WO2023178783A1 - 一种斯格明子晶体管及斯格明子晶体管控制方法 - Google Patents

一种斯格明子晶体管及斯格明子晶体管控制方法 Download PDF

Info

Publication number
WO2023178783A1
WO2023178783A1 PCT/CN2022/087852 CN2022087852W WO2023178783A1 WO 2023178783 A1 WO2023178783 A1 WO 2023178783A1 CN 2022087852 W CN2022087852 W CN 2022087852W WO 2023178783 A1 WO2023178783 A1 WO 2023178783A1
Authority
WO
WIPO (PCT)
Prior art keywords
skyrmion
transistor
ferromagnetic
nanotube
skyrmions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2022/087852
Other languages
English (en)
French (fr)
Inventor
邢国忠
张昊
赵雪峰
刘龙
王迪
林淮
王紫崴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Microelectronics of CAS
Original Assignee
Institute of Microelectronics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Microelectronics of CAS filed Critical Institute of Microelectronics of CAS
Priority to US18/847,854 priority Critical patent/US20250204264A1/en
Publication of WO2023178783A1 publication Critical patent/WO2023178783A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

Definitions

  • the present disclosure relates to the field of electronic technology, and in particular, to a skyrmion transistor and a skyrmion transistor control method.
  • Skyrmions are topologically protected non-collinear spin magnetic domain textures with quasi-particle properties, which have received increasing attention in the field of spintronics.
  • Skyrmions can be used as information carriers in next-generation information processing and data storage devices due to their excellent stability, extremely compact size, and drive current 5-6 orders of magnitude lower than magnetic domain walls.
  • the core of traditional semiconductor transistors is that they can control the output current based on the input voltage and have extremely fast switching speeds.
  • a skyrmion transistor it is the skyrmion that is driven rather than the electrons. Therefore, the controlled dynamic process of skyrmion is the key to realizing the skyrmion transistor.
  • how to realize the skyrmion Akiko's high-speed movement is an urgent problem that needs to be solved.
  • the present disclosure provides a skyrmion transistor and a skyrmion transistor control method.
  • the present disclosure provides a skyrmion transistor, including a ferromagnetic nanotube; a writing magnetic tunnel junction, which is arranged around one end of the ferromagnetic nanotube; and a reading magnetic tunnel junction, which is arranged around the said ferromagnetic nanotube.
  • the other end of the ferromagnetic nanotube a ferroelectric ring, surrounding the outside of the ferromagnetic nanotube and located between the writing magnetic tunnel junction and the reading magnetic tunnel junction, the ferromagnetic nanotube
  • a ferromagnetic/ferroelectric heterojunction is formed with the ferroelectric ring; wherein, after the first current is injected into the written magnetic tunnel junction in the vertical direction, the ferromagnetic nanotube is formed under the induction of the first current Skyrmions; after the first current is turned off and the ferromagnetic nanotube is passed through a second current in the axial direction, the skyrmions are driven along the axial direction by the second current. Movement; applying a control voltage on the ferroelectric ring to control the motion state of the skyrmions by adjusting the control voltage.
  • the skyrmions are Bloch-type skyrmions or Nair-type skyrmions.
  • the material of the ferromagnetic nanotube includes one or more of the following materials: FeGe, MnGe, MnSi, MnNiGa, MnFeGe, FeCoSi and Cu2OSeO3.
  • the material of the ferromagnetic nanotube includes one or more of the following materials: Co, CoFeB, CoFe and FeNi.
  • the ferromagnetic nanotube has a hollow structure
  • the skyrmion transistor further includes: a metal tube for providing interface DMI, disposed within the hollow structure of the ferromagnetic nanotube.
  • the material of the metal tube includes one or more of the following materials: W, Ta, Pt, Pd, Ph, Ir, Pb, and Au.
  • the skyrmion transistor further includes: a buffer layer located between the ferromagnetic nanotube and the ferroelectric ring.
  • the ferroelectric ring is made of lead zirconate titanate or lead magnesium niobate titanate.
  • the present disclosure provides a method for controlling a skyrmion transistor, which is applied to the skyrmion transistor provided in the first aspect.
  • the method includes: injecting vertical direction, so that the ferromagnetic nanotubes form skyrmions under the induction of the first current; turn off the first current and pass through the ferromagnetic nanotubes of the skyrmion transistor. Enter a second current in the axial direction, so that the skyrmions move in the axial direction driven by the second current; apply a control voltage to the ferroelectric ring of the skyrmion transistor to Adjust the motion state of the skyrmions.
  • applying a control voltage to the ferroelectric ring of the skyrmion transistor to adjust the motion state of the skyrmions includes: adjusting the control voltage to cause the temperature to rise below the ferroelectric ring.
  • An energy barrier region of corresponding intensity is formed in the ferromagnetic nanotube; wherein, the skyrmions are driven by the second current to pass through the energy barrier region and reach the reading magnetic tunnel of the skyrmion transistor.
  • the skyrmion transistor is turned on; when the skyrmions are blocked by the energy barrier region driven by the second current, the skyrmion transistor is turned off.
  • the skyrmion transistor provided by the present disclosure includes ferromagnetic nanotubes, write magnetic tunnel junctions, read magnetic tunnel junctions and ferroelectric rings.
  • the writing magnetic tunnel junction and the reading magnetic tunnel junction are respectively arranged around the two ends of the ferromagnetic nanotube;
  • the ferroelectric ring is arranged around the outside of the ferromagnetic nanotube and is located at the writing magnetic tunnel junction and the reading magnetic tunnel junction.
  • ferromagnetic nanotubes and ferroelectric rings form a ferromagnetic/ferroelectric heterojunction.
  • the ferromagnetic nanotubes form skyrmions under the induction of the first current; the first current is turned off, and the ferromagnetic nanotubes pass into the third current in the axial direction.
  • the second current is applied, the skyrmions move in the axial direction driven by the second current; a control voltage is applied to the ferroelectric ring to control the motion state of the skyrmions by adjusting the control voltage.
  • the skyrmions since the skyrmions are generated and the ferromagnetic nanotubes used as skyrmion movement carriers have a borderless tubular structure, the skyrmions can move in a spiral manner along the surface of the ferromagnetic nanotubes without being affected by the skyrmions.
  • the Hall effect annihilates at the boundary, thereby greatly increasing the moving speed of skyrmions and achieving a substantial improvement in transistor signal transmission.
  • Figure 1 is a schematic diagram of a skyrmion transistor according to an embodiment of the present disclosure
  • FIG. 2 is a schematic cross-sectional view of the ferromagnetic and ferroelectric heterojunction of the skyrmion transistor when the skyrmions are Nair type skyrmions according to an embodiment of the present disclosure
  • FIG. 3 is a schematic cross-sectional view of the ferromagnetic and ferroelectric heterojunction of the skyrmion transistor when the skyrmions are Bloch type skyrmions according to an embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of the position of skyrmions in the skyrmion transistor when a first current is injected into the skyrmion transistor according to an embodiment of the present disclosure
  • FIG. 5 is a schematic diagram of the position of skyrmions in the skyrmion transistor when the first current is turned off and the second current is injected into the skyrmion transistor according to an embodiment of the present disclosure
  • FIG. 6 is a schematic diagram of the position when skyrmions cannot pass through the energy barrier when the first current is turned off, the second current is injected into the skyrmion transistor, and the control voltage is applied according to an embodiment of the present disclosure
  • FIG. 7 is a schematic diagram of the position of skyrmions when they pass through the energy barrier when the first current is turned off, the second current is injected into the skyrmion transistor, and the control voltage is applied according to an embodiment of the present disclosure
  • Figure 8 is a schematic diagram of the velocity components of skyrmions according to an embodiment of the present disclosure.
  • Figure 9 is a schematic diagram of the relationship between the anisotropic parameters of the gate region and the axial current density according to an embodiment of the present disclosure
  • Figure 10 is a skyrmion transistor control method according to an embodiment of the present disclosure.
  • a layer/element when referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present between them. element. Additionally, if one layer/element is "on” another layer/element in one orientation, then the layer/element can be "under” the other layer/element when the orientation is reversed.
  • FIG. 1 is a schematic diagram of a skyrmion transistor provided by an embodiment of the present disclosure, the transistor includes:
  • Ferromagnetic nanotube 101 Ferromagnetic nanotube 101; write magnetic tunnel junction 102, which is arranged around one end of ferromagnetic nanotube 101; read magnetic tunnel junction 103, which is arranged around the other end of ferromagnetic nanotube 101; ferroelectric ring 104, which is arranged around Outside the ferromagnetic nanotube 101 and between the write magnetic tunnel junction 102 and the read magnetic tunnel junction 103, the ferromagnetic nanotube 101 and the ferroelectric ring 104 form a ferromagnetic/ferroelectric heterojunction.
  • the ferromagnetic nanotube 101 can generate stable skyrmions and provide a channel for skyrmions to move directionally and at high speed.
  • the ferromagnetic nanotube 101 has a borderless tubular structure, and may be a hollow tubular structure or a solid tubular structure.
  • the writing magnetic tunnel junction 102 and the reading magnetic tunnel junction 103 are respectively arranged around the two ends of the ferromagnetic nanotube, as shown in FIG. 1 .
  • the write magnetic tunnel junction 102 and the read magnetic tunnel junction 103 can be a sandwich structure of a ferromagnetic layer-barrier layer-ferromagnetic layer. Taking the write magnetic tunnel junction 102 as an example, it can be formed in the following manner: in the ferromagnetic layer A barrier layer is formed on the surface of one end of the nanotube 101, and a ferromagnetic layer is formed on the barrier layer.
  • the material of the barrier layer may be a metal oxide, such as MgO.
  • the writing magnetic tunnel junction 102 can be arranged on the ferromagnetic nanotube 101 in a circumferential manner, or can be arranged on the ferromagnetic nanotube 101 in a partially circumferential manner, such as a quarter circle, eight One-quarter circle and so on surround the ferromagnetic nanotube 101 .
  • the reading magnetic tunnel junction 103 is usually arranged on the ferromagnetic nanotube 101 in a circumferential manner.
  • the surrounding manner can also be deformed according to actual needs, and is not limited here.
  • the ferroelectric ring 104 is formed in the middle of the ferromagnetic nanotube 101.
  • the material of the ferroelectric ring 104 can be lead zirconate titanate (PZT) or lead magnesium niobate titanate (PMN-PT).
  • PZT lead zirconate titanate
  • PMN-PT lead magnesium niobate titanate
  • the ferromagnetic nanotube 101 and iron Electric ring 104 forms a ferromagnetic/ferroelectric heterojunction.
  • a buffer layer 105 (as shown in FIG. 1 ) can be provided between the ferromagnetic nanotube 101 and the ferroelectric ring 104.
  • the material of the buffer layer 105 can be a metal material, such as tantalum, ruthenium, etc.
  • the ferromagnetic nanotube 101, the buffer layer 105 and the ferroelectric ring 104 form a ferromagnetic/ferroelectric heterojunction. It should be noted that whether the buffer layer is set can be set according to actual needs, such as adding or canceling the buffer layer according to the material and thickness of the ferromagnetic nanotube 101.
  • the write magnetic tunnel junction 102, the ferromagnetic/ferroelectric heterojunction, and the read magnetic tunnel junction 103 serve as the source, gate, and drain of the skyrmion transistor in sequence. .
  • the ferromagnetic nanotubes 101 that provide orbits for skyrmions can include a variety of structures to generate different types of skyrmions.
  • the structures in which Nel-type skyrmions and Bloch-type skyrmions are generated at the source are taken as examples for explanation.
  • the skyrmions are Nair type skyrmions
  • Figure 2 is a cross-sectional schematic diagram of the ferromagnetic/ferroelectric heterojunction of the skyrmion transistor.
  • the ferromagnetic nanotube 101 has a hollow structure, which is similar to a circular ring structure with holes.
  • the skyrmion transistor also includes: a metal tube 106 for providing interface DMI, which is disposed within the hollow structure of the ferromagnetic nanotube.
  • the outer diameter of the metal tube 106 can be the same as the inner diameter of the hollow structure, the metal tube can be a hollow tube or a solid tube, and the length of the metal tube 106 can be set according to actual needs.
  • the structure includes a metal layer 201 provided by a metal tube 106, a first ferromagnetic layer 202 provided by a ferromagnetic nanotube 101, and a first ferroelectric layer provided by a ferroelectric ring 104.
  • Layer 203 the ferromagnetic nanotube 101 includes one or more of the following materials: FeGe, MnGe, MnSi, MnNiGa, MnFeGe, FeCoSi and Cu 2 OSeO 3 .
  • the material of the metal tube 106 may be one or more of the following materials: W, Ta, Pt, Pd, Ph, Ir, Pb, and Au.
  • a buffer layer can be added between the ferroelectric ring 104 and the ferromagnetic nanotube 101 as needed.
  • ferromagnetic nanotubes 101 include one or more of the following materials: FeGe, MnGe, MnSi, MnNiGa, MnFeGe, FeCoSi, and Cu 2 OSeO 3 .
  • the ferromagnetic nanotube 101 can be a hollow structure without any filling inside the hollow structure; the ferromagnetic nanotube 101 can also be a solid structure, that is, there is no hole in the cross section.
  • the second ferromagnetic layer 301 itself has DMI, which induces the generation of Bloch-type skyrmions.
  • the working process of the skyrmion transistor is as follows: after the first current is injected into the magnetic tunnel junction 102 along the vertical direction, the ferromagnetic nanotube 101 forms skyrmions under the induction of the first current; the first current is turned off. current, and after the ferromagnetic nanotube 101 is passed through the second current in the axial direction, the skyrmions move in the axial direction driven by the second current; a control voltage is applied to the ferroelectric ring 104 to adjust the voltage To control the motion state of skyrmions.
  • the vertical direction is the direction perpendicular to the axis of the ferromagnetic nanotube 101
  • the axial direction is the axis direction of the ferromagnetic nanotube 101 .
  • the specific values of the first current and the second current can be set according to actual needs and are not limited here.
  • the first current is injected into the written magnetic tunnel junction 102 in the vertical direction and then polarized into a spin polarized current, inducing the ferromagnetic nanotubes 101 under the written magnetic tunnel junction 102 to form stable skyrmions.
  • the ferromagnetic nanotube 101 in the embodiment of the present disclosure can provide bulk DMI or interface DMI, which can achieve stable generation of skyrmions at the source. Since skyrmions are a topologically protected particle-like domain wall structure, their stability far exceeds that of traditional magnetic domain walls. Even if they are pinned by defects or accidentally annihilated, skyrmions can be regenerated through the above steps. Theoretically, there is no upper limit to the number of skyrmion generation times, so skyrmion transistors have strong damage resistance.
  • the first current in the vertical direction is turned off, and the second current in the axial direction is passed in.
  • the second current is polarized into a spin polarized current, and the skyrmions spin. It is planned to move toward the gate driven by current.
  • the skyrmion has an axial velocity V
  • the skyrmion also has a velocity component V ⁇ perpendicular to the direction of motion. Therefore, the skyrmion will move along a spiral trajectory along the ferromagnetic nanotube 101.
  • the ferromagnetic nanotube 101 adopts a borderless tubular design, skyrmions will not accumulate or even annihilate at the boundary during movement. Thanks to the lifting of boundary restrictions, skyrmions can move in a larger area. High-speed movement under the action of two currents. At this time, the skyrmion transistor is in a conductive state.
  • the ferroelectric ring 104 undergoes radial strain under the action of the electric field. This strain can be caused by ferromagnetic/ferroelectric
  • the heterojunction is further mediated to the ferromagnetic nanotube 101.
  • the anisotropy of the ferromagnetic nanotube 101 increases, resulting in a voltage-controlled voltage in the gate region.
  • energy barrier E gate can be expressed by the following formula:
  • K gate is the anisotropy parameter of the gate region, that is, the anisotropy parameter of the ferroelectric ring;
  • m is the magnetization intensity; is the parameter related to the unit vertical direction.
  • the skyrmions are blocked outside the energy barrier region, and at this time, the skyrmion transistor is in a closed state.
  • reading the magnetic tunnel junction 103 can determine whether the skyrmion reaches the drain according to the Tunneling Magnetoresistance Effect (TMR).
  • TMR Tunneling Magnetoresistance Effect
  • the resistance of the tunnel junction can be read. If the resistance does not change, it indicates that skyrmions have not entered the drain. If the resistance changes, it indicates that skyrmions have entered the drain.
  • the function of the skyrmion transistor can be realized by adjusting the anisotropy parameters of the gate region and the axial current density corresponding to the second current. It should be noted that, in order to increase the storage density, in the embodiment of the present disclosure, the diameter of the ferromagnetic nanotube 101 can be set to the order of tens of nanometers.
  • K gate can be controlled based on the magnetoelectric coupling between the ferroelectric ring 104 and the ferromagnetic nanotube 101 .
  • K u is the anisotropic parameter of the ferroelectric nanotube. As the ratio of K gate /K u gradually increases from 1 to 1.5, the axial current density J ⁇ continues to increase, and the state of the skyrmion Also transitions between smooth pass to full block.
  • the skyrmion transistor provided by the embodiments of the present disclosure has at least the following beneficial effects:
  • skyrmions are induced by spin polarized current, and the energy barrier in the gate area is controlled through magnetoelectric coupling. This is achieved through the relationship between different axial current densities and the intensity of the energy barrier area. Skyrmions switch between the two states of passing through the energy barrier and being blocked by the energy barrier, realizing the transistor function.
  • the skyrmion transistor provided by this solution has a simple structure, small size, lower power consumption, better stability, and high repeatability.
  • the skyrmion transistor provided by this solution uses ferroelectric materials and adjusts the anisotropy of the ferromagnetic/ferroelectric heterojunction region through strain. Compared with directly using VCMA (Voltage Control Magnetic Anisotropy), the voltage controls the magnetic anisotropy. anisotropy) to control anisotropy.
  • VCMA Voltage Control Magnetic Anisotropy
  • This solution has a more efficient control effect and does not require an additional dielectric layer between the ferroelectric ring and the ferromagnetic nanotube, so it has higher damage resistance.
  • the skyrmions provided by this solution adopt a borderless tubular structure, and there is no need to consider the influence of the Hall effect.
  • the skyrmions can move at high speeds driven by larger currents, so the information conduction speed is faster than that of planar thin film structures. transistors are faster.
  • embodiments of the present disclosure also provide a skyrmion transistor control method, which is applied to the skyrmion transistor provided above. As shown in Figure 10, the method includes the following steps:
  • Step S701 Inject a first current in the vertical direction into the written magnetic tunnel junction of the skyrmion transistor, so that the ferromagnetic nanotube forms skyrmions under the induction of the first current;
  • Step S702 Turn off the first current, and pass a second current in the axial direction to the ferromagnetic nanotube of the skyrmion transistor, so that the skyrmions are driven by the second current. Movement in said axial direction;
  • Step S703 Apply a control voltage to the ferroelectric ring of the skyrmion transistor to adjust the motion state of the skyrmion.
  • applying a control voltage to the ferroelectric ring of the skyrmion transistor to adjust the motion state of the skyrmion includes:
  • the skyrmion transistor when the skyrmions pass through the energy barrier region and reach the reading magnetic tunnel junction of the skyrmion transistor driven by the second current, the skyrmion transistor is turned on; the skyrmion transistor is turned on; When the skyrmion transistor is blocked by the energy barrier region driven by the second current, the skyrmion transistor is turned off.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

本公开内容公开了一种斯格明子晶体管及斯格明子晶体管控制方法，该晶体管包括：铁磁纳米管(101)、分别环绕设置在铁磁纳米管的两端的写入磁性隧道结(102)、读取磁性隧道结(103)和铁电环(104)；铁电环(104)，环绕设置在铁磁纳米管(101)的外侧，且位于写入磁性隧道结(102)和读取磁性隧道结(103)之间，铁磁纳米管(101)与铁电环(104)形成铁磁/铁电异质结。上述斯格明子晶体管的结构能够提高斯格明子的移动速度，实现晶体管信号传递的大幅提高。

Description

一种斯格明子晶体管及斯格明子晶体管控制方法
相关申请的交叉引用
本申请要求于2022年3月24日提交、申请号为202210296254.7且名称为“一种斯格明子晶体管及斯格明子晶体管控制方法”的中国专利申请的优先权，其全部内容通过引用合并于此。
技术领域
本公开内容涉及电子技术领域，尤其涉及一种斯格明子晶体管及斯格明子晶体管控制方法。
背景技术
斯格明子(Skyrmion)是一种受拓扑保护具有准粒子特性的非共线自旋磁畴纹理，在自旋电子学领域受到越来越广泛的关注。斯格明子以其卓越的稳定性、极其紧凑的尺寸以及比磁畴壁低5-6数量级的驱动电流等特性，可用作下一代信息处理和数据存储设备中的信息载体。
传统半导体晶体管作为一种微型可变电流开关，其核心在于能够基于输入电压控制输出电流，并且具备极快的开关速度。而在斯格明子晶体管中，受驱动的是斯格明子而非电子，因此，斯格明子的受控动力学过程是实现斯格明子晶体管的关键，为了满足信号的快速传递，如何实现斯格明子的高速运动是亟待解决的问题。
发明内容
本公开内容提供一种斯格明子晶体管及斯格明子晶体管控制方法。
第一方面，本公开提供了一种斯格明子晶体管，包括铁磁纳米管；写入磁性隧道结，环绕设置在所述铁磁纳米管的一端；读取磁性隧道结，环绕设置在所述铁磁纳米管的另一端；铁电环，环绕设置在所述铁磁纳米管的外侧，且位于所述写入磁性隧道结和所述读取磁性隧道结之间，所述 铁磁纳米管与所述铁电环形成铁磁/铁电异质结；其中，第一电流沿垂直方向注入所述写入磁性隧道结后，所述铁磁纳米管在所述第一电流的诱导下形成斯格明子；关闭所述第一电流，且所述铁磁纳米管通入轴向方向上的第二电流后，所述斯格明子在所述第二电流的驱动下沿所述轴向方向运动；在所述铁电环上施加控制电压，以通过调节所述控制电压来控制所述斯格明子的运动状态。
在一些实施方式中，所述斯格明子为布洛赫型斯格明子或奈尔型斯格明子。
在一些实施方式中，所述斯格明子为所述布洛赫型斯格明子时，所述铁磁纳米管的材料包括以下材料中的一种或多种：FeGe、MnGe、MnSi、MnNiGa、MnFeGe、FeCoSi和Cu2OSeO3。
在一些实施方式中，所述斯格明子为所述奈尔型斯格明子时，所述铁磁纳米管的材料包括以下材料中的一种或多种：Co、CoFeB、CoFe和FeNi。
在一些实施方式中，所述斯格明子为所述奈尔型斯格明子时，所述铁磁纳米管为中空结构，所述斯格明子晶体管还包括：用于提供界面DMI的金属管，设置在所述铁磁纳米管的中空结构内。
在一些实施方式中，所述金属管的材料包括以下材料中的一种或多种：W、Ta、Pt、Pd、Ph、Ir、Pb和Au。
在一些实施方式中，所述斯格明子晶体管还包括：缓冲层，位于所述铁磁纳米管和所述铁电环之间。
在一些实施方式中，所述铁电环的材料为锆钛酸铅或铌镁钛酸铅。
第二方面，本公开提供了一种斯格明子晶体管控制方法，应用于第一方面提供的斯格明子晶体管中，所述方法包括：向所述斯格明子晶体管的写入磁性隧道结注入垂直方向上的第一电流，以使所述铁磁纳米管在所述第一电流的诱导下形成斯格明子；关闭所述第一电流，并向所述斯格明子晶体管的铁磁纳米管通入轴向方向上的第二电流，以使所述斯格明子在 所述第二电流的驱动下沿所述轴向方向运动；向所述斯格明子晶体管的铁电环施加控制电压，以调整所述斯格明子的运动状态。
在一些实施方式中，所述向所述斯格明子晶体管的铁电环施加控制电压，以调整所述斯格明子的运动状态，包括：调整所述控制电压，以在所述铁电环下方的铁磁纳米管中形成对应强度的能量势垒区；其中，所述斯格明子在所述第二电流的驱动下穿越所述能量势垒区到达所述斯格明子晶体管的读取磁性隧道结时，所述斯格明子晶体管导通；所述斯格明子在所述第二电流的驱动下被所述能量势垒区阻挡时，所述斯格明子晶体管关闭。
本公开提供的斯格明子晶体管，包括铁磁纳米管，写入磁性隧道结，读取磁性隧道结以及铁电环。其中，写入磁性隧道结和读取磁性隧道结分别环绕设置在铁磁纳米管的两端；铁电环，环绕设置在铁磁纳米管的外侧，且位于写入磁性隧道结和读取磁性隧道结之间，铁磁纳米管与铁电环形成铁磁/铁电异质结。当写入磁性隧道结注入垂直方向上的第一电流时，铁磁纳米管在第一电流的诱导下形成斯格明子；关闭第一电流，且铁磁纳米管通入轴向方向上的第二电流后，斯格明子在第二电流的驱动下沿轴向方向运动；在铁电环上施加控制电压，以通过调节控制电压来控制斯格明子的运动状态。上述方案中，由于生成斯格明子以及作为斯格明子运动载体的铁磁纳米管为无边界的管状结构，斯格明子可以沿着铁磁纳米管表面以螺旋方式运动，不会受到斯格明子霍尔效应影响在边界湮灭，从而大大提高了斯格明子的移动速度，实现晶体管信号传递的大幅度提高。
附图说明
为了更清楚地说明本公开实施例中的技术方案，下面将对实施例描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为依据本公开实施例的斯格明子晶体管的示意图；
图2为依据本公开实施例的在斯格明子为奈尔型斯格明子时，斯格明子晶体管铁磁、铁电异质结处的横截面示意图；
图3为依据本公开实施例的在斯格明子为布洛赫型斯格明子时，斯格明子晶体管铁磁、铁电异质结处的横截面示意图；
图4为依据本公开实施例的向斯格明子晶体管注入第一电流时，斯格明子在斯格明子晶体管内的位置示意图；
图5为依据本公开实施例的在关闭第一电流且向斯格明子晶体管注入第二电流时，斯格明子在斯格明子晶体管内的位置示意图；
图6为依据本公开实施例的在关闭第一电流、向斯格明子晶体管注入第二电流以及施压控制电压时，斯格明子无法穿过能量势垒时的位置示意图；
图7为依据本公开实施例的在关闭第一电流、向斯格明子晶体管注入第二电流以及施压控制电压时，斯格明子穿过能量势垒时的位置示意图；
图8为依据本公开实施例的斯格明子的速度分量示意图；
图9为依据本公开实施例的栅极区域各项异性参数与轴向电流密度之间的关系示意图；
图10为依据本公开实施例的一种斯格明子晶体管控制方法。
具体实施方式
以下，将参照附图来描述本公开的实施例。但是应该理解，这些描述只是示例性的，而并非要限制本公开的范围。此外，在以下说明中，省略了对公知结构和技术的描述，以避免不必要地混淆本公开的概念。
在附图中示出了根据本公开实施例的各种结构示意图。这些图并非是按比例绘制的，其中为了清楚表达的目的，放大了某些细节，并且可能省略了某些细节。图中所示出的各种区域、层的形状以及它们之间的相对大小、位置关系仅是示例性的，实际中可能由于制造公差或技术限制而有 所偏差，并且本领域技术人员根据实际所需可以另外设计具有不同形状、大小、相对位置的区域/层。
在本公开的上下文中，当将一层/元件称作位于另一层/元件“上”时，该层/元件可以直接位于该另一层/元件上，或者它们之间可以存在居中层/元件。另外，如果在一种朝向中一层/元件位于另一层/元件“上”，那么当调转朝向时，该层/元件可以位于该另一层/元件“下”。
本公开实施例提供了一种斯格明子晶体管，如图1所示，为本公开实施例提供的一种斯格明子晶体管的示意图，该晶体管包括：
铁磁纳米管101；写入磁性隧道结102，环绕设置在铁磁纳米管101的一端；读取磁性隧道结103，环绕设置在铁磁纳米管101的另一端；铁电环104，环绕设置在铁磁纳米管101的外侧，且位于写入磁性隧道结102和读取磁性隧道结103之间，铁磁纳米管101与铁电环104形成铁磁/铁电异质结。
本公开实施例中，铁磁纳米管101能够产生稳定的斯格明子并提供斯格明子定向高速移动的通道。铁磁纳米管101为无边界的管状结构，可以为中空的管状结构，也可以为实心的管状结构。
写入磁性隧道结102和读取磁性隧道结103，分别环绕的设置在铁磁纳米管的两端，如图1所示。写入磁性隧道结102和读取磁性隧道结103可以为铁磁层-势垒层-铁磁层的三明治结构，以写入磁性隧道结102为例，具体可以通过以下方式形成：在铁磁纳米管101的一端表面上形成势垒层，再在势垒层上形成铁磁层。其中，势垒层的材料可以为金属氧化物，如MgO。对于写入磁性隧道结102来说，可以以圆周环绕的方式设置在铁磁纳米管101上，也可以以部分环绕的方式设置在铁磁纳米管101上，如以四分之一圆周、八分之一圆周等环绕在铁磁纳米管101上。读取磁性隧道结103，通常以圆周环绕的方式设置在铁磁纳米管101上，当然，也可以根据实际需要对环绕方式进行变形，这里不做限定。
铁电环104，形成在铁磁纳米管101的中间部位，铁电环104的材 料可以为锆钛酸铅(PZT)或铌镁钛酸铅(PMN-PT)，铁磁纳米管101与铁电环104形成铁磁/铁电异质结。
在一些实施例中，在晶体管工作过程中，考虑到铁电环104会在外加电场的作用下发生形变挤压铁磁纳米管101，如果应力过大，铁磁纳米管101有可能会出现损伤。因此，可以在铁磁纳米管101和铁电环104之间设置缓冲层105(如图1所示)，缓冲层105的材料可以为金属材料，例如钽、钌等。在设置有缓冲层105的斯格明子晶体管中，铁磁纳米管101、缓冲层105和铁电环104形成铁磁/铁电异质结。需要说明的是，缓冲层设置与否可以根据实际需要进行设定，如根据铁磁纳米管101的材料、厚度等选择添加或取消缓冲层。
图1所示的斯格明子晶体管的结构中，写入磁性隧道结102、铁磁/铁电异质结、读取磁性隧道结103依次作为斯格明子晶体管的源极、栅极和漏极。
需要说明的是，为斯格明子提供轨道的铁磁纳米管101，可以包括多种结构，以生成不同类型的斯格明子。本公开实施例中，分别以在源极生成奈尔型斯格明子以及布洛赫型斯格明子的结构为例，来进行说明。
一、生成奈尔型斯格明子
在斯格明子为奈尔型斯格明子时，请参考图2，图2为斯格明子晶体管铁磁/铁电异质结处的横截面示意图。在该种结构中，铁磁纳米管101为中空结构，即类似于带孔的圆环结构。斯格明子晶体管还包括：用于提供界面DMI的金属管106，设置在所述铁磁纳米管的中空结构内。其中，金属管106的外径可以与中空结构的内径相同，金属管可以为空心管或者实心管，金属管106的长度可以根据实际需要进行设定。
如图2所示，该结构由内到外依次是由金属管106提供的金属层201、由铁磁纳米管101提供的第一铁磁层202、由铁电环104提供的第一铁电层203。其中，铁磁纳米管101包括以下材料中的一种或多种：FeGe、MnGe、MnSi、MnNiGa、MnFeGe、FeCoSi和Cu 2OSeO 3。金属管106的材料可以 为以下材料中的一种或多种：W、Ta、Pt、Pd、Ph、Ir、Pb和Au。另外，铁电环104和铁磁纳米管101之间可以根据需要增加缓冲层。
这种结构中存在位于金属层201和第一铁磁层202之间的界面DMI(Dzyaloshinskii-Moriya Interaction)，并诱导产生奈尔型斯格明子。
二、生成布洛赫型斯格明子
在斯格明子为布洛赫型斯格明子时，如图3所示，为斯格明子晶体管铁磁/铁电异质结处的横截面示意图。在该种结构中，通过铁磁纳米管101提供体DMI，无需通过图2中的金属层201提供界面DMI。在一些实施方式中，铁磁纳米管101包括以下材料中的一种或多种：FeGe、MnGe、MnSi、MnNiGa、MnFeGe、FeCoSi和Cu 2OSeO 3。
如图3所示，该结构由内到外依次是由铁磁纳米管101提供的第二铁磁层301、铁电环104提供的第二铁电层302。其中，在该种结构中，铁磁纳米管101可以为中空结构，中空结构内部不进行任何填充；铁磁纳米管101也可以为实心结构，即横截面不带孔。
这种结构中，第二铁磁层301自身存在体DMI，诱导产生布洛赫型斯格明子。
本公开实施例中，斯格明子晶体管的工作过程为：第一电流沿垂直方向注入写入磁性隧道结102后，铁磁纳米管101在第一电流的诱导下形成斯格明子；关闭第一电流，且铁磁纳米管101通入轴向方向上的第二电流后，斯格明子在第二电流的驱动下沿轴向方向运动；在铁电环104上施加控制电压，以通过调节电压来控制斯格明子的运动状态。
垂直方向为垂直于铁磁纳米管101轴线的方向，轴向方向为铁磁纳米管101的轴线方向。第一电流和第二电流的具体值可以根据实际需要进行设定，这里不做限定。
如图4所示，第一电流沿垂直方向注入写入磁性隧道结102后被极化为自旋极化电流，诱导写入磁性隧道结102下层的铁磁纳米管101形成稳定的斯格明子。本公开实施例中的铁磁纳米管101能够提供体DMI或 者界面DMI，可实现斯格明子在源极的稳定生成。由于斯格明子是一种受到拓扑保护的类粒子畴壁结构，其稳定性远远超过传统的磁畴壁，即使受到缺陷钉扎或者意外湮灭，只要通过上述步骤就可以重新生成斯格明子，理论上斯格明子的生成次数没有上限，因此斯格明子晶体管具有较强的抗损坏特性。
如图5所示，在斯格明子生成之后，关闭垂直方向的第一电流，通入轴向方向的第二电流，第二电流被极化为自旋极化电流，斯格明子在自旋计划电流的驱动下向栅极移动。如图8所示，斯格明子具有一个沿轴向的速度V x，同时受斯格明子霍尔效应的影响，斯格明子的运动方向会逐渐偏移电流驱动的方向，根据Thiele方程，斯格明子还具备一个垂直于运动方向的速度分量V θ，因此，斯格明子会沿着铁磁纳米管101做螺旋轨迹的运动。
本公开实施例中，由于铁磁纳米管101采用无边界的管状设计，斯格明子在运动过程中不会在边界堆积甚至湮灭，得益于边界限制的解除，斯格明子可以在较大第二电流的作用下高速运动。此时，斯格明子晶体管处于导通状态。
如图6所示，在第一电流关闭，通入第二电流以及在栅极施加控制电压时，铁电环104在电场作用下发生沿径向的应变，该应变可通过铁磁/铁电异质结进一步介导至铁磁纳米管101，在逆磁致伸缩效应(磁弹效应)的作用下，铁磁纳米管101的各向异性升高，从而导致栅极区存在一个压控的能量势垒。能量势垒E gate可由以下公式表示：
Figure PCTCN2022087852-appb-000001
其中，K gate为栅极区域各向异性参数，即铁电环各项异性参数；m为磁化强度；
Figure PCTCN2022087852-appb-000002
为单位垂直方向相关的参数。
当第二电流对应的轴向电流密度较低时，斯格明子被阻挡在能量势垒区之外，此时，斯格明子晶体管处于关闭状态。
如图7所示，随着轴向电流密度的不断增大，斯格明子的速度增加 到一定程度，斯格明子可以突破能量势垒区到达漏极，此时，斯格明子晶体管重新切换到导通状态。
本公开实施例中，读取磁性隧道结103可以根据隧穿磁阻效应(Tunneling Magnetoresistance Effect，TMR)来判断斯格明子是否到达漏极。在具体实施过程中，可以读取隧道结的电阻，如果电阻未发生变化，则表明斯格明子未进入漏极，如果电阻发生变化，则表明斯格明子已进入漏极。
因此，可以通过调节栅极区域各向异性参数以及第二电流所对应的轴向电流密度，实现斯格明子晶体管的功能。需要说明的是，为了增大存储密度，本公开实施例中，铁磁纳米管101的直径可以设置为数十纳米量级。
如图9所示，为栅极区域各项异性参数K gate与轴向电流密度J ∥之间的关系示意图。K gate可以根据铁电环104与铁磁纳米管101之间的磁电耦合作用进行调控。如图6所示，K u为铁电纳米管各项异性参数，随着K gate/K u的比值由1逐渐增大到1.5，轴向电流密度J ∥不断增大，斯格明子的状态也在顺利通过到完全阻挡之间转变。
在一个实施例中，对本公开实施例提供的斯格明子晶体管进行仿真，其中，在K gate/K u＝1.2，J ∥＝8×10 10A/cm 2，此状态下斯格明子可以通过能量势垒。在K gate/K u＝1.2，J ∥＝7×10 10A/cm 2，此状态下斯格明子无法通过能量势垒。
综上所述，本公开实施例提供的斯格明子晶体管至少具有以下有益效果：
(1)通过自旋极化电流诱导斯格明子的生成，并通过磁电耦合作用调控栅极区域的能量势垒，通过不同的轴向电流密度和能量势垒区的强度之间的关系达到斯格明子在通过能量势垒以及被能量势垒阻挡这两种状态下的切换，实现了晶体管功能。本方案提供的斯格明子晶体管结构简单，尺寸小，具有更低的功耗、更好的稳定性、以及高可重复性。
(2)本方案提供的斯格明子晶体管采用铁电材料，通过应变调节铁磁/铁电异质结区域的各项异性，相比于直接利用VCMA(Voltage Control Magnetic Anisotropy，电压控制磁各向异性)调控各向异性，本方案调控作用更加高效，且无需在铁电环和铁磁纳米管之间设置额外的介电层，因此具有更高的耐损坏性。
(3)本方案提供的斯格明子采用了无边界的管状结构，无需考虑霍尔效应的影响，斯格明子可以在较大电流的驱动下实现高速移动，因此信息传导速度较平面薄膜结构类的晶体管更为快速。
基于同一构思，本公开实施例还提供一种斯格明子晶体管控制方法，应用于上述提供的斯格明子晶体管中，如图10所示，该方法包括以下步骤：
步骤S701：向所述斯格明子晶体管的写入磁性隧道结注入垂直方向上的第一电流，以使所述铁磁纳米管在所述第一电流的诱导下形成斯格明子；
步骤S702：关闭所述第一电流，并向所述斯格明子晶体管的铁磁纳米管通入轴向方向上的第二电流，以使所述斯格明子在所述第二电流的驱动下沿所述轴向方向运动；
步骤S703：向所述斯格明子晶体管的铁电环施加控制电压，以调整所述斯格明子的运动状态。
在一些实施例中，所述向所述斯格明子晶体管的铁电环施加控制电压，以调整所述斯格明子的运动状态，包括：
调整所述控制电压，以在所述铁电环下方的铁磁纳米管中形成对应强度的能量势垒区；
其中，所述斯格明子在所述第二电流的驱动下穿越所述能量势垒区到达所述斯格明子晶体管的读取磁性隧道结时，所述斯格明子晶体管导通；所述斯格明子在所述第二电流的驱动下被所述能量势垒区阻挡时，所述斯格明子晶体管关闭。
关于上述斯格明子晶体管控制方法，已经在本公开实施例提供的斯格明子晶体管的实施例中进行了详细描述，此处就不做详细阐述说明了。
在以上的描述中，对于器件的各个结构的构图、形成等技术细节并没有做出详细的说明。但是本领域技术人员应当理解，可以通过各种技术手段，来形成所需形状的层、区域等，例如，对器件以及各层尺寸可以根据工艺进行微缩，形状可简单替换，写入磁性隧道结、读取磁性隧道结以及铁磁/铁电异质结所在位置可进行改变。另外，为了形成同一结构，本领域技术人员还可以设计出与以上描述的方法并不完全相同的方法。另外，尽管在以上分别描述了各实施例，但是这并不意味着各个实施例中的措施不能有利地结合使用。
尽管已描述了本公开的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本公开范围的所有变更和修改。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (10)

  1. 一种斯格明子晶体管，包括：
    铁磁纳米管；
    写入磁性隧道结，环绕设置在所述铁磁纳米管的一端；
    读取磁性隧道结，环绕设置在所述铁磁纳米管的另一端；
    铁电环，环绕设置在所述铁磁纳米管的外侧，且位于所述写入磁性隧道结和所述读取磁性隧道结之间，所述铁磁纳米管与所述铁电环形成铁磁/铁电异质结；
    其中，第一电流沿垂直方向注入所述写入磁性隧道结后，所述铁磁纳米管在所述第一电流的诱导下形成斯格明子；关闭所述第一电流，且所述铁磁纳米管通入轴向方向上的第二电流后，所述斯格明子在所述第二电流的驱动下沿所述轴向方向运动；在所述铁电环上施加控制电压，以通过调节所述控制电压来控制所述斯格明子的运动状态。
  2. 如权利要求1所述的斯格明子晶体管，其中：所述斯格明子为布洛赫型斯格明子或奈尔型斯格明子。
  3. 如权利要求2所述的斯格明子晶体管，其中：所述斯格明子为所述布洛赫型斯格明子时，所述铁磁纳米管的材料包括以下材料中的一种或多种：FeGe、MnGe、MnSi、MnNiGa、MnFeGe、FeCoSi和Cu 2OSeO 3。
  4. 如权利要求2所述的斯格明子晶体管，其中：所述斯格明子为所述奈尔型斯格明子时，所述铁磁纳米管的材料包括以下材料中的一种或多种：Co、CoFeB、CoFe和FeNi。
  5. 如权利要求2所述的斯格明子晶体管，其中：
    所述斯格明子为所述奈尔型斯格明子时，所述铁磁纳米管为中空结构，所述斯格明子晶体管还包括：用于提供界面DMI的金属管，设置在所述铁磁纳米管的中空结构内。
  6. 如权利要求5所述的斯格明子晶体管，其中：所述金属管的 材料包括以下材料中的一种或多种：W、Ta、Pt、Pd、Ph、Ir、Pb和Au。
  7. 如权利要求1所述的斯格明子晶体管，还包括：
    缓冲层，位于所述铁磁纳米管和所述铁电环之间。
  8. 如权利要求1所述的斯格明子晶体管，其中：所述铁电环的材料为锆钛酸铅或铌镁钛酸铅。
  9. 一种斯格明子晶体管控制方法，应用于如权利要求1-8任一权项所述的斯格明子晶体管中，所述方法包括：
    向所述斯格明子晶体管的写入磁性隧道结注入垂直方向上的第一电流，以使所述铁磁纳米管在所述第一电流的诱导下形成斯格明子；
    关闭所述第一电流，并向所述斯格明子晶体管的铁磁纳米管通入轴向方向上的第二电流，以使所述斯格明子在所述第二电流的驱动下沿所述轴向方向运动；以及
    向所述斯格明子晶体管的铁电环施加控制电压，以调整所述斯格明子的运动状态。
  10. 如权利要求9所述的方法，其中，所述向所述斯格明子晶体管的铁电环施加控制电压，以调整所述斯格明子的运动状态，包括：
    调整所述控制电压，以在所述铁电环下方的铁磁纳米管中形成对应强度的能量势垒区；
    其中，所述斯格明子在所述第二电流的驱动下穿越所述能量势垒区到达所述斯格明子晶体管的读取磁性隧道结时，所述斯格明子晶体管导通；所述斯格明子在所述第二电流的驱动下被所述能量势垒区阻挡时，所述斯格明子晶体管关闭。
PCT/CN2022/087852 2022-03-24 2022-04-20 一种斯格明子晶体管及斯格明子晶体管控制方法 Ceased WO2023178783A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US18/847,854 US20250204264A1 (en) 2022-03-24 2022-04-20 Skyrmion transistor and method of controlling skyrmion transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202210296254.7 2022-03-24
CN202210296254.7A CN114744108B (zh) 2022-03-24 2022-03-24 一种斯格明子晶体管及斯格明子晶体管控制方法

Publications (1)

Publication Number Publication Date
WO2023178783A1 true WO2023178783A1 (zh) 2023-09-28

Family

ID=82277311

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/087852 Ceased WO2023178783A1 (zh) 2022-03-24 2022-04-20 一种斯格明子晶体管及斯格明子晶体管控制方法

Country Status (3)

Country Link
US (1) US20250204264A1 (zh)
CN (1) CN114744108B (zh)
WO (1) WO2023178783A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120504300A (zh) * 2025-07-16 2025-08-19 浙江大学 一种通过电场调控铜铟硫代磷酸盐产生极化斯格明子的方法及其应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180301266A1 (en) * 2017-04-17 2018-10-18 Cornell University Magnetic structures having dusting layer
CN110535460A (zh) * 2019-09-23 2019-12-03 四川师范大学 一种基于反铁磁斯格明子的新型逻辑门电路
CN111415001A (zh) * 2020-03-11 2020-07-14 香港中文大学（深圳） 基于斯格明子的电子神经元及人工神经网络
CN111446361A (zh) * 2020-04-05 2020-07-24 华中科技大学 一种热辅助磁性斯格明子存储器及数据写入方法
CN111951846A (zh) * 2020-08-14 2020-11-17 长江存储科技有限责任公司 赛道存储器及其读写方法、赛道存储装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10134460B2 (en) * 2015-03-31 2018-11-20 Japan Science And Technology Agency Skyrmion generation device, skyrmion generation method, and magnetic memory device
CN110211614B (zh) * 2019-06-13 2021-03-02 湖北大学 一种基于磁性斯格明子的锁存器与触发器及控制方法
CN112087221B (zh) * 2020-09-18 2022-10-18 郑州轻工业大学 一种采用磁场触发的磁电数据触发器及其实现方法
CN113363377B (zh) * 2021-05-18 2022-12-06 杭州电子科技大学 一种基于铁磁斯格明子手性转换的微波振荡器
CN113393875A (zh) * 2021-05-28 2021-09-14 华南师范大学 磁性斯格明子的写入方法、信息存储器件及读取系统

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180301266A1 (en) * 2017-04-17 2018-10-18 Cornell University Magnetic structures having dusting layer
CN110535460A (zh) * 2019-09-23 2019-12-03 四川师范大学 一种基于反铁磁斯格明子的新型逻辑门电路
CN111415001A (zh) * 2020-03-11 2020-07-14 香港中文大学（深圳） 基于斯格明子的电子神经元及人工神经网络
CN111446361A (zh) * 2020-04-05 2020-07-24 华中科技大学 一种热辅助磁性斯格明子存储器及数据写入方法
CN111951846A (zh) * 2020-08-14 2020-11-17 长江存储科技有限责任公司 赛道存储器及其读写方法、赛道存储装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120504300A (zh) * 2025-07-16 2025-08-19 浙江大学 一种通过电场调控铜铟硫代磷酸盐产生极化斯格明子的方法及其应用

Also Published As

Publication number Publication date
US20250204264A1 (en) 2025-06-19
CN114744108B (zh) 2025-09-19
CN114744108A (zh) 2022-07-12

Similar Documents

Publication Publication Date Title
US8174873B2 (en) Magnetic random access memory and initializing method for the same
US8482968B2 (en) Non-volatile magnetic tunnel junction transistor
US9135973B2 (en) Magnetoresistance effect element and magnetic memory
EP3800643A1 (en) Magnetic device with a hybrid free layer stack
Wang et al. Nonvolatile spintronics: perspectives on instant-on nonvolatile nanoelectronic systems
US9478309B2 (en) Magnetic-domain-wall-displacement memory cell and initializing method therefor
JP5488465B2 (ja) 磁気ランダムアクセスメモリ、並びに磁気ランダムアクセスメモリの初期化方法及び書き込み方法
JP5461683B2 (ja) 磁気メモリセル及び磁気ランダムアクセスメモリ
US8842466B2 (en) Magnentic resistance memory apparatus having multi levels and method of driving the same
KR20110050582A (ko) 스핀 밸브 소자와 그 구동 방법 및 이들을 이용하는 기억 장치
US7969762B2 (en) Spintronic device with control by domain wall displacement induced by a current of spin-polarized carriers
JP5472820B2 (ja) 磁気抵抗素子、ｍｒａｍ及び磁気抵抗素子の初期化方法
CN104766621B (zh) 一种基于应力控制的磁性逻辑器件
CN107946454B (zh) 一种磁随机存储器及其写入方法、读取方法和制备方法
JP4212397B2 (ja) 磁気メモリ及びその書き込み方法
CN114744108B (zh) 一种斯格明子晶体管及斯格明子晶体管控制方法
CN119403432B (zh) 自旋轨道矩磁性隧道结和多数门自旋逻辑器件及其级联
JP2011119537A (ja) メモリセル及び磁気ランダムアクセスメモリ
KR101417956B1 (ko) 스핀토크를 이용한 측면형 스핀 소자
JP5633238B2 (ja) 磁気ランダムアクセスメモリ及びその初期化方法
CN112002687A (zh) 一种连续可控斯格明子移动和钉扎的器件和方法
KR20260022185A (ko) 메모리 소자 및 메모리 소자의 동작 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22932840

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 18847854

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 22932840

Country of ref document: EP

Kind code of ref document: A1

WWP Wipo information: published in national office

Ref document number: 18847854

Country of ref document: US