度センサが知られている（例えば特許文献１の第４図）。 Conventionally, a temperature sensor using a constant current source and a diode is known as a temperature sensor (for example, FIG. 4 of Patent Document 1).
特開２００２－３６８１１０号公報Japanese Patent Application Publication No. 2002-368110
　しかしながら、上記のような温度センサでは、温度センサの出力をＡＤ変換（アナログデジタル変換）するＡＤコンバータを用いた場合に、ＡＤコンバータの出力が電源電圧の影響を受けてしまう課題があった。すなわち、ＡＤコンバータの出力が電源電圧特性を持ってしまう課題があった。 However, in the above-described temperature sensor, when an AD converter that performs AD conversion (analog-to-digital conversion) of the output of the temperature sensor is used, there is a problem that the output of the AD converter is affected by the power supply voltage. That is, there is a problem that the output of the AD converter has power supply voltage characteristics.
　上記状況に鑑み、本開示は、ＡＤコンバータを用いてＡＤ変換を行った場合に、ＡＤコンバータの出力が電源電圧特性を持つことを抑制できる温度センサを提供することを目的とする。 In view of the above situation, an object of the present disclosure is to provide a temperature sensor that can suppress the output of an AD converter from having power supply voltage characteristics when AD conversion is performed using an AD converter.
　例えば、本開示に係る温度センサは、電源電圧の印加端とグランド電位の印加端との間に直列に接続される第１抵抗および第２抵抗と、前記電源電圧の印加端と前記グランド電位の印加端との間に直列に接続される第３抵抗および第４抵抗と、を有する第１抵抗ブリッジ回路を備え、
　前記第１抵抗は、前記グランド電位側に設けられ、抵抗値に関して正の温度特性を有し、
　前記第２抵抗は、前記電源電圧側に設けられ、抵抗値に関して負の温度特性を有し、
　前記第３抵抗は、前記電源電圧側に設けられ、抵抗値に関して正の温度特性を有し、
　前記第４抵抗は、前記グランド電位側に設けられ、抵抗値に関して負の温度特性を有する構成としている。 For example, the temperature sensor according to the present disclosure includes a first resistor and a second resistor connected in series between a power supply voltage application end and a ground potential application end, and a first resistor and a second resistor connected in series between the power supply voltage application end and the ground potential application end. a first resistor bridge circuit having a third resistor and a fourth resistor connected in series between the application terminal;
The first resistor is provided on the ground potential side and has positive temperature characteristics with respect to resistance value,
The second resistor is provided on the power supply voltage side and has negative temperature characteristics with respect to resistance value,
The third resistor is provided on the power supply voltage side and has positive temperature characteristics with respect to resistance value,
The fourth resistor is provided on the ground potential side and has a negative temperature characteristic with respect to resistance value.
　本開示に係る温度センサによれば、ＡＤコンバータを用いてＡＤ変換を行った場合に、ＡＤコンバータの出力が電源電圧特性を持つことを抑制できる。 According to the temperature sensor according to the present disclosure, when AD conversion is performed using an AD converter, it is possible to suppress the output of the AD converter from having power supply voltage characteristics.
図１は、本開示の例示的な実施形態に係るセンサ装置の構成を示す図である。FIG. 1 is a diagram illustrating the configuration of a sensor device according to an exemplary embodiment of the present disclosure. 図２は、本開示の実施形態に係るＡＤ変換部の具体的な構成例を示す図である。FIG. 2 is a diagram illustrating a specific configuration example of the AD conversion unit according to the embodiment of the present disclosure. 図３は、出力電圧Ｖｏｕｔ１，Ｖｏｕｔ２およびコンパレータ出力ＣＰｏｕｔの挙動の一例を示すタイミングチャートである。FIG. 3 is a timing chart showing an example of the behavior of the output voltages Vout1, Vout2 and the comparator output CPout. 図４は、本開示の実施形態に係る温度センサにノイズが乗った場合の一例を示すタイミングチャートである。FIG. 4 is a timing chart illustrating an example of a case where noise is added to the temperature sensor according to the embodiment of the present disclosure. 図５は、各種抵抗の第１配置例を示す図である。FIG. 5 is a diagram showing a first example of arrangement of various resistors. 図６は、各種抵抗の第２配置例を示す図である。FIG. 6 is a diagram showing a second example of arrangement of various resistors. 図７は、各種抵抗の第３配置例を示す図である。FIG. 7 is a diagram showing a third arrangement example of various resistors. 図８は、各種抵抗の第４配置例を示す図である。FIG. 8 is a diagram showing a fourth example of arrangement of various resistors. 図９は、比較例に係るセンサ装置の構成を示す図である。FIG. 9 is a diagram showing the configuration of a sensor device according to a comparative example. 図１０は、比較例に係るＡＤ変換部の具体的な構成例を示す図である。FIG. 10 is a diagram illustrating a specific configuration example of an AD converter according to a comparative example. 図１１は、出力電圧Ｖｏｕｔとコンパレータ出力ＣＰｏｕｔの挙動の一例を示すタイミングチャートである。FIG. 11 is a timing chart showing an example of the behavior of the output voltage Vout and the comparator output CPout. 図１２は、比較例に係る温度センサにノイズが乗った場合の一例を示すタイミングチャートである。FIG. 12 is a timing chart showing an example of a case where noise is added to the temperature sensor according to the comparative example.
　以下、本開示の例示的な実施形態について図面を参照して説明する。 Hereinafter, exemplary embodiments of the present disclosure will be described with reference to the drawings.
＜１．比較例＞
　ここでは、本開示に係る例示的な実施形態について説明する前に、対比のための比較例について説明する。このような比較例を説明することで、課題が明らかとなる。 <1. Comparative example>
Here, before describing exemplary embodiments according to the present disclosure, a comparative example will be described for comparison. The problem becomes clear by explaining such a comparative example.
　図９は、比較例に係るセンサ装置５０の構成を示す図である。図９に示すセンサ装置５０は、温度センサ１０と、ＡＤ変換部２０と、ＭＥＭＳ（Micro　Electro　Mechanical　Systems）センサ３０と、を備える。 FIG. 9 is a diagram showing the configuration of a sensor device 50 according to a comparative example. The sensor device 50 shown in FIG. 9 includes a temperature sensor 10, an AD converter 20, and a MEMS (Micro Electro Mechanical Systems) sensor 30.
　温度センサ１０は、定電流源１０１と、ダイオード１０２と、を有する。定電流源１０１は、内部電圧Ｖｒｅｇの印加端とダイオード１０２のアノードとの間に接続される。ダイオード１０２のカソードは、グランド電位の印加端に接続される。ダイオード１０２のアノードは、スイッチＳＷ１０を介してＡＤ変換部２０に接続される。定電流源１０１により生成される定電流が流された状態でダイオード１０２のＶｆ（順電圧）は、温度に応じて変化する。上記ＶｆがＡＤ変換部２０によりＡＤ変換されることで、温度を検出することが可能となる。 The temperature sensor 10 includes a constant current source 101 and a diode 102. Constant current source 101 is connected between the application end of internal voltage Vreg and the anode of diode 102. A cathode of the diode 102 is connected to a ground potential application terminal. The anode of the diode 102 is connected to the AD converter 20 via the switch SW10. Vf (forward voltage) of the diode 102 changes depending on the temperature when a constant current generated by the constant current source 101 is applied. By AD converting the above Vf by the AD converter 20, it becomes possible to detect the temperature.
　ＭＥＭＳセンサ３０は、ＭＥＭＳ抵抗Ｒａ，Ｒｂ，Ｒｃ，Ｒｄから構成される抵抗ブリッジ回路３０１を有する。ＭＥＭＳ抵抗Ｒａ，Ｒｂは、電源電圧Ｖｄｄの印加端とグランド電位の印加端との間に直列に接続される。ＭＥＭＳ抵抗Ｒｃ，Ｒｄは、電源電圧Ｖｄｄの印加端とグランド電位の印加端との間に直列に接続される。 The MEMS sensor 30 has a resistive bridge circuit 301 composed of MEMS resistors Ra, Rb, Rc, and Rd. MEMS resistors Ra and Rb are connected in series between an end to which a power supply voltage Vdd is applied and an end to which a ground potential is applied. The MEMS resistors Rc and Rd are connected in series between an end to which a power supply voltage Vdd is applied and an end to which a ground potential is applied.
　ＭＥＭＳセンサ３０は、ダイヤフラムと抵抗ブリッジ回路３０１とを集積化して構成される。例えば、Ｓｉ基板をダイヤフラムとして、Ｓｉ基板の表面に不純物を拡散することで抵抗ブリッジ回路３０１を形成する。ＭＥＭＳセンサ３０は、ピエゾ抵抗効果を利用した圧力センサである。ピエゾ抵抗効果は、圧力が抵抗に加わった場合に抵抗値が変化する現象である。 The MEMS sensor 30 is configured by integrating a diaphragm and a resistive bridge circuit 301. For example, the resistance bridge circuit 301 is formed by using a Si substrate as a diaphragm and diffusing impurities into the surface of the Si substrate. The MEMS sensor 30 is a pressure sensor that utilizes a piezoresistance effect. The piezoresistive effect is a phenomenon in which the resistance value changes when pressure is applied to the resistance.
　ダイヤフラムに圧力が加わると、ＭＥＭＳ抵抗Ｒａ，Ｒｂ，Ｒｃ，Ｒｄに抵抗値変化が生じる。ＭＥＭＳ抵抗Ｒａ，Ｒｂ，Ｒｃ，Ｒｄの抵抗値に応じて、Ｒａ，Ｒｂが接続されるノードＮａと、Ｒｃ，Ｒｄが接続されるノードＮｂとの間に電圧差が生じる。ノードＮａは、スイッチＳＷ１２を介して、ノードＮｂは、スイッチＳＷ１１を介してそれぞれＡＤ変換部２０に接続される。上記電圧差がＡＤ変換部２０によりＡＤ変換されることで、圧力が検出される。 When pressure is applied to the diaphragm, resistance values change in the MEMS resistors Ra, Rb, Rc, and Rd. Depending on the resistance values of the MEMS resistors Ra, Rb, Rc, and Rd, a voltage difference occurs between the node Na to which Ra and Rb are connected and the node Nb to which Rc and Rd are connected. The node Na is connected to the AD converter 20 via the switch SW12, and the node Nb is connected to the AD converter 20 via the switch SW11. The pressure is detected by AD converting the voltage difference by the AD converter 20.
　なお、温度センサ１０により温度を検出する場合はスイッチＳＷ１０をオン状態、スイッチＳＷ１１，ＳＷ１２をオフ状態とし、ＭＥＭＳセンサ３０により圧力を検出する場合はスイッチＳＷ１０をオフ状態、スイッチＳＷ１１，ＳＷ１２をオン状態とする。 In addition, when detecting temperature with the temperature sensor 10, switch SW10 is turned on and switches SW11 and SW12 are turned off. When detecting pressure with the MEMS sensor 30, switch SW10 is turned off and switches SW11 and SW12 are turned on. shall be.
　ＡＤ変換部２０の後段には、図示しないＤＳＰ（digital　signal　processor）が設けられる。上記ＤＳＰにより、温度センサ１０により検出された温度に基づいてＭＥＭＳセンサ３０により検出された圧力値を補正することができる。すなわち、抵抗ブリッジ回路３０１の抵抗値の温度特性を温度センサ１０により補正する。 A DSP (digital signal processor), not shown, is provided downstream of the AD conversion unit 20. The DSP described above can correct the pressure value detected by the MEMS sensor 30 based on the temperature detected by the temperature sensor 10. That is, the temperature characteristic of the resistance value of the resistance bridge circuit 301 is corrected by the temperature sensor 10.
　図１０は、ＡＤ変換部２０の具体的な構成例を示す図である。ＡＤ変換部２０は、非反転増幅回路２０１と、ＡＤコンバータ２０２と、コンパレータ２０３と、を有する。 FIG. 10 is a diagram showing a specific configuration example of the AD conversion section 20. The AD converter 20 includes a non-inverting amplifier circuit 201, an AD converter 202, and a comparator 203.
　非反転増幅回路２０１は、アンプ（オペアンプ）２０１Ａと、抵抗２０１Ｂ，２０１Ｃと、を有する。アンプ２０１Ａの非反転入力端は、ダイオード１０２のアノードに接続される。なお、ダイオード１０２のアノードとアンプ２０１Ａの非反転入力端との間には、スイッチＳＷ１０（図９）が接続される。アンプ２０１Ａの出力端は、抵抗２０１Ｂの一端に接続される。抵抗２０１Ｂの他端とアンプ２０１Ａの反転入力端は、抵抗２０１Ｃの一端に接続される。抵抗２０１Ｃの他端は、グランド電位の印加端に接続される。ダイオード１０２のＶｆは、抵抗２０１Ｂ，２０１Ｃにより決まる増幅率で非反転増幅される。 The non-inverting amplifier circuit 201 includes an amplifier (op-amp) 201A and resistors 201B and 201C. A non-inverting input terminal of amplifier 201A is connected to the anode of diode 102. Note that a switch SW10 (FIG. 9) is connected between the anode of the diode 102 and the non-inverting input terminal of the amplifier 201A. The output end of amplifier 201A is connected to one end of resistor 201B. The other end of the resistor 201B and the inverting input end of the amplifier 201A are connected to one end of the resistor 201C. The other end of the resistor 201C is connected to a ground potential application end. Vf of the diode 102 is non-invertingly amplified with an amplification factor determined by the resistors 201B and 201C.
　ＡＤコンバータ２０２は、非反転増幅回路２０１の後段に設けられる。ＡＤコンバータ２０２は、積分型のＡＤコンバータとして構成され、入力抵抗Ｒｉと、入力スイッチＳＷｉと、放電抵抗Ｒｏと、放電スイッチＳＷｏと、コンデンサＣと、アンプ２０２Ａと、を有する。 The AD converter 202 is provided after the non-inverting amplifier circuit 201. The AD converter 202 is configured as an integral type AD converter, and includes an input resistor Ri, an input switch SWi, a discharge resistor Ro, a discharge switch SWo, a capacitor C, and an amplifier 202A.
　入力抵抗Ｒｉの一端は、アンプ２０１Ａの出力端に接続される。抵抗Ｒｉの他端は、入力スイッチＳＷｉの一端に接続される。入力スイッチＳＷｉの他端は、アンプ２０２Ａの第１入力端に接続される。放電スイッチＳＷｏの一端は、アンプ２０２Ａの第１入力端に接続される。放電スイッチＳＷｏの他端は、放電抵抗Ｒｏの一端に接続される。放電抵抗Ｒｏの他端は、グランド電位の印加端に接続される。コンデンサＣは、アンプ２０２Ａの第１入力端とアンプ２０２Ａの出力端との間に接続される。アンプ２０２Ａの第２入力端は、基準電圧Ｖｒｅｆの印加端に接続される。 One end of the input resistor Ri is connected to the output end of the amplifier 201A. The other end of the resistor Ri is connected to one end of the input switch SWi. The other end of the input switch SWi is connected to the first input end of the amplifier 202A. One end of the discharge switch SWo is connected to the first input terminal of the amplifier 202A. The other end of the discharge switch SWo is connected to one end of the discharge resistor Ro. The other end of the discharge resistor Ro is connected to a ground potential application end. Capacitor C is connected between the first input terminal of amplifier 202A and the output terminal of amplifier 202A. A second input terminal of the amplifier 202A is connected to an application terminal of the reference voltage Vref.
　コンパレータ２０３は、ＡＤコンバータ２０２の後段に設けられる。コンパレータ２０３の第１入力端は、アンプ２０２Ａの出力端に接続される。コンパレータ２０３の第２入力端は、基準電圧Ｖｒｅｆの印加端に接続される。 The comparator 203 is provided after the AD converter 202. A first input terminal of comparator 203 is connected to an output terminal of amplifier 202A. A second input terminal of the comparator 203 is connected to an application terminal of the reference voltage Vref.
　ここで、ＡＤコンバータ２０２およびコンパレータ２０３の動作について説明する。まず、入力スイッチＳＷｉをオン状態、放電スイッチＳＷｏをオフ状態とすることで、入力抵抗Ｒｉを介して入力電流Ｉｉが流れ、コンデンサＣが充電される。このとき、充電時間をＴｉ、コンデンサＣの電圧をＶｉｎｔとすると、（１）式が成り立つ。
　Ｖｉｎｔ＝（Ｉｉ×Ｔｉ）／Ｃ＝Ｖｒｅｆ－Ｖｏｕｔ（Ｔ＝Ｔｉ）　　（１）
　ただし、Ｖｏｕｔ（Ｔ＝Ｔｉ）は、充電時間Ｔｉ経過後のアンプ２０２Ａの出力電圧 Here, the operations of the AD converter 202 and the comparator 203 will be explained. First, by turning on the input switch SWi and turning off the discharge switch SWo, the input current Ii flows through the input resistor Ri, and the capacitor C is charged. At this time, if the charging time is Ti and the voltage of the capacitor C is Vint, then equation (1) holds true.
Vint=(Ii×Ti)/C=Vref−Vout (T=Ti) (1)
However, Vout (T=Ti) is the output voltage of the amplifier 202A after the charging time Ti has elapsed.
　ここで、図１１は、出力電圧Ｖｏｕｔとコンパレータ２０３から出力されるコンパレータ出力ＣＰｏｕｔの挙動の一例をタイミングチャートに示す図である。図１１に示すように、充電時間Ｔｉにおいて出力電圧Ｖｏｕｔは、基準電圧Ｖｒｅｆから徐々に低下する。 Here, FIG. 11 is a timing chart showing an example of the behavior of the output voltage Vout and the comparator output CPout output from the comparator 203. As shown in FIG. 11, the output voltage Vout gradually decreases from the reference voltage Vref during the charging time Ti.
　次に、入力スイッチＳＷｉをオフ状態、放電スイッチＳＷｏをオン状態とすることで、放電抵抗Ｒｏを介して放電電流Ｉｏが流れ、コンデンサＣが放電される。このとき、充電時間ＴｉによってコンデンサＣに充電された電荷を放電するのに要する放電時間をＴｏとすれば、（２）式が成り立つ。
　Ｔｏ＝（Ｃ×Ｖｉｎｔ）／Ｉｏ　　（２） Next, by turning off the input switch SWi and turning on the discharge switch SWo, a discharge current Io flows through the discharge resistor Ro, and the capacitor C is discharged. At this time, if To is the discharging time required to discharge the electric charge charged in the capacitor C by the charging time Ti, the formula (2) holds true.
To=(C×Vint)/Io (2)
　（１）式を（２）式に代入すれば、
　Ｔｏ＝（Ｃ×Ｖｉｎｔ）／Ｉｏ＝（Ｉｉ×Ｔｉ）／Ｉｏ　　（３） If we substitute equation (1) into equation (2), we get
To=(C×Vint)/Io=(Ii×Ti)/Io (3)
　ここで、Ｉｉ＝（Ｖｉｎ－Ｖｒｅｆ）／Ｒｉ
　　　　　Ｉｏ＝Ｖｒｅｆ／Ｒｏである（ただし、Ｖｉｎは、非反転増幅回路２０１の出力電圧）。Ｒｉ＝Ｒｏとすれば、（３）式は、
　Ｔｏ／Ｔｉ＝（Ｖｉｎ－Ｖｒｅｆ）／Ｖｒｅｆ　　（４）
　　となる。 Here, Ii=(Vin-Vref)/Ri
Io=Vref/Ro (where Vin is the output voltage of the non-inverting amplifier circuit 201). If Ri=Ro, equation (3) becomes
To/Ti=(Vin-Vref)/Vref (4)
becomes.
　図１１に示すように、放電時間Ｔｏにおいて出力電圧Ｖｏｕｔは徐々に上昇し、放電時間Ｔｏが経過したときに出力電圧Ｖｏｕｔは基準電圧Ｖｒｅｆに到達する。コンパレータ２０３は、出力電圧Ｖｏｕｔを基準電圧Ｖｒｅｆと比較するため、放電時間Ｔｏが経過したときにコンパレータ出力Ｃｐｏｕｔがローレベルからハイレベルに切り替わる。 As shown in FIG. 11, the output voltage Vout gradually increases during the discharge time To, and when the discharge time To has elapsed, the output voltage Vout reaches the reference voltage Vref. Since the comparator 203 compares the output voltage Vout with the reference voltage Vref, the comparator output Cpout switches from low level to high level when the discharge time To has elapsed.
　（４）式より、充電時間Ｔｉを固定値とすれば、入力電圧Ｖｉｎに応じて放電時間Ｔｏが変化する。入力電圧Ｖｉｎは、ダイオード１０２のＶｆを非反転増幅回路２０１により増幅した電圧である。従って、充電時間Ｔｉが経過したタイミングからコンパレータ出力ＣＰｏｕｔのレベルが切り替わるタイミングまでの時間である放電時間Ｔｏをカウントすることで、Ｖｆすなわち温度を検出することができる。なお、図１１に示す破線の出力電圧Ｖｏｕｔは、実線の出力電圧Ｖｏｕｔの場合よりもＶｆすなわち入力電圧Ｖｉｎが小さい場合を示し、放電時間Ｔｏが短くなる。 From equation (4), if the charging time Ti is a fixed value, the discharging time To changes depending on the input voltage Vin. The input voltage Vin is a voltage obtained by amplifying Vf of the diode 102 by the non-inverting amplifier circuit 201. Therefore, Vf, that is, temperature can be detected by counting the discharging time To, which is the time from the timing when the charging time Ti has elapsed to the timing when the level of the comparator output CPout is switched. Note that the output voltage Vout shown by the broken line in FIG. 11 indicates a case where Vf, that is, the input voltage Vin is smaller than the output voltage Vout shown by the solid line, and the discharge time To is shorter.
　ここで、基準電圧Ｖｒｅｆ＝（１／２）×Ｖｄｄとしたとする。この場合、（４）式は、
　Ｔｏ／Ｔｉ＝（Ｖｆ×Ａｖ－（１／２）×Ｖｄｄ）／（（１／２）×Ｖｄｄ）
　となる。ただし、Ａｖは、非反転増幅回路２０１の増幅率である。
　従って、ＡＤコンバータ２０２をＶｄｄ基準で動作させると、ＶｆはＶｄｄの影響を受けないので、ＡＤコンバータ２０２の出力（Ｔｏ／Ｔｉ）はＶｄｄ、すなわち電源特性の影響を受けてしまう。これにより、電源特性の影響を受けないようにするには、ＡＤコンバータ２０２も内部電圧Ｖｒｅｇ基準で動作させる必要がある。この場合、Ｖｄｄが変動してもＶｒｅｇが変動しないようにＶｒｅｇを生成するＬＤＯ（Low　Dropout）などの定電圧源が必要になってしまう。 Here, it is assumed that the reference voltage Vref=(1/2)×Vdd. In this case, equation (4) is
To/Ti=(Vf×Av-(1/2)×Vdd)/((1/2)×Vdd)
becomes. However, Av is the amplification factor of the non-inverting amplifier circuit 201.
Therefore, when the AD converter 202 is operated based on Vdd, Vf is not affected by Vdd, so the output (To/Ti) of the AD converter 202 is affected by Vdd, that is, the power supply characteristics. Therefore, in order to avoid being affected by the power supply characteristics, the AD converter 202 also needs to be operated based on the internal voltage Vreg. In this case, a constant voltage source such as an LDO (Low Dropout) is required to generate Vreg so that Vreg does not vary even if Vdd varies.
　また、温度センサ１０にノイズが乗った場合、次のような課題が生じる。図１２は、温度センサ１０にノイズが乗った場合の一例を示す図である。図１２は、図１１と同様、出力電圧Ｖｏｕｔとコンパレータ出力ＣＰｏｕｔの挙動を示す。図１２において、実線の出力電圧Ｖｏｕｔがノイズが乗っていない場合であり、破線の出力電圧Ｖｏｕｔがノイズが乗った場合である。破線の出力電圧Ｖｏｕｔのように、ノイズによって入力電圧Ｖｉｎが大きくなると、放電時間Ｔｏが長くなり、放電時間Ｔｏの誤差ΔＴｏが生じてしまう。従って、温度検出の誤差が生じる課題がある。 Further, when noise is applied to the temperature sensor 10, the following problem occurs. FIG. 12 is a diagram showing an example of a case where noise is added to the temperature sensor 10. Similar to FIG. 11, FIG. 12 shows the behavior of the output voltage Vout and the comparator output CPout. In FIG. 12, the solid line shows the output voltage Vout when there is no noise, and the broken line shows the output voltage Vout when there is noise. When the input voltage Vin increases due to noise, as shown by the output voltage Vout shown by the broken line, the discharge time To becomes longer, resulting in an error ΔTo in the discharge time To. Therefore, there is a problem that errors in temperature detection occur.
＜２．本開示のセンサ装置＞
　上記のような課題を解決すべく、本開示の実施形態が実施される。図１は、本開示の例示的な実施形態に係るセンサ装置５の構成を示す図である。 <2. Sensor device of the present disclosure>
Embodiments of the present disclosure are implemented to solve the above problems. FIG. 1 is a diagram showing the configuration of a sensor device 5 according to an exemplary embodiment of the present disclosure.
　図１に示すセンサ装置５は、温度センサ１と、ＡＤ変換部２と、ＭＥＭＳセンサ３０と、スイッチＳＷ１，ＳＷ２，ＳＷ１１，ＳＷ１２と、を有する。 The sensor device 5 shown in FIG. 1 includes a temperature sensor 1, an AD converter 2, a MEMS sensor 30, and switches SW1, SW2, SW11, and SW12.
　温度センサ１は、抵抗Ｒ１，Ｒ２，Ｒ３，Ｒ４から構成される抵抗ブリッジ回路１１を有する。抵抗Ｒ２，Ｒ１は、電源電圧Ｖｄｄの印加端とグランド電位の印加端との間に直列に接続される。抵抗Ｒ２は電源電圧Ｖｄｄ側に設けられ、抵抗Ｒ１はグランド電位側に設けられる。抵抗Ｒ３，Ｒ４は、電源電圧Ｖｄｄの印加端とグランド電位の印加端との間に直列に接続される。抵抗Ｒ３は電源電圧Ｖｄｄ側に設けられ、抵抗Ｒ４はグランド電位側に設けられる。 The temperature sensor 1 has a resistive bridge circuit 11 composed of resistors R1, R2, R3, and R4. Resistors R2 and R1 are connected in series between an end to which power supply voltage Vdd is applied and an end to which ground potential is applied. The resistor R2 is provided on the power supply voltage Vdd side, and the resistor R1 is provided on the ground potential side. Resistors R3 and R4 are connected in series between an end to which power supply voltage Vdd is applied and an end to which ground potential is applied. The resistor R3 is provided on the power supply voltage Vdd side, and the resistor R4 is provided on the ground potential side.
　抵抗Ｒ１，Ｒ３は、抵抗値に関する正の温度特性を有する。正の温度特性とは、温度が高くなるほど抵抗値が大きくなる特性である。抵抗Ｒ２，Ｒ４は、抵抗値に関する負の温度特性を有する。負の温度特性とは、温度が高くなるほど抵抗値が小さくなる特性である。 The resistors R1 and R3 have positive temperature characteristics regarding resistance values. The positive temperature characteristic is a characteristic in which the higher the temperature, the greater the resistance value. Resistors R2 and R4 have negative temperature characteristics regarding resistance values. Negative temperature characteristics are characteristics in which the higher the temperature, the smaller the resistance value.
　抵抗Ｒ２，Ｒ１が接続されるノードＮ１は、スイッチＳＷ２を介してＡＤ変換部２に接続される。抵抗Ｒ３，Ｒ４が接続されるノードＮ２は、スイッチＳＷ１を介してＡＤ変換部２に接続される。温度が高くなるほど、ノードＮ１，Ｎ２間の電圧差は大きくなる。ＡＤ変換部２は、上記電圧差をＡＤ変換することで、温度を検出することができる。 A node N1 to which resistors R2 and R1 are connected is connected to the AD converter 2 via a switch SW2. A node N2 to which resistors R3 and R4 are connected is connected to the AD converter 2 via a switch SW1. The higher the temperature, the greater the voltage difference between nodes N1 and N2. The AD converter 2 can detect the temperature by AD converting the voltage difference.
　ＭＥＭＳセンサ３０は、先述した比較例（図９）と同様の構成である。ノードＮａは、スイッチＳＷ１２を介してＡＤ変換部２に接続される。ノードＮｂは、スイッチＳＷ１１を介してＡＤ変換部２に接続される。圧力に応じてノードＮａ，Ｎｂ間に生じる電圧差をＡＤ変換部２によりＡＤ変換することで、圧力を検出することができる。 The MEMS sensor 30 has the same configuration as the comparative example (FIG. 9) described above. Node Na is connected to AD converter 2 via switch SW12. Node Nb is connected to AD converter 2 via switch SW11. The pressure can be detected by AD converting the voltage difference generated between the nodes Na and Nb depending on the pressure by the AD converter 2.
　なお、温度センサ１により温度を検出する場合はスイッチＳＷ１，ＳＷ２をオン状態、スイッチＳＷ１１，ＳＷ１２をオフ状態とし、ＭＥＭＳセンサ３０により圧力を検出する場合はスイッチＳＷ１，ＳＷ２をオフ状態、スイッチＳＷ１１，ＳＷ１２をオン状態とする。 Note that when temperature is detected by the temperature sensor 1, the switches SW1 and SW2 are turned on and switches SW11 and SW12 are turned off. When the pressure is detected by the MEMS sensor 30, the switches SW1 and SW2 are turned off and the switches SW11 and SW12 are turned off. SW12 is turned on.
　ＡＤ変換部２の後段には、図示しないＤＳＰが設けられる。上記ＤＳＰにより、温度センサ１により検出された温度に基づいてＭＥＭＳセンサ３０により検出された圧力値を補正することができる。 A DSP (not shown) is provided downstream of the AD converter 2. The DSP described above can correct the pressure value detected by the MEMS sensor 30 based on the temperature detected by the temperature sensor 1.
　図２は、ＡＤ変換部２の具体的な構成例を示す図である。ＡＤ変換部２は、第１ボルテージフォロワ２１と、第１ＡＤコンバータ２２と、第２ボルテージフォロワ２３と、第２ＡＤコンバータ２４と、コンパレータ２５と、を有する。 FIG. 2 is a diagram showing a specific configuration example of the AD conversion section 2. The AD converter 2 includes a first voltage follower 21 , a first AD converter 22 , a second voltage follower 23 , a second AD converter 24 , and a comparator 25 .
　抵抗ブリッジ回路１１におけるノードＮ１の電圧が第１ボルテージフォロワ２１に入力される。なお、ノードＮ１と第１ボルテージフォロワ２１との間には、スイッチＳＷ２（図１）が接続される。第１ＡＤコンバータ２２は、第１ボルテージフォロワ２１の後段に設けられ、先述した比較例（図１０）に係るＡＤコンバータ２０２と同様の構成であるため、詳述は省く。第１ボルテージフォロワ２１から出力される入力電圧Ｖｉｎ１は、第１ＡＤコンバータ２２における入力抵抗Ｒｉの一端に印加される。 The voltage at the node N1 in the resistor bridge circuit 11 is input to the first voltage follower 21. Note that a switch SW2 (FIG. 1) is connected between the node N1 and the first voltage follower 21. The first AD converter 22 is provided after the first voltage follower 21 and has the same configuration as the AD converter 202 according to the comparative example (FIG. 10) described above, so a detailed description thereof will be omitted. The input voltage Vin1 output from the first voltage follower 21 is applied to one end of the input resistor Ri in the first AD converter 22.
　抵抗ブリッジ回路１１におけるノードＮ２の電圧が第２ボルテージフォロワ２３に入力される。なお、ノードＮ２と第２ボルテージフォロワ２３との間には、スイッチＳＷ１（図１）が接続される。第２ＡＤコンバータ２４は、第２ボルテージフォロワ２３の後段に設けられ、先述した比較例（図１０）に係るＡＤコンバータ２０２と基本的に同様の構成であるため、詳述は省く。ただし、第２ＡＤコンバータ２４においては、放電抵抗Ｒｏには電源電圧Ｖｄｄの印加端が接続される。第２ボルテージフォロワ２３から出力される入力電圧Ｖｉｎ２は、第２ＡＤコンバータ２４における入力抵抗Ｒｉの一端に印加される。 The voltage at the node N2 in the resistor bridge circuit 11 is input to the second voltage follower 23. Note that a switch SW1 (FIG. 1) is connected between the node N2 and the second voltage follower 23. The second AD converter 24 is provided after the second voltage follower 23 and has basically the same configuration as the AD converter 202 according to the comparative example (FIG. 10) described above, so a detailed description thereof will be omitted. However, in the second AD converter 24, the end to which the power supply voltage Vdd is applied is connected to the discharge resistor Ro. The input voltage Vin2 output from the second voltage follower 23 is applied to one end of the input resistor Ri in the second AD converter 24.
　コンパレータ２５は、第１ＡＤコンバータ２２および第２ＡＤコンバータ２４の後段に設けられる。第１ＡＤコンバータ２２におけるアンプ２２Ａから出力される出力電圧Ｖｏｕｔ１は、コンパレータ２５の第１入力端に印加される。第２ＡＤコンバータ２４におけるアンプ２４Ａから出力される出力電圧Ｖｏｕｔ２は、コンパレータ２５の第２入力端に印加される。コンパレータ２５は、出力電圧Ｖｏｕｔ１とＶｏｕｔ２を比較した結果をコンパレータ出力ＣＰｏｕｔとして出力する。 The comparator 25 is provided after the first AD converter 22 and the second AD converter 24. The output voltage Vout1 output from the amplifier 22A in the first AD converter 22 is applied to the first input terminal of the comparator 25. The output voltage Vout2 output from the amplifier 24A in the second AD converter 24 is applied to the second input terminal of the comparator 25. The comparator 25 outputs the result of comparing the output voltages Vout1 and Vout2 as a comparator output CPout.
　第１ＡＤコンバータ２２においては、入力スイッチＳＷｉをオン状態、放電スイッチＳＷｏをオフ状態とすることで入力抵抗Ｒｉに入力電流Ｉｉが流れ、コンデンサＣの充電が行われる。その後、入力スイッチＳＷｉをオフ状態、放電スイッチＳＷｏをオン状態とすることで放電抵抗Ｒｏに放電電流Ｉｏが流れ、コンデンサＣの放電が行われる。このとき、図２に示すように、入力電流Ｉｉはアンプ２２Ａ側に流れ、放電電流Ｉｏはグランド電位側に流れる。 In the first AD converter 22, the input switch SWi is turned on and the discharge switch SWo is turned off, so that the input current Ii flows through the input resistor Ri, and the capacitor C is charged. Thereafter, by turning the input switch SWi off and turning the discharge switch SWo on, a discharge current Io flows through the discharge resistor Ro, and the capacitor C is discharged. At this time, as shown in FIG. 2, the input current Ii flows to the amplifier 22A side, and the discharge current Io flows to the ground potential side.
　ここで、図３は、出力電圧Ｖｏｕｔ１，Ｖｏｕｔ２およびコンパレータ出力ＣＰｏｕｔの挙動の一例を示すタイミングチャートである。出力電圧Ｖｏｕｔ１は、充電時間Ｔｉにおいて基準電圧Ｖｒｅｆから低下し、放電時間Ｔｏにおいて基準電圧Ｖｒｅｆまで上昇する。 Here, FIG. 3 is a timing chart showing an example of the behavior of the output voltages Vout1, Vout2 and the comparator output CPout. The output voltage Vout1 decreases from the reference voltage Vref during the charging time Ti, and rises to the reference voltage Vref during the discharging time To.
　ここで、Ｖｒｅｆ＝（１／２）×Ｖｄｄとしているため、（４）式により、
　Ｔｏ／Ｔｉ＝（Ｖｉｎ１－Ｖｒｅｆ）／Ｖｒｅｆ＝（（Ｖｄｄ×Ｒ１）／（Ｒ１＋Ｒ２）－（１／２）×Ｖｄｄ）／（（１／２）×Ｖｄｄ）　（５） Here, since Vref=(1/2)×Vdd, according to equation (4),
To/Ti=(Vin1-Vref)/Vref=((Vdd×R1)/(R1+R2)-(1/2)×Vdd)/((1/2)×Vdd) (5)
　（５）式から、Ｖｄｄをキャンセルすることができることがわかる。従って、第１ＡＤコンバータ２２の出力において、Ｖｄｄの影響を抑制することができる。 From equation (5), it can be seen that Vdd can be canceled. Therefore, the influence of Vdd on the output of the first AD converter 22 can be suppressed.
　第２ＡＤコンバータ２４においては、入力スイッチＳＷｉをオン状態、放電スイッチＳＷｏをオフ状態とすることで入力抵抗Ｒｉに入力電流Ｉｉが流れ、コンデンサＣの充電が行われる。その後、入力スイッチＳＷｉをオフ状態、放電スイッチＳＷｏをオン状態とすることで放電抵抗Ｒｏに放電電流Ｉｏが流れ、コンデンサＣの放電が行われる。このとき、図２に示すように、入力電流Ｉｉは第２ボルテージフォロワ２３側に流れ、放電電流Ｉｏはアンプ２４Ａ側に流れる。 In the second AD converter 24, the input switch SWi is turned on and the discharge switch SWo is turned off, so that the input current Ii flows through the input resistor Ri, and the capacitor C is charged. Thereafter, by turning the input switch SWi off and turning the discharge switch SWo on, a discharge current Io flows through the discharge resistor Ro, and the capacitor C is discharged. At this time, as shown in FIG. 2, the input current Ii flows to the second voltage follower 23 side, and the discharge current Io flows to the amplifier 24A side.
　これにより、図３に示すように、出力電圧Ｖｏｕｔ２は、充電時間Ｔｉにおいて基準電圧Ｖｒｅｆから上昇し、放電時間Ｔｏにおいて基準電圧Ｖｒｅｆまで低下する。第２ＡＤコンバータ２４の出力においても、Ｖｄｄの影響を抑制することができる。 As a result, as shown in FIG. 3, the output voltage Vout2 increases from the reference voltage Vref during the charging time Ti, and decreases to the reference voltage Vref during the discharging time To. The influence of Vdd can also be suppressed on the output of the second AD converter 24.
　図３に示すように、放電時間Ｔｏが経過したときに出力電圧Ｖｏｕｔ１，Ｖｏｕｔ２の大小が逆転し、コンパレータ出力ＣＰｏｕｔはローレベルからハイレベルに切り替わる。固定値である充電時間Ｔｉの経過したときからコンパレータ出力ＣＰｏｕｔのレベルの切り替わりまでの時間（放電時間Ｔｏ）をカウントすることで、入力電圧Ｖｉｎ１，Ｖｉｎ２、ひいては温度を検出することができる。 As shown in FIG. 3, when the discharge time To has elapsed, the magnitudes of the output voltages Vout1 and Vout2 are reversed, and the comparator output CPout switches from low level to high level. By counting the time (discharge time To) from when the charging time Ti, which is a fixed value, elapses until the level of the comparator output CPout changes, the input voltages Vin1 and Vin2, and eventually the temperature can be detected.
　また、図４は、温度センサ１にノイズが乗った場合の一例を示す図である。図４は、図３と同様、出力電圧Ｖｏｕｔ１，Ｖｏｕｔ２とコンパレータ出力ＣＰｏｕｔの挙動を示す。図４において、実線の出力電圧Ｖｏｕｔがノイズが乗っていない場合であり、破線の出力電圧Ｖｏｕｔがノイズが乗った場合である。ノイズは、ノードＮ１，Ｎ２に同相で影響を及ぼす同相ノイズ（ＰＳＲＲなど）である。これにより、図４の破線で示す出力電圧Ｖｏｕｔ１，Ｖｏｕｔ２のように、ノイズが乗った場合でも出力電圧Ｖｏｕｔ１，Ｖｏｕｔ２は同じ方向にずれるため、放電時間Ｔｏの誤差は抑制される。このように、本開示に係る温度センサ１とＡＤ変換部２の構成によれば、ノイズ耐性が向上する。 Further, FIG. 4 is a diagram showing an example when noise is added to the temperature sensor 1. Similar to FIG. 3, FIG. 4 shows the behavior of the output voltages Vout1, Vout2 and the comparator output CPout. In FIG. 4, the solid line shows the output voltage Vout when there is no noise, and the broken line shows the output voltage Vout when there is noise. The noise is common mode noise (such as PSRR) that affects nodes N1 and N2 in the same phase. As a result, even when noise is added to the output voltages Vout1 and Vout2 shown by broken lines in FIG. 4, the output voltages Vout1 and Vout2 shift in the same direction, so that the error in the discharge time To is suppressed. In this way, according to the configuration of the temperature sensor 1 and the AD converter 2 according to the present disclosure, noise resistance is improved.
　なお、ＭＥＭＳセンサ３０におけるノードＮａは、スイッチＳＷ１２を介して第１ボルテージフォロワ２１に接続され、ＭＥＭＳセンサ３０におけるノードＮｂは、スイッチＳＷ１１を介して第２ボルテージフォロワ２３に接続される。これにより、温度検出の場合と同様に、放電時間Ｔｏを計測することで圧力を検出することができる。ＭＥＭＳセンサ３０にノイズが乗った場合でも、温度検出の場合と同様にノイズ耐性が向上する。すなわち、温度センサ１はＭＥＭＳセンサ３０と同様の回路構成としているため、ＭＥＭＳセンサ３０との親和性を高くすることができる。 Note that the node Na in the MEMS sensor 30 is connected to the first voltage follower 21 via the switch SW12, and the node Nb in the MEMS sensor 30 is connected to the second voltage follower 23 via the switch SW11. Thereby, as in the case of temperature detection, pressure can be detected by measuring the discharge time To. Even when noise is applied to the MEMS sensor 30, noise resistance is improved as in the case of temperature detection. That is, since the temperature sensor 1 has the same circuit configuration as the MEMS sensor 30, compatibility with the MEMS sensor 30 can be improved.
＜３．抵抗の第１配置例＞
　温度センサ１における抵抗Ｒ１～Ｒ４、およびＭＥＭＳセンサ３０におけるＭＥＭＳ抵抗Ｒａ～Ｒｄの各種配置例について、以下説明する。 <3. First example of resistor arrangement>
Various arrangement examples of the resistors R1 to R4 in the temperature sensor 1 and the MEMS resistors Ra to Rd in the MEMS sensor 30 will be described below.
　図５は、抵抗Ｒ１～Ｒ４およびＭＥＭＳ抵抗Ｒａ～Ｒｄの第１配置例を示す図である。図５に示す構成では、センサ装置５は、ＭＥＭＳチップ３とＡＳＩＣ（application　specific　integrated　circuit）チップ４を有する。なお、これは後述する図６～図８に示す構成でも同様である。 FIG. 5 is a diagram showing a first arrangement example of the resistors R1 to R4 and the MEMS resistors Ra to Rd. In the configuration shown in FIG. 5, the sensor device 5 includes a MEMS chip 3 and an ASIC (application specific integrated circuit) chip 4. Note that this also applies to the configurations shown in FIGS. 6 to 8, which will be described later.
　図５に示すように、抵抗Ｒ１～Ｒ４およびＭＥＭＳ抵抗Ｒａ～Ｒｄは、ＭＥＭＳチップ３に集積化される。ＭＥＭＳチップ３には、ダイヤフラムも集積化される。このような構成により、抵抗Ｒ２，Ｒ３に接続される電源電圧Ｖｄｄ印加用のパッドＰ３１、ノードＮ２に接続されるパッドＰ３２、ノードＮ１に接続されるパッドＰ３３、および抵抗Ｒ１，Ｒ４に接続されるグランド電位印加用のパッドＰ３４がＭＥＭＳチップ３に設けられる。 As shown in FIG. 5, the resistors R1 to R4 and the MEMS resistors Ra to Rd are integrated into the MEMS chip 3. A diaphragm is also integrated into the MEMS chip 3. With this configuration, the pad P31 for applying the power supply voltage Vdd is connected to the resistors R2 and R3, the pad P32 is connected to the node N2, the pad P33 is connected to the node N1, and the pad P31 is connected to the resistors R1 and R4. A pad P34 for applying a ground potential is provided on the MEMS chip 3.
　さらに、抵抗Ｒａ，Ｒｃに接続される電源電圧Ｖｄｄ印加用のパッドＰ３５、ノードＮｂに接続されるパッドＰ３６、ノードＮａに接続されるパッドＰ３７、および抵抗Ｒｂ，Ｒｄに接続されるグランド電位印加用のパッドＰ３８がＭＥＭＳチップ３に設けられる。 Further, a pad P35 for applying the power supply voltage Vdd connected to the resistors Ra and Rc, a pad P36 connected to the node Nb, a pad P37 connected to the node Na, and a pad P37 for applying the ground potential connected to the resistors Rb and Rd. A pad P38 is provided on the MEMS chip 3.
　ＡＳＩＣチップ４には、パッドＰ３１～Ｐ３８それぞれとワイヤＷｒにより接続されるパッドＰ４１～Ｐ４８が設けられる。 The ASIC chip 4 is provided with pads P41 to P48 that are connected to pads P31 to P38, respectively, by wires Wr.
　また、ＡＳＩＣチップ４には、ＡＤコンバータ２２，２４およびＤＳＰ４００が設けられる。これは、後述する図６～図８に示す構成も同様である。 Further, the ASIC chip 4 is provided with AD converters 22 and 24 and a DSP 400. This also applies to the configurations shown in FIGS. 6 to 8, which will be described later.
　このように、温度検出用の抵抗Ｒ１～Ｒ４をＭＥＭＳチップ３に設けるため、ＭＥＭＳチップ３の温度を直接測定でき、ＭＥＭＳセンサ３０の温度との誤差要因が少なくなる。 In this way, since the temperature detection resistors R1 to R4 are provided on the MEMS chip 3, the temperature of the MEMS chip 3 can be directly measured, and the error factors with the temperature of the MEMS sensor 30 are reduced.
＜４．抵抗の第２配置例＞
　図６は、抵抗Ｒ１～Ｒ４およびＭＥＭＳ抵抗Ｒａ～Ｒｄの第２配置例を示す図である。図６に示す構成では、抵抗Ｒ１～Ｒ４をＡＳＩＣチップ４に設けている。これにより、抵抗Ｒａ，Ｒｃに接続される電源電圧Ｖｄｄ印加用のパッドＰ３１、ノードＮｂに接続されるパッドＰ３２、ノードＮａに接続されるパッドＰ３３、および抵抗Ｒｂ，Ｒｄに接続されるグランド電位印加用のパッドＰ３４がＭＥＭＳチップ３に設けられる。ＡＳＩＣチップ４には、パッドＰ３１～Ｐ３４それぞれとワイヤＷｒにより接続されるパッドＰ４１～Ｐ４４が設けられる。 <4. Second arrangement example of resistor>
FIG. 6 is a diagram showing a second arrangement example of the resistors R1 to R4 and the MEMS resistors Ra to Rd. In the configuration shown in FIG. 6, resistors R1 to R4 are provided on the ASIC chip 4. Thereby, pad P31 for applying power supply voltage Vdd connected to resistors Ra and Rc, pad P32 connected to node Nb, pad P33 connected to node Na, and ground potential application connected to resistors Rb and Rd. A pad P34 for this purpose is provided on the MEMS chip 3. The ASIC chip 4 is provided with pads P41 to P44 connected to the pads P31 to P34, respectively, by wires Wr.
　このような構成により、パッドおよびワイヤの数を減らすことができる。また、所定の温度特性を有する抵抗Ｒ１～Ｒ４をＭＥＭＳチップ３と異なるＡＳＩＣチップ４に設けることで、抵抗Ｒ１～Ｒ４の形成が容易となる。 With such a configuration, the number of pads and wires can be reduced. Further, by providing the resistors R1 to R4 having predetermined temperature characteristics in the ASIC chip 4 different from the MEMS chip 3, the resistors R1 to R4 can be easily formed.
＜５．抵抗の第３配置例＞
　図７は、抵抗Ｒ１～Ｒ４およびＭＥＭＳ抵抗Ｒａ～Ｒｄの第３配置例を示す図である。図７に示す構成では、抵抗Ｒ３，Ｒ１をＭＥＭＳチップ３に設け、抵抗Ｒ２，Ｒ４をＡＳＩＣチップ４に設けている。 <5. Third arrangement example of resistor>
FIG. 7 is a diagram showing a third arrangement example of resistors R1 to R4 and MEMS resistors Ra to Rd. In the configuration shown in FIG. 7, resistors R3 and R1 are provided on the MEMS chip 3, and resistors R2 and R4 are provided on the ASIC chip 4.
　抵抗Ｒａ，Ｒｃに接続される電源電圧Ｖｄｄ印加用のパッドＰ３１、ノードＮｂに接続されるパッドＰ３２、ノードＮａに接続されるパッドＰ３３、および抵抗Ｒｂ，Ｒｄに接続されるグランド電位印加用のパッドＰ３４がＭＥＭＳチップ３に設けられる。抵抗Ｒ３の一端は、パッドＰ３１に接続される。抵抗Ｒ３の他端に接続されるパッドＰ３５がＭＥＭＳチップ３に設けられる。抵抗Ｒ１の一端に接続されるパッドＰ３６と、抵抗Ｒ１の他端に接続されるパッドＰ３７がＭＥＭＳチップ３に設けられる。 Pad P31 for applying power supply voltage Vdd connected to resistors Ra and Rc, pad P32 connected to node Nb, pad P33 connected to node Na, and pad for applying ground potential connected to resistors Rb and Rd. P34 is provided on the MEMS chip 3. One end of resistor R3 is connected to pad P31. A pad P35 connected to the other end of the resistor R3 is provided on the MEMS chip 3. The MEMS chip 3 is provided with a pad P36 connected to one end of the resistor R1 and a pad P37 connected to the other end of the resistor R1.
　ＡＳＩＣチップ４には、パッドＰ３１～Ｐ３７それぞれとワイヤＷｒにより接続されるパッドＰ４１～Ｐ４７が設けられる。パッドＰ４４に接続される一端を有するスイッチＳＷ４１がＡＳＩＣチップ４に設けられる。スイッチＳＷ４１の他端は、グランド電位の印加端に接続される。抵抗Ｒ２の一端は、パッドＰ４１に接続される。抵抗Ｒ２の他端は、パッドＰ４６に接続される。抵抗Ｒ４の一端は、パッドＰ４５に接続される。抵抗Ｒ４の他端およびパッドＰ４７に接続される一端を有するスイッチＳＷ４２がＡＳＩＣチップ４に設けられる。スイッチＳＷ４２の他端は、グランド電位の印加端に接続される。 The ASIC chip 4 is provided with pads P41 to P47 that are connected to pads P31 to P37, respectively, by wires Wr. A switch SW41 having one end connected to the pad P44 is provided on the ASIC chip 4. The other end of the switch SW41 is connected to a ground potential application end. One end of resistor R2 is connected to pad P41. The other end of resistor R2 is connected to pad P46. One end of resistor R4 is connected to pad P45. A switch SW42 is provided on the ASIC chip 4, and has one end connected to the other end of the resistor R4 and the pad P47. The other end of the switch SW42 is connected to a ground potential application end.
　ＭＥＭＳセンサ３０により圧力を検出する場合には、スイッチＳＷ４１をオン状態、スイッチＳＷ４２をオフ状態とする。温度センサ１により温度を検出する場合は、スイッチＳＷ４１をオフ状態、スイッチＳＷ４２をオン状態とする。 When detecting pressure using the MEMS sensor 30, the switch SW41 is turned on and the switch SW42 is turned off. When the temperature is detected by the temperature sensor 1, the switch SW41 is turned off and the switch SW42 is turned on.
　このように、ともに抵抗値に関して正の温度特性を有する抵抗Ｒ１，Ｒ３をＭＥＭＳチップ３に設け、ともに抵抗値に関して負の温度特性を有する抵抗Ｒ２，Ｒ４をＡＳＩＣチップ４に設けている。抵抗Ｒ１，Ｒ３は、ＭＥＭＳセンサ３０における抵抗Ｒａ～Ｒｄと同じ抵抗、すなわち同じ温度特性を有する抵抗として形成することができる。また、抵抗Ｒ１，Ｒ３と逆の温度特性を有する抵抗Ｒ２，Ｒ４は、ＡＳＩＣチップ４において形成することができる。従って、抵抗Ｒ１～Ｒ４を形成することが容易となる。また、抵抗Ｒ１，Ｒ３をＭＥＭＳチップ３に設けることで、ＭＥＭＳセンサ３０の温度との誤差要因が小さくなる。さらに、パッドおよびワイヤの数を減らすことができる。 In this way, the MEMS chip 3 is provided with resistors R1 and R3, both of which have positive temperature characteristics with respect to resistance value, and the ASIC chip 4 is provided with resistors R2, R4, both of which have negative temperature characteristics with respect to resistance value. Resistors R1 and R3 can be formed as the same resistance as the resistances Ra to Rd in the MEMS sensor 30, that is, as resistances having the same temperature characteristics. Further, resistors R2 and R4 having temperature characteristics opposite to those of resistors R1 and R3 can be formed in the ASIC chip 4. Therefore, it becomes easy to form the resistors R1 to R4. Moreover, by providing the resistors R1 and R3 in the MEMS chip 3, the error factor with respect to the temperature of the MEMS sensor 30 is reduced. Furthermore, the number of pads and wires can be reduced.
　なお、抵抗Ｒ２，Ｒ４をＭＥＭＳチップ３に設け、抵抗Ｒ１，Ｒ３をＡＳＩＣチップ４に設けてもよい。 Note that the resistors R2 and R4 may be provided on the MEMS chip 3, and the resistors R1 and R3 may be provided on the ASIC chip 4.
＜６．抵抗の第４配置例＞
　図８は、抵抗Ｒ１～Ｒ４およびＭＥＭＳ抵抗Ｒａ～Ｒｄの第４配置例を示す図である。図８に示す構成の先述した第３配置例（図７）との相違点について説明すると、抵抗Ｒｂ，Ｒｄに接続される一端を有するスイッチＳＷ３１がＭＥＭＳチップ３に設けられる。スイッチＳＷ３１の他端および抵抗Ｒ３がパッドＰ３４に接続される。パッドＰ３４とワイヤＷｒにより接続されるパッドＰ４４は、スイッチＳＷ４１および抵抗Ｒ４に接続される。抵抗Ｒ１の一端は、パッドＰ３５に接続される。パッドＰ３５とワイヤＷｒにより接続されるパッドＰ４５は、抵抗Ｒ２に接続される。抵抗Ｒ１の他端は、パッドＰ３６に接続される。パッドＰ３６とワイヤＷｒにより接続されるパッドＰ４６は、スイッチＳＷ４２に接続される。 <6. Fourth example of resistor arrangement>
FIG. 8 is a diagram showing a fourth arrangement example of resistors R1 to R4 and MEMS resistors Ra to Rd. To explain the difference between the configuration shown in FIG. 8 and the third arrangement example (FIG. 7) described above, the MEMS chip 3 is provided with a switch SW31 having one end connected to the resistors Rb and Rd. The other end of switch SW31 and resistor R3 are connected to pad P34. Pad P44, which is connected to pad P34 by wire Wr, is connected to switch SW41 and resistor R4. One end of resistor R1 is connected to pad P35. Pad P45, which is connected to pad P35 by wire Wr, is connected to resistor R2. The other end of resistor R1 is connected to pad P36. Pad P46, which is connected to pad P36 by wire Wr, is connected to switch SW42.
　ＭＥＭＳセンサ３０により圧力を検出する場合には、スイッチＳＷ３１，ＳＷ４１をオン状態、スイッチＳＷ４２をオフ状態とする。温度センサ１により温度を検出する場合は、スイッチＳＷ３１，ＳＷ４１をオフ状態、スイッチＳＷ４２をオン状態とする。 When detecting pressure using the MEMS sensor 30, the switches SW31 and SW41 are turned on and the switch SW42 is turned off. When the temperature is detected by the temperature sensor 1, the switches SW31 and SW41 are turned off and the switch SW42 is turned on.
　このように、図７に示す構成と比べて、スイッチＳＷ３１を設けることで、抵抗Ｒｂ，Ｒｄに接続されるパッドと、抵抗Ｒ３に接続されるパッドを共通化し、パッドおよびワイヤの数をより減らすことができる。 In this way, compared to the configuration shown in FIG. 7, by providing the switch SW31, the pads connected to the resistors Rb and Rd and the pad connected to the resistor R3 are made common, and the number of pads and wires is further reduced. be able to.
＜７．その他＞
　以上、例示的な実施形態について説明したが、本発明の趣旨の範囲内において、実施形態は種々に変形が可能である。 <7. Others>
Although exemplary embodiments have been described above, the embodiments can be modified in various ways within the scope of the spirit of the present invention.
＜８．付記＞
　以上の通り、例えば、本開示の一態様に係る温度センサ（１）は、
　電源電圧（Ｖｄｄ）の印加端とグランド電位の印加端との間に直列に接続される第１抵抗（Ｒ１）および第２抵抗（Ｒ２）と、前記電源電圧の印加端と前記グランド電位の印加端との間に直列に接続される第３抵抗（Ｒ３）および第４抵抗（Ｒ４）と、を有する第１抵抗ブリッジ回路（１１）を備え、
　前記第１抵抗は、前記グランド電位側に設けられ、抵抗値に関して正の温度特性を有し、
　前記第２抵抗は、前記電源電圧側に設けられ、抵抗値に関して負の温度特性を有し、
　前記第３抵抗は、前記電源電圧側に設けられ、抵抗値に関して正の温度特性を有し、
　前記第４抵抗は、前記グランド電位側に設けられ、抵抗値に関して負の温度特性を有する構成としている（第１の構成、図１）。 <8. Additional notes＞
As mentioned above, for example, the temperature sensor (1) according to one aspect of the present disclosure is
A first resistor (R1) and a second resistor (R2) connected in series between an end to which a power supply voltage (Vdd) is applied and an end to which a ground potential is applied, and an end to which the power supply voltage is applied and the ground potential is applied. a first resistor bridge circuit (11) having a third resistor (R3) and a fourth resistor (R4) connected in series between the two ends;
The first resistor is provided on the ground potential side and has positive temperature characteristics with respect to resistance value,
The second resistor is provided on the power supply voltage side and has negative temperature characteristics with respect to resistance value,
The third resistor is provided on the power supply voltage side and has positive temperature characteristics with respect to resistance value,
The fourth resistor is provided on the ground potential side and has a configuration having negative temperature characteristics with respect to resistance value (first configuration, FIG. 1).
　また、本開示の一態様に係るセンサ装置（５）は、上記第１の構成の温度センサ（１）と、前記抵抗ブリッジ回路（１１）の後段に設けられるＡＤ変換部（２）と、を備え、
　前記ＡＤ変換部は、
　　前記第１抵抗と前記第２抵抗とが接続される第１ノード（Ｎ１）に接続可能な第１ＡＤコンバータ（２２）と、
　　前記第３抵抗と前記第４抵抗とが接続される第２ノード（Ｎ２）に接続可能な第２ＡＤコンバータ（２４）と、
　を有し、
　前記第１ＡＤコンバータおよび前記第２ＡＤコンバータはそれぞれ、基準電圧（Ｖｒｅｆ）を印加可能な第１入力端を有するアンプ（２２Ａ，２４Ａ）と、前記アンプの第２入力端と前記アンプの出力端との間に接続されるコンデンサ（Ｃ）と、を有し、
　前記第１ＡＤコンバータおよび前記第２ＡＤコンバータはそれぞれ、前記第１ノードの電圧または前記第２ノードの電圧に基づく前記コンデンサの充電、および前記コンデンサの放電を行うことで、ＡＤ変換を実行するように構成される（第２の構成、図２）。 Further, a sensor device (5) according to an aspect of the present disclosure includes a temperature sensor (1) having the first configuration and an AD converter (2) provided at a subsequent stage of the resistor bridge circuit (11). Prepare,
The AD converter includes:
a first AD converter (22) connectable to a first node (N1) to which the first resistor and the second resistor are connected;
a second AD converter (24) connectable to a second node (N2) to which the third resistor and the fourth resistor are connected;
has
The first AD converter and the second AD converter each include an amplifier (22A, 24A) having a first input terminal to which a reference voltage (Vref) can be applied, and a second input terminal of the amplifier and an output terminal of the amplifier. a capacitor (C) connected between;
The first AD converter and the second AD converter are each configured to perform AD conversion by charging the capacitor and discharging the capacitor based on the voltage at the first node or the voltage at the second node. (second configuration, Figure 2).
　また、上記第２の構成において、前記基準電圧（Ｖｒｅｆ）は、前記電源電圧（Ｖｄｄ）に基づく電圧であり、
　前記第１ＡＤコンバータ（２２）においては、グランド電位側へ放電電流（Ｉｏ）が流れることで前記コンデンサの放電が行われ、
　前記第２ＡＤコンバータ（２４）においては、前記電源電圧側から放電電流（Ｉｏ）が流れることで前記コンデンサの放電が行われる構成としてもよい（第３の構成、図２）。 Further, in the second configuration, the reference voltage (Vref) is a voltage based on the power supply voltage (Vdd),
In the first AD converter (22), the capacitor is discharged by a discharge current (Io) flowing toward the ground potential side,
The second AD converter (24) may have a configuration in which the capacitor is discharged by a discharge current (Io) flowing from the power supply voltage side (third configuration, FIG. 2).
　また、上記第２または第３の構成において、前記第１ＡＤコンバータ（２２）における前記アンプ（２２Ａ）の出力と、前記第２ＡＤコンバータ（２４）における前記アンプ（２４Ａ）の出力が入力されるように構成されるコンパレータ（２５）を備える構成としてもよい（第４の構成、図２）。 Further, in the second or third configuration, the output of the amplifier (22A) in the first AD converter (22) and the output of the amplifier (24A) in the second AD converter (24) are input. (4th configuration, FIG. 2).
　また、上記第２から第４のいずれかの構成において、前記電源電圧（Ｖｄｄ）の印加端と前記グランド電位の印加端との間に直列に接続される第１ＭＥＭＳ抵抗（Ｒａ）および第２ＭＥＭＳ抵抗（Ｒｂ）と、前記電源電圧の印加端と前記グランド電位の印加端との間に直列に接続される第３ＭＥＭＳ抵抗（Ｒｃ）および第４ＭＥＭＳ抵抗（Ｒｄ）と、を含む第２抵抗ブリッジ回路（３０１）を有するＭＥＭＳセンサ（３０）を備え、
　前記第１ＭＥＭＳ抵抗と前記第２ＭＥＭＳ抵抗とが接続される第３ノード（Ｎａ）は、前記第１ＡＤコンバータ（２２）に接続可能であり、
　前記第３ＭＥＭＳ抵抗と前記第４ＭＥＭＳ抵抗とが接続される第４ノード（Ｎｂ）は、前記第２ＡＤコンバータ（２４）に接続可能である構成としてもよい（第５の構成、図１）。 Further, in any one of the second to fourth configurations, a first MEMS resistor (Ra) and a second MEMS resistor are connected in series between an end to which the power supply voltage (Vdd) is applied and an end to which the ground potential is applied. (Rb); a third MEMS resistor (Rc) and a fourth MEMS resistor (Rd) connected in series between the power supply voltage application terminal and the ground potential application terminal; 301);
A third node (Na) to which the first MEMS resistor and the second MEMS resistor are connected can be connected to the first AD converter (22),
The fourth node (Nb) to which the third MEMS resistor and the fourth MEMS resistor are connected may be configured to be connectable to the second AD converter (24) (fifth configuration, FIG. 1).
　また、上記第５の構成において、前記第１～第４抵抗（Ｒ１～Ｒ４）および前記第１～第４ＭＥＭＳ抵抗（Ｒａ～Ｒｄ）が設けられる第１チップ（３）を備える構成としてもよい（第６の構成、図５）。 Further, in the fifth configuration, the first chip (3) may be provided with the first to fourth resistors (R1 to R4) and the first to fourth MEMS resistors (Ra to Rd). Sixth configuration, Figure 5).
　また、上記第５の構成において、前記第１～第４ＭＥＭＳ抵抗（Ｒａ～Ｒｄ）が設けられる第１チップ（３）と、前記第１～第４抵抗（Ｒ１～Ｒ４）が設けられる第２チップ（４）と、を備える構成としてもよい（第７の構成、図６）。 Further, in the fifth configuration, a first chip (3) in which the first to fourth MEMS resistors (Ra to Rd) are provided, and a second chip in which the first to fourth resistors (R1 to R4) are provided. (4) (Seventh configuration, FIG. 6).
　また、上記第５の構成において、前記第１～第４ＭＥＭＳ抵抗（Ｒａ～Ｒｄ）が設けられる第１チップ（３）と、第２チップ（４）と、を備え、
　前記第１抵抗（Ｒ１）および前記第３抵抗（Ｒ３）が前記第１チップに設けられ、かつ前記第２抵抗（Ｒ２）および前記第４抵抗（Ｒ４）が前記第２チップに設けられ、あるいは、前記第２抵抗および前記第４抵抗が前記第１チップに設けられ、かつ前記第１抵抗および前記第３抵抗が前記第２チップに設けられる構成としてもよい（第８の構成、図７、図８）。 Further, the fifth configuration includes a first chip (3) on which the first to fourth MEMS resistors (Ra to Rd) are provided, and a second chip (4),
The first resistor (R1) and the third resistor (R3) are provided on the first chip, and the second resistor (R2) and the fourth resistor (R4) are provided on the second chip, or , the second resistor and the fourth resistor may be provided on the first chip, and the first resistor and the third resistor may be provided on the second chip (eighth configuration, FIG. 7, Figure 8).
　また、上記第８の構成において、前記第２ＭＥＭＳ抵抗（Ｒｂ）および前記第４ＭＥＭＳ抵抗（Ｒｄ）と前記グランド電位の印加端との間に接続される第１スイッチ（ＳＷ４１）と、前記第１抵抗（Ｒ１）および前記第４抵抗（Ｒ４）と前記グランド電位の印加端との間に接続される第２スイッチ（ＳＷ４２）と、が前記第２チップ（４）に設けられる構成としてもよい（第９の構成、図７、図８）。 Further, in the eighth configuration, a first switch (SW41) connected between the second MEMS resistor (Rb) and the fourth MEMS resistor (Rd) and the ground potential application terminal, and the first resistor (R1) and a second switch (SW42) connected between the fourth resistor (R4) and the end to which the ground potential is applied may be provided in the second chip (4). 9 configuration, Fig. 7, Fig. 8).
　また、上記第９の構成において、前記第３抵抗（Ｒ３）あるいは前記第２抵抗（Ｒ２）が接続されるパッド（Ｐ３４）と、前記第２ＭＥＭＳ抵抗（Ｒｂ）および前記第４ＭＥＭＳ抵抗（Ｒｄ）と前記パッドとの間に接続される第３スイッチ（ＳＷ３１）と、が前記第１チップ（３）に設けられる構成としてもよい（第１０の構成、図８）。 In the ninth configuration, the pad (P34) to which the third resistor (R3) or the second resistor (R2) is connected, the second MEMS resistor (Rb) and the fourth MEMS resistor (Rd) A third switch (SW31) connected between the pad and the first chip (3) may be provided in the first chip (3) (a tenth configuration, FIG. 8).
　本開示は、例えば、ＭＥＭＳセンサの温度補正に利用することが可能である。 The present disclosure can be used, for example, for temperature correction of MEMS sensors.
　　　１　　　温度センサ
　　　２　　　ＡＤ変換部
　　　３　　　ＭＥＭＳチップ
　　　４　　　ＡＳＩＣチップ
　　　５　　　センサ装置
　　　１０　　　温度センサ
　　　１１　　　抵抗ブリッジ回路
　　　２０　　　ＡＤ変換部
　　　２１　　　第１ボルテージフォロワ
　　　２２　　　第１ＡＤコンバータ
　　　２２Ａ　　アンプ
　　　２３　　　第２ボルテージフォロワ
　　　２４　　　第２ＡＤコンバータ
　　　２４Ａ　　アンプ
　　　２５　　　コンパレータ
　　　３０　　　ＭＥＭＳセンサ
　　　５０　　　センサ装置
　　　１０１　　　定電流源
　　　１０２　　　ダイオード
　　　３０１　　　抵抗ブリッジ回路
　　　Ｃ　　　コンデンサ
　　　Ｐ３１～Ｐ３８　パッド
　　　Ｐ４１～Ｐ４８　パッド
　　　Ｒ１，Ｒ２，Ｒ３，Ｒ４　抵抗
　　　Ｒａ，Ｒｂ，Ｒｃ，Ｒｄ　ＭＥＭＳ抵抗
　　　Ｒｉ　　　入力抵抗
　　　Ｒｏ　　　放電抵抗
　　　ＳＷ１，ＳＷ２，ＳＷ１１，ＳＷ１２　スイッチ
　　　ＳＷ３１　　　スイッチ
　　　ＳＷ４１　　　スイッチ
　　　ＳＷ４２　　　スイッチ
　　　ＳＷｉ　　　入力スイッチ
　　　ＳＷｏ　　　放電スイッチ
　　　Ｗｒ　　　ワイヤ 1 Temperature sensor 2 AD converter 3 MEMS chip 4 ASIC chip 5 Sensor device 10 Temperature sensor 11 Resistance bridge circuit 20 AD converter 21 1st voltage follower 22 1st AD converter 22A amplifier 23 2nd voltage follower 24 2nd AD converter 24A amplifier 25 Comparator 30 MEMS sensor 50 Sensor device 101 Constant current source 102 Diode 301 Resistance bridge circuit C Capacitor P31 to P38 Pad P41 to P48 Pad R1, R2, R3, R4 Resistance Ra, Rb, Rc, Rd MEMS resistance Ri Input resistance Ro Discharge resistance SW1, SW2, SW11, SW12 Switch SW31 Switch SW41 Switch SW42 Switch SWi Input switch SWo Discharge switch Wr Wire

Claims (10)

  1. 　電源電圧の印加端とグランド電位の印加端との間に直列に接続される第１抵抗および第２抵抗と、前記電源電圧の印加端と前記グランド電位の印加端との間に直列に接続される第３抵抗および第４抵抗と、を有する第１抵抗ブリッジ回路を備え、
    　前記第１抵抗は、前記グランド電位側に設けられ、抵抗値に関して正の温度特性を有し、
    　前記第２抵抗は、前記電源電圧側に設けられ、抵抗値に関して負の温度特性を有し、
    　前記第３抵抗は、前記電源電圧側に設けられ、抵抗値に関して正の温度特性を有し、
    　前記第４抵抗は、前記グランド電位側に設けられ、抵抗値に関して負の温度特性を有する、温度センサ。     A first resistor and a second resistor connected in series between the power supply voltage application end and the ground potential application end; and a first resistor and a second resistor connected in series between the power supply voltage application end and the ground potential application end. a first resistor bridge circuit having a third resistor and a fourth resistor;
    The first resistor is provided on the ground potential side and has positive temperature characteristics with respect to resistance value,
    The second resistor is provided on the power supply voltage side and has negative temperature characteristics with respect to resistance value,
    The third resistor is provided on the power supply voltage side and has positive temperature characteristics with respect to resistance value,
    A temperature sensor in which the fourth resistor is provided on the ground potential side and has negative temperature characteristics with respect to resistance value.
  2. 　請求項１に記載の温度センサと、前記抵抗ブリッジ回路の後段に設けられるＡＤ変換部と、を備え、
    　前記ＡＤ変換部は、
    　　前記第１抵抗と前記第２抵抗とが接続される第１ノードに接続可能な第１ＡＤコンバータと、
    　　前記第３抵抗と前記第４抵抗とが接続される第２ノードに接続可能な第２ＡＤコンバータと、
    　を有し、
    　前記第１ＡＤコンバータおよび前記第２ＡＤコンバータはそれぞれ、基準電圧を印加可能な第１入力端を有するアンプと、前記アンプの第２入力端と前記アンプの出力端との間に接続されるコンデンサと、を有し、
    　前記第１ＡＤコンバータおよび前記第２ＡＤコンバータはそれぞれ、前記第１ノードの電圧または前記第２ノードの電圧に基づく前記コンデンサの充電、および前記コンデンサの放電を行うことで、ＡＤ変換を実行するように構成される、センサ装置。     The temperature sensor according to claim 1, and an AD conversion section provided at a subsequent stage of the resistance bridge circuit,
    The AD converter includes:
    a first AD converter connectable to a first node to which the first resistor and the second resistor are connected;
    a second AD converter connectable to a second node to which the third resistor and the fourth resistor are connected;
    has
    The first AD converter and the second AD converter each include an amplifier having a first input terminal to which a reference voltage can be applied, and a capacitor connected between a second input terminal of the amplifier and an output terminal of the amplifier; has
    The first AD converter and the second AD converter are each configured to perform AD conversion by charging the capacitor and discharging the capacitor based on the voltage at the first node or the voltage at the second node. sensor device.
  3. 　前記基準電圧は、前記電源電圧に基づく電圧であり、
    　前記第１ＡＤコンバータにおいては、グランド電位側へ放電電流が流れることで前記コンデンサの放電が行われ、
    　前記第２ＡＤコンバータにおいては、前記電源電圧側から放電電流が流れることで前記コンデンサの放電が行われる、請求項２に記載のセンサ装置。     The reference voltage is a voltage based on the power supply voltage,
    In the first AD converter, the capacitor is discharged by a discharge current flowing toward the ground potential side,
    3. The sensor device according to claim 2, wherein in the second AD converter, the capacitor is discharged by a discharge current flowing from the power supply voltage side.
  4. 　前記第１ＡＤコンバータにおける前記アンプの出力と、前記第２ＡＤコンバータにおける前記アンプの出力が入力されるように構成されるコンパレータを備える、請求項２または請求項３に記載のセンサ装置。 The sensor device according to claim 2 or 3, comprising a comparator configured to receive the output of the amplifier in the first AD converter and the output of the amplifier in the second AD converter.
  5. 　前記電源電圧の印加端と前記グランド電位の印加端との間に直列に接続される第１ＭＥＭＳ抵抗および第２ＭＥＭＳ抵抗と、前記電源電圧の印加端と前記グランド電位の印加端との間に直列に接続される第３ＭＥＭＳ抵抗および第４ＭＥＭＳ抵抗と、を含む第２抵抗ブリッジ回路を有するＭＥＭＳセンサを備え、
    　前記第１ＭＥＭＳ抵抗と前記第２ＭＥＭＳ抵抗とが接続される第３ノードは、前記第１ＡＤコンバータに接続可能であり、
    　前記第３ＭＥＭＳ抵抗と前記第４ＭＥＭＳ抵抗とが接続される第４ノードは、前記第２ＡＤコンバータに接続可能である、請求項２から請求項４のいずれか１項に記載のセンサ装置。     a first MEMS resistor and a second MEMS resistor connected in series between the power supply voltage application end and the ground potential application end; and a first MEMS resistor and a second MEMS resistor connected in series between the power supply voltage application end and the ground potential application end. a MEMS sensor having a second resistor bridge circuit including a third MEMS resistor and a fourth MEMS resistor connected;
    A third node to which the first MEMS resistor and the second MEMS resistor are connected can be connected to the first AD converter,
    The sensor device according to any one of claims 2 to 4, wherein a fourth node to which the third MEMS resistor and the fourth MEMS resistor are connected is connectable to the second AD converter.
  6. 　前記第１～第４抵抗および前記第１～第４ＭＥＭＳ抵抗が設けられる第１チップを備える、請求項５に記載のセンサ装置。 The sensor device according to claim 5, comprising a first chip on which the first to fourth resistors and the first to fourth MEMS resistors are provided.
  7. 　前記第１～第４ＭＥＭＳ抵抗が設けられる第１チップと、前記第１～第４抵抗が設けられる第２チップと、を備える、請求項５に記載のセンサ装置。 The sensor device according to claim 5, comprising a first chip on which the first to fourth MEMS resistors are provided, and a second chip on which the first to fourth resistors are provided.
  8. 　前記第１～第４ＭＥＭＳ抵抗が設けられる第１チップと、第２チップと、を備え、
    　前記第１抵抗および前記第３抵抗が前記第１チップに設けられ、かつ前記第２抵抗および前記第４抵抗が前記第２チップに設けられ、あるいは、前記第２抵抗および前記第４抵抗が前記第１チップに設けられ、かつ前記第１抵抗および前記第３抵抗が前記第２チップに設けられる、請求項５に記載のセンサ装置。     comprising a first chip on which the first to fourth MEMS resistors are provided, and a second chip,
    The first resistor and the third resistor are provided on the first chip, and the second resistor and the fourth resistor are provided on the second chip, or the second resistor and the fourth resistor are provided on the first chip. The sensor device according to claim 5, wherein the sensor device is provided on a first chip, and the first resistor and the third resistor are provided on the second chip.
  9. 　前記第２ＭＥＭＳ抵抗および前記第４ＭＥＭＳ抵抗と前記グランド電位の印加端との間に接続される第１スイッチと、前記第１抵抗および前記第４抵抗と前記グランド電位の印加端との間に接続される第２スイッチと、が前記第２チップに設けられる、請求項８に記載のセンサ装置。 a first switch connected between the second MEMS resistor and the fourth MEMS resistor and the ground potential application terminal; a first switch connected between the first resistor and the fourth resistor and the ground potential application terminal; The sensor device according to claim 8, wherein a second switch is provided on the second chip.
  10. 　前記第３抵抗あるいは前記第２抵抗が接続されるパッドと、前記第２ＭＥＭＳ抵抗および前記第４ＭＥＭＳ抵抗と前記パッドとの間に接続される第３スイッチと、が前記第１チップに設けられる、請求項９に記載のセンサ装置。 The first chip is provided with a pad to which the third resistor or the second resistor is connected, and a third switch connected between the second MEMS resistor, the fourth MEMS resistor, and the pad. The sensor device according to item 9.
PCT/JP2023/009335 2022-03-31 2023-03-10 Temperature sensor and sensor device WO2023189429A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6388733U (en) * 1986-11-29 1988-06-09
JP2003121268A (en) * 2001-10-09 2003-04-23 Fujitsu Ltd Semi-conductor device
JP2006284301A (en) * 2005-03-31 2006-10-19 Mitsubishi Materials Corp Temperature detector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6388733U (en) * 1986-11-29 1988-06-09
JP2003121268A (en) * 2001-10-09 2003-04-23 Fujitsu Ltd Semi-conductor device
JP2006284301A (en) * 2005-03-31 2006-10-19 Mitsubishi Materials Corp Temperature detector

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