WO2023186068A1

WO2023186068A1 - Sensor, x-ray detector and use thereof

Info

Publication number: WO2023186068A1
Application number: PCT/CN2023/085381
Authority: WO
Inventors: 钟韬; 秦文辉; 余肖鹏; 赖晓春
Original assignee: 上海科技大学
Priority date: 2022-04-01
Filing date: 2023-03-31
Publication date: 2023-10-05
Also published as: CN114879242A

Abstract

Provided are a sensor (1), an X-ray detector and the use thereof. The sensor (1) comprises sensing units (11) and shielding layers (12) successively arranged at intervals in a Y direction. Each sensing unit (11) comprises a first electrode layer (111), a sensor layer (112) and a second electrode layer (113) successively arranged in the Y direction. Each first electrode layer (111) comprises a plurality of collector electrodes (1111) successively arranged at intervals in an X direction and used for collecting signals. At least one drift electrode (1112) is arranged at intervals between each two adjacent collector electrodes (1111), so as to reduce the area of the collector electrodes (1111), thereby effectively reducing an input capacitance, reducing the width of a signal waveform, improving signal uniformity, and improving the performance of a detector. Each sensor layer (112) comprises one of gallium arsenide, chromium compensated gallium arsenide, chromium doped gallium arsenide or aluminum doped gallium arsenide. Each second electrode layer (113) comprises at least one cathode (1131). Each shielding layer (12) is located between two adjacent sensing units (11), and comprises at least one of physical shielding and electrical shielding to prevent signal crosstalk.

Description

Sensor, X-ray detector and application thereof

Technical field

The invention belongs to the field of X-ray detectors and relates to a sensor, an X-ray detector and their applications.

Background technique

Computed Tomography (CT) uses X-ray beams, gamma rays, etc. together with extremely sensitive detectors to scan sections of an object one after another. It has the characteristics of fast scanning time and clear images, and is known as Widely used in medical inspection, industrial inspection, security inspection, etc.

At present, commonly used CT detectors are usually energy integrating detectors and photon counting detectors. However, energy integrating detectors have difficulty in energy resolution, high electronic noise, low weight of low energy photons, and poor contrast; photon counting detectors have low energy photon capabilities. The characteristics of no weight reduction, fixed spectral sensitivity, immunity to electronic noise and higher spatial resolution improve the contrast of the image, reduce the radiation dose, improve the spatial resolution without losing dose efficiency, and can Implement spectral (color) CT. However, commonly used photon counting detectors cause crosstalk between adjacent pixels due to the K-edge escape/scattering of photons, and due to slow charge collection, it is easy to accumulate signals and affect imaging quality. Gallium arsenide has become a commonly used sensor layer material for photon counting detectors due to its high electron mobility, but its blocking ability is weak. The blocking ability of a 6mm GaAs detector is equivalent to that of a 2mm CZT/CdTe (cadmium zinc telluride) / cadmium telluride) detector, the current GaAs wafer thickness that can be used for X-ray detection is 0.5mm, and the thickest GaAs detector can only reach 1mm. The detection thickness is insufficient, which seriously affects GaAs photon counting detection. detection efficiency, imaging quality and application range of the detector.

Therefore, there is an urgent need for an X-ray detector that can overcome signal crosstalk and stacking while having good detection efficiency.

Contents of the invention

In view of the above shortcomings of the prior art, the purpose of the present invention is to provide a sensor, an X-ray detector and its application to solve the problems of signal crosstalk, stacking, or low detection efficiency in the X-ray detector in the prior art. question.

In order to achieve the above objects and other related objects, the present invention provides a sensor, including:

A plurality of sensing units are arranged at intervals in the Y direction. At least one of the sensing units includes a first electrode layer, a sensor layer and a second electrode layer sequentially arranged along the Y direction. The first electrode layer includes a first electrode layer along the X direction. A plurality of collection electrodes arranged at intervals in directions, the second electrode layer includes at least one cathode, and the X direction is perpendicular to the Y direction;

A shielding layer is located between two adjacent sensing units.

Optionally, the material of the sensor layer includes one of gallium arsenide and compensation gallium arsenide, and when the material of the sensor layer includes compensation gallium arsenide, the compensation impurities in the compensation gallium arsenide include One of chromium and aluminum.

Optionally, the length range of the sensor layer in the Y direction is 0.01 mm ~ 10 mm, the length range of the sensor layer in the X direction is 0.05 mm ~ 100 mm, and the length range of the sensor layer in the Z direction The length range is 0.1 mm to 100 mm, wherein the Z direction, the X direction and the Y direction are perpendicular to each other.

Optionally, the material of the collection electrode includes at least one of Ti, TiN, Ag, Au, Cu, Al, W, Ni, Zn, Ge and Pt, and the material of the cathode includes Ti, TiN, Ag, At least one of Au, Cu, Al, W, Ni, Zn, Ge and Pt.

Optionally, the length range of the collection electrode in the X direction is 1 μm ~ 10 mm, the length range of the collection electrode in the Y direction is 1 nm ~ 0.1 mm, and the length range of the cathode in the X direction is The length range of the cathode in the Y direction is 0.05 mm to 100 mm, and the length range is 1 nm to 0.1 mm.

Optionally, the collection electrode includes a plurality of electrode strips arranged at intervals along the Z direction, and the Z direction is perpendicular to the X direction and the Y direction.

Optionally, the first electrode layer further includes a plurality of drift electrodes, and one or more drift electrodes are disposed between two adjacent collection electrodes in the X direction.

Optionally, when multiple drift electrodes are provided between two adjacent collection electrodes, at least one pair of drift electrodes located on both sides of any one of the drift electrodes have the same potential.

Optionally, the length of the drift electrode in the X direction ranges from 1 μm to 10 mm, the length of the drift electrode in the Y direction ranges from 1 nm to 0.1 mm, and the length of the drift electrode in the Z direction ranges from 1 nm to 0.1 mm. Less than or equal to the length of the sensor layer in the Z direction.

Optionally, the material of the shielding layer includes at least one of gold, silver, copper, iron, lead and cadmium, and the shielding layer is electrically insulated and electrically connected to the reference voltage.

Optionally, at least one of the sensing units includes the first electrode layer, the sensor layer and the second electrode layer that are sequentially arranged along the negative Y direction.

The invention also provides an X-ray detector, including:

Using the above-mentioned sensors;

At least one dedicated integrated chip is located below the sensor.

Optionally, an adapter board is provided between the sensor and the application-specific integrated chip.

Optionally, the adapter board is electrically connected to the sensor and the application-specific integrated chip respectively, and the adapter board is electrically connected to an external circuit.

Optionally, the dedicated integrated chip is electrically connected to the sensor, and a first PCB circuit board is provided below the dedicated integrated chip.

Optionally, the first PCB circuit board is electrically connected to the application-specific integrated chip and an external circuit.

Optionally, a plurality of second PCB circuit boards parallel to the sensor layer are provided below the sensor.

Optionally, the length of the shielding layer in the Z direction is greater than the length of the sensor layer in the Z direction, and the shielding layer protrudes beyond the sensor layer in the negative Z direction, and the second PCB The side of the circuit board facing the negative Y direction is adhered to the shielding layer, and the side of the second PCB circuit board facing the Y direction is embedded with the dedicated integrated chip.

Optionally, when the first electrode layer includes a drift electrode, the voltage difference between the drift electrode and the collection electrode ranges from 1V to 5kV.

The present invention also provides an application of an X-ray detector, which applies the above-mentioned X-ray detector to CT or X-ray imaging.

As mentioned above, the sensor, X-ray detector and their applications of the present invention are designed by designing the sensor in the X-ray detector and the structure of the X-ray detector. The sensor is in the Y direction. A plurality of sensing units are arranged at intervals in order to increase the sensitive area area of the sensor, wherein the sensing unit includes the first electrode layer, the sensor layer and the second electrode layer sequentially arranged along the Y direction. Electrode layer, when the first electrode layer includes a plurality of collection electrodes arranged at intervals along the X direction, used to collect sensor signals; when the collection electrodes are arranged into a plurality of collection electrodes arranged at intervals along the Z direction When the electrode strips are used, the signal processing amount of each electrode strip can be reduced, the signal-to-noise ratio can be enhanced, while signal stacking can be prevented, and the performance of the X-ray detector can be improved; when the first electrode layer includes multiple When the drift electrodes are arranged at intervals in the X direction, the area of the collection electrode can be reduced, thereby reducing the input capacitance of the collection electrode, reducing the signal waveform width, and improving signal uniformity; between adjacent two Arranging a plurality of drift electrodes spaced between the collection electrodes can ensure charge collection efficiency and further improve the performance of the X-ray detector. In addition, the X-ray detector can be used for CT or X-ray imaging to improve the imaging quality of X-ray imaging equipment, which has high industrial utilization value.

Description of drawings

Figure 1 shows a schematic three-dimensional structural diagram of the sensor of the present invention.

Figure 2 shows a schematic diagram of the first electrode layer structure along the XZ plane of the sensor of the present invention.

Figure 3 shows a schematic cross-sectional structural diagram of the sensor of the present invention along the YZ plane.

Figure 4 shows another schematic diagram of the first electrode layer structure along the XZ plane of the sensor of the present invention.

FIG. 5 shows a schematic diagram of the first electrode layer structure along the XZ plane when the sensor of the present invention is provided with a drift electrode.

FIG. 6 shows another schematic diagram of the structure of the first electrode layer along the XZ plane when a drift electrode is provided for the sensor of the present invention.

Figure 7 shows a diagram along the XZ plane when multiple drift electrodes are arranged between two adjacent collection electrodes of the sensor of the present invention. Schematic diagram of the structure of the first electrode layer.

FIG. 8 shows another schematic diagram of the structure of the first electrode layer along the XZ plane when multiple drift electrodes are disposed between two adjacent collection electrodes of the sensor of the present invention.

Figure 9 shows another sectional structural diagram of the sensor of the present invention along the YZ plane.

Figure 10 shows a schematic three-dimensional structural diagram of the X-ray detector of the present invention.

Figure 11 shows a schematic cross-sectional structural diagram of the X-ray detector of the present invention along the YZ plane.

Figure 12 shows a schematic plan view of the X-ray detector of the present invention along the XZ plane.

Figure 13 shows another planar structure schematic diagram of the X-ray detector of the present invention along the XZ plane.

Figure 14 shows a schematic diagram of the third planar structure of the X-ray detector of the present invention along the XZ plane.

Figure 15 shows a third sectional structural diagram of the X-ray detector of the present invention along the YZ plane.

Figure 16 shows a module diagram of the imaging system when the X-ray detector of the present invention is used in X-ray imaging.

Figure 17 shows a module diagram of the imaging system when the X-ray detector of the present invention is used in CT imaging.

Component label description
1 sensor
11 sensing unit
111 First electrode layer
1111 collection electrode
1112 drift electrode
11111 Electrode Strip
112 sensor layer
113 Second electrode layer
1131 cathode
12 shielding layer
2 ASIC
21 adapter board
22 First PCB circuit board
23 Second PCB circuit board

Detailed ways

The following illustrates the implementation of the present invention through specific examples. Those skilled in the art can understand from this specification. You can easily understand other advantages and effects of the present invention through the content. The present invention can also be implemented or applied through other different specific embodiments. Various details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

See Figure 1 through Figure 17. It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. The drawings only show the components related to the present invention and do not follow the actual implementation of the component numbers, shapes and components. Dimension drawing, in actual implementation, the type, quantity and proportion of each component can be arbitrarily changed, and the component layout type may also be more complex.

Embodiment 1

This embodiment provides a sensor, as shown in Figures 1, 2 and 3, which are respectively a three-dimensional structural diagram of the sensor, a planar structural diagram of the sensor along the XZ plane, and a cross-section along the YZ plane. The structural schematic diagram includes a plurality of sensing units 11 and a shielding layer 12. The plurality of sensing units 11 are arranged at intervals in the Y direction, and at least one of the sensing units includes a first sensor unit arranged sequentially in the Y direction. Electrode layer 111, sensor layer 112 and second electrode layer 113. The first electrode layer 111 includes a plurality of collection electrodes 1111 arranged at intervals along the X direction. The second electrode layer 113 includes at least one cathode 1131. The X direction is perpendicular to the Y direction; the shielding layer 12 is located between two adjacent sensing units.

As an example, the material of the sensor layer 112 may include one of gallium arsenide and compensation gallium arsenide, or may include other suitable semiconductor materials. When the material of the sensor layer 112 includes compensation gallium arsenide, The compensation impurities in the compensation gallium arsenide may include one of chromium and aluminum, or other suitable impurities that can increase the resistivity of the sensor layer 112 . In this embodiment, a gallium arsenide layer is used as the sensor layer 112 .

Specifically, selecting the sensor layer 112 with a larger resistivity can reduce the dark current of the detector at room temperature, thereby reducing the interference of the dark current on the signal and improving the performance of the detector.

As an example, the length range of the sensor layer 112 in the Y direction is 0.01 mm ~ 10 mm, and the length range of the sensor layer 112 in the X direction is 0.05 mm ~ 100 mm. The length range in the Z direction is 0.1 mm to 100 mm. For example, the length of the sensor layer 112 in the Y direction may be 0.05 mm, 1 mm or 5 mm. The length of the sensor layer 112 in the X direction may be is 0.1mm, 10mm, 20mm, 60mm or 80mm, and the length of the sensor layer 112 in the Z direction can be 1mm, 40mm, 60mm or 80mm, where the Z direction is the same as the X direction and the Y direction. The directions are perpendicular to each other.

Specifically, the separation distance between two adjacent sensor layers 112 can be set according to actual conditions, and is no longer limited here.

As an example, the material of the collection electrode 1111 may include Ti, TiN, Ag, Au, Cu, Al, W, Ni, At least one of Zn, Ge and Pt may also include other suitable conductive materials. The material of the cathode 1131 may include Ti, TiN, Ag, Au, Cu, Al, W, Ni, Zn, Ge and Pt. At least one of them may also include other suitable conductive materials.

Specifically, a protective layer insulated from the first electrode layer 111 may be provided on the surface of the first electrode layer 111 as needed to protect the first electrode layer 111 .

As an example, the length range of the collection electrode 1111 in the X direction is 1 μm ~ 10 mm, the length range of the collection electrode 1111 in the Y direction is 1 nm ~ 0.1 mm, and the collection electrode 1111 is in the Z direction. The length is no longer than the length of the sensor layer 112 in the Z direction, the length range of the cathode 1131 in the X direction is 0.05mm～100mm, and the length range of the cathode 1131 in the Y direction is 1nm～ 0.1 mm, the length of the cathode 1131 in the Z direction is no longer than the length of the sensor layer 112 in the Z direction. For example, the length of the collection electrode 1111 in the X direction may be 0.05 mm, 0.5 mm, 2 mm or 6 mm, and the length of the collection electrode 1111 in the Y direction may be 10 nm, 100 nm, 1 μm or 0.09 mm, so The length of the cathode 1131 in the X direction may be 0.1 mm, 1 mm, 20 mm or 50 mm, and the length of the cathode 1131 in the Y direction may be 10 nm, 100 nm, 1 μm or 0.09 mm.

Specifically, the spacing distance between two adjacent columns of the collection electrodes 1111 can be set according to the actual situation, and is no longer limited here.

As an example, as shown in FIG. 4 , it is another structural schematic diagram of the collection electrode 1111 . The collection electrode 1111 includes a plurality of electrode strips 11111 arranged at intervals along the Z direction. The Z direction is perpendicular to the X direction. and the Y direction.

Specifically, when the collection electrode 1111 includes a plurality of electrode strips 11111 arranged at intervals along the Z direction, the spacing distance between two adjacent electrode strips 11111 in the collection electrode 1111 can be determined according to actual conditions. The number of the electrode strips 11111 can be set according to the actual situation, which is no longer limited here.

Specifically, when the collection electrode 1111 includes a plurality of electrode strips 11111 arranged at intervals along the Z direction, the electrode strips 11111 are used to reduce the amount of signal processed by each electrode strip 11111 to prevent signal loss. Accumulation occurs at the collection electrode 1111 . In addition, after the sensor 1 is irradiated by X-rays, the amount of charge generated in the sensor layer 112 is proportional to the energy of the incident photon, and the output signal intensity is proportional to the energy of the incident photon. The segmented processing can enhance the output signal. signal-to-noise ratio, improving the detection performance of the detector.

Specifically, when the collection electrode 1111 includes a plurality of electrode strips 11111 arranged at intervals along the Z direction, the length of each electrode strip 11111 in each column of the collection electrodes 1111 in the Z direction can be Set according to actual situation.

Specifically, as shown in FIG. 5 and FIG. 6 , there is a schematic plan view of the first electrode layer 111 along the XZ plane and another plan view of the first electrode layer 111 along the XZ plane when the drift electrode 1112 is provided. Structural diagram. In an example, the first electrode layer 111 further includes a plurality of drift electrodes 1112. In the X direction, one or more of the collection electrodes 1111 are disposed between two adjacent ones. The drift electrode 1112 is described.

Specifically, the drift electrode 1112 is used to reduce the area of the collection electrode 1111, thereby reducing the input capacitance of the collection electrode 1111, reducing the signal waveform width, improving signal uniformity, improving the performance of the sensor 1, and reducing noise, thereby ensuring the consistency between the output signal and the real signal, and further improving the performance of the sensor 1.

Specifically, the drift electrode 1112 may be made of at least one of Ti, TiN, Ag, Au, Cu, Al, W, Ni, Zn, Ge, and Pt, and may also include other suitable conductive materials.

Specifically, the length range of the drift electrode 1112 in the X direction is 1 μm ~ 10 mm, the length range of the drift electrode 1112 in the Y direction is 1 nm ~ 0.1 mm, and the drift electrode 1112 is in the Z direction. The length is less than or equal to the length of the sensor layer 112 in the Z direction. For example, the length of the drift electrode 1112 in the X direction may be 50 μm, 500 μm, 2 mm, or 6 mm, and the length of the drift electrode 1112 in the Y direction may be 100 nm, 500 nm, 1 μm, or 50 μm.

Specifically, a first insulating layer (not shown) is provided on the surfaces of the collection electrode 1111 and the drift electrode 1112 to prevent the electric field between the collection electrode 1111 and the drift electrode 1112 from being Electrical breakdown occurs, damaging the collection electrode 1111 and the drift electrode 1112 .

Specifically, as shown in FIG. 7 and FIG. 8 , it is a schematic plan view of one kind of the first electrode layer 111 and another kind when a plurality of the drift electrodes 1112 are arranged between two adjacent collection electrodes 1111 . Schematic diagram of the planar structure of the first electrode layer 111. In the second example, when a plurality of drift electrodes 1112 are disposed between two adjacent collection electrodes 1111, at least one pair of drift electrodes is located on any one of the drift electrodes. The potentials of the drift electrodes 1112 on both sides of 1112 are the same.

Specifically, a plurality of drift electrodes 1112 are provided between two adjacent collection electrodes 1111 to prevent crosstalk of charges generated in the sensor layer 112, so that the charges are transferred to the collection electrodes 1111 and the corresponding collection electrodes 1111 at corresponding positions. The cathode 1131 collects and prevents charges from being recombined to the drift electrode 1112, further improving the performance of the detector.

Specifically, the sensor 1 is also provided with a collection electrode port (not shown) electrically connected to the collection electrode 1111, a cathode terminal (not shown) electrically connected to the cathode 1131, and at least one terminal connected to the cathode 1131. The drift electrode 1112 is electrically connected to a drift electrode port (not shown).

Specifically, the collection electrode port, the cathode port and the drift electrode port are used to connect an external circuit for processing signals of the sensor 1 .

As an example, the material of the shielding layer 12 includes at least one of gold, silver, copper, iron, lead, tungsten and cadmium, or may be It can be other suitable heavy metal materials, and the shielding layer 12 is electrically insulated and electrically connected to the reference voltage.

Specifically, the shielding layer 12 is used to isolate two adjacent sensing units 11, and the shielding layer 12 can also block X-rays and prevent signal crosstalk caused by the Compton effect. The shielding layer 12 electrically Connect the reference voltage to prevent signal crosstalk caused by electrical signals.

Specifically, the length of the shielding layer 12 along the Z direction is not less than the length of the sensor layer 112 along the Z direction, and the length of the shielding layer 12 along the X direction is not less than the length of the sensor layer 112 along the Z direction. The length in the X direction.

As an example, as shown in FIG. 9 , which is another cross-sectional structural diagram of the sensor 1 along the YZ plane, at least one of the sensing units 11 includes the first electrode layer 111 sequentially arranged along the negative Y direction. the sensor layer 112 and the second electrode layer 113.

The sensor of this embodiment increases the area of the sensitive area of the sensor 1 by arranging a plurality of the sensing units 11 at intervals along the Y direction, and performs a series of operations on the first electrode layer 111 of the sensor 1 Design, the first electrode layer 111 is divided into a plurality of collection electrodes 1111 arranged at intervals along the X direction, and an insulating heavy metal layer is provided between two adjacent sensing units 11 as the shield. Layer 12 blocks X-rays while preventing signal crosstalk, and enables detection of X-rays in large areas and small pixels; when the collection electrode 1111 is divided into multiple electrode strips 11111, each electrode can be reduced The signal processing capacity of the strip 11111 prevents signal stacking, reduces noise, and enhances the signal-to-noise ratio; when the first electrode layer 111 includes a plurality of drift electrodes 1112 arranged at intervals along the X direction, the The input capacitance of the collection electrode 1111 reduces the signal waveform width and improves signal uniformity, while ensuring the consistency between the output signal of the sensor 1 and the real signal, improving the performance of the sensor 1; The plurality of drift electrodes 1112 disposed between the collection electrodes 1111 can ensure the charge collection efficiency and improve the performance of the detector.

Embodiment 2

This embodiment provides an X-ray detector, as shown in Figures 10 and 11, which are a three-dimensional structural schematic diagram of a structure of the X-ray detector and a cross-section of the X-ray detector along the YZ plane The structural schematic diagram includes a sensor 1 and at least one dedicated integrated chip 2, wherein the sensor 1 is the sensor in Embodiment 1, and the dedicated integrated chip 2 is located below the sensor 1.

Specifically, the dedicated integrated chip 2 is an integrated circuit chip designed and prepared to adapt to the sensor 1 and is used to process the signals generated by the sensor 1, and the dedicated integrated chip 2 can be used for energy integrating X-rays. Signal processing of detectors or photon counting X-ray detectors.

As an example, as shown in FIG. 12 , which is a schematic plan view of the X-ray detector along the XZ plane, an adapter board 21 is provided between the X-ray detector 1 and the dedicated integrated chip 2 .

Specifically, the size of the adapter plate 21 can be set according to actual needs and is no longer limited here.

As an example, the adapter board 21 is electrically connected to the sensor 1 and the application-specific integrated chip 2 respectively, and the adapter board 21 is electrically connected to an external circuit to supply power to the application-specific integrated chip 2 .

Specifically, the adapter board 21 is provided with a circuit connecting the application-specific integrated chip 2 and the sensor 1 so that the application-specific integrated chip 2 processes the signal generated by the sensor 1 .

As an example, as shown in Figure 13, it is a schematic diagram of another planar structure of the X-ray detector along the XZ plane. The dedicated integrated chip 2 is electrically connected to the sensor 1, and there is another schematic diagram below the dedicated integrated chip 2. A first PCB circuit board 22 is provided.

Specifically, the size of the first PCB circuit board 22 can be set according to actual needs and is no longer limited here.

As an example, the first PCB circuit board 22 is electrically connected to the application-specific integrated chip 2 and an external circuit.

Specifically, the first PCB circuit board 22 is provided with a circuit that supplies power to the dedicated integrated chip 2 , for supplying power to the dedicated integrated chip 2 so that the dedicated integrated chip 2 processes the information in the sensor 1 generated signal.

As an example, as shown in Figures 14 and 15 , which are respectively a third planar structural diagram of the X-ray detector along the XZ plane and a third cross-sectional structural diagram of the X-ray detector along the YZ plane, the sensor 1 A plurality of second PCB circuit boards 23 parallel to the sensor layer 112 are also provided below.

Specifically, the size of the second PCB circuit board 23 can be set as needed, and is no longer limited here.

As an example, the length of the shielding layer 12 in the Z direction is greater than the length of the sensor layer 112 in the Z direction, and the shielding layer 12 protrudes beyond the sensor layer 112 in the negative Z direction, and the second PCB circuit The side of the board 23 facing the negative Y direction is adhered to the shielding layer 12 , and the side of the second PCB circuit board 23 facing the Y direction is embedded with the application-specific integrated chip 2 .

Specifically, the length of the shielding layer 12 protruding from the sensor layer 112 along the negative Z direction is greater than the length of the second PCB circuit board 23 along the Z direction.

Specifically, the second PCB circuit board 23 is provided with a circuit connecting the sensor 1 and the application-specific integrated chip 2, and the sensor 1 and the application-specific integrated chip 2 are respectively connected to the second PCB circuit board. 23 is electrically connected, and then the sensor 1 is electrically connected to the application-specific integrated chip 2 through the second PCB circuit board. At the same time, the second PCB circuit board 23 is electrically connected to an external circuit to power the application-specific integrated chip 2. Chip 2.

Specifically, when the X-ray detector is working, different voltages are applied to the collection electrode 1111 and the cathode 1131, and the potential of the collection electrode 1111 is higher than the potential of the cathode 1131.

Specifically, the voltage difference between the collection electrode 1111 and the cathode 1131 is less than 5 kV.

As an example, when the first electrode layer 111 includes the drift electrode 1112, the voltage difference between the drift electrode 1112 and the collection electrode 1111 ranges from 1V to 5kV. For example, the drift electrode 1112 and the collecting electrode The voltage difference between poles 1111 can be 100V, 500V, 1kV or 3kV.

Specifically, the potential of the drift electrode 1112 is lower than the potential of the collection electrode 1111 and higher than the potential of the cathode 1131 .

The X-ray detector of this embodiment uses the sensor 1 in Embodiment 1 to receive X-rays, and the dedicated integrated chip 2 for processing the signal in the sensor 1 is provided below the sensor 1. In the case of low-dose X-rays, the signal-to-noise ratio is enhanced, higher-quality images are obtained, and the performance of the X-ray detector is improved.

Embodiment 3

This embodiment provides an application of an X-ray detector, as shown in Figures 16 and 17, which are system module diagrams when the X-ray detector is used in X-ray imaging and when the X-ray detector is used in CT, respectively. System module diagram during imaging. The application applies the X-ray detector in Embodiment 2 to CT or X-ray imaging.

Specifically, when the X-ray detector is applied to CT, X-ray imaging or other X-ray imaging equipment, through the arrangement of the collection electrode 1111 and the drift electrode 1112 in the sensor 1, it is possible to reduce the The signal crosstalk and electrical signal crosstalk caused by the Compton effect during imaging simultaneously enhance the signal-to-noise ratio, prevent signal stacking, reduce the input capacitance, reduce the signal waveform width and improve the signal uniformity, thereby improving improve the imaging quality of the device.

The application of the X-ray detector in this embodiment improves the imaging quality of the X-ray imaging equipment by applying the X-ray detector described in Embodiment 2 to CT or X-ray imaging.

To sum up, the sensor, X-ray detector and application thereof of the present invention increase the sensitive area area of the sensor by arranging multiple sensing units at intervals along the Y direction, and arrange the first electrode layer located on one side of the sensor layer Divide into multiple collection electrodes arranged at intervals along the X direction to achieve the small pixel effect of the sensor; set up an insulating heavy metal shielding layer between adjacent sensing units to block Electrode strips arranged at intervals along the Z direction can reduce the signal processing volume of each electrode strip, prevent signal stacking, and enhance the signal-to-noise ratio; when the first electrode layer also includes multiple drift electrodes arranged at intervals in the X direction , reduces the input capacitance of the collection electrode, reduces the signal waveform width, improves signal uniformity, ensures charge collection efficiency, improves the performance of the X-ray detector, and reduces noise, ensuring the consistency between the output signal and the real signal, achieving Higher quality image display is achieved; in addition, the X-ray detector of the present invention can also be used for CT or X-ray imaging to improve the imaging quality of X-ray imaging equipment. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

The above embodiments only illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed in the present invention shall still be covered by the claims of the present invention.

Claims

A sensor, characterized in that it includes:

A plurality of sensing units are arranged at intervals in the Y direction. At least one of the sensing units includes a first electrode layer, a sensor layer and a second electrode layer sequentially arranged along the Y direction. The first electrode layer includes a first electrode layer along the X direction. A plurality of collection electrodes arranged at intervals in directions, the second electrode layer includes at least one cathode, and the X direction is perpendicular to the Y direction;

A shielding layer is located between two adjacent sensing units.
The sensor according to claim 1, wherein the material of the sensor layer includes one of gallium arsenide or compensated gallium arsenide, and when the material of the sensor layer includes doped gallium arsenide, the sensor layer is made of doped gallium arsenide. The compensation impurity in the compensation gallium arsenide includes one of chromium or aluminum.
The sensor according to claim 1, characterized in that: the length range of the sensor layer in the Y direction is 0.01mm～10mm, and the length range of the sensor layer in the X direction is 0.05mm～100mm. , the length of the sensor layer in the Z direction ranges from 0.1 mm to 100 mm, wherein the Z direction, the X direction and the Y direction are perpendicular to each other.
The sensor according to claim 1, wherein the collection electrode is made of at least one of Ti, TiN, Ag, Au, Cu, Al, W, Ni, Zn, Ge and Pt, and the cathode The materials include at least one of Ti, TiN, Ag, Au, Cu, Al, W, Ni, Zn, Ge and Pt.
The sensor according to claim 1, characterized in that: the size range of the collection electrode in the X direction is 1 μm ~ 10 mm, and the length range of the collection electrode in the Y direction is 1 nm ~ 0.1 mm, and the The length of the cathode in the X direction ranges from 0.05 mm to 100 mm, and the length of the cathode in the Y direction ranges from 1 nm to 0.1 mm.
The sensor according to claim 1, wherein the collection electrode includes a plurality of electrode strips arranged at intervals along the Z direction, and the Z direction is perpendicular to the X direction and the Y direction.
The sensor according to claim 1 or 6, characterized in that: the first electrode layer further includes a plurality of drift electrodes, and in the X direction, one or more adjacent collection electrodes are disposed between them. one of the drift electrodes.
The sensor of claim 7, wherein when a plurality of drift electrodes are disposed between two adjacent collection electrodes, at least one pair of drift electrodes located on both sides of any one of the drift electrodes have the same potential.
The sensor according to claim 7, characterized in that: the length range of the drift electrode in the X direction is 1 μm ~ 10 mm, and the length range of the drift electrode in the Y direction is 1 nm ~ 0.1 mm, and the The length of the drift electrode in the Z direction is less than or equal to the length of the sensor layer in the Z direction.
The sensor according to claim 1, wherein the shielding layer is made of at least one of gold, silver, copper, iron, lead, tungsten and cadmium, and the shielding layer is electrically insulated and electrically connected to the reference Voltage.
The sensor according to claim 1, wherein at least one of the sensing units includes the first electrode layer, the sensor layer and the second electrode layer that are sequentially arranged along the negative Y direction.
An X-ray detector, characterized by including:

The sensor according to any one of claims 1 to 11;

At least one dedicated integrated chip is located below the sensor.
The X-ray detector according to claim 12, characterized in that: a connection board is provided between the sensor and the dedicated integrated chip.
The X-ray detector according to claim 13, wherein the adapter board is electrically connected to the sensor and the dedicated integrated chip respectively, and the adapter board is electrically connected to an external circuit.
The X-ray detector according to claim 12, characterized in that: the dedicated integrated chip is electrically connected to the sensor, and a first PCB circuit board is provided below the dedicated integrated chip.
The X-ray detector according to claim 15, characterized in that: the first PCB circuit board is electrically connected to the dedicated integrated chip and an external circuit.
The X-ray detector according to claim 12, wherein a plurality of second PCB circuit boards parallel to the sensor layer are provided below the sensor.
The X-ray detector according to claim 17, characterized in that: the length of the shielding layer in the Z direction is large. Based on the length of the sensor layer in the Z direction, and the shielding layer protrudes from the sensor layer in the negative Z direction, the side of the second PCB circuit board facing the negative Y direction is adhered to the shielding layer, the side of the second PCB circuit board facing the Y direction is embedded with the dedicated integrated chip.
The X-ray detector according to claim 12, wherein when the first electrode layer includes a drift electrode, the voltage difference between the drift electrode and the collection electrode ranges from 1V to 5kV.
An application of an X-ray detector, characterized in that the application includes applying the X-ray detector according to any one of claims 12 to 19 to CT or X-ray imaging.