WO2023189020A1 - High-frequency circuit and amplification method - Google Patents

Abstract

A high-frequency circuit (1) comprising: a power amplifier (11); a filter (31) that is connected to the power amplifier (11) and that has a pass band including a band A that is capable of simultaneous transmission with a band B; a power source terminal (131) that receives a power source voltage which is supplied to the power amplifier (11); and a filter (33) that is connected between the power source terminal (131) and the power amplifier (11), wherein the filter (33) has an attenuation band including at least a portion of the band B.

Description

High frequency circuit and amplification method

The present invention relates to a high frequency circuit and an amplification method.

In mobile communication devices such as mobile phones, high-frequency front-end modules are becoming more complex, especially as multiband technology progresses. Patent Document 1 discloses a high frequency circuit that can simultaneously transmit signals in multiple bands.

Unexamined Japanese Patent Publication No. 2017-17691

However, with the above-mentioned conventional technology, the quality of the signal may deteriorate when transmitting signals of multiple bands at the same time.

Therefore, the present invention provides a high frequency circuit and an amplification method that can suppress quality deterioration of a transmitted signal when transmitting signals of multiple bands simultaneously.

A high frequency circuit according to one aspect of the present invention includes a first power amplifier, a first filter connected to the first power amplifier and having a pass band including a first band capable of simultaneous transmission with a second band, and a first power amplifier. A first power supply terminal receiving a first power supply voltage supplied to the amplifier, and a second filter connected between the first power supply terminal and the first power amplifier, the second filter receiving a first power supply voltage supplied to the amplifier. and an attenuation band that includes at least a portion of the attenuation band.

A high frequency circuit according to one aspect of the present invention includes a first power amplifier, a first filter connected to the first power amplifier and having a pass band including a first band capable of simultaneous transmission with a second band, and a first power amplifier. a first power supply terminal receiving a first power supply voltage supplied to the amplifier; a second filter connected between the first power supply terminal and the first power amplifier; a second power amplifier; and a second power supply terminal connected to the second power amplifier. a third filter having a passband including the second band; a second power supply terminal receiving the second power supply voltage supplied to the second power amplifier; and a third filter connected between the second power supply terminal and the second power amplifier. a fourth filter, the second filter having an attenuation band including at least a portion of the first band, and the fourth filter having an attenuation band including at least a portion of the second band.

An amplification method according to one aspect of the present invention receives a first power supply voltage via a first power supply line, and uses the received first power supply voltage to generate a transmission signal of a first band that can be transmitted simultaneously with a second band. The second band noise generated by the amplification of the first band transmission signal is attenuated in the first power supply line.

According to the present invention, it is possible to suppress quality deterioration of a transmitted signal during simultaneous transmission of signals of multiple bands.

FIG. 1 is a circuit configuration diagram of a communication device according to the first embodiment. FIG. 2A is a graph showing an example of changes in power supply voltage in APT mode. FIG. 2B is a graph showing an example of changes in power supply voltage in A-ET mode. FIG. 2C is a graph showing an example of the change in power supply voltage in the D-ET mode. FIG. 3A is a graph showing the pass characteristics of the second filter according to the first embodiment. FIG. 3B is a graph showing the pass characteristics of the fourth filter according to the first embodiment. FIG. 4 is a plan view of the high frequency circuit according to the implementation example of the first embodiment. FIG. 5 is a plan view of the high frequency circuit according to the implementation example of the first embodiment. FIG. 6 is a cross-sectional view of the high frequency circuit according to the implementation example of the first embodiment. FIG. 7 is a flowchart showing an amplification method using the high frequency circuit according to the first embodiment. FIG. 8 is a circuit configuration diagram of a communication device according to the second embodiment. FIG. 9A is a graph showing the pass characteristics of the second filter according to the second embodiment. FIG. 9B is a graph showing the pass characteristics of the fourth filter according to the second embodiment. FIG. 10 is a plan view of a high frequency circuit according to a mounting example of the second embodiment. FIG. 11 is a plan view of a high frequency circuit according to a mounting example of the second embodiment. FIG. 12 is a cross-sectional view of a high frequency circuit according to a mounting example of the second embodiment. FIG. 13A is a graph showing the pass characteristics of the second filter according to a modification of the second embodiment. FIG. 13B is a graph showing the pass characteristics of the fourth filter according to a modification of the second embodiment.

Hereinafter, embodiments of the present invention will be described in detail using the drawings. Note that the embodiments described below are all inclusive or specific examples. Numerical values, shapes, materials, components, arrangement of components, connection forms, etc. shown in the following embodiments are merely examples, and do not limit the present invention.

Note that each figure is a schematic diagram with emphasis, omission, or ratio adjustment as appropriate to illustrate the present invention, and is not necessarily strictly illustrated, and the actual shape, positional relationship, and ratio may differ. It may be different. In each figure, substantially the same configurations are denoted by the same reference numerals, and overlapping explanations may be omitted or simplified.

In each of the following figures, the x-axis and the y-axis are axes that are orthogonal to each other on a plane parallel to the main surface of the module board. Specifically, when the module board has a rectangular shape in plan view, the x-axis is parallel to the first side of the module board, and the y-axis is parallel to the second side orthogonal to the first side of the module board. It is. Further, the z-axis is an axis perpendicular to the main surface of the module substrate, and its positive direction indicates an upward direction, and its negative direction indicates a downward direction.

In the circuit configuration of the present invention, "connected" includes not only the case of direct connection with a connection terminal and/or wiring conductor, but also the case of electrical connection through other circuit elements. "Connected between A and B" means connected to both A and B between A and B, and in addition to being connected in series to the path connecting A and B. This includes being connected in parallel (shunt connection) between the path and ground.

In the component placement of the present invention, "the component is placed on the board" includes placing the component on the main surface of the board and placing the component within the board. "The component is placed on the main surface of the board" means that the part is placed in contact with the main surface of the board, and also that the part is placed above the main surface without contacting the main surface. (e.g., the part is stacked on top of another part placed in contact with the major surface). Furthermore, "the component is placed on the main surface of the substrate" may include that the component is placed in a recess formed in the main surface. "A component is placed within a board" means that, in addition to being encapsulated within a module board, all of the part is located between the two main surfaces of the board, but only a portion of the part is encapsulated within the module board. This includes not being covered by the board and only part of the component being placed within the board.

Furthermore, in the component arrangement of the present invention, "planar view of the module board" means viewing an object orthographically projected onto the xy plane from the positive side of the z-axis. "A overlaps B in plan view" means that the area of A orthogonally projected onto the xy plane overlaps the area of B orthogonally projected onto the xy plane. Furthermore, "A is placed between B and C" means that at least one of the multiple line segments connecting any point in B and any point in C passes through A. do.

In the present invention, the passband of a filter is a portion of the frequency spectrum transmitted by the filter, and is defined as a frequency band in which the output power is not attenuated by 3 dB or more below the maximum output power. On the other hand, the attenuation band of a filter is defined as a frequency band in which the output power is attenuated by 15 dB or more relative to the maximum output power.

In addition, in the present invention, terms indicating relationships between elements such as "parallel" and "perpendicular", terms indicating the shape of elements such as "rectangle", and numerical ranges express only strict meanings. However, it does not mean that the error is within a substantially equivalent range, for example, it includes an error of several percent.

(Embodiment 1)
The communication device 6 according to the first embodiment will be described below with reference to the drawings.

[1.1 Circuit configuration of communication device 6]
First, the circuit configuration of the communication device 6 will be explained with reference to FIG. FIG. 1 is a circuit configuration diagram of a communication device 6 according to this embodiment. The communication device 6 includes a high frequency circuit 1, antennas 2a and 2b, an RFIC (Radio Frequency Integrated Circuit) 3, a BBIC (Baseband Integrated Circuit) 4, and a voltage supply circuit 5.

The high frequency circuit 1 transmits high frequency signals between the antennas 2a and 2b and the RFIC 3. The internal configuration of the high frequency circuit 1 will be described later.

The antennas 2a and 2b are connected to antenna connection terminals 101 and 102 of the high frequency circuit 1, respectively, and transmit high frequency signals output from the high frequency circuit 1. Further, the antennas 2a and 2b receive high frequency signals from the outside and output them to the high frequency circuit 1.

The RFIC 3 is an example of a signal processing circuit that processes high frequency signals. Specifically, the RFIC 3 performs signal processing on the high frequency received signal input via the reception path of the high frequency circuit 1 by down-converting or the like, and outputs the received signal generated by the signal processing to the BBIC 4 . Further, the RFIC 3 processes the transmission signal input from the BBIC 4 by up-converting or the like, and outputs the high-frequency transmission signal generated by the signal processing to the transmission path of the high-frequency circuit 1. Further, the RFIC 3 has a control section that controls the high frequency circuit 1. Note that part or all of the function of the control unit of the RFIC 3 may be implemented outside the RFIC 3, for example, in the BBIC 4 or the high frequency circuit 1.

The BBIC 4 is a baseband signal processing circuit that processes signals using an intermediate frequency band lower in frequency than the high frequency signal transmitted by the high frequency circuit 1. As the signal processed by the BBIC 4, for example, an image signal for displaying an image and/or an audio signal for talking through a speaker is used.

The voltage supply circuit 5 can supply a power supply voltage to the high frequency circuit 1. For example, the voltage supply circuit 5 may supply a modulated power supply voltage to improve power efficiency. At this time, the modulation of the power supply voltage may be limited to a plurality of discrete levels. Methods of supplying such a modulated power supply voltage having a plurality of discrete levels include, for example, average power tracking (APT) mode, symbol power tracking (SPT) mode, analog Envelope tracking (A-ET: Analog Envelope Tracking) mode, digital envelope tracking (D-ET: Digital Envelope Tracking) mode, etc. can be used, but are not limited thereto. Various tracking modes will be described later using FIGS. 2A to 2C. Note that the power supply voltage supplied from the voltage supply circuit 5 is not particularly limited. For example, the voltage supply circuit 5 may supply a fixed power supply voltage or may supply a continuously changing power supply voltage.

Note that the circuit configuration of the communication device 6 shown in FIG. 1 is an example and is not limited thereto. For example, the communication device 6 may not include the antenna 2a, the antenna 2b, the BBIC 4, or any combination thereof. For example, the communication device 6 may include three or more antennas.

[1.2 Specific example of tracking mode]
Here, a tracking mode applicable to the power supply voltage supplied from the voltage supply circuit 5 will be described with reference to FIGS. 2A to 2C.

FIG. 2A is a graph showing an example of the change in power supply voltage in APT mode. In the APT mode, the power supply voltage is varied to a plurality of discrete voltage levels in units of one frame. As a result, the power supply voltage signal forms a square wave. In APT mode, the voltage level of the power supply voltage is determined based on the average output power. Note that in the APT mode, the voltage level may change in units smaller than one frame (for example, subframes, slots, or symbols). APT in which the voltage level changes on a symbol-by-symbol basis is sometimes called SPT.

A frame means a unit that constitutes a high frequency signal (modulated wave). For example, in 5GNR and LTE, a frame includes 10 subframes, each subframe includes multiple slots, and each slot consists of multiple symbols. The subframe length is 1ms and the frame length is 10ms.

FIG. 2B is a graph showing an example of the change in power supply voltage in A-ET mode. In A-ET mode, the envelope of the modulated wave is tracked by continuously varying the power supply voltage. In A-ET mode, the power supply voltage is determined based on the envelope signal.

The envelope signal is a signal indicating the envelope of a modulated wave. The envelope value is expressed, for example, as the square root of (I ² +Q ² ). Here, (I, Q) represents a constellation point. A constellation point is a point on a constellation diagram that represents a signal modulated by digital modulation. (I, Q) is determined by the BBIC 4 based on transmission information, for example.

FIG. 2C is a graph showing an example of the change in power supply voltage in the D-ET mode. In the D-ET mode, the envelope of the modulated wave is tracked by varying the power supply voltage to a plurality of discrete voltage levels within one frame. As a result, the power supply voltage signal forms a square wave. In the D-ET mode, the power supply voltage level is selected or set from among a plurality of discrete voltage levels based on the envelope signal.

In the D-ET mode, for example, a plurality of discrete levels of power supply voltage are prepared in advance, and one level is selected and output from the plurality of prepared levels using a switch (not shown). Ru. Thereby, the level of the power supply voltage supplied to the power amplifiers 11 and 12 can be changed at high speed using the switch. By using multiple switches, it is also possible to supply different levels of power supply voltage to multiple power amplifiers. Note that the method of modulating the power supply voltage in the D-ET mode is not limited to this method. For example, multiple discrete voltage levels may be generated and output at any time. Also, in SPT and/or APT, the power supply voltage may be modulated in the same manner as in the D-ET mode.

[1.3 Circuit configuration of high frequency circuit 1]
Next, the circuit configuration of the high frequency circuit 1 will be explained with reference to FIG. 1. The high frequency circuit 1 includes power amplifiers 11 and 12, low noise amplifiers 21 and 22, filters 31 to 34, capacitors 41 and 42, switches 51 to 53, a PA control circuit 61, and antenna connection terminals 101 and 102. , high frequency input terminals 111 and 112, high frequency output terminals 121 and 122, a power supply terminal 131, and a control terminal 141. Below, the components of the high frequency circuit 1 will be explained in order.

The antenna connection terminals 101 and 102 are both connected to the switch 51 within the high frequency circuit 1, and are connected to the antennas 2a and 2b, respectively, outside the high frequency circuit 1. Band A and B transmission signals amplified by power amplifiers 11 and 12 are output to antennas 2a and 2b via antenna connection terminals 101 and 102, respectively. Furthermore, the reception signals of bands A and B received by the antennas 2a and 2b are input to the high frequency circuit 1 via the antenna connection terminals 101 and 102.

The high frequency input terminal 111 is a terminal for receiving a band A transmission signal from outside the high frequency circuit 1. The high frequency input terminal 111 is connected to the RFIC 3 outside the high frequency circuit 1 and connected to the input terminal of the power amplifier 11 inside the high frequency circuit 1. Thereby, the band A transmission signal received from the RFIC 3 via the high frequency input terminal 111 is supplied to the power amplifier 11.

The high frequency input terminal 112 is a terminal for receiving a band B transmission signal from outside the high frequency circuit 1. The high frequency input terminal 112 is connected to the RFIC 3 outside the high frequency circuit 1 and connected to the input terminal of the power amplifier 12 inside the high frequency circuit 1. Thereby, the band B transmission signal received from the RFIC 3 via the high frequency input terminal 112 is supplied to the power amplifier 12.

The high frequency output terminal 121 is a terminal for supplying a band A received signal to the outside of the high frequency circuit 1. The high frequency output terminal 121 is connected to the RFIC 3 outside the high frequency circuit 1 and connected to the output terminal of the low noise amplifier 21 inside the high frequency circuit 1. Thereby, the band A reception signal amplified by the low noise amplifier 21 is supplied to the RFIC 3 via the high frequency output terminal 121.

The high frequency output terminal 122 is a terminal for supplying a band B received signal to the outside of the high frequency circuit 1. The high frequency output terminal 122 is connected to the RFIC 3 outside the high frequency circuit 1 and connected to the output terminal of the low noise amplifier 22 inside the high frequency circuit 1. Thereby, the band B received signal amplified by the low noise amplifier 22 is supplied to the RFIC 3 via the high frequency output terminal 122.

The power terminal 131 is an example of a first power terminal and an example of a second power terminal. That is, in this embodiment, the first power supply terminal that receives the power supply voltage supplied to the power amplifier 11 and the second power supply terminal that receives the power supply voltage supplied to the power amplifier 12 are the same power supply terminal. The power supply terminal 131 is connected to the voltage supply circuit 5 outside the high frequency circuit 1 and connected to the power amplifiers 11 and 12 inside the high frequency circuit 1. Thereby, the power supply voltage received from the voltage supply circuit 5 via the power supply terminal 131 is supplied to the power amplifiers 11 and 12.

The control terminal 141 is a terminal for transmitting a control signal. That is, the control terminal 141 is a terminal for receiving a control signal from outside the high frequency circuit 1 and/or a terminal for supplying a control signal to the outside of the high frequency circuit 1.

The power amplifiers 11 and 12 are active circuits that obtain output signals with greater energy than the input signal (transmission signal) based on the power (power supply voltage) supplied from the power supply. Each of power amplifiers 11 and 12 includes an amplification transistor and may further include an inductor and/or a capacitor. The internal configurations of power amplifiers 11 and 12 are not particularly limited. For example, each of the power amplifiers 11 and 12 may be a multistage amplifier, a differential amplifier, or a Doherty amplifier.

The power amplifier 11 is an example of a first power amplifier, and is connected between the high frequency input terminal 111 and the filter 31. Specifically, the input terminal of the power amplifier 11 is connected to the high frequency input terminal 111, and the output terminal of the power amplifier 11 is connected to the filter 31 via the switch 52. Further, the power amplifier 11 is connected to a power supply terminal 131 via a power supply line P1 (first power supply line). Thereby, the power amplifier 11 can amplify the band A transmission signal received via the high frequency input terminal 111 using the power supply voltage (first power supply voltage) received via the power supply terminal 131.

The power amplifier 12 is an example of a second power amplifier, and is connected between the high frequency input terminal 112 and the filter 32. Specifically, the input terminal of the power amplifier 12 is connected to the high frequency input terminal 112, and the output terminal of the power amplifier 12 is connected to the filter 32 via the switch 53. Further, the power amplifier 12 is connected to a power supply terminal 131 via a power supply line P2 (second power supply line). Thereby, the power amplifier 12 can amplify the band B transmission signal received via the high frequency input terminal 112 using the power supply voltage (second power supply voltage) received via the power supply terminal 131.

The low noise amplifiers 21 and 22 are active circuits that obtain output signals with greater energy than the input signal (received signal) based on the power supplied from the power supply. Each of low noise amplifiers 21 and 22 includes an amplification transistor and may further include an inductor and/or a capacitor. The internal configurations of the low noise amplifiers 21 and 22 are not particularly limited.

The low noise amplifier 21 is connected between the filter 31 and the high frequency output terminal 121. Specifically, the input terminal of the low noise amplifier 21 is connected to the filter 31 via the switch 52, and the output terminal of the low noise amplifier 21 is connected to the high frequency output terminal 121. Thereby, the low noise amplifier 21 can amplify the band A reception signal received via the filter 31 and supply it to the RFIC 3.

The low noise amplifier 22 is connected between the filter 32 and the high frequency output terminal 122. Specifically, the input terminal of the low noise amplifier 22 is connected to the filter 32 via the switch 53, and the output terminal of the low noise amplifier 22 is connected to the high frequency output terminal 122. Thereby, the low noise amplifier 22 can amplify the band B reception signal received via the filter 32 and supply it to the RFIC 3.

The filter 31 (A-TRx) is an example of a first filter, has a passband including band A, and is connected to the power amplifier 11. Specifically, one end of the filter 31 is selectively connected to the power amplifier 11 and the low noise amplifier 21 via the switch 52. On the other hand, the other end of the filter 31 is selectively connected to antenna connection terminals 101 and 102 via a switch 51. Thereby, the filter 31 can pass the transmission signal of band A among the transmission signals amplified by the power amplifier 11, and can pass the reception signal of band A among the reception signals received by the antenna 2a or 2b. can be passed.

The filter 32 (B-TRx) is an example of a third filter, has a passband including band B, and is connected to the power amplifier 12. Specifically, one end of the filter 32 is selectively connected to the power amplifier 12 and the low noise amplifier 22 via the switch 53. On the other hand, the other end of the filter 32 is selectively connected to antenna connection terminals 101 and 102 via a switch 51. Thereby, the filter 32 can pass the band B transmission signal among the transmission signals amplified by the power amplifier 12, and can pass the band B reception signal among the reception signals received by the antenna 2a or 2b. can be passed.

The filter 33 is an example of a second filter, and is connected between the power supply terminal 131 and the power amplifier 11. Filter 33 has an attenuation band that includes at least a portion of Band A and at least a portion of Band B. Thereby, the filter 33 suppresses band B noise generated in the power amplifier 11 from entering the power amplifier 12 via the power line, and suppresses band A noise generated in the power amplifier 12 from entering the power amplifier 12 via the power line. It is possible to suppress the intrusion into the power amplifier 11.

In this embodiment, the filter 33 is a low-pass filter, and is composed of, for example, an inductor and a capacitor. At this time, the input impedance of the filter 33 is lower than the input impedance of the filter 31. Therefore, the filter 33 has a filter design suitable for low input impedance.

The filter 34 is an example of a fourth filter, and is connected between the power supply terminal 131 and the power amplifier 12. Filter 34 has an attenuation band that includes at least a portion of Band A and at least a portion of Band B. Thereby, the filter 34 suppresses band A noise generated in the power amplifier 12 from entering the power amplifier 11 via the power line, and suppresses band B noise generated in the power amplifier 11 from entering the power amplifier 11 via the power line. It is possible to suppress the interference from entering the power amplifier 12.

In this embodiment, the filter 34 is a low-pass filter, and is composed of, for example, an inductor and a capacitor. At this time, the input impedance of the filter 34 is lower than the input impedance of the filter 32. Therefore, the filter 34 has a filter design suitable for low input impedance.

The capacitor 41 is an example of a first capacitor, and is connected between the path between the filter 33 and the power amplifier 11 and the ground. Capacitor 41 is sometimes called a bypass capacitor or a decoupling capacitor.

The capacitor 42 is an example of a second capacitor, and is connected between the path between the filter 34 and the power amplifier 12 and the ground. Capacitor 42 is sometimes called a bypass capacitor or a decoupling capacitor.

The switch 51 is connected between the antenna connection terminals 101 and 102 and the filters 31 and 32. Specifically, the switch 51 has a terminal 511 connected to the antenna connection terminal 101, a terminal 512 connected to the antenna connection terminal 102, a terminal 513 connected to the filter 31, and a terminal connected to the filter 32. 514.

In this connection configuration, the switch 51 can connect the terminal 511 to one of the terminals 513 and 514, and connect the terminal 512 to the other of the terminals 513 and 514, based on a control signal from the RFIC 3, for example. . That is, the switch 51 can switch the connection of the filter 31 between the antenna connection terminals 101 and 102, and can switch the connection of the filter 32 between the antenna connection terminals 101 and 102. The switch 51 is composed of, for example, a DPDT (Double-Pole Double-Throw) type switch circuit.

The switch 52 is connected between the filter 31 and the power amplifier 11 and low noise amplifier 21. Specifically, the switch 52 has a terminal 521 connected to the filter 31, a terminal 522 connected to the power amplifier 11, and a terminal 523 connected to the low noise amplifier 21.

In this connection configuration, the switch 52 can exclusively connect the terminal 521 to the terminals 522 and 523 based on a control signal from the RFIC 3, for example. That is, the switch 52 can switch the connection of the filter 31 between the power amplifier 11 and the low noise amplifier 21. The switch 52 is composed of, for example, an SPDT (Single-Pole Double-Throw) type switch circuit.

The switch 53 is connected between the filter 32 and the power amplifier 12 and low noise amplifier 22. Specifically, the switch 53 has a terminal 531 connected to the filter 32, a terminal 532 connected to the power amplifier 12, and a terminal 533 connected to the low noise amplifier 22.

In this connection configuration, the switch 53 can exclusively connect the terminal 531 to the terminals 532 and 533 based on a control signal from the RFIC 3, for example. That is, the switch 53 can switch the connection of the filter 32 between the power amplifier 12 and the low noise amplifier 22. The switch 53 is composed of, for example, an SPDT type switch circuit.

The PA control circuit 61 can control the power amplifiers 11 and 12. For example, the PA control circuit 61 can control the bias current supplied to each of the power amplifiers 11 and 12 based on a digital control signal received from the RFIC 3 via the control terminal 141.

Note that bands A and B are examples of the first band and the second band, respectively, and both are frequency bands for communication systems constructed using radio access technology (RAT), and are used for simultaneous transmission. possible frequency bands. Bands A and B that can be simultaneously transmitted are defined in advance by standardization organizations (for example, 3GPP (registered trademark) (3rd Generation Partnership Project), IEEE (Institute of Electrical and Electronics Engineers), etc.). Examples of communication systems include a 5GNR (5th Generation New Radio) system, an LTE (Long Term Evolution) system, and a WLAN (Wireless Local Area Network) system.

Furthermore, in this embodiment, both bands A and B are time division duplex (TDD) bands. As bands A and B, two different adjacent frequency bands are used, for example n77 and n79 for 5GNR. Two adjacent frequency bands mean two frequency bands defined by a standardization organization or the like so that no other frequency band is included between the two frequency bands. Alternatively, two adjacent frequency bands are two frequency bands where the influence of side lobes is large between the two frequency bands, in other words, two frequencies for which exceptions to cross-band isolation are defined in standards etc. means band. Note that bands A and B are not limited to the TDD band, nor are they limited to two adjacent bands. For example, as bands A and B, two non-adjacent TDD bands may be used, or two frequency division duplex (FDD) bands may be used. Further, as bands A and B, a combination of a TDD band and an FDD band may be used.

Note that the high frequency circuit 1 shown in FIG. 1 is an example, and the present invention is not limited thereto. For example, the high frequency circuit 1 may not include a receiving path. Furthermore, for example, the high frequency circuit 1 may include a filter, a power amplifier, and a low noise amplifier corresponding to band C different from bands A and B. Further, the high frequency circuit 1 may not include some or all of the circuit elements for band B. That is, the high frequency circuit 1 only needs to include at least the power amplifier 11, the filters 31 and 33, and the power supply terminal 131.

[1.4 Passage characteristics of filters 33 and 34]
Next, the pass characteristics of the filters 33 and 34 will be explained with reference to FIGS. 3A and 3B. FIG. 3A is a graph showing the pass characteristics of the filter 33 according to this embodiment. FIG. 3B is a graph showing the pass characteristics of the filter 34 according to this embodiment. In FIGS. 3A and 3B, the horizontal axis represents frequency, and the vertical axis represents gain.

The filter 33 is a low-pass filter and has an attenuation band including bands A and B as shown in FIG. 3A. The lower limit frequency f33L of the attenuation band of the filter 33 is lower than the lower limit frequency of band A and lower than the lower limit frequency of band B. Note that the attenuation band of the filter 33 may include only a part of band A, or may not include band A. That is, the lower limit frequency f33L of the attenuation band of the filter 33 may be higher than the lower limit frequency of band A, and may be higher than the upper limit frequency of band A. Further, the attenuation band of the filter 33 may include only part of the band B. That is, the lower limit frequency f33L of the attenuation band of the filter 33 may be higher than the lower limit frequency of band B.

The filter 34 is a low-pass filter and has an attenuation band including bands A and B as shown in FIG. 3B. The lower limit frequency f34L of the attenuation band of the filter 34 is lower than the lower limit frequency of band A and lower than the lower limit frequency of band B. Note that the attenuation band of the filter 34 may include only a part of band A, or may not include band A. That is, the lower limit frequency f34L of the attenuation band of the filter 34 may be higher than the lower limit frequency of band A, and may be higher than the upper limit frequency of band A. Further, the attenuation band of the filter 34 may include only part of the band B. That is, the lower limit frequency f34L of the attenuation band of the filter 34 may be higher than the lower limit frequency of band B.

[1.5 Implementation example of high frequency circuit 1]
Next, implementation examples of the high frequency circuit 1 will be described with reference to FIGS. 4 to 6. FIG. 4 is a plan view of the high frequency circuit 1 according to the implementation example of this embodiment. FIG. 5 is a plan view of the high frequency circuit 1 according to the mounting example of the present embodiment, and is a transparent view of the main surface 90b side of the module board 90 from the positive side of the z-axis. FIG. 6 is a cross-sectional view of the high frequency circuit 1 according to the implementation example of this embodiment. The cross section of the high frequency circuit 1 in FIG. 6 is the cross section taken along the vi-vi line in FIGS. 4 and 5.

In FIGS. 4 to 6, illustrations of wiring connecting each of the plurality of components arranged on the module board 90 are omitted except for some parts. In FIG. 4, illustration of the resin member 91 and the metal electrode layer 93 that cover the main surface 90a of the module board 90 is omitted. In addition, in Figures 4 to 6, each circuit component may be given an abbreviation (such as "PA") that indicates its function so that the arrangement relationship of each circuit component can be easily understood, but the actual The abbreviation does not need to be given to each circuit component.

In addition to the circuit components in which the circuit elements shown in FIG. .

The module board 90 has main surfaces 90a and 90b facing each other. Module board 90 includes a wiring layer, a ground layer, and a via conductor therein. As the module substrate 90, for example, a low temperature co-fired ceramics (LTCC) substrate or a high temperature co-fired ceramics (HTCC) substrate having a laminated structure of a plurality of dielectric layers, A component-embedded board, a board having a redistribution layer (RDL), a printed circuit board, or the like can be used, but the present invention is not limited to these.

The power amplifiers 11 and 12 (PA) are arranged on the main surface 90a as shown in FIG. 4. Each of power amplifiers 11 and 12 may be constructed of, for example, at least one of gallium arsenide (GaAs), silicon germanium (SiGe), and gallium nitride (GaN). Note that a portion of the power amplifiers 11 and 12 may be configured using CMOS (Complementary Metal Oxide Semiconductor), and specifically may be manufactured using an SOI (Silicon on Insulator) process.

The integrated circuit 20 including the low noise amplifiers 21 and 22 (LNA) is arranged on the main surface 90a as shown in FIG. 4. The integrated circuit 20 is configured using, for example, CMOS, and specifically manufactured by an SOI process. Note that the integrated circuit 20 is not limited to CMOS.

The filters 31 and 32 (BPF) are arranged on the main surface 90a as shown in FIG. Each of the filters 31 and 32 may be configured using any of a surface acoustic wave (SAW) filter, a bulk acoustic wave (BAW) filter, an LC resonance filter, and a dielectric filter. In addition, it is not limited to these.

The filters 33 and 34 (LPF) are arranged on the main surface 90a as shown in FIG. 4. Each of the filters 33 and 34 may be configured using any of a SAW filter, a BAW filter, an LC filter, and a dielectric filter, and is not limited to these.

The capacitors 41 and 42 (C) are arranged on the main surface 90a as shown in FIG. 4. Specifically, capacitor 41 is placed near filter 33 and near power amplifier 11 . Thereby, the wiring length of the power supply line P1 can be shortened, and resistance loss due to the wiring can be reduced. Further, the capacitor 42 is arranged near the filter 34 and also near the power amplifier 12. Thereby, the wiring length of the power supply line P2 can be shortened, and resistance loss due to the wiring can be reduced.

The capacitors 41 and 42 are mounted as chip capacitors. A chip capacitor is a surface mount device (SMD) that includes a capacitor. Note that the capacitors 41 and 42 are not limited to chip capacitors.

The integrated circuit 50 including the switches 51 to 53 (SW) is arranged on the main surface 90a as shown in FIG. The integrated circuit 50 includes, for example, a plurality of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) connected in series. The number of MOSFETs connected in series may be determined depending on the required withstand voltage and is not particularly limited.

The PA control circuit 61 (PAC) is arranged on the main surface 90a as shown in FIG. Specifically, PA control circuit 61 is placed between power amplifiers 11 and 12. The PA control circuit 61 is configured using, for example, CMOS, and specifically manufactured by an SOI process. Note that the PA control circuit 61 is not limited to CMOS.

The plurality of land electrodes 150 are arranged on the main surface 90b as shown in FIG. The plurality of land electrodes 150 include a ground terminal in addition to the antenna connection terminals 101 and 102, high frequency input terminals 111 and 112, high frequency output terminals 121 and 122, power supply terminal 131, and control terminal 141 shown in FIG. Functions as an external connection terminal. Each of the plurality of land electrodes 150 is connected to an input/output terminal and/or a ground terminal on a motherboard arranged in the negative direction of the z-axis of the high frequency circuit 1. Copper electrodes can be used as the plurality of land electrodes 150, but are not limited thereto. For example, solder electrodes may be used as the plurality of land electrodes 150. Further, instead of the plurality of land electrodes 150, a plurality of bump electrodes may be used.

At least a portion of the land electrode 150 functioning as the power supply terminal 131 overlaps with at least a portion of the filter 33 when the module substrate 90 is viewed from above. Thereby, as shown in FIG. 6, the wiring length of the power supply line P1 can be shortened, and the resistance loss due to the wiring can be reduced.

The resin member 91 covers the main surface 90a and the circuit components on the main surface 90a, as shown in FIG. As a material for the resin member 91, for example, epoxy resin can be used. Note that the material of the resin member 91 is not limited to epoxy resin. The resin member 91 has a function of ensuring reliability such as mechanical strength and moisture resistance of the circuit components on the main surface 90a. Note that the resin member 91 does not necessarily have to be included in the high frequency circuit 1.

The metal electrode layer 93 is a metal thin film formed by, for example, a sputtering method. The metal electrode layer 93 is formed to cover the surface (upper surface and side surfaces) of the resin member 91, as shown in FIG. Metal electrode layer 93 is connected to ground and functions as a shield electrode. That is, the metal electrode layer 93 suppresses external noise from entering the high-frequency circuit 1 and suppresses noise generated in the high-frequency circuit 1 from interfering with other modules or other equipment. Note that the metal electrode layer 93 does not need to be included in the high frequency circuit 1.

Note that the implementation of the high frequency circuit 1 in FIGS. 4 to 6 is an example, and the implementation is not limited thereto. For example, some circuit components may be placed on the main surface 90b of the module board 90 or may be placed within the module board 90.

[1.6 Amplification method in high frequency circuit 1]
An amplification method in the high frequency circuit 1 configured as above will be explained with reference to FIG. FIG. 7 is a flowchart showing an amplification method by the high frequency circuit 1 according to the present embodiment.

First, the power amplifier 11 receives a power supply voltage (first power supply voltage) via the power supply line P1 (first power supply line) (S101). The power amplifier 11 amplifies the band A transmission signal using the received power supply voltage (S102). The filter 33 attenuates band B noise generated by the amplification of the band A transmission signal in the power supply line P1 (S103).

Furthermore, the power amplifier 12 receives the power supply voltage (second power supply voltage) via the power supply line P2 (second power supply line) (S104). The power amplifier 12 amplifies the transmission signal of band B using the received power supply voltage (S105). The filter 34 attenuates band A noise generated by the amplification of the band B transmission signal in the power supply line P2 (S106).

Note that in FIG. 7, steps S104 to S106 are executed after steps S101 to S103, but the amplification method according to the present invention is not limited to this. For example, steps S104 to S106 may be executed before steps S101 to S103, or may be executed in parallel with steps S101 to S103. Further, steps S104 to S106 may not be executed.

[1.7 Effects etc.]
As described above, the high frequency circuit 1 according to the present embodiment includes the power amplifier 11, the filter 31 that is connected to the power amplifier 11 and has a pass band including band A that can transmit simultaneously with band B, and the power amplifier 11. a power supply terminal 131 receiving a power supply voltage supplied to the power amplifier 11; and a filter 33 connected between the power supply terminal 131 and the power amplifier 11, the filter 33 having an attenuation band including at least a part of band B. .

According to this, at least part of the band B is included in the attenuation band of the filter 33 connected between the power supply terminal 131 and the power amplifier 11. Therefore, it is possible to suppress band B noise generated when the power amplifier 11 amplifies the band A transmission signal from entering the power amplifier 12 via the power lines P1 and P2. In other words, it is possible to suppress quality deterioration of the transmission signal of band B in simultaneous transmission of bands A and B.

For example, in the high frequency circuit 1 according to the present embodiment, the attenuation band of the filter 33 may further include at least a portion of the band A.

According to this, at least a portion of the band A is included in the attenuation band of the filter 33 connected between the power supply terminal 131 and the power amplifier 11. Therefore, it is possible to suppress band A noise generated when the power amplifier 12 amplifies the band B transmission signal from entering the power amplifier 11 via the power lines P1 and P2. In other words, it is possible to suppress quality deterioration of the transmission signal of band A in simultaneous transmission of bands A and B.

For example, the high frequency circuit 1 according to the present embodiment may further include a capacitor 41 connected between the path between the filter 33 and the power amplifier 11 and the ground.

According to this, the capacitor 41 is connected between the path between the filter 33 and the power amplifier 11 and the ground. Therefore, the influence of the filter 33 on the impedance of the power amplifier 11 can be reduced, making it easier to design the filter 33, and suppressing deterioration of the characteristics of the power amplifier 11 due to the filter 33.

Furthermore, for example, the high frequency circuit 1 according to the present embodiment may further include a module board 90 on which the power amplifier 11 and filters 31 and 33 are mounted, and includes a power supply terminal 131.

According to this, the filter 33 can be mounted on the same module board 90 as the power amplifier 11 and the filter 31, the wiring length between the filter 33 and the power amplifier 11 can be shortened, and the communication device 6 can be made smaller. You can also contribute to the

For example, in the high frequency circuit 1 according to the present embodiment, the input impedance of the filter 33 may be lower than the input impedance of the filter 31.

According to this, the filter 33 can be configured to have a lower input impedance than the filter 31 on the high frequency signal line, and deterioration of the characteristics of the power amplifier 11 due to the filter 33 can be suppressed.

For example, in the high frequency circuit 1 according to the present embodiment, the filter 33 may be a low-pass filter.

According to this, the design of the filter 33 can be made easier, and harmonics of bands A and/or B can also be attenuated.

For example, the high frequency circuit 1 according to the present embodiment includes a power amplifier 12, a filter 32 connected to the power amplifier 12 and having a passband including band B, and a power supply that receives a power supply voltage supplied to the power amplifier 12. The filter 34 may include a terminal 131 and a filter 34 connected between the power supply terminal 131 and the power amplifier 12, and the filter 34 may include at least one of at least a portion of band A and at least a portion of band B. It may have an attenuation band including.

According to this, the attenuation band of the filter 34 connected between the power supply terminal 131 and the power amplifier 12 includes at least one of at least a portion of the band A and at least a portion of the band B. Therefore, it is possible to suppress band A noise from entering the power amplifier 11 via the power lines P1 and P2, or suppress band B noise from entering the power amplifier 12 via the power line P2. I can do it.

For example, in the high frequency circuit 1 according to the present embodiment, the attenuation band of the filter 34 may include at least a part of the band A.

According to this, at least part of the band A is included in the attenuation band of the filter 34 connected between the power supply terminal 131 and the power amplifier 12. Therefore, it is possible to suppress band A noise generated when the power amplifier 12 amplifies the band B transmission signal from entering the power amplifier 11 via the power lines P1 and P2. In other words, it is possible to suppress quality deterioration of the transmission signal of band A in simultaneous transmission of bands A and B.

Further, for example, in the high frequency circuit 1 according to the present embodiment, the attenuation band of the filter 34 may include at least a part of the band B.

According to this, at least a portion of band B is included in the attenuation band of the filter 34 connected between the power supply terminal 131 and the power amplifier 12. Therefore, it is possible to suppress band B noise generated when the power amplifier 11 amplifies the band A transmission signal from entering the power amplifier 12 via the power lines P1 and P2. In other words, it is possible to suppress quality deterioration of the transmission signal of band B in simultaneous transmission of bands A and B.

For example, the high frequency circuit 1 according to the present embodiment may further include a capacitor 42 connected between the path between the filter 34 and the power amplifier 12 and the ground.

According to this, the capacitor 42 is connected between the path between the filter 34 and the power amplifier 12 and the ground. Therefore, the influence of the filter 34 on the impedance of the power amplifier 12 can be reduced, making it easier to design the filter 34, and suppressing deterioration of the characteristics of the power amplifier 11 due to the filter 34.

Furthermore, for example, the high frequency circuit 1 according to the present embodiment may include a module board 90 on which the power amplifiers 11 and 12 and filters 31 to 34 are mounted and includes a power supply terminal 131.

According to this, the filters 33 and 34 can be mounted on the same module board 90 as the power amplifiers 11 and 12 and the filters 31 and 32, and the wiring length between the filter 33 and the power amplifier 11 can be It is possible to shorten the wiring length between the terminals and contribute to miniaturization of the communication device 6.

For example, in the high frequency circuit 1 according to the present embodiment, the input impedance of the filter 34 may be lower than the input impedance of the filter 32.

According to this, the filter 34 can be configured to have a lower input impedance than the filter 32 on the high frequency signal line, and deterioration of the characteristics of the power amplifier 12 due to the filter 34 can be suppressed.

Furthermore, for example, in the high frequency circuit 1 according to the present embodiment, the filter 34 may be a low-pass filter.

According to this, the design of the filter 34 can be made easier, and harmonics of bands A and/or B can also be attenuated.

For example, in the high frequency circuit 1 according to the present embodiment, the power supply terminal that receives the power supply voltage supplied to the power amplifier 11 and the power supply terminal that receives the power supply voltage supplied to the power amplifier 12 are the same power supply terminal 131. There may be.

According to this, since the power supply lines P1 and P2 are connected at the power supply terminal 131, there is a high possibility that noise will enter the power amplifiers 11 and 12 via the power supply lines P1 and P2. Therefore, noise attenuation by the filters 33 and 34 becomes more effective.

For example, in the high frequency circuit 1 according to the present embodiment, bands A and B may be two different adjacent frequency bands.

According to this, since bands A and B are adjacent to each other, noise in band B increases when band A is amplified, and noise in band A increases when band B is amplified. Therefore, the effect of suppressing the quality deterioration of the transmitted signal by attenuating the noise on the power supply lines P1 and P2 by the filters 33 and 34 becomes greater.

For example, in the high frequency circuit 1 according to the present embodiment, band A may be n77 for 5GNR, and band B may be n79 for 5GNR.

According to this, it is possible to suppress quality deterioration of the transmission signals of n77 and n79 in simultaneous transmission of n77 and n79 for 5GNR.

For example, in the high frequency circuit 1 according to the present embodiment, the power supply voltage supplied to the power amplifiers 11 and 12 may be adjusted in APT mode, SPT mode, or D-ET mode.

According to this, the efficiency of the power amplifiers 11 and 12 can be improved.

Further, the amplification method according to the present embodiment receives a power supply voltage via the power supply line P1 (S101), and uses the received power supply voltage to amplify a transmission signal of band A that can be transmitted simultaneously with band B ( S102), band B noise generated by the amplification of the band A transmission signal is attenuated in the power supply line P1 (S103).

According to this, the band B noise generated when the band A transmission signal is amplified in the power amplifier 11 is attenuated in the power supply line P1, so that the power to amplify the band B transmission signal via the power supply line P1 is It is possible to suppress noise from entering the amplifier 12. In other words, it is possible to suppress quality deterioration of the transmission signal of band B in simultaneous transmission of bands A and B.

For example, the amplification method according to the present embodiment further receives a power supply voltage via the power line P2 (S104), and enables simultaneous transmission with band A using the power supply voltage received via the power line P2. The transmission signal of band B may be amplified (S105), and the noise of band A generated by the amplification of the transmission signal of band B may be attenuated in the power supply line P2 (S106).

According to this, the band A noise generated when the power amplifier 12 amplifies the band B transmission signal is attenuated in the power supply line P2, so the power to amplify the band A transmission signal via the power supply line P2 is It is possible to suppress noise from entering the amplifier 11. In other words, it is possible to suppress quality deterioration of the transmission signal of band A in simultaneous transmission of bands A and B.

(Embodiment 2)
Next, a second embodiment will be described. This embodiment differs from the first embodiment mainly in that a band elimination filter is used instead of a low-pass filter and that two power supply terminals are provided. The present embodiment will be described below, focusing on the differences from the first embodiment.

[2.1 Circuit configuration of communication device 6A]
First, the circuit configuration of the communication device 6A will be described with reference to FIG. FIG. 8 is a circuit configuration diagram of a communication device 6A according to this embodiment. The communication device 6A includes a high frequency circuit 1A, antennas 2a and 2b, an RFIC 3, a BBIC 4, and a voltage supply circuit 5A.

The high frequency circuit 1A transmits high frequency signals between the antennas 2a and 2b and the RFIC 3. The internal configuration of the high frequency circuit 1A will be described later.

The voltage supply circuit 5A can supply a power supply voltage to the high frequency circuit 1A. In this embodiment, the voltage supply circuit 5A can supply the first power supply voltage and the second power supply voltage to which the APT mode, SPT mode, or D-ET mode is applied to the high frequency circuit 1A.

Note that the circuit configuration of the communication device 6A shown in FIG. 8 is an example and is not limited thereto. For example, the communication device 6A may not include the antenna 2a, the antenna 2b, the BBIC 4, or any combination thereof. For example, the communication device 6A may include three or more antennas.

[2.2 Circuit configuration of high frequency circuit 1A]
Next, the circuit configuration of the high frequency circuit 1A will be explained with reference to FIG. The high frequency circuit 1A includes power amplifiers 11 and 12, low noise amplifiers 21 and 22, filters 31, 32, 33A and 34A, capacitors 41 and 42, switches 51 to 53, a PA control circuit 61, and an antenna connection. It includes terminals 101 and 102, high frequency input terminals 111 and 112, high frequency output terminals 121 and 122, power supply terminals 131A and 132A, and control terminal 141.

The power terminal 131A is an example of a first power terminal. The power supply terminal 131A is connected to the voltage supply circuit 5A outside the high frequency circuit 1A, and connected to the power amplifier 11 inside the high frequency circuit 1A. Thereby, the power supply voltage received from the voltage supply circuit 5A via the power supply terminal 131A is supplied to the power amplifier 11.

The power supply terminal 132A is an example of a second power supply terminal. The power supply terminal 132A is connected to the voltage supply circuit 5A outside the high frequency circuit 1A, and connected to the power amplifier 12 inside the high frequency circuit 1A. Thereby, the power supply voltage received from the voltage supply circuit 5A via the power supply terminal 132A is supplied to the power amplifier 12.

Note that in the voltage supply circuit 5A, when two power supply voltages are adjusted in APT mode, SPT mode, or D-ET mode, a multilevel generation circuit that generates voltages at a plurality of discrete levels adjusts the two power supply voltages. Can be shared. At this time, power supply terminals 131A and 132A may be connected to each other via a multilevel generation circuit. As a result, noise on the power line P1 is more likely to be transmitted to the power line P2 via the multilevel generation circuit, and noise on the power line P2 is more likely to be transmitted to the power line P1 via the multilevel generation circuit. In such a situation, the filters 33A and 34A attenuate the noise on the power lines P1 and P2, thereby increasing the effect of suppressing quality deterioration of the transmitted signal.

The filter 33A is an example of a second filter, and is connected between the power supply terminal 131A and the power amplifier 11. Filter 33A has an attenuation band that includes at least a portion of band A. Thereby, the filter 33A can suppress band A noise from entering the power amplifier 11 via the power supply line P1.

In this embodiment, the filter 33A is a band elimination filter, and is composed of, for example, an elastic wave filter. At this time, the input impedance of the filter 33A is lower than the input impedance of the filter 31. Therefore, the filter 33A has a filter design suitable for low input impedance.

The filter 34A is an example of a fourth filter, and is connected between the power supply terminal 132A and the power amplifier 12. Filter 34A has an attenuation band that includes at least a portion of Band B. Thereby, the filter 34A can suppress band B noise from entering the power amplifier 12 via the power supply line P2.

In this embodiment, the filter 34A is a band elimination filter, and is composed of, for example, an elastic wave filter. At this time, the input impedance of the filter 34A is lower than the input impedance of the filter 32. Therefore, the filter 34A has a filter design suitable for low input impedance.

[2.3 Passage characteristics of filters 33A and 34A]
Next, the pass characteristics of the filters 33A and 34A will be explained with reference to FIGS. 9A and 9B. FIG. 9A is a graph showing the pass characteristics of filter 33A according to this embodiment. FIG. 9B is a graph showing the pass characteristics of filter 34A according to this embodiment. In FIGS. 9A and 9B, the horizontal axis represents frequency, and the vertical axis represents gain.

The filter 33A is a band elimination filter and has an attenuation band including band A as shown in FIG. 9A. In the attenuation band of the filter 33A, the lower limit frequency f33AL is lower than the band A lower limit frequency, and the upper limit frequency f33AH is higher than the band A upper limit frequency. Note that the attenuation band of the filter 33A may include only part of the band A. That is, in the attenuation band of the filter 33A, the lower limit frequency f33AL may be higher than the lower limit frequency of band A, or the upper limit frequency f33AH may be lower than the upper limit frequency of band A.

The filter 34A is a band elimination filter and has an attenuation band including band B as shown in FIG. 9B. In the attenuation band of the filter 34A, the lower limit frequency f34AL is lower than the band B lower limit frequency, and the upper limit frequency f34AH is higher than the band B upper limit frequency. Note that the attenuation band of the filter 34A may include only part of the band B. That is, in the attenuation band of the filter 34A, the lower limit frequency f34AL may be higher than the lower limit frequency of band B, or the upper limit frequency f34AH may be lower than the upper limit frequency of band B.

Note that in this embodiment, the attenuation band of the filter 33A may include at least a portion of the band B in addition to at least a portion of the band A. Further, the attenuation band of the filter 34A may include at least a portion of band A in addition to at least a portion of band B.

[2.4 Implementation example of high frequency circuit 1A]
Next, a mounting example of the high frequency circuit 1A will be described with reference to FIGS. 10 to 12. FIG. 10 is a plan view of a high frequency circuit 1A according to a mounting example of this embodiment. FIG. 11 is a plan view of the high frequency circuit 1A according to the mounting example of the present embodiment, and is a perspective view of the main surface 90b side of the module board 90 from the positive side of the z-axis. FIG. 12 is a cross-sectional view of a high frequency circuit 1A according to a mounting example of this embodiment. The cross section of the high frequency circuit 1A in FIG. 12 is the cross section taken along line xii-xii in FIGS. 10 and 11.

In FIGS. 10 to 12, illustrations of the wiring connecting each of the plurality of components arranged on the module board 90 are omitted except for some parts. In FIG. 10, illustration of the resin member 91 and the metal electrode layer 93 that cover the main surface 90a of the module board 90 is omitted. In addition, in Figures 10 to 12, each circuit component may be given an abbreviation (such as "PA") that indicates its function so that the arrangement relationship of each circuit component can be easily understood, but the actual The abbreviation does not need to be given to each circuit component.

In addition to the circuit components including the circuit elements shown in FIG. 8, the high frequency circuit 1A further includes a module substrate 90, resin members 91 and 92, a metal electrode layer 93, and a plurality of post electrodes 150A. Equipped with.

In this implementation example, circuit components are arranged on both sides of the module board 90. Specifically, as shown in FIG. 10, on the main surface 90a of the module board 90, an integrated circuit 10 including power amplifiers 11 and 12 (PA), filters 31 and 32 (BPF), filters 33A and 34A (BEF) and capacitors 41 and 42 (C) are arranged. On the other hand, on the main surface 90b of the module board 90, as shown in FIG. 11, an integrated circuit 20 including low noise amplifiers 21 and 22 (LNA) and an integrated circuit 50 including switches 51 to 53 (SW), A PA control circuit 61 (PAC) is arranged.

The integrated circuit 10 including the power amplifiers 11 and 12 (PA) may be made of, for example, at least one of GaAs, SiGe, and GaN. Note that a part of the integrated circuit 10 may be configured using CMOS, and specifically may be manufactured using an SOI process.

Each of the filters 33A and 34A (BEF) may be configured using any of a SAW filter, a BAW filter, an LC filter, and a dielectric filter, and is not limited to these.

The plurality of post electrodes 150A are arranged on the main surface 90b as shown in FIG. 11. The plurality of post electrodes 150A have a ground terminal in addition to the antenna connection terminals 101 and 102, high frequency input terminals 111 and 112, high frequency output terminals 121 and 122, power supply terminals 131A and 132A, and control terminal 141 shown in FIG. Functions as multiple external connection terminals. Each of the plurality of post electrodes 150A is connected to an input/output terminal and/or a ground terminal on a motherboard arranged in the negative direction of the z-axis of the high frequency circuit 1A.

At least a portion of the post electrode 150A functioning as the power supply terminal 131A overlaps with at least a portion of the filter 33A when the module substrate 90 is viewed from above. Thereby, as shown in FIG. 12, the wiring length of the power supply line P1 can be shortened, and the resistance loss due to the wiring can be reduced.

As shown in FIG. 12, the resin member 92 covers the main surface 90b and the circuit components on the main surface 90b. As a material for the resin member 92, for example, epoxy resin can be used. Note that the material of the resin member 92 is not limited to epoxy resin. The resin member 92 has a function of ensuring reliability such as mechanical strength and moisture resistance of the circuit components on the main surface 90b. Note that the resin member 92 does not necessarily have to be included in the high frequency circuit 1A.

[2.5 Effects etc.]
As described above, the high frequency circuit 1A according to the present modification includes the power amplifier 11, the filter 31 which is connected to the power amplifier 11 and has a pass band including band A that can transmit simultaneously with band B, and A power supply terminal 131A that receives the supplied power supply voltage, a filter 33A connected between the power supply terminal 131A and the power amplifier 11, a power amplifier 12, and a filter 33A that is connected to the power amplifier 12 and has a passband including band B. The filter 33A includes a filter 32, a power supply terminal 132A that receives the power supply voltage supplied to the power amplifier 12, and a filter 34A connected between the power supply terminal 132A and the power amplifier 12. filter 34A has an attenuation band that includes at least a portion of band B;

According to this, at least part of the band A is included in the attenuation band of the filter 33A connected between the power supply terminal 131A and the power amplifier 11. Therefore, band A noise generated when the power amplifier 12 amplifies the band B transmission signal can be suppressed from entering the power amplifier 11 via the power supply lines P1 and P2 and the voltage supply circuit 5A. In other words, it is possible to suppress quality deterioration of the transmission signal of band A in simultaneous transmission of bands A and B. Furthermore, according to this, at least a portion of band B is included in the attenuation band of filter 34A connected between power supply terminal 132A and power amplifier 12. Therefore, it is possible to suppress band B noise generated when the power amplifier 11 amplifies the band A transmission signal from entering the power amplifier 12 via the power supply lines P1 and P2 and the voltage supply circuit 5A. In other words, it is possible to suppress quality deterioration of the transmission signal of band B in simultaneous transmission of bands A and B.

(Modification of Embodiment 2)
Next, a modification of the second embodiment will be described. In this modification, the pass characteristics of filters 33A and 34A are mainly different from those in the second embodiment. This modification will be described below with reference to FIGS. 13A and 13B, focusing on the differences from the second embodiment.

FIG. 13A is a graph showing the pass characteristics of the filter 33A according to this modification. FIG. 13B is a graph showing the pass characteristics of the filter 34A according to this modification. In FIGS. 13A and 13B, the horizontal axis represents frequency, and the vertical axis represents gain.

The filter 33A according to this modification is a band elimination filter, and has an attenuation band including band B as shown in FIG. 13A. In the attenuation band of the filter 33A, the lower limit frequency f33AL is lower than the band B lower limit frequency, and the upper limit frequency f33AH is higher than the band B upper limit frequency. Note that the attenuation band of the filter 33A may include only part of the band B. That is, in the attenuation band of the filter 33A, the lower limit frequency f33AL may be higher than the lower limit frequency of band B, or the upper limit frequency f33AH may be lower than the upper limit frequency of band B.

The filter 34A is a band elimination filter and has an attenuation band including band A as shown in FIG. 13B. In the attenuation band of the filter 34A, the lower limit frequency f34AL is lower than the band A lower limit frequency, and the upper limit frequency f34AH is higher than the band A upper limit frequency. Note that the attenuation band of the filter 34A may include only part of the band A. That is, in the attenuation band of the filter 34A, the lower limit frequency f34AL may be higher than the lower limit frequency of band A, or the upper limit frequency f34AH may be lower than the upper limit frequency of band A.

Note that in this modification, the attenuation band of the filter 33A may include at least a portion of the band A in addition to at least a portion of the band B. Further, the attenuation band of the filter 34A may include at least a portion of band B in addition to at least a portion of band A.

(Other embodiments)
The high frequency circuit and amplification method according to the present invention have been described above based on the embodiments and examples, but the high frequency circuit and amplification method according to the present invention are limited to the above embodiments and modifications thereof. isn't it. Those skilled in the art will be able to come up with other embodiments realized by combining arbitrary constituent elements of the above embodiments and modifications thereof, and other embodiments realized by combining arbitrary components of the above embodiments and modifications thereof, without departing from the spirit of the present invention. The present invention also includes modified examples obtained by performing various modifications and various devices incorporating the above-mentioned high frequency circuit.

For example, in the circuit configuration of the high frequency circuit according to each of the embodiments described above, another circuit element, wiring, etc. may be inserted between the paths connecting the respective circuit elements and signal paths disclosed in the drawings. For example, an impedance matching circuit may be inserted between the power amplifier 11 and the filter 31 and/or between the power amplifier 12 and the filter 32.

Although the high frequency circuit according to each of the embodiments described above includes filters on the power lines P1 and P2, a noise canceller may be provided instead of the filter. At this time, the noise canceller can cancel the noise by, for example, extracting a part of the high frequency signal amplified by the power amplifier, adjusting the phase of the extracted high frequency signal, and supplying it to the power supply line. For example, the noise canceller may adjust the phase of a high frequency signal amplified by a power amplifier connected in parallel with the power amplifier and supply the signal to the power supply line. The configuration of the noise canceller is not particularly limited, and any conventional technology may be used.

The present invention can be widely used in communication devices such as mobile phones as a high frequency circuit placed in a front end section.

1, 1A high frequency circuit 2a, 2b antenna 3 RFIC
4 BBIC
5, 5A Voltage supply circuit 6, 6A Communication device 10, 20, 50 Integrated circuit 11, 12 Power amplifier 21, 22 Low noise amplifier 31, 32, 33, 33A, 34, 34A Filter 41, 42 Capacitor 51, 52, 53 Switch 61 PA control circuit 90 Module board 90a, 90b Main surface 91, 92 Resin member 93 Metal electrode layer 101, 102 Antenna connection terminal 111, 112 High frequency input terminal 121, 122 High frequency output terminal 131, 131A, 132A Power terminal 141 Control terminal 150 Land electrode 150A Post electrode

Claims (20)

1. a first power amplifier;
   a first filter connected to the first power amplifier and having a passband including a first band capable of simultaneous transmission with a second band;
   a first power supply terminal receiving a first power supply voltage supplied to the first power amplifier;
   a second filter connected between the first power supply terminal and the first power amplifier,
   the second filter has an attenuation band that includes at least a portion of the second band;
   High frequency circuit.
2. The attenuation band of the second filter further includes at least a portion of the first band.
   The high frequency circuit according to claim 1.
3. The high frequency circuit further includes a first capacitor connected between a path between the second filter and the first power amplifier and ground.
   The high frequency circuit according to claim 1.
4. The high frequency circuit further includes a module board on which the first power amplifier, the first filter, and the second filter are mounted and includes the first power supply terminal.
   The high frequency circuit according to claim 1.
5. The input impedance of the second filter is lower than the input impedance of the first filter.
   The high frequency circuit according to claim 1.
6. The second filter is a low pass filter or a band elimination filter.
   The high frequency circuit according to claim 1.
7. The high frequency circuit further includes:
   a second power amplifier;
   a third filter connected to the second power amplifier and having a passband including the second band;
   a second power supply terminal receiving a second power supply voltage supplied to the second power amplifier;
   a fourth filter connected between the second power supply terminal and the second power amplifier,
   The fourth filter has an attenuation band that includes at least one of at least a portion of the first band and at least a portion of the second band.
   The high frequency circuit according to any one of claims 1 to 6.
8. the attenuation band of the fourth filter includes at least a portion of the first band;
   The high frequency circuit according to claim 7.
9. the attenuation band of the fourth filter includes at least a portion of the second band;
   The high frequency circuit according to claim 7.
10. The high frequency circuit further includes a second capacitor connected between a path between the fourth filter and the second power amplifier and ground.
    The high frequency circuit according to claim 7.
11. The high frequency circuit further includes the first power amplifier, the second power amplifier, the first filter, the second filter, the third filter, and the fourth filter, and the first power supply terminal and the fourth filter. comprising a module board including two power supply terminals;
    The high frequency circuit according to claim 7.
12. The input impedance of the fourth filter is lower than the input impedance of the third filter.
    The high frequency circuit according to claim 7.
13. The fourth filter is a low pass filter or a band elimination filter.
    The high frequency circuit according to claim 7.
14. the first power terminal and the second power terminal are the same power terminal;
    The high frequency circuit according to claim 7.
15. The first band and the second band are two different adjacent frequency bands,
    The high frequency circuit according to claim 7.
16. The first band is n77 for 5GNR (5th Generation New Radio),
    the second band is n79 for 5GNR;
    The high frequency circuit according to claim 15.
17. The first power supply voltage and the second power supply voltage are adjusted in an average power tracking mode, a symbol power tracking mode, or a digital envelope tracking mode.
    The high frequency circuit according to claim 7.
18. a first power amplifier;
    a first filter connected to the first power amplifier and having a passband including a first band capable of simultaneous transmission with a second band;
    a first power supply terminal receiving a first power supply voltage supplied to the first power amplifier;
    a second filter connected between the first power supply terminal and the first power amplifier;
    a second power amplifier;
    a third filter connected to the second power amplifier and having a passband including the second band;
    a second power supply terminal receiving a second power supply voltage supplied to the second power amplifier;
    a fourth filter connected between the second power supply terminal and the second power amplifier,
    the second filter has an attenuation band that includes at least a portion of the first band;
    The fourth filter has an attenuation band that includes at least a portion of the second band.
    High frequency circuit.
19. receiving a first power supply voltage via a first power supply line;
    Using the received first power supply voltage, amplify a first band transmission signal that can be transmitted simultaneously with a second band,
    attenuating the second band noise generated by amplification of the first band transmission signal in the first power supply line;
    Amplification method.
20. The amplification method further includes:
    receiving a second power supply voltage via a second power supply line;
    amplifying the second band transmission signal using the received second power supply voltage;
    Attenuating the first band noise generated by amplification of the second band transmission signal in the second power supply line;
    The amplification method according to claim 19.

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