WO2023181943A1

WO2023181943A1 - Substrate-processing method and substrate-processing apparatus

Info

Publication number: WO2023181943A1
Application number: PCT/JP2023/008806
Authority: WO
Inventors: 宗儒林
Original assignee: 株式会社Ｓｃｒｅｅｎホールディングス
Priority date: 2022-03-22
Filing date: 2023-03-08
Publication date: 2023-09-28
Also published as: JP2023139604A; TW202343557A

Abstract

Provided is a method that allows for appropriate removal by SPM processing of residue or a residual film that is difficult to remove on a peripheral portion of a substrate. This substrate-processing method comprises: a first step of forming a protective film including an SOG film on the main surface of a substrate, the peripheral portion of the main surface not being covered by the protective film, and the region of the main surface on the inside of the peripheral portion being covered by the protective film; a second step of, after the protective-film-forming step, removing residue or a residual film on the peripheral portion by a processing solution including a mixture of sulfuric acid and hydrogen peroxide; and a third step of, after the residual film removal step, removing the protective film.

Description

Substrate processing method and substrate processing apparatus

The present disclosure relates to a substrate processing method and a substrate processing apparatus.

Semiconductor devices are manufactured by forming various patterns on one main surface of a substrate. Various patterns are formed in the central region of one main surface of the substrate, and are not formed in the peripheral region.

On the peripheral edge of this substrate, residues of various substances may adhere during pattern formation, or unnecessary films remaining from the previous process may remain. In order to remove such residues and remaining films, bevel processing is sometimes performed to clean the peripheral edge of the substrate. As a substrate processing apparatus that performs such bevel processing, for example, the substrate processing apparatus described in Patent Document 1 may be employed. In Patent Document 1, a substrate processing apparatus includes a substrate holding section and a nozzle. The substrate holder holds the substrate in a horizontal position and rotates the substrate around a vertical axis of rotation passing through the center of the substrate. The nozzle discharges the processing liquid toward the periphery of the rotating substrate, and supplies the processing liquid to the periphery of the substrate. The peripheral edge of the substrate can be cleaned by the treatment liquid acting on the peripheral edge of the substrate.

Some residual films remaining on the peripheral edge of the substrate are strongly bonded to the substrate and cannot be easily removed with normal cleaning solutions or etching solutions. Examples of such residual films that are difficult to remove include a resist residual film having a hardened layer, and a residual film of amorphous carbon, NiPt alloy, etc. formed on a substrate in a film forming process or the like. Etching treatment using SPM (a mixed solution of sulfuric acid and hydrogen peroxide solution) is available as a means for removing such a difficult-to-remove residual film.

JP 2015-70023 Publication

Because sulfuric acid and SPM have high viscosity, it is difficult to perform etching treatment only on the peripheral edge of the substrate using sulfuric acid or SPM. Further, since the vapor generated by the mixture of sulfuric acid and hydrogen peroxide flows to areas other than the periphery of the substrate, there is a risk that the pattern formed in the center of the substrate may be contaminated.

Therefore, an object of the present disclosure is to provide a technique that can appropriately remove difficult-to-remove residues or residual films on the peripheral edge of a substrate by SPM processing.

A first aspect is a substrate processing method, which is a step of forming a protective film including an SOG film on a main surface of a substrate, wherein a peripheral portion of the main surface is not covered with the protective film; a first step of forming the protective film so that a region inside the peripheral edge of the main surface is covered with the protective film; and after the first step, a treatment including a mixed solution of sulfuric acid and hydrogen peroxide solution. The method includes a second step of removing a residue or a remaining film on the peripheral edge portion with a liquid, and a third step of removing the protective film after the second step.

A second aspect is the substrate processing method according to the first aspect, wherein the residue or the remaining film includes at least one of a resist including a hardened layer, amorphous carbon, and a NiPt alloy.

A third aspect is the substrate processing method according to the first or second aspect, in which in the third step, the protective film is removed with a chemical solution containing hydrofluoric acid.

A fourth aspect is the substrate processing method according to any one of the first to third aspects, wherein the first step includes discharging a chemical solution containing hydrofluoric acid from a first nozzle toward the substrate; a protective bevel step of removing a peripheral portion of the SOG film formed on the entire surface of the main surface of the substrate using the chemical solution and forming the protective film on the inner region of the main surface; The processing liquid is discharged toward the substrate from a second nozzle having a discharge opening larger than the discharge opening of the first nozzle, and the residue or the remaining film is removed by the processing liquid.

A fifth aspect is the substrate processing method according to the fourth aspect, in which in the first step, from the first nozzle provided at a position facing the main surface of the substrate in a vertical direction, The peripheral edge portion of the SOG film is removed by discharging the chemical solution along a discharging direction facing the protective film. The processing liquid that has landed on the protective film is caused to flow from the protective film toward the peripheral edge of the substrate by rotating the substrate.

A sixth aspect is the substrate processing method according to the fourth or fifth aspect, wherein the first step is performed before the protective bevel step, and the first step is performed to apply a coating liquid to the main surface of the substrate. , further comprising a protective film forming step of drying the coating liquid to form the protective film.

A seventh aspect of the substrate processing apparatus is such that a peripheral portion of the main surface is not covered with a protective film including an SOG film, and a region inside the peripheral portion of the main surface is covered with the protective film. a substrate holding unit that rotates the covered substrate while holding the covered substrate in a horizontal position; and a substrate holding unit that discharges a processing liquid containing a mixed solution of sulfuric acid and hydrogen peroxide solution to remove the peripheral edge of the main surface of the substrate. and a nozzle for removing residue or residual film on the part using a treatment liquid.

According to the first and seventh aspects, the residue or remaining film on the peripheral edge of the substrate is removed by SPM while covering the inner region of the main surface of the substrate with the SOG film. Since the SOG film is hardly removed by SPM, the residue or residual film can be properly removed while properly protecting the inner region of the substrate.

According to the second aspect, it is possible to remove residues or residual films that are difficult to remove.

According to the third aspect, the protective film can be removed while suppressing damage to the peripheral edge of the substrate.

According to the fourth aspect, since the viscosity of the chemical solution is low, the protective peripheral portion can be removed with high positional accuracy. Further, although the viscosity of SPM is high, since the discharge port of the second nozzle is large, the second nozzle can discharge SPM more appropriately.

According to the fifth aspect, in the protective bevel step, the end surface of the protective film can be made into an inclined surface. Therefore, in the subsequent second step, the processing liquid flows smoothly from the slope of the protective film to the peripheral edge of the substrate. Therefore, the processing liquid tends to act on the boundary between the inclined surface and the peripheral edge of the substrate, so that the peripheral edge of the substrate can be treated more appropriately.

According to the sixth aspect, the protective film can be formed using an inexpensive wet processing unit.

FIG. 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus. 1 is a vertical cross-sectional view schematically showing an example of the configuration of a substrate processing apparatus. 2 is a diagram schematically showing an example of the configuration of a substrate W. FIG. FIG. 2 is a functional block diagram schematically showing an example of an internal configuration of a control unit. 3 is a flowchart illustrating an example of a substrate processing method executed by the substrate processing apparatus. FIG. 3 is a diagram schematically showing an example of the state of the substrate W in each step. FIG. 3 is a diagram schematically showing an example of the configuration of a coating unit. It is a flowchart which shows a specific example of a protective film formation process. FIG. 3 is a diagram schematically showing an example of the configuration of a bevel unit. FIG. 2 is a plan view schematically showing an example of the configuration of a bevel unit. FIG. 2 is a plan view schematically showing an example of the configuration of a heating section. 7 is a flowchart showing a specific example of protection bevel processing. FIG. 2 is a diagram schematically showing an example of the configuration of a cleaning unit. 2 is a flowchart showing a specific example of substrate bevel processing and protective film removal processing.

Hereinafter, embodiments will be described with reference to the attached drawings. Note that the drawings are shown schematically, and for convenience of explanation, structures are omitted or simplified as appropriate. Further, the sizes and positional relationships of the structures shown in the drawings are not necessarily accurately described and may be changed as appropriate.

In addition, in the following description, similar components are shown with the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

In addition, in the description below, even if ordinal numbers such as "first" or "second" are used, these terms are used to make it easier to understand the content of the embodiments. These ordinal numbers are used for convenience and are not limited to the order that can occur based on these ordinal numbers.

When expressions indicating relative or absolute positional relationships are used (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "centered," "concentric," "coaxial," etc.), the expressions , unless otherwise specified, not only strictly represents the positional relationship, but also represents a state in which they are relatively displaced in terms of angle or distance within a range where tolerance or the same level of function can be obtained. When expressions indicating equal conditions are used (e.g., "same," "equal," "homogeneous," etc.), unless otherwise specified, the expressions do not only express quantitatively strictly equal conditions, but also include tolerances or It also represents a state in which there is a difference in which the same level of functionality can be obtained. When an expression indicating a shape (for example, "square shape" or "cylindrical shape") is used, unless otherwise specified, the expression does not only represent the shape strictly geometrically, but also has the same effect. Shapes with unevenness, chamfering, etc., for example, are also expressed as long as the shape can be obtained. When the expressions "comprising," "comprising," "comprising," "containing," or "having" one component are used, the expressions are not exclusive expressions that exclude the presence of other components. When the expression "at least one of A, B, and C" is used, the expression includes only A, only B, only C, any two of A, B, and C, and A, B and C.

<Overview of substrate processing apparatus 100>
FIG. 1 is a plan view schematically showing an example of the configuration of the substrate processing apparatus 100, and FIG. 2 is a longitudinal sectional view schematically showing an example of the configuration of the substrate processing apparatus 100. The substrate processing apparatus 100 is a single-wafer processing apparatus that processes substrates W one by one. The substrate W is, for example, a semiconductor substrate, and here has a disk shape. Although the diameter of the substrate W is not particularly limited, it is, for example, about 200 mm to 300 mm.

FIG. 3 is a diagram schematically showing an example of the configuration of the substrate W. In the example of FIG. 3, a cross-sectional view and a plan view of the substrate W are shown. For example, various circuit patterns are formed on one main surface of the substrate W. Hereinafter, one main surface of the substrate W will also be referred to as a device surface Wa. The device surface Wa has a circular shape in plan view. No circuit pattern is formed in the peripheral area Wa1 of the device surface Wa. The peripheral area Wa1 is an annular area having a predetermined width from the peripheral edge of the substrate W. The predetermined width is, for example, approximately several mm to several tens of mm. A circuit pattern is formed in a circular central region Wa2 inside the peripheral region Wa1 of the device surface Wa.

Here, it is assumed that no circuit pattern is formed on the other main surface of the substrate W. Hereinafter, the other main surface will also be referred to as the non-device surface Wb. Further, a portion including the peripheral region of the non-device surface Wb, the end surface of the substrate W, and the peripheral region Wa1 of the device surface Wa is also referred to as the substrate peripheral region VW1 of the substrate W.

Foreign matter may remain on the surface of the substrate peripheral portion VW1 of such a substrate W. The foreign matter is, for example, residues or remaining films of various substances generated during various treatments for forming a circuit pattern on the device surface Wa. As a more specific example, the residue or the residual film includes at least one of a resist including a hardened layer, amorphous carbon, and an alloy (for example, an alloy of nickel and platinum). Such foreign substances can be removed with a mixture of sulfuric acid and hydrogen peroxide (SPM).

The substrate processing apparatus 100 according to the present embodiment can remove foreign matter attached to the substrate peripheral portion VW1. Below, the configuration and operation of the substrate processing apparatus 100 will first be outlined, and then detailed.

In the example of FIGS. 1 and 2, the substrate processing apparatus 100 includes an indexer section 110, an apparatus main body 120, and a control section 90.

<Indexer section 110>
The indexer section 110 is provided between the device main body 120 and the outside. The indexer section 110 is an interface section for loading and unloading the substrate W between the apparatus main body 120 and the outside. Here, a substrate container (hereinafter referred to as a carrier) C containing a plurality of substrates W is carried into the indexer section 110 from the outside.

The indexer unit 110 includes a plurality of load ports 111 and an indexer robot 112. Each load port 111 holds a carrier C brought in from the outside. The indexer robot 112 is a transport unit that transports the substrate W between the carrier C and the apparatus main body 120. The indexer robot 112 sequentially takes out unprocessed substrates W from the carrier C, transports the substrates W to the apparatus main body 120, and sequentially receives processed substrates W processed by the apparatus main body 120 from the apparatus main body 120, The substrate W is stored in a carrier C. The carrier C containing the processed substrates W is carried out from the load port 111.

<Device body 120>
The apparatus main body 120 is a part that processes the substrate W, and includes a plurality of dry processing units 10, a plurality of wet processing units 20, and a transport unit 30.

<Transport unit 30>
The transport unit 30 transports the substrate W between the indexer robot 112, the dry processing unit 10, and the wet processing unit 20. In the example of FIG. 1, the transport unit 30 includes a shuttle transport unit 31 and a center robot 32. The shuttle transport unit 31 transports the substrate W in the horizontal direction between a first delivery position and a second delivery position. The shuttle transport unit 31 transfers the substrate W to the indexer robot 112 at the first transfer position, and transfers the substrate W to the center robot 32 at the second transfer position. The center robot 32 is a transport unit that transports the substrate W between the shuttle transport unit 31, the dry processing unit 10, and the wet processing unit 20.

<Overview of dry processing unit 10>
The dry processing unit 10 performs dry processing on the substrate W. As shown in FIG. 1, each dry processing unit 10 includes a heat processing unit 10A, a cooling unit 10B, and an indoor transport unit 10C. The heat treatment unit 10A heats the substrate W. The cooling unit 10B cools the substrate W. The indoor transport unit 10C transports the substrate W between the heat treatment unit 10A and the cooling unit 10B.

<Overview of wet processing unit 20>
The wet processing unit 20 supplies various processing liquids to the substrate W, and performs wet processing on the substrate W according to each processing liquid. The plurality of wet processing units 20 include a coating unit 20A, a bevel unit 20B, and a cleaning unit 20C.

The coating unit 20A performs a coating process to form a coating film F2 on the entire device surface Wa of the substrate W (see also FIG. 6(a)). Specifically, the coating unit 20A applies a coating liquid to the entire device surface Wa of the substrate W, and dries the coating liquid to some extent to form the coating film F2.

In the example of FIG. 6(a), the coating unit 20A includes a substrate holding section 21A and a coating nozzle 22A. The substrate holder 21A holds the substrate W in a horizontal position with the device surface Wa facing vertically upward, and rotates the substrate W around the rotation axis Q1. The horizontal position here is a position in which the thickness direction of the substrate W is along the vertical direction. The rotation axis Q1 is an axis passing through the center of the substrate W and extending in the vertical direction. Note that the substrate holding section 21A may also be called a spin chuck.

The coating nozzle 22A is provided vertically above the substrate W held by the substrate holding section 21A. The coating nozzle 22A discharges a predetermined amount of a coating liquid containing the material of the coating film F2 toward the center of the device surface Wa of the substrate W. The coating liquid is, for example, SOG (Spin on Glass). Then, the substrate holder 21A rotates the substrate W around the rotation axis Q1. As a result, the coating liquid spreads over the entire device surface Wa of the substrate W. When the substrate holder 21A rotates the substrate W at high speed, the coating liquid dries to some extent, and a coating film F2 is formed on the entire device surface Wa of the substrate W.

The substrate W after the coating process is transported to the dry processing unit 10 by the center robot 32, and is subjected to heat treatment by the heat treatment unit 10A of the dry processing unit 10. Thereby, the coating film F2 on the substrate W is dried, and the protective film F1 can be formed over the entire device surface Wa. The protective film F1 is, for example, an SOG film (described later). The heat treatment unit 10A may also be called a bake unit. The substrate W is transported to the cooling unit 10B by the indoor transport unit 10C, and is cooled by the cooling unit 10B. Thereby, the temperature of the substrate W can be lowered quickly.

The bevel unit 20B performs a protective bevel process on the substrate W to remove the peripheral edge of the protective film F1 (hereinafter referred to as protective peripheral edge VF1) (see also FIG. 6(b)). More specifically, the bevel unit 20B supplies the first processing liquid to the protective peripheral portion VF1. The first treatment liquid is a chemical liquid that can remove the protective film F1, and hereinafter also referred to as a film removal liquid. The membrane removing liquid is, for example, hydrofluoric acid. This protective bevel process allows the protective peripheral portion VF1 to be removed and the underlying peripheral region Wa1 to be exposed. That is, by the protective bevel treatment, the central region Wa2 of the device surface Wa of the substrate W is covered with the protective film F1, while the peripheral region Wa1 is exposed.

In the example of FIG. 6(b), the bevel unit 20B includes a substrate holding section 21B and a bevel nozzle 22B (corresponding to the first nozzle). The substrate holder 21B holds the substrate W in a horizontal position and rotates the substrate W around the rotation axis Q1. This substrate holding section 21B may also be called a spin chuck.

The bevel nozzle 22B is provided vertically above the substrate W held by the substrate holding section 21B. As shown in FIG. 6(b), the bevel nozzle 22B discharges the film removal liquid toward the protective peripheral portion VF1 of the rotating substrate W at a position vertically facing the peripheral portion of the substrate W. . The film removal liquid lands on the top surface of the protective film F1 at a landing position P1, flows radially outward under the centrifugal force of the substrate W, and scatters from the periphery of the substrate W. At this time, the film removing liquid acts on the protective peripheral edge VF1 whose inner peripheral edge is a circle passing through the liquid landing position P1, and removes the protective peripheral edge VF1. Therefore, the peripheral region Wa1 of the device surface Wa that is lower than the protective peripheral portion VF1 is exposed. That is, while the central region Wa2 of the device surface Wa is covered by the protective film F1, the peripheral region Wa1 of the device surface Wa is exposed.

The opening area of the discharge port 22b of this bevel nozzle 22B is small. The viscosity of the membrane removal liquid is low, and the flow rate of the membrane removal liquid is also set low in the protective bevel process. Therefore, the film removal liquid discharged from the bevel nozzle 22B can be made to land on the target liquid landing position on the protective film F1 with higher accuracy. In other words, the difference between the liquid landing position P1 and the target liquid landing position can be reduced. Therefore, the bevel unit 20B can remove the protective peripheral portion VF1 with higher positional accuracy.

The cleaning unit 20C performs a substrate bevel process on the substrate W after the protective bevel process to process the substrate peripheral edge VW1 (see also FIG. 6(c)). Specifically, the cleaning unit 20C supplies the second processing liquid to the substrate peripheral portion VW1 of the substrate W. The second treatment liquid is a chemical liquid that can hardly remove the protective film F1 and can treat the peripheral edge portion VW1 of the substrate. Here, the second treatment liquid removes the foreign matter M1 on the substrate peripheral edge VW1. Therefore, hereinafter, the second treatment liquid will also be referred to as a foreign matter removal liquid. The foreign matter removing liquid is, for example, a mixed solution of sulfuric acid and hydrogen peroxide (SPM). This substrate bevel processing can also be referred to as a cleaning process because it substantially cleans the peripheral edge portion VW1 of the substrate.

The cleaning unit 20C also performs a protective film removal process to remove the protective film F1 on the substrate W after the substrate bevel process (see also FIG. 6(d)). Specifically, the cleaning unit 20C supplies the film removal liquid to the protective film F1 of the substrate W. Thereby, the protective film F1 can be removed.

In the examples of FIGS. 6(c) and 6(d), the cleaning unit 20C includes a substrate holding section 21C and a cleaning nozzle 22C (corresponding to a second nozzle). The substrate holder 21C holds the substrate W in a horizontal position and rotates the substrate W around the rotation axis Q1. This substrate holding section 21C may also be called a spin chuck.

The cleaning nozzle 22C is provided vertically above the substrate W held by the substrate holding section 21C. The cleaning nozzle 22C has a discharge port 22c larger than the discharge port 22b of the bevel nozzle 22B, and can selectively discharge various processing liquids including a foreign matter removing liquid and a film removing liquid. For example, the cleaning nozzle 22C discharges a foreign matter removing liquid toward the protective film F1 of the rotating substrate W at a position vertically facing the center of the substrate W. The foreign matter removal liquid that has landed on the upper surface of the protective film F1 of the substrate W flows radially outward on the upper surface of the protective film F1 under the centrifugal force accompanying the rotation of the substrate W, and continues to flow outward in the radial direction on the upper surface of the protective film F1. It flows through VW1. Thereby, the foreign matter M1 on the substrate peripheral portion VW1 can be removed.

In addition, the cleaning nozzle 22C discharges a film removal liquid toward the protective film F1 of the rotating substrate W after the substrate beveling process. The film removal liquid that has landed on the upper surface of the protective film F1 of the substrate W receives centrifugal force due to the rotation of the substrate W, and flows radially outward on the upper surface of the protective film F1. Thereby, the protective film F1 can be removed.

<Control unit 90>
The control unit 90 controls the substrate processing apparatus 100 in an integrated manner. Specifically, the control unit 90 controls the indexer robot 112, the dry processing unit 10, the wet processing unit 20, and the transport unit 30.

FIG. 4 is a functional block diagram schematically showing an example of the internal configuration of the control unit 90. The control section 90 is an electronic circuit, and includes, for example, a data processing section 91 and a storage section 92. In the specific example of FIG. 3, the data processing section 91 and the storage section 92 are interconnected via a bus 93. The data processing unit 91 may be, for example, an arithmetic processing device such as a CPU (Central Processor Unit). The storage unit 92 may include a non-temporary storage unit (for example, a ROM (Read Only Memory) or a hard disk) 921 and a temporary storage unit (for example, a RAM (Random Access Memory)) 922. The non-temporary storage unit 921 may store, for example, a program that defines the processing that the control unit 90 executes. When the data processing section 91 executes this program, the control section 90 can execute the processing specified in the program. Of course, part or all of the processing executed by the control unit 90 may be executed by hardware such as a dedicated logic circuit.

<Overview of operation of substrate processing apparatus 100>
FIG. 5 is a flowchart illustrating an example of a substrate processing method executed by the substrate processing apparatus 100. FIG. 6 is a diagram schematically showing an example of the state of the substrate W in each step. An overview of the operation of the substrate processing apparatus 100 will be described below, and then an example of the specific configuration and specific operation of each processing unit will be described.

First, the substrate processing apparatus 100 performs a protective film forming process to form a protective film F1 over the entire device surface Wa of the substrate W (step S1: protective film forming step). FIG. 6(a) shows the state of the substrate W when the protective film F1 is formed. The protective film F1 is a film for protecting particularly the central region Wa2 of the device surface Wa of the substrate W from the foreign matter removal liquid. The protective film F1 is, for example, an SOG (Spin on Glass) film. The SOG film is a glassy film containing siloxane, for example, siloxane and an organic group. The SOG film may be, for example, silica glass, an alkylsiloxane polymer, an alkylsilsesquioxane polymer, a hydrogenated silsesquioxane polymer, or a hydrogenated alkylsilsesquioxane polymer.

The substrate processing apparatus 100 sequentially performs a coating process by the coating unit 20A and a heat treatment by the dry processing unit 10 on the substrate W to perform a protective film forming process. Specifically, first, the coating nozzle 22A discharges a predetermined amount of a coating liquid (for example, SOG) containing the material of the coating film F2 toward the upper surface of the device surface Wa of the substrate W, and the substrate holder 21A is rotated around the rotation axis Q1. As a result, the coating liquid spreads over the entire device surface Wa of the substrate W. Then, the substrate holder 21A rotates the substrate W at a higher speed, so that the coating liquid dries to some extent, and a coating film F2 is formed on the entire device surface Wa of the substrate W.

The center robot 32 carries out the coated substrate W from the coating unit 20A and carries it into the heat treatment unit 10A of the dry processing unit 10. The heat treatment unit 10A forms the protective film F1 by heating the substrate W and drying the coating film F2 on the device surface Wa. The heated substrate W is transported to the cooling unit 10B by the indoor transport unit 10C, and is cooled by the cooling unit 10B. The cooled substrate W is transferred to the central robot 32 via the heat treatment unit 10A. The center robot 32 transports the substrate W on which the protective film F1 is formed to the bevel unit 20B.

The bevel unit 20B performs a protective bevel process on the substrate W (step S2: protective bevel process). FIG. 6(b) shows the state of the substrate W when the protective peripheral portion VF1 is removed. The bevel nozzle 22B discharges the film removal liquid toward the protective peripheral edge VF1 of the rotating substrate W. The film removal liquid lands on the top surface of the protective film F1 at a landing position P1, flows radially outward on the top surface of the protective film F1, and scatters from the periphery of the substrate W. At this time, the film removing liquid acts on the protective peripheral edge portion VF1 and removes the protective peripheral edge portion VF1.

The opening area of the discharge port 22b of this bevel nozzle 22B is small. The viscosity of the membrane removal liquid is low, and the flow rate of the membrane removal liquid is also set low in the protective bevel process. Therefore, the film removal liquid discharged from the bevel nozzle 22B can be made to land on the target liquid landing position on the protective film F1 with higher accuracy.

Here, a case where the liquid landing position P1 deviates significantly from the target liquid landing position will be described. When the liquid landing position P1 shifts from the target liquid landing position to the rotation axis Q1 side (that is, radially inward), the protective film F1 is removed further inside. Therefore, the outer peripheral area of the central area Wa2 of the substrate W is exposed. Therefore, the protective film F1 cannot protect the outer peripheral area of the central area Wa2. Furthermore, when the liquid landing position P1 shifts radially outward from the target liquid landing position, the width of the protective film F1 to be removed becomes narrower, and as a result, the inner peripheral area of the peripheral area Wa1 of the device surface Wa is not exposed. Therefore, the foreign matter M1 to be removed that has adhered to the inner peripheral region of the peripheral region Wa1 of the substrate W is covered by the protective film F1.

In contrast, in the present embodiment, the film removal liquid can be applied to the liquid application position P1 with higher positional accuracy, so that the central area Wa2 of the device surface Wa can be appropriately protected by the protective film F1. , the peripheral area Wa1 can be appropriately exposed. In other words, the foreign matter M1 attached to the peripheral area Wa1 can be appropriately exposed. The required positional accuracy for the landing position P1 of the film removal liquid is, for example, about several hundred μm or less. For this reason, it is desirable to make the opening area of the discharge port 22b of the bevel nozzle 22B smaller so that the film removal liquid with low viscosity can pinpoint the target liquid landing position.

Since an SOG film is used as the protective film F1, it is preferable to use an acidic chemical solution containing fluorine (F) as the film removal liquid. For example, a chemical solution containing hydrofluoric acid (HF), and as a more specific example, hydrofluoric acid itself can be used as the membrane removal liquid. Since hydrofluoric acid has a low viscosity, it is suitable for being discharged from the bevel nozzle 22B.

When this hydrofluoric acid acts on the SOG film, the SOG film is removed by the following chemical reaction.

...Si-O-Si...+H ⁺ →...Si-OH... (1)
...Si-OH+HF→...SiF ₄ +2HF→H ₂ SiF ₆ (aq) (2)
In other words, siloxane (Si ₂ O) contained in the SOG film reacts with hydrogen (H) ions contained in hydrofluoric acid and changes to silanol (SiOH), and this silanol reacts with hydrofluoric acid (HF). , changes to liquid hexafluorosilicic acid (H ₂ SiF ₆ ). Due to such a chemical change, the SOG film is removed by hydrofluoric acid.

After removing the protective peripheral portion VF1, the bevel unit 20B performs a rinsing process to remove the film removal liquid on the substrate W from the substrate W with a rinsing liquid, and a drying process to dry the substrate W in this order. These processes will be detailed later.

Next, the center robot 32 carries out the processed substrate W from the bevel unit 20B, and carries the substrate W into the cleaning unit 20C.

The cleaning unit 20C performs substrate bevel processing on the substrate W (step S3: substrate bevel process). FIG. 6(c) shows the state of the substrate W when the foreign matter M1 on the substrate peripheral portion VW1 is removed. The substrate holding section 21C holds the substrate W in a horizontal position, the peripheral edge of the main surface of which is not covered with the protective film F1, and the inner region of the main surface is covered with the protective film F1, while holding the substrate W in a horizontal position. Rotate W. The cleaning nozzle 22C discharges a foreign matter removing liquid (SPM) toward the substrate W, and removes the residue or remaining film on the substrate peripheral portion VW1 with the foreign matter removing liquid. Specifically, the cleaning nozzle 22C discharges a foreign matter removal liquid toward the upper surface of the protective film F1 of the rotating substrate W, and the foreign matter removal liquid that has landed on the protective film F1 is removed from the protective film by the rotation of the substrate W. It flows from F1 toward the substrate peripheral edge VW1. As a result, the foreign matter M1 attached to the peripheral edge portion VW1 of the substrate is removed while maintaining the protective film F1. The foreign matter removal liquid is, for example, an acidic chemical liquid that does not contain fluorine. For example, a chemical solution that does not contain fluorine and contains sulfuric acid can be used as the foreign matter removal liquid, and more specifically, high temperature SPM (a mixed solution of sulfuric acid and hydrogen peroxide solution) can be used. The temperature of the SPM is, for example, about several hundred degrees.

When the foreign matter removal solution is an acidic chemical solution that does not contain fluorine, the chemical reaction shown in equation (1) occurs on the SOG film, but the chemical reaction shown in equation (2) does not occur, so the SOG No membrane is removed. In other words, the protective film F1 is not removed. On the other hand, the foreign matter M1 can be removed using the acidic chemical solution. Specifically, foreign matter M1 such as a residual film of resist, amorphous carbon, and an alloy (an alloy of nickel and platinum) can be removed by high-temperature SPM.

Further, here, the opening area of the discharge port 22c of the cleaning nozzle 22C is larger than the opening area of the discharge port 22b of the bevel nozzle 22B. Therefore, even a chemical liquid (SPM) containing high viscosity sulfuric acid can be easily discharged from the discharge port 22c of the cleaning nozzle 22C. In the above example, the cleaning nozzle 22C discharges the film removal liquid toward the liquid landing position (specifically, the central part) in a region radially inner than the substrate peripheral edge VW1 of the substrate W. . Therefore, the cleaning nozzle 22C can also be called a center nozzle, in contrast to the name of the bevel nozzle 22B.

After removing the foreign matter M1, the cleaning unit 20C performs a rinsing process to wash away the foreign matter removal liquid on the substrate W with a rinsing liquid. The rinsing process will be detailed later.

Next, the cleaning unit 20C performs a protective film removal process on the substrate W (step S4: protective film removal process). FIG. 6(d) shows the state of the substrate W when the protective film F1 is removed. The cleaning nozzle 22C discharges a film removing liquid (for example, hydrofluoric acid) toward the center of the rotating substrate W. The film removal liquid lands on the center of the upper surface of the protective film F1, and spreads outward in the radial direction under the centrifugal force caused by the rotation of the substrate W. As a result, the film removal liquid acts on the entire surface of the protective film F1 on the substrate W, and removes the protective film F1.

After removing the protective film F1, the cleaning unit 20C performs a rinsing process in which the film removal liquid on the substrate W is washed away with a rinsing liquid, and a drying process in which the substrate W is dried, in this order. These processes will be detailed later.

As described above, according to the present substrate processing method, in the protective bevel treatment (step S2), a low viscosity film removal liquid (for example, hydrofluoric acid) is discharged from the narrow discharge port 22b of the bevel nozzle 22B to protect the protective film F1. To remove a peripheral portion VF1 with high positional accuracy. Therefore, the substrate peripheral portion VW1 can be exposed with higher positional accuracy. Conversely, the protective film F1 can protect the central region Wa2 of the substrate W with higher positional accuracy.

Then, in the subsequent substrate bevel processing (step S3), while protecting the central region Wa2 of the substrate W with the protective film F1, a foreign matter removal liquid (SPM) is applied to the exposed substrate peripheral portion VW1 from the discharge port 22c of the cleaning nozzle 22C. is supplied (step S4). In the substrate bevel process, the protective film F1 protects the central area Wa2 with high positional accuracy, so even if the position where the foreign matter removing liquid lands varies somewhat, the foreign matter removing liquid cannot act on the central area Wa2. Even if the landing position of the foreign matter removing liquid varies to some extent, as long as the foreign matter removing liquid flows from the upper surface of the protective film F1 to the substrate peripheral edge VW1, the foreign matter M1 on the substrate peripheral edge VW1 can be appropriately removed. can.

Therefore, even if the foreign matter removing liquid has a high viscosity, the foreign matter M1 on the substrate peripheral edge VW1 can be removed with high positional accuracy. Further, since the opening area of the discharge port 22c of the cleaning nozzle 22C is larger than the opening area of the discharge port 22b of the bevel nozzle 22B, the foreign matter removal liquid with high viscosity can be discharged at a lower pressure, and the foreign matter removal liquid can be applied to the substrate W. Easy to supply.

As described above, in the present embodiment, in the substrate bevel processing (step S3), while covering the inner region of the device surface Wa of the substrate W with the protective film F1 (SOG film), It is possible to remove foreign matter M1 that is difficult to remove, such as a residual resist film containing a resist film, amorphous carbon, or a NiPt alloy, by SPM. Since this SOG film is hardly removed by SPM, the foreign matter M1 can be appropriately removed while appropriately protecting the inner region of the device surface Wa from SPM.

Furthermore, in the above example, in the protective film removal process (step S4), the protective film F1, which is the SOG film, is removed using a chemical solution containing hydrofluoric acid. Since hydrofluoric acid does not cause much damage to the substrate W, it is suitable for removing the protective film F1. In other words, the protective film F1 can be appropriately removed while suppressing damage to the substrate peripheral portion VW1.

Furthermore, in the specific example described above, the protective film F1 is formed by wet processing in the protective film forming process (step S1). Therefore, the protective film F1 can be formed using the inexpensive coating unit 20A and heat treatment unit 10A.

Furthermore, in the above example, in the protective film removal process (step S4), the protective film F1 is removed by wet processing. Therefore, the protective film F1 can be removed using the inexpensive cleaning unit 20C.

<Discharge direction of bevel nozzle 22B>
In the example shown in FIG. 6(b), the bevel nozzle 22B discharges the film removing liquid along the diagonally outward discharge direction. The discharge direction is determined, for example, by the shape of the internal flow path FP of the bevel nozzle 22B. In the example of FIG. 6(b), the internal flow path FP of the bevel nozzle 22B includes a vertical flow path FP1 and an inclined flow path FP2. The vertical flow path FP1 is a flow path on the upstream side of the inclined flow path FP2, and extends along the vertical direction. The upstream end of the inclined flow path FP2 is connected to the downstream end of the vertical flow path FP1, and is inclined so as to move away from the rotation axis Q1 as it goes vertically downward. In other words, the inclined flow path FP2 extends diagonally outward. The discharge port 22b is the downstream end of the inclined flow path FP2. Therefore, the film removing liquid that has flowed through the internal flow path FP of the bevel nozzle 22B flows out obliquely outward from the discharge port 22b.

Since the film removal liquid is discharged obliquely outward, the liquid landing position P1 on the protective film F1 in the protective bevel process (step S2) changes in diameter as the protective peripheral edge VF1 of the protective film F1 is removed. The direction is outward. That is, as the protective peripheral edge portion VF1 becomes thinner, the film removal liquid lands on the protective peripheral edge portion VF1 at a more radially outer liquid landing position P1. Therefore, the end surface FS1 of the protective film F1 is inclined radially outward from the upper surface toward the lower surface.

In this case, in the subsequent substrate bevel process (step S3), the cleaning unit 20C preferably discharges the foreign matter removal liquid from the cleaning nozzle 22C so that the foreign matter removal liquid lands on the upper surface of the protective film F1 (see FIG. 6). c). According to this, the foreign matter removing liquid flows from the upper surface of the protective film F1 to the peripheral area Wa1 of the device surface Wa of the substrate W via the end surface FS1 (sloped surface). Therefore, the foreign matter removing liquid can smoothly flow through the peripheral area Wa1 from the end surface FS1, and can also act appropriately on the boundary between the end surface FS1 and the peripheral area Wa1. Therefore, the foreign matter removing liquid can appropriately remove the foreign matter M1 even at the boundary.

<Backside bevel>
By the way, in the protective film forming process (step S1), there is a possibility that a substance having the same composition as the protective film F1 may adhere to the peripheral region of the non-device surface Wb of the substrate W. For example, when the coating liquid flows from the device surface Wa of the substrate W to the non-device surface Wb via the end surface and partially dries, a substance having the same composition as the protective film F1 adheres to the non-device surface Wb.

Therefore, as shown in FIG. 6(b), the bevel unit 20B may include a bevel nozzle 26B for the back surface. The bevel nozzle 26B is provided vertically below the substrate W held by the substrate holding section 21B, and faces the non-device surface Wb of the substrate W in the vertical direction. The bevel nozzle 26B discharges the film removal liquid toward the peripheral region of the non-device surface Wb of the substrate W.

In this case, in the protective bevel process (step S2), the film removal liquid is discharged toward the rotating substrate W from both the bevel nozzle 22B and the bevel nozzle 26B. The film removal liquid discharged from the bevel nozzle 22B lands on the upper surface of the protective film F1 of the substrate W. This film removal liquid flows radially outward under the influence of centrifugal force accompanying the rotation of the substrate W, and is scattered outward from the end surface of the substrate W. The film removing liquid from the bevel nozzle 22B can remove the protective peripheral portion VF1 of the protective film F1.

On the other hand, the processing liquid discharged from the bevel nozzle 26B lands on the non-device surface Wb of the substrate W. This film removal liquid flows radially outward on the non-device surface Wb under the influence of centrifugal force accompanying the rotation of the substrate W, and is scattered outward from the end surface of the substrate W. The film removing liquid from the bevel nozzle 26B can remove the same substance as the protective film F1 attached to the non-device surface Wb.

<Specific example of substrate processing apparatus 100>
Below, an example of a specific configuration and an example of a specific operation of each processing unit of the substrate processing apparatus 100 will be described in detail.

<Coating unit 20A>
FIG. 7 is a diagram schematically showing an example of the configuration of the coating unit 20A. The coating unit 20A includes a substrate holding section 21A, a coating nozzle 22A, and a guard 23A.

The substrate holding unit 21A holds the substrate W in a horizontal position and rotates the substrate W around the rotation axis Q1. In the example of FIG. 7, the substrate holding section 21A includes a disk-shaped stage 211A and a rotation mechanism 212A.

The stage 211A is arranged with its thickness direction aligned in the vertical direction. A substrate W is placed on the upper surface of the stage 211A. Since the diameter of the stage 211A is smaller than the diameter of the substrate W, the stage 211A faces only the central portion of the substrate W in the vertical direction. A plurality of suction ports (not shown) are formed on the upper surface of the stage 211A. A suction channel (not shown) communicating with the suction port is formed inside the stage 211A, and the upstream end of the suction channel is connected to a suction mechanism (not shown). The suction mechanism includes, for example, a pump, and suctions the gas in the suction channel. As a result, the non-device surface Wb of the substrate W is attracted to the plurality of suction ports of the stage 211A, and the substrate W is suction-held by the stage 211A.

The rotation mechanism 212A rotates the stage 211A around the rotation axis Q1. In the example of FIG. 7, the rotation mechanism 212A includes a shaft 213A and a motor 214A. The upper end of the shaft 213A is connected to the lower surface of the stage 211A and extends along the rotation axis Q1. The shaft 213A is, for example, a hollow shaft, and a part of the suction flow path is provided inside the shaft 213A. Motor 214A rotates shaft 213A around rotation axis Q1. As a result, the stage 211A connected to the shaft 213A and the substrate W held by suction by the stage 211A rotate together around the rotation axis Q1.

<Application nozzle 22A>
The coating nozzle 22A is provided vertically above the substrate W held by the substrate holding section 21A. The coating nozzle 22A is connected to the downstream end of the supply pipe 221A, and the upstream end of the supply pipe 221A is connected to the coating liquid supply source 223A. Therefore, the coating liquid from the coating liquid supply source 223A is supplied to the coating nozzle 22A through the supply pipe 221A, and is discharged from the discharge port 22a of the coating nozzle 22A. A valve 222A is provided on the supply pipe 221A. The opening and closing of the valve 222A switches between discharging and stopping the discharging of the coating liquid from the coating nozzle 22A.

In the example of FIG. 7, the coating nozzle 22A is provided movably between the coating position and the coating standby position by a nozzle moving mechanism 25A. The coating position is a position where the coating nozzle 22A discharges the coating liquid toward the substrate W, and is, for example, a position facing the center of the substrate W in the vertical direction. In the example of FIG. 7, the coating nozzle 22A is shown stopping at the coating position. The coating standby position is a position when the coating nozzle 22A does not discharge the coating liquid toward the substrate W, and is, for example, a position outside the end surface of the substrate W in the radial direction. When the coating nozzle 22A is stopped at the coating standby position, a physical collision between the coating nozzle 22A and the center robot 32 can be avoided when the substrate W is loaded or unloaded. The nozzle moving mechanism 25A has, for example, an arm turning mechanism similar to the later-described nozzle moving mechanism 222B included in the bevel unit 20B.

The guard 23A is a member that catches the coating liquid scattered from the end surface of the substrate W held by the substrate holding section 21A. The guard 23A has a shape that surrounds the substrate holding section 21A. In the example of FIG. 7, the guard 23A has a donut-like shape that opens radially inward, and the coating liquid splashed from the end surface of the substrate W flows into the inner space of the guard 23A. A liquid recovery mechanism and an exhaust mechanism (not shown) are provided at the lower part of the guard 23A. The liquid recovery mechanism recovers the coating liquid inside the guard 23A.

The guard 23A is provided so as to be movable up and down between the guard processing position and the guard standby position by a guard elevating mechanism 26A. The guard processing position is a position where the upper edge of the guard 23A is vertically above the upper surface of the substrate W held by the substrate holding part 21A. The guard 23A can receive the coating liquid scattered from the substrate W while being located at the guard processing position. The guard standby position is a position where the upper edge of the guard 23A is vertically below the stage 211A. When the guard 23A is stopped at the guard standby position, a physical collision between the guard 23A and the center robot 32 can be avoided when loading and unloading the substrate W. The guard elevating mechanism 26A includes, for example, a motor as a drive source and a ball screw mechanism as a drive mechanism that converts rotation of the motor into vertical movement. Alternatively, the guard lifting mechanism 26A may include an air cylinder.

<Heat treatment unit 10A>
Referring to FIG. 1, the heat treatment unit 10A includes a hot plate 11A, which is an example of a heating section, and three or more lift pins 12A. The hot plate 11A includes a plate-like plate made of metal or the like, and a heating element such as a heating wire built into the plate-like plate. The lift pin 12A passes through the hot plate 11A in the vertical direction and is provided so as to be movable up and down between a lift upper position and a lift lower position. The upper lift position is a position where the tip of the lift pin 12A is vertically above the upper surface of the hot plate 11A (that is, the upper surface of the plate-like plate). The lower lift position is a position where the tip of the lift pin 12A is vertically below the upper surface of the hot plate 11A. A pin elevating mechanism (not shown) that raises and lowers the lift pin 12A may include, for example, a motor and a ball screw mechanism, or may include an air cylinder.

With the plurality of lift pins 12A located at the upper lift position, the substrate W is placed from the center robot 32 onto the tips of the lift pins 12A. Here, the substrate W is placed on the tips of the plurality of lift pins 12A with the device surface Wa of the substrate W facing vertically upward. By lowering the plurality of lift pins 12A to the lower lift position, the substrate W is placed on the hot plate 11A. The hot plate 11A heats the substrate W. As a result, the coating film F2 on the device surface Wa of the substrate W is dried, and the protective film F1 is formed on the device surface Wa.

<Cooling unit 10B>
The cooling unit 10B includes a cooling plate 11B, which is an example of a cooling section, and three or more lift pins 12B. The cooling plate 11B includes a plate-like plate made of metal or the like, and a cooling source such as a Peltier element built into the plate-like plate. The lift pin 12B passes through the cooling plate 11B in the vertical direction and is provided so as to be movable up and down between the lift upper position and the lift lower position. The upper lift position is a position where the tip of the lift pin 12B is vertically above the upper surface of the cooling plate 11B. The lower lift position is a position where the tip of the lift pin 12B is vertically below the upper surface of the cooling plate 11B. The pin elevating mechanism for elevating and lowering the lift pin 12B is similar to the pin elevating and lowering mechanism for elevating and lowering the lift pin 12A.

With the plurality of lift pins 12B located at the upper lift position, the substrate W is placed from the center robot 32 on the tips of the lift pins 12B. The substrate W is placed on the cooling plate 11B by lowering the plurality of lift pins 12B to the lower lift position. The cooling plate 11B cools the substrate W. Thereby, the temperature of the substrate W can be lowered quickly.

<Protective film formation treatment>
Next, a specific example of the protective film forming process by the coating unit 20A and the dry processing unit 10 will be described. FIG. 8 is a flowchart showing a specific example of the protective film forming process. First, the central robot 32 carries the substrate W into the coating unit 20A (step S11). The substrate holding section 21A holds the loaded substrate W.

Next, the coating unit 20A supplies a coating liquid to the device surface Wa of the substrate W to form a coating film F2 (step S12). Specifically, first, the nozzle moving mechanism 25A moves the coating nozzle 22A to the coating position, and the guard raising/lowering mechanism 26A raises the guard 23A to the guard processing position. Next, the coating unit 20A (specifically, the control unit 90) opens the valve 222A to discharge a predetermined amount of the coating liquid onto the device surface Wa of the substrate W from the coating nozzle 22A. The coating liquid is, for example, SOG. Note that when supplying the coating liquid, the substrate holding section 21A may rotate the substrate W or may keep the substrate W stationary. Next, the substrate holder 21A rotates the substrate W and spreads the coating liquid over the entire device surface Wa of the substrate W.

Next, the substrate holding unit 21A continues to rotate the substrate W, and dries the coating liquid on the substrate W to form a coating film F2 (step S13). When the coating film F2 is formed, the substrate holding section 21A stops the rotation of the substrate W and releases the holding of the substrate W. Further, the nozzle moving mechanism 25 moves the coating nozzle 22A to the coating standby position, and the guard lifting mechanism 26A lowers the guard 23A to the guard standby position.

Next, the center robot 32 carries out the substrate W from the coating unit 20A and carries it into the dry processing unit 10 (step S14). Specifically, the lift pins 12A of the heat treatment unit 10A receive the substrate W from the center robot 32 while being raised to the upper lift position, and then lowered to the lower lift position. Thereby, the substrate W is placed on the hot plate 11A.

Next, the hot plate 11A heats the substrate W (step S15). As a result, the coating film F2 on the substrate W is heated to form the protective film F1. The protective film F1 is, for example, an SOG film.

Next, the indoor transport unit 10C transports the substrate W from the heat treatment unit 10A to the cooling unit 10B. Specifically, first, the lift pins 12A rise to lift the substrate W, and the indoor transport unit 10C takes out the substrate W. The indoor transport unit 10C places the substrate W on the tip of the lift pin 12B of the cooling unit 10B located at the upper position of the lift. The lift pins 12B descend to the lower lift position with the substrate W placed thereon, and place the substrate W on the cooling plate 11B.

Next, the cooling unit 10B cools the substrate W (step S16). Thereby, the temperature of the substrate W can be lowered quickly. Next, the indoor transport unit 10C transports the substrate W from the cooling unit 10B to the heat treatment unit 10A, and the center robot 32 transports the substrate W from the dry processing unit 10 (step S17). The center robot 32 carries the substrate W into the bevel unit 20B.

<Bevel unit 20B>
FIG. 9 is a diagram schematically showing an example of the configuration of the bevel unit 20B, and FIG. 10 is a plan view schematically showing an example of the configuration of the bevel unit 20B. In the example of FIGS. 9 and 10, the bevel unit 20B includes a substrate holding section 21B, a bevel nozzle 22B, and a guard 23B.

<Substrate holding part 21B>
The substrate holder 21B holds the substrate W in a horizontal position and rotates the substrate W around the rotation axis Q1. An example of a specific configuration of the substrate holding section 21B is the same as that of the substrate holding section 21A, so a repeated explanation will be avoided.

<Bevel nozzle 22B>
In the examples of FIGS. 9 and 10, a plurality of bevel nozzles 22B are provided. In the illustrated example, the plurality of bevel nozzles 22B are held together by a holding member 221B. The plurality of bevel nozzles 22B are arranged side by side in the horizontal direction, and are held by the holding member 221B while penetrating the holding member 221B in the vertical direction.

In the illustrated example, the plurality of bevel nozzles 22B are provided movably between a bevel processing position and a bevel standby position by a nozzle moving mechanism 222B. The bevel processing position is a position where the bevel nozzle 22B discharges fluid toward the substrate W, and is a position facing the substrate W in the vertical direction. The bevel standby position is a position where the bevel nozzle 22B does not discharge fluid toward the substrate W, and is, for example, a position outside the end surface of the substrate W in the radial direction. In the example of FIG. 10, the bevel nozzle 22B located at the bevel processing position is shown by a solid line, and the bevel nozzle 22B located at the bevel standby position is shown by a two-dot chain line. When the bevel nozzle 22B is stopped at the bevel standby position, a physical collision between the bevel nozzle 22B and the center robot 32 can be avoided when loading and unloading the substrate W.

In the illustrated example, the nozzle moving mechanism 222B moves the plurality of bevel nozzles 22B as one by moving the holding member 221B. In the illustrated example, the nozzle moving mechanism 222B has an arm turning mechanism, and specifically includes an arm 223B, a support column 224B, and a drive section 225B. The arm 223B has a rod-like shape extending in the horizontal direction, and its tip is connected to the holding member 221B, and its base end is connected to the support column 224B. The support column 224B has a rod-like shape extending along the vertical direction, and is provided rotatably around its own central axis. The drive unit 225B includes, for example, a motor, and rotates the support column 224B around the central axis. As a result, the arm 223B connected to the support column 224B pivots, and the plurality of bevel nozzles 22B connected to the arm 223B move together along an arcuate movement path. The support column 224B is installed so that the bevel processing position and the standby position are located on the movement path of the bevel nozzle 22B.

When the plurality of bevel nozzles 22B are stopped at the bevel processing position, the plurality of bevel nozzles 22B are arranged side by side in the circumferential direction along the periphery of the substrate W (see FIG. 10). In the example of FIG. 10, four bevel nozzles 22Ba to 22Bd are provided as the plurality of bevel nozzles 22B. The four bevel nozzles 22Ba to 22Bd are provided in this order in the rotation direction of the substrate W. That is, the bevel nozzle 22Ba is located at the most upstream side, and the bevel nozzle 22Bd is located at the most downstream side. Note that the upstream side here refers to a position within at least half a circumference. In other words, the bevel nozzle 22Ba is located upstream of at least a half turn from the bevel nozzle 22Bd, and preferably, is located upstream of the bevel nozzle 22Bd within a quarter of a turn. That is, the angle that bevel nozzle 22Ba and bevel nozzle 22Bd make with respect to rotation axis Q1 is preferably 90 degrees or less, for example.

Here, the bevel nozzle 22Ba discharges an inert gas, the bevel nozzle 22Bb discharges a film removing liquid (specifically, an acidic chemical containing fluorine), the bevel nozzle 22Bc discharges a rinsing liquid, and the bevel nozzle 22Bd discharges an alkaline chemical. It shall be discharged.

The bevel nozzle 22Bb is connected to the downstream end of the supply pipe 221Bb, and the upstream end of the supply pipe 221Bb is connected to the membrane removal liquid supply source 223Bb. The supply pipe 221Bb is provided with a valve 222Bb, and opening and closing of the valve 222Bb switches between discharging and stopping the discharge of the film removal liquid from the bevel nozzle 22Bb. The membrane removing liquid is, for example, hydrofluoric acid. The film removal liquid can remove the protective film F1.

The bevel nozzle 22Bc is connected to the downstream end of the supply pipe 221Bc, and the upstream end of the supply pipe 221Bc is connected to the rinse liquid supply source 223Bc. The supply pipe 221Bc is provided with a valve 222Bc, and opening and closing of the valve 222Bc switches between discharging and stopping the discharge of the rinse liquid from the bevel nozzle 22Bc. As the rinsing liquid, pure water, warm water, ozonated water, magnetic water, reduced water (hydrogen water), various organic solvents (for example, IPA (isopropyl alcohol)), functional water (carbon dioxide water, etc.), etc. are used. Good too. The rinsing liquid washes away chemical liquids (for example, film removing liquid and alkaline chemical liquid) on the substrate W and removes them from the substrate W.

The bevel nozzle 22Bd is connected to the downstream end of the supply pipe 221Bd, and the upstream end of the supply pipe 221Bd is connected to the alkaline chemical liquid supply source 223Bd. The supply pipe 221Bd is provided with a valve 222Bd, and opening and closing of the valve 222Bd switches between discharging and stopping the discharge of the alkaline chemical from the bevel nozzle 22Bd. Note that in this embodiment, it is assumed that no alkaline chemical solution is used.

The bevel nozzle 22Ba is connected to the downstream end of the supply pipe 221Ba, and the upstream end of the supply pipe 221Ba is connected to the gas supply source 223Ba. The supply pipe 221Ba is provided with a valve 222Ba, and opening and closing of the valve 222Ba switches between discharging and stopping the discharge of the inert gas from the bevel nozzle 22Ba. The inert gas includes, for example, at least one of a rare gas such as argon gas and nitrogen gas. The inert gas from the bevel nozzle 22Ba blows away the chemical solution (for example, film removal solution) on the peripheral edge of the substrate W radially outward, as will be described later.

<Guard 23B>
The guard 23B has a cylindrical shape surrounding the substrate holding part 21B, and receives the processing liquid scattered from the end surface of the substrate W. In the example of FIG. 9, the guard 23B includes a bottom member 231B, an inner guard 232B, and an outer guard 233B.

The inner guard 232B and the outer guard 233B have a cylindrical shape surrounding the substrate holding part 21B, and the outer guard 233B is provided radially outward than the inner guard 232B.

The upper part of the inner guard 232B (hereinafter referred to as the upper inclined part) extends diagonally upward toward the rotation axis Q1 as it goes vertically upward. The lower part of the inner guard 232B includes a cylindrical inner peripheral wall part extending vertically downward from the inner part of the lower end of the upper inclined part, and a cylindrical inner peripheral wall part extending vertically downward from the outer part of the lower end of the upper inclined part. and a cylindrical outer circumferential wall.

The upper portion of the outer guard 233B (hereinafter referred to as the upper inclined portion) extends diagonally upward toward the rotation axis Q1 as it goes vertically upward. The upper slope of the outer guard 233B is located vertically above the upper slope of the inner guard 232B, and faces the upper slope of the inner guard 232B in the vertical direction. The lower portion of the outer guard 233B extends vertically downward from the lower end of the upper slope of the outer guard 233B, and is located radially outward than the outer circumferential wall of the inner guard 232B.

The inner guard 232B and the outer guard 233B are provided so that they can be raised and lowered between a guard processing position and a guard standby position, which will be described later, by a guard lifting mechanism 234B, which will be described later. The guard raising/lowering mechanism 234B raises and lowers the inner guard 232B and the outer guard 233B so that the inner guard 232B and the outer guard 233B do not collide with each other. An example of a specific configuration of the guard elevating mechanism 234B is the same as that of the guard elevating mechanism 26A.

The guard processing position is a position where the upper edge of each of the inner guard 232B and the outer guard 233B is vertically above the upper surface of the substrate W held by the substrate holder 21B. In the example of FIG. 9, the inner guard 232B and outer guard 233B are shown in the guard processing position. The guard standby position is a position where the upper end periphery of each of the inner guard 232B and the outer guard 233B is, for example, vertically below the upper surface of the base 211B of the substrate holding section 21B. When both the inner guard 232B and the outer guard 233B are stopped at the guard standby position, physical collision between the inner guard 232B and the outer guard 233B and the center robot 32 can be avoided when loading and unloading the substrate W. .

When both the inner guard 232B and the outer guard 233B are stopped at the guard processing position, the processing liquid splashed from the periphery of the substrate W is received by the inner peripheral surface of the inner guard 232B. The processing liquid then flows down along the inner peripheral surface of the inner guard 232B. The processing liquid is received by the bottom member 231B as described below. When only the outer guard 233B is stopped at the guard processing position, the processing liquid is received by the inner peripheral surface of the outer guard 233B. The processing liquid is then discharged from the gap between the lower part of the outer peripheral wall of the inner guard 232B and the lower part of the outer guard 233B.

The bottom member 231B is provided vertically below the inner guard 232B and the outer guard 233B. The bottom member 231B is a member that receives the processing liquid flowing vertically downward on the inner peripheral surface of the inner guard 232B. The bottom member 231B includes an inner peripheral wall, an outer peripheral wall provided outside the inner peripheral wall, and an annular bottom connecting the lower end of the inner peripheral wall and the lower end of the outer peripheral wall. In the example of FIG. 9, the outer circumferential wall of the bottom member 231B is accommodated between the inner circumferential wall and the outer circumferential wall of the inner guard 232B.

A drainage groove (not shown) is formed at the annular bottom of the bottom member 231B. This drainage groove is connected to the factory drainage line. Further, an exhaust liquid mechanism is connected to this liquid drain groove for forcibly exhausting the inside of the groove to bring the space between the inner wall portion and the outer circumferential wall portion of the bottom member 231B into a negative pressure state.

<Surface protection part 24B>
By the way, the processing liquid discharged from the bevel nozzle 22B lands on the top surface of the substrate W at a liquid landing position P1 near the target liquid landing position, and receives centrifugal force due to the rotation of the substrate W, and mainly moves toward the outside in the radial direction. It flows. However, a portion of the processing liquid may swell and flow radially inward on the upper surface of the substrate W. In the protective bevel process (step S2), when a part of the film removal liquid moves on the upper surface of the protective film F1 toward the center of the substrate W, the protective film F1 on the center side is also removed, and the device surface Wa of the substrate W is removed. A part of the central region Wa2 may be exposed. In this case, the protective film F1 cannot appropriately protect the central region Wa2 of the device surface Wa.

Therefore, in the examples of FIGS. 9 and 10, a surface protection portion 24B is provided in the bevel unit 20B in order to suppress movement of the processing liquid toward the center of the substrate W. The surface protection unit 24B discharges gas toward the center of the protective film F1 of the substrate W. The gas collides with the center of the substrate W and flows omnidirectionally from the center of the substrate W toward the outside in the radial direction. As the gas flows from the center of the substrate W toward the outside in the radial direction, the gas presses the processing liquid on the substrate W toward the outside in the radial direction. Therefore, movement of the processing liquid on the substrate W in the radial direction can be suppressed. As the gas, for example, an inert gas can be used. The inert gas includes, for example, at least one of a rare gas such as argon gas and nitrogen gas.

In the example of FIG. 9, the surface protection part 24B is provided vertically above the substrate W held by the substrate holding part 21B, and includes a head 244B having a gas nozzle 241B, a cylindrical member 242B, and a blocking plate 243B, and a gas nozzle movement mechanism 27B. The cylindrical member 242B is provided with its central axis extending along the vertical direction. The blocking plate 243B is attached to the lower surface of the cylindrical member 242B. The blocking plate 243B has a disk shape, and its lower surface runs along a horizontal plane. The diameter of the blocking plate 243B is larger than the diameter of the cylindrical member 242B. The gas nozzle 241B vertically passes through the columnar member 242B and the blocking plate 243B, and the lower end of the gas nozzle 241B opens at the lower surface of the blocking plate 243B. The opening is a discharge port of the gas nozzle 241B.

The upper opening of the gas nozzle 241B is connected to the downstream end of the supply pipe 245B, and the upstream end of the supply pipe 245B is connected to the gas supply source 248B. Inert gas from the gas supply source 248B is supplied to the gas nozzle 241B through the supply pipe 245B, and is discharged from the gas nozzle 241B. The supply pipe 245B is provided with a flow rate regulator 247B and a valve 246B in this order from the gas supply source 248B side. The flow rate regulator 247B adjusts the flow rate of gas flowing through the supply pipe 245B. By opening and closing the valve 246B, discharge and stop of gas discharge from the gas nozzle 241B are switched.

The gas nozzle moving mechanism 27B moves the head 244B between the gas processing position and the gas standby position. The gas processing position is a position when the gas nozzle 241B discharges gas, and is, for example, a position where the gas nozzle 241B faces the center of the substrate W in the vertical direction. The gas standby position is a position when the gas nozzle 241B does not discharge gas, and is, for example, a position outside the end surface of the substrate W in the radial direction. When the head 244B is stopped at the gas standby position, a physical collision between the head 244B and the center robot 32 can be avoided when loading and unloading the substrate W. The gas nozzle moving mechanism 27B has, for example, an arm turning mechanism similar to the nozzle moving mechanism 222B.

<Heating section 25B>
The processing speed with the membrane removal solution may depend on the temperature. For example, for a film removal liquid that is an acidic chemical containing fluorine, it is desirable to increase the temperature of the substrate W to some extent in order to increase the processing speed. Therefore, in the example of FIG. 9, a heating section 25B is provided in the bevel unit 20B. The heating unit 25B is provided at a position facing the substrate peripheral edge VW1 of the substrate W held by the substrate holding unit 21B, and heats the substrate peripheral edge VW1. Thereby, the processing speed with the membrane removal liquid can be improved. The heating unit 25B may heat the substrate W using radiant heat, or may heat the substrate W by supplying high-temperature fluid (for example, high-temperature gas) to the substrate W. Here, the heating unit 25B heats the substrate W using both radiant heat and high temperature gas.

FIG. 11 is a plan view schematically showing an example of the configuration of the heating section 25B. In the example of FIG. 11, the heating section 25B includes a heater 251B and a gas supply section 255B that uses the inside of the heater 251B as part of a flow path.

The heater 251B has an annular plate shape. Referring also to FIG. 9, the heater 251B is mounted on the substrate holding portion 21B so as to face the portion of the lower surface of the substrate W (that is, the non-device surface Wb) that is not in contact with the upper surface of the substrate holding portion 21B in a non-contact manner. arranged in a ring around the The opposing surface (upper surface) of the heater 251B is parallel to the non-device surface Wb of the substrate W, for example. The facing surface of the heater 251B faces the non-device surface Wb of the substrate W with a distance of, for example, about 2 mm to 5 mm.

The heater 251B is, for example, a resistance type heater in which a heating element (for example, a resistance heating element such as a nichrome wire) 253B is built into a main body part 252B made of silicon carbide (SiC) or ceramics. The main body 252B has an annular plate shape, and the upper surface of the main body 252B corresponds to the upper surface (opposing surface) of the heater 251B, and the lower surface of the main body 252B corresponds to the lower surface of the heater 251B. The heating element 253B is provided within an annular and band-shaped arrangement region in plan view. When the heating element 253B generates heat, the main body portion 252B is heated and its temperature increases. The high-temperature main body portion 252B can heat the substrate peripheral portion VW1 of the substrate W by radiant heat.

In the example of FIG. 11, a heating flow path 254B is formed inside the main body portion 252B. The heating channel 254B includes a horizontal channel arranged in a horizontal plane vertically below the heating element 253B. A portion of the horizontal flow path is also arranged in regions radially inside and radially outside of the heating element 253B in plan view. The heating flow path 254B further includes an upstream flow path that extends vertically downward from the horizontal flow path and opens at the lower surface of the main body portion 252B, and a radially inner and outer side of the heating element 253B in the horizontal flow path. It has a plurality of downstream flow paths that branch and extend vertically upward from each of the main body portions 252B and open as a plurality of discharge ports 25Ba on the upper surface of the main body portion 252B.

Referring also to FIG. 9, the upstream end of heating channel 254B is connected to the downstream end of supply pipe 256B, and the upstream end of supply pipe 256B is connected to gas supply source 259B. Gas (for example, inert gas) from the gas supply source 259B is discharged from the discharge port 25Ba through the supply pipe 256B and the heating channel 254B, and flows toward the peripheral region of the non-device surface Wb of the substrate W. As the gas flows through the heating channel 254B inside the main body 252B, the gas receives heat from the main body 252B and is heated. The high temperature gas flows from the discharge port 25Ba toward the non-device surface Wb of the substrate W, and heats the substrate W. The supply pipe 256B is provided with a valve 257B and a flow rate regulator 258B. By opening and closing the valve 257B, discharge and stop of the high temperature gas from the discharge port 25Ba of the heating flow path 254B are switched. The flow rate regulator 258B adjusts the flow rate of gas.

<Back side bevel>
In the examples of FIGS. 9 and 11, the bevel unit 20B is also provided with a bevel nozzle 26B for the back surface. The bevel nozzle 26B discharges the processing liquid toward the peripheral region of the non-device surface Wb of the substrate W. The bevel nozzle 26B is provided at a position vertically below the non-device surface Wb of the substrate W held by the substrate holder 21B and facing the peripheral region of the non-device surface Wb of the substrate W in the vertical direction. Such a bevel nozzle 26B is located radially outward from the substrate holding part 21B.

In the example of FIG. 11, a recess 25Bb is formed in the heater 251B. The recessed portion 25Bb is recessed inward in the radial direction and passes through the heater 251B along the vertical direction. The bevel nozzle 26B is provided in the recess 25Bb.

In the examples of FIGS. 9 and 11, two bevel nozzles 26B are provided. One bevel nozzle 26B is connected to the downstream end of the supply pipe 261B, and the upstream end of the supply pipe 261B is connected to the membrane removal liquid supply source 263B. The film removal liquid from the film removal liquid supply source 263B is supplied to the bevel nozzle 26B through the supply pipe 261B, and is discharged from the discharge port of the bevel nozzle 26B toward the peripheral region of the non-device surface Wb of the substrate W. A valve 262B is provided in the supply pipe 261B. By opening and closing the valve 262B, discharge and stop of the film removal liquid from the bevel nozzle 26B are switched.

The other bevel nozzle 26B is connected to the downstream end of the supply pipe 265B, and the upstream end of the supply pipe 265B is connected to the rinse liquid supply source 268B. The rinsing liquid from the rinsing liquid supply source 268B is supplied to the bevel nozzle 26B through the supply pipe 265B, and is discharged from the discharge port of the bevel nozzle 26B toward the peripheral region of the non-device surface Wb of the substrate W. A valve 266B is provided in the supply pipe 265B. By opening and closing the valve 266B, discharge and stop of the rinse liquid from the bevel nozzle 26B are switched.

<Protective bevel treatment>
FIG. 12 is a flowchart showing a specific example of protection bevel processing. First, the center robot 32 carries the substrate W into the bevel unit 20B (step S21). The substrate holding section 21B holds the loaded substrate W.

Next, the substrate holder 21B rotates the substrate W around the rotation axis Q1 (step S22). Further, the nozzle moving mechanism 222B moves the bevel nozzle 22B to the bevel processing position, and the bevel unit 20B (more specifically, the control unit 90) opens the valve 257B and the valve 222Ba to discharge gas from the gas nozzle 241B and the bevel nozzle 22Ba. Step S23). Further, the heating unit 25B heats the peripheral portion of the substrate W (step S24). Specifically, bevel unit 20B starts energizing the heating element and opens valve 257B. Moreover, the guard raising/lowering mechanism 234B raises the guard corresponding to the film removal liquid out of the inner guard 232B and the outer guard 233B to the guard processing position.

Next, the bevel unit 20B opens the valve 222Bb and the valve 262B to discharge the film removal liquid from the bevel nozzle 22Bb and the bevel nozzle 26B (step S25). The film removal liquid discharged from the bevel nozzle 22Bb lands on the top surface of the protective film F1 at the landing position P1, flows radially outward on the top surface of the protective film F1, and a part of it scatters from the periphery of the substrate W (Fig. 6(b)). At this time, the film removal liquid acts on the protective peripheral edge portion VF1 of the protective film F1, allowing the protective peripheral edge portion VF1 to be removed.

The remaining part of the film removal liquid on the protective film F1 remains on the protective peripheral edge VF1 and rotates around the rotation axis Q1 as the substrate W rotates. Here, gas is discharged from a bevel nozzle 22Ba provided upstream of the bevel nozzle 22Bb. The gas blows away the membrane removal liquid remaining on the protective peripheral portion VF1 and making almost one revolution toward the outside in the radial direction. That is, the old film removal liquid that has landed on the liquid landing position P1 and has made almost one revolution around the rotation axis Q1 is blown away by the gas from the bevel nozzle 22Ba. Therefore, almost no old film removal liquid reaches the liquid landing position P1. Therefore, it is possible to prevent the new film removing liquid from colliding with the old film removing liquid at the landing position P1. Therefore, it is possible to prevent the film removal liquid from becoming excessive at the liquid landing position P1 and expanding radially inward. Note that the position where the gas from the bevel nozzle 22Ba collides with the upper surface of the substrate W is radially inner than the landing position P1 of the film removal liquid from the bevel nozzle 22Bb. Thereby, the gas flows from the inside in the radial direction to the outside in the radial direction relative to the membrane removal liquid, and the membrane removal liquid can be blown radially outward more reliably.

The film removal liquid discharged from the bevel nozzle 26B lands on the non-device surface Wb of the substrate W, flows radially outward on the non-device surface Wb, and scatters from the periphery of the substrate W (Fig. 6(b) ). At this time, the film removal liquid can remove the same substance as the protective film F1 attached to the non-device surface Wb.

Although not shown in FIGS. 9 and 11, a bevel nozzle 26B that discharges gas may be provided similarly to the bevel nozzle 22Ba. The gas bevel nozzle 26B is provided upstream of the film removal liquid bevel nozzle 26B in the rotational direction of the substrate W, and discharges gas. The gas blows away the old film removal liquid that remains on the non-device surface Wb and circulates radially outward. Therefore, it is possible to prevent the film removal liquid from becoming excessive at the liquid landing position on the non-device surface Wb. If the film removal liquid becomes excessive at the landing position on the non-device surface Wb, the film removal liquid goes around the end surface of the substrate W and reaches the upper surface of the protective film F1, and the film removal liquid on the protective film F1 is removed from the substrate. Although it could be pushed toward the center of W, such push-out can be suppressed.

Furthermore, here, since the heating unit 25B heats the substrate peripheral portion VW1 of the substrate W, the temperature of the protective peripheral portion VF1 of the upper layer can also be increased. Therefore, it is possible to suppress a decrease in the temperature of the film removal liquid on the protective peripheral portion VF1, and the film removal liquid can remove the protective peripheral portion VF1 at a higher processing speed. Therefore, the protective peripheral portion VF1 can be removed at a high processing speed. Note that the position where the rinsing liquid from the bevel nozzle 22Bc lands is radially inner than the position P1 where the film removal liquid from the bevel nozzle 22Bb lands. Thereby, the rinsing liquid can appropriately wash away the membrane removal liquid. The same applies to the bevel nozzle 26B.

When the protective peripheral portion VF1 is sufficiently removed, the bevel unit 20B closes the valve 222Bb and the valve 262B to stop supplying the membrane removal liquid. More specifically, when the elapsed time from the supply of the membrane removal liquid reaches a first predetermined time or more, the bevel unit 20B closes the valve 222Bb and the valve 262B. The elapsed time is measured by a known timer circuit within the control section 90.

Next, the guard elevating mechanism 234B changes the elevating state of the guard 23B as necessary. That is, when the guard for the rinsing liquid is different from the guard for the membrane removal liquid, the guard raising/lowering mechanism 234B raises the guard corresponding to the rinsing liquid to the guard processing position.

Next, the bevel unit 20B opens the valve 222Bc and the valve 266B to discharge the rinsing liquid from the bevel nozzle 22Bc and the bevel nozzle 26B (step S26). The rinsing liquid that has landed on the surface of the substrate W flows outward in the radial direction under the centrifugal force caused by the rotation of the substrate W, and is scattered outward from the end surface of the substrate W. Thereby, the film removal liquid on the surface of the substrate W can be washed away radially outward with the rinsing liquid. In other words, the film removing liquid on the surface of the substrate W can be replaced with the rinsing liquid.

When the membrane removal liquid is sufficiently replaced with the rinsing liquid, the bevel unit 20B closes the valve 222Bc and the valve 266B to stop supplying the rinsing liquid. More specifically, when the elapsed time from the supply of the rinse liquid reaches a second predetermined time or more, the bevel unit 20B closes the valve 222Bc and the valve 266B.

Next, the substrate W is dried (step S27). As a specific example, the substrate holder 21B increases the rotational speed of the substrate W to rotate the substrate W at high speed (so-called spin drying).

Next, the bevel unit 20B closes the valve 222Ba and the valve 257B, the nozzle moving mechanism 222B moves the plurality of bevel nozzles 22B to the bevel standby position, the heating section 25B stops the heating operation, and the substrate holding section 21B The rotation is stopped and the holding of the substrate W is released. Next, the center robot 32 carries out the substrate W from the bevel unit 20B (step S28). The center robot 32 carries the substrate W into the cleaning unit 20C.

<Cleaning unit 20C>
FIG. 13 is a diagram schematically showing an example of the configuration of the cleaning unit 20C. The cleaning unit 20C includes a substrate holding section 21C, a cleaning nozzle 22C, and a guard 23C.

The substrate holder 21C holds the substrate W in a horizontal position and rotates the substrate W around the rotation axis Q1. In the example of FIG. 13, the substrate holder 21C includes a spin base 211C, a plurality of (three or more) chuck pins 212C, and a rotation mechanism 213C. The spin base 211C has a disk shape and is provided in a horizontal position with its thickness direction along the vertical direction. The outer diameter of the disk-shaped spin base 211C is slightly larger than the diameter of the circular substrate W held by the substrate holder 21 (see FIG. 13). Therefore, the spin base 211C has an upper surface that faces the entire lower surface (ie, non-device surface Wb) of the substrate W to be held in the vertical direction.

In the example of FIG. 13, a plurality of chuck pins 212C are erected on the peripheral edge of the upper surface of the spin base 211C. The plurality of chuck pins 212C are arranged at equal intervals along a circumference corresponding to the periphery of the circular substrate W. Each chuck pin 212C is provided so as to be movable between a holding position where it contacts the periphery of the substrate W and an open position where it is away from the periphery of the substrate W. The plurality of chuck pins 212C are driven in conjunction with each other by a link mechanism (not shown) housed in the spin base 211C. By stopping the plurality of chuck pins 212C at their respective holding positions, the substrate holding part 21C can hold the substrate W in a horizontal position above the spin base 211C and close to the upper surface, and the plurality of chuck pins By stopping 212C at each open position, the holding of the substrate W can be released.

The rotation mechanism 213C rotates the spin base 211C around the rotation axis Q1. As a result, the substrate W held by the plurality of chuck pins 212C also rotates around the rotation axis Q1. An example of the configuration of the rotation mechanism 213C is the same as that of the rotation mechanism 212A.

Note that the substrate holder 21C does not necessarily need to include the chuck pin 212C, and may hold the substrate W by suction, for example, like the

substrate holders

21A and 21B.

The cleaning nozzle 22C discharges the processing liquid toward the substrate W to supply the processing liquid to the substrate W. The cleaning nozzle 22C is connected to the downstream end of the supply pipe 221C, and the upstream end of the supply pipe 221C is connected to the processing liquid supply source 223C. The processing liquid from the processing liquid supply source 223C is supplied to the cleaning nozzle 22C through the supply pipe 221C, and is discharged from the discharge port 22c of the cleaning nozzle 22C. A valve 222C is provided on the supply pipe 221C. Opening and closing of the valve 222C switches between discharging and stopping the discharging of the processing liquid from the cleaning nozzle 22C.

The cleaning unit 20C is configured to be supplied with multiple types of processing liquids. More specifically, the cleaning unit 20C can selectively supply the foreign matter removal liquid and the membrane removal liquid. For example, two cleaning nozzles 22C may be provided that discharge the foreign matter removing liquid and the film removing liquid, respectively.

In the example of FIG. 13, the cleaning nozzle 22C is provided movably between the cleaning processing position and the cleaning standby position by a nozzle moving mechanism 25C. The cleaning processing position is a position where the cleaning nozzle 22C discharges a processing liquid toward the substrate W, and is, for example, a position facing the center of the substrate W in the vertical direction. The cleaning standby position is a position when the cleaning nozzle 22C does not discharge the processing liquid toward the substrate W, and is, for example, a position outside the end surface of the substrate W in the radial direction. When the cleaning nozzle 22C is stopped at the processing standby position, a physical collision between the cleaning nozzle 22C and the central robot 32 can be avoided when loading and unloading the substrate W. The nozzle moving mechanism 25C has, for example, an arm turning mechanism similar to the nozzle moving mechanism 222B.

In the example of FIG. 13, the cleaning unit 20C is also provided with a fixed nozzle 24C. The fixed nozzle 24C is provided vertically above the substrate W held by the substrate holder 21C and radially outward from the end surface of the substrate W. The fixed nozzle 24C is connected to the downstream end of the supply pipe 241C, and the upstream end of the supply pipe 241C is connected to the rinse liquid supply source 243C. The rinsing liquid from the rinsing liquid supply source 243C is supplied to the fixed nozzle 24C through the supply pipe 241C, and is discharged from the discharge port of the fixed nozzle 24C toward the upper surface of the substrate W (that is, the device surface Wa). A valve 242C is provided on the supply pipe 241C. By opening and closing the valve 242C, discharge and stop of the rinse liquid from the fixed nozzle 24C are switched.

The guard 23C is a member for catching the processing liquid splashed from the end surface of the substrate W. The guard 23C has a cylindrical shape surrounding the substrate holding part 21C, and includes, for example, a plurality of guards that can be raised and lowered independently of each other. In the example of FIG. 13, an inner guard 231C, a middle guard 232C, and an outer guard 233C are shown as the plurality of guards 23C. Each of the guards 231C to 233C surrounds the substrate holder 21C and has a shape that is approximately rotationally symmetrical with respect to the rotation axis Q1.

The function of the guard 23C is the same as that of the guard 23B, and the inner guard 231C, middle guard 232C, and outer guard 233C are members for receiving different types of processing liquids. Although the specific shape of the guard 23C illustrated in FIG. 13 is different from the guard 23B, the shape itself of the guard 23C is not the essence of this embodiment, so a detailed explanation will be omitted here.

The guards 231C to 233C can be raised and lowered by a guard raising and lowering mechanism 26C. The guard raising/lowering mechanism 26C raises and lowers the guards 231C to 233C between their respective guard processing positions and guard standby positions so that the guards 231C to 233C do not collide with each other. In the example of FIG. 13, the guards 231C to 233C located at the guard standby position are shown by solid lines, and some of the guards 231C to 233C located at the guard processing position are shown by two-dot chain lines. An example of the configuration of the guard lifting mechanism 26C is the same as that of the guard lifting mechanism 234B.

<Substrate bevel treatment and protective film removal treatment>
FIG. 14 is a flowchart showing a specific example of the substrate bevel process (step S3) and the protective film removal process (step S4). First, the central robot 32 carries the substrate W into the cleaning unit 20C (step S31). The substrate holding section 21C holds the loaded substrate W.

Next, the substrate holder 21C rotates the substrate W (step S32). Further, the guard lifting/lowering mechanism 26C raises the guard corresponding to the foreign matter removing liquid among the guards 231C to 233C to the guard processing position.

Next, the cleaning unit 20C supplies a foreign matter removing liquid to the substrate peripheral portion VW1 of the substrate W (step S33). Specifically, the nozzle moving mechanism 25C moves the cleaning nozzle 22C to the cleaning processing position, and the cleaning unit 20C (more specifically, the control unit 90) opens the valve 222C corresponding to the foreign matter removal liquid, and the cleaning nozzle 22C moves to the cleaning processing position. The foreign matter removing liquid is discharged from the discharge port 22c of 22C. The foreign matter removing liquid is, for example, high temperature SPM. The foreign matter removal liquid lands on the upper surface of the protective film F1, flows radially outward on the upper surface of the protective film F1 under the influence of centrifugal force caused by the rotation of the substrate W, and then flows through the peripheral area Wa1 of the substrate W (Fig. 6(c)). Thereby, the foreign matter removing liquid acts on the foreign matter M1 in the peripheral area Wa1 of the substrate W, and can remove the foreign matter M1. Note that the foreign matter removing liquid can go around the end surface of the substrate W and reach the peripheral region of the non-device surface Wb of the substrate W. In this case, the foreign matter removing liquid can also remove the foreign matter M1 on the end surface of the substrate W and the peripheral region of the non-device surface Wb.

When the foreign matter M1 is sufficiently removed, the cleaning unit 20C closes the valve 222C corresponding to the foreign matter removal liquid. More specifically, when the elapsed time from the supply of the foreign matter removing liquid reaches a third predetermined time or more, the cleaning unit 20C closes the valve 222C corresponding to the foreign matter removing liquid.

Next, the guard elevating mechanism 26C changes the elevating state of the guard 23C as necessary. That is, if the guard for the rinse liquid is different from the guard for the foreign matter removal liquid, the guard lifting mechanism 26C raises the guard corresponding to the rinse liquid to the guard processing position.

Next, the cleaning unit 20C supplies a rinsing liquid to the substrate W (step S34). As a specific example, the cleaning unit 20C opens the valve 242C and discharges the rinse liquid from the discharge port of the fixed nozzle 24C. The rinsing liquid lands on the center of the upper surface of the protective film F1 and flows radially outward on the upper surface of the protective film F1. The rinsing liquid continues to flow through the peripheral area Wa1 of the substrate W and scatters from the end surface of the substrate W. As a result, the foreign matter removing liquid on the substrate W is washed away by the rinsing liquid. That is, the foreign matter removing liquid on the substrate W is replaced with the rinsing liquid.

When the foreign matter removal liquid is sufficiently replaced with the rinsing liquid, the cleaning unit 20C closes the valve 242C. More specifically, the cleaning unit 20C closes the valve 242C when the elapsed time from the supply of the rinse liquid reaches a fourth predetermined time or more.

Next, the guard elevating mechanism 26C changes the elevating state of the guard 23C as necessary. That is, when the guard for the membrane removal liquid is different from the guard for the rinsing liquid, the guard lifting/lowering mechanism 26C raises the guard corresponding to the membrane removal liquid to the guard processing position.

Next, the cleaning unit 20C supplies the film removal liquid to the substrate W (step S41). Specifically, the cleaning unit 20C opens the valve 222C corresponding to the membrane removal liquid and causes the membrane removal liquid to be discharged from the discharge port 22c of the cleaning nozzle 22C. The membrane removing liquid is, for example, hydrofluoric acid. The film removal liquid lands on the center of the upper surface of the protective film F1, flows radially outward on the upper surface of the protective film F1, continues to flow through the peripheral area Wa1 of the substrate W, and scatters outward from the end surface of the substrate W. (See also Figure 6(d)). At this time, the film removing liquid acts on the protective film F1 on the substrate W to remove the protective film F1.

When the protective film F1 is sufficiently removed, the cleaning unit 20C closes the valve 222C corresponding to the film removal liquid. More specifically, when the elapsed time from the supply of the membrane removal liquid reaches a fifth predetermined time or more, the cleaning unit 20C closes the valve 222C corresponding to the membrane removal liquid.

Next, the guard elevating mechanism 26C changes the elevating state of the guard 23C as necessary. That is, when the guard for the rinsing liquid is different from the guard for the membrane removal liquid, the guard lifting mechanism 26C raises the guard corresponding to the rinsing liquid to the guard processing position.

Next, the cleaning unit 20C supplies a rinsing liquid to the substrate W (step S42). As a specific example, the cleaning unit 20C opens the valve 242C and discharges the rinse liquid from the discharge port of the fixed nozzle 24C. The rinsing liquid lands on the center of the device surface Wa of the substrate W, flows radially outward on the device surface Wa, and scatters outward from the end surface of the substrate W. As a result, the film removal liquid on the substrate W is washed away by the rinsing liquid. That is, the film removal liquid on the substrate W is replaced with the rinsing liquid.

When the membrane removal liquid is sufficiently replaced with the rinsing liquid, the cleaning unit 20C closes the valve 242C. More specifically, the cleaning unit 20C closes the valve 242C when the elapsed time from the supply of the rinse liquid reaches a sixth predetermined time or more. Further, the nozzle moving mechanism 25C moves the cleaning nozzle 22C to the cleaning standby position.

Next, the cleaning unit 20C dries the substrate W (step S43). As a specific example, the substrate holder 21C increases the rotational speed of the substrate W to rotate the substrate W at high speed (so-called spin drying). When the substrate W is sufficiently dried, the substrate holder 21C stops the rotation of the substrate W.

Next, the substrate holding section 21C releases the holding of the substrate W, and the center robot 32 carries out the substrate W from the cleaning unit 20C (step S44).

Through the above operations, the substrate processing apparatus 100 can process the substrate peripheral portion VW1 of the substrate W.

<Modified example>
In the above example, in the substrate bevel process (step S3), the cleaning nozzle 22C discharges the foreign matter removal liquid toward the center of the substrate W, and causes the foreign matter removal liquid to land on the center of the protective film F1 on the substrate W. I'm letting you do it. However, this is not necessarily the case. As long as the foreign matter removing liquid is supplied to the peripheral area Wa1 of the substrate W, the landing position of the foreign matter removing liquid may be changed as appropriate. For example, the cleaning nozzle 22C may discharge the foreign matter removal liquid toward a landing position between the center of the protective film F1 and the periphery of the protective film F1.

Furthermore, in the above example, in the protective film forming process, the protective film F1 is formed by wet processing, and in the protective film removing process, the protective film F1 is removed by wet processing. Therefore, an inexpensive wet processing unit 20 can be used. However, for example, if cost reduction is not required, at least one of the formation and removal of the protective film F1 may be performed by dry processing.

Further, in the above example, the coating unit 20A, the heat treatment unit 10A, the bevel unit 20B, and the cleaning unit 20C are provided in the substrate processing apparatus 100, but these may be provided separately in different processing apparatuses. For example, the coating unit 20A and the heat treatment unit 10A may be provided in a coater/developer (first processing device), and the bevel unit 20B and the cleaning unit 20C may be provided in a second processing device separate from the coater/developer. In this case, each of the first processing device and the second processing device includes a load port 111, and a transport device for transporting a carrier C containing a plurality of substrates W is provided between the first processing device and the second processing device. provided.

Here, the correspondence between the terms in the Means for Solving the Problems column and the terms in the Detailed Description column will be explained. A process of forming a protective film including an SOG film on the main surface of a substrate, the peripheral edge of the main surface is not covered with the protective film, and the area inside the peripheral edge of the main surface is covered with the protective film. The first step of forming the protective film in such a manner corresponds to, for example, step S2 or a set of step S1 and step S2. The second step of removing the residue or residual film on the peripheral portion using a treatment liquid containing a mixed solution of sulfuric acid and hydrogen peroxide corresponds to step S3. The third step of removing the protective film corresponds to step S4.

As described above, the substrate processing apparatus 100 and the substrate processing method have been described in detail, but the above explanations are illustrative in all aspects, and are not limited thereto. It is understood that countless variations not illustrated can be envisioned without departing from the scope of this disclosure. The configurations described in each of the above embodiments and modifications can be appropriately combined or omitted as long as they do not contradict each other.

100 Substrate processing apparatus 21B,

21C Substrate holder

22b, 22c Discharge port 22B First nozzle (bevel nozzle)
22C 2nd nozzle (cleaning nozzle)
W board

Claims

A step of forming a protective film including an SOG film on a main surface of a substrate, wherein a peripheral portion of the main surface is not covered with the protective film, and a region inside the peripheral portion of the main surface is covered with the protective film. a first step of forming the protective film so as to be covered with a film;
After the first step, a second step of removing the residue or residual film on the peripheral portion with a treatment liquid containing a mixed solution of sulfuric acid and hydrogen peroxide;
A substrate processing method, comprising a third step of removing the protective film after the second step.
The substrate processing method according to claim 1,
The substrate processing method, wherein the remaining film or the remaining film includes at least one of a resist including a hardened layer, amorphous carbon, and a NiPt alloy.
The substrate processing method according to claim 1 or 2,
In the third step, the protective film is removed using a chemical solution containing hydrofluoric acid.
The substrate processing method according to any one of claims 1 to 3,
In the first step, a chemical solution containing hydrofluoric acid is discharged from a first nozzle toward the substrate, and a peripheral portion of the SOG film formed on the entire main surface of the substrate is removed by the chemical solution. a protective bevel step of forming a protective film on the inner region of the main surface;
In the second step, the treatment liquid is discharged toward the substrate from a second nozzle having a discharge opening larger than the discharge opening of the first nozzle, and the residue or the remaining film is removed by the treatment liquid. Substrate processing method.
5. The substrate processing method according to claim 4,
In the first step, the chemical liquid is discharged from the first nozzle provided at a position facing the main surface of the substrate in the vertical direction along a discharge direction facing diagonally outward, so that the chemical liquid is discharged from the SOG film. remove the periphery,
In the second step, the second nozzle discharges the processing liquid toward the protective film, and the processing liquid that has landed on the protective film is transferred from the protective film to the substrate by rotation of the substrate. A substrate processing method that flows toward the periphery.
The substrate processing method according to claim 4 or 5,
The first step is performed before the protective bevel step, and further includes a protective film forming step of applying a coating liquid to the main surface of the substrate and drying the coating liquid to form the protective film. Substrate processing method.
While holding a substrate in a horizontal position in which a peripheral edge of the main surface is not covered with a protective film including an SOG film and a region of the main surface inside the peripheral edge is covered with the protective film, a substrate holder that rotates the substrate;
a nozzle that discharges a processing liquid containing a mixed solution of sulfuric acid and hydrogen peroxide toward the substrate, and removes a residue or a remaining film on the peripheral edge of the main surface of the substrate with the processing liquid. , substrate processing equipment.